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Publications Simone Fiorentini

48 records


Publications in Scientific Journals

11. J. Ender, S. Fiorentini, R. Orio, W. Goes, V. Sverdlov, S. Selberherr:
"Emerging CMOS Compatible Magnetic Memories and Logic";
IEEE Journal of the Electron Devices Society, 9, (invited) (2021), 456 - 463 doi:10.1109/JEDS.2021.3066679. BibTeX
10. J. Ender, R. Orio, S. Fiorentini, S. Selberherr, W. Goes, V. Sverdlov:
"Improving Failure Rates in Pulsed SOT-MRAM Switching by Reinforcement Learning";
Microelectronics Reliability, 126, (2021), 114231-1 - 114231-5 doi:10.1016/j.microrel.2021.114231. BibTeX
9. J. Ender, R. Orio, S. Fiorentini, S. Selberherr, W. Goes, V. Sverdlov:
"Reinforcement Learning Approach for Deterministic SOT-MRAM Switching";
Proceedings of SPIE, 11805, (invited) (2021), 1180519-1 - 1180519-8 doi:10.1117/12.2593937. BibTeX
8. S. Fiorentini, J. Ender, S. Selberherr, R. Orio, W. Goes, V. Sverdlov:
"Coupled Spin and Charge Drift-Diffusion Approach Applied to Magnetic Tunnel Junctions";
Solid-State Electronics, 186, (invited) (2021), 108103 doi:10.1016/j.sse.2021.108103. BibTeX
7. R. Orio, J. Ender, S. Fiorentini, W. Gös, S. Selberherr, V. Sverdlov:
"Numerical Analysis of Deterministic Switching of a Perpendicularly Magnetized Spin-Orbit Torque Memory Cell";
IEEE Journal of the Electron Devices Society, 9, (2021), 61 - 67 doi:10.1109/JEDS.2020.3039544. BibTeX
6. R. Orio, J. Ender, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov:
"Optimization of a Spin-Orbit Torque Switching Scheme Based on Micromagnetic Simulations and Reinforcement Learning";
Micromachines, 12, (2021), 443 doi:10.3390/mi12040443. BibTeX
5. R. Orio, J. Ender, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov:
"Two-Pulse Switching Scheme and Reinforcement Learning for Energy Efficient SOT-MRAM Simulations";
Solid-State Electronics, 185, (invited) (2021), 108075 doi:10.1016/j.sse.2021.108075. BibTeX
4. S. Fiorentini, J. Ender, M. Mohamedou, S. Selberherr, R. Orio, W. Goes, V. Sverdlov:
"Comprehensive Modeling of Coupled Spin-Charge Transport and Magnetization Dynamics in STT-MRAM Cells";
Proceedings of SPIE, 11470, (invited) (2020), 50 - 56 doi:10.1117/12.2567480. BibTeX
3. S. Fiorentini, R. Orio, S. Selberherr, J. Ender, W. Goes, V. Sverdlov:
"Analysis of Switching Under Fixed Voltage and Fixed Current in Perpendicular STT-MRAM";
IEEE Journal of the Electron Devices Society, 8, (invited) (2020), 1249 - 1256 doi:10.1109/JEDS.2020.3023577. BibTeX
2. R. Orio, A. Makarov, W. Goes, J. Ender, S. Fiorentini, V. Sverdlov:
"Two-Pulse Magnetic Field-Free Switching Scheme for Perpendicular SOT-MRAM with a Symmetric Square Free Layer";
Physica B: Condensed Matter, 578, (2020), 411743 doi:10.1016/j.physb.2019.411743. BibTeX
1. R. Orio, A. Makarov, S. Selberherr, W. Goes, J. Ender, S. Fiorentini, V. Sverdlov:
"Robust Magnetic Field-Free Switching of a Perpendicularly Magnetized Free Layer for SOT-MRAM";
Solid-State Electronics, 168, (2020), 107730-1 - 107730-7 doi:10.1016/j.sse.2019.107730. BibTeX

Contributions to Books

5. T. Hadámek, M. Bendra, S. Fiorentini, J. Ender, R. Orio, W. Goes, S. Selberherr, V. Sverdlov:
"Temperature Increase in MRAM at Writing: A Finite Element Approach";
in "Proceedings of the 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", B. Cretu (ed); IEEE, 2021, ISBN: 978-1-6654-3746-2, 1 - 4 doi:10.1109/EuroSOI-ULIS53016.2021.9560669. BibTeX
4. S. Fiorentini, J. Ender, S. Selberherr, R. Orio, W. Goes, V. Sverdlov:
"Comprehensive Modeling of Coupled Spin and Charge Transport through Magnetic Tunnel Junctions";
in "Proceedings of the 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", B. Cretu (ed); IEEE, 2020, ISBN: 978-1-7281-8765-5, 1 - 4 doi:10.1109/EUROSOI-ULIS49407.2020.9365497. BibTeX
3. S. Fiorentini, R. Orio, S. Selberherr, J. Ender, W. Gös, V. Sverdlov:
"Influence of Current Redistribution in Switching Models for Perpendicular STT-MRAM";
in "Advanced CMOS-Compatible Semiconductor Devices 19, Vol. 97, No. 5", issued by The Electrochemical Society; J. A. Martino, B.-Y. Nguyen, F. Gamiz, H. Ishii, J.-P. Raskin, S. Selberherr, E. Simoen (ed); ECS Transactions, 2020, ISBN: 978-1-62332-604-3, 159 - 164 doi:10.1149/09705.0159ecst. BibTeX
2. R. Orio, J. Ender, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov:
"Reduced Current Spin-Orbit Torque Switching of a Perpendicularly Magnetized Free Layer";
in "Proceedings of the 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", B. Cretu (ed); IEEE, 2020, ISBN: 978-1-7281-8765-5, 1 - 4 doi:10.1109/EUROSOI-ULIS49407.2020.9365283. BibTeX
1. R. Orio, A. Makarov, S. Selberherr, W. Goes, J. Ender, S. Fiorentini, V. Sverdlov:
"Efficient Magnetic Field-Free Switching of a Symmetric Perpendicular Magnetic Free Layer for Advanced SOT-MRAM";
in "Proceedings of the 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", IEEE Xplore, 2019, ISBN: 978-1-7281-1658-7, 1 - 4 doi:10.1109/EUROSOI-ULIS45800.2019.9041920. BibTeX

Talks and Poster Presentations (with Proceedings-Entry)

30. N. Jørstad, S. Fiorentini, W. Goes, V. Sverdlov:
"Efficient Finite Element Method Approach to Model Spin Orbit Torque MRAM";
Talk: International MOS-AK Workshop, Silicon Valley, USA; 2021-12-17 in "Proceedings of the 14th International MOS-AK Workshop", (2021), 1. BibTeX
29. S. Fiorentini, M. Bendra, J. Ender, R. Orio, S. Selberherr, W. Goes, V. Sverdlov:
"Design Support for Ultra-Scaled MRAM Cells";
Poster: IEEE International Electron Devices Meeting (IEDM), San Francisco, USA; 2021-12-13 - 2021-12-15; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM) Special Poster Session Dedicated to MRAM", (2021), 1 page(s) . BibTeX
28. J. Ender, S. Fiorentini, R. Orio, T. Hadámek, M. Bendra, W. Goes, S. Selberherr, V. Sverdlov:
"Advanced Modeling of Emerging MRAM: From Finite Element Methods to Machine Learning Approaches";
Talk: International Conference Micro- and Nanoelectronics (ICMNE), Moscow-Zvenigorod, Russia; (invited) 2021-10-04 - 2021-10-08; in "Proceedings of the International Conference Micro- and Nanoelectronics (ICMNE)", (2021), ISBN: 978-5-317-06675-8, . BibTeX
27. J. Ender, R. Orio, S. Fiorentini, S. Selberherr, W. Gös, V. Sverdlov:
"Improving Failure Rates in Pulsed SOT-MRAM Switching by Reinforcement Learning";
Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Bordeaux, France; 2021-10-04 - 2021-10-07; in "Proceedings of the 32nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2021), ISSN: 0026-2714, 1 - 4 doi:10.1016/j.microrel.2021.114231. BibTeX
26. M. Bendra, J. Ender, S. Fiorentini, T. Hadámek, R. Orio, W. Goes, S. Selberherr, V. Sverdlov:
"Finite Element Method Approach to MRAM Modeling";
Talk: Microelectroncs, Electronics, and Electronic Technologies (MIPRO), Opatija, Croatia; 2021-09-27 - 2021-10-01; in "MIPRO 2021 Proceedings", (2021), ISBN: 978-953-233-101-1, 70 - 73 doi:10.23919/MIPRO52101.2021.9597194. BibTeX
25. J. Ender, R. Orio, S. Fiorentini, S. Selberherr, W. Goes, V. Sverdlov:
"Reinforcement Learning Approach for Sub-Critical Current SOT-MRAM Switching Materials";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Dallas, Texas (USA); 2021-09-27 - 2021-09-29; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2021), . BibTeX
24. S. Fiorentini, J. Ender, R. Orio, S. Selberherr, W. Goes, V. Sverdlov:
"Spin and Charge Drift-Diffusion Approach to Torque Computation in Magnetic Tunnel Junctions";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Dallas, Texas (USA); 2021-09-27 - 2021-09-29; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2021), . BibTeX
23. J. Ender, R. Orio, S. Fiorentini, S. Selberherr, W. Goes, V. Sverdlov:
"Reinforcement Learning to Reduce Failures in SOT-MRAM Switching";
Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2021-09-15 - 2021-10-15; in "Proceedings of the IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2021), ISBN: 978-1-6654-3988-6, doi:10.1109/IPFA53173.2021.9617362. BibTeX
22. R. Orio, J. Ender, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov:
"Deterministic Spin-Orbit Switching Scheme for an Array of Perpendicular MRAM Cells Suitable for Large Scale Integration";
Talk: Trends in Magnetism (TMAG), Cefalù, Italy; 2021-09-06 - 2021-09-10; in "Proceedings of the Trends in Magnetism Conference (TMAG)", (2021), . BibTeX
21. T. Hadámek, M. Bendra, S. Fiorentini, J. Ender, R. Orio, W. Goes, S. Selberherr, V. Sverdlov:
"Temperature Increase in MRAM at Writing: A Finite Element Approach";
Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France; 2021-09-01 - 2021-09-03; in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2021), 133 - 134. BibTeX
20. J. Ender, S. Fiorentini, V. Sverdlov, W. Goes, R. Orio, S. Selberherr:
"Reinforcement Learning Approach for Deterministic SOT-MRAM Switching";
Talk: SPIE Spintronics, San Diego, CA, USA - virtual; (invited) 2021-08-01 - 2021-08-05; in "Proceedings of SPIE Spintronics", (2021), 11805-53. BibTeX
19. J. Ender, S. Fiorentini, S. Selberherr, W. Goes, V. Sverdlov:
"Advanced Modeling of Emerging Nonvolatile Magnetoresistive Devices";
Talk: International Workshop on Computational Nanotechnology (IWCN), Daejeon, Korea (Virtual); (invited) 2021-05-24 - 2021-06-06; in "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2021), ISBN: 978-89-89453-30-7, 45 - 46. BibTeX
18. S. Fiorentini, J. Ender, R. Orio, S. Selberherr, W. Goes, V. Sverdlov:
"Spin Drift-Diffusion Approach for the Computation of Torques in Multi-Layered Structures";
Talk: International Workshop on Computational Nanotechnology (IWCN), Daejeon, Korea (Virtual); 2021-05-24 - 2021-06-06; in "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2021), ISBN: 978-89-89453-30-7, 51 - 52. BibTeX
17. J. Ender, M. Mohamedou, S. Fiorentini, R. Orio, S. Selberherr, W. Goes, V. Sverdlov:
"Efficient Demagnetizing Field Calculation for Disconnected Complex Geometries in STT-MRAM Cells";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan - virtual; 2020-09-23 - 2020-10-06; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2020), 213 - 216 doi:10.23919/SISPAD49475.2020.9241662. BibTeX
16. S. Fiorentini, J. Ender, M. Mohamedou, R. Orio, S. Selberherr, W. Goes, V. Sverdlov:
"Computation of Torques in Magnetic Tunnel Junctions through Spin and Charge Transport Modeling";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan - virtual; 2020-09-23 - 2020-10-06; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2020), 209 - 212 doi:10.23919/SISPAD49475.2020.9241657. BibTeX
15. R. Orio, A. Makarov, W. Goes, J. Ender, S. Fiorentini, S. Selberherr, V. Sverdlov:
"Switching of a Perpendicularly Magnetized Free-Layer by Spin-Orbit-Torques with Reduced Currents";
Talk: World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI), Orlando, FL, USA - virtual; 2020-09-13 - 2020-09-16; in "Proceedings of the World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI)", (2020), ISBN: 978-1-950492-37-4, 58 - 61. BibTeX
14. R. Orio, J. Ender, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov:
"Reduced Current Spin-Orbit Torque Switching of a Perpendicularly Magnetized Free Layer";
Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France - virtual; 2020-09-01 in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2020), 123 - 124. BibTeX
13. S. Fiorentini, J. Ender, M. Mohamedou, V. Sverdlov, W. Goes, R. Orio, S. Selberherr:
"Comprehensive Modeling of Coupled Spin-Charge Transport and Magnetization Dynamics in STT-MRAM Cells";
Talk: SPIE Spintronics, San Diego, CA, USA - virtual; (invited) 2020-08-24 - 2020-08-28; in "Proceedings of SPIE Spintronics", (2020), 11470-44. BibTeX
12. S. Fiorentini, R. Orio, S. Selberherr, J. Ender, W. Goes, V. Sverdlov:
"Influence of Current Redistribution in Switching Models for Perpendicular STT-MRAM";
Talk: Meeting of the Electrochemical Society (ECS), Montreal, Canada - virtual; 2020-05-10 - 2020-05-14; in "Abstracts of the Meeting of the Electrochemical Society (ECS)", (2020), MA2020-01/1389, doi:10.1149/MA2020-01241389mtgabs. BibTeX
11. S. Fiorentini, J. Ender, S. Selberherr, R. Orio, W. Goes, V. Sverdlov:
"Comprehensive Modeling of Coupled Spin and Charge Transport through Magnetic Tunnel Junctions";
Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France - virtual; 2020-03-31 - 2020-04-02; in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2020), 112 - 113. BibTeX
10. S. Fiorentini, R. Orio, S. Selberherr, J. Ender, W. Goes, V. Sverdlov:
"Perpendicular STT-MRAM Switching at Fixed Voltage and at Fixed Current";
Talk: IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Penang, Malaysia - virtual; 2020-03-16 - 2020-03-18; in "Proceedings of the IEEE Electron Devices Technology and Manufacturing Conference (EDTM)", (2020), ISBN: 978-1-7281-2539-8, 341 - 344 doi:10.1109/EDTM47692.2020.9117985. BibTeX
9. V. Sverdlov, S. Fiorentini, J. Ender, W. Goes, R. Orio, S. Selberherr:
"Emerging CMOS Compatible Magnetic Memories and Logic";
Talk: IEEE Latin America Electron Devices Conference (LAEDC), San Jose, Costa Rica; (invited) 2020-02-25 - 2020-02-28; in "Proceedings of the IEEE Latin America Electron Devices Conference (LAEDC)", (2020), ISBN: 978-1-7281-1044-8, doi:10.1109/LAEDC49063.2020.9073332. BibTeX
8. R. Orio, A. Makarov, J. Ender, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov:
"A Dynamical Approach to Fast and Reliable External Field Free Perpendicular Magnetization Reversal by Spin-Orbit Torques";
Poster: IEEE International Electron Devices Meeting (IEDM), San Francisco, USA; 2019-12-07 - 2019-12-11; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM) Special Poster Session Dedicated to MRAM", (2019), 1 page(s) . BibTeX
7. S. Fiorentini, R. Orio, S. Selberherr, J. Ender, W. Goes, V. Sverdlov:
"Comprehensive Modeling of Switching in Perpendicular STT-MRAM";
Poster: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA; 2019-12-01 - 2019-12-06; in "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2019), ISBN: 978-0-578-61722-0, 107 - 108. BibTeX
6. R. Orio, S. Selberherr, J. Ender, S. Fiorentini, W. Goes, V. Sverdlov:
"Robustness of the Two-Pulse Switching Scheme for SOT-MRAM";
Talk: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA; 2019-12-01 - 2019-12-06; in "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2019), ISBN: 978-0-578-61722-0, 54 - 55. BibTeX
5. R. Orio, A. Makarov, S. Selberherr, W. Goes, J. Ender, S. Fiorentini, V. Sverdlov:
"Switching Speedup of the Magnetic Free Layer of Advanced SOT-MRAM";
Talk: European Solid-State Device Research Conference (ESSDERC), Krakow, Poland; 2019-09-23 - 2019-09-26; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2019), ISSN: 2378-6558, 146 - 149 doi:10.1109/ESSDERC.2019.8901780. BibTeX
4. S. Fiorentini, R. Orio, W. Goes, J. Ender, V. Sverdlov:
"Comprehensive Comparison of Switching Models for Perpendicular Spin-Transfer Torque MRAM Cells";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy; 2019-09-04 - 2019-09-06; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2019), ISBN: 978-1-7281-0938-1, 57 - 60 doi:10.1109/SISPAD.2019.8870359. BibTeX
3. R. Orio, A. Makarov, S. Selberherr, W. Gös, J. Ender, S. Fiorentini, V. Sverdlov:
"Robust Magnetic Field Free Switching Scheme for Perpendicular Free Layer in Advanced Spin Orbit Torque Magnetoresistive Random Access Memory";
Talk: International Workshop on Computational Nanotechnology (IWCN), Chicago, IL, USA; 2019-05-20 - 2019-05-24; in "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2019), ISBN: 978-3-9504738-0-3, 69 - 71. BibTeX
2. R. Orio, A. Makarov, W. Goes, J. Ender, S. Fiorentini, V. Sverdlov:
"Two-Pulse Magnetic Field Free Switching Scheme for Advanced Perpendicular SOT-MRAM";
Talk: International Symposium on Hysteresis Modeling and Micromagnetics (HMM), Heraklion, Greece; 2019-05-19 - 2019-05-22; in "Book of Abstracts of the International Symposium on Hysteresis Modeling and Micromagnetics (HMM)", (2019), 34. BibTeX
1. R. Orio, A. Makarov, S. Selberherr, W. Goes, J. Ender, S. Fiorentini, V. Sverdlov:
"Efficient Magnetic Field Free Switching of Symmetric Perpendicular Magnetic Free Layer for Advanced SOT-MRAM";
Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Grenoble, France; 2019-04-01 - 2019-04-03; in "Proceedings of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2019), 152 - 153. BibTeX

Talks and Poster Presentations (without Proceedings-Entry)

2. J. Ender, R. Orio, S. Fiorentini, W. Goes, V. Sverdlov:
"Large-Scale Finite Element Micromagnetics Simulations using Open Source Software";
Poster: European Materials Research Society (EMRS), Warsaw, Poland; 2019-09-16 - 2019-09-19; . BibTeX
1. S. Fiorentini, R. Orio, W. Goes, J. Ender, V. Sverdlov:
"Comprehensive Comparison of Switching Models for Perpendicular Spin Transfer Torque MRAM Cells";
Poster: European Materials Research Society (EMRS), Warsaw, Poland; 2019-09-16 - 2019-09-19; . BibTeX
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