Publications Tibor Grasser
769 records
| 10. | T. Grasser: "Noise in Nanoscale Semiconductor Devices"; Springer Science+Business Media New York, (2020), ISBN: 978-3-030-37499-0, 729 page(s) doi:10.1007/978-3-030-37500-3. BibTeX |
| 9. | L. Filipovic, T. Grasser: "Miniaturized Transistors"; MDPI, (2019), ISBN: 978-3-03921-010-7, 202 page(s) doi:10.3390/books978-3-03921-011-4. BibTeX |
| 8. | L. Filipovic, T. Grasser: "Editorial for the Special Issue on Miniaturized Transistors"; Micromachines, 10, (2019), 1 - 3 doi:10.3390/mi10050300. BibTeX |
| 7. | T. Grasser, J. Stathis: "Bias Temperature Instability (BTI) in MOS Devices"; Microelectronics Reliability, 80, (2018), . BibTeX |
| 6. | T. Grasser: "Hot Carrier Degradation in Semiconductor Devices"; Springer International Publishing, (2014), ISBN: 978-3-319-08993-5, 517 page(s) doi:10.1007/978-3-319-08994-2. BibTeX |
| 5. | T. Grasser: "Bias Temperature Instability for Devices and Circuits"; Springer Science+Business Media New York, (2013), ISBN: 978-1-4614-7908-6, 810 page(s) doi:10.1007/978-1-4614-7909-3. BibTeX |
| 4. | G. Meller, T. Grasser: "Organic Electronics"; Springer-Verlag, Berlin-Heidelberg, (2009), ISBN: 978-3-642-04537-0, 328 page(s) doi:10.1007/978-3-642-04538-7. BibTeX |
| 3. | T. Grasser, S. Selberherr: "Simulation of Semiconductor Processes and Devices 2007"; Springer-Verlag, Wien - New York, Wien, (2007), ISBN: 978-3-211-72860-4, 460 page(s) doi:10.1007/978-3-211-72861-1. BibTeX |
| 2. | T. Grasser, S. Selberherr: "Modelling the Negative Bias Temperature Instability (Editorial)"; Microelectronics Reliability, 47, (2007), 839 - 840 doi:10.1016/j.microrel.2006.10.005. BibTeX |
| 1. | T. Grasser: "Advanced Device Modeling and Simulation"; World Scientific Publishing Co., (2003), ISBN: 9-812-38607-6, 210 page(s) . BibTeX |
| 203. | M. Feil, K. Puschkarsky, W. Gustin, H. Reisinger, T. Grasser: "On the Physical Meaning of Single-Value Activation Energies for BTI in Si and SiC MOSFET Devices"; IEEE Transactions on Electron Devices, 68, (2021), 236 - 243 doi:10.1109/TED.2020.3036321. BibTeX |
| 202. | T. Knobloch, Yu. Illarionov, F. Ducry, C. Schleich, S. Wachter, K. Watanabe, T. Taniguchi, T. Müller, M. Waltl, M. Lanza, M. I. Vexler, M. Luisier, T. Grasser: "The Performance Limits of Hexagonal Boron Nitride as an Insulator for Scaled CMOS Devices Based on Two-Dimensional Materials"; Nature Electronics, 4, (2021), 98 - 108 doi:10.1038/s41928-020-00529-x. BibTeX |
| 201. | J. Berens, G. Pobegen, T. Grasser: "Tunneling Effects in NH3 Annealed 4H-SiC Trench MOSFETs"; Materials Science Forum, 1004, (2020), 652 - 658 doi:10.4028/www.scientific.net/MSF.1004.652. BibTeX |
| 200. | M. Feil, A. Huerner, K. Puschkarsky, C. Schleich, T. Eichinger, W. Gustin, H. Reisinger, T. Grasser: "The Impact of Interfacial Charge Trapping on the Reproducibility of Measurements of Silicon Carbide MOSFET Device Parameters"; Crystals, 10, (invited) (2020), 1143-1 - 1143-14 doi:10.3390/cryst10121143. BibTeX |
| 199. | Yu. Illarionov, T. Knobloch, T. Grasser: "Native High-k Oxides for 2D Transistors"; Nature Electronics, 3, (2020), 442 - 443 doi:10.1038/s41928-020-0464-2. BibTeX |
| 198. | Yu. Illarionov, T. Knobloch, M. Jech, M. Lanza, D. Akinwande, M. I. Vexler, T. Müller, M. Lemme, G. Fiori, F. Schwierz, T. Grasser: "Insulators for 2D Nanoelectronics: The Gap to Bridge"; Nature Communications, 11, (2020), 3385 doi:10.1038/s41467-020-16640-8. BibTeX |
| 197. | M. Jech, G.A. Rott, H. Reisinger, S. Tyaginov, G. Rzepa, A. Grill, D. Jabs, C. Jungemann, M. Waltl, T. Grasser: "Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full {VG, VD} Bias Space: Implications and Peculiarities"; IEEE Transactions on Electron Devices, 67, (2020), 3315 - 3322 doi:10.1109/TED.2020.3000749. BibTeX |
| 196. | B. Ruch, G. Pobegen, T. Grasser: "Investigation of the Temperature Dependence of Hot-Carrier Degradation in Si MOSFETs Using Spectroscopic Charge Pumping"; IEEE Transactions on Electron Devices, 67, (2020), 4092 - 4098 doi:10.1109/TED.2020.3018091. BibTeX |
| 195. | B. Stampfer, F. Schanovski, T. Grasser, M. Waltl: "Semi-Automated Extraction of the Distribution of Single Defects for nMOS Transistors"; Micromachines, 11, (invited) (2020), 446-1 - 446-11 doi:10.3390/mi11040446. BibTeX |
| 194. | B. Stampfer, M. Simicic, P. Weckx, A. Abbasi, B. Kaczer, T. Grasser, M. Waltl: "Extraction of Statistical Gate Oxide Parameters From Large MOSFET Arrays"; IEEE Transactions on Device and Materials Reliability, 20, (invited) (2020), 251 - 257 doi:10.1109/TDMR.2020.2985109. BibTeX |
| 193. | M. Waltl, B. Stampfer, G. Rzepa, B. Kaczer, T. Grasser: "Separation of Electron and Hole Trapping Components of PBTI in SiON nMOS Transistors"; Microelectronics Reliability, 114, (2020), 113746-1 - 113746-5 doi:10.1016/j.microrel.2020.113746. BibTeX |
| 192. | C. Wen, A. Banshchikov, Yu. Illarionov, W. Frammelsberger, T. Knobloch, F. Hui, N. S. Sokolov, T. Grasser, M. Lanza: "Dielectric Properties of Ultrathin CaF2 Ionic Crystals"; Advanced Materials, 32, (2020), 2002525-1 - 2002525-6 doi:10.1002/adma.202002525. BibTeX |
| 191. | J. Berens, G. Pobegen, T. Eichinger, G. Rescher, T. Grasser: "Cryogenic Characterization of NH3 Post Oxidation Annealed 4H-SiC Trench MOSFETs"; Materials Science Forum, 963, (2019), 175 - 179 doi:10.4028/www.scientific.net/MSF.963.175. BibTeX |
| 190. | J. Berens, G. Pobegen, G. Rescher, T. Aichinger, T. Grasser: "NH3 and NO + NH3 Annealing of 4H-SiC Trench MOSFETs: Device Performance and Reliability"; IEEE Transactions on Electron Devices, 66, (2019), 4692 - 4697 doi:10.1109/TED.2019.2941723. BibTeX |
| 189. | R. Bernhard, G. Pobegen, M. Rösch, R. Vytla, T. Grasser: "Charge Pumping of Low-Voltage Silicon Trench Powers MOSFETs"; IEEE Transactions on Device and Materials Reliability, 19, (2019), 133 - 139 doi:10.1109/TDMR.2019.2891794. BibTeX |
| 188. | J. Franco, Z. Wu, G. Rzepa, L. Ragnarsson, H. Dekkers, A. Vandooren, G Groeseneken, N. Horiguchi, N. Collaert, D. Linten, T. Grasser, B. Kaczer: "On the Impact of the Gate Work-Function Metal on the Charge Trapping Component of NBTI and PBTI"; IEEE Transactions on Device and Materials Reliability, 19, (2019), 268 - 274 doi:10.1109/TDMR.2019.2913258. BibTeX |
| 187. | K. Giering, K. Puschkarsky, H. Reisinger, G. Rzepa, G.A. Rott, R. Vollertsen, T. Grasser, R. Jancke: "NBTI Degradation and Recovery in Analog Circuits: Accurate and Efficient Circuit-Level Modeling"; IEEE Transactions on Electron Devices, 66, (2019), 1662 - 1668 doi:10.1109/TED.2019.2901907. BibTeX |
| 186. | A. Grill, B. Stampfer, K.-S. Im, J. Lee, C. Ostermaier, H. Ceric, M. Waltl, T. Grasser: "Electrostatic Coupling and Identification of Single-Defects in GaN/AlGaN Fin-MIS-HEMTs"; Solid-State Electronics, 19, (2019), 41 - 47 doi:10.1016/j.sse.2019.02.004. BibTeX |
| 185. | Yu. Illarionov, A. Banshchikov, D.K Polyushkin, S. Wachter, T. Knobloch, M. Thesberg, L. Mennel, M. Paur, M. Stöger-Pollach, A. Steiger-Thirsfeld, M. I. Vexler, M. Waltl, N. S. Sokolov, T. Müller, T. Grasser: "Ultrathin Calcium Fluoride Insulators for Two-Dimensional Field-Effect Transistors"; Nature Electronics, 2, (2019), 230 - 235 doi:10.1038/s41928-019-0256-8. BibTeX |
| 184. | Yu. Illarionov, A. Banshchikov, D.K Polyushkin, S. Wachter, T. Knobloch, M. Thesberg, M. I. Vexler, M. Waltl, M. Lanza, N. S. Sokolov, A. Müller, T. Grasser: "Reliability of Scalable MoS2 FETs With 2 nm Crystalline CaF2 Insulators"; 2D Materials, 6, (2019), 045004 doi:10.1088/2053-1583/ab28f2. BibTeX |
| 183. | M. Jech, A.-M. El-Sayed, S. E. Tyaginov, A. Shluger, T. Grasser: "Ab Initio Treatment of Silicon-Hydrogen Bond Rupture at Si/SiO2 Interfaces"; Physical Review B, 100, (2019), 195302 doi:10.1103/PhysRevB.100.195302. BibTeX |
| 182. | M. Jech, B. Ullmann, G. Rzepa, S. E. Tyaginov, A. Grill, M. Waltl, D. Jabs, C. Jungemann, T. Grasser: "Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part II: Theory"; IEEE Transactions on Electron Devices, 66, (2019), 241 - 248 doi:10.1109/TED.2018.2873421. BibTeX |
| 181. | X. Jing, Yu. Illarionov, E. Yalon, P. Zhou, T. Grasser, Y. Shi, M. Lanza: "Engineering Field Effect Transistors with 2D Semiconducting Channels: Status and Prospects"; Advanced Functional Materials, 30, (2019), 1901971 doi:10.1002/adfm.201901971. BibTeX |
| 180. | A. Makarov, B. Kaczer, A. Chasin, M. Vandemaele, E. Bury, M. Jech, A. Grill, G. Hellings, A.-M. El-Sayed, T. Grasser, D. Linten, S. E. Tyaginov: "Bi-Modal Variability of nFinFET Characteristics During Hot-Carrier Stress: A Modeling Approach"; IEEE Electron Device Letters, 40, (2019), 1579 - 1582 doi:10.1109/LED.2019.2933729. BibTeX |
| 179. | A. Makarov, B. Kaczer, Ph. Roussel, A. Chasin, A. Grill, M. Vandemaele, G. Hellings, A.-M. El-Sayed, T. Grasser, D. Linten, S. E. Tyaginov: "Stochastic Modeling of the Impact of Random Dopants on Hot-Carrier Degradation in n-FinFETs"; IEEE Electron Device Letters, 40, (2019), 870 - 873 doi:10.1109/LED.2019.2913625. BibTeX |
| 178. | N. Oliva, Yu. Illarionov, E. Casu, M. Cavalieri, T. Knobloch, T. Grasser, A. Ionescu: "Hysteresis Dynamics in Double-Gated n-Type WSe2 FETs With High-k Top Gate Dielectric"; IEEE Journal of the Electron Devices Society, 7, (2019), 1163 - 1169 doi:10.1109/JEDS.2019.2933745. BibTeX |
| 177. | K. Puschkarsky, T. Grasser, T. Aichinger, W. Gustin, H. Reisinger: "Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage Instability"; IEEE Transactions on Electron Devices, 66, (invited) (2019), 4604 - 4616 doi:10.1109/TED.2019.2938262. BibTeX |
| 176. | K. Puschkarsky, H. Reisinger, G.A. Rott, C. Schluender, W. Gustin, T. Grasser: "An Efficient Analog Compact NBTI Model for Stress and Recovery Based on Activation Energy Maps"; IEEE Transactions on Electron Devices, 66, (2019), 4623 - 4630 doi:10.1109/TED.2019.2941889. BibTeX |
| 175. | A. Toifl, V. Simonka, A. Hössinger, S. Selberherr, T. Grasser, J. Weinbub: "Simulation of the Effects of Postimplantation Annealing on Silicon Carbide DMOSFET Characteristics"; IEEE Transactions on Electron Devices, 66, (2019), 3060 - 3065 doi:10.1109/TED.2019.2916929. BibTeX |
| 174. | B. Ullmann, M. Jech, K. Puschkarsky, G.A. Rott, M. Waltl, Yu. Illarionov, H. Reisinger, T. Grasser: "Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part I: Experimental"; IEEE Transactions on Electron Devices, 66, (2019), 232 - 240 doi:10.1109/TED.2018.2873419. BibTeX |
| 173. | B. Ullmann, K. Puschkarsky, M. Waltl, H. Reisinger, T. Grasser: "Evaluation of Advanced MOSFET Threshold Voltage Drift Measurement Techniques"; IEEE Transactions on Device and Materials Reliability, 19, (2019), 358 - 362 doi:10.1109/TDMR.2019.2909993. BibTeX |
| 172. | Z. Wu, J. Franco, A. Vandooren, B. Kaczer, Ph. Roussel, G. Rzepa, T. Grasser: "Improved PBTI Reliability in Junction-Less FET Fabricated at Low Thermal Budget for 3-D Sequential Integration"; IEEE Transactions on Device and Materials Reliability, 9, (2019), 262 - 267 doi:10.1109/TDMR.2019.2906843. BibTeX |
| 171. | A.-M. El-Sayed, M. Watkins, T. Grasser, A. Shluger: "Effect of Electric Field on Migration of Defects in Oxides: Vacancies and Interstitials in Bulk MgO"; Physical Review B, 98, (2018), 064102 doi:10.1103/PhysRevB.98.064102. BibTeX |
| 170. | W. Gös, Y. Wimmer, A.-M. El-Sayed, G. Rzepa, M. Jech, A. Shluger, T. Grasser: "Identification of Oxide Defects in Semiconductor Devices: A Systematic Approach Linking DFT to Rate Equations and Experimental Evidence"; Microelectronics Reliability, 87, (2018), 286 - 320 doi:10.1016/j.microrel.2017.12.021. BibTeX |
| 169. | B. Kaczer, J. Franco, P. Weckx, Ph. J. Roussel, V. Putcha, E. Bury, M. Simicic, A. Chasin, D. Linten, B. Parvais, F. Catthoor, G. Rzepa, M. Waltl, T. Grasser: "A Brief Overview of Gate Oxide Defect Properties and Their Relation to MOSFET Instabilities and Device and Circuit Time-Dependent Variability"; Microelectronics Reliability, 81, (invited) (2018), 186 - 194 doi:10.1016/j.microrel.2017.11.022. BibTeX |
| 168. | T. Knobloch, G. Rzepa, Yu. Illarionov, M. Waltl, F. Schanovski, B. Stampfer, M. M. Furchi, T. Müller, T. Grasser: "A Physical Model for the Hysteresis in MoS2 Transistors"; IEEE Journal of the Electron Devices Society, 6, (2018), 972 - 978 doi:10.1109/JEDS.2018.2829933. BibTeX |
| 167. | A. Makarov, S. E. Tyaginov, B. Kaczer, M. Jech, A. Chasin, A. Grill, G. Hellings, M. I. Vexler, D. Linten, T. Grasser: "Analysis of the Features of Hot-Carrier Degradation in FinFETs"; Semiconductors (Physics of Semiconductor Devices), 52, (2018), 1177 - 1182 doi:10.1134/S1063782618100081. BibTeX |
| 166. | K. Puschkarsky, H. Reisinger, T. Aichinger, W. Gustin, T. Grasser: "Understanding BTI in SiC MOSFETs and Its Impact on Circuit Operation"; IEEE Transactions on Device and Materials Reliability, 18, (2018), 144 - 153 doi:10.1109/TDMR.2018.2813063. BibTeX |
| 165. | K. Puschkarsky, H. Reisinger, W. Gustin, T. Grasser: "Voltage-Dependent Activation Energy Maps for Analytic Lifetime Modeling of NBTI Without Time Extrapolation"; IEEE Transactions on Electron Devices, 65, (2018), 4764 - 4771 doi:10.1109/TED.2018.2870170. BibTeX |
| 164. | G. Rescher, G. Pobegen, T. Aichinger, T. Grasser: "Comprehensive Evaluation of Bias Temperature Instabilities on 4H-SiC MOSFETs Using Device Preconditioning"; Materials Science Forum, 924, (2018), 671 - 675 doi:10.4028/www.scientific.net/MSF.924.671. BibTeX |
| 163. | G. Rescher, G. Pobegen, T. Aichinger, T. Grasser: "Preconditioned BTI on 4H-SiC: Proposal for a Nearly Delay Time-Independent Measurement Technique"; IEEE Transactions on Electron Devices, 25, (2018), 1419 - 1426 doi:10.1109/TED.2018.2803283. BibTeX |
| 162. | G. Rzepa, J. Franco, B.J. O´Sullivan, A. Subirats, M. Simicic, G. Hellings, P. Weckx, M. Jech, T. Knobloch, M. Waltl, P. Roussel, D. Linten, B. Kaczer, T. Grasser: "Comphy -- A Compact-Physics Framework for Unified Modeling of BTI"; Microelectronics Reliability, 85, (invited) (2018), 49 - 65 doi:10.1016/j.microrel.2018.04.002. BibTeX |
| 161. | B. Stampfer, F. Zhang, Yu. Illarionov, T. Knobloch, P. Wu, M. Waltl, A. Grill, J. Appenzeller, T. Grasser: "Characterization of Single Defects in Ultrascaled MoS2 Field-Effect Transistors"; ACS Nano, 12, (2018), 5368 - 5375 doi:10.1021/acsnano.8b00268. BibTeX |
| 160. | J. Stathis, S. Mahapatra, T. Grasser: "Controversial Issues in Negative Bias Temperature Instability"; Microelectronics Reliability, 81, (2018), 244 - 251 doi:10.1016/j.microrel.2017.12.035. BibTeX |
| 159. | S. E. Tyaginov, A. Makarov, M. Jech, M. I. Vexler, J. Franco, B. Kaczer, T. Grasser: "Physical Principles of Self-Consistent Simulation of the Generation of Interface States and the Transport of Hot Charge Carriers in Field-Effect Transistors Based on Metal-Oxide-Semiconductor Structures"; Semiconductors (Physics of Semiconductor Devices), 52, (2018), 242 - 247 doi:10.1134/S1063782618020203. BibTeX |
| 158. | S. E. Tyaginov, A. Makarov, B. Kaczer, M. Jech, A. Chasin, A. Grill, G. Hellings, M. I. Vexler, D. Linten, T. Grasser: "Impact of the Device Geometric Parameters on Hot-Carrier Degradation in FinFETs"; Semiconductors (Physics of Semiconductor Devices), 52, (2018), 1738 - 1742 doi:10.1134/S1063782618130183. BibTeX |
| 157. | Yu. Illarionov, T. Knobloch, M. Waltl, G. Rzepa, A. Pospischil, D.K Polyushkin, M. M. Furchi, T. Müller, T. Grasser: "Energetic Mapping of Oxide Traps in MoS2 Field-Effect Transistors"; 2D Materials, 4, (2017), 025108-1 - 025108-10 doi:10.1088/2053-1583/aa734a. BibTeX |
| 156. | Yu. Illarionov, K. Smithe, M. Waltl, T. Knobloch, E. Pop, T. Grasser: "Improved Hysteresis and Reliability of MoS2 Transistors With High-Quality CVD Growth and Al2O3 Encapsulation"; IEEE Electron Device Letters, 38, (2017), 1763 - 1766 doi:10.1109/LED.2017.2768602. BibTeX |
| 155. | Yu. Illarionov, M. Waltl, G. Rzepa, T. Knobloch, J. Kim, D. Akinwande, T. Grasser: "Highly-Stable Black Phosphorus Field-Effect Transistors with Low Density of Oxide Traps"; npj 2D Materials and Applications, 1, (2017), 23-1 - 23-7 doi:10.1038/s41699-017-0025-3. BibTeX |
| 154. | B. Kaczer, J. Franco, S. E. Tyaginov, M. Jech, G. Rzepa, T. Grasser, B.J. O´Sullivan, R. Ritzenhaler, T. Schram, A. Spessot, D. Linten, N. Horiguchi: "Mapping of CMOS FET Degradation in Bias Space--Application to Dram Peripheral Devices"; Journal of Vacuum Science & Technology B, 35, (2017), 01A109-1 - 01A109-6 doi:10.1116/1.4972872. BibTeX |
| 153. | C. Ostermaier, P. Lagger, G. Prechtl, A. Grill, T. Grasser, D. Pogany: "Dynamics of Carrier Transport via AlGaN Barrier in AlGaN/GaN MIS-HEMTs"; Applied Physics Letters, 110, (2017), 1 - 4 doi:10.1063/1.4982231. BibTeX |
| 152. | G. Rescher, G. Pobegen, T. Aichinger, T. Grasser: "Improved Interface Trap Density Close to the Conduction Band Edge of a-Face 4H-SiC MOSFETs Revealed Using the Charge Pumping Technique"; Materials Science Forum, 897, (2017), 143 - 146 doi:10.4028/www.scientific.net/MSF.897.143. BibTeX |
| 151. | P. Sharma, S. E. Tyaginov, S. E. Rauch, J. Franco, A. Makarov, M. I. Vexler, B. Kaczer, T. Grasser: "Hot-Carrier Degradation Modeling of Decananometer nMOSFETs Using the Drift-Diffusion Approach"; IEEE Electron Device Letters, 38, (2017), 160 - 163 doi:10.1109/LED.2016.2645901. BibTeX |
| 150. | X. Song, F. Hui, T. Knobloch, B. Wang, Z. Fan, T. Grasser, X. Jing, Y. Shi, M. Lanza: "Piezoelectricity in Two Dimensions: Graphene vs. Molybdenum Disulfide"; Applied Physics Letters, 111, (2017), 083107-1 - 083107-4 doi:10.1063/1.5000496. BibTeX |
| 149. | R. Stradiotto, G. Pobegen, C. Ostermaier, M. Waltl, A. Grill, T. Grasser: "Characterization of Interface Defects With Distributed Activation Energies in GaN-Based MIS-HEMTs"; IEEE Transactions on Electron Devices, 64, (2017), 1045 - 1052 doi:10.1109/TED.2017.2655367. BibTeX |
| 148. | B. Ullmann, T. Grasser: "Transformation: Nanotechnology - Challenges in Transistor Design and Future Technologies"; E&I Elektrotechnik und Informationstechnik, 134, (2017), 349 - 354 doi:10.1007/s00502-017-0534-y. BibTeX |
| 147. | M. Waltl, G. Rzepa, A. Grill, W. Gös, J. Franco, B. Kaczer, L. Witters, J. Mitard, N. Horiguchi, T. Grasser: "Superior NBTI in High-k SiGe Transistors - Part I: Experimental"; IEEE Transactions on Electron Devices, 64, (2017), 2092 - 2098 doi:10.1109/TED.2017.2686086. BibTeX |
| 146. | M. Waltl, G. Rzepa, A. Grill, W. Gös, J. Franco, B. Kaczer, L. Witters, J. Mitard, N. Horiguchi, T. Grasser: "Superior NBTI in High-k SiGe Transistors - Part II: Theory"; IEEE Transactions on Electron Devices, 64, (2017), 2099 - 2105 doi:10.1109/TED.2017.2686454. BibTeX |
| 145. | Yu. Illarionov, G. Rzepa, M. Waltl, T. Knobloch, A. Grill, M. M. Furchi, T. Müller, T. Grasser: "The Role of Charge Trapping in MoS2/SiO2 and MoS2/hBN Field-Effect Transistors"; 2D Materials, 3, (2016), 035004-1 - 035004-10 doi:10.1088/2053-1583/3/3/035004. BibTeX |
| 144. | Yu. Illarionov, M. Waltl, G. Rzepa, J. Kim, S. Kim, A. Dodabalapur, D. Akinwande, T. Grasser: "Long-Term Stability and Reliability of Black Phosphorus Field-Effect Transistors"; ACS Nano, 10, (2016), 9543 - 9549 doi:10.1021/acsnano.6b04814. BibTeX |
| 143. | Yu. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, M. Lemme, T. Grasser: "Bias-Temperature Instability on the Back Gate of Single-Layer Double-Gated Graphene Field-Effect Transistors"; Japanese Journal of Applied Physics, 55, (2016), 04EP03 doi:10.7567/JJAP.55.04EP03. BibTeX |
| 142. | M. Jech, P. Sharma, S. E. Tyaginov, F. Rudolf, T. Grasser: "On the Limits of Applicability of Drift-Diffusion Based Hot Carrier Degradation Modeling"; Japanese Journal of Applied Physics, 55, (2016), 1 - 6 doi:10.7567/JJAP.55.04ED14. BibTeX |
| 141. | X. Jing, E. Panholzer, X. Song, E. Grustan-Gutierrez, F. Hui, Y. Shi, G. Benstetter, Yu. Illarionov, T. Grasser, M. Lanza: "Fabrication of Scalable and Ultra Low Power Photodetectors with High Light/Dark Current Ratios Using Polycrystalline Monolayer MoS2 Sheets"; Nano Energy, 30, (2016), 494 - 502 doi:10.1016/j.nanoen.2016.10.032. BibTeX |
| 140. | B. Kaczer, J. Franco, P. Weckx, Ph. J. Roussel, M. Simicic, V. Putcha, E. Bury, M. Cho, R. Degraeve, D. Linten, G. Groeseneken, P. Debacker, B. Parvais, P. Raghavan, F. Catthoor, G. Rzepa, M. Waltl, W. Gös, T. Grasser: "The Defect-Centric Perspective of Device and Circuit Reliability - From Gate Oxide Defects to Circuits"; Solid-State Electronics, 125, (2016), 52 - 62 doi:10.1016/j.sse.2016.07.010. BibTeX |
| 139. | G. Rescher, G. Pobegen, T. Grasser: "Threshold Voltage Instabilities of Present SiC-Power MOSFETs Under Positive Bias Temperature Stress"; Materials Science Forum, 858, (2016), 481 - 484 doi:10.4028/www.scientific.net/MSF.858.481. BibTeX |
| 138. | K. Rupp, C. Jungemann, S.-M Hong, M. Bina, T. Grasser, A. Jüngel: "A Review of Recent Advances in the Spherical Harmonics Expansion Method for Semiconductor Device Simulation"; Journal of Computational Electronics, 15, (2016), 939 - 958 doi:10.1007/s10825-016-0828-z. BibTeX |
| 137. | K. Rupp, Ph. Tillet, F. Rudolf, J. Weinbub, A. Morhammer, T. Grasser, A. Jüngel, S. Selberherr: "ViennaCL---Linear Algebra Library for Multi- and Many-Core Architectures"; SIAM Journal on Scientific Computing, 38, (2016), S412 - S439 doi:10.1137/15M1026419. BibTeX |
| 136. | K. Rupp, J. Weinbub, A. Jüngel, T. Grasser: "Pipelined Iterative Solvers with Kernel Fusion for Graphics Processing Units"; ACM Transactions on Mathematical Software, 43, (2016), 11:1 - 11:27 doi:10.1145/2907944. BibTeX |
| 135. | P. Sharma, S. E. Tyaginov, M. Jech, Y. Wimmer, F. Rudolf, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser: "The Role of Cold Carriers and the Multiple-Carrier Process of Si-H Bond Dissociation for Hot-Carrier Degradation in n- and p-channel LDMOS Devices"; Solid-State Electronics, 115, (2016), 185 - 191 doi:10.1016/j.sse.2015.08.014. BibTeX |
| 134. | R. Stradiotto, G. Pobegen, C. Ostermaier, T. Grasser: "Characterization of Charge Trapping Phenomena at III-N/Dielectric Interfaces"; Solid-State Electronics, 125, (2016), 142 - 153 doi:10.1016/j.sse.2016.07.017. BibTeX |
| 133. | S. E. Tyaginov, M. Jech, J. Franco, P. Sharma, B. Kaczer, T. Grasser: "Understanding and Modeling the Temperature Behavior of Hot-Carrier Degradation in SiON n-MOSFETs"; IEEE Electron Device Letters, 37, (2016), 84 - 87 doi:10.1109/LED.2015.2503920. BibTeX |
| 132. | Y. Wimmer, A.-M. El-Sayed, W. Gös, T. Grasser, A. Shluger: "Role of Hydrogen in Volatile Behaviour of Defects in SiO2-Based Electronic Devices"; Proceedings of the Royal Society A - Mathematical, Physical and Engineering Sciences, 472, (invited) (2016), 1 - 23 doi:10.1098/rspa.2016.0009. BibTeX |
| 131. | R. Coppeta, D. Holec, H. Ceric, T. Grasser: "Evaluation of Dislocation Energy in Thin Films"; Philosophical Magazine, 95, (2015), 186 - 209 doi:10.1080/14786435.2014.994573. BibTeX |
| 130. | A. El-Sayed, M. Watkins, T. Grasser, V. Afanas´Ev, A. Shluger: "Hole Trapping at Hydrogenic Defects in Amorphous Silicon Dioxide"; Microelectronic Engineering, 147, (2015), 141 - 144 doi:10.1016/j.mee.2015.04.073. BibTeX |
| 129. | A. El-Sayed, M. Watkins, T. Grasser, V. Afanas´Ev, A. Shluger: "Hydrogen-Induced Rupture of Strained Si-O Bonds in Amorphous Silicon Dioxide"; Physical Review Letters, 114, (2015), 115503-1 - 115503-5 doi:10.1103/PhysRevLett.114.115503. BibTeX |
| 128. | A. El-Sayed, Y. Wimmer, W. Gös, T. Grasser, V. Afanas´Ev, A. Shluger: "Theoretical Models of Hydrogen-Induced Defects in Amorphous Silicon Dioxide"; Physical Review B, 92, (2015), 014107-1 - 014107-11 doi:10.1103/PhysRevB.92.014107. BibTeX |
| 127. | Yu. Illarionov, M. Bina, S. E. Tyaginov, K. Rott, B. Kaczer, H. Reisinger, T. Grasser: "Extraction of the Lateral Position of Border Traps in Nanoscale MOSFETs"; IEEE Transactions on Electron Devices, 62, (2015), 2730 - 2737 doi:10.1109/TED.2015.2454433. BibTeX |
| 126. | Yu. Illarionov, A. Smith, S. Vaziri, M. Ostling, T. Müller, M. Lemme, T. Grasser: "Hot-Carrier Degradation and Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors: Similarities and Differences"; IEEE Transactions on Electron Devices, 62, (2015), 3876 - 3881 doi:10.1109/TED.2015.2480704. BibTeX |
| 125. | Yu. Illarionov, M. I. Vexler, M. Karner, S. E. Tyaginov, J. Cervenka, T. Grasser: "TCAD Simulation of Tunneling Leakage Current in CaF2/Si(111) MIS Structures"; Current Applied Physics, 15, (2015), 78 - 83 doi:10.1016/j.cap.2014.10.015. BibTeX |
| 124. | B. Kaczer, J. Franco, Ph. J. Roussel, G. Groeseneken, T. Chiarella, N. Horiguchi, T. Grasser: "Extraction of The Random Component of Time-Dependent Variability Using Matched Pairs"; IEEE Electron Device Letters, 36, (2015), 300 - 302 doi:10.1109/LED.2015.2404293. BibTeX |
| 123. | P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, K. Rupp, M. Bina, H. Enichlmair, J.M. Park, R. Minixhofer, H. Ceric, T. Grasser: "Modeling of Hot-Carrier Degradation in nLDMOS Devices: Different Approaches to the Solution of the Boltzmann Transport Equation"; IEEE Transactions on Electron Devices, 62, (2015), 1811 - 1818 doi:10.1109/TED.2015.2421282. BibTeX |
| 122. | P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, K. Rupp, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser: "Comparison of Analytic Distribution Function Models for Hot-Carrier Degradation in nLDMOSFETs"; Microelectronics Reliability, 55, (2015), 1427 - 1432 doi:10.1016/j.microrel.2015.06.021. BibTeX |
| 121. | S. E. Tyaginov, M. Bina, J. Franco, Y. Wimmer, B. Kaczer, T. Grasser: "On the Importance of Electron-Electron Scattering for Hot-Carrier Degradation"; Japanese Journal of Applied Physics, 54, (2015), 1 - 6 doi:10.7567/JJAP.54.04DC18. BibTeX |
| 120. | M. I. Vexler, Yu. Illarionov, S. E. Tyaginov, T. Grasser: "Adaptation of the Model of Tunneling in a Metal/CaF2/Si(111) System for Use in Industrial Simulators of MIS Devices"; Semiconductors (Physics of Semiconductor Devices), 49, (2015), 259 - 263 doi:10.1134/S1063782615020207. BibTeX |
| 119. | M. Bina, S. E. Tyaginov, J. Franco, K. Rupp, Y. Wimmer, D. Osintsev, B. Kaczer, T. Grasser: "Predictive Hot-Carrier Modeling of n-Channel MOSFETs"; IEEE Transactions on Electron Devices, 61, (2014), 3103 - 3110 doi:10.1109/TED.2014.2340575. BibTeX |
| 118. | V. V. A. Camargo, B. Kaczer, T. Grasser, G. Wirth: "Circuit Simulation of Workload-Dependent RTN and BTI Based on Trap Kinetics"; Microelectronics Reliability, 54, (2014), 2364 - 2370. BibTeX |
| 117. | T. Grasser, K. Rott, H. Reisinger, M. Waltl, F. Schanovsky, B. Kaczer: "NBTI in Nanoscale MOSFETs-The Ultimate Modeling Benchmark"; IEEE Transactions on Electron Devices, 61, (2014), 3586 - 3593 doi:10.1109/TED.2014.2353578. BibTeX |
| 116. | Yu. Illarionov, M. Bina, S. E. Tyaginov, T. Grasser: "An Analytical Approach for the Determination of the Lateral Trap Position in Ultra-Scaled MOSFETs"; Japanese Journal of Applied Physics, 53, (2014), 04EC22-1 - 04EC22-4 doi:10.7567/JJAP.53.04EC22. BibTeX |
| 115. | Yu. Illarionov, A. Smith, S. Vaziri, M. Ostling, T. Müller, M. Lemme, T. Grasser: "Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors"; Applied Physics Letters, 105, (2014), 1435071 - 1435075 doi:10.1063/1.4897344. BibTeX |
| 114. | G. Pobegen, T. Aichinger, A. Salinaro, T. Grasser: "Impact of Hot Carrier Degradation and Positive Bias Temperature Stress on Lateral 4H-SiC nMOSFETs"; Materials Science Forum, 778-780, (2014), 959 - 962 doi:10.4028/www.scientific.net/MSF.778-780.959. BibTeX |
| 113. | G.A. Rott, K. Rott, H. Reisinger, W. Gustin, T. Grasser: "Mixture of Negative Bias Temperature Instability and Hot-Carrier Driven Threshold Voltage Degradation of 130 nm Technology p-Channel Transistors"; Microelectronics Reliability, 54, (2014), 2310 - 2314 doi:10.1016/j.microrel.2014.07.040. BibTeX |
| 112. | K. Rupp, Ph. Tillet, A. Jüngel, T. Grasser: "Achieving Portable High Performance for Iterative Solvers on Accelerators"; Proceedings in Applied Mathematics and Mechanics, 14, (2014), 963 - 964 doi:10.1002/pamm.201410462. BibTeX |
| 111. | S. E. Tyaginov, Yu. Illarionov, M. I. Vexler, M. Bina, J. Cervenka, J. Franco, B. Kaczer, T. Grasser: "Modeling of Deep-Submicron Silicon-Based MISFETs with Calcium Fluoride Dielectric"; Journal of Computational Electronics, 13, (2014), 733 - 738 doi:10.1007/s10825-014-0593-9. BibTeX |
| 110. | S. E. Tyaginov, Y. Wimmer, T. Grasser: "Modeling of Hot-Carrier Degradation Based on Thorough Carrier Transport Treatment"; Facta Universitatis, 27, (invited) (2014), 479 - 508 doi:10.2298/FUEE1404479T. BibTeX |
| 109. | T. Aichinger, M. Nelhiebel, T. Grasser: "Refined NBTI Characterization of Arbitrarily Stressed PMOS Devices at Ultra-low and Unique Temperatures"; Microelectronics Reliability, 53, (2013), 937 - 946 doi:10.1016/j.microrel.2013.03.007. BibTeX |
| 108. | V. V. A. Camargo, B. Kaczer, G. Wirth, T. Grasser, G. Groeseneken: "Use of SSTA Tools for Evaluating BTI Impact on Combinational Circuits"; IEEE Transactions on Very Large Scale Integration (VLSI) Systems, PP, (2013), doi:10.1109/TVLSI.2013.2240323. BibTeX |
| 107. | J. Franco, B. Kaczer, J. Mitard, M. Toledano-Luque, Ph. J. Roussel, L. Witters, T. Grasser, G Groeseneken: "NBTI Reliability of SiGe and Ge Channel pMOSFETs With SiO2/HfO2 Dielectric Stack"; IEEE Transactions on Device and Materials Reliability, 13, (invited) (2013), 497 - 506 doi:10.1109/TDMR.2013.2281731. BibTeX |
| 106. | J. Franco, B. Kaczer, Ph. J. Roussel, J. Mitard, M. Cho, L. Witters, T. Grasser, G. Groeseneken: "SiGe Channel Technology: Superior Reliability Toward Ultrathin EOT Devices-Part I: NBTI"; IEEE Transactions on Electron Devices, 60, (2013), 396 - 404 doi:10.1109/TED.2012.2225625. BibTeX |
| 105. | J. Franco, B. Kaczer, M. Toledano-Luque, Ph. J. Roussel, M. Choa, T. Kauerauf, J. Mitard, G. Eneman, L. Witters, T. Grasser, G. Groeseneken: "Superior Reliability of High Mobility (Si)Ge Channel pMOSFETs"; Microelectronic Engineering, 109, (2013), 250 - 256 doi:10.1016/j.mee.2013.03.001. BibTeX |
| 104. | J. Franco, B. Kaczer, M. Toledano-Luque, Ph. J. Roussel, T. Kauerauf, J. Mitard, L. Witters, T. Grasser, G. Groeseneken: "SiGe Channel Technology: Superior Reliability Toward Ultra-Thin EOT Devices-Part II: Time-Dependent Variability in Nanoscaled Devices and Other Reliability Issues"; IEEE Transactions on Electron Devices, 60, (2013), 405 - 412. BibTeX |
| 103. | B. Kaczer, M. Toledano-Luque, W. Gös, T. Grasser, G. Groeseneken: "Gate Current Random Telegraph Noise and Single Defect Conduction"; Microelectronic Engineering, 109, (2013), 123 - 125 doi:10.1016/j.mee.2013.03.110. BibTeX |
| 102. | G. Pobegen, T. Grasser: "Efficient Characterization of Threshold Voltage Instabilities in SiC nMOSFETs Using the Concept of Capture-Emission-Time Maps"; Materials Science Forum, 740-742, (2013), 757 - 760 doi:10.4028/www.scientific.net/MSF.740-742.757. BibTeX |
| 101. | G. Pobegen, T. Grasser: "On the Distribution of NBTI Time Constants on a Long, Temperature-Accelerated Time Scale"; IEEE Transactions on Electron Devices, 60, (2013), 2148 - 2155 doi:10.1109/TED.2013.2264816. BibTeX |
| 100. | G. Pobegen, M. Nelhiebel, S. de Filippis, T. Grasser: "Accurate High Temperature Measurements Using Local Polysilicon Heater Structures"; IEEE Transactions on Device and Materials Reliability, 99, (2013), 1 - 8 doi:10.1109/TDMR.2013.2265015. BibTeX |
| 99. | G. Pobegen, S. E. Tyaginov, M. Nelhiebel, T. Grasser: "Observation of Normally Distributed Energies for Interface Trap Recovery After Hot-Carrier Degradation"; IEEE Electron Device Letters, 34, (2013), 939 - 941 doi:10.1109/LED.2013.2262521. BibTeX |
| 98. | M. Toledano-Luque, B. Kaczer, T. Grasser, Ph. J. Roussel, J. Franco, G. Groeseneken: "Toward a Streamlined Projection of Small Device Bias Temperature Instability Lifetime Distributions"; Journal of Vacuum Science & Technology B, 31, (2013), 01A114-1 - 01A114-4 doi:10.1116/1.4772587. BibTeX |
| 97. | J. Franco, S. Graziano, B. Kaczer, F. Crupi, L. Ragnarsson, T. Grasser, G. Groeseneken: "BTI Reliability of Ultra-Thin EOT MOSFETs for Sub-Threshold Logic"; Microelectronics Reliability, 52, (2012), 1932 - 1935 doi:10.1016/j.microrel.2012.06.058. BibTeX |
| 96. | J. Franco, B. Kaczer, M. Toledano-Luque, M. F. Bukhori, Ph. J. Roussel, T. Grasser, A. Asenov, G. Groeseneken: "Impact of Individual Charged Gate-Oxide Defects on the Entire ID -VG Characteristic of Nanoscaled FETs"; IEEE Electron Device Letters, 33, (2012), 779 - 781. BibTeX |
| 95. | T. Grasser: "Stochastic Charge Trapping in Oxides: From Random Telegraph Noise to Bias Temperature Instabilities"; Microelectronics Reliability, 52, (invited) (2012), 39 - 70 doi:10.1016/j.microrel.2011.09.002. BibTeX |
| 94. | K. Rott, H. Reisinger, S. Aresu, C. Schlünder, K. Kölpin, W. Gustin, T. Grasser: "New Insights on the PBTI Phenomena in SiON pMOSFETs"; Microelectronics Reliability, 52, (2012), 1891 - 1894 doi:10.1016/j.microrel.2012.06.015. BibTeX |
| 93. | F. Schanovsky, O. Baumgartner, V. Sverdlov, T. Grasser: "A Multi Scale Modeling Approach to Non-Radiative Multi Phonon Transitions at Oxide Defects in MOS Structures"; Journal of Computational Electronics, 11, (2012), 218 - 224 doi:10.1007/s10825-012-0403-1. BibTeX |
| 92. | M. Toledano-Luque, B. Kaczer, J. Franco, Ph. J. Roussel, T. Grasser, G. Groeseneken: "Defect-Centric Perspective of Time-Dependent BTI Variability"; Microelectronics Reliability, 52, (2012), 1883 - 1890 doi:10.1016/j.microrel.2012.06.120. BibTeX |
| 91. | M. Vasicek, J. Cervenka, D. Esseni, P. Palestri, T. Grasser: "Applicability of Macroscopic Transport Models to Decananometer MOSFETs"; IEEE Transactions on Electron Devices, 59, (2012), 639 - 646 doi:10.1109/TED.2011.2181177. BibTeX |
| 90. | J. Franco, B. Kaczer, M. Toledano-Luque, Ph. J. Roussel, Ph. Hehenberger, T. Grasser, J. Mitard, G. Eneman, T. Y. Hoffmann, G. Groeseneken: "On the Impact of the Si Passivation Layer Thickness on the NBTI of Nanoscaled Si0.45Ge0.55 pMOSFETs"; Microelectronic Engineering, 88, (2011), 1388 - 1391 doi:10.1016/j.mee.2011.03.065. BibTeX |
| 89. | W. Gös, F. Schanovsky, H. Reisinger, B. Kaczer, T. Grasser: "Bistable Defects as the Cause for NBTI and RTN"; Solid State Phenomena, 178-179, (invited) (2011), 473 - 482 doi:10.4028/www.scientific.net/SSP.178-179.473. BibTeX |
| 88. | T. Grasser, B. Kaczer, W. Gös, H. Reisinger, T. Aichinger, Ph. Hehenberger, P.-J. Wagner, F. Schanovsky, J. Franco, M. Toledano-Luque, M. Nelhiebel: "The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction-Diffusion to Switching Oxide Traps"; IEEE Transactions on Electron Devices, 58, (invited) (2011), 3652 - 3666. BibTeX |
| 87. | B. Kaczer, T. Grasser, J. Franco, M. Toledano-Luque, Ph. J. Roussel, M. Cho, E. Simoen, G. Groeseneken: "Recent Trends in Bias Temperature Instability"; Journal of Vacuum Science & Technology B, 29, (invited) (2011), 01AB01-1 - 01AB01-7. BibTeX |
| 86. | G. Pobegen, T. Aichinger, T. Grasser, M. Nelhiebel: "Impact of Gate Poly Doping and Oxide Thickness on the N- and PBTI in MOSFETs"; Microelectronics Reliability, 51, (2011), 1530 - 1534 doi:10.1016/j.microrel.2011.06.024. BibTeX |
| 85. | F. Schanovsky, W. Gös, T. Grasser: "Multiphonon Hole Trapping from First Principles"; Journal of Vacuum Science & Technology B, 29, (2011), 01A201-1 - 01A201-5 doi:10.1116/1.3533269. BibTeX |
| 84. | I. Starkov, S. E. Tyaginov, H. Enichlmair, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Ceric, T. Grasser: "Hot-Carrier Degradation Caused Interface State Profile-Simulation versus Experiment"; Journal of Vacuum Science & Technology B, 29, (2011), 01AB09-1 - 01AB09-8 doi:10.1116/1.3534021. BibTeX |
| 83. | I. Starkov, S. E. Tyaginov, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser: "Accurate Extraction of MOSFET Unstressed Interface State Spatial Distribution from Charge Pumping Measurements"; Solid State Phenomena, 178-179, (2011), 267 - 272 doi:10.4028/www.scientific.net/SSP.178-179.267. BibTeX |
| 82. | M. Toledano-Luque, B. Kaczer, Ph. J. Roussel, M. Cho, T. Grasser, G. Groeseneken: "Temperature Dependence of the Emission and Capture Times of SiON Individual Traps after Positive Bias Temperature Stress"; Journal of Vacuum Science & Technology B, 29, (2011), 01AA04-1 - 01AA04-5 doi:10.1116/1.3532947. BibTeX |
| 81. | M. Toledano-Luque, B. Kaczer, Ph. J. Roussel, J. Franco, L. Ragnarsson, T. Grasser, G. Groeseneken: "Depth Localization of Positive Charge Trapped in Silicon Oxynitride Field Effect Transistors after Positive and Negative Gate Bias Temperature Stress"; Applied Physics Letters, 98, (2011), 183506-1 - 183506-3 doi:10.1063/1.3586780. BibTeX |
| 80. | M. Toledano-Luque, B. Kaczer, E. Simoen, Ph. J. Roussel, A. Veloso, T. Grasser, G. Groeseneken: "Temperature and Voltage Dependences of the Capture and Emission Times of Individual Traps in High-k Dielectrics"; Microelectronic Engineering, 88, (2011), 1243 - 1246 doi:10.1016/j.mee.2011.03.097. BibTeX |
| 79. | S. E. Tyaginov, I. Starkov, H. Enichlmair, C. Jungemann, J.M. Park, E. Seebacher, R. Orio, H. Ceric, T. Grasser: "An Analytical Approach for Physical Modeling of Hot-Carrier Induced Degradation"; Microelectronics Reliability, 51, (2011), 1525 - 1529 doi:10.1016/j.microrel.2011.07.089. BibTeX |
| 78. | T. Aichinger, M. Nelhiebel, S. Einspieler, T. Grasser: "In Situ Poly Heater-A Reliable Tool for Performing Fast and Defined Temperature Switches on Chip"; IEEE Transactions on Device and Materials Reliability, 10, (2010), 3 - 8. BibTeX |
| 77. | T. Aichinger, M. Nelhiebel, S. Einspieler, T. Grasser: "Observing Two Stage Recovery of Gate Oxide Damage Created under Negative Bias Temperature Stress"; Journal of Applied Physics, 107, (2010), 024508-1 - 024508-8. BibTeX |
| 76. | T. Aichinger, M. Nelhiebel, T. Grasser: "Energetic Distribution of Oxide Traps created under Negative Bias Temperature Stress and their Relation to Hydrogen"; Applied Physics Letters, 96, (2010), 133511-1 - 133511-3. BibTeX |
| 75. | T. Grasser, H. Reisinger, P.-J. Wagner, B. Kaczer: "Time-Dependent Defect Spectroscopy for Characterization of Border Traps in Metal-Oxide-Semiconductor Transistors"; Physical Review B, 82, (2010), 245318-1 - 245318-10 doi:10.1103/PhysRevB.82.245318. BibTeX |
| 74. | B. Kaczer, Ph. J. Roussel, T. Grasser, G. Groeseneken: "Statistics of Multiple Trapped Charges in the Gate Oxide of Deeply Scaled MOSFET Devices-Application to NBTI"; IEEE Electron Device Letters, 31, (2010), 411 - 413 doi:10.1109/LED.2010.2044014. BibTeX |
| 73. | K. Rupp, A. Jüngel, T. Grasser: "Matrix Compression for Spherical Harmonics Expansions of the Boltzmann Transport Equation for Semiconductors"; Journal of Computational Physics, 229, (2010), 8750 - 8765. BibTeX |
| 72. | J. Ryan, P. Lenahan, T. Grasser, H. Enichlmair: "Observations of Negative Bias Temperature Instability Defect Generation via On The Fly Electron Spin Resonance"; Applied Physics Letters, 96, (2010), 223509-1 - 223509-3 doi:10.1063/1.3428783. BibTeX |
| 71. | F. Schanovsky, W. Gös, T. Grasser: "An Advanced Description of Oxide Traps in MOS Transistors and its Relation to DFT"; Journal of Computational Electronics, 9, (invited) (2010), 135 - 140 doi:10.1007/s10825-010-0323-x. BibTeX |
| 70. | S. E. Tyaginov, I. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser: "Interface Traps Density-of-States as a Vital Component for Hot-Carrier Degradation Modeling"; Microelectronics Reliability, 50, (2010), 1267 - 1272 doi:10.1016/j.microrel.2010.0. BibTeX |
| 69. | T. Aichinger, M. Nelhiebel, T. Grasser: "A Combined Study of p- and n-Channel MOS Devices to Investigate the Energetic Distribution of Oxide Traps After NBTI"; IEEE Transactions on Electron Devices, 56, (2009), 3018 - 3026. BibTeX |
| 68. | T. Grasser, B. Kaczer: "Evidence That Two Tightly Coupled Mechanisms Are Responsible for Negative Bias Temperature Instability in Oxynitride MOSFETs"; IEEE Transactions on Electron Devices, 56, (2009), 1056 - 1062 doi:10.1109/TED.2009.2015160. BibTeX |
| 67. | T. Grasser, B. Kaczer, W. Gös, T. Aichinger, Ph. Hehenberger, M. Nelhiebel: "Understanding Negative Bias Temperature Instability in the Context of Hole Trapping"; Microelectronic Engineering, 86, (invited) (2009), 1876 - 1882. BibTeX |
| 66. | Ph. Hehenberger, P.-J. Wagner, H. Reisinger, T. Grasser: "On the Temperature and Voltage Dependence of Short-Term Negative Bias Temperature Stress"; Microelectronics Reliability, 49, (2009), 1013 - 1017 doi:10.1016/j.microrel.2009.06.040. BibTeX |
| 65. | B. Kaczer, A. Veloso, Ph. J. Roussel, T. Grasser, G. Groeseneken: "Investigation of Bias-Temperature Instability in Work-Function-Tuned High-k/Metal-Gate Stacks"; Journal of Vacuum Science & Technology B, 27, (2009), 459 - 462. BibTeX |
| 64. | H. Reisinger, R. Vollertsen, P.-J. Wagner, T. Huttner, A. Martin, S. Aresu, W. Gustin, T. Grasser, C. Schlünder: "A Study of NBTI and Short-Term Threshold Hysteresis of Thin Nitrided and Thick Non-Nitrided Oxides"; IEEE Transactions on Device and Materials Reliability, 9, (2009), 106 - 114 doi:10.1109/TDMR.2009.2021389. BibTeX |
| 63. | S. E. Tyaginov, V. Sverdlov, I. Starkov, W. Gös, T. Grasser: "Impact of O-Si-O Bond Angle Fluctuations on the Si-O Bond-Breakage Rate"; Microelectronics Reliability, 49, (2009), 998 - 1002 doi:10.1016/j.microrel.2009.06.018. BibTeX |
| 62. | S. E. Tyaginov, M. Vexler, N. S. Sokolov, S. M. Suturin, A. Banshchikov, T. Grasser, B. Meinerzhagen: "Determination of Correlation Length for Thickness Fluctuations in Thin Oxide and Fluoride Films"; Journal of Physics D: Applied Physics, 42, (2009), 1 - 6 doi:10.1088/0022-3727/42/11/115307. BibTeX |
| 61. | M. Vexler, N. S. Sokolov, S. M. Suturin, A. Banshchikov, S. E. Tyaginov, T. Grasser: "Electrical Characterization and Modeling of the Au/CaF2/nSi(111) Sructures with High-Quality Tunnel-Thin Fluoride Layer"; Journal of Applied Physics, 105, (2009), 1 - 6 doi:10.1063/1.3110066. BibTeX |
| 60. | T. Aichinger, M. Nelhiebel, T. Grasser: "On the Temperature Dependence of NBTI Recovery"; Microelectronics Reliability, 48, (2008), 1178 - 1184 doi:10.1016/j.microrel.2008.06.018. BibTeX |
| 59. | W. Gös, M. Karner, V. Sverdlov, T. Grasser: "Charging and Discharging of Oxide Defects in Reliability Issues"; IEEE Transactions on Device and Materials Reliability, 8, (2008), 491 - 500 doi:10.1109/TDMR.2008.2005247. BibTeX |
| 58. | T. Grasser, W. Gös, B. Kaczer: "Dispersive Transport and Negative Bias Temperature Instability: Boundary Conditions, Initial Conditions, and Transport Models"; IEEE Transactions on Device and Materials Reliability, 8, (invited) (2008), 79 - 97 doi:10.1109/TDMR.2007.912779. BibTeX |
| 57. | T. Grasser, P.-J. Wagner, Ph. Hehenberger, W. Gös, B. Kaczer: "A Rigorous Study of Measurement Techniques for Negative Bias Temperature Instability"; IEEE Transactions on Device and Materials Reliability, 8, (2008), 526 - 535 doi:10.1109/TDMR.2008.2002353. BibTeX |
| 56. | P. Lenahan, B. Knowlton, J. Conley, B. Tonti, J. Suehle, T. Grasser: "Introduction to the Special Issue on the 2007 International Integrated Reliability Workshop"; IEEE Transactions on Device and Materials Reliability, 8, (2008), 490. BibTeX |
| 55. | K. Martens, B. Kaczer, T. Grasser, B. Jaeger, M. Meuris, H.E. Maes, G. Groeseneken: "Applicability of Charge Pumping on Germanium MOSFETs"; IEEE Electron Device Letters, 29, (2008), 1364 - 1366 doi:10.1109/LED.2008.2007582. BibTeX |
| 54. | M. Vasicek, J. Cervenka, M. Wagner, M. Karner, T. Grasser: "A 2D Non-Parabolic Six-Moments Model"; Solid-State Electronics, 52, (2008), 1606 - 1609 doi:10.1016/j.sse.2008.06.010. BibTeX |
| 53. | M. Vasicek, J. Cervenka, M. Wagner, M. Karner, T. Grasser: "Parameter Modeling for Higher-Order Transport Models in UTB SOI MOSFETs"; Journal of Computational Electronics, 7, (2008), 168 - 173 doi:10.1007/s10825-008-0239-x. BibTeX |
| 52. | S. Dhar, E. Ungersböck, H. Kosina, T. Grasser, S. Selberherr: "Electron Mobility Model for <110> Stressed Silicon Including Strain-Dependent Mass"; IEEE Transactions on Nanotechnology, 6, (2007), 97 - 100 doi:10.1109/TNANO.2006.888533. BibTeX |
| 51. | R. Entner, T. Grasser, O. Triebl, H. Enichlmair, R. Minixhofer: "Negative Bias Temperature Instability Modeling for High-Voltage Oxides at Different Stress Temperatures"; Microelectronics Reliability, 47, (2007), 697 - 699. BibTeX |
| 50. | T. Grasser, S. Selberherr: "Modeling of Negative Bias Temperature Instability"; Journal of Telecommunications and Information Technology, 7, (invited) (2007), 92 - 102. BibTeX |
| 49. | S. Holzer, A. Sheikholeslami, M. Karner, T. Grasser, S. Selberherr: "Comparison of Deposition Models for a TEOS LPCVD Process"; Microelectronics Reliability, 47, (2007), 623 - 625 doi:10.1016/j.microrel.2007.01.058. BibTeX |
| 48. | M. Karner, A. Gehring, S. Holzer, M. Pourfath, M. Wagner, W. Gös, M. Vasicek, O. Baumgartner, Ch. Kernstock, K. Schnass, G. Zeiler, T. Grasser, H. Kosina, S. Selberherr: "A Multi-Purpose Schrödinger-Poisson Solver for TCAD Applications"; Journal of Computational Electronics, 6, (2007), 179 - 182 doi:10.1007/s10825-006-0077-7. BibTeX |
| 47. | M. Karner, A. Gehring, M. Wagner, R. Entner, S. Holzer, W. Gös, M. Vasicek, T. Grasser, H. Kosina, S. Selberherr: "VSP - A Gate Stack Analyzer"; Microelectronics Reliability, 47, (2007), 704 - 708 doi:10.1016/j.microrel.2007.01.059. BibTeX |
| 46. | G. Span, M. Wagner, T. Grasser, L. Holmgren: "Miniaturized TEG with Thermal Generation of Free Carriers"; Physica Status Solidi - Rapid Research Letters, 1, (2007), 241 - 243 doi:10.1002/pssr.200701171. BibTeX |
| 45. | M. Spevak, T. Grasser: "Discretization of Macroscopic Transport Equations on Non-Cartesian Coordinate Systems"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 26, (2007), 1408 - 1416. BibTeX |
| 44. | O. Triebl, T. Grasser: "Vector Discretization Schemes in Technology CAD Environments"; Romanian Journal of Information Science and Technology, 10, (2007), 167 - 176. BibTeX |
| 43. | M. Wagner, M. Karner, J. Cervenka, M. Vasicek, H. Kosina, S. Holzer, T. Grasser: "Quantum Correction for DG MOSFETs"; Journal of Computational Electronics, 5, (2007), 397 - 400 doi:10.1007/s10825-006-0032-7. BibTeX |
| 42. | M. Wagner, G. Span, S. Holzer, T. Grasser: "Thermoelectric Power Generation Using Large-Area Si/SiGe pn-Junctions with Varying Ge Content"; Semiconductor Science and Technology, 22, (2007), 173 - 176. BibTeX |
| 41. | J. Cervenka, W. Wessner, E. Al-Ani, T. Grasser, S. Selberherr: "Generation of Unstructured Meshes for Process and Device Simulation by Means of Partial Differential Equations"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 25, (2006), 2118 - 2128 doi:10.1109/TCAD.2006.876514. BibTeX |
| 40. | S. Dhar, H. Kosina, G. Karlowatz, E. Ungersböck, T. Grasser, S. Selberherr: "High-Field Electron Mobility Model for Strained-Silicon Devices"; IEEE Transactions on Electron Devices, 53, (2006), 3054 - 3062 doi:10.1109/TED.2006.885639. BibTeX |
| 39. | V. Sverdlov, T. Grasser, H. Kosina, S. Selberherr: "Scattering and Space-Charge Effects in Wigner Monte Carlo Simulations of Single and Double Barrier Devices"; Journal of Computational Electronics, 5, (2006), 447 - 450 doi:10.1007/s10825-006-0041-6. BibTeX |
| 38. | T. Ayalew, T. Grasser, H. Kosina, S. Selberherr: "Modeling of Lattice Site-Dependent Incomplete Ionization in α-SiC Devices"; Materials Science Forum, 483-485, (2005), 845 - 848 doi:10.4028/www.scientific.net/MSF.483-485.845. BibTeX |
| 37. | T. Ayalew, S.-C. Kim, T. Grasser, S. Selberherr: "Numerical Analysis of SiC Merged PiN Schottky Diodes"; Materials Science Forum, 483-485, (2005), 949 - 952 doi:10.4028/www.scientific.net/MSF.483-485.949. BibTeX |
| 36. | T. Grasser: "Non-Parabolic Macroscopic Transport Models for Semiconductor Device Simulation"; Physica A: Statistical Mechanics and its Applications, 349, (2005), 221 - 258. BibTeX |
| 35. | T. Grasser, R. Kosik, C. Jungemann, H. Kosina, S. Selberherr: "Nonparabolic Macroscopic Transport Models for Device Simulation Based on Bulk Monte Carlo Data"; Journal of Applied Physics, 97, (2005), 093710-1 - 093710-12 doi:10.1063/1.1883311. BibTeX |
| 34. | S. Holzer, Ch. Hollauer, H. Ceric, S. Wagner, E. Langer, T. Grasser, S. Selberherr: "Transient Electro-Thermal Investigations of Interconnect Structures Exposed to Mechanical Stress"; Proceedings of SPIE, 5837, (2005), 380 - 387 doi:10.1117/12.608414. BibTeX |
| 33. | C. Jungemann, T. Grasser, B. Neinhüs, B. Meinerzhagen: "Failure of Moments-Based Transport Models in Nanoscale Devices Near Equilibrium"; IEEE Transactions on Electron Devices, 52, (2005), 2404 - 2408. BibTeX |
| 32. | S.-C. Kim, W. Bahng, N.-K. Kim, E.-D. Kim, T. Ayalew, T. Grasser, S. Selberherr: "Numerical Simulation and Optimization for 900V 4H-SiC DiMOSFET fabrication"; Materials Science Forum, 483-485, (2005), 793 - 796 doi:10.4028/www.scientific.net/MSF.483-485.793. BibTeX |
| 31. | S. Wagner, T. Grasser, C. Fischer, S. Selberherr: "An Advanced Equation Assembly Module"; Engineering with Computers, 21, (2005), 151 - 163 doi:10.1007/s00366-005-0319-5. BibTeX |
| 30. | T. Ayalew, A. Gehring, T. Grasser, S. Selberherr: "Enhancement of Breakdown Voltage for Ni-SiC Schottky Diodes Utilizing Field Plate Edge Termination"; Microelectronics Reliability, 44, (2004), 1473 - 1478 doi:10.1016/j.microrel.2004.07.042. BibTeX |
| 29. | T. Grasser, R. Kosik, C. Jungemann, B. Meinerzhagen, H. Kosina, S. Selberherr: "A Non-Parabolic Six Moments Model for the Simulation of Sub-100 nm Semiconductor Devices"; Journal of Computational Electronics, 3, (2004), 183 - 187 doi:10.1007/s10825-004-7041-1. BibTeX |
| 28. | S. Holzer, R. Minixhofer, C. Heitzinger, J. Fellner, T. Grasser, S. Selberherr: "Extraction of Material Parameters Based on Inverse Modeling of Three-Dimensional Interconnect Fusing Structures"; Microelectronics Journal, 35, (2004), 805 - 810 doi:10.1016/j.mejo.2004.06.011. BibTeX |
| 27. | V. Palankovski, G. Röhrer, T. Grasser, S. Smirnov, H. Kosina, S. Selberherr: "Rigorous Modeling Approach to Numerical Simulation of SiGe HBTs"; Applied Surface Science, 224, (2004), 361 - 364 doi:10.1016/j.apsusc.2003.09.034. BibTeX |
| 26. | J.M. Park, S. Wagner, T. Grasser, S. Selberherr: "New SOI Lateral Power Devices with Trench Oxide"; Solid-State Electronics, 48, (2004), 1007 - 1015 doi:10.1016/j.sse.2003.12.015. BibTeX |
| 25. | S. Wagner, V. Palankovski, G. Röhrer, T. Grasser, S. Selberherr: "Direct Extraction Feature for Scattering Parameters of SiGe-HBTs"; Applied Surface Science, 224, (2004), 365 - 369 doi:10.1016/j.apsusc.2003.09.035. BibTeX |
| 24. | T. Ayalew, A. Gehring, J.M. Park, T. Grasser, S. Selberherr: "Improving SiC Lateral DMOSFET Reliability under High Field Stress"; Microelectronics Reliability, 43, (2003), 1889 - 1894 doi:10.1016/S0026-2714(03)00321-4. BibTeX |
| 23. | A. Gehring, T. Grasser, H. Kosina, S. Selberherr: "Energy Transport Gate Current Model Accounting for Non-Maxwellian Energy Distribution"; Electronics Letters, 39, (2003), 691 - 692 doi:10.1049/el:20030440. BibTeX |
| 22. | T. Grasser, H. Kosina, S. Selberherr: "Hot Carrier Effects within Macroscopic Transport Models"; International Journal of High Speed Electronics and Systems, 13, (2003), 873 - 901 doi:10.1142/S012915640300206X. BibTeX |
| 21. | T. Grasser, T.-W. Tang, H. Kosina, S. Selberherr: "A Review of Hydrodynamic and Energy-Transport Models for Semiconductor Device Simulation"; Proceedings of the IEEE, 91, (2003), 251 - 274 doi:10.1109/JPROC.2002.808150. BibTeX |
| 20. | J.M. Park, T. Grasser, H. Kosina, S. Selberherr: "A Numerical Study of Partial-SOI LDMOSFETs"; Solid-State Electronics, 47, (2003), 275 - 281 doi:10.1016/S0038-1101(02)00207-1. BibTeX |
| 19. | A. Gehring, T. Grasser, B.-H. Cheong, S. Selberherr: "Design Optimization of Multi-Barrier Tunneling Devices Using the Transfer-Matrix Method"; Solid-State Electronics, 46, (2002), 1545 - 1551 doi:10.1016/S0038-1101(02)00103-X. BibTeX |
| 18. | A. Gehring, T. Grasser, H. Kosina, S. Selberherr: "Simulation of Hot-Electron Oxide Tunneling Current Based on a Non-Maxwellian Electron Energy Distribution Function"; Journal of Applied Physics, 92, (2002), 6019 - 6027 doi:10.1063/1.1516617. BibTeX |
| 17. | T. Grasser, H. Kosina, C. Heitzinger, S. Selberherr: "Accurate Impact Ionization Model which Accounts for Hot and Cold Carrier Populations"; Applied Physics Letters, 80, (2002), 613 - 615 doi:10.1063/1.1445273. BibTeX |
| 16. | T. Grasser, H. Kosina, C. Heitzinger, S. Selberherr: "Characterization of the Hot Electron Distribution Function Using Six Moments"; Journal of Applied Physics, 91, (2002), 3869 - 3879 doi:10.1063/1.1450257. BibTeX |
| 15. | T. Grasser, H. Kosina, S. Selberherr: "Hydrodynamic and Energy-Transport Models for Semiconductor Device Simulation: Extensions and Critical Issues"; Wisnik, 444, (invited) (2002), 28 - 41. BibTeX |
| 14. | T. Grasser, H. Kosina, S. Selberherr: "Hydrodynamic and Energy-Transport Models for Semiconductor Device Simulation: Review of Basic Models"; Wisnik, 444, (invited) (2002), 18 - 27. BibTeX |
| 13. | T. Grasser, S. Selberherr: "Electro-Thermal Effects in Mixed-Mode Device Simulation"; Romanian Journal of Information Science and Technology, 5, (2002), 339 - 354. BibTeX |
| 12. | T. Grasser, S. Selberherr: "Technology CAD: Device Simulation and Characterization"; Journal of Vacuum Science & Technology B, 20, (2002), 407 - 413 doi:10.1116/1.1445162. BibTeX |
| 11. | M. Gritsch, H. Kosina, T. Grasser, S. Selberherr: "Revision of the Standard Hydrodynamic Transport Model for SOI Simulation"; IEEE Transactions on Electron Devices, 49, (2002), 1814 - 1820 doi:10.1109/TED.2002.803645. BibTeX |
| 10. | H. Kosina, M. Gritsch, T. Grasser, S. Selberherr, T. Linton, S. Yu, M. Giles: "An Improved Energy Transport Model Suitable for Simulation of Partially Depleted SOI MOSFETs"; Journal of Computational Electronics, 1, (2002), 371 - 374 doi:10.1023/A:1020703709031. BibTeX |
| 9. | M. Nedjalkov, T. Grasser, H. Kosina, S. Selberherr: "Transient Model for Terminal Current Noise"; Applied Physics Letters, 80, (2002), 607 - 609 doi:10.1063/1.1447002. BibTeX |
| 8. | F. Gamiz, J. Roldan, H. Kosina, T. Grasser: "Improving Strained-Si on Si1-xGex Deep Submicron MOSFETs Performance by Means of a Stepped Doping Profile"; IEEE Transactions on Electron Devices, 48, (2001), 1878 - 1884. BibTeX |
| 7. | T. Grasser, H. Kosina, M. Gritsch, S. Selberherr: "Using Six Moments of Boltzmann's Transport Equation for Device Simulation"; Journal of Applied Physics, 90, (2001), 2389 - 2396 doi:10.1063/1.1389757. BibTeX |
| 6. | T. Grasser, H. Kosina, S. Selberherr: "Influence of the Distribution Function Shape and the Band Structure on Impact Ionization Modeling"; Journal of Applied Physics, 90, (2001), 6165 - 6171 doi:10.1063/1.1415366. BibTeX |
| 5. | T. Grasser, H. Kosina, S. Selberherr: "Investigation of Spurious Velocity Overshoot Using Monte Carlo Data"; Applied Physics Letters, 79, (2001), 1900 - 1902 doi:10.1063/1.1405000. BibTeX |
| 4. | T. Grasser, S. Selberherr: "Fully Coupled Electrothermal Mixed-Mode Device Simulation of SiGe HBT Circuits"; IEEE Transactions on Electron Devices, 48, (2001), 1421 - 1427 doi:10.1109/16.930661. BibTeX |
| 3. | M. Gritsch, H. Kosina, T. Grasser, S. Selberherr: "Influence of Generation/Recombination Effects in Simulations of Partially Depleted SOI MOSFETs"; Solid-State Electronics, 45, (2001), 621 - 627 doi:10.1016/S0038-1101(01)00080-6. BibTeX |
| 2. | V. Palankovski, N. Belova, T. Grasser, H. Puchner, S. Aronowitz, S. Selberherr: "A Methodology for Deep Sub-0.25µm CMOS Technology Prediction"; IEEE Transactions on Electron Devices, 48, (2001), 2331 - 2336 doi:10.1109/16.954473. BibTeX |
| 1. | T. Grasser, S. Selberherr: "Mixed-Mode Device Simulation"; Microelectronics Journal, 31, (2000), 873 - 881 doi:10.1016/S0026-2692(00)00083-5. BibTeX |
| 25. | D. Waldhör, A.-M. El-Sayed, Y. Wimmer, M. Waltl, T. Grasser: "Atomistic Modeling of Oxide Defects"; in "Noise in Nanoscale Semiconductor Devices", T. Grasser (ed); Springer International Publishing, 2020, ISBN: 978-3-030-37499-0, 609 - 648 doi:10.1007/978-3-030-37500-3_18. BibTeX |
| 24. | T. Knobloch, G. Rzepa, Yu. Illarionov, M. Waltl, D.K Polyushkin, A. Pospischil, M. M. Furchi, T. Müller, T. Grasser: "Impact of Gate Dielectrics on the Threshold Voltage in MoS2 Transistors"; in "Semiconductors, Dielectrics, and Metals for Nanoelectronics 15, Vol.80, No.1", issued by The Electrochemical Society; D. Misra, S. De Gendt, M. Houssa, K. Kita, D. Landheer (ed); ECS Transactions, (invited) 2017, ISBN: 978-1-62332-470-4, 203 - 217 doi:10.1149/08001.0203ecst. BibTeX |
| 23. | T. Grasser, E. Langer, S. Selberherr: "Institut für Mikroelektronik"; in "Die Fakultät für Elektrotechnik und Informationstechnik", K. Unterrainer (ed); Böhlau, 2015, ISBN: 978-3-205-20128-1, 57 - 62 doi:10.7767/9783205202240-006. BibTeX |
| 22. | B. Kaczer, T. Grasser, J. Franco, M. Toledano-Luque, Ph. J. Roussel, M. Cho, E. Simoen, G. Groeseneken: "Recent Trends in Bias Temperature Instability"; in "Circuit Design for Reliability", R. Reis, Y. Cao, G. Wirth (ed); Springer New York, 2015, ISBN: 978-1-4614-4077-2, 5 - 19 doi:10.1007/978-1-4614-4078-9_2. BibTeX |
| 21. | W. Gös, F. Schanovsky, T. Grasser: "Advanced Modeling of Oxide Defects"; in "Bias Temperature Instability for Devices and Circuits", T. Grasser (ed); Springer New York, 2013, ISBN: 978-1-4614-7909-3, 409 - 446 doi:10.1007/978-1-4614-7909-3_16. BibTeX |
| 20. | T. Grasser: "The Capture/Emission Time Map Approach to the Bias Temperature Instability"; in "Bias Temperature Instability for Devices and Circuits", T. Grasser (ed); Springer New York, 2013, ISBN: 978-1-4614-7909-3, 447 - 481 doi:10.1007/978-1-4614-7909-3_17. BibTeX |
| 19. | F. Schanovsky, T. Grasser: "On the Microscopic Limit of the RD Model"; in "Bias Temperature Instability for Devices and Circuits", T. Grasser (ed); Springer New York, 2013, ISBN: 978-1-4614-7909-3, 379 - 408 doi:10.1007/978-1-4614-7909-3_15. BibTeX |
| 18. | K. Rupp, A. Jüngel, T. Grasser: "A GPU-Accelerated Parallel Preconditioner for the Solution of the Boltzmann Transport Equation for Semiconductors"; in "Facing the Multicore - Challenge II, Lecture Notes in Computer Science", 7174, R. Keller, D. Kramer, J.-Ph. Weiss (ed); Springer Berlin Heidelberg, 2012, ISBN: 978-3-642-30396-8, 147 - 157 doi:10.1007/978-3-642-30397-5. BibTeX |
| 17. | K. Rupp, A. Jüngel, T. Grasser: "Deterministic Numerical Solution of the Boltzmann Transport Equation"; in "Progress in Industrial Mathematics at ECMI 2010, Mathematics in Industry", 17, R. Keller, D. Kramer, J.-Ph. Weiss (ed); Springer Berlin Heidelberg, 2012, ISBN: 978-3-642-25099-6, 53 - 59 doi:10.1007/978-3-642-25100-9_7. BibTeX |
| 16. | K. Rupp, P. Lagger, T. Grasser, A. Jüngel: "Inclusion of Carrier-Carrier-Scattering Into Arbitrary-Order Spherical Harmonics Expansions of the Boltzmann Transport Equation"; in "The 15th International Workshop on Computational Electronics", IEEE Xplore, 2012, ISBN: 978-1-4673-0705-5, 1 - 4 doi:10.1109/IWCE.2012.6242856. BibTeX |
| 15. | S. E. Tyaginov, I. Starkov, H. Enichlmair, J.M. Park, C. Jungemann, T. Grasser: "Physics-Based Hot-Carrier Degradation Models"; in "Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11", R. Sah (ed); ECS Transactions, 2011, ISBN: 978-1-56677-865-7, 321 - 352 doi:10.1149/1.3572292. BibTeX |
| 14. | W. Gös, F. Schanovsky, Ph. Hehenberger, P.-J. Wagner, T. Grasser: "Charge Trapping and the Negative Bias Temperature Instability"; in "Physics and Technology of High-k Materials 8", ECS Transactions, (invited) 2010, ISBN: 978-1-56677-822-0, 565 - 589 doi:10.1149/1.3481647. BibTeX |
| 13. | K. Rupp, A. Jüngel, T. Grasser: "Matrix Compression for Spherical Harmonics Expansions of the Boltzmann Transport Equation for Semiconductors"; in "ASC Report 10/2010", issued by Institute for Analysis and Scientific Computing; Vienna University of Technology, Wien, 2010, ISBN: 978-3-902627-03-2, 1 - 32. BibTeX |
| 12. | O. Triebl, T. Grasser: "Numerical Power/HV Device Modeling"; in "Power/HV MOS Devices Compact Modeling", W. Grabinski, T. Gneiting (ed); Springer Netherlands, (invited) 2010, ISBN: 978-90-481-3045-0, 1 - 32 doi:10.1007/978-90-481-3046-7_1. BibTeX |
| 11. | M. Vasicek, D. Esseni, C. Fiegna, T. Grasser: "Modeling and Simulation Approaches for Drain Current Computation"; in "Nanoscale CMOS: Innovative Materials, Modeling and Characterization", issued by F. Balestra; Wiley, London, (invited) 2010, ISBN: 978-1-84821-180-3, 259 - 285. BibTeX |
| 10. | M. Vasicek, V. Sverdlov, J. Cervenka, T. Grasser, H. Kosina, S. Selberherr: "Transport in Nanostructures: A Comparative Analysis Using Monte Carlo Simulation, the Spherical Harmonic Method, and Higher Moments Models"; in "Large-Scale Scientific Computing, Lecture Notes in Computer Science", 5910, I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer Berlin Heidelberg, 2010, ISBN: 978-3-642-12534-8, 443 - 450 doi:10.1007/978-3-642-12535-5_52. BibTeX |
| 9. | T. Grasser, W. Gös, B. Kaczer: "Critical Modeling Issues in Negative Bias Temperature Instability"; in "215th ECS Meeting", R. Ekwal Sah, J. Zhang, J. Deen, J. Yota, A. Toriumi (ed); ECS Transactions, (invited) 2009, 265 - 287 doi:10.1149/1.3122096. BibTeX |
| 8. | T. Grasser, W. Gös, B. Kaczer: "Towards Engineering Modeling of Negative Bias Temperature Instability"; in "Defects in Microelectronic Materials and Devices", issued by D. Fleetwood, R. Schrimpf, S. Pantelides; Taylor and Francis/CRC Press, (invited) 2008, ISBN: 1420043765, 399 - 436. BibTeX |
| 7. | B. Kaczer, T. Grasser, R. Fernandez, G. Groeseneken: "Toward Understanding the Wide Distribution of Time Scales in Negative Bias Temperature Instability"; in "Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 9", R. Sah, J. Zhang, Y. Kamakura, M. Deen, J. Yota (ed); ECS Transactions, Pennington, (invited) 2007, ISBN: 978-1-56677-552-6, 265 - 281 doi:10.1149/1.2728801. BibTeX |
| 6. | V. Sverdlov, H. Kosina, T. Grasser, S. Selberherr: "Self-Consistent Wigner Monte Carlo Simulations of Current in Emerging Nanodevices: Role of Tunneling and Scattering"; in "28th International Conference on the Physics of Semiconductors", American Institute of Physics, 2007, ISBN: 978-0-7354-0397-0, 1395 - 1396 doi:10.1063/1.2730425. BibTeX |
| 5. | H. Ceric, R. Heinzl, Ch. Hollauer, T. Grasser, S. Selberherr: "Microstructure and Stress Aspects of Electromigration Modeling"; in "Stress-Induced Phenomena in Metallization", American Institute of Physics, Melville, 2006, ISBN: 0-7354-03104, 262 - 268. BibTeX |
| 4. | M. Wagner, G. Span, S. Holzer, V. Palankovski, O. Triebl, T. Grasser: "Power Output Improvement of Silicon-Germanium Thermoelectric Generators"; in "SiGe and Ge: Materials, Processing, and Devices, Vol. 3, No. 7", issued by The Electrochemical Society; ECS Transactions, 2006, ISBN: 1-56677-507-8, 1151 - 1162 doi:10.1149/1.2355909. BibTeX |
| 3. | T. Grasser: "Closure Relations for Macroscopic Transport Models in Semiconductor Device Simulation"; in "Recent Research Developments in Applied Physics Vol. 7 - 2004 Part II", issued by S.G. Pandalai; Transworld Research Network, (invited) 2004, ISBN: 81-7895-156-8, 423 - 446. BibTeX |
| 2. | T. Grasser, H. Kosina, S. Selberherr: "Hot Carrier Effects within Macroscopic Transport Models"; in "Advanced Device Modeling and Simulation", T. Grasser (ed); World Scientific Publishing Co., Singapore, 2003, ISBN: 9-812-38607-6, 173 - 201. BibTeX |
| 1. | T. Grasser, S. Selberherr: "Current Transport Models for Engineering Applications"; in "Future Trends in Microelectronics", S. Luryi, J. Xu, A. Zaslavsky (ed); John Wiley & Sons, (invited) 2002, ISBN: 0-471-21247-4, 87 - 98. BibTeX |
| 410. | B. Ruch, M. Jech, G. Pobegen, T. Grasser: "Applicability of Shockley-Read-Hall Theory for Interface States"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA - virtual; 2020-12-12 - 2020-12-18; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2020), 449 - 452. BibTeX |
| 409. | A. Vasilev, M. Jech, A. Grill, G. Rzepa, C. Schleich, A. Makarov, G. Pobegen, T. Grasser, M. Waltl, S. E. Tyaginov: "Modeling the Hysteresis of Current-Voltage Characteristics in 4H-SiC Transistors"; Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA - virtual; 2020-10-04 - 2020-10-08; in "Proceedings of the International Integrated Reliability Workshop (IIRW)", (2020), 1 - 4 doi:10.1109/IIRW49815.2020.9312864. BibTeX |
| 408. | D. Milardovich, M. Jech, D. Waldhör, M. Waltl, T. Grasser: "Machine Learning Prediction of Formation Energies in a-SiO2"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan - virtual; 2020-09-23 - 2020-10-06; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2020), 339 - 342 doi:10.23919/SISPAD49475.2020.9241609. BibTeX |
| 407. | Yu. Illarionov, T. Knobloch, M. Waltl, S. Majumdar, M. Soikkeli, W. Kim, S. Wachter, D.K Polyushkin, S. Arpiainen, M. Prunnila, A. Mueller, T. Grasser: "Low Variability and 1010 On/Off Current Ratio in Flexible MoS2 FETs with Al2O3 Encapsulation Improved by Parylene N"; Talk: Electronic Materials Conference (EMC), Columbus, OH, USA - virtual; 2020-06-24 - 2020-06-26; in "Proceedings of the Electronic Materials Conference (EMC)", (2020), 25. BibTeX |
| 406. | T. Knobloch, Yu. Illarionov, B. Uzlu, M. Waltl, D. Neumaier, M. Lemme, T. Grasser: "The Impact of the Graphene Work Function on the Stability of Flexible GFETs"; Talk: Electronic Materials Conference (EMC), Columbus, OH, USA - virtual; 2020-06-24 - 2020-06-26; in "Proceedings of the Electronic Materials Conference (EMC)", (2020), . BibTeX |
| 405. | Yu. Illarionov, A. Banshchikov, T. Knobloch, D.K Polyushkin, S. Wachter, V. V. Fedorov, S. M. Suturin, M. Stöger-Pollach, M. I. Vexler, N. S. Sokolov, T. Grasser: "Crystalline Calcium Fluoride: A Record-Thin Insulator for Nanoscale 2D Electronics"; Talk: Device Research Conference (DRC), Columbus, OH, USA - virtual; 2020-06-21 - 2020-06-24; in "Proceedings of the Device Research Conference (DRC)", (2020), 1 - 2 doi:10.1109/DRC50226.2020.9135160. BibTeX |
| 404. | Yu. Illarionov, T. Knobloch, K. Smithe, M. Waltl, R. Grady, D. Waldhör, E. Pop, T. Grasser: "Anomalous Instabilities in CVD-MoS2 FETs Suppressed by High-Quality Al2O3 Encapsulation"; Poster: Device Research Conference (DRC), Columbus, OH, USA - virtual; 2020-06-21 - 2020-06-24; in "Proceedings of the Device Research Conference (DRC)", (2020), 150 - 151. BibTeX |
| 403. | T. Knobloch, J. Michl, D. Waldhör, Yu. Illarionov, B. Stampfer, A. Grill, R. Zhou, P. Wu, M. Waltl, J. Appenzeller, T. Grasser: "Analysis of Single Electron Traps in Nano-scaled MoS2 FETs at Cryogenic Temperatures"; Talk: Device Research Conference (DRC), Columbus, OH, USA - virtual; 2020-06-21 - 2020-06-24; in "Proceedings of the Device Research Conference (DRC)", (2020), 52 - 53. BibTeX |
| 402. | Yu. Illarionov, T. Knobloch, T. Grasser: "Where Are the Best Insulators for 2D Field-Effect Transistors?"; Talk: Meeting of the Electrochemical Society (ECS), Montreal, Canada - virtual; (invited) 2020-05-10 - 2020-05-14; in "Abstracts of the Meeting of the Electrochemical Society (ECS)", (2020), MA2020-01/844, doi:10.1149/MA2020-0110844mtgabs. BibTeX |
| 401. | J. Berens, M. Weger, G. Pobegen, T. Aichinger, G. Rescher, C. Schleich, T. Grasser: "Similarities and Differences of BTI in SiC and Si Power MOSFETs"; Talk: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 2020-04-28 - 2020-05-30; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), ISBN: 978-1-7281-3200-6, 1 - 6 doi:10.1109/IRPS45951.2020.9129259. BibTeX |
| 400. | T. Grasser, B. Kaczer, B. O´Sullivan, G. Rzepa, B. Stampfer, M. Waltl: "The Mysterious Bipolar Bias Temperature Stress from the Perspective of Gate-Sided Hydrogen Release"; Talk: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 2020-04-28 - 2020-05-30; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), ISBN: 978-1-7281-3200-6, 1 - 6 doi:10.1109/IRPS45951.2020.9129198. BibTeX |
| 399. | A. Grill, E. Bury, J. Michl, S. Tyaginov, D. Linten, T. Grasser, B. Parvais, B. Kaczer, M. Waltl, I. Radu: "Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures"; Talk: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 2020-04-28 - 2020-05-30; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), ISBN: 978-1-7281-3199-3, 1 - 6 doi:10.1109/IRPS45951.2020.9128316. BibTeX |
| 398. | A. Kruv, B. Kaczer, A. Grill, M. Gonzalez, J. Franco, D. Linten, W. Goes, T. Grasser, I. De Wolf: "On the Impact of Mechanical Stress on Gate Oxide Trapping"; Talk: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 2020-04-28 - 2020-05-30; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), 1 - 5 doi:10.1109/IRPS45951.2020.9129541. BibTeX |
| 397. | J. Michl, A. Grill, D. Claes, G. Rzepa, B. Kaczer, D. Linten, I. Radu, T. Grasser, M. Waltl: "Quantum Mechanical Charge Trap Modeling to Explain BTI at Cryogenic Temperatures"; Talk: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 2020-04-28 - 2020-05-30; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), ISBN: 978-1-7281-3199-3, 1 - 6 doi:10.1109/IRPS45951.2020.9128349. BibTeX |
| 396. | B. Ruch, G. Pobegen, C. Schleich, T. Grasser: "Generation of Hot-Carrier Induced Border and Interface Traps, Investigated by Spectroscopic Charge Pumping"; Talk: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 2020-04-28 - 2020-05-30; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), ISBN: 978-1-7281-3200-6, 1 - 6 doi:10.1109/IRPS45951.2020.9129513. BibTeX |
| 395. | S. Tyaginov, A. Grill, M. Vandemaele, T. Grasser, G. Hellings, A. Makarov, M. Jech, D. Linten, B. Kaczer: "A Compact Physics Analytical Model for Hot-Carrier Degradation"; Talk: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 2020-04-28 - 2020-05-30; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), ISBN: 978-1-7281-3199-3, 1 - 7 doi:10.1109/IRPS45951.2020.9128327. BibTeX |
| 394. | M. Jech, S. Tyaginov, B. Kaczer, J. Franco, D. Jabs, C. Jungemann, M. Waltl, T. Grasser: "First-Principles Parameter-Free Modeling of n- and p-FET Hot-Carrier Degradation"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco , USA; 2019-12-07 - 2019-12-11; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2019), doi:10.1109/IEDM19573.2019.8993630. BibTeX |
| 393. | C. Schleich, J. Berens, G. Rzepa, G. Pobegen, G. Rescher, S. E. Tyaginov, T. Grasser, M. Waltl: "Physical Modeling of Bias Temperature Instabilities in SiC MOSFETs"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, USA; 2019-12-07 - 2019-12-11; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2019), doi:10.1109/IEDM19573.2019.8993446. BibTeX |
| 392. | B. Stampfer, M. Simicic, P. Weckx, A. Abbasi, B. Kaczer, T. Grasser, M. Waltl: "Statistical Characterization of BTI and RTN using Integrated pMOS Arrays"; Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2019-10-13 - 2019-10-17; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2019), 1 - 5 doi:10.1109/IIRW47491.2019.8989904. BibTeX |
| 391. | D. Waldhör, Y. Wimmer, A.-M. El-Sayed, W. Goes, M. Waltl, T. Grasser: "Minimum Energy Paths for Non-Adiabatic Charge Transitions in Oxide Defects"; Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2019-10-13 - 2019-10-17; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2019), 1 - 5 doi:10.1109/IIRW47491.2019.8989889. BibTeX |
| 390. | A. Makarov, B. Kaczer, Ph. Roussel, A. Chasin, M. Vandemaele, G. Hellings, A.-M. El-Sayed, M. Jech, T. Grasser, D. Linten, S. E. Tyaginov: "Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants"; Talk: European Solid-State Device Research Conference (ESSDERC), Krakow, Poland; 2019-09-23 - 2019-09-26; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2019), ISBN: 978-1-7281-1539-9, 262 - 265 doi:10.1109/ESSDERC.2019.8901721. BibTeX |
| 389. | A. Makarov, B. Kaczer, Ph. Roussel, A. Chasin, M. Vandemaele, G. Hellings, A.-M. El-Sayed, M. Jech, T. Grasser, D. Linten, S. E. Tyaginov: "Simulation Study: the Effect of Random Dopants and Random Traps on Hot-Carrier Degradation in nFinFETs"; Talk: International Conference on Solid State Devices and Materials (SSDM), Nagoya, Japan; 2019-09-02 - 2019-09-05; in "Extended Abstracts of the International Conference on Solid State Devices and Materials (SSDM)", (2019), 609 - 610. BibTeX |
| 388. | Yu. Illarionov, T. Grasser: "Reliability of 2D Field-Effect Transistors: from First Prototypes to Scalable Devices"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Hangzhou, China; (invited) 2019-07-02 - 2019-07-05; in "Proceedings of the International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)", (2019), 1 - 6 doi:10.1109/IPFA47161.2019.8984799. BibTeX |
| 387. | Yu. Illarionov, A. Banshchikov, M. Vexler, D.K Polyushkin, S. Wachter, M. Thesberg, N. S. Sokolov, T. Mueller, T. Grasser: "Epitaxial CaF2: a Route towards Scalable 2D Electronics"; Poster: International Conference on Physics of 2D Crystals (ICP2DC4), Hangzhou, China; 2019-06-10 - 2019-06-15; in "Proceedings of the International Conference on Physics of 2D Crystals (ICP2DC4)", (2019), 69. BibTeX |
| 386. | A. Makarov, B. Kaczer, Ph. Roussel, A. Chasin, A. Grill, M. Vandemaele, G. Hellings, A.-M. El-Sayed, T. Grasser, D. Linten, S. E. Tyaginov: "Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs"; Talk: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2019-03-31 - 2019-04-04; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2019), ISBN: 978-1-5386-9504-3, doi:10.1109/IRPS.2019.8720584. BibTeX |
| 385. | B. O´Sullivan, R. Ritzenthaler, G. Rzepa, Z. Wu, E. D. Litta, O. Richard, T. Conard, V. Machkaoutsan, P. Fazan, C. Kim, J. Franco, B. Kaczer, T. Grasser, A. Spessot, D. Linten, N. Horiguchi: "Gate-Stack Engineered NBTI Improvements in Highvoltage Logic-For-Memory High-κ/Metal Gate Devices"; Talk: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2019-03-31 - 2019-04-04; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2019), ISBN: 978-1-5386-9504-3, 1 - 8 doi:10.1109/IRPS.2019.8720598. BibTeX |
| 384. | Z. Wu, J. Franco, D. Claes, G. Rzepa, P. Roussel, N. Collaert, G Groeseneken, D. Linten, T. Grasser, B. Kaczer: "Accelerated Capture and Emission (ACE) Measurement Pattern for Efficient BTI Characterization and Modeling"; Talk: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2019-03-31 - 2019-04-04; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2019), ISBN: 978-1-5386-9504-3, 1 - 7 doi:10.1109/IRPS.2019.8720541. BibTeX |
| 383. | J. Franco, Z. Wu, G. Rzepa, A. Vandooren, H. Arimura, D. Claes, N. Horiguchi, N. Collaert, D. Linten, T. Grasser, B. Kaczer: "Low Thermal Budget Dual-Dipole Gate Stacks Engineered for Sufficient BTI Reliability in Novel Integration Schemes"; Talk: IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Singapore; (invited) 2019-03-12 - 2019-03-15; in "Proceedings of the IEEE Electron Devices Technology and Manufacturing Conference (EDTM)", (2019), ISBN: 978-1-5386-6508-4, 215 - 217 doi:10.1109/EDTM.2019.8731237. BibTeX |
| 382. | J. Franco, Z. Wu, G. Rzepa, A. Vandooren, H. Arimura, L. Ragnarsson, G. Hellings, S. Brus, D. Cott, V. De Heyn, G. Groeseneken, N. Horiguchi, J. Ryckaert, N. Collaert, D. Linten, T. Grasser, B. Kaczer: "BTI Reliability Improvement Strategies in Low Thermal Budget Gate Stacks for 3D Sequential Integration"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, USA; 2018-12-01 - 2018-12-05; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2018), ISBN: 978-1-7281-1987-8, 34.2.1 - 34.2.4 doi:10.1109/IEDM.2018.8614559. BibTeX |
| 381. | J. Franco, Z. Wu, G. Rzepa, L. Ragnarsson, H. Dekkers, A. Vandooren, G. Groeseneken, N. Horiguchi, N. Collaert, D. Linten, T. Grasser, B. Kaczer: "On the Impact of the Gate Metal Work-Function on the Charge Trapping Component of BTI"; Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, USA; 2018-10-07 - 2018-10-11; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2018), ISBN: 978-1-5386-6039-3, 1 - 4 doi:10.1109/IIRW.2018.8727089. BibTeX |
| 380. | S. E. Tyaginov, M. Jech, G. Rzepa, A. Grill, A.-M. El-Sayed, G. Pobegen, A. Makarov, T. Grasser: "Border Trap Based Modeling of SiC Transistor Transfer Characteristics"; Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2018-10-07 - 2018-10-11; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2018), ISBN: 978-1-5386-6039-3, doi:10.1109/IIRW.2018.8727083. BibTeX |
| 379. | K. Puschkarsky, H. Reisinger, C. Schlünder, W. Gustin, T. Grasser: "Fast Acquisition of Activation Energy Maps Using Temperature Ramps for Lifetime Modeling of BTI"; Talk: European Solid-State Device Research Conference (ESSDERC), Dresden, Germany; 2018-09-03 - 2018-09-06; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2018), 218 - 221. BibTeX |
| 378. | Yu. Illarionov, K. Smithe, M. Waltl, R. Grady, R.G. Deshmukh, E. Pop, T. Grasser: "Annealing and Encapsulation of CVD-MoS2 FETs with 1010 On/Off Current Ratio"; Poster: Device Research Conference (DRC), Santa-Barbara, CA, USA; 2018-06-24 - 2018-06-27; in "Proceedings of the Device Research Conference (DRC)", (2018), ISBN: 978-1-5386-3028-0, doi:10.1109/DRC.2018.8442242. BibTeX |
| 377. | T. Grasser, B. Stampfer, M. Waltl, G. Rzepa, K. Rupp, F. Schanovsky, G. Pobegen, K. Puschkarsky, H. Reisinger, B. O´Sullivan, B. Kaczer: "Characterization and Physical Modeling of the Temporal Evolution of Near-Interfacial States Resulting from NBTI/PBTI Stress in nMOS/pMOS Transistors"; Talk: IEEE International Reliability Physics Symposium (IRPS), Burlingame, CA, USA; 2018-03-11 - 2018-03-15; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2018), 2A.2-1 - 2A.2-10. BibTeX |
| 376. | Yu. Illarionov, A.J. Molina- Mendoza, M. Waltl, T. Knobloch, M. M. Furchi, T. Mueller, T. Grasser: "Reliability of next-generation field-effect transistors with transition metal dichalcogenides"; Talk: IEEE International Reliability Physics Symposium (IRPS), Burlingame, CA, USA; 2018-03-11 - 2018-03-15; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2018), ISBN: 978-1-5386-5479-8, 6 page(s) doi:10.1109/IRPS.2018.8353605. BibTeX |
| 375. | K. Puschkarsky, T. Grasser, T. Aichinger, W. Gustin, H. Reisinger: "Understanding and Modeling Transient Threshold Voltage Instabilities in SiC MOSFETs"; Talk: IEEE International Reliability Physics Symposium (IRPS), Burlingame, CA, USA; (invited) 2018-03-11 - 2018-03-15; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2018), 3B.5-1 - 3B.5-10. BibTeX |
| 374. | J. Franco, V. Putcha, A. Vais, S. Sioncke, N. Waldron, D. Zhou, G. Rzepa, P. Roussel, G. Groeseneken, M. Heyns, N. Collaert, D. Linten, T. Grasser, B. Kaczer: "Characterization of Oxide Defects in InGaAs MOS Gate Stacks for High-Mobility n-Channel MOSFETs"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; (invited) 2017-12-02 - 2017-12-06; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2017), 4 page(s) . BibTeX |
| 373. | A. Makarov, S. E. Tyaginov, B. Kaczer, M. Jech, A. Chasin, A. Grill, G. Hellings, M. Vexler, D. Linten, T. Grasser: "Hot-Carrier Degradation in FinFETs: Modeling, Peculiarities, and Impact of Device Topology"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 2017-12-02 - 2017-12-06; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2017), ISBN: 978-1-5386-3559-9, 310 - 313 doi:10.1109/IEDM.2017.8268381. BibTeX |
| 372. | K. Puschkarsky, H. Reisinger, T. Aichinger, W. Gustin, T. Grasser: "Threshold Voltage Hysteresis in SiC MOSFETs and Its Impact on Circuit Operation"; Talk: IEEE International Integrated Reliability Workshop (IIRW), Fallen Leaf Lake, CA, USA; 2017-10-08 - 2017-10-12; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2017), 1 - 5. BibTeX |
| 371. | T. Knobloch, G. Rzepa, Yu. Illarionov, M. Waltl, D.K Polyushkin, A. Pospischil, M. M. Furchi, T. Müller, T. Grasser: "Impact of Gate Dielectrics on the Threshold Voltage in MoS2 Transistors"; Talk: Meeting of the Electrochemical Society (ECS), National Harbor, Maryland, USA; (invited) 2017-10-01 - 2017-10-05; in "Meeting Abstracts", (2017), MA2017-02(14): 837, 2 page(s) . BibTeX |
| 370. | Yu. Illarionov, M. Waltl, K. Smithe, E. Pop, T. Grasser: "Encapsulated MoS2 FETs with Improved Performance and Reliability"; Talk: GRAPCHINA, Nanjing, China; 2017-09-24 - 2017-09-26; in "Proceedings of the GRAPCHINA 2017", (2017), 1 page(s) . BibTeX |
| 369. | T. Knobloch, G. Rzepa, Yu. Illarionov, M. Waltl, F. Schanovsky, M. Jech, B. Stampfer, M. M. Furchi, T. Müller, T. Grasser: "Physical Modeling of the Hysteresis in MoS2 Transistors"; Talk: European Solid-State Device Research Conference (ESSDERC), Leuven, Belgium; 2017-09-11 - 2017-09-14; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2017), 284 - 287 doi:10.1109/ESSDERC.2017.8066647. BibTeX |
| 368. | B. Ullmann, M. Jech, S. E. Tyaginov, M. Waltl, Yu. Illarionov, A. Grill, K. Puschkarsky, H. Reisinger, T. Grasser: "The Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on Single Oxide Defects"; Poster: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2017-04-04 - 2017-04-06; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6642-1, XT-10.1 - XT-10.6 doi:10.1109/IRPS.2017.7936424. BibTeX |
| 367. | T. Grasser, M. Waltl, K. Puschkarsky, B. Stampfer, G. Rzepa, G. Pobegen, H. Reisinger, H. Arimura, B. Kaczer: "Implications of Gate-Sided Hydrogen Release for Post-Stress Degradation Build-Up after BTI Stress"; Talk: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2017-04-02 - 2017-04-06; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6641-4, 6A-2.1 - 6A-2.6. BibTeX |
| 366. | A. Grill, B. Stampfer, M. Waltl, K.-S. Im, J. Lee, C. Ostermaier, H. Ceric, T. Grasser: "Characterization and Modeling of Single Defects in GaN/AlGaN Fin-MIS-HEMTs"; Talk: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2017-04-02 - 2017-04-06; in "Proceedings of IEEE International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6641-4, 3B-5.1 - 3B-5.5 doi:10.1109/IRPS.2017.7936285. BibTeX |
| 365. | Yu. Illarionov, M. Waltl, M. Jech, J. Kim, D. Akinwande, T. Grasser: "Reliability of Black Phosphorus Field-Effect Transistors with Respect to Bias-Temperature and Hot-Carrier Stress"; Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2017-04-02 - 2017-04-06; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6642-1, 6A-6.1 - 6A-6.6 doi:10.1109/IRPS.2017.7936338. BibTeX |
| 364. | B. Kaczer, G. Rzepa, J. Franco, P. Weckx, A. Chasin, V. Putcha, E. Bury, M. Simicic, Ph. J. Roussel, G. Hellings, A. Veloso, P. Matagne, T. Grasser, D. Linten: "Benchmarking Time-Dependent Variability of Junctionless Nanowire FETs"; Talk: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2017-04-02 - 2017-04-06; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6641-4, 2D-6.1 - 2D-6.7. BibTeX |
| 363. | G. Rzepa, J. Franco, A. Subirats, M. Jech, A. Chasin, A. Grill, M. Waltl, T. Knobloch, B. Stampfer, T. Chiarella, N. Horiguchi, L. Ragnarsson, D. Linten, B. Kaczer, T. Grasser: "Efficient Physical Defect Model Applied to PBTI in High-κ Stacks"; Poster: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2017-04-02 - 2017-04-06; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6641-4, XT-11.1 - XT-11.6. BibTeX |
| 362. | Yu. Illarionov, G. Rzepa, M. Waltl, T. Knobloch, J. Kim, D. Akinwande, T. Grasser: "Accurate Mapping of Oxide Traps in Highly-Stable Black Phosphorus FETs"; Talk: IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Toyama, Japan; 2017-02-28 - 2017-03-02; in "Proceedings of the IEEE Electron Devices Technology and Manufacturing Conference (EDTM)", (2017), ISBN: 978-1-5090-4661-4, 114 - 115 doi:10.1109/EDTM.2017.7947532. BibTeX |
| 361. | M. Karner, O. Baumgartner, Z. Stanojevic, F. Schanovsky, G. Strof, Ch. Kernstock, H. W. Karner, G. Rzepa, T. Grasser: "Vertically Stacked Nanowire MOSFETs for Sub-10nm Nodes: Advanced Topography, Device, Variability, and Reliability Simulations"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 2016-12-03 - 2016-12-07; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2016), ISBN: 978-1-5090-3902-9, 30.7.1 - 30.7.4. BibTeX |
| 360. | G. Rescher, G. Pobegen, T. Aichinger, T. Grasser: "On the Subthreshold Drain Current Sweep Hysteresis of 4H-SiC nMOSFETs"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 2016-12-03 - 2016-12-07; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2016), ISBN: 978-1-5090-3902-9, 10.8.1 - 10.8.4. BibTeX |
| 359. | B. Kaczer, S. Amoroso, R. Hussin, A. Asenov, J. Franco, P. Weckx, Ph. J. Roussel, G. Rzepa, T. Grasser, N. Horiguchi: "On the distribution of the FET threshold voltage shifts due to individual charged gate oxide defects"; Talk: IEEE International Integrated Reliability Workshop (IIRW), Stanford Sierra Conference Center, S. Lake Tahoe, California, USA; 2016-10-09 - 2016-10-13; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2016), ISBN: 978-1-5090-4192-3, 3 page(s) . BibTeX |
| 358. | S. E. Tyaginov, A. Makarov, M. Jech, J. Franco, P. Sharma, B. Kaczer, T. Grasser: "On the Effect of Interface Traps on the Carrier Distribution Function During Hot-Carrier Degradation"; Poster: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2016-10-09 - 2016-10-13; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2016), ISBN: 978-1-5090-4193-0, 95 - 98 doi:10.1109/IIRW.2016.7904911. BibTeX |
| 357. | P. Sharma, S. E. Tyaginov, S. E. Rauch, J. Franco, B. Kaczer, A. Makarov, M. Vexler, T. Grasser: "A Drift-Diffusion-Based Analytic Description of the Energy Distribution Function for Hot-Carrier Degradation in Decananometer nMOSFETs"; Talk: European Solid-State Device Research Conference (ESSDERC), Lausanne, Switzerland; 2016-09-12 - 2016-09-15; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2016), ISBN: 978-1-5090-2969-3, 428 - 431 doi:10.1109/ESSDERC.2016.7599677. BibTeX |
| 356. | Yu. Illarionov, G. Rzepa, M. Waltl, H. Pandey, S. Kataria, V. Passi, M. Lemme, T. Grasser: "A Systematic Study of Charge Trapping in Single-Layer Double-Gated GFETs"; Talk: Device Research Conference, Newark, Delaware, USA; 2016-06-19 - 2016-06-22; in "74th Device Research Conference Digest", (2016), ISBN: 978-1-5090-2827-6, 89 - 90. BibTeX |
| 355. | G. Rzepa, M. Waltl, W. Gös, B. Kaczer, J. Franco, T. Chiarella, N. Horiguchi, T. Grasser: "Complete Extraction of Defect Bands Responsible for Instabilities in n and pFinFETs"; Talk: International Symposium on VLSI Technology, Honolulu, HI, USA; 2016-06-14 - 2016-06-16; in "2016 Symposium on VLSI Technology Digest of Technical Papers", (2016), ISBN: 978-1-5090-0638-0, 208 - 209. BibTeX |
| 354. | Yu. Illarionov, M. Waltl, J. Kim, D. Akinwande, T. Grasser: "Temperature-dependent Hysteresis in Black Phosphorus FETs"; Poster: Graphene Week, Warsaw, Poland; 2016-06-13 - 2016-06-17; in "Proceedings of the 2016 Graphene Week", (2016), . BibTeX |
| 353. | K. Rupp, A. Morhammer, T. Grasser, A. Jüngel: "Parallel Deterministic Solution of the Boltzmann Transport Equation for Semiconductors"; Talk: International Workshop on Finite Elements for Microwave Engineering, Florence, Italy; 2016-05-16 - 2016-05-18; in "Proceedings of the 13th Workshop on Finite Elements for Microwave Engineering", (2016), ISBN: 978-88-6655-967-2, 104. BibTeX |
| 352. | K. Giering, G.A. Rott, G. Rzepa, H. Reisinger, A. Puppala, T. Reich, W. Gustin, T. Grasser, R. Jancke: "Analog-circuit NBTI Degradation and Time-dependent NBTI Variability: An Efficient Physics-Based Compact Model"; Talk: International Reliability Physics Symposium (IRPS), Pasadena, CA, USA; 2016-04-17 - 2016-04-21; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2016), 4C-4-1 - 4C-4-6 doi:10.1109/IRPS.2016.7574540. BibTeX |
| 351. | T. Grasser, M. Waltl, G. Rzepa, W. Gös, Y. Wimmer, A.-M. El-Sayed, A. Shluger, H. Reisinger, B. Kaczer: "The "Permanent" Component of NBTI Revisited: Saturation, Degradation-Reversal, and Annealing"; Talk: International Reliability Physics Symposium (IRPS), Pasadena, CA, USA; 2016-04-17 - 2016-04-21; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2016), 5A-2-1 - 5A-2-8 doi:10.1109/IRPS.2016.7574504. BibTeX |
| 350. | Yu. Illarionov, M. Waltl, M. M. Furchi, T. Müller, T. Grasser: "Reliability of Single-Layer MoS2 Field-Effect Transistors with SiO2 and hBN Gate Insulators"; Talk: IEEE International Reliability Physics Symposium (IRPS), Pasadena, CA, USA; 2016-04-17 - 2016-04-21; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2016), 5A-1-1 - 5A-1-6 doi:10.1109/IRPS.2016.7574543. BibTeX |
| 349. | M. Waltl, A. Grill, G. Rzepa, W. Gös, J. Franco, B. Kaczer, J. Mitard, T. Grasser: "Nanoscale Evidence for the Superior Reliability of SiGe High-k pMOSFETs"; Poster: International Reliability Physics Symposium (IRPS), Pasadena, CA, USA; 2016-04-17 - 2016-04-21; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2016), XT-02-1 - XT-02-6 doi:10.1109/IRPS.2016.7574644. BibTeX |
| 348. | T. Grasser, M. Waltl, Y. Wimmer, W. Gös, R. Kosik, G. Rzepa, H. Reisinger, G. Pobegen, A.-M. El-Sayed, A. Shluger, B. Kaczer: "Gate-Sided Hydrogen Release as the Origin of "Permanent" NBTI Degradation: From Single Defects to Lifetimes"; Talk: IEEE International Electron Devices Meeting (IEDM), Washington, DC, USA; 2015-12-07 - 2015-12-09; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2015), 535 - 538. BibTeX |
| 347. | A. Grill, G. Rzepa, P. Lagger, C. Ostermaier, H. Ceric, T. Grasser: "Charge Feedback Mechanisms at Forward Threshold Voltage Stress in GaN/AlGaN HEMTs"; Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2015-10-11 - 2015-10-15; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2015), ISBN: 978-1-4673-7395-1, 41 - 45 doi:10.1109/IIRW.2015.7437064. BibTeX |
| 346. | S. E. Tyaginov, M. Jech, P. Sharma, J. Franco, B. Kaczer, T. Grasser: "On the Temperature Behavior of Hot-Carrier Degradation"; Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2015-10-11 - 2015-10-15; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2015), 143 - 146 doi:10.1109/IIRW.2015.7437088. BibTeX |
| 345. | P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, K. Rupp, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser: "Comparison of Analytic Distribution Function Models for Hot-Carrier Degradation in nLDMOSFETs"; Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Toulouse, France; 2015-10-05 - 2015-10-09; in "Abstracts of the 26th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis", (2015), 60. BibTeX |
| 344. | Yu. Illarionov, M. Vexler, V. V. Fedorov, S. M. Suturin, N. S. Sokolov, T. Grasser: "Characterization of Epitaxial Calcium Fluoride as a Dielectric Material for Ultra-Thin Barrier Layers in Silicon Microelectronics"; Poster: International Conference on Solid State Devices and Materials (SSDM), Sapporo, Japan; 2015-09-27 - 2015-09-30; in "Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials (SSDM 2015)", (2015), ISBN: 978-4-86348-514-3, 330 - 331. BibTeX |
| 343. | Yu. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, M. Lemme, T. Grasser: "Back Gate Bias-Temperature Instability in Single-Layer Double-Gated Graphene Field-Effect Transistors"; Talk: International Conference on Solid State Devices and Materials (SSDM), Sapporo, Japan; 2015-09-27 - 2015-09-30; in "Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials (SSDM 2015)", (2015), ISBN: 978-4-86348-514-3, 650 - 651. BibTeX |
| 342. | L. Gerrer, R. Hussin, S. Amoroso, J. Franco, P. Weckx, N. Simicic, N. Horiguchi, B. Kaczer, T. Grasser, A. Asenov: "Experimental Evidences and Simulations of Trap Generation along a Percolation Path"; Talk: European Solid-State Device Research Conference (ESSDERC), Graz; 2015-09-14 - 2015-09-18; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2015), ISBN: 978-1-4673-7133-9, 226 - 229 doi:10.1109/ESSDERC.2015.7324755. BibTeX |
| 341. | Yu. Illarionov, M. Waltl, S. Smith, S. Vaziri, M. Ostling, M. Lemme, T. Grasser: "Interplay between Hot Carrier and Bias Stress Components in Single-Layer Double-Gated Graphene Field-Effect Transistors"; Talk: European Solid-State Device Research Conference (ESSDERC), Graz, Austria; 2015-09-14 - 2015-09-18; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2015), ISBN: 978-1-4673-7133-9, 172 - 175 doi:10.1109/ESSDERC.2015.7324741. BibTeX |
| 340. | B. Kaczer, J. Franco, P. Weckx, P. Roussel, E. Bury, M. Cho, R. Degraeve, D. Linten, G. Groeseneken, H. Kukner, P. Raghavan, F. Catthoor, G. Rzepa, W. Gös, T. Grasser: "The Defect-Centric Perspective of Device and Circuit Reliability - From Individual Defects to Circuits"; Talk: European Solid-State Device Research Conference (ESSDERC), Graz, Austria; (invited) 2015-09-14 - 2015-09-18; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2015), ISBN: 978-1-4673-7860-4, 218 - 225 doi:10.1109/ESSDERC.2015.7324754. BibTeX |
| 339. | R. Stradiotto, G. Pobegen, C. Ostermaier, T. Grasser: "On The Fly Characterization of Charge Trapping Phenomena at GaN/Dielectric and GaN/AlGaN/Dielectric Interfaces Using Impedance Measurements"; Talk: European Solid-State Device Research Conference (ESSDERC), Graz; 2015-09-14 - 2015-09-18; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2015), ISBN: 978-1-4673-7860-4, 218 - 225 doi:10.1109/ESSDERC.2015.7324754. BibTeX |
| 338. | H. Demel, Z. Stanojevic, M. Karner, G. Rzepa, T. Grasser: "Expanding TCAD Simulations from Grid to Cloud"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 2015-09-09 - 2015-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7860-4, 186 - 189 doi:10.1109/SISPAD.2015.7292290. BibTeX |
| 337. | G. Rzepa, M. Waltl, W. Gös, B. Kaczer, T. Grasser: "Microscopic Oxide Defects Causing BTI, RTN, and SILC on High-K FinFETs"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 2015-09-09 - 2015-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7860-4, 144 - 147 doi:10.1109/SISPAD.2015.7292279. BibTeX |
| 336. | P. Sharma, M. Jech, S. E. Tyaginov, F. Rudolf, K. Rupp, H. Enichlmair, J.M. Park, T. Grasser: "Modeling of Hot-Carrier Degradation in LDMOS Devices Using a Drift-Diffusion Based Approach"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 2015-09-09 - 2015-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7858-1, 60 - 63 doi:10.1109/SISPAD.2015.7292258. BibTeX |
| 335. | Y. Wimmer, W. Gös, A.-M. El-Sayed, A. Shluger, T. Grasser: "A Density-Functional Study of Defect Volatility in Amorphous Silicon Dioxide"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 2015-09-09 - 2015-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7860-4, 44 - 47 doi:10.1109/SISPAD.2015.7292254. BibTeX |
| 334. | Y. Wimmer, W. Gös, A.-M. El-Sayed, A. Shluger, T. Grasser: "On the Validity of the Harmonic Potential Energy Surface Approximation for Nonradiative Multiphonon Charge Transitions in Oxide Defects"; Talk: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 2015-09-02 - 2015-09-04; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2015), ISBN: 978-0-692-50554-0, 97 - 98. BibTeX |
| 333. | B. Ullmann, M. Waltl, T. Grasser: "Characterization of the Permanent Component of MOSFET Degradation Mechanisms"; Talk: Vienna Young Scientists Symposium - VSS 2015, Vienna University of Technology; 2015-06-25 - 2015-06-26; in "Proceedings of the 2015 Vienna Young Scient Symposium", (2015), ISBN: 978-3-9504017-0-7, 36 - 37. BibTeX |
| 332. | G. Rzepa, W. Gös, B. Kaczer, T. Grasser: "Characterization and Modeling of Reliability Issues in Nanoscale Devices"; Talk: IEEE International Symposium on Circuits and Systems (ISCAS), Lisbon, Portugal; (invited) 2015-05-24 - 2015-05-27; in "Proceedings of the IEEE International Symposium on Circuits and Systems (ISCAS) 2015", (2015), ISBN: 978-1-4799-8391-9, 2445 - 2448. BibTeX |
| 331. | P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, K. Rupp, M. Bina, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser: "Predictive and Efficient Modeling of Hot-Carrier Degradation in nLDMOS Devices"; Talk: IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), Hong Kong, China; 2015-05-10 - 2015-05-14; in "Proceedings of the IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)", (2015), ISBN: 978-1-4799-6259-4, 389 - 392 doi:10.1109/ISPSD.2015.7123471. BibTeX |
| 330. | J. Franco, B. Kaczer, P. Roussel, E. Bury, H. Mertens, R. Ritzenthaler, T. Grasser, N. Horiguchi, A. Thean, G Groeseneken: "NBTI in Si 0.55 Ge 0.45 Cladding p-FinFETs: Porting the Superior Reliability from Planar to 3D Architectures"; Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2015-04-19 - 2015-04-23; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2015), 2F.4.1 - 2F.4.5 doi:10.1109/IRPS.2015.7112694. BibTeX |
| 329. | T. Grasser, M. Waltl, W. Gös, Y. Wimmer, A. El-Sayed, A. Shluger, B. Kaczer: "On the Volatility of Oxide Defects: Activation, Deactivation, and Transformation"; Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2015-04-19 - 2015-04-23; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2015), 5A.3.1 - 5A.3.8 doi:10.1109/IRPS.2015.7112739. BibTeX |
| 328. | Yu. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, T. Müller, M. Lemme, T. Grasser: "Hot-Carrier Degradation in Single-Layer Double-Gated Graphene Field-Effect Transistors"; Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2015-04-19 - 2015-04-23; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2015), XT.2.1 - XT.2.6 doi:10.1109/IRPS.2015.7112834. BibTeX |
| 327. | B. Kaczer, J. Franco, M. Cho, T. Grasser, P. Roussel, S. E. Tyaginov, M. Bina, Y. Wimmer, L. M. Procel, L. Trojman, F. Crupi, G. Pitner, V. Putcha, P. Weckx, E. Bury, Z. Ji, A. De Keersgieter, T. Chiarella, N. Horiguchi, G Groeseneken, A. Thean: "Origins and Implications of Increased Channel Hot Carrier Variability in nFinFETs"; Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2015-04-19 - 2015-04-23; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2015), 6 page(s) doi:10.1109/IRPS.2015.7112706. BibTeX |
| 326. | M. Rovitto, W. H. Zisser, H. Ceric, T. Grasser: "Electromigration Modelling of Void Nucleation in Open Cu-TSVs"; Poster: International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), Budapest, Hungary; 2015-04-19 - 2015-04-22; in "Proceedings of the International Conference on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)", (2015), ISBN: 978-1-4799-9949-1, 5 page(s) doi:10.1109/EuroSimE.2015.7103100. BibTeX |
| 325. | Yu. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, M. Lemme, T. Grasser: "Temperature Dependence of Hot Carrier and Positive Bias Stress Degradation in Double-Gated Graphene Field-Effect Transistors"; Talk: Graphene 2015, Bilbao, Spain; 2015-03-10 - 2015-03-13; in "Abstracts Graphene 2015", (2015), 1 page(s) . BibTeX |
| 324. | Yu. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, M. Lemme, T. Grasser: "Impact of Hot Carrier Stress on the Defect Density and Mobility in Double-Gated Graphene Field-Effect Transistors"; Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Bologna, Italy; 2015-01-26 - 2015-01-28; in "Proceedings of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2015), ISBN: 978-1-4799-6910-4, 81 - 84 doi:10.1109/ULIS.2015.7063778. BibTeX |
| 323. | P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser: "A Model for Hot-Carrier Degradation in nLDMOS Transistors Based on the Exact Solution of the Boltzmann Transport Equation Versus the Drift-Diffusion Scheme"; Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Bologna, Italy; 2015-01-26 - 2015-01-28; in "Proceedings of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2015), 21 - 24 doi:10.1109/ULIS.2015.7063763. BibTeX |
| 322. | J. Franco, B. Kaczer, N. Waldron, Ph. J. Roussel, A. Alian, M. Pourghaderi, Z. Ji, T. Grasser, T. Kauerauf, S. Sioncke, N. Collaert, A. Thean, G. Groeseneken: "RTN and PBTI-induced Time-Dependent Variability of Replacement Metal-Gate High-k InGaAs FinFETs"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 2014-12-15 - 2014-12-17; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2014), ISBN: 978-1-4799-8001-7, 506 - 509 doi:10.1109/IEDM.2014.7047087. BibTeX |
| 321. | T. Grasser, W. Gös, Y. Wimmer, F. Schanovsky, G. Rzepa, M. Waltl, K. Rott, H. Reisinger, V. Afanas´Ev, A. Stesmans, A. El-Sayed, A. Shluger: "On the Microscopic Structure of Hole Traps in pMOSFETs"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 2014-12-15 - 2014-12-17; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2014), ISBN: 978-1-4799-8001-7, 530 - 533 doi:10.1109/IEDM.2014.7047093. BibTeX |
| 320. | K. Giering, C. Sohrmann, G. Rzepa, L. Heiß, T. Grasser, R. Jancke: "NBTI Modeling in Analog Circuits and its Application to Long-Term Aging Simulations"; Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2014-10-12 - 2014-10-16; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2014), ISBN: 978-1-4799-7308-8, 29 - 34 doi:10.1109/IIRW.2014.7049501. BibTeX |
| 319. | S. E. Tyaginov, M. Bina, J. Franco, Y. Wimmer, F. Rudolf, H. Enichlmair, J.M. Park, B. Kaczer, H. Ceric, T. Grasser: "Dominant Mechanism of Hot-Carrier Degradation in Short- and Long-Channel Transistors"; Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2014-10-12 - 2014-10-16; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2014), ISBN: 978-1-4799-7308-8, 63 - 68 doi:10.1109/IIRW.2014.7049512. BibTeX |
| 318. | Y. Wimmer, S. E. Tyaginov, F. Rudolf, K. Rupp, M. Bina, H. Enichlmair, J.M. Park, R. Minixhofer, H. Ceric, T. Grasser: "Physical Modeling of Hot-Carrier Degradation in nLDMOS Transistors"; Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2014-10-12 - 2014-10-16; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2014), ISBN: 978-1-4799-7308-8, 58 - 62 doi:10.1109/IIRW.2014.7049511. BibTeX |
| 317. | G.A. Rott, K. Rott, H. Reisinger, W. Gustin, T. Grasser: "Mixture of Negative Bias Temperature Instability and Hot-Carrier Driven Threshold Voltage Degradation of 130 nm Technology p-Channel Transistors"; Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Berlin, Germany; 2014-09-29 - 2014-10-02; in "Abstracts 25th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)", (2014), 40. BibTeX |
| 316. | O. Baumgartner, Z. Stanojevic, L. Filipovic, A. Grill, T. Grasser, H. Kosina, M. Karner: "Investigation of Quantum Transport in Nanoscaled GaN High Electron Mobility Transistors"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 2014-09-09 - 2014-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 117 - 120 doi:10.1109/SISPAD.2014.6931577. BibTeX |
| 315. | W. Gös, M. Waltl, Y. Wimmer, G. Rzepa, T. Grasser: "Advanced Modeling of Charge Trapping: RTN, 1/f noise, SILC, and BTI"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; (invited) 2014-09-09 - 2014-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 77 - 80 doi:10.1109/SISPAD.2014.6931567. BibTeX |
| 314. | K. Rupp, M. Bina, Y. Wimmer, A. Jungel, T. Grasser: "Cell-Centered Finite Volume Schemes for Semiconductor Device Simulation"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 2014-09-09 - 2014-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 365 - 368 doi:10.1109/SISPAD.2014.6931639. BibTeX |
| 313. | G. Rzepa, W. Gös, G.A. Rott, K. Rott, M. Karner, C. Kernstock, B. Kaczer, H. Reisinger, T. Grasser: "Physical Modeling of NBTI: From Individual Defects to Devices"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 2014-09-09 - 2014-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 81 - 84 doi:10.1109/SISPAD.2014.6931568. BibTeX |
| 312. | S. E. Tyaginov, M. Bina, J. Franco, Y. Wimmer, D. Osintsev, B. Kaczer, T. Grasser: "A Predictive Physical Model for Hot-Carrier Degradation in Ultra-Scaled MOSFETs"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 2014-09-09 - 2014-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 89 - 92 doi:10.1109/SISPAD.2014.6931570. BibTeX |
| 311. | S. E. Tyaginov, M. Bina, J. Franco, B. Kaczer, T. Grasser: "On the Importance of Electron-electron Scattering for Hot-carrier Degradation"; Talk: International Conference on Solid State Devices and Materials (SSDM), Tsukuba, Japan; 2014-09-08 - 2014-09-11; in "Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials (SSDM)", (2014), 858 - 859. BibTeX |
| 310. | E. Bury, R. Degraeve, M. Cho, B. Kaczer, W. Gös, T. Grasser, N. Horiguchi, G. Groeseneken: "Study of (correlated) trap sites in SILC, BTI and RTN in SiON and HKMG Devices"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, Singapore; 2014-06-30 - 2014-07-04; in "Proceedings of the 21st International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2014), ISBN: 978-1-4799-3929-9, 254 - 257. BibTeX |
| 309. | T. Grasser, K. Rott, H. Reisinger, M. Waltl, W. Gös: "Evidence for Defect Pairs in SiON pMOSFETs"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, Singapore; 2014-06-30 - 2014-07-04; in "Proceedings of the 21st International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2014), ISBN: 978-1-4799-3929-9, 228 - 263. BibTeX |
| 308. | K. Rupp, F. Rudolf, J. Weinbub, A. Jungel, T. Grasser: "Automatic Finite Volume Discretizations Through Symbolic Computations"; Talk: European Seminar on Computing (ESCO), Pilsen, Czech Republic; 2014-06-15 - 2014-06-20; in "Proc. 4th European Seminar on Computing", (2014), 192. BibTeX |
| 307. | Yu. Illarionov, A. Smith, S. Vaziri, M. Ostling, T. Müller, M. Lemme, T. Grasser: "Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors: A Reliability Challenge"; Talk: Silicon Nanoelectronics Workshop, Honolulu, Hawaii, USA; 2014-06-08 - 2014-06-09; in "2014 IEEE Silicon Nanoelectronics Workshop", (2014), ISBN: 978-1-4799-5677-7, 29 - 30. BibTeX |
| 306. | M. Vexler, Yu. Illarionov, S. E. Tyaginov, N. S. Sokolov, V. V. Fedorov, T. Grasser: "Simulation of the Electrical Characteristics of the Devices with Thin Calcium Fluoride Films on Silicon-(111) Using MINIMOS-NT"; Talk: DIELECTRICS-2014, St-Petersburg, Russia; 2014-06-02 - 2014-06-06; in "Materials of XIII International conference DIELECTRICS", (2014), 159 - 162. BibTeX |
| 305. | T. Grasser, K. Rott, H. Reisinger, M. Waltl, J. Franco, B. Kaczer: "A unified perspective of RTN and BTI"; Talk: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 2014-06-01 - 2014-06-05; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2014), ISBN: 978-1-4799-3317-4, 4A.5.1 - 4A.5.7. BibTeX |
| 304. | Yu. Illarionov, M. Bina, S. E. Tyaginov, K. Rott, H. Reisinger, B. Kaczer, T. Grasser: "A Reliable Method for the Extraction of the Lateral Position of Defects in Ultra-scaled MOSFETs"; Poster: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 2014-06-01 - 2014-06-05; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2014), ISBN: 978-1-4799-3317-4, XT13.1 - XT13.6. BibTeX |
| 303. | B. Kaczer, C. Chen, P. Weckx, Ph. J. Roussel, M. Toledano-Luque, M. Cho, J. Watt, K. Chanda, G. Groeseneken, T. Grasser: "Maximizing reliable performance of advanced CMOS circuits-A case study"; Talk: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 2014-06-01 - 2014-06-05; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2014), ISBN: 978-1-4799-3317-4, 2D.4.1 - 2D.4.6. BibTeX |
| 302. | S. E. Tyaginov, M. Bina, J. Franco, D. Osintsev, O. Triebl, B. Kaczer, T. Grasser: "Physical Modeling of Hot-Carrier Degradation for Short- and Long-channel MOSFETs"; Poster: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 2014-06-01 - 2014-06-05; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2014), ISBN: 978-1-4799-3317-4, XT16.1 - XT16.8. BibTeX |
| 301. | M. Waltl, W. Gös, K. Rott, H. Reisinger, T. Grasser: "A Single-Trap Study of PBTI in SiON nMOS Transistors: Similarities and Differences to the NBTI/pMOS Case"; Talk: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 2014-06-01 - 2014-06-05; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2014), ISBN: 978-1-4799-3317-4, XT18.1 - XT18.5. BibTeX |
| 300. | T. Grasser, G. Rzepa, M. Waltl, W. Gös, K. Rott, G.A. Rott, H. Reisinger, J. Franco, B. Kaczer: "Characterization and Modeling of Charge Trapping: From Single Defects to Devices"; Talk: IEEE International Conference on IC Design and Technology (ICICDT), Austin, TX, USA; (invited) 2014-05-28 - 2014-05-30; in "Proceedings of IEEE International Conference on IC Design and Technology", (2014), ISBN: 978-1-4799-2153-9, 1 - 4 doi:10.1109/ICICDT.2014.6838620. BibTeX |
| 299. | K. Rupp, Ph. Tillet, F. Rudolf, J. Weinbub, T. Grasser, A. Jüngel: "Performance Portability Study of Linear Algebra Kernels in OpenCL"; Talk: International Workshop on OpenCL (IWOCL), Bristol, UK; 2014-05-12 - 2014-05-13; in "Proceedings of the International Workshop on OpenCL 2013 & 2014 (IWOCL)", (2014), ISBN: 978-1-4503-3007-7, 11 page(s) doi:10.1145/2664666.2664674. BibTeX |
| 298. | K. Rupp, Ph. Tillet, A. Jungel, T. Grasser: "Achieving Portable High Performance for Iterative Solvers on Accelerators"; Talk: Annual Meeting of the International Association of Applied Mathematics and Mechanics (GAMM), Erlangen, Germany; 2014-03-10 - 2014-03-14; in "Book of Abstracts", (2014), 815. BibTeX |
| 297. | J. Franco, B. Kaczer, Ph. J. Roussel, J. Mitard, S. Sioncke, L. Witters, H. Mertens, T. Grasser, G. Groeseneken: "Understanding the Suppressed Charge Trapping in Relaxed- and Strained Ge/SiO2/HfO2 pMOSFETs and Implications for the Screening of Alternative High-Mobility Substrate/Dielectric CMOS Gate Stacks"; Talk: IEEE International Electron Devices Meeting (IEDM), Washington, DC, USA; 2013-12-09 - 2013-12-11; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2013), 397 - 400 doi:10.1109/IEDM.2013.6724634. BibTeX |
| 296. | T. Grasser, K. Rott, H. Reisinger, M. Waltl, P.-J. Wagner, F. Schanovsky, W. Gös, G. Pobegen, B. Kaczer: "Hydrogen-Related Volatile Defects as the Possible Cause for the Recoverable Component of NBTI"; Talk: IEEE International Electron Devices Meeting (IEDM), Washington, DC, USA; 2013-12-09 - 2013-12-11; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2013), 409 - 412 doi:10.1109/IEDM.2013.6724637. BibTeX |
| 295. | T. Grasser, K. Rott, H. Reisinger, M. Waltl, F. Schanovsky, W. Gös, B. Kaczer: "Recent Advances in Understanding Oxide Traps in pMOS Transistors"; Talk: International Workshop on Dielectric Thin Films For Future Electron Devices: Science and Technology, Tokyo, Japan; (invited) 2013-11-07 - 2013-11-09; in "Proceedings of 2013 IWDTF", (2013), ISBN: 978-4-86348-383-5, 95 - 96. BibTeX |
| 294. | W. Gös, M. Toledano-Luque, F. Schanovsky, M. Bina, O. Baumgartner, B. Kaczer, T. Grasser: "Multi-Phonon Processes as the Origin of Reliability Issues"; Talk: Meeting of the Electrochemical Society (ECS), San Francisco, USA; (invited) 2013-10-27 - 2013-11-01; in "ECS Transactions 2013 - "Semiconductors, Dielectrics, and Materials for Nanoelectronics 11"", (2013), 58/7/, 31 - 47 doi:10.1149/05807.0031ecst. BibTeX |
| 293. | R. Coppeta, H. Ceric, D. Holec, T. Grasser: "Critical thickness for GaN thin film on AlN substrate"; Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 2013-10-13 - 2013-10-17; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2013), ISBN: 978-1-4799-0350-4, 133 - 136. BibTeX |
| 292. | J. Franco, B. Kaczer, P. Roussel, M. Toledano-Luque, P. Weckx, T. Grasser: "Relevance of non-exponential single-defect-induced threshold voltage shifts for NBTI Variability"; Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 2013-10-13 - 2013-10-17; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2013), ISBN: 978-1-4799-0350-4, 69 - 72. BibTeX |
| 291. | B. Kaczer, C. Chen, J. Watt, K. Chanda, P. Weckx, M. Toledano-Luque, G. Groeseneken, T. Grasser: "Reliability and Performance Considerations for NMOSFET Pass Gates in FPGA Applications"; Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 2013-10-13 - 2013-10-17; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2013), ISBN: 978-1-4799-0350-4, 94 - 97. BibTeX |
| 290. | G.A. Rott, H. Nielen, H. Reisinger, W. Gustin, S. E. Tyaginov, T. Grasser: "Drift Compensating Effect during Hot-Carrier Degradation of 130nm Dual Gate Oxide p-channel Transistors"; Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 2013-10-13 - 2013-10-17; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2013), ISBN: 978-1-4799-0350-4, 73 - 77. BibTeX |
| 289. | S. E. Tyaginov, M. Bina, J. Franco, D. Osintsev, Y. Wimmer, B. Kaczer, T. Grasser: "Essential Ingredients for Modeling of Hot-Carrier Degradation in Ultra-Scaled MOSFETs"; Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 2013-10-13 - 2013-10-17; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2013), ISBN: 978-1-4799-0350-4, 98 - 101. BibTeX |
| 288. | W. Gös, M. Toledano-Luque, O. Baumgartner, M. Bina, F. Schanovsky, B. Kaczer, T. Grasser: "Understanding Correlated Drain and Gate Current Fluctuations"; Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Arcachon, France; (invited) 2013-09-30 - 2013-10-04; in "20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2013), 51 - 56. BibTeX |
| 287. | Yu. Illarionov, S. E. Tyaginov, M. Bina, T. Grasser: "A method to determine the lateral trap position in ultra-scaled MOSFETs"; Talk: Solid State Devices and Materials Conference (SSDM), Fukuoka, Japan; 2013-09-24 - 2013-09-27; in "Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials(SSDM)", (2013), ISBN: 978-4-86348-362-0, 728 - 729. BibTeX |
| 286. | K. Rupp, Ph. Tillet, B. Smith, T. Grasser, A. Jungel: "A Note on the GPU Acceleration of Eigenvalue Computations"; Talk: International Conference of Numerical Analysis and Applied Mathematics (ICNAAM), Rhodes, Greece; 2013-09-21 - 2013-09-27; in "AIP Proceedings, volume 1558", (2013), 1536 - 1539. BibTeX |
| 285. | S. E. Tyaginov, D. Osintsev, Yu. Illarionov, J.M. Park, H. Enichlmair, M. I. Vexler, T. Grasser: "Tunnelling of strongly non-equilibrium carriers in the transistors of traditional configuration"; Poster: XI Russian Conference on Semiconductor Physics, St-Petersburg, Russia; 2013-09-16 - 2013-09-20; in "Abstracts of XI Russian Conference on Semiconductor Physics", (2013), ISBN: 978-5-93634-033-3, 441. BibTeX |
| 284. | O. Baumgartner, M. Bina, W. Gös, F. Schanovsky, M. Toledano-Luque, B. Kaczer, H. Kosina, T. Grasser: "Direct Tunneling and Gate Current Fluctuations"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 2013-09-03 - 2013-09-05; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 17 - 20 doi:10.1109/SISPAD.2013.6650563. BibTeX |
| 283. | R. Coppeta, H. Ceric, B. Karunamurthy, T. Grasser: "Epitaxial Volmer-Weber Growth Modelling"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 2013-09-03 - 2013-09-05; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 45 - 48 doi:10.1109/SISPAD.2013.6650570. BibTeX |
| 282. | B. Kaczer, V. Afanas´Ev, K. Rott, F. Cerbu, J. Franco, W. Gös, T. Grasser, O. Madia, D. Nguyen, A. Stesmans, H. Reisinger, M. Toledano-Luque, P. Weckx: "Experimental characterization of BTI defects"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; (invited) 2013-09-03 - 2013-09-05; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 444 - 450 doi:10.1109/SISPAD.2013.6650670. BibTeX |
| 281. | F. Schanovsky, O. Baumgartner, W. Gös, T. Grasser: "A Detailed Evaluation of Model Defects as Candidates for the Bias Temperature Instability"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 2013-09-03 - 2013-09-05; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 1 - 4 doi:10.1109/SISPAD.2013.6650559. BibTeX |
| 280. | F. Schanovsky, W. Gös, T. Grasser: "Advanced Modeling of Charge Trapping at Oxide Defects"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; (invited) 2013-09-03 - 2013-09-05; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 451 - 458 doi:10.1109/SISPAD.2013.6650671. BibTeX |
| 279. | W. Gös, M. Toledano-Luque, O. Baumgartner, M. Bina, F. Schanovsky, B. Kaczer, T. Grasser: "Understanding Correlated Drain and Gate Current Fluctuations"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou, China; 2013-07-15 - 2013-07-19; in "Proceedings of the 20th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2013), ISBN: 978-1-4799-0478-5, 51 - 56. BibTeX |
| 278. | M. Toledano-Luque, B. Kaczer, J. Franco, P. Roussel, M. Bina, T. Grasser, M. Cho, P. Weckx, G Groeseneken: "Degradation of time dependent variability due to interface state generation"; Talk: International Symposium on VLSI Technology, Kyoto, Japan; 2013-06-11 - 2013-06-14; in "2013 Symposium on VLSI Technology (VLSIT)", (2013), ISBN: 978-1-4673-5226-0, 190 - 191. BibTeX |
| 277. | W. Gös, M. Toledano-Luque, O. Baumgartner, F. Schanovsky, B. Kaczer, T. Grasser: "A Comprehensive Model for Correlated Drain and Gate Current Fluctuations"; Talk: International Workshop on Computational Electronics (IWCE), Nara, Japan; 2013-06-04 - 2013-06-07; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7, 46 - 47. BibTeX |
| 276. | J. Franco, B. Kaczer, M. Toledano-Luque, Ph. J. Roussel, G. Groeseneken, B. Schwarz, M. Bina, M. Waltl, P.-J. Wagner, T. Grasser: "Reduction of the BTI Time-Dependent Variability in Nanoscaled MOSFETs by Body Bias"; Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2013-04-14 - 2013-04-18; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2013), 1 - 6. BibTeX |
| 275. | T. Grasser: "Fundamentals of RTN, BTI, and Hot Carrier Degradation: A Matter of Timescales"; Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA (Tutorial); (invited) 2013-04-14 - 2013-04-18; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2013), 1. BibTeX |
| 274. | T. Grasser, K. Rott, H. Reisinger, P.-J. Wagner, W. Gös, F. Schanovsky, M. Waltl, M. Toledano-Luque, B. Kaczer: "Advanced Characterization of Oxide Traps: The Dynamic Time-Dependent Defect Spectroscopy"; Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2013-04-14 - 2013-04-18; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2013), 1 - 6. BibTeX |
| 273. | G. Pobegen, M. Nelhiebel, T. Grasser: "Detrimental impact of hydrogen passivation on NBTI and HC degradation"; Poster: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2013-04-14 - 2013-04-18; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2013), 1 - 6. BibTeX |
| 272. | P. Weckx, B. Kaczer, M. Toledano-Luque, T. Grasser, Ph. J. Roussel, H. Kukner, P. Raghavan, F. Catthoor, G. Groeseneken: "Defect-based Methodology for Workload-dependent Circuit Lifetime Projections - Application to SRAM"; Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2013-04-14 - 2013-04-18; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2013), 1 - 7. BibTeX |
| 271. | M. Bina, K. Rupp, S. E. Tyaginov, O. Triebl, T. Grasser: "Modeling of Hot Carrier Degradation Using a Spherical Harmonics Expansion of the Bipolar Boltzmann Transport Equation"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 2012-12-10 - 2012-12-12; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2012), 713 - 716 doi:10.1109/IEDM.2012.6479138. BibTeX |
| 270. | T. Grasser, H. Reisinger, K. Rott, M. Toledano-Luque, B. Kaczer: "On the Microscopic Origin of the Frequency Dependence of Hole Trapping in pMOSFETs"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 2012-12-10 - 2012-12-12; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2012), 470 - 473 doi:10.1109/IEDM.2012.6479076. BibTeX |
| 269. | T. Grasser, B. Kaczer, H. Reisinger, P.-J. Wagner, M. Toledano-Luque: "Modeling of the bias temperature instability under dynamic stress and recovery conditions"; Talk: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Xi'an, China; (invited) 2012-10-29 - 2012-11-01; in "11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)", (2012), ISBN: 978-1-4673-2474-8, 1 - 4 doi:10.1109/ICSICT.2012.6466737. BibTeX |
| 268. | G. Pobegen, M. Nelhiebel, T. Grasser: "Recent Results Concerning the Influence of Hydrogen on the Bias Temperature Instability"; Talk: IEEE International Integrated Reliability Workshop, California; 2012-10-14 - 2012-10-18; in "2012 IEEE International Integrated Reliability Workshop Final Report", (2012), 54 - 59. BibTeX |
| 267. | K. Rott, D. Schmitt-Landsiedel, H. Reisinger, G.A. Rott, G. Georgakos, C. Schluender, S. Aresu, W. Gustin, T. Grasser: "Impact and measurement of short term threshold instabilities in MOSFETs of analog circuits"; Talk: IEEE International Integrated Reliability Workshop, California; 2012-10-14 - 2012-10-18; in "IEEE International Integrated Reliability Workshop Final Report", (2012), 31 - 34. BibTeX |
| 266. | S. E. Tyaginov, T. Grasser: "Modeling of Hot-Carrier Degradation: Physics and Controversial Issues"; Talk: IEEE International Integrated Reliability Workshop, California; 2012-10-14 - 2012-10-18; in "IEEE International Integrated Reliability Workshop Final Report", (2012), 206 - 215. BibTeX |
| 265. | P.-J. Wagner, B. Kaczer, A. Scholten, H. Reisinger, S. Bychikhin, D. Pogany, L.K.J. Vandamme, T. Grasser: "On the Correlation Between NBTI, SILC, and Flicker Noise"; Talk: IEEE International Integrated Reliability Workshop, California; 2012-10-14 - 2012-10-18; in "IEEE International Integrated Reliability Workshop Final Report", (2012), 60 - 64. BibTeX |
| 264. | M. Waltl, P.-J. Wagner, H. Reisinger, K. Rott, T. Grasser: "Advanced Data Analysis Algorithms for the Time-Dependent Defect Spectroscopy of NBTI"; Talk: IEEE International Integrated Reliability Workshop, California; 2012-10-14 - 2012-10-18; in "IEEE International Integrated Reliability Workshop Final Report", (2012), 74 - 79. BibTeX |
| 263. | J. Franco, B. Kaczer, J. Mitard, M. Toledano-Luque, G. Eneman, Ph. J. Roussel, M. Cho, T. Kauerauf, T. Grasser, L. Witters, G. Hellings, L. Ragnarsson, N. Horiguchi, M. Heyns, G. Groeseneken: "Reliability of SiGe Channel MOS"; Talk: Honolulu PRiME 2012, Honolulu, USA; 2012-10-07 - 2012-10-12; in "ECS Meeting Abstracts", (2012), MA2012-02, 1 page(s) . BibTeX |
| 262. | M. Bina, O. Triebl, B. Schwarz, M. Karner, B. Kaczer, T. Grasser: "Simulation of Reliability on Nanoscale Devices"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 2012-09-05 - 2012-09-07; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2, 109 - 112. BibTeX |
| 261. | K. Rupp, C. Jungemann, M. Bina, A. Jüngel, T. Grasser: "Bipolar Spherical Harmonics Expansions of the Boltzmann Transport Equation"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 2012-09-05 - 2012-09-07; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2, 19 - 22. BibTeX |
| 260. | I. Starkov, H. Enichlmair, S. E. Tyaginov, T. Grasser: "Charge-Pumping Extraction Techniques for Hot-Carrier Induced Interface and Oxide Trap Spatial Distributions in MOSFETs"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2012-07-02 - 2012-07-06; in "Proceedings of the 19th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2012), ISBN: 978-1-4673-0980-6, 1 - 6 doi:10.1109/IPFA.2012.6306266. BibTeX |
| 259. | S. E. Tyaginov, I. Starkov, O. Triebl, M. Karner, C. Kernstock, C. Jungemann, H. Enichlmair, J.M. Park, T. Grasser: "Impact of Gate Oxide Thickness Variations on Hot-Carrier Degradation"; Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2012-07-02 - 2012-07-06; in "Proceedings of the 19th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2012), ISBN: 978-1-4673-0980-6, 1 - 5 doi:10.1109/IPFA.2012.6306265. BibTeX |
| 258. | K. Rupp, T. Grasser, A. Jüngel: "Recent advances in the spherical harmonics expansion of the Boltzmann transport equation"; Talk: Congresso Nationale Simai 2012, Turin, Italy; 2012-06-25 - 2012-06-28; in "Abstracts of Congresso Nationale Simai 2012", (2012), 183. BibTeX |
| 257. | I. Starkov, H. Enichlmair, T. Grasser: "Local Oxide Capacitance as a Crucial Parameter for Characterization of Hot-Carrier Degradation in High-Voltage n-MOSFET"; Talk: Workshop on Dielectrics in Microelectronics (WODIM), Dresden, Germany; 2012-06-25 - 2012-06-27; in "Abstract Booklet", (2012), 40. BibTeX |
| 256. | J. Cervenka, A. Steinmair, J.M. Park, E. Seebacher, T. Grasser: "TCAD Simulations of Statistical Process Variations for High-Voltage LDMOS Transistors"; Talk: European Workshop on CMOS Variability, Nice, France; 2012-06-11 - 2012-06-12; in "Proceedings of the 3rd European Workshop on CMOS Variability", (2012), ISBN: 978-2-914561-56-3, 4 page(s) . BibTeX |
| 255. | J. Franco, B. Kaczer, J. Mitard, M. Toledano-Luque, F. Crupi, G. Eneman, Ph. J. Roussel, T. Grasser, M. Cho, T. Kauerauf, L. Witters, G. Hellings, L. Ragnarsson, N. Horiguchi, M. Heyns, G. Groeseneken: "Superior reliability and reduced Time-Dependent variability in high-mobility SiGe channel pMOSFETs for VLSI logic applications"; Talk: IEEE International Conference on IC Design and Technology (ICICDT), Austin, TX, USA; (invited) 2012-05-30 - 2012-06-01; in "Proceedings of IEEE International Conference on IC Design and Technology", (2012), 1 - 4. BibTeX |
| 254. | K. Rupp, P. Lagger, T. Grasser: "Inclusion of Carrier-Carrier-Scattering Into Arbitrary-Order Spherical Harmonics Expansions of the Boltzmann Transport Equation"; Talk: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 2012-05-22 - 2012-05-25; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2012), 109 - 110. BibTeX |
| 253. | T. Grasser: "Recent Developments in Understanding the Bias Temperature Instability"; Talk: International Conference on Microelectronics (MIEL), Nis, Serbia; (invited) 2012-05-13 - 2012-05-16; in "Proceedings International Conference on Microelectronics (MIEL)", (2012), ISBN: 978-1-4673-0238-8, 315 - 322. BibTeX |
| 252. | T. Aichinger, P. Lenahan, T. Grasser, G. Pobegen, M. Nelhiebel: "Evidence for Pb Center-Hydrogen Complexes after Subjecting PMOS Devices to NBTI Stress - a Combined DCIV/SDR Study"; Poster: International Reliability Physics Symposium (IRPS), Californi, USA; 2012-04-17 - 2012-04-19; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2012), ISBN: 978-1-4577-1680-5, 6 page(s) . BibTeX |
| 251. | J. Franco, B. Kaczer, M. Toledano-Luque, Ph. J. Roussel, J. Mitard, L. Ragnarsson, L. Witters, T. Chiarella, M. Togo, N. Horiguchi, G. Groeseneken, M. F. Bukhori, T. Grasser, A. Asenov: "Impact of Single Charged Gate Oxide Defects on the Performance and Scaling of Nanoscaled FETs"; Talk: International Reliability Physics Symposium (IRPS), Californi, USA; 2012-04-17 - 2012-04-19; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2012), ISBN: 978-1-4577-1680-5, 6 page(s) . BibTeX |
| 250. | T. Grasser, B. Kaczer, H. Reisinger, P.-J. Wagner, M. Toledano-Luque: "On the Frequency Dependence of the Bias Temperature Instability"; Poster: International Reliability Physics Symposium (IRPS), Californi, USA; 2012-04-17 - 2012-04-19; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2012), ISBN: 978-1-4577-1680-5, 6 page(s) . BibTeX |
| 249. | B. Kaczer, J. Franco, M. Toledano-Luque, Ph. J. Roussel, M. F. Bukhori, A. Asenov, B. Schwarz, M. Bina, T. Grasser, G. Groeseneken: "The Relevance of Deeply-Scaled FET Threshold Voltage Shifts for Operation Lifetimes"; Talk: International Reliability Physics Symposium (IRPS), Californi, USA; 2012-04-17 - 2012-04-19; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2012), ISBN: 978-1-4577-1680-5, 6 page(s) . BibTeX |
| 248. | F. Schanovsky, T. Grasser: "On the Microscopic Limit of the Modified Reaction-Diffusion Model for the Negative Bias Temperature Instability"; Poster: International Reliability Physics Symposium (IRPS), Californi, USA; 2012-04-17 - 2012-04-19; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2012), ISBN: 978-1-4577-1680-5, 6 page(s) . BibTeX |
| 247. | I. Starkov, H. Enichlmair, S. E. Tyaginov, T. Grasser: "Analysis of the Threshold Voltage Turn-Around Effect in High-Voltage n-MOSFETs Due to Hot-Carrier Stress"; Poster: International Reliability Physics Symposium (IRPS), Californi, USA; 2012-04-17 - 2012-04-19; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2012), ISBN: 978-1-4577-1680-5, 6 page(s) . BibTeX |
| 246. | M. Toledano-Luque, B. Kaczer, E. Simoen, R. Degraeve, J. Franco, Ph. J. Roussel, T. Grasser, G. Groeseneken: "Correlation of Single Trapping and Detrapping Effects in Drain and Gate Currents of Nanoscaled nFETs and pFETs"; Poster: International Reliability Physics Symposium (IRPS), Californi, USA; 2012-04-17 - 2012-04-19; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2012), ISBN: 978-1-4577-1680-5, 6 page(s) . BibTeX |
| 245. | I. Starkov, A. S. Starkov, S. E. Tyaginov, H. Enichlmair, H. Ceric, T. Grasser: "An Analytical Model for MOSFET Local Oxide Capacitance"; Talk: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 2011-12-07 - 2011-12-09; in "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3, 2 page(s) . BibTeX |
| 244. | J. Franco, B. Kaczer, G. Eneman, Ph. J. Roussel, T. Grasser, J. Mitard, L. Ragnarsson, M. Cho, L. Witters, T. Chiarella, M. Togo, W. Wang, A. Hikavyy, R. Loo, N. Horiguchi, G. Groeseneken: "Superior NBTI Reliability of SiGe Channel pMOSFETs: Replacement Gate, FinFETs, and Impact of Body Bias"; Talk: IEEE International Electron Devices Meeting (IEDM), Washington DC, USA; 2011-12-05 - 2011-12-07; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2011), ISBN: 978-1-4577-0505-2, 4 page(s) doi:10.1109/IEDM.2011.6131580. BibTeX |
| 243. | T. Grasser, P.-J. Wagner, H. Reisinger, T. Aichinger, G. Pobegen, M. Nelhiebel, B. Kaczer: "Analytic Modeling of the Bias Temperature Instability Using Capture/Emission Time Maps"; Talk: IEEE International Electron Devices Meeting (IEDM), Washington DC, USA; 2011-12-05 - 2011-12-07; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2011), ISBN: 978-1-4577-0505-2, 4 page(s) doi:10.1109/IEDM.2011.6131624. BibTeX |
| 242. | G. Pobegen, T. Aichinger, M. Nelhiebel, T. Grasser: "Understanding Temperature Acceleration for NBTI"; Talk: IEEE International Electron Devices Meeting (IEDM), Washington DC, USA; 2011-12-05 - 2011-12-07; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2011), ISBN: 978-1-4577-0505-2, 4 page(s) doi:10.1109/IEDM.2011.6131623. BibTeX |
| 241. | K. Rupp, T. Grasser, A. Jüngel: "On the Feasibility of Spherical Harmonics Expansions of the Boltzmann Transport Equation for Three-Dimensional Device Geometries"; Talk: IEEE International Electron Devices Meeting (IEDM), Washington DC, USA; 2011-12-05 - 2011-12-07; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2011), ISBN: 978-1-4577-0505-2, 4 page(s) doi:10.1109/IEDM.2011.6131667. BibTeX |
| 240. | M. Bina, T. Aichinger, G. Pobegen, W. Gös, T. Grasser: "Modeling of DCIV Recombination Currents Using A Multistate Multiphonon Model"; Talk: IEEE International Integrated Reliability Workshop, South Lake Tahoe, USA; 2011-10-16 - 2011-10-20; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2011), 27 - 31. BibTeX |
| 239. | B. Kaczer, M. Toledano-Luque, J. Franco, T. Grasser, Ph. J. Roussel, V. V. A. Camargo, S. Mahato, E. Simoen, F. Catthoor, G.I. Wirth, G. Groeseneken: "Recent Trends in CMOS Reliability: From Individual Traps to Circuit Simulations"; Talk: IEEE International Integrated Reliability Workshop, South Lake Tahoe, USA; (invited) 2011-10-16 - 2011-10-20; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2011), 32. BibTeX |
| 238. | F. Schanovsky, T. Grasser: "On the Microscopic Limit of the Reaction-Diffusion Model for the Negative Bias Temperature Instability"; Talk: IEEE International Integrated Reliability Workshop, South Lake Tahoe, USA; 2011-10-16 - 2011-10-20; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2011), 17 - 21. BibTeX |
| 237. | R. Southwick III, S. T. Purnell, B. A. Rapp, R. J. Thompson, S. K. Pugmire, B. Kaczer, T. Grasser, B. Knowlton: "Cryogenic to Room Temperature Effects of NBTI in High-k PMOS Devices"; Talk: IEEE International Integrated Reliability Workshop, South Lake Tahoe, USA; 2011-10-16 - 2011-10-20; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2011), 12 - 16. BibTeX |
| 236. | G. Pobegen, T. Aichinger, T. Grasser, M. Nelhiebel: "Impact of Gate Poly Doping and Oxide Thickness on the N- and PBTI in MOSFETs"; Talk: 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, Bordeaux, France; 2011-10-03 - 2011-10-07; in "Proceedings of the 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2011), 1530 - 1534. BibTeX |
| 235. | S. E. Tyaginov, I. Starkov, H. Enichlmair, C. Jungemann, J.M. Park, E. Seebacher, R. Orio, H. Ceric, T. Grasser: "An Analytical Approach for Physical Modeling of Hot-Carrier Induced Degradation"; Talk: 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, Bordeaux, France; 2011-10-03 - 2011-10-07; in "Proceedings of the 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2011), 51, 1525 - 1529. BibTeX |
| 234. | K. Rupp, A. Jüngel, T. Grasser: "A GPU-Accelerated Parallel Preconditioner for the Solution of the Boltzmann Transport Equation for Semiconductors"; Talk: Facing the Multicore Challenge II, Karlsruhe, Germany; 2011-09-28 - 2011-09-30; in "Proceedings of Facing the Multicore Challenge II", (2011), 11 page(s) . BibTeX |
| 233. | W. Gös, F. Schanovsky, H. Reisinger, B. Kaczer, T. Grasser: "Bistable Defects as the Cause for NBTI and RTN"; Talk: Gettering and Defect Engineering in Semiconductor Technology, Loipersdorf, Austria; (invited) 2011-09-25 - 2011-09-30; in "GADEST 2011: Abstract Booklet", (2011), 153. BibTeX |
| 232. | I. Starkov, S. E. Tyaginov, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser: "Accurate Extraction of MOSFET Interface State Spatial Distribution from Charge Pumping Measurements"; Talk: Gettering and Defect Engineering in Semiconductor Technology, Loipersdorf, Austria; 2011-09-25 - 2011-09-30; in "GADEST 2011: Abstract Booklet", (2011), 105 - 106. BibTeX |
| 231. | S. E. Tyaginov, I. Starkov, C. Jungemann, H. Enichlmair, J.M. Park, T. Grasser: "Impact of the Carrier Distribution Function on Hot-Carrier Degradation Modeling"; Talk: European Solid-State Device Research Conference (ESSDERC), Helsinki, Finland; 2011-09-12 - 2011-09-16; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2011), 151 - 154. BibTeX |
| 230. | Ph. Hehenberger, W. Gös, O. Baumgartner, J. Franco, B. Kaczer, T. Grasser: "Quantum-Mechanical Modeling of NBTI in High-k SiGe MOSFETs"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 11 - 14 doi:10.1109/SISPAD.2011.6035036. BibTeX |
| 229. | K. Rupp, T. Grasser, A. Jüngel: "Adaptive Variable-Order Spherical Harmonics Expansion of the Boltzmann Transport Equation"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 151 - 155 doi:10.1109/SISPAD.2011.6034964. BibTeX |
| 228. | K. Rupp, T. Grasser, A. Jüngel: "Parallel Preconditioning for Spherical Harmonics Expansions of the Boltzmann Transport Equation"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 147 - 150 doi:10.1109/SISPAD.2011.6034963. BibTeX |
| 227. | F. Schanovsky, O. Baumgartner, T. Grasser: "Multi Scale Modeling of Multi Phonon Hole Capture in the Context of NBTI"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 15 - 18 doi:10.1109/SISPAD.2011.6035038. BibTeX |
| 226. | I. Starkov, H. Ceric, S. E. Tyaginov, T. Grasser, H. Enichlmair, J.M. Park, C. Jungemann: "Analysis of Worst-Case Hot-Carrier Degradation Conditions in the Case of n- and p-channel High-Voltage MOSFETs"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 127 - 130 doi:10.1109/SISPAD.2011.6035066. BibTeX |
| 225. | S. E. Tyaginov, I. Starkov, O. Triebl, H. Ceric, T. Grasser, H. Enichlmair, J.M. Park, C. Jungemann: "Secondary Generated Holes as a Crucial Component for Modeling of HC Degradation in High-Voltage n-MOSFET"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 123 - 126 doi:10.1109/SISPAD.2011.6035065. BibTeX |
| 224. | I. Starkov, H. Ceric, S. E. Tyaginov, T. Grasser: "Analysis of Worst-Case Hot-Carrier Conditions for n-type MOSFET"; Talk: 7th Conference on PhD Research in Microelectronics and Electronics (PRIME), Madonna di Campiglio, Italy; 2011-07-03 - 2011-07-07; in "Proceedings of the 7th Conference on PhD Research in Microelectronics and Electronics", (2011), ISBN: 978-1-4244-9136-0, 4 page(s) doi:10.1109/PRIME.2011.5966251. BibTeX |
| 223. | M. Toledano-Luque, B. Kaczer, J. Franco, Ph. J. Roussel, T. Grasser, T. Y. Hoffmann, G. Groeseneken: "From Mean Values to Distributions of BTI Lifetime of Deeply Scaled FETs Through Atomistic Understanding of the Degradation"; Talk: Symposium on VLSI Technology, Kyoto, Japan; 2011-06-14 - 2011-06-16; in "2011 Symposium on VLSI Technology Digest of Technical Papers", (2011), ISBN: 978-1-4244-9949-6, 2 page(s) . BibTeX |
| 222. | W. Gös, F. Schanovsky, T. Grasser, H. Reisinger, B. Kaczer: "Advanced Modeling of Oxide Defects for Random Telegraph Noise"; Talk: International Conference on Noise and Fluctuations (ICNF), Toronto, Canada; 2011-06-12 - 2011-06-16; in "Proceedings of the 21st International Conference on Noise and Fluctuations", (2011), 4 page(s) . BibTeX |
| 221. | S. E. Tyaginov, I. Starkov, H. Enichlmair, J.M. Park, C. Jungemann, T. Grasser: "Physics-Based Hot-Carrier Degradation Modeling"; Talk: 219th ECS Meeting, Montreal, Canada; (invited) 2011-05-01 - 2011-05-06; in "Meet. Abstr. - Electrochem. Soc. 2011", (2011)", (2011), 1 page(s) . BibTeX |
| 220. | J. Franco, B. Kaczer, G. Eneman, Ph. J. Roussel, M. Cho, J. Mitard, L. Witters, T. Y. Hoffmann, G. Groeseneken, F. Crupi, T. Grasser: "On the Recoverable and Permanent Components of Hot Carrier and NBTI in Si pMOSFETs and their Implications in Si0.45Ge0.55 pMOSFETs"; Talk: International Reliability Physics Symposium (IRPS), Monterey; 2011-04-12 - 2011-04-14; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2011), 6 page(s) doi:10.1109/IRPS.2011.5784545. BibTeX |
| 219. | T. Grasser, T. Aichinger, G. Pobegen, H. Reisinger, P.-J. Wagner, J. Franco, M. Nelhiebel, B. Kaczer: "The `Permanent´ Component of NBTI: Composition and Annealing"; Talk: International Reliability Physics Symposium (IRPS), Monterey; 2011-04-12 - 2011-04-14; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2011), 9 page(s) . BibTeX |
| 218. | B. Kaczer, S. Mahato, V. Valduga de Almeida Camargo, M. Toledano-Luque, Ph. J. Roussel, T. Grasser, F. Catthoor, P. Dobrovolny, P. Zuber, G.I. Wirth, G. Groeseneken: "Atomistic Approach to Variability of Bias-Temperature Instability in Circuit Simulations"; Poster: International Reliability Physics Symposium (IRPS), Monterey; 2011-04-12 - 2011-04-14; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2011), 5 page(s) . BibTeX |
| 217. | H. Reisinger, T. Grasser, K. Ermisch, H. Nielen, W. Gustin, C. Schlünder: "Understanding and Modeling AC BTI"; Talk: International Reliability Physics Symposium (IRPS), Monterey; 2011-04-12 - 2011-04-14; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2011), 8 page(s) . BibTeX |
| 216. | M. Toledano-Luque, B. Kaczer, Ph. J. Roussel, T. Grasser, G.I. Wirth, J. Franco, C. Vrancken, N. Horiguchi, G. Groeseneken: "Response of a Single Trap to AC Negative Bias Temperature Stress"; Talk: International Reliability Physics Symposium (IRPS), Monterey; 2011-04-12 - 2011-04-14; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2011), 8 page(s) . BibTeX |
| 215. | T. Grasser: "Charge Trapping in Oxides From RTN to BTI"; Talk: International Reliability Physics Symposium (IRPS), Monterey (Tutorial); 2011-04-10 - 2011-04-14; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2011), 128 page(s) . BibTeX |
| 214. | J. Franco, B. Kaczer, G. Eneman, J. Mitard, A. Stesmans, V. Afanas´Ev, T. Kauerauf, Ph. J. Roussel, M. Toledano-Luque, M. Cho, R. Degraeve, T. Grasser, L. Ragnarsson, L. Witters, J. Tseng, S. Takeoka, W. Wang, T. Y. Hoffmann, G. Groeseneken: "6Å EOT Si45Ge55 pMOSFET with Optimized Reliability (VDD=1V): Meeting the NBTI Lifetime Target at Ultra-Thin EOT"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 2010-12-06 - 2010-12-08; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2010), 70 - 73 doi:10.1109/IEDM.2010.5703292. BibTeX |
| 213. | T. Grasser, B. Kaczer, W. Gös, H. Reisinger, T. Aichinger, Ph. Hehenberger, P.-J. Wagner, F. Schanovsky, J. Franco, Ph. J. Roussel, M. Nelhiebel: "Recent Advances in Understanding the Bias Temperature Instability"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; (invited) 2010-12-06 - 2010-12-08; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2010), 82 - 85 doi:10.1109/IEDM.2010.5703295. BibTeX |
| 212. | F. Schanovsky, W. Gös, T. Grasser: "Ab-Initio Calculation of the Vibrational Influence on Hole-Trapping"; Talk: International Workshop on Computational Electronics (IWCE), Pisa, Italy; 2010-10-26 - 2010-10-29; in "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2010), ISBN: 978-1-4244-9381-4, 163 - 166 doi:10.1109/IWCE.2010.5677989. BibTeX |
| 211. | M. F. Bukhori, T. Grasser, B. Kaczer, H. Reisinger, A. Asenov: "'Atomistic' Simulation of RTS Amplitudes Due to Single and Multiple Charged Defect States and Their Interactions"; Talk: IEEE International Integrated Reliability Workshop, California; 2010-10-17 - 2010-10-21; in "Final Report of IEEE International Integrated Reliability Workshop", (2010), 76 - 79 doi:10.1109/IIRW.2010.5706490. BibTeX |
| 210. | T. Grasser, T. Aichinger, H. Reisinger, J. Franco, P.-J. Wagner, M. Nelhiebel, C. Ortolland, B. Kaczer: "On the 'Permanent' Component of NBTI"; Talk: IEEE International Integrated Reliability Workshop, California; 2010-10-17 - 2010-10-21; in "Final Report of IEEE International Integrated Reliability Workshop", (2010), 2 - 7 doi:10.1109/IIRW.2010.5706472. BibTeX |
| 209. | Ph. Hehenberger, H. Reisinger, T. Grasser: "Recovery of Negative and Positive Bias Temperature Stress in pMOSFETs"; Talk: IEEE International Integrated Reliability Workshop, California; 2010-10-17 - 2010-10-21; in "Final Report of IEEE International Integrated Reliability Workshop", (2010), 8 - 11 doi:10.1109/IIRW.2010.5706473. BibTeX |
| 208. | H. Reisinger, T. Grasser, K. Hofmann, W. Gustin, C. Schlünder: "The Impact of Recovery on BTI Reliability Assessments"; Talk: IEEE International Integrated Reliability Workshop, California; 2010-10-17 - 2010-10-21; in "Final Report of IEEE International Integrated Reliability Workshop", (2010), 12 - 16 doi:10.1109/IIRW.2010.5706474. BibTeX |
| 207. | S. E. Tyaginov, I. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser: "Interface Traps Density-of-States as a Vital Component for Hot-Carrier Degradation Modeling"; Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Montecassino Abbey and Gaeta; 2010-10-11 - 2010-10-15; in "Proceedings of the 21st European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2010), 3 page(s) . BibTeX |
| 206. | W. Gös, F. Schanovsky, Ph. Hehenberger, P.-J. Wagner, T. Grasser: "Charge Trapping and the Negative Bias Temperature Instability"; Talk: 218th ECS Meeting, Las Vegas, USA; 2010-10-10 - 2010-10-15; in "Meet. Abstr. - Electrochem. Soc. 2010", (2010), ISBN: 978-1-56677-822-0, 565 page(s) . BibTeX |
| 205. | C. Schlünder, H. Reisinger, W. Gustin, T. Grasser: "A New Physics-Based NBTI Model for DC-and AC-Stress Enabling Accurate Circuit Aging Simulations Considering Recovery"; Talk: 4. GMM/GI/ITG-Fachtagung Zuverlässigkeit und Entwurf (ZuE 2010), Wildbad Kreuth; 2010-09-13 - 2010-09-15; in "GMM- Fachbericht", (2010), 66, 33 - 40. BibTeX |
| 204. | F. Schanovsky, W. Gös, T. Grasser: "Hole Capture into Oxide Defects in MOS Structures from First Principles"; Poster: Ψk - 2010 Conference, Berlin; 2010-09-12 - 2010-09-16; in "Abstract Book", (2010), 435. BibTeX |
| 203. | K. Rupp, T. Grasser, A. Jüngel: "System Matrix Compression for Spherical Harmonics Expansions of the Boltzmann Transport Equation"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Bologna, Italy; 2010-09-06 - 2010-09-08; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2010), ISBN: 978-1-4244-7699-2, 159 - 162 doi:10.1109/SISPAD.2010.5604542. BibTeX |
| 202. | I. Starkov, S. E. Tyaginov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser: "Analysis of Worst-Case Hot-Carrier Conditions for High Voltage Transistors Based on Full-Band Monte-Carlo Simulations"; Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2010-07-05 - 2010-07-09; in "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9, 139 - 144. BibTeX |
| 201. | S. E. Tyaginov, I. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser: "Hot-Carrier Degradation Modeling Using Full-Band Monte-Carlo Simulations"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2010-07-05 - 2010-07-09; in "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9, 341 - 345. BibTeX |
| 200. | P.-J. Wagner, T. Grasser, H. Reisinger, B. Kaczer: "Oxide Traps in MOS Transistors: Semi-Automatic Extraction of Trap Parameters from Time Dependent Defect Spectroscopy"; Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2010-07-05 - 2010-07-09; in "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9, 134 - 138. BibTeX |
| 199. | B. Kaczer, T. Grasser, J. Franco, M. Toledano-Luque, Ph. J. Roussel, G. Groeseneken: "Recent Trends in Bias Temperature Instability"; Talk: Workshop on Dielectrics in Microelectronics (WODIM), Bratislava; (invited) 2010-06-28 - 2010-06-30; in "Book of Abstracts", (2010), 55. BibTeX |
| 198. | F. Schanovsky, W. Gös, T. Grasser: "Mulit-Phonon Hole-Trapping from First-Principles"; Talk: Workshop on Dielectrics in Microelectronics (WODIM), Bratislava; 2010-06-28 - 2010-06-30; in "Book of Abstracts", (2010), 54. BibTeX |
| 197. | I. Starkov, S. E. Tyaginov, H. Enichlmair, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Ceric, T. Grasser: "HC Degradation Model: Interface State Profile-Simulations vs. Experiment"; Poster: Workshop on Dielectrics in Microelectronics (WODIM), Bratislava; 2010-06-28 - 2010-06-30; in "Book of Abstracts", (2010), 128. BibTeX |
| 196. | M. Toledano-Luque, B. Kaczer, Ph. J. Roussel, T. Grasser, G. Groeseneken: "Temperature Dependence of the Emission and Capture Times of SiON Individual Traps after Positive Bias Temperature Stress"; Talk: Workshop on Dielectrics in Microelectronics (WODIM), Bratislava; 2010-06-28 - 2010-06-30; in "Book of Abstracts", (2010), 28. BibTeX |
| 195. | T. Aichinger, S. Puchner, M. Nelhiebel, T. Grasser, H. Hutter: "Impact of Hydrogen on Recoverable and Permanent Damage following Negative Bias Temperature Stress"; Talk: International Reliability Physics Symposium (IRPS), Anaheim; 2010-05-02 - 2010-05-06; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2010), ISBN: 978-1-4244-5431-0, 1063 - 1068. BibTeX |
| 194. | J. Franco, B. Kaczer, M. Cho, G. Eneman, G. Groeseneken, T. Grasser: "Improvements of NBTI Reliability in SiGe p-FETs"; Talk: International Reliability Physics Symposium (IRPS), Anaheim; 2010-05-02 - 2010-05-06; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2010), ISBN: 978-1-4244-5431-0, 1082 - 1085. BibTeX |
| 193. | T. Grasser, H. Reisinger, P. Wagner, B. Kaczer, F. Schanovsky, W. Gös: "The Time Dependent Defect Spectroscopy (TDDS) for the Characterization of the Bias Temperature Instability"; Talk: International Reliability Physics Symposium (IRPS), Anaheim; 2010-05-02 - 2010-05-06; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2010), ISBN: 978-1-4244-5431-0, 16 - 25. BibTeX |
| 192. | B. Kaczer, T. Grasser, Ph. J. Roussel, J. Franco, R. Degraeve, L. Ragnarsson, E. Simoen, G. Groeseneken, H. Reisinger: "Origin of NBTI Variability in Deeply Scaled pFETs"; Talk: International Reliability Physics Symposium (IRPS), Anaheim; 2010-05-02 - 2010-05-06; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2010), ISBN: 978-1-4244-5431-0, 26 - 32. BibTeX |
| 191. | G. Pobegen, T. Aichinger, M. Nelhiebel, T. Grasser: "Dependence of the Negative Bias Temperature Instability on the Gate Oxide Thickness"; Talk: International Reliability Physics Symposium (IRPS), Anaheim; 2010-05-02 - 2010-05-06; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2010), ISBN: 978-1-4244-5431-0, 1073 - 1077. BibTeX |
| 190. | H. Reisinger, T. Grasser, C. Schlunder, W. Gustin: "The Statistical Analysis of Individual Defects constituting NBTI and its Implications for Modeling DC- and AC-Stress"; Talk: International Reliability Physics Symposium (IRPS), Anaheim; 2010-05-02 - 2010-05-06; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2010), ISBN: 978-1-4244-5431-0, 7 - 15. BibTeX |
| 189. | J. Ryan, P. Lenahan, T. Grasser, H. Enichlmair: "Recovery-Free Electron Spin Resonance Observations of NBTI Degradation"; Talk: International Reliability Physics Symposium (IRPS), Anaheim; 2010-05-02 - 2010-05-06; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2010), ISBN: 978-1-4244-5431-0, 43 - 49. BibTeX |
| 188. | K. Rupp, T. Grasser, A. Jüngel: "A Matrix Compression Scheme for Spherical Harmonics Expansions of the Boltzmann Transport Equation"; Talk: Junior Scientist Conference 2010 (JSC 2010), Wien; 2010-04-07 - 2010-04-09; in "Proceedings of the Junior Scientist Conference 2010", (2010), ISBN: 978-3-200-01797-9, 7 - 8. BibTeX |
| 187. | T. Grasser, H. Reisinger, W. Gös, T. Aichinger, Ph. Hehenberger, P.-J. Wagner, M. Nelhiebel, J. Franco, B. Kaczer: "Switching Oxide Traps as the Missing Link Between Negative Bias Temperature Instability and Random Telegraph Noise"; Talk: IEEE International Electron Devices Meeting (IEDM), Baltimore, MD, USA; 2009-12-07 - 2009-12-09; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2009), 1 - 4 doi:10.1109/IEDM.2009.5424235. BibTeX |
| 186. | B. Bindu, W. Gös, B. Kaczer, T. Grasser: "Analytical Solution of the Switching Trap Model for Negative Bias Temperature Stress"; Talk: IEEE International Reliability Workshop (IIRW), S. Lake Tahoe; 2009-10-18 - 2009-10-22; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2009), ISBN: 978-1-4244-3921-8, 93 - 96. BibTeX |
| 185. | H. Reisinger, T. Grasser, C. Schlünder: "A Study of NBTI by the Statistical Analysis of the Properties of Individual Defects in pMOSFETS"; Talk: IEEE International Reliability Workshop (IIRW), S. Lake Tahoe; 2009-10-18 - 2009-10-22; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2009), ISBN: 978-1-4244-3921-8, 30 - 35. BibTeX |
| 184. | J. Ryan, P. Lenahan, T. Grasser, H. Enichlmair: "What Triggers NBTI? An "On The Fly" Electron Spin Resonance Approach"; Talk: IEEE International Reliability Workshop (IIRW), S. Lake Tahoe; 2009-10-18 - 2009-10-22; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2009), ISBN: 978-1-4244-3921-8, 42 - 45. BibTeX |
| 183. | R. Southwick III, B. Knowlton, B. Kaczer, T. Grasser: "On the Thermal Activation of Negative Bias Temperature Instability"; Talk: IEEE International Reliability Workshop (IIRW), S. Lake Tahoe; 2009-10-18 - 2009-10-22; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2009), ISBN: 978-1-4244-3921-8, 36 - 41. BibTeX |
| 182. | Ph. Hehenberger, P.-J. Wagner, H. Reisinger, T. Grasser: "On the Temperature and Voltage Dependence of Short-Term Negative Bias Temperature Stress"; Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Bordeaux; 2009-10-05 - 2009-10-09; in "Proceedings of the 20th European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2009), 4 page(s) . BibTeX |
| 181. | S. E. Tyaginov, V. Sverdlov, W. Gös, T. Grasser: "Impact of O-Si-O Bond Angle Fluctuations on the Si-O Bond-Breakage Rate"; Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Bordeaux; 2009-10-05 - 2009-10-09; in "Proceedings of the 20th European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2009), . BibTeX |
| 180. | Ph. Hehenberger, P.-J. Wagner, H. Reisinger, T. Grasser: "Comparison of Fast Measurement Methods for Short-Term Negative Bias Temperature Stress and Relaxation"; Talk: European Solid-State Device Research Conference (ESSDERC), Athens; 2009-09-14 - 2009-09-18; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2009), ISBN: 978-1-4244-4351-2, 311 - 314. BibTeX |
| 179. | W. Gös, T. Grasser, M. Karner, B. Kaczer: "A Model for Switching Traps in Amorphous Oxides"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego, CA, USA; 2009-09-09 - 2009-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2009), ISBN: 978-1-4244-3947-8, 159 - 162 doi:10.1109/SISPAD.2009.5290226. BibTeX |
| 178. | I. Starkov, S. E. Tyaginov, T. Grasser: "Green´s Function Asymptotic in Two-Layered Periodic Medium"; Talk: 17th International Symposium NANOSTRUCTURES: Physics and Technology, Minsk; 2009-06-22 - 2009-06-26; in "Proceedings of the International Symposium NANOSTRUCTURES: Physics and Technology", (2009), 111 - 112. BibTeX |
| 177. | P.-J. Wagner, T. Aichinger, T. Grasser, M. Nelhiebel, L.K.J. Vandamme: "Possible Correlation between Flicker Noise and Bias Temperature Stress"; Talk: International Conference on Noise and Fluctuations (ICNF), Pisa; 2009-06-14 - 2009-06-19; in "Proceedings of the 20th International Conference on Noise and Fluctuations", (2009), 621 - 624. BibTeX |
| 176. | V. Sverdlov, M. Vasicek, J. Cervenka, T. Grasser, H. Kosina, S. Selberherr: "Transport in Nanostructures: A Comparative Analysis Using Monte Carlo Simulation, the Spherical Harmonic Method, and Higher Moments Models"; Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol; 2009-06-04 - 2009-06-08; in "Abstracts of the International Conference on Large-Scale Scientific Computations (LSSC)", (2009), 93. BibTeX |
| 175. | S. E. Tyaginov, V. Sverdlov, W. Gös, T. Grasser: "Statistics of Si-O Bond-Breakage Rate Variations induced by O-Si-O Angle Fluctuations"; Talk: International Workshop on Computational Electronics (IWCE), Beijing, China; 2009-05-27 - 2009-05-29; in "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2009), ISBN: 978-1-4244-3926-3, 29 - 32 doi:10.1109/IWCE.2009.5091156. BibTeX |
| 174. | T. Grasser, B. Kaczer: "Critical Modeling Issues in Negative Bias Temperature Instability"; Talk: 215th ECS Meeting, San Francisco; (invited) 2009-05-24 - 2009-05-29; in "Meeting Abstracts MA 2009-01", (2009), ISSN: 1091-8213, 793. BibTeX |
| 173. | T. Aichinger, M. Nelhiebel, T. Grasser: "On the Temperature Dependence of NBTI Recovery"; Talk: International Reliability Physics Symposium (IRPS), Montreal; (invited) 2009-04-26 - 2009-04-30; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2009), 1. BibTeX |
| 172. | T. Aichinger, M. Nelhiebel, T. Grasser: "Unambiguous Identification of the NBTI Recovery Mechanism using Ultra-Fast Temperature Changes"; Talk: International Reliability Physics Symposium (IRPS), Montreal; 2009-04-26 - 2009-04-30; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2009), 2 - 7. BibTeX |
| 171. | T. Grasser, B. Kaczer, W. Gös, T. Aichinger, Ph. Hehenberger, M. Nelhiebel: "A Two-Stage Model for Negative Bias Temperature Instability"; Talk: International Reliability Physics Symposium (IRPS), Montreal; 2009-04-26 - 2009-04-30; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2009), 33 - 44. BibTeX |
| 170. | Ph. Hehenberger, T. Aichinger, T. Grasser, W. Gös, O. Triebl, B. Kaczer, M. Nelhiebel: "Do NBTI-Induced Interface States Show Fast Recovery? A Study Using a Corrected On-The-Fly Charge-Pumping Measurement Technique"; Poster: International Reliability Physics Symposium (IRPS), Montreal; 2009-04-26 - 2009-04-30; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2009), 1033 - 1038. BibTeX |
| 169. | B. Kaczer, T. Grasser, J. Martin-Martinez, E. Simoen, M. Aoulaiche, Ph. J. Roussel, G. Groeseneken: "NBTI from the Perspective of Defect States with Widely Distributed Time Scales"; Talk: International Reliability Physics Symposium (IRPS), Montreal; 2009-04-26 - 2009-04-30; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2009), 55 - 60. BibTeX |
| 168. | S. E. Tyaginov, W. Gös, T. Grasser, V. Sverdlov, P. Schwaha, R. Heinzl, F. Stimpfl: "Description of Si-O Bond Breakage Using Pair-Wise Interatomic Potentials Under Consideration of the Whole Crystal"; Talk: International Reliability Physics Symposium (IRPS), Montreal; 2009-04-26 - 2009-04-30; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2009), 514 - 522. BibTeX |
| 167. | S. E. Tyaginov, V. Sverdlov, W. Gös, P. Schwaha, R. Heinzl, F. Stimpfl, T. Grasser: "Impact of the Surrounding Network on the Si-O Bond-Breakage Energetics"; Talk: Materials Research Society Spring Meeting (MRS), San Francisco; 2009-04-13 - 2009-04-17; in "Proceedings of the 2009 MRS Spring Meeting", (2009), . BibTeX |
| 166. | S. E. Tyaginov, V. Sverdlov, W. Gös, P. Schwaha, R. Heinzl, F. Stimpfl, T. Grasser: "Si-O Bond-Breakage Energetics under Consideration of the Whole Crystal"; Talk: International Semiconductor Technology Conference & China Semiconductor Technology International Conference, Shanghai; 2009-03-19 - 2009-03-20; in "Proceedings of the International Semiconductor Technology Conference & China Semiconductor Technology International Conference", (2009), 84. BibTeX |
| 165. | T. Grasser: "Towards Understanding Negative Bias Temperature Instability"; IEEE Conference Proceedings, in "Integrated Reliability Workshop Final Report (12-16 Oct. 2008)", (2008), 145 doi:10.1109/IRWS.2008.4796110. BibTeX |
| 164. | T. Grasser, B. Kaczer, T. Aichinger, W. Gös, M. Nelhiebel: "Defect Creation Stimulated by Thermally Activated Hole Trapping as the Driving Force Behind Negative Bias Temperature Instability in SiO2, SiON, and High-k Gate Stacks"; Talk: IEEE International Reliability Workshop (IIRW), Fallen Leaf Lake; 2008-10-18 - 2008-10-22; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2008), 91 - 95. BibTeX |
| 163. | H. Reisinger, R. Vollertsen, P.-J. Wagner, T. Huttner, A. Martin, S. Aresu, W. Gustin, T. Grasser, C. Schlünder: "The Effect of Recovery on NBTI Characterization of Thick Non-Nitrided Oxides"; Talk: IEEE International Reliability Workshop (IIRW), Fallen Leaf Lake; 2008-10-18 - 2008-10-22; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2008), 1 - 6. BibTeX |
| 162. | T. Grasser, B. Kaczer, W. Gös: "An Energy-Level Perspective of Bias Temperature Instability"; Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Maastricht; (invited) 2008-09-29 - 2008-10-02; in "Proceedings of the 19th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis", (2008), . BibTeX |
| 161. | W. Gös, M. Karner, S. E. Tyaginov, Ph. Hehenberger, T. Grasser: "Level Shifts and Gate Interfaces as Vital Ingredients in Modeling of Charge Trapping"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 2008-09-09 - 2008-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7, 69 - 72 doi:10.1109/SISPAD.2008.4648239. BibTeX |
| 160. | T. Grasser, W. Gös, B. Kaczer: "Modeling Bias Temperature Instability During Stress and Recovery"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 2008-09-09 - 2008-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7, 65 - 68 doi:10.1109/SISPAD.2008.4648238. BibTeX |
| 159. | M. Vasicek, J. Cervenka, M. Karner, T. Grasser: "Consistent Higher-Order Transport Models for SOI MOSFETs"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 2008-09-09 - 2008-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7, 129 - 132 doi:10.1109/SISPAD.2008.4648254. BibTeX |
| 158. | W. Gös, M. Karner, V. Sverdlov, T. Grasser: "A Rigorous Model for Trapping and Detrapping in Thin Gate Dielectrics"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2008-07-07 - 2008-07-11; in "Proceedings 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2008), ISBN: 978-1-4244-2039-1, 249 - 254. BibTeX |
| 157. | T. Grasser: "Negative Bias Temperature Instability: Modeling Challenges and Perspectives"; Talk: International Reliability Physics Symposium (IRPS), Phoenix (Tutorial); 2008-04-27 - 2008-05-01; in "2008 Reliability Physics Tutorial Notes", (2008), 113 - 120. BibTeX |
| 156. | T. Grasser, B. Kaczer, W. Gös: "An Energy-Level Perspective of Bias Temperature Instability"; Talk: International Reliability Physics Symposium (IRPS), Phoenix; 2008-04-27 - 2008-05-01; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2008), 28 - 38. BibTeX |
| 155. | B. Kaczer, T. Grasser, Ph. J. Roussel, J. Martin-Martinez, R. O´Connor, B. O´Sullivan, G. Groeseneken: "Ubiquitous Relaxation in BTI Stressing-New Evaluation and Insights"; Talk: International Reliability Physics Symposium (IRPS), Phoenix; 2008-04-27 - 2008-05-01; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2008), 20 - 27. BibTeX |
| 154. | M. Vasicek, J. Cervenka, M. Wagner, M. Karner, T. Grasser: "A 2D-Non-Parabolic Six Moments Model"; Talk: International Semiconductor Device Research Symposium (ISDRS), Maryland; 2007-12-12 - 2007-12-14; in "2007 International Semiconductor Device Research Symposium", (2007), ISBN: 978-1-4244-1892-3, 2 page(s) . BibTeX |
| 153. | T. Grasser, B. Kaczer, Ph. Hehenberger, W. Gös, R. Connor, H. Reisinger, W. Gustin, C. Schlünder: "Simultaneous Extraction of Recoverable and Permanent Components Contributing to Bias-Temperature Instability"; Talk: IEEE International Electron Devices Meeting (IEDM), Washington, DC, USA; 2007-12-10 - 2007-12-12; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2007), ISBN: 1-4244-1508-x, 801 - 804 doi:10.1109/IEDM.2007.4419069. BibTeX |
| 152. | W. Gös, T. Grasser: "Charging and Discharging of Oxide Defects in Reliability Issues"; Talk: IEEE International Reliability Workshop (IIRW), Fallen Leaf Lake; 2007-10-15 - 2007-10-18; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2007), ISBN: 1-4244-1171-8, 27 - 32. BibTeX |
| 151. | T. Grasser, P.-J. Wagner, Ph. Hehenberger, W. Gös, B. Kaczer: "A Rigorous Study of Measurement Techniques for Negative Bias Temperature Instability"; Talk: IEEE International Reliability Workshop (IIRW), Fallen Leaf Lake; 2007-10-15 - 2007-10-18; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2007), ISBN: 1-4244-1171-8, 6 - 11. BibTeX |
| 150. | M. Vasicek, J. Cervenka, M. Karner, M. Wagner, T. Grasser: "Parameter Modeling for Higher-Order Transport Models in UTB SOI MOSFETs"; Poster: International Workshop on Computational Electronics (IWCE), Amherst, MA, USA; 2007-10-08 - 2007-10-10; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2007), 96 - 97. BibTeX |
| 149. | W. Gös, T. Grasser: "First-Principles Investigation on Oxide Trapping"; Talk: T. Grasser, S. Selberherr (ed); International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 2007-09-25 - 2007-09-27; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2007), 12, ISBN: 978-3-211-72860-4, 157 - 160 doi:10.1007/978-3-211-72861-1_38. BibTeX |
| 148. | H. Kosina, O. Triebl, T. Grasser: "Box Method for the Convection-Diffusion Equation Based on Exponential Shape Functions"; Poster: T. Grasser, S. Selberherr (ed); International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 2007-09-25 - 2007-09-27; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2007), 12, ISBN: 978-3-211-72860-4, 317 - 320 doi:10.1007/978-3-211-72861-1_76. BibTeX |
| 147. | M. Vasicek, M. Karner, E. Ungersböck, M. Wagner, H. Kosina, T. Grasser: "Modeling of Macroscopic Transport Parameters in Inversion Layers"; Talk: T. Grasser, S. Selberherr (ed); International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 2007-09-25 - 2007-09-27; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2007), 12, ISBN: 978-3-211-72860-4, 201 - 204 doi:10.1007/978-3-211-72861-1_48. BibTeX |
| 146. | T. Grasser, B. Kaczer: "Negative Bias Temperature Instability: Recoverable versus Permanent Degradation"; Talk: European Solid-State Device Research Conference (ESSDERC), München; 2007-09-11 - 2007-09-13; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2007), ISBN: 1-4244-1124-6, 127 - 130. BibTeX |
| 145. | O. Triebl, T. Grasser: "Investigation of Vector Discretization Schemes for Box Volume Methods"; Talk: The Nanotechnology Conference and Trade Show, Santa Clara; 2007-05-20 - 2007-05-24; in "NSTI Nanotech Proceedings", (2007), 3, ISBN: 1-4200-6184-4, 61 - 64. BibTeX |
| 144. | O. Baumgartner, M. Karner, S. Holzer, M. Pourfath, T. Grasser, H. Kosina: "Adaptive Energy Integration of Non-Equilibrium Green´s Functions"; Poster: The Nanotechnology Conference and Trade Show, Santa Clara; 2007-05-19 - 2007-05-24; in "NSTI Nanotech Proceedings", (2007), 3, ISBN: 1-4200-6184-4, 145 - 148. BibTeX |
| 143. | T. Grasser, W. Gös, V. Sverdlov, B. Kaczer: "The Universality of NBTI Relaxation and its Implications for Modeling and Characterization"; Talk: International Reliability Physics Symposium (IRPS), Phoenix; 2007-04-15 - 2007-04-19; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2007), ISBN: 1-4244-0919-5, 268 - 280. BibTeX |
| 142. | W. Grabinski, T. Grasser, G. Gildenblat, G.-J. Smit, M. Bucher, A. Aarts, A. Tajic, Y. S. Chauhan, A. Napieralski, T.A. Fjeldly, B. Iniguez, G. Iannaccone, M. Kayal, W. Posch, G. Wachutka, F. Prégaldiny, CH. Lallement, L. Lemaitre: "MOS-AK: Open Compact Modeling Forum"; Talk: International Workshop on Compact Modeling (IWCM), Pacifico Yokohama, Japan; (invited) 2007-01-23 in "The 4th International Workshop on Compact Modeling", (2007), 1 - 11. BibTeX |
| 141. | M. Wagner, G. Span, S. Holzer, O. Triebl, T. Grasser: "Power Output Improvement of SiGe Thermoelectric Generators"; Talk: Meeting of the Electrochemical Society (ECS), Cancun; 2006-10-29 - 2006-11-03; in "Meeting Abstracts 2006 Joint International Meeting", (2006), ISSN: 1091-8213, 1 page(s) . BibTeX |
| 140. | R. Heinzl, M. Spevak, P. Schwaha, T. Grasser, S. Selberherr: "Performance Analysis for High-Precision Interconnect Simulation"; Talk: European Simulation and Modeling Conference (ESMC), Toulouse; 2006-10-23 - 2006-10-25; in "The 2006 European Simulation and Modelling Conference", (2006), ISBN: 9077381-30-9, 113 - 116. BibTeX |
| 139. | M. Spevak, R. Heinzl, P. Schwaha, T. Grasser, S. Selberherr: "A Generic Discretization Library"; Talk: Annual ACM Conference on Object-Oriented Programming, Systems, Languages and Applications (OOPSLA), Portland; 2006-10-22 - 2006-10-26; in "OOPSLA Proceedings", (2006), ISSN: 1652-926x, 95 - 100. BibTeX |
| 138. | T. Grasser, W. Gös, B. Kaczer: "Modeling of Dispersive Transport in the Context of Negative Bias Temperature Instability"; Talk: IEEE International Reliability Workshop (IIRW), S. Lake Tahoe; 2006-10-16 - 2006-10-19; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2006), ISBN: 1-4244-0297-2, 5 - 10. BibTeX |
| 137. | S. Holzer, M. Wagner, A. Sheikholeslami, M. Karner, G. Span, T. Grasser, S. Selberherr: "An Extendable Multi-Purpose Simulation and Optimization Framework for Thermal Problems in TCAD Applications"; Talk: Workshop on Thermal Investigations of ICs and Systems (THERMINIC), Nice; 2006-09-27 - 2006-09-29; in "Collection of Papers Presented at the 12th International Workshop on Thermal Investigation of ICs and Systems", (2006), ISBN: 2-9161-8704-9, 239 - 244. BibTeX |
| 136. | O. Triebl, T. Grasser: "Vector Discretization Schemes Based on Unstructured Neighbourhood Information"; Talk: International Semiconductor Conference CAS, Sinaia; 2006-09-27 - 2006-09-29; in "CAS 2006 Proceedings Vol. 2", (2006), ISBN: 1-4244-0109-7, 337 - 340. BibTeX |
| 135. | S. Dhar, E. Ungersböck, H. Kosina, T. Grasser, S. Selberherr: "Analytical Modeling of Electron Mobility in Strained Germanium"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 2006-09-06 - 2006-09-08; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5, 39 - 42 doi:10.1109/SISPAD.2006.282833. BibTeX |
| 134. | T. Grasser, R. Entner, O. Triebl, H. Enichlmair: "TCAD Modeling of Negative Bias Temperature Instability"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 2006-09-06 - 2006-09-08; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5, 330 - 333 doi:10.1109/SISPAD.2006.282902. BibTeX |
| 133. | H. Kosina, V. Sverdlov, T. Grasser: "Wigner Monte Carlo Simulation: Particle Annihilation and Device Applications"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 2006-09-06 - 2006-09-08; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5, 357 - 360 doi:10.1109/SISPAD.2006.282908. BibTeX |
| 132. | M. Wagner, G. Span, S. Holzer, T. Grasser: "Design Optimization of Large Area Si/SiGe Thermoelectric Generators"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 2006-09-06 - 2006-09-08; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5, 397 - 400 doi:10.1109/SISPAD.2006.282918. BibTeX |
| 131. | G. Span, M. Wagner, S. Holzer, T. Grasser: "Thermoelectric Power Conversion using Generation of Electron-Hole Pairs in Large Area p-n Junctions"; Talk: International Conference on Thermoelectrics, Vienna; 2006-08-06 - 2006-08-10; in "International Conference on Thermoelectrics", (2006), 6, ISBN: 1-4244-0811-3, 23 - 28. BibTeX |
| 130. | S. Holzer, M. Wagner, L. Friembichler, E. Langer, T. Grasser, S. Selberherr: "A Multi-Purpose Optimization Framework for TCAD Applications"; Talk: International Congress on Computational and Applied Mathematics (ICCAM), Leuven; 2006-07-10 - 2006-07-14; in "ICCAM 2006 Abstracts of Talks", (2006), 76. BibTeX |
| 129. | P. Schwaha, R. Heinzl, M. Spevak, T. Grasser: "A Generic Approach to Scientific Computing"; Talk: International Congress on Computational and Applied Mathematics (ICCAM), Leuven; 2006-07-10 - 2006-07-14; in "ICCAM 2006 Abstracts of Talks", (2006), 137. BibTeX |
| 128. | M. Spevak, R. Heinzl, P. Schwaha, T. Grasser: "Automatic Linearization using Functional Programming for Scientific Computing"; Talk: International Congress on Computational and Applied Mathematics (ICCAM), Leuven; 2006-07-10 - 2006-07-14; in "ICCAM 2006 Abstracts of Talks", (2006), 147. BibTeX |
| 127. | R. Heinzl, P. Schwaha, M. Spevak, T. Grasser: "Performance Aspects of a DSEL for Scientific Computing with C++"; Talk: Workshop on Parallel Object-Oriented Scientific Computing (POOSC), Nantes; 2006-07-03 - 2006-07-07; in "Proceedings of the POOSC Conference", (2006), 37 - 41. BibTeX |
| 126. | S. Holzer, Ch. Hollauer, H. Ceric, M. Karner, T. Grasser, E. Langer, S. Selberherr: "Three-Dimensional Transient Interconnect Analysis With Regard to Mechanical Stress"; Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2006-07-03 - 2006-07-07; in "Proceedings 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2006), ISBN: 1-4244-0206-9, 154 - 157. BibTeX |
| 125. | R. Entner, T. Grasser, H. Enichlmair, R. Minixhofer: "Negative Bias Temperature Instability Modeling for High-Voltage Oxides at Different Stress Temperatures"; Talk: Workshop on Dielectrics in Microelectronics (WODIM), Catania; 2006-06-26 - 2006-06-28; in "WODIM 2006 14th Workshop on Dielectrics in Microelectronics Workshop Programme and Abstracts", (2006), 96 - 97. BibTeX |
| 124. | S. Holzer, A. Sheikholeslami, M. Karner, T. Grasser: "Comparison of Deposition Models for TEOS CVD Process"; Talk: Workshop on Dielectrics in Microelectronics (WODIM), Catania; 2006-06-26 - 2006-06-28; in "WODIM 2006 14th Workshop on Dielectrics in Microelectronics Workshop Programme and Abstracts", (2006), 158 - 159. BibTeX |
| 123. | M. Karner, A. Gehring, M. Wagner, R. Entner, S. Holzer, W. Gös, M. Vasicek, T. Grasser, H. Kosina, S. Selberherr: "VSP-A Gate Stack Analyzer"; Talk: Workshop on Dielectrics in Microelectronics (WODIM), Catania; 2006-06-26 - 2006-06-28; in "WODIM 2006 14th Workshop on Dielectrics in Microelectronics Workshop Program and Abstracts", (2006), 101 - 102. BibTeX |
| 122. | T. Grasser, S. Selberherr: "Modeling of Negative Bias Temperature Instability"; Talk: Symposium Diagnostics & Yield: Advanced Silicon Devices and Technologies for ULSI ERA, Warszawa; (invited) 2006-06-25 - 2006-06-28; in "Abstracts 7th Symposium Diagnostics & Yield: Advanced Silicon Devices and Technologies for ULSI ERA", (2006), 1 - 2. BibTeX |
| 121. | R. Heinzl, M. Spevak, P. Schwaha, T. Grasser: "A High Performance Generic Scientific Simulation Environment"; Talk: Workshop on State-of-the-Art in Scientific and Parallel Computing (PARA), Umea; 2006-06-18 - 2006-06-21; in "Proceedings of the PARA Conference", (2006), 61. BibTeX |
| 120. | P. Schwaha, R. Heinzl, M. Spevak, T. Grasser: "Advanced Equation Processing for TCAD"; Talk: Workshop on State-of-the-Art in Scientific and Parallel Computing (PARA), Umea; 2006-06-18 - 2006-06-21; in "Proceedings of the PARA Conference", (2006), 64. BibTeX |
| 119. | M. Spevak, R. Heinzl, P. Schwaha, T. Grasser: "A Computational Framework for Topological Operations"; Talk: Workshop on State-of-the-Art in Scientific and Parallel Computing (PARA), Umea; 2006-06-18 - 2006-06-21; in "Proceedings of the PARA Conference", (2006), 57. BibTeX |
| 118. | S. Dhar, E. Ungersböck, H. Kosina, T. Grasser, S. Selberherr: "Electron Mobility Model for <110> Stressed Si Including Strain-Dependent Mass"; Poster: Silicon Nanoelectronics Workshop, Honolulu; 2006-06-11 - 2006-06-12; in "Abstracts IEEE 2006 Silicon Nanoelectronics Workshop", (2006), 153 - 154. BibTeX |
| 117. | R. Entner, T. Grasser, H. Enichlmair, R. Minixhofer: "Influence of Interface and Oxide Traps on Negative Bias Temperature Instability"; Poster: Silicon Nanoelectronics Workshop, Honolulu; 2006-06-11 - 2006-06-12; in "Abstracts IEEE 2006 Silicon Nanoelectronics Workshop", (2006), 163 - 164. BibTeX |
| 116. | M. Karner, A. Gehring, S. Holzer, M. Pourfath, M. Wagner, H. Kosina, T. Grasser, S. Selberherr: "VSP - A Multi-Purpose Schrödinger-Poisson Solver for TCAD Applications"; Poster: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 2006-05-25 - 2006-05-27; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1, 255 - 256. BibTeX |
| 115. | V. Sverdlov, T. Grasser, H. Kosina, S. Selberherr: "Scattering and Space-Charge Effects in Wigner Monte Carlo Simulations of Single and Double Barrier Devices"; Talk: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 2006-05-25 - 2006-05-27; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1, 29 - 30. BibTeX |
| 114. | M. Wagner, T. Grasser, M. Karner, H. Kosina: "Quantum Correction for DG MOSFETs"; Poster: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 2006-05-25 - 2006-05-27; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1, 87 - 88. BibTeX |
| 113. | R. Heinzl, M. Spevak, P. Schwaha, T. Grasser: "High Performance Process and Device Simulation with a Generic Environment"; Talk: Iranian Conference on Electrical Engineering (ICEE), Tehran; 2006-05-16 - 2006-05-18; in "Proceedings of the 14th Iranian Conference on Electrical Engineering ICEE 2006", (2006), 4 page(s) . BibTeX |
| 112. | A. Sheikholeslami, R. Heinzl, S. Holzer, C. Heitzinger, M. Spevak, M. Leicht, O. Häberlen, J. Fugger, F. Badrieh, F. Parhami, H. Puchner, T. Grasser, S. Selberherr: "Applications of Two- and Three-Dimensional General Topography Simulator in Semiconductor Manufacturing Processes"; Talk: Iranian Conference on Electrical Engineering (ICEE), Tehran; 2006-05-16 - 2006-05-18; in "Proceedings of the 14th Iranian Conference on Electrical Engineering ICEE 2006", (2006), 4 page(s) . BibTeX |
| 111. | S. Dhar, H. Kosina, G. Karlowatz, E. Ungersböck, T. Grasser, S. Selberherr: "A Tensorial High-Field Electron Mobility Model for Strained Silicon"; Poster: International SiGe Technology and Device Meeting (ISTDM), Princeton; 2006-05-15 - 2006-05-17; in "2006 International SiGe Technology and Device Meeting Conference Digest", (2006), ISBN: 1-4244-0461-4, 72 - 73. BibTeX |
| 110. | M. Wagner, G. Span, T. Grasser: "Thermoelectric Power Generation Using Large Area Si/SiGe pn-Junctions With Varying Ge-Content"; Talk: International SiGe Technology and Device Meeting (ISTDM), Princeton; 2006-05-15 - 2006-05-17; in "2006 International SiGe Technology and Device Meeting Conference Digest", (2006), ISBN: 1-4244-0461-4, 216 - 217. BibTeX |
| 109. | R. Heinzl, M. Spevak, P. Schwaha, T. Grasser: "A Generic Scientific Simulation Environment for Multidimensional Simulation in the Area of TCAD"; Poster: The Nanotechnology Conference and Trade Show, Boston; 2006-05-07 - 2006-05-11; in "NSTI Nanotech Proceedings", (2006), ISBN: 0-9767985-8-1, 526 - 529. BibTeX |
| 108. | R. Heinzl, M. Spevak, P. Schwaha, T. Grasser: "Multidimensional and Multitopological TCAD with a Generic Scientific Simulation Environment"; Talk: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Playa del Carmen; 2006-04-26 - 2006-04-28; in "Proceedings International Caribbean Conference on Devices, Circuits and Systems", (2006), ISBN: 1-4244-0042-2, 173 - 176. BibTeX |
| 107. | P. Schwaha, R. Heinzl, W. Brezna, J. Smoliner, H. Enichlmair, R. Minixhofer, T. Grasser: "Leakage Current Analysis of a Real World Silicon-Silicon Dioxide Capacitance"; Talk: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Playa del Carmen; 2006-04-26 - 2006-04-28; in "Proceedings International Caribbean Conference on Devices, Circuits and Systems", (2006), ISBN: 1-4244-0042-2, 365 - 370. BibTeX |
| 106. | R. Entner, T. Grasser, H. Enichlmair, R. Minixhofer: "Investigation of NBTI Recovery During Measurement"; Talk: Materials Research Society Spring Meeting (MRS), San Francisco; 2006-04-17 - 2006-04-21; in "San Francisco 2006 MRS Meeting Abstracts", (2006), 110 - 111. BibTeX |
| 105. | M. Karner, M. Wagner, T. Grasser, H. Kosina: "A Physically Based Quantum Correction Model for DG MOSFETs"; Talk: Materials Research Society Spring Meeting (MRS), San Francisco; 2006-04-17 - 2006-04-21; in "San Francisco 2006 MRS Meeting Abstracts", (2006), 104 - 105. BibTeX |
| 104. | M. Spevak, R. Heinzl, P. Schwaha, T. Grasser: "Process and Device Simulation With a Generic Scientific Simulation Environment"; Talk: International Conference on Microelectronics (MIEL), Beograd; 2006-04-14 - 2006-04-17; in "Proceedings International Conference on Microelectronics (MIEL)", (2006), ISBN: 1-4244-0116-x, 475 - 478. BibTeX |
| 103. | R. Heinzl, P. Schwaha, M. Spevak, T. Grasser: "Concepts for High Performance Generic Scientific Computing"; Talk: International Symposium on Mathematical Modeling (MATHMOD), Wien; 2006-02-08 - 2006-02-10; in "5th Mathmod Vienna Proceedings", (2006), ISBN: 3-901608-30-3, 4-1 - 4-9. BibTeX |
| 102. | M. Spevak, R. Heinzl, P. Schwaha, T. Grasser: "Simulation of Microelectronic Structures Using A Posteriori Error Estimation and Mesh Optimization"; Talk: International Symposium on Mathematical Modeling (MATHMOD), Wien; 2006-02-08 - 2006-02-10; in "5th Mathmod Vienna Proceedings", (2006), ISBN: 3-901608-30-3, 5-1 - 5-8. BibTeX |
| 101. | M. Wagner, M. Karner, T. Grasser: "Quantum Correction Models for Modern Semiconductor Devices"; Poster: International Workshop on the Physics of Semiconductor Devices (IWPSD), New Dehli; 2005-12-13 - 2005-12-17; in "Proceedings of the XIII International Workshop on Semiconductor Devices", (2005), Vol. 1, 458 - 461. BibTeX |
| 100. | R. Heinzl, P. Schwaha, M. Spevak, T. Grasser: "Adaptive Mesh Generation for TCAD with Guaranteed Error Bounds"; Talk: European Simulation and Modeling Conference (ESMC), Porto; 2005-10-26 - 2005-10-28; in "The 2005 European Simulation and Modelling Conference Proceedings", (2005), ISBN: 90-77381-22-8, 425 - 429. BibTeX |
| 99. | E. Al-Ani, R. Heinzl, P. Schwaha, T. Grasser, S. Selberherr: "Three-Dimensional State-Of-The-Art Topography Simulation"; Talk: European Simulation and Modeling Conference (ESMC), Porto; 2005-10-24 - 2005-10-26; in "The 2005 European Simulation and Modelling Conference Proceedings", (2005), ISBN: 90-77381-22-8, 430 - 432. BibTeX |
| 98. | P. Schwaha, R. Heinzl, W. Brezna, J. Smoliner, H. Enichlmair, R. Minixhofer, T. Grasser: "Fully Three-Dimensional Analysis of Leakage Current in Non-Planar Oxides"; Talk: European Simulation and Modeling Conference (ESMC), Porto; 2005-10-24 - 2005-10-26; in "The 2005 European Simulation and Modelling Conference Proceedings", (2005), ISBN: 90-77381-22-8, 469 - 473. BibTeX |
| 97. | M. Spevak, T. Grasser: "Discretisation Schemes For Macroscopic Transport Equations on Non-Cartesian Coordinate Systems"; Talk: European Simulation and Modeling Conference (ESMC), Porto; 2005-10-24 - 2005-10-26; in "The 2005 European Simulation and Modelling Conference Proceedings", (2005), ISBN: 90-77381-22-8, 474 - 478. BibTeX |
| 96. | R. Entner, A. Gehring, H. Kosina, T. Grasser, S. Selberherr: "Modeling of Tunneling Currents for Highly Degraded CMOS Devices"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 2005-09-01 - 2005-09-03; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5, 219 - 222 doi:10.1109/SISPAD.2005.201512. BibTeX |
| 95. | R. Heinzl, T. Grasser: "Generalized Comprehensive Approach for Robust Three-Dimensional Mesh Generation for TCAD"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 2005-09-01 - 2005-09-03; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5, 211 - 214 doi:10.1109/SISPAD.2005.201510. BibTeX |
| 94. | P. Schwaha, R. Heinzl, M. Spevak, T. Grasser: "Coupling Three-Dimensional Mesh Adaptation with an A Posteriori Error Estimator"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 2005-09-01 - 2005-09-03; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5, 235 - 238 doi:10.1109/SISPAD.2005.201516. BibTeX |
| 93. | A. Sheikholeslami, F. Parhami, R. Heinzl, E. Al-Ani, C. Heitzinger, F. Badrieh, H. Puchner, T. Grasser, S. Selberherr: "Applications of Three-Dimensional Topography Simulation in the Design of Interconnect Lines"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 2005-09-01 - 2005-09-03; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5, 187 - 190 doi:10.1109/SISPAD.2005.201504. BibTeX |
| 92. | G. Span, M. Wagner, T. Grasser: "Thermoelectric Power Generation Using Large Area pn-Junctions"; Talk: European Conference on Thermoelectrics (ECT), Nancy; 2005-09-01 - 2005-09-02; in "The 3rd European Conference on Thermoelectrics Proceedings ECT2005", (2005), 72 - 75. BibTeX |
| 91. | R. Heinzl, M. Spevak, P. Schwaha, T. Grasser: "A Novel Technique for Coupling Three Dimensional Mesh Adaption With An A Posteriori Error Estimator"; Talk: PhD Research in Microelectronics and Electronics (PRIME), Lausanne; 2005-07-25 - 2005-07-28; in "2005 PhD Research in Microelectronics and Electronics", (2005), Vol. 1, ISBN: 0-7803-9345-7, 175 - 178. BibTeX |
| 90. | A. Sheikholeslami, S. Holzer, C. Heitzinger, M. Leicht, O. Häberlen, J. Fugger, T. Grasser, S. Selberherr: "Inverse Modeling of Oxid Deposition Using Measurements of a TEOS CVD Process"; Talk: PhD Research in Microelectronics and Electronics (PRIME), Lausanne; 2005-07-25 - 2005-07-28; in "2005 PhD Research in Microelectronics and Electronics", (2005), Vol. 2, ISBN: 0-7803-9345-7, 279 - 282. BibTeX |
| 89. | H. Ceric, V. Deshpande, Ch. Hollauer, S. Holzer, T. Grasser, S. Selberherr: "Comprehensive Analysis of Vacancy Dynamics Due to Electromigration"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2005-06-27 - 2005-07-01; in "Proceedings of the 12th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2005), ISBN: 0-7803-9301-5, 100 - 103. BibTeX |
| 88. | Ch. Hollauer, S. Holzer, H. Ceric, S. Wagner, T. Grasser, S. Selberherr: "Investigation of Thermo-Mechanical Stress in Modern Interconnect Layouts"; Talk: International Congress on Thermal Stresses (TS), Wien; 2005-05-26 - 2005-05-29; in "Proceedings of The Sixth International Congress on Thermal Stresses", (2005), Vol. 2, ISBN: 3-901167-12-9, 637 - 640. BibTeX |
| 87. | R. Entner, A. Gehring, H. Kosina, T. Grasser, S. Selberherr: "Impact of Multi-Trap Assisted Tunneling on Gate Leakage of CMOS Memory Devices"; Talk: The Nanotechnology Conference and Trade Show, Anaheim; 2005-05-08 - 2005-05-12; in "NSTI Nanotech Technical Proceedings", (2005), Vol. 3 (CDROM ISBN 0-9767985-4-9), ISBN: 0-9767985-2-2, 45 - 48. BibTeX |
| 86. | S. Holzer, Ch. Hollauer, H. Ceric, S. Wagner, R. Entner, E. Langer, T. Grasser, S. Selberherr: "Three-Dimensional Transient Electro-Thermal Interconnect Simulation for Stress and Electromigration Analysis"; Poster: The Nanotechnology Conference and Trade Show, Anaheim; 2005-05-08 - 2005-05-12; in "NSTI Nanotech Technical Proceedings", (2005), Vol. 3 (CDROM ISBN: 0-9767985-4-9), ISBN: 0-9767985-2-2, 620 - 623. BibTeX |
| 85. | C. Jungemann, T. Grasser, B. Neinhüs, B. Meinerzhagen: "Failure of Macroscopic Transport Models in Nanoscale Devices near Equilibrium"; Talk: The Nanotechnology Conference and Trade Show, Anaheim; 2005-05-08 - 2005-05-12; in "NSTI Nanotech Technical Proceedings", (2005), Vol. 3 (CDROM ISBN 0-9767985-4-9), ISBN: 0-9767985-2-2, 25 - 28. BibTeX |
| 84. | A. Sheikholeslami, E. Al-Ani, R. Heinzl, C. Heitzinger, F. Parhami, F. Badrieh, H. Puchner, T. Grasser, S. Selberherr: "Level Set Method Based General Topography Simulator and its Application in Interconnect Processes"; Poster: International Conference on Ultimate Integration of Silicon (ULIS), Bologna; 2005-04-07 - 2005-04-08; in "ULIS 2005 6th International Conference on Ultimate Integration of Silicon", (2005), ISBN: 8890084707, 139 - 142. BibTeX |
| 83. | S. Wagner, T. Grasser, S. Selberherr: "Physical Modeling of Semiconductor Devices for Microwave Applications"; Talk: Asia Pacific Microwave Conference (APMC), New Delhi; (invited) 2004-12-15 - 2004-12-18; in "Asia Pacific Microwave Conference 2004. Abstracts and Proceedings (CDROM)", (2004), ISBN: 81-7764-722-9, 4 page(s) . BibTeX |
| 82. | W. Wessner, S. Wagner, T. Grasser, S. Selberherr: "Meshing Aspects on Three-Dimensional Fin-Fet Device Simulations"; Talk: Asia Pacific Microwave Conference (APMC), New Delhi; 2004-12-15 - 2004-12-18; in "Asia Pacific Microwave Conference 2004, Abstracts and Proceedings (CDROM)", (2004), ISBN: 81-7764-722-9, 4 page(s) . BibTeX |
| 81. | T. Grasser, R. Kosik, C. Jungemann, H. Kosina, B. Meinerzhagen, S. Selberherr: "A Non-Parabolic Six Moments Model for the Simulation of Sub-100 nm Devices"; Talk: International Workshop on Computational Electronics (IWCE), West Lafayette, IN, USA; 2004-10-24 - 2004-10-27; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2004), ISBN: 0-7803-8649-3, 36 - 37 doi:10.1109/IWCE.2004.1407308. BibTeX |
| 80. | T. Ayalew, T. Grasser, H. Kosina, S. Selberherr: "Accurate Modeling of Lattice Site-Dependent Ionization Level of Impurities in α-SiC Devices"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 2004-09-02 - 2004-09-04; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2004), ISBN: 3211224688, 295 - 298 doi:10.1007/978-3-7091-0624-2_69. BibTeX |
| 79. | H. Ceric, R. Sabelka, S. Holzer, W. Wessner, S. Wagner, T. Grasser, S. Selberherr: "The Evolution of the Resistance and Current Density During Electromigration"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 2004-09-02 - 2004-09-04; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2004), ISBN: 3211224688, 331 - 334 doi:10.1007/978-3-7091-0624-2_78. BibTeX |
| 78. | T. Grasser, C. Jungemann, H. Kosina, B. Meinerzhagen, S. Selberherr: "Advanced Transport Models for Sub-Micrometer Devices"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; (invited) 2004-09-02 - 2004-09-04; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2004), ISBN: 3211224688, 1 - 8 doi:10.1007/978-3-7091-0624-2_1. BibTeX |
| 77. | T. Grasser, H. Kosina, S. Selberherr: "On the Validity of the Relaxation Time Approximation for Macroscopic Transport Models"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 2004-09-02 - 2004-09-04; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2004), ISBN: 3211224688, 109 - 112 doi:10.1007/978-3-7091-0624-2_26. BibTeX |
| 76. | S. Wagner, T. Grasser, S. Selberherr: "Performance Evaluation of Linear Solvers Employed for Semiconductor Device Simulation"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 2004-09-02 - 2004-09-04; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2004), ISBN: 3211224688, 351 - 354 doi:10.1007/978-3-7091-0624-2_83. BibTeX |
| 75. | T. Ayalew, T. Grasser, H. Kosina, S. Selberherr: "Accurate Modeling of Lattice Site-Dependent Incomplete Ionization in α-SiC Devices"; Poster: European Conference on Silicon Carbide and Related Materials (ECSCRM), Bologna; 2004-08-31 - 2004-09-04; in "5th European Conference on Silicon Carbide and Related Materials Book of Abstracts", (2004), 92 - 93. BibTeX |
| 74. | T. Ayalew, S. Kim, T. Grasser, S. Selberherr: "SiC Power Rectifier With Improved Switching Performance "Numerical Analysis of Merged PiN Schottky Diode""; Poster: European Conference on Silicon Carbide and Related Materials (ECSCRM), Bologna; 2004-08-31 - 2004-09-04; in "5th European Conference on Silicon Carbide and Related Materials Book of Abstracts", (2004), 476 - 477. BibTeX |
| 73. | T. Ayalew, S. Wagner, T. Grasser, S. Selberherr: "Numerical Simulation of Microwave MESFETs in 4H-SiC Fabricated Using Epitaxial Layers on Semi-Insulating Substrates"; Poster: European Conference on Silicon Carbide and Related Materials (ECSCRM), Bologna; 2004-08-31 - 2004-09-04; in "5th European Conference on Silicon Carbide and Related Materials Book of Abstracts", (2004), 76 - 77. BibTeX |
| 72. | S.-C. Kim, W. Bahng, N.-K. Kim, T. Ayalew, T. Grasser, S. Selberherr: "Numerical Simulation and Optimization for 900V 4H-SiC DiMOSFET fabrication"; Poster: European Conference on Silicon Carbide and Related Materials (ECSCRM), Bologna; 2004-08-31 - 2004-09-04; in "5th European Conference on Silicon Carbide and Related Materials Book of Abstracts", (2004), 492 - 493. BibTeX |
| 71. | S. Wagner, T. Grasser, C. Fischer, S. Selberherr: "Concepts and Implementation of an Advanced Equation Assembly Module"; Talk: World Multiconference on Systemics, Cybernetics and Informatics (SCI), Orlando; 2004-07-18 - 2004-07-21; in "The 8th World Multi-Conference on Systemics, Cybernetics and Informatics", (2004), ISBN: 980-6560-13-2, 150 - 155. BibTeX |
| 70. | S. Wagner, T. Grasser, S. Selberherr: "Benchmarking Linear Solvers with Semiconductor Simulation Examples"; Talk: International Conference on Scientific and Engineering Computation (ICSEC), Singapore; 2004-06-30 - 2004-07-02; in "Proc. Intl. Conf. on Scientific & Engineering Computation (ICSEC)", (2004), 4 page(s) . BibTeX |
| 69. | S. Wagner, T. Grasser, S. Selberherr: "Mixed-Mode Device and Circuit Simulation"; Talk: International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES), Szczecin; (invited) 2004-06-24 - 2004-06-26; in "Proceedings of the 11th International Conference on Mixed Design of Integrated Circuits and Systems MIXDES", (2004), ISBN: 83-919289-7-7, 36 - 41. BibTeX |
| 68. | A. Sheikholeslami, C. Heitzinger, T. Grasser, S. Selberherr: "Three-Dimensional Topography Simulation for Deposition and Etching Processes Using a Level Set Method"; Talk: International Conference on Microelectronics (MIEL), Nis; 2004-05-16 - 2004-05-19; in "2004 International Conference on Microelectronics", (2004), ISBN: 0-7803-8166-1, 241 - 244. BibTeX |
| 67. | R. Entner, A. Gehring, T. Grasser, S. Selberherr: "A Comparison of Quantum Correction Models for the Three-Dimensional Simulation of FinFET Structures"; Poster: International Spring Seminar on Electronics Technology (ISSE), Sofia; 2004-05-13 - 2004-05-16; in "Proceedings IEEE International Spring Seminar on Electronics Technology 27th ISSE 2004", (2004), 1, ISBN: 0-7803-8422-9, 114 - 117. BibTeX |
| 66. | R. Kosik, T. Grasser, R. Entner, K. Dragosits: "On the Highest Order Moment Closure Problem"; Poster: International Spring Seminar on Electronics Technology (ISSE), Sofia; 2004-05-13 - 2004-05-16; in "Proceedings IEEE International Spring Seminar on Electronics Technology 27th ISSE 2004", (2004), 1, ISBN: 0-7803-8422-9, 118 - 120. BibTeX |
| 65. | S. Holzer, A. Sheikholeslami, S. Wagner, C. Heitzinger, T. Grasser, S. Selberherr: "Optimization and Inverse Modeling for TCAD Applications"; Talk: Symposium on Nano Device Technology (SNDT), Hsinchu; 2004-05-12 - 2004-05-13; in "Proceedings of the Symposium on Nano Device Technology", (2004), 113 - 116. BibTeX |
| 64. | S. Wagner, V. Palankovski, R. Quay, T. Grasser, S. Selberherr: "Numerical Simulation of High-Speed High-Breakdown Indium Phosphide HBTs"; Talk: International Workshop on the Physics of Semiconductor Devices (IWPSD), Madras; 2003-12-16 - 2003-12-20; in "Proceedings of the Twelfth International Workshop on the Physics of Semiconductor Devices", (2003), ISBN: 81-7319-567-6, 836 - 838. BibTeX |
| 63. | T. Grasser: "Closure Relations for Macroscopic Transport Models"; Talk: International Semiconductor Device Research Symposium (ISDRS), Washington; (invited) 2003-12-10 - 2003-12-12; in "2003 International Semiconductor Device Research Symposium", (2003), ISBN: 0-7803-8139-4, 504 - 505. BibTeX |
| 62. | S. Wagner, T. Grasser, C. Fischer, S. Selberherr: "A Generally Applicable Approach for Advanced Equation Assembling"; Talk: International Conference on Software Engineering and Applications (SEA), Marina del Rey; 2003-11-03 - 2003-11-05; in "Proceedings of the 7th IASTED International Conference on Software Engineering and Applications (SEA)", (2003), ISBN: 088-9863-94-6, 494 - 499. BibTeX |
| 61. | S. Wagner, T. Grasser, C. Fischer, S. Selberherr: "Advanced Equation Assembling Techniques for Numerical Simulators"; Talk: European Simulation and Modeling Conference (ESMC), Naples; 2003-10-27 - 2003-10-29; in "The 2003 European Simulation and Modelling Conference", (2003), ISBN: 90-77381-04-x, 390 - 394. BibTeX |
| 60. | S. Wagner, T. Grasser, C. Fischer, S. Selberherr: "A Simulator Module for Advanced Equation Assembling"; Talk: European Simulation Symposium (ESS), Delft; 2003-10-26 - 2003-10-29; in "Simulation in Industry, 15th European Simulation Symposium", (2003), ISBN: 3-936150-28-1, 55 - 64. BibTeX |
| 59. | J. Cervenka, A. Hössinger, R. Minixhofer, T. Grasser, S. Selberherr: "Dreidimensionale Modellierung Elektronischer Bauteile"; Poster: Informationstagung Mikroelektronik (ME), Wien; 2003-10-01 - 2003-10-02; in "Beiträge der Informationstagung Mikroelektronik 2003", (2003), ISBN: 3-85133-030-7, 377 - 382. BibTeX |
| 58. | S. Wagner, V. Palankovski, G. Röhrer, T. Grasser, S. Selberherr: "Numerische Berechnung von Silizium-Germanium Heterostruktur-Bipolartransistoren"; Poster: Informationstagung Mikroelektronik (ME), Wien; 2003-10-01 - 2003-10-02; in "Beiträge der Informationstagung Mikroelektronik 2003", (2003), ISBN: 3-85133-030-7, 383 - 388. BibTeX |
| 57. | S. Holzer, R. Minixhofer, C. Heitzinger, J. Fellner, T. Grasser, S. Selberherr: "Extraction of Material Parameters Based on Inverse Modeling of Three-Dimensional Interconnect Structures"; Talk: Workshop on Thermal Investigations of ICs and Systems (THERMINIC), Aix-en-Provence; 2003-09-24 - 2003-09-26; in "International Workshop on Thermal Investigations of ICs and Systems", (2003), ISBN: 2-848-130202, 263 - 268. BibTeX |
| 56. | T. Ayalew, J.M. Park, A. Gehring, T. Grasser, S. Selberherr: "Silicon Carbide Accumulation-Mode Laterally Diffused MOSFET"; Poster: European Solid-State Device Research Conference (ESSDERC), Estoril; 2003-09-16 - 2003-09-18; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2003), ISBN: 0-7803-7999-3, 581 - 584. BibTeX |
| 55. | R. Minixhofer, S. Holzer, C. Heitzinger, J. Fellner, T. Grasser, S. Selberherr: "Optimization of Electrothermal Material Parameters Using Inverse Modeling"; Talk: European Solid-State Device Research Conference (ESSDERC), Estoril; 2003-09-16 - 2003-09-18; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2003), ISBN: 0-7803-7999-3, 363 - 366. BibTeX |
| 54. | T. Ayalew, J.M. Park, A. Gehring, T. Grasser, S. Selberherr: "Modeling and Simulation of SiC MOSFETs"; Talk: International Conference on Applied Modelling and Simulation, Marbella; 2003-09-03 - 2003-09-05; in "Proceedings of the Twelfth IASTED International Conference on Applied Simulation and Modelling", (2003), ISBN: 0-88986-384-9, 552 - 556. BibTeX |
| 53. | T. Grasser, H. Kosina, S. Selberherr: "Reformulation of Macroscopic Transport Models Based on the Moments of the Scattering Integral"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 2003-09-03 - 2003-09-05; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2003), ISBN: 0-7803-7826-1, 63 - 66 doi:10.1109/SISPAD.2003.1233638. BibTeX |
| 52. | J.M. Park, T. Grasser, S. Selberherr: "High-Voltage Super-Junction SOI-LDMOSFETs with Reduced Drift Length"; Talk: Meeting of the Electrochemical Society (ECS), Paris; 2003-04-26 - 2003-05-02; in "203rd ECS Meeting", (2003), ISBN: 1-56677-347-4, 273 - 282. BibTeX |
| 51. | A. Gehring, H. Kosina, T. Grasser, S. Selberherr: "Consistent Comparison of Tunneling Models for Device Simulation"; Poster: Workshop on Ultimate Integration of Silicon (ULIS), Udine; 2003-03-20 - 2003-03-21; in "4th European Workshop on Ultimate Integration of Silicon", (2003), ISBN: 88-900984-0-6, 131 - 134. BibTeX |
| 50. | T. Grasser, H. Kosina, S. Selberherr: "Rigorous Modeling of Mobilities and Relaxation Times Using Six Moments of the Distribution Function"; Talk: Workshop on Ultimate Integration of Silicon (ULIS), Udine; 2003-03-20 - 2003-03-21; in "4th European Workshop on Ultimate Integration of Silicon", (2003), ISBN: 88-900984-0-6, 105 - 108. BibTeX |
| 49. | A. Gehring, T. Grasser, H. Kosina, S. Selberherr: "An Energy Transport Gate Current Model Based on a Non-Maxwellian Energy Distribution"; Talk: International Conference on Modeling and Simulation of Microsystems (MSM), San Francisco; 2003-02-23 - 2003-02-27; in "Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show", (2003), ISBN: 0-9728422-1-7, 48 - 51. BibTeX |
| 48. | V. Palankovski, G. Röhrer, T. Grasser, S. Smirnov, H. Kosina, S. Selberherr: "Rigorous Modeling Approach to Numerical Simulation of SiGe-HBTs"; Poster: International SiGe Technology and Device Meeting (ISTDM), Nagoya; 2003-01-15 - 2003-01-17; in "First International SiGe Technology and Device Meeting", (2003), 97 - 98. BibTeX |
| 47. | S. Wagner, V. Palankovski, T. Grasser, G. Röhrer, S. Selberherr: "A Direct Extraction Feature for Scattering Parameters of SiGe-HBTs"; Talk: International SiGe Technology and Device Meeting (ISTDM), Nagoya; 2003-01-15 - 2003-01-17; in "First International SiGe Technology and Device Meeting", (2003), 83 - 84. BibTeX |
| 46. | S. Wagner, V. Palankovski, T. Grasser, R. Schultheis, S. Selberherr: "Small-Signal Analysis and Direct S-Parameter Extraction"; Talk: International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO), Manchester; 2002-11-18 - 2002-11-19; in "The 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications", (2002), ISBN: 0-7803-7530-0, 50 - 55 doi:10.1109/EDMO.2002.1174929. BibTeX |
| 45. | R. Klima, T. Grasser, S. Selberherr: "Controlling Scheme of the Device Simulator MINIMOS-NT"; Talk: European Simulation Symposium (ESS), Dresden; 2002-10-23 - 2002-10-26; in "Proceedings European Simulation Symposium", (2002), ISBN: 3-936150-22-2, 80 - 84. BibTeX |
| 44. | V. Palankovski, S. Wagner, T. Grasser, R. Schultheis, S. Selberherr: "Direct S-Parameter Extraction by Physical Two-Dimensional Device AC-Simulation"; Poster: International Symposium on Compound Semiconductors (ISCS), Lausanne; 2002-10-07 - 2002-10-10; in "Proceedings of the Intl. Symposium on Compound Semiconductors", (2002), ISBN: 0-7503-0942-3, 303 - 306. BibTeX |
| 43. | R. Klima, T. Grasser, S. Selberherr: "The Control System of the Device Simulator MINIMOS-NT"; Talk: International Conference on Nanoelectronics and Electromagnetic Compatibility, Skiathos; 2002-09-25 - 2002-09-28; in "Advances in Simulation, Systems Theory, and Systems Engineering", (2002), ISBN: 960-8052-70-x, 281 - 284. BibTeX |
| 42. | A. Gehring, T. Grasser, H. Kosina, S. Selberherr: "A New Gate Current Model Accounting for a Non-Maxwellian Electron Energy Distribution Function"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 2002-09-04 - 2002-09-06; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5, 235 - 238 doi:10.1109/SISPAD.2002.1034560. BibTeX |
| 41. | M. Gritsch, H. Kosina, T. Grasser, S. Selberherr: "Simulation of a "Well Tempered" SOI MOSFET using an Enhanced Hydrodynamic Transport Model"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 2002-09-04 - 2002-09-06; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5, 195 - 198 doi:10.1109/SISPAD.2002.1034550. BibTeX |
| 40. | T. Grasser, A. Gehring, S. Selberherr: "Macroscopic Transport Models for Microelectronics Devices"; Talk: World Multiconference on Systemics, Cybernetics and Informatics (SCI), Orlando; (invited) 2002-07-14 - 2002-07-18; in "The 6th World Multiconference on Systemics, Cybernetics and Informatics", (2002), ISBN: 980-07-8150-1, 223 - 228. BibTeX |
| 39. | A. Gehring, T. Grasser, S. Selberherr: "Non-Parabolicity and Non-Maxwellian Effects on Gate Oxide Tunneling"; Talk: International Conference on Modeling and Simulation of Microsystems (MSM), San Juan; 2002-04-21 - 2002-04-25; in "Technical Proceedings of the Fifth International Conference on Modeling and Simulation of Microsystems", (2002), ISBN: 0-9708275-7-1, 560 - 563. BibTeX |
| 38. | T. Grasser, H. Kosina, C. Heitzinger, S. Selberherr: "An Impact Ionization Model Including an Explicit Cold Carrier Population"; Talk: International Conference on Modeling and Simulation of Microsystems (MSM), San Juan; 2002-04-21 - 2002-04-25; in "Technical Proceedings of the Fifth International Conference on Modeling and Simulation of Microsystems", (2002), ISBN: 0-9708275-7-1, 572 - 575. BibTeX |
| 37. | M. Gritsch, H. Kosina, T. Grasser, S. Selberherr, T. Linton, S. Singh, S. Yu, M. Giles: "The Failure of the Hydrodynamic Transport Model for Simulation of Partially Depleted SOI MOSFETs and its Revision"; Talk: International Conference on Modeling and Simulation of Microsystems (MSM), San Juan; 2002-04-21 - 2002-04-25; in "Technical Proceedings of the Fifth International Conference on Modeling and Simulation of Microsystems", (2002), ISBN: 0-9708275-7-1, 544 - 547. BibTeX |
| 36. | T. Grasser, A. Gehring, S. Selberherr: "Recent Advances in Transport Modeling for Miniaturized CMOS Devices"; Talk: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Aruba; (invited) 2002-04-17 - 2002-04-19; in "Proceedings of the ICCDCS 2002", (2002), D027, ISBN: 0-7803-7380-4, 1 - 8. BibTeX |
| 35. | T. Grasser, S. Selberherr: "Limitations of Hydrodynamic and Energy-Transport Models"; Talk: V. Kumar, P.K. Basu (ed); International Workshop on Processes of Semiconductor Devices, Delhi; (invited) 2001-12-11 - 2001-12-15; in "Physics of Semiconductor Devices", (2001), ISBN: 81-7764-223-5, 584 - 591. BibTeX |
| 34. | M. Gritsch, H. Kosina, T. Grasser, S. Selberherr: "Simulation of Partially Depleted SOI MOSFETs using an Improved Hydrodynamic Transport Model"; Talk: V. Kumar, P.K. Basu (ed); International Workshop on Processes of Semiconductor Devices, Delhi; 2001-12-11 - 2001-12-15; in "Physics of Semiconductor Devices", (2001), ISBN: 81-7764-223-5, 664 - 667. BibTeX |
| 33. | A. Gehring, T. Grasser, S. Selberherr: "Design Optimization of Multi-Barrier Tunneling Devices Using the Transfer Matrix Method"; Poster: International Semiconductor Device Research Symposium (ISDRS), Washington; 2001-12-05 - 2001-12-07; in "2001 International Semiconductor Device Research Symposium", (2001), 260 - 263. BibTeX |
| 32. | J.M. Park, T. Grasser, H. Kosina, S. Selberherr: "Numerical Study of Partial-SOI LDMOSFET Power Devices"; Poster: International Semiconductor Device Research Symposium (ISDRS), Washington; 2001-12-05 - 2001-12-07; in "2001 International Semiconductor Device Research Symposium", (2001), 114 - 117. BibTeX |
| 31. | V. Palankovski, G. Röhrer, E. Wachmann, J. Kraft, B. Löffler, J. Cervenka, R. Quay, T. Grasser, S. Selberherr: "Optimization of High-Speed SiGe HBTs"; Talk: International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO), Wien; 2001-11-15 - 2001-11-16; in "Proceedings Intl. Symposium on Electron Devices for Microwave and Optoelectronic Applications", (2001), ISBN: 0-7803-7049-x, 187 - 191 doi:10.1109/EDMO.2001.974305. BibTeX |
| 30. | V. Palankovski, N. Belova, T. Grasser, H. Puchner, S. Aronowitz, S. Selberherr: "Reliable Prediction of Deep Sub-Quartermicron CMOS Technology Performance"; Talk: IEEE Conference on Nanotechnology (NANO), Maui; 2001-10-28 - 2001-10-30; in "Proceedings of the IEEE Conference on Nanotechnology (NANO)", (2001), ISBN: 0-7803-7215-8, 201 - 206 doi:10.1109/NANO.2001.966419. BibTeX |
| 29. | H. Kosina, M. Gritsch, T. Grasser, T. Linton, S. Yu, M. Giles, S. Selberherr: "An Improved Energy Transport Model Suitable for Simulation of Partially Depleted SOI MOSFETs"; Poster: International Workshop on Computational Electronics (IWCE), Urbana-Champaign, IL, USA; 2001-09-15 - 2001-09-18; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2001), 67. BibTeX |
| 28. | T. Grasser, H. Kosina, M. Gritsch, S. Selberherr, H. Puchner, S. Aronowitz: "Accurate Simulation of Substrate Currents by Accounting for the Hot Electron Tail Population"; Talk: European Solid-State Device Research Conference (ESSDERC), Nürnberg; 2001-09-11 - 2001-09-13; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2001), ISBN: 2-914601-01-8, 215 - 218. BibTeX |
| 27. | A. Gehring, C. Heitzinger, T. Grasser, S. Selberherr: "TCAD Analysis of Gain Cell Retention Time for SRAM Applications"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 2001-09-05 - 2001-09-07; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6, 416 - 419 doi:10.1007/978-3-7091-6244-6_96. BibTeX |
| 26. | T. Grasser, H. Kosina, S. Selberherr: "An Impact Ionization Model Including Non-Maxwellian and Non-Parabolicity Effects"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 2001-09-05 - 2001-09-07; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6, 46 - 49 doi:10.1007/978-3-7091-6244-6_10. BibTeX |
| 25. | T. Grasser, H. Kosina, S. Selberherr: "Investigation of Spurious Velocity Overshoot Using Monte Carlo Data"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 2001-09-05 - 2001-09-07; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6, 54 - 57 doi:10.1007/978-3-7091-6244-6_12. BibTeX |
| 24. | M. Nedjalkov, T. Grasser, H. Kosina, S. Selberherr: "Boundary Condition Models for Terminal Current Fluctuations"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 2001-09-05 - 2001-09-07; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6, 152 - 155 doi:10.1007/978-3-7091-6244-6_34. BibTeX |
| 23. | V. Palankovski, N. Belova, T. Grasser, H. Puchner, S. Aronowitz, S. Selberherr: "A Methodology for Deep Sub-Quartermicron CMOS Technology Characterization"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 2001-09-05 - 2001-09-07; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6, 428 - 431 doi:10.1007/978-3-7091-6244-6_99. BibTeX |
| 22. | R. Klima, T. Grasser, S. Selberherr: "Controlling TCAD Applications with an Object-Oriented Dynamic Database"; Talk: European Simulation Multiconference (ESM), Prag; 2001-06-06 - 2001-06-09; in "Proceedings European Simulation Multiconference ESM 2001", (2001), ISBN: 1-56555-225-3, 161 - 165. BibTeX |
| 21. | A. Wolf, T. Grasser, S. Selberherr: "Automatic Binding of SPICE Models to the Device/Circuit Simulator MINIMOS-NT"; Talk: European Simulation Multiconference (ESM), Prag; 2001-06-06 - 2001-06-09; in "Proceedings European Simulation Multiconference ESM 2001", (2001), ISBN: 1-56555-225-3, 314 - 318. BibTeX |
| 20. | T. Grasser, S. Selberherr: "Technology CAD: Device Simulation and Characterization"; Talk: Ultra Shallow Junctions Conference, Napa; (invited) 2001-04-22 - 2001-04-26; in "Sixth International Workshop on the Fabrication, Characterization, and Modeling of Ultra Shallow Doping Profiles in Semiconductors", (2001), 4 - 11. BibTeX |
| 19. | T. Grasser: "Simulation of Semiconductor Devices and Circuits at High Frequencies"; Talk: GMe Forum 2001, Wien; (invited) 2001-04-05 - 2001-04-06; in "Proceedings of the GMe Forum", (2001), 91 - 96. BibTeX |
| 18. | M. Gritsch, H. Kosina, T. Grasser, S. Selberherr: "A Simulation Study of Partially Depleted SOI MOSFETs"; Talk: Symposium on Silicon-on-Insulator Technology and Devices, Washington; 2001-03-25 - 2001-03-29; in "Proceedings Symp. on Silicon-on-Insulator Technology and Devices", (2001), ISBN: 1-56677-309-1, 181 - 186. BibTeX |
| 17. | T. Grasser, H. Kosina, M. Gritsch, S. Selberherr: "A Physics-Based Impact Ionization Model Using Six Moments of the Boltzmann Transport Equation"; Talk: International Conference on Modeling and Simulation of Microsystems (MSM), Hilton Head Island; 2001-03-19 - 2001-03-21; in "Technical Proceedings of the Fourth International Conference on Modeling and Simulation of Microsystems", (2001), ISBN: 0-9708275-0-4, 474 - 477. BibTeX |
| 16. | T. Grasser, H. Kosina, S. Selberherr: "Hydrodynamic and Energy-Transport Models for Semiconductor Device Simulation"; Talk: International Conference on the Experience of Designing and Application of CAD Systems in Microelectronics, Lviv-Slavsko; (invited) 2001-02-12 - 2001-02-17; in "The Experience of Designing and Application of CAD Systems in Microelectronics", (2001), ISBN: 966-553-079-8, 19 - 30. BibTeX |
| 15. | R. Klima, T. Grasser, T. Binder, S. Selberherr: "Controlling TCAD Applications with a Dynamic Database"; Talk: International Conference on Software Engineering and Applications (SEA), Las Vegas; 2000-11-06 - 2000-11-09; in "Proceedings of the IASTED Intl. Conf. on Software Engineering and Applications", (2000), ISBN: 0-88986-306-7, 103 - 112. BibTeX |
| 14. | T. Grasser, S. Selberherr: "Electro-Thermal Effects in Mixed-Mode Device Simulation"; Talk: International Semiconductor Conference (CAS), Sinaia; (invited) 2000-10-10 - 2000-10-14; in "Proceedings CAS 2000 Conference", (2000), ISBN: 0-7803-5885-6, 43 - 52. BibTeX |
| 13. | T. Grasser, R. Quay, V. Palankovski, S. Selberherr: "A Global Self-Heating Model for Device Simulation"; Talk: European Solid-State Device Research Conference (ESSDERC), Cork; 2000-09-11 - 2000-09-13; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2000), ISBN: 2-86332-248-6, 324 - 327 doi:10.1109/ESSDERC.2000.194780. BibTeX |
| 12. | V. Palankovski, T. Grasser, M. Knaipp, S. Selberherr: "Simulation of Polysilicon Emitter Bipolar Transistors"; Poster: European Solid-State Device Research Conference (ESSDERC), Cork; 2000-09-11 - 2000-09-13; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2000), ISBN: 2-86332-248-6, 608 - 611 doi:10.1109/ESSDERC.2000.194851. BibTeX |
| 11. | R. Quay, H. Massler, W. Kellner, T. Grasser, V. Palankovski, S. Selberherr: "Simulation of Gallium-Arsenide Based High Electron Mobility Transistors"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Seattle, WA, USA; 2000-09-06 - 2000-09-08; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2000), ISBN: 0-7803-6279-9, 74 - 77 doi:10.1109/SISPAD.2000.871210. BibTeX |
| 10. | T. Grasser, S. Selberherr: "Mixed-Mode Device Simulation"; Talk: International Conference on Microelectronics (MIEL), Nis; (invited) 2000-05-14 - 2000-05-17; in "22nd International Conference on Microelectronics", (2000), ISBN: 0-7803-5235-1, 35 - 42. BibTeX |
| 9. | R. Quay, R. Reuter, T. Grasser, S. Selberherr: "Thermal Simulations of III/V HEMTs"; Talk: International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO), London; 1999-11-22 - 1999-11-23; in "Proceedings High Performance Electron Devices for Microwave and Optoelectronic Applications", (1999), ISBN: 0-7803-5298-x, 87 - 92. BibTeX |
| 8. | T. Grasser, H. Kosina, S. Selberherr: "Consistent Comparison of Drift-Diffusion and Hydro-Dynamic Device Simulations"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kyoto, Japan; 1999-09-06 - 1999-09-08; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1999), ISBN: 4-930813-98-0, 151 - 154 doi:10.1109/SISPAD.1999.799283. BibTeX |
| 7. | T. Grasser, S. Selberherr, K. Tsueno, H. Masuda: "Mobility Parameter Tuning for Device Simulation"; Talk: European Solid-State Device Research Conference (ESSDERC), Bordeaux; 1998-09-07 - 1998-09-09; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1998), ISBN: 2-86332-234-6, 336 - 339. BibTeX |
| 6. | T. Grasser, V. Palankovski, G. Schrom, S. Selberherr: "Hydrodynamic Mixed-Mode Simulation"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 1998-09-02 - 1998-09-04; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4, 247 - 250 doi:10.1007/978-3-7091-6827-1_62. BibTeX |
| 5. | T. Grasser, R. Strasser, M. Knaipp, K. Tsueno, H. Masuda, S. Selberherr: "Device Simulator Calibration for Quartermicron CMOS Devices"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 1998-09-02 - 1998-09-04; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4, 93 - 96 doi:10.1007/978-3-7091-6827-1_26. BibTeX |
| 4. | G. Kaiblinger-Grujin, T. Grasser, S. Selberherr: "A Physically-Based Electron Mobility Model for Silicon Device Simulation"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 1998-09-02 - 1998-09-04; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4, 312 - 315 doi:10.1007/978-3-7091-6827-1_78. BibTeX |
| 3. | T. Grasser, R. Strasser, M. Knaipp, H. Masuda, S. Selberherr: "Calibration of a Mobility Model for Quartermicron CMOS Devices"; Poster: European Simulation Multiconference (ESM), Manchester; 1998-06-16 - 1998-06-19; in "Proceedings European Simulation Multiconference", (1998), ISBN: 1-56555-148-6, 75 - 77. BibTeX |
| 2. | V. Palankovski, T. Grasser, S. Selberherr: "SiGe HBT in Mixed-Mode Device and Circuit Simulation"; Talk: Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Zeuthen; 1998-05-24 - 1998-05-27; in "Proceedings Workshop on Compound Semiconductor Devices and Integrated Circuits", (1998), 145 - 156. BibTeX |
| 1. | M. Knaipp, T. Grasser, S. Selberherr: "A Physically Based Substrate Current Simulation"; Poster: European Solid-State Device Research Conference (ESSDERC), Stuttgart; 1997-09-22 - 1997-09-24; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1997), ISBN: 2-86332-221-4, 196 - 199. BibTeX |
| 50. | T. Grasser: "CaF2 Insulators for Ultrascaled 2D Field Effect Transistors"; Talk: IEEE EDS Distinguished Lecture at RWTH Aachen, Aachen, Germany; (invited) 2019-11-26. BibTeX |
| 49. | T. Grasser: "CaF2 Insulators for Ultrascaled 2D Field Effect Transistors"; Talk: Workshop "Wafer-scale Integration of 2D materials", Aachen, Germany; (invited) 2019-11-13. BibTeX |
| 48. | Yu. Illarionov, A. Banshchikov, D.K Polyushkin, S. Wachter, M. I. Vexler, N. S. Sokolov, T. Müller, T. Grasser: "Reliability and Thermal Stability of MoS2 FETs with Ultrathin CaF2 Insulator"; Talk: IEEE Nanotechnology Materials and Devices Conference (NMDC), Stockholm, Sweden; (invited) 2019-10-27 - 2019-10-30; . BibTeX |
| 47. | Yu. Illarionov, A. Banshchikov, D.K Polyushkin, S. Wachter, M. Vexler, N. S. Sokolov, T. Müller, T. Grasser: "CaF2 Insulators for Ultrascaled 2D Field Effect Transistors"; Talk: Graphene Week, Helsinki, Finland; (invited) 2019-09-23 - 2019-09-27; . BibTeX |
| 46. | T. Grasser: "Multiscale Reliability Modeling"; Talk: IEEE EDS Distinguished Lecture at the SINANO Sommer School 2018, Tarragona, Spain; (invited) 2018-09-25. BibTeX |
| 45. | Yu. Illarionov, B. Stampfer, F. Zhang, T. Knobloch, P. Wu, M. Waltl, A. Grill, J. Appenzeller, T. Grasser: "Characterization of Single Defects: from Si to MoS2 FETs"; Poster: International Conference on Physics of 2D Crystals (ICP2C3), Valetta, Malta; 2018-05-29 - 2018-06-02; . BibTeX |
| 44. | T. Grasser: "Defects in 3D and 2D Field Effect Transistors: Characterization and Modeling"; Talk: IEEE EDS Distinguished Lecture, Aachen, Germany; (invited) 2017-11-23. BibTeX |
| 43. | C. Ostermaier, P. Lagger, M. Reiner, A. Grill, R. Stradiotto, G. Pobegen, T. Grasser, R. Pietschnig, D. Pogany: "Review of bias-temperature instabilities at the III-N/dielectric interface"; Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Bordequx, Frankreich; 2017-09-25 - 2017-09-28; . BibTeX |
| 42. | Yu. Illarionov, M. Waltl, T. Knobloch, G. Rzepa, T. Grasser: "Reliability Perspective of 2D Electronics"; Talk: International Conference on Physics of 2D Crystals (ICP2C2), Ha Long, Vietnam; 2017-04-25 - 2017-04-30; . BibTeX |
| 41. | T. Grasser: "Charge Trapping and Time-dependent Variability in Low-Voltage MOS Transistors"; Talk: Short Course at IEEE EDS Electron Devices Technology and Manufacturing Conference, Toyama, Japan; (invited) 2017-02-28. BibTeX |
| 40. | T. Grasser: "Charge Trapping and Time-dependent Variability in CMOS Transistors"; Talk: IEEE EDS Distinguished Lecture, Stuttgart,Germany; (invited) 2017-01-24. BibTeX |
| 39. | C. Ostermaier, P. Lagger, G. Prechtl, A. Grill, T. Grasser, D. Pogany: "The role of electron transport in the charge trapping at the III-N/dielectric interface in AlGaN/GaN MIS-HEMT structures"; Talk: Semiconductor Interface Specialists Conference, Arlington, VA, USA; 2015-12-02 - 2015-12-05; . BibTeX |
| 38. | T. Grasser: "Recent Progress in Understanding the Bias Temperature Instability: from Single Traps to Distributions"; Talk: IEEE EDS Distinguished Lecture, Hiroshima, Japan; (invited) 2015-08-26. BibTeX |
| 37. | T. Grasser: "Advanced Modeling and Characterization of Bias Temperature Instabilities and Hot Carrier Degradation"; Talk: Kyoto Institute of Technology, Kyoto, Japan; (invited) 2015-08-24. BibTeX |
| 36. | T. Grasser: "Advanced Modeling and Characterization of Bias Temperature Instabilities and Hot Carrier Degradation"; Talk: D2T Symposium, Tokyo, Japan; (invited) 2015-08-21. BibTeX |
| 35. | T. Grasser: "Oxide Defects in MOS Transistors: Characterization and Modeling"; Talk: Workshop on Dielectrics in Microelectronics (WODIM), Kinsale, Ireland; (invited) 2015-06-09 - 2015-06-11; . BibTeX |
| 34. | T. Grasser: "Charge Transfer of Single Holes in Nanoscale MOS Transistors: Linking DFT to Experiment"; Talk: CECAM-Workshop on Structural and Electronic Phenomena at Interfaces of Nanoscale Oxides, Lausanne, Switzerland; (invited) 2015-04-08 - 2015-04-10; . BibTeX |
| 33. | K. Rupp, A. Jüngel, T. Grasser: "A Performance Comparison of Algebraic Multigrid Preconditioners on GPUs and MIC"; Talk: Copper Mountain Conference on Multigrid Methods, Copper Mountain, CO, USA; 2015-03-22 - 2015-03-27; . BibTeX |
| 32. | K. Rupp, M. Bina, A. Morhammer, T. Grasser, A. Jüngel: "ViennaSHE: A Semiconductor Device Simulator Based on the Spherical Harmonics Expansion Method"; Talk: Workshop on Applied Mathematics and Simulation for Semiconductors (AMaSIS), Berlin, Germany; (invited) 2015-03-11 - 2015-03-13; . BibTeX |
| 31. | T. Grasser: "Oxide Defects in MOS Transistors: Characterization and Modeling"; Talk: IEEE EDS Distinguished Lecture, Aranjuez, Spain; (invited) 2015-02-11. BibTeX |
| 30. | T. Grasser: "Characterization and Modeling of Charge Trapping and Hot Carrier Degradation"; Talk: IEEE EDS Distinguished Lecture, Agrate Brianza, Italy; (invited) 2014-12-11. BibTeX |
| 29. | T. Grasser: "Characterization and Modeling of Charge Trapping in CMOS Transistors"; Talk: International Workshop on Characterization and Modeling of Memory Devices, Agrate Brianza, Italy; (invited) 2014-10-02 - 2014-10-03; . BibTeX |
| 28. | T. Grasser: "Bias Temperature Instability in CMOS Nanodevices"; Talk: SINANO Summer School, Bertinoro, Italy; (invited) 2014-08-25 - 2014-08-29; . BibTeX |
| 27. | T. Grasser: "Aging in CMOS Devices: From Microscopic Physics to Compact Models"; Talk: The 2012 Forum on Specification & Design Languages, Vienna, Austria; (invited) 2012-09-18 - 2012-09-20; . BibTeX |
| 26. | F. Schanovsky, T. Grasser: "Bias Temperature Instabilities in highly-scaled MOSFETs"; Talk: 2012 CMOS Emerging Technologies, Vancouver, BC Canada; (invited) 2012-07-18 - 2012-07-21; . BibTeX |
| 25. | T. Grasser: "Modeling of Device Reliability"; Talk: Tutorial at 37th European Solid-State Devices Conference, Helsinki, Finland; 2011-09-12 - 2011-09-16; . BibTeX |
| 24. | T. Grasser: "Oxide Defects: From Microscopic Physics to Compact Models"; Talk: SISPAD Workshop, Osaka, JAPAN; 2011-09-08 - 2011-09-10; . BibTeX |
| 23. | T. Grasser: "Cause, Detection, and Impact of Charge Trapping on Aging"; Talk: VLSI Symposium Short Course, Kyoto, Japan; 2011-06-14 - 2011-06-18; . BibTeX |
| 22. | J. Franco, B. Kaczer, J. Mitard, G. Eneman, Ph. J. Roussel, F. Crupi, T. Grasser, L. Witters, T. Y. Hoffmann, G. Groeseneken: "Implications of Channel Hot Carrier Degradation in Si0.45Ge0.55 pMOSFETs"; Poster: Semiconductor Interface Specialists Conference (SISC), San Diego; 2010-12-02 - 2010-12-04; . BibTeX |
| 21. | M. Toledano-Luque, B. Kaczer, Ph. J. Roussel, R. Degraeve, J. Franco, T. Kauerauf, T. Grasser, G. Groeseneken: "Depth Localization of Trapped Holes in SiON after Positive and Negative Gate Stress"; Poster: Semiconductor Interface Specialists Conference (SISC), San Diego; 2010-12-02 - 2010-12-04; . BibTeX |
| 20. | T. Grasser, H. Reisinger, P.-J. Wagner, W. Gös, F. Schanovsky, B. Kaczer: "The Time Dependent Defect Spectroscopy (TDDS) for the Characterization of the Bias Temperature Instability"; Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Gaeta; (invited) 2010-10-11. BibTeX |
| 19. | T. Grasser: "Recent Developments in Device Reliability Modeling"; Talk: MOS-AK ESSDERC Companion Workshop, Seville; (invited) 2010-09-17. BibTeX |
| 18. | T. Grasser: "Statistical Reliability in Nanoscale Devices"; Talk: SISPAD Workshop, Bologna; (invited) 2010-09-08. BibTeX |
| 17. | T. Grasser: "Transport Modeling in Modern Semiconductor Devices"; Talk: CoMoN Workshop 2010, Tarragona; (invited) 2010-06-30 - 2010-07-01; . BibTeX |
| 16. | T. Grasser: "Characterization and Modeling of the Negative Bias Temperature Instability"; Talk: VDE/VDI GMM Workshop "Stand und Perspektiven von SOI-Technologien und Anwendungen", Duisburg; (invited) 2010-03-18 - 2010-03-19; . BibTeX |
| 15. | J. Franco, B. Kaczer, A. Stesmans, V. Afanas´Ev, K. Martens, M. Aoulaiche, T. Grasser, J. Mitard, G. Groeseneken: "Impact of Si-Passivation Thickness and Processing on NBTI Reliability of Ge and SiGe pMOSFETs"; Talk: 40th Semiconductor Interface Specialists Conference (SISC), Washington; 2009-12-03 - 2009-12-05; . BibTeX |
| 14. | T. Grasser: "Physical Mechanisms and Modeling of the Bias Temperature Instability"; Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Arcachon; 2009-10-05 - 2009-10-09; . BibTeX |
| 13. | T. Grasser: "Understanding Negative Bias Temperature Instability in the Context of Hole Trapping"; Talk: International Conference on Insulating Films on Semiconductors (INFOS), Cambridge; (invited) 2009-06-29 - 2009-07-01; . BibTeX |
| 12. | T. Aichinger, M. Nelhiebel, T. Grasser: "On the Temperature Dependence of NBTI Recovery"; Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Maastricht; 2008-09-29 - 2008-10-02; . BibTeX |
| 11. | T. Grasser: "Device Simulation Based on the Statistical Moments of the Boltzmann Transport Equation"; Talk: 3rd SINANO Device Modeling Summer School, Bertinoro, Italy; 2008-09-01 - 2008-09-05; . BibTeX |
| 10. | K. Martens, B. Kaczer, T. Grasser, B. De Jaeger, M. Meuris, G. Groeseneken, H.E. Maes: "Charge Pumping Charcaterization of Germanium MOSFETs"; Talk: Semiconductor Interface Specialists Conference (SISC), Arlington; 2007-12-06 - 2007-12-08; . BibTeX |
| 9. | T. Grasser, M. Vasicek, M. Wagner: "Higher-Order Moment Models for Engineering Applications"; Talk: Equadiff, Wien; 2007-08-05 - 2007-08-11; . BibTeX |
| 8. | T. Grasser: "Mixed Mode Device/Circuit Simulation"; Talk: MOS-AK ESSDERC Companion Workshop, Grenoble; (invited) 2005-09-16. BibTeX |
| 7. | S. Holzer, Ch. Hollauer, H. Ceric, S. Wagner, E. Langer, T. Grasser, S. Selberherr: "Transient Electro-Thermal Investigations of Interconnect Structures Exposed to Mechanical Stress"; Talk: SPIE VLSI Circuits and Systems, Sevilla, Spain; 2005-05-09 - 2005-05-11; . BibTeX |
| 6. | T. Grasser: "Higher-Order Moment Models for Engineering Applications"; Talk: Recent Advances in Modeling and Simulation of Semiconductor Devices and Circuits (SEMIC), Milano; (invited) 2005-02-17 - 2005-02-18; . BibTeX |
| 5. | A. Sheikholeslami, C. Heitzinger, E. Al-Ani, R. Heinzl, T. Grasser, S. Selberherr: "Three-Dimensional Surface Evolution Using a Level Set Method"; Poster: Iranian Ph.D. Students Seminar on Computer Science, Mathematics and Statistics (ICSMS), Paris; 2004-12-01. BibTeX |
| 4. | T. Ayalew, A. Gehring, T. Grasser, S. Selberherr: "Enhancement of Breakdown Voltage for Ni-SiC Schottky Diodes Utilizing Field Plate Edge Termination"; Poster: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Zürich; 2004-10-04 - 2004-10-08; . BibTeX |
| 3. | S. Wagner, T. Grasser, S. Selberherr: "Evaluation of Linear Solver Modules for Semiconductor Device Simulation"; Talk: International Conference on Mathematical Problems in Engineering and Aerospace Sciences (ICNPAA), Timisoara; (invited) 2004-06-02 - 2004-06-04; . BibTeX |
| 2. | T. Ayalew, A. Gehring, J.M. Park, T. Grasser, S. Selberherr: "Improving SiC Lateral DMOSFET Reliability under High Field Stress"; Poster: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Arcachon; 2003-10-07 - 2003-10-10; . BibTeX |
| 1. | T. Grasser: "Simulation of SOI-Devices"; Talk: VDE/VDI GMM Workshop "Stand und Perspektiven von SOI-Technologien und Anwendungen", München; (invited) 2001-05-17 - 2001-05-18; . BibTeX |
| 1. | T. Grasser: "Simulation of Miniaturized Semiconductor Devices"; TU Wien, Fakultät für Elektrotechnik und Informationstechnik, (2002), . BibTeX |
| 33. | J. Berens: "Carrier Mobility and Reliability of 4H-SiC Trench MOSFETs"; Reviewer: T. Grasser, J. Cooper, P. Pichler; E360, 2020, oral examination: 2020-12-22. BibTeX |
| 32. | K. Waschneck: "Modeling Bias Temperature Instability in Si and SiC MOSFETs using Activation Energy Maps"; Reviewer: T. Grasser, J. Schmitz, S. Reggiani; E360, 2020, oral examination: 2020-12-07. BibTeX |
| 31. | B. Stampfer: "Advanced Electrical Characterization of Charge Trapping in MOS Transistors"; Reviewer: T. Grasser, M. Nafria Maqueda, F. M. Puglisi; E360, 2020, oral examination: 2020-12-04. BibTeX |
| 30. | M. Jech: "The Physics of Non-Equilibrium Reliability Phenomena"; Reviewer: T. Grasser, M. Luisier, A. Bravaix; E360, 2020, oral examination: 2020-11-19. BibTeX |
| 29. | C Koller: "The Role of Carbon in Creating Insulating Behavior in GaN-on-Si Buffers: A Physical Model"; Reviewer: D. Pogany, T. Grasser, T. Uren; Institut für Festkörperelektronik, 2019, oral examination: 2019-01-22. BibTeX |
| 28. | G. Rescher: "Behavior of SiC-MOSFETs under Temperature and Voltage Stress"; Reviewer: T. Grasser, P. Hadley, J. Cooper; Institut für Mikroelektronik, 2018, oral examination: 2018-11-13. BibTeX |
| 27. | A. Grill: "Charge Trapping and Single-Defect Extraction in Gallium-Nitride Based MIS-HEMTs"; Reviewer: T. Grasser, G. Meneghesso, D. Pogany; Institut für Mikroelektronik, 2018, oral examination: 2018-10-22. BibTeX |
| 26. | G.A. Rott: "Negative Bias Temperature Instability and Hot-Carrier Degradation of 130 nm Technology Transistors including Recovery Effects"; Reviewer: T. Grasser, J. Schmitz, S. Reggiani; Institut für Mikroelektronik, 2018, oral examination: 2018-06-28. BibTeX |
| 25. | B. Ullmann: "Mixed Negative Bias Temperature Instability and Hot-Carrier Stress"; Reviewer: T. Grasser, J. Schmitz, S. Reggiani; Institut für Mikroelektronik, 2018, oral examination: 2018-06-28. BibTeX |
| 24. | G. Rzepa: "Efficient Physical Modeling of Bias Temperature Instability"; Reviewer: T. Grasser, L. Larcher, F. Crupi; Institut für Mikroelektronik, 2018, oral examination: 2018-06-27. BibTeX |
| 23. | Y. Wimmer: "Hydrogen Related Defects in Amorphous SiO2 and the Negative Bias Temperature Instability"; Reviewer: T. Grasser, M. Watkins, P. Mohn; Institut für Mikroelektronik, 2017, oral examination: 2017-11-27. BibTeX |
| 22. | R. Stradiotto: "Characterization of Electrically Active Defects at III-N/Dielectric Interfaces"; Reviewer: T. Grasser, G. Meneghesso; Institut für Mikroelektronik, 2016, oral examination: 2016-12-16. BibTeX |
| 21. | M. Waltl: "Characterization of Bias Temperature Instabilities in Modern Transistor Technologies"; Reviewer: T. Grasser, D. Schmitt-Landsiedel; Institut für Mikroelektronik, 2016, oral examination: 2016-09-09. BibTeX |
| 20. | R. Coppeta: "Dislocation Modeling in III-Nitrides"; Reviewer: T. Grasser, A. Köck; Institut für Mikroelektronik, 2015, oral examination: 2016-06-15. BibTeX |
| 19. | Yu. Illarionov: "Characterization and Modeling of Charged Defects in Silicon and 2D Field-Effect Transistors"; Reviewer: T. Grasser, L. Larcher; Institut für Mikroelektronik, 2015, oral examination: 2015-12-18. BibTeX |
| 18. | M. Bina: "Charge Transport Models for Reliability Engineering of Semiconductor Devices"; Reviewer: T. Grasser, C. Jungemann; Institut für Mikroelektronik, 2014, oral examination: 2014-03-25. BibTeX |
| 17. | G. Pobegen: "Degradation of Electrical Parameters of Power Semiconductor Devices - Process Influences and Modeling"; Reviewer: T. Grasser, P. Hadley; Institut für Mikroelektronik, 2013, oral examination: 2013-12-05. BibTeX |
| 16. | F. Schanovsky: "Atomistic Modeling in the Context of the Bias Temperature Instability"; Reviewer: T. Grasser, A. Schenk; Institut für Mikroelektronik, 2013, oral examination: 2013-03-19. BibTeX |
| 15. | I. Starkov: "Comprehensive Physical Modeling of Hot-Carrier Induced Degradation"; Reviewer: T. Grasser, M. Gröschl; Institut für Mikroelektronik, 2013, oral examination: 2013-01-14. BibTeX |
| 14. | Rui Huang: "Stress and Microstructural Evolution of Electroplated Copper Films"; Reviewer: T. Grasser, G. Dehm; Institut für Mikroelektronik, 2013, oral examination: 2013-01-09. BibTeX |
| 13. | O. Triebl: "Reliability Issues in High Voltage Semiconductor Devices"; Reviewer: T. Grasser, M. Gröschl; Institut für Mikroelektronik, 2012, oral examination: 2012-10-24. BibTeX |
| 12. | W. Gös: "Hole Trapping and the Negative Bias Temperature Instability"; Reviewer: T. Grasser, D. Süss; Institut für Mikroelektronik, 2011, oral examination: 2012-12-22. BibTeX |
| 11. | K. Rupp: "Deterministic Numerical Solution of the Boltzmann Transport Equation"; Reviewer: T. Grasser, C. Jungemann; E360, 2011, oral examination: 2011-12-19. BibTeX |
| 10. | Ph. Hehenberger: "Advanced Characterization of the Bias Temperature Instability"; Reviewer: T. Grasser, M. Gröschl; Institut für Mikroelektronik, 2011, oral examination: 2011-12-14. BibTeX |
| 9. | T. Aichinger: "On the Role of Hydrogen in Silicon Device Degradation and Metalization Processing"; Reviewer: T. Grasser, H. Hutter; Institut für Mikroelektronik, 2010, oral examination: 2010-09-01. BibTeX |
| 8. | M. Vasicek: "Advanced Macroscopic Transport Models"; Reviewer: T. Grasser, J. Summhammer; Institut für Mikroelektronik, 2009, oral examination: 2009-10-12. BibTeX |
| 7. | M. Wagner: "Simulation of Thermoelectric Devices"; Reviewer: T. Grasser, E. Bertagnolli; Institut für Mikroelektronik, 2007, oral examination: 2007-12-18. BibTeX |
| 6. | R. Entner: "Modeling and Simulation of Negative Bias Temperature Instability"; Reviewer: T. Grasser, G. Magerl; Institut für Mikroelektronik, 2007, oral examination: 2007-08-13. BibTeX |
| 5. | S. Holzer: "Optimization for Enhanced Thermal Technology CAD Purposes"; Reviewer: T. Grasser, H. Schichl; Institut für Mikroelektronik, 2007, oral examination: 2007-06-28. BibTeX |
| 4. | S. Wagner: "Small-Signal Device and Circuit Simulation"; Reviewer: T. Grasser, E. Bertagnolli; Institut für Mikroelektronik, 2005, oral examination: 2005-04-22. BibTeX |
| 3. | J. Cervenka: "Three-Dimensional Mesh Generation for Device and Process Simulation"; Reviewer: T. Grasser, H. Haas; Institut für Mikroelektronik, 2004, oral examination: 2004-10-20. BibTeX |
| 2. | R. Kosik: "Numerical Challenges on the Road to NanoTCAD"; Reviewer: T. Grasser, Ch. Schmeiser; Institut für Mikroelektronik, 2004, oral examination: 2004-09-09. BibTeX |
| 1. | T. Grasser: "Mixed-Mode Device Simulation"; Reviewer: S. Selberherr, E. Gornik; Institut für Mikroelektronik, 1999, oral examination: 1999-05-21. BibTeX |
| 25. | C. Schleich: "Charakterisierung und Modellierung von SiC Transistoren"; Supervisor: T. Grasser, M. Waltl; Institut für Mikroelektronik, 2019, final examination: 2019-01-25. BibTeX |
| 24. | P. Fleischanderl: "Charakterisierung von Hot Carrier Degradation in Siliziumtransistoren"; Supervisor: T. Grasser, M. Waltl; Institut für Mikroelektronik, 2018, final examination: 2018-11-26. BibTeX |
| 23. | D. Waldhör: "Potential Energy Surface Approximations for Nonradiative-Multiphonon Charge Transitions in Oxide Defects"; Supervisor: T. Grasser, Y. Wimmer; Institut für Mikroelektronik, 2018, final examination: 2018-10-05. BibTeX |
| 22. | A. Selinger: "Lösung der Poisson Gleichung auf Supercomputern"; Supervisor: T. Grasser, K. Rupp; Institut für Mikroelektronik, 2018, final examination: 2018-06-13. BibTeX |
| 21. | M. Bellini: "Ab Initio Study of Hexagonal Boron Nitride and Molybdenum Disulfide"; Supervisor: T. Grasser, M. Jech, Y. Wimmer; Institut für Mikroelektronik, 2017, final examination: 2017-03-09. BibTeX |
| 20. | T. Knobloch: "Characterization and Physical Modeling of Degradation in MoS2 Transistors"; Supervisor: T. Grasser, G. Rzepa; Institut für Mikroelektronik, 2016, final examination: 2016-10-07. BibTeX |
| 19. | M. Huymajer: "Cluster Detection Algorithm to Study Single Charge Trapping Events in TDDS"; Supervisor: T. Grasser, M. Waltl; Institut für Mikroelektronik, 2016, final examination: 2016-06-16. BibTeX |
| 18. | B. Stampfer: "Trap Assisted Tunneling and Band Interaction using the Non-Radiative Multi Phonon Model"; Supervisor: T. Grasser, A. Grill; Institut für Mikroelektronik, 2016, final examination: 2016-01-22. BibTeX |
| 17. | G. Rzepa: "Microscopic Modeling of NBTI in MOS Transistors"; Supervisor: T. Grasser, W. Gös; Institut für Mikroelektronik, 2013, final examination: 2013-11-20. BibTeX |
| 16. | M. Braitner: "Erstellung und Verifikation von Modellen für Leistungs-MOSFETs für die quantitative EMV-Simulation"; Supervisor: T. Grasser, P.-J. Wagner; Institut für Mikroelektronik, 2012, final examination: 2012-01-13. BibTeX |
| 15. | M. Waltl: "Change Point Detection in Time Dependent Defect Spectroscopy Data"; Supervisor: T. Grasser, P.-J. Wagner; Institut für Mikroelektronik, 2011, final examination: 2011-11-25. BibTeX |
| 14. | P. Lagger: "Scattering Operators for the Spherical Harmonics Expansion of the Boltzmann Transport Equation"; Supervisor: T. Grasser, K. Rupp; Institut für Mikroelektronik, 2011, final examination: 2011-10-07. BibTeX |
| 13. | B. Schwarz: "Simulation of Random Dopant Fluctuations with a Quantum Corrected Drift Diffusion Model"; Supervisor: T. Grasser, M. Bina; Institut für Mikroelektronik, 2011, final examination: 2011-06-17. BibTeX |
| 12. | M. Bina: "Simulation of Interface States Generated During Stress in MOSFETs"; Supervisor: T. Grasser; Institut für Mikroelektronik, 2010, final examination: 2010-04-23. BibTeX |
| 11. | Z. Stanojevic: "Simulation of Carrier Transport in Ultra-Thin-Body Devices"; Supervisor: T. Grasser; Institut für Mikroelektronik, 2009, final examination: 2009-06-19. BibTeX |
| 10. | F. Schanovsky: "Dispersive Transport Modeling within the Multiple Trapping Framework"; Supervisor: T. Grasser; Institut für Mikroelektronik, 2008, final examination: 2008-03-14. BibTeX |
| 9. | O. Baumgartner: "Simulation of Quantum Transport Using the Non-Equilibrium Green´s Functions Formalism"; Supervisor: T. Grasser, M. Karner; Institut für Mikroelektronik, 2007, final examination: 2007-01-18. BibTeX |
| 8. | M. Karner: "Multi-Dimensional Simulation of Closed Quantum Systems"; Supervisor: T. Grasser, A. Gehring; Institut für Mikroelektronik, 2004, . BibTeX |
| 7. | M. Spevak: "Simulation of Rotationally Symmetric Semiconductor Devices"; Supervisor: T. Grasser, A. Gehring; Institut für Mikroelektronik, 2004, . BibTeX |
| 6. | M. Wagner: "A Base Library for Full Band Monte Carlo Simulations"; Supervisor: T. Grasser, H. Kosina; Institut für Mikroelektronik, 2004, . BibTeX |
| 5. | R. Entner: "Three-Dimensional Device Simulation with MINIMOS-NT Using the Wafer-State-Server"; Supervisor: T. Grasser, A. Gehring; Institut für Mikroelektronik, 2003, . BibTeX |
| 4. | M. Bacher: "Implementierung einer Client/Server-Architektur mit Graphischer Benutzeroberfläche als Verteilte Anwendung"; Supervisor: E. Langer, T. Grasser; Institut für Mikroelektronik, 2002, . BibTeX |
| 3. | S. Wagner: "The Minimos-NT Linear Equation Solving Module"; Supervisor: S. Selberherr, T. Grasser; Institut für Mikroelektronik, 2001, . BibTeX |
| 2. | M. Gritsch: "Implementation of a Non-Parabolic Energy-Transport Model"; Supervisor: H. Kosina, T. Grasser; Institut für Mikroelektronik, 1999, . BibTeX |
| 1. | T. Grasser: "Ein Kontaktmodell zur Simulation von Poly-Emitter-Bipolar-Transistoren"; Supervisor: S. Selberherr, H. Kosina; Institut für Mikroelektronik, 1995, . BibTeX |
| 12. | T. Grasser: "Verification and Validation of the Coupled HCI & NBTI Model for HV Devices"; (2010), 20 page(s) . BibTeX |
| 11. | T. Grasser, M. Karner, C. Kernstock, H. Kosina, O. Triebl: "Customized Software Development Report"; (2010), 22 page(s) . BibTeX |
| 10. | H. Ceric, T. Grasser, R. Orio, M. Pourfath, M. Vasicek, S. Selberherr: "VISTA Status Report I"; (2008), 38 page(s) . BibTeX |
| 9. | T. Grasser: "Report on Coupled NBTI and HC Models for HV Devices"; (2008), 24 page(s) . BibTeX |
| 8. | T. Grasser, W. Gös, O. Triebl, Ph. Hehenberger, P.-J. Wagner, P. Schwaha, R. Heinzl, S. Holzer, R. Entner, S. Wagner, F. Schanovsky: "3 Year Report 2005-2007"; (2007), 34 page(s) . BibTeX |
| 7. | D. Grützmacher, S. Dhar, G. Milovanovic, T. Grasser, H. Kosina: "Disposable Dot Field Effect Transistor for High Speed Si Integrated Circuits"; (2007), 107 page(s) . BibTeX |
| 6. | M. Vasicek, T. Grasser: "Higher-Order Macroscopic Transport Models"; (2007), 2 page(s) . BibTeX |
| 5. | T. Grasser, M. Gritsch, C. Heitzinger, A. Hössinger, S. Selberherr: "VISTA Status Report II"; (2001), 25 page(s) . BibTeX |
| 4. | K. Dragosits, T. Grasser, R. Strasser, S. Selberherr: "VISTA Status Report I"; (1999), 31 page(s) . BibTeX |
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