Staff Person Publications

Publications Hajdin Ceric

175 records

Books and Editorships

1.	H. Ceric, S. Selberherr: "Editorial Preface to the Special Section on Electromigration Published in March 2009"; IEEE Transactions on Device and Materials Reliability, 9, (2009), 103 doi:10.1109/TDMR.2009.2020086. BibTeX

Publications in Scientific Journals

32.	H. Ceric, S. Selberherr, H. Zahedmanesh, R. Orio, K. Croes: "Review - Modeling Methods for Analysis of Electromigration Degradation in Nano-Interconnects"; ECS Journal Of Solid State Science And Technology, 10, (2021), 035003-1 - 035003-11 doi:10.1149/2162-8777/abe7a9. BibTeX
31.	A. Saleh, H. Ceric, H. Zahedmanesh: "Void-Dynamics in Nano-Wires and the Role of Microstructure Investigated via a Multi-Scale Physics-Based Model"; Journal of Applied Physics, 129, (2021), 125102-1 - 125102-17 doi:10.1063/5.0039953. BibTeX
30.	H. Ceric, H. Zahedmanesh, K. Croes: "Analysis of Electromigration Failure of Nano-Interconnects through a Combination of Modeling and Experimental Methods"; Microelectronics Reliability, 100-101, (2019), 113362 doi:10.1016/j.microrel.2019.06.054. BibTeX
29.	A. Grill, B. Stampfer, K.-S. Im, J. Lee, C. Ostermaier, H. Ceric, M. Waltl, T. Grasser: "Electrostatic Coupling and Identification of Single-Defects in GaN/AlGaN Fin-MIS-HEMTs"; Solid-State Electronics, 19, (2019), 41 - 47 doi:10.1016/j.sse.2019.02.004. BibTeX
28.	S. Papaleo, W. H. Zisser, A.P. Singulani, H. Ceric, S. Selberherr: "Stress Evolution During Nanoindentation in Open TSVs"; IEEE Transactions on Device and Materials Reliability, 16, (2016), 470 - 474 doi:10.1109/TDMR.2016.2622727. BibTeX
27.	P. Sharma, S. E. Tyaginov, M. Jech, Y. Wimmer, F. Rudolf, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser: "The Role of Cold Carriers and the Multiple-Carrier Process of Si-H Bond Dissociation for Hot-Carrier Degradation in n- and p-channel LDMOS Devices"; Solid-State Electronics, 115, (2016), 185 - 191 doi:10.1016/j.sse.2015.08.014. BibTeX
26.	R. Coppeta, D. Holec, H. Ceric, T. Grasser: "Evaluation of Dislocation Energy in Thin Films"; Philosophical Magazine, 95, (2015), 186 - 209 doi:10.1080/14786435.2014.994573. BibTeX
25.	P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, K. Rupp, M. Bina, H. Enichlmair, J.M. Park, R. Minixhofer, H. Ceric, T. Grasser: "Modeling of Hot-Carrier Degradation in nLDMOS Devices: Different Approaches to the Solution of the Boltzmann Transport Equation"; IEEE Transactions on Electron Devices, 62, (2015), 1811 - 1818 doi:10.1109/TED.2015.2421282. BibTeX
24.	P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, K. Rupp, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser: "Comparison of Analytic Distribution Function Models for Hot-Carrier Degradation in nLDMOSFETs"; Microelectronics Reliability, 55, (2015), 1427 - 1432 doi:10.1016/j.microrel.2015.06.021. BibTeX
23.	H. Ceric, R. Orio, W. H. Zisser, S. Selberherr: "Microstructural Impact on Electromigration: A TCAD Study"; Facta universitatis - series: Electronics and Energetics, 27, (2014), 1 - 11 doi:10.2298/FUEE1401001C. BibTeX
22.	W. H. Zisser, H. Ceric, J. Weinbub, S. Selberherr: "Electromigration Reliability of Open TSV Structures"; Microelectronics Reliability, 54, (2014), 2133 - 2137 doi:10.1016/j.microrel.2014.07.099. BibTeX
21.	A. P. Singulani, H. Ceric, S. Selberherr: "Stress Evolution in the Metal Layers of TSVs with Bosch Scallops"; Microelectronics Reliability, 53, (2013), 1602 - 1605 doi:10.1016/j.microrel.2013.07.132. BibTeX
20.	H. Ceric, R. Orio, S. Selberherr: "Interconnect Reliability Dependence on Fast Diffusivity Paths"; Microelectronics Reliability, 52, (invited) (2012), 1532 - 1538 doi:10.1016/j.microrel.2011.09.035. BibTeX
19.	R. Orio, H. Ceric, S. Selberherr: "Electromigration Failure in a Copper Dual-Damascene Structure with a Through Silicon Via"; Microelectronics Reliability, 52, (2012), 1981 - 1986 doi:10.1016/j.microrel.2012.07.021. BibTeX
18.	H. Ceric, S. Selberherr: "Electromigration in Submicron Interconnect Features of Integrated Circuits"; Materials Science and Engineering R-Reports, 71, (2011), 53 - 86 doi:10.1016/j.mser.2010.09.001. BibTeX
17.	R. Orio, H. Ceric, S. Selberherr: "A Compact Model for Early Electromigration Failures of Copper Dual-Damascene Interconnects"; Microelectronics Reliability, 51, (2011), 1573 - 1577 doi:10.1016/j.microrel.2011.07.049. BibTeX
16.	I. Starkov, S. E. Tyaginov, H. Enichlmair, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Ceric, T. Grasser: "Hot-Carrier Degradation Caused Interface State Profile-Simulation versus Experiment"; Journal of Vacuum Science & Technology B, 29, (2011), 01AB09-1 - 01AB09-8 doi:10.1116/1.3534021. BibTeX
15.	I. Starkov, S. E. Tyaginov, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser: "Accurate Extraction of MOSFET Unstressed Interface State Spatial Distribution from Charge Pumping Measurements"; Solid State Phenomena, 178-179, (2011), 267 - 272 doi:10.4028/www.scientific.net/SSP.178-179.267. BibTeX
14.	S. E. Tyaginov, I. Starkov, H. Enichlmair, C. Jungemann, J.M. Park, E. Seebacher, R. Orio, H. Ceric, T. Grasser: "An Analytical Approach for Physical Modeling of Hot-Carrier Induced Degradation"; Microelectronics Reliability, 51, (2011), 1525 - 1529 doi:10.1016/j.microrel.2011.07.089. BibTeX
13.	R. Huang, W. Robl, H. Ceric, T. Detzel, G. Dehm: "Stress, Sheet Resistance, and Microstructure Evolution of Electroplated Cu Films During Self-Annealing"; IEEE Transactions on Device and Materials Reliability, 10, (2010), 47 - 54 doi:10.1109/TDMR.2009.2032768. BibTeX
12.	R. Huang, A. Taylor, S. Himmelsbach, H. Ceric, T. Detzel: "Apparatus for Measuring Local Stress of Metallic Films, Using an Array of Parallel Laser Beams during Rapid Thermal Processing"; Measurement Science & Technology, 21, (2010), 55702 - 55710. BibTeX
11.	R. Orio, H. Ceric, S. Selberherr: "Physically based Models of Electromigration: From Black´s Equation to Modern TCAD Models"; Microelectronics Reliability, 50, (invited) (2010), 775 - 789 doi:10.1016/j.microrel.2010.01.007. BibTeX
10.	S. E. Tyaginov, I. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser: "Interface Traps Density-of-States as a Vital Component for Hot-Carrier Degradation Modeling"; Microelectronics Reliability, 50, (2010), 1267 - 1272 doi:10.1016/j.microrel.2010.0. BibTeX
9.	H. Ceric, R. Orio, J. Cervenka, S. Selberherr: "A Comprehensive TCAD Approach for Assessing Electromigration Reliability of Modern Interconnects"; IEEE Transactions on Device and Materials Reliability, 9, (2009), 9 - 19 doi:10.1109/TDMR.2008.2000893. BibTeX
8.	R. Orio, H. Ceric, S. Selberherr: "Analysis of Electromigration in Dual-Damascene Interconnect Structures"; Journal Integrated Circuits and Systems, 4, (2009), 67 - 72 doi:10.29292/jics.v4i2.300. BibTeX
7.	J. Cervenka, H. Ceric, S. Selberherr: "Three-Dimensional Simulation of Sacrificial Etching"; Microsystem Technologies - Micro- and Nanosystems - Information Storage and Processing Systems, 14, (2008), 665 - 671 doi:10.1007/s00542-007-0491-1. BibTeX
6.	R. Orio, H. Ceric, S. Selberherr: "Effect of Strains on Anisotropic Material Transport in Copper Interconnect Structures under Electromigration Stress"; Journal of Computational Electronics, 7, (2008), 128 - 131 doi:10.1007/s10825-008-0211-9. BibTeX
5.	J. Cervenka, H. Ceric, S. Selberherr: "Three-Dimensional Simulation of Sacrificial Etching"; Proceedings of SPIE, 6589, (2007), 452 - 460 doi:10.1117/12.721979. BibTeX
4.	M. Movahhedi, A. Abdipour, H. Ceric, A. Sheikholeslami, S. Selberherr: "Optimization of the Perfectly Matched Layer for the Finite-Element Time-Domain Method"; IEEE Microwave and Wireless Components Letters, 17, (2007), 10 - 12 doi:10.1109/LMWC.2006.887240. BibTeX
3.	S. Holzer, Ch. Hollauer, H. Ceric, S. Wagner, E. Langer, T. Grasser, S. Selberherr: "Transient Electro-Thermal Investigations of Interconnect Structures Exposed to Mechanical Stress"; Proceedings of SPIE, 5837, (2005), 380 - 387 doi:10.1117/12.608414. BibTeX
2.	H. Ceric, S. Selberherr: "An Adaptive Grid Approach for the Simulation of Electromigration Induced Void Migration"; IEICE Transactions on Electronics, E86-C, (invited) (2003), 421 - 426. BibTeX
1.	H. Ceric, S. Selberherr: "Simulative Prediction of the Resistance Change due to Electromigration Induced Void Evolution"; Microelectronics Reliability, 42, (2002), 1457 - 1460 doi:10.1016/S0026-2714(02)00169-5. BibTeX

Contributions to Books

3.	H. Ceric, H. Zahedmanesh, R. Lacerda de Orio, S. Selberherr: "Models and Techniques for Reliability Studies of Nano-scaled Interconnects"; in "Advances in Measurements and Instrumentation: Reviews", 3, S. Yurish (ed); International Frequency Sensor Association (IFSA) Publishing, 2021, ISBN: 978-84-09-33338-7, 93 - 111. BibTeX
2.	H. Ceric, R. Heinzl, Ch. Hollauer, T. Grasser, S. Selberherr: "Microstructure and Stress Aspects of Electromigration Modeling"; in "Stress-Induced Phenomena in Metallization", American Institute of Physics, Melville, 2006, ISBN: 0-7354-03104, 262 - 268. BibTeX
1.	Ch. Hollauer, H. Ceric, S. Selberherr: "Three-Dimensional Simulation of Thermal Oxidation and the Influence of Stress"; in "Physics and Chemistry of SiO₂ and the Si-SiO₂ Interface-5, Vol. 1 No. 1", issued by H.Z. Massoud, J.H. Stathis, T. Hattori, D. Misra, I. Baumvol; ECS Transactions, Pennington, 2005, ISBN: 1-56677-430-6, 103 - 113 doi:10.1149/ma2005-02/19/734. BibTeX

Talks and Poster Presentations (with Proceedings-Entry)

119.	H. Ceric, S. Selberherr, H. Zahedmanesh, R. Orio, K. Croes: "Assessment of Electromigration in Nano‐Interconnects"; Talk: International Conference on Reliability and Stress-Related Phenomena in Nanoelectronics (IRSP), San Jose, USA; (invited) 2019-11-04 - 2019-11-06; in "Abstracts of the International Conference on Reliability and Stress-Related Phenomena in Nanoelectronics (IRSP)", (2019), 7. BibTeX
118.	H. Ceric, H. Zahedmanesh: "Advanced Modeling and Simulation of Cu Nano-Interconnects Reliability"; Poster: IEEE International Interconnect Technology Conference (IITC), Brussels, Belgium; 2019-06-03 - 2019-06-06; in "Proceedings of the International Interconnect Technology Conference (IITC)", (2019), . BibTeX
117.	A. Grill, B. Stampfer, M. Waltl, K.-S. Im, J. Lee, C. Ostermaier, H. Ceric, T. Grasser: "Characterization and Modeling of Single Defects in GaN/AlGaN Fin-MIS-HEMTs"; Talk: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2017-04-02 - 2017-04-06; in "Proceedings of IEEE International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6641-4, 3B-5.1 - 3B-5.5 doi:10.1109/IRPS.2017.7936285. BibTeX
116.	S. Papaleo, M. Rovitto, H. Ceric: "Mechanical Effects of the Volmer-Weber Growth in the TSV Sidewall"; Talk: IEEE Electronic Components and Technology Conference (ECTC), Las Vegas, NV, USA; 2016-05-31 - 2016-06-03; in "Proceedings of IEEE Electronic Components and Technology Conference (ECTC)", (2016), ISBN: 978-1-5090-1204-6, 1617 - 1622 doi:10.1109/ECTC.2016.19. BibTeX
115.	M. Rovitto, H. Ceric: "Electromigration Induced Voiding and Resistance Change in Three-Dimensional Copper Through Silicon Vias"; Talk: IEEE Electronic Components and Technology Conference (ECTC), Las Vegas, NV, USA; 2016-05-31 - 2016-06-03; in "Proceedings of IEEE Electronic Components and Technology Conference (ECTC)", (2016), ISBN: 978-1-5090-1204-6, 550 - 556 doi:10.1109/ECTC.2016.49. BibTeX
114.	H. Ceric, R. Orio, M. Rovitto: "TCAD Approach for the Assessment of Interconnect Reliability"; Talk: International Conference Reliability and Stress-Related Phenomena in Nanoelectronics - Experiment and Simulation (IRSP), Bad Schandau, Germany; (invited) 2016-05-30 - 2016-06-01; in "Abstracts of the International Conference Reliability and Stress-Related Phenomena in Nanoelectronics - Experiment and Simulation (IRSP)", (2016), T21. BibTeX
113.	S. Papaleo, H. Ceric: "A Finite Element Method Study of Delamination at the Interface of the TSV Interconnects"; Poster: International Reliability Physics Symposium (IRPS), Pasadena, CA USA; 2016-04-17 - 2016-04-21; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2016), ISBN: 978-1-4673-9136-8, PA-2-1 - PA-2-4 doi:10.1109/IRPS.2016.7574626. BibTeX
112.	A. Grill, G. Rzepa, P. Lagger, C. Ostermaier, H. Ceric, T. Grasser: "Charge Feedback Mechanisms at Forward Threshold Voltage Stress in GaN/AlGaN HEMTs"; Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2015-10-11 - 2015-10-15; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2015), ISBN: 978-1-4673-7395-1, 41 - 45 doi:10.1109/IIRW.2015.7437064. BibTeX
111.	P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, K. Rupp, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser: "Comparison of Analytic Distribution Function Models for Hot-Carrier Degradation in nLDMOSFETs"; Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Toulouse, France; 2015-10-05 - 2015-10-09; in "Abstracts of the 26^th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis", (2015), 60. BibTeX
110.	H. Ceric, M. Rovitto: "Impact of Microstructure and Current Crowding on Electromigration: A TCAD Study"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 2015-09-09 - 2015-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7858-1, 194 - 197 doi:10.1109/SISPAD.2015.7292292. BibTeX
109.	S. Papaleo, W. H. Zisser, H. Ceric: "Factors that Influence Delamination at the Bottom of Open TSVs"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 2015-09-09 - 2015-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7858-1, 421 - 424 doi:10.1109/SISPAD.2015.7292350. BibTeX
108.	S. Papaleo, W. H. Zisser, H. Ceric: "Effects of the Initial Stress at the Bottom of Open TSVs"; Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Hsinchu, Taiwan; 2015-06-29 - 2015-07-02; in "Proceedings of the IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2015), . BibTeX
107.	M. Rovitto, W. H. Zisser, H. Ceric: "Analysis of Electromigration Void Nucleation Failure Time in Open Copper TSVs"; Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Hsinchu, Taiwan; 2015-06-29 - 2015-07-02; in "Proceedings of the IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2015), . BibTeX
106.	H. Ceric, S. Selberherr: "Compact Model for Solder Bump Electromigration Failure"; Poster: International Interconnect Technology and Materials for Advanced Metallization Conference (IITC/MAM), Grenoble, France; 2015-05-18 - 2015-05-21; in "Proceedings of the International Interconnect Technology and Materials for Advanced Metallization Conference (IITC/MAM)", (2015), ISBN: 978-1-4673-7355-5, 159 - 161 doi:10.1109/IITC-MAM.2015.7325651. BibTeX
105.	P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, K. Rupp, M. Bina, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser: "Predictive and Efficient Modeling of Hot-Carrier Degradation in nLDMOS Devices"; Talk: IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), Hong Kong, China; 2015-05-10 - 2015-05-14; in "Proceedings of the IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)", (2015), ISBN: 978-1-4799-6259-4, 389 - 392 doi:10.1109/ISPSD.2015.7123471. BibTeX
104.	M. Rovitto, W. H. Zisser, H. Ceric, T. Grasser: "Electromigration Modelling of Void Nucleation in Open Cu-TSVs"; Poster: International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), Budapest, Hungary; 2015-04-19 - 2015-04-22; in "Proceedings of the International Conference on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)", (2015), ISBN: 978-1-4799-9949-1, 5 page(s) doi:10.1109/EuroSimE.2015.7103100. BibTeX
103.	P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser: "A Model for Hot-Carrier Degradation in nLDMOS Transistors Based on the Exact Solution of the Boltzmann Transport Equation Versus the Drift-Diffusion Scheme"; Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Bologna, Italy; 2015-01-26 - 2015-01-28; in "Proceedings of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2015), 21 - 24 doi:10.1109/ULIS.2015.7063763. BibTeX
102.	H. Ceric, W. H. Zisser, S. Selberherr: "Quantum Mechanical Calculations of Electromigration Characteristics"; Talk: International Workshop on Stress-Induced Phenomena in Microelectronics, Austin, TX, USA; (invited) 2014-10-15 - 2014-10-17; in "Abstracts of 13th International Workshop on Stress-Induced Phenomena in Microelectronics", (2014), 16. BibTeX
101.	S. Papaleo, W. H. Zisser, A. P. Singulani, H. Ceric, S. Selberherr: "Stress Evolution During the Nanoindentation in Open TSVs"; Poster: International Workshop on Stress-Induced Phenomena in Microelectronics, Austin, TX, USA; 2014-10-15 - 2014-10-17; in "Abstracts of 13th International Workshop on Stress-Induced Phenomena in Microelectronics", (2014), 44. BibTeX
100.	W. H. Zisser, H. Ceric, S. Selberherr: "Void Evolution in Open TSVs"; Poster: International Workshop on Stress-Induced Phenomena in Microelectronics, Austin, TX, USA; 2014-10-15 - 2014-10-17; in "Abstracts of 13th International Workshop on Stress-Induced Phenomena in Microelectronics", (2014), 58. BibTeX
99.	R. Orio, S. Gousseau, S. Moreau, H. Ceric, S. Selberherr, A. Farcy, F. Bay, K. Inal, P. Montmitonnet: "On the Material Depletion Rate Due to Electromigration in a Copper TSV Structure"; Poster: IEEE International Reliability Workshop (IIRW), Fallen Leaf Lake, CA, USA; 2014-10-12 - 2014-10-16; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2014), ISBN: 978-1-4799-7274-6, 111 - 114 doi:10.1109/IIRW.2014.7049523. BibTeX
98.	S. E. Tyaginov, M. Bina, J. Franco, Y. Wimmer, F. Rudolf, H. Enichlmair, J.M. Park, B. Kaczer, H. Ceric, T. Grasser: "Dominant Mechanism of Hot-Carrier Degradation in Short- and Long-Channel Transistors"; Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2014-10-12 - 2014-10-16; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2014), ISBN: 978-1-4799-7308-8, 63 - 68 doi:10.1109/IIRW.2014.7049512. BibTeX
97.	Y. Wimmer, S. E. Tyaginov, F. Rudolf, K. Rupp, M. Bina, H. Enichlmair, J.M. Park, R. Minixhofer, H. Ceric, T. Grasser: "Physical Modeling of Hot-Carrier Degradation in nLDMOS Transistors"; Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2014-10-12 - 2014-10-16; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2014), ISBN: 978-1-4799-7308-8, 58 - 62 doi:10.1109/IIRW.2014.7049511. BibTeX
96.	W. H. Zisser, H. Ceric, J. Weinbub, S. Selberherr: "Electromigration Reliability of Open TSV Structures"; Poster: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Berlin, Germany; 2014-09-29 - 2014-10-02; in "Abstracts 25th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)", (2014), 48. BibTeX
95.	H. Ceric, W. H. Zisser, M. Rovitto, S. Selberherr: "Electromigration in Solder Bumps: A Mean-Time-to-Failure TCAD Study"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 2014-09-09 - 2014-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 221 - 224 doi:10.1109/SISPAD.2014.6931603. BibTeX
94.	W. H. Zisser, H. Ceric, J. Weinbub, S. Selberherr: "Electromigration Induced Resistance Increase in Open TSVs"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 2014-09-09 - 2014-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 249 - 252 doi:10.1109/SISPAD.2014.6931610. BibTeX
93.	S. Papaleo, W. H. Zisser, A. P. Singulani, H. Ceric, S. Selberherr: "Stress Analysis in Open TSVs after Nanoindentation"; Talk: GDRI CNRS Mecano General Meeting on the Mechanics of Nano-objects, Thun, Switzerland; 2014-09-04 - 2014-09-05; in "Abstracts", (2014), 39 - 40. BibTeX
92.	W. H. Zisser, H. Ceric, S. Selberherr: "Stress Development and Void Evolution in Open TSVs"; Talk: GDRI CNRS Mecano General Meeting on the Mechanics of Nano-objects, Thun, Switzerland; 2014-09-04 - 2014-09-05; in "Abstracts", (2014), 38 - 39. BibTeX
91.	H. Ceric, S. Selberherr: "Electromigration Reliability of Solder Bumps"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, Singapore; 2014-06-30 - 2014-07-04; in "Proceedings of the 21st International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2014), ISBN: 978-1-4799-3931-2, 336 - 339 doi:10.1109/IPFA.2014.6898145. BibTeX
90.	W. H. Zisser, H. Ceric, J. Weinbub, S. Selberherr: "Electromigration Reliability of Open TSV Structures"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, Singapore; 2014-06-30 - 2014-07-04; in "Proceedings of the 21st International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2014), ISBN: 978-1-4799-3931-2, 317 - 320 doi:10.1109/IPFA.2014.6898179. BibTeX
89.	H. Ceric, S. Selberherr: "Electromigration Induced Failure of Solder Bumps and the Role of IMC"; Poster: IEEE International Interconnect Technology Conference (IITC), San Jose, USA; 2014-05-20 - 2014-05-23; in "Proceedings of the International Interconnect Technology Conference (IITC)", (2014), ISBN: 978-1-4799-5017-1, 265 - 267 doi:10.1109/IITC.2014.6831891. BibTeX
88.	H. Ceric, R. Orio, A. P. Singulani, S. Selberherr: "3D Technology Interconnect Reliability TCAD"; Talk: Pan Pacific Microelectronics Symposium, Big Island of Hawaii, USA; 2014-02-11 - 2014-02-13; in "Proceedings of the 2014 Pan Pacific Microelectronics Symposium", (2014), ISBN: 978-0-9888873-3-6, 1 - 8. BibTeX
87.	H. Ceric, A. P. Singulani, R. Orio, S. Selberherr: "Electromigration Enhanced Growth of Intermetallic Compound in Solder Bumps"; Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 2013-10-13 - 2013-10-17; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2013), ISBN: 978-1-4799-0350-4, 166 - 169 doi:10.1109/IIRW.2013.6804185. BibTeX
86.	R. Coppeta, H. Ceric, D. Holec, T. Grasser: "Critical thickness for GaN thin film on AlN substrate"; Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 2013-10-13 - 2013-10-17; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2013), ISBN: 978-1-4799-0350-4, 133 - 136. BibTeX
85.	W. H. Zisser, H. Ceric, R. Orio, S. Selberherr: "Electromigration Induced Stress in Open TSVs"; Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 2013-10-13 - 2013-10-17; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2013), ISBN: 978-1-4799-0350-4, 142 - 145 doi:10.1109/IIRW.2013.6804179. BibTeX
84.	H. Ceric, A. P. Singulani, R. Orio, S. Selberherr: "Impact of Intermetallic Compound on Solder Bump Electromigration Reliability"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 2013-09-03 - 2013-09-05; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 73 - 76 doi:10.1109/SISPAD.2013.6650577. BibTeX
83.	R. Coppeta, H. Ceric, B. Karunamurthy, T. Grasser: "Epitaxial Volmer-Weber Growth Modelling"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 2013-09-03 - 2013-09-05; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 45 - 48 doi:10.1109/SISPAD.2013.6650570. BibTeX
82.	R. Orio, H. Ceric, S. Selberherr: "Influence of Temperature on the Standard Deviation of Electromigration Lifetimes"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 2013-09-03 - 2013-09-05; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 232 - 235 doi:10.1109/SISPAD.2013.6650617. BibTeX
81.	A. P. Singulani, H. Ceric, S. Selberherr: "Stress Estimation in Open Tungsten TSV"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 2013-09-03 - 2013-09-05; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 65 - 68 doi:10.1109/SISPAD.2013.6650575. BibTeX
80.	W. H. Zisser, H. Ceric, R. Orio, S. Selberherr: "Electromigration Analyses of Open TSVs"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 2013-09-03 - 2013-09-05; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 244 - 247 doi:10.1109/SISPAD.2013.6650620. BibTeX
79.	H. Ceric, R. Orio, S. Selberherr: "Analysis of Solder Bump Electromigration Reliability"; Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou, China; 2013-07-15 - 2013-07-19; in "Proceedings of the 20th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2013), ISBN: 978-1-4799-0478-5, 713 - 716 doi:10.1109/IPFA.2013.6599258. BibTeX
78.	A. P. Singulani, H. Ceric, E. Langer: "Stress Evolution on Tungsten Thin-Film of an Open Through Silicon Via Technology"; Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou, China; 2013-07-15 - 2013-07-19; in "Proceedings of the 20th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2013), ISBN: 978-1-4799-0478-5, 216 - 220 doi:10.1109/IPFA.2013.6599155. BibTeX
77.	A. P. Singulani, H. Ceric, E. Langer: "Stress reduction induced by Bosch scallops on an open TSV technology"; Poster: IEEE International Interconnect Technology Conference (IITC), Kyoto, Japan; 2013-06-13 - 2013-06-15; in "Proceedings of the International Interconnect Techonology Conference (IITC)", (2013), ISBN: 978-1-4799-0438-9, 1 - 2 doi:10.1109/IITC.2013.6615578. BibTeX
76.	A. P. Singulani, H. Ceric, L. Filipovic, E. Langer: "Impact of Bosch Scallops Dimensions on Stress of an Open Through Silicon Via Technology"; Talk: International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, Poland; 2013-04-14 - 2013-04-17; in "Proceedings of the IEEE 14th International Conference on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EurSimE)", (2013), ISBN: 978-1-4673-6137-8, 6 page(s) doi:10.1109/EuroSimE.2013.6529938. BibTeX
75.	A. P. Singulani, H. Ceric, E. Langer, S. Carniello: "Effects of Bosch scallops on metal layer stress of an open Through Silicon Via technology"; Poster: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2013-04-14 - 2013-04-18; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2013), ISBN: 978-1-4799-0112-8, CP.2.1 - CP.2.5 doi:10.1109/IRPS.2013.6532066. BibTeX
74.	A. P. Singulani, H. Ceric, S. Selberherr: "Thermo-mechanical Simulations of an Open Tungsten TSV"; Talk: IEEE Electronics Packaging Technology Conference (EPTC), Singapore; 2012-12-05 - 2012-12-07; in "Proceedings of the IEEE 14th Electronics Packaging Technology Conference (EPTC)", (2012), ISBN: 978-1-4673-4551-4, 110 - 114 doi:10.1109/EPTC.2012.6507061. BibTeX
73.	R. Orio, H. Ceric, S. Selberherr: "Electromigration Failure in a Copper Dual-Damascene Structure with a Through Silicon Via"; Poster: 23rd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, Cagliari, Italy; 2012-10-01 - 2012-10-05; in "Proceedings of the 23rd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2012), 1981 - 1986. BibTeX
72.	H. Ceric, R. Orio, S. Selberherr: "TCAD Study of Electromigration Failure Modes in Sn-Based Solder Bumps"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 2012-09-05 - 2012-09-07; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2, 264 - 267. BibTeX
71.	R. Orio, H. Ceric, S. Selberherr: "Modeling of Electromigration Induced Resistance Change in Three-Dimensional Interconnects with Through Silicon Vias"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 2012-09-05 - 2012-09-07; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2, 268 - 271. BibTeX
70.	R. Orio, H. Ceric, S. Selberherr: "Analysis of Resistance Change Development due to Voiding in Copper Interconnects ended by a Through Silicon Via"; Talk: International Symposium on Microelectronics Technology and Devices (SBMicro), Brasilia, Brazil; 2012-08-30 - 2012-09-02; in "ECS Transactions", (2012), 1, ISBN: 978-1-56677-990-6, 273 - 280 doi:10.1149/04901.0273ecst. BibTeX
69.	H. Ceric, R. Orio, W. H. Zisser, S. Selberherr: "Ab Initio Method for Electromigration Analysis"; Talk: IEEE Electronics Packaging Technology Conference (EPTC), Singapore; 2012-07-02 - 2012-07-06; in "Proceedings of the 19th IEEE International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2012), ISBN: 978-1-4673-0982-0, 4 page(s) doi:10.1109/IPFA.2012.6306306. BibTeX
68.	H. Ceric, R. Orio, S. Selberherr: "Atomistic Method for Analysis of Electromigration"; Poster: IEEE International Interconnect Technology Conference (IITC), San Jose, USA; 2012-06-04 - 2012-06-06; in "Proceedings of the IEEE International Interconnect Technology Conference", (2012), ISBN: 978-1-4673-1137-3, 3 page(s) . BibTeX
67.	H. Ceric, R. Orio, W. H. Zisser, V. Schnitzer, S. Selberherr: "Modeling of Microstructural Effects on Electromigration Failure"; Talk: International Workshop on Stress-Induced Phenomena in Microelectronics, Kyoto, Japan; (invited) 2012-05-28 - 2012-05-30; in "Abstracts of 12th International Workshop on Stress-Induced Phenomena in Microelectronics", (2012), 50 - 51. BibTeX
66.	I. Starkov, A. S. Starkov, S. E. Tyaginov, H. Enichlmair, H. Ceric, T. Grasser: "An Analytical Model for MOSFET Local Oxide Capacitance"; Talk: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 2011-12-07 - 2011-12-09; in "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3, 2 page(s) . BibTeX
65.	S. E. Tyaginov, I. Starkov, H. Enichlmair, C. Jungemann, J.M. Park, E. Seebacher, R. Orio, H. Ceric, T. Grasser: "An Analytical Approach for Physical Modeling of Hot-Carrier Induced Degradation"; Talk: 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, Bordeaux, France; 2011-10-03 - 2011-10-07; in "Proceedings of the 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2011), 51, 1525 - 1529. BibTeX
64.	I. Starkov, H. Ceric: "Impact of Interface State Density on MOSFET Local Oxide Capacitance Degradation During Hot-Carrier Stress"; Poster: International Conference on Solid State Devices and Materials, Nagoya, Japan; 2011-09-28 - 2011-09-30; in "Extended Abstracts of 2011 International Conference on Solid State Devices and Materials", (2011), 90 - 91. BibTeX
63.	I. Starkov, S. E. Tyaginov, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser: "Accurate Extraction of MOSFET Interface State Spatial Distribution from Charge Pumping Measurements"; Talk: Gettering and Defect Engineering in Semiconductor Technology, Loipersdorf, Austria; 2011-09-25 - 2011-09-30; in "GADEST 2011: Abstract Booklet", (2011), 105 - 106. BibTeX
62.	H. Ceric, R. Orio, F. Schanovsky, W. H. Zisser, S. Selberherr: "Multilevel Simulation for the Investigation of Fast Diffusivity Paths"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 135 - 138 doi:10.1109/SISPAD.2011.6035068. BibTeX
61.	R. Orio, H. Ceric, S. Selberherr: "A Compact Model for Early Electromigration Lifetime Estimation"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 23 - 26 doi:10.1109/SISPAD.2011.6035040. BibTeX
60.	I. Starkov, H. Ceric, S. E. Tyaginov, T. Grasser, H. Enichlmair, J.M. Park, C. Jungemann: "Analysis of Worst-Case Hot-Carrier Degradation Conditions in the Case of n- and p-channel High-Voltage MOSFETs"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 127 - 130 doi:10.1109/SISPAD.2011.6035066. BibTeX
59.	S. E. Tyaginov, I. Starkov, O. Triebl, H. Ceric, T. Grasser, H. Enichlmair, J.M. Park, C. Jungemann: "Secondary Generated Holes as a Crucial Component for Modeling of HC Degradation in High-Voltage n-MOSFET"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 123 - 126 doi:10.1109/SISPAD.2011.6035065. BibTeX
58.	R. Orio, H. Ceric, S. Selberherr: "Modeling Electromigration Lifetimes of Copper Interconnects"; Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Joao Pessoa, Brazil; 2011-08-30 - 2011-09-02; in "ECS Transactions", (2011), ISBN: 978-1-56677-900-5, 163 - 169 doi:10.1149/1.3615190. BibTeX
57.	H. Ceric, R. Orio, S. Selberherr: "Integration of Atomistic and Continuum-Level Electromigration Models"; Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Incheon, South Korea; 2011-07-04 - 2011-07-07; in "IPFA 2011 Proceedings", (2011), ISBN: 978-1-4577-0159-7, 4 page(s) doi:10.1109/IPFA.2011.5992749. BibTeX
56.	I. Starkov, H. Ceric, S. E. Tyaginov, T. Grasser: "Analysis of Worst-Case Hot-Carrier Conditions for n-type MOSFET"; Talk: 7th Conference on PhD Research in Microelectronics and Electronics (PRIME), Madonna di Campiglio, Italy; 2011-07-03 - 2011-07-07; in "Proceedings of the 7th Conference on PhD Research in Microelectronics and Electronics", (2011), ISBN: 978-1-4244-9136-0, 4 page(s) doi:10.1109/PRIME.2011.5966251. BibTeX
55.	H. Ceric, R. Orio, S. Selberherr: "Interconnect Reliability Dependence on Fast Diffusivity Paths"; Talk: International Conference on Materials for Advanced Technologies (ICMAT), Suntec, Singapore; (invited) 2011-06-26 - 2011-07-01; in "Proceedings of the International Conference on Materials for Advanced Technologies (ICMAT 2011)", (2011), 33. BibTeX
54.	L. Filipovic, H. Ceric, J. Cervenka, S. Selberherr: "A Simulator for Local Anodic Oxidation of Silicon Surfaces"; Talk: IEEE Canadian Conference on Electrical and Computer Engineering (CCECE), Niagara Falls, Canada; 2011-05-08 - 2011-05-11; in "Proceedings of the 24th Canadian Conference on Electrical and Computer Engineering (CCECE 2011)", (2011), ISBN: 978-1-4244-9789-8, 695 - 698 doi:10.1109/CCECE.2011.6030543. BibTeX
53.	S. E. Tyaginov, I. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser: "Interface Traps Density-of-States as a Vital Component for Hot-Carrier Degradation Modeling"; Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Montecassino Abbey and Gaeta; 2010-10-11 - 2010-10-15; in "Proceedings of the 21^st European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2010), 3 page(s) . BibTeX
52.	H. Ceric, R. Orio, S. Selberherr: "Impact of Parameter Variability on Electromigration Lifetime Distribution"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Bologna, Italy; 2010-09-06 - 2010-09-08; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2010), ISBN: 978-1-4244-7699-2, 217 - 220 doi:10.1109/SISPAD.2010.5604523. BibTeX
51.	H. Ceric, R. Orio, S. Selberherr: "Electromigration Anisotropy and Mechanical Stress in Modern Copper Interconnect"; Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2010-07-05 - 2010-07-09; in "Proceedings of the 17^th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9, 167 - 170. BibTeX
50.	R. Huang, W. Robl, G. Dehm, H. Ceric, T. Detzel: "Disparate Tendency of Stress Evolution of Thin and Thick Electroplated Cu Films at Room Temperature"; Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2010-07-05 - 2010-07-09; in "Proceedings of the 17^th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9, 1 - 6. BibTeX
49.	I. Starkov, S. E. Tyaginov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser: "Analysis of Worst-Case Hot-Carrier Conditions for High Voltage Transistors Based on Full-Band Monte-Carlo Simulations"; Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2010-07-05 - 2010-07-09; in "Proceedings of the 17^th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9, 139 - 144. BibTeX
48.	S. E. Tyaginov, I. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser: "Hot-Carrier Degradation Modeling Using Full-Band Monte-Carlo Simulations"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2010-07-05 - 2010-07-09; in "Proceedings of the 17^th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9, 341 - 345. BibTeX
47.	I. Starkov, S. E. Tyaginov, H. Enichlmair, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Ceric, T. Grasser: "HC Degradation Model: Interface State Profile-Simulations vs. Experiment"; Poster: Workshop on Dielectrics in Microelectronics (WODIM), Bratislava; 2010-06-28 - 2010-06-30; in "Book of Abstracts", (2010), 128. BibTeX
46.	R. Huang, W. Robl, T. Detzel, H. Ceric: "Modeling of Stress Evolution of Electroplated Cu Films during Self-annealing"; Poster: IEEE International Reliability Physics Symposium, Anaheim, USA; 2010-05-02 - 2010-05-06; in "Proceedings of the IEEE International Reliability Physics Symposium", (2010), ISBN: 978-1-4244-5431-0, 911 - 917. BibTeX
45.	R. Orio, H. Ceric, J. Cervenka, S. Selberherr: "Electromigration Failure Development in Modern Dual-Damascene Interconnects"; Talk: International Conference on Very Large Scale Integration (VLSI-SoC), Florianopolis; 2009-10-12 - 2009-10-14; in "Proceedings of the International Conference on Very Large Scale Integration (VLSI-SoC)", (2009), 15, ISBN: 978-3-90188-237-1, 5 page(s) . BibTeX
44.	H. Ceric, R. Orio, J. Cervenka, S. Selberherr: "Copper Microstructure Impact on Evolution of Electromigration Induced Voids"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego, CA, USA; 2009-09-09 - 2009-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2009), ISBN: 978-1-4244-3947-8, 178 - 181 doi:10.1109/SISPAD.2009.5290222. BibTeX
43.	R. Orio, H. Ceric, J. Cervenka, S. Selberherr: "The Effect of Copper Grain Size Statistics on the Electromigration Lifetime Distribution"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego, CA, USA; 2009-09-09 - 2009-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2009), ISBN: 978-1-4244-3947-8, 182 - 185 doi:10.1109/SISPAD.2009.5290219. BibTeX
42.	R. Orio, H. Ceric, J. Cervenka, S. Selberherr: "The Effect of Microstructure on Electromigration-Induced Failure Development"; Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Natal; 2009-08-31 - 2009-09-03; in "ECS Transactions", (2009), ISBN: 978-1-56677-737-7, 345 - 352. BibTeX
41.	H. Ceric, R. Orio, J. Cervenka, S. Selberherr: "The Effect of Microstructure on Electromigration Induced Voids"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou; 2009-07-06 - 2009-07-10; in "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2009), ISBN: 9781-4244-3912-6, 694 - 697. BibTeX
40.	R. Orio, H. Ceric, J. Cervenka, S. Selberherr: "The Effect of Microstructure on the Electromigration Lifetime Distribution"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou; 2009-07-06 - 2009-07-10; in "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA2009)", (2009), 731 - 734. BibTeX
39.	H. Ceric, R. Orio, J. Cervenka, S. Selberherr: "Stress-Induced Anisotropy of Electromigration in Copper Interconnects"; Talk: International Workshop on Stress-Induced Phenomena in Metallization, Austin; 2008-11-05 - 2008-11-07; in "Proceedings of the Stress-Induced Phenomena in Metallization: 10^th International Workshop", (2008), ISBN: 978-0-7354-0680-3, 56 - 62. BibTeX
38.	H. Ceric, R. Orio, J. Cervenka, S. Selberherr: "Analysis of Microstructure Impact on Electromigration"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 2008-09-09 - 2008-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7, 241 - 244 doi:10.1109/SISPAD.2008.4648282. BibTeX
37.	R. Orio, H. Ceric, S. Carniello, S. Selberherr: "Analysis of Electromigration in Redundant Vias"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 2008-09-09 - 2008-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7, 237 - 240 doi:10.1109/SISPAD.2008.4648281. BibTeX
36.	R. Orio, S. Carniello, H. Ceric, S. Selberherr: "Analysis of Electromigration in Dual-Damascene Interconnect Structures"; Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Gramado; 2008-09-01 - 2008-09-04; in "ECS Transactions", (2008), ISBN: 978-1-56677-646-2, 337 - 348. BibTeX
35.	H. Ceric, R. Orio, J. Cervenka, S. Selberherr: "TCAD Solutions for Submicron Copper Interconnect"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2008-07-07 - 2008-07-11; in "Proceedings 15^th International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2008), ISBN: 978-1-4244-2039-1, 78 - 81. BibTeX
34.	H. Ceric, R. Orio, S. Selberherr: "Comprehensive Modeling of Electromigration Induced Interconnect Degradation Mechanisms"; Talk: International Conference on Microelectronics (MIEL), Nis; (invited) 2008-05-11 - 2008-05-14; in "Proceedings 26th International Conference on Microelectronics", (2008), ISBN: 978-1-4244-1881-7, 69 - 76. BibTeX
33.	R. Orio, H. Ceric, S. Selberherr: "Strain-Induced Anisotropy of Electromigration in Copper Interconnect"; Talk: International Semiconductor Device Research Symposium (ISDRS), Maryland; 2007-12-12 - 2007-12-14; in "2007 International Semiconductor Device Research Symposium", (2007), ISBN: 978-1-4244-1892-3, 2 page(s) . BibTeX
32.	R. Orio, H. Ceric, S. Selberherr: "Effect of Strains on Anisotropic Material Transport in Copper Interconnect Structures under Electromigration Stress"; Poster: International Workshop on Computational Electronics (IWCE), Amherst, MA, USA; 2007-10-08 - 2007-10-10; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2007), 62 - 63. BibTeX
31.	H. Ceric, A. Nentchev, E. Langer, S. Selberherr: "Intrinsic Stress Build-Up During Volmer-Weber Crystal Growth"; Talk: T. Grasser, S. Selberherr (ed); International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 2007-09-25 - 2007-09-27; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2007), 12, ISBN: 978-3-211-72860-4, 37 - 40 doi:10.1007/978-3-211-72861-1_9. BibTeX
30.	J. Cervenka, H. Ceric, O. Ertl, S. Selberherr: "Three-Dimensional Sacriﬁcial Etching"; Poster: T. Grasser, S. Selberherr (ed); International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 2007-09-25 - 2007-09-27; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2007), 12, ISBN: 978-3-211-72860-4, 433 - 436 doi:10.1007/978-3-211-72861-1_105. BibTeX
29.	H. Ceric, S. Selberherr: "Electromigration Modeling for Interconnect Structures in Microelectronics"; Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Rio de Janeiro; (invited) 2007-09-03 - 2007-09-06; in "ECS Transactions", (2007), ISBN: 978-1-56677-565-6, 295 - 304. BibTeX
28.	H. Ceric, S. Selberherr: "Electromigration in Interconnect Structures of Microelectronic Circuits"; Talk: Microelectroncs, Electronics, and Electronic Technologies (MIPRO), Opatija; (invited) 2007-05-21 - 2007-05-25; in "Microelectronics, Electronics, and Electronic Technologies (MEET)", (2007), ISBN: 978-953-233-032-8, 23 - 28. BibTeX
27.	H. Ceric, E. Langer, S. Selberherr: "Modeling of Residual Stresses in Thin Metal Films"; Poster: International Workshop on Stress-Induced Phenomena in Metallization, Kyoto, Japan; 2007-04-04 - 2007-04-06; in "9^th International Workshop on Stress-Induced Phenomena in Metallization", (2007), 18. BibTeX
26.	H. Ceric, E. Langer, S. Selberherr: "Three-Phase Model for the Volmer-Weber Crystal Growth"; Talk: Nanostructures and Carrier Interactions (NNCI), Atsugi, Japan; 2007-02-20 - 2007-02-23; in "Nanostructures and Carrier Interactions", (2007), 127. BibTeX
25.	Ch. Hollauer, H. Ceric, G. van Barel, A. Witvrouw, S. Selberherr: "Investigation of Intrinsic Stress Effects in Cantilever Structures"; Talk: IEEE Nano/Micro Engineered and Molecular Systems, Bangkok, Thailand; 2007-01-16 - 2007-01-19; in "Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems (CD ROM)", (2007), ISBN: 1-4244-0610-2, 4 page(s) . BibTeX
24.	Ch. Hollauer, H. Ceric, S. Selberherr: "Modeling of Intrinsic Stress Effects in Deposited Thin Films"; Talk: EUROSENSORS XX, Göteborg; 2006-09-17 - 2006-09-20; in "Eurosensors 20^th Anniversary Vol. 1", (2006), ISBN: 91-631-9280-2, 324 - 325. BibTeX
23.	M. Movahhedi, A. Nentchev, H. Ceric, A. Abdipour, S. Selberherr: "A Finite Element Time-Domain Algorithm Based on the Alternating-Direction Implicit Method"; Talk: European Microwave Week (EUMW), Manchester; 2006-09-10 - 2006-09-15; in "European Microwave Week 2006 Book of Abstracts", (2006), ISBN: 2-9600551-6-0, 1 - 4. BibTeX
22.	H. Ceric, Ch. Hollauer, S. Selberherr: "Three-Dimensional Simulation of Intrinsic Stress Build-Up in Thin Films"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 2006-09-06 - 2006-09-08; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5, 192 - 195 doi:10.1109/SISPAD.2006.282869. BibTeX
21.	H. Ceric, J. Cervenka, E. Langer, S. Selberherr: "Moving Boundary Applications in Process and Interconnect TCAD"; Talk: Mini-Workshop on Anisotropic Motion Laws, Oberwolfach; 2006-08-13 - 2006-08-19; in "Proceedings Mini-Workshop on Anisotropic Motion Laws", (2006), Report No.38/2006, 13 - 16. BibTeX
20.	H. Ceric, Ch. Hollauer, S. Selberherr: "Simulation of Texture Development Caused Stress Build-Up in Electroplated Copper Lines"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2006-07-03 - 2006-07-07; in "Proceedings 13^th International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2006), ISBN: 1-4244-0206-9, 359 - 363. BibTeX
19.	S. Holzer, Ch. Hollauer, H. Ceric, M. Karner, T. Grasser, E. Langer, S. Selberherr: "Three-Dimensional Transient Interconnect Analysis With Regard to Mechanical Stress"; Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2006-07-03 - 2006-07-07; in "Proceedings 13^th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2006), ISBN: 1-4244-0206-9, 154 - 157. BibTeX
18.	R. Wittmann, H. Puchner, H. Ceric, S. Selberherr: "Impact of Random Bit Values on NBTI Lifetime of an SRAM Cell"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2006-07-03 - 2006-07-07; in "Proceedings 13^th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2006), ISBN: 1-4244-0206-9, 41 - 44. BibTeX
17.	R. Wittmann, H. Puchner, L. Hinh, H. Ceric, A. Gehring, S. Selberherr: "Impact of NBTI-driven Parameter Degradation on Lifetime of a 90nm p-MOSFET"; Poster: IEEE International Reliability Workshop (IIRW), S. Lake Tahoe; 2005-10-17 - 2005-10-20; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2005), ISBN: 0-7803-8992-1, 99 - 102. BibTeX
16.	Ch. Hollauer, H. Ceric, S. Selberherr: "Three-Dimensional Simulation of Thermal Oxidation and the Influence of Stress"; Talk: Meeting of the Electrochemical Society, Physics and Chemistry of SiO2 and the Si-SiO2 Interface, Los Angeles; 2005-10-16 - 2005-10-21; in "208^th ECS Meeting", (2005), ISSN: 1091-8213, 1 page(s) . BibTeX
15.	H. Ceric, Ch. Hollauer, S. Selberherr: "Microstructure and Stress Aspects of Electromigration Modeling"; Poster: International Workshop on Stress-Induced Phenomena in Metallization, Dresden; 2005-09-12 - 2005-09-14; in "8^th International Workshop on Stress-Induced Phenomena in Metallization", (2005), P 17. BibTeX
14.	Ch. Hollauer, H. Ceric, S. Selberherr: "Three-Dimensional Simulation of Stress Dependent Thermal Oxidation"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 2005-09-01 - 2005-09-03; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5, 183 - 186 doi:10.1109/SISPAD.2005.201503. BibTeX
13.	W. Wessner, H. Ceric, J. Cervenka, S. Selberherr: "Dynamic Mesh Adaptation for Three-Dimensional Electromigration Simulation"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 2005-09-01 - 2005-09-03; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5, 147 - 150 doi:10.1109/SISPAD.2005.201494. BibTeX
12.	H. Ceric, V. Deshpande, Ch. Hollauer, S. Holzer, T. Grasser, S. Selberherr: "Comprehensive Analysis of Vacancy Dynamics Due to Electromigration"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2005-06-27 - 2005-07-01; in "Proceedings of the 12^th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2005), ISBN: 0-7803-9301-5, 100 - 103. BibTeX
11.	Ch. Hollauer, S. Holzer, H. Ceric, S. Wagner, T. Grasser, S. Selberherr: "Investigation of Thermo-Mechanical Stress in Modern Interconnect Layouts"; Talk: International Congress on Thermal Stresses (TS), Wien; 2005-05-26 - 2005-05-29; in "Proceedings of The Sixth International Congress on Thermal Stresses", (2005), Vol. 2, ISBN: 3-901167-12-9, 637 - 640. BibTeX
10.	S. Holzer, Ch. Hollauer, H. Ceric, S. Wagner, R. Entner, E. Langer, T. Grasser, S. Selberherr: "Three-Dimensional Transient Electro-Thermal Interconnect Simulation for Stress and Electromigration Analysis"; Poster: The Nanotechnology Conference and Trade Show, Anaheim; 2005-05-08 - 2005-05-12; in "NSTI Nanotech Technical Proceedings", (2005), Vol. 3 (CDROM ISBN: 0-9767985-4-9), ISBN: 0-9767985-2-2, 620 - 623. BibTeX
9.	R. Wittmann, H. Puchner, L. Hinh, H. Ceric, A. Gehring, S. Selberherr: "Simulation of Dynamic NBTI Degradation for a 90 nm CMOS Technology"; Talk: The Nanotechnology Conference and Trade Show, Anaheim; 2005-05-08 - 2005-05-12; in "NSTI Nanotech Technical Proceedings", (2005), Vol. 3 (CDROM ISBN 0-9767985-4-9), ISBN: 0-9767985-2-2, 29 - 32. BibTeX
8.	H. Ceric, R. Sabelka, S. Holzer, W. Wessner, S. Wagner, T. Grasser, S. Selberherr: "The Evolution of the Resistance and Current Density During Electromigration"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 2004-09-02 - 2004-09-04; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2004), ISBN: 3211224688, 331 - 334 doi:10.1007/978-3-7091-0624-2_78. BibTeX
7.	W. Wessner, H. Ceric, C. Heitzinger, A. Hössinger, S. Selberherr: "Anisotropic Mesh Adaption Governed by a Hessian Matrix Metric"; Talk: European Simulation Symposium (ESS), Delft; 2003-10-26 - 2003-10-29; in "Simulation in Industry, 15th European Simulation Symposium", (2003), ISBN: 3-936150-28-1, 41 - 46. BibTeX
6.	Ch. Hollauer, H. Ceric, S. Selberherr: "Simulation of Thermal Oxidation: A Three-Dimensional Finite Element Approach"; Talk: European Solid-State Device Research Conference (ESSDERC), Estoril; 2003-09-16 - 2003-09-18; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2003), ISBN: 0-7803-7999-3, 383 - 386. BibTeX
5.	Ch. Hollauer, H. Ceric, S. Selberherr: "Three-Dimensional Modeling of Thermal Oxidation of Silicon by Means of the Finite Element Method"; Talk: Industrial Simulation Conference (ISC), Valencia; 2003-06-09 - 2003-06-11; in "Industrial Simulation Conference 2003", (2003), ISBN: 90-77381-03-1, 154 - 158. BibTeX
4.	H. Ceric, A. Hössinger, T. Binder, S. Selberherr: "Modeling of Segregation on Material Interfaces by Means of the Finite Element Method"; Talk: International Symposium on Mathematical Modeling (MATHMOD), Wien; 2003-02-05 - 2003-02-07; in "4th IMACS Symposium on Mathematical Modelling", (2003), ISBN: 3-901608-24-9, 139 - 145. BibTeX
3.	T. Binder, H. Ceric, A. Hössinger, S. Selberherr: "A Strategy to Enforce the Discrete Minimax Principle on Finite Element Meshes"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 2002-09-04 - 2002-09-06; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5, 183 - 186 doi:10.1109/SISPAD.2002.1034547. BibTeX
2.	H. Ceric, S. Selberherr: "An Adaptive Grid Approach for the Simulation of Electromigration Induced Void Migration"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 2002-09-04 - 2002-09-06; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5, 253 - 256 doi:10.1109/SISPAD.2002.1034566. BibTeX
1.	H. Ceric, S. Selberherr: "Electromigration Induced Evolution of Voids in Current Crowding Areas of Interconnects"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2002-07-08 - 2002-07-12; in "Proceedings of the 13th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis", (2002), ISBN: 0-7803-7416-9, 140 - 144. BibTeX

Talks and Poster Presentations (without Proceedings-Entry)

8.	H. Ceric, H. Zahedmanesh, K. Croes: "Analysis of Electromigration Failure of Nano-Interconnects through a Combination of Modeling and Experimental Methods"; Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Toulouse, France; 2019-09-23 - 2019-09-26; . BibTeX
7.	A. P. Singulani, H. Ceric, S. Selberherr: "Stress Evolution in the Metal Layers of TSVs with Bosch Scallops"; Poster: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Arcachon, France; 2013-09-30 - 2013-10-04; . BibTeX
6.	R. Orio, H. Ceric, S. Selberherr: "A Compact Model for Early Electromigration Failures of Copper Dual-Damascene Interconnects"; Talk: 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, Bordeaux, France; 2011-10-03 - 2011-10-07; . BibTeX
5.	K. Rupp, H. Ceric: "Analytical and Numerical Investigation of the Segregation Problem"; Talk: 4^th International Conference Computational Methods in Applied Mathematics: CMAM-4, Bedlewo; 2010-06-20 - 2010-06-26; . BibTeX
4.	J. Cervenka, H. Ceric, S. Selberherr: "Three-Dimensional Simulation of Sacriﬁcial Etching"; Talk: SPIE Smart Sensors, Actuators, and MEMS, Masapalomas, Spain; 2007-05-02 - 2007-05-04; . BibTeX
3.	S. Holzer, Ch. Hollauer, H. Ceric, S. Wagner, E. Langer, T. Grasser, S. Selberherr: "Transient Electro-Thermal Investigations of Interconnect Structures Exposed to Mechanical Stress"; Talk: SPIE VLSI Circuits and Systems, Sevilla, Spain; 2005-05-09 - 2005-05-11; . BibTeX
2.	W. Wessner, H. Ceric, Ch. Hollauer, E. Langer, S. Selberherr: "Electromigration Reliability TCAD Solutions"; Talk: SEMICON Europa2005, München; (invited) 2005-04-12 - 2005-04-14; . BibTeX
1.	H. Ceric, S. Selberherr: "Simulative Prediction of the Resistance Change due to Electromigration Induced Void Evolution"; Poster: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Rimini; 2002-10-07 - 2002-10-11; . BibTeX

Habilitation Theses

1.	H. Ceric: "Reliability of Interconnect Structures for Modern Integrated Circuits"; TU Wien, Fakultät für Elektrotechnik und Informationstechnik, (2014), . BibTeX

Doctor's Theses (authored and supervised)

3.	S. Papaleo: "Mechanical Reliability of Open Through Silicon Via Structures for Integrated Circuits"; Reviewer: H. Ceric, O. Thomas; Institut für Mikroelektronik, 2016, oral examination: 2016-12-19. BibTeX
2.	M. Rovitto: "Electromigration Reliability Issue in Interconnects for Three-Dimensional Integration Technologies"; Reviewer: H. Ceric, K. Weide-Zaage; Institut für Mikroelektronik, 2016, oral examination: 2016-12-13. BibTeX
1.	H. Ceric: "Numerical Techniques in Modern TCAD"; Reviewer: S. Selberherr, H. Haas; Institut für Mikroelektronik, 2005, oral examination: 2005-04-29. BibTeX

Diploma and Master Theses (authored and supervised)

2.	W. H. Zisser: "Untersuchung an Kupferkristallen unter Zuhilfenahme von MD Simulationen"; Supervisor: E. Langer, H. Ceric; Institut für Mikroelektronik, 2011, final examination: 2011-10-12. BibTeX
1.	H. Ceric: "Analyse von WDM-LAN Zugriffsprotokollen unter Zuhilfenahme von Semi-Markov-Modellen"; Supervisor: K. Bengi, H.R. van As; E 388, 2000, . BibTeX

Scientific Reports

6.	H. Ceric, Ph. Hehenberger, G. Milovanovic, V. Sverdlov, M. Vasicek, S. Selberherr: "VISTA Status Report I"; (2009), 30 page(s) . BibTeX
5.	H. Ceric, T. Grasser, R. Orio, M. Pourfath, M. Vasicek, S. Selberherr: "VISTA Status Report I"; (2008), 38 page(s) . BibTeX
4.	H. Ceric, S. Dhar, G. Karlowatz, L. Li, M. Pourfath, S. Selberherr: "VISTA Status Report I"; (2007), 29 page(s) . BibTeX
3.	H. Ceric, M. Karner, A. Nentchev, P. Schwaha, E. Ungersböck, S. Selberherr: "VISTA Status Report II"; (2005), 29 page(s) . BibTeX
2.	H. Ceric, S. Holzer, A. Sheikholeslami, T. Ayalew, R. Wittmann, S. Selberherr: "VISTA Status Report I"; (2004), 28 page(s) . BibTeX
1.	H. Ceric, K. Dragosits, A. Gehring, S. Smirnov, V. Palankovski, S. Selberherr: "VISTA Status Report II"; (2002), 35 page(s) . BibTeX