Publications Walter Bohmayr

12 records

Publications in Scientific Journals

2.  W. Bohmayr, A. Burenkov, J. Lorenz, H. Ryssel, S. Selberherr:
"Monte Carlo Simulation of Silicon Amorphization during Ion Implantation";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 17 (1998), 12; 1236 - 1243. https://doi.org/10.1109/43.736563

1.  W. Bohmayr, A. Burenkov, J. Lorenz, H. Ryssel, S. Selberherr:
"Trajectory Split Method for Monte Carlo Simulation of Ion Implantation";
IEEE Transactions on Semiconductor Manufacturing, 8 (1995), 4; 402 - 407. https://doi.org/10.1109/66.475181

Talks and Poster Presentations (with Proceedings-Entry)

7.  W. Bohmayr, A. Burenkov, J. Lorenz, H. Ryssel, S. Selberherr:
"Monte Carlo Simulation of Silicon Amorphization During Ion Implantation";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1996), ISBN: 0-7803-2745-4; 17 - 18. https://doi.org/10.1109/SISPAD.1996.865252

6.  E. Leitner, W. Bohmayr, P. Fleischmann, E. Strasser, S. Selberherr:
"3D TCAD at TU Vienna";
Talk: 3-Dimensional Process Simulation Workshop, Erlangen (invited); 1995-09-05; in: "Proceedings 3-Dimensional Process Simulation Workshop", (1995), ISBN: 3-211-82741-2; 136 - 161. https://doi.org/10.1007/978-3-7091-6905-6_7

5.  A. Burenkov, W. Bohmayr, J. Lorenz, H. Ryssel, S. Selberherr:
"Analytical Model for Phosphorus Large Angle Tilted Implantation";
Talk: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Erlangen; 1995-09-06 - 1995-09-08; in: "Proceedings SISDEP 95 Conference", (1995), ISBN: 3-211-82736-6; 488 - 491. https://doi.org/10.1007/978-3-7091-6619-2_118

4.  W. Bohmayr, S. Selberherr:
"Effiziente Methoden für die Monte Carlo Simulation der Ionenimplantation in multidimensionale kristalline Halbleiterstrukturen";
Talk: Seminar Grundlagen und Technologie elektronischer Bauelemente, Grossarl; 1995-04-05 - 1995-04-08; in: "Tagungsbericht Seminar Grundlagen und Technologie elektronischer Bauelemente", (1995), ISBN: 3-901578-01-3; 63 - 66.

3.  W. Bohmayr, S. Selberherr:
"Investigation of Channeling in Field Oxide Corners by Three-Dimensional Monte Carlo Simulation of Ion Implantation";
Talk: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Peking; 1995-09-24 - 1995-09-28; in: "Proceedings Solid-State and Integrated-Circuit Technology Conference", (1995), 304 - 306.

2.  W. Bohmayr, A. Burenkov, J. Lorenz, H. Ryssel, S. Selberherr:
"Statistical Accuracy and CPU Time Characteristic of Three Trajectory Split Methods for Monte Carlo Simulation of Ion Implantation";
Talk: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Erlangen; 1995-09-06 - 1995-09-08; in: "Proceedings SISDEP 95 Conference", (1995), ISBN: 3-211-82736-6; 492 - 495. https://doi.org/10.1007/978-3-7091-6619-2_119

1.  W. Bohmayr, S. Selberherr:
"Trajectory Split Method for Monte Carlo Simulation of Ion Implantation Demonstrated by Three-Dimensional Poly-Buffered LOCOS Field Oxide Corners";
Talk: VLSI Technology, Systems and Applications Symposium (VLSITSA), Taipei; 1995-05-31 - 1995-06-02; in: "Proceedings VLSI Technology, Systems and Applications Symposium", (1995), ISBN: 0-7803-2773-x; 104 - 107.

Doctor's Theses (authored and supervised)

1.  W. Bohmayr:
"Simulation der Ionenimplantation in kristalline Siliziumstrukturen";
Supervisor, Reviewer: S. Selberherr, W. Fallmann; Institut für Mikroelektronik, 1996; oral examination: 1996-10-28.

Scientific Reports

2.  W. Bohmayr, F. Fasching, G. Rieger, S. Selberherr, T. Simlinger:
"VISTA Status Report December 1994";
1994; 26 pages.

1.  W. Bohmayr, S. Halama, C. Pichler, S. Selberherr, T. Simlinger, E. Strasser, W. Tuppa:
"VISTA Status Report June 1994";
1994; 25 pages.