Staff Person Publications

Publications Alexander Grill

40 records

Books and Editorships

1.	R. Zemann, A. Grill, I. Hahn, H. Krebs, A. Mayr, P. Eder-Neuhauser, B. Ullmann: "Proceedings VSS 2015 - Vienna young Scientists Symposium"; Book of Abstracts, Dipl.Ing. Heinz A. Krebs, 2352 Gumpoldskirchen, (2015), ISBN: 978-3-9504017-07, 182 page(s) . BibTeX

Publications in Scientific Journals

14.	M. Jech, G.A. Rott, H. Reisinger, S. Tyaginov, G. Rzepa, A. Grill, D. Jabs, C. Jungemann, M. Waltl, T. Grasser: "Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full {V_G, V_D} Bias Space: Implications and Peculiarities"; IEEE Transactions on Electron Devices, 67, (2020), 3315 - 3322 doi:10.1109/TED.2020.3000749. BibTeX
13.	A. Grill, B. Stampfer, K.-S. Im, J. Lee, C. Ostermaier, H. Ceric, M. Waltl, T. Grasser: "Electrostatic Coupling and Identification of Single-Defects in GaN/AlGaN Fin-MIS-HEMTs"; Solid-State Electronics, 19, (2019), 41 - 47 doi:10.1016/j.sse.2019.02.004. BibTeX
12.	M. Jech, B. Ullmann, G. Rzepa, S. E. Tyaginov, A. Grill, M. Waltl, D. Jabs, C. Jungemann, T. Grasser: "Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part II: Theory"; IEEE Transactions on Electron Devices, 66, (2019), 241 - 248 doi:10.1109/TED.2018.2873421. BibTeX
11.	A. Makarov, B. Kaczer, A. Chasin, M. Vandemaele, E. Bury, M. Jech, A. Grill, G. Hellings, A.-M. El-Sayed, T. Grasser, D. Linten, S. E. Tyaginov: "Bi-Modal Variability of nFinFET Characteristics During Hot-Carrier Stress: A Modeling Approach"; IEEE Electron Device Letters, 40, (2019), 1579 - 1582 doi:10.1109/LED.2019.2933729. BibTeX
10.	A. Makarov, B. Kaczer, Ph. Roussel, A. Chasin, A. Grill, M. Vandemaele, G. Hellings, A.-M. El-Sayed, T. Grasser, D. Linten, S. E. Tyaginov: "Stochastic Modeling of the Impact of Random Dopants on Hot-Carrier Degradation in n-FinFETs"; IEEE Electron Device Letters, 40, (2019), 870 - 873 doi:10.1109/LED.2019.2913625. BibTeX
9.	A. Makarov, S. E. Tyaginov, B. Kaczer, M. Jech, A. Chasin, A. Grill, G. Hellings, M. I. Vexler, D. Linten, T. Grasser: "Analysis of the Features of Hot-Carrier Degradation in FinFETs"; Semiconductors (Physics of Semiconductor Devices), 52, (2018), 1177 - 1182 doi:10.1134/S1063782618100081. BibTeX
8.	B. Stampfer, F. Zhang, Yu. Illarionov, T. Knobloch, P. Wu, M. Waltl, A. Grill, J. Appenzeller, T. Grasser: "Characterization of Single Defects in Ultrascaled MoS2 Field-Effect Transistors"; ACS Nano, 12, (2018), 5368 - 5375 doi:10.1021/acsnano.8b00268. BibTeX
7.	S. E. Tyaginov, A. Makarov, B. Kaczer, M. Jech, A. Chasin, A. Grill, G. Hellings, M. I. Vexler, D. Linten, T. Grasser: "Impact of the Device Geometric Parameters on Hot-Carrier Degradation in FinFETs"; Semiconductors (Physics of Semiconductor Devices), 52, (2018), 1738 - 1742 doi:10.1134/S1063782618130183. BibTeX
6.	C. Ostermaier, P. Lagger, G. Prechtl, A. Grill, T. Grasser, D. Pogany: "Dynamics of Carrier Transport via AlGaN Barrier in AlGaN/GaN MIS-HEMTs"; Applied Physics Letters, 110, (2017), 1 - 4 doi:10.1063/1.4982231. BibTeX
5.	R. Stradiotto, G. Pobegen, C. Ostermaier, M. Waltl, A. Grill, T. Grasser: "Characterization of Interface Defects With Distributed Activation Energies in GaN-Based MIS-HEMTs"; IEEE Transactions on Electron Devices, 64, (2017), 1045 - 1052 doi:10.1109/TED.2017.2655367. BibTeX
4.	M. Waltl, G. Rzepa, A. Grill, W. Gös, J. Franco, B. Kaczer, L. Witters, J. Mitard, N. Horiguchi, T. Grasser: "Superior NBTI in High-k SiGe Transistors - Part I: Experimental"; IEEE Transactions on Electron Devices, 64, (2017), 2092 - 2098 doi:10.1109/TED.2017.2686086. BibTeX
3.	M. Waltl, G. Rzepa, A. Grill, W. Gös, J. Franco, B. Kaczer, L. Witters, J. Mitard, N. Horiguchi, T. Grasser: "Superior NBTI in High-k SiGe Transistors - Part II: Theory"; IEEE Transactions on Electron Devices, 64, (2017), 2099 - 2105 doi:10.1109/TED.2017.2686454. BibTeX
2.	Yu. Illarionov, G. Rzepa, M. Waltl, T. Knobloch, A. Grill, M. M. Furchi, T. Müller, T. Grasser: "The Role of Charge Trapping in MoS₂/SiO₂ and MoS₂/hBN Field-Effect Transistors"; 2D Materials, 3, (2016), 035004-1 - 035004-10 doi:10.1088/2053-1583/3/3/035004. BibTeX
1.	M. Reiche, M. Kittler, E. Pippel, H. Uebensee, H. Kosina, A. Grill, Z. Stanojevic, O. Baumgartner: "Impact of Defect-Induced Strain on Device Properties"; Advanced Engineering Materials, 18, (2016), 1 - 4 doi:10.1002/adem.201600736. BibTeX

Contributions to Books

B. Stampfer, A. Grill, M. Waltl:
"Advanced Electrical Characterization of Single Oxide Defects Utilizing Noise Signals";
in "Noise in Nanoscale Semiconductor Devices", T. Grasser (ed); Springer International Publishing, 2020, ISBN: 978-3-030-37499-0, 229 - 257 doi:10.1007/978-3-030-37500-3_7. BibTeX

Talks and Poster Presentations (with Proceedings-Entry)

16.	A. Vasilev, M. Jech, A. Grill, G. Rzepa, C. Schleich, A. Makarov, G. Pobegen, T. Grasser, M. Waltl, S. E. Tyaginov: "Modeling the Hysteresis of Current-Voltage Characteristics in 4H-SiC Transistors"; Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA - virtual; 2020-10-04 - 2020-10-08; in "Proceedings of the International Integrated Reliability Workshop (IIRW)", (2020), 1 - 4 doi:10.1109/IIRW49815.2020.9312864. BibTeX
15.	T. Knobloch, J. Michl, D. Waldhör, Yu. Illarionov, B. Stampfer, A. Grill, R. Zhou, P. Wu, M. Waltl, J. Appenzeller, T. Grasser: "Analysis of Single Electron Traps in Nano-scaled MoS₂ FETs at Cryogenic Temperatures"; Talk: Device Research Conference (DRC), Columbus, OH, USA - virtual; 2020-06-21 - 2020-06-24; in "Proceedings of the Device Research Conference (DRC)", (2020), 52 - 53. BibTeX
14.	A. Grill, E. Bury, J. Michl, S. Tyaginov, D. Linten, T. Grasser, B. Parvais, B. Kaczer, M. Waltl, I. Radu: "Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures"; Talk: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 2020-04-28 - 2020-05-30; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), ISBN: 978-1-7281-3199-3, 1 - 6 doi:10.1109/IRPS45951.2020.9128316. BibTeX
13.	A. Kruv, B. Kaczer, A. Grill, M. Gonzalez, J. Franco, D. Linten, W. Goes, T. Grasser, I. De Wolf: "On the Impact of Mechanical Stress on Gate Oxide Trapping"; Talk: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 2020-04-28 - 2020-05-30; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), 1 - 5 doi:10.1109/IRPS45951.2020.9129541. BibTeX
12.	J. Michl, A. Grill, D. Claes, G. Rzepa, B. Kaczer, D. Linten, I. Radu, T. Grasser, M. Waltl: "Quantum Mechanical Charge Trap Modeling to Explain BTI at Cryogenic Temperatures"; Talk: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 2020-04-28 - 2020-05-30; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), ISBN: 978-1-7281-3199-3, 1 - 6 doi:10.1109/IRPS45951.2020.9128349. BibTeX
11.	S. Tyaginov, A. Grill, M. Vandemaele, T. Grasser, G. Hellings, A. Makarov, M. Jech, D. Linten, B. Kaczer: "A Compact Physics Analytical Model for Hot-Carrier Degradation"; Talk: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 2020-04-28 - 2020-05-30; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), ISBN: 978-1-7281-3199-3, 1 - 7 doi:10.1109/IRPS45951.2020.9128327. BibTeX
10.	S. Tyaginov, A. El-Sayed, A. Makarov, A. Chasin, H. Arimura, M. Vandemaele, M. Jech, E. Capogreco, L. Witters, A. Grill, A. De Keersgieter, G. Eneman, D. Linten, B. Kaczer: "Understanding and Physical Modeling Superior Hot-Carrier Reliability of Ge pNWFETs"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 2019-12-07 - 2019-12-11; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2019), ISBN: 978-1-7281-4032-2, 498 - 501 doi:10.1109/IEDM19573.2019.8993644. BibTeX
9.	A. Makarov, B. Kaczer, Ph. Roussel, A. Chasin, A. Grill, M. Vandemaele, G. Hellings, A.-M. El-Sayed, T. Grasser, D. Linten, S. E. Tyaginov: "Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs"; Talk: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2019-03-31 - 2019-04-04; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2019), ISBN: 978-1-5386-9504-3, doi:10.1109/IRPS.2019.8720584. BibTeX
8.	S. E. Tyaginov, M. Jech, G. Rzepa, A. Grill, A.-M. El-Sayed, G. Pobegen, A. Makarov, T. Grasser: "Border Trap Based Modeling of SiC Transistor Transfer Characteristics"; Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2018-10-07 - 2018-10-11; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2018), ISBN: 978-1-5386-6039-3, doi:10.1109/IIRW.2018.8727083. BibTeX
7.	A. Makarov, S. E. Tyaginov, B. Kaczer, M. Jech, A. Chasin, A. Grill, G. Hellings, M. Vexler, D. Linten, T. Grasser: "Hot-Carrier Degradation in FinFETs: Modeling, Peculiarities, and Impact of Device Topology"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 2017-12-02 - 2017-12-06; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2017), ISBN: 978-1-5386-3559-9, 310 - 313 doi:10.1109/IEDM.2017.8268381. BibTeX
6.	B. Ullmann, M. Jech, S. E. Tyaginov, M. Waltl, Yu. Illarionov, A. Grill, K. Puschkarsky, H. Reisinger, T. Grasser: "The Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on Single Oxide Defects"; Poster: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2017-04-04 - 2017-04-06; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6642-1, XT-10.1 - XT-10.6 doi:10.1109/IRPS.2017.7936424. BibTeX
5.	A. Grill, B. Stampfer, M. Waltl, K.-S. Im, J. Lee, C. Ostermaier, H. Ceric, T. Grasser: "Characterization and Modeling of Single Defects in GaN/AlGaN Fin-MIS-HEMTs"; Talk: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2017-04-02 - 2017-04-06; in "Proceedings of IEEE International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6641-4, 3B-5.1 - 3B-5.5 doi:10.1109/IRPS.2017.7936285. BibTeX
4.	G. Rzepa, J. Franco, A. Subirats, M. Jech, A. Chasin, A. Grill, M. Waltl, T. Knobloch, B. Stampfer, T. Chiarella, N. Horiguchi, L. Ragnarsson, D. Linten, B. Kaczer, T. Grasser: "Efficient Physical Defect Model Applied to PBTI in High-κ Stacks"; Poster: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2017-04-02 - 2017-04-06; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6641-4, XT-11.1 - XT-11.6. BibTeX
3.	M. Waltl, A. Grill, G. Rzepa, W. Gös, J. Franco, B. Kaczer, J. Mitard, T. Grasser: "Nanoscale Evidence for the Superior Reliability of SiGe High-k pMOSFETs"; Poster: International Reliability Physics Symposium (IRPS), Pasadena, CA, USA; 2016-04-17 - 2016-04-21; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2016), XT-02-1 - XT-02-6 doi:10.1109/IRPS.2016.7574644. BibTeX
2.	A. Grill, G. Rzepa, P. Lagger, C. Ostermaier, H. Ceric, T. Grasser: "Charge Feedback Mechanisms at Forward Threshold Voltage Stress in GaN/AlGaN HEMTs"; Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2015-10-11 - 2015-10-15; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2015), ISBN: 978-1-4673-7395-1, 41 - 45 doi:10.1109/IIRW.2015.7437064. BibTeX
1.	O. Baumgartner, Z. Stanojevic, L. Filipovic, A. Grill, T. Grasser, H. Kosina, M. Karner: "Investigation of Quantum Transport in Nanoscaled GaN High Electron Mobility Transistors"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 2014-09-09 - 2014-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 117 - 120 doi:10.1109/SISPAD.2014.6931577. BibTeX

Talks and Poster Presentations (without Proceedings-Entry)

5.	Yu. Illarionov, B. Stampfer, F. Zhang, T. Knobloch, P. Wu, M. Waltl, A. Grill, J. Appenzeller, T. Grasser: "Characterization of Single Defects: from Si to MoS2 FETs"; Poster: International Conference on Physics of 2D Crystals (ICP2C3), Valetta, Malta; 2018-05-29 - 2018-06-02; . BibTeX
4.	C. Ostermaier, P. Lagger, M. Reiner, A. Grill, R. Stradiotto, G. Pobegen, T. Grasser, R. Pietschnig, D. Pogany: "Review of bias-temperature instabilities at the III-N/dielectric interface"; Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Bordequx, Frankreich; 2017-09-25 - 2017-09-28; . BibTeX
3.	T. Windbacher, B. Ullmann, A. Grill, J. Weinbub: "Ihr Smartphone - ein Supercomputer vor 20 Jahren. Ein Einblick in die Mikro- und Nanoelektronik"; Talk: European Researchers' Night: beSCIENCEd 2016, Wien; 2016-09-30. BibTeX
2.	B. Ullmann, A. Grill, P. Manstetten, M. Jech, M. Kampl, W. H. Zisser, L. Filipovic, M. Thesberg, F. Rudolf, T. Windbacher, J. Cervenka, M. Katterbauer, J. Weinbub: "Ihr Smartphone - ein Supercomputer vor 20 Jahren. Ein Einblick in die Mikro- und Nanoelektronik"; Talk: Lange Nacht der Forschung 2016, Wien; 2016-04-22. BibTeX
1.	C. Ostermaier, P. Lagger, G. Prechtl, A. Grill, T. Grasser, D. Pogany: "The role of electron transport in the charge trapping at the III-N/dielectric interface in AlGaN/GaN MIS-HEMT structures"; Talk: Semiconductor Interface Specialists Conference, Arlington, VA, USA; 2015-12-02 - 2015-12-05; . BibTeX

Doctor's Theses (authored and supervised)

1.	A. Grill: "Charge Trapping and Single-Defect Extraction in Gallium-Nitride Based MIS-HEMTs"; Reviewer: T. Grasser, G. Meneghesso, D. Pogany; Institut für Mikroelektronik, 2018, oral examination: 2018-10-22 doi:10.34726/hss.2018.60228. BibTeX

Diploma and Master Theses (authored and supervised)

2.	B. Stampfer: "Trap Assisted Tunneling and Band Interaction using the Non-Radiative Multi Phonon Model"; Supervisor: T. Grasser, A. Grill; Institut für Mikroelektronik, 2016, final examination: 2016-01-22. BibTeX
1.	A. Grill: "A framework for simulation and parameter optimization of a 90nm CMOS process in Sentaurus"; Supervisor: H. Zimmermann, K. Schweiger; E354, 2013, final examination: 2013-01-30. BibTeX