Publications Mario Bendra

38 records

Publications in Scientific Journals

7.   Bendra, M., Fiorentini, S., Selberherr, S., Gös, W., Sverdlov, V. (2023).
A Multi-Level Cell for Ultra-Scaled STT-MRAM Realized by Back-Hopping.
Solid-State Electronics, 208, Article 108738. https://doi.org/10.1016/j.sse.2023.108738 (reposiTUm)

6.   Bendra, M., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V. (2023).
The Influence of Interface Effects on the Switching Behavior in Ultra-Scaled MRAM Cells.
Solid-State Electronics, 201, Article 108590. https://doi.org/10.1016/j.sse.2023.108590 (reposiTUm)

5.   Fiorentini, S., Lacerda de Orio, R., Ender, J., Selberherr, S., Bendra, M., Jorstad, N. P., Goes, W., Sverdlov, V. (2022).
Finite Element Method for MRAM Switching Simulations.
WSEAS Transactions on Systems and Controls, 17, 585–588. https://doi.org/10.37394/23203.2022.17.64 (reposiTUm)

4.   Bendra, M., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V. (2022).
Interface Effects in Ultra-Scaled MRAM Cells.
Solid-State Electronics, 194(108373), 108373. https://doi.org/10.1016/j.sse.2022.108373 (reposiTUm)

3.   Fiorentini, S., Bendra, M., Ender, J., Lacerda de Orio, R., Goes, W., Selberherr, S., Sverdlov, V. (2022).
Spin and Charge Drift-Diffusion in Ultra-Scaled MRAM Cells.
Scientific Reports, 12, Article 20958. https://doi.org/10.1038/s41598-022-25586-4 (reposiTUm)

2.   Hadámek, T., Fiorentini, S., Bendra, M., Ender, J., de Orio, R. L., Goes, W., Selberherr, S., Sverdlov, V. (2022).
Temperature Increase in STT-MRAM at Writing: A Fully Three-Dimensional Finite Element Approach.
Solid-State Electronics, 193(108269), 108269. https://doi.org/10.1016/j.sse.2022.108269 (reposiTUm)

1.   Bendra, M., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V. (2022).
The Influence of Interface Effects on the Switching Behavior in Ultra-Scaled MRAM Cells.
Solid-State Electronics, 201, Article 108590. https://doi.org/10.1016/j.sse.2023.108590 (reposiTUm)

Talks and Poster Presentations (with Proceedings-Entry)

31.   Bendra, M., Fiorentini, S., Selberherr, S., Goes, W., Sverdlov, V. (2023).
A Multi-Level Cell for Ultra-Scaled STT-MRAM Realized by Back-Hopping.
In 9th Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS) 2023 (pp. 1–2), Tarragona, Spain. (reposiTUm)

30.   Bendra, M., Fiorentini, S., Ender, J., Lacerda de Orio, R., Hadamek, T., Jorstad, N., Pruckner, B., Selberherr, S., Goes, W., Sverdlov, V. (2023).
Back-Hopping in Ultra-Scaled MRAM Cells.
In Proceedings of the International Convention MIPRO (pp. 159–162), Opatija, Croatia. https://doi.org/10.23919/MIPRO57284.2023.10159764 (reposiTUm)

29.   Sverdlov, V., Bendra, M., Pruckner, B., Fiorentini, S., Goes, W., Selberherr, S. (2023).
Comprehensive Modeling of Advanced Composite Magnetoresistive Devices.
In Proceedings of the IEEE European Solid-State Device Research Conference (ESSDERC) (pp. 93–96), Lisbon, Portugal. https://doi.org/10.1109/ESSDERC59256.2023.10268508 (reposiTUm)

28.   Sverdlov, V., Jorstad, N., Bendra, M., Hadamek, T., Goes, W. (2023).
Modeling Emerging Spintronic Devices and Spintronic THz Emitters.
In Book of abstracts of the International Symposium on Terahertz-Related Devices and Technologies (TeraTech 2023) (pp. 50–51), Aizu-Wakamatsu, Japan. (reposiTUm)

27.   Bendra, M., Lacerda de Orio, R., Goes, W., Sverdlov, V., Selberherr, S. (2023).
Modeling of Ultra-Scaled Magnetoresistive Random Access Memory.
In Proceedings of the 5th International Conferenceon Microelectronic Devices and Technologies (MicDAT '2023) (pp. 28–30), Funchal (Madeira Island), Portugal. (reposiTUm)

26.   Sverdlov, V., Bendra, M., Goes, W., Fiorentini, S., Garcia-Barrientos, A., Selberherr, S. (2023).
Multi-Level Operation in Ultra-Scaled MRAM.
In 2023 IEEE Latin American Electron Devices Conference (LAEDC) Proceedings, Puebla, Mexico. https://doi.org/10.1109/LAEDC58183.2023.10209117 (reposiTUm)

25.   Jorstad, N., Hadamek, T., Bendra, M., Ender, J., Pruckner, B., Goes, W., Sverdlov, V. (2023).
Numerical Simulations of Spintronic Magnetoresistive Memories.
In SURGE Virtual Event North America 2023: Agenda (p. 1), Santa Clara, CA, United States. (reposiTUm)

24.   Bendra, M., Fiorentini, S., Selberherr, S., Goes, W., Sverdlov, V. (2023).
Simulation of Spin-Torque and Magnetization Dynamics in STT-MRAM Multi-Level Cells.
In Digital Book of Abstracts: 13th International Symposium on Hysteresis Modeling and Micromagnetics (HMM 2023) (p. 1), Vienna, Austria. (reposiTUm)

23.   Sverdlov, V., Bendra, M., Pruckner, B., Jorstad, N., Hadamek, T., Ender, J., Lacerda de Orio, R., Gös, W. (2023).
Spin and Charge Transport in Ultra-Scaled MRAM Cells.
In Proceedings of the International Conference “Micro- and Nanoelectronics” (ICMNE) (p. 55), Moscow-Zvenigorod, Russian Federation. https://doi.org/10.29003/m3563.ICMNE-2023 (reposiTUm)

22.   Bendra, M., Fiorentini, S., Hadamek, T., Jorstad, N., Ender, J., Lacerda de Orio, R., Selberherr, S., Goes, W., Sverdlov, V. (2023).
Switching Composite Free Layers in Ultra-Scaled MRAM Cells.
In 22nd International Winterschool - New Developments in Solid State Physics - Abstract Book (pp. 184–185), Mauterndorf, Austria. (reposiTUm)

21.   Bendra, M., Jorstad, N., Lacerda de Orio, R., Selberherr, S., Goes, W., Sverdlov, V. (2023).
Unified Modeling of Ultra-Scaled STT-MRAM Cells: Harnessing Parasitic Effects for Enhanced Data Storage Dynamics.
In IEDM 2023 Special MRAM poster session, San Francisco, United States. (reposiTUm)

20.   Sverdlov, V., Bendra, M., Fiorentini, S., Ender, J., Lacerda de Orio, R., Hadamek, T., Loch, W., Jorstad, N., Goes, W., Selberherr, S. (2022).
Advanced Modeling of Emerging Devices for Digital Spintronics.
In 2nd International Conference on Nanoscience and Nanotechnology (p. 40), Dubai, United Arab Emirates. (reposiTUm)

19.   Sverdlov, V., Bendra, M., Fiorentini, S., Ender, J., Lacerda de Orio, R., Hadamek, T., Loch, W., Jorstad, N., Goes, W., Selberherr, S. (2022).
Advanced Modeling of Emerging Magneto-Resistive Memory.
In NANOMEET 2022 2nd International Meet, Expo on Nanotechnology (pp. 78–79), Edinburgh, United Kingdom. (reposiTUm)

18.   Ender, J., Fiorentini, S., Orio, R., Hadámek, T., Bendra, M., Goes, W., Selberherr, S., Sverdlov, V. (2022).
Advances in Modeling Emerging Magnetoresistive Random Access Memories: From Finite Element Methods to Machine Learning Approaches.
In Proc. SPIE 12157, International Conference on Micro- and Nano-Electronics 2021, Zvenigorod, Russian Federation. https://doi.org/10.1117/12.2624595 (reposiTUm)

17.   Fiorentini, S., Loch, W., Bendra, M., Jørstad, N., Ender, J., Orio, R., Hadámek, T., Goes, W., Sverdlov, V., Selberherr, S. (2022).
Design Analysis of Ultra-Scaled MRAM Cells.
In Proceedings of 2022 IEEE 16th International Conference on Solid-State, Integrated Circuit Technology (ICSICT), Nanjing, China, China. (reposiTUm)

16.   Sverdlov, V., Bendra, M., Fiorentini, S., Ender, J., Orio, R., Hadámek, T., Loch, W., Jørstad, N., Goes, W., Selberherr, S. (2022).
Emerging Devices for Digital Spintronics.
In 2nd Global Conference, Expo on Nanotechnology, Nanoscience (pp. 32–33), online, INT. (reposiTUm)

15.   Fiorentini, S., Bendra, M., Ender, J., Goes, W., Sverdlov, V., Selberherr, S. (2022).
Evaluating Spin Transfer Torques in Multilayered Magnetic Tunnel Junctions and Spin Valves.
In Workshop on Innovative Nanoscale Devices and Systems. Book of Abstracts (pp. 44–45), Lihue, HI, United States. (reposiTUm)

14.   Jorstad, N., Fiorentini, S., Ender, J., Lacerda de Orio, R., Hadamek, T., Loch, W., Bendra, M., Goes, W., Selberherr, S., Sverdlov, V. (2022).
Finite Element Modeling of Spin-Orbit Torques.
In Proceedings of the Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS 2022)) (pp. 1–2), Udine, Italy. (reposiTUm)

13.   Bendra, M., Fiorentini, S., Ender, J., Orio, R., Hadámek, T., Loch, W., Jørstad, N., Goes, W., Selberherr, S. (2022).
Interface Effects in Ultra-Scaled MRAM Cells.
In Letters from the 8th Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS) 2022 (p. 108373), Udine, Italy. https://doi.org/10.1016/j.sse.2022.108373 (reposiTUm)

12.   Sverdlov, V., Bendra, M., Fiorentini, S., Ender, J., Orio, R., Hadámek, T., Loch, W., Jørstad, N., Selberherr, S. (2022).
Modeling Advanced Magnetoresistive Memory: A Journey From Finite Element Methods to Machine Learning Approaches.
In 2nd Global Webinar on Nanoscience, Nanotechnology, online, INT. (reposiTUm)

11.   Fiorentini, S., Bendra, M., Ender, J., Hadamek, T., Loch, W., Jorstad, N., Lacerda de Orio, R., Goes, W., Selberherr, S., Sverdlov, V. (2022).
Modeling Advanced Spintronic Based Magnetoresistive Memory.
In International Conference on Microwave, THz Technologies, Wireless Communications and OptoElectronics (IRPhE 2022) (pp. 49–52), Yerevan, Armenia. https://doi.org/10.1049/icp.2022.2795 (reposiTUm)

10.   Sverdlov, V., Loch, W., Bendra, M., Fiorentini, S., Ender, J., Orio, R., Hadámek, T., Jorstad, N., Goes, W., Selberherr, S. (2022).
Modeling Approach to Ultra-Scaled MRAM Cells.
In Book of Abstracts of the International Meet On Applied Science, Engineering and Technology (ASETMEET) (pp. 7–8), Taastrup, Copenhagen. (reposiTUm)

9.   Bendra, M., Loch, W., Jorstad, N., Fiorentini, S., Selberherr, S., Gös, W., Sverdlov, V. (2022).
Modeling Ultra-Scaled Multi-Layer STT-MRAM Cells: A Unified Spin and Charge Drift-Diffusion Approach.
In Special MRAM poster session IEDM (pp. 18–19), San Francisco, CA, United States. (reposiTUm)

8.   Fiorentini, S., Bendra, M., Ender, J., Orio, R., Goes, W., Selberherr, S., Sverdlov, V. (2022).
Spin Torques in ULTRA-Scaled MRAM Devices.
In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 348–351), Milan, Italy. (reposiTUm)

7.   Bendra, M., Fiorentini, S., Ender, J., Orio, R., Hadámek, T., Loch, W., Jørstad, N., Selberherr, S., Goes, W., Sverdlov, V. (2022).
Spin Transfer Torques in Ultra-Scaled MRAM Cells.
In 2022 45th Jubilee International Convention on Information, Communication and Electronic Technology (MIPRO) (pp. 129–132), Opatija, Croatia. (reposiTUm)

6.   Hadámek, T., Fiorentini, S., Bendra, M., Orio, R., Loch, W., Jorstad, N., Selberherr, S., Goes, W., Sverdlov, V. (2022).
Temperature Modeling in STT-MRAM:A Fully Three-Dimensional Finite Element Approach.
In Book of Abstracts of the International Conference on Nanostructured Materials (NANO), Sevilla, Spain. (reposiTUm)

5.   Ender, J., Fiorentini, S., Orio, R., Hadámek, T., Bendra, M., Goes, W., Selberherr, S., Sverdlov, V. (2021).
Advanced Modeling of Emerging MRAM: From Finite Element Methods to Machine Learning Approaches.
In Proceedings of the International Conference Micro- and Nanoelectronics (ICMNE), Moscow-Zvenigorod. (reposiTUm)

4.   Bendra, M., Ender, J., Fiorentini, S., Hadámek, T., Orio, R., Goes, W., Selberherr, S., Sverdlov, V. (2021).
Finite Element Method Approach to MRAM Modeling.
In 2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO), Opatija, Croatia. https://doi.org/10.23919/mipro52101.2021.9597194 (reposiTUm)

3.   Fiorentini, S., Bendra, M., Ender, J., Orio, R., Selberherr, S., Goes, W., Sverdlov, V. (2021).
Spin and Charge Drift-Diffusion in Ultra-Scaled MRAM Cells.
In Proceedings of the IEEE International Electron Devices Meeting (IEDM) Special Poster Session Dedicated to MRAM, San Francisco, CA, USA. https://doi.org/10.21203/rs.3.rs-1915307/v1 (reposiTUm)

2.   Hadamek, T., Bendra, M., Fiorentini, S., Ender, J., de Orio, R., Goes, W., Selberherr, S., Sverdlov, V. (2021).
Temperature Increase in MRAM at Writing: A Finite Element Approach.
In 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS). https://doi.org/10.1109/eurosoi-ulis53016.2021.9560669 (reposiTUm)

1.   Hadámek, T., Bendra, M., Fiorentini, S., Ender, J., Orio, R., Gös, W., Selberherr, S., Sverdlov, V. (2021).
Temperature Increase in STT-MRAM at Writing: A Fully Three-Dimensional Finite Element Approach.
In 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS'2021), Caen, France. https://doi.org/10.1109/EuroSOI-ULIS53016.2021.9560669 (reposiTUm)