Publications Hajdin Ceric
174 records
| 1. | H. Ceric, S. Selberherr: "Editorial Preface to the Special Section on Electromigration Published in March 2009"; IEEE Transactions on Device and Materials Reliability, 9, (2009), 103 doi:10.1109/TDMR.2009.2020086. BibTeX |
| 32. | H. Ceric, S. Selberherr, H. Zahedmanesh, R. Orio, K. Croes: "Review - Modeling Methods for Analysis of Electromigration Degradation in Nano-Interconnects"; ECS Journal Of Solid State Science And Technology, 10, (2021), 035003-1 - 035003-11 doi:10.1149/2162-8777/abe7a9. BibTeX |
| 31. | A. Saleh, H. Ceric, H. Zahedmanesh: "Void-Dynamics in Nano-Wires and the Role of Microstructure Investigated via a Multi-Scale Physics-Based Model"; Journal of Applied Physics, 129, (2021), 125102-1 - 125102-17 doi:10.1063/5.0039953. BibTeX |
| 30. | H. Ceric, H. Zahedmanesh, K. Croes: "Analysis of Electromigration Failure of Nano-Interconnects through a Combination of Modeling and Experimental Methods"; Microelectronics Reliability, 100-101, (2019), 113362 doi:10.1016/j.microrel.2019.06.054. BibTeX |
| 29. | A. Grill, B. Stampfer, K.-S. Im, J. Lee, C. Ostermaier, H. Ceric, M. Waltl, T. Grasser: "Electrostatic Coupling and Identification of Single-Defects in GaN/AlGaN Fin-MIS-HEMTs"; Solid-State Electronics, 19, (2019), 41 - 47 doi:10.1016/j.sse.2019.02.004. BibTeX |
| 28. | S. Papaleo, W. H. Zisser, A.P. Singulani, H. Ceric, S. Selberherr: "Stress Evolution During Nanoindentation in Open TSVs"; IEEE Transactions on Device and Materials Reliability, 16, (2016), 470 - 474 doi:10.1109/TDMR.2016.2622727. BibTeX |
| 27. | P. Sharma, S. E. Tyaginov, M. Jech, Y. Wimmer, F. Rudolf, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser: "The Role of Cold Carriers and the Multiple-Carrier Process of Si-H Bond Dissociation for Hot-Carrier Degradation in n- and p-channel LDMOS Devices"; Solid-State Electronics, 115, (2016), 185 - 191 doi:10.1016/j.sse.2015.08.014. BibTeX |
| 26. | R. Coppeta, D. Holec, H. Ceric, T. Grasser: "Evaluation of Dislocation Energy in Thin Films"; Philosophical Magazine, 95, (2015), 186 - 209 doi:10.1080/14786435.2014.994573. BibTeX |
| 25. | P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, K. Rupp, M. Bina, H. Enichlmair, J.M. Park, R. Minixhofer, H. Ceric, T. Grasser: "Modeling of Hot-Carrier Degradation in nLDMOS Devices: Different Approaches to the Solution of the Boltzmann Transport Equation"; IEEE Transactions on Electron Devices, 62, (2015), 1811 - 1818 doi:10.1109/TED.2015.2421282. BibTeX |
| 24. | P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, K. Rupp, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser: "Comparison of Analytic Distribution Function Models for Hot-Carrier Degradation in nLDMOSFETs"; Microelectronics Reliability, 55, (2015), 1427 - 1432 doi:10.1016/j.microrel.2015.06.021. BibTeX |
| 23. | H. Ceric, R. Orio, W. H. Zisser, S. Selberherr: "Microstructural Impact on Electromigration: A TCAD Study"; Facta universitatis - series: Electronics and Energetics, 27, (2014), 1 - 11 doi:10.2298/FUEE1401001C. BibTeX |
| 22. | W. H. Zisser, H. Ceric, J. Weinbub, S. Selberherr: "Electromigration Reliability of Open TSV Structures"; Microelectronics Reliability, 54, (2014), 2133 - 2137 doi:10.1016/j.microrel.2014.07.099. BibTeX |
| 21. | A. P. Singulani, H. Ceric, S. Selberherr: "Stress Evolution in the Metal Layers of TSVs with Bosch Scallops"; Microelectronics Reliability, 53, (2013), 1602 - 1605 doi:10.1016/j.microrel.2013.07.132. BibTeX |
| 20. | H. Ceric, R. Orio, S. Selberherr: "Interconnect Reliability Dependence on Fast Diffusivity Paths"; Microelectronics Reliability, 52, (invited) (2012), 1532 - 1538 doi:10.1016/j.microrel.2011.09.035. BibTeX |
| 19. | R. Orio, H. Ceric, S. Selberherr: "Electromigration Failure in a Copper Dual-Damascene Structure with a Through Silicon Via"; Microelectronics Reliability, 52, (2012), 1981 - 1986 doi:10.1016/j.microrel.2012.07.021. BibTeX |
| 18. | H. Ceric, S. Selberherr: "Electromigration in Submicron Interconnect Features of Integrated Circuits"; Materials Science and Engineering R-Reports, 71, (2011), 53 - 86 doi:10.1016/j.mser.2010.09.001. BibTeX |
| 17. | R. Orio, H. Ceric, S. Selberherr: "A Compact Model for Early Electromigration Failures of Copper Dual-Damascene Interconnects"; Microelectronics Reliability, 51, (2011), 1573 - 1577 doi:10.1016/j.microrel.2011.07.049. BibTeX |
| 16. | I. Starkov, S. E. Tyaginov, H. Enichlmair, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Ceric, T. Grasser: "Hot-Carrier Degradation Caused Interface State Profile-Simulation versus Experiment"; Journal of Vacuum Science & Technology B, 29, (2011), 01AB09-1 - 01AB09-8 doi:10.1116/1.3534021. BibTeX |
| 15. | I. Starkov, S. E. Tyaginov, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser: "Accurate Extraction of MOSFET Unstressed Interface State Spatial Distribution from Charge Pumping Measurements"; Solid State Phenomena, 178-179, (2011), 267 - 272 doi:10.4028/www.scientific.net/SSP.178-179.267. BibTeX |
| 14. | S. E. Tyaginov, I. Starkov, H. Enichlmair, C. Jungemann, J.M. Park, E. Seebacher, R. Orio, H. Ceric, T. Grasser: "An Analytical Approach for Physical Modeling of Hot-Carrier Induced Degradation"; Microelectronics Reliability, 51, (2011), 1525 - 1529 doi:10.1016/j.microrel.2011.07.089. BibTeX |
| 13. | R. Huang, W. Robl, H. Ceric, T. Detzel, G. Dehm: "Stress, Sheet Resistance, and Microstructure Evolution of Electroplated Cu Films During Self-Annealing"; IEEE Transactions on Device and Materials Reliability, 10, (2010), 47 - 54 doi:10.1109/TDMR.2009.2032768. BibTeX |
| 12. | R. Huang, A. Taylor, S. Himmelsbach, H. Ceric, T. Detzel: "Apparatus for Measuring Local Stress of Metallic Films, Using an Array of Parallel Laser Beams during Rapid Thermal Processing"; Measurement Science & Technology, 21, (2010), 55702 - 55710. BibTeX |
| 11. | R. Orio, H. Ceric, S. Selberherr: "Physically based Models of Electromigration: From Black´s Equation to Modern TCAD Models"; Microelectronics Reliability, 50, (invited) (2010), 775 - 789 doi:10.1016/j.microrel.2010.01.007. BibTeX |
| 10. | S. E. Tyaginov, I. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser: "Interface Traps Density-of-States as a Vital Component for Hot-Carrier Degradation Modeling"; Microelectronics Reliability, 50, (2010), 1267 - 1272 doi:10.1016/j.microrel.2010.0. BibTeX |
| 9. | H. Ceric, R. Orio, J. Cervenka, S. Selberherr: "A Comprehensive TCAD Approach for Assessing Electromigration Reliability of Modern Interconnects"; IEEE Transactions on Device and Materials Reliability, 9, (2009), 9 - 19 doi:10.1109/TDMR.2008.2000893. BibTeX |
| 8. | R. Orio, H. Ceric, S. Selberherr: "Analysis of Electromigration in Dual-Damascene Interconnect Structures"; Journal Integrated Circuits and Systems, 4, (2009), 67 - 72 doi:10.29292/jics.v4i2.300. BibTeX |
| 7. | J. Cervenka, H. Ceric, S. Selberherr: "Three-Dimensional Simulation of Sacrificial Etching"; Microsystem Technologies - Micro- and Nanosystems - Information Storage and Processing Systems, 14, (2008), 665 - 671 doi:10.1007/s00542-007-0491-1. BibTeX |
| 6. | R. Orio, H. Ceric, S. Selberherr: "Effect of Strains on Anisotropic Material Transport in Copper Interconnect Structures under Electromigration Stress"; Journal of Computational Electronics, 7, (2008), 128 - 131 doi:10.1007/s10825-008-0211-9. BibTeX |
| 5. | J. Cervenka, H. Ceric, S. Selberherr: "Three-Dimensional Simulation of Sacrificial Etching"; Proceedings of SPIE, 6589, (2007), 452 - 460 doi:10.1117/12.721979. BibTeX |
| 4. | M. Movahhedi, A. Abdipour, H. Ceric, A. Sheikholeslami, S. Selberherr: "Optimization of the Perfectly Matched Layer for the Finite-Element Time-Domain Method"; IEEE Microwave and Wireless Components Letters, 17, (2007), 10 - 12 doi:10.1109/LMWC.2006.887240. BibTeX |
| 3. | S. Holzer, Ch. Hollauer, H. Ceric, S. Wagner, E. Langer, T. Grasser, S. Selberherr: "Transient Electro-Thermal Investigations of Interconnect Structures Exposed to Mechanical Stress"; Proceedings of SPIE, 5837, (2005), 380 - 387 doi:10.1117/12.608414. BibTeX |
| 2. | H. Ceric, S. Selberherr: "An Adaptive Grid Approach for the Simulation of Electromigration Induced Void Migration"; IEICE Transactions on Electronics, E86-C, (invited) (2003), 421 - 426. BibTeX |
| 1. | H. Ceric, S. Selberherr: "Simulative Prediction of the Resistance Change due to Electromigration Induced Void Evolution"; Microelectronics Reliability, 42, (2002), 1457 - 1460 doi:10.1016/S0026-2714(02)00169-5. BibTeX |
| 2. | H. Ceric, R. Heinzl, Ch. Hollauer, T. Grasser, S. Selberherr: "Microstructure and Stress Aspects of Electromigration Modeling"; in "Stress-Induced Phenomena in Metallization", American Institute of Physics, Melville, 2006, ISBN: 0-7354-03104, 262 - 268. BibTeX |
| 1. | Ch. Hollauer, H. Ceric, S. Selberherr: "Three-Dimensional Simulation of Thermal Oxidation and the Influence of Stress"; in "Physics and Chemistry of SiO2 and the Si-SiO2 Interface-5, Vol. 1 No. 1", issued by H.Z. Massoud, J.H. Stathis, T. Hattori, D. Misra, I. Baumvol; ECS Transactions, Pennington, 2005, ISBN: 1-56677-430-6, 103 - 113 doi:10.1149/ma2005-02/19/734. BibTeX |
| 119. | H. Ceric, S. Selberherr, H. Zahedmanesh, R. Orio, K. Croes: "Assessment of Electromigration in Nano‐Interconnects"; Talk: International Conference on Reliability and Stress-Related Phenomena in Nanoelectronics (IRSP), San Jose, USA; (invited) 2019-11-04 - 2019-11-06; in "Abstracts of the International Conference on Reliability and Stress-Related Phenomena in Nanoelectronics (IRSP)", (2019), 7. BibTeX |
| 118. | H. Ceric, H. Zahedmanesh: "Advanced Modeling and Simulation of Cu Nano-Interconnects Reliability"; Poster: IEEE International Interconnect Technology Conference (IITC), Brussels, Belgium; 2019-06-03 - 2019-06-06; in "Proceedings of the International Interconnect Technology Conference (IITC)", (2019), . BibTeX |
| 117. | A. Grill, B. Stampfer, M. Waltl, K.-S. Im, J. Lee, C. Ostermaier, H. Ceric, T. Grasser: "Characterization and Modeling of Single Defects in GaN/AlGaN Fin-MIS-HEMTs"; Talk: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2017-04-02 - 2017-04-06; in "Proceedings of IEEE International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6641-4, 3B-5.1 - 3B-5.5 doi:10.1109/IRPS.2017.7936285. BibTeX |
| 116. | S. Papaleo, M. Rovitto, H. Ceric: "Mechanical Effects of the Volmer-Weber Growth in the TSV Sidewall"; Talk: IEEE Electronic Components and Technology Conference (ECTC), Las Vegas, NV, USA; 2016-05-31 - 2016-06-03; in "Proceedings of IEEE Electronic Components and Technology Conference (ECTC)", (2016), ISBN: 978-1-5090-1204-6, 1617 - 1622 doi:10.1109/ECTC.2016.19. BibTeX |
| 115. | M. Rovitto, H. Ceric: "Electromigration Induced Voiding and Resistance Change in Three-Dimensional Copper Through Silicon Vias"; Talk: IEEE Electronic Components and Technology Conference (ECTC), Las Vegas, NV, USA; 2016-05-31 - 2016-06-03; in "Proceedings of IEEE Electronic Components and Technology Conference (ECTC)", (2016), ISBN: 978-1-5090-1204-6, 550 - 556 doi:10.1109/ECTC.2016.49. BibTeX |
| 114. | H. Ceric, R. Orio, M. Rovitto: "TCAD Approach for the Assessment of Interconnect Reliability"; Talk: International Conference Reliability and Stress-Related Phenomena in Nanoelectronics - Experiment and Simulation (IRSP), Bad Schandau, Germany; (invited) 2016-05-30 - 2016-06-01; in "Abstracts of the International Conference Reliability and Stress-Related Phenomena in Nanoelectronics - Experiment and Simulation (IRSP)", (2016), T21. BibTeX |
| 113. | S. Papaleo, H. Ceric: "A Finite Element Method Study of Delamination at the Interface of the TSV Interconnects"; Poster: International Reliability Physics Symposium (IRPS), Pasadena, CA USA; 2016-04-17 - 2016-04-21; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2016), ISBN: 978-1-4673-9136-8, PA-2-1 - PA-2-4 doi:10.1109/IRPS.2016.7574626. BibTeX |
| 112. | A. Grill, G. Rzepa, P. Lagger, C. Ostermaier, H. Ceric, T. Grasser: "Charge Feedback Mechanisms at Forward Threshold Voltage Stress in GaN/AlGaN HEMTs"; Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2015-10-11 - 2015-10-15; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2015), ISBN: 978-1-4673-7395-1, 41 - 45 doi:10.1109/IIRW.2015.7437064. BibTeX |
| 111. | P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, K. Rupp, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser: "Comparison of Analytic Distribution Function Models for Hot-Carrier Degradation in nLDMOSFETs"; Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Toulouse, France; 2015-10-05 - 2015-10-09; in "Abstracts of the 26th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis", (2015), 60. BibTeX |
| 110. | H. Ceric, M. Rovitto: "Impact of Microstructure and Current Crowding on Electromigration: A TCAD Study"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 2015-09-09 - 2015-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7858-1, 194 - 197 doi:10.1109/SISPAD.2015.7292292. BibTeX |
| 109. | S. Papaleo, W. H. Zisser, H. Ceric: "Factors that Influence Delamination at the Bottom of Open TSVs"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 2015-09-09 - 2015-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7858-1, 421 - 424 doi:10.1109/SISPAD.2015.7292350. BibTeX |
| 108. | S. Papaleo, W. H. Zisser, H. Ceric: "Effects of the Initial Stress at the Bottom of Open TSVs"; Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Hsinchu, Taiwan; 2015-06-29 - 2015-07-02; in "Proceedings of the IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2015), . BibTeX |
| 107. | M. Rovitto, W. H. Zisser, H. Ceric: "Analysis of Electromigration Void Nucleation Failure Time in Open Copper TSVs"; Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Hsinchu, Taiwan; 2015-06-29 - 2015-07-02; in "Proceedings of the IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2015), . BibTeX |
| 106. | H. Ceric, S. Selberherr: "Compact Model for Solder Bump Electromigration Failure"; Poster: International Interconnect Technology and Materials for Advanced Metallization Conference (IITC/MAM), Grenoble, France; 2015-05-18 - 2015-05-21; in "Proceedings of the International Interconnect Technology and Materials for Advanced Metallization Conference (IITC/MAM)", (2015), ISBN: 978-1-4673-7355-5, 159 - 161 doi:10.1109/IITC-MAM.2015.7325651. BibTeX |
| 105. | P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, K. Rupp, M. Bina, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser: "Predictive and Efficient Modeling of Hot-Carrier Degradation in nLDMOS Devices"; Talk: IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), Hong Kong, China; 2015-05-10 - 2015-05-14; in "Proceedings of the IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)", (2015), ISBN: 978-1-4799-6259-4, 389 - 392 doi:10.1109/ISPSD.2015.7123471. BibTeX |
| 104. | M. Rovitto, W. H. Zisser, H. Ceric, T. Grasser: "Electromigration Modelling of Void Nucleation in Open Cu-TSVs"; Poster: International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), Budapest, Hungary; 2015-04-19 - 2015-04-22; in "Proceedings of the International Conference on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)", (2015), ISBN: 978-1-4799-9949-1, 5 page(s) doi:10.1109/EuroSimE.2015.7103100. BibTeX |
| 103. | P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser: "A Model for Hot-Carrier Degradation in nLDMOS Transistors Based on the Exact Solution of the Boltzmann Transport Equation Versus the Drift-Diffusion Scheme"; Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Bologna, Italy; 2015-01-26 - 2015-01-28; in "Proceedings of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2015), 21 - 24 doi:10.1109/ULIS.2015.7063763. BibTeX |
| 102. | H. Ceric, W. H. Zisser, S. Selberherr: "Quantum Mechanical Calculations of Electromigration Characteristics"; Talk: International Workshop on Stress-Induced Phenomena in Microelectronics, Austin, TX, USA; (invited) 2014-10-15 - 2014-10-17; in "Abstracts of 13th International Workshop on Stress-Induced Phenomena in Microelectronics", (2014), 16. BibTeX |
| 101. | S. Papaleo, W. H. Zisser, A. P. Singulani, H. Ceric, S. Selberherr: "Stress Evolution During the Nanoindentation in Open TSVs"; Poster: International Workshop on Stress-Induced Phenomena in Microelectronics, Austin, TX, USA; 2014-10-15 - 2014-10-17; in "Abstracts of 13th International Workshop on Stress-Induced Phenomena in Microelectronics", (2014), 44. BibTeX |
| 100. | W. H. Zisser, H. Ceric, S. Selberherr: "Void Evolution in Open TSVs"; Poster: International Workshop on Stress-Induced Phenomena in Microelectronics, Austin, TX, USA; 2014-10-15 - 2014-10-17; in "Abstracts of 13th International Workshop on Stress-Induced Phenomena in Microelectronics", (2014), 58. BibTeX |
| 99. | R. Orio, S. Gousseau, S. Moreau, H. Ceric, S. Selberherr, A. Farcy, F. Bay, K. Inal, P. Montmitonnet: "On the Material Depletion Rate Due to Electromigration in a Copper TSV Structure"; Poster: IEEE International Reliability Workshop (IIRW), Fallen Leaf Lake, CA, USA; 2014-10-12 - 2014-10-16; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2014), ISBN: 978-1-4799-7274-6, 111 - 114 doi:10.1109/IIRW.2014.7049523. BibTeX |
| 98. | S. E. Tyaginov, M. Bina, J. Franco, Y. Wimmer, F. Rudolf, H. Enichlmair, J.M. Park, B. Kaczer, H. Ceric, T. Grasser: "Dominant Mechanism of Hot-Carrier Degradation in Short- and Long-Channel Transistors"; Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2014-10-12 - 2014-10-16; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2014), ISBN: 978-1-4799-7308-8, 63 - 68 doi:10.1109/IIRW.2014.7049512. BibTeX |
| 97. | Y. Wimmer, S. E. Tyaginov, F. Rudolf, K. Rupp, M. Bina, H. Enichlmair, J.M. Park, R. Minixhofer, H. Ceric, T. Grasser: "Physical Modeling of Hot-Carrier Degradation in nLDMOS Transistors"; Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2014-10-12 - 2014-10-16; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2014), ISBN: 978-1-4799-7308-8, 58 - 62 doi:10.1109/IIRW.2014.7049511. BibTeX |
| 96. | W. H. Zisser, H. Ceric, J. Weinbub, S. Selberherr: "Electromigration Reliability of Open TSV Structures"; Poster: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Berlin, Germany; 2014-09-29 - 2014-10-02; in "Abstracts 25th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)", (2014), 48. BibTeX |
| 95. | H. Ceric, W. H. Zisser, M. Rovitto, S. Selberherr: "Electromigration in Solder Bumps: A Mean-Time-to-Failure TCAD Study"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 2014-09-09 - 2014-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 221 - 224 doi:10.1109/SISPAD.2014.6931603. BibTeX |
| 94. | W. H. Zisser, H. Ceric, J. Weinbub, S. Selberherr: "Electromigration Induced Resistance Increase in Open TSVs"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 2014-09-09 - 2014-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 249 - 252 doi:10.1109/SISPAD.2014.6931610. BibTeX |
| 93. | S. Papaleo, W. H. Zisser, A. P. Singulani, H. Ceric, S. Selberherr: "Stress Analysis in Open TSVs after Nanoindentation"; Talk: GDRI CNRS Mecano General Meeting on the Mechanics of Nano-objects, Thun, Switzerland; 2014-09-04 - 2014-09-05; in "Abstracts", (2014), 39 - 40. BibTeX |
| 92. | W. H. Zisser, H. Ceric, S. Selberherr: "Stress Development and Void Evolution in Open TSVs"; Talk: GDRI CNRS Mecano General Meeting on the Mechanics of Nano-objects, Thun, Switzerland; 2014-09-04 - 2014-09-05; in "Abstracts", (2014), 38 - 39. BibTeX |
| 91. | H. Ceric, S. Selberherr: "Electromigration Reliability of Solder Bumps"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, Singapore; 2014-06-30 - 2014-07-04; in "Proceedings of the 21st International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2014), ISBN: 978-1-4799-3931-2, 336 - 339 doi:10.1109/IPFA.2014.6898145. BibTeX |
| 90. | W. H. Zisser, H. Ceric, J. Weinbub, S. Selberherr: "Electromigration Reliability of Open TSV Structures"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, Singapore; 2014-06-30 - 2014-07-04; in "Proceedings of the 21st International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2014), ISBN: 978-1-4799-3931-2, 317 - 320 doi:10.1109/IPFA.2014.6898179. BibTeX |
| 89. | H. Ceric, S. Selberherr: "Electromigration Induced Failure of Solder Bumps and the Role of IMC"; Poster: IEEE International Interconnect Technology Conference (IITC), San Jose, USA; 2014-05-20 - 2014-05-23; in "Proceedings of the International Interconnect Technology Conference (IITC)", (2014), ISBN: 978-1-4799-5017-1, 265 - 267 doi:10.1109/IITC.2014.6831891. BibTeX |
| 88. | H. Ceric, R. Orio, A. P. Singulani, S. Selberherr: "3D Technology Interconnect Reliability TCAD"; Talk: Pan Pacific Microelectronics Symposium, Big Island of Hawaii, USA; 2014-02-11 - 2014-02-13; in "Proceedings of the 2014 Pan Pacific Microelectronics Symposium", (2014), ISBN: 978-0-9888873-3-6, 1 - 8. BibTeX |
| 87. | H. Ceric, A. P. Singulani, R. Orio, S. Selberherr: "Electromigration Enhanced Growth of Intermetallic Compound in Solder Bumps"; Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 2013-10-13 - 2013-10-17; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2013), ISBN: 978-1-4799-0350-4, 166 - 169 doi:10.1109/IIRW.2013.6804185. BibTeX |
| 86. | R. Coppeta, H. Ceric, D. Holec, T. Grasser: "Critical thickness for GaN thin film on AlN substrate"; Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 2013-10-13 - 2013-10-17; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2013), ISBN: 978-1-4799-0350-4, 133 - 136. BibTeX |
| 85. | W. H. Zisser, H. Ceric, R. Orio, S. Selberherr: "Electromigration Induced Stress in Open TSVs"; Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 2013-10-13 - 2013-10-17; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2013), ISBN: 978-1-4799-0350-4, 142 - 145 doi:10.1109/IIRW.2013.6804179. BibTeX |
| 84. | H. Ceric, A. P. Singulani, R. Orio, S. Selberherr: "Impact of Intermetallic Compound on Solder Bump Electromigration Reliability"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 2013-09-03 - 2013-09-05; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 73 - 76 doi:10.1109/SISPAD.2013.6650577. BibTeX |
| 83. | R. Coppeta, H. Ceric, B. Karunamurthy, T. Grasser: "Epitaxial Volmer-Weber Growth Modelling"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 2013-09-03 - 2013-09-05; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 45 - 48 doi:10.1109/SISPAD.2013.6650570. BibTeX |
| 82. | R. Orio, H. Ceric, S. Selberherr: "Influence of Temperature on the Standard Deviation of Electromigration Lifetimes"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 2013-09-03 - 2013-09-05; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 232 - 235 doi:10.1109/SISPAD.2013.6650617. BibTeX |
| 81. | A. P. Singulani, H. Ceric, S. Selberherr: "Stress Estimation in Open Tungsten TSV"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 2013-09-03 - 2013-09-05; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 65 - 68 doi:10.1109/SISPAD.2013.6650575. BibTeX |
| 80. | W. H. Zisser, H. Ceric, R. Orio, S. Selberherr: "Electromigration Analyses of Open TSVs"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 2013-09-03 - 2013-09-05; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 244 - 247 doi:10.1109/SISPAD.2013.6650620. BibTeX |
| 79. | H. Ceric, R. Orio, S. Selberherr: "Analysis of Solder Bump Electromigration Reliability"; Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou, China; 2013-07-15 - 2013-07-19; in "Proceedings of the 20th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2013), ISBN: 978-1-4799-0478-5, 713 - 716 doi:10.1109/IPFA.2013.6599258. BibTeX |
| 78. | A. P. Singulani, H. Ceric, E. Langer: "Stress Evolution on Tungsten Thin-Film of an Open Through Silicon Via Technology"; Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou, China; 2013-07-15 - 2013-07-19; in "Proceedings of the 20th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2013), ISBN: 978-1-4799-0478-5, 216 - 220 doi:10.1109/IPFA.2013.6599155. BibTeX |
| 77. | A. P. Singulani, H. Ceric, E. Langer: "Stress reduction induced by Bosch scallops on an open TSV technology"; Poster: IEEE International Interconnect Technology Conference (IITC), Kyoto, Japan; 2013-06-13 - 2013-06-15; in "Proceedings of the International Interconnect Techonology Conference (IITC)", (2013), ISBN: 978-1-4799-0438-9, 1 - 2 doi:10.1109/IITC.2013.6615578. BibTeX |
| 76. | A. P. Singulani, H. Ceric, L. Filipovic, E. Langer: "Impact of Bosch Scallops Dimensions on Stress of an Open Through Silicon Via Technology"; Talk: International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, Poland; 2013-04-14 - 2013-04-17; in "Proceedings of the IEEE 14th International Conference on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EurSimE)", (2013), ISBN: 978-1-4673-6137-8, 6 page(s) doi:10.1109/EuroSimE.2013.6529938. BibTeX |
| 75. | A. P. Singulani, H. Ceric, E. Langer, S. Carniello: "Effects of Bosch scallops on metal layer stress of an open Through Silicon Via technology"; Poster: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2013-04-14 - 2013-04-18; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2013), ISBN: 978-1-4799-0112-8, CP.2.1 - CP.2.5 doi:10.1109/IRPS.2013.6532066. BibTeX |
| 74. | A. P. Singulani, H. Ceric, S. Selberherr: "Thermo-mechanical Simulations of an Open Tungsten TSV"; Talk: IEEE Electronics Packaging Technology Conference (EPTC), Singapore; 2012-12-05 - 2012-12-07; in "Proceedings of the IEEE 14th Electronics Packaging Technology Conference (EPTC)", (2012), ISBN: 978-1-4673-4551-4, 110 - 114 doi:10.1109/EPTC.2012.6507061. BibTeX |
| 73. | R. Orio, H. Ceric, S. Selberherr: "Electromigration Failure in a Copper Dual-Damascene Structure with a Through Silicon Via"; Poster: 23rd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, Cagliari, Italy; 2012-10-01 - 2012-10-05; in "Proceedings of the 23rd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2012), 1981 - 1986. BibTeX |
| 72. | H. Ceric, R. Orio, S. Selberherr: "TCAD Study of Electromigration Failure Modes in Sn-Based Solder Bumps"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 2012-09-05 - 2012-09-07; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2, 264 - 267. BibTeX |
| 71. | R. Orio, H. Ceric, S. Selberherr: "Modeling of Electromigration Induced Resistance Change in Three-Dimensional Interconnects with Through Silicon Vias"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 2012-09-05 - 2012-09-07; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2, 268 - 271. BibTeX |
| 70. | R. Orio, H. Ceric, S. Selberherr: "Analysis of Resistance Change Development due to Voiding in Copper Interconnects ended by a Through Silicon Via"; Talk: International Symposium on Microelectronics Technology and Devices (SBMicro), Brasilia, Brazil; 2012-08-30 - 2012-09-02; in "ECS Transactions", (2012), 1, ISBN: 978-1-56677-990-6, 273 - 280 doi:10.1149/04901.0273ecst. BibTeX |
| 69. | H. Ceric, R. Orio, W. H. Zisser, S. Selberherr: "Ab Initio Method for Electromigration Analysis"; Talk: IEEE Electronics Packaging Technology Conference (EPTC), Singapore; 2012-07-02 - 2012-07-06; in "Proceedings of the 19th IEEE International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2012), ISBN: 978-1-4673-0982-0, 4 page(s) doi:10.1109/IPFA.2012.6306306. BibTeX |
| 68. | H. Ceric, R. Orio, S. Selberherr: "Atomistic Method for Analysis of Electromigration"; Poster: IEEE International Interconnect Technology Conference (IITC), San Jose, USA; 2012-06-04 - 2012-06-06; in "Proceedings of the IEEE International Interconnect Technology Conference", (2012), ISBN: 978-1-4673-1137-3, 3 page(s) . BibTeX |
| 67. | H. Ceric, R. Orio, W. H. Zisser, V. Schnitzer, S. Selberherr: "Modeling of Microstructural Effects on Electromigration Failure"; Talk: International Workshop on Stress-Induced Phenomena in Microelectronics, Kyoto, Japan; (invited) 2012-05-28 - 2012-05-30; in "Abstracts of 12th International Workshop on Stress-Induced Phenomena in Microelectronics", (2012), 50 - 51. BibTeX |
| 66. | I. Starkov, A. S. Starkov, S. E. Tyaginov, H. Enichlmair, H. Ceric, T. Grasser: "An Analytical Model for MOSFET Local Oxide Capacitance"; Talk: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 2011-12-07 - 2011-12-09; in "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3, 2 page(s) . BibTeX |
| 65. | S. E. Tyaginov, I. Starkov, H. Enichlmair, C. Jungemann, J.M. Park, E. Seebacher, R. Orio, H. Ceric, T. Grasser: "An Analytical Approach for Physical Modeling of Hot-Carrier Induced Degradation"; Talk: 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, Bordeaux, France; 2011-10-03 - 2011-10-07; in "Proceedings of the 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2011), 51, 1525 - 1529. BibTeX |
| 64. | I. Starkov, H. Ceric: "Impact of Interface State Density on MOSFET Local Oxide Capacitance Degradation During Hot-Carrier Stress"; Poster: International Conference on Solid State Devices and Materials, Nagoya, Japan; 2011-09-28 - 2011-09-30; in "Extended Abstracts of 2011 International Conference on Solid State Devices and Materials", (2011), 90 - 91. BibTeX |
| 63. | I. Starkov, S. E. Tyaginov, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser: "Accurate Extraction of MOSFET Interface State Spatial Distribution from Charge Pumping Measurements"; Talk: Gettering and Defect Engineering in Semiconductor Technology, Loipersdorf, Austria; 2011-09-25 - 2011-09-30; in "GADEST 2011: Abstract Booklet", (2011), 105 - 106. BibTeX |
| 62. | H. Ceric, R. Orio, F. Schanovsky, W. H. Zisser, S. Selberherr: "Multilevel Simulation for the Investigation of Fast Diffusivity Paths"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 135 - 138 doi:10.1109/SISPAD.2011.6035068. BibTeX |
| 61. | R. Orio, H. Ceric, S. Selberherr: "A Compact Model for Early Electromigration Lifetime Estimation"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 23 - 26 doi:10.1109/SISPAD.2011.6035040. BibTeX |
| 60. | I. Starkov, H. Ceric, S. E. Tyaginov, T. Grasser, H. Enichlmair, J.M. Park, C. Jungemann: "Analysis of Worst-Case Hot-Carrier Degradation Conditions in the Case of n- and p-channel High-Voltage MOSFETs"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 127 - 130 doi:10.1109/SISPAD.2011.6035066. BibTeX |
| 59. | S. E. Tyaginov, I. Starkov, O. Triebl, H. Ceric, T. Grasser, H. Enichlmair, J.M. Park, C. Jungemann: "Secondary Generated Holes as a Crucial Component for Modeling of HC Degradation in High-Voltage n-MOSFET"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 123 - 126 doi:10.1109/SISPAD.2011.6035065. BibTeX |
| 58. | R. Orio, H. Ceric, S. Selberherr: "Modeling Electromigration Lifetimes of Copper Interconnects"; Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Joao Pessoa, Brazil; 2011-08-30 - 2011-09-02; in "ECS Transactions", (2011), ISBN: 978-1-56677-900-5, 163 - 169 doi:10.1149/1.3615190. BibTeX |
| 57. | H. Ceric, R. Orio, S. Selberherr: "Integration of Atomistic and Continuum-Level Electromigration Models"; Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Incheon, South Korea; 2011-07-04 - 2011-07-07; in "IPFA 2011 Proceedings", (2011), ISBN: 978-1-4577-0159-7, 4 page(s) doi:10.1109/IPFA.2011.5992749. BibTeX |
| 56. | I. Starkov, H. Ceric, S. E. Tyaginov, T. Grasser: "Analysis of Worst-Case Hot-Carrier Conditions for n-type MOSFET"; Talk: 7th Conference on PhD Research in Microelectronics and Electronics (PRIME), Madonna di Campiglio, Italy; 2011-07-03 - 2011-07-07; in "Proceedings of the 7th Conference on PhD Research in Microelectronics and Electronics", (2011), ISBN: 978-1-4244-9136-0, 4 page(s) doi:10.1109/PRIME.2011.5966251. BibTeX |
| 55. | H. Ceric, R. Orio, S. Selberherr: "Interconnect Reliability Dependence on Fast Diffusivity Paths"; Talk: International Conference on Materials for Advanced Technologies (ICMAT), Suntec, Singapore; (invited) 2011-06-26 - 2011-07-01; in "Proceedings of the International Conference on Materials for Advanced Technologies (ICMAT 2011)", (2011), 33. BibTeX |
| 54. | L. Filipovic, H. Ceric, J. Cervenka, S. Selberherr: "A Simulator for Local Anodic Oxidation of Silicon Surfaces"; Talk: IEEE Canadian Conference on Electrical and Computer Engineering (CCECE), Niagara Falls, Canada; 2011-05-08 - 2011-05-11; in "Proceedings of the 24th Canadian Conference on Electrical and Computer Engineering (CCECE 2011)", (2011), ISBN: 978-1-4244-9789-8, 695 - 698 doi:10.1109/CCECE.2011.6030543. BibTeX |
| 53. | S. E. Tyaginov, I. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser: "Interface Traps Density-of-States as a Vital Component for Hot-Carrier Degradation Modeling"; Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Montecassino Abbey and Gaeta; 2010-10-11 - 2010-10-15; in "Proceedings of the 21st European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2010), 3 page(s) . BibTeX |
| 52. | H. Ceric, R. Orio, S. Selberherr: "Impact of Parameter Variability on Electromigration Lifetime Distribution"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Bologna, Italy; 2010-09-06 - 2010-09-08; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2010), ISBN: 978-1-4244-7699-2, 217 - 220 doi:10.1109/SISPAD.2010.5604523. BibTeX |
| 51. | H. Ceric, R. Orio, S. Selberherr: "Electromigration Anisotropy and Mechanical Stress in Modern Copper Interconnect"; Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2010-07-05 - 2010-07-09; in "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9, 167 - 170. BibTeX |
| 50. | R. Huang, W. Robl, G. Dehm, H. Ceric, T. Detzel: "Disparate Tendency of Stress Evolution of Thin and Thick Electroplated Cu Films at Room Temperature"; Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2010-07-05 - 2010-07-09; in "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9, 1 - 6. BibTeX |
| 49. | I. Starkov, S. E. Tyaginov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser: "Analysis of Worst-Case Hot-Carrier Conditions for High Voltage Transistors Based on Full-Band Monte-Carlo Simulations"; Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2010-07-05 - 2010-07-09; in "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9, 139 - 144. BibTeX |
| 48. | S. E. Tyaginov, I. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser: "Hot-Carrier Degradation Modeling Using Full-Band Monte-Carlo Simulations"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2010-07-05 - 2010-07-09; in "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9, 341 - 345. BibTeX |
| 47. | I. Starkov, S. E. Tyaginov, H. Enichlmair, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Ceric, T. Grasser: "HC Degradation Model: Interface State Profile-Simulations vs. Experiment"; Poster: Workshop on Dielectrics in Microelectronics (WODIM), Bratislava; 2010-06-28 - 2010-06-30; in "Book of Abstracts", (2010), 128. BibTeX |
| 46. | R. Huang, W. Robl, T. Detzel, H. Ceric: "Modeling of Stress Evolution of Electroplated Cu Films during Self-annealing"; Poster: IEEE International Reliability Physics Symposium, Anaheim, USA; 2010-05-02 - 2010-05-06; in "Proceedings of the IEEE International Reliability Physics Symposium", (2010), ISBN: 978-1-4244-5431-0, 911 - 917. BibTeX |
| 45. | R. Orio, H. Ceric, J. Cervenka, S. Selberherr: "Electromigration Failure Development in Modern Dual-Damascene Interconnects"; Talk: International Conference on Very Large Scale Integration (VLSI-SoC), Florianopolis; 2009-10-12 - 2009-10-14; in "Proceedings of the International Conference on Very Large Scale Integration (VLSI-SoC)", (2009), 15, ISBN: 978-3-90188-237-1, 5 page(s) . BibTeX |
| 44. | H. Ceric, R. Orio, J. Cervenka, S. Selberherr: "Copper Microstructure Impact on Evolution of Electromigration Induced Voids"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego, CA, USA; 2009-09-09 - 2009-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2009), ISBN: 978-1-4244-3947-8, 178 - 181 doi:10.1109/SISPAD.2009.5290222. BibTeX |
| 43. | R. Orio, H. Ceric, J. Cervenka, S. Selberherr: "The Effect of Copper Grain Size Statistics on the Electromigration Lifetime Distribution"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego, CA, USA; 2009-09-09 - 2009-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2009), ISBN: 978-1-4244-3947-8, 182 - 185 doi:10.1109/SISPAD.2009.5290219. BibTeX |
| 42. | R. Orio, H. Ceric, J. Cervenka, S. Selberherr: "The Effect of Microstructure on Electromigration-Induced Failure Development"; Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Natal; 2009-08-31 - 2009-09-03; in "ECS Transactions", (2009), ISBN: 978-1-56677-737-7, 345 - 352. BibTeX |
| 41. | H. Ceric, R. Orio, J. Cervenka, S. Selberherr: "The Effect of Microstructure on Electromigration Induced Voids"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou; 2009-07-06 - 2009-07-10; in "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2009), ISBN: 9781-4244-3912-6, 694 - 697. BibTeX |
| 40. | R. Orio, H. Ceric, J. Cervenka, S. Selberherr: "The Effect of Microstructure on the Electromigration Lifetime Distribution"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou; 2009-07-06 - 2009-07-10; in "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA2009)", (2009), 731 - 734. BibTeX |
| 39. | H. Ceric, R. Orio, J. Cervenka, S. Selberherr: "Stress-Induced Anisotropy of Electromigration in Copper Interconnects"; Talk: International Workshop on Stress-Induced Phenomena in Metallization, Austin; 2008-11-05 - 2008-11-07; in "Proceedings of the Stress-Induced Phenomena in Metallization: 10th International Workshop", (2008), ISBN: 978-0-7354-0680-3, 56 - 62. BibTeX |
| 38. | H. Ceric, R. Orio, J. Cervenka, S. Selberherr: "Analysis of Microstructure Impact on Electromigration"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 2008-09-09 - 2008-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7, 241 - 244 doi:10.1109/SISPAD.2008.4648282. BibTeX |
| 37. | R. Orio, H. Ceric, S. Carniello, S. Selberherr: "Analysis of Electromigration in Redundant Vias"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 2008-09-09 - 2008-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7, 237 - 240 doi:10.1109/SISPAD.2008.4648281. BibTeX |
| 36. | R. Orio, S. Carniello, H. Ceric, S. Selberherr: "Analysis of Electromigration in Dual-Damascene Interconnect Structures"; Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Gramado; 2008-09-01 - 2008-09-04; in "ECS Transactions", (2008), ISBN: 978-1-56677-646-2, 337 - 348. BibTeX |
| 35. | H. Ceric, R. Orio, J. Cervenka, S. Selberherr: "TCAD Solutions for Submicron Copper Interconnect"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2008-07-07 - 2008-07-11; in "Proceedings 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2008), ISBN: 978-1-4244-2039-1, 78 - 81. BibTeX |
| 34. | H. Ceric, R. Orio, S. Selberherr: "Comprehensive Modeling of Electromigration Induced Interconnect Degradation Mechanisms"; Talk: International Conference on Microelectronics (MIEL), Nis; (invited) 2008-05-11 - 2008-05-14; in "Proceedings 26th International Conference on Microelectronics", (2008), ISBN: 978-1-4244-1881-7, 69 - 76. BibTeX |
| 33. | R. Orio, H. Ceric, S. Selberherr: "Strain-Induced Anisotropy of Electromigration in Copper Interconnect"; Talk: International Semiconductor Device Research Symposium (ISDRS), Maryland; 2007-12-12 - 2007-12-14; in "2007 International Semiconductor Device Research Symposium", (2007), ISBN: 978-1-4244-1892-3, 2 page(s) . BibTeX |
| 32. | R. Orio, H. Ceric, S. Selberherr: "Effect of Strains on Anisotropic Material Transport in Copper Interconnect Structures under Electromigration Stress"; Poster: International Workshop on Computational Electronics (IWCE), Amherst, MA, USA; 2007-10-08 - 2007-10-10; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2007), 62 - 63. BibTeX |
| 31. | H. Ceric, A. Nentchev, E. Langer, S. Selberherr: "Intrinsic Stress Build-Up During Volmer-Weber Crystal Growth"; Talk: T. Grasser, S. Selberherr (ed); International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 2007-09-25 - 2007-09-27; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2007), 12, ISBN: 978-3-211-72860-4, 37 - 40 doi:10.1007/978-3-211-72861-1_9. BibTeX |
| 30. | J. Cervenka, H. Ceric, O. Ertl, S. Selberherr: "Three-Dimensional Sacrificial Etching"; Poster: T. Grasser, S. Selberherr (ed); International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 2007-09-25 - 2007-09-27; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2007), 12, ISBN: 978-3-211-72860-4, 433 - 436 doi:10.1007/978-3-211-72861-1_105. BibTeX |
| 29. | H. Ceric, S. Selberherr: "Electromigration Modeling for Interconnect Structures in Microelectronics"; Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Rio de Janeiro; (invited) 2007-09-03 - 2007-09-06; in "ECS Transactions", (2007), ISBN: 978-1-56677-565-6, 295 - 304. BibTeX |
| 28. | H. Ceric, S. Selberherr: "Electromigration in Interconnect Structures of Microelectronic Circuits"; Talk: Microelectroncs, Electronics, and Electronic Technologies (MIPRO), Opatija; (invited) 2007-05-21 - 2007-05-25; in "Microelectronics, Electronics, and Electronic Technologies (MEET)", (2007), ISBN: 978-953-233-032-8, 23 - 28. BibTeX |
| 27. | H. Ceric, E. Langer, S. Selberherr: "Modeling of Residual Stresses in Thin Metal Films"; Poster: International Workshop on Stress-Induced Phenomena in Metallization, Kyoto, Japan; 2007-04-04 - 2007-04-06; in "9th International Workshop on Stress-Induced Phenomena in Metallization", (2007), 18. BibTeX |
| 26. | H. Ceric, E. Langer, S. Selberherr: "Three-Phase Model for the Volmer-Weber Crystal Growth"; Talk: Nanostructures and Carrier Interactions (NNCI), Atsugi, Japan; 2007-02-20 - 2007-02-23; in "Nanostructures and Carrier Interactions", (2007), 127. BibTeX |
| 25. | Ch. Hollauer, H. Ceric, G. van Barel, A. Witvrouw, S. Selberherr: "Investigation of Intrinsic Stress Effects in Cantilever Structures"; Talk: IEEE Nano/Micro Engineered and Molecular Systems, Bangkok, Thailand; 2007-01-16 - 2007-01-19; in "Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems (CD ROM)", (2007), ISBN: 1-4244-0610-2, 4 page(s) . BibTeX |
| 24. | Ch. Hollauer, H. Ceric, S. Selberherr: "Modeling of Intrinsic Stress Effects in Deposited Thin Films"; Talk: EUROSENSORS XX, Göteborg; 2006-09-17 - 2006-09-20; in "Eurosensors 20th Anniversary Vol. 1", (2006), ISBN: 91-631-9280-2, 324 - 325. BibTeX |
| 23. | M. Movahhedi, A. Nentchev, H. Ceric, A. Abdipour, S. Selberherr: "A Finite Element Time-Domain Algorithm Based on the Alternating-Direction Implicit Method"; Talk: European Microwave Week (EUMW), Manchester; 2006-09-10 - 2006-09-15; in "European Microwave Week 2006 Book of Abstracts", (2006), ISBN: 2-9600551-6-0, 1 - 4. BibTeX |
| 22. | H. Ceric, Ch. Hollauer, S. Selberherr: "Three-Dimensional Simulation of Intrinsic Stress Build-Up in Thin Films"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 2006-09-06 - 2006-09-08; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5, 192 - 195 doi:10.1109/SISPAD.2006.282869. BibTeX |
| 21. | H. Ceric, J. Cervenka, E. Langer, S. Selberherr: "Moving Boundary Applications in Process and Interconnect TCAD"; Talk: Mini-Workshop on Anisotropic Motion Laws, Oberwolfach; 2006-08-13 - 2006-08-19; in "Proceedings Mini-Workshop on Anisotropic Motion Laws", (2006), Report No.38/2006, 13 - 16. BibTeX |
| 20. | H. Ceric, Ch. Hollauer, S. Selberherr: "Simulation of Texture Development Caused Stress Build-Up in Electroplated Copper Lines"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2006-07-03 - 2006-07-07; in "Proceedings 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2006), ISBN: 1-4244-0206-9, 359 - 363. BibTeX |
| 19. | S. Holzer, Ch. Hollauer, H. Ceric, M. Karner, T. Grasser, E. Langer, S. Selberherr: "Three-Dimensional Transient Interconnect Analysis With Regard to Mechanical Stress"; Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2006-07-03 - 2006-07-07; in "Proceedings 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2006), ISBN: 1-4244-0206-9, 154 - 157. BibTeX |
| 18. | R. Wittmann, H. Puchner, H. Ceric, S. Selberherr: "Impact of Random Bit Values on NBTI Lifetime of an SRAM Cell"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2006-07-03 - 2006-07-07; in "Proceedings 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2006), ISBN: 1-4244-0206-9, 41 - 44. BibTeX |
| 17. | R. Wittmann, H. Puchner, L. Hinh, H. Ceric, A. Gehring, S. Selberherr: "Impact of NBTI-driven Parameter Degradation on Lifetime of a 90nm p-MOSFET"; Poster: IEEE International Reliability Workshop (IIRW), S. Lake Tahoe; 2005-10-17 - 2005-10-20; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2005), ISBN: 0-7803-8992-1, 99 - 102. BibTeX |
| 16. | Ch. Hollauer, H. Ceric, S. Selberherr: "Three-Dimensional Simulation of Thermal Oxidation and the Influence of Stress"; Talk: Meeting of the Electrochemical Society, Physics and Chemistry of SiO2 and the Si-SiO2 Interface, Los Angeles; 2005-10-16 - 2005-10-21; in "208th ECS Meeting", (2005), ISSN: 1091-8213, 1 page(s) . BibTeX |
| 15. | H. Ceric, Ch. Hollauer, S. Selberherr: "Microstructure and Stress Aspects of Electromigration Modeling"; Poster: International Workshop on Stress-Induced Phenomena in Metallization, Dresden; 2005-09-12 - 2005-09-14; in "8th International Workshop on Stress-Induced Phenomena in Metallization", (2005), P 17. BibTeX |
| 14. | Ch. Hollauer, H. Ceric, S. Selberherr: "Three-Dimensional Simulation of Stress Dependent Thermal Oxidation"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 2005-09-01 - 2005-09-03; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5, 183 - 186 doi:10.1109/SISPAD.2005.201503. BibTeX |
| 13. | W. Wessner, H. Ceric, J. Cervenka, S. Selberherr: "Dynamic Mesh Adaptation for Three-Dimensional Electromigration Simulation"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 2005-09-01 - 2005-09-03; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5, 147 - 150 doi:10.1109/SISPAD.2005.201494. BibTeX |
| 12. | H. Ceric, V. Deshpande, Ch. Hollauer, S. Holzer, T. Grasser, S. Selberherr: "Comprehensive Analysis of Vacancy Dynamics Due to Electromigration"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2005-06-27 - 2005-07-01; in "Proceedings of the 12th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2005), ISBN: 0-7803-9301-5, 100 - 103. BibTeX |
| 11. | Ch. Hollauer, S. Holzer, H. Ceric, S. Wagner, T. Grasser, S. Selberherr: "Investigation of Thermo-Mechanical Stress in Modern Interconnect Layouts"; Talk: International Congress on Thermal Stresses (TS), Wien; 2005-05-26 - 2005-05-29; in "Proceedings of The Sixth International Congress on Thermal Stresses", (2005), Vol. 2, ISBN: 3-901167-12-9, 637 - 640. BibTeX |
| 10. | S. Holzer, Ch. Hollauer, H. Ceric, S. Wagner, R. Entner, E. Langer, T. Grasser, S. Selberherr: "Three-Dimensional Transient Electro-Thermal Interconnect Simulation for Stress and Electromigration Analysis"; Poster: The Nanotechnology Conference and Trade Show, Anaheim; 2005-05-08 - 2005-05-12; in "NSTI Nanotech Technical Proceedings", (2005), Vol. 3 (CDROM ISBN: 0-9767985-4-9), ISBN: 0-9767985-2-2, 620 - 623. BibTeX |
| 9. | R. Wittmann, H. Puchner, L. Hinh, H. Ceric, A. Gehring, S. Selberherr: "Simulation of Dynamic NBTI Degradation for a 90 nm CMOS Technology"; Talk: The Nanotechnology Conference and Trade Show, Anaheim; 2005-05-08 - 2005-05-12; in "NSTI Nanotech Technical Proceedings", (2005), Vol. 3 (CDROM ISBN 0-9767985-4-9), ISBN: 0-9767985-2-2, 29 - 32. BibTeX |
| 8. | H. Ceric, R. Sabelka, S. Holzer, W. Wessner, S. Wagner, T. Grasser, S. Selberherr: "The Evolution of the Resistance and Current Density During Electromigration"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 2004-09-02 - 2004-09-04; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2004), ISBN: 3211224688, 331 - 334 doi:10.1007/978-3-7091-0624-2_78. BibTeX |
| 7. | W. Wessner, H. Ceric, C. Heitzinger, A. Hössinger, S. Selberherr: "Anisotropic Mesh Adaption Governed by a Hessian Matrix Metric"; Talk: European Simulation Symposium (ESS), Delft; 2003-10-26 - 2003-10-29; in "Simulation in Industry, 15th European Simulation Symposium", (2003), ISBN: 3-936150-28-1, 41 - 46. BibTeX |
| 6. | Ch. Hollauer, H. Ceric, S. Selberherr: "Simulation of Thermal Oxidation: A Three-Dimensional Finite Element Approach"; Talk: European Solid-State Device Research Conference (ESSDERC), Estoril; 2003-09-16 - 2003-09-18; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2003), ISBN: 0-7803-7999-3, 383 - 386. BibTeX |
| 5. | Ch. Hollauer, H. Ceric, S. Selberherr: "Three-Dimensional Modeling of Thermal Oxidation of Silicon by Means of the Finite Element Method"; Talk: Industrial Simulation Conference (ISC), Valencia; 2003-06-09 - 2003-06-11; in "Industrial Simulation Conference 2003", (2003), ISBN: 90-77381-03-1, 154 - 158. BibTeX |
| 4. | H. Ceric, A. Hössinger, T. Binder, S. Selberherr: "Modeling of Segregation on Material Interfaces by Means of the Finite Element Method"; Talk: International Symposium on Mathematical Modeling (MATHMOD), Wien; 2003-02-05 - 2003-02-07; in "4th IMACS Symposium on Mathematical Modelling", (2003), ISBN: 3-901608-24-9, 139 - 145. BibTeX |
| 3. | T. Binder, H. Ceric, A. Hössinger, S. Selberherr: "A Strategy to Enforce the Discrete Minimax Principle on Finite Element Meshes"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 2002-09-04 - 2002-09-06; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5, 183 - 186 doi:10.1109/SISPAD.2002.1034547. BibTeX |
| 2. | H. Ceric, S. Selberherr: "An Adaptive Grid Approach for the Simulation of Electromigration Induced Void Migration"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 2002-09-04 - 2002-09-06; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5, 253 - 256 doi:10.1109/SISPAD.2002.1034566. BibTeX |
| 1. | H. Ceric, S. Selberherr: "Electromigration Induced Evolution of Voids in Current Crowding Areas of Interconnects"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2002-07-08 - 2002-07-12; in "Proceedings of the 13th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis", (2002), ISBN: 0-7803-7416-9, 140 - 144. BibTeX |
| 8. | H. Ceric, H. Zahedmanesh, K. Croes: "Analysis of Electromigration Failure of Nano-Interconnects through a Combination of Modeling and Experimental Methods"; Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Toulouse, France; 2019-09-23 - 2019-09-26; . BibTeX |
| 7. | A. P. Singulani, H. Ceric, S. Selberherr: "Stress Evolution in the Metal Layers of TSVs with Bosch Scallops"; Poster: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Arcachon, France; 2013-09-30 - 2013-10-04; . BibTeX |
| 6. | R. Orio, H. Ceric, S. Selberherr: "A Compact Model for Early Electromigration Failures of Copper Dual-Damascene Interconnects"; Talk: 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, Bordeaux, France; 2011-10-03 - 2011-10-07; . BibTeX |
| 5. | K. Rupp, H. Ceric: "Analytical and Numerical Investigation of the Segregation Problem"; Talk: 4th International Conference Computational Methods in Applied Mathematics: CMAM-4, Bedlewo; 2010-06-20 - 2010-06-26; . BibTeX |
| 4. | J. Cervenka, H. Ceric, S. Selberherr: "Three-Dimensional Simulation of Sacrificial Etching"; Talk: SPIE Smart Sensors, Actuators, and MEMS, Masapalomas, Spain; 2007-05-02 - 2007-05-04; . BibTeX |
| 3. | S. Holzer, Ch. Hollauer, H. Ceric, S. Wagner, E. Langer, T. Grasser, S. Selberherr: "Transient Electro-Thermal Investigations of Interconnect Structures Exposed to Mechanical Stress"; Talk: SPIE VLSI Circuits and Systems, Sevilla, Spain; 2005-05-09 - 2005-05-11; . BibTeX |
| 2. | W. Wessner, H. Ceric, Ch. Hollauer, E. Langer, S. Selberherr: "Electromigration Reliability TCAD Solutions"; Talk: SEMICON Europa2005, München; (invited) 2005-04-12 - 2005-04-14; . BibTeX |
| 1. | H. Ceric, S. Selberherr: "Simulative Prediction of the Resistance Change due to Electromigration Induced Void Evolution"; Poster: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Rimini; 2002-10-07 - 2002-10-11; . BibTeX |
| 1. | H. Ceric: "Reliability of Interconnect Structures for Modern Integrated Circuits"; TU Wien, Fakultät für Elektrotechnik und Informationstechnik, (2014), . BibTeX |
| 3. | S. Papaleo: "Mechanical Reliability of Open Through Silicon Via Structures for Integrated Circuits"; Reviewer: H. Ceric, O. Thomas; Institut für Mikroelektronik, 2016, oral examination: 2016-12-19. BibTeX |
| 2. | M. Rovitto: "Electromigration Reliability Issue in Interconnects for Three-Dimensional Integration Technologies"; Reviewer: H. Ceric, K. Weide-Zaage; Institut für Mikroelektronik, 2016, oral examination: 2016-12-13. BibTeX |
| 1. | H. Ceric: "Numerical Techniques in Modern TCAD"; Reviewer: S. Selberherr, H. Haas; Institut für Mikroelektronik, 2005, oral examination: 2005-04-29. BibTeX |
| 2. | W. H. Zisser: "Untersuchung an Kupferkristallen unter Zuhilfenahme von MD Simulationen"; Supervisor: E. Langer, H. Ceric; Institut für Mikroelektronik, 2011, final examination: 2011-10-12. BibTeX |
| 1. | H. Ceric: "Analyse von WDM-LAN Zugriffsprotokollen unter Zuhilfenahme von Semi-Markov-Modellen"; Supervisor: K. Bengi, H.R. van As; E 388, 2000, . BibTeX |
| 6. | H. Ceric, Ph. Hehenberger, G. Milovanovic, V. Sverdlov, M. Vasicek, S. Selberherr: "VISTA Status Report I"; (2009), 30 page(s) . BibTeX |
| 5. | H. Ceric, T. Grasser, R. Orio, M. Pourfath, M. Vasicek, S. Selberherr: "VISTA Status Report I"; (2008), 38 page(s) . BibTeX |
| 4. | H. Ceric, S. Dhar, G. Karlowatz, L. Li, M. Pourfath, S. Selberherr: "VISTA Status Report I"; (2007), 29 page(s) . BibTeX |
| 3. | H. Ceric, M. Karner, A. Nentchev, P. Schwaha, E. Ungersböck, S. Selberherr: "VISTA Status Report II"; (2005), 29 page(s) . BibTeX |
| 2. | H. Ceric, S. Holzer, A. Sheikholeslami, T. Ayalew, R. Wittmann, S. Selberherr: "VISTA Status Report I"; (2004), 28 page(s) . BibTeX |
| 1. | H. Ceric, K. Dragosits, A. Gehring, S. Smirnov, V. Palankovski, S. Selberherr: "VISTA Status Report II"; (2002), 35 page(s) . BibTeX |