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Publications Tibor Grasser

769 records


Books and Editorships


10. T. Grasser:
"Noise in Nanoscale Semiconductor Devices";
Springer Science+Business Media New York, (2020), ISBN: 978-3-030-37499-0, 729 page(s) doi:10.1007/978-3-030-37500-3. BibTeX

9. L. Filipovic, T. Grasser:
"Miniaturized Transistors";
MDPI, (2019), ISBN: 978-3-03921-010-7, 202 page(s) doi:10.3390/books978-3-03921-011-4. BibTeX

8. L. Filipovic, T. Grasser:
"Editorial for the Special Issue on Miniaturized Transistors";
Micromachines, 10, (2019), 1 - 3 doi:10.3390/mi10050300. BibTeX

7. T. Grasser, J. Stathis:
"Bias Temperature Instability (BTI) in MOS Devices";
Microelectronics Reliability, 80, (2018), . BibTeX

6. T. Grasser:
"Hot Carrier Degradation in Semiconductor Devices";
Springer International Publishing, (2014), ISBN: 978-3-319-08993-5, 517 page(s) doi:10.1007/978-3-319-08994-2. BibTeX

5. T. Grasser:
"Bias Temperature Instability for Devices and Circuits";
Springer Science+Business Media New York, (2013), ISBN: 978-1-4614-7908-6, 810 page(s) doi:10.1007/978-1-4614-7909-3. BibTeX

4. G. Meller, T. Grasser:
"Organic Electronics";
Springer-Verlag, Berlin-Heidelberg, (2009), ISBN: 978-3-642-04537-0, 328 page(s) doi:10.1007/978-3-642-04538-7. BibTeX

3. T. Grasser, S. Selberherr:
"Simulation of Semiconductor Processes and Devices 2007";
Springer-Verlag, Wien - New York, Wien, (2007), ISBN: 978-3-211-72860-4, 460 page(s) doi:10.1007/978-3-211-72861-1. BibTeX

2. T. Grasser, S. Selberherr:
"Modelling the Negative Bias Temperature Instability (Editorial)";
Microelectronics Reliability, 47, (2007), 839 - 840 doi:10.1016/j.microrel.2006.10.005. BibTeX

1. T. Grasser:
"Advanced Device Modeling and Simulation";
World Scientific Publishing Co., (2003), ISBN: 9-812-38607-6, 210 page(s) . BibTeX


Publications in Scientific Journals


203. M. Feil, K. Puschkarsky, W. Gustin, H. Reisinger, T. Grasser:
"On the Physical Meaning of Single-Value Activation Energies for BTI in Si and SiC MOSFET Devices";
IEEE Transactions on Electron Devices, 68, (2021), 236 - 243 doi:10.1109/TED.2020.3036321. BibTeX

202. T. Knobloch, Yu. Illarionov, F. Ducry, C. Schleich, S. Wachter, K. Watanabe, T. Taniguchi, T. Müller, M. Waltl, M. Lanza, M. I. Vexler, M. Luisier, T. Grasser:
"The Performance Limits of Hexagonal Boron Nitride as an Insulator for Scaled CMOS Devices Based on Two-Dimensional Materials";
Nature Electronics, 4, (2021), 98 - 108 doi:10.1038/s41928-020-00529-x. BibTeX

201. J. Berens, G. Pobegen, T. Grasser:
"Tunneling Effects in NH3 Annealed 4H-SiC Trench MOSFETs";
Materials Science Forum, 1004, (2020), 652 - 658 doi:10.4028/www.scientific.net/MSF.1004.652. BibTeX

200. M. Feil, A. Huerner, K. Puschkarsky, C. Schleich, T. Eichinger, W. Gustin, H. Reisinger, T. Grasser:
"The Impact of Interfacial Charge Trapping on the Reproducibility of Measurements of Silicon Carbide MOSFET Device Parameters";
Crystals, 10, (invited) (2020), 1143-1 - 1143-14 doi:10.3390/cryst10121143. BibTeX

199. Yu. Illarionov, T. Knobloch, T. Grasser:
"Native High-k Oxides for 2D Transistors";
Nature Electronics, 3, (2020), 442 - 443 doi:10.1038/s41928-020-0464-2. BibTeX

198. Yu. Illarionov, T. Knobloch, M. Jech, M. Lanza, D. Akinwande, M. I. Vexler, T. Müller, M. Lemme, G. Fiori, F. Schwierz, T. Grasser:
"Insulators for 2D Nanoelectronics: The Gap to Bridge";
Nature Communications, 11, (2020), 3385 doi:10.1038/s41467-020-16640-8. BibTeX

197. M. Jech, G.A. Rott, H. Reisinger, S. Tyaginov, G. Rzepa, A. Grill, D. Jabs, C. Jungemann, M. Waltl, T. Grasser:
"Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full {VG, VD} Bias Space: Implications and Peculiarities";
IEEE Transactions on Electron Devices, 67, (2020), 3315 - 3322 doi:10.1109/TED.2020.3000749. BibTeX

196. B. Ruch, G. Pobegen, T. Grasser:
"Investigation of the Temperature Dependence of Hot-Carrier Degradation in Si MOSFETs Using Spectroscopic Charge Pumping";
IEEE Transactions on Electron Devices, 67, (2020), 4092 - 4098 doi:10.1109/TED.2020.3018091. BibTeX

195. B. Stampfer, F. Schanovski, T. Grasser, M. Waltl:
"Semi-Automated Extraction of the Distribution of Single Defects for nMOS Transistors";
Micromachines, 11, (invited) (2020), 446-1 - 446-11 doi:10.3390/mi11040446. BibTeX

194. B. Stampfer, M. Simicic, P. Weckx, A. Abbasi, B. Kaczer, T. Grasser, M. Waltl:
"Extraction of Statistical Gate Oxide Parameters From Large MOSFET Arrays";
IEEE Transactions on Device and Materials Reliability, 20, (invited) (2020), 251 - 257 doi:10.1109/TDMR.2020.2985109. BibTeX

193. M. Waltl, B. Stampfer, G. Rzepa, B. Kaczer, T. Grasser:
"Separation of Electron and Hole Trapping Components of PBTI in SiON nMOS Transistors";
Microelectronics Reliability, 114, (2020), 113746-1 - 113746-5 doi:10.1016/j.microrel.2020.113746. BibTeX

192. C. Wen, A. Banshchikov, Yu. Illarionov, W. Frammelsberger, T. Knobloch, F. Hui, N. S. Sokolov, T. Grasser, M. Lanza:
"Dielectric Properties of Ultrathin CaF2 Ionic Crystals";
Advanced Materials, 32, (2020), 2002525-1 - 2002525-6 doi:10.1002/adma.202002525. BibTeX

191. J. Berens, G. Pobegen, T. Eichinger, G. Rescher, T. Grasser:
"Cryogenic Characterization of NH3 Post Oxidation Annealed 4H-SiC Trench MOSFETs";
Materials Science Forum, 963, (2019), 175 - 179 doi:10.4028/www.scientific.net/MSF.963.175. BibTeX

190. J. Berens, G. Pobegen, G. Rescher, T. Aichinger, T. Grasser:
"NH3 and NO + NH3 Annealing of 4H-SiC Trench MOSFETs: Device Performance and Reliability";
IEEE Transactions on Electron Devices, 66, (2019), 4692 - 4697 doi:10.1109/TED.2019.2941723. BibTeX

189. R. Bernhard, G. Pobegen, M. Rösch, R. Vytla, T. Grasser:
"Charge Pumping of Low-Voltage Silicon Trench Powers MOSFETs";
IEEE Transactions on Device and Materials Reliability, 19, (2019), 133 - 139 doi:10.1109/TDMR.2019.2891794. BibTeX

188. J. Franco, Z. Wu, G. Rzepa, L. Ragnarsson, H. Dekkers, A. Vandooren, G Groeseneken, N. Horiguchi, N. Collaert, D. Linten, T. Grasser, B. Kaczer:
"On the Impact of the Gate Work-Function Metal on the Charge Trapping Component of NBTI and PBTI";
IEEE Transactions on Device and Materials Reliability, 19, (2019), 268 - 274 doi:10.1109/TDMR.2019.2913258. BibTeX

187. K. Giering, K. Puschkarsky, H. Reisinger, G. Rzepa, G.A. Rott, R. Vollertsen, T. Grasser, R. Jancke:
"NBTI Degradation and Recovery in Analog Circuits: Accurate and Efficient Circuit-Level Modeling";
IEEE Transactions on Electron Devices, 66, (2019), 1662 - 1668 doi:10.1109/TED.2019.2901907. BibTeX

186. A. Grill, B. Stampfer, K.-S. Im, J. Lee, C. Ostermaier, H. Ceric, M. Waltl, T. Grasser:
"Electrostatic Coupling and Identification of Single-Defects in GaN/AlGaN Fin-MIS-HEMTs";
Solid-State Electronics, 19, (2019), 41 - 47 doi:10.1016/j.sse.2019.02.004. BibTeX

185. Yu. Illarionov, A. Banshchikov, D.K Polyushkin, S. Wachter, T. Knobloch, M. Thesberg, L. Mennel, M. Paur, M. Stöger-Pollach, A. Steiger-Thirsfeld, M. I. Vexler, M. Waltl, N. S. Sokolov, T. Müller, T. Grasser:
"Ultrathin Calcium Fluoride Insulators for Two-Dimensional Field-Effect Transistors";
Nature Electronics, 2, (2019), 230 - 235 doi:10.1038/s41928-019-0256-8. BibTeX

184. Yu. Illarionov, A. Banshchikov, D.K Polyushkin, S. Wachter, T. Knobloch, M. Thesberg, M. I. Vexler, M. Waltl, M. Lanza, N. S. Sokolov, A. Müller, T. Grasser:
"Reliability of Scalable MoS2 FETs With 2 nm Crystalline CaF2 Insulators";
2D Materials, 6, (2019), 045004 doi:10.1088/2053-1583/ab28f2. BibTeX

183. M. Jech, A.-M. El-Sayed, S. E. Tyaginov, A. Shluger, T. Grasser:
"Ab Initio Treatment of Silicon-Hydrogen Bond Rupture at Si/SiO2 Interfaces";
Physical Review B, 100, (2019), 195302 doi:10.1103/PhysRevB.100.195302. BibTeX

182. M. Jech, B. Ullmann, G. Rzepa, S. E. Tyaginov, A. Grill, M. Waltl, D. Jabs, C. Jungemann, T. Grasser:
"Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part II: Theory";
IEEE Transactions on Electron Devices, 66, (2019), 241 - 248 doi:10.1109/TED.2018.2873421. BibTeX

181. X. Jing, Yu. Illarionov, E. Yalon, P. Zhou, T. Grasser, Y. Shi, M. Lanza:
"Engineering Field Effect Transistors with 2D Semiconducting Channels: Status and Prospects";
Advanced Functional Materials, 30, (2019), 1901971 doi:10.1002/adfm.201901971. BibTeX

180. A. Makarov, B. Kaczer, A. Chasin, M. Vandemaele, E. Bury, M. Jech, A. Grill, G. Hellings, A.-M. El-Sayed, T. Grasser, D. Linten, S. E. Tyaginov:
"Bi-Modal Variability of nFinFET Characteristics During Hot-Carrier Stress: A Modeling Approach";
IEEE Electron Device Letters, 40, (2019), 1579 - 1582 doi:10.1109/LED.2019.2933729. BibTeX

179. A. Makarov, B. Kaczer, Ph. Roussel, A. Chasin, A. Grill, M. Vandemaele, G. Hellings, A.-M. El-Sayed, T. Grasser, D. Linten, S. E. Tyaginov:
"Stochastic Modeling of the Impact of Random Dopants on Hot-Carrier Degradation in n-FinFETs";
IEEE Electron Device Letters, 40, (2019), 870 - 873 doi:10.1109/LED.2019.2913625. BibTeX

178. N. Oliva, Yu. Illarionov, E. Casu, M. Cavalieri, T. Knobloch, T. Grasser, A. Ionescu:
"Hysteresis Dynamics in Double-Gated n-Type WSe2 FETs With High-k Top Gate Dielectric";
IEEE Journal of the Electron Devices Society, 7, (2019), 1163 - 1169 doi:10.1109/JEDS.2019.2933745. BibTeX

177. K. Puschkarsky, T. Grasser, T. Aichinger, W. Gustin, H. Reisinger:
"Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage Instability";
IEEE Transactions on Electron Devices, 66, (invited) (2019), 4604 - 4616 doi:10.1109/TED.2019.2938262. BibTeX

176. K. Puschkarsky, H. Reisinger, G.A. Rott, C. Schluender, W. Gustin, T. Grasser:
"An Efficient Analog Compact NBTI Model for Stress and Recovery Based on Activation Energy Maps";
IEEE Transactions on Electron Devices, 66, (2019), 4623 - 4630 doi:10.1109/TED.2019.2941889. BibTeX

175. A. Toifl, V. Simonka, A. Hössinger, S. Selberherr, T. Grasser, J. Weinbub:
"Simulation of the Effects of Postimplantation Annealing on Silicon Carbide DMOSFET Characteristics";
IEEE Transactions on Electron Devices, 66, (2019), 3060 - 3065 doi:10.1109/TED.2019.2916929. BibTeX

174. B. Ullmann, M. Jech, K. Puschkarsky, G.A. Rott, M. Waltl, Yu. Illarionov, H. Reisinger, T. Grasser:
"Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part I: Experimental";
IEEE Transactions on Electron Devices, 66, (2019), 232 - 240 doi:10.1109/TED.2018.2873419. BibTeX

173. B. Ullmann, K. Puschkarsky, M. Waltl, H. Reisinger, T. Grasser:
"Evaluation of Advanced MOSFET Threshold Voltage Drift Measurement Techniques";
IEEE Transactions on Device and Materials Reliability, 19, (2019), 358 - 362 doi:10.1109/TDMR.2019.2909993. BibTeX

172. Z. Wu, J. Franco, A. Vandooren, B. Kaczer, Ph. Roussel, G. Rzepa, T. Grasser:
"Improved PBTI Reliability in Junction-Less FET Fabricated at Low Thermal Budget for 3-D Sequential Integration";
IEEE Transactions on Device and Materials Reliability, 9, (2019), 262 - 267 doi:10.1109/TDMR.2019.2906843. BibTeX

171. A.-M. El-Sayed, M. Watkins, T. Grasser, A. Shluger:
"Effect of Electric Field on Migration of Defects in Oxides: Vacancies and Interstitials in Bulk MgO";
Physical Review B, 98, (2018), 064102 doi:10.1103/PhysRevB.98.064102. BibTeX

170. W. Gös, Y. Wimmer, A.-M. El-Sayed, G. Rzepa, M. Jech, A. Shluger, T. Grasser:
"Identification of Oxide Defects in Semiconductor Devices: A Systematic Approach Linking DFT to Rate Equations and Experimental Evidence";
Microelectronics Reliability, 87, (2018), 286 - 320 doi:10.1016/j.microrel.2017.12.021. BibTeX

169. B. Kaczer, J. Franco, P. Weckx, Ph. J. Roussel, V. Putcha, E. Bury, M. Simicic, A. Chasin, D. Linten, B. Parvais, F. Catthoor, G. Rzepa, M. Waltl, T. Grasser:
"A Brief Overview of Gate Oxide Defect Properties and Their Relation to MOSFET Instabilities and Device and Circuit Time-Dependent Variability";
Microelectronics Reliability, 81, (invited) (2018), 186 - 194 doi:10.1016/j.microrel.2017.11.022. BibTeX

168. T. Knobloch, G. Rzepa, Yu. Illarionov, M. Waltl, F. Schanovski, B. Stampfer, M. M. Furchi, T. Müller, T. Grasser:
"A Physical Model for the Hysteresis in MoS2 Transistors";
IEEE Journal of the Electron Devices Society, 6, (2018), 972 - 978 doi:10.1109/JEDS.2018.2829933. BibTeX

167. A. Makarov, S. E. Tyaginov, B. Kaczer, M. Jech, A. Chasin, A. Grill, G. Hellings, M. I. Vexler, D. Linten, T. Grasser:
"Analysis of the Features of Hot-Carrier Degradation in FinFETs";
Semiconductors (Physics of Semiconductor Devices), 52, (2018), 1177 - 1182 doi:10.1134/S1063782618100081. BibTeX

166. K. Puschkarsky, H. Reisinger, T. Aichinger, W. Gustin, T. Grasser:
"Understanding BTI in SiC MOSFETs and Its Impact on Circuit Operation";
IEEE Transactions on Device and Materials Reliability, 18, (2018), 144 - 153 doi:10.1109/TDMR.2018.2813063. BibTeX

165. K. Puschkarsky, H. Reisinger, W. Gustin, T. Grasser:
"Voltage-Dependent Activation Energy Maps for Analytic Lifetime Modeling of NBTI Without Time Extrapolation";
IEEE Transactions on Electron Devices, 65, (2018), 4764 - 4771 doi:10.1109/TED.2018.2870170. BibTeX

164. G. Rescher, G. Pobegen, T. Aichinger, T. Grasser:
"Comprehensive Evaluation of Bias Temperature Instabilities on 4H-SiC MOSFETs Using Device Preconditioning";
Materials Science Forum, 924, (2018), 671 - 675 doi:10.4028/www.scientific.net/MSF.924.671. BibTeX

163. G. Rescher, G. Pobegen, T. Aichinger, T. Grasser:
"Preconditioned BTI on 4H-SiC: Proposal for a Nearly Delay Time-Independent Measurement Technique";
IEEE Transactions on Electron Devices, 25, (2018), 1419 - 1426 doi:10.1109/TED.2018.2803283. BibTeX

162. G. Rzepa, J. Franco, B.J. O´Sullivan, A. Subirats, M. Simicic, G. Hellings, P. Weckx, M. Jech, T. Knobloch, M. Waltl, P. Roussel, D. Linten, B. Kaczer, T. Grasser:
"Comphy -- A Compact-Physics Framework for Unified Modeling of BTI";
Microelectronics Reliability, 85, (invited) (2018), 49 - 65 doi:10.1016/j.microrel.2018.04.002. BibTeX

161. B. Stampfer, F. Zhang, Yu. Illarionov, T. Knobloch, P. Wu, M. Waltl, A. Grill, J. Appenzeller, T. Grasser:
"Characterization of Single Defects in Ultrascaled MoS2 Field-Effect Transistors";
ACS Nano, 12, (2018), 5368 - 5375 doi:10.1021/acsnano.8b00268. BibTeX

160. J. Stathis, S. Mahapatra, T. Grasser:
"Controversial Issues in Negative Bias Temperature Instability";
Microelectronics Reliability, 81, (2018), 244 - 251 doi:10.1016/j.microrel.2017.12.035. BibTeX

159. S. E. Tyaginov, A. Makarov, M. Jech, M. I. Vexler, J. Franco, B. Kaczer, T. Grasser:
"Physical Principles of Self-Consistent Simulation of the Generation of Interface States and the Transport of Hot Charge Carriers in Field-Effect Transistors Based on Metal-Oxide-Semiconductor Structures";
Semiconductors (Physics of Semiconductor Devices), 52, (2018), 242 - 247 doi:10.1134/S1063782618020203. BibTeX

158. S. E. Tyaginov, A. Makarov, B. Kaczer, M. Jech, A. Chasin, A. Grill, G. Hellings, M. I. Vexler, D. Linten, T. Grasser:
"Impact of the Device Geometric Parameters on Hot-Carrier Degradation in FinFETs";
Semiconductors (Physics of Semiconductor Devices), 52, (2018), 1738 - 1742 doi:10.1134/S1063782618130183. BibTeX

157. Yu. Illarionov, T. Knobloch, M. Waltl, G. Rzepa, A. Pospischil, D.K Polyushkin, M. M. Furchi, T. Müller, T. Grasser:
"Energetic Mapping of Oxide Traps in MoS2 Field-Effect Transistors";
2D Materials, 4, (2017), 025108-1 - 025108-10 doi:10.1088/2053-1583/aa734a. BibTeX

156. Yu. Illarionov, K. Smithe, M. Waltl, T. Knobloch, E. Pop, T. Grasser:
"Improved Hysteresis and Reliability of MoS2 Transistors With High-Quality CVD Growth and Al2O3 Encapsulation";
IEEE Electron Device Letters, 38, (2017), 1763 - 1766 doi:10.1109/LED.2017.2768602. BibTeX

155. Yu. Illarionov, M. Waltl, G. Rzepa, T. Knobloch, J. Kim, D. Akinwande, T. Grasser:
"Highly-Stable Black Phosphorus Field-Effect Transistors with Low Density of Oxide Traps";
npj 2D Materials and Applications, 1, (2017), 23-1 - 23-7 doi:10.1038/s41699-017-0025-3. BibTeX

154. B. Kaczer, J. Franco, S. E. Tyaginov, M. Jech, G. Rzepa, T. Grasser, B.J. O´Sullivan, R. Ritzenhaler, T. Schram, A. Spessot, D. Linten, N. Horiguchi:
"Mapping of CMOS FET Degradation in Bias Space--Application to Dram Peripheral Devices";
Journal of Vacuum Science & Technology B, 35, (2017), 01A109-1 - 01A109-6 doi:10.1116/1.4972872. BibTeX

153. C. Ostermaier, P. Lagger, G. Prechtl, A. Grill, T. Grasser, D. Pogany:
"Dynamics of Carrier Transport via AlGaN Barrier in AlGaN/GaN MIS-HEMTs";
Applied Physics Letters, 110, (2017), 1 - 4 doi:10.1063/1.4982231. BibTeX

152. G. Rescher, G. Pobegen, T. Aichinger, T. Grasser:
"Improved Interface Trap Density Close to the Conduction Band Edge of a-Face 4H-SiC MOSFETs Revealed Using the Charge Pumping Technique";
Materials Science Forum, 897, (2017), 143 - 146 doi:10.4028/www.scientific.net/MSF.897.143. BibTeX

151. P. Sharma, S. E. Tyaginov, S. E. Rauch, J. Franco, A. Makarov, M. I. Vexler, B. Kaczer, T. Grasser:
"Hot-Carrier Degradation Modeling of Decananometer nMOSFETs Using the Drift-Diffusion Approach";
IEEE Electron Device Letters, 38, (2017), 160 - 163 doi:10.1109/LED.2016.2645901. BibTeX

150. X. Song, F. Hui, T. Knobloch, B. Wang, Z. Fan, T. Grasser, X. Jing, Y. Shi, M. Lanza:
"Piezoelectricity in Two Dimensions: Graphene vs. Molybdenum Disulfide";
Applied Physics Letters, 111, (2017), 083107-1 - 083107-4 doi:10.1063/1.5000496. BibTeX

149. R. Stradiotto, G. Pobegen, C. Ostermaier, M. Waltl, A. Grill, T. Grasser:
"Characterization of Interface Defects With Distributed Activation Energies in GaN-Based MIS-HEMTs";
IEEE Transactions on Electron Devices, 64, (2017), 1045 - 1052 doi:10.1109/TED.2017.2655367. BibTeX

148. B. Ullmann, T. Grasser:
"Transformation: Nanotechnology - Challenges in Transistor Design and Future Technologies";
E&I Elektrotechnik und Informationstechnik, 134, (2017), 349 - 354 doi:10.1007/s00502-017-0534-y. BibTeX

147. M. Waltl, G. Rzepa, A. Grill, W. Gös, J. Franco, B. Kaczer, L. Witters, J. Mitard, N. Horiguchi, T. Grasser:
"Superior NBTI in High-k SiGe Transistors - Part I: Experimental";
IEEE Transactions on Electron Devices, 64, (2017), 2092 - 2098 doi:10.1109/TED.2017.2686086. BibTeX

146. M. Waltl, G. Rzepa, A. Grill, W. Gös, J. Franco, B. Kaczer, L. Witters, J. Mitard, N. Horiguchi, T. Grasser:
"Superior NBTI in High-k SiGe Transistors - Part II: Theory";
IEEE Transactions on Electron Devices, 64, (2017), 2099 - 2105 doi:10.1109/TED.2017.2686454. BibTeX

145. Yu. Illarionov, G. Rzepa, M. Waltl, T. Knobloch, A. Grill, M. M. Furchi, T. Müller, T. Grasser:
"The Role of Charge Trapping in MoS2/SiO2 and MoS2/hBN Field-Effect Transistors";
2D Materials, 3, (2016), 035004-1 - 035004-10 doi:10.1088/2053-1583/3/3/035004. BibTeX

144. Yu. Illarionov, M. Waltl, G. Rzepa, J. Kim, S. Kim, A. Dodabalapur, D. Akinwande, T. Grasser:
"Long-Term Stability and Reliability of Black Phosphorus Field-Effect Transistors";
ACS Nano, 10, (2016), 9543 - 9549 doi:10.1021/acsnano.6b04814. BibTeX

143. Yu. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, M. Lemme, T. Grasser:
"Bias-Temperature Instability on the Back Gate of Single-Layer Double-Gated Graphene Field-Effect Transistors";
Japanese Journal of Applied Physics, 55, (2016), 04EP03 doi:10.7567/JJAP.55.04EP03. BibTeX

142. M. Jech, P. Sharma, S. E. Tyaginov, F. Rudolf, T. Grasser:
"On the Limits of Applicability of Drift-Diffusion Based Hot Carrier Degradation Modeling";
Japanese Journal of Applied Physics, 55, (2016), 1 - 6 doi:10.7567/JJAP.55.04ED14. BibTeX

141. X. Jing, E. Panholzer, X. Song, E. Grustan-Gutierrez, F. Hui, Y. Shi, G. Benstetter, Yu. Illarionov, T. Grasser, M. Lanza:
"Fabrication of Scalable and Ultra Low Power Photodetectors with High Light/Dark Current Ratios Using Polycrystalline Monolayer MoS2 Sheets";
Nano Energy, 30, (2016), 494 - 502 doi:10.1016/j.nanoen.2016.10.032. BibTeX

140. B. Kaczer, J. Franco, P. Weckx, Ph. J. Roussel, M. Simicic, V. Putcha, E. Bury, M. Cho, R. Degraeve, D. Linten, G. Groeseneken, P. Debacker, B. Parvais, P. Raghavan, F. Catthoor, G. Rzepa, M. Waltl, W. Gös, T. Grasser:
"The Defect-Centric Perspective of Device and Circuit Reliability - From Gate Oxide Defects to Circuits";
Solid-State Electronics, 125, (2016), 52 - 62 doi:10.1016/j.sse.2016.07.010. BibTeX

139. G. Rescher, G. Pobegen, T. Grasser:
"Threshold Voltage Instabilities of Present SiC-Power MOSFETs Under Positive Bias Temperature Stress";
Materials Science Forum, 858, (2016), 481 - 484 doi:10.4028/www.scientific.net/MSF.858.481. BibTeX

138. K. Rupp, C. Jungemann, S.-M Hong, M. Bina, T. Grasser, A. Jüngel:
"A Review of Recent Advances in the Spherical Harmonics Expansion Method for Semiconductor Device Simulation";
Journal of Computational Electronics, 15, (2016), 939 - 958 doi:10.1007/s10825-016-0828-z. BibTeX

137. K. Rupp, Ph. Tillet, F. Rudolf, J. Weinbub, A. Morhammer, T. Grasser, A. Jüngel, S. Selberherr:
"ViennaCL---Linear Algebra Library for Multi- and Many-Core Architectures";
SIAM Journal on Scientific Computing, 38, (2016), S412 - S439 doi:10.1137/15M1026419. BibTeX

136. K. Rupp, J. Weinbub, A. Jüngel, T. Grasser:
"Pipelined Iterative Solvers with Kernel Fusion for Graphics Processing Units";
ACM Transactions on Mathematical Software, 43, (2016), 11:1 - 11:27 doi:10.1145/2907944. BibTeX

135. P. Sharma, S. E. Tyaginov, M. Jech, Y. Wimmer, F. Rudolf, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser:
"The Role of Cold Carriers and the Multiple-Carrier Process of Si-H Bond Dissociation for Hot-Carrier Degradation in n- and p-channel LDMOS Devices";
Solid-State Electronics, 115, (2016), 185 - 191 doi:10.1016/j.sse.2015.08.014. BibTeX

134. R. Stradiotto, G. Pobegen, C. Ostermaier, T. Grasser:
"Characterization of Charge Trapping Phenomena at III-N/Dielectric Interfaces";
Solid-State Electronics, 125, (2016), 142 - 153 doi:10.1016/j.sse.2016.07.017. BibTeX

133. S. E. Tyaginov, M. Jech, J. Franco, P. Sharma, B. Kaczer, T. Grasser:
"Understanding and Modeling the Temperature Behavior of Hot-Carrier Degradation in SiON n-MOSFETs";
IEEE Electron Device Letters, 37, (2016), 84 - 87 doi:10.1109/LED.2015.2503920. BibTeX

132. Y. Wimmer, A.-M. El-Sayed, W. Gös, T. Grasser, A. Shluger:
"Role of Hydrogen in Volatile Behaviour of Defects in SiO2-Based Electronic Devices";
Proceedings of the Royal Society A - Mathematical, Physical and Engineering Sciences, 472, (invited) (2016), 1 - 23 doi:10.1098/rspa.2016.0009. BibTeX

131. R. Coppeta, D. Holec, H. Ceric, T. Grasser:
"Evaluation of Dislocation Energy in Thin Films";
Philosophical Magazine, 95, (2015), 186 - 209 doi:10.1080/14786435.2014.994573. BibTeX

130. A. El-Sayed, M. Watkins, T. Grasser, V. Afanas´Ev, A. Shluger:
"Hole Trapping at Hydrogenic Defects in Amorphous Silicon Dioxide";
Microelectronic Engineering, 147, (2015), 141 - 144 doi:10.1016/j.mee.2015.04.073. BibTeX

129. A. El-Sayed, M. Watkins, T. Grasser, V. Afanas´Ev, A. Shluger:
"Hydrogen-Induced Rupture of Strained Si-O Bonds in Amorphous Silicon Dioxide";
Physical Review Letters, 114, (2015), 115503-1 - 115503-5 doi:10.1103/PhysRevLett.114.115503. BibTeX

128. A. El-Sayed, Y. Wimmer, W. Gös, T. Grasser, V. Afanas´Ev, A. Shluger:
"Theoretical Models of Hydrogen-Induced Defects in Amorphous Silicon Dioxide";
Physical Review B, 92, (2015), 014107-1 - 014107-11 doi:10.1103/PhysRevB.92.014107. BibTeX

127. Yu. Illarionov, M. Bina, S. E. Tyaginov, K. Rott, B. Kaczer, H. Reisinger, T. Grasser:
"Extraction of the Lateral Position of Border Traps in Nanoscale MOSFETs";
IEEE Transactions on Electron Devices, 62, (2015), 2730 - 2737 doi:10.1109/TED.2015.2454433. BibTeX

126. Yu. Illarionov, A. Smith, S. Vaziri, M. Ostling, T. Müller, M. Lemme, T. Grasser:
"Hot-Carrier Degradation and Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors: Similarities and Differences";
IEEE Transactions on Electron Devices, 62, (2015), 3876 - 3881 doi:10.1109/TED.2015.2480704. BibTeX

125. Yu. Illarionov, M. I. Vexler, M. Karner, S. E. Tyaginov, J. Cervenka, T. Grasser:
"TCAD Simulation of Tunneling Leakage Current in CaF2/Si(111) MIS Structures";
Current Applied Physics, 15, (2015), 78 - 83 doi:10.1016/j.cap.2014.10.015. BibTeX

124. B. Kaczer, J. Franco, Ph. J. Roussel, G. Groeseneken, T. Chiarella, N. Horiguchi, T. Grasser:
"Extraction of The Random Component of Time-Dependent Variability Using Matched Pairs";
IEEE Electron Device Letters, 36, (2015), 300 - 302 doi:10.1109/LED.2015.2404293. BibTeX

123. P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, K. Rupp, M. Bina, H. Enichlmair, J.M. Park, R. Minixhofer, H. Ceric, T. Grasser:
"Modeling of Hot-Carrier Degradation in nLDMOS Devices: Different Approaches to the Solution of the Boltzmann Transport Equation";
IEEE Transactions on Electron Devices, 62, (2015), 1811 - 1818 doi:10.1109/TED.2015.2421282. BibTeX

122. P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, K. Rupp, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser:
"Comparison of Analytic Distribution Function Models for Hot-Carrier Degradation in nLDMOSFETs";
Microelectronics Reliability, 55, (2015), 1427 - 1432 doi:10.1016/j.microrel.2015.06.021. BibTeX

121. S. E. Tyaginov, M. Bina, J. Franco, Y. Wimmer, B. Kaczer, T. Grasser:
"On the Importance of Electron-Electron Scattering for Hot-Carrier Degradation";
Japanese Journal of Applied Physics, 54, (2015), 1 - 6 doi:10.7567/JJAP.54.04DC18. BibTeX

120. M. I. Vexler, Yu. Illarionov, S. E. Tyaginov, T. Grasser:
"Adaptation of the Model of Tunneling in a Metal/CaF2/Si(111) System for Use in Industrial Simulators of MIS Devices";
Semiconductors (Physics of Semiconductor Devices), 49, (2015), 259 - 263 doi:10.1134/S1063782615020207. BibTeX

119. M. Bina, S. E. Tyaginov, J. Franco, K. Rupp, Y. Wimmer, D. Osintsev, B. Kaczer, T. Grasser:
"Predictive Hot-Carrier Modeling of n-Channel MOSFETs";
IEEE Transactions on Electron Devices, 61, (2014), 3103 - 3110 doi:10.1109/TED.2014.2340575. BibTeX

118. V. V. A. Camargo, B. Kaczer, T. Grasser, G. Wirth:
"Circuit Simulation of Workload-Dependent RTN and BTI Based on Trap Kinetics";
Microelectronics Reliability, 54, (2014), 2364 - 2370. BibTeX

117. T. Grasser, K. Rott, H. Reisinger, M. Waltl, F. Schanovsky, B. Kaczer:
"NBTI in Nanoscale MOSFETs-The Ultimate Modeling Benchmark";
IEEE Transactions on Electron Devices, 61, (2014), 3586 - 3593 doi:10.1109/TED.2014.2353578. BibTeX

116. Yu. Illarionov, M. Bina, S. E. Tyaginov, T. Grasser:
"An Analytical Approach for the Determination of the Lateral Trap Position in Ultra-Scaled MOSFETs";
Japanese Journal of Applied Physics, 53, (2014), 04EC22-1 - 04EC22-4 doi:10.7567/JJAP.53.04EC22. BibTeX

115. Yu. Illarionov, A. Smith, S. Vaziri, M. Ostling, T. Müller, M. Lemme, T. Grasser:
"Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors";
Applied Physics Letters, 105, (2014), 1435071 - 1435075 doi:10.1063/1.4897344. BibTeX

114. G. Pobegen, T. Aichinger, A. Salinaro, T. Grasser:
"Impact of Hot Carrier Degradation and Positive Bias Temperature Stress on Lateral 4H-SiC nMOSFETs";
Materials Science Forum, 778-780, (2014), 959 - 962 doi:10.4028/www.scientific.net/MSF.778-780.959. BibTeX

113. G.A. Rott, K. Rott, H. Reisinger, W. Gustin, T. Grasser:
"Mixture of Negative Bias Temperature Instability and Hot-Carrier Driven Threshold Voltage Degradation of 130 nm Technology p-Channel Transistors";
Microelectronics Reliability, 54, (2014), 2310 - 2314 doi:10.1016/j.microrel.2014.07.040. BibTeX

112. K. Rupp, Ph. Tillet, A. Jüngel, T. Grasser:
"Achieving Portable High Performance for Iterative Solvers on Accelerators";
Proceedings in Applied Mathematics and Mechanics, 14, (2014), 963 - 964 doi:10.1002/pamm.201410462. BibTeX

111. S. E. Tyaginov, Yu. Illarionov, M. I. Vexler, M. Bina, J. Cervenka, J. Franco, B. Kaczer, T. Grasser:
"Modeling of Deep-Submicron Silicon-Based MISFETs with Calcium Fluoride Dielectric";
Journal of Computational Electronics, 13, (2014), 733 - 738 doi:10.1007/s10825-014-0593-9. BibTeX

110. S. E. Tyaginov, Y. Wimmer, T. Grasser:
"Modeling of Hot-Carrier Degradation Based on Thorough Carrier Transport Treatment";
Facta Universitatis, 27, (invited) (2014), 479 - 508 doi:10.2298/FUEE1404479T. BibTeX

109. T. Aichinger, M. Nelhiebel, T. Grasser:
"Refined NBTI Characterization of Arbitrarily Stressed PMOS Devices at Ultra-low and Unique Temperatures";
Microelectronics Reliability, 53, (2013), 937 - 946 doi:10.1016/j.microrel.2013.03.007. BibTeX

108. V. V. A. Camargo, B. Kaczer, G. Wirth, T. Grasser, G. Groeseneken:
"Use of SSTA Tools for Evaluating BTI Impact on Combinational Circuits";
IEEE Transactions on Very Large Scale Integration (VLSI) Systems, PP, (2013), doi:10.1109/TVLSI.2013.2240323. BibTeX

107. J. Franco, B. Kaczer, J. Mitard, M. Toledano-Luque, Ph. J. Roussel, L. Witters, T. Grasser, G Groeseneken:
"NBTI Reliability of SiGe and Ge Channel pMOSFETs With SiO2/HfO2 Dielectric Stack";
IEEE Transactions on Device and Materials Reliability, 13, (invited) (2013), 497 - 506 doi:10.1109/TDMR.2013.2281731. BibTeX

106. J. Franco, B. Kaczer, Ph. J. Roussel, J. Mitard, M. Cho, L. Witters, T. Grasser, G. Groeseneken:
"SiGe Channel Technology: Superior Reliability Toward Ultrathin EOT Devices-Part I: NBTI";
IEEE Transactions on Electron Devices, 60, (2013), 396 - 404 doi:10.1109/TED.2012.2225625. BibTeX

105. J. Franco, B. Kaczer, M. Toledano-Luque, Ph. J. Roussel, M. Choa, T. Kauerauf, J. Mitard, G. Eneman, L. Witters, T. Grasser, G. Groeseneken:
"Superior Reliability of High Mobility (Si)Ge Channel pMOSFETs";
Microelectronic Engineering, 109, (2013), 250 - 256 doi:10.1016/j.mee.2013.03.001. BibTeX

104. J. Franco, B. Kaczer, M. Toledano-Luque, Ph. J. Roussel, T. Kauerauf, J. Mitard, L. Witters, T. Grasser, G. Groeseneken:
"SiGe Channel Technology: Superior Reliability Toward Ultra-Thin EOT Devices-Part II: Time-Dependent Variability in Nanoscaled Devices and Other Reliability Issues";
IEEE Transactions on Electron Devices, 60, (2013), 405 - 412. BibTeX

103. B. Kaczer, M. Toledano-Luque, W. Gös, T. Grasser, G. Groeseneken:
"Gate Current Random Telegraph Noise and Single Defect Conduction";
Microelectronic Engineering, 109, (2013), 123 - 125 doi:10.1016/j.mee.2013.03.110. BibTeX

102. G. Pobegen, T. Grasser:
"Efficient Characterization of Threshold Voltage Instabilities in SiC nMOSFETs Using the Concept of Capture-Emission-Time Maps";
Materials Science Forum, 740-742, (2013), 757 - 760 doi:10.4028/www.scientific.net/MSF.740-742.757. BibTeX

101. G. Pobegen, T. Grasser:
"On the Distribution of NBTI Time Constants on a Long, Temperature-Accelerated Time Scale";
IEEE Transactions on Electron Devices, 60, (2013), 2148 - 2155 doi:10.1109/TED.2013.2264816. BibTeX

100. G. Pobegen, M. Nelhiebel, S. de Filippis, T. Grasser:
"Accurate High Temperature Measurements Using Local Polysilicon Heater Structures";
IEEE Transactions on Device and Materials Reliability, 99, (2013), 1 - 8 doi:10.1109/TDMR.2013.2265015. BibTeX

99. G. Pobegen, S. E. Tyaginov, M. Nelhiebel, T. Grasser:
"Observation of Normally Distributed Energies for Interface Trap Recovery After Hot-Carrier Degradation";
IEEE Electron Device Letters, 34, (2013), 939 - 941 doi:10.1109/LED.2013.2262521. BibTeX

98. M. Toledano-Luque, B. Kaczer, T. Grasser, Ph. J. Roussel, J. Franco, G. Groeseneken:
"Toward a Streamlined Projection of Small Device Bias Temperature Instability Lifetime Distributions";
Journal of Vacuum Science & Technology B, 31, (2013), 01A114-1 - 01A114-4 doi:10.1116/1.4772587. BibTeX

97. J. Franco, S. Graziano, B. Kaczer, F. Crupi, L. Ragnarsson, T. Grasser, G. Groeseneken:
"BTI Reliability of Ultra-Thin EOT MOSFETs for Sub-Threshold Logic";
Microelectronics Reliability, 52, (2012), 1932 - 1935 doi:10.1016/j.microrel.2012.06.058. BibTeX

96. J. Franco, B. Kaczer, M. Toledano-Luque, M. F. Bukhori, Ph. J. Roussel, T. Grasser, A. Asenov, G. Groeseneken:
"Impact of Individual Charged Gate-Oxide Defects on the Entire ID -VG Characteristic of Nanoscaled FETs";
IEEE Electron Device Letters, 33, (2012), 779 - 781. BibTeX

95. T. Grasser:
"Stochastic Charge Trapping in Oxides: From Random Telegraph Noise to Bias Temperature Instabilities";
Microelectronics Reliability, 52, (invited) (2012), 39 - 70 doi:10.1016/j.microrel.2011.09.002. BibTeX

94. K. Rott, H. Reisinger, S. Aresu, C. Schlünder, K. Kölpin, W. Gustin, T. Grasser:
"New Insights on the PBTI Phenomena in SiON pMOSFETs";
Microelectronics Reliability, 52, (2012), 1891 - 1894 doi:10.1016/j.microrel.2012.06.015. BibTeX

93. F. Schanovsky, O. Baumgartner, V. Sverdlov, T. Grasser:
"A Multi Scale Modeling Approach to Non-Radiative Multi Phonon Transitions at Oxide Defects in MOS Structures";
Journal of Computational Electronics, 11, (2012), 218 - 224 doi:10.1007/s10825-012-0403-1. BibTeX

92. M. Toledano-Luque, B. Kaczer, J. Franco, Ph. J. Roussel, T. Grasser, G. Groeseneken:
"Defect-Centric Perspective of Time-Dependent BTI Variability";
Microelectronics Reliability, 52, (2012), 1883 - 1890 doi:10.1016/j.microrel.2012.06.120. BibTeX

91. M. Vasicek, J. Cervenka, D. Esseni, P. Palestri, T. Grasser:
"Applicability of Macroscopic Transport Models to Decananometer MOSFETs";
IEEE Transactions on Electron Devices, 59, (2012), 639 - 646 doi:10.1109/TED.2011.2181177. BibTeX

90. J. Franco, B. Kaczer, M. Toledano-Luque, Ph. J. Roussel, Ph. Hehenberger, T. Grasser, J. Mitard, G. Eneman, T. Y. Hoffmann, G. Groeseneken:
"On the Impact of the Si Passivation Layer Thickness on the NBTI of Nanoscaled Si0.45Ge0.55 pMOSFETs";
Microelectronic Engineering, 88, (2011), 1388 - 1391 doi:10.1016/j.mee.2011.03.065. BibTeX

89. W. Gös, F. Schanovsky, H. Reisinger, B. Kaczer, T. Grasser:
"Bistable Defects as the Cause for NBTI and RTN";
Solid State Phenomena, 178-179, (invited) (2011), 473 - 482 doi:10.4028/www.scientific.net/SSP.178-179.473. BibTeX

88. T. Grasser, B. Kaczer, W. Gös, H. Reisinger, T. Aichinger, Ph. Hehenberger, P.-J. Wagner, F. Schanovsky, J. Franco, M. Toledano-Luque, M. Nelhiebel:
"The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction-Diffusion to Switching Oxide Traps";
IEEE Transactions on Electron Devices, 58, (invited) (2011), 3652 - 3666. BibTeX

87. B. Kaczer, T. Grasser, J. Franco, M. Toledano-Luque, Ph. J. Roussel, M. Cho, E. Simoen, G. Groeseneken:
"Recent Trends in Bias Temperature Instability";
Journal of Vacuum Science & Technology B, 29, (invited) (2011), 01AB01-1 - 01AB01-7. BibTeX

86. G. Pobegen, T. Aichinger, T. Grasser, M. Nelhiebel:
"Impact of Gate Poly Doping and Oxide Thickness on the N- and PBTI in MOSFETs";
Microelectronics Reliability, 51, (2011), 1530 - 1534 doi:10.1016/j.microrel.2011.06.024. BibTeX

85. F. Schanovsky, W. Gös, T. Grasser:
"Multiphonon Hole Trapping from First Principles";
Journal of Vacuum Science & Technology B, 29, (2011), 01A201-1 - 01A201-5 doi:10.1116/1.3533269. BibTeX

84. I. Starkov, S. E. Tyaginov, H. Enichlmair, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Ceric, T. Grasser:
"Hot-Carrier Degradation Caused Interface State Profile-Simulation versus Experiment";
Journal of Vacuum Science & Technology B, 29, (2011), 01AB09-1 - 01AB09-8 doi:10.1116/1.3534021. BibTeX

83. I. Starkov, S. E. Tyaginov, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser:
"Accurate Extraction of MOSFET Unstressed Interface State Spatial Distribution from Charge Pumping Measurements";
Solid State Phenomena, 178-179, (2011), 267 - 272 doi:10.4028/www.scientific.net/SSP.178-179.267. BibTeX

82. M. Toledano-Luque, B. Kaczer, Ph. J. Roussel, M. Cho, T. Grasser, G. Groeseneken:
"Temperature Dependence of the Emission and Capture Times of SiON Individual Traps after Positive Bias Temperature Stress";
Journal of Vacuum Science & Technology B, 29, (2011), 01AA04-1 - 01AA04-5 doi:10.1116/1.3532947. BibTeX

81. M. Toledano-Luque, B. Kaczer, Ph. J. Roussel, J. Franco, L. Ragnarsson, T. Grasser, G. Groeseneken:
"Depth Localization of Positive Charge Trapped in Silicon Oxynitride Field Effect Transistors after Positive and Negative Gate Bias Temperature Stress";
Applied Physics Letters, 98, (2011), 183506-1 - 183506-3 doi:10.1063/1.3586780. BibTeX

80. M. Toledano-Luque, B. Kaczer, E. Simoen, Ph. J. Roussel, A. Veloso, T. Grasser, G. Groeseneken:
"Temperature and Voltage Dependences of the Capture and Emission Times of Individual Traps in High-k Dielectrics";
Microelectronic Engineering, 88, (2011), 1243 - 1246 doi:10.1016/j.mee.2011.03.097. BibTeX

79. S. E. Tyaginov, I. Starkov, H. Enichlmair, C. Jungemann, J.M. Park, E. Seebacher, R. Orio, H. Ceric, T. Grasser:
"An Analytical Approach for Physical Modeling of Hot-Carrier Induced Degradation";
Microelectronics Reliability, 51, (2011), 1525 - 1529 doi:10.1016/j.microrel.2011.07.089. BibTeX

78. T. Aichinger, M. Nelhiebel, S. Einspieler, T. Grasser:
"In Situ Poly Heater-A Reliable Tool for Performing Fast and Defined Temperature Switches on Chip";
IEEE Transactions on Device and Materials Reliability, 10, (2010), 3 - 8. BibTeX

77. T. Aichinger, M. Nelhiebel, S. Einspieler, T. Grasser:
"Observing Two Stage Recovery of Gate Oxide Damage Created under Negative Bias Temperature Stress";
Journal of Applied Physics, 107, (2010), 024508-1 - 024508-8. BibTeX

76. T. Aichinger, M. Nelhiebel, T. Grasser:
"Energetic Distribution of Oxide Traps created under Negative Bias Temperature Stress and their Relation to Hydrogen";
Applied Physics Letters, 96, (2010), 133511-1 - 133511-3. BibTeX

75. T. Grasser, H. Reisinger, P.-J. Wagner, B. Kaczer:
"Time-Dependent Defect Spectroscopy for Characterization of Border Traps in Metal-Oxide-Semiconductor Transistors";
Physical Review B, 82, (2010), 245318-1 - 245318-10 doi:10.1103/PhysRevB.82.245318. BibTeX

74. B. Kaczer, Ph. J. Roussel, T. Grasser, G. Groeseneken:
"Statistics of Multiple Trapped Charges in the Gate Oxide of Deeply Scaled MOSFET Devices-Application to NBTI";
IEEE Electron Device Letters, 31, (2010), 411 - 413 doi:10.1109/LED.2010.2044014. BibTeX

73. K. Rupp, A. Jüngel, T. Grasser:
"Matrix Compression for Spherical Harmonics Expansions of the Boltzmann Transport Equation for Semiconductors";
Journal of Computational Physics, 229, (2010), 8750 - 8765. BibTeX

72. J. Ryan, P. Lenahan, T. Grasser, H. Enichlmair:
"Observations of Negative Bias Temperature Instability Defect Generation via On The Fly Electron Spin Resonance";
Applied Physics Letters, 96, (2010), 223509-1 - 223509-3 doi:10.1063/1.3428783. BibTeX

71. F. Schanovsky, W. Gös, T. Grasser:
"An Advanced Description of Oxide Traps in MOS Transistors and its Relation to DFT";
Journal of Computational Electronics, 9, (invited) (2010), 135 - 140 doi:10.1007/s10825-010-0323-x. BibTeX

70. S. E. Tyaginov, I. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser:
"Interface Traps Density-of-States as a Vital Component for Hot-Carrier Degradation Modeling";
Microelectronics Reliability, 50, (2010), 1267 - 1272 doi:10.1016/j.microrel.2010.0. BibTeX

69. T. Aichinger, M. Nelhiebel, T. Grasser:
"A Combined Study of p- and n-Channel MOS Devices to Investigate the Energetic Distribution of Oxide Traps After NBTI";
IEEE Transactions on Electron Devices, 56, (2009), 3018 - 3026. BibTeX

68. T. Grasser, B. Kaczer:
"Evidence That Two Tightly Coupled Mechanisms Are Responsible for Negative Bias Temperature Instability in Oxynitride MOSFETs";
IEEE Transactions on Electron Devices, 56, (2009), 1056 - 1062 doi:10.1109/TED.2009.2015160. BibTeX

67. T. Grasser, B. Kaczer, W. Gös, T. Aichinger, Ph. Hehenberger, M. Nelhiebel:
"Understanding Negative Bias Temperature Instability in the Context of Hole Trapping";
Microelectronic Engineering, 86, (invited) (2009), 1876 - 1882. BibTeX

66. Ph. Hehenberger, P.-J. Wagner, H. Reisinger, T. Grasser:
"On the Temperature and Voltage Dependence of Short-Term Negative Bias Temperature Stress";
Microelectronics Reliability, 49, (2009), 1013 - 1017 doi:10.1016/j.microrel.2009.06.040. BibTeX

65. B. Kaczer, A. Veloso, Ph. J. Roussel, T. Grasser, G. Groeseneken:
"Investigation of Bias-Temperature Instability in Work-Function-Tuned High-k/Metal-Gate Stacks";
Journal of Vacuum Science & Technology B, 27, (2009), 459 - 462. BibTeX

64. H. Reisinger, R. Vollertsen, P.-J. Wagner, T. Huttner, A. Martin, S. Aresu, W. Gustin, T. Grasser, C. Schlünder:
"A Study of NBTI and Short-Term Threshold Hysteresis of Thin Nitrided and Thick Non-Nitrided Oxides";
IEEE Transactions on Device and Materials Reliability, 9, (2009), 106 - 114 doi:10.1109/TDMR.2009.2021389. BibTeX

63. S. E. Tyaginov, V. Sverdlov, I. Starkov, W. Gös, T. Grasser:
"Impact of O-Si-O Bond Angle Fluctuations on the Si-O Bond-Breakage Rate";
Microelectronics Reliability, 49, (2009), 998 - 1002 doi:10.1016/j.microrel.2009.06.018. BibTeX

62. S. E. Tyaginov, M. Vexler, N. S. Sokolov, S. M. Suturin, A. Banshchikov, T. Grasser, B. Meinerzhagen:
"Determination of Correlation Length for Thickness Fluctuations in Thin Oxide and Fluoride Films";
Journal of Physics D: Applied Physics, 42, (2009), 1 - 6 doi:10.1088/0022-3727/42/11/115307. BibTeX

61. M. Vexler, N. S. Sokolov, S. M. Suturin, A. Banshchikov, S. E. Tyaginov, T. Grasser:
"Electrical Characterization and Modeling of the Au/CaF2/nSi(111) Sructures with High-Quality Tunnel-Thin Fluoride Layer";
Journal of Applied Physics, 105, (2009), 1 - 6 doi:10.1063/1.3110066. BibTeX

60. T. Aichinger, M. Nelhiebel, T. Grasser:
"On the Temperature Dependence of NBTI Recovery";
Microelectronics Reliability, 48, (2008), 1178 - 1184 doi:10.1016/j.microrel.2008.06.018. BibTeX

59. W. Gös, M. Karner, V. Sverdlov, T. Grasser:
"Charging and Discharging of Oxide Defects in Reliability Issues";
IEEE Transactions on Device and Materials Reliability, 8, (2008), 491 - 500 doi:10.1109/TDMR.2008.2005247. BibTeX

58. T. Grasser, W. Gös, B. Kaczer:
"Dispersive Transport and Negative Bias Temperature Instability: Boundary Conditions, Initial Conditions, and Transport Models";
IEEE Transactions on Device and Materials Reliability, 8, (invited) (2008), 79 - 97 doi:10.1109/TDMR.2007.912779. BibTeX

57. T. Grasser, P.-J. Wagner, Ph. Hehenberger, W. Gös, B. Kaczer:
"A Rigorous Study of Measurement Techniques for Negative Bias Temperature Instability";
IEEE Transactions on Device and Materials Reliability, 8, (2008), 526 - 535 doi:10.1109/TDMR.2008.2002353. BibTeX

56. P. Lenahan, B. Knowlton, J. Conley, B. Tonti, J. Suehle, T. Grasser:
"Introduction to the Special Issue on the 2007 International Integrated Reliability Workshop";
IEEE Transactions on Device and Materials Reliability, 8, (2008), 490. BibTeX

55. K. Martens, B. Kaczer, T. Grasser, B. Jaeger, M. Meuris, H.E. Maes, G. Groeseneken:
"Applicability of Charge Pumping on Germanium MOSFETs";
IEEE Electron Device Letters, 29, (2008), 1364 - 1366 doi:10.1109/LED.2008.2007582. BibTeX

54. M. Vasicek, J. Cervenka, M. Wagner, M. Karner, T. Grasser:
"A 2D Non-Parabolic Six-Moments Model";
Solid-State Electronics, 52, (2008), 1606 - 1609 doi:10.1016/j.sse.2008.06.010. BibTeX

53. M. Vasicek, J. Cervenka, M. Wagner, M. Karner, T. Grasser:
"Parameter Modeling for Higher-Order Transport Models in UTB SOI MOSFETs";
Journal of Computational Electronics, 7, (2008), 168 - 173 doi:10.1007/s10825-008-0239-x. BibTeX

52. S. Dhar, E. Ungersböck, H. Kosina, T. Grasser, S. Selberherr:
"Electron Mobility Model for <110> Stressed Silicon Including Strain-Dependent Mass";
IEEE Transactions on Nanotechnology, 6, (2007), 97 - 100 doi:10.1109/TNANO.2006.888533. BibTeX

51. R. Entner, T. Grasser, O. Triebl, H. Enichlmair, R. Minixhofer:
"Negative Bias Temperature Instability Modeling for High-Voltage Oxides at Different Stress Temperatures";
Microelectronics Reliability, 47, (2007), 697 - 699. BibTeX

50. T. Grasser, S. Selberherr:
"Modeling of Negative Bias Temperature Instability";
Journal of Telecommunications and Information Technology, 7, (invited) (2007), 92 - 102. BibTeX

49. S. Holzer, A. Sheikholeslami, M. Karner, T. Grasser, S. Selberherr:
"Comparison of Deposition Models for a TEOS LPCVD Process";
Microelectronics Reliability, 47, (2007), 623 - 625 doi:10.1016/j.microrel.2007.01.058. BibTeX

48. M. Karner, A. Gehring, S. Holzer, M. Pourfath, M. Wagner, W. Gös, M. Vasicek, O. Baumgartner, Ch. Kernstock, K. Schnass, G. Zeiler, T. Grasser, H. Kosina, S. Selberherr:
"A Multi-Purpose Schrödinger-Poisson Solver for TCAD Applications";
Journal of Computational Electronics, 6, (2007), 179 - 182 doi:10.1007/s10825-006-0077-7. BibTeX

47. M. Karner, A. Gehring, M. Wagner, R. Entner, S. Holzer, W. Gös, M. Vasicek, T. Grasser, H. Kosina, S. Selberherr:
"VSP - A Gate Stack Analyzer";
Microelectronics Reliability, 47, (2007), 704 - 708 doi:10.1016/j.microrel.2007.01.059. BibTeX

46. G. Span, M. Wagner, T. Grasser, L. Holmgren:
"Miniaturized TEG with Thermal Generation of Free Carriers";
Physica Status Solidi - Rapid Research Letters, 1, (2007), 241 - 243 doi:10.1002/pssr.200701171. BibTeX

45. M. Spevak, T. Grasser:
"Discretization of Macroscopic Transport Equations on Non-Cartesian Coordinate Systems";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 26, (2007), 1408 - 1416. BibTeX

44. O. Triebl, T. Grasser:
"Vector Discretization Schemes in Technology CAD Environments";
Romanian Journal of Information Science and Technology, 10, (2007), 167 - 176. BibTeX

43. M. Wagner, M. Karner, J. Cervenka, M. Vasicek, H. Kosina, S. Holzer, T. Grasser:
"Quantum Correction for DG MOSFETs";
Journal of Computational Electronics, 5, (2007), 397 - 400 doi:10.1007/s10825-006-0032-7. BibTeX

42. M. Wagner, G. Span, S. Holzer, T. Grasser:
"Thermoelectric Power Generation Using Large-Area Si/SiGe pn-Junctions with Varying Ge Content";
Semiconductor Science and Technology, 22, (2007), 173 - 176. BibTeX

41. J. Cervenka, W. Wessner, E. Al-Ani, T. Grasser, S. Selberherr:
"Generation of Unstructured Meshes for Process and Device Simulation by Means of Partial Differential Equations";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 25, (2006), 2118 - 2128 doi:10.1109/TCAD.2006.876514. BibTeX

40. S. Dhar, H. Kosina, G. Karlowatz, E. Ungersböck, T. Grasser, S. Selberherr:
"High-Field Electron Mobility Model for Strained-Silicon Devices";
IEEE Transactions on Electron Devices, 53, (2006), 3054 - 3062 doi:10.1109/TED.2006.885639. BibTeX

39. V. Sverdlov, T. Grasser, H. Kosina, S. Selberherr:
"Scattering and Space-Charge Effects in Wigner Monte Carlo Simulations of Single and Double Barrier Devices";
Journal of Computational Electronics, 5, (2006), 447 - 450 doi:10.1007/s10825-006-0041-6. BibTeX

38. T. Ayalew, T. Grasser, H. Kosina, S. Selberherr:
"Modeling of Lattice Site-Dependent Incomplete Ionization in α-SiC Devices";
Materials Science Forum, 483-485, (2005), 845 - 848 doi:10.4028/www.scientific.net/MSF.483-485.845. BibTeX

37. T. Ayalew, S.-C. Kim, T. Grasser, S. Selberherr:
"Numerical Analysis of SiC Merged PiN Schottky Diodes";
Materials Science Forum, 483-485, (2005), 949 - 952 doi:10.4028/www.scientific.net/MSF.483-485.949. BibTeX

36. T. Grasser:
"Non-Parabolic Macroscopic Transport Models for Semiconductor Device Simulation";
Physica A: Statistical Mechanics and its Applications, 349, (2005), 221 - 258. BibTeX

35. T. Grasser, R. Kosik, C. Jungemann, H. Kosina, S. Selberherr:
"Nonparabolic Macroscopic Transport Models for Device Simulation Based on Bulk Monte Carlo Data";
Journal of Applied Physics, 97, (2005), 093710-1 - 093710-12 doi:10.1063/1.1883311. BibTeX

34. S. Holzer, Ch. Hollauer, H. Ceric, S. Wagner, E. Langer, T. Grasser, S. Selberherr:
"Transient Electro-Thermal Investigations of Interconnect Structures Exposed to Mechanical Stress";
Proceedings of SPIE, 5837, (2005), 380 - 387 doi:10.1117/12.608414. BibTeX

33. C. Jungemann, T. Grasser, B. Neinhüs, B. Meinerzhagen:
"Failure of Moments-Based Transport Models in Nanoscale Devices Near Equilibrium";
IEEE Transactions on Electron Devices, 52, (2005), 2404 - 2408. BibTeX

32. S.-C. Kim, W. Bahng, N.-K. Kim, E.-D. Kim, T. Ayalew, T. Grasser, S. Selberherr:
"Numerical Simulation and Optimization for 900V 4H-SiC DiMOSFET fabrication";
Materials Science Forum, 483-485, (2005), 793 - 796 doi:10.4028/www.scientific.net/MSF.483-485.793. BibTeX

31. S. Wagner, T. Grasser, C. Fischer, S. Selberherr:
"An Advanced Equation Assembly Module";
Engineering with Computers, 21, (2005), 151 - 163 doi:10.1007/s00366-005-0319-5. BibTeX

30. T. Ayalew, A. Gehring, T. Grasser, S. Selberherr:
"Enhancement of Breakdown Voltage for Ni-SiC Schottky Diodes Utilizing Field Plate Edge Termination";
Microelectronics Reliability, 44, (2004), 1473 - 1478 doi:10.1016/j.microrel.2004.07.042. BibTeX

29. T. Grasser, R. Kosik, C. Jungemann, B. Meinerzhagen, H. Kosina, S. Selberherr:
"A Non-Parabolic Six Moments Model for the Simulation of Sub-100 nm Semiconductor Devices";
Journal of Computational Electronics, 3, (2004), 183 - 187 doi:10.1007/s10825-004-7041-1. BibTeX

28. S. Holzer, R. Minixhofer, C. Heitzinger, J. Fellner, T. Grasser, S. Selberherr:
"Extraction of Material Parameters Based on Inverse Modeling of Three-Dimensional Interconnect Fusing Structures";
Microelectronics Journal, 35, (2004), 805 - 810 doi:10.1016/j.mejo.2004.06.011. BibTeX

27. V. Palankovski, G. Röhrer, T. Grasser, S. Smirnov, H. Kosina, S. Selberherr:
"Rigorous Modeling Approach to Numerical Simulation of SiGe HBTs";
Applied Surface Science, 224, (2004), 361 - 364 doi:10.1016/j.apsusc.2003.09.034. BibTeX

26. J.M. Park, S. Wagner, T. Grasser, S. Selberherr:
"New SOI Lateral Power Devices with Trench Oxide";
Solid-State Electronics, 48, (2004), 1007 - 1015 doi:10.1016/j.sse.2003.12.015. BibTeX

25. S. Wagner, V. Palankovski, G. Röhrer, T. Grasser, S. Selberherr:
"Direct Extraction Feature for Scattering Parameters of SiGe-HBTs";
Applied Surface Science, 224, (2004), 365 - 369 doi:10.1016/j.apsusc.2003.09.035. BibTeX

24. T. Ayalew, A. Gehring, J.M. Park, T. Grasser, S. Selberherr:
"Improving SiC Lateral DMOSFET Reliability under High Field Stress";
Microelectronics Reliability, 43, (2003), 1889 - 1894 doi:10.1016/S0026-2714(03)00321-4. BibTeX

23. A. Gehring, T. Grasser, H. Kosina, S. Selberherr:
"Energy Transport Gate Current Model Accounting for Non-Maxwellian Energy Distribution";
Electronics Letters, 39, (2003), 691 - 692 doi:10.1049/el:20030440. BibTeX

22. T. Grasser, H. Kosina, S. Selberherr:
"Hot Carrier Effects within Macroscopic Transport Models";
International Journal of High Speed Electronics and Systems, 13, (2003), 873 - 901 doi:10.1142/S012915640300206X. BibTeX

21. T. Grasser, T.-W. Tang, H. Kosina, S. Selberherr:
"A Review of Hydrodynamic and Energy-Transport Models for Semiconductor Device Simulation";
Proceedings of the IEEE, 91, (2003), 251 - 274 doi:10.1109/JPROC.2002.808150. BibTeX

20. J.M. Park, T. Grasser, H. Kosina, S. Selberherr:
"A Numerical Study of Partial-SOI LDMOSFETs";
Solid-State Electronics, 47, (2003), 275 - 281 doi:10.1016/S0038-1101(02)00207-1. BibTeX

19. A. Gehring, T. Grasser, B.-H. Cheong, S. Selberherr:
"Design Optimization of Multi-Barrier Tunneling Devices Using the Transfer-Matrix Method";
Solid-State Electronics, 46, (2002), 1545 - 1551 doi:10.1016/S0038-1101(02)00103-X. BibTeX

18. A. Gehring, T. Grasser, H. Kosina, S. Selberherr:
"Simulation of Hot-Electron Oxide Tunneling Current Based on a Non-Maxwellian Electron Energy Distribution Function";
Journal of Applied Physics, 92, (2002), 6019 - 6027 doi:10.1063/1.1516617. BibTeX

17. T. Grasser, H. Kosina, C. Heitzinger, S. Selberherr:
"Accurate Impact Ionization Model which Accounts for Hot and Cold Carrier Populations";
Applied Physics Letters, 80, (2002), 613 - 615 doi:10.1063/1.1445273. BibTeX

16. T. Grasser, H. Kosina, C. Heitzinger, S. Selberherr:
"Characterization of the Hot Electron Distribution Function Using Six Moments";
Journal of Applied Physics, 91, (2002), 3869 - 3879 doi:10.1063/1.1450257. BibTeX

15. T. Grasser, H. Kosina, S. Selberherr:
"Hydrodynamic and Energy-Transport Models for Semiconductor Device Simulation: Extensions and Critical Issues";
Wisnik, 444, (invited) (2002), 28 - 41. BibTeX

14. T. Grasser, H. Kosina, S. Selberherr:
"Hydrodynamic and Energy-Transport Models for Semiconductor Device Simulation: Review of Basic Models";
Wisnik, 444, (invited) (2002), 18 - 27. BibTeX

13. T. Grasser, S. Selberherr:
"Electro-Thermal Effects in Mixed-Mode Device Simulation";
Romanian Journal of Information Science and Technology, 5, (2002), 339 - 354. BibTeX

12. T. Grasser, S. Selberherr:
"Technology CAD: Device Simulation and Characterization";
Journal of Vacuum Science & Technology B, 20, (2002), 407 - 413 doi:10.1116/1.1445162. BibTeX

11. M. Gritsch, H. Kosina, T. Grasser, S. Selberherr:
"Revision of the Standard Hydrodynamic Transport Model for SOI Simulation";
IEEE Transactions on Electron Devices, 49, (2002), 1814 - 1820 doi:10.1109/TED.2002.803645. BibTeX

10. H. Kosina, M. Gritsch, T. Grasser, S. Selberherr, T. Linton, S. Yu, M. Giles:
"An Improved Energy Transport Model Suitable for Simulation of Partially Depleted SOI MOSFETs";
Journal of Computational Electronics, 1, (2002), 371 - 374 doi:10.1023/A:1020703709031. BibTeX

9. M. Nedjalkov, T. Grasser, H. Kosina, S. Selberherr:
"Transient Model for Terminal Current Noise";
Applied Physics Letters, 80, (2002), 607 - 609 doi:10.1063/1.1447002. BibTeX

8. F. Gamiz, J. Roldan, H. Kosina, T. Grasser:
"Improving Strained-Si on Si1-xGex Deep Submicron MOSFETs Performance by Means of a Stepped Doping Profile";
IEEE Transactions on Electron Devices, 48, (2001), 1878 - 1884. BibTeX

7. T. Grasser, H. Kosina, M. Gritsch, S. Selberherr:
"Using Six Moments of Boltzmann's Transport Equation for Device Simulation";
Journal of Applied Physics, 90, (2001), 2389 - 2396 doi:10.1063/1.1389757. BibTeX

6. T. Grasser, H. Kosina, S. Selberherr:
"Influence of the Distribution Function Shape and the Band Structure on Impact Ionization Modeling";
Journal of Applied Physics, 90, (2001), 6165 - 6171 doi:10.1063/1.1415366. BibTeX

5. T. Grasser, H. Kosina, S. Selberherr:
"Investigation of Spurious Velocity Overshoot Using Monte Carlo Data";
Applied Physics Letters, 79, (2001), 1900 - 1902 doi:10.1063/1.1405000. BibTeX

4. T. Grasser, S. Selberherr:
"Fully Coupled Electrothermal Mixed-Mode Device Simulation of SiGe HBT Circuits";
IEEE Transactions on Electron Devices, 48, (2001), 1421 - 1427 doi:10.1109/16.930661. BibTeX

3. M. Gritsch, H. Kosina, T. Grasser, S. Selberherr:
"Influence of Generation/Recombination Effects in Simulations of Partially Depleted SOI MOSFETs";
Solid-State Electronics, 45, (2001), 621 - 627 doi:10.1016/S0038-1101(01)00080-6. BibTeX

2. V. Palankovski, N. Belova, T. Grasser, H. Puchner, S. Aronowitz, S. Selberherr:
"A Methodology for Deep Sub-0.25µm CMOS Technology Prediction";
IEEE Transactions on Electron Devices, 48, (2001), 2331 - 2336 doi:10.1109/16.954473. BibTeX

1. T. Grasser, S. Selberherr:
"Mixed-Mode Device Simulation";
Microelectronics Journal, 31, (2000), 873 - 881 doi:10.1016/S0026-2692(00)00083-5. BibTeX


Contributions to Books


25. D. Waldhör, A.-M. El-Sayed, Y. Wimmer, M. Waltl, T. Grasser:
"Atomistic Modeling of Oxide Defects";
in "Noise in Nanoscale Semiconductor Devices", T. Grasser (ed); Springer International Publishing, 2020, ISBN: 978-3-030-37499-0, 609 - 648 doi:10.1007/978-3-030-37500-3_18. BibTeX

24. T. Knobloch, G. Rzepa, Yu. Illarionov, M. Waltl, D.K Polyushkin, A. Pospischil, M. M. Furchi, T. Müller, T. Grasser:
"Impact of Gate Dielectrics on the Threshold Voltage in MoS2 Transistors";
in "Semiconductors, Dielectrics, and Metals for Nanoelectronics 15, Vol.80, No.1", issued by The Electrochemical Society; D. Misra, S. De Gendt, M. Houssa, K. Kita, D. Landheer (ed); ECS Transactions, (invited) 2017, ISBN: 978-1-62332-470-4, 203 - 217 doi:10.1149/08001.0203ecst. BibTeX

23. T. Grasser, E. Langer, S. Selberherr:
"Institut für Mikroelektronik";
in "Die Fakultät für Elektrotechnik und Informationstechnik", K. Unterrainer (ed); Böhlau, 2015, ISBN: 978-3-205-20128-1, 57 - 62 doi:10.7767/9783205202240-006. BibTeX

22. B. Kaczer, T. Grasser, J. Franco, M. Toledano-Luque, Ph. J. Roussel, M. Cho, E. Simoen, G. Groeseneken:
"Recent Trends in Bias Temperature Instability";
in "Circuit Design for Reliability", R. Reis, Y. Cao, G. Wirth (ed); Springer New York, 2015, ISBN: 978-1-4614-4077-2, 5 - 19 doi:10.1007/978-1-4614-4078-9_2. BibTeX

21. W. Gös, F. Schanovsky, T. Grasser:
"Advanced Modeling of Oxide Defects";
in "Bias Temperature Instability for Devices and Circuits", T. Grasser (ed); Springer New York, 2013, ISBN: 978-1-4614-7909-3, 409 - 446 doi:10.1007/978-1-4614-7909-3_16. BibTeX

20. T. Grasser:
"The Capture/Emission Time Map Approach to the Bias Temperature Instability";
in "Bias Temperature Instability for Devices and Circuits", T. Grasser (ed); Springer New York, 2013, ISBN: 978-1-4614-7909-3, 447 - 481 doi:10.1007/978-1-4614-7909-3_17. BibTeX

19. F. Schanovsky, T. Grasser:
"On the Microscopic Limit of the RD Model";
in "Bias Temperature Instability for Devices and Circuits", T. Grasser (ed); Springer New York, 2013, ISBN: 978-1-4614-7909-3, 379 - 408 doi:10.1007/978-1-4614-7909-3_15. BibTeX

18. K. Rupp, A. Jüngel, T. Grasser:
"A GPU-Accelerated Parallel Preconditioner for the Solution of the Boltzmann Transport Equation for Semiconductors";
in "Facing the Multicore - Challenge II, Lecture Notes in Computer Science", 7174, R. Keller, D. Kramer, J.-Ph. Weiss (ed); Springer Berlin Heidelberg, 2012, ISBN: 978-3-642-30396-8, 147 - 157 doi:10.1007/978-3-642-30397-5. BibTeX

17. K. Rupp, A. Jüngel, T. Grasser:
"Deterministic Numerical Solution of the Boltzmann Transport Equation";
in "Progress in Industrial Mathematics at ECMI 2010, Mathematics in Industry", 17, R. Keller, D. Kramer, J.-Ph. Weiss (ed); Springer Berlin Heidelberg, 2012, ISBN: 978-3-642-25099-6, 53 - 59 doi:10.1007/978-3-642-25100-9_7. BibTeX

16. K. Rupp, P. Lagger, T. Grasser, A. Jüngel:
"Inclusion of Carrier-Carrier-Scattering Into Arbitrary-Order Spherical Harmonics Expansions of the Boltzmann Transport Equation";
in "The 15th International Workshop on Computational Electronics", IEEE Xplore, 2012, ISBN: 978-1-4673-0705-5, 1 - 4 doi:10.1109/IWCE.2012.6242856. BibTeX

15. S. E. Tyaginov, I. Starkov, H. Enichlmair, J.M. Park, C. Jungemann, T. Grasser:
"Physics-Based Hot-Carrier Degradation Models";
in "Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11", R. Sah (ed); ECS Transactions, 2011, ISBN: 978-1-56677-865-7, 321 - 352 doi:10.1149/1.3572292. BibTeX

14. W. Gös, F. Schanovsky, Ph. Hehenberger, P.-J. Wagner, T. Grasser:
"Charge Trapping and the Negative Bias Temperature Instability";
in "Physics and Technology of High-k Materials 8", ECS Transactions, (invited) 2010, ISBN: 978-1-56677-822-0, 565 - 589 doi:10.1149/1.3481647. BibTeX

13. K. Rupp, A. Jüngel, T. Grasser:
"Matrix Compression for Spherical Harmonics Expansions of the Boltzmann Transport Equation for Semiconductors";
in "ASC Report 10/2010", issued by Institute for Analysis and Scientific Computing; Vienna University of Technology, Wien, 2010, ISBN: 978-3-902627-03-2, 1 - 32. BibTeX

12. O. Triebl, T. Grasser:
"Numerical Power/HV Device Modeling";
in "Power/HV MOS Devices Compact Modeling", W. Grabinski, T. Gneiting (ed); Springer Netherlands, (invited) 2010, ISBN: 978-90-481-3045-0, 1 - 32 doi:10.1007/978-90-481-3046-7_1. BibTeX

11. M. Vasicek, D. Esseni, C. Fiegna, T. Grasser:
"Modeling and Simulation Approaches for Drain Current Computation";
in "Nanoscale CMOS: Innovative Materials, Modeling and Characterization", issued by F. Balestra; Wiley, London, (invited) 2010, ISBN: 978-1-84821-180-3, 259 - 285. BibTeX

10. M. Vasicek, V. Sverdlov, J. Cervenka, T. Grasser, H. Kosina, S. Selberherr:
"Transport in Nanostructures: A Comparative Analysis Using Monte Carlo Simulation, the Spherical Harmonic Method, and Higher Moments Models";
in "Large-Scale Scientific Computing, Lecture Notes in Computer Science", 5910, I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer Berlin Heidelberg, 2010, ISBN: 978-3-642-12534-8, 443 - 450 doi:10.1007/978-3-642-12535-5_52. BibTeX

9. T. Grasser, W. Gös, B. Kaczer:
"Critical Modeling Issues in Negative Bias Temperature Instability";
in "215th ECS Meeting", R. Ekwal Sah, J. Zhang, J. Deen, J. Yota, A. Toriumi (ed); ECS Transactions, (invited) 2009, 265 - 287 doi:10.1149/1.3122096. BibTeX

8. T. Grasser, W. Gös, B. Kaczer:
"Towards Engineering Modeling of Negative Bias Temperature Instability";
in "Defects in Microelectronic Materials and Devices", issued by D. Fleetwood, R. Schrimpf, S. Pantelides; Taylor and Francis/CRC Press, (invited) 2008, ISBN: 1420043765, 399 - 436. BibTeX

7. B. Kaczer, T. Grasser, R. Fernandez, G. Groeseneken:
"Toward Understanding the Wide Distribution of Time Scales in Negative Bias Temperature Instability";
in "Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 9", R. Sah, J. Zhang, Y. Kamakura, M. Deen, J. Yota (ed); ECS Transactions, Pennington, (invited) 2007, ISBN: 978-1-56677-552-6, 265 - 281 doi:10.1149/1.2728801. BibTeX

6. V. Sverdlov, H. Kosina, T. Grasser, S. Selberherr:
"Self-Consistent Wigner Monte Carlo Simulations of Current in Emerging Nanodevices: Role of Tunneling and Scattering";
in "28th International Conference on the Physics of Semiconductors", American Institute of Physics, 2007, ISBN: 978-0-7354-0397-0, 1395 - 1396 doi:10.1063/1.2730425. BibTeX

5. H. Ceric, R. Heinzl, Ch. Hollauer, T. Grasser, S. Selberherr:
"Microstructure and Stress Aspects of Electromigration Modeling";
in "Stress-Induced Phenomena in Metallization", American Institute of Physics, Melville, 2006, ISBN: 0-7354-03104, 262 - 268. BibTeX

4. M. Wagner, G. Span, S. Holzer, V. Palankovski, O. Triebl, T. Grasser:
"Power Output Improvement of Silicon-Germanium Thermoelectric Generators";
in "SiGe and Ge: Materials, Processing, and Devices, Vol. 3, No. 7", issued by The Electrochemical Society; ECS Transactions, 2006, ISBN: 1-56677-507-8, 1151 - 1162 doi:10.1149/1.2355909. BibTeX

3. T. Grasser:
"Closure Relations for Macroscopic Transport Models in Semiconductor Device Simulation";
in "Recent Research Developments in Applied Physics Vol. 7 - 2004 Part II", issued by S.G. Pandalai; Transworld Research Network, (invited) 2004, ISBN: 81-7895-156-8, 423 - 446. BibTeX

2. T. Grasser, H. Kosina, S. Selberherr:
"Hot Carrier Effects within Macroscopic Transport Models";
in "Advanced Device Modeling and Simulation", T. Grasser (ed); World Scientific Publishing Co., Singapore, 2003, ISBN: 9-812-38607-6, 173 - 201. BibTeX

1. T. Grasser, S. Selberherr:
"Current Transport Models for Engineering Applications";
in "Future Trends in Microelectronics", S. Luryi, J. Xu, A. Zaslavsky (ed); John Wiley & Sons, (invited) 2002, ISBN: 0-471-21247-4, 87 - 98. BibTeX


Talks and Poster Presentations (with Proceedings-Entry)


410. B. Ruch, M. Jech, G. Pobegen, T. Grasser:
"Applicability of Shockley-Read-Hall Theory for Interface States";
Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA - virtual; 2020-12-12 - 2020-12-18; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2020), 449 - 452. BibTeX

409. A. Vasilev, M. Jech, A. Grill, G. Rzepa, C. Schleich, A. Makarov, G. Pobegen, T. Grasser, M. Waltl, S. E. Tyaginov:
"Modeling the Hysteresis of Current-Voltage Characteristics in 4H-SiC Transistors";
Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA - virtual; 2020-10-04 - 2020-10-08; in "Proceedings of the International Integrated Reliability Workshop (IIRW)", (2020), 1 - 4 doi:10.1109/IIRW49815.2020.9312864. BibTeX

408. D. Milardovich, M. Jech, D. Waldhör, M. Waltl, T. Grasser:
"Machine Learning Prediction of Formation Energies in a-SiO2";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan - virtual; 2020-09-23 - 2020-10-06; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2020), 339 - 342 doi:10.23919/SISPAD49475.2020.9241609. BibTeX

407. Yu. Illarionov, T. Knobloch, M. Waltl, S. Majumdar, M. Soikkeli, W. Kim, S. Wachter, D.K Polyushkin, S. Arpiainen, M. Prunnila, A. Mueller, T. Grasser:
"Low Variability and 1010 On/Off Current Ratio in Flexible MoS2 FETs with Al2O3 Encapsulation Improved by Parylene N";
Talk: Electronic Materials Conference (EMC), Columbus, OH, USA - virtual; 2020-06-24 - 2020-06-26; in "Proceedings of the Electronic Materials Conference (EMC)", (2020), 25. BibTeX

406. T. Knobloch, Yu. Illarionov, B. Uzlu, M. Waltl, D. Neumaier, M. Lemme, T. Grasser:
"The Impact of the Graphene Work Function on the Stability of Flexible GFETs";
Talk: Electronic Materials Conference (EMC), Columbus, OH, USA - virtual; 2020-06-24 - 2020-06-26; in "Proceedings of the Electronic Materials Conference (EMC)", (2020), . BibTeX

405. Yu. Illarionov, A. Banshchikov, T. Knobloch, D.K Polyushkin, S. Wachter, V. V. Fedorov, S. M. Suturin, M. Stöger-Pollach, M. I. Vexler, N. S. Sokolov, T. Grasser:
"Crystalline Calcium Fluoride: A Record-Thin Insulator for Nanoscale 2D Electronics";
Talk: Device Research Conference (DRC), Columbus, OH, USA - virtual; 2020-06-21 - 2020-06-24; in "Proceedings of the Device Research Conference (DRC)", (2020), 1 - 2 doi:10.1109/DRC50226.2020.9135160. BibTeX

404. Yu. Illarionov, T. Knobloch, K. Smithe, M. Waltl, R. Grady, D. Waldhör, E. Pop, T. Grasser:
"Anomalous Instabilities in CVD-MoS2 FETs Suppressed by High-Quality Al2O3 Encapsulation";
Poster: Device Research Conference (DRC), Columbus, OH, USA - virtual; 2020-06-21 - 2020-06-24; in "Proceedings of the Device Research Conference (DRC)", (2020), 150 - 151. BibTeX

403. T. Knobloch, J. Michl, D. Waldhör, Yu. Illarionov, B. Stampfer, A. Grill, R. Zhou, P. Wu, M. Waltl, J. Appenzeller, T. Grasser:
"Analysis of Single Electron Traps in Nano-scaled MoS2 FETs at Cryogenic Temperatures";
Talk: Device Research Conference (DRC), Columbus, OH, USA - virtual; 2020-06-21 - 2020-06-24; in "Proceedings of the Device Research Conference (DRC)", (2020), 52 - 53. BibTeX

402. Yu. Illarionov, T. Knobloch, T. Grasser:
"Where Are the Best Insulators for 2D Field-Effect Transistors?";
Talk: Meeting of the Electrochemical Society (ECS), Montreal, Canada - virtual; (invited) 2020-05-10 - 2020-05-14; in "Abstracts of the Meeting of the Electrochemical Society (ECS)", (2020), MA2020-01/844, doi:10.1149/MA2020-0110844mtgabs. BibTeX

401. J. Berens, M. Weger, G. Pobegen, T. Aichinger, G. Rescher, C. Schleich, T. Grasser:
"Similarities and Differences of BTI in SiC and Si Power MOSFETs";
Talk: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 2020-04-28 - 2020-05-30; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), ISBN: 978-1-7281-3200-6, 1 - 6 doi:10.1109/IRPS45951.2020.9129259. BibTeX

400. T. Grasser, B. Kaczer, B. O´Sullivan, G. Rzepa, B. Stampfer, M. Waltl:
"The Mysterious Bipolar Bias Temperature Stress from the Perspective of Gate-Sided Hydrogen Release";
Talk: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 2020-04-28 - 2020-05-30; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), ISBN: 978-1-7281-3200-6, 1 - 6 doi:10.1109/IRPS45951.2020.9129198. BibTeX

399. A. Grill, E. Bury, J. Michl, S. Tyaginov, D. Linten, T. Grasser, B. Parvais, B. Kaczer, M. Waltl, I. Radu:
"Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures";
Talk: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 2020-04-28 - 2020-05-30; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), ISBN: 978-1-7281-3199-3, 1 - 6 doi:10.1109/IRPS45951.2020.9128316. BibTeX

398. A. Kruv, B. Kaczer, A. Grill, M. Gonzalez, J. Franco, D. Linten, W. Goes, T. Grasser, I. De Wolf:
"On the Impact of Mechanical Stress on Gate Oxide Trapping";
Talk: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 2020-04-28 - 2020-05-30; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), 1 - 5 doi:10.1109/IRPS45951.2020.9129541. BibTeX

397. J. Michl, A. Grill, D. Claes, G. Rzepa, B. Kaczer, D. Linten, I. Radu, T. Grasser, M. Waltl:
"Quantum Mechanical Charge Trap Modeling to Explain BTI at Cryogenic Temperatures";
Talk: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 2020-04-28 - 2020-05-30; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), ISBN: 978-1-7281-3199-3, 1 - 6 doi:10.1109/IRPS45951.2020.9128349. BibTeX

396. B. Ruch, G. Pobegen, C. Schleich, T. Grasser:
"Generation of Hot-Carrier Induced Border and Interface Traps, Investigated by Spectroscopic Charge Pumping";
Talk: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 2020-04-28 - 2020-05-30; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), ISBN: 978-1-7281-3200-6, 1 - 6 doi:10.1109/IRPS45951.2020.9129513. BibTeX

395. S. Tyaginov, A. Grill, M. Vandemaele, T. Grasser, G. Hellings, A. Makarov, M. Jech, D. Linten, B. Kaczer:
"A Compact Physics Analytical Model for Hot-Carrier Degradation";
Talk: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 2020-04-28 - 2020-05-30; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), ISBN: 978-1-7281-3199-3, 1 - 7 doi:10.1109/IRPS45951.2020.9128327. BibTeX

394. M. Jech, S. Tyaginov, B. Kaczer, J. Franco, D. Jabs, C. Jungemann, M. Waltl, T. Grasser:
"First-Principles Parameter-Free Modeling of n- and p-FET Hot-Carrier Degradation";
Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco , USA; 2019-12-07 - 2019-12-11; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2019), doi:10.1109/IEDM19573.2019.8993630. BibTeX

393. C. Schleich, J. Berens, G. Rzepa, G. Pobegen, G. Rescher, S. E. Tyaginov, T. Grasser, M. Waltl:
"Physical Modeling of Bias Temperature Instabilities in SiC MOSFETs";
Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, USA; 2019-12-07 - 2019-12-11; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2019), doi:10.1109/IEDM19573.2019.8993446. BibTeX

392. B. Stampfer, M. Simicic, P. Weckx, A. Abbasi, B. Kaczer, T. Grasser, M. Waltl:
"Statistical Characterization of BTI and RTN using Integrated pMOS Arrays";
Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2019-10-13 - 2019-10-17; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2019), 1 - 5 doi:10.1109/IIRW47491.2019.8989904. BibTeX

391. D. Waldhör, Y. Wimmer, A.-M. El-Sayed, W. Goes, M. Waltl, T. Grasser:
"Minimum Energy Paths for Non-Adiabatic Charge Transitions in Oxide Defects";
Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2019-10-13 - 2019-10-17; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2019), 1 - 5 doi:10.1109/IIRW47491.2019.8989889. BibTeX

390. A. Makarov, B. Kaczer, Ph. Roussel, A. Chasin, M. Vandemaele, G. Hellings, A.-M. El-Sayed, M. Jech, T. Grasser, D. Linten, S. E. Tyaginov:
"Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants";
Talk: European Solid-State Device Research Conference (ESSDERC), Krakow, Poland; 2019-09-23 - 2019-09-26; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2019), ISBN: 978-1-7281-1539-9, 262 - 265 doi:10.1109/ESSDERC.2019.8901721. BibTeX

389. A. Makarov, B. Kaczer, Ph. Roussel, A. Chasin, M. Vandemaele, G. Hellings, A.-M. El-Sayed, M. Jech, T. Grasser, D. Linten, S. E. Tyaginov:
"Simulation Study: the Effect of Random Dopants and Random Traps on Hot-Carrier Degradation in nFinFETs";
Talk: International Conference on Solid State Devices and Materials (SSDM), Nagoya, Japan; 2019-09-02 - 2019-09-05; in "Extended Abstracts of the International Conference on Solid State Devices and Materials (SSDM)", (2019), 609 - 610. BibTeX

388. Yu. Illarionov, T. Grasser:
"Reliability of 2D Field-Effect Transistors: from First Prototypes to Scalable Devices";
Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Hangzhou, China; (invited) 2019-07-02 - 2019-07-05; in "Proceedings of the International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)", (2019), 1 - 6 doi:10.1109/IPFA47161.2019.8984799. BibTeX

387. Yu. Illarionov, A. Banshchikov, M. Vexler, D.K Polyushkin, S. Wachter, M. Thesberg, N. S. Sokolov, T. Mueller, T. Grasser:
"Epitaxial CaF2: a Route towards Scalable 2D Electronics";
Poster: International Conference on Physics of 2D Crystals (ICP2DC4), Hangzhou, China; 2019-06-10 - 2019-06-15; in "Proceedings of the International Conference on Physics of 2D Crystals (ICP2DC4)", (2019), 69. BibTeX

386. A. Makarov, B. Kaczer, Ph. Roussel, A. Chasin, A. Grill, M. Vandemaele, G. Hellings, A.-M. El-Sayed, T. Grasser, D. Linten, S. E. Tyaginov:
"Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs";
Talk: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2019-03-31 - 2019-04-04; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2019), ISBN: 978-1-5386-9504-3, doi:10.1109/IRPS.2019.8720584. BibTeX

385. B. O´Sullivan, R. Ritzenthaler, G. Rzepa, Z. Wu, E. D. Litta, O. Richard, T. Conard, V. Machkaoutsan, P. Fazan, C. Kim, J. Franco, B. Kaczer, T. Grasser, A. Spessot, D. Linten, N. Horiguchi:
"Gate-Stack Engineered NBTI Improvements in Highvoltage Logic-For-Memory High-κ/Metal Gate Devices";
Talk: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2019-03-31 - 2019-04-04; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2019), ISBN: 978-1-5386-9504-3, 1 - 8 doi:10.1109/IRPS.2019.8720598. BibTeX

384. Z. Wu, J. Franco, D. Claes, G. Rzepa, P. Roussel, N. Collaert, G Groeseneken, D. Linten, T. Grasser, B. Kaczer:
"Accelerated Capture and Emission (ACE) Measurement Pattern for Efficient BTI Characterization and Modeling";
Talk: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2019-03-31 - 2019-04-04; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2019), ISBN: 978-1-5386-9504-3, 1 - 7 doi:10.1109/IRPS.2019.8720541. BibTeX

383. J. Franco, Z. Wu, G. Rzepa, A. Vandooren, H. Arimura, D. Claes, N. Horiguchi, N. Collaert, D. Linten, T. Grasser, B. Kaczer:
"Low Thermal Budget Dual-Dipole Gate Stacks Engineered for Sufficient BTI Reliability in Novel Integration Schemes";
Talk: IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Singapore; (invited) 2019-03-12 - 2019-03-15; in "Proceedings of the IEEE Electron Devices Technology and Manufacturing Conference (EDTM)", (2019), ISBN: 978-1-5386-6508-4, 215 - 217 doi:10.1109/EDTM.2019.8731237. BibTeX

382. J. Franco, Z. Wu, G. Rzepa, A. Vandooren, H. Arimura, L. Ragnarsson, G. Hellings, S. Brus, D. Cott, V. De Heyn, G. Groeseneken, N. Horiguchi, J. Ryckaert, N. Collaert, D. Linten, T. Grasser, B. Kaczer:
"BTI Reliability Improvement Strategies in Low Thermal Budget Gate Stacks for 3D Sequential Integration";
Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, USA; 2018-12-01 - 2018-12-05; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2018), ISBN: 978-1-7281-1987-8, 34.2.1 - 34.2.4 doi:10.1109/IEDM.2018.8614559. BibTeX

381. J. Franco, Z. Wu, G. Rzepa, L. Ragnarsson, H. Dekkers, A. Vandooren, G. Groeseneken, N. Horiguchi, N. Collaert, D. Linten, T. Grasser, B. Kaczer:
"On the Impact of the Gate Metal Work-Function on the Charge Trapping Component of BTI";
Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, USA; 2018-10-07 - 2018-10-11; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2018), ISBN: 978-1-5386-6039-3, 1 - 4 doi:10.1109/IIRW.2018.8727089. BibTeX

380. S. E. Tyaginov, M. Jech, G. Rzepa, A. Grill, A.-M. El-Sayed, G. Pobegen, A. Makarov, T. Grasser:
"Border Trap Based Modeling of SiC Transistor Transfer Characteristics";
Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2018-10-07 - 2018-10-11; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2018), ISBN: 978-1-5386-6039-3, doi:10.1109/IIRW.2018.8727083. BibTeX

379. K. Puschkarsky, H. Reisinger, C. Schlünder, W. Gustin, T. Grasser:
"Fast Acquisition of Activation Energy Maps Using Temperature Ramps for Lifetime Modeling of BTI";
Talk: European Solid-State Device Research Conference (ESSDERC), Dresden, Germany; 2018-09-03 - 2018-09-06; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2018), 218 - 221. BibTeX

378. Yu. Illarionov, K. Smithe, M. Waltl, R. Grady, R.G. Deshmukh, E. Pop, T. Grasser:
"Annealing and Encapsulation of CVD-MoS2 FETs with 1010 On/Off Current Ratio";
Poster: Device Research Conference (DRC), Santa-Barbara, CA, USA; 2018-06-24 - 2018-06-27; in "Proceedings of the Device Research Conference (DRC)", (2018), ISBN: 978-1-5386-3028-0, doi:10.1109/DRC.2018.8442242. BibTeX

377. T. Grasser, B. Stampfer, M. Waltl, G. Rzepa, K. Rupp, F. Schanovsky, G. Pobegen, K. Puschkarsky, H. Reisinger, B. O´Sullivan, B. Kaczer:
"Characterization and Physical Modeling of the Temporal Evolution of Near-Interfacial States Resulting from NBTI/PBTI Stress in nMOS/pMOS Transistors";
Talk: IEEE International Reliability Physics Symposium (IRPS), Burlingame, CA, USA; 2018-03-11 - 2018-03-15; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2018), 2A.2-1 - 2A.2-10. BibTeX

376. Yu. Illarionov, A.J. Molina- Mendoza, M. Waltl, T. Knobloch, M. M. Furchi, T. Mueller, T. Grasser:
"Reliability of next-generation field-effect transistors with transition metal dichalcogenides";
Talk: IEEE International Reliability Physics Symposium (IRPS), Burlingame, CA, USA; 2018-03-11 - 2018-03-15; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2018), ISBN: 978-1-5386-5479-8, 6 page(s) doi:10.1109/IRPS.2018.8353605. BibTeX

375. K. Puschkarsky, T. Grasser, T. Aichinger, W. Gustin, H. Reisinger:
"Understanding and Modeling Transient Threshold Voltage Instabilities in SiC MOSFETs";
Talk: IEEE International Reliability Physics Symposium (IRPS), Burlingame, CA, USA; (invited) 2018-03-11 - 2018-03-15; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2018), 3B.5-1 - 3B.5-10. BibTeX

374. J. Franco, V. Putcha, A. Vais, S. Sioncke, N. Waldron, D. Zhou, G. Rzepa, P. Roussel, G. Groeseneken, M. Heyns, N. Collaert, D. Linten, T. Grasser, B. Kaczer:
"Characterization of Oxide Defects in InGaAs MOS Gate Stacks for High-Mobility n-Channel MOSFETs";
Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; (invited) 2017-12-02 - 2017-12-06; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2017), 4 page(s) . BibTeX

373. A. Makarov, S. E. Tyaginov, B. Kaczer, M. Jech, A. Chasin, A. Grill, G. Hellings, M. Vexler, D. Linten, T. Grasser:
"Hot-Carrier Degradation in FinFETs: Modeling, Peculiarities, and Impact of Device Topology";
Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 2017-12-02 - 2017-12-06; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2017), ISBN: 978-1-5386-3559-9, 310 - 313 doi:10.1109/IEDM.2017.8268381. BibTeX

372. K. Puschkarsky, H. Reisinger, T. Aichinger, W. Gustin, T. Grasser:
"Threshold Voltage Hysteresis in SiC MOSFETs and Its Impact on Circuit Operation";
Talk: IEEE International Integrated Reliability Workshop (IIRW), Fallen Leaf Lake, CA, USA; 2017-10-08 - 2017-10-12; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2017), 1 - 5. BibTeX

371. T. Knobloch, G. Rzepa, Yu. Illarionov, M. Waltl, D.K Polyushkin, A. Pospischil, M. M. Furchi, T. Müller, T. Grasser:
"Impact of Gate Dielectrics on the Threshold Voltage in MoS2 Transistors";
Talk: Meeting of the Electrochemical Society (ECS), National Harbor, Maryland, USA; (invited) 2017-10-01 - 2017-10-05; in "Meeting Abstracts", (2017), MA2017-02(14): 837, 2 page(s) . BibTeX

370. Yu. Illarionov, M. Waltl, K. Smithe, E. Pop, T. Grasser:
"Encapsulated MoS2 FETs with Improved Performance and Reliability";
Talk: GRAPCHINA, Nanjing, China; 2017-09-24 - 2017-09-26; in "Proceedings of the GRAPCHINA 2017", (2017), 1 page(s) . BibTeX

369. T. Knobloch, G. Rzepa, Yu. Illarionov, M. Waltl, F. Schanovsky, M. Jech, B. Stampfer, M. M. Furchi, T. Müller, T. Grasser:
"Physical Modeling of the Hysteresis in MoS2 Transistors";
Talk: European Solid-State Device Research Conference (ESSDERC), Leuven, Belgium; 2017-09-11 - 2017-09-14; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2017), 284 - 287 doi:10.1109/ESSDERC.2017.8066647. BibTeX

368. B. Ullmann, M. Jech, S. E. Tyaginov, M. Waltl, Yu. Illarionov, A. Grill, K. Puschkarsky, H. Reisinger, T. Grasser:
"The Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on Single Oxide Defects";
Poster: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2017-04-04 - 2017-04-06; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6642-1, XT-10.1 - XT-10.6 doi:10.1109/IRPS.2017.7936424. BibTeX

367. T. Grasser, M. Waltl, K. Puschkarsky, B. Stampfer, G. Rzepa, G. Pobegen, H. Reisinger, H. Arimura, B. Kaczer:
"Implications of Gate-Sided Hydrogen Release for Post-Stress Degradation Build-Up after BTI Stress";
Talk: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2017-04-02 - 2017-04-06; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6641-4, 6A-2.1 - 6A-2.6. BibTeX

366. A. Grill, B. Stampfer, M. Waltl, K.-S. Im, J. Lee, C. Ostermaier, H. Ceric, T. Grasser:
"Characterization and Modeling of Single Defects in GaN/AlGaN Fin-MIS-HEMTs";
Talk: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2017-04-02 - 2017-04-06; in "Proceedings of IEEE International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6641-4, 3B-5.1 - 3B-5.5 doi:10.1109/IRPS.2017.7936285. BibTeX

365. Yu. Illarionov, M. Waltl, M. Jech, J. Kim, D. Akinwande, T. Grasser:
"Reliability of Black Phosphorus Field-Effect Transistors with Respect to Bias-Temperature and Hot-Carrier Stress";
Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2017-04-02 - 2017-04-06; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6642-1, 6A-6.1 - 6A-6.6 doi:10.1109/IRPS.2017.7936338. BibTeX

364. B. Kaczer, G. Rzepa, J. Franco, P. Weckx, A. Chasin, V. Putcha, E. Bury, M. Simicic, Ph. J. Roussel, G. Hellings, A. Veloso, P. Matagne, T. Grasser, D. Linten:
"Benchmarking Time-Dependent Variability of Junctionless Nanowire FETs";
Talk: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2017-04-02 - 2017-04-06; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6641-4, 2D-6.1 - 2D-6.7. BibTeX

363. G. Rzepa, J. Franco, A. Subirats, M. Jech, A. Chasin, A. Grill, M. Waltl, T. Knobloch, B. Stampfer, T. Chiarella, N. Horiguchi, L. Ragnarsson, D. Linten, B. Kaczer, T. Grasser:
"Efficient Physical Defect Model Applied to PBTI in High-κ Stacks";
Poster: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2017-04-02 - 2017-04-06; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6641-4, XT-11.1 - XT-11.6. BibTeX

362. Yu. Illarionov, G. Rzepa, M. Waltl, T. Knobloch, J. Kim, D. Akinwande, T. Grasser:
"Accurate Mapping of Oxide Traps in Highly-Stable Black Phosphorus FETs";
Talk: IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Toyama, Japan; 2017-02-28 - 2017-03-02; in "Proceedings of the IEEE Electron Devices Technology and Manufacturing Conference (EDTM)", (2017), ISBN: 978-1-5090-4661-4, 114 - 115 doi:10.1109/EDTM.2017.7947532. BibTeX

361. M. Karner, O. Baumgartner, Z. Stanojevic, F. Schanovsky, G. Strof, Ch. Kernstock, H. W. Karner, G. Rzepa, T. Grasser:
"Vertically Stacked Nanowire MOSFETs for Sub-10nm Nodes: Advanced Topography, Device, Variability, and Reliability Simulations";
Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 2016-12-03 - 2016-12-07; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2016), ISBN: 978-1-5090-3902-9, 30.7.1 - 30.7.4. BibTeX

360. G. Rescher, G. Pobegen, T. Aichinger, T. Grasser:
"On the Subthreshold Drain Current Sweep Hysteresis of 4H-SiC nMOSFETs";
Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 2016-12-03 - 2016-12-07; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2016), ISBN: 978-1-5090-3902-9, 10.8.1 - 10.8.4. BibTeX

359. B. Kaczer, S. Amoroso, R. Hussin, A. Asenov, J. Franco, P. Weckx, Ph. J. Roussel, G. Rzepa, T. Grasser, N. Horiguchi:
"On the distribution of the FET threshold voltage shifts due to individual charged gate oxide defects";
Talk: IEEE International Integrated Reliability Workshop (IIRW), Stanford Sierra Conference Center, S. Lake Tahoe, California, USA; 2016-10-09 - 2016-10-13; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2016), ISBN: 978-1-5090-4192-3, 3 page(s) . BibTeX

358. S. E. Tyaginov, A. Makarov, M. Jech, J. Franco, P. Sharma, B. Kaczer, T. Grasser:
"On the Effect of Interface Traps on the Carrier Distribution Function During Hot-Carrier Degradation";
Poster: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2016-10-09 - 2016-10-13; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2016), ISBN: 978-1-5090-4193-0, 95 - 98 doi:10.1109/IIRW.2016.7904911. BibTeX

357. P. Sharma, S. E. Tyaginov, S. E. Rauch, J. Franco, B. Kaczer, A. Makarov, M. Vexler, T. Grasser:
"A Drift-Diffusion-Based Analytic Description of the Energy Distribution Function for Hot-Carrier Degradation in Decananometer nMOSFETs";
Talk: European Solid-State Device Research Conference (ESSDERC), Lausanne, Switzerland; 2016-09-12 - 2016-09-15; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2016), ISBN: 978-1-5090-2969-3, 428 - 431 doi:10.1109/ESSDERC.2016.7599677. BibTeX

356. Yu. Illarionov, G. Rzepa, M. Waltl, H. Pandey, S. Kataria, V. Passi, M. Lemme, T. Grasser:
"A Systematic Study of Charge Trapping in Single-Layer Double-Gated GFETs";
Talk: Device Research Conference, Newark, Delaware, USA; 2016-06-19 - 2016-06-22; in "74th Device Research Conference Digest", (2016), ISBN: 978-1-5090-2827-6, 89 - 90. BibTeX

355. G. Rzepa, M. Waltl, W. Gös, B. Kaczer, J. Franco, T. Chiarella, N. Horiguchi, T. Grasser:
"Complete Extraction of Defect Bands Responsible for Instabilities in n and pFinFETs";
Talk: International Symposium on VLSI Technology, Honolulu, HI, USA; 2016-06-14 - 2016-06-16; in "2016 Symposium on VLSI Technology Digest of Technical Papers", (2016), ISBN: 978-1-5090-0638-0, 208 - 209. BibTeX

354. Yu. Illarionov, M. Waltl, J. Kim, D. Akinwande, T. Grasser:
"Temperature-dependent Hysteresis in Black Phosphorus FETs";
Poster: Graphene Week, Warsaw, Poland; 2016-06-13 - 2016-06-17; in "Proceedings of the 2016 Graphene Week", (2016), . BibTeX

353. K. Rupp, A. Morhammer, T. Grasser, A. Jüngel:
"Parallel Deterministic Solution of the Boltzmann Transport Equation for Semiconductors";
Talk: International Workshop on Finite Elements for Microwave Engineering, Florence, Italy; 2016-05-16 - 2016-05-18; in "Proceedings of the 13th Workshop on Finite Elements for Microwave Engineering", (2016), ISBN: 978-88-6655-967-2, 104. BibTeX

352. K. Giering, G.A. Rott, G. Rzepa, H. Reisinger, A. Puppala, T. Reich, W. Gustin, T. Grasser, R. Jancke:
"Analog-circuit NBTI Degradation and Time-dependent NBTI Variability: An Efficient Physics-Based Compact Model";
Talk: International Reliability Physics Symposium (IRPS), Pasadena, CA, USA; 2016-04-17 - 2016-04-21; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2016), 4C-4-1 - 4C-4-6 doi:10.1109/IRPS.2016.7574540. BibTeX

351. T. Grasser, M. Waltl, G. Rzepa, W. Gös, Y. Wimmer, A.-M. El-Sayed, A. Shluger, H. Reisinger, B. Kaczer:
"The "Permanent" Component of NBTI Revisited: Saturation, Degradation-Reversal, and Annealing";
Talk: International Reliability Physics Symposium (IRPS), Pasadena, CA, USA; 2016-04-17 - 2016-04-21; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2016), 5A-2-1 - 5A-2-8 doi:10.1109/IRPS.2016.7574504. BibTeX

350. Yu. Illarionov, M. Waltl, M. M. Furchi, T. Müller, T. Grasser:
"Reliability of Single-Layer MoS2 Field-Effect Transistors with SiO2 and hBN Gate Insulators";
Talk: IEEE International Reliability Physics Symposium (IRPS), Pasadena, CA, USA; 2016-04-17 - 2016-04-21; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2016), 5A-1-1 - 5A-1-6 doi:10.1109/IRPS.2016.7574543. BibTeX

349. M. Waltl, A. Grill, G. Rzepa, W. Gös, J. Franco, B. Kaczer, J. Mitard, T. Grasser:
"Nanoscale Evidence for the Superior Reliability of SiGe High-k pMOSFETs";
Poster: International Reliability Physics Symposium (IRPS), Pasadena, CA, USA; 2016-04-17 - 2016-04-21; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2016), XT-02-1 - XT-02-6 doi:10.1109/IRPS.2016.7574644. BibTeX

348. T. Grasser, M. Waltl, Y. Wimmer, W. Gös, R. Kosik, G. Rzepa, H. Reisinger, G. Pobegen, A.-M. El-Sayed, A. Shluger, B. Kaczer:
"Gate-Sided Hydrogen Release as the Origin of "Permanent" NBTI Degradation: From Single Defects to Lifetimes";
Talk: IEEE International Electron Devices Meeting (IEDM), Washington, DC, USA; 2015-12-07 - 2015-12-09; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2015), 535 - 538. BibTeX

347. A. Grill, G. Rzepa, P. Lagger, C. Ostermaier, H. Ceric, T. Grasser:
"Charge Feedback Mechanisms at Forward Threshold Voltage Stress in GaN/AlGaN HEMTs";
Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2015-10-11 - 2015-10-15; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2015), ISBN: 978-1-4673-7395-1, 41 - 45 doi:10.1109/IIRW.2015.7437064. BibTeX

346. S. E. Tyaginov, M. Jech, P. Sharma, J. Franco, B. Kaczer, T. Grasser:
"On the Temperature Behavior of Hot-Carrier Degradation";
Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2015-10-11 - 2015-10-15; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2015), 143 - 146 doi:10.1109/IIRW.2015.7437088. BibTeX

345. P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, K. Rupp, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser:
"Comparison of Analytic Distribution Function Models for Hot-Carrier Degradation in nLDMOSFETs";
Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Toulouse, France; 2015-10-05 - 2015-10-09; in "Abstracts of the 26th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis", (2015), 60. BibTeX

344. Yu. Illarionov, M. Vexler, V. V. Fedorov, S. M. Suturin, N. S. Sokolov, T. Grasser:
"Characterization of Epitaxial Calcium Fluoride as a Dielectric Material for Ultra-Thin Barrier Layers in Silicon Microelectronics";
Poster: International Conference on Solid State Devices and Materials (SSDM), Sapporo, Japan; 2015-09-27 - 2015-09-30; in "Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials (SSDM 2015)", (2015), ISBN: 978-4-86348-514-3, 330 - 331. BibTeX

343. Yu. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, M. Lemme, T. Grasser:
"Back Gate Bias-Temperature Instability in Single-Layer Double-Gated Graphene Field-Effect Transistors";
Talk: International Conference on Solid State Devices and Materials (SSDM), Sapporo, Japan; 2015-09-27 - 2015-09-30; in "Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials (SSDM 2015)", (2015), ISBN: 978-4-86348-514-3, 650 - 651. BibTeX

342. L. Gerrer, R. Hussin, S. Amoroso, J. Franco, P. Weckx, N. Simicic, N. Horiguchi, B. Kaczer, T. Grasser, A. Asenov:
"Experimental Evidences and Simulations of Trap Generation along a Percolation Path";
Talk: European Solid-State Device Research Conference (ESSDERC), Graz; 2015-09-14 - 2015-09-18; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2015), ISBN: 978-1-4673-7133-9, 226 - 229 doi:10.1109/ESSDERC.2015.7324755. BibTeX

341. Yu. Illarionov, M. Waltl, S. Smith, S. Vaziri, M. Ostling, M. Lemme, T. Grasser:
"Interplay between Hot Carrier and Bias Stress Components in Single-Layer Double-Gated Graphene Field-Effect Transistors";
Talk: European Solid-State Device Research Conference (ESSDERC), Graz, Austria; 2015-09-14 - 2015-09-18; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2015), ISBN: 978-1-4673-7133-9, 172 - 175 doi:10.1109/ESSDERC.2015.7324741. BibTeX

340. B. Kaczer, J. Franco, P. Weckx, P. Roussel, E. Bury, M. Cho, R. Degraeve, D. Linten, G. Groeseneken, H. Kukner, P. Raghavan, F. Catthoor, G. Rzepa, W. Gös, T. Grasser:
"The Defect-Centric Perspective of Device and Circuit Reliability - From Individual Defects to Circuits";
Talk: European Solid-State Device Research Conference (ESSDERC), Graz, Austria; (invited) 2015-09-14 - 2015-09-18; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2015), ISBN: 978-1-4673-7860-4, 218 - 225 doi:10.1109/ESSDERC.2015.7324754. BibTeX

339. R. Stradiotto, G. Pobegen, C. Ostermaier, T. Grasser:
"On The Fly Characterization of Charge Trapping Phenomena at GaN/Dielectric and GaN/AlGaN/Dielectric Interfaces Using Impedance Measurements";
Talk: European Solid-State Device Research Conference (ESSDERC), Graz; 2015-09-14 - 2015-09-18; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2015), ISBN: 978-1-4673-7860-4, 218 - 225 doi:10.1109/ESSDERC.2015.7324754. BibTeX

338. H. Demel, Z. Stanojevic, M. Karner, G. Rzepa, T. Grasser:
"Expanding TCAD Simulations from Grid to Cloud";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 2015-09-09 - 2015-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7860-4, 186 - 189 doi:10.1109/SISPAD.2015.7292290. BibTeX

337. G. Rzepa, M. Waltl, W. Gös, B. Kaczer, T. Grasser:
"Microscopic Oxide Defects Causing BTI, RTN, and SILC on High-K FinFETs";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 2015-09-09 - 2015-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7860-4, 144 - 147 doi:10.1109/SISPAD.2015.7292279. BibTeX

336. P. Sharma, M. Jech, S. E. Tyaginov, F. Rudolf, K. Rupp, H. Enichlmair, J.M. Park, T. Grasser:
"Modeling of Hot-Carrier Degradation in LDMOS Devices Using a Drift-Diffusion Based Approach";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 2015-09-09 - 2015-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7858-1, 60 - 63 doi:10.1109/SISPAD.2015.7292258. BibTeX

335. Y. Wimmer, W. Gös, A.-M. El-Sayed, A. Shluger, T. Grasser:
"A Density-Functional Study of Defect Volatility in Amorphous Silicon Dioxide";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 2015-09-09 - 2015-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7860-4, 44 - 47 doi:10.1109/SISPAD.2015.7292254. BibTeX

334. Y. Wimmer, W. Gös, A.-M. El-Sayed, A. Shluger, T. Grasser:
"On the Validity of the Harmonic Potential Energy Surface Approximation for Nonradiative Multiphonon Charge Transitions in Oxide Defects";
Talk: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 2015-09-02 - 2015-09-04; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2015), ISBN: 978-0-692-50554-0, 97 - 98. BibTeX

333. B. Ullmann, M. Waltl, T. Grasser:
"Characterization of the Permanent Component of MOSFET Degradation Mechanisms";
Talk: Vienna Young Scientists Symposium - VSS 2015, Vienna University of Technology; 2015-06-25 - 2015-06-26; in "Proceedings of the 2015 Vienna Young Scient Symposium", (2015), ISBN: 978-3-9504017-0-7, 36 - 37. BibTeX

332. G. Rzepa, W. Gös, B. Kaczer, T. Grasser:
"Characterization and Modeling of Reliability Issues in Nanoscale Devices";
Talk: IEEE International Symposium on Circuits and Systems (ISCAS), Lisbon, Portugal; (invited) 2015-05-24 - 2015-05-27; in "Proceedings of the IEEE International Symposium on Circuits and Systems (ISCAS) 2015", (2015), ISBN: 978-1-4799-8391-9, 2445 - 2448. BibTeX

331. P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, K. Rupp, M. Bina, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser:
"Predictive and Efficient Modeling of Hot-Carrier Degradation in nLDMOS Devices";
Talk: IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), Hong Kong, China; 2015-05-10 - 2015-05-14; in "Proceedings of the IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)", (2015), ISBN: 978-1-4799-6259-4, 389 - 392 doi:10.1109/ISPSD.2015.7123471. BibTeX

330. J. Franco, B. Kaczer, P. Roussel, E. Bury, H. Mertens, R. Ritzenthaler, T. Grasser, N. Horiguchi, A. Thean, G Groeseneken:
"NBTI in Si 0.55 Ge 0.45 Cladding p-FinFETs: Porting the Superior Reliability from Planar to 3D Architectures";
Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2015-04-19 - 2015-04-23; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2015), 2F.4.1 - 2F.4.5 doi:10.1109/IRPS.2015.7112694. BibTeX

329. T. Grasser, M. Waltl, W. Gös, Y. Wimmer, A. El-Sayed, A. Shluger, B. Kaczer:
"On the Volatility of Oxide Defects: Activation, Deactivation, and Transformation";
Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2015-04-19 - 2015-04-23; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2015), 5A.3.1 - 5A.3.8 doi:10.1109/IRPS.2015.7112739. BibTeX

328. Yu. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, T. Müller, M. Lemme, T. Grasser:
"Hot-Carrier Degradation in Single-Layer Double-Gated Graphene Field-Effect Transistors";
Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2015-04-19 - 2015-04-23; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2015), XT.2.1 - XT.2.6 doi:10.1109/IRPS.2015.7112834. BibTeX

327. B. Kaczer, J. Franco, M. Cho, T. Grasser, P. Roussel, S. E. Tyaginov, M. Bina, Y. Wimmer, L. M. Procel, L. Trojman, F. Crupi, G. Pitner, V. Putcha, P. Weckx, E. Bury, Z. Ji, A. De Keersgieter, T. Chiarella, N. Horiguchi, G Groeseneken, A. Thean:
"Origins and Implications of Increased Channel Hot Carrier Variability in nFinFETs";
Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2015-04-19 - 2015-04-23; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2015), 6 page(s) doi:10.1109/IRPS.2015.7112706. BibTeX

326. M. Rovitto, W. H. Zisser, H. Ceric, T. Grasser:
"Electromigration Modelling of Void Nucleation in Open Cu-TSVs";
Poster: International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), Budapest, Hungary; 2015-04-19 - 2015-04-22; in "Proceedings of the International Conference on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)", (2015), ISBN: 978-1-4799-9949-1, 5 page(s) doi:10.1109/EuroSimE.2015.7103100. BibTeX

325. Yu. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, M. Lemme, T. Grasser:
"Temperature Dependence of Hot Carrier and Positive Bias Stress Degradation in Double-Gated Graphene Field-Effect Transistors";
Talk: Graphene 2015, Bilbao, Spain; 2015-03-10 - 2015-03-13; in "Abstracts Graphene 2015", (2015), 1 page(s) . BibTeX

324. Yu. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, M. Lemme, T. Grasser:
"Impact of Hot Carrier Stress on the Defect Density and Mobility in Double-Gated Graphene Field-Effect Transistors";
Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Bologna, Italy; 2015-01-26 - 2015-01-28; in "Proceedings of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2015), ISBN: 978-1-4799-6910-4, 81 - 84 doi:10.1109/ULIS.2015.7063778. BibTeX

323. P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser:
"A Model for Hot-Carrier Degradation in nLDMOS Transistors Based on the Exact Solution of the Boltzmann Transport Equation Versus the Drift-Diffusion Scheme";
Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Bologna, Italy; 2015-01-26 - 2015-01-28; in "Proceedings of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2015), 21 - 24 doi:10.1109/ULIS.2015.7063763. BibTeX

322. J. Franco, B. Kaczer, N. Waldron, Ph. J. Roussel, A. Alian, M. Pourghaderi, Z. Ji, T. Grasser, T. Kauerauf, S. Sioncke, N. Collaert, A. Thean, G. Groeseneken:
"RTN and PBTI-induced Time-Dependent Variability of Replacement Metal-Gate High-k InGaAs FinFETs";
Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 2014-12-15 - 2014-12-17; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2014), ISBN: 978-1-4799-8001-7, 506 - 509 doi:10.1109/IEDM.2014.7047087. BibTeX

321. T. Grasser, W. Gös, Y. Wimmer, F. Schanovsky, G. Rzepa, M. Waltl, K. Rott, H. Reisinger, V. Afanas´Ev, A. Stesmans, A. El-Sayed, A. Shluger:
"On the Microscopic Structure of Hole Traps in pMOSFETs";
Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 2014-12-15 - 2014-12-17; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2014), ISBN: 978-1-4799-8001-7, 530 - 533 doi:10.1109/IEDM.2014.7047093. BibTeX

320. K. Giering, C. Sohrmann, G. Rzepa, L. Heiß, T. Grasser, R. Jancke:
"NBTI Modeling in Analog Circuits and its Application to Long-Term Aging Simulations";
Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2014-10-12 - 2014-10-16; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2014), ISBN: 978-1-4799-7308-8, 29 - 34 doi:10.1109/IIRW.2014.7049501. BibTeX

319. S. E. Tyaginov, M. Bina, J. Franco, Y. Wimmer, F. Rudolf, H. Enichlmair, J.M. Park, B. Kaczer, H. Ceric, T. Grasser:
"Dominant Mechanism of Hot-Carrier Degradation in Short- and Long-Channel Transistors";
Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2014-10-12 - 2014-10-16; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2014), ISBN: 978-1-4799-7308-8, 63 - 68 doi:10.1109/IIRW.2014.7049512. BibTeX

318. Y. Wimmer, S. E. Tyaginov, F. Rudolf, K. Rupp, M. Bina, H. Enichlmair, J.M. Park, R. Minixhofer, H. Ceric, T. Grasser:
"Physical Modeling of Hot-Carrier Degradation in nLDMOS Transistors";
Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2014-10-12 - 2014-10-16; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2014), ISBN: 978-1-4799-7308-8, 58 - 62 doi:10.1109/IIRW.2014.7049511. BibTeX

317. G.A. Rott, K. Rott, H. Reisinger, W. Gustin, T. Grasser:
"Mixture of Negative Bias Temperature Instability and Hot-Carrier Driven Threshold Voltage Degradation of 130 nm Technology p-Channel Transistors";
Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Berlin, Germany; 2014-09-29 - 2014-10-02; in "Abstracts 25th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)", (2014), 40. BibTeX

316. O. Baumgartner, Z. Stanojevic, L. Filipovic, A. Grill, T. Grasser, H. Kosina, M. Karner:
"Investigation of Quantum Transport in Nanoscaled GaN High Electron Mobility Transistors";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 2014-09-09 - 2014-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 117 - 120 doi:10.1109/SISPAD.2014.6931577. BibTeX

315. W. Gös, M. Waltl, Y. Wimmer, G. Rzepa, T. Grasser:
"Advanced Modeling of Charge Trapping: RTN, 1/f noise, SILC, and BTI";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; (invited) 2014-09-09 - 2014-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 77 - 80 doi:10.1109/SISPAD.2014.6931567. BibTeX

314. K. Rupp, M. Bina, Y. Wimmer, A. Jungel, T. Grasser:
"Cell-Centered Finite Volume Schemes for Semiconductor Device Simulation";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 2014-09-09 - 2014-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 365 - 368 doi:10.1109/SISPAD.2014.6931639. BibTeX

313. G. Rzepa, W. Gös, G.A. Rott, K. Rott, M. Karner, C. Kernstock, B. Kaczer, H. Reisinger, T. Grasser:
"Physical Modeling of NBTI: From Individual Defects to Devices";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 2014-09-09 - 2014-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 81 - 84 doi:10.1109/SISPAD.2014.6931568. BibTeX

312. S. E. Tyaginov, M. Bina, J. Franco, Y. Wimmer, D. Osintsev, B. Kaczer, T. Grasser:
"A Predictive Physical Model for Hot-Carrier Degradation in Ultra-Scaled MOSFETs";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 2014-09-09 - 2014-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 89 - 92 doi:10.1109/SISPAD.2014.6931570. BibTeX

311. S. E. Tyaginov, M. Bina, J. Franco, B. Kaczer, T. Grasser:
"On the Importance of Electron-electron Scattering for Hot-carrier Degradation";
Talk: International Conference on Solid State Devices and Materials (SSDM), Tsukuba, Japan; 2014-09-08 - 2014-09-11; in "Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials (SSDM)", (2014), 858 - 859. BibTeX

310. E. Bury, R. Degraeve, M. Cho, B. Kaczer, W. Gös, T. Grasser, N. Horiguchi, G. Groeseneken:
"Study of (correlated) trap sites in SILC, BTI and RTN in SiON and HKMG Devices";
Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, Singapore; 2014-06-30 - 2014-07-04; in "Proceedings of the 21st International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2014), ISBN: 978-1-4799-3929-9, 254 - 257. BibTeX

309. T. Grasser, K. Rott, H. Reisinger, M. Waltl, W. Gös:
"Evidence for Defect Pairs in SiON pMOSFETs";
Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, Singapore; 2014-06-30 - 2014-07-04; in "Proceedings of the 21st International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2014), ISBN: 978-1-4799-3929-9, 228 - 263. BibTeX

308. K. Rupp, F. Rudolf, J. Weinbub, A. Jungel, T. Grasser:
"Automatic Finite Volume Discretizations Through Symbolic Computations";
Talk: European Seminar on Computing (ESCO), Pilsen, Czech Republic; 2014-06-15 - 2014-06-20; in "Proc. 4th European Seminar on Computing", (2014), 192. BibTeX

307. Yu. Illarionov, A. Smith, S. Vaziri, M. Ostling, T. Müller, M. Lemme, T. Grasser:
"Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors: A Reliability Challenge";
Talk: Silicon Nanoelectronics Workshop, Honolulu, Hawaii, USA; 2014-06-08 - 2014-06-09; in "2014 IEEE Silicon Nanoelectronics Workshop", (2014), ISBN: 978-1-4799-5677-7, 29 - 30. BibTeX

306. M. Vexler, Yu. Illarionov, S. E. Tyaginov, N. S. Sokolov, V. V. Fedorov, T. Grasser:
"Simulation of the Electrical Characteristics of the Devices with Thin Calcium Fluoride Films on Silicon-(111) Using MINIMOS-NT";
Talk: DIELECTRICS-2014, St-Petersburg, Russia; 2014-06-02 - 2014-06-06; in "Materials of XIII International conference DIELECTRICS", (2014), 159 - 162. BibTeX

305. T. Grasser, K. Rott, H. Reisinger, M. Waltl, J. Franco, B. Kaczer:
"A unified perspective of RTN and BTI";
Talk: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 2014-06-01 - 2014-06-05; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2014), ISBN: 978-1-4799-3317-4, 4A.5.1 - 4A.5.7. BibTeX

304. Yu. Illarionov, M. Bina, S. E. Tyaginov, K. Rott, H. Reisinger, B. Kaczer, T. Grasser:
"A Reliable Method for the Extraction of the Lateral Position of Defects in Ultra-scaled MOSFETs";
Poster: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 2014-06-01 - 2014-06-05; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2014), ISBN: 978-1-4799-3317-4, XT13.1 - XT13.6. BibTeX

303. B. Kaczer, C. Chen, P. Weckx, Ph. J. Roussel, M. Toledano-Luque, M. Cho, J. Watt, K. Chanda, G. Groeseneken, T. Grasser:
"Maximizing reliable performance of advanced CMOS circuits-A case study";
Talk: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 2014-06-01 - 2014-06-05; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2014), ISBN: 978-1-4799-3317-4, 2D.4.1 - 2D.4.6. BibTeX

302. S. E. Tyaginov, M. Bina, J. Franco, D. Osintsev, O. Triebl, B. Kaczer, T. Grasser:
"Physical Modeling of Hot-Carrier Degradation for Short- and Long-channel MOSFETs";
Poster: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 2014-06-01 - 2014-06-05; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2014), ISBN: 978-1-4799-3317-4, XT16.1 - XT16.8. BibTeX

301. M. Waltl, W. Gös, K. Rott, H. Reisinger, T. Grasser:
"A Single-Trap Study of PBTI in SiON nMOS Transistors: Similarities and Differences to the NBTI/pMOS Case";
Talk: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 2014-06-01 - 2014-06-05; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2014), ISBN: 978-1-4799-3317-4, XT18.1 - XT18.5. BibTeX

300. T. Grasser, G. Rzepa, M. Waltl, W. Gös, K. Rott, G.A. Rott, H. Reisinger, J. Franco, B. Kaczer:
"Characterization and Modeling of Charge Trapping: From Single Defects to Devices";
Talk: IEEE International Conference on IC Design and Technology (ICICDT), Austin, TX, USA; (invited) 2014-05-28 - 2014-05-30; in "Proceedings of IEEE International Conference on IC Design and Technology", (2014), ISBN: 978-1-4799-2153-9, 1 - 4 doi:10.1109/ICICDT.2014.6838620. BibTeX

299. K. Rupp, Ph. Tillet, F. Rudolf, J. Weinbub, T. Grasser, A. Jüngel:
"Performance Portability Study of Linear Algebra Kernels in OpenCL";
Talk: International Workshop on OpenCL (IWOCL), Bristol, UK; 2014-05-12 - 2014-05-13; in "Proceedings of the International Workshop on OpenCL 2013 & 2014 (IWOCL)", (2014), ISBN: 978-1-4503-3007-7, 11 page(s) doi:10.1145/2664666.2664674. BibTeX

298. K. Rupp, Ph. Tillet, A. Jungel, T. Grasser:
"Achieving Portable High Performance for Iterative Solvers on Accelerators";
Talk: Annual Meeting of the International Association of Applied Mathematics and Mechanics (GAMM), Erlangen, Germany; 2014-03-10 - 2014-03-14; in "Book of Abstracts", (2014), 815. BibTeX

297. J. Franco, B. Kaczer, Ph. J. Roussel, J. Mitard, S. Sioncke, L. Witters, H. Mertens, T. Grasser, G. Groeseneken:
"Understanding the Suppressed Charge Trapping in Relaxed- and Strained Ge/SiO2/HfO2 pMOSFETs and Implications for the Screening of Alternative High-Mobility Substrate/Dielectric CMOS Gate Stacks";
Talk: IEEE International Electron Devices Meeting (IEDM), Washington, DC, USA; 2013-12-09 - 2013-12-11; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2013), 397 - 400 doi:10.1109/IEDM.2013.6724634. BibTeX

296. T. Grasser, K. Rott, H. Reisinger, M. Waltl, P.-J. Wagner, F. Schanovsky, W. Gös, G. Pobegen, B. Kaczer:
"Hydrogen-Related Volatile Defects as the Possible Cause for the Recoverable Component of NBTI";
Talk: IEEE International Electron Devices Meeting (IEDM), Washington, DC, USA; 2013-12-09 - 2013-12-11; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2013), 409 - 412 doi:10.1109/IEDM.2013.6724637. BibTeX

295. T. Grasser, K. Rott, H. Reisinger, M. Waltl, F. Schanovsky, W. Gös, B. Kaczer:
"Recent Advances in Understanding Oxide Traps in pMOS Transistors";
Talk: International Workshop on Dielectric Thin Films For Future Electron Devices: Science and Technology, Tokyo, Japan; (invited) 2013-11-07 - 2013-11-09; in "Proceedings of 2013 IWDTF", (2013), ISBN: 978-4-86348-383-5, 95 - 96. BibTeX

294. W. Gös, M. Toledano-Luque, F. Schanovsky, M. Bina, O. Baumgartner, B. Kaczer, T. Grasser:
"Multi-Phonon Processes as the Origin of Reliability Issues";
Talk: Meeting of the Electrochemical Society (ECS), San Francisco, USA; (invited) 2013-10-27 - 2013-11-01; in "ECS Transactions 2013 - "Semiconductors, Dielectrics, and Materials for Nanoelectronics 11"", (2013), 58/7/, 31 - 47 doi:10.1149/05807.0031ecst. BibTeX

293. R. Coppeta, H. Ceric, D. Holec, T. Grasser:
"Critical thickness for GaN thin film on AlN substrate";
Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 2013-10-13 - 2013-10-17; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2013), ISBN: 978-1-4799-0350-4, 133 - 136. BibTeX

292. J. Franco, B. Kaczer, P. Roussel, M. Toledano-Luque, P. Weckx, T. Grasser:
"Relevance of non-exponential single-defect-induced threshold voltage shifts for NBTI Variability";
Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 2013-10-13 - 2013-10-17; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2013), ISBN: 978-1-4799-0350-4, 69 - 72. BibTeX

291. B. Kaczer, C. Chen, J. Watt, K. Chanda, P. Weckx, M. Toledano-Luque, G. Groeseneken, T. Grasser:
"Reliability and Performance Considerations for NMOSFET Pass Gates in FPGA Applications";
Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 2013-10-13 - 2013-10-17; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2013), ISBN: 978-1-4799-0350-4, 94 - 97. BibTeX

290. G.A. Rott, H. Nielen, H. Reisinger, W. Gustin, S. E. Tyaginov, T. Grasser:
"Drift Compensating Effect during Hot-Carrier Degradation of 130nm Dual Gate Oxide p-channel Transistors";
Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 2013-10-13 - 2013-10-17; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2013), ISBN: 978-1-4799-0350-4, 73 - 77. BibTeX

289. S. E. Tyaginov, M. Bina, J. Franco, D. Osintsev, Y. Wimmer, B. Kaczer, T. Grasser:
"Essential Ingredients for Modeling of Hot-Carrier Degradation in Ultra-Scaled MOSFETs";
Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 2013-10-13 - 2013-10-17; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2013), ISBN: 978-1-4799-0350-4, 98 - 101. BibTeX

288. W. Gös, M. Toledano-Luque, O. Baumgartner, M. Bina, F. Schanovsky, B. Kaczer, T. Grasser:
"Understanding Correlated Drain and Gate Current Fluctuations";
Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Arcachon, France; (invited) 2013-09-30 - 2013-10-04; in "20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2013), 51 - 56. BibTeX

287. Yu. Illarionov, S. E. Tyaginov, M. Bina, T. Grasser:
"A method to determine the lateral trap position in ultra-scaled MOSFETs";
Talk: Solid State Devices and Materials Conference (SSDM), Fukuoka, Japan; 2013-09-24 - 2013-09-27; in "Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials(SSDM)", (2013), ISBN: 978-4-86348-362-0, 728 - 729. BibTeX

286. K. Rupp, Ph. Tillet, B. Smith, T. Grasser, A. Jungel:
"A Note on the GPU Acceleration of Eigenvalue Computations";
Talk: International Conference of Numerical Analysis and Applied Mathematics (ICNAAM), Rhodes, Greece; 2013-09-21 - 2013-09-27; in "AIP Proceedings, volume 1558", (2013), 1536 - 1539. BibTeX

285. S. E. Tyaginov, D. Osintsev, Yu. Illarionov, J.M. Park, H. Enichlmair, M. I. Vexler, T. Grasser:
"Tunnelling of strongly non-equilibrium carriers in the transistors of traditional configuration";
Poster: XI Russian Conference on Semiconductor Physics, St-Petersburg, Russia; 2013-09-16 - 2013-09-20; in "Abstracts of XI Russian Conference on Semiconductor Physics", (2013), ISBN: 978-5-93634-033-3, 441. BibTeX

284. O. Baumgartner, M. Bina, W. Gös, F. Schanovsky, M. Toledano-Luque, B. Kaczer, H. Kosina, T. Grasser:
"Direct Tunneling and Gate Current Fluctuations";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 2013-09-03 - 2013-09-05; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 17 - 20 doi:10.1109/SISPAD.2013.6650563. BibTeX

283. R. Coppeta, H. Ceric, B. Karunamurthy, T. Grasser:
"Epitaxial Volmer-Weber Growth Modelling";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 2013-09-03 - 2013-09-05; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 45 - 48 doi:10.1109/SISPAD.2013.6650570. BibTeX

282. B. Kaczer, V. Afanas´Ev, K. Rott, F. Cerbu, J. Franco, W. Gös, T. Grasser, O. Madia, D. Nguyen, A. Stesmans, H. Reisinger, M. Toledano-Luque, P. Weckx:
"Experimental characterization of BTI defects";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; (invited) 2013-09-03 - 2013-09-05; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 444 - 450 doi:10.1109/SISPAD.2013.6650670. BibTeX

281. F. Schanovsky, O. Baumgartner, W. Gös, T. Grasser:
"A Detailed Evaluation of Model Defects as Candidates for the Bias Temperature Instability";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 2013-09-03 - 2013-09-05; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 1 - 4 doi:10.1109/SISPAD.2013.6650559. BibTeX

280. F. Schanovsky, W. Gös, T. Grasser:
"Advanced Modeling of Charge Trapping at Oxide Defects";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; (invited) 2013-09-03 - 2013-09-05; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 451 - 458 doi:10.1109/SISPAD.2013.6650671. BibTeX

279. W. Gös, M. Toledano-Luque, O. Baumgartner, M. Bina, F. Schanovsky, B. Kaczer, T. Grasser:
"Understanding Correlated Drain and Gate Current Fluctuations";
Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou, China; 2013-07-15 - 2013-07-19; in "Proceedings of the 20th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2013), ISBN: 978-1-4799-0478-5, 51 - 56. BibTeX

278. M. Toledano-Luque, B. Kaczer, J. Franco, P. Roussel, M. Bina, T. Grasser, M. Cho, P. Weckx, G Groeseneken:
"Degradation of time dependent variability due to interface state generation";
Talk: International Symposium on VLSI Technology, Kyoto, Japan; 2013-06-11 - 2013-06-14; in "2013 Symposium on VLSI Technology (VLSIT)", (2013), ISBN: 978-1-4673-5226-0, 190 - 191. BibTeX

277. W. Gös, M. Toledano-Luque, O. Baumgartner, F. Schanovsky, B. Kaczer, T. Grasser:
"A Comprehensive Model for Correlated Drain and Gate Current Fluctuations";
Talk: International Workshop on Computational Electronics (IWCE), Nara, Japan; 2013-06-04 - 2013-06-07; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7, 46 - 47. BibTeX

276. J. Franco, B. Kaczer, M. Toledano-Luque, Ph. J. Roussel, G. Groeseneken, B. Schwarz, M. Bina, M. Waltl, P.-J. Wagner, T. Grasser:
"Reduction of the BTI Time-Dependent Variability in Nanoscaled MOSFETs by Body Bias";
Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2013-04-14 - 2013-04-18; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2013), 1 - 6. BibTeX

275. T. Grasser:
"Fundamentals of RTN, BTI, and Hot Carrier Degradation: A Matter of Timescales";
Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA (Tutorial); (invited) 2013-04-14 - 2013-04-18; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2013), 1. BibTeX

274. T. Grasser, K. Rott, H. Reisinger, P.-J. Wagner, W. Gös, F. Schanovsky, M. Waltl, M. Toledano-Luque, B. Kaczer:
"Advanced Characterization of Oxide Traps: The Dynamic Time-Dependent Defect Spectroscopy";
Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2013-04-14 - 2013-04-18; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2013), 1 - 6. BibTeX

273. G. Pobegen, M. Nelhiebel, T. Grasser:
"Detrimental impact of hydrogen passivation on NBTI and HC degradation";
Poster: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2013-04-14 - 2013-04-18; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2013), 1 - 6. BibTeX

272. P. Weckx, B. Kaczer, M. Toledano-Luque, T. Grasser, Ph. J. Roussel, H. Kukner, P. Raghavan, F. Catthoor, G. Groeseneken:
"Defect-based Methodology for Workload-dependent Circuit Lifetime Projections - Application to SRAM";
Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2013-04-14 - 2013-04-18; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2013), 1 - 7. BibTeX

271. M. Bina, K. Rupp, S. E. Tyaginov, O. Triebl, T. Grasser:
"Modeling of Hot Carrier Degradation Using a Spherical Harmonics Expansion of the Bipolar Boltzmann Transport Equation";
Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 2012-12-10 - 2012-12-12; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2012), 713 - 716 doi:10.1109/IEDM.2012.6479138. BibTeX

270. T. Grasser, H. Reisinger, K. Rott, M. Toledano-Luque, B. Kaczer:
"On the Microscopic Origin of the Frequency Dependence of Hole Trapping in pMOSFETs";
Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 2012-12-10 - 2012-12-12; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2012), 470 - 473 doi:10.1109/IEDM.2012.6479076. BibTeX

269. T. Grasser, B. Kaczer, H. Reisinger, P.-J. Wagner, M. Toledano-Luque:
"Modeling of the bias temperature instability under dynamic stress and recovery conditions";
Talk: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Xi'an, China; (invited) 2012-10-29 - 2012-11-01; in "11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)", (2012), ISBN: 978-1-4673-2474-8, 1 - 4 doi:10.1109/ICSICT.2012.6466737. BibTeX

268. G. Pobegen, M. Nelhiebel, T. Grasser:
"Recent Results Concerning the Influence of Hydrogen on the Bias Temperature Instability";
Talk: IEEE International Integrated Reliability Workshop, California; 2012-10-14 - 2012-10-18; in "2012 IEEE International Integrated Reliability Workshop Final Report", (2012), 54 - 59. BibTeX

267. K. Rott, D. Schmitt-Landsiedel, H. Reisinger, G.A. Rott, G. Georgakos, C. Schluender, S. Aresu, W. Gustin, T. Grasser:
"Impact and measurement of short term threshold instabilities in MOSFETs of analog circuits";
Talk: IEEE International Integrated Reliability Workshop, California; 2012-10-14 - 2012-10-18; in "IEEE International Integrated Reliability Workshop Final Report", (2012), 31 - 34. BibTeX

266. S. E. Tyaginov, T. Grasser:
"Modeling of Hot-Carrier Degradation: Physics and Controversial Issues";
Talk: IEEE International Integrated Reliability Workshop, California; 2012-10-14 - 2012-10-18; in "IEEE International Integrated Reliability Workshop Final Report", (2012), 206 - 215. BibTeX

265. P.-J. Wagner, B. Kaczer, A. Scholten, H. Reisinger, S. Bychikhin, D. Pogany, L.K.J. Vandamme, T. Grasser:
"On the Correlation Between NBTI, SILC, and Flicker Noise";
Talk: IEEE International Integrated Reliability Workshop, California; 2012-10-14 - 2012-10-18; in "IEEE International Integrated Reliability Workshop Final Report", (2012), 60 - 64. BibTeX

264. M. Waltl, P.-J. Wagner, H. Reisinger, K. Rott, T. Grasser:
"Advanced Data Analysis Algorithms for the Time-Dependent Defect Spectroscopy of NBTI";
Talk: IEEE International Integrated Reliability Workshop, California; 2012-10-14 - 2012-10-18; in "IEEE International Integrated Reliability Workshop Final Report", (2012), 74 - 79. BibTeX

263. J. Franco, B. Kaczer, J. Mitard, M. Toledano-Luque, G. Eneman, Ph. J. Roussel, M. Cho, T. Kauerauf, T. Grasser, L. Witters, G. Hellings, L. Ragnarsson, N. Horiguchi, M. Heyns, G. Groeseneken:
"Reliability of SiGe Channel MOS";
Talk: Honolulu PRiME 2012, Honolulu, USA; 2012-10-07 - 2012-10-12; in "ECS Meeting Abstracts", (2012), MA2012-02, 1 page(s) . BibTeX

262. M. Bina, O. Triebl, B. Schwarz, M. Karner, B. Kaczer, T. Grasser:
"Simulation of Reliability on Nanoscale Devices";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 2012-09-05 - 2012-09-07; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2, 109 - 112. BibTeX

261. K. Rupp, C. Jungemann, M. Bina, A. Jüngel, T. Grasser:
"Bipolar Spherical Harmonics Expansions of the Boltzmann Transport Equation";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 2012-09-05 - 2012-09-07; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2, 19 - 22. BibTeX

260. I. Starkov, H. Enichlmair, S. E. Tyaginov, T. Grasser:
"Charge-Pumping Extraction Techniques for Hot-Carrier Induced Interface and Oxide Trap Spatial Distributions in MOSFETs";
Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2012-07-02 - 2012-07-06; in "Proceedings of the 19th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2012), ISBN: 978-1-4673-0980-6, 1 - 6 doi:10.1109/IPFA.2012.6306266. BibTeX

259. S. E. Tyaginov, I. Starkov, O. Triebl, M. Karner, C. Kernstock, C. Jungemann, H. Enichlmair, J.M. Park, T. Grasser:
"Impact of Gate Oxide Thickness Variations on Hot-Carrier Degradation";
Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2012-07-02 - 2012-07-06; in "Proceedings of the 19th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2012), ISBN: 978-1-4673-0980-6, 1 - 5 doi:10.1109/IPFA.2012.6306265. BibTeX

258. K. Rupp, T. Grasser, A. Jüngel:
"Recent advances in the spherical harmonics expansion of the Boltzmann transport equation";
Talk: Congresso Nationale Simai 2012, Turin, Italy; 2012-06-25 - 2012-06-28; in "Abstracts of Congresso Nationale Simai 2012", (2012), 183. BibTeX

257. I. Starkov, H. Enichlmair, T. Grasser:
"Local Oxide Capacitance as a Crucial Parameter for Characterization of Hot-Carrier Degradation in High-Voltage n-MOSFET";
Talk: Workshop on Dielectrics in Microelectronics (WODIM), Dresden, Germany; 2012-06-25 - 2012-06-27; in "Abstract Booklet", (2012), 40. BibTeX

256. J. Cervenka, A. Steinmair, J.M. Park, E. Seebacher, T. Grasser:
"TCAD Simulations of Statistical Process Variations for High-Voltage LDMOS Transistors";
Talk: European Workshop on CMOS Variability, Nice, France; 2012-06-11 - 2012-06-12; in "Proceedings of the 3rd European Workshop on CMOS Variability", (2012), ISBN: 978-2-914561-56-3, 4 page(s) . BibTeX

255. J. Franco, B. Kaczer, J. Mitard, M. Toledano-Luque, F. Crupi, G. Eneman, Ph. J. Roussel, T. Grasser, M. Cho, T. Kauerauf, L. Witters, G. Hellings, L. Ragnarsson, N. Horiguchi, M. Heyns, G. Groeseneken:
"Superior reliability and reduced Time-Dependent variability in high-mobility SiGe channel pMOSFETs for VLSI logic applications";
Talk: IEEE International Conference on IC Design and Technology (ICICDT), Austin, TX, USA; (invited) 2012-05-30 - 2012-06-01; in "Proceedings of IEEE International Conference on IC Design and Technology", (2012), 1 - 4. BibTeX

254. K. Rupp, P. Lagger, T. Grasser:
"Inclusion of Carrier-Carrier-Scattering Into Arbitrary-Order Spherical Harmonics Expansions of the Boltzmann Transport Equation";
Talk: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 2012-05-22 - 2012-05-25; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2012), 109 - 110. BibTeX

253. T. Grasser:
"Recent Developments in Understanding the Bias Temperature Instability";
Talk: International Conference on Microelectronics (MIEL), Nis, Serbia; (invited) 2012-05-13 - 2012-05-16; in "Proceedings International Conference on Microelectronics (MIEL)", (2012), ISBN: 978-1-4673-0238-8, 315 - 322. BibTeX

252. T. Aichinger, P. Lenahan, T. Grasser, G. Pobegen, M. Nelhiebel:
"Evidence for Pb Center-Hydrogen Complexes after Subjecting PMOS Devices to NBTI Stress - a Combined DCIV/SDR Study";
Poster: International Reliability Physics Symposium (IRPS), Californi, USA; 2012-04-17 - 2012-04-19; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2012), ISBN: 978-1-4577-1680-5, 6 page(s) . BibTeX

251. J. Franco, B. Kaczer, M. Toledano-Luque, Ph. J. Roussel, J. Mitard, L. Ragnarsson, L. Witters, T. Chiarella, M. Togo, N. Horiguchi, G. Groeseneken, M. F. Bukhori, T. Grasser, A. Asenov:
"Impact of Single Charged Gate Oxide Defects on the Performance and Scaling of Nanoscaled FETs";
Talk: International Reliability Physics Symposium (IRPS), Californi, USA; 2012-04-17 - 2012-04-19; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2012), ISBN: 978-1-4577-1680-5, 6 page(s) . BibTeX

250. T. Grasser, B. Kaczer, H. Reisinger, P.-J. Wagner, M. Toledano-Luque:
"On the Frequency Dependence of the Bias Temperature Instability";
Poster: International Reliability Physics Symposium (IRPS), Californi, USA; 2012-04-17 - 2012-04-19; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2012), ISBN: 978-1-4577-1680-5, 6 page(s) . BibTeX

249. B. Kaczer, J. Franco, M. Toledano-Luque, Ph. J. Roussel, M. F. Bukhori, A. Asenov, B. Schwarz, M. Bina, T. Grasser, G. Groeseneken:
"The Relevance of Deeply-Scaled FET Threshold Voltage Shifts for Operation Lifetimes";
Talk: International Reliability Physics Symposium (IRPS), Californi, USA; 2012-04-17 - 2012-04-19; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2012), ISBN: 978-1-4577-1680-5, 6 page(s) . BibTeX

248. F. Schanovsky, T. Grasser:
"On the Microscopic Limit of the Modified Reaction-Diffusion Model for the Negative Bias Temperature Instability";
Poster: International Reliability Physics Symposium (IRPS), Californi, USA; 2012-04-17 - 2012-04-19; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2012), ISBN: 978-1-4577-1680-5, 6 page(s) . BibTeX

247. I. Starkov, H. Enichlmair, S. E. Tyaginov, T. Grasser:
"Analysis of the Threshold Voltage Turn-Around Effect in High-Voltage n-MOSFETs Due to Hot-Carrier Stress";
Poster: International Reliability Physics Symposium (IRPS), Californi, USA; 2012-04-17 - 2012-04-19; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2012), ISBN: 978-1-4577-1680-5, 6 page(s) . BibTeX

246. M. Toledano-Luque, B. Kaczer, E. Simoen, R. Degraeve, J. Franco, Ph. J. Roussel, T. Grasser, G. Groeseneken:
"Correlation of Single Trapping and Detrapping Effects in Drain and Gate Currents of Nanoscaled nFETs and pFETs";
Poster: International Reliability Physics Symposium (IRPS), Californi, USA; 2012-04-17 - 2012-04-19; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2012), ISBN: 978-1-4577-1680-5, 6 page(s) . BibTeX

245. I. Starkov, A. S. Starkov, S. E. Tyaginov, H. Enichlmair, H. Ceric, T. Grasser:
"An Analytical Model for MOSFET Local Oxide Capacitance";
Talk: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 2011-12-07 - 2011-12-09; in "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3, 2 page(s) . BibTeX

244. J. Franco, B. Kaczer, G. Eneman, Ph. J. Roussel, T. Grasser, J. Mitard, L. Ragnarsson, M. Cho, L. Witters, T. Chiarella, M. Togo, W. Wang, A. Hikavyy, R. Loo, N. Horiguchi, G. Groeseneken:
"Superior NBTI Reliability of SiGe Channel pMOSFETs: Replacement Gate, FinFETs, and Impact of Body Bias";
Talk: IEEE International Electron Devices Meeting (IEDM), Washington DC, USA; 2011-12-05 - 2011-12-07; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2011), ISBN: 978-1-4577-0505-2, 4 page(s) doi:10.1109/IEDM.2011.6131580. BibTeX

243. T. Grasser, P.-J. Wagner, H. Reisinger, T. Aichinger, G. Pobegen, M. Nelhiebel, B. Kaczer:
"Analytic Modeling of the Bias Temperature Instability Using Capture/Emission Time Maps";
Talk: IEEE International Electron Devices Meeting (IEDM), Washington DC, USA; 2011-12-05 - 2011-12-07; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2011), ISBN: 978-1-4577-0505-2, 4 page(s) doi:10.1109/IEDM.2011.6131624. BibTeX

242. G. Pobegen, T. Aichinger, M. Nelhiebel, T. Grasser:
"Understanding Temperature Acceleration for NBTI";
Talk: IEEE International Electron Devices Meeting (IEDM), Washington DC, USA; 2011-12-05 - 2011-12-07; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2011), ISBN: 978-1-4577-0505-2, 4 page(s) doi:10.1109/IEDM.2011.6131623. BibTeX

241. K. Rupp, T. Grasser, A. Jüngel:
"On the Feasibility of Spherical Harmonics Expansions of the Boltzmann Transport Equation for Three-Dimensional Device Geometries";
Talk: IEEE International Electron Devices Meeting (IEDM), Washington DC, USA; 2011-12-05 - 2011-12-07; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2011), ISBN: 978-1-4577-0505-2, 4 page(s) doi:10.1109/IEDM.2011.6131667. BibTeX

240. M. Bina, T. Aichinger, G. Pobegen, W. Gös, T. Grasser:
"Modeling of DCIV Recombination Currents Using A Multistate Multiphonon Model";
Talk: IEEE International Integrated Reliability Workshop, South Lake Tahoe, USA; 2011-10-16 - 2011-10-20; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2011), 27 - 31. BibTeX

239. B. Kaczer, M. Toledano-Luque, J. Franco, T. Grasser, Ph. J. Roussel, V. V. A. Camargo, S. Mahato, E. Simoen, F. Catthoor, G.I. Wirth, G. Groeseneken:
"Recent Trends in CMOS Reliability: From Individual Traps to Circuit Simulations";
Talk: IEEE International Integrated Reliability Workshop, South Lake Tahoe, USA; (invited) 2011-10-16 - 2011-10-20; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2011), 32. BibTeX

238. F. Schanovsky, T. Grasser:
"On the Microscopic Limit of the Reaction-Diffusion Model for the Negative Bias Temperature Instability";
Talk: IEEE International Integrated Reliability Workshop, South Lake Tahoe, USA; 2011-10-16 - 2011-10-20; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2011), 17 - 21. BibTeX

237. R. Southwick III, S. T. Purnell, B. A. Rapp, R. J. Thompson, S. K. Pugmire, B. Kaczer, T. Grasser, B. Knowlton:
"Cryogenic to Room Temperature Effects of NBTI in High-k PMOS Devices";
Talk: IEEE International Integrated Reliability Workshop, South Lake Tahoe, USA; 2011-10-16 - 2011-10-20; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2011), 12 - 16. BibTeX

236. G. Pobegen, T. Aichinger, T. Grasser, M. Nelhiebel:
"Impact of Gate Poly Doping and Oxide Thickness on the N- and PBTI in MOSFETs";
Talk: 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, Bordeaux, France; 2011-10-03 - 2011-10-07; in "Proceedings of the 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2011), 1530 - 1534. BibTeX

235. S. E. Tyaginov, I. Starkov, H. Enichlmair, C. Jungemann, J.M. Park, E. Seebacher, R. Orio, H. Ceric, T. Grasser:
"An Analytical Approach for Physical Modeling of Hot-Carrier Induced Degradation";
Talk: 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, Bordeaux, France; 2011-10-03 - 2011-10-07; in "Proceedings of the 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2011), 51, 1525 - 1529. BibTeX

234. K. Rupp, A. Jüngel, T. Grasser:
"A GPU-Accelerated Parallel Preconditioner for the Solution of the Boltzmann Transport Equation for Semiconductors";
Talk: Facing the Multicore Challenge II, Karlsruhe, Germany; 2011-09-28 - 2011-09-30; in "Proceedings of Facing the Multicore Challenge II", (2011), 11 page(s) . BibTeX

233. W. Gös, F. Schanovsky, H. Reisinger, B. Kaczer, T. Grasser:
"Bistable Defects as the Cause for NBTI and RTN";
Talk: Gettering and Defect Engineering in Semiconductor Technology, Loipersdorf, Austria; (invited) 2011-09-25 - 2011-09-30; in "GADEST 2011: Abstract Booklet", (2011), 153. BibTeX

232. I. Starkov, S. E. Tyaginov, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser:
"Accurate Extraction of MOSFET Interface State Spatial Distribution from Charge Pumping Measurements";
Talk: Gettering and Defect Engineering in Semiconductor Technology, Loipersdorf, Austria; 2011-09-25 - 2011-09-30; in "GADEST 2011: Abstract Booklet", (2011), 105 - 106. BibTeX

231. S. E. Tyaginov, I. Starkov, C. Jungemann, H. Enichlmair, J.M. Park, T. Grasser:
"Impact of the Carrier Distribution Function on Hot-Carrier Degradation Modeling";
Talk: European Solid-State Device Research Conference (ESSDERC), Helsinki, Finland; 2011-09-12 - 2011-09-16; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2011), 151 - 154. BibTeX

230. Ph. Hehenberger, W. Gös, O. Baumgartner, J. Franco, B. Kaczer, T. Grasser:
"Quantum-Mechanical Modeling of NBTI in High-k SiGe MOSFETs";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 11 - 14 doi:10.1109/SISPAD.2011.6035036. BibTeX

229. K. Rupp, T. Grasser, A. Jüngel:
"Adaptive Variable-Order Spherical Harmonics Expansion of the Boltzmann Transport Equation";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 151 - 155 doi:10.1109/SISPAD.2011.6034964. BibTeX

228. K. Rupp, T. Grasser, A. Jüngel:
"Parallel Preconditioning for Spherical Harmonics Expansions of the Boltzmann Transport Equation";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 147 - 150 doi:10.1109/SISPAD.2011.6034963. BibTeX

227. F. Schanovsky, O. Baumgartner, T. Grasser:
"Multi Scale Modeling of Multi Phonon Hole Capture in the Context of NBTI";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 15 - 18 doi:10.1109/SISPAD.2011.6035038. BibTeX

226. I. Starkov, H. Ceric, S. E. Tyaginov, T. Grasser, H. Enichlmair, J.M. Park, C. Jungemann:
"Analysis of Worst-Case Hot-Carrier Degradation Conditions in the Case of n- and p-channel High-Voltage MOSFETs";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 127 - 130 doi:10.1109/SISPAD.2011.6035066. BibTeX

225. S. E. Tyaginov, I. Starkov, O. Triebl, H. Ceric, T. Grasser, H. Enichlmair, J.M. Park, C. Jungemann:
"Secondary Generated Holes as a Crucial Component for Modeling of HC Degradation in High-Voltage n-MOSFET";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 123 - 126 doi:10.1109/SISPAD.2011.6035065. BibTeX

224. I. Starkov, H. Ceric, S. E. Tyaginov, T. Grasser:
"Analysis of Worst-Case Hot-Carrier Conditions for n-type MOSFET";
Talk: 7th Conference on PhD Research in Microelectronics and Electronics (PRIME), Madonna di Campiglio, Italy; 2011-07-03 - 2011-07-07; in "Proceedings of the 7th Conference on PhD Research in Microelectronics and Electronics", (2011), ISBN: 978-1-4244-9136-0, 4 page(s) doi:10.1109/PRIME.2011.5966251. BibTeX

223. M. Toledano-Luque, B. Kaczer, J. Franco, Ph. J. Roussel, T. Grasser, T. Y. Hoffmann, G. Groeseneken:
"From Mean Values to Distributions of BTI Lifetime of Deeply Scaled FETs Through Atomistic Understanding of the Degradation";
Talk: Symposium on VLSI Technology, Kyoto, Japan; 2011-06-14 - 2011-06-16; in "2011 Symposium on VLSI Technology Digest of Technical Papers", (2011), ISBN: 978-1-4244-9949-6, 2 page(s) . BibTeX

222. W. Gös, F. Schanovsky, T. Grasser, H. Reisinger, B. Kaczer:
"Advanced Modeling of Oxide Defects for Random Telegraph Noise";
Talk: International Conference on Noise and Fluctuations (ICNF), Toronto, Canada; 2011-06-12 - 2011-06-16; in "Proceedings of the 21st International Conference on Noise and Fluctuations", (2011), 4 page(s) . BibTeX

221. S. E. Tyaginov, I. Starkov, H. Enichlmair, J.M. Park, C. Jungemann, T. Grasser:
"Physics-Based Hot-Carrier Degradation Modeling";
Talk: 219th ECS Meeting, Montreal, Canada; (invited) 2011-05-01 - 2011-05-06; in "Meet. Abstr. - Electrochem. Soc. 2011", (2011)", (2011), 1 page(s) . BibTeX

220. J. Franco, B. Kaczer, G. Eneman, Ph. J. Roussel, M. Cho, J. Mitard, L. Witters, T. Y. Hoffmann, G. Groeseneken, F. Crupi, T. Grasser:
"On the Recoverable and Permanent Components of Hot Carrier and NBTI in Si pMOSFETs and their Implications in Si0.45Ge0.55 pMOSFETs";
Talk: International Reliability Physics Symposium (IRPS), Monterey; 2011-04-12 - 2011-04-14; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2011), 6 page(s) doi:10.1109/IRPS.2011.5784545. BibTeX

219. T. Grasser, T. Aichinger, G. Pobegen, H. Reisinger, P.-J. Wagner, J. Franco, M. Nelhiebel, B. Kaczer:
"The `Permanent´ Component of NBTI: Composition and Annealing";
Talk: International Reliability Physics Symposium (IRPS), Monterey; 2011-04-12 - 2011-04-14; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2011), 9 page(s) . BibTeX

218. B. Kaczer, S. Mahato, V. Valduga de Almeida Camargo, M. Toledano-Luque, Ph. J. Roussel, T. Grasser, F. Catthoor, P. Dobrovolny, P. Zuber, G.I. Wirth, G. Groeseneken:
"Atomistic Approach to Variability of Bias-Temperature Instability in Circuit Simulations";
Poster: International Reliability Physics Symposium (IRPS), Monterey; 2011-04-12 - 2011-04-14; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2011), 5 page(s) . BibTeX

217. H. Reisinger, T. Grasser, K. Ermisch, H. Nielen, W. Gustin, C. Schlünder:
"Understanding and Modeling AC BTI";
Talk: International Reliability Physics Symposium (IRPS), Monterey; 2011-04-12 - 2011-04-14; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2011), 8 page(s) . BibTeX

216. M. Toledano-Luque, B. Kaczer, Ph. J. Roussel, T. Grasser, G.I. Wirth, J. Franco, C. Vrancken, N. Horiguchi, G. Groeseneken:
"Response of a Single Trap to AC Negative Bias Temperature Stress";
Talk: International Reliability Physics Symposium (IRPS), Monterey; 2011-04-12 - 2011-04-14; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2011), 8 page(s) . BibTeX

215. T. Grasser:
"Charge Trapping in Oxides From RTN to BTI";
Talk: International Reliability Physics Symposium (IRPS), Monterey (Tutorial); 2011-04-10 - 2011-04-14; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2011), 128 page(s) . BibTeX

214. J. Franco, B. Kaczer, G. Eneman, J. Mitard, A. Stesmans, V. Afanas´Ev, T. Kauerauf, Ph. J. Roussel, M. Toledano-Luque, M. Cho, R. Degraeve, T. Grasser, L. Ragnarsson, L. Witters, J. Tseng, S. Takeoka, W. Wang, T. Y. Hoffmann, G. Groeseneken:
"6Å EOT Si45Ge55 pMOSFET with Optimized Reliability (VDD=1V): Meeting the NBTI Lifetime Target at Ultra-Thin EOT";
Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 2010-12-06 - 2010-12-08; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2010), 70 - 73 doi:10.1109/IEDM.2010.5703292. BibTeX

213. T. Grasser, B. Kaczer, W. Gös, H. Reisinger, T. Aichinger, Ph. Hehenberger, P.-J. Wagner, F. Schanovsky, J. Franco, Ph. J. Roussel, M. Nelhiebel:
"Recent Advances in Understanding the Bias Temperature Instability";
Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; (invited) 2010-12-06 - 2010-12-08; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2010), 82 - 85 doi:10.1109/IEDM.2010.5703295. BibTeX

212. F. Schanovsky, W. Gös, T. Grasser:
"Ab-Initio Calculation of the Vibrational Influence on Hole-Trapping";
Talk: International Workshop on Computational Electronics (IWCE), Pisa, Italy; 2010-10-26 - 2010-10-29; in "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2010), ISBN: 978-1-4244-9381-4, 163 - 166 doi:10.1109/IWCE.2010.5677989. BibTeX

211. M. F. Bukhori, T. Grasser, B. Kaczer, H. Reisinger, A. Asenov:
"'Atomistic' Simulation of RTS Amplitudes Due to Single and Multiple Charged Defect States and Their Interactions";
Talk: IEEE International Integrated Reliability Workshop, California; 2010-10-17 - 2010-10-21; in "Final Report of IEEE International Integrated Reliability Workshop", (2010), 76 - 79 doi:10.1109/IIRW.2010.5706490. BibTeX

210. T. Grasser, T. Aichinger, H. Reisinger, J. Franco, P.-J. Wagner, M. Nelhiebel, C. Ortolland, B. Kaczer:
"On the 'Permanent' Component of NBTI";
Talk: IEEE International Integrated Reliability Workshop, California; 2010-10-17 - 2010-10-21; in "Final Report of IEEE International Integrated Reliability Workshop", (2010), 2 - 7 doi:10.1109/IIRW.2010.5706472. BibTeX

209. Ph. Hehenberger, H. Reisinger, T. Grasser:
"Recovery of Negative and Positive Bias Temperature Stress in pMOSFETs";
Talk: IEEE International Integrated Reliability Workshop, California; 2010-10-17 - 2010-10-21; in "Final Report of IEEE International Integrated Reliability Workshop", (2010), 8 - 11 doi:10.1109/IIRW.2010.5706473. BibTeX

208. H. Reisinger, T. Grasser, K. Hofmann, W. Gustin, C. Schlünder:
"The Impact of Recovery on BTI Reliability Assessments";
Talk: IEEE International Integrated Reliability Workshop, California; 2010-10-17 - 2010-10-21; in "Final Report of IEEE International Integrated Reliability Workshop", (2010), 12 - 16 doi:10.1109/IIRW.2010.5706474. BibTeX

207. S. E. Tyaginov, I. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser:
"Interface Traps Density-of-States as a Vital Component for Hot-Carrier Degradation Modeling";
Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Montecassino Abbey and Gaeta; 2010-10-11 - 2010-10-15; in "Proceedings of the 21st European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2010), 3 page(s) . BibTeX

206. W. Gös, F. Schanovsky, Ph. Hehenberger, P.-J. Wagner, T. Grasser:
"Charge Trapping and the Negative Bias Temperature Instability";
Talk: 218th ECS Meeting, Las Vegas, USA; 2010-10-10 - 2010-10-15; in "Meet. Abstr. - Electrochem. Soc. 2010", (2010), ISBN: 978-1-56677-822-0, 565 page(s) . BibTeX

205. C. Schlünder, H. Reisinger, W. Gustin, T. Grasser:
"A New Physics-Based NBTI Model for DC-and AC-Stress Enabling Accurate Circuit Aging Simulations Considering Recovery";
Talk: 4. GMM/GI/ITG-Fachtagung Zuverlässigkeit und Entwurf (ZuE 2010), Wildbad Kreuth; 2010-09-13 - 2010-09-15; in "GMM- Fachbericht", (2010), 66, 33 - 40. BibTeX

204. F. Schanovsky, W. Gös, T. Grasser:
"Hole Capture into Oxide Defects in MOS Structures from First Principles";
Poster: Ψk - 2010 Conference, Berlin; 2010-09-12 - 2010-09-16; in "Abstract Book", (2010), 435. BibTeX

203. K. Rupp, T. Grasser, A. Jüngel:
"System Matrix Compression for Spherical Harmonics Expansions of the Boltzmann Transport Equation";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Bologna, Italy; 2010-09-06 - 2010-09-08; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2010), ISBN: 978-1-4244-7699-2, 159 - 162 doi:10.1109/SISPAD.2010.5604542. BibTeX

202. I. Starkov, S. E. Tyaginov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser:
"Analysis of Worst-Case Hot-Carrier Conditions for High Voltage Transistors Based on Full-Band Monte-Carlo Simulations";
Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2010-07-05 - 2010-07-09; in "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9, 139 - 144. BibTeX

201. S. E. Tyaginov, I. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser:
"Hot-Carrier Degradation Modeling Using Full-Band Monte-Carlo Simulations";
Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2010-07-05 - 2010-07-09; in "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9, 341 - 345. BibTeX

200. P.-J. Wagner, T. Grasser, H. Reisinger, B. Kaczer:
"Oxide Traps in MOS Transistors: Semi-Automatic Extraction of Trap Parameters from Time Dependent Defect Spectroscopy";
Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2010-07-05 - 2010-07-09; in "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9, 134 - 138. BibTeX

199. B. Kaczer, T. Grasser, J. Franco, M. Toledano-Luque, Ph. J. Roussel, G. Groeseneken:
"Recent Trends in Bias Temperature Instability";
Talk: Workshop on Dielectrics in Microelectronics (WODIM), Bratislava; (invited) 2010-06-28 - 2010-06-30; in "Book of Abstracts", (2010), 55. BibTeX

198. F. Schanovsky, W. Gös, T. Grasser:
"Mulit-Phonon Hole-Trapping from First-Principles";
Talk: Workshop on Dielectrics in Microelectronics (WODIM), Bratislava; 2010-06-28 - 2010-06-30; in "Book of Abstracts", (2010), 54. BibTeX

197. I. Starkov, S. E. Tyaginov, H. Enichlmair, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Ceric, T. Grasser:
"HC Degradation Model: Interface State Profile-Simulations vs. Experiment";
Poster: Workshop on Dielectrics in Microelectronics (WODIM), Bratislava; 2010-06-28 - 2010-06-30; in "Book of Abstracts", (2010), 128. BibTeX

196. M. Toledano-Luque, B. Kaczer, Ph. J. Roussel, T. Grasser, G. Groeseneken:
"Temperature Dependence of the Emission and Capture Times of SiON Individual Traps after Positive Bias Temperature Stress";
Talk: Workshop on Dielectrics in Microelectronics (WODIM), Bratislava; 2010-06-28 - 2010-06-30; in "Book of Abstracts", (2010), 28. BibTeX

195. T. Aichinger, S. Puchner, M. Nelhiebel, T. Grasser, H. Hutter:
"Impact of Hydrogen on Recoverable and Permanent Damage following Negative Bias Temperature Stress";
Talk: International Reliability Physics Symposium (IRPS), Anaheim; 2010-05-02 - 2010-05-06; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2010), ISBN: 978-1-4244-5431-0, 1063 - 1068. BibTeX

194. J. Franco, B. Kaczer, M. Cho, G. Eneman, G. Groeseneken, T. Grasser:
"Improvements of NBTI Reliability in SiGe p-FETs";
Talk: International Reliability Physics Symposium (IRPS), Anaheim; 2010-05-02 - 2010-05-06; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2010), ISBN: 978-1-4244-5431-0, 1082 - 1085. BibTeX

193. T. Grasser, H. Reisinger, P. Wagner, B. Kaczer, F. Schanovsky, W. Gös:
"The Time Dependent Defect Spectroscopy (TDDS) for the Characterization of the Bias Temperature Instability";
Talk: International Reliability Physics Symposium (IRPS), Anaheim; 2010-05-02 - 2010-05-06; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2010), ISBN: 978-1-4244-5431-0, 16 - 25. BibTeX

192. B. Kaczer, T. Grasser, Ph. J. Roussel, J. Franco, R. Degraeve, L. Ragnarsson, E. Simoen, G. Groeseneken, H. Reisinger:
"Origin of NBTI Variability in Deeply Scaled pFETs";
Talk: International Reliability Physics Symposium (IRPS), Anaheim; 2010-05-02 - 2010-05-06; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2010), ISBN: 978-1-4244-5431-0, 26 - 32. BibTeX

191. G. Pobegen, T. Aichinger, M. Nelhiebel, T. Grasser:
"Dependence of the Negative Bias Temperature Instability on the Gate Oxide Thickness";
Talk: International Reliability Physics Symposium (IRPS), Anaheim; 2010-05-02 - 2010-05-06; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2010), ISBN: 978-1-4244-5431-0, 1073 - 1077. BibTeX

190. H. Reisinger, T. Grasser, C. Schlunder, W. Gustin:
"The Statistical Analysis of Individual Defects constituting NBTI and its Implications for Modeling DC- and AC-Stress";
Talk: International Reliability Physics Symposium (IRPS), Anaheim; 2010-05-02 - 2010-05-06; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2010), ISBN: 978-1-4244-5431-0, 7 - 15. BibTeX

189. J. Ryan, P. Lenahan, T. Grasser, H. Enichlmair:
"Recovery-Free Electron Spin Resonance Observations of NBTI Degradation";
Talk: International Reliability Physics Symposium (IRPS), Anaheim; 2010-05-02 - 2010-05-06; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2010), ISBN: 978-1-4244-5431-0, 43 - 49. BibTeX

188. K. Rupp, T. Grasser, A. Jüngel:
"A Matrix Compression Scheme for Spherical Harmonics Expansions of the Boltzmann Transport Equation";
Talk: Junior Scientist Conference 2010 (JSC 2010), Wien; 2010-04-07 - 2010-04-09; in "Proceedings of the Junior Scientist Conference 2010", (2010), ISBN: 978-3-200-01797-9, 7 - 8. BibTeX

187. T. Grasser, H. Reisinger, W. Gös, T. Aichinger, Ph. Hehenberger, P.-J. Wagner, M. Nelhiebel, J. Franco, B. Kaczer:
"Switching Oxide Traps as the Missing Link Between Negative Bias Temperature Instability and Random Telegraph Noise";
Talk: IEEE International Electron Devices Meeting (IEDM), Baltimore, MD, USA; 2009-12-07 - 2009-12-09; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2009), 1 - 4 doi:10.1109/IEDM.2009.5424235. BibTeX

186. B. Bindu, W. Gös, B. Kaczer, T. Grasser:
"Analytical Solution of the Switching Trap Model for Negative Bias Temperature Stress";
Talk: IEEE International Reliability Workshop (IIRW), S. Lake Tahoe; 2009-10-18 - 2009-10-22; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2009), ISBN: 978-1-4244-3921-8, 93 - 96. BibTeX

185. H. Reisinger, T. Grasser, C. Schlünder:
"A Study of NBTI by the Statistical Analysis of the Properties of Individual Defects in pMOSFETS";
Talk: IEEE International Reliability Workshop (IIRW), S. Lake Tahoe; 2009-10-18 - 2009-10-22; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2009), ISBN: 978-1-4244-3921-8, 30 - 35. BibTeX

184. J. Ryan, P. Lenahan, T. Grasser, H. Enichlmair:
"What Triggers NBTI? An "On The Fly" Electron Spin Resonance Approach";
Talk: IEEE International Reliability Workshop (IIRW), S. Lake Tahoe; 2009-10-18 - 2009-10-22; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2009), ISBN: 978-1-4244-3921-8, 42 - 45. BibTeX

183. R. Southwick III, B. Knowlton, B. Kaczer, T. Grasser:
"On the Thermal Activation of Negative Bias Temperature Instability";
Talk: IEEE International Reliability Workshop (IIRW), S. Lake Tahoe; 2009-10-18 - 2009-10-22; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2009), ISBN: 978-1-4244-3921-8, 36 - 41. BibTeX

182. Ph. Hehenberger, P.-J. Wagner, H. Reisinger, T. Grasser:
"On the Temperature and Voltage Dependence of Short-Term Negative Bias Temperature Stress";
Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Bordeaux; 2009-10-05 - 2009-10-09; in "Proceedings of the 20th European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2009), 4 page(s) . BibTeX

181. S. E. Tyaginov, V. Sverdlov, W. Gös, T. Grasser:
"Impact of O-Si-O Bond Angle Fluctuations on the Si-O Bond-Breakage Rate";
Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Bordeaux; 2009-10-05 - 2009-10-09; in "Proceedings of the 20th European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2009), . BibTeX

180. Ph. Hehenberger, P.-J. Wagner, H. Reisinger, T. Grasser:
"Comparison of Fast Measurement Methods for Short-Term Negative Bias Temperature Stress and Relaxation";
Talk: European Solid-State Device Research Conference (ESSDERC), Athens; 2009-09-14 - 2009-09-18; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2009), ISBN: 978-1-4244-4351-2, 311 - 314. BibTeX

179. W. Gös, T. Grasser, M. Karner, B. Kaczer:
"A Model for Switching Traps in Amorphous Oxides";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego, CA, USA; 2009-09-09 - 2009-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2009), ISBN: 978-1-4244-3947-8, 159 - 162 doi:10.1109/SISPAD.2009.5290226. BibTeX

178. I. Starkov, S. E. Tyaginov, T. Grasser:
"Green´s Function Asymptotic in Two-Layered Periodic Medium";
Talk: 17th International Symposium NANOSTRUCTURES: Physics and Technology, Minsk; 2009-06-22 - 2009-06-26; in "Proceedings of the International Symposium NANOSTRUCTURES: Physics and Technology", (2009), 111 - 112. BibTeX

177. P.-J. Wagner, T. Aichinger, T. Grasser, M. Nelhiebel, L.K.J. Vandamme:
"Possible Correlation between Flicker Noise and Bias Temperature Stress";
Talk: International Conference on Noise and Fluctuations (ICNF), Pisa; 2009-06-14 - 2009-06-19; in "Proceedings of the 20th International Conference on Noise and Fluctuations", (2009), 621 - 624. BibTeX

176. V. Sverdlov, M. Vasicek, J. Cervenka, T. Grasser, H. Kosina, S. Selberherr:
"Transport in Nanostructures: A Comparative Analysis Using Monte Carlo Simulation, the Spherical Harmonic Method, and Higher Moments Models";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol; 2009-06-04 - 2009-06-08; in "Abstracts of the International Conference on Large-Scale Scientific Computations (LSSC)", (2009), 93. BibTeX

175. S. E. Tyaginov, V. Sverdlov, W. Gös, T. Grasser:
"Statistics of Si-O Bond-Breakage Rate Variations induced by O-Si-O Angle Fluctuations";
Talk: International Workshop on Computational Electronics (IWCE), Beijing, China; 2009-05-27 - 2009-05-29; in "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2009), ISBN: 978-1-4244-3926-3, 29 - 32 doi:10.1109/IWCE.2009.5091156. BibTeX

174. T. Grasser, B. Kaczer:
"Critical Modeling Issues in Negative Bias Temperature Instability";
Talk: 215th ECS Meeting, San Francisco; (invited) 2009-05-24 - 2009-05-29; in "Meeting Abstracts MA 2009-01", (2009), ISSN: 1091-8213, 793. BibTeX

173. T. Aichinger, M. Nelhiebel, T. Grasser:
"On the Temperature Dependence of NBTI Recovery";
Talk: International Reliability Physics Symposium (IRPS), Montreal; (invited) 2009-04-26 - 2009-04-30; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2009), 1. BibTeX

172. T. Aichinger, M. Nelhiebel, T. Grasser:
"Unambiguous Identification of the NBTI Recovery Mechanism using Ultra-Fast Temperature Changes";
Talk: International Reliability Physics Symposium (IRPS), Montreal; 2009-04-26 - 2009-04-30; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2009), 2 - 7. BibTeX

171. T. Grasser, B. Kaczer, W. Gös, T. Aichinger, Ph. Hehenberger, M. Nelhiebel:
"A Two-Stage Model for Negative Bias Temperature Instability";
Talk: International Reliability Physics Symposium (IRPS), Montreal; 2009-04-26 - 2009-04-30; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2009), 33 - 44. BibTeX

170. Ph. Hehenberger, T. Aichinger, T. Grasser, W. Gös, O. Triebl, B. Kaczer, M. Nelhiebel:
"Do NBTI-Induced Interface States Show Fast Recovery? A Study Using a Corrected On-The-Fly Charge-Pumping Measurement Technique";
Poster: International Reliability Physics Symposium (IRPS), Montreal; 2009-04-26 - 2009-04-30; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2009), 1033 - 1038. BibTeX

169. B. Kaczer, T. Grasser, J. Martin-Martinez, E. Simoen, M. Aoulaiche, Ph. J. Roussel, G. Groeseneken:
"NBTI from the Perspective of Defect States with Widely Distributed Time Scales";
Talk: International Reliability Physics Symposium (IRPS), Montreal; 2009-04-26 - 2009-04-30; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2009), 55 - 60. BibTeX

168. S. E. Tyaginov, W. Gös, T. Grasser, V. Sverdlov, P. Schwaha, R. Heinzl, F. Stimpfl:
"Description of Si-O Bond Breakage Using Pair-Wise Interatomic Potentials Under Consideration of the Whole Crystal";
Talk: International Reliability Physics Symposium (IRPS), Montreal; 2009-04-26 - 2009-04-30; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2009), 514 - 522. BibTeX

167. S. E. Tyaginov, V. Sverdlov, W. Gös, P. Schwaha, R. Heinzl, F. Stimpfl, T. Grasser:
"Impact of the Surrounding Network on the Si-O Bond-Breakage Energetics";
Talk: Materials Research Society Spring Meeting (MRS), San Francisco; 2009-04-13 - 2009-04-17; in "Proceedings of the 2009 MRS Spring Meeting", (2009), . BibTeX

166. S. E. Tyaginov, V. Sverdlov, W. Gös, P. Schwaha, R. Heinzl, F. Stimpfl, T. Grasser:
"Si-O Bond-Breakage Energetics under Consideration of the Whole Crystal";
Talk: International Semiconductor Technology Conference & China Semiconductor Technology International Conference, Shanghai; 2009-03-19 - 2009-03-20; in "Proceedings of the International Semiconductor Technology Conference & China Semiconductor Technology International Conference", (2009), 84. BibTeX

165. T. Grasser:
"Towards Understanding Negative Bias Temperature Instability";
IEEE Conference Proceedings, in "Integrated Reliability Workshop Final Report (12-16 Oct. 2008)", (2008), 145 doi:10.1109/IRWS.2008.4796110. BibTeX

164. T. Grasser, B. Kaczer, T. Aichinger, W. Gös, M. Nelhiebel:
"Defect Creation Stimulated by Thermally Activated Hole Trapping as the Driving Force Behind Negative Bias Temperature Instability in SiO2, SiON, and High-k Gate Stacks";
Talk: IEEE International Reliability Workshop (IIRW), Fallen Leaf Lake; 2008-10-18 - 2008-10-22; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2008), 91 - 95. BibTeX

163. H. Reisinger, R. Vollertsen, P.-J. Wagner, T. Huttner, A. Martin, S. Aresu, W. Gustin, T. Grasser, C. Schlünder:
"The Effect of Recovery on NBTI Characterization of Thick Non-Nitrided Oxides";
Talk: IEEE International Reliability Workshop (IIRW), Fallen Leaf Lake; 2008-10-18 - 2008-10-22; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2008), 1 - 6. BibTeX

162. T. Grasser, B. Kaczer, W. Gös:
"An Energy-Level Perspective of Bias Temperature Instability";
Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Maastricht; (invited) 2008-09-29 - 2008-10-02; in "Proceedings of the 19th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis", (2008), . BibTeX

161. W. Gös, M. Karner, S. E. Tyaginov, Ph. Hehenberger, T. Grasser:
"Level Shifts and Gate Interfaces as Vital Ingredients in Modeling of Charge Trapping";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 2008-09-09 - 2008-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7, 69 - 72 doi:10.1109/SISPAD.2008.4648239. BibTeX

160. T. Grasser, W. Gös, B. Kaczer:
"Modeling Bias Temperature Instability During Stress and Recovery";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 2008-09-09 - 2008-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7, 65 - 68 doi:10.1109/SISPAD.2008.4648238. BibTeX

159. M. Vasicek, J. Cervenka, M. Karner, T. Grasser:
"Consistent Higher-Order Transport Models for SOI MOSFETs";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 2008-09-09 - 2008-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7, 129 - 132 doi:10.1109/SISPAD.2008.4648254. BibTeX

158. W. Gös, M. Karner, V. Sverdlov, T. Grasser:
"A Rigorous Model for Trapping and Detrapping in Thin Gate Dielectrics";
Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2008-07-07 - 2008-07-11; in "Proceedings 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2008), ISBN: 978-1-4244-2039-1, 249 - 254. BibTeX

157. T. Grasser:
"Negative Bias Temperature Instability: Modeling Challenges and Perspectives";
Talk: International Reliability Physics Symposium (IRPS), Phoenix (Tutorial); 2008-04-27 - 2008-05-01; in "2008 Reliability Physics Tutorial Notes", (2008), 113 - 120. BibTeX

156. T. Grasser, B. Kaczer, W. Gös:
"An Energy-Level Perspective of Bias Temperature Instability";
Talk: International Reliability Physics Symposium (IRPS), Phoenix; 2008-04-27 - 2008-05-01; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2008), 28 - 38. BibTeX

155. B. Kaczer, T. Grasser, Ph. J. Roussel, J. Martin-Martinez, R. O´Connor, B. O´Sullivan, G. Groeseneken:
"Ubiquitous Relaxation in BTI Stressing-New Evaluation and Insights";
Talk: International Reliability Physics Symposium (IRPS), Phoenix; 2008-04-27 - 2008-05-01; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2008), 20 - 27. BibTeX

154. M. Vasicek, J. Cervenka, M. Wagner, M. Karner, T. Grasser:
"A 2D-Non-Parabolic Six Moments Model";
Talk: International Semiconductor Device Research Symposium (ISDRS), Maryland; 2007-12-12 - 2007-12-14; in "2007 International Semiconductor Device Research Symposium", (2007), ISBN: 978-1-4244-1892-3, 2 page(s) . BibTeX

153. T. Grasser, B. Kaczer, Ph. Hehenberger, W. Gös, R. Connor, H. Reisinger, W. Gustin, C. Schlünder:
"Simultaneous Extraction of Recoverable and Permanent Components Contributing to Bias-Temperature Instability";
Talk: IEEE International Electron Devices Meeting (IEDM), Washington, DC, USA; 2007-12-10 - 2007-12-12; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2007), ISBN: 1-4244-1508-x, 801 - 804 doi:10.1109/IEDM.2007.4419069. BibTeX

152. W. Gös, T. Grasser:
"Charging and Discharging of Oxide Defects in Reliability Issues";
Talk: IEEE International Reliability Workshop (IIRW), Fallen Leaf Lake; 2007-10-15 - 2007-10-18; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2007), ISBN: 1-4244-1171-8, 27 - 32. BibTeX

151. T. Grasser, P.-J. Wagner, Ph. Hehenberger, W. Gös, B. Kaczer:
"A Rigorous Study of Measurement Techniques for Negative Bias Temperature Instability";
Talk: IEEE International Reliability Workshop (IIRW), Fallen Leaf Lake; 2007-10-15 - 2007-10-18; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2007), ISBN: 1-4244-1171-8, 6 - 11. BibTeX

150. M. Vasicek, J. Cervenka, M. Karner, M. Wagner, T. Grasser:
"Parameter Modeling for Higher-Order Transport Models in UTB SOI MOSFETs";
Poster: International Workshop on Computational Electronics (IWCE), Amherst, MA, USA; 2007-10-08 - 2007-10-10; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2007), 96 - 97. BibTeX

149. W. Gös, T. Grasser:
"First-Principles Investigation on Oxide Trapping";
Talk: T. Grasser, S. Selberherr (ed); International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 2007-09-25 - 2007-09-27; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2007), 12, ISBN: 978-3-211-72860-4, 157 - 160 doi:10.1007/978-3-211-72861-1_38. BibTeX

148. H. Kosina, O. Triebl, T. Grasser:
"Box Method for the Convection-Diffusion Equation Based on Exponential Shape Functions";
Poster: T. Grasser, S. Selberherr (ed); International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 2007-09-25 - 2007-09-27; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2007), 12, ISBN: 978-3-211-72860-4, 317 - 320 doi:10.1007/978-3-211-72861-1_76. BibTeX

147. M. Vasicek, M. Karner, E. Ungersböck, M. Wagner, H. Kosina, T. Grasser:
"Modeling of Macroscopic Transport Parameters in Inversion Layers";
Talk: T. Grasser, S. Selberherr (ed); International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 2007-09-25 - 2007-09-27; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2007), 12, ISBN: 978-3-211-72860-4, 201 - 204 doi:10.1007/978-3-211-72861-1_48. BibTeX

146. T. Grasser, B. Kaczer:
"Negative Bias Temperature Instability: Recoverable versus Permanent Degradation";
Talk: European Solid-State Device Research Conference (ESSDERC), München; 2007-09-11 - 2007-09-13; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2007), ISBN: 1-4244-1124-6, 127 - 130. BibTeX

145. O. Triebl, T. Grasser:
"Investigation of Vector Discretization Schemes for Box Volume Methods";
Talk: The Nanotechnology Conference and Trade Show, Santa Clara; 2007-05-20 - 2007-05-24; in "NSTI Nanotech Proceedings", (2007), 3, ISBN: 1-4200-6184-4, 61 - 64. BibTeX

144. O. Baumgartner, M. Karner, S. Holzer, M. Pourfath, T. Grasser, H. Kosina:
"Adaptive Energy Integration of Non-Equilibrium Green´s Functions";
Poster: The Nanotechnology Conference and Trade Show, Santa Clara; 2007-05-19 - 2007-05-24; in "NSTI Nanotech Proceedings", (2007), 3, ISBN: 1-4200-6184-4, 145 - 148. BibTeX

143. T. Grasser, W. Gös, V. Sverdlov, B. Kaczer:
"The Universality of NBTI Relaxation and its Implications for Modeling and Characterization";
Talk: International Reliability Physics Symposium (IRPS), Phoenix; 2007-04-15 - 2007-04-19; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2007), ISBN: 1-4244-0919-5, 268 - 280. BibTeX

142. W. Grabinski, T. Grasser, G. Gildenblat, G.-J. Smit, M. Bucher, A. Aarts, A. Tajic, Y. S. Chauhan, A. Napieralski, T.A. Fjeldly, B. Iniguez, G. Iannaccone, M. Kayal, W. Posch, G. Wachutka, F. Prégaldiny, CH. Lallement, L. Lemaitre:
"MOS-AK: Open Compact Modeling Forum";
Talk: International Workshop on Compact Modeling (IWCM), Pacifico Yokohama, Japan; (invited) 2007-01-23 in "The 4th International Workshop on Compact Modeling", (2007), 1 - 11. BibTeX

141. M. Wagner, G. Span, S. Holzer, O. Triebl, T. Grasser:
"Power Output Improvement of SiGe Thermoelectric Generators";
Talk: Meeting of the Electrochemical Society (ECS), Cancun; 2006-10-29 - 2006-11-03; in "Meeting Abstracts 2006 Joint International Meeting", (2006), ISSN: 1091-8213, 1 page(s) . BibTeX

140. R. Heinzl, M. Spevak, P. Schwaha, T. Grasser, S. Selberherr:
"Performance Analysis for High-Precision Interconnect Simulation";
Talk: European Simulation and Modeling Conference (ESMC), Toulouse; 2006-10-23 - 2006-10-25; in "The 2006 European Simulation and Modelling Conference", (2006), ISBN: 9077381-30-9, 113 - 116. BibTeX

139. M. Spevak, R. Heinzl, P. Schwaha, T. Grasser, S. Selberherr:
"A Generic Discretization Library";
Talk: Annual ACM Conference on Object-Oriented Programming, Systems, Languages and Applications (OOPSLA), Portland; 2006-10-22 - 2006-10-26; in "OOPSLA Proceedings", (2006), ISSN: 1652-926x, 95 - 100. BibTeX

138. T. Grasser, W. Gös, B. Kaczer:
"Modeling of Dispersive Transport in the Context of Negative Bias Temperature Instability";
Talk: IEEE International Reliability Workshop (IIRW), S. Lake Tahoe; 2006-10-16 - 2006-10-19; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2006), ISBN: 1-4244-0297-2, 5 - 10. BibTeX

137. S. Holzer, M. Wagner, A. Sheikholeslami, M. Karner, G. Span, T. Grasser, S. Selberherr:
"An Extendable Multi-Purpose Simulation and Optimization Framework for Thermal Problems in TCAD Applications";
Talk: Workshop on Thermal Investigations of ICs and Systems (THERMINIC), Nice; 2006-09-27 - 2006-09-29; in "Collection of Papers Presented at the 12th International Workshop on Thermal Investigation of ICs and Systems", (2006), ISBN: 2-9161-8704-9, 239 - 244. BibTeX

136. O. Triebl, T. Grasser:
"Vector Discretization Schemes Based on Unstructured Neighbourhood Information";
Talk: International Semiconductor Conference CAS, Sinaia; 2006-09-27 - 2006-09-29; in "CAS 2006 Proceedings Vol. 2", (2006), ISBN: 1-4244-0109-7, 337 - 340. BibTeX

135. S. Dhar, E. Ungersböck, H. Kosina, T. Grasser, S. Selberherr:
"Analytical Modeling of Electron Mobility in Strained Germanium";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 2006-09-06 - 2006-09-08; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5, 39 - 42 doi:10.1109/SISPAD.2006.282833. BibTeX

134. T. Grasser, R. Entner, O. Triebl, H. Enichlmair:
"TCAD Modeling of Negative Bias Temperature Instability";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 2006-09-06 - 2006-09-08; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5, 330 - 333 doi:10.1109/SISPAD.2006.282902. BibTeX

133. H. Kosina, V. Sverdlov, T. Grasser:
"Wigner Monte Carlo Simulation: Particle Annihilation and Device Applications";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 2006-09-06 - 2006-09-08; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5, 357 - 360 doi:10.1109/SISPAD.2006.282908. BibTeX

132. M. Wagner, G. Span, S. Holzer, T. Grasser:
"Design Optimization of Large Area Si/SiGe Thermoelectric Generators";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 2006-09-06 - 2006-09-08; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5, 397 - 400 doi:10.1109/SISPAD.2006.282918. BibTeX

131. G. Span, M. Wagner, S. Holzer, T. Grasser:
"Thermoelectric Power Conversion using Generation of Electron-Hole Pairs in Large Area p-n Junctions";
Talk: International Conference on Thermoelectrics, Vienna; 2006-08-06 - 2006-08-10; in "International Conference on Thermoelectrics", (2006), 6, ISBN: 1-4244-0811-3, 23 - 28. BibTeX

130. S. Holzer, M. Wagner, L. Friembichler, E. Langer, T. Grasser, S. Selberherr:
"A Multi-Purpose Optimization Framework for TCAD Applications";
Talk: International Congress on Computational and Applied Mathematics (ICCAM), Leuven; 2006-07-10 - 2006-07-14; in "ICCAM 2006 Abstracts of Talks", (2006), 76. BibTeX

129. P. Schwaha, R. Heinzl, M. Spevak, T. Grasser:
"A Generic Approach to Scientific Computing";
Talk: International Congress on Computational and Applied Mathematics (ICCAM), Leuven; 2006-07-10 - 2006-07-14; in "ICCAM 2006 Abstracts of Talks", (2006), 137. BibTeX

128. M. Spevak, R. Heinzl, P. Schwaha, T. Grasser:
"Automatic Linearization using Functional Programming for Scientific Computing";
Talk: International Congress on Computational and Applied Mathematics (ICCAM), Leuven; 2006-07-10 - 2006-07-14; in "ICCAM 2006 Abstracts of Talks", (2006), 147. BibTeX

127. R. Heinzl, P. Schwaha, M. Spevak, T. Grasser:
"Performance Aspects of a DSEL for Scientific Computing with C++";
Talk: Workshop on Parallel Object-Oriented Scientific Computing (POOSC), Nantes; 2006-07-03 - 2006-07-07; in "Proceedings of the POOSC Conference", (2006), 37 - 41. BibTeX

126. S. Holzer, Ch. Hollauer, H. Ceric, M. Karner, T. Grasser, E. Langer, S. Selberherr:
"Three-Dimensional Transient Interconnect Analysis With Regard to Mechanical Stress";
Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2006-07-03 - 2006-07-07; in "Proceedings 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2006), ISBN: 1-4244-0206-9, 154 - 157. BibTeX

125. R. Entner, T. Grasser, H. Enichlmair, R. Minixhofer:
"Negative Bias Temperature Instability Modeling for High-Voltage Oxides at Different Stress Temperatures";
Talk: Workshop on Dielectrics in Microelectronics (WODIM), Catania; 2006-06-26 - 2006-06-28; in "WODIM 2006 14th Workshop on Dielectrics in Microelectronics Workshop Programme and Abstracts", (2006), 96 - 97. BibTeX

124. S. Holzer, A. Sheikholeslami, M. Karner, T. Grasser:
"Comparison of Deposition Models for TEOS CVD Process";
Talk: Workshop on Dielectrics in Microelectronics (WODIM), Catania; 2006-06-26 - 2006-06-28; in "WODIM 2006 14th Workshop on Dielectrics in Microelectronics Workshop Programme and Abstracts", (2006), 158 - 159. BibTeX

123. M. Karner, A. Gehring, M. Wagner, R. Entner, S. Holzer, W. Gös, M. Vasicek, T. Grasser, H. Kosina, S. Selberherr:
"VSP-A Gate Stack Analyzer";
Talk: Workshop on Dielectrics in Microelectronics (WODIM), Catania; 2006-06-26 - 2006-06-28; in "WODIM 2006 14th Workshop on Dielectrics in Microelectronics Workshop Program and Abstracts", (2006), 101 - 102. BibTeX

122. T. Grasser, S. Selberherr:
"Modeling of Negative Bias Temperature Instability";
Talk: Symposium Diagnostics & Yield: Advanced Silicon Devices and Technologies for ULSI ERA, Warszawa; (invited) 2006-06-25 - 2006-06-28; in "Abstracts 7th Symposium Diagnostics & Yield: Advanced Silicon Devices and Technologies for ULSI ERA", (2006), 1 - 2. BibTeX

121. R. Heinzl, M. Spevak, P. Schwaha, T. Grasser:
"A High Performance Generic Scientific Simulation Environment";
Talk: Workshop on State-of-the-Art in Scientific and Parallel Computing (PARA), Umea; 2006-06-18 - 2006-06-21; in "Proceedings of the PARA Conference", (2006), 61. BibTeX

120. P. Schwaha, R. Heinzl, M. Spevak, T. Grasser:
"Advanced Equation Processing for TCAD";
Talk: Workshop on State-of-the-Art in Scientific and Parallel Computing (PARA), Umea; 2006-06-18 - 2006-06-21; in "Proceedings of the PARA Conference", (2006), 64. BibTeX

119. M. Spevak, R. Heinzl, P. Schwaha, T. Grasser:
"A Computational Framework for Topological Operations";
Talk: Workshop on State-of-the-Art in Scientific and Parallel Computing (PARA), Umea; 2006-06-18 - 2006-06-21; in "Proceedings of the PARA Conference", (2006), 57. BibTeX

118. S. Dhar, E. Ungersböck, H. Kosina, T. Grasser, S. Selberherr:
"Electron Mobility Model for <110> Stressed Si Including Strain-Dependent Mass";
Poster: Silicon Nanoelectronics Workshop, Honolulu; 2006-06-11 - 2006-06-12; in "Abstracts IEEE 2006 Silicon Nanoelectronics Workshop", (2006), 153 - 154. BibTeX

117. R. Entner, T. Grasser, H. Enichlmair, R. Minixhofer:
"Influence of Interface and Oxide Traps on Negative Bias Temperature Instability";
Poster: Silicon Nanoelectronics Workshop, Honolulu; 2006-06-11 - 2006-06-12; in "Abstracts IEEE 2006 Silicon Nanoelectronics Workshop", (2006), 163 - 164. BibTeX

116. M. Karner, A. Gehring, S. Holzer, M. Pourfath, M. Wagner, H. Kosina, T. Grasser, S. Selberherr:
"VSP - A Multi-Purpose Schrödinger-Poisson Solver for TCAD Applications";
Poster: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 2006-05-25 - 2006-05-27; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1, 255 - 256. BibTeX

115. V. Sverdlov, T. Grasser, H. Kosina, S. Selberherr:
"Scattering and Space-Charge Effects in Wigner Monte Carlo Simulations of Single and Double Barrier Devices";
Talk: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 2006-05-25 - 2006-05-27; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1, 29 - 30. BibTeX

114. M. Wagner, T. Grasser, M. Karner, H. Kosina:
"Quantum Correction for DG MOSFETs";
Poster: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 2006-05-25 - 2006-05-27; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1, 87 - 88. BibTeX

113. R. Heinzl, M. Spevak, P. Schwaha, T. Grasser:
"High Performance Process and Device Simulation with a Generic Environment";
Talk: Iranian Conference on Electrical Engineering (ICEE), Tehran; 2006-05-16 - 2006-05-18; in "Proceedings of the 14th Iranian Conference on Electrical Engineering ICEE 2006", (2006), 4 page(s) . BibTeX

112. A. Sheikholeslami, R. Heinzl, S. Holzer, C. Heitzinger, M. Spevak, M. Leicht, O. Häberlen, J. Fugger, F. Badrieh, F. Parhami, H. Puchner, T. Grasser, S. Selberherr:
"Applications of Two- and Three-Dimensional General Topography Simulator in Semiconductor Manufacturing Processes";
Talk: Iranian Conference on Electrical Engineering (ICEE), Tehran; 2006-05-16 - 2006-05-18; in "Proceedings of the 14th Iranian Conference on Electrical Engineering ICEE 2006", (2006), 4 page(s) . BibTeX

111. S. Dhar, H. Kosina, G. Karlowatz, E. Ungersböck, T. Grasser, S. Selberherr:
"A Tensorial High-Field Electron Mobility Model for Strained Silicon";
Poster: International SiGe Technology and Device Meeting (ISTDM), Princeton; 2006-05-15 - 2006-05-17; in "2006 International SiGe Technology and Device Meeting Conference Digest", (2006), ISBN: 1-4244-0461-4, 72 - 73. BibTeX

110. M. Wagner, G. Span, T. Grasser:
"Thermoelectric Power Generation Using Large Area Si/SiGe pn-Junctions With Varying Ge-Content";
Talk: International SiGe Technology and Device Meeting (ISTDM), Princeton; 2006-05-15 - 2006-05-17; in "2006 International SiGe Technology and Device Meeting Conference Digest", (2006), ISBN: 1-4244-0461-4, 216 - 217. BibTeX

109. R. Heinzl, M. Spevak, P. Schwaha, T. Grasser:
"A Generic Scientific Simulation Environment for Multidimensional Simulation in the Area of TCAD";
Poster: The Nanotechnology Conference and Trade Show, Boston; 2006-05-07 - 2006-05-11; in "NSTI Nanotech Proceedings", (2006), ISBN: 0-9767985-8-1, 526 - 529. BibTeX

108. R. Heinzl, M. Spevak, P. Schwaha, T. Grasser:
"Multidimensional and Multitopological TCAD with a Generic Scientific Simulation Environment";
Talk: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Playa del Carmen; 2006-04-26 - 2006-04-28; in "Proceedings International Caribbean Conference on Devices, Circuits and Systems", (2006), ISBN: 1-4244-0042-2, 173 - 176. BibTeX

107. P. Schwaha, R. Heinzl, W. Brezna, J. Smoliner, H. Enichlmair, R. Minixhofer, T. Grasser:
"Leakage Current Analysis of a Real World Silicon-Silicon Dioxide Capacitance";
Talk: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Playa del Carmen; 2006-04-26 - 2006-04-28; in "Proceedings International Caribbean Conference on Devices, Circuits and Systems", (2006), ISBN: 1-4244-0042-2, 365 - 370. BibTeX

106. R. Entner, T. Grasser, H. Enichlmair, R. Minixhofer:
"Investigation of NBTI Recovery During Measurement";
Talk: Materials Research Society Spring Meeting (MRS), San Francisco; 2006-04-17 - 2006-04-21; in "San Francisco 2006 MRS Meeting Abstracts", (2006), 110 - 111. BibTeX

105. M. Karner, M. Wagner, T. Grasser, H. Kosina:
"A Physically Based Quantum Correction Model for DG MOSFETs";
Talk: Materials Research Society Spring Meeting (MRS), San Francisco; 2006-04-17 - 2006-04-21; in "San Francisco 2006 MRS Meeting Abstracts", (2006), 104 - 105. BibTeX

104. M. Spevak, R. Heinzl, P. Schwaha, T. Grasser:
"Process and Device Simulation With a Generic Scientific Simulation Environment";
Talk: International Conference on Microelectronics (MIEL), Beograd; 2006-04-14 - 2006-04-17; in "Proceedings International Conference on Microelectronics (MIEL)", (2006), ISBN: 1-4244-0116-x, 475 - 478. BibTeX

103. R. Heinzl, P. Schwaha, M. Spevak, T. Grasser:
"Concepts for High Performance Generic Scientific Computing";
Talk: International Symposium on Mathematical Modeling (MATHMOD), Wien; 2006-02-08 - 2006-02-10; in "5th Mathmod Vienna Proceedings", (2006), ISBN: 3-901608-30-3, 4-1 - 4-9. BibTeX

102. M. Spevak, R. Heinzl, P. Schwaha, T. Grasser:
"Simulation of Microelectronic Structures Using A Posteriori Error Estimation and Mesh Optimization";
Talk: International Symposium on Mathematical Modeling (MATHMOD), Wien; 2006-02-08 - 2006-02-10; in "5th Mathmod Vienna Proceedings", (2006), ISBN: 3-901608-30-3, 5-1 - 5-8. BibTeX

101. M. Wagner, M. Karner, T. Grasser:
"Quantum Correction Models for Modern Semiconductor Devices";
Poster: International Workshop on the Physics of Semiconductor Devices (IWPSD), New Dehli; 2005-12-13 - 2005-12-17; in "Proceedings of the XIII International Workshop on Semiconductor Devices", (2005), Vol. 1, 458 - 461. BibTeX

100. R. Heinzl, P. Schwaha, M. Spevak, T. Grasser:
"Adaptive Mesh Generation for TCAD with Guaranteed Error Bounds";
Talk: European Simulation and Modeling Conference (ESMC), Porto; 2005-10-26 - 2005-10-28; in "The 2005 European Simulation and Modelling Conference Proceedings", (2005), ISBN: 90-77381-22-8, 425 - 429. BibTeX

99. E. Al-Ani, R. Heinzl, P. Schwaha, T. Grasser, S. Selberherr:
"Three-Dimensional State-Of-The-Art Topography Simulation";
Talk: European Simulation and Modeling Conference (ESMC), Porto; 2005-10-24 - 2005-10-26; in "The 2005 European Simulation and Modelling Conference Proceedings", (2005), ISBN: 90-77381-22-8, 430 - 432. BibTeX

98. P. Schwaha, R. Heinzl, W. Brezna, J. Smoliner, H. Enichlmair, R. Minixhofer, T. Grasser:
"Fully Three-Dimensional Analysis of Leakage Current in Non-Planar Oxides";
Talk: European Simulation and Modeling Conference (ESMC), Porto; 2005-10-24 - 2005-10-26; in "The 2005 European Simulation and Modelling Conference Proceedings", (2005), ISBN: 90-77381-22-8, 469 - 473. BibTeX

97. M. Spevak, T. Grasser:
"Discretisation Schemes For Macroscopic Transport Equations on Non-Cartesian Coordinate Systems";
Talk: European Simulation and Modeling Conference (ESMC), Porto; 2005-10-24 - 2005-10-26; in "The 2005 European Simulation and Modelling Conference Proceedings", (2005), ISBN: 90-77381-22-8, 474 - 478. BibTeX

96. R. Entner, A. Gehring, H. Kosina, T. Grasser, S. Selberherr:
"Modeling of Tunneling Currents for Highly Degraded CMOS Devices";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 2005-09-01 - 2005-09-03; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5, 219 - 222 doi:10.1109/SISPAD.2005.201512. BibTeX

95. R. Heinzl, T. Grasser:
"Generalized Comprehensive Approach for Robust Three-Dimensional Mesh Generation for TCAD";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 2005-09-01 - 2005-09-03; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5, 211 - 214 doi:10.1109/SISPAD.2005.201510. BibTeX

94. P. Schwaha, R. Heinzl, M. Spevak, T. Grasser:
"Coupling Three-Dimensional Mesh Adaptation with an A Posteriori Error Estimator";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 2005-09-01 - 2005-09-03; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5, 235 - 238 doi:10.1109/SISPAD.2005.201516. BibTeX

93. A. Sheikholeslami, F. Parhami, R. Heinzl, E. Al-Ani, C. Heitzinger, F. Badrieh, H. Puchner, T. Grasser, S. Selberherr:
"Applications of Three-Dimensional Topography Simulation in the Design of Interconnect Lines";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 2005-09-01 - 2005-09-03; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5, 187 - 190 doi:10.1109/SISPAD.2005.201504. BibTeX

92. G. Span, M. Wagner, T. Grasser:
"Thermoelectric Power Generation Using Large Area pn-Junctions";
Talk: European Conference on Thermoelectrics (ECT), Nancy; 2005-09-01 - 2005-09-02; in "The 3rd European Conference on Thermoelectrics Proceedings ECT2005", (2005), 72 - 75. BibTeX

91. R. Heinzl, M. Spevak, P. Schwaha, T. Grasser:
"A Novel Technique for Coupling Three Dimensional Mesh Adaption With An A Posteriori Error Estimator";
Talk: PhD Research in Microelectronics and Electronics (PRIME), Lausanne; 2005-07-25 - 2005-07-28; in "2005 PhD Research in Microelectronics and Electronics", (2005), Vol. 1, ISBN: 0-7803-9345-7, 175 - 178. BibTeX

90. A. Sheikholeslami, S. Holzer, C. Heitzinger, M. Leicht, O. Häberlen, J. Fugger, T. Grasser, S. Selberherr:
"Inverse Modeling of Oxid Deposition Using Measurements of a TEOS CVD Process";
Talk: PhD Research in Microelectronics and Electronics (PRIME), Lausanne; 2005-07-25 - 2005-07-28; in "2005 PhD Research in Microelectronics and Electronics", (2005), Vol. 2, ISBN: 0-7803-9345-7, 279 - 282. BibTeX

89. H. Ceric, V. Deshpande, Ch. Hollauer, S. Holzer, T. Grasser, S. Selberherr:
"Comprehensive Analysis of Vacancy Dynamics Due to Electromigration";
Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2005-06-27 - 2005-07-01; in "Proceedings of the 12th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2005), ISBN: 0-7803-9301-5, 100 - 103. BibTeX

88. Ch. Hollauer, S. Holzer, H. Ceric, S. Wagner, T. Grasser, S. Selberherr:
"Investigation of Thermo-Mechanical Stress in Modern Interconnect Layouts";
Talk: International Congress on Thermal Stresses (TS), Wien; 2005-05-26 - 2005-05-29; in "Proceedings of The Sixth International Congress on Thermal Stresses", (2005), Vol. 2, ISBN: 3-901167-12-9, 637 - 640. BibTeX

87. R. Entner, A. Gehring, H. Kosina, T. Grasser, S. Selberherr:
"Impact of Multi-Trap Assisted Tunneling on Gate Leakage of CMOS Memory Devices";
Talk: The Nanotechnology Conference and Trade Show, Anaheim; 2005-05-08 - 2005-05-12; in "NSTI Nanotech Technical Proceedings", (2005), Vol. 3 (CDROM ISBN 0-9767985-4-9), ISBN: 0-9767985-2-2, 45 - 48. BibTeX

86. S. Holzer, Ch. Hollauer, H. Ceric, S. Wagner, R. Entner, E. Langer, T. Grasser, S. Selberherr:
"Three-Dimensional Transient Electro-Thermal Interconnect Simulation for Stress and Electromigration Analysis";
Poster: The Nanotechnology Conference and Trade Show, Anaheim; 2005-05-08 - 2005-05-12; in "NSTI Nanotech Technical Proceedings", (2005), Vol. 3 (CDROM ISBN: 0-9767985-4-9), ISBN: 0-9767985-2-2, 620 - 623. BibTeX

85. C. Jungemann, T. Grasser, B. Neinhüs, B. Meinerzhagen:
"Failure of Macroscopic Transport Models in Nanoscale Devices near Equilibrium";
Talk: The Nanotechnology Conference and Trade Show, Anaheim; 2005-05-08 - 2005-05-12; in "NSTI Nanotech Technical Proceedings", (2005), Vol. 3 (CDROM ISBN 0-9767985-4-9), ISBN: 0-9767985-2-2, 25 - 28. BibTeX

84. A. Sheikholeslami, E. Al-Ani, R. Heinzl, C. Heitzinger, F. Parhami, F. Badrieh, H. Puchner, T. Grasser, S. Selberherr:
"Level Set Method Based General Topography Simulator and its Application in Interconnect Processes";
Poster: International Conference on Ultimate Integration of Silicon (ULIS), Bologna; 2005-04-07 - 2005-04-08; in "ULIS 2005 6th International Conference on Ultimate Integration of Silicon", (2005), ISBN: 8890084707, 139 - 142. BibTeX

83. S. Wagner, T. Grasser, S. Selberherr:
"Physical Modeling of Semiconductor Devices for Microwave Applications";
Talk: Asia Pacific Microwave Conference (APMC), New Delhi; (invited) 2004-12-15 - 2004-12-18; in "Asia Pacific Microwave Conference 2004. Abstracts and Proceedings (CDROM)", (2004), ISBN: 81-7764-722-9, 4 page(s) . BibTeX

82. W. Wessner, S. Wagner, T. Grasser, S. Selberherr:
"Meshing Aspects on Three-Dimensional Fin-Fet Device Simulations";
Talk: Asia Pacific Microwave Conference (APMC), New Delhi; 2004-12-15 - 2004-12-18; in "Asia Pacific Microwave Conference 2004, Abstracts and Proceedings (CDROM)", (2004), ISBN: 81-7764-722-9, 4 page(s) . BibTeX

81. T. Grasser, R. Kosik, C. Jungemann, H. Kosina, B. Meinerzhagen, S. Selberherr:
"A Non-Parabolic Six Moments Model for the Simulation of Sub-100 nm Devices";
Talk: International Workshop on Computational Electronics (IWCE), West Lafayette, IN, USA; 2004-10-24 - 2004-10-27; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2004), ISBN: 0-7803-8649-3, 36 - 37 doi:10.1109/IWCE.2004.1407308. BibTeX

80. T. Ayalew, T. Grasser, H. Kosina, S. Selberherr:
"Accurate Modeling of Lattice Site-Dependent Ionization Level of Impurities in α-SiC Devices";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 2004-09-02 - 2004-09-04; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2004), ISBN: 3211224688, 295 - 298 doi:10.1007/978-3-7091-0624-2_69. BibTeX

79. H. Ceric, R. Sabelka, S. Holzer, W. Wessner, S. Wagner, T. Grasser, S. Selberherr:
"The Evolution of the Resistance and Current Density During Electromigration";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 2004-09-02 - 2004-09-04; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2004), ISBN: 3211224688, 331 - 334 doi:10.1007/978-3-7091-0624-2_78. BibTeX

78. T. Grasser, C. Jungemann, H. Kosina, B. Meinerzhagen, S. Selberherr:
"Advanced Transport Models for Sub-Micrometer Devices";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; (invited) 2004-09-02 - 2004-09-04; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2004), ISBN: 3211224688, 1 - 8 doi:10.1007/978-3-7091-0624-2_1. BibTeX

77. T. Grasser, H. Kosina, S. Selberherr:
"On the Validity of the Relaxation Time Approximation for Macroscopic Transport Models";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 2004-09-02 - 2004-09-04; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2004), ISBN: 3211224688, 109 - 112 doi:10.1007/978-3-7091-0624-2_26. BibTeX

76. S. Wagner, T. Grasser, S. Selberherr:
"Performance Evaluation of Linear Solvers Employed for Semiconductor Device Simulation";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 2004-09-02 - 2004-09-04; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2004), ISBN: 3211224688, 351 - 354 doi:10.1007/978-3-7091-0624-2_83. BibTeX

75. T. Ayalew, T. Grasser, H. Kosina, S. Selberherr:
"Accurate Modeling of Lattice Site-Dependent Incomplete Ionization in α-SiC Devices";
Poster: European Conference on Silicon Carbide and Related Materials (ECSCRM), Bologna; 2004-08-31 - 2004-09-04; in "5th European Conference on Silicon Carbide and Related Materials Book of Abstracts", (2004), 92 - 93. BibTeX

74. T. Ayalew, S. Kim, T. Grasser, S. Selberherr:
"SiC Power Rectifier With Improved Switching Performance "Numerical Analysis of Merged PiN Schottky Diode"";
Poster: European Conference on Silicon Carbide and Related Materials (ECSCRM), Bologna; 2004-08-31 - 2004-09-04; in "5th European Conference on Silicon Carbide and Related Materials Book of Abstracts", (2004), 476 - 477. BibTeX

73. T. Ayalew, S. Wagner, T. Grasser, S. Selberherr:
"Numerical Simulation of Microwave MESFETs in 4H-SiC Fabricated Using Epitaxial Layers on Semi-Insulating Substrates";
Poster: European Conference on Silicon Carbide and Related Materials (ECSCRM), Bologna; 2004-08-31 - 2004-09-04; in "5th European Conference on Silicon Carbide and Related Materials Book of Abstracts", (2004), 76 - 77. BibTeX

72. S.-C. Kim, W. Bahng, N.-K. Kim, T. Ayalew, T. Grasser, S. Selberherr:
"Numerical Simulation and Optimization for 900V 4H-SiC DiMOSFET fabrication";
Poster: European Conference on Silicon Carbide and Related Materials (ECSCRM), Bologna; 2004-08-31 - 2004-09-04; in "5th European Conference on Silicon Carbide and Related Materials Book of Abstracts", (2004), 492 - 493. BibTeX

71. S. Wagner, T. Grasser, C. Fischer, S. Selberherr:
"Concepts and Implementation of an Advanced Equation Assembly Module";
Talk: World Multiconference on Systemics, Cybernetics and Informatics (SCI), Orlando; 2004-07-18 - 2004-07-21; in "The 8th World Multi-Conference on Systemics, Cybernetics and Informatics", (2004), ISBN: 980-6560-13-2, 150 - 155. BibTeX

70. S. Wagner, T. Grasser, S. Selberherr:
"Benchmarking Linear Solvers with Semiconductor Simulation Examples";
Talk: International Conference on Scientific and Engineering Computation (ICSEC), Singapore; 2004-06-30 - 2004-07-02; in "Proc. Intl. Conf. on Scientific & Engineering Computation (ICSEC)", (2004), 4 page(s) . BibTeX

69. S. Wagner, T. Grasser, S. Selberherr:
"Mixed-Mode Device and Circuit Simulation";
Talk: International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES), Szczecin; (invited) 2004-06-24 - 2004-06-26; in "Proceedings of the 11th International Conference on Mixed Design of Integrated Circuits and Systems MIXDES", (2004), ISBN: 83-919289-7-7, 36 - 41. BibTeX

68. A. Sheikholeslami, C. Heitzinger, T. Grasser, S. Selberherr:
"Three-Dimensional Topography Simulation for Deposition and Etching Processes Using a Level Set Method";
Talk: International Conference on Microelectronics (MIEL), Nis; 2004-05-16 - 2004-05-19; in "2004 International Conference on Microelectronics", (2004), ISBN: 0-7803-8166-1, 241 - 244. BibTeX

67. R. Entner, A. Gehring, T. Grasser, S. Selberherr:
"A Comparison of Quantum Correction Models for the Three-Dimensional Simulation of FinFET Structures";
Poster: International Spring Seminar on Electronics Technology (ISSE), Sofia; 2004-05-13 - 2004-05-16; in "Proceedings IEEE International Spring Seminar on Electronics Technology 27th ISSE 2004", (2004), 1, ISBN: 0-7803-8422-9, 114 - 117. BibTeX

66. R. Kosik, T. Grasser, R. Entner, K. Dragosits:
"On the Highest Order Moment Closure Problem";
Poster: International Spring Seminar on Electronics Technology (ISSE), Sofia; 2004-05-13 - 2004-05-16; in "Proceedings IEEE International Spring Seminar on Electronics Technology 27th ISSE 2004", (2004), 1, ISBN: 0-7803-8422-9, 118 - 120. BibTeX

65. S. Holzer, A. Sheikholeslami, S. Wagner, C. Heitzinger, T. Grasser, S. Selberherr:
"Optimization and Inverse Modeling for TCAD Applications";
Talk: Symposium on Nano Device Technology (SNDT), Hsinchu; 2004-05-12 - 2004-05-13; in "Proceedings of the Symposium on Nano Device Technology", (2004), 113 - 116. BibTeX

64. S. Wagner, V. Palankovski, R. Quay, T. Grasser, S. Selberherr:
"Numerical Simulation of High-Speed High-Breakdown Indium Phosphide HBTs";
Talk: International Workshop on the Physics of Semiconductor Devices (IWPSD), Madras; 2003-12-16 - 2003-12-20; in "Proceedings of the Twelfth International Workshop on the Physics of Semiconductor Devices", (2003), ISBN: 81-7319-567-6, 836 - 838. BibTeX

63. T. Grasser:
"Closure Relations for Macroscopic Transport Models";
Talk: International Semiconductor Device Research Symposium (ISDRS), Washington; (invited) 2003-12-10 - 2003-12-12; in "2003 International Semiconductor Device Research Symposium", (2003), ISBN: 0-7803-8139-4, 504 - 505. BibTeX

62. S. Wagner, T. Grasser, C. Fischer, S. Selberherr:
"A Generally Applicable Approach for Advanced Equation Assembling";
Talk: International Conference on Software Engineering and Applications (SEA), Marina del Rey; 2003-11-03 - 2003-11-05; in "Proceedings of the 7th IASTED International Conference on Software Engineering and Applications (SEA)", (2003), ISBN: 088-9863-94-6, 494 - 499. BibTeX

61. S. Wagner, T. Grasser, C. Fischer, S. Selberherr:
"Advanced Equation Assembling Techniques for Numerical Simulators";
Talk: European Simulation and Modeling Conference (ESMC), Naples; 2003-10-27 - 2003-10-29; in "The 2003 European Simulation and Modelling Conference", (2003), ISBN: 90-77381-04-x, 390 - 394. BibTeX

60. S. Wagner, T. Grasser, C. Fischer, S. Selberherr:
"A Simulator Module for Advanced Equation Assembling";
Talk: European Simulation Symposium (ESS), Delft; 2003-10-26 - 2003-10-29; in "Simulation in Industry, 15th European Simulation Symposium", (2003), ISBN: 3-936150-28-1, 55 - 64. BibTeX

59. J. Cervenka, A. Hössinger, R. Minixhofer, T. Grasser, S. Selberherr:
"Dreidimensionale Modellierung Elektronischer Bauteile";
Poster: Informationstagung Mikroelektronik (ME), Wien; 2003-10-01 - 2003-10-02; in "Beiträge der Informationstagung Mikroelektronik 2003", (2003), ISBN: 3-85133-030-7, 377 - 382. BibTeX

58. S. Wagner, V. Palankovski, G. Röhrer, T. Grasser, S. Selberherr:
"Numerische Berechnung von Silizium-Germanium Heterostruktur-Bipolartransistoren";
Poster: Informationstagung Mikroelektronik (ME), Wien; 2003-10-01 - 2003-10-02; in "Beiträge der Informationstagung Mikroelektronik 2003", (2003), ISBN: 3-85133-030-7, 383 - 388. BibTeX

57. S. Holzer, R. Minixhofer, C. Heitzinger, J. Fellner, T. Grasser, S. Selberherr:
"Extraction of Material Parameters Based on Inverse Modeling of Three-Dimensional Interconnect Structures";
Talk: Workshop on Thermal Investigations of ICs and Systems (THERMINIC), Aix-en-Provence; 2003-09-24 - 2003-09-26; in "International Workshop on Thermal Investigations of ICs and Systems", (2003), ISBN: 2-848-130202, 263 - 268. BibTeX

56. T. Ayalew, J.M. Park, A. Gehring, T. Grasser, S. Selberherr:
"Silicon Carbide Accumulation-Mode Laterally Diffused MOSFET";
Poster: European Solid-State Device Research Conference (ESSDERC), Estoril; 2003-09-16 - 2003-09-18; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2003), ISBN: 0-7803-7999-3, 581 - 584. BibTeX

55. R. Minixhofer, S. Holzer, C. Heitzinger, J. Fellner, T. Grasser, S. Selberherr:
"Optimization of Electrothermal Material Parameters Using Inverse Modeling";
Talk: European Solid-State Device Research Conference (ESSDERC), Estoril; 2003-09-16 - 2003-09-18; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2003), ISBN: 0-7803-7999-3, 363 - 366. BibTeX

54. T. Ayalew, J.M. Park, A. Gehring, T. Grasser, S. Selberherr:
"Modeling and Simulation of SiC MOSFETs";
Talk: International Conference on Applied Modelling and Simulation, Marbella; 2003-09-03 - 2003-09-05; in "Proceedings of the Twelfth IASTED International Conference on Applied Simulation and Modelling", (2003), ISBN: 0-88986-384-9, 552 - 556. BibTeX

53. T. Grasser, H. Kosina, S. Selberherr:
"Reformulation of Macroscopic Transport Models Based on the Moments of the Scattering Integral";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 2003-09-03 - 2003-09-05; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2003), ISBN: 0-7803-7826-1, 63 - 66 doi:10.1109/SISPAD.2003.1233638. BibTeX

52. J.M. Park, T. Grasser, S. Selberherr:
"High-Voltage Super-Junction SOI-LDMOSFETs with Reduced Drift Length";
Talk: Meeting of the Electrochemical Society (ECS), Paris; 2003-04-26 - 2003-05-02; in "203rd ECS Meeting", (2003), ISBN: 1-56677-347-4, 273 - 282. BibTeX

51. A. Gehring, H. Kosina, T. Grasser, S. Selberherr:
"Consistent Comparison of Tunneling Models for Device Simulation";
Poster: Workshop on Ultimate Integration of Silicon (ULIS), Udine; 2003-03-20 - 2003-03-21; in "4th European Workshop on Ultimate Integration of Silicon", (2003), ISBN: 88-900984-0-6, 131 - 134. BibTeX

50. T. Grasser, H. Kosina, S. Selberherr:
"Rigorous Modeling of Mobilities and Relaxation Times Using Six Moments of the Distribution Function";
Talk: Workshop on Ultimate Integration of Silicon (ULIS), Udine; 2003-03-20 - 2003-03-21; in "4th European Workshop on Ultimate Integration of Silicon", (2003), ISBN: 88-900984-0-6, 105 - 108. BibTeX

49. A. Gehring, T. Grasser, H. Kosina, S. Selberherr:
"An Energy Transport Gate Current Model Based on a Non-Maxwellian Energy Distribution";
Talk: International Conference on Modeling and Simulation of Microsystems (MSM), San Francisco; 2003-02-23 - 2003-02-27; in "Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show", (2003), ISBN: 0-9728422-1-7, 48 - 51. BibTeX

48. V. Palankovski, G. Röhrer, T. Grasser, S. Smirnov, H. Kosina, S. Selberherr:
"Rigorous Modeling Approach to Numerical Simulation of SiGe-HBTs";
Poster: International SiGe Technology and Device Meeting (ISTDM), Nagoya; 2003-01-15 - 2003-01-17; in "First International SiGe Technology and Device Meeting", (2003), 97 - 98. BibTeX

47. S. Wagner, V. Palankovski, T. Grasser, G. Röhrer, S. Selberherr:
"A Direct Extraction Feature for Scattering Parameters of SiGe-HBTs";
Talk: International SiGe Technology and Device Meeting (ISTDM), Nagoya; 2003-01-15 - 2003-01-17; in "First International SiGe Technology and Device Meeting", (2003), 83 - 84. BibTeX

46. S. Wagner, V. Palankovski, T. Grasser, R. Schultheis, S. Selberherr:
"Small-Signal Analysis and Direct S-Parameter Extraction";
Talk: International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO), Manchester; 2002-11-18 - 2002-11-19; in "The 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications", (2002), ISBN: 0-7803-7530-0, 50 - 55 doi:10.1109/EDMO.2002.1174929. BibTeX

45. R. Klima, T. Grasser, S. Selberherr:
"Controlling Scheme of the Device Simulator MINIMOS-NT";
Talk: European Simulation Symposium (ESS), Dresden; 2002-10-23 - 2002-10-26; in "Proceedings European Simulation Symposium", (2002), ISBN: 3-936150-22-2, 80 - 84. BibTeX

44. V. Palankovski, S. Wagner, T. Grasser, R. Schultheis, S. Selberherr:
"Direct S-Parameter Extraction by Physical Two-Dimensional Device AC-Simulation";
Poster: International Symposium on Compound Semiconductors (ISCS), Lausanne; 2002-10-07 - 2002-10-10; in "Proceedings of the Intl. Symposium on Compound Semiconductors", (2002), ISBN: 0-7503-0942-3, 303 - 306. BibTeX

43. R. Klima, T. Grasser, S. Selberherr:
"The Control System of the Device Simulator MINIMOS-NT";
Talk: International Conference on Nanoelectronics and Electromagnetic Compatibility, Skiathos; 2002-09-25 - 2002-09-28; in "Advances in Simulation, Systems Theory, and Systems Engineering", (2002), ISBN: 960-8052-70-x, 281 - 284. BibTeX

42. A. Gehring, T. Grasser, H. Kosina, S. Selberherr:
"A New Gate Current Model Accounting for a Non-Maxwellian Electron Energy Distribution Function";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 2002-09-04 - 2002-09-06; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5, 235 - 238 doi:10.1109/SISPAD.2002.1034560. BibTeX

41. M. Gritsch, H. Kosina, T. Grasser, S. Selberherr:
"Simulation of a "Well Tempered" SOI MOSFET using an Enhanced Hydrodynamic Transport Model";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 2002-09-04 - 2002-09-06; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5, 195 - 198 doi:10.1109/SISPAD.2002.1034550. BibTeX

40. T. Grasser, A. Gehring, S. Selberherr:
"Macroscopic Transport Models for Microelectronics Devices";
Talk: World Multiconference on Systemics, Cybernetics and Informatics (SCI), Orlando; (invited) 2002-07-14 - 2002-07-18; in "The 6th World Multiconference on Systemics, Cybernetics and Informatics", (2002), ISBN: 980-07-8150-1, 223 - 228. BibTeX

39. A. Gehring, T. Grasser, S. Selberherr:
"Non-Parabolicity and Non-Maxwellian Effects on Gate Oxide Tunneling";
Talk: International Conference on Modeling and Simulation of Microsystems (MSM), San Juan; 2002-04-21 - 2002-04-25; in "Technical Proceedings of the Fifth International Conference on Modeling and Simulation of Microsystems", (2002), ISBN: 0-9708275-7-1, 560 - 563. BibTeX

38. T. Grasser, H. Kosina, C. Heitzinger, S. Selberherr:
"An Impact Ionization Model Including an Explicit Cold Carrier Population";
Talk: International Conference on Modeling and Simulation of Microsystems (MSM), San Juan; 2002-04-21 - 2002-04-25; in "Technical Proceedings of the Fifth International Conference on Modeling and Simulation of Microsystems", (2002), ISBN: 0-9708275-7-1, 572 - 575. BibTeX

37. M. Gritsch, H. Kosina, T. Grasser, S. Selberherr, T. Linton, S. Singh, S. Yu, M. Giles:
"The Failure of the Hydrodynamic Transport Model for Simulation of Partially Depleted SOI MOSFETs and its Revision";
Talk: International Conference on Modeling and Simulation of Microsystems (MSM), San Juan; 2002-04-21 - 2002-04-25; in "Technical Proceedings of the Fifth International Conference on Modeling and Simulation of Microsystems", (2002), ISBN: 0-9708275-7-1, 544 - 547. BibTeX

36. T. Grasser, A. Gehring, S. Selberherr:
"Recent Advances in Transport Modeling for Miniaturized CMOS Devices";
Talk: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Aruba; (invited) 2002-04-17 - 2002-04-19; in "Proceedings of the ICCDCS 2002", (2002), D027, ISBN: 0-7803-7380-4, 1 - 8. BibTeX

35. T. Grasser, S. Selberherr:
"Limitations of Hydrodynamic and Energy-Transport Models";
Talk: V. Kumar, P.K. Basu (ed); International Workshop on Processes of Semiconductor Devices, Delhi; (invited) 2001-12-11 - 2001-12-15; in "Physics of Semiconductor Devices", (2001), ISBN: 81-7764-223-5, 584 - 591. BibTeX

34. M. Gritsch, H. Kosina, T. Grasser, S. Selberherr:
"Simulation of Partially Depleted SOI MOSFETs using an Improved Hydrodynamic Transport Model";
Talk: V. Kumar, P.K. Basu (ed); International Workshop on Processes of Semiconductor Devices, Delhi; 2001-12-11 - 2001-12-15; in "Physics of Semiconductor Devices", (2001), ISBN: 81-7764-223-5, 664 - 667. BibTeX

33. A. Gehring, T. Grasser, S. Selberherr:
"Design Optimization of Multi-Barrier Tunneling Devices Using the Transfer Matrix Method";
Poster: International Semiconductor Device Research Symposium (ISDRS), Washington; 2001-12-05 - 2001-12-07; in "2001 International Semiconductor Device Research Symposium", (2001), 260 - 263. BibTeX

32. J.M. Park, T. Grasser, H. Kosina, S. Selberherr:
"Numerical Study of Partial-SOI LDMOSFET Power Devices";
Poster: International Semiconductor Device Research Symposium (ISDRS), Washington; 2001-12-05 - 2001-12-07; in "2001 International Semiconductor Device Research Symposium", (2001), 114 - 117. BibTeX

31. V. Palankovski, G. Röhrer, E. Wachmann, J. Kraft, B. Löffler, J. Cervenka, R. Quay, T. Grasser, S. Selberherr:
"Optimization of High-Speed SiGe HBTs";
Talk: International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO), Wien; 2001-11-15 - 2001-11-16; in "Proceedings Intl. Symposium on Electron Devices for Microwave and Optoelectronic Applications", (2001), ISBN: 0-7803-7049-x, 187 - 191 doi:10.1109/EDMO.2001.974305. BibTeX

30. V. Palankovski, N. Belova, T. Grasser, H. Puchner, S. Aronowitz, S. Selberherr:
"Reliable Prediction of Deep Sub-Quartermicron CMOS Technology Performance";
Talk: IEEE Conference on Nanotechnology (NANO), Maui; 2001-10-28 - 2001-10-30; in "Proceedings of the IEEE Conference on Nanotechnology (NANO)", (2001), ISBN: 0-7803-7215-8, 201 - 206 doi:10.1109/NANO.2001.966419. BibTeX

29. H. Kosina, M. Gritsch, T. Grasser, T. Linton, S. Yu, M. Giles, S. Selberherr:
"An Improved Energy Transport Model Suitable for Simulation of Partially Depleted SOI MOSFETs";
Poster: International Workshop on Computational Electronics (IWCE), Urbana-Champaign, IL, USA; 2001-09-15 - 2001-09-18; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2001), 67. BibTeX

28. T. Grasser, H. Kosina, M. Gritsch, S. Selberherr, H. Puchner, S. Aronowitz:
"Accurate Simulation of Substrate Currents by Accounting for the Hot Electron Tail Population";
Talk: European Solid-State Device Research Conference (ESSDERC), Nürnberg; 2001-09-11 - 2001-09-13; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2001), ISBN: 2-914601-01-8, 215 - 218. BibTeX

27. A. Gehring, C. Heitzinger, T. Grasser, S. Selberherr:
"TCAD Analysis of Gain Cell Retention Time for SRAM Applications";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 2001-09-05 - 2001-09-07; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6, 416 - 419 doi:10.1007/978-3-7091-6244-6_96. BibTeX

26. T. Grasser, H. Kosina, S. Selberherr:
"An Impact Ionization Model Including Non-Maxwellian and Non-Parabolicity Effects";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 2001-09-05 - 2001-09-07; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6, 46 - 49 doi:10.1007/978-3-7091-6244-6_10. BibTeX

25. T. Grasser, H. Kosina, S. Selberherr:
"Investigation of Spurious Velocity Overshoot Using Monte Carlo Data";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 2001-09-05 - 2001-09-07; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6, 54 - 57 doi:10.1007/978-3-7091-6244-6_12. BibTeX

24. M. Nedjalkov, T. Grasser, H. Kosina, S. Selberherr:
"Boundary Condition Models for Terminal Current Fluctuations";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 2001-09-05 - 2001-09-07; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6, 152 - 155 doi:10.1007/978-3-7091-6244-6_34. BibTeX

23. V. Palankovski, N. Belova, T. Grasser, H. Puchner, S. Aronowitz, S. Selberherr:
"A Methodology for Deep Sub-Quartermicron CMOS Technology Characterization";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 2001-09-05 - 2001-09-07; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6, 428 - 431 doi:10.1007/978-3-7091-6244-6_99. BibTeX

22. R. Klima, T. Grasser, S. Selberherr:
"Controlling TCAD Applications with an Object-Oriented Dynamic Database";
Talk: European Simulation Multiconference (ESM), Prag; 2001-06-06 - 2001-06-09; in "Proceedings European Simulation Multiconference ESM 2001", (2001), ISBN: 1-56555-225-3, 161 - 165. BibTeX

21. A. Wolf, T. Grasser, S. Selberherr:
"Automatic Binding of SPICE Models to the Device/Circuit Simulator MINIMOS-NT";
Talk: European Simulation Multiconference (ESM), Prag; 2001-06-06 - 2001-06-09; in "Proceedings European Simulation Multiconference ESM 2001", (2001), ISBN: 1-56555-225-3, 314 - 318. BibTeX

20. T. Grasser, S. Selberherr:
"Technology CAD: Device Simulation and Characterization";
Talk: Ultra Shallow Junctions Conference, Napa; (invited) 2001-04-22 - 2001-04-26; in "Sixth International Workshop on the Fabrication, Characterization, and Modeling of Ultra Shallow Doping Profiles in Semiconductors", (2001), 4 - 11. BibTeX

19. T. Grasser:
"Simulation of Semiconductor Devices and Circuits at High Frequencies";
Talk: GMe Forum 2001, Wien; (invited) 2001-04-05 - 2001-04-06; in "Proceedings of the GMe Forum", (2001), 91 - 96. BibTeX

18. M. Gritsch, H. Kosina, T. Grasser, S. Selberherr:
"A Simulation Study of Partially Depleted SOI MOSFETs";
Talk: Symposium on Silicon-on-Insulator Technology and Devices, Washington; 2001-03-25 - 2001-03-29; in "Proceedings Symp. on Silicon-on-Insulator Technology and Devices", (2001), ISBN: 1-56677-309-1, 181 - 186. BibTeX

17. T. Grasser, H. Kosina, M. Gritsch, S. Selberherr:
"A Physics-Based Impact Ionization Model Using Six Moments of the Boltzmann Transport Equation";
Talk: International Conference on Modeling and Simulation of Microsystems (MSM), Hilton Head Island; 2001-03-19 - 2001-03-21; in "Technical Proceedings of the Fourth International Conference on Modeling and Simulation of Microsystems", (2001), ISBN: 0-9708275-0-4, 474 - 477. BibTeX

16. T. Grasser, H. Kosina, S. Selberherr:
"Hydrodynamic and Energy-Transport Models for Semiconductor Device Simulation";
Talk: International Conference on the Experience of Designing and Application of CAD Systems in Microelectronics, Lviv-Slavsko; (invited) 2001-02-12 - 2001-02-17; in "The Experience of Designing and Application of CAD Systems in Microelectronics", (2001), ISBN: 966-553-079-8, 19 - 30. BibTeX

15. R. Klima, T. Grasser, T. Binder, S. Selberherr:
"Controlling TCAD Applications with a Dynamic Database";
Talk: International Conference on Software Engineering and Applications (SEA), Las Vegas; 2000-11-06 - 2000-11-09; in "Proceedings of the IASTED Intl. Conf. on Software Engineering and Applications", (2000), ISBN: 0-88986-306-7, 103 - 112. BibTeX

14. T. Grasser, S. Selberherr:
"Electro-Thermal Effects in Mixed-Mode Device Simulation";
Talk: International Semiconductor Conference (CAS), Sinaia; (invited) 2000-10-10 - 2000-10-14; in "Proceedings CAS 2000 Conference", (2000), ISBN: 0-7803-5885-6, 43 - 52. BibTeX

13. T. Grasser, R. Quay, V. Palankovski, S. Selberherr:
"A Global Self-Heating Model for Device Simulation";
Talk: European Solid-State Device Research Conference (ESSDERC), Cork; 2000-09-11 - 2000-09-13; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2000), ISBN: 2-86332-248-6, 324 - 327 doi:10.1109/ESSDERC.2000.194780. BibTeX

12. V. Palankovski, T. Grasser, M. Knaipp, S. Selberherr:
"Simulation of Polysilicon Emitter Bipolar Transistors";
Poster: European Solid-State Device Research Conference (ESSDERC), Cork; 2000-09-11 - 2000-09-13; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2000), ISBN: 2-86332-248-6, 608 - 611 doi:10.1109/ESSDERC.2000.194851. BibTeX

11. R. Quay, H. Massler, W. Kellner, T. Grasser, V. Palankovski, S. Selberherr:
"Simulation of Gallium-Arsenide Based High Electron Mobility Transistors";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Seattle, WA, USA; 2000-09-06 - 2000-09-08; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2000), ISBN: 0-7803-6279-9, 74 - 77 doi:10.1109/SISPAD.2000.871210. BibTeX

10. T. Grasser, S. Selberherr:
"Mixed-Mode Device Simulation";
Talk: International Conference on Microelectronics (MIEL), Nis; (invited) 2000-05-14 - 2000-05-17; in "22nd International Conference on Microelectronics", (2000), ISBN: 0-7803-5235-1, 35 - 42. BibTeX

9. R. Quay, R. Reuter, T. Grasser, S. Selberherr:
"Thermal Simulations of III/V HEMTs";
Talk: International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO), London; 1999-11-22 - 1999-11-23; in "Proceedings High Performance Electron Devices for Microwave and Optoelectronic Applications", (1999), ISBN: 0-7803-5298-x, 87 - 92. BibTeX

8. T. Grasser, H. Kosina, S. Selberherr:
"Consistent Comparison of Drift-Diffusion and Hydro-Dynamic Device Simulations";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kyoto, Japan; 1999-09-06 - 1999-09-08; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1999), ISBN: 4-930813-98-0, 151 - 154 doi:10.1109/SISPAD.1999.799283. BibTeX

7. T. Grasser, S. Selberherr, K. Tsueno, H. Masuda:
"Mobility Parameter Tuning for Device Simulation";
Talk: European Solid-State Device Research Conference (ESSDERC), Bordeaux; 1998-09-07 - 1998-09-09; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1998), ISBN: 2-86332-234-6, 336 - 339. BibTeX

6. T. Grasser, V. Palankovski, G. Schrom, S. Selberherr:
"Hydrodynamic Mixed-Mode Simulation";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 1998-09-02 - 1998-09-04; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4, 247 - 250 doi:10.1007/978-3-7091-6827-1_62. BibTeX

5. T. Grasser, R. Strasser, M. Knaipp, K. Tsueno, H. Masuda, S. Selberherr:
"Device Simulator Calibration for Quartermicron CMOS Devices";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 1998-09-02 - 1998-09-04; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4, 93 - 96 doi:10.1007/978-3-7091-6827-1_26. BibTeX

4. G. Kaiblinger-Grujin, T. Grasser, S. Selberherr:
"A Physically-Based Electron Mobility Model for Silicon Device Simulation";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 1998-09-02 - 1998-09-04; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4, 312 - 315 doi:10.1007/978-3-7091-6827-1_78. BibTeX

3. T. Grasser, R. Strasser, M. Knaipp, H. Masuda, S. Selberherr:
"Calibration of a Mobility Model for Quartermicron CMOS Devices";
Poster: European Simulation Multiconference (ESM), Manchester; 1998-06-16 - 1998-06-19; in "Proceedings European Simulation Multiconference", (1998), ISBN: 1-56555-148-6, 75 - 77. BibTeX

2. V. Palankovski, T. Grasser, S. Selberherr:
"SiGe HBT in Mixed-Mode Device and Circuit Simulation";
Talk: Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Zeuthen; 1998-05-24 - 1998-05-27; in "Proceedings Workshop on Compound Semiconductor Devices and Integrated Circuits", (1998), 145 - 156. BibTeX

1. M. Knaipp, T. Grasser, S. Selberherr:
"A Physically Based Substrate Current Simulation";
Poster: European Solid-State Device Research Conference (ESSDERC), Stuttgart; 1997-09-22 - 1997-09-24; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1997), ISBN: 2-86332-221-4, 196 - 199. BibTeX


Talks and Poster Presentations (without Proceedings-Entry)


50. T. Grasser:
"CaF2 Insulators for Ultrascaled 2D Field Effect Transistors";
Talk: IEEE EDS Distinguished Lecture at RWTH Aachen, Aachen, Germany; (invited) 2019-11-26. BibTeX

49. T. Grasser:
"CaF2 Insulators for Ultrascaled 2D Field Effect Transistors";
Talk: Workshop "Wafer-scale Integration of 2D materials", Aachen, Germany; (invited) 2019-11-13. BibTeX

48. Yu. Illarionov, A. Banshchikov, D.K Polyushkin, S. Wachter, M. I. Vexler, N. S. Sokolov, T. Müller, T. Grasser:
"Reliability and Thermal Stability of MoS2 FETs with Ultrathin CaF2 Insulator";
Talk: IEEE Nanotechnology Materials and Devices Conference (NMDC), Stockholm, Sweden; (invited) 2019-10-27 - 2019-10-30; . BibTeX

47. Yu. Illarionov, A. Banshchikov, D.K Polyushkin, S. Wachter, M. Vexler, N. S. Sokolov, T. Müller, T. Grasser:
"CaF2 Insulators for Ultrascaled 2D Field Effect Transistors";
Talk: Graphene Week, Helsinki, Finland; (invited) 2019-09-23 - 2019-09-27; . BibTeX

46. T. Grasser:
"Multiscale Reliability Modeling";
Talk: IEEE EDS Distinguished Lecture at the SINANO Sommer School 2018, Tarragona, Spain; (invited) 2018-09-25. BibTeX

45. Yu. Illarionov, B. Stampfer, F. Zhang, T. Knobloch, P. Wu, M. Waltl, A. Grill, J. Appenzeller, T. Grasser:
"Characterization of Single Defects: from Si to MoS2 FETs";
Poster: International Conference on Physics of 2D Crystals (ICP2C3), Valetta, Malta; 2018-05-29 - 2018-06-02; . BibTeX

44. T. Grasser:
"Defects in 3D and 2D Field Effect Transistors: Characterization and Modeling";
Talk: IEEE EDS Distinguished Lecture, Aachen, Germany; (invited) 2017-11-23. BibTeX

43. C. Ostermaier, P. Lagger, M. Reiner, A. Grill, R. Stradiotto, G. Pobegen, T. Grasser, R. Pietschnig, D. Pogany:
"Review of bias-temperature instabilities at the III-N/dielectric interface";
Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Bordequx, Frankreich; 2017-09-25 - 2017-09-28; . BibTeX

42. Yu. Illarionov, M. Waltl, T. Knobloch, G. Rzepa, T. Grasser:
"Reliability Perspective of 2D Electronics";
Talk: International Conference on Physics of 2D Crystals (ICP2C2), Ha Long, Vietnam; 2017-04-25 - 2017-04-30; . BibTeX

41. T. Grasser:
"Charge Trapping and Time-dependent Variability in Low-Voltage MOS Transistors";
Talk: Short Course at IEEE EDS Electron Devices Technology and Manufacturing Conference, Toyama, Japan; (invited) 2017-02-28. BibTeX

40. T. Grasser:
"Charge Trapping and Time-dependent Variability in CMOS Transistors";
Talk: IEEE EDS Distinguished Lecture, Stuttgart,Germany; (invited) 2017-01-24. BibTeX

39. C. Ostermaier, P. Lagger, G. Prechtl, A. Grill, T. Grasser, D. Pogany:
"The role of electron transport in the charge trapping at the III-N/dielectric interface in AlGaN/GaN MIS-HEMT structures";
Talk: Semiconductor Interface Specialists Conference, Arlington, VA, USA; 2015-12-02 - 2015-12-05; . BibTeX

38. T. Grasser:
"Recent Progress in Understanding the Bias Temperature Instability: from Single Traps to Distributions";
Talk: IEEE EDS Distinguished Lecture, Hiroshima, Japan; (invited) 2015-08-26. BibTeX

37. T. Grasser:
"Advanced Modeling and Characterization of Bias Temperature Instabilities and Hot Carrier Degradation";
Talk: Kyoto Institute of Technology, Kyoto, Japan; (invited) 2015-08-24. BibTeX

36. T. Grasser:
"Advanced Modeling and Characterization of Bias Temperature Instabilities and Hot Carrier Degradation";
Talk: D2T Symposium, Tokyo, Japan; (invited) 2015-08-21. BibTeX

35. T. Grasser:
"Oxide Defects in MOS Transistors: Characterization and Modeling";
Talk: Workshop on Dielectrics in Microelectronics (WODIM), Kinsale, Ireland; (invited) 2015-06-09 - 2015-06-11; . BibTeX

34. T. Grasser:
"Charge Transfer of Single Holes in Nanoscale MOS Transistors: Linking DFT to Experiment";
Talk: CECAM-Workshop on Structural and Electronic Phenomena at Interfaces of Nanoscale Oxides, Lausanne, Switzerland; (invited) 2015-04-08 - 2015-04-10; . BibTeX

33. K. Rupp, A. Jüngel, T. Grasser:
"A Performance Comparison of Algebraic Multigrid Preconditioners on GPUs and MIC";
Talk: Copper Mountain Conference on Multigrid Methods, Copper Mountain, CO, USA; 2015-03-22 - 2015-03-27; . BibTeX

32. K. Rupp, M. Bina, A. Morhammer, T. Grasser, A. Jüngel:
"ViennaSHE: A Semiconductor Device Simulator Based on the Spherical Harmonics Expansion Method";
Talk: Workshop on Applied Mathematics and Simulation for Semiconductors (AMaSIS), Berlin, Germany; (invited) 2015-03-11 - 2015-03-13; . BibTeX

31. T. Grasser:
"Oxide Defects in MOS Transistors: Characterization and Modeling";
Talk: IEEE EDS Distinguished Lecture, Aranjuez, Spain; (invited) 2015-02-11. BibTeX

30. T. Grasser:
"Characterization and Modeling of Charge Trapping and Hot Carrier Degradation";
Talk: IEEE EDS Distinguished Lecture, Agrate Brianza, Italy; (invited) 2014-12-11. BibTeX

29. T. Grasser:
"Characterization and Modeling of Charge Trapping in CMOS Transistors";
Talk: International Workshop on Characterization and Modeling of Memory Devices, Agrate Brianza, Italy; (invited) 2014-10-02 - 2014-10-03; . BibTeX

28. T. Grasser:
"Bias Temperature Instability in CMOS Nanodevices";
Talk: SINANO Summer School, Bertinoro, Italy; (invited) 2014-08-25 - 2014-08-29; . BibTeX

27. T. Grasser:
"Aging in CMOS Devices: From Microscopic Physics to Compact Models";
Talk: The 2012 Forum on Specification & Design Languages, Vienna, Austria; (invited) 2012-09-18 - 2012-09-20; . BibTeX

26. F. Schanovsky, T. Grasser:
"Bias Temperature Instabilities in highly-scaled MOSFETs";
Talk: 2012 CMOS Emerging Technologies, Vancouver, BC Canada; (invited) 2012-07-18 - 2012-07-21; . BibTeX

25. T. Grasser:
"Modeling of Device Reliability";
Talk: Tutorial at 37th European Solid-State Devices Conference, Helsinki, Finland; 2011-09-12 - 2011-09-16; . BibTeX

24. T. Grasser:
"Oxide Defects: From Microscopic Physics to Compact Models";
Talk: SISPAD Workshop, Osaka, JAPAN; 2011-09-08 - 2011-09-10; . BibTeX

23. T. Grasser:
"Cause, Detection, and Impact of Charge Trapping on Aging";
Talk: VLSI Symposium Short Course, Kyoto, Japan; 2011-06-14 - 2011-06-18; . BibTeX

22. J. Franco, B. Kaczer, J. Mitard, G. Eneman, Ph. J. Roussel, F. Crupi, T. Grasser, L. Witters, T. Y. Hoffmann, G. Groeseneken:
"Implications of Channel Hot Carrier Degradation in Si0.45Ge0.55 pMOSFETs";
Poster: Semiconductor Interface Specialists Conference (SISC), San Diego; 2010-12-02 - 2010-12-04; . BibTeX

21. M. Toledano-Luque, B. Kaczer, Ph. J. Roussel, R. Degraeve, J. Franco, T. Kauerauf, T. Grasser, G. Groeseneken:
"Depth Localization of Trapped Holes in SiON after Positive and Negative Gate Stress";
Poster: Semiconductor Interface Specialists Conference (SISC), San Diego; 2010-12-02 - 2010-12-04; . BibTeX

20. T. Grasser, H. Reisinger, P.-J. Wagner, W. Gös, F. Schanovsky, B. Kaczer:
"The Time Dependent Defect Spectroscopy (TDDS) for the Characterization of the Bias Temperature Instability";
Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Gaeta; (invited) 2010-10-11. BibTeX

19. T. Grasser:
"Recent Developments in Device Reliability Modeling";
Talk: MOS-AK ESSDERC Companion Workshop, Seville; (invited) 2010-09-17. BibTeX

18. T. Grasser:
"Statistical Reliability in Nanoscale Devices";
Talk: SISPAD Workshop, Bologna; (invited) 2010-09-08. BibTeX

17. T. Grasser:
"Transport Modeling in Modern Semiconductor Devices";
Talk: CoMoN Workshop 2010, Tarragona; (invited) 2010-06-30 - 2010-07-01; . BibTeX

16. T. Grasser:
"Characterization and Modeling of the Negative Bias Temperature Instability";
Talk: VDE/VDI GMM Workshop "Stand und Perspektiven von SOI-Technologien und Anwendungen", Duisburg; (invited) 2010-03-18 - 2010-03-19; . BibTeX

15. J. Franco, B. Kaczer, A. Stesmans, V. Afanas´Ev, K. Martens, M. Aoulaiche, T. Grasser, J. Mitard, G. Groeseneken:
"Impact of Si-Passivation Thickness and Processing on NBTI Reliability of Ge and SiGe pMOSFETs";
Talk: 40th Semiconductor Interface Specialists Conference (SISC), Washington; 2009-12-03 - 2009-12-05; . BibTeX

14. T. Grasser:
"Physical Mechanisms and Modeling of the Bias Temperature Instability";
Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Arcachon; 2009-10-05 - 2009-10-09; . BibTeX

13. T. Grasser:
"Understanding Negative Bias Temperature Instability in the Context of Hole Trapping";
Talk: International Conference on Insulating Films on Semiconductors (INFOS), Cambridge; (invited) 2009-06-29 - 2009-07-01; . BibTeX

12. T. Aichinger, M. Nelhiebel, T. Grasser:
"On the Temperature Dependence of NBTI Recovery";
Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Maastricht; 2008-09-29 - 2008-10-02; . BibTeX

11. T. Grasser:
"Device Simulation Based on the Statistical Moments of the Boltzmann Transport Equation";
Talk: 3rd SINANO Device Modeling Summer School, Bertinoro, Italy; 2008-09-01 - 2008-09-05; . BibTeX

10. K. Martens, B. Kaczer, T. Grasser, B. De Jaeger, M. Meuris, G. Groeseneken, H.E. Maes:
"Charge Pumping Charcaterization of Germanium MOSFETs";
Talk: Semiconductor Interface Specialists Conference (SISC), Arlington; 2007-12-06 - 2007-12-08; . BibTeX

9. T. Grasser, M. Vasicek, M. Wagner:
"Higher-Order Moment Models for Engineering Applications";
Talk: Equadiff, Wien; 2007-08-05 - 2007-08-11; . BibTeX

8. T. Grasser:
"Mixed Mode Device/Circuit Simulation";
Talk: MOS-AK ESSDERC Companion Workshop, Grenoble; (invited) 2005-09-16. BibTeX

7. S. Holzer, Ch. Hollauer, H. Ceric, S. Wagner, E. Langer, T. Grasser, S. Selberherr:
"Transient Electro-Thermal Investigations of Interconnect Structures Exposed to Mechanical Stress";
Talk: SPIE VLSI Circuits and Systems, Sevilla, Spain; 2005-05-09 - 2005-05-11; . BibTeX

6. T. Grasser:
"Higher-Order Moment Models for Engineering Applications";
Talk: Recent Advances in Modeling and Simulation of Semiconductor Devices and Circuits (SEMIC), Milano; (invited) 2005-02-17 - 2005-02-18; . BibTeX

5. A. Sheikholeslami, C. Heitzinger, E. Al-Ani, R. Heinzl, T. Grasser, S. Selberherr:
"Three-Dimensional Surface Evolution Using a Level Set Method";
Poster: Iranian Ph.D. Students Seminar on Computer Science, Mathematics and Statistics (ICSMS), Paris; 2004-12-01. BibTeX

4. T. Ayalew, A. Gehring, T. Grasser, S. Selberherr:
"Enhancement of Breakdown Voltage for Ni-SiC Schottky Diodes Utilizing Field Plate Edge Termination";
Poster: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Zürich; 2004-10-04 - 2004-10-08; . BibTeX

3. S. Wagner, T. Grasser, S. Selberherr:
"Evaluation of Linear Solver Modules for Semiconductor Device Simulation";
Talk: International Conference on Mathematical Problems in Engineering and Aerospace Sciences (ICNPAA), Timisoara; (invited) 2004-06-02 - 2004-06-04; . BibTeX

2. T. Ayalew, A. Gehring, J.M. Park, T. Grasser, S. Selberherr:
"Improving SiC Lateral DMOSFET Reliability under High Field Stress";
Poster: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Arcachon; 2003-10-07 - 2003-10-10; . BibTeX

1. T. Grasser:
"Simulation of SOI-Devices";
Talk: VDE/VDI GMM Workshop "Stand und Perspektiven von SOI-Technologien und Anwendungen", München; (invited) 2001-05-17 - 2001-05-18; . BibTeX


Habilitation Theses


1. T. Grasser:
"Simulation of Miniaturized Semiconductor Devices";
TU Wien, Fakultät für Elektrotechnik und Informationstechnik, (2002), . BibTeX


Doctor's Theses (authored and supervised)


33. J. Berens:
"Carrier Mobility and Reliability of 4H-SiC Trench MOSFETs";
Reviewer: T. Grasser, J. Cooper, P. Pichler; E360, 2020, oral examination: 2020-12-22. BibTeX

32. K. Waschneck:
"Modeling Bias Temperature Instability in Si and SiC MOSFETs using Activation Energy Maps";
Reviewer: T. Grasser, J. Schmitz, S. Reggiani; E360, 2020, oral examination: 2020-12-07. BibTeX

31. B. Stampfer:
"Advanced Electrical Characterization of Charge Trapping in MOS Transistors";
Reviewer: T. Grasser, M. Nafria Maqueda, F. M. Puglisi; E360, 2020, oral examination: 2020-12-04. BibTeX

30. M. Jech:
"The Physics of Non-Equilibrium Reliability Phenomena";
Reviewer: T. Grasser, M. Luisier, A. Bravaix; E360, 2020, oral examination: 2020-11-19. BibTeX

29. C Koller:
"The Role of Carbon in Creating Insulating Behavior in GaN-on-Si Buffers: A Physical Model";
Reviewer: D. Pogany, T. Grasser, T. Uren; Institut für Festkörperelektronik, 2019, oral examination: 2019-01-22. BibTeX

28. G. Rescher:
"Behavior of SiC-MOSFETs under Temperature and Voltage Stress";
Reviewer: T. Grasser, P. Hadley, J. Cooper; Institut für Mikroelektronik, 2018, oral examination: 2018-11-13. BibTeX

27. A. Grill:
"Charge Trapping and Single-Defect Extraction in Gallium-Nitride Based MIS-HEMTs";
Reviewer: T. Grasser, G. Meneghesso, D. Pogany; Institut für Mikroelektronik, 2018, oral examination: 2018-10-22. BibTeX

26. G.A. Rott:
"Negative Bias Temperature Instability and Hot-Carrier Degradation of 130 nm Technology Transistors including Recovery Effects";
Reviewer: T. Grasser, J. Schmitz, S. Reggiani; Institut für Mikroelektronik, 2018, oral examination: 2018-06-28. BibTeX

25. B. Ullmann:
"Mixed Negative Bias Temperature Instability and Hot-Carrier Stress";
Reviewer: T. Grasser, J. Schmitz, S. Reggiani; Institut für Mikroelektronik, 2018, oral examination: 2018-06-28. BibTeX

24. G. Rzepa:
"Efficient Physical Modeling of Bias Temperature Instability";
Reviewer: T. Grasser, L. Larcher, F. Crupi; Institut für Mikroelektronik, 2018, oral examination: 2018-06-27. BibTeX

23. Y. Wimmer:
"Hydrogen Related Defects in Amorphous SiO2 and the Negative Bias Temperature Instability";
Reviewer: T. Grasser, M. Watkins, P. Mohn; Institut für Mikroelektronik, 2017, oral examination: 2017-11-27. BibTeX

22. R. Stradiotto:
"Characterization of Electrically Active Defects at III-N/Dielectric Interfaces";
Reviewer: T. Grasser, G. Meneghesso; Institut für Mikroelektronik, 2016, oral examination: 2016-12-16. BibTeX

21. M. Waltl:
"Characterization of Bias Temperature Instabilities in Modern Transistor Technologies";
Reviewer: T. Grasser, D. Schmitt-Landsiedel; Institut für Mikroelektronik, 2016, oral examination: 2016-09-09. BibTeX

20. R. Coppeta:
"Dislocation Modeling in III-Nitrides";
Reviewer: T. Grasser, A. Köck; Institut für Mikroelektronik, 2015, oral examination: 2016-06-15. BibTeX

19. Yu. Illarionov:
"Characterization and Modeling of Charged Defects in Silicon and 2D Field-Effect Transistors";
Reviewer: T. Grasser, L. Larcher; Institut für Mikroelektronik, 2015, oral examination: 2015-12-18. BibTeX

18. M. Bina:
"Charge Transport Models for Reliability Engineering of Semiconductor Devices";
Reviewer: T. Grasser, C. Jungemann; Institut für Mikroelektronik, 2014, oral examination: 2014-03-25. BibTeX

17. G. Pobegen:
"Degradation of Electrical Parameters of Power Semiconductor Devices - Process Influences and Modeling";
Reviewer: T. Grasser, P. Hadley; Institut für Mikroelektronik, 2013, oral examination: 2013-12-05. BibTeX

16. F. Schanovsky:
"Atomistic Modeling in the Context of the Bias Temperature Instability";
Reviewer: T. Grasser, A. Schenk; Institut für Mikroelektronik, 2013, oral examination: 2013-03-19. BibTeX

15. I. Starkov:
"Comprehensive Physical Modeling of Hot-Carrier Induced Degradation";
Reviewer: T. Grasser, M. Gröschl; Institut für Mikroelektronik, 2013, oral examination: 2013-01-14. BibTeX

14. Rui Huang:
"Stress and Microstructural Evolution of Electroplated Copper Films";
Reviewer: T. Grasser, G. Dehm; Institut für Mikroelektronik, 2013, oral examination: 2013-01-09. BibTeX

13. O. Triebl:
"Reliability Issues in High Voltage Semiconductor Devices";
Reviewer: T. Grasser, M. Gröschl; Institut für Mikroelektronik, 2012, oral examination: 2012-10-24. BibTeX

12. W. Gös:
"Hole Trapping and the Negative Bias Temperature Instability";
Reviewer: T. Grasser, D. Süss; Institut für Mikroelektronik, 2011, oral examination: 2012-12-22. BibTeX

11. K. Rupp:
"Deterministic Numerical Solution of the Boltzmann Transport Equation";
Reviewer: T. Grasser, C. Jungemann; E360, 2011, oral examination: 2011-12-19. BibTeX

10. Ph. Hehenberger:
"Advanced Characterization of the Bias Temperature Instability";
Reviewer: T. Grasser, M. Gröschl; Institut für Mikroelektronik, 2011, oral examination: 2011-12-14. BibTeX

9. T. Aichinger:
"On the Role of Hydrogen in Silicon Device Degradation and Metalization Processing";
Reviewer: T. Grasser, H. Hutter; Institut für Mikroelektronik, 2010, oral examination: 2010-09-01. BibTeX

8. M. Vasicek:
"Advanced Macroscopic Transport Models";
Reviewer: T. Grasser, J. Summhammer; Institut für Mikroelektronik, 2009, oral examination: 2009-10-12. BibTeX

7. M. Wagner:
"Simulation of Thermoelectric Devices";
Reviewer: T. Grasser, E. Bertagnolli; Institut für Mikroelektronik, 2007, oral examination: 2007-12-18. BibTeX

6. R. Entner:
"Modeling and Simulation of Negative Bias Temperature Instability";
Reviewer: T. Grasser, G. Magerl; Institut für Mikroelektronik, 2007, oral examination: 2007-08-13. BibTeX

5. S. Holzer:
"Optimization for Enhanced Thermal Technology CAD Purposes";
Reviewer: T. Grasser, H. Schichl; Institut für Mikroelektronik, 2007, oral examination: 2007-06-28. BibTeX

4. S. Wagner:
"Small-Signal Device and Circuit Simulation";
Reviewer: T. Grasser, E. Bertagnolli; Institut für Mikroelektronik, 2005, oral examination: 2005-04-22. BibTeX

3. J. Cervenka:
"Three-Dimensional Mesh Generation for Device and Process Simulation";
Reviewer: T. Grasser, H. Haas; Institut für Mikroelektronik, 2004, oral examination: 2004-10-20. BibTeX

2. R. Kosik:
"Numerical Challenges on the Road to NanoTCAD";
Reviewer: T. Grasser, Ch. Schmeiser; Institut für Mikroelektronik, 2004, oral examination: 2004-09-09. BibTeX

1. T. Grasser:
"Mixed-Mode Device Simulation";
Reviewer: S. Selberherr, E. Gornik; Institut für Mikroelektronik, 1999, oral examination: 1999-05-21. BibTeX


Diploma and Master Theses (authored and supervised)


25. C. Schleich:
"Charakterisierung und Modellierung von SiC Transistoren";
Supervisor: T. Grasser, M. Waltl; Institut für Mikroelektronik, 2019, final examination: 2019-01-25. BibTeX

24. P. Fleischanderl:
"Charakterisierung von Hot Carrier Degradation in Siliziumtransistoren";
Supervisor: T. Grasser, M. Waltl; Institut für Mikroelektronik, 2018, final examination: 2018-11-26. BibTeX

23. D. Waldhör:
"Potential Energy Surface Approximations for Nonradiative-Multiphonon Charge Transitions in Oxide Defects";
Supervisor: T. Grasser, Y. Wimmer; Institut für Mikroelektronik, 2018, final examination: 2018-10-05. BibTeX

22. A. Selinger:
"Lösung der Poisson Gleichung auf Supercomputern";
Supervisor: T. Grasser, K. Rupp; Institut für Mikroelektronik, 2018, final examination: 2018-06-13. BibTeX

21. M. Bellini:
"Ab Initio Study of Hexagonal Boron Nitride and Molybdenum Disulfide";
Supervisor: T. Grasser, M. Jech, Y. Wimmer; Institut für Mikroelektronik, 2017, final examination: 2017-03-09. BibTeX

20. T. Knobloch:
"Characterization and Physical Modeling of Degradation in MoS2 Transistors";
Supervisor: T. Grasser, G. Rzepa; Institut für Mikroelektronik, 2016, final examination: 2016-10-07. BibTeX

19. M. Huymajer:
"Cluster Detection Algorithm to Study Single Charge Trapping Events in TDDS";
Supervisor: T. Grasser, M. Waltl; Institut für Mikroelektronik, 2016, final examination: 2016-06-16. BibTeX

18. B. Stampfer:
"Trap Assisted Tunneling and Band Interaction using the Non-Radiative Multi Phonon Model";
Supervisor: T. Grasser, A. Grill; Institut für Mikroelektronik, 2016, final examination: 2016-01-22. BibTeX

17. G. Rzepa:
"Microscopic Modeling of NBTI in MOS Transistors";
Supervisor: T. Grasser, W. Gös; Institut für Mikroelektronik, 2013, final examination: 2013-11-20. BibTeX

16. M. Braitner:
"Erstellung und Verifikation von Modellen für Leistungs-MOSFETs für die quantitative EMV-Simulation";
Supervisor: T. Grasser, P.-J. Wagner; Institut für Mikroelektronik, 2012, final examination: 2012-01-13. BibTeX

15. M. Waltl:
"Change Point Detection in Time Dependent Defect Spectroscopy Data";
Supervisor: T. Grasser, P.-J. Wagner; Institut für Mikroelektronik, 2011, final examination: 2011-11-25. BibTeX

14. P. Lagger:
"Scattering Operators for the Spherical Harmonics Expansion of the Boltzmann Transport Equation";
Supervisor: T. Grasser, K. Rupp; Institut für Mikroelektronik, 2011, final examination: 2011-10-07. BibTeX

13. B. Schwarz:
"Simulation of Random Dopant Fluctuations with a Quantum Corrected Drift Diffusion Model";
Supervisor: T. Grasser, M. Bina; Institut für Mikroelektronik, 2011, final examination: 2011-06-17. BibTeX

12. M. Bina:
"Simulation of Interface States Generated During Stress in MOSFETs";
Supervisor: T. Grasser; Institut für Mikroelektronik, 2010, final examination: 2010-04-23. BibTeX

11. Z. Stanojevic:
"Simulation of Carrier Transport in Ultra-Thin-Body Devices";
Supervisor: T. Grasser; Institut für Mikroelektronik, 2009, final examination: 2009-06-19. BibTeX

10. F. Schanovsky:
"Dispersive Transport Modeling within the Multiple Trapping Framework";
Supervisor: T. Grasser; Institut für Mikroelektronik, 2008, final examination: 2008-03-14. BibTeX

9. O. Baumgartner:
"Simulation of Quantum Transport Using the Non-Equilibrium Green´s Functions Formalism";
Supervisor: T. Grasser, M. Karner; Institut für Mikroelektronik, 2007, final examination: 2007-01-18. BibTeX

8. M. Karner:
"Multi-Dimensional Simulation of Closed Quantum Systems";
Supervisor: T. Grasser, A. Gehring; Institut für Mikroelektronik, 2004, . BibTeX

7. M. Spevak:
"Simulation of Rotationally Symmetric Semiconductor Devices";
Supervisor: T. Grasser, A. Gehring; Institut für Mikroelektronik, 2004, . BibTeX

6. M. Wagner:
"A Base Library for Full Band Monte Carlo Simulations";
Supervisor: T. Grasser, H. Kosina; Institut für Mikroelektronik, 2004, . BibTeX

5. R. Entner:
"Three-Dimensional Device Simulation with MINIMOS-NT Using the Wafer-State-Server";
Supervisor: T. Grasser, A. Gehring; Institut für Mikroelektronik, 2003, . BibTeX

4. M. Bacher:
"Implementierung einer Client/Server-Architektur mit Graphischer Benutzeroberfläche als Verteilte Anwendung";
Supervisor: E. Langer, T. Grasser; Institut für Mikroelektronik, 2002, . BibTeX

3. S. Wagner:
"The Minimos-NT Linear Equation Solving Module";
Supervisor: S. Selberherr, T. Grasser; Institut für Mikroelektronik, 2001, . BibTeX

2. M. Gritsch:
"Implementation of a Non-Parabolic Energy-Transport Model";
Supervisor: H. Kosina, T. Grasser; Institut für Mikroelektronik, 1999, . BibTeX

1. T. Grasser:
"Ein Kontaktmodell zur Simulation von Poly-Emitter-Bipolar-Transistoren";
Supervisor: S. Selberherr, H. Kosina; Institut für Mikroelektronik, 1995, . BibTeX


Scientific Reports


12. T. Grasser:
"Verification and Validation of the Coupled HCI & NBTI Model for HV Devices";
(2010), 20 page(s) . BibTeX

11. T. Grasser, M. Karner, C. Kernstock, H. Kosina, O. Triebl:
"Customized Software Development Report";
(2010), 22 page(s) . BibTeX

10. H. Ceric, T. Grasser, R. Orio, M. Pourfath, M. Vasicek, S. Selberherr:
"VISTA Status Report I";
(2008), 38 page(s) . BibTeX

9. T. Grasser:
"Report on Coupled NBTI and HC Models for HV Devices";
(2008), 24 page(s) . BibTeX

8. T. Grasser, W. Gös, O. Triebl, Ph. Hehenberger, P.-J. Wagner, P. Schwaha, R. Heinzl, S. Holzer, R. Entner, S. Wagner, F. Schanovsky:
"3 Year Report 2005-2007";
(2007), 34 page(s) . BibTeX

7. D. Grützmacher, S. Dhar, G. Milovanovic, T. Grasser, H. Kosina:
"Disposable Dot Field Effect Transistor for High Speed Si Integrated Circuits";
(2007), 107 page(s) . BibTeX

6. M. Vasicek, T. Grasser:
"Higher-Order Macroscopic Transport Models";
(2007), 2 page(s) . BibTeX

5. T. Grasser, M. Gritsch, C. Heitzinger, A. Hössinger, S. Selberherr:
"VISTA Status Report II";
(2001), 25 page(s) . BibTeX

4. K. Dragosits, T. Grasser, R. Strasser, S. Selberherr:
"VISTA Status Report I";
(1999), 31 page(s) . BibTeX

3. T. Grasser, A. Hössinger, R. Kosik, R. Mlekus, W. Pyka, M. Stockinger, S. Selberherr:
"VISTA Status Report II";
(1999), 58 page(s) . BibTeX

2. K. Dragosits, T. Grasser, H. Kosina, R. Mlekus, W. Pyka, S. Selberherr:
"VISTA Status Report I";
(1998), 19 page(s) . BibTeX

1. T. Grasser, A. Hössinger, H. Kirchauer, M. Knaipp, R. Martins, R. Plasun, M. Rottinger, G. Schrom, S. Selberherr:
"VISTA Status Report II";
(1997), 36 page(s) . BibTeX

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Institute for Microelectronics
Head: Univ. Prof. Dipl.-Ing. Dr. techn. Tibor Grasser
Deputy Head: O. Univ. Prof. Dipl.-Ing. Dr. techn. Dr.h.c. Siegfried Selberherr
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