Publications Lukas Cvitkovich
13 recordsPublications in Scientific Journals
3. | Wilhelmer, C., Waldhör, D., Cvitkovich, L., Milardovich, D., Waltl, M., Grasser, T. (2023). Over- And Undercoordinated Atoms as a Source of Electron and Hole Traps in Amorphous Silicon Nitride (A-Si3N4). Nanomaterials, 13(16), Article 2286. https://doi.org/10.3390/nano13162286 (reposiTUm) | |
2. | Wilhelmer, C., Waldhoer, D., Jech, M., El-Sayed, A.-M. B., Cvitkovich, L., Waltl, M., Grasser, T. (2022). Ab Initio Investigations in Amorphous Silicon Dioxide: Proposing a Multi-State Defect Model for Electron and Hole Capture. Microelectronics Reliability, 139(114801), 114801. https://doi.org/10.1016/j.microrel.2022.114801 (reposiTUm) | |
1. | L. Cvitkovich, D. Zocco, Gaku Eguchi, M. Waas, R. Svagera, R. Mondal, A. Thamizhavel, S. Paschen, M. Stöger-Pollach: "Anisotropic Physical Properties of the Kondo Semimetal CeCu1.11As2"; JPS Conference Proceedings, 30 (2020), 011020; 1 - 6. | |
Talks and Poster Presentations (with Proceedings-Entry)
7. | Wilhelmer, C., Waldhör, D., Cvitkovich, L., Waltl, M., Grasser, T. (2023). Ab Initio Investigations of Electron and Hole Trapping Processes of H Induced Defects in Amorphous SiO₂. In The 14th International Conference on SiO₂, Dielectrics and Related Devices : Book of Abstracts (pp. 18–19), Palermo, Italy. (reposiTUm) | |
6. | Wilhelmer, C., Waldhör, D., Milardovich, D., Cvitkovich, L., Waltl, M., Grasser, T. (2023). Intrinsic Electron Trapping in Amorphous Silicon Nitride (A-Si3N4:H). In 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 149–152), Kobe, Japan. https://doi.org/10.23919/SISPAD57422.2023.10319493 (reposiTUm) | |
5. | Cvitkovich, L., Waldhör, D., El-Sayed, A., Jech, M., Wilhelmer, C., Grasser, T. (2022). Ab-Initio Modeling of the Initial Stages of Si(100) Thermal Oxidation. In PSI-K 2022: abstracts book (p. 209), Lausanne, Schwitzerland. (reposiTUm) | |
4. | Wilhelmer, C., Waldhör, D., Jech, M., El-Sayed, A., Cvitkovich, L., Waltl, M., Grasser, T. (2022). Ab-Initio Study of Multi-State Defects in Amorphous SiO2. In PSI-K 2022: abstracts book (p. 264), Lausanne, Schwitzerland. (reposiTUm) | |
3. | Cvitkovich, L., Jech, M., Waldhör, D., El-Sayed, A., Wilhelmer, C., Grasser, T. (2021). Multiscale Modeling Study of Native Oxide Growth on a Si(100) Surface. In ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC), Montreux, Austria. https://doi.org/10.1109/essderc53440.2021.9631790 (reposiTUm) | |
2. | Wilhelmer, C., Jech, M., Waldhoer, D., El-Sayed, A., Cvitkovich, L., Grasser, T. (2021). Statistical Ab Initio Analysis of Electron Trapping Oxide Defects in the Si/SiO2 Network. In ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC), Montreux, Austria. https://doi.org/10.1109/essderc53440.2021.9631833 (reposiTUm) | |
1. | Cvitkovich, L., Zocco, D., Eguchi, G., Waas, M., Svagera, R., Stöger, B., Mondal, R., Thamizhavel, A., Paschen, S. (2020). Anisotropic Physical Properties of the Kondo Semimetal CeCu₁.₁₁As₂. In Proceedings of the International Conference on Strongly Correlated Electron Systems (SCES2019), Okayama, Japan. https://doi.org/10.7566/jpscp.30.011020 (reposiTUm) | |
Talks and Poster Presentations (without Proceedings-Entry)
2. | Wilhelmer, C., Milardovich, D., Waldhör, D., Cvitkovich, L., Waltl, M., Grasser, T. (2023, May 29). Charged Instrinsic Defect States in Amorphous Si3N4 European Materials Research Society (E-MRS) Spring Meeting 2023, Strasbourg, France. (reposiTUm) | |
1. | Wilhelmer, C., Milardovich, D., Waldhör, D., Cvitkovich, L., Waltl, M., Grasser, T. (2023, May 30). Intrinsic Charge Trapping Sites in Amorphous Si₃N₄ European Materials Research Society (E-MRS) Spring Meeting 2023, Strasbourg, France. (reposiTUm) | |
Diploma and Master Theses (authored and supervised)
1. | Cvitkovich, L. (2019). Physical Properties of CeCuAs2 Technische Universität Wien. https://doi.org/10.34726/hss.2019.66564 (reposiTUm) | |