Publications Simone Fiorentini
68 records
17. | M. Bendra, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov: "Interface Effects in Ultra-Scaled MRAM Cells"; Solid-State Electronics, 194, (2022), 108373-1 - 108373-4 doi:10.1016/j.sse.2022.108373. BibTeX |
16. | J. Ender, S. Fiorentini, R. Orio, T. Hadámek, M. Bendra, W. Goes, S. Selberherr, V. Sverdlov: "Advances in Modeling Emerging Magnetoresistive Random Access Memories: From Finite Element Methods to Machine Learning Approaches"; Proceedings of SPIE, 12157, (invited) (2022), 1215708-1 - 1215708-14 doi:10.1117/12.2624595. BibTeX |
15. | J. Ender, R. Lacerda de Orio, S. Fiorentini, S. Selberherr, W. Goes, V. Sverdlov: "Reinforcement learning to reduce failures in SOT-MRAM switching"; Microelectronics Reliability, 135, (invited) (2022), 1 - 5 doi:10.1016/j.microrel.2022.114570. BibTeX |
14. | T. Hadámek, S. Fiorentini, M. Bendra, J. Ender, R. Orio, W. Goes, S. Selberherr, V. Sverdlov: "Temperature Increase in STT-MRAM at Writing: A Fully Three-Dimensional Finite Element Approach"; Solid-State Electronics, 193, (invited) (2022), 108269-1 - 108269-7 doi:10.1016/j.sse.2022.108269. BibTeX |
13. | N. Jorstad, S. Fiorentini, W.J. Loch, W. Goes, S. Selberherr, V. Sverdlov: "Finite Element Modeling of Spin-Orbit Torques"; Solid-State Electronics, 194, (2022), 108323-1 - 108323-4 doi:10.1016/j.sse.2022.108323. BibTeX |
12. | W.J. Loch, S. Fiorentini, N. Jorstad, W. Goes, S. Selberherr, V. Sverdlov: "Double Reference Layer STT-MRAM Structures with Improved Performance"; Solid-State Electronics, 194, (2022), 108335-1 - 108335-4 doi:10.1016/j.sse.2022.108335. BibTeX |
11. | J. Ender, S. Fiorentini, R. Orio, W. Goes, V. Sverdlov, S. Selberherr: "Emerging CMOS Compatible Magnetic Memories and Logic"; IEEE Journal of the Electron Devices Society, 9, (invited) (2021), 456 - 463 doi:10.1109/JEDS.2021.3066679. BibTeX |
10. | J. Ender, R. Orio, S. Fiorentini, S. Selberherr, W. Goes, V. Sverdlov: "Improving Failure Rates in Pulsed SOT-MRAM Switching by Reinforcement Learning"; Microelectronics Reliability, 126, (2021), 114231-1 - 114231-5 doi:10.1016/j.microrel.2021.114231. BibTeX |
9. | J. Ender, R. Orio, S. Fiorentini, S. Selberherr, W. Goes, V. Sverdlov: "Reinforcement Learning Approach for Deterministic SOT-MRAM Switching"; Proceedings of SPIE, 11805, (invited) (2021), 1180519-1 - 1180519-8 doi:10.1117/12.2593937. BibTeX |
8. | S. Fiorentini, J. Ender, S. Selberherr, R. Orio, W. Goes, V. Sverdlov: "Coupled Spin and Charge Drift-Diffusion Approach Applied to Magnetic Tunnel Junctions"; Solid-State Electronics, 186, (invited) (2021), 108103 doi:10.1016/j.sse.2021.108103. BibTeX |
7. | R. Orio, J. Ender, S. Fiorentini, W. Gös, S. Selberherr, V. Sverdlov: "Numerical Analysis of Deterministic Switching of a Perpendicularly Magnetized Spin-Orbit Torque Memory Cell"; IEEE Journal of the Electron Devices Society, 9, (2021), 61 - 67 doi:10.1109/JEDS.2020.3039544. BibTeX |
6. | R. Orio, J. Ender, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov: "Optimization of a Spin-Orbit Torque Switching Scheme Based on Micromagnetic Simulations and Reinforcement Learning"; Micromachines, 12, (2021), 443 doi:10.3390/mi12040443. BibTeX |
5. | R. Orio, J. Ender, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov: "Two-Pulse Switching Scheme and Reinforcement Learning for Energy Efficient SOT-MRAM Simulations"; Solid-State Electronics, 185, (invited) (2021), 108075 doi:10.1016/j.sse.2021.108075. BibTeX |
4. | S. Fiorentini, J. Ender, M. Mohamedou, S. Selberherr, R. Orio, W. Goes, V. Sverdlov: "Comprehensive Modeling of Coupled Spin-Charge Transport and Magnetization Dynamics in STT-MRAM Cells"; Proceedings of SPIE, 11470, (invited) (2020), 50 - 56 doi:10.1117/12.2567480. BibTeX |
3. | S. Fiorentini, R. Orio, S. Selberherr, J. Ender, W. Goes, V. Sverdlov: "Analysis of Switching Under Fixed Voltage and Fixed Current in Perpendicular STT-MRAM"; IEEE Journal of the Electron Devices Society, 8, (invited) (2020), 1249 - 1256 doi:10.1109/JEDS.2020.3023577. BibTeX |
2. | R. Orio, A. Makarov, W. Goes, J. Ender, S. Fiorentini, V. Sverdlov: "Two-Pulse Magnetic Field-Free Switching Scheme for Perpendicular SOT-MRAM with a Symmetric Square Free Layer"; Physica B: Condensed Matter, 578, (2020), 411743 doi:10.1016/j.physb.2019.411743. BibTeX |
1. | R. Orio, A. Makarov, S. Selberherr, W. Goes, J. Ender, S. Fiorentini, V. Sverdlov: "Robust Magnetic Field-Free Switching of a Perpendicularly Magnetized Free Layer for SOT-MRAM"; Solid-State Electronics, 168, (2020), 107730-1 - 107730-7 doi:10.1016/j.sse.2019.107730. BibTeX |
5. | T. Hadámek, M. Bendra, S. Fiorentini, J. Ender, R. Orio, W. Goes, S. Selberherr, V. Sverdlov: "Temperature Increase in MRAM at Writing: A Finite Element Approach"; in "Proceedings of the 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", B. Cretu (ed); IEEE, 2021, ISBN: 978-1-6654-3746-2, 1 - 4 doi:10.1109/EuroSOI-ULIS53016.2021.9560669. BibTeX |
4. | S. Fiorentini, J. Ender, S. Selberherr, R. Orio, W. Goes, V. Sverdlov: "Comprehensive Modeling of Coupled Spin and Charge Transport through Magnetic Tunnel Junctions"; in "Proceedings of the 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", B. Cretu (ed); IEEE, 2020, ISBN: 978-1-7281-8765-5, 1 - 4 doi:10.1109/EUROSOI-ULIS49407.2020.9365497. BibTeX |
3. | S. Fiorentini, R. Orio, S. Selberherr, J. Ender, W. Gös, V. Sverdlov: "Influence of Current Redistribution in Switching Models for Perpendicular STT-MRAM"; in "Advanced CMOS-Compatible Semiconductor Devices 19, Vol. 97, No. 5", issued by The Electrochemical Society; J. A. Martino, B.-Y. Nguyen, F. Gamiz, H. Ishii, J.-P. Raskin, S. Selberherr, E. Simoen (ed); ECS Transactions, 2020, ISBN: 978-1-62332-604-3, 159 - 164 doi:10.1149/09705.0159ecst. BibTeX |
2. | R. Orio, J. Ender, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov: "Reduced Current Spin-Orbit Torque Switching of a Perpendicularly Magnetized Free Layer"; in "Proceedings of the 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", B. Cretu (ed); IEEE, 2020, ISBN: 978-1-7281-8765-5, 1 - 4 doi:10.1109/EUROSOI-ULIS49407.2020.9365283. BibTeX |
1. | R. Orio, A. Makarov, S. Selberherr, W. Goes, J. Ender, S. Fiorentini, V. Sverdlov: "Efficient Magnetic Field-Free Switching of a Symmetric Perpendicular Magnetic Free Layer for Advanced SOT-MRAM"; in "Proceedings of the 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", J. Lacord, M. Bawedin (ed); IEEE, 2019, ISBN: 978-1-7281-1658-7, 1 - 4 doi:10.1109/EUROSOI-ULIS45800.2019.9041920. BibTeX |
44. | S. Fiorentini, W.J. Loch, M. Bendra, N. Jørstad, J. Ender, R. Orio, T. Hadámek, W. Goes, V. Sverdlov, S. Selberherr: "Design Analysis of Ultra-Scaled MRAM Cells"; Talk: 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, Nanjing, China; (invited) 2022-10-25 - 2022-10-28; in "Proceedings of 2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)", (2022), ISBN: 978-1-6654-6905-0, . BibTeX |
43. | V. Sverdlov, M. Bendra, S. Fiorentini, J. Ender, R. Orio, T. Hadámek, W.J. Loch, N. Jørstad, W. Goes, S. Selberherr: "Modeling Advanced Spintronic Based Magnetoresistive Memory"; Talk: International Conference on Microwave & THz Technologies, Wireless Communications and OptoElectronics (IRPhE 2022), Yerevan, Armenia; (invited) 2022-09-27 - 2022-09-29; in "Book of Abstracts of the International Conference on Microwave & THz Technologies and Optoelectronics (IRPhE)", (2022), . BibTeX |
42. | S. Fiorentini, M. Bendra, J. Ender, R. Orio, W. Goes, S. Selberherr, V. Sverdlov: "Spin Torques in ULTRA-Scaled MRAM Devices"; Talk: IEEE European Solid-State Device Research Conference (ESSDERC), Mailand; 2022-09-20 - 2022-09-22; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2022), ISBN: 978-1-6654-8496-1, 348 - 351. BibTeX |
41. | S. Fiorentini, J. Ender, R. Orio, S. Selberherr, W. Goes, V. Sverdlov: "Comprehensive Evaluation of Torques in Ultra Scaled MRAM Devices"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022), Granada, Spain; 2022-09-06 - 2022-09-08; in "SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet", (2022), 11 - 12. BibTeX |
40. | S. Fiorentini, J. Ender, S. Selberherr, W. Goes, V. Sverdlov: "Spin Transfer Torque Evaluation Based on Coupled Spin and Charge Transport: A Finite Element Method Approach"; Talk: 26th World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI 2022), online; 2022-07-12 - 2022-07-15; in "The 26th World Multi-Conference on Systemics, Cybernetics and Informatics: WMSCI 2022. Proceedings Volume II", (2022), 20, 4, 40 - 44. BibTeX |
39. | V. Sverdlov, W. Loch, M. Bendra, S. Fiorentini, J. Ender, R. Orio, T. Hadámek, N. Jorstad, W. Goes, S. Selberherr: "Modeling Approach to Ultra-Scaled MRAM Cells"; Talk: ASETMEET2022 International Meet On Applied Science, Engineering and Technology, Taastrup, Copenhagen; (invited) 2022-06-23 - 2022-06-25; in "Book of Abstracts of the International Meet On Applied Science, Engineering and Technology (ASETMEET)", (2022), 7 - 8. BibTeX |
38. | T. Hadámek, S. Fiorentini, M. Bendra, R. Orio, W.J. Loch, N. Jorstad, S. Selberherr, W. Goes, V. Sverdlov: "Temperature Modeling in STT-MRAM:A Fully Three-Dimensional Finite Element Approach"; Talk: 16th International Conference on Nanostructured Materials, Sevilla, Spain; 2022-06-06 - 2022-06-10; in "Book of Abstracts of the International Conference on Nanostructured Materials (NANO)", (2022), . BibTeX |
37. | N. Jørstad, S. Fiorentini, S. Selberherr, W. Goes, V. Sverdlov: "Modeling Interfacial and Bulk Spin-Orbit torques"; Talk: 16th International Conference on Nanostructured Materials, Sevilla, Spain; 2022-06-06 - 2022-06-10; in "Book of Abstracts of the International Conference on Nanostructured Materials (NANO)", (2022), . BibTeX |
36. | R. Orio, J. Ender, W. Goes, S. Fiorentini, S. Selberherr, V. Sverdlov: "About the Switching Energy of a Magnetic Tunnel Junction determined by Spin-Orbit Torque and Voltage-Controlled Magnetic Anisotropy"; Talk: 2022 IEEE Latin American Electron Devices Conference (LAEDC), Puebla, Mexico; 2022-06-04 - 2022-06-06; in "2022 IEEE Latin American Electron Devices Conference (LAEDC)", (2022), ISBN: 978-1-6654-9768-8, 1 - 4 doi:10.1109/LAEDC54796.2022.9908222. BibTeX |
35. | V. Sverdlov, M. Bendra, S. Fiorentini, J. Ender, R. Orio, T. Hadámek, W.J. Loch, N. Jørstad, W. Goes, S. Selberherr: "Emerging Devices for Digital Spintronics"; 2nd Global Conference & Expo on Nanotechnology & Nanoscience, online; (invited) 2022-05-25 - 2022-05-26; in "2nd Global Conference & Expo on Nanotechnology & Nanoscience", (2022), 32 - 33. BibTeX |
34. | M. Bendra, S. Fiorentini, J. Ender, R. Orio, T. Hadámek, W.J. Loch, N. Jørstad, S. Selberherr, W. Goes, V. Sverdlov: "Spin Transfer Torques in Ultra-Scaled MRAM Cells"; Talk: MIPRO 2022, Opatija, Croatia; 2022-05-23 - 2022-05-27; in "2022 45th Jubilee International Convention on Information, Communication and Electronic Technology (MIPRO)", (2022), ISBN: 978-953-233-103-5, 129 - 132. BibTeX |
33. | M. Bendra, S. Fiorentini, J. Ender, R. Orio, T. Hadámek, W.J. Loch, N. Jørstad, W. Goes, S. Selberherr: "Interface Effects in Ultra-Scaled MRAM Cells"; Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Udine, Italy; 2022-05-18 - 2022-05-20; in "Proceedings of the Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS)", (2022), . BibTeX |
32. | V. Sverdlov, M. Bendra, S. Fiorentini, J. Ender, R. Orio, T. Hadámek, W.J. Loch, N. Jørstad, S. Selberherr: "Modeling Advanced Magnetoresistive Memory: A Journey from Finite Element Methods to Machine Learning Approaches"; 2 nd Global Webinar on Nanoscience & Nanotechnology, online; (invited) 2022-03-14 - 2022-03-15; in "2nd Global Webinar on Nanoscience & Nanotechnology", (2022), . BibTeX |
31. | N. Jørstad, S. Fiorentini, W. Goes, V. Sverdlov: "Efficient Finite Element Method Approach to Model Spin Orbit Torque MRAM"; Talk: International MOS-AK Workshop, Silicon Valley, USA; 2021-12-17 in "Proceedings of the 14th International MOS-AK Workshop", (2021), 1. BibTeX |
30. | S. Fiorentini, M. Bendra, J. Ender, R. Orio, S. Selberherr, W. Goes, V. Sverdlov: "Design Support for Ultra-Scaled MRAM Cells"; Poster: IEEE International Electron Devices Meeting (IEDM), San Francisco, USA; 2021-12-13 - 2021-12-15; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM) Special Poster Session Dedicated to MRAM", (2021), 1 page(s) . BibTeX |
29. | S. Fiorentini, R. Orio, S. Selberherr, J. Ender, W. Goes, V. Sverdlov: "Spin and Charge Drift-Diffusion Approach to Torque Computation in Spintronic Devices"; Talk: 2021 Workshop on Innovative Nanoscale Devices and Systems (WINDS2021), Kona; 2021-11-28 - 2021-12-03; in "WINDS Book of Abstracts", (2021), ISBN: 978-3-9504738-3-4, 12 - 13. BibTeX |
28. | J. Ender, S. Fiorentini, R. Orio, T. Hadámek, M. Bendra, W. Goes, S. Selberherr, V. Sverdlov: "Advanced Modeling of Emerging MRAM: From Finite Element Methods to Machine Learning Approaches"; Talk: International Conference Micro- and Nanoelectronics (ICMNE), Moscow-Zvenigorod, Russia; (invited) 2021-10-04 - 2021-10-08; in "Proceedings of the International Conference Micro- and Nanoelectronics (ICMNE)", (2021), ISBN: 978-5-317-06675-8, . BibTeX |
27. | J. Ender, R. Orio, S. Fiorentini, S. Selberherr, W. Gös, V. Sverdlov: "Improving Failure Rates in Pulsed SOT-MRAM Switching by Reinforcement Learning"; Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Bordeaux, France; 2021-10-04 - 2021-10-07; in "Proceedings of the 32nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2021), ISSN: 0026-2714, 1 - 4 doi:10.1016/j.microrel.2021.114231. BibTeX |
26. | M. Bendra, J. Ender, S. Fiorentini, T. Hadámek, R. Orio, W. Goes, S. Selberherr, V. Sverdlov: "Finite Element Method Approach to MRAM Modeling"; Talk: International Convention on Information, Communication and Electronic Technology (MIPRO), Opatija, Croatia; 2021-09-27 - 2021-10-01; in "Proceedings of the International Convention on Information, Communication and Electronic Technology (MIPRO)", (2021), ISBN: 978-953-233-101-1, 70 - 73 doi:10.23919/MIPRO52101.2021.9597194. BibTeX |
25. | J. Ender, R. Orio, S. Fiorentini, S. Selberherr, W. Goes, V. Sverdlov: "Reinforcement Learning Approach for Sub-Critical Current SOT-MRAM Switching Materials"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Dallas, Texas (USA); 2021-09-27 - 2021-09-29; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2021), 150 - 154 doi:10.1109/SISPAD54002.2021.9592561. BibTeX |
24. | S. Fiorentini, J. Ender, R. Orio, S. Selberherr, W. Goes, V. Sverdlov: "Spin and Charge Drift-Diffusion Approach to Torque Computation in Magnetic Tunnel Junctions"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Dallas, Texas (USA); 2021-09-27 - 2021-09-29; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2021), 155 - 158 doi:10.1109/SISPAD54002.2021.9592559. BibTeX |
23. | J. Ender, R. Orio, S. Fiorentini, S. Selberherr, W. Goes, V. Sverdlov: "Reinforcement Learning to Reduce Failures in SOT-MRAM Switching"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2021-09-15 - 2021-10-15; in "Proceedings of the IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2021), ISBN: 978-1-6654-3988-6, doi:10.1109/IPFA53173.2021.9617362. BibTeX |
22. | R. Orio, J. Ender, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov: "Deterministic Spin-Orbit Switching Scheme for an Array of Perpendicular MRAM Cells Suitable for Large Scale Integration"; Talk: Trends in Magnetism (TMAG), Cefalù, Italy; 2021-09-06 - 2021-09-10; in "Proceedings of the Trends in Magnetism Conference (TMAG)", (2021), . BibTeX |
21. | T. Hadámek, M. Bendra, S. Fiorentini, J. Ender, R. Orio, W. Goes, S. Selberherr, V. Sverdlov: "Temperature Increase in MRAM at Writing: A Finite Element Approach"; Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France; 2021-09-01 - 2021-09-03; in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2021), 133 - 134. BibTeX |
20. | J. Ender, S. Fiorentini, V. Sverdlov, W. Goes, R. Orio, S. Selberherr: "Reinforcement Learning Approach for Deterministic SOT-MRAM Switching"; Talk: SPIE Spintronics, San Diego, CA, USA - virtual; (invited) 2021-08-01 - 2021-08-05; in "Proceedings of SPIE Spintronics", (2021), 11805-53. BibTeX |
19. | J. Ender, S. Fiorentini, S. Selberherr, W. Goes, V. Sverdlov: "Advanced Modeling of Emerging Nonvolatile Magnetoresistive Devices"; Talk: International Workshop on Computational Nanotechnology (IWCN), Daejeon, Korea (Virtual); (invited) 2021-05-24 - 2021-06-06; in "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2021), ISBN: 978-89-89453-30-7, 45 - 46. BibTeX |
18. | S. Fiorentini, J. Ender, R. Orio, S. Selberherr, W. Goes, V. Sverdlov: "Spin Drift-Diffusion Approach for the Computation of Torques in Multi-Layered Structures"; Talk: International Workshop on Computational Nanotechnology (IWCN), Daejeon, Korea (Virtual); 2021-05-24 - 2021-06-06; in "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2021), ISBN: 978-89-89453-30-7, 51 - 52. BibTeX |
17. | J. Ender, M. Mohamedou, S. Fiorentini, R. Orio, S. Selberherr, W. Goes, V. Sverdlov: "Efficient Demagnetizing Field Calculation for Disconnected Complex Geometries in STT-MRAM Cells"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan - virtual; 2020-09-23 - 2020-10-06; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2020), 213 - 216 doi:10.23919/SISPAD49475.2020.9241662. BibTeX |
16. | S. Fiorentini, J. Ender, M. Mohamedou, R. Orio, S. Selberherr, W. Goes, V. Sverdlov: "Computation of Torques in Magnetic Tunnel Junctions through Spin and Charge Transport Modeling"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan - virtual; 2020-09-23 - 2020-10-06; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2020), 209 - 212 doi:10.23919/SISPAD49475.2020.9241657. BibTeX |
15. | R. Orio, A. Makarov, W. Goes, J. Ender, S. Fiorentini, S. Selberherr, V. Sverdlov: "Switching of a Perpendicularly Magnetized Free-Layer by Spin-Orbit-Torques with Reduced Currents"; Talk: World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI), Orlando, FL, USA - virtual; 2020-09-13 - 2020-09-16; in "Proceedings of the World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI)", (2020), ISBN: 978-1-950492-37-4, 58 - 61. BibTeX |
14. | R. Orio, J. Ender, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov: "Reduced Current Spin-Orbit Torque Switching of a Perpendicularly Magnetized Free Layer"; Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France - virtual; 2020-09-01 in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2020), 123 - 124. BibTeX |
13. | S. Fiorentini, J. Ender, M. Mohamedou, V. Sverdlov, W. Goes, R. Orio, S. Selberherr: "Comprehensive Modeling of Coupled Spin-Charge Transport and Magnetization Dynamics in STT-MRAM Cells"; Talk: SPIE Spintronics, San Diego, CA, USA - virtual; (invited) 2020-08-24 - 2020-08-28; in "Proceedings of SPIE Spintronics", (2020), 11470-44. BibTeX |
12. | S. Fiorentini, R. Orio, S. Selberherr, J. Ender, W. Goes, V. Sverdlov: "Influence of Current Redistribution in Switching Models for Perpendicular STT-MRAM"; Talk: Meeting of the Electrochemical Society (ECS), Montreal, Canada - virtual; 2020-05-10 - 2020-05-14; in "Abstracts of the Meeting of the Electrochemical Society (ECS)", (2020), MA2020-01/1389, doi:10.1149/MA2020-01241389mtgabs. BibTeX |
11. | S. Fiorentini, J. Ender, S. Selberherr, R. Orio, W. Goes, V. Sverdlov: "Comprehensive Modeling of Coupled Spin and Charge Transport through Magnetic Tunnel Junctions"; Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France - virtual; 2020-03-31 - 2020-04-02; in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2020), 112 - 113. BibTeX |
10. | S. Fiorentini, R. Orio, S. Selberherr, J. Ender, W. Goes, V. Sverdlov: "Perpendicular STT-MRAM Switching at Fixed Voltage and at Fixed Current"; Talk: IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Penang, Malaysia - virtual; 2020-03-16 - 2020-03-18; in "Proceedings of the IEEE Electron Devices Technology and Manufacturing Conference (EDTM)", (2020), ISBN: 978-1-7281-2539-8, 341 - 344 doi:10.1109/EDTM47692.2020.9117985. BibTeX |
9. | V. Sverdlov, S. Fiorentini, J. Ender, W. Goes, R. Orio, S. Selberherr: "Emerging CMOS Compatible Magnetic Memories and Logic"; Talk: IEEE Latin America Electron Devices Conference (LAEDC), San Jose, Costa Rica; (invited) 2020-02-25 - 2020-02-28; in "Proceedings of the IEEE Latin America Electron Devices Conference (LAEDC)", (2020), ISBN: 978-1-7281-1044-8, doi:10.1109/LAEDC49063.2020.9073332. BibTeX |
8. | R. Orio, A. Makarov, J. Ender, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov: "A Dynamical Approach to Fast and Reliable External Field Free Perpendicular Magnetization Reversal by Spin-Orbit Torques"; Poster: IEEE International Electron Devices Meeting (IEDM), San Francisco, USA; 2019-12-07 - 2019-12-11; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM) Special Poster Session Dedicated to MRAM", (2019), 1 page(s) . BibTeX |
7. | S. Fiorentini, R. Orio, S. Selberherr, J. Ender, W. Goes, V. Sverdlov: "Comprehensive Modeling of Switching in Perpendicular STT-MRAM"; Poster: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA; 2019-12-01 - 2019-12-06; in "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2019), ISBN: 978-0-578-61722-0, 107 - 108. BibTeX |
6. | R. Orio, S. Selberherr, J. Ender, S. Fiorentini, W. Goes, V. Sverdlov: "Robustness of the Two-Pulse Switching Scheme for SOT-MRAM"; Talk: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA; 2019-12-01 - 2019-12-06; in "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2019), ISBN: 978-0-578-61722-0, 54 - 55. BibTeX |
5. | R. Orio, A. Makarov, S. Selberherr, W. Goes, J. Ender, S. Fiorentini, V. Sverdlov: "Switching Speedup of the Magnetic Free Layer of Advanced SOT-MRAM"; Talk: European Solid-State Device Research Conference (ESSDERC), Krakow, Poland; 2019-09-23 - 2019-09-26; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2019), ISSN: 2378-6558, 146 - 149 doi:10.1109/ESSDERC.2019.8901780. BibTeX |
4. | S. Fiorentini, R. Orio, W. Goes, J. Ender, V. Sverdlov: "Comprehensive Comparison of Switching Models for Perpendicular Spin-Transfer Torque MRAM Cells"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy; 2019-09-04 - 2019-09-06; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2019), ISBN: 978-1-7281-0938-1, 57 - 60 doi:10.1109/SISPAD.2019.8870359. BibTeX |
3. | R. Orio, A. Makarov, S. Selberherr, W. Gös, J. Ender, S. Fiorentini, V. Sverdlov: "Robust Magnetic Field Free Switching Scheme for Perpendicular Free Layer in Advanced Spin Orbit Torque Magnetoresistive Random Access Memory"; Talk: International Workshop on Computational Nanotechnology (IWCN), Chicago, IL, USA; 2019-05-20 - 2019-05-24; in "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2019), ISBN: 978-3-9504738-0-3, 69 - 71. BibTeX |
2. | R. Orio, A. Makarov, W. Goes, J. Ender, S. Fiorentini, V. Sverdlov: "Two-Pulse Magnetic Field Free Switching Scheme for Advanced Perpendicular SOT-MRAM"; Talk: International Symposium on Hysteresis Modeling and Micromagnetics (HMM), Heraklion, Greece; 2019-05-19 - 2019-05-22; in "Book of Abstracts of the International Symposium on Hysteresis Modeling and Micromagnetics (HMM)", (2019), 34. BibTeX |
1. | R. Orio, A. Makarov, S. Selberherr, W. Goes, J. Ender, S. Fiorentini, V. Sverdlov: "Efficient Magnetic Field Free Switching of Symmetric Perpendicular Magnetic Free Layer for Advanced SOT-MRAM"; Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Grenoble, France; 2019-04-01 - 2019-04-03; in "Proceedings of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2019), 152 - 153. BibTeX |
2. | J. Ender, R. Orio, S. Fiorentini, W. Goes, V. Sverdlov: "Large-Scale Finite Element Micromagnetics Simulations using Open Source Software"; Poster: European Materials Research Society (EMRS), Warsaw, Poland; 2019-09-16 - 2019-09-19; . BibTeX |
1. | S. Fiorentini, R. Orio, W. Goes, J. Ender, V. Sverdlov: "Comprehensive Comparison of Switching Models for Perpendicular Spin Transfer Torque MRAM Cells"; Poster: European Materials Research Society (EMRS), Warsaw, Poland; 2019-09-16 - 2019-09-19; . BibTeX |