Staff Person Publications

Publications Markus Bina

37 records

Publications in Scientific Journals

8.	K. Rupp, C. Jungemann, S.-M Hong, M. Bina, T. Grasser, A. Jüngel: "A Review of Recent Advances in the Spherical Harmonics Expansion Method for Semiconductor Device Simulation"; Journal of Computational Electronics, 15, (2016), 939 - 958 doi:10.1007/s10825-016-0828-z. BibTeX
7.	J.J. Schwiedrzik, T. Gross, M. Bina, M. Pretterklieber, P.K. Zysset, D. H. Pahr: "Experimental Validation of a Nonlinear μFE Model Based on Cohesive-Frictional Plasticity for Trabecular Bone"; International Journal for Numerical Methods in Biomedical Engineering, 32, (2016), doi:10.1002/cnm.2739. BibTeX
6.	Yu. Illarionov, M. Bina, S. E. Tyaginov, K. Rott, B. Kaczer, H. Reisinger, T. Grasser: "Extraction of the Lateral Position of Border Traps in Nanoscale MOSFETs"; IEEE Transactions on Electron Devices, 62, (2015), 2730 - 2737 doi:10.1109/TED.2015.2454433. BibTeX
5.	P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, K. Rupp, M. Bina, H. Enichlmair, J.M. Park, R. Minixhofer, H. Ceric, T. Grasser: "Modeling of Hot-Carrier Degradation in nLDMOS Devices: Different Approaches to the Solution of the Boltzmann Transport Equation"; IEEE Transactions on Electron Devices, 62, (2015), 1811 - 1818 doi:10.1109/TED.2015.2421282. BibTeX
4.	S. E. Tyaginov, M. Bina, J. Franco, Y. Wimmer, B. Kaczer, T. Grasser: "On the Importance of Electron-Electron Scattering for Hot-Carrier Degradation"; Japanese Journal of Applied Physics, 54, (2015), 1 - 6 doi:10.7567/JJAP.54.04DC18. BibTeX
3.	M. Bina, S. E. Tyaginov, J. Franco, K. Rupp, Y. Wimmer, D. Osintsev, B. Kaczer, T. Grasser: "Predictive Hot-Carrier Modeling of n-Channel MOSFETs"; IEEE Transactions on Electron Devices, 61, (2014), 3103 - 3110 doi:10.1109/TED.2014.2340575. BibTeX
2.	Yu. Illarionov, M. Bina, S. E. Tyaginov, T. Grasser: "An Analytical Approach for the Determination of the Lateral Trap Position in Ultra-Scaled MOSFETs"; Japanese Journal of Applied Physics, 53, (2014), 04EC22-1 - 04EC22-4 doi:10.7567/JJAP.53.04EC22. BibTeX
1.	S. E. Tyaginov, Yu. Illarionov, M. I. Vexler, M. Bina, J. Cervenka, J. Franco, B. Kaczer, T. Grasser: "Modeling of Deep-Submicron Silicon-Based MISFETs with Calcium Fluoride Dielectric"; Journal of Computational Electronics, 13, (2014), 733 - 738 doi:10.1007/s10825-014-0593-9. BibTeX

Contributions to Books

1.	M. Bina, K. Rupp: "The Spherical Harmonics Expansion Method for Assessing Hot Carrier Degradation"; in "Hot Carrier Degradation in Semiconductor Devices", T. Grasser (ed); Springer International Publishing, 2015, ISBN: 978-3-319-08993-5, 197 - 220 doi:10.1007/978-3-319-08994-2_6. BibTeX

Talks and Poster Presentations (with Proceedings-Entry)

22.	P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, K. Rupp, M. Bina, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser: "Predictive and Efficient Modeling of Hot-Carrier Degradation in nLDMOS Devices"; Talk: IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), Hong Kong, China; 2015-05-10 - 2015-05-14; in "Proceedings of the IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)", (2015), ISBN: 978-1-4799-6259-4, 389 - 392 doi:10.1109/ISPSD.2015.7123471. BibTeX
21.	B. Kaczer, J. Franco, M. Cho, T. Grasser, P. Roussel, S. E. Tyaginov, M. Bina, Y. Wimmer, L. M. Procel, L. Trojman, F. Crupi, G. Pitner, V. Putcha, P. Weckx, E. Bury, Z. Ji, A. De Keersgieter, T. Chiarella, N. Horiguchi, G Groeseneken, A. Thean: "Origins and Implications of Increased Channel Hot Carrier Variability in nFinFETs"; Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2015-04-19 - 2015-04-23; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2015), 6 page(s) doi:10.1109/IRPS.2015.7112706. BibTeX
20.	S. E. Tyaginov, M. Bina, J. Franco, Y. Wimmer, F. Rudolf, H. Enichlmair, J.M. Park, B. Kaczer, H. Ceric, T. Grasser: "Dominant Mechanism of Hot-Carrier Degradation in Short- and Long-Channel Transistors"; Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2014-10-12 - 2014-10-16; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2014), ISBN: 978-1-4799-7308-8, 63 - 68 doi:10.1109/IIRW.2014.7049512. BibTeX
19.	Y. Wimmer, S. E. Tyaginov, F. Rudolf, K. Rupp, M. Bina, H. Enichlmair, J.M. Park, R. Minixhofer, H. Ceric, T. Grasser: "Physical Modeling of Hot-Carrier Degradation in nLDMOS Transistors"; Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2014-10-12 - 2014-10-16; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2014), ISBN: 978-1-4799-7308-8, 58 - 62 doi:10.1109/IIRW.2014.7049511. BibTeX
18.	K. Rupp, M. Bina, Y. Wimmer, A. Jungel, T. Grasser: "Cell-Centered Finite Volume Schemes for Semiconductor Device Simulation"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 2014-09-09 - 2014-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 365 - 368 doi:10.1109/SISPAD.2014.6931639. BibTeX
17.	S. E. Tyaginov, M. Bina, J. Franco, Y. Wimmer, D. Osintsev, B. Kaczer, T. Grasser: "A Predictive Physical Model for Hot-Carrier Degradation in Ultra-Scaled MOSFETs"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 2014-09-09 - 2014-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 89 - 92 doi:10.1109/SISPAD.2014.6931570. BibTeX
16.	S. E. Tyaginov, M. Bina, J. Franco, B. Kaczer, T. Grasser: "On the Importance of Electron-electron Scattering for Hot-carrier Degradation"; Talk: International Conference on Solid State Devices and Materials (SSDM), Tsukuba, Japan; 2014-09-08 - 2014-09-11; in "Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials (SSDM)", (2014), 858 - 859. BibTeX
15.	Yu. Illarionov, M. Bina, S. E. Tyaginov, K. Rott, H. Reisinger, B. Kaczer, T. Grasser: "A Reliable Method for the Extraction of the Lateral Position of Defects in Ultra-scaled MOSFETs"; Poster: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 2014-06-01 - 2014-06-05; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2014), ISBN: 978-1-4799-3317-4, XT13.1 - XT13.6. BibTeX
14.	S. E. Tyaginov, M. Bina, J. Franco, D. Osintsev, O. Triebl, B. Kaczer, T. Grasser: "Physical Modeling of Hot-Carrier Degradation for Short- and Long-channel MOSFETs"; Poster: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 2014-06-01 - 2014-06-05; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2014), ISBN: 978-1-4799-3317-4, XT16.1 - XT16.8. BibTeX
13.	W. Gös, M. Toledano-Luque, F. Schanovsky, M. Bina, O. Baumgartner, B. Kaczer, T. Grasser: "Multi-Phonon Processes as the Origin of Reliability Issues"; Talk: Meeting of the Electrochemical Society (ECS), San Francisco, USA; (invited) 2013-10-27 - 2013-11-01; in "ECS Transactions 2013 - "Semiconductors, Dielectrics, and Materials for Nanoelectronics 11"", (2013), 58/7/, 31 - 47 doi:10.1149/05807.0031ecst. BibTeX
12.	S. E. Tyaginov, M. Bina, J. Franco, D. Osintsev, Y. Wimmer, B. Kaczer, T. Grasser: "Essential Ingredients for Modeling of Hot-Carrier Degradation in Ultra-Scaled MOSFETs"; Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 2013-10-13 - 2013-10-17; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2013), ISBN: 978-1-4799-0350-4, 98 - 101. BibTeX
11.	W. Gös, M. Toledano-Luque, O. Baumgartner, M. Bina, F. Schanovsky, B. Kaczer, T. Grasser: "Understanding Correlated Drain and Gate Current Fluctuations"; Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Arcachon, France; (invited) 2013-09-30 - 2013-10-04; in "20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2013), 51 - 56. BibTeX
10.	Yu. Illarionov, S. E. Tyaginov, M. Bina, T. Grasser: "A method to determine the lateral trap position in ultra-scaled MOSFETs"; Talk: Solid State Devices and Materials Conference (SSDM), Fukuoka, Japan; 2013-09-24 - 2013-09-27; in "Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials(SSDM)", (2013), ISBN: 978-4-86348-362-0, 728 - 729. BibTeX
9.	O. Baumgartner, M. Bina, W. Gös, F. Schanovsky, M. Toledano-Luque, B. Kaczer, H. Kosina, T. Grasser: "Direct Tunneling and Gate Current Fluctuations"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 2013-09-03 - 2013-09-05; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 17 - 20 doi:10.1109/SISPAD.2013.6650563. BibTeX
8.	W. Gös, M. Toledano-Luque, O. Baumgartner, M. Bina, F. Schanovsky, B. Kaczer, T. Grasser: "Understanding Correlated Drain and Gate Current Fluctuations"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou, China; 2013-07-15 - 2013-07-19; in "Proceedings of the 20th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2013), ISBN: 978-1-4799-0478-5, 51 - 56. BibTeX
7.	M. Toledano-Luque, B. Kaczer, J. Franco, P. Roussel, M. Bina, T. Grasser, M. Cho, P. Weckx, G Groeseneken: "Degradation of time dependent variability due to interface state generation"; Talk: International Symposium on VLSI Technology, Kyoto, Japan; 2013-06-11 - 2013-06-14; in "2013 Symposium on VLSI Technology (VLSIT)", (2013), ISBN: 978-1-4673-5226-0, 190 - 191. BibTeX
6.	J. Franco, B. Kaczer, M. Toledano-Luque, Ph. J. Roussel, G. Groeseneken, B. Schwarz, M. Bina, M. Waltl, P.-J. Wagner, T. Grasser: "Reduction of the BTI Time-Dependent Variability in Nanoscaled MOSFETs by Body Bias"; Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2013-04-14 - 2013-04-18; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2013), 1 - 6. BibTeX
5.	M. Bina, K. Rupp, S. E. Tyaginov, O. Triebl, T. Grasser: "Modeling of Hot Carrier Degradation Using a Spherical Harmonics Expansion of the Bipolar Boltzmann Transport Equation"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 2012-12-10 - 2012-12-12; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2012), 713 - 716 doi:10.1109/IEDM.2012.6479138. BibTeX
4.	M. Bina, O. Triebl, B. Schwarz, M. Karner, B. Kaczer, T. Grasser: "Simulation of Reliability on Nanoscale Devices"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 2012-09-05 - 2012-09-07; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2, 109 - 112. BibTeX
3.	K. Rupp, C. Jungemann, M. Bina, A. Jüngel, T. Grasser: "Bipolar Spherical Harmonics Expansions of the Boltzmann Transport Equation"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 2012-09-05 - 2012-09-07; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2, 19 - 22. BibTeX
2.	B. Kaczer, J. Franco, M. Toledano-Luque, Ph. J. Roussel, M. F. Bukhori, A. Asenov, B. Schwarz, M. Bina, T. Grasser, G. Groeseneken: "The Relevance of Deeply-Scaled FET Threshold Voltage Shifts for Operation Lifetimes"; Talk: International Reliability Physics Symposium (IRPS), Californi, USA; 2012-04-17 - 2012-04-19; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2012), ISBN: 978-1-4577-1680-5, 6 page(s) . BibTeX
1.	M. Bina, T. Aichinger, G. Pobegen, W. Gös, T. Grasser: "Modeling of DCIV Recombination Currents Using A Multistate Multiphonon Model"; Talk: IEEE International Integrated Reliability Workshop, South Lake Tahoe, USA; 2011-10-16 - 2011-10-20; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2011), 27 - 31. BibTeX

Talks and Poster Presentations (without Proceedings-Entry)

2.	K. Rupp, M. Bina, A. Morhammer, T. Grasser, A. Jüngel: "ViennaSHE: A Semiconductor Device Simulator Based on the Spherical Harmonics Expansion Method"; Talk: Workshop on Applied Mathematics and Simulation for Semiconductors (AMaSIS), Berlin, Germany; (invited) 2015-03-11 - 2015-03-13; . BibTeX
1.	T. Gross, M. Bina, J.J. Schwiedrzik, P.K. Zysset, D. H. Pahr: "Non-Linear Micro FE Simulations Based on the ParFEAP Framework"; Talk: 12th International Symposium on Comupter Methods in Biomechanics and Biomedical Engineering, CMBBE 2014, Amsterdam; (invited) 2014-10-13 - 2014-10-14; . BibTeX

Doctor's Theses (authored and supervised)

1.	M. Bina: "Charge Transport Models for Reliability Engineering of Semiconductor Devices"; Reviewer: T. Grasser, C. Jungemann; Institut für Mikroelektronik, 2014, oral examination: 2014-03-25. BibTeX

Diploma and Master Theses (authored and supervised)

3.	M. Bina: "Extension of a Parallel Nonlinear Finite Element Simulation Software for Human Bone"; Supervisor: D. H. Pahr; Institut für Leichtbau und Struktur-Biomechanik, 2013, . BibTeX
2.	B. Schwarz: "Simulation of Random Dopant Fluctuations with a Quantum Corrected Drift Diffusion Model"; Supervisor: T. Grasser, M. Bina; Institut für Mikroelektronik, 2011, final examination: 2011-06-17. BibTeX
1.	M. Bina: "Simulation of Interface States Generated During Stress in MOSFETs"; Supervisor: T. Grasser; Institut für Mikroelektronik, 2010, final examination: 2010-04-23. BibTeX