Publications A. El-Sayed
29 records
| 12. | V. Sverdlov, A.-M. El-Sayed, H. Kosina, S. Selberherr: "Ballistic Conductance in a Topological 1T '-MoS2 Nanoribbon"; Semiconductors (Physics of Semiconductor Devices), 54, (invited) (2020), 1713 - 1715 doi:10.1134/S1063782620120386. BibTeX |
| 11. | V. Sverdlov, A.-M. El-Sayed, H. Kosina, S. Selberherr: "Conductance in a Nanoribbon of Topologically Insulating MoS2 in the 1T´ Phase"; IEEE Transactions on Electron Devices, 67, (2020), 4687 - 4690 doi:10.1109/TED.2020.3023921. BibTeX |
| 10. | M. Jech, A.-M. El-Sayed, S. E. Tyaginov, A. Shluger, T. Grasser: "Ab Initio Treatment of Silicon-Hydrogen Bond Rupture at Si/SiO2 Interfaces"; Physical Review B, 100, (2019), 195302 doi:10.1103/PhysRevB.100.195302. BibTeX |
| 9. | A. Makarov, B. Kaczer, A. Chasin, M. Vandemaele, E. Bury, M. Jech, A. Grill, G. Hellings, A.-M. El-Sayed, T. Grasser, D. Linten, S. E. Tyaginov: "Bi-Modal Variability of nFinFET Characteristics During Hot-Carrier Stress: A Modeling Approach"; IEEE Electron Device Letters, 40, (2019), 1579 - 1582 doi:10.1109/LED.2019.2933729. BibTeX |
| 8. | A. Makarov, B. Kaczer, Ph. Roussel, A. Chasin, A. Grill, M. Vandemaele, G. Hellings, A.-M. El-Sayed, T. Grasser, D. Linten, S. E. Tyaginov: "Stochastic Modeling of the Impact of Random Dopants on Hot-Carrier Degradation in n-FinFETs"; IEEE Electron Device Letters, 40, (2019), 870 - 873 doi:10.1109/LED.2019.2913625. BibTeX |
| 7. | A.-M. El-Sayed, M. Watkins, T. Grasser, A. Shluger: "Effect of Electric Field on Migration of Defects in Oxides: Vacancies and Interstitials in Bulk MgO"; Physical Review B, 98, (2018), 064102 doi:10.1103/PhysRevB.98.064102. BibTeX |
| 6. | W. Gös, Y. Wimmer, A.-M. El-Sayed, G. Rzepa, M. Jech, A. Shluger, T. Grasser: "Identification of Oxide Defects in Semiconductor Devices: A Systematic Approach Linking DFT to Rate Equations and Experimental Evidence"; Microelectronics Reliability, 87, (2018), 286 - 320 doi:10.1016/j.microrel.2017.12.021. BibTeX |
| 5. | J. Strand, K. Moloud, A.-M. El-Sayed, V. Afanas´Ev, A. Shluger: "Intrinsic Charge Trapping in Amorphous Oxide Films: Status and Challenges"; Journal of Physics: Condensed Matter, 30, (2018), 233001 doi:10.1088/1361-648X/aac005. BibTeX |
| 4. | Y. Wimmer, A.-M. El-Sayed, W. Gös, T. Grasser, A. Shluger: "Role of Hydrogen in Volatile Behaviour of Defects in SiO2-Based Electronic Devices"; Proceedings of the Royal Society A - Mathematical, Physical and Engineering Sciences, 472, (invited) (2016), 1 - 23 doi:10.1098/rspa.2016.0009. BibTeX |
| 3. | A. El-Sayed, M. Watkins, T. Grasser, V. Afanas´Ev, A. Shluger: "Hole Trapping at Hydrogenic Defects in Amorphous Silicon Dioxide"; Microelectronic Engineering, 147, (2015), 141 - 144 doi:10.1016/j.mee.2015.04.073. BibTeX |
| 2. | A. El-Sayed, M. Watkins, T. Grasser, V. Afanas´Ev, A. Shluger: "Hydrogen-Induced Rupture of Strained Si-O Bonds in Amorphous Silicon Dioxide"; Physical Review Letters, 114, (2015), 115503-1 - 115503-5 doi:10.1103/PhysRevLett.114.115503. BibTeX |
| 1. | A. El-Sayed, Y. Wimmer, W. Gös, T. Grasser, V. Afanas´Ev, A. Shluger: "Theoretical Models of Hydrogen-Induced Defects in Amorphous Silicon Dioxide"; Physical Review B, 92, (2015), 014107-1 - 014107-11 doi:10.1103/PhysRevB.92.014107. BibTeX |
| 2. | V. Sverdlov, A.-M. El-Sayed, S. Selberherr: "Subband Structure and Ballistic Conductance of a Molybdenum Disulfide Nanoribbon in Topological 1T´ Phase: A k·p Study"; in "Proceedings of the 27st International Conference Mixed Design of Integrated Circuits and Systems", A. Napieralski (ed); IEEE, 2020, ISBN: 978-83-63578-17-6, 168 - 171 doi:10.23919/MIXDES49814.2020.9155676. BibTeX |
| 1. | D. Waldhör, A.-M. El-Sayed, Y. Wimmer, M. Waltl, T. Grasser: "Atomistic Modeling of Oxide Defects"; in "Noise in Nanoscale Semiconductor Devices", T. Grasser (ed); Springer International Publishing, 2020, ISBN: 978-3-030-37499-0, 609 - 648 doi:10.1007/978-3-030-37500-3_18. BibTeX |
| 15. | V. Sverdlov, A.-M. El-Sayed, H. Kosina, S. Selberherr: "Ballistic Conductance in a Topological 1T´-MoS2 Nanoribbon"; Poster: International Symposium on Nanostructures: Physics and Technology (NANO), Minsk, Belarus - virtual; 2020-09-28 - 2020-10-02; in "Proceedings of the International Symposium on Nanostructures: Physics and Technology (NANO)", (2020), ISBN: 978-5-93634-066-6, 200 - 201. BibTeX |
| 14. | V. Sverdlov, A.-M. El-Sayed, S. Selberherr: "Subband Structure and Ballistic Conductance of a Molybdenum Disulfide Nanoribbon in Topological 1T´ Phase: A k∙p Study"; Talk: International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES), Lodz, Poland - virtual; 2020-06-25 - 2020-06-27; in "Book of Abstracts of the International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES)", (2020), 58. BibTeX |
| 13. | S. Tyaginov, A. El-Sayed, A. Makarov, A. Chasin, H. Arimura, M. Vandemaele, M. Jech, E. Capogreco, L. Witters, A. Grill, A. De Keersgieter, G. Eneman, D. Linten, B. Kaczer: "Understanding and Physical Modeling Superior Hot-Carrier Reliability of Ge pNWFETs"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 2019-12-07 - 2019-12-11; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2019), ISBN: 978-1-7281-4032-2, 498 - 501 doi:10.1109/IEDM19573.2019.8993644. BibTeX |
| 12. | D. Waldhör, Y. Wimmer, A.-M. El-Sayed, W. Goes, M. Waltl, T. Grasser: "Minimum Energy Paths for Non-Adiabatic Charge Transitions in Oxide Defects"; Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2019-10-13 - 2019-10-17; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2019), 1 - 5 doi:10.1109/IIRW47491.2019.8989889. BibTeX |
| 11. | A. Makarov, B. Kaczer, Ph. Roussel, A. Chasin, M. Vandemaele, G. Hellings, A.-M. El-Sayed, M. Jech, T. Grasser, D. Linten, S. E. Tyaginov: "Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants"; Talk: European Solid-State Device Research Conference (ESSDERC), Krakow, Poland; 2019-09-23 - 2019-09-26; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2019), ISBN: 978-1-7281-1539-9, 262 - 265 doi:10.1109/ESSDERC.2019.8901721. BibTeX |
| 10. | A. Makarov, B. Kaczer, Ph. Roussel, A. Chasin, M. Vandemaele, G. Hellings, A.-M. El-Sayed, M. Jech, T. Grasser, D. Linten, S. E. Tyaginov: "Simulation Study: the Effect of Random Dopants and Random Traps on Hot-Carrier Degradation in nFinFETs"; Talk: International Conference on Solid State Devices and Materials (SSDM), Nagoya, Japan; 2019-09-02 - 2019-09-05; in "Extended Abstracts of the International Conference on Solid State Devices and Materials (SSDM)", (2019), 609 - 610. BibTeX |
| 9. | S. E. Tyaginov, A. Chasin, A. Makarov, A.-M. El-Sayed, M. Jech, A. De Keersgieter, G. Eneman, M. Vandemaele, J. Franco, D. Linten, B. Kaczer: "Physics-based Modeling of Hot-Carrier Degradation in Ge NWFETs"; Talk: International Conference on Solid State Devices and Materials (SSDM), Nagoya, Japan; 2019-09-02 - 2019-09-05; in "Extended Abstracts of the International Conference on Solid State Devices and Materials (SSDM)", (2019), 565 - 566. BibTeX |
| 8. | A. Makarov, B. Kaczer, Ph. Roussel, A. Chasin, A. Grill, M. Vandemaele, G. Hellings, A.-M. El-Sayed, T. Grasser, D. Linten, S. E. Tyaginov: "Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs"; Talk: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2019-03-31 - 2019-04-04; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2019), ISBN: 978-1-5386-9504-3, doi:10.1109/IRPS.2019.8720584. BibTeX |
| 7. | S. E. Tyaginov, M. Jech, G. Rzepa, A. Grill, A.-M. El-Sayed, G. Pobegen, A. Makarov, T. Grasser: "Border Trap Based Modeling of SiC Transistor Transfer Characteristics"; Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2018-10-07 - 2018-10-11; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2018), ISBN: 978-1-5386-6039-3, doi:10.1109/IIRW.2018.8727083. BibTeX |
| 6. | T. Grasser, M. Waltl, G. Rzepa, W. Gös, Y. Wimmer, A.-M. El-Sayed, A. Shluger, H. Reisinger, B. Kaczer: "The "Permanent" Component of NBTI Revisited: Saturation, Degradation-Reversal, and Annealing"; Talk: International Reliability Physics Symposium (IRPS), Pasadena, CA, USA; 2016-04-17 - 2016-04-21; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2016), 5A-2-1 - 5A-2-8 doi:10.1109/IRPS.2016.7574504. BibTeX |
| 5. | T. Grasser, M. Waltl, Y. Wimmer, W. Gös, R. Kosik, G. Rzepa, H. Reisinger, G. Pobegen, A.-M. El-Sayed, A. Shluger, B. Kaczer: "Gate-Sided Hydrogen Release as the Origin of "Permanent" NBTI Degradation: From Single Defects to Lifetimes"; Talk: IEEE International Electron Devices Meeting (IEDM), Washington, DC, USA; 2015-12-07 - 2015-12-09; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2015), 535 - 538. BibTeX |
| 4. | Y. Wimmer, W. Gös, A.-M. El-Sayed, A. Shluger, T. Grasser: "A Density-Functional Study of Defect Volatility in Amorphous Silicon Dioxide"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 2015-09-09 - 2015-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7860-4, 44 - 47 doi:10.1109/SISPAD.2015.7292254. BibTeX |
| 3. | Y. Wimmer, W. Gös, A.-M. El-Sayed, A. Shluger, T. Grasser: "On the Validity of the Harmonic Potential Energy Surface Approximation for Nonradiative Multiphonon Charge Transitions in Oxide Defects"; Talk: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 2015-09-02 - 2015-09-04; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2015), ISBN: 978-0-692-50554-0, 97 - 98. BibTeX |
| 2. | T. Grasser, M. Waltl, W. Gös, Y. Wimmer, A. El-Sayed, A. Shluger, B. Kaczer: "On the Volatility of Oxide Defects: Activation, Deactivation, and Transformation"; Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2015-04-19 - 2015-04-23; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2015), 5A.3.1 - 5A.3.8 doi:10.1109/IRPS.2015.7112739. BibTeX |
| 1. | T. Grasser, W. Gös, Y. Wimmer, F. Schanovsky, G. Rzepa, M. Waltl, K. Rott, H. Reisinger, V. Afanas´Ev, A. Stesmans, A. El-Sayed, A. Shluger: "On the Microscopic Structure of Hole Traps in pMOSFETs"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 2014-12-15 - 2014-12-17; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2014), ISBN: 978-1-4799-8001-7, 530 - 533 doi:10.1109/IEDM.2014.7047093. BibTeX |