Publications Alexander Grill
42 recordsBooks and Editorships
1. | Zemann, R., Grill, A., Hahn, I., Krebs, H., Mayr, A., Eder-Neuhauser, P., Ullmann, B. (Eds.). (2015). Proceedings VSS 2015 - Vienna Young Scientists Symposium. Book of Abstracts, Dipl.Ing. Heinz A. Krebs. (reposiTUm) | |
Publications in Scientific Journals
16. | Michl, J., Grill, A., Waldhoer, D., Goes, W., Kaczer, B., Linten, D., Parvais, B., Govoreanu, B., Radu, I., Waltl, M., Grasser, T. (2021). Efficient Modeling of Charge Trapping at Cryogenic Temperatures-Part I: Theory. IEEE Transactions on Electron Devices, 68(12), 6365–6371. https://doi.org/10.1109/ted.2021.3116931 (reposiTUm) | |
15. | Michl, J., Grill, A., Waldhoer, D., Goes, W., Kaczer, B., Linten, D., Parvais, B., Govoreanu, B., Radu, I., Grasser, T., Waltl, M. (2021). Efficient Modeling of Charge Trapping at Cryogenic Temperatures-Part II: Experimental. IEEE Transactions on Electron Devices, 68(12), 6372–6378. https://doi.org/10.1109/ted.2021.3117740 (reposiTUm) | |
14. | Jech, M., Rott, G., Reisinger, H., Tyaginov, S., Rzepa, G., Grill, A., Jabs, D., Jungemann, C., Waltl, M., Grasser, T. (2020). Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full {VG, VD} Bias Space: Implications and Peculiarities. IEEE Transactions on Electron Devices, 67(8), 3315–3322. https://doi.org/10.1109/ted.2020.3000749 (reposiTUm) | |
13. | Makarov, A., Kaczer, B., Chasin, A., Vandemaele, M., Bury, E., Jech, M., Grill, A., Hellings, G., El-Sayed, A.-M., Grasser, T., Linten, D., Tyaginov, S. (2019). Bi-Modal Variability of nFinFET Characteristics During Hot-Carrier Stress: A Modeling Approach. IEEE Electron Device Letters, 40(10), 1579–1582. https://doi.org/10.1109/led.2019.2933729 (reposiTUm) | |
12. | Grill, A., Stampfer, B., Im, K.-S., Lee, J.-H., Ostermaier, C., Ceric, H., Waltl, M., Grasser, T. (2019). Electrostatic Coupling and Identification of Single-Defects in GaN/AlGaN Fin-Mis-HEMTs. Solid-State Electronics, 156, 41–47. https://doi.org/10.1016/j.sse.2019.02.004 (reposiTUm) | |
11. | Jech, M., Ullmann, B., Rzepa, G., Tyaginov, S., Grill, A., Waltl, M., Jabs, D., Jungemann, C., Grasser, T. (2019). Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part II: Theory. IEEE Transactions on Electron Devices, 66(1), 241–248. https://doi.org/10.1109/ted.2018.2873421 (reposiTUm) | |
10. | Makarov, A., Kaczer, B., Roussel, P., Chasin, A., Grill, A., Vandemaele, M., Hellings, G., El-Sayed, A.-M., Grasser, T., Linten, D., Tyaginov, S. (2019). Stochastic Modeling of the Impact of Random Dopants on Hot-Carrier Degradation in N-FinFETs. IEEE Electron Device Letters, 40(6), 870–873. https://doi.org/10.1109/led.2019.2913625 (reposiTUm) | |
9. | Makarov, A. A., Tyaginov, S. E., Kaczer, B., Jech, M., Chasin, A., Grill, A., Hellings, G., Vexler, M. I., Linten, D., Grasser, T. (2018). Analysis of the Features of Hot-Carrier Degradation in FinFETs. Semiconductors, 52(10), 1298–1302. https://doi.org/10.1134/s1063782618100081 (reposiTUm) | |
8. | Stampfer, B., Zhang, F., Illarionov, Y. Y., Knobloch, T., Wu, P., Waltl, M., Grill, A., Appenzeller, J., Grasser, T. (2018). Characterization of Single Defects in Ultrascaled MoS2 Field-Effect Transistors. ACS Nano, 12(6), 5368–5375. https://doi.org/10.1021/acsnano.8b00268 (reposiTUm) | |
7. | Tyaginov, S. E., Makarov, A. A., Kaczer, B., Jech, M., Chasin, A., Grill, A., Hellings, G., Vexler, M. I., Linten, D., Grasser, T. (2018). Impact of the Device Geometric Parameters on Hot-Carrier Degradation in FinFETs. Semiconductors, 52(13), 1738–1742. https://doi.org/10.1134/s1063782618130183 (reposiTUm) | |
6. | Stradiotto, R., Pobegen, G., Ostermaier, C., Waltl, M., Grill, A., Grasser, T. (2017). Characterization of Interface Defects With Distributed Activation Energies in GaN-Based MIS-HEMTs. IEEE Transactions on Electron Devices, 64(3), 1045–1052. https://doi.org/10.1109/ted.2017.2655367 (reposiTUm) | |
5. | Ostermaier, C., Lagger, P., Prechtl, G., Grill, A., Grasser, T., Pogany, D. (2017). Dynamics of Carrier Transport via AlGaN Barrier in AlGaN/GaN MIS-HEMTs. Applied Physics Letters, 110(17), 173502. https://doi.org/10.1063/1.4982231 (reposiTUm) | |
4. | Waltl, M., Rzepa, G., Grill, A., Goes, W., Franco, J., Kaczer, B., Witters, L., Mitard, J., Horiguchi, N., Grasser, T. (2017). Superior NBTI in High-K SiGe Transistors - Part I: Experimental. IEEE Transactions on Electron Devices, 64(5), 2092–2098. https://doi.org/10.1109/ted.2017.2686086 (reposiTUm) | |
3. | Waltl, M., Rzepa, G., Grill, A., Goes, W., Franco, J., Kaczer, B., Witters, L., Mitard, J., Horiguchi, N., Grasser, T. (2017). Superior NBTI in High-K SiGe Transistors - Part II: Theory. IEEE Transactions on Electron Devices, 64(5), 2099–2105. https://doi.org/10.1109/ted.2017.2686454 (reposiTUm) | |
2. | Reiche, M., Kittler, M., Pippel, E., Uebensee, H., Kosina, H., Grill, A., Stanojevic, Z., Baumgartner, O. (2016). Impact of Defect-Induced Strain on Device Properties. Advanced Engineering Materials, 18(12), 1–4. (reposiTUm) | |
1. | Illarionov, Y. Y., Rzepa, G., Waltl, M., Knobloch, T., Grill, A., Furchi, M. M., Mueller, T., Grasser, T. (2016). The Role of Charge Trapping in Mo₂/SiO₂ and MoS₂/hBN Field-Effect Transistors. 2D Materials, 3(3), 035004. https://doi.org/10.1088/2053-1583/3/3/035004 (reposiTUm) | |
Contributions to Books
1. | Stampfer, B., Grill, A., Waltl, M. (2020). Advanced Electrical Characterization of Single Oxide Defects Utilizing Noise Signals. In T. Grasser (Ed.), Noise in Nanoscale Semiconductor Devices (pp. 229–257). Springer International Publishing. https://doi.org/10.1007/978-3-030-37500-3_7 (reposiTUm) | |
Talks and Poster Presentations (with Proceedings-Entry)
17. | Michl, J., Grill, A., Stampfer, B., Waldhoer, D., Schleich, C., Knobloch, T., Ioannidis, E., Enichlmair, H., Minixhofer, R., Kaczer, B., Parvais, B., Govoreanu, B., Radu, I., Grasser, T., Waltl, M. (2021). Evidence of Tunneling Driven Random Telegraph Noise in Cryo-Cmos. In Proceedings of the IEEE International Electron Devices Meeting (IEDM) (pp. 31.3.1–31.3.4), San Francisco, CA, United States. https://doi.org/10.1109/IEDM19574.2021.9720501 (reposiTUm) | |
16. | Tyaginov, S., Grill, A., Vandemaele, M., Grasser, T., Hellings, G., Makarov, A., Jech, M., Linten, D., Kaczer, B. (2020). A Compact Physics Analytical Model for Hot-Carrier Degradation. In 2020 IEEE International Reliability Physics Symposium (IRPS), Waikoloa, HI, USA. https://doi.org/10.1109/irps45951.2020.9128327 (reposiTUm) | |
15. | Knobloch, T., Michl, J., Waldhör, D., Illarionov, Y., Stampfer, B., Grill, A., Zhou, R., Wu, P., Waltl, M., Appenzeller, J., Grasser, T. (2020). Analysis of Single Electron Traps in Nano-Scaled MoS2 FETs at Cryogenic Temperatures. In Proceedings of the Device Research Conference (DRC) (pp. 52–53), Santa-Barbara, CA, USA. (reposiTUm) | |
14. | Vasilev, A., Jech, M., Grill, A., Rzepa, G., Schleich, C., Makarov, A., Pobegen, G., Grasser, T., Waltl, M., Tyaginov, S. (2020). Modeling the Hysteresis of Current-Voltage Characteristics in 4h-SiC Transistors. In 2020 IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA. https://doi.org/10.1109/iirw49815.2020.9312864 (reposiTUm) | |
13. | Kruv, A., Kaczer, B., Grill, A., Gonzalez, M., Franco, J., Linten, D., Goes, W., Grasser, T., De Wolf, I. (2020). On the Impact of Mechanical Stress on Gate Oxide Trapping. In 2020 IEEE International Reliability Physics Symposium (IRPS), Waikoloa, HI, USA. https://doi.org/10.1109/irps45951.2020.9129541 (reposiTUm) | |
12. | Michl, J., Grill, A., Claes, D., Rzepa, G., Kaczer, B., Linten, D., Radu, I., Grasser, T., Waltl, M. (2020). Quantum Mechanical Charge Trap Modeling to Explain BTI at Cryogenic Temperatures. In 2020 IEEE International Reliability Physics Symposium (IRPS), Waikoloa, HI, USA. https://doi.org/10.1109/irps45951.2020.9128349 (reposiTUm) | |
11. | Grill, A., Bury, E., Michl, J., Tyaginov, S., Linten, D., Grasser, T., Parvais, B., Kaczer, B., Waltl, M., Radu, I. (2020). Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures. In 2020 IEEE International Reliability Physics Symposium (IRPS), Waikoloa, HI, USA. https://doi.org/10.1109/irps45951.2020.9128316 (reposiTUm) | |
10. | Makarov, A., Kaczer, B., Roussel, P., Chasin, A., Grill, A., Vandemaele, M., Hellings, G., El-Sayed, A., Grasser, T., Linten, D., Tyaginov, S. (2019). Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs. In 2019 IEEE International Reliability Physics Symposium (IRPS), Waikoloa, HI, USA. https://doi.org/10.1109/irps.2019.8720584 (reposiTUm) | |
9. | Tyaginov, S., El-Sayed, A., Makarov, A., Chasin, A., Arimura, H., Vandemaele, M., Jech, M., Capogreco, E., Witters, L., Grill, A., De Keersgieter, A., Eneman, G., Linten, D., Kaczer, B. (2019). Understanding and Physical Modeling Superior Hot-Carrier Reliability of Ge pNWFETs. In 2019 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA. https://doi.org/10.1109/iedm19573.2019.8993644 (reposiTUm) | |
8. | Tyaginov, S., Jech, M., Rzepa, G., Grill, A., El-Sayed, A., Pobegen, G., Makarov, A., Grasser, T. (2018). Border Trap Based Modeling of SiC Transistor Transfer Characteristics. In 2018 International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA. https://doi.org/10.1109/iirw.2018.8727083 (reposiTUm) | |
7. | Grill, A., Stampfer, B., Waltl, M., Im, K., Lee, J., Ostermaier, C., Ceric, H., Grasser, T. (2017). Characterization and Modeling of Single Defects in GaN/AlGaN Fin-Mis-HEMTs. In 2017 IEEE International Reliability Physics Symposium (IRPS), Waikoloa, HI, USA. https://doi.org/10.1109/irps.2017.7936285 (reposiTUm) | |
6. | Rzepa, G., Franco, J., Subirats, A., Jech, M., Chasin, A., Grill, A., Waltl, M., Knobloch, T., Stampfer, B., Chiarella, T., Horiguchi, N., Ragnarsson, L., Linten, D., Kaczer, B., Grasser, T. (2017). Efficient Physical Defect Model Applied to PBTI in High-κ Stacks. In Proceedings of the IEEE International Reliability Physics Symposium (IRPS) (pp. XT-11.1–XT-11.6), Waikoloa, HI, USA. (reposiTUm) | |
5. | Makarov, A., Tyaginov, S., Kaczer, B., Jech, M., Chasin, A., Grill, A., Hellings, G., Vexler, M., Linten, D., Grasser, T. (2017). Hot-Carrier Degradation in FinFETs: Modeling, Peculiarities, and Impact of Device Topology. In 2017 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA. https://doi.org/10.1109/iedm.2017.8268381 (reposiTUm) | |
4. | Ullmann, B., Jech, M., Tyaginov, S., Waltl, M., Illarionov, Y., Grill, A., Puschkarsky, K., Reisinger, H., Grasser, T. (2017). The Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on Single Oxide Defects. In 2017 IEEE International Reliability Physics Symposium (IRPS), Phoenix. https://doi.org/10.1109/irps.2017.7936424 (reposiTUm) | |
3. | Waltl, M., Grill, A., Rzepa, G., Goes, W., Franco, J., Kaczer, B., Mitard, J., Grasser, T. (2016). Nanoscale Evidence for the Superior Reliability of SiGe High-K pMOSFETs. In 2016 IEEE International Reliability Physics Symposium (IRPS), Phoenix. https://doi.org/10.1109/irps.2016.7574644 (reposiTUm) | |
2. | Grill, A., Rzepa, G., Lagger, P., Ostermaier, C., Ceric, H., Grasser, T. (2015). Charge Feedback Mechanisms at Forward Threshold Voltage Stress in GaN/AlGaN HEMTs. In 2015 IEEE International Integrated Reliability Workshop (IIRW), S. Lake Tahoe. https://doi.org/10.1109/iirw.2015.7437064 (reposiTUm) | |
1. | Baumgartner, O., Stanojevic, Z., Filipovic, L., Grill, A., Grasser, T., Kosina, H., Karner, M. (2014). Investigation of Quantum Transport in Nanoscaled GaN High Electron Mobility Transistors. In 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan. https://doi.org/10.1109/sispad.2014.6931577 (reposiTUm) | |
Talks and Poster Presentations (without Proceedings-Entry)
4. | Illarionov, Y., Stampfer, B., Zhang, F., Knobloch, T., Wu, P., Waltl, M., Grill, A., Appenzeller, J., Grasser, T. (2018). Characterization of Single Defects: From Si to MoS2 FETs. International Conference on Physics of 2D Crystals (ICP2C3), Valetta, Malta, EU. (reposiTUm) | |
3. | Ostermaier, C., Lagger, P. W., Reiner, M., Grill, A., Stradiotto, R., Pobegen, G., Grasser, T., Pietschnig, R., Pogany, D. (2017). Review of Bias-Temperature Instabilities at the III-N/dielectric Interface. European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Maastricht, EU. (reposiTUm) | |
2. | Windbacher, T., Ullmann, B., Grill, A., Weinbub, J. (2016). Ihr Smartphone - Ein Supercomputer Vor 20 Jahren. Ein Einblick in Die Mikro- Und Nanoelektronik. European Researchers’ Night: beSCIENCEd 2016, Wien, Austria. (reposiTUm) | |
1. | Ostermaier, C., Lagger, P. W., Prechtl, G., Grill, A., Grasser, T., Pogany, D. (2015). The Role of Electron Transport in the Charge Trapping at the III-N/dielectric Interface in AlGaN/GaN MIS-HEMT Structures. Semiconductor Interface Specialists Conference, Arlington, VA, USA, Non-EU. (reposiTUm) | |
Doctor's Theses (authored and supervised)
1. | Grill, A. (2018). Charge Trapping and Single-Defect Extraction in Gallium-Nitride Based MIS-HEMTs Technische Universität Wien. https://doi.org/10.34726/hss.2018.60228 (reposiTUm) | |
Diploma and Master Theses (authored and supervised)
2. | Stampfer, B. (2016). Trap Assisted Tunneling and Band Interaction Using the Non-Radiative Multi Phonon Model Technische Universität Wien. https://doi.org/10.34726/hss.2016.35327 (reposiTUm) | |
1. | Grill, A. (2013). A Framework for Simulation and Parameter Optimization of a 90nm CMOS Process in Sentaurus Technische Universität Wien. (reposiTUm) | |