Staff Person Publications

Publications Predrag Habas

25 records

Publications in Scientific Journals

9.		D. Pogany, N. Seliger, T. Lalinsky, J. Kuzmik, P. Habas, P. Hrkut, E. Gornik: "Study of Thermal Effects in GaAs Micromachined Power Sensor Microsystems by an Optical Interferometer Technique"; Microelectronics Journal, 29 (1998), 191 - 198. https://doi.org/10.1016/S0026-2692(97)00057-8

8.		N. Seliger, D. Pogany, C. Fürböck, P. Habas, E. Gornik, M. Stoisiek: "A Laser Beam Method for Evaluation of Thermal Time Constant in Smart Power Devices"; Microelectronics Reliability, 37 (1997), 1727 - 1730. https://doi.org/10.1016/S0026-2714(97)00149-2

7.		N. Seliger, P. Habas, D. Pogany, E. Gornik: "Time-Resolved Analysis of Self-Heating in Power VDMOSFETs Using Backside Laserprobing"; Solid-State Electronics, 41 (1997), 1285 - 1292. https://doi.org/10.1016/S0038-1101(97)00131-7

6.		N. Seliger, P. Habas, E. Gornik: "A Study of Backside Laser-Probe Signals in MOSFETs"; Microelectronic Engineering, 31 (1996), 87 - 94. https://doi.org/10.1016/0167-9317(95)00329-0

5.		P. Habas: "The Application of Charge-Pumping Technique to Characterize the Si/Si02 Interface in Power VDMOSFETs"; Microelectronic Engineering, 28 (1995), 1-4; 171 - 174. https://doi.org/10.1016/0167-9317(95)00038-A

4.		P. Habas, J. Faricelli: "Investigation of the Physical Modeling of the Gate-Depletion Effect"; IEEE Transactions on Electron Devices, 39 (1992), 6; 1496 - 1500. https://doi.org/10.1109/16.137331

3.		P. Habas: "A Physics Based Analytical MOSFET Model with Accurate Field Dependent Mobility"; Solid-State Electronics, 33 (1990), 7; 923 - 933. https://doi.org/10.1016/0038-1101(90)90074-O

2.		P. Habas, S. Selberherr: "Impact of the Non-Degenerate Gate Effect on the Performance of Submicron MOS-Devices"; Informacije Midem - Journal of Microelectronics Electronic Components and Materials, 20 (1990), 4; 185 - 188.

1.		P. Habas, S. Selberherr: "On the Effect of Non-Degenerate Doping of Polysilicon Gate in Thin Oxide MOS-Devices - Analytical Modeling"; Solid-State Electronics, 33 (1990), 12; 1539 - 1544. https://doi.org/10.1016/0038-1101(90)90134-Z

Talks and Poster Presentations (with Proceedings-Entry)

14.		N. Seliger, D. Pogany, C. Fürböck, P. Habas, E. Gornik, M. Stoisiek: "A study of temperature distribution in SOI-smart power devices in transient conditions by optical interferometry"; Talk: European Solid-State Device Research Conference (ESSDERC), Stuttgart; 1997-09-01; in: "Proc. ESSDERC ´97", (1997), 512 - 515.

13.		P. Habas, G. Groeseneken, G. Van den Bosch, H.E. Maes, E. Gornik: "Detailed Study of the Parasitic Geometric Current Component in Charge Pumping Measurements"; Talk: Semiconductor Interface Specialists Conference, Charleston; 1997-12-01; in: "Proc. of Semiconductor Interface Specialists Conf.", (1997), 1.

12.		D. Pogany, C. Fürböck, N. Seliger, P. Habas, E. Gornik, S. Kubicek, S. Decoutere: "Optical testing of submicron-technology MOSFET`s and bipolar transistors"; Talk: European Solid-State Device Research Conference (ESSDERC), Stuttgart; 1997-09-01; in: "Proc. ESSDERC ´97", (1997), 372 - 375.

11.		N. Seliger, P. Habas, A. Köck, D. Pogany, E. Gornik: "Backside-laser probing of transient heating in power VDMOSFET´s"; Talk: International Conference on Physics of Semiconductor (ICPS), Berlin; 1996-07-21; in: "Proc. ISPS ´96", (1996), 115 - 122.

10.		D. Pogany, T. Lalinsky, N. Seliger, J. Kuzmik, P. Habas, P. Hrkut, E. Gornik: "Power sensor microsystems characterization using a contactless optical laser method"; Talk: International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM), Boston; 1996-07-01; in: "Proc. of ASDAM ´96", (1996), 201 - 204.

9.		P. Habas: "Physics and Modeling in Concerning Hot-Carrier Degradation in MOSFETs"; Talk: Conference on Microelectronics and Optoelectronics, Nis (invited); 1993-10-26 - 1993-10-28; in: "Proceedings Conference on Microelectronics and Optoelectronics", (1993), 179 - 188.

8.		P. Habas, S. Selberherr: "A Closed-Loop Extraction of the Spatial Distribution of Interface Traps Based on Numerical Model of the Charge-Pumping Experiment"; Poster: Solid State Devices and Materials Conference (SSDM), Tsukuba; 1992-08-26 - 1992-08-28; in: "Proceedings SSDM 92 Conference", (1992), 170 - 172.

7.		O. Heinreichsberger, P. Habas, S. Selberherr: "Analysis of Geometric Charge-Pumping Components in a Thin-Film SOI Device"; Talk: European Solid-State Device Research Conference (ESSDERC), Leuven; 1992-09-14 - 1992-09-17; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1992), ISBN: 0-444-89478-0; 819 - 822. https://doi.org/10.1016/0167-9317(92)90552-3

6.		P. Habas, O. Heinreichsberger, S. Selberherr: "Analysis of the Degradation of n-channel LDD MOSFETs by Numerical Simulation of the Carge-Pumping Experiment"; Talk: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Peking; 1992-10-18 - 1992-10-24; in: "Proceedings Solid State and Integrated Circuit Technology 92 Conference", (1992), 691 - 693.

5.		P. Grubmair, P. Habas, O. Heinreichsberger, H. Kosina, C. Sala, S. Selberherr: "Recent Advances in Device Simulation at the TU-Vienna"; Talk: International Semiconductor Conference (CAS), Sinaia (invited); 1992-10-06 - 1992-10-11; in: "Proceedings CAS 92 Conference", (1992), 347 - 358.

4.		P. Habas, O. Heinreichsberger, S. Selberherr: "Transient Two-Dimensional Numerical Analysis of the Charge-Pumping Experiment"; Talk: European Solid-State Device Research Conference (ESSDERC), Leuven; 1992-09-14 - 1992-09-17; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1992), ISBN: 0-444-89478-0; 687 - 690. https://doi.org/10.1016/0167-9317(92)90522-S

3.		P. Habas, A. Lugbauer, S. Selberherr: "Two-Dimensional Numerical Modeling of Interband Tunneling Accounting for Nonuniform Electric Field"; Talk: International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (NUPAD), Seattle; 1992-05-31 - 1992-06-01; in: "Proceedings NUPAD IV", (1992), ISBN: 0-7803-0516-7; 135 - 140.

2.		P. Habas, S. Selberherr: "Numerical Simulation of MOS-Devices with Non-Degenerate Gate"; Talk: European Solid-State Device Research Conference (ESSDERC), Nottingham; 1990-09-10 - 1990-09-13; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1990), ISBN: 0-7503-0065-5; 161 - 164.

1.		O. Heinreichsberger, P. Habas, P. Lindorfer, G. Mayer, S. Selberherr, M. Stiftinger: "Neuere Entwicklungen bei MINIMOS"; Talk: Workshop Numerische Simulation für Technologieentwicklung (NuTech), Bad Tölz; 1989-08-02 - 1989-08-03; in: "Proceedings NuTech 89", (1989), 7.

Doctor's Theses (authored and supervised)

1.		P. Habas: "Analysis of Physical Effects in Small Silicon MOS Devices"; Supervisor, Reviewer: S. Selberherr, E. Gornik; Institut für Mikroelektronik, 1993; oral examination: 1993-11-17.

Diploma and Master Theses (authored and supervised)

1.		P. Habas: "The Application of Charge-Pumping Technique to Characterize the Si/Si02 Interface in Power VDMOSFETs"; Talk: International Conference on Insulating Films on Semiconductors (INFOS), Villard-de-Lans; 1995-06-07 - 1995-06-10.