Publications Walter Bohmayr
12 records
| 2. | W. Bohmayr, A. Burenkov, J. Lorenz, H. Ryssel, S. Selberherr: "Monte Carlo Simulation of Silicon Amorphization during Ion Implantation"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 17, (1998), 1236 - 1243 doi:10.1109/43.736563. BibTeX |
| 1. | W. Bohmayr, A. Burenkov, J. Lorenz, H. Ryssel, S. Selberherr: "Trajectory Split Method for Monte Carlo Simulation of Ion Implantation"; IEEE Transactions on Semiconductor Manufacturing, 8, (1995), 402 - 407 doi:10.1109/66.475181. BibTeX |
| 7. | W. Bohmayr, A. Burenkov, J. Lorenz, H. Ryssel, S. Selberherr: "Monte Carlo Simulation of Silicon Amorphization During Ion Implantation"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 1996-09-02 - 1996-09-04; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1996), ISBN: 0-7803-2745-4, 17 - 18 doi:10.1109/SISPAD.1996.865252. BibTeX |
| 6. | W. Bohmayr, S. Selberherr: "Investigation of Channeling in Field Oxide Corners by Three-Dimensional Monte Carlo Simulation of Ion Implantation"; Talk: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Peking; 1995-09-24 - 1995-09-28; in "Proceedings Solid-State and Integrated-Circuit Technology Conference", (1995), 304 - 306. BibTeX |
| 5. | W. Bohmayr, A. Burenkov, J. Lorenz, H. Ryssel, S. Selberherr: "Statistical Accuracy and CPU Time Characteristic of Three Trajectory Split Methods for Monte Carlo Simulation of Ion Implantation"; Talk: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Erlangen; 1995-09-06 - 1995-09-08; in "Proceedings SISDEP 95 Conference", (1995), ISBN: 3-211-82736-6, 492 - 495 doi:10.1007/978-3-7091-6619-2_119. BibTeX |
| 4. | A. Burenkov, W. Bohmayr, J. Lorenz, H. Ryssel, S. Selberherr: "Analytical Model for Phosphorus Large Angle Tilted Implantation"; Talk: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Erlangen; 1995-09-06 - 1995-09-08; in "Proceedings SISDEP 95 Conference", (1995), ISBN: 3-211-82736-6, 488 - 491 doi:10.1007/978-3-7091-6619-2_118. BibTeX |
| 3. | E. Leitner, W. Bohmayr, P. Fleischmann, E. Strasser, S. Selberherr: "3D TCAD at TU Vienna"; Talk: 3-Dimensional Process Simulation Workshop, Erlangen; (invited) 1995-09-05 in "Proceedings 3-Dimensional Process Simulation Workshop", (1995), ISBN: 3-211-82741-2, 136 - 161 doi:10.1007/978-3-7091-6905-6_7. BibTeX |
| 2. | W. Bohmayr, S. Selberherr: "Trajectory Split Method for Monte Carlo Simulation of Ion Implantation Demonstrated by Three-Dimensional Poly-Buffered LOCOS Field Oxide Corners"; Talk: VLSI Technology, Systems and Applications Symposium (VLSITSA), Taipei; 1995-05-31 - 1995-06-02; in "Proceedings VLSI Technology, Systems and Applications Symposium", (1995), ISBN: 0-7803-2773-x, 104 - 107. BibTeX |
| 1. | W. Bohmayr, S. Selberherr: "Effiziente Methoden für die Monte Carlo Simulation der Ionenimplantation in multidimensionale kristalline Halbleiterstrukturen"; Talk: Seminar Grundlagen und Technologie elektronischer Bauelemente, Grossarl; 1995-04-05 - 1995-04-08; in "Tagungsbericht Seminar Grundlagen und Technologie elektronischer Bauelemente", (1995), ISBN: 3-901578-01-3, 63 - 66. BibTeX |
| 1. | W. Bohmayr: "Simulation der Ionenimplantation in kristalline Siliziumstrukturen"; Reviewer: S. Selberherr, W. Fallmann; Institut für Mikroelektronik, 1996, oral examination: 1996-10-28. BibTeX |
| 2. | W. Bohmayr, F. Fasching, G. Rieger, S. Selberherr, T. Simlinger: "VISTA Status Report December 1994"; (1994), 26 page(s) . BibTeX |
| 1. | W. Bohmayr, S. Halama, C. Pichler, S. Selberherr, T. Simlinger, E. Strasser, W. Tuppa: "VISTA Status Report June 1994"; (1994), 25 page(s) . BibTeX |