Publications Gerhard Hobler

196 records

Publications in Scientific Journals

82.   Balden, M., Schlueter, K., Dhard, D., Bauer, P., Nilsson, R., Granberg, F., Nordlund, K., Hobler, G. (2023).
Crystal-Orientation-Dependent Physical Sputtering From Four Elemental Metals.
Nuclear Materials and Energy, 37, Article 101559. https://doi.org/10.1016/j.nme.2023.101559 (reposiTUm)

81.   Titze, M., Poplawsky, J. D., Kretschmer, S., Krasheninnikov, A. V., Doyle, B. L., Bielejec, E. S., Hobler, G., Belianinov, A. (2023).
Measurement and Simulation of Ultra-Low-Energy Ion–Solid Interaction Dynamics.
Micromachines, 14(10), 1884. https://doi.org/10.3390/mi14101884 (reposiTUm)

80.   Wilhelm, R. A., Deuzeman, M. J., Rai, S., Husinsky, W., Szabo, P. S., Biber, H. A., Stadlmayr, R., Cupak, C., Hundsbichler, J., Lemell, C., Möller, W., Mutzke, A., Hobler, G., Versolato, O. O., Aumayr, F., Hoekstra, R. (2023).
On the Missing Single Collision Peak in Low Energy Heavy Ion Scattering.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 544, Article 165123. https://doi.org/10.1016/j.nimb.2023.165123 (reposiTUm)

79.   Höflich, K., Hobler, G., Allen, F. I., Wirtz, T., Rius, G., McElwee-White, L., Krasheninnikov, A. V., Schmidt, M., Utke, I., Klingner, N., Osenberg, M., Córdoba, R., Djurabekova, F., Manke, I., Moll, P., Manoccio, M., De Teresa, J. M., Bischoff, L., Michler, J., … Hlawacek, G. (2023).
Roadmap for Focused Ion Beam Technologies.
Applied Physics Reviews, 10(4), 1–93. https://doi.org/10.1063/5.0162597 (reposiTUm)

78.   Bradley, R. M., Hobler, G. (2023).
Sputter Yields of Surfaces With Nanoscale Textures: Analytical Results and Monte Carlo Simulations.
Journal of Applied Physics, 133(6), 065303. https://doi.org/10.1063/5.0137324 (reposiTUm)

77.   Bradley, R. M., Hobler, G. (2021).
Second Order Corrections to the Sputter Yield of a Curved Surface.
Journal of Applied Physics, 129(19), 194301. https://doi.org/10.1063/5.0047520 (reposiTUm)

76.   Schlueter, K., Nordlund, K., Hobler, G., Balden, M., Granberg, F., Flinck, O., da Silva, T. F., Neu, R. (2020).
Absence of a Crystal Direction Regime in Which Sputtering Corresponds to Amorphous Material.
Physical Review Letters, 125(225502). https://doi.org/10.1103/physrevlett.125.225502 (reposiTUm)

75.   Hobler, G., Nordlund, K. (2019).
Channeling Maps for Si Ions in Si: Assessing the Binary Collision Approximation.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 449, 17–21. https://doi.org/10.1016/j.nimb.2019.04.029 (reposiTUm)

74.   Hobler, G., Maciążek, D., Postawa, Z. (2019).
Ion Bombardment Induced Atom Redistribution in Amorphous Targets: MD Versus BCA.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 447, 30–33. https://doi.org/10.1016/j.nimb.2019.03.028 (reposiTUm)

73.   Hobler, G., Maciążek, D., Postawa, Z. (2018).
Crater Function Moments: Role of Implanted Noble Gas Atoms.
Physical Review B, 97(155307). https://doi.org/10.1103/physrevb.97.155307 (reposiTUm)

72.   Nordlund, K., Hobler, G. (2018).
Dependence of Ion Channeling on Relative Atomic Number in Compounds.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 435, 61–69. https://doi.org/10.1016/j.nimb.2017.11.020 (reposiTUm)

71.   Urbassek, H. M., Nietiadi, M. L., Bradley, R. M., Hobler, G. (2018).
Sputtering of SicGe₁₋c Nanospheres.
Physical Review B, 97(155408). https://doi.org/10.1103/physrevb.97.155408 (reposiTUm)

70.   Lindsey, S. J., Hobler, G., Maciążek, D., Postawa, Z. (2017).
Simple Model of Surface Roughness for Binary Collision Sputtering Simulations.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 393, 17–21. https://doi.org/10.1016/j.nimb.2016.09.028 (reposiTUm)

69.   Nordlund, K., Djurabekova, F., Hobler, G. (2016).
Large Fraction of Crystal Directions Leads to Ion Channeling.
Physical Review B, 94(214109). https://doi.org/10.1103/physrevb.94.214109 (reposiTUm)

68.   Hobler, G., Bradley, R. M., Urbassek, H. M. (2016).
Probing the Limitations of Sigmund’s Model of Spatially Resolved Sputtering Using Monte Carlo Simulations.
Physical Review B, 93(205443). https://doi.org/10.1103/physrevb.93.205443 (reposiTUm)

67.   Hobler, G., Nietiadi, M., Bradley, R. M., Urbassek, H. M. (2016).
Sputtering of Silicon Membranes With Nanoscale Thickness.
Journal of Applied Physics, 119, 245105. (reposiTUm)

66.   Hobler, G. (2015).
Combined Binary Collision and Continuum Mechanics Model Applied to Focused Ion Beam Milling of a Silicon Membrane.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 352, 22–26. (reposiTUm)

65.   Lindsey, S., Waid, S., Hobler, G., Wanzenböck, H. D., Bertagnolli, E. (2014).
Inverse Modeling of FIB Milling by Dose Profile Optimization.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 341, 77–83. https://doi.org/10.1016/j.nimb.2014.09.006 (reposiTUm)

64.   Hobler, G. (2013).
Assessment of Surface Potential Models by Molecular Dynamics Simulations of Atom Ejection From (100)-Si Surfaces.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 303, 165–169. (reposiTUm)

63.   Lindsey, S., Hobler, G. (2013).
Sputtering of Silicon at Glancing Incidence.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 303, 142–147. https://doi.org/10.1016/j.nimb.2012.12.087 (reposiTUm)

62.   Kim, H.-B., Hobler, G., Steiger, A., Lugstein, A., Bertagnolli, E., Platzgummer, E., Loeschner, H. (2012).
Sputter-Redeposition Method for the Fabrication of Automatically Sealed Micro/Nanochannel Using FIBs.
International Journal of Precision Engineering and Manufacturing, 12(5), 893–898. https://doi.org/10.1007/s12541-011-0119-3 (reposiTUm)

61.   Lindsey, S., Hobler, G. (2012).
The Significance of Redeposition and Backscattering in Nanostructure Formation by Focused Ion Beams.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 282, 12–16. https://doi.org/10.1016/j.nimb.2011.08.051 (reposiTUm)

60.   Hobler, G., Kovač, D. (2011).
Dynamic Binary Collision Simulation of Focused Ion Beam Milling of Deep Trenches.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 269(14), 1609–1613. https://doi.org/10.1016/j.nimb.2010.12.076 (reposiTUm)

59.   Ebm, C., Hobler, G., Waid, S., Wanzenboeck, H. D. (2011).
Quantitative Simulation of Ion-Beam Induced Deposition of Nanostructures.
Journal of Vacuum Science, Technology B, 29(1), 011031. https://doi.org/10.1116/1.3533951 (reposiTUm)

58.   Budil, M., Hobler, G. (2011).
Topography Simulation of Sputtering Using an Algorithm With Second Order Approximation in Space.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 269(14), 1614–1618. https://doi.org/10.1016/j.nimb.2010.11.010 (reposiTUm)

57.   Ebm, C., Hobler, G., Waid, S., Wanzenboeck, H. D. (2010).
Modeling of Precursor Coverage in Ion-Beam Induced Etching and Verification With Experiments Using XeF2 on SiO2.
Journal of Vacuum Science, Technology B, 28(5), 946–951. https://doi.org/10.1116/1.3481139 (reposiTUm)

56.   Kovač, D., Hobler, G. (2009).
Amorphous Pocket Model Based on the Modified Heat Transport Equation and Local Lattice Collapse.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 267(8–9), 1229–1231. https://doi.org/10.1016/j.nimb.2009.01.032 (reposiTUm)

55.   Ebm, C., Hobler, G. (2009).
Assessment of Approximations for Efficient Topography Simulation of Ion Beam Processes: 10 keV Ar on Si.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 267(18), 2987–2990. https://doi.org/10.1016/j.nimb.2009.06.014 (reposiTUm)

54.   Ebm, C., Platzgummer, E., Löschner, H., Eder-Kapl, S., Jöchl, P., Kümmel, M., Reitinger, R., Hobler, G., Köck, A., Hainberger, R., Wellenzohn, M., Letzkus, F., Irmscher, M. (2009).
Ion Multibeam Nanopatterning for Photonic Applications: Experiments and Simulations, Including Study of Precursor Gas Induced Etching and Deposition.
Journal of Vacuum Science, Technology B, 27(6), 2668–2673. (reposiTUm)

53.   Otto, G., Hobler, G., Palmetshofer, L., Pongratz, P. (2007).
Amorphous Pockets in Si: Comparison of Coupled Molecular Dynamics and TEM Image Contrast Simulations With Experimental Results.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 255(1), 105–109. (reposiTUm)

52.   Kim, H.-B., Hobler, G., Steiger-Thirsfeld, A., Lugstein, A., Bertagnolli, E. (2007).
Full Three-Dimensional Simulation of Focused Ion Beam Micro/Nanofabrication.
Nanotechnology, 18, 2453031–2453038. (reposiTUm)

51.   MoberlyChan, W. J., Adams, D. P., Aziz, M. J., Hobler, G., Schenkel, T. (2007).
Fundamentals of Focused Ion Beam Nanostructural Processing: Below, At, and Above the Surface.
MRS Bulletin, 32, 424–432. (reposiTUm)

50.   Kim, H.-B., Hobler, G. (2007).
Ion Beam Induced Micro/Nano Fabrication: Modeling.
Journal of the Korean Society for Precision Engineering, 24(8), 108–115. (reposiTUm)

49.   Kim, H.-B., Hobler, G. (2007).
Ion Beam Induced Micro/Nano Fabrication: Shape Fabrication.
Journal of the Korean Society for Precision Engineering, 24(10), 109–116. (reposiTUm)

48.   Kim, H.-B., Hobler, G., Steiger-Thirsfeld, A., Lugstein, A., Bertagnolli, E. (2007).
Level Set Approach for the Simulation of Focused Ion Beam Processing on the Micro/Nano Scale.
Nanotechnology, 18, 2653071–2653076. (reposiTUm)

47.   Rong, Z., Gao, F., Weber, W. J., Hobler, G. (2007).
Monte Carlo Simulations of Defect Recovery Within a 10 keV Collision Cascade in 3c-SiC.
Journal of Applied Physics, 102, 1035081–1035087. (reposiTUm)

46.   Kim, H.-B., Hobler, G., Lugstein, A., Bertagnolli, E. (2007).
Simulation of Ion Beam Induced Micro/Nano Fabrication.
Journal of Micromechanics and Microengineering, 17(6), 1178–1183. https://doi.org/10.1088/0960-1317/17/6/011 (reposiTUm)

45.   Kim, H.-B., Hobler, G., Steiger-Thirsfeld, A., Lugstein, A., Bertagnolli, E. (2007).
Simulation-Based Approach for the Accurate Fabrication of Blazed Grating Sturctures by FIB.
Optics Express, 15(15), 9444–9449. (reposiTUm)

44.   Otto, G., Hobler, G., Palmetshofer, L., Mayerhofer, K. E., Piplits, K., Hutter, H. (2006).
Dose-Rate Dependence of Damage Formation in Si by N Implantation as Determined From Channeling Profile Measurements.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 242, 667–669. (reposiTUm)

43.   Moutanabbir, O., Terreault, B., Chicoine, M., Simpson, J., Zahel, T., Hobler, G. (2006).
Hydrogen/Deuterium-Defect Complexes Involved in the Ion Cutting of Si (0 0 1) at the Sub-100 Nm Scale.
Physica B: Condensed Matter, 376, 36–40. (reposiTUm)

42.   Kovac, D., Hobler, G. (2006).
Investigation of the Impact of Defect Models on Monte Carlo Simulations of RBS/C Spectra.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 249, 776–779. (reposiTUm)

41.   Otto, G., Hobler, G., Pongratz, P., Palmetshofer, L. (2006).
Is There an Influence of Ion-Beam-Induced Interfacial Amorphization on the a/C-Interface Depth in Silicon at Common Implantation Energies?
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 253(1–2), 227–231. https://doi.org/10.1016/j.nimb.2006.10.031 (reposiTUm)

40.   Hobler, G., Bourdelle, K. K., Akatsu, T. (2006).
Random and Channeling Stopping Power of H in Si Below 100keV.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 242, 617–619. (reposiTUm)

39.   Hobler, G., Kresse, G. (2005).
Ab Initio Calculations of the Interaction Between Native Point Defects in Silicon.
Materials Science and Engineering: B, 124–125, 368–371. (reposiTUm)

38.  G. Otto, D. Kovac, G. Hobler:
"Coupled BC/kLMC simulations of the temperature dependence of implant damage formation in silicon";
Nuclear Instruments & Methods B, 228 (2005), 256 - 259.

37.  D. Kovac, G. Otto, G. Hobler:
"Modeling of amorphous pocket formation in silicon by numerical solution of the heat transport equation";
Nuclear Instruments & Methods B, 228 (2005), 226 - 229.

36.  G. Hobler, G. Otto, D. Kovac, L. Palmetshofer, K. Mayerhofer, K. Piplits:
"Multiscale approach for the analysis of channeling profile measurements of ion implantation damage";
Nuclear Instruments & Methods B, 228 (2005), 360 - 363.

35.   Mayerhofer, K. E., Foisner, J., Piplits, K., Hobler, G., Palmetshofer, L., Hutter, H. (2005).
Range Evaluation in SIMS Depth Profiles of Er - Implantations in Silicon.
Applied Surface Science, 252(1), 271–277. (reposiTUm)

34.  G. Hobler, G. Otto:
"Amorphous pocket model for silicon based on molecular dynamics simulations";
Nuclear Instruments & Methods B, 206 (2003), 81 - 84.

33.  G. Otto, G. Hobler, K. Gärtner:
"Defect characterization of low-energy recoil events in silicon using classical molecular dynamics simulation";
Nuclear Instruments & Methods B, 202 (2003), 114 - 119.

32.  A. Lugstein, W. Brezna, G. Hobler, E. Bertagnolli:
"Method to characterize the three-dimensional distribution of focused ion beam induced damage in silicon after 50 keV Ga+ irradiation";
Journal of Vacuum Science & Technology A, 21 (2003), 5; 1644 - 1648.

31.  G. Hobler, G. Otto:
"Status and open problems in modeling of as-implanted damage in silicon";
Materials Science in Semiconductor Processing, 6 (2003), 1 - 14.

30.  A. Lugstein, B. Basnar, G. Hobler, E. Bertagnolli:
"Current density profile extraction of focused ion beams based on atomic force microscopy contour profiling of nanodots";
Journal of Applied Physics, 92 (2002), 7; 4037 - 4042.

29.  W. Boxleitner, G. Hobler:
"FIBSIM -- Dynamic Monte Carlo simulation of compositional and topography changes caused by focused ion beam milling";
Nuclear Instruments & Methods B, 180 (2001), 125.

28.  G. Hobler, G. Betz:
"On the useful range of application of molecular dynamics simulations in the recoil interaction approximation";
Nuclear Instruments & Methods B, 180 (2001), 203.

27.  L. Palmetshofer, M. Gritsch, G. Hobler:
"Range of ion-implanted rare earth elements in Si and SiO2";
Materials Science and Engineering B, B 81 (2001), 83.

26.  W. Boxleitner, G. Hobler, V. Klüppel, H. Cerva:
"Simulation of topography evolution and damage formation in TEM sample preparation using focused ion beams";
Nuclear Instruments & Methods B, 175-177 (2001), 102.

25.  G. Hobler, L. Pelaz, C.S. Rafferty:
"Dose, energy, and ion species dependence of the effective plus-factor for transient enhanced diffusion";
Journal of the Electrochemical Society, 147 (2000), 3494 - 3501.

24.  H.-H. Vuong, Y. Xie, M. Frei, G. Hobler, L. Pelaz, C.S. Rafferty:
"Use of transient enhanced diffusion to tailor boron out-diffusion";
IEEE Transactions on Electron Devices, 47 (2000), 1401 - 1405.

23.  G. Hobler, J. Bevk, A. Agarwal:
"Channeling of low-energy implanted ions through the poly-Si gate";
IEEE Electron Device Letters, 20 (7) (1999), 357 - 359.

22.  G. Hobler, L. Pelaz, C.S. Rafferty:
"Continuum treatment of spatial correlation in damage annealing";
Nuclear Instruments & Methods B, 153 (1999), 172 - 176.

21.  L. Pelaz, G.H. Gilmer, M. Jaraiz, S.B. Herner, H.-J. Gossmann, D.J. Eaglesham, G. Hobler, C.S. Rafferty, J. Barbolla:
"Modeling of the ion mass effect on transient enhanced diffusion: deviation from the "+1" model";
Applied Physics Letters, 73(10) (1998), 1421 - 1423.

20.  R. von Criegern, F. Jahnel, R. Lange-Gieseler, P. Pearson, G. Hobler, A. Simionescu:
"Vertification of "lateral second. ion mass spectrom." as method for measuring lateral dopant dose distr. in me test str.";
Journal of Vacuum Science & Technology B, B 16(1) (1998), 386 - 393.

19.  G. Hobler, G. Fehlmann:
"A study of ultra-shallow implanted dopant profiles in silicon using BC and MD simulations";
Radiation Effects and Deffects in Solids, 141 (1997), 113 - 125.

18.  A.Y. Nikulin, A.W. Stevenson, H. Hashizume, D. Cookson, G. Hobler, S.W. Wilkins:
"Model-Independent determination of 2D strain distribution in ion implanted silicon crystals from x-ray diffraction data";
Semiconductor Science and Technology, 12(3) (1997), 350 - 354.

17.  J. Esfandyari, Ch. Schmeiser, S. Senkader, G. Hobler, B. Murphy:
"Computer simulation of oxygen precipitation in Cz-grown silicon during HI-LO-HI anneals";
Journal of the Electrochemical Society, 143(3) (1996), 995 - 1001.

16.  G. Hobler:
"Critical angles and low-energy limits to ion channeling in silicon";
Radiation Effects and Deffects in Solids, 139 (1996), 21 - 85.

15.  S. Senkader, G. Hobler, Ch. Schmeiser:
"Determination of the oxide precipitate-silicon matrix interface energy by consid. the change oft precipitate morphology";
Applied Physics Letters, 69(15) (1996), 2202 - 2204.

14.  G. Hobler:
"Theoretical estimate of the low-energy limit to ion channeling";
Nuclear Instruments & Methods B, 115 (1996), 323 - 327.

13.  G. Hobler, A. Simionescu, L. Palmetshofer, F. Jahnel, R. von Criegern, C. Tian, G. Stingeder:
"Vertification of models for the simulation of boron implantation into crystalline silicon";
Journal of Vacuum Science & Technology B, B 14(1) (1996), 272 - 277.

12.  S. Senkader, J. Esfandyari, G. Hobler:
"A model for oxygen precipitation in silicon including bulk stacking fault growth";
Journal of Applied Physics, 78(11) (1995), 6469 - 6476.

11.  G. Hobler, A. Simionescu:
"Acceleration of binary collision simulations in crystalline targets using critical angles for ion channeling";
Nuclear Instruments & Methods B, 102 (1995), 24 - 28.

10.  G. Hobler, A. Simionescu, L. Palmetshofer, C. Tian, G. Stingeder:
"Boron channeling implantations in silicon: Modeling of electronic stopping and damage accumulation";
Journal of Applied Physics, 77(8) (1995), 3697 - 3703.

9.  K. Ghaderi, G. Hobler, M. Budil, L. Mader, H.J. Schulze:
"Determination of silicon point defect parameters and reaction barrier energies from gold diffusion experiments";
Journal of Applied Physics, 77(3) (1995), 1320 - 1322.

8.  A. Simionescu, G. Hobler, S. Bogen, L. Frey, H. Ryssel:
"Model for the electronic stopping of channeled ions in silicon around the stopping power maximum";
Nuclear Instruments & Methods B, 106 (1995), 47 - 50.

7.  A. Simionescu, S. Herzog, G. Hobler, R. Schork, J. Lorenz, C. Tian, G. Stingeder:
"Modeling of electronic stopping and damage accumulation during arsenic implantation in silicon";
Nuclear Instruments & Methods B, 100 (1995), 483 - 489.

6.  G. Hobler:
"Monte Carlo simulation of two-dimensional implanted dopant distributions at mask edges";
Nuclear Instruments & Methods B, 96 (1995), 155 - 162.

5.  K. Gärtner, D. Stock, B. Weber, G. Betz, M. Hautala, G. Hobler, M. Hou, S. Sarite, W. Eckstein, J.J. Jimenez-Rodriguez, A.M.C. Perez-Martin, E.T. Andribet, V. Konoplev, A. Gras-Marti, M. Posselt, M.H. Shapiro, T.A. Tombrello, H.M. Urbassek, H. Hensel, Y. Yamamura, W. Takeuchi:
"Round robin computer simulation of ion transmission through thin crystalline layers";
Nuclear Instruments & Methods B, 102 (1995), 183 - 197.

4.  K. Ghaderi, G. Hobler:
"Simulation of phosphorus diffusion in silicon using a pair diffusion model with a reduced number of parameters";
Journal of the Electrochemical Society, 142 (1995), 1654 - 1658.

3.   Hobler, G., Selberherr, S. (1989).
Monte Carlo Simulation of Ion Implantation Into Two- And Three-Dimensional Structures.
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 8(5), 450–459. https://doi.org/10.1109/43.24873 (reposiTUm)

2.   Hobler, G., Selberherr, S. (1988).
Two-Dimensional Modeling of Ion Implantation Induced Point Defects.
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 7(2), 174–180. https://doi.org/10.1109/43.3147 (reposiTUm)

1.   Hobler, G., Langer, E., Selberherr, S. (1987).
Two-Dimensional Modeling of Ion Implantation With Spatial Moments.
Solid-State Electronics, 30(4), 445–455. https://doi.org/10.1016/0038-1101(87)90175-4 (reposiTUm)

Contributions to Books

2.   Kim, H. B., Hobler, G. (2012).
Simulation of Focused Ion Beam Milling.
In I. Utke, S. Moshkalev, Ph. St. J. Russell (Eds.), Nanofabrication Using Focused Ion and Electron Beam (pp. 226–247). Oxford University Press. (reposiTUm)

1.   Rüdenauer, F., Hobler, G., Mitterauer, J., Koops, H. W. P., Palmetshofer, L., Bluhm, H. (2008).
Ion Beam Devices for Material Processing and Analysis.
In Vacuum Electronics, Components and Devices (pp. 231–263). Springer. (reposiTUm)

Talks and Poster Presentations (with Proceedings-Entry)

47.   Tabean, S., Mousley, M., Hobler, G., De Castro, O., Wirtz, T., Eswara, S. (2023).
Analyses of Contrast in keV Scanning Transmission Helium Ion Microscopy.
In IUMRS-ICAM, ICMAT2023 Programme E-Guide, Singapore, Singapore. (reposiTUm)

46.   Höflich, K., Hobler, G., Allen, F., Wirtz, T., Rius, G., Hlawacek, G. (2023).
IB-ThP-2 Roadmap for Focused Ion Beam Technologies.
In AVS 69th International Symposium, Exhibition: Abstract Book (p. 190), Portland, United States. (reposiTUm)

45.   Hobler, G., Bradley, R. (2023).
Sputtering From Sinusoidal Surfaces: Monte Carlo Simulations and Comparison to Analytical Results.
In SKM 2023 - scientific programme, Dresden, Germany. (reposiTUm)

44.   Current, M., Hobler, G., Kawasaki, Y. (2019).
Aspects of Highly-Channeled MeV Implants of Dopants in Si(100).
In 19th International Workshop on Junction Technology 2019 (pp. 40–45), Kyoto, Japan. (reposiTUm)

43.   Current, M., Hobler, G., Kawasaki, Y., Sugitani, M. (2018).
Channeled MeV B, P and as Profiles in Si(100): Monte-Carlo Models and SIMS.
In 22nd International Conference on Ion Implantation Technology (pp. 251–254), Würzburg. (reposiTUm)

42.   Hobler, G., Nordlund, K., Current, M., Schustereder, W. (2018).
Simulation Study of Al Channeling in 4h-SiC.
In 22nd International Conference on Ion Implantation Technology (pp. 247–250), Würzburg. (reposiTUm)

41.   Hobler, G., Maciazek, D., Postawa, Z., Bradley, R. (2017).
Crater Function Moments: The Influence of Implanted Noble Gas Atoms.
In Book of Abstracts (p. 33), Krakow, Polen. (reposiTUm)

40.   Hobler, G., Bradley, R., Urbassek, H. (2015).
Testing Sigmund's Model of Sputtering.
In Book of Abstracts (p. 7), Krakow, Polen. (reposiTUm)

39.   Waid, S., Wanzenböck, H., Hobler, G., Zahel, T., Bertagnolli, E., Mühlberger, M., Schöftner, R. (2010).
Topography Extraction of 3d Structures Through Afm of Nanoimprints.
In 9th International Conference on Nanoimprint and Nanoprint, Kopenhagen. (reposiTUm)

38.   Ebm, C., Hobler, G. (2009).
Simulation of Ion-Beam Induced Etching and Deposition Using a Non-Local Recoil-Based Algorithm.
In MRS online Proceedings library (p. 6), San Francisco. (reposiTUm)

37.   Hobler, G., Kim, H. (2008).
3D FIB Process Simulation for Photonic Applications.
In Proceedings of the First International Workshop on FIB for Photonics (pp. 8–11), Eindhoven, the Netherlands. (reposiTUm)

36.   Zahel, T., Hobler, G., Bourdelle, K. (2008).
Investigation of Defect Evolution During Hydrogen Implantation Using Kinetic Monte Carlo Simulations.
In Abstracts, Strasbourg, France. (reposiTUm)

35.   Kim, H., Hobler, G., Lugstein, A., Bertagnolli, E. (2005).
"AMADEUS" Software for Ion Beam Nano Patterning and Characteristics of Nano Fabrication.
In Proc. 2005 Autumn Conference of the Korean Society of Precision Engineering (pp. 322–325), GangJu, South Korea, Austria. (reposiTUm)

34.   Kim, H., Hobler, G. (2005).
Analysis of Ion Beam-Solid Interactions for Nano Fabrication.
In Proc. 2005 Autumn Conference of the Korean Society of Precision Engineering (pp. 581–584), GangJu, South Korea, Austria. (reposiTUm)

33.   Zahel, T., Otto, G., Hobler, G. (2005).
Atomistic Simulation of Hydrogen Implantation for SOI Wafer Production.
In EUROSOI 2005, Book of Abstracts (pp. 35–36), Granadea, Spanien, Austria. (reposiTUm)

32.   Zahel, T., Otto, G., Hobler, G. (2005).
Atomistic Simulation of the Isotope Effect on Defect Formation in H/D-Implanted Si.
In Silicon-on-Insulator Technology and Devices XI (pp. 179–184), Quebec City, Canada, Austria. (reposiTUm)

31.   Terreault, B., Chicoine, M., Desrosiers, N., Giguere, A., Hobler, G., Moutanabbir, O., Ross, G., Schiettekatte, F., Simpson, P., Zahel, T. (2005).
Isotope Effects in Low-Energy Ion-Induced Splitting.
In Silicon-on-Insulator Technology and Devices XII (pp. 155–166), Quebec City, Canada, Austria. (reposiTUm)

30.  G. Otto, G. Hobler:
"Coupled kinetic Monte Carlo and molecular dynamics simulations of implant damage accumulation in silicon";
Poster: Materials Research Society Fall Meeting (MRS), Boston/MA, USA; 2003-12-01 - 2003-12-05; in: "Proceedings of MRS Fall Meeting 2003", (2004), 1 - 6.

29.   Hobler, G. (2004).
Simulation of Focused Ion Beam Milling.
In Proc. 5th Int. Symp. MEMS and Nanotechnology (pp. 46–51), Costa Mesa, CA, Austria. (reposiTUm)

28.  G. Hobler, A. Lugstein, W. Brezna, E. Bertagnolli:
"Simulation of focused ion beam induced damage formation in crystalline silicon";
Poster: Materials Research Society Fall Meeting (MRS), Boston/MA, USA; 2003-12-01 - 2003-12-05; in: "Proceedings of MRS Fall Meeting 2003", (2004), 6 pages.

27.  G. Hobler, V. Moroz:
"Initial conditions for transient enhanced diffusion: Beyond the plus-factor approach";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 2001-09-05 - 2001-09-07; in: "Initial conditions for transient enhanced diffusion: Beyond the plus-factor approach", Springer, (2001), 34 - 37.

26.  G. Hobler, V. Moroz:
"Simple formulae for the effective plus-factor for transient enhanced diffusion";
Talk: European Solid-State Device Research Conference (ESSDERC), Cork, Ireland; 2000-09-11 - 2000-09-13; in: "ESSDERC 2000", Frontier Group, (2000), 168 - 171.

25.  G. Hobler, C. Murthy:
"Towards a comprehensive model of electronic stopping in amorphous and crystalline silicon";
Talk: 13th Int. Conf. Ion Implantation Technology, Alpbach, Austria; 2000-09-17 - 2000-09-22; in: "In Proceeding 13th Int. Conf. Ion Implantaion Technology,IIT-2000", (2000), 209 - 212.

24.  J. Bevk, G. Hobler, D.C. Jacobson, W.M. Mansfield, J. Jackson:
"Dopant profiles in dual-poly gates with buried ultra-low-energy implants";
Talk: International Conference on Electronic Materials, Charlottesville; 1999-07-01; in: "40th Electronic Materials Conf. Tech. Progr.", (1999), 8.

23.  G. Hobler, L. Pelaz, C.S. Rafferty:
"Dose, energy and ion species dependence of the effective plusfactor for transient enhanced diffusion";
Talk: Process Physics and Modeling in Semiconductor Technology, Pennington; 1999-07-01; in: "Process Physics and Modeling in Semiconductor Technology", The Electrochemical Society, (1999), 75 - 86.

22.  G. Hobler, C.S. Rafferty:
"Modeling of (311) defects";
Talk: MRS Warrendale, Warrendale; 1999-07-01; in: "Mat. Res. Soc. Sym. Proceeding", 568 (1999), 123 - 134.

21.  H.-J. Gossmann, C.S. Rafferty, G. Hobler, H.-H. Vuong, D.C. Jacobson:
"Suppression of reverse short channel effect by a buried carbon layer";
Talk: IEEE Conference, Piscataway; 1999-07-01; in: "IEDM Techn. Dig.", (1999), 725 - 728.

20.  J. Bevk, S. Kuehne, H. Vaidya, W.M. Mansfield, G. Hobler:
"Buried ultra-low-energy gate implants for sub 0.25micron CMOS technology";
Talk: VLSI, Berlin; 1998-07-01; in: "Proceeding Symp. VLSI Technology", (1998), 74 - 75.

19.  G. Hobler, C.S. Rafferty, S. Senkader:
"A model of (311) defect evolution based on nucleation theory";
Talk: IEEE Conference, Piscataway; 1997-07-01; in: "Intl. Conf. Simultation of Semiconductor and Devices", (1997), 73 - 76.

18.  G. Hobler, H.-H. Vuong, J. Bevk, A. Agarwal, H.-J. Gossmann, D.C. Jacobson, M. Foad, A. Murrell, Y. Erokhin:
"Modeling of ultra-low-energy boron implantation in silicon";
Talk: IEEE Conference, Piscataway; 1997-07-01; in: "IEDM Techm. Dig.", (1997), 489 - 492.

17.  R. von Criegern, F. Jahnel, R. Lange-Gieseler, P. Pearson, G. Hobler, A. Simionescu:
"Vertification of "lateral SIMS" ...";
Talk: 4th Int. Workshop on the Measurement..., Berlin; 1997-07-01; in: "Proc. 4th Int. Workshop on the Measurement, Characterization and Modelling...", (1997), 22.1 - 22.11.

16.  S. Senkader, G. Hobler:
"A kinetic model for precipitation of oxygen in silicon";
Talk: NATO ARW, Dordrecht; 1996-07-01; in: "Early Stages of Oxygen-Precipitation in Silicon, NATO ARW Series", Kluwer Academic, (1996), 447 - 454.

15.  S. Senkader, G. Hobler, Ch. Schmeiser:
"Modeling and simultation of oxygen precipitation in Si: Precipitate-point defect interactions and influence of hydrogen";
Talk: IEEE Conference, Piscataway; 1996-07-01; in: "SISPAD`96", (1996), 31 - 32.

14.   Stippel, H., Halama, S., Hobler, G., Wimmer, K., Selberherr, S. (1992).
Adaptive Grid for Monte Carlo Simulation of Ion Implantation.
In Proceedings NUPAD IV (pp. 231–236), Honolulu, Austria. (reposiTUm)

13.  H. Stippel, G. Hobler, S. Selberherr:
"Three-Dimensional Simulation of Ion Implantation";
Talk: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Peking; 1992-10-18 - 1992-10-24; in: "Proceedings Solid State and Integrated Circuit Technology 92 Conference", (1992), 703 - 705.

12.   Halama, S., Hobler, G., Wimmer, K., Selberherr, S. (1991).
Eine Neue Methode Zur Simulation Der Diffusion in Allgemeinen Strukturen.
In Tagungsbericht Seminar Grundlagen und Technologie elektronischer Bauelemente (pp. 20–26), Großarl, Austria. (reposiTUm)

11.   Wimmer, K., Bauer, R., Halama, S., Hobler, G., Selberherr, S. (1991).
Simulation Nichtplanarer Herstellungsprozesse Mit PROMIS.
In Tagungsbericht Seminar Grundlagen und Technologie elektronischer Bauelemente (pp. 10–19), Großarl, Austria. (reposiTUm)

10.   Wimmer, K., Bauer, R., Halama, S., Hobler, G., Selberherr, S. (1991).
Transformation Methods for Nonplanar Process Simulation.
In Proceedings SISDEP 91 (pp. 131–138), Bologna, Austria. (reposiTUm)

9.   Halama, S., Wimmer, K., Hobler, G., Selberherr, S. (1990).
Finite-Differenzen Dreiecksnetzgenerierung Für Die Prozess-Simulation Mit PROMIS.
In Proceedings NuTech (p. 3), Bad Tölz, Austria. (reposiTUm)

8.   Wimmer, K., Bauer, R., Halama, S., Hobler, G., Selberherr, S. (1990).
Prozess-Simulation in Nichtplanaren Strukturen Mit PROMIS.
In Proceedings NuTech (p. 4), Bad Tölz, Austria. (reposiTUm)

7.   Hobler, G., Halama, S., Wimmer, K., Selberherr, S., Pötzl, H. (1990).
RTA-Simulations With the 2-D Process Simulator PROMIS.
In NUPAD III Techn. Digest (pp. 13–14), Honolulu, Austria. (reposiTUm)

6.   Hobler, G., Selberherr, S. (1988).
Monte Carlo Simulation of Ion Implantation Into Two- And Three-Dimensional Structures.
In Proceedings of the International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits, Honolulu, Austria. (reposiTUm)

5.   Hobler, G., Selberherr, S. (1987).
Efficient Two-Dimensional Monte-Carlo Simulation of Ion Implantation.
In Proceedings Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits (pp. 225–230), Dublin, Austria. (reposiTUm)

4.  G. Hobler, S. Selberherr:
"Verification of Ion Implantation Models by Monte-Carlo Simulations";
Talk: European Solid-State Device Research Conference (ESSDERC), Bologna; 1987-09-14 - 1987-09-17; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1987), 445 - 448.

3.  W. Jüngling, G. Hobler, S. Selberherr, H. Pötzl:
"Adaptive Grids in Space and Time for Process and Device Simulators";
Talk: Numerical Grid Generation in Computational Fluid Dynamics Conference, Landshut; 1986-07-14 - 1986-07-17; in: "Numerical Grid Generation in Computational Fluid Dynamics Conf.", (1986), ISBN: 0-906674-58-1; 729 - 739.

2.   Hobler, G., Guerrero, E., Selberherr, S. (1986).
Two-Dimensional Modeling of Ion Implantation Induced Point Defects.
In Proceedings of the International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (pp. 10–11), Honolulu, Austria. (reposiTUm)

1.   Hobler, G., Langer, E., Selberherr, S. (1986).
Two-Dimensional Modeling of Ion-Implantation.
In Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes (pp. 256–270), Bologna, Austria. (reposiTUm)

Talks and Poster Presentations (without Proceedings-Entry)

36.   Hobler, G. (2023, March 28).
IMSIL: Recent Developments and Future Plans
[Presentation]. fit4nano WG2 Meeting, Dresden, Germany. (reposiTUm)

35.   Schlueter, K., Nordlund, K., Balden, M., Silva, T. F., Hobler, G., Neu, R. (2019).
Crystal-Orientation-Dependent Sputtering of Tungsten.
24th International Conference on Ion Beam Analysis (IBA2019), Antibes, Frankreich, EU. (reposiTUm)

34.   Hobler, G., Nordlund, K. (2018).
Channeling Maps: Assessing the Binary Collision Approximation.
International Conference on Simulation of Radiation Effects in Solids, Krakow, Polen, EU. (reposiTUm)

33.   Hobler, G., Maciazek, D., Postawa, Z. (2018).
Ion Bombardment-Induced Atom Redistribution in Amorphous Silicon: MD Versus BCA.
International Conference on Simulation of Radiation Effects in Solids, Krakow, Polen, EU. (reposiTUm)

32.   Nordlund, K., Djurabekova, F., Hobler, G. (2017).
Effect of Atom Sizes in Ionic Compounds on Channeling: Channeling Map Analysis.
International Conference on Radiation Effects in Insulators, Versailles, France, EU. (reposiTUm)

31.   Hobler, G. (2016).
Combined Binary Collision and Continuum Mechanics Model Applied to Focused Ion Beam Milling of a Silicon Membrane.
International Conference on Computer Simulation on Radiation Effects in Solids, Alicante, Spanien, EU. (reposiTUm)

30.   Lindsey, S., Hobler, G., Maciazek, D., Postawa, Z. (2016).
Simple Model of Surface Roughness for Binary Collision Sputtering Simulations.
International Conference on Simulation of Radiation Effects in Solids, Krakow, Polen, EU. (reposiTUm)

29.   Hobler, G., Nietiadi, M., Bradley, R. M., Urbassek, H. M. (2016).
Sputtering of Silicon Membranes With Nanoscale Thickness.
International Conference on Simulation of Radiation Effects in Solids, Krakow, Polen, EU. (reposiTUm)

28.   Wanzenböck, H. D., Waid, S., Hobler, G., Lindsey, S. (2014).
2.5d-Nanoimprint Lithography.
NIL Industrial Day, Linz, Austria. (reposiTUm)

27.   Lindsey, S., Waid, S., Hobler, G., Wanzenböck, H. D., Bertagnolli, E. (2013).
Inverse Modeling of FIB Milling by Dose Profile Optimization.
European Materials Research Society (EMRS), Strasbourg, France, EU. (reposiTUm)

26.   Lindsey, S., Hobler, G. (2013).
Simulation of Glancing Angle Sputtering With a Density Gradient Model to Represent Surface Roughness.
Particle-surface interactions: from surface analysis to materials processing (PASI), Luxemburg, EU. (reposiTUm)

25.   Waid, S., Mika, J., Lindsey, S., Wanzenböck, H. D., Hobler, G., Bertagnolli, E. (2012).
Fabrication of 3D Axon Isolation Channels by Inverse Modelling Assisted Focused Ion Beam Patterning.
Micro- and Nano-Engineering Conference, Vienna, Austria, Austria. (reposiTUm)

24.   Hobler, G. (2012).
Molecular Dynamics Study of Atom Ejection From an Eroding (100)-Si Surface.
International Conference on Simulation of Radiation Effects in Solids, Krakow, Polen, EU. (reposiTUm)

23.   Lindsey, S., Hobler, G. (2012).
Sputtering of Silicon at Glancing Incidence.
International Conference on Simulation of Radiation Effects in Solids, Krakow, Polen, EU. (reposiTUm)

22.   Lindsey, S., Hobler, G. (2011).
The Role/Relevance/Significance/Implications of Redeposition and Backscattering in Focused Ion Beam Milling/Nanostructure Formation by Focused Ion Beams.
E-MRS Spring Meeting, Strasbourg, France, EU. (reposiTUm)

21.   Hobler, G. (2010).
Binary Collision Simulation of Focused Ion Beam Milling of Deep Trenches.
International Conference on Simulation of Radiation Effects in Solids, Krakow, Polen, EU. (reposiTUm)

20.   Hobler, G. (2010).
Simulation of Nanostructuring With Focused Ion Beams.
FIB-Workshop, Wien, Austria. (reposiTUm)

19.   Budil, M., Hobler, G. (2010).
Topography Simulation of Sputtering Using an Algorithm With Second Order Approximation in Space.
International Conference on Simulation of Radiation Effects in Solids, Krakow, Polen, EU. (reposiTUm)

18.   Kovac, D., Hobler, G. (2008).
oeAmorphous Pocket Model Based on the Modified Heat Transport Equation and Local Lattice Collapse.
International Conference on Ion Beam Modification of Materials (IBMM), Taormina, Italy, EU. (reposiTUm)

17.   Ebm, C., Budil, M., Hobler, G. (2008).
oeAssessment of Approximations for Efficient Topography Simulation of Ion Beam Processes: 10 keV Ar on Si.
9th International Conference on Simulation of Radiation Effects in Solids, Beijing, China, Non-EU. (reposiTUm)

16.   Pongratz, P., Otto, G., Hobler, G., Palmetshofer, L. (2007).
Analysis of Experimental TEM Image Contrast of Amorphous Pockets Using Molecular Dynamics Computer Simulations Aof Collision Cascades in Silicon.
ICDS -24, 24th International Conference on Defects in Semiconductors, New Mexico, USA, Non-EU. (reposiTUm)

15.   Otto, G., Hobler, G., Palmetshofer, L., Pongratz, P. (2006).
Comparison of TEM Image Contrast Simulations of Amorphous Pockets in Si as Obtained by Molecular Dynamics Simulations With Experimental Results.
8th Intern. Conf. on Computer Simulation of Radiation Effects in Solids (COSIRES 2006), Richland, Oregon/USA, Non-EU. (reposiTUm)

14.   Hobler, G. (2006).
Simulation Von Topographie- Und Materialmodifikation Mittels Fokussierter Ionenstrahlen.
Seminar Institut für Allgemeine Physik (IAP), TU Wien, Austria. (reposiTUm)

13.   Otto, G., Hobler, G., Palmetshofer, L., Pongratz, P. (2006).
Verification of MD Results on Amorphous Pockets in Si Using TEM Image Contrast Simulations.
8th Intern. Conf. on Computer Simulation of Radiation Effects in Solids (COSIRES 2006), Richland, Oregon/USA, Non-EU. (reposiTUm)

12.   Hobler, G., Kresse, G. (2005).
Ab-Initio Calculations of the Interaction Between Native Point Defects in Silicon.
Materials Research Society Spring Meeting (MRS), San Francisco, Non-EU. (reposiTUm)

11.   Moutanabbir, O., Terreault, B., Chicoinec, M., Simpson, J., Zahel, T., Hobler, G. (2005).
Hydrogen/Deuterium-Defect Complexes Involved in the Ion-Cutting of Si(001) at the Sub-100 Nm Scale.
International Conference on Defects in Semiconductors, Awaji Island, Hyogo, Japan, Austria. (reposiTUm)

10.   Wanzenböck, H. D., Hobler, G., Langfischer, H., Harasek, S., Brezna, W., Smoliner, J., Bertagnolli, E. (2002).
Characterization of Doping and Intermixing Effects of Focused Ion Beam Processing.
IBMM 2002, Kobe, Japan, Austria. (reposiTUm)

9.   Otto, G., Hobler, G., Gärtner, K. (2002).
Defect Characterization of 10-200 eV Recoil Events in Silicon Using Classical Molecular Dynamcs.
6th Int. Conf. Computer Simulation of Radiation Effects in Solids, Dresden, Deutschland, Austria. (reposiTUm)

8.   Hobler, G., Otto, G. (2002).
Detailed Modeling of Ion Implantation Damage in Silicon Using a Binary Collision Approach With Information From Molecular Dynamics Simulations.
IBMM 2002, Kobe, Japan, Austria. (reposiTUm)

7.   Wanzenböck, H. D., Harasek, S., Hobler, G., Hutter, H., Störi, H., Pongratz, P., Bertagnolli, E. (2002).
Dielectric Nanostructure Fabricatio Using a Focused Ion Beam.
IBMM 2002, Kobe, Japan, Austria. (reposiTUm)

6.   Hobler, G. (2002).
Status and Open Problems in Silicon Implant Damage Modeling.
3rd Int. Meeting Challenges in Predictive Process Simulation, Prague, Czech Republic, Austria. (reposiTUm)

5.   Boxleitner, W., Hobler, G., Klüppel, V., Cerva, H. (2000).
Dynamic Simulation of Topography Evolution and Damage Formation in TEM Sample Preparation Using Focused Ion Beams.
12th International Conference Ion Beam Modification of Materials, Gramado-Canela, Brasil, Austria. (reposiTUm)

4.   Boxleitner, W., Hobler, G. (2000).
FIBSIM -- Dynamic Monte Carlo Simulation of Compositional and Topography Changes Caused by Focused Ion Beam Milling.
5th Interanional Conference Computer Simulation of Radiation Effects in Solids, Penn State University, USA, Austria. (reposiTUm)

3.   Hobler, G. (2000).
Modeling of Focused Ion Beam Milling.
Bell Laboratories, Lucent Technologies, Austria. (reposiTUm)

2.   Hobler, G., Betz, G. (2000).
On the Useful Range of Application of Molecular Dynamics Simulations in the Recoil Interaction Approximation.
5th Interanional Conference Computer Simulation of Radiation Effects in Solids, Penn State University, USA, Austria. (reposiTUm)

1.   Palmetshofer, L., Gritsch, M., Hobler, G. (2000).
Range Ot Ion-Implanted Rare Earth Element in Si and Si02.
Materials Research Society Spring Meeting (MRS), San Francisco, Non-EU. (reposiTUm)

Doctor's Theses (authored and supervised)

9.  M. Kampl:
"Investigating Hot-Carrier Effects using the Backward Monte Carlo Method";
Supervisor, Reviewer: H. Kosina, A. Garcia Loureiro, G. Hobler; Institut für Mikroelektronik, 2019; oral examination: 2019-04-05. https://doi.org/10.34726/hss.2019.65003

8.  S. Lindsey:
"Computer Simulation of FIB Sputtering";
Supervisor, Reviewer: G. Hobler, P. Pichler; E362, 2015; oral examination: 2015-03-17.

7.   Ebm, C. (2010).
Simulation of Ion Beam Induced Etching and Deposition
Technische Universität Wien. (reposiTUm)

6.   Wind, M. (2009).
Interaction of Ionizing Radiation Fields With Integrated Electronic Components
Technische Universität Wien. (reposiTUm)

5.   Zahel, T. (2009).
Modelling Defect Formation and Evolution During SOI Wafer Fabrication
Technische Universität Wien. (reposiTUm)

4.   Kim, H.-B. (2007).
Design, Simulation and Fabrication of Micro/Nano Functional Structures Using Ion Beams
Technische Universität Wien. (reposiTUm)

3.  D. Kovac:
"Multiscale Modeling of Ion Implantation Damage in Silicon";
Supervisor, Reviewer: G. Hobler, L. Palmetshofer; Institut für Festkörperelektronik, 2007; oral examination: 2007-04-24.

2.  G. Otto:
"Multi-method Simulations and Transmission Electron Microscope Investigations of Ion Implantation Damage in Silicon";
Supervisor, Reviewer: G. Hobler, P. Pongratz; Institut für Festkörperelektronik, 2005.

1.  G. Hobler:
"Simulation der Ionenimplantation in ein-, zwei- und dreidimensionalen Strukturen";
Supervisor, Reviewer: S. Selberherr, W. Fallmann; Institut für Mikroelektronik, 1988; oral examination: 1988-11-23.

Diploma and Master Theses (authored and supervised)

8.   Kainz, H. (2018).
Simulation Und Experimentelle Verifikation Von Mechanischen Verspannungen in Thermisch Oxidierten Silizium Nanodrähten
Technische Universität Wien. (reposiTUm)

7.  T. Zahel:
"Investigation of the isotope effect in hydrogen induced blistering of silicon using kinetic Monte Carlo Simulation";
Supervisor: G. Hobler; Institut für Festkörperelektronik, 2005.

6.   Zahel, T. (2004).
Investigation of the Isotope Effect in Hydrogen-Induced Blistering of Silicon Using Kinetic Monte Carlo Simulation
Technische Universität Wien. (reposiTUm)

5.  G. Fehlmann:
"Untersuchungen von Modellen für die Monte-Carlo-Simulation";
Supervisor: G. Hobler; Institut für Festkörperelektronik, 2000.

4.  P. Lampacher:
"Dram-Leseverstärker mit Mismatchkompensation der Entscheidertransistoren";
Supervisor: G. Hobler; Institut für Festkörperelektronik, 1999.

3.  S. Halama:
"Untersuchung der thermischen Oxidation von Silicium mit Hilfe molekulardynamischer Simulationsmethoden";
Supervisor: G. Hobler, S. Selberherr; Institut für Mikroelektronik, 1989.

2.  K. Slama:
"Simulation der Ionenimplantation von Bor in Siliziumeinkristallen bei niedrigen Energien";
Supervisor: S. Selberherr, G. Hobler; Institut für Mikroelektronik, 1988.

1.  G. Hobler:
"Monte-Carlo Simulation der Ionenimplantation";
Supervisor: S. Selberherr, E. Langer; Institut für Allgemeine Elektrotechnik und Elektronik, 1985.

Patents

1.  G. Hobler, M. Mastrapasqua, M.R. Pinto, E. Sangiorgi:
"Monolithically integrated static random access memory device";
Patent: USA, No. 6144073; submitted: 2000-11-01, granted: 2000-11-07.

Scientific Reports

11.   Lindsey, S., Hobler, G., Rue, C., Maazouz, M. (2012).
Focused Ion Beam Simulation - Investigation of the Curtaining Effect in TEM Sample Preparation.
(reposiTUm)

10.   Zahel, T., Hobler, G. (2009).
IMSIL-kLMC.
(reposiTUm)

9.   Zahel, T., Hobler, G. (2009).
Kinetic Monte Carlo Studies of Smart Cut Technology in Si: Final Report.
(reposiTUm)

8.   Zahel, T., Hobler, G. (2008).
Kinetic Monte Carlo Studies of Smart Cut Technology in Si: Platelet Model and Influence of He Damage on Platelet Formation.
(reposiTUm)

7.   Zahel, T., Hobler, G. (2008).
Kinetic Monte Carlo Studies of Smart Cut Technology in Si: The Influence of He Damage on Defects Generated by H and He Co-Implantation.
(reposiTUm)

6.   Beck, P., Hobler, G., Köck, A., Rollet, S., Wachmann, E., Wind, M. (2008).
RADSI - Radiation Hardness of Silicon Nanostructures, Technical Final Report.
(reposiTUm)

5.   Hobler, G. (2007).
IMSIL Code Modification and Calibration for H Inplantations Into GaN.
(reposiTUm)

4.   Hobler, G., Kovac, D. (2007).
Interim Report on FIBSIM Code Development.
(reposiTUm)

3.   Hobler, G., Zahel, T. (2007).
Kinetic Monte Carlo Studies of Smart Cut Technology in Si.
(reposiTUm)

2.   Beck, P., Hobler, G., Wachmann, E. (2007).
RADSI Progress Report.
(reposiTUm)

1.   Boxleitner, W., Hobler, G. (2000).
High Quality Sample Operation for Nanometric Analysis and Testing Equipments.
(reposiTUm)