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Publications A. El-Sayed

49 records


Publications in Scientific Journals

16. V. Sverdlov, H. Seiler, A.-M. El-Sayed, Yu. Illarionov, H. Kosina:
"Edge Modes and Their Conductance in Narrow Nanoribbons of 2D Materials in a Topological Phase";
Solid-State Electronics, 193, (invited) (2022), 108266-1 - 108266-8 doi:10.1016/j.sse.2022.108266. BibTeX
15. C. Wilhelmer, D. Waldhör, M. Jech, A.-M. El-Sayed, L. Cvitkovich, M. Waltl, T. Grasser:
"Ab initio investigations in amorphous silicon dioxide: Proposing a multi-state defect model for electron and hole capture";
Microelectronics Reliability, 139, (2022), doi:10.1016/j.microrel.2022.114801. BibTeX
14. M. Jech, A.-M. El-Sayed, S. E. Tyaginov, D. Waldhör, F. Bouakline, P. Saalfrank, D. Jabs, C. Jungemann, M. Waltl, T. Grasser:
"Quantum Chemistry Treatment of Silicon-Hydrogen Bond Rupture by Nonequilibrium Carriers in Semiconductor Devices";
Physical Review Applied, 16, (2021), 014026 -1 - 014026 -24 doi:10.1103/PhysRevApplied.16.014026. BibTeX
13. V. Sverdlov, A.-M. El-Sayed, H. Seiler, H. Kosina, S. Selberherr:
"Subbands in a Nanoribbon of Topologically Insulating MoS2 in the 1T′ Phase";
Solid-State Electronics, 184, (invited) (2021), 108081-1 - 108081-9 doi:10.1016/j.sse.2021.108081. BibTeX
12. V. Sverdlov, A.-M. El-Sayed, H. Kosina, S. Selberherr:
"Ballistic Conductance in a Topological 1T '-MoS2 Nanoribbon";
Semiconductors (Physics of Semiconductor Devices), 54, (invited) (2020), 1713 - 1715 doi:10.1134/S1063782620120386. BibTeX
11. V. Sverdlov, A.-M. El-Sayed, H. Kosina, S. Selberherr:
"Conductance in a Nanoribbon of Topologically Insulating MoS2 in the 1T´ Phase";
IEEE Transactions on Electron Devices, 67, (2020), 4687 - 4690 doi:10.1109/TED.2020.3023921. BibTeX
10. M. Jech, A.-M. El-Sayed, S. E. Tyaginov, A. Shluger, T. Grasser:
"Ab Initio Treatment of Silicon-Hydrogen Bond Rupture at Si/SiO2 Interfaces";
Physical Review B, 100, (2019), 195302 doi:10.1103/PhysRevB.100.195302. BibTeX
9. A. Makarov, B. Kaczer, A. Chasin, M. Vandemaele, E. Bury, M. Jech, A. Grill, G. Hellings, A.-M. El-Sayed, T. Grasser, D. Linten, S. E. Tyaginov:
"Bi-Modal Variability of nFinFET Characteristics During Hot-Carrier Stress: A Modeling Approach";
IEEE Electron Device Letters, 40, (2019), 1579 - 1582 doi:10.1109/LED.2019.2933729. BibTeX
8. A. Makarov, B. Kaczer, Ph. Roussel, A. Chasin, A. Grill, M. Vandemaele, G. Hellings, A.-M. El-Sayed, T. Grasser, D. Linten, S. E. Tyaginov:
"Stochastic Modeling of the Impact of Random Dopants on Hot-Carrier Degradation in n-FinFETs";
IEEE Electron Device Letters, 40, (2019), 870 - 873 doi:10.1109/LED.2019.2913625. BibTeX
7. A.-M. El-Sayed, M. Watkins, T. Grasser, A. Shluger:
"Effect of Electric Field on Migration of Defects in Oxides: Vacancies and Interstitials in Bulk MgO";
Physical Review B, 98, (2018), 064102 doi:10.1103/PhysRevB.98.064102. BibTeX
6. W. Gös, Y. Wimmer, A.-M. El-Sayed, G. Rzepa, M. Jech, A. Shluger, T. Grasser:
"Identification of Oxide Defects in Semiconductor Devices: A Systematic Approach Linking DFT to Rate Equations and Experimental Evidence";
Microelectronics Reliability, 87, (2018), 286 - 320 doi:10.1016/j.microrel.2017.12.021. BibTeX
5. J. Strand, K. Moloud, A.-M. El-Sayed, V. Afanas´Ev, A. Shluger:
"Intrinsic Charge Trapping in Amorphous Oxide Films: Status and Challenges";
Journal of Physics: Condensed Matter, 30, (2018), 233001 doi:10.1088/1361-648X/aac005. BibTeX
4. Y. Wimmer, A.-M. El-Sayed, W. Gös, T. Grasser, A. Shluger:
"Role of Hydrogen in Volatile Behaviour of Defects in SiO2-Based Electronic Devices";
Proceedings of the Royal Society A - Mathematical, Physical and Engineering Sciences, 472, (invited) (2016), 1 - 23 doi:10.1098/rspa.2016.0009. BibTeX
3. A. El-Sayed, M. Watkins, T. Grasser, V. Afanas´Ev, A. Shluger:
"Hole Trapping at Hydrogenic Defects in Amorphous Silicon Dioxide";
Microelectronic Engineering, 147, (2015), 141 - 144 doi:10.1016/j.mee.2015.04.073. BibTeX
2. A. El-Sayed, M. Watkins, T. Grasser, V. Afanas´Ev, A. Shluger:
"Hydrogen-Induced Rupture of Strained Si-O Bonds in Amorphous Silicon Dioxide";
Physical Review Letters, 114, (2015), 115503-1 - 115503-5 doi:10.1103/PhysRevLett.114.115503. BibTeX
1. A. El-Sayed, Y. Wimmer, W. Gös, T. Grasser, V. Afanas´Ev, A. Shluger:
"Theoretical Models of Hydrogen-Induced Defects in Amorphous Silicon Dioxide";
Physical Review B, 92, (2015), 014107-1 - 014107-11 doi:10.1103/PhysRevB.92.014107. BibTeX

Contributions to Books

5. A.-M. El-Sayed, H. Seiler, H. Kosina, M. Jech, D. Waldhör, V. Sverdlov:
"First Principles Evaluation of Topologically Protected Edge States in MoS$_{2}$ 1T′ Nanoribbons with Realistic Terminations";
in "Proceedings of the 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", B. Cretu (ed); IEEE, 2021, ISBN: 978-1-6654-3745-5, 1 - 4 doi:10.1109/EuroSOI-ULIS53016.2021.9560183. BibTeX
4. V. Sverdlov, H. Seiler, A.-M. El-Sayed, H. Kosina:
"Conductance due to the Edge Modes in Nanoribbons of 2D Materials in a Topological Phase";
in "Proceedings of the 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", B. Cretu (ed); IEEE, 2021, ISBN: 978-1-6654-3745-5, 1 - 4 doi:10.1109/EuroSOI-ULIS53016.2021.9560173. BibTeX
3. V. Sverdlov, A.-M. El-Sayed, S. Selberherr:
"Subband Structure and Ballistic Conductance of a Molybdenum Disulfide Nanoribbon in Topological 1T´ Phase: A k·p Study";
in "Proceedings of the 27st International Conference Mixed Design of Integrated Circuits and Systems", A. Napieralski (ed); IEEE, 2020, ISBN: 978-83-63578-17-6, 168 - 171 doi:10.23919/MIXDES49814.2020.9155676. BibTeX
2. V. Sverdlov, A.-M. El-Sayed, S. Selberherr, H. Kosina:
"Topologically Protected and Conventional Subbands in a 1T´-MoS2 Nanoribbon Channel";
in "Proceedings of the 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", B. Cretu (ed); IEEE, 2020, ISBN: 978-1-7281-8765-5, 1 - 4 doi:10.1109/EUROSOI-ULIS49407.2020.9365289. BibTeX
1. D. Waldhör, A.-M. El-Sayed, Y. Wimmer, M. Waltl, T. Grasser:
"Atomistic Modeling of Oxide Defects";
in "Noise in Nanoscale Semiconductor Devices", T. Grasser (ed); Springer International Publishing, 2020, ISBN: 978-3-030-37499-0, 609 - 648 doi:10.1007/978-3-030-37500-3_18. BibTeX

Talks and Poster Presentations (with Proceedings-Entry)

28. D. Milardovich, D. Waldhör, M. Jech, A.-M. El-Sayed, T. Grasser:
"Building Robust Machine Learning Force Fields by Composite Gaussian Approximation Potentials";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022), Granada, Spain; 2022-09-06 - 2022-09-08; in "SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet", (2022), 61 - 62. BibTeX
27. L. Cvitkovich, D. Waldhör, A.-M. El-Sayed, M. Jech, C. Wilhelmer, T. Grasser:
"Ab-Initio Modeling of the Initial Stages of Si(100) Thermal Oxidation";
Poster: Psi-K Conference (Psi-K) 2022, Lausanne, Schwitzerland; 2022-08-22 - 2022-08-25; in "PSI-K 2022: abstracts book", (2022), 209. BibTeX
26. D. Milardovich, M. Jech, D. Waldhör, A.-M. El-Sayed, T. Grasser:
"Machine Learning Prediction of Defect Structures in Amorphous Silicon Dioxide";
Talk: Psi-K Conference (Psi-K) 2022, Lausanne, Schwitzerland; 2022-08-22 - 2022-08-25; in "PSI-K 2022: abstracts book", (2022), 138. BibTeX
25. C. Wilhelmer, D. Waldhör, M. Jech, A.-M. El-Sayed, L. Cvitkovich, M. Waltl, T. Grasser:
"Ab-Initio Study of Multi-State Defects in Amorphous SiO2";
Talk: Psi-K Conference (Psi-K) 2022, Lausanne, Schwitzerland; 2022-08-22 - 2022-08-25; in "PSI-K 2022: abstracts book", (2022), 264. BibTeX
24. V. Sverdlov, H. Seiler, A.-M. El-Sayed, Yu. Illarionov, H. Kosina, S. Selberherr:
"Edge Modes in Narrow Nanoribbons of Transition Metal Dichalcogenides in a Topological 1T";
Talk: International Conference on Physics and its Application, San Francisco, USA; (invited) 2022-07-18 - 2022-07-21; in "International Conference on Physics and its Application 2022", (2022), 36 - 37. BibTeX
23. J. Franco, J. Marneffe, A. Vandooren, Y. Kimura, L. Nyns, Z. Wu, A.-M. El-Sayed, M. Jech, D. Waldhör, D. Claes, H. Arimura, L. Ragnarsson, V. Afanas´Ev, N. Horiguchi, D. Linten, T. Grasser, B. Kaczer:
"Atomic Hydrogen Exposure to Enable High-Quality Low-Temperature SiO2 with Excellent pMOS NBTI Reliability Compatible with 3D Sequential Tier Stacking";
Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 2021-12-12 - 2021-12-18; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2021), ISBN: 978-1-7281-8888-1, 31.2.1 - 31.2.4 doi:10.1109/IEDM13553.2020.9372054. BibTeX
22. A.-M. El-Sayed, H. Seiler, H. Kosina, S. Selberherr, V. Sverdlov:
"Ab-initio Calculations of Edge States in Topological 1T′ MoS2 Nanoribbons";
Talk: 2021 Workshop on Innovative Nanoscale Devices and Systems (WINDS2021), Hawaii, USA; 2021-11-28 - 2021-12-03; in "WINDS Book of Abstracts", (2021), ISBN: 978-3-9504738-3-4, 79 - 80. BibTeX
21. L. Cvitkovich, M. Jech, D. Waldhör, A.-M. El-Sayed, C. Wilhelmer, T. Grasser:
"Multiscale Modeling Study of Native Oxide Growth on a Si(100) Surface";
Talk: European Solid-State Device Research Conference (ESSDERC), Grenoble, France; 2021-09-13 - 2021-09-22; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2021), ISBN: 978-1-6654-3748-6, 235 - 238 doi:10.1109/ESSDERC53440.2021.9631790. BibTeX
20. D. Milardovich, M. Jech, D. Waldhör, A.-M. El-Sayed, T. Grasser:
"Machine Learning Prediction of Defect Structures in Amorphous Silicon Dioxide";
Talk: European Solid-State Device Research Conference (ESSDERC), Grenoble, France; 2021-09-13 - 2021-09-22; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2021), ISBN: 978-1-6654-3748-6, 239 - 242 doi:10.1109/ESSDERC53440.2021.9631837. BibTeX
19. V. Sverdlov, A.-M. El-Sayed, H. Kosina, S. Selberherr:
"Ballistic Conductance, k. p Hamiltonian, Nanoribbons, Subbands, Topological Insulators (TIs), Topologically Protected Edge States";
Talk: European Solid-State Device Research Conference (ESSDERC), Grenoble, France; 2021-09-13 - 2021-09-17; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC), TEDbrief Special Edition", (2021), . BibTeX
18. C. Wilhelmer, M. Jech, D. Waldhör, A.-M. El-Sayed, L. Cvitkovich, T. Grasser:
"Statistical Ab Initio Analysis of Electron Trapping Oxide Defects in the Si/SiO2 Network";
Talk: European Solid-State Device Research Conference (ESSDERC), Grenoble, France; 2021-09-13 - 2021-09-22; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2021), ISBN: 978-1-6654-3748-6, 243 - 246 doi:10.1109/ESSDERC53440.2021.9631833. BibTeX
17. A.-M. El-Sayed, H. Seiler, H. Kosina, V. Sverdlov:
"First Principles Approach to Study Topologically Protected Edge States in 1T′ MoS2 Nanoribbons";
Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France; 2021-09-01 - 2021-09-03; in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2021), 113 - 114. BibTeX
16. V. Sverdlov, H. Seiler, A.-M. El-Sayed, H. Kosina:
"Conductance of Edge Modes in Nanoribbons of 2D Materials in a Topological Phase";
Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France; 2021-09-01 - 2021-09-03; in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2021), 52 - 53. BibTeX
15. V. Sverdlov, A.-M. El-Sayed, H. Kosina, S. Selberherr:
"Ballistic Conductance in a Topological 1T´-MoS2 Nanoribbon";
Poster: International Symposium on Nanostructures: Physics and Technology (NANO), Minsk, Belarus - virtual; 2020-09-28 - 2020-10-02; in "Proceedings of the International Symposium on Nanostructures: Physics and Technology (NANO)", (2020), ISBN: 978-5-93634-066-6, 200 - 201. BibTeX
14. V. Sverdlov, A.-M. El-Sayed, S. Selberherr:
"Subband Structure and Ballistic Conductance of a Molybdenum Disulfide Nanoribbon in Topological 1T´ Phase: A k∙p Study";
Talk: International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES), Lodz, Poland - virtual; 2020-06-25 - 2020-06-27; in "Book of Abstracts of the International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES)", (2020), 58. BibTeX
13. S. Tyaginov, A. El-Sayed, A. Makarov, A. Chasin, H. Arimura, M. Vandemaele, M. Jech, E. Capogreco, L. Witters, A. Grill, A. De Keersgieter, G. Eneman, D. Linten, B. Kaczer:
"Understanding and Physical Modeling Superior Hot-Carrier Reliability of Ge pNWFETs";
Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 2019-12-07 - 2019-12-11; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2019), ISBN: 978-1-7281-4032-2, 498 - 501 doi:10.1109/IEDM19573.2019.8993644. BibTeX
12. D. Waldhör, Y. Wimmer, A.-M. El-Sayed, W. Goes, M. Waltl, T. Grasser:
"Minimum Energy Paths for Non-Adiabatic Charge Transitions in Oxide Defects";
Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2019-10-13 - 2019-10-17; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2019), 1 - 5 doi:10.1109/IIRW47491.2019.8989889. BibTeX
11. A. Makarov, B. Kaczer, Ph. Roussel, A. Chasin, M. Vandemaele, G. Hellings, A.-M. El-Sayed, M. Jech, T. Grasser, D. Linten, S. E. Tyaginov:
"Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants";
Talk: European Solid-State Device Research Conference (ESSDERC), Krakow, Poland; 2019-09-23 - 2019-09-26; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2019), ISBN: 978-1-7281-1539-9, 262 - 265 doi:10.1109/ESSDERC.2019.8901721. BibTeX
10. A. Makarov, B. Kaczer, Ph. Roussel, A. Chasin, M. Vandemaele, G. Hellings, A.-M. El-Sayed, M. Jech, T. Grasser, D. Linten, S. E. Tyaginov:
"Simulation Study: the Effect of Random Dopants and Random Traps on Hot-Carrier Degradation in nFinFETs";
Talk: International Conference on Solid State Devices and Materials (SSDM), Nagoya, Japan; 2019-09-02 - 2019-09-05; in "Extended Abstracts of the International Conference on Solid State Devices and Materials (SSDM)", (2019), 609 - 610. BibTeX
9. S. E. Tyaginov, A. Chasin, A. Makarov, A.-M. El-Sayed, M. Jech, A. De Keersgieter, G. Eneman, M. Vandemaele, J. Franco, D. Linten, B. Kaczer:
"Physics-based Modeling of Hot-Carrier Degradation in Ge NWFETs";
Talk: International Conference on Solid State Devices and Materials (SSDM), Nagoya, Japan; 2019-09-02 - 2019-09-05; in "Extended Abstracts of the International Conference on Solid State Devices and Materials (SSDM)", (2019), 565 - 566. BibTeX
8. A. Makarov, B. Kaczer, Ph. Roussel, A. Chasin, A. Grill, M. Vandemaele, G. Hellings, A.-M. El-Sayed, T. Grasser, D. Linten, S. E. Tyaginov:
"Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs";
Talk: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2019-03-31 - 2019-04-04; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2019), ISBN: 978-1-5386-9504-3, doi:10.1109/IRPS.2019.8720584. BibTeX
7. S. E. Tyaginov, M. Jech, G. Rzepa, A. Grill, A.-M. El-Sayed, G. Pobegen, A. Makarov, T. Grasser:
"Border Trap Based Modeling of SiC Transistor Transfer Characteristics";
Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2018-10-07 - 2018-10-11; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2018), ISBN: 978-1-5386-6039-3, doi:10.1109/IIRW.2018.8727083. BibTeX
6. T. Grasser, M. Waltl, G. Rzepa, W. Gös, Y. Wimmer, A.-M. El-Sayed, A. Shluger, H. Reisinger, B. Kaczer:
"The "Permanent" Component of NBTI Revisited: Saturation, Degradation-Reversal, and Annealing";
Talk: International Reliability Physics Symposium (IRPS), Pasadena, CA, USA; 2016-04-17 - 2016-04-21; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2016), 5A-2-1 - 5A-2-8 doi:10.1109/IRPS.2016.7574504. BibTeX
5. T. Grasser, M. Waltl, Y. Wimmer, W. Gös, R. Kosik, G. Rzepa, H. Reisinger, G. Pobegen, A.-M. El-Sayed, A. Shluger, B. Kaczer:
"Gate-Sided Hydrogen Release as the Origin of "Permanent" NBTI Degradation: From Single Defects to Lifetimes";
Talk: IEEE International Electron Devices Meeting (IEDM), Washington, DC, USA; 2015-12-07 - 2015-12-09; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2015), 535 - 538 doi:10.1109/IEDM.2015.7409739. BibTeX
4. Y. Wimmer, W. Gös, A.-M. El-Sayed, A. Shluger, T. Grasser:
"A Density-Functional Study of Defect Volatility in Amorphous Silicon Dioxide";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 2015-09-09 - 2015-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7860-4, 44 - 47 doi:10.1109/SISPAD.2015.7292254. BibTeX
3. Y. Wimmer, W. Gös, A.-M. El-Sayed, A. Shluger, T. Grasser:
"On the Validity of the Harmonic Potential Energy Surface Approximation for Nonradiative Multiphonon Charge Transitions in Oxide Defects";
Talk: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 2015-09-02 - 2015-09-04; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2015), ISBN: 978-0-692-50554-0, 97 - 98. BibTeX
2. T. Grasser, M. Waltl, W. Gös, Y. Wimmer, A. El-Sayed, A. Shluger, B. Kaczer:
"On the Volatility of Oxide Defects: Activation, Deactivation, and Transformation";
Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2015-04-19 - 2015-04-23; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2015), 5A.3.1 - 5A.3.8 doi:10.1109/IRPS.2015.7112739. BibTeX
1. T. Grasser, W. Gös, Y. Wimmer, F. Schanovsky, G. Rzepa, M. Waltl, K. Rott, H. Reisinger, V. Afanas´Ev, A. Stesmans, A. El-Sayed, A. Shluger:
"On the Microscopic Structure of Hole Traps in pMOSFETs";
Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 2014-12-15 - 2014-12-17; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2014), ISBN: 978-1-4799-8001-7, 530 - 533 doi:10.1109/IEDM.2014.7047093. BibTeX
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