Publications Alexander Grill

42 records

Books and Editorships

1.   Zemann, R., Grill, A., Hahn, I., Krebs, H., Mayr, A., Eder-Neuhauser, P., Ullmann, B. (Eds.). (2015).
Proceedings VSS 2015 - Vienna Young Scientists Symposium.
Book of Abstracts, Dipl.Ing. Heinz A. Krebs. (reposiTUm)

Publications in Scientific Journals

16.   Michl, J., Grill, A., Waldhoer, D., Goes, W., Kaczer, B., Linten, D., Parvais, B., Govoreanu, B., Radu, I., Waltl, M., Grasser, T. (2021).
Efficient Modeling of Charge Trapping at Cryogenic Temperatures-Part I: Theory.
IEEE Transactions on Electron Devices, 68(12), 6365–6371. https://doi.org/10.1109/ted.2021.3116931 (reposiTUm)

15.   Michl, J., Grill, A., Waldhoer, D., Goes, W., Kaczer, B., Linten, D., Parvais, B., Govoreanu, B., Radu, I., Grasser, T., Waltl, M. (2021).
Efficient Modeling of Charge Trapping at Cryogenic Temperatures-Part II: Experimental.
IEEE Transactions on Electron Devices, 68(12), 6372–6378. https://doi.org/10.1109/ted.2021.3117740 (reposiTUm)

14.   Jech, M., Rott, G., Reisinger, H., Tyaginov, S., Rzepa, G., Grill, A., Jabs, D., Jungemann, C., Waltl, M., Grasser, T. (2020).
Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full {VG, VD} Bias Space: Implications and Peculiarities.
IEEE Transactions on Electron Devices, 67(8), 3315–3322. https://doi.org/10.1109/ted.2020.3000749 (reposiTUm)

13.   Makarov, A., Kaczer, B., Chasin, A., Vandemaele, M., Bury, E., Jech, M., Grill, A., Hellings, G., El-Sayed, A.-M., Grasser, T., Linten, D., Tyaginov, S. (2019).
Bi-Modal Variability of nFinFET Characteristics During Hot-Carrier Stress: A Modeling Approach.
IEEE Electron Device Letters, 40(10), 1579–1582. https://doi.org/10.1109/led.2019.2933729 (reposiTUm)

12.   Grill, A., Stampfer, B., Im, K.-S., Lee, J.-H., Ostermaier, C., Ceric, H., Waltl, M., Grasser, T. (2019).
Electrostatic Coupling and Identification of Single-Defects in GaN/AlGaN Fin-Mis-HEMTs.
Solid-State Electronics, 156, 41–47. https://doi.org/10.1016/j.sse.2019.02.004 (reposiTUm)

11.   Jech, M., Ullmann, B., Rzepa, G., Tyaginov, S., Grill, A., Waltl, M., Jabs, D., Jungemann, C., Grasser, T. (2019).
Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part II: Theory.
IEEE Transactions on Electron Devices, 66(1), 241–248. https://doi.org/10.1109/ted.2018.2873421 (reposiTUm)

10.   Makarov, A., Kaczer, B., Roussel, P., Chasin, A., Grill, A., Vandemaele, M., Hellings, G., El-Sayed, A.-M., Grasser, T., Linten, D., Tyaginov, S. (2019).
Stochastic Modeling of the Impact of Random Dopants on Hot-Carrier Degradation in N-FinFETs.
IEEE Electron Device Letters, 40(6), 870–873. https://doi.org/10.1109/led.2019.2913625 (reposiTUm)

9.   Makarov, A. A., Tyaginov, S. E., Kaczer, B., Jech, M., Chasin, A., Grill, A., Hellings, G., Vexler, M. I., Linten, D., Grasser, T. (2018).
Analysis of the Features of Hot-Carrier Degradation in FinFETs.
Semiconductors, 52(10), 1298–1302. https://doi.org/10.1134/s1063782618100081 (reposiTUm)

8.   Stampfer, B., Zhang, F., Illarionov, Y. Y., Knobloch, T., Wu, P., Waltl, M., Grill, A., Appenzeller, J., Grasser, T. (2018).
Characterization of Single Defects in Ultrascaled MoS2 Field-Effect Transistors.
ACS Nano, 12(6), 5368–5375. https://doi.org/10.1021/acsnano.8b00268 (reposiTUm)

7.   Tyaginov, S. E., Makarov, A. A., Kaczer, B., Jech, M., Chasin, A., Grill, A., Hellings, G., Vexler, M. I., Linten, D., Grasser, T. (2018).
Impact of the Device Geometric Parameters on Hot-Carrier Degradation in FinFETs.
Semiconductors, 52(13), 1738–1742. https://doi.org/10.1134/s1063782618130183 (reposiTUm)

6.   Stradiotto, R., Pobegen, G., Ostermaier, C., Waltl, M., Grill, A., Grasser, T. (2017).
Characterization of Interface Defects With Distributed Activation Energies in GaN-Based MIS-HEMTs.
IEEE Transactions on Electron Devices, 64(3), 1045–1052. https://doi.org/10.1109/ted.2017.2655367 (reposiTUm)

5.   Ostermaier, C., Lagger, P., Prechtl, G., Grill, A., Grasser, T., Pogany, D. (2017).
Dynamics of Carrier Transport via AlGaN Barrier in AlGaN/GaN MIS-HEMTs.
Applied Physics Letters, 110(17), 173502. https://doi.org/10.1063/1.4982231 (reposiTUm)

4.   Waltl, M., Rzepa, G., Grill, A., Goes, W., Franco, J., Kaczer, B., Witters, L., Mitard, J., Horiguchi, N., Grasser, T. (2017).
Superior NBTI in High-K SiGe Transistors - Part I: Experimental.
IEEE Transactions on Electron Devices, 64(5), 2092–2098. https://doi.org/10.1109/ted.2017.2686086 (reposiTUm)

3.   Waltl, M., Rzepa, G., Grill, A., Goes, W., Franco, J., Kaczer, B., Witters, L., Mitard, J., Horiguchi, N., Grasser, T. (2017).
Superior NBTI in High-K SiGe Transistors - Part II: Theory.
IEEE Transactions on Electron Devices, 64(5), 2099–2105. https://doi.org/10.1109/ted.2017.2686454 (reposiTUm)

2.   Reiche, M., Kittler, M., Pippel, E., Uebensee, H., Kosina, H., Grill, A., Stanojevic, Z., Baumgartner, O. (2016).
Impact of Defect-Induced Strain on Device Properties.
Advanced Engineering Materials, 18(12), 1–4. (reposiTUm)

1.   Illarionov, Y. Y., Rzepa, G., Waltl, M., Knobloch, T., Grill, A., Furchi, M. M., Mueller, T., Grasser, T. (2016).
The Role of Charge Trapping in Mo₂/SiO₂ and MoS₂/hBN Field-Effect Transistors.
2D Materials, 3(3), 035004. https://doi.org/10.1088/2053-1583/3/3/035004 (reposiTUm)

Contributions to Books

1.   Stampfer, B., Grill, A., Waltl, M. (2020).
Advanced Electrical Characterization of Single Oxide Defects Utilizing Noise Signals.
In T. Grasser (Ed.), Noise in Nanoscale Semiconductor Devices (pp. 229–257). Springer International Publishing. https://doi.org/10.1007/978-3-030-37500-3_7 (reposiTUm)

Talks and Poster Presentations (with Proceedings-Entry)

17.   Michl, J., Grill, A., Stampfer, B., Waldhoer, D., Schleich, C., Knobloch, T., Ioannidis, E., Enichlmair, H., Minixhofer, R., Kaczer, B., Parvais, B., Govoreanu, B., Radu, I., Grasser, T., Waltl, M. (2021).
Evidence of Tunneling Driven Random Telegraph Noise in Cryo-Cmos.
In Proceedings of the IEEE International Electron Devices Meeting (IEDM) (pp. 31.3.1–31.3.4), San Francisco, CA, United States. https://doi.org/10.1109/IEDM19574.2021.9720501 (reposiTUm)

16.   Tyaginov, S., Grill, A., Vandemaele, M., Grasser, T., Hellings, G., Makarov, A., Jech, M., Linten, D., Kaczer, B. (2020).
A Compact Physics Analytical Model for Hot-Carrier Degradation.
In 2020 IEEE International Reliability Physics Symposium (IRPS), Waikoloa, HI, USA. https://doi.org/10.1109/irps45951.2020.9128327 (reposiTUm)

15.   Knobloch, T., Michl, J., Waldhör, D., Illarionov, Y., Stampfer, B., Grill, A., Zhou, R., Wu, P., Waltl, M., Appenzeller, J., Grasser, T. (2020).
Analysis of Single Electron Traps in Nano-Scaled MoS2 FETs at Cryogenic Temperatures.
In Proceedings of the Device Research Conference (DRC) (pp. 52–53), Santa-Barbara, CA, USA. (reposiTUm)

14.   Vasilev, A., Jech, M., Grill, A., Rzepa, G., Schleich, C., Makarov, A., Pobegen, G., Grasser, T., Waltl, M., Tyaginov, S. (2020).
Modeling the Hysteresis of Current-Voltage Characteristics in 4h-SiC Transistors.
In 2020 IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA. https://doi.org/10.1109/iirw49815.2020.9312864 (reposiTUm)

13.   Kruv, A., Kaczer, B., Grill, A., Gonzalez, M., Franco, J., Linten, D., Goes, W., Grasser, T., De Wolf, I. (2020).
On the Impact of Mechanical Stress on Gate Oxide Trapping.
In 2020 IEEE International Reliability Physics Symposium (IRPS), Waikoloa, HI, USA. https://doi.org/10.1109/irps45951.2020.9129541 (reposiTUm)

12.   Michl, J., Grill, A., Claes, D., Rzepa, G., Kaczer, B., Linten, D., Radu, I., Grasser, T., Waltl, M. (2020).
Quantum Mechanical Charge Trap Modeling to Explain BTI at Cryogenic Temperatures.
In 2020 IEEE International Reliability Physics Symposium (IRPS), Waikoloa, HI, USA. https://doi.org/10.1109/irps45951.2020.9128349 (reposiTUm)

11.   Grill, A., Bury, E., Michl, J., Tyaginov, S., Linten, D., Grasser, T., Parvais, B., Kaczer, B., Waltl, M., Radu, I. (2020).
Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures.
In 2020 IEEE International Reliability Physics Symposium (IRPS), Waikoloa, HI, USA. https://doi.org/10.1109/irps45951.2020.9128316 (reposiTUm)

10.   Makarov, A., Kaczer, B., Roussel, P., Chasin, A., Grill, A., Vandemaele, M., Hellings, G., El-Sayed, A., Grasser, T., Linten, D., Tyaginov, S. (2019).
Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs.
In 2019 IEEE International Reliability Physics Symposium (IRPS), Waikoloa, HI, USA. https://doi.org/10.1109/irps.2019.8720584 (reposiTUm)

9.   Tyaginov, S., El-Sayed, A., Makarov, A., Chasin, A., Arimura, H., Vandemaele, M., Jech, M., Capogreco, E., Witters, L., Grill, A., De Keersgieter, A., Eneman, G., Linten, D., Kaczer, B. (2019).
Understanding and Physical Modeling Superior Hot-Carrier Reliability of Ge pNWFETs.
In 2019 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA. https://doi.org/10.1109/iedm19573.2019.8993644 (reposiTUm)

8.   Tyaginov, S., Jech, M., Rzepa, G., Grill, A., El-Sayed, A., Pobegen, G., Makarov, A., Grasser, T. (2018).
Border Trap Based Modeling of SiC Transistor Transfer Characteristics.
In 2018 International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA. https://doi.org/10.1109/iirw.2018.8727083 (reposiTUm)

7.   Grill, A., Stampfer, B., Waltl, M., Im, K., Lee, J., Ostermaier, C., Ceric, H., Grasser, T. (2017).
Characterization and Modeling of Single Defects in GaN/AlGaN Fin-Mis-HEMTs.
In 2017 IEEE International Reliability Physics Symposium (IRPS), Waikoloa, HI, USA. https://doi.org/10.1109/irps.2017.7936285 (reposiTUm)

6.   Rzepa, G., Franco, J., Subirats, A., Jech, M., Chasin, A., Grill, A., Waltl, M., Knobloch, T., Stampfer, B., Chiarella, T., Horiguchi, N., Ragnarsson, L., Linten, D., Kaczer, B., Grasser, T. (2017).
Efficient Physical Defect Model Applied to PBTI in High-κ Stacks.
In Proceedings of the IEEE International Reliability Physics Symposium (IRPS) (pp. XT-11.1–XT-11.6), Waikoloa, HI, USA. (reposiTUm)

5.   Makarov, A., Tyaginov, S., Kaczer, B., Jech, M., Chasin, A., Grill, A., Hellings, G., Vexler, M., Linten, D., Grasser, T. (2017).
Hot-Carrier Degradation in FinFETs: Modeling, Peculiarities, and Impact of Device Topology.
In 2017 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA. https://doi.org/10.1109/iedm.2017.8268381 (reposiTUm)

4.   Ullmann, B., Jech, M., Tyaginov, S., Waltl, M., Illarionov, Y., Grill, A., Puschkarsky, K., Reisinger, H., Grasser, T. (2017).
The Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on Single Oxide Defects.
In 2017 IEEE International Reliability Physics Symposium (IRPS), Phoenix. https://doi.org/10.1109/irps.2017.7936424 (reposiTUm)

3.   Waltl, M., Grill, A., Rzepa, G., Goes, W., Franco, J., Kaczer, B., Mitard, J., Grasser, T. (2016).
Nanoscale Evidence for the Superior Reliability of SiGe High-K pMOSFETs.
In 2016 IEEE International Reliability Physics Symposium (IRPS), Phoenix. https://doi.org/10.1109/irps.2016.7574644 (reposiTUm)

2.   Grill, A., Rzepa, G., Lagger, P., Ostermaier, C., Ceric, H., Grasser, T. (2015).
Charge Feedback Mechanisms at Forward Threshold Voltage Stress in GaN/AlGaN HEMTs.
In 2015 IEEE International Integrated Reliability Workshop (IIRW), S. Lake Tahoe. https://doi.org/10.1109/iirw.2015.7437064 (reposiTUm)

1.   Baumgartner, O., Stanojevic, Z., Filipovic, L., Grill, A., Grasser, T., Kosina, H., Karner, M. (2014).
Investigation of Quantum Transport in Nanoscaled GaN High Electron Mobility Transistors.
In 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan. https://doi.org/10.1109/sispad.2014.6931577 (reposiTUm)

Talks and Poster Presentations (without Proceedings-Entry)

4.   Illarionov, Y., Stampfer, B., Zhang, F., Knobloch, T., Wu, P., Waltl, M., Grill, A., Appenzeller, J., Grasser, T. (2018).
Characterization of Single Defects: From Si to MoS2 FETs.
International Conference on Physics of 2D Crystals (ICP2C3), Valetta, Malta, EU. (reposiTUm)

3.   Ostermaier, C., Lagger, P. W., Reiner, M., Grill, A., Stradiotto, R., Pobegen, G., Grasser, T., Pietschnig, R., Pogany, D. (2017).
Review of Bias-Temperature Instabilities at the III-N/dielectric Interface.
European Symposium on Reliability of Electron Devices, Failure Physics and Analysis  (ESREF), Maastricht, EU. (reposiTUm)

2.   Windbacher, T., Ullmann, B., Grill, A., Weinbub, J. (2016).
Ihr Smartphone - Ein Supercomputer Vor 20 Jahren. Ein Einblick in Die Mikro- Und Nanoelektronik.
European Researchers’ Night: beSCIENCEd 2016, Wien, Austria. (reposiTUm)

1.   Ostermaier, C., Lagger, P. W., Prechtl, G., Grill, A., Grasser, T., Pogany, D. (2015).
The Role of Electron Transport in the Charge Trapping at the III-N/dielectric Interface in AlGaN/GaN MIS-HEMT Structures.
Semiconductor Interface Specialists Conference, Arlington, VA, USA, Non-EU. (reposiTUm)

Doctor's Theses (authored and supervised)

1.   Grill, A. (2018).
Charge Trapping and Single-Defect Extraction in Gallium-Nitride Based MIS-HEMTs
Technische Universität Wien. https://doi.org/10.34726/hss.2018.60228 (reposiTUm)

Diploma and Master Theses (authored and supervised)

2.   Stampfer, B. (2016).
Trap Assisted Tunneling and Band Interaction Using the Non-Radiative Multi Phonon Model
Technische Universität Wien. https://doi.org/10.34726/hss.2016.35327 (reposiTUm)

1.   Grill, A. (2013).
A Framework for Simulation and Parameter Optimization of a 90nm CMOS Process in Sentaurus
Technische Universität Wien. (reposiTUm)