Publications Markus Bina

37 records

Publications in Scientific Journals

8.   Rupp, K., Jungemann, C., Hong, S.-M., Bina, M., Grasser, T., Jüngel, A. (2016).
A Review of Recent Advances in the Spherical Harmonics Expansion Method for Semiconductor Device Simulation.
Journal of Computational Electronics. https://doi.org/10.1007/s10825-016-0828-z (reposiTUm)

7.   Schwiedrzik, J. J., Gross, T., Bina, M., Pretterklieber, M., Zysset, P. K., Pahr, D. H. (2016).
Experimental Validation of a Nonlinear μFE Model Based on Cohesive-Frictional Plasticity for Trabecular Bone.
International Journal for Numerical Methods in Biomedical Engineering, 32(4). (reposiTUm)

6.   Illarionov, Y., Bina, M., Tyaginov, S., Rott, K., Kaczer, B., Reisinger, H., Grasser, T. (2015).
Extraction of the Lateral Position of Border Traps in Nanoscale MOSFETs.
IEEE Transactions on Electron Devices, 62(9), 2730–2737. https://doi.org/10.1109/ted.2015.2454433 (reposiTUm)

5.   Sharma, P., Tyaginov, S. E., Wimmer, Y., Rudolf, F., Rupp, K., Bina, M., Enichlmair, H., Park, J. M., Minixhofer, R., Ceric, H., Grasser, T. (2015).
Modeling of Hot-Carrier Degradation in nLDMOS Devices: Different Approaches to the Solution of the Boltzmann Transport Equation.
IEEE Transactions on Electron Devices, 62(6), 1811–1818. https://doi.org/10.1109/ted.2015.2421282 (reposiTUm)

4.   Tyaginov, S., Bina, M., Franco, J., Wimmer, Y., Kaczer, B., Grasser, T. (2015).
On the Importance of Electron-Electron Scattering for Hot-Carrier Degradation.
Japanese Journal of Applied Physics, 54(4S), 04DC18. https://doi.org/10.7567/jjap.54.04dc18 (reposiTUm)

3.   Illarionov, Y. Yu., Bina, M., Tyaginov, S. E., Grasser, T. (2014).
An Analytical Approach for the Determination of the Lateral Trap Position in Ultra-Scaled MOSFETs.
Japanese Journal of Applied Physics, 53(4S), 04EC22. https://doi.org/10.7567/jjap.53.04ec22 (reposiTUm)

2.   Tyaginov, S. E., Illarionov, Yu. Yu., Vexler, M. I., Bina, M., Cervenka, J., Franco, J., Kaczer, B., Grasser, T. (2014).
Modeling of Deep-Submicron Silicon-Based MISFETs With Calcium Fluoride Dielectric.
Journal of Computational Electronics, 13(3), 733–738. https://doi.org/10.1007/s10825-014-0593-9 (reposiTUm)

1.   Bina, M., Tyaginov, S., Franco, J., Rupp, K., Wimmer, Y., Osintsev, D., Kaczer, B., Grasser, T. (2014).
Predictive Hot-Carrier Modeling of N-Channel MOSFETs.
IEEE Transactions on Electron Devices, 61(9), 3103–3110. https://doi.org/10.1109/ted.2014.2340575 (reposiTUm)

Contributions to Books

1.   Bina, M., Rupp, K. (2015).
The Spherical Harmonics Expansion Method for Assessing Hot Carrier Degradation.
In T. Grasser (Ed.), Hot Carrier Degradation in Semiconductor Devices (pp. 197–220). Springer International Publishing. https://doi.org/10.1007/978-3-319-08994-2_6 (reposiTUm)

Talks and Poster Presentations (with Proceedings-Entry)

21.   Kaczer, B., Franco, J., Cho, M., Grasser, T., Roussel, P., Tyaginov, S., Bina, M., Wimmer, Y., Procel, L., Trojman, L., Crupi, F., Pitner, G., Putcha, V., Weckx, P., Bury, E., Ji, Z., De Keersgieter, A., Chiarella, T., Horiguchi, N., Groeseneken, G., Thean, A. (2015).
Origins and Implications of Increased Channel Hot Carrier Variability in nFinFETs.
In 2015 IEEE International Reliability Physics Symposium, Phoenix. https://doi.org/10.1109/irps.2015.7112706 (reposiTUm)

20.   Sharma, P., Tyaginov, S., Wimmer, Y., Rudolf, F., Rupp, K., Bina, M., Enichlmair, H., Park, J., Ceric, H., Grasser, T. (2015).
Predictive and Efficient Modeling of Hot-Carrier Degradation in nLDMOS Devices.
In 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD), Hong Kong, China. https://doi.org/10.1109/ispsd.2015.7123471 (reposiTUm)

19.   Illarionov, Y., Bina, M., Tyaginov, S., Rott, K., Reisinger, H., Kaczer, B., Grasser, T. (2014).
A Reliable Method for the Extraction of the Lateral Position of Defects in Ultra-Scaled MOSFETs.
In Proceedings of the International Reliability Physics Symposium (IRPS) (pp. XT13.1–XT13.6), Phoenix. (reposiTUm)

18.   Tyaginov, S., Bina, M., Franco, J., Wimmer, Y., Osintsev, D., Kaczer, B., Grasser, T. (2014).
A Predictive Physical Model for Hot-Carrier Degradation in Ultra-Scaled MOSFETs.
In 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan. https://doi.org/10.1109/sispad.2014.6931570 (reposiTUm)

17.   Rupp, K., Bina, M., Wimmer, Y., Jungel, A., Grasser, T. (2014).
Cell-Centered Finite Volume Schemes for Semiconductor Device Simulation.
In 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan. https://doi.org/10.1109/sispad.2014.6931639 (reposiTUm)

16.   Tyaginov, S., Bina, M., Franco, J., Wimmer, Y., Rudolf, F., Enichlmair, H., Park, J., Kaczer, B., Ceric, H., Grasser, T. (2014).
Dominant Mechanisms of Hot-Carrier Degradation in Short- And Long-Channel Transistors.
In 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW), S. Lake Tahoe. https://doi.org/10.1109/iirw.2014.7049512 (reposiTUm)

15.   Tyaginov, S., Bina, M., Franco, J., Kaczer, B., Grasser, T. (2014).
On the Importance of Electron-Electron Scattering for Hot-Carrier Degradation.
In Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials (SSDM) (pp. 858–859), Fukuoka, Japan. (reposiTUm)

14.   Tyaginov, S., Bina, M., Franco, J., Osintsev, D., Triebl, O., Kaczer, B., Grasser, T. (2014).
Physical Modeling of Hot-Carrier Degradation for Short- And Long-Channel MOSFETs.
In Proceedings of the International Reliability Physics Symposium (IRPS) (pp. XT16.1–XT16.8), Phoenix. (reposiTUm)

13.   Wimmer, Y., Tyaginov, S., Rudolf, F., Rupp, K., Bina, M., Enichlmair, H., Park, J., Minixhofer, R., Ceric, H., Grasser, T. (2014).
Physical Modeling of Hot-Carrier Degradation in nLDMOS Transistors.
In 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW), S. Lake Tahoe. https://doi.org/10.1109/iirw.2014.7049511 (reposiTUm)

12.   Goes, W., Toledano-Luque, M., Schanovsky, F., Bina, M., Baumgartner, O., Kaczer, B., Grasser, T. (2013).
(Invited) Multiphonon Processes as the Origin of Reliability Issues.
In ECS Transactions (pp. 31–47), Honolulu, Austria. https://doi.org/10.1149/05807.0031ecst (reposiTUm)

11.   Illarionov, Y., Tyaginov, S., Bina, M., Grasser, T. (2013).
A Method to Determine the Lateral Trap Position in Ultra-Scaled MOSFETs.
In Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials(SSDM) (pp. 728–729), Tsukuba, Austria. (reposiTUm)

10.   Toledano-Luque, M., Kaczer, B., Franco, J., Roussel, P., Bina, M., Grasser, T., Cho, M., Weckx, P., Groeseneken, G. (2013).
Degradation of Time Dependent Variability Due to Interface State Generation.
In 2013 Symposium on VLSI Technology (VLSIT) (pp. 190–191), Kyoto, Japan. (reposiTUm)

9.   Baumgartner, O., Bina, M., Goes, W., Schanovsky, F., Toledano-Luque, M., Kaczer, B., Kosina, H., Grasser, T. (2013).
Direct Tunneling and Gate Current Fluctuations.
In 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, UK. https://doi.org/10.1109/sispad.2013.6650563 (reposiTUm)

8.   Tyaginov, S., Bina, M., Franco, J., Osintsev, D., Wimmer, Y., Kaczer, B., Grasser, T. (2013).
Essential Ingredients for Modeling of Hot-Carrier Degradation in Ultra-Scaled MOSFETs.
In Final Report of the IEEE International Integrated Reliability Workshop (IIRW) (pp. 98–101), S. Lake Tahoe. (reposiTUm)

7.   Franco, J., Kaczer, B., Toledano-Luque, M., Roussel, P., Groeseneken, G., Schwarz, B., Bina, M., Waltl, M., Wagner, P., Grasser, T. (2013).
Reduction of the BTI Time-Dependent Variability in Nanoscaled MOSFETs by Body Bias.
In Proceedings of the International Reliability Physics Symposium (IRPS) (pp. 1–6), Phoenix. (reposiTUm)

6.   Gös, W., Toledano-Luque, M., Baumgartner, O., Bina, M., Schanovsky, F., Kaczer, B., Grasser, T. (2013).
Understanding Correlated Drain and Gate Current Fluctuations.
In Proceedings of the 20th International Symposium on the Physical, Failure Analysis of Integrated Circuits (pp. 51–56), Singapore. (reposiTUm)

5.   Rupp, K., Jungemann, C., Bina, M., Jüngel, A., Grasser, T. (2012).
Bipolar Spherical Harmonics Expansions of the Boltzmann Transport Equation.
In 2012 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 19–22), Denver, Colorado, United States. (reposiTUm)

4.   Bina, M., Rupp, K., Tyaginov, S., Triebl, O., Grasser, T. (2012).
Modeling of Hot Carrier Degradation Using a Spherical Harmonics Expansion of the Bipolar Boltzmann Transport Equation.
In 2012 International Electron Devices Meeting, San Francisco, CA, USA. https://doi.org/10.1109/iedm.2012.6479138 (reposiTUm)

3.   Bina, M., Triebl, O., Schwarz, B., Karner, M., Kaczer, B., Grasser, T. (2012).
Simulation of Reliability on Nanoscale Devices.
In 2012 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 109–112), Denver, Colorado, United States. (reposiTUm)

2.   Kaczer, B., Franco, J., Toledano-Luque, M., Roussel, P., Bukhori, M., Asenov, A., Schwarz, B., Bina, M., Grasser, T., Groeseneken, G. (2012).
The Relevance of Deeply-Scaled FET Threshold Voltage Shifts for Operation Lifetimes.
In Proceedings of the International Reliability Physics Symposium (IRPS) (p. 6), Phoenix. (reposiTUm)

1.   Bina, M., Aichinger, T., Pobegen, G., Gös, W., Grasser, T. (2011).
Modeling of DCIV Recombination Currents Using a Multistate Multiphonon Model.
In Final Report of the IEEE International Integrated Reliability Workshop (IIRW) (pp. 27–31), California. (reposiTUm)

Talks and Poster Presentations (without Proceedings-Entry)

2.   Rupp, K., Bina, M., Morhammer, A., Grasser, T., Jüngel, A. (2015).
ViennaSHE: A Semiconductor Device Simulator Based on the Spherical Harmonics Expansion Method.
Workshop on Applied Mathematics and Simulation for Semiconductors (AMaSIS), Berlin, Germany, EU. (reposiTUm)

1.   Gross, T., Bina, M., Schwiedrzik, J. J., Zysset, P. K., Pahr, D. H. (2014).
Non-Linear Micro FE Simulations Based on the ParFEAP Framework.
12th International Symposium on Comupter Methods in Biomechanics and Biomedical Engineering, CMBBE 2014, Amsterdam, EU. (reposiTUm)

Doctor's Theses (authored and supervised)

Diploma and Master Theses (authored and supervised)

4.   Bina, M. (2013).
Extension of a Parallel Nonlinear Finite Element Simulation Software for Human Bone
Technische Universität Wien. https://resolver.obvsg.at/urn:nbn:at:at-ubtuw:1-50634 (reposiTUm)

3.  B. Schwarz:
"Simulation of Random Dopant Fluctuations with a Quantum Corrected Drift Diffusion Model";
Supervisor: T. Grasser, M. Bina; Institut für Mikroelektronik, 2011; final examination: 2011-06-17.

2.   Schwarz, B. (2011).
Simulation of Random Dopant Fluctuations With a Quantum-Corrected Drift-Diffusion Model
Technische Universität Wien. https://resolver.obvsg.at/urn:nbn:at:at-ubtuw:1-41533 (reposiTUm)

1.   Bina, M. (2010).
Simulation of Interface States Generated During Stress in MOSFETs
Technische Universität Wien. (reposiTUm)