Publications Gesualdo Donnarumma
4 records
| 1. | V. Palankovski, G. Donnarumma, J. Kuzmik: "Degradation Study of Single and Double-Heterojunction InAlN/GaN HEMTs by Two-Dimensional Simulation"; in "Gallium Nitride and Silicon Carbide Power Technologies 2, Vol. 50, No. 3", issued by The Electrochemical Society; R. Garg, K. Shenai (ed); ECS Transactions, 2012, ISBN: 978-1-60768-351-3, 223 - 228 doi:10.1149/05003.0223ecst. BibTeX |
| 3. | M. Molnar, G. Donnarumma, V. Palankovski, J. Kuzmik, D. Donoval, J. Kovac, S. Selberherr: "Electrothermal Analysis of In0.12Al0.88N/GaN HEMTs"; Talk: International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM), Smolenice, Slovakia; 2012-11-11 - 2012-11-15; in "Proceedings of the 9th International ASDAM", (2012), ISBN: 978-1-4673-1195-3, 55 - 58 doi:10.1109/ASDAM.2012.6418556. BibTeX |
| 2. | G. Donnarumma, V. Palankovski, S. Selberherr: "Influence of Bandgap Narrowing and Carrier Lifetimes on the Forward Current-Voltage Characteristics of a 4H-SiC p-i-n Diode"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 2012-09-05 - 2012-09-07; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2, 125 - 128. BibTeX |
| 1. | M. Molnar, G. Donnarumma, V. Palankovski, J. Kuzmik, D. Donoval, J. Kovac, S. Selberherr: "Characterization, Modeling and Simulation of In0.12Al0.88N/GaN HEMTs"; Talk: Applied Physics of Condensed Matter (APCOM), High Tatras, Slovakia; 2012-06-20 - 2012-06-22; in "Proceedings of the 18th International Conference in the Series of the Solid State Workshops", (2012), 190 - 194. BibTeX |