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Publications Siddhartha Dhar

22 records

Publications in Scientific Journals

7.  E. Ungersböck, W. Gös, S. Dhar, H. Kosina, S. Selberherr:
"The Effect of Uniaxial Stress on Band Structure and Electron Mobility of Silicon";
Mathematics and Computers in Simulation, 79 (2008), 4; 1071 - 1077. https://doi.org/10.1016/j.matcom.2007.10.004

6.  V. Sverdlov, G. Karlowatz, S. Dhar, H. Kosina, S. Selberherr:
"Two-Band k.p Model for the Conduction Band in Silicon: Impact of Strain and Confinement on Band Structure and Mobility";
Solid-State Electronics, 52 (2008), 10; 1563 - 1568. https://doi.org/10.1016/j.sse.2008.06.019

5.  S. Dhar, E. Ungersböck, H. Kosina, T. Grasser, S. Selberherr:
"Electron Mobility Model for <110> Stressed Silicon Including Strain-Dependent Mass";
IEEE Transactions on Nanotechnology, 6 (2007), 1; 97 - 100. https://doi.org/10.1109/TNANO.2006.888533

4.  E. Ungersböck, S. Dhar, G. Karlowatz, H. Kosina, S. Selberherr:
"Physical Modeling of Electron Mobility Enhancement for Arbitrarily Strained Silicon";
Journal of Computational Electronics, 6 (2007), 1-3; 55 - 58. https://doi.org/10.1007/s10825-006-0047-0

3.  E. Ungersböck, S. Dhar, G. Karlowatz, V. Sverdlov, H. Kosina, S. Selberherr:
"The Effect of General Strain on the Band Structure and Electron Mobility of Silicon";
IEEE Transactions on Electron Devices, 54 (2007), 9; 2183 - 2190. https://doi.org/10.1109/TED.2007.902880

2.  S. Dhar, H. Kosina, G. Karlowatz, E. Ungersböck, T. Grasser, S. Selberherr:
"High-Field Electron Mobility Model for Strained-Silicon Devices";
IEEE Transactions on Electron Devices, 53 (2006), 12; 3054 - 3062. https://doi.org/10.1109/TED.2006.885639

1.  S. Dhar, H. Kosina, V. Palankovski, E. Ungersböck, S. Selberherr:
"Electron Mobility Model for Strained-Si Devices";
IEEE Transactions on Electron Devices, 52 (2005), 4; 527 - 533. https://doi.org/10.1109/TED.2005.844788

Talks and Poster Presentations (with Proceedings-Entry)

11.  V. Sverdlov, G. Karlowatz, S. Dhar, H. Kosina, S. Selberherr:
"Two-Band k·p Model for the Conduction Band in Silicon: Impact of Strain and Confinement on Band Structure and Mobility";
Talk: International Semiconductor Device Research Symposium (ISDRS), Maryland; 2007-12-12 - 2007-12-14; in: "2007 International Semiconductor Device Research Symposium", (2007), ISBN: 978-1-4244-1892-3; 2 pages.

10.  S. Dhar, H. Kosina, G. Karlowatz, E. Ungersböck, T. Grasser, S. Selberherr:
"A Tensorial High-Field Electron Mobility Model for Strained Silicon";
Poster: International SiGe Technology and Device Meeting (ISTDM), Princeton; 2006-05-15 - 2006-05-17; in: "2006 International SiGe Technology and Device Meeting Conference Digest", (2006), ISBN: 1-4244-0461-4; 72 - 73.

9.  S. Dhar, E. Ungersböck, H. Kosina, T. Grasser, S. Selberherr:
"Analytical Modeling of Electron Mobility in Strained Germanium";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 2006-09-06 - 2006-09-08; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5; 39 - 42. https://doi.org/10.1109/SISPAD.2006.282833

8.  S. Dhar, E. Ungersböck, H. Kosina, T. Grasser, S. Selberherr:
"Electron Mobility Model for <110> Stressed Si Including Strain-Dependent Mass";
Poster: Silicon Nanoelectronics Workshop, Honolulu; 2006-06-11 - 2006-06-12; in: "Abstracts IEEE 2006 Silicon Nanoelectronics Workshop", (2006), 153 - 154.

7.  S. Dhar, E. Ungersböck, M. Nedjalkov, V. Palankovski:
"Monte Carlo Simulation of the Electron Mobility in Strained Silicon";
Talk: International Scientific and Applied Science Conference (ET), Sozopol; 2006-09-20 - 2006-09-22; in: "The Fifteenth International Scientific and Applied Science Conference Electronics ET'2006 Proceedings of the Conference Book 2", (2006), ISBN: 954-438-565-7; 169 - 173.

6.  E. Ungersböck, S. Dhar, G. Karlowatz, H. Kosina, S. Selberherr:
"Physical Modeling of Electron Mobility Enhancement for Arbitrarily Strained Silicon";
Poster: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 2006-05-25 - 2006-05-27; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1; 141 - 142.

5.  S. Dhar, H. Kosina, V. Palankovski, E. Ungersböck, S. Selberherr:
"A Physically-Based Electron Mobility Model for Strained Si Devices";
Talk: The Nanotechnology Conference and Trade Show, Anaheim; 2005-05-08 - 2005-05-12; in: "NSTI Nanotech Technical Proceedings", Vol. 3 (CDROM ISBN 0-9767985-4-9) (2005), ISBN: 0-9767985-2-2; 13 - 16.

4.  S. Dhar, G. Karlowatz, E. Ungersböck, H. Kosina, S. Selberherr:
"Modeling of Velocity-Field Characteristics in Strained Silicon";
Poster: International Workshop on the Physics of Semiconductor Devices (IWPSD), New Dehli; 2005-12-13 - 2005-12-17; in: "Proceedings of the XIII International Workshop on Physics of Semiconductor Devices", Vol. 2 (2005), ISBN: 81-7764-947-7; 1060 - 1063.

3.  S. Dhar, G. Karlowatz, E. Ungersböck, H. Kosina:
"Numerical and Analytical Modeling of the High-Field Electron Mobility in Strained Silicon";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5; 223 - 226. https://doi.org/10.1109/SISPAD.2005.201513

2.  V. Palankovski, S. Dhar, H. Kosina, S. Selberherr:
"Improved Carrier Transport in Strained Si/Ge Devices";
Talk: Asia Pacific Microwave Conference (APMC), New Delhi (invited); 2004-12-15 - 2004-12-18; in: "Asia Pacific Microwave Conference 2004, Abstracts and Proceedings (CDROM)", (2004), ISBN: 81-7764-722-9; 4 pages.

1.  S. Dhar, H. Kosina, V. Palankovski, E. Ungersböck, S. Selberherr:
"Modeling of Electron Mobility in Strained Si Devices";
Talk: Semiconductor Advances for Future Electronics (SAFE), Veldhoven, Netherlands; 2004-11-25 - 2004-11-26; in: "Proceedings of SAFE 2004", Technology Foundation, Utrecht, (2004), ISBN: 90-73461-43-x; 793 - 796. https://doi.org/10.13140/2.1.1839.7126

Doctor's Theses (authored and supervised)

1.  S. Dhar:
"Analytical Mobility Models for Strained Silicon-Based Devices";
Supervisor, Reviewer: H. Kosina, G. Magerl; Institut für Mikroelektronik, 2007; oral examination: 2007-08-30. https://doi.org/10.34726/hss.2007.9404

Scientific Reports

3.  D. Grützmacher, S. Dhar, G. Milovanovic, T. Grasser, H. Kosina:
"Disposable Dot Field Effect Transistor for High Speed Si Integrated Circuits";
Report for European Commission; 2007; 107 pages.

2.  H. Ceric, S. Dhar, G. Karlowatz, L. Li, M. Pourfath, S. Selberherr:
"VISTA Status Report June 2007";
2007; 29 pages.

1.  S. Dhar, L. Li, M. Pourfath, M. Spevak, V. Sverdlov, S. Selberherr:
"VISTA Status Report June 2006";
2006; 32 pages.