Publications Markus Bina
37 recordsPublications in Scientific Journals
8. | Rupp, K., Jungemann, C., Hong, S.-M., Bina, M., Grasser, T., Jüngel, A. (2016). A Review of Recent Advances in the Spherical Harmonics Expansion Method for Semiconductor Device Simulation. Journal of Computational Electronics. https://doi.org/10.1007/s10825-016-0828-z (reposiTUm) | |
7. | Schwiedrzik, J. J., Gross, T., Bina, M., Pretterklieber, M., Zysset, P. K., Pahr, D. H. (2016). Experimental Validation of a Nonlinear μFE Model Based on Cohesive-Frictional Plasticity for Trabecular Bone. International Journal for Numerical Methods in Biomedical Engineering, 32(4). (reposiTUm) | |
6. | Illarionov, Y., Bina, M., Tyaginov, S., Rott, K., Kaczer, B., Reisinger, H., Grasser, T. (2015). Extraction of the Lateral Position of Border Traps in Nanoscale MOSFETs. IEEE Transactions on Electron Devices, 62(9), 2730–2737. https://doi.org/10.1109/ted.2015.2454433 (reposiTUm) | |
5. | Sharma, P., Tyaginov, S. E., Wimmer, Y., Rudolf, F., Rupp, K., Bina, M., Enichlmair, H., Park, J. M., Minixhofer, R., Ceric, H., Grasser, T. (2015). Modeling of Hot-Carrier Degradation in nLDMOS Devices: Different Approaches to the Solution of the Boltzmann Transport Equation. IEEE Transactions on Electron Devices, 62(6), 1811–1818. https://doi.org/10.1109/ted.2015.2421282 (reposiTUm) | |
4. | Tyaginov, S., Bina, M., Franco, J., Wimmer, Y., Kaczer, B., Grasser, T. (2015). On the Importance of Electron-Electron Scattering for Hot-Carrier Degradation. Japanese Journal of Applied Physics, 54(4S), 04DC18. https://doi.org/10.7567/jjap.54.04dc18 (reposiTUm) | |
3. | Illarionov, Y. Yu., Bina, M., Tyaginov, S. E., Grasser, T. (2014). An Analytical Approach for the Determination of the Lateral Trap Position in Ultra-Scaled MOSFETs. Japanese Journal of Applied Physics, 53(4S), 04EC22. https://doi.org/10.7567/jjap.53.04ec22 (reposiTUm) | |
2. | Tyaginov, S. E., Illarionov, Yu. Yu., Vexler, M. I., Bina, M., Cervenka, J., Franco, J., Kaczer, B., Grasser, T. (2014). Modeling of Deep-Submicron Silicon-Based MISFETs With Calcium Fluoride Dielectric. Journal of Computational Electronics, 13(3), 733–738. https://doi.org/10.1007/s10825-014-0593-9 (reposiTUm) | |
1. | Bina, M., Tyaginov, S., Franco, J., Rupp, K., Wimmer, Y., Osintsev, D., Kaczer, B., Grasser, T. (2014). Predictive Hot-Carrier Modeling of N-Channel MOSFETs. IEEE Transactions on Electron Devices, 61(9), 3103–3110. https://doi.org/10.1109/ted.2014.2340575 (reposiTUm) | |
Contributions to Books
1. | Bina, M., Rupp, K. (2015). The Spherical Harmonics Expansion Method for Assessing Hot Carrier Degradation. In T. Grasser (Ed.), Hot Carrier Degradation in Semiconductor Devices (pp. 197–220). Springer International Publishing. https://doi.org/10.1007/978-3-319-08994-2_6 (reposiTUm) | |
Talks and Poster Presentations (with Proceedings-Entry)
21. | Kaczer, B., Franco, J., Cho, M., Grasser, T., Roussel, P., Tyaginov, S., Bina, M., Wimmer, Y., Procel, L., Trojman, L., Crupi, F., Pitner, G., Putcha, V., Weckx, P., Bury, E., Ji, Z., De Keersgieter, A., Chiarella, T., Horiguchi, N., Groeseneken, G., Thean, A. (2015). Origins and Implications of Increased Channel Hot Carrier Variability in nFinFETs. In 2015 IEEE International Reliability Physics Symposium, Phoenix. https://doi.org/10.1109/irps.2015.7112706 (reposiTUm) | |
20. | Sharma, P., Tyaginov, S., Wimmer, Y., Rudolf, F., Rupp, K., Bina, M., Enichlmair, H., Park, J., Ceric, H., Grasser, T. (2015). Predictive and Efficient Modeling of Hot-Carrier Degradation in nLDMOS Devices. In 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD), Hong Kong, China. https://doi.org/10.1109/ispsd.2015.7123471 (reposiTUm) | |
19. | Illarionov, Y., Bina, M., Tyaginov, S., Rott, K., Reisinger, H., Kaczer, B., Grasser, T. (2014). A Reliable Method for the Extraction of the Lateral Position of Defects in Ultra-Scaled MOSFETs. In Proceedings of the International Reliability Physics Symposium (IRPS) (pp. XT13.1–XT13.6), Phoenix. (reposiTUm) | |
18. | Tyaginov, S., Bina, M., Franco, J., Wimmer, Y., Osintsev, D., Kaczer, B., Grasser, T. (2014). A Predictive Physical Model for Hot-Carrier Degradation in Ultra-Scaled MOSFETs. In 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan. https://doi.org/10.1109/sispad.2014.6931570 (reposiTUm) | |
17. | Rupp, K., Bina, M., Wimmer, Y., Jungel, A., Grasser, T. (2014). Cell-Centered Finite Volume Schemes for Semiconductor Device Simulation. In 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan. https://doi.org/10.1109/sispad.2014.6931639 (reposiTUm) | |
16. | Tyaginov, S., Bina, M., Franco, J., Wimmer, Y., Rudolf, F., Enichlmair, H., Park, J., Kaczer, B., Ceric, H., Grasser, T. (2014). Dominant Mechanisms of Hot-Carrier Degradation in Short- And Long-Channel Transistors. In 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW), S. Lake Tahoe. https://doi.org/10.1109/iirw.2014.7049512 (reposiTUm) | |
15. | Tyaginov, S., Bina, M., Franco, J., Kaczer, B., Grasser, T. (2014). On the Importance of Electron-Electron Scattering for Hot-Carrier Degradation. In Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials (SSDM) (pp. 858–859), Fukuoka, Japan. (reposiTUm) | |
14. | Tyaginov, S., Bina, M., Franco, J., Osintsev, D., Triebl, O., Kaczer, B., Grasser, T. (2014). Physical Modeling of Hot-Carrier Degradation for Short- And Long-Channel MOSFETs. In Proceedings of the International Reliability Physics Symposium (IRPS) (pp. XT16.1–XT16.8), Phoenix. (reposiTUm) | |
13. | Wimmer, Y., Tyaginov, S., Rudolf, F., Rupp, K., Bina, M., Enichlmair, H., Park, J., Minixhofer, R., Ceric, H., Grasser, T. (2014). Physical Modeling of Hot-Carrier Degradation in nLDMOS Transistors. In 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW), S. Lake Tahoe. https://doi.org/10.1109/iirw.2014.7049511 (reposiTUm) | |
12. | Goes, W., Toledano-Luque, M., Schanovsky, F., Bina, M., Baumgartner, O., Kaczer, B., Grasser, T. (2013). (Invited) Multiphonon Processes as the Origin of Reliability Issues. In ECS Transactions (pp. 31–47), Honolulu, Austria. https://doi.org/10.1149/05807.0031ecst (reposiTUm) | |
11. | Illarionov, Y., Tyaginov, S., Bina, M., Grasser, T. (2013). A Method to Determine the Lateral Trap Position in Ultra-Scaled MOSFETs. In Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials(SSDM) (pp. 728–729), Tsukuba, Austria. (reposiTUm) | |
10. | Toledano-Luque, M., Kaczer, B., Franco, J., Roussel, P., Bina, M., Grasser, T., Cho, M., Weckx, P., Groeseneken, G. (2013). Degradation of Time Dependent Variability Due to Interface State Generation. In 2013 Symposium on VLSI Technology (VLSIT) (pp. 190–191), Kyoto, Japan. (reposiTUm) | |
9. | Baumgartner, O., Bina, M., Goes, W., Schanovsky, F., Toledano-Luque, M., Kaczer, B., Kosina, H., Grasser, T. (2013). Direct Tunneling and Gate Current Fluctuations. In 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, United Kingdom. https://doi.org/10.1109/sispad.2013.6650563 (reposiTUm) | |
8. | Tyaginov, S., Bina, M., Franco, J., Osintsev, D., Wimmer, Y., Kaczer, B., Grasser, T. (2013). Essential Ingredients for Modeling of Hot-Carrier Degradation in Ultra-Scaled MOSFETs. In Final Report of the IEEE International Integrated Reliability Workshop (IIRW) (pp. 98–101), S. Lake Tahoe. (reposiTUm) | |
7. | Franco, J., Kaczer, B., Toledano-Luque, M., Roussel, P., Groeseneken, G., Schwarz, B., Bina, M., Waltl, M., Wagner, P., Grasser, T. (2013). Reduction of the BTI Time-Dependent Variability in Nanoscaled MOSFETs by Body Bias. In Proceedings of the International Reliability Physics Symposium (IRPS) (pp. 1–6), Phoenix. (reposiTUm) | |
6. | Gös, W., Toledano-Luque, M., Baumgartner, O., Bina, M., Schanovsky, F., Kaczer, B., Grasser, T. (2013). Understanding Correlated Drain and Gate Current Fluctuations. In Proceedings of the 20th International Symposium on the Physical, Failure Analysis of Integrated Circuits (pp. 51–56), Singapore. (reposiTUm) | |
5. | Rupp, K., Jungemann, C., Bina, M., Jüngel, A., Grasser, T. (2012). Bipolar Spherical Harmonics Expansions of the Boltzmann Transport Equation. In 2012 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 19–22), Denver, Colorado, United States. (reposiTUm) | |
4. | Bina, M., Rupp, K., Tyaginov, S., Triebl, O., Grasser, T. (2012). Modeling of Hot Carrier Degradation Using a Spherical Harmonics Expansion of the Bipolar Boltzmann Transport Equation. In 2012 International Electron Devices Meeting, San Francisco, CA, USA. https://doi.org/10.1109/iedm.2012.6479138 (reposiTUm) | |
3. | Bina, M., Triebl, O., Schwarz, B., Karner, M., Kaczer, B., Grasser, T. (2012). Simulation of Reliability on Nanoscale Devices. In 2012 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 109–112), Denver, Colorado, United States. (reposiTUm) | |
2. | Kaczer, B., Franco, J., Toledano-Luque, M., Roussel, P., Bukhori, M., Asenov, A., Schwarz, B., Bina, M., Grasser, T., Groeseneken, G. (2012). The Relevance of Deeply-Scaled FET Threshold Voltage Shifts for Operation Lifetimes. In Proceedings of the International Reliability Physics Symposium (IRPS) (p. 6), Phoenix. (reposiTUm) | |
1. | Bina, M., Aichinger, T., Pobegen, G., Gös, W., Grasser, T. (2011). Modeling of DCIV Recombination Currents Using a Multistate Multiphonon Model. In Final Report of the IEEE International Integrated Reliability Workshop (IIRW) (pp. 27–31), California. (reposiTUm) | |
Talks and Poster Presentations (without Proceedings-Entry)
2. | Rupp, K., Bina, M., Morhammer, A., Grasser, T., Jüngel, A. (2015). ViennaSHE: A Semiconductor Device Simulator Based on the Spherical Harmonics Expansion Method. Workshop on Applied Mathematics and Simulation for Semiconductors (AMaSIS), Berlin, Germany, EU. (reposiTUm) | |
1. | Gross, T., Bina, M., Schwiedrzik, J. J., Zysset, P. K., Pahr, D. H. (2014). Non-Linear Micro FE Simulations Based on the ParFEAP Framework. 12th International Symposium on Comupter Methods in Biomechanics and Biomedical Engineering, CMBBE 2014, Amsterdam, EU. (reposiTUm) | |
Doctor's Theses (authored and supervised)
1. | Bina, M. (2014). Charge Transport Models for Reliability Engineering of Semiconductor Devices Technische Universität Wien. https://doi.org/10.34726/hss.2014.24463 (reposiTUm) | |
Diploma and Master Theses (authored and supervised)
4. | Bina, M. (2013). Extension of a Parallel Nonlinear Finite Element Simulation Software for Human Bone Technische Universität Wien. https://resolver.obvsg.at/urn:nbn:at:at-ubtuw:1-50634 (reposiTUm) | |
3. | B. Schwarz: "Simulation of Random Dopant Fluctuations with a Quantum Corrected Drift Diffusion Model"; Supervisor: T. Grasser, M. Bina; Institut für Mikroelektronik, 2011; final examination: 2011-06-17. | |
2. | Schwarz, B. (2011). Simulation of Random Dopant Fluctuations With a Quantum-Corrected Drift-Diffusion Model Technische Universität Wien. https://resolver.obvsg.at/urn:nbn:at:at-ubtuw:1-41533 (reposiTUm) | |
1. | Bina, M. (2010). Simulation of Interface States Generated During Stress in MOSFETs Technische Universität Wien. (reposiTUm) | |