Publications Gerhard Hobler
184 records
| 77. | R.M. Bradley, G. Hobler: "Second order corrections to the sputter yield of a curved surface"; Journal of Applied Physics, 129, (2021), 194301-1 - 194301-11 doi:10.1063/5.0047520. BibTeX |
| 76. | K. Schlueter, K. Nordlund, G. Hobler, M. Balden, F. Granberg, O Flinck, T. F. da Silva, R. Neu: "Absence of a Crystal Direction Regime in which Sputtering Corresponds to Amorphous Material"; Physical Review Letters, 125, (2020), 225502-1 - 225502-6 doi:10.1103/PhysRevLett.125.225502. BibTeX |
| 75. | G. Hobler, D. Maciazek, Z. Postawa: "Ion bombardment induced atom redistribution in amorphous targets: MD versus BCA"; Nuclear Instruments & Methods in Physics Research Section B, 447, (2019), 30 - 33 doi:10.1016/j.nimb.2019.03.028. BibTeX |
| 74. | G. Hobler, K. Nordlund: "Channeling maps for Si ions in Si: Assessing the binary collision approximation"; Nuclear Instruments & Methods in Physics Research Section B, 449, (2019), 17 - 21 doi:10.1016/j.nimb.2019.04.029. BibTeX |
| 73. | G. Hobler, D. Maciazek, Z. Postawa: "Crater function moments: Role of implanted noble gas atoms"; Physical Review B, 97, (2018), 155307-1 - 155307-13 doi:10.1103/PhysRevB.97.155307. BibTeX |
| 72. | K. Nordlund, G. Hobler: "Dependence of ion channeling on relative atomic number in compounds"; Nuclear Instruments & Methods in Physics Research Section B, 435, (2018), 61 - 69 doi:10.1016/j.nimb.2017.11.020. BibTeX |
| 71. | H.M. Urbassek, M. Nietiadi, R.M. Bradley, G. Hobler: "Sputtering of SicGe1−c nanospheres"; Physical Review B, 97, (2018), 10 page(s) doi:10.1103/PhysRevB.97.155408. BibTeX |
| 70. | S. Lindsey, G. Hobler, D. Maciazek, Z. Postawa: "Simple model of surface roughness for binary collision sputtering simulations"; Nuclear Instruments & Methods in Physics Research Section B, 393, (2017), 17 - 21 doi:10.1016/j.nimb.2016.09.028. BibTeX |
| 69. | G. Hobler, R.M. Bradley, Herbert M. Urbassek: "Probing the limitations of Sigmund´s model of spatially resolved sputtering using Monte Carlo simulations"; Physical Review B, 93, (2016), 1 - 17 doi:10.1103/PhysRevB.93.205443. BibTeX |
| 68. | G. Hobler, M. Nietiadi, R.M. Bradley, Herbert M. Urbassek: "Sputtering of silicon membranes with nanoscale thickness"; Journal of Applied Physics, 119, (2016), 245105. BibTeX |
| 67. | K. Nordlund, F. Djurabekova, G. Hobler: "Large fraction of crystal directions leads to ion channeling"; Physical Review B, 94, (2016), 1 - 20 doi:10.1103/PhysRevB.94.214109. BibTeX |
| 66. | G. Hobler: "Combined binary collision and continuum mechanics model applied to focused ion beam milling of a silicon membrane"; Nuclear Instruments & Methods in Physics Research Section B, 352, (2015), 22 - 26. BibTeX |
| 65. | S. Lindsey, S. Waid, G. Hobler, H. D. Wanzenböck, E. Bertagnolli: "Inverse modeling of FIB milling by dose profile optimization"; Nuclear Instruments & Methods in Physics Research Section B, 341, (2014), 77 - 83 doi:10.1016/j.nimb.2014.09.006. BibTeX |
| 64. | G. Hobler: "Assessment of surface potential models by molecular dynamics simulations of atom ejection from (100)-Si surfaces"; Nuclear Instruments & Methods in Physics Research Section B, 303, (2013), 165 - 169. BibTeX |
| 63. | S. Lindsey, G. Hobler: "Sputtering of silicon at glancing incidence"; Nuclear Instruments & Methods in Physics Research Section B, 303, (2013), 142 - 147 doi:10.1016/j.nimb.2012.12.087. BibTeX |
| 62. | H. Kim, G. Hobler, A. Steiger-Thirsfeld, A. Lugstein, E. Bertagnolli, E. Platzgummer, H. Löschner: "Sputter-Redeposition Method for the Fabrication of Automatically Sealed Micro/Nanochannel using FIBs"; International Journal Of Precision Engineering And Manufacturing, 12, (2012), 893 - 898 doi:10.1007/s12541-011-0119-3. BibTeX |
| 61. | S. Lindsey, G. Hobler: "The significance of redeposition and backscattering in nanostructure formation by focused ion beams"; Nuclear Instruments & Methods in Physics Research Section B, 282, (2012), 12 - 16 doi:10.1016/j.nimb.2011.08.051. BibTeX |
| 60. | M. Budil, G. Hobler: "Topography simulation of sputtering using an algorithm with second order approximation in space"; Nuclear Instruments & Methods in Physics Research Section B, 269, (2011), 1614 - 1618. BibTeX |
| 59. | C. Ebm, G. Hobler, S. Waid, H. D. Wanzenböck: "Quantitative simulation of ion-beam induced deposition of nanostructures"; Journal of Vacuum Science & Technology B, 29, (2011), 0110311 - 0110315 doi:10.1116/1.3533951. BibTeX |
| 58. | G. Hobler, D. Kovac: "Dynamic binary collision simulation of focused ion beam milling of deep trenches"; Nuclear Instruments & Methods in Physics Research Section B, 269, (2011), 1609 - 1613. BibTeX |
| 57. | C. Ebm, G. Hobler, S. Waid, H. D. Wanzenböck: "Modeling of precursor coverage in ion-beam induced etching and verification with experiments using XeF2 on SiO2"; Journal of Vacuum Science & Technology B, 28, (2010), 946 - 951 doi:10.1116/1.3481139. BibTeX |
| 56. | C. Ebm, G. Hobler: "Assessment of approximations for efficient topography simulation of ion beam processes: 10 keV Ar on Si"; Nuclear Instruments & Methods B, 267, (2009), 2987 - 2990 doi:10.1016/j.nimb.2009.06.014. BibTeX |
| 55. | C. Ebm, E. Platzgummer, H. Löschner, S. Eder-Kapl, P. Jöchl, M. Kümmel, R. Reitinger, G. Hobler, A. Köck, R. Hainberger, M. Wellenzohn, F. Letzkus, M. Irmscher: "Ion multibeam nanopatterning for photonic applications: Experiments and simulations, including study of precursor gas induced etching and deposition"; Journal of Vacuum Science & Technology B, 27, (2009), 2668 - 2673. BibTeX |
| 54. | D. Kovac, G. Hobler: "Amorphous pocket model based on the modified heat transport equation and local lattice collapse"; Nuclear Instruments & Methods B, 267, (2009), 1229 - 1231 doi:10.1016/j.nimb.2009.01.032. BibTeX |
| 53. | H. Kim, G. Hobler: "Ion Beam Induced Micro/Nano Fabrication: Modeling"; Journal of the Korean Society for Precision Engineering, 24, (2007), 108 - 115. BibTeX |
| 52. | H. Kim, G. Hobler: "Ion Beam Induced Micro/Nano Fabrication: Shape Fabrication"; Journal of the Korean Society for Precision Engineering, 24, (2007), 109 - 116. BibTeX |
| 51. | H. Kim, G. Hobler, A. Lugstein, E. Bertagnolli: "Simulation of ion beam induced micro/nano fabrication"; Journal of Micromechanics and Microengineering, 17, (2007), 1183 doi:10.1088/0960-1317/17/6/011. BibTeX |
| 50. | H. Kim, G. Hobler, A. Steiger-Thirsfeld, A. Lugstein, E. Bertagnolli: "Full three-dimensional simulation of focused ion beam micro/nanofabrication"; Nanotechnology, 18, (2007), 2453031 - 2453038. BibTeX |
| 49. | H. Kim, G. Hobler, A. Steiger-Thirsfeld, A. Lugstein, E. Bertagnolli: "Level set approach for the simulation of focused ion beam processing on the micro/nano scale"; Nanotechnology, 18, (2007), 2653071 - 2653076. BibTeX |
| 48. | H. Kim, G. Hobler, A. Steiger-Thirsfeld, A. Lugstein, E. Bertagnolli: "Simulation-based approach for the accurate fabrication of blazed grating sturctures by FIB"; Optics Express, 15, (2007), 9444 - 9449. BibTeX |
| 47. | W. MoberlyChan, D. Adams, M. Aziz, G. Hobler, T. Schenkel: "Fundamentals of Focused Ion Beam Nanostructural Processing: Below, At, and Above the Surface"; MRS Bulletin, 32, (2007), 424 - 432. BibTeX |
| 46. | G. Otto, G. Hobler, L. Palmetshofer, P. Pongratz: "Amorphous pockets in Si: Comparison of coupled molecular dynamics and TEM image contrast simulations with experimental results"; Nuclear Instruments & Methods in Physics Research Section B, 255, (2007), 105 - 109. BibTeX |
| 45. | Z. Rong, F. Gao, W. Weber, G. Hobler: "Monte Carlo simulations of defect recovery within a 10 keV collision cascade in 3C-SiC"; Journal of Applied Physics, 102, (2007), 1035081 - 1035087. BibTeX |
| 44. | G. Hobler, K. Bourdelle, T. Akatsu: "Random and channeling stopping power of H in Si below 100keV"; Nuclear Instruments & Methods B, 242, (2006), 617 - 619. BibTeX |
| 43. | D. Kovac, G. Hobler: "Investigation of the impact of defect models on Monte Carlo simulations of RBS/C spectra"; Nuclear Instruments & Methods B, 249, (2006), 776 - 779. BibTeX |
| 42. | O. Moutanabbir, B. Terreault, M. Chicoine, J. Simpson, T. Zahel, G. Hobler: "Hydrogen/Deuterium-defect complexes involved in the ion cutting of Si (0 0 1) at the sub-100 nm scale"; Physica B: Condensed Matter, 376, (2006), 36 - 40. BibTeX |
| 41. | G. Otto, G. Hobler, L. Palmetshofer, K. Mayerhofer, K. Piplits, H. Hutter: "Dose-rate dependence of damage formation in Si by N implantation as determined from channeling profile measurements"; Nuclear Instruments & Methods B, 242, (2006), 667 - 669. BibTeX |
| 40. | G. Otto, G. Hobler, P. Pongratz, L. Palmetshofer: "Is there an influence of ion-beam-induced interfacial amorphization on the a/c-interface depth in silicon at common implantation energies?"; Nuclear Instruments & Methods in Physics Research Section B, 253, (2006), 227 - 231 doi:10.1016/j.nimb.2006.10.031. BibTeX |
| 39. | G. Hobler, G. Kresse: "Ab initio calculations of the interaction between native point defects in silicon"; Materials Science and Engineering B, 124-125, (2005), 368 - 371. BibTeX |
| 38. | G. Hobler, G. Otto, D. Kovac, L. Palmetshofer, K. Mayerhofer, K. Piplits: "Multiscale approach for the analysis of channeling profile measurements of ion implantation damage"; Nuclear Instruments & Methods B, 228, (2005), 360 - 363. BibTeX |
| 37. | D. Kovac, G. Otto, G. Hobler: "Modeling of amorphous pocket formation in silicon by numerical solution of the heat transport equation"; Nuclear Instruments & Methods B, 228, (2005), 226 - 229. BibTeX |
| 36. | K. Mayerhofer, J. Foisner, K. Piplits, G. Hobler, L. Palmetshofer, H. Hutter: "Range evaluation in SIMS depth profiles of Er - implantations in silicon"; Applied Surface Science, 252, (2005), 271 - 277. BibTeX |
| 35. | G. Otto, D. Kovac, G. Hobler: "Coupled BC/kLMC simulations of the temperature dependence of implant damage formation in silicon"; Nuclear Instruments & Methods B, 228, (2005), 256 - 259. BibTeX |
| 34. | G. Hobler, G. Otto: "Amorphous pocket model for silicon based on molecular dynamics simulations"; Nuclear Instruments & Methods B, 206, (2003), 81 - 84. BibTeX |
| 33. | G. Hobler, G. Otto: "Status and open problems in modeling of as-implanted damage in silicon"; Materials Science in Semiconductor Processing, 6, (2003), 1 - 14. BibTeX |
| 32. | A. Lugstein, W. Brezna, G. Hobler, E. Bertagnolli: "Method to characterize the three-dimensional distribution of focused ion beam induced damage in silicon after 50 keV Ga+ irradiation"; Journal of Vacuum Science & Technology A, 21, (2003), 1644 - 1648. BibTeX |
| 31. | G. Otto, G. Hobler, K. Gärtner: "Defect characterization of low-energy recoil events in silicon using classical molecular dynamics simulation"; Nuclear Instruments & Methods B, 202, (2003), 114 - 119. BibTeX |
| 30. | A. Lugstein, B. Basnar, G. Hobler, E. Bertagnolli: "Current density profile extraction of focused ion beams based on atomic force microscopy contour profiling of nanodots"; Journal of Applied Physics, 92, (2002), 4037 - 4042. BibTeX |
| 29. | W. Boxleitner, G. Hobler: "FIBSIM -- Dynamic Monte Carlo simulation of compositional and topography changes caused by focused ion beam milling"; Nuclear Instruments & Methods B, 180, (2001), 125. BibTeX |
| 28. | W. Boxleitner, G. Hobler, V. Klüppel, H. Cerva: "Simulation of topography evolution and damage formation in TEM sample preparation using focused ion beams"; Nuclear Instruments & Methods B, 175-177, (2001), 102. BibTeX |
| 27. | G. Hobler, G. Betz: "On the useful range of application of molecular dynamics simulations in the recoil interaction approximation"; Nuclear Instruments & Methods B, 180, (2001), 203. BibTeX |
| 26. | L. Palmetshofer, M. Gritsch, G. Hobler: "Range of ion-implanted rare earth elements in Si and SiO2"; Materials Science and Engineering B, B 81, (2001), 83. BibTeX |
| 25. | G. Hobler, L. Pelaz, C.S. Rafferty: "Dose, energy, and ion species dependence of the effective plus-factor for transient enhanced diffusion"; Journal of the Electrochemical Society, 147, (2000), 3494 - 3501. BibTeX |
| 24. | H.-H. Vuong, Y. Xie, M. Frei, G. Hobler, L. Pelaz, C.S. Rafferty: "Use of transient enhanced diffusion to tailor boron out-diffusion"; IEEE Transactions on Electron Devices, 47, (2000), 1401 - 1405. BibTeX |
| 23. | G. Hobler, J. Bevk, A. Agarwal: "Channeling of low-energy implanted ions through the poly-Si gate"; IEEE Electron Device Letters, 20 (7), (1999), 357 - 359. BibTeX |
| 22. | G. Hobler, L. Pelaz, C.S. Rafferty: "Continuum treatment of spatial correlation in damage annealing"; Nuclear Instruments & Methods B, 153, (1999), 172 - 176. BibTeX |
| 21. | L. Pelaz, G.H. Gilmer, M. Jaraiz, S.B. Herner, H.-J. Gossmann, D.J. Eaglesham, G. Hobler, C.S. Rafferty, J. Barbolla: "Modeling of the ion mass effect on transient enhanced diffusion: deviation from the "+1" model"; Applied Physics Letters, 73(10), (1998), 1421 - 1423. BibTeX |
| 20. | R. von Criegern, F. Jahnel, R. Lange-Gieseler, P. Pearson, G. Hobler, A. Simionescu: "Vertification of "lateral second. ion mass spectrom." as method for measuring lateral dopant dose distr. in me test str."; Journal of Vacuum Science & Technology B, B 16(1), (1998), 386 - 393. BibTeX |
| 19. | G. Hobler, G. Fehlmann: "A study of ultra-shallow implanted dopant profiles in silicon using BC and MD simulations"; Radiation Effects and Deffects in Solids, 141, (1997), 113 - 125. BibTeX |
| 18. | A.Y. Nikulin, A.W. Stevenson, H. Hashizume, D. Cookson, G. Hobler, S.W. Wilkins: "Model-Independent determination of 2D strain distribution in ion implanted silicon crystals from x-ray diffraction data"; Semiconductor Science and Technology, 12(3), (1997), 350 - 354. BibTeX |
| 17. | J. Esfandyari, Ch. Schmeiser, S. Senkader, G. Hobler, B. Murphy: "Computer simulation of oxygen precipitation in Cz-grown silicon during HI-LO-HI anneals"; Journal of the Electrochemical Society, 143(3), (1996), 995 - 1001. BibTeX |
| 16. | G. Hobler: "Critical angles and low-energy limits to ion channeling in silicon"; Radiation Effects and Deffects in Solids, 139, (1996), 21 - 85. BibTeX |
| 15. | G. Hobler: "Theoretical estimate of the low-energy limit to ion channeling"; Nuclear Instruments & Methods B, 115, (1996), 323 - 327. BibTeX |
| 14. | G. Hobler, A. Simionescu, L. Palmetshofer, F. Jahnel, R. von Criegern, C. Tian, G. Stingeder: "Vertification of models for the simulation of boron implantation into crystalline silicon"; Journal of Vacuum Science & Technology B, B 14(1), (1996), 272 - 277. BibTeX |
| 13. | S. Senkader, G. Hobler, Ch. Schmeiser: "Determination of the oxide precipitate-silicon matrix interface energy by consid. the change oft precipitate morphology"; Applied Physics Letters, 69(15), (1996), 2202 - 2204. BibTeX |
| 12. | K. Gärtner, D. Stock, B. Weber, G. Betz, M. Hautala, G. Hobler, M. Hou, S. Sarite, W. Eckstein, J.J. Jimenez-Rodriguez, A.M.C. Perez-Martin, E.T. Andribet, V. Konoplev, A. Gras-Marti, M. Posselt, M.H. Shapiro, T.A. Tombrello, H.M. Urbassek, H. Hensel, Y. Yamamura, W. Takeuchi: "Round robin computer simulation of ion transmission through thin crystalline layers"; Nuclear Instruments & Methods B, 102, (1995), 183 - 197. BibTeX |
| 11. | K. Ghaderi, G. Hobler: "Simulation of phosphorus diffusion in silicon using a pair diffusion model with a reduced number of parameters"; Journal of the Electrochemical Society, 142, (1995), 1654 - 1658. BibTeX |
| 10. | K. Ghaderi, G. Hobler, M. Budil, L. Mader, H.J. Schulze: "Determination of silicon point defect parameters and reaction barrier energies from gold diffusion experiments"; Journal of Applied Physics, 77(3), (1995), 1320 - 1322. BibTeX |
| 9. | G. Hobler: "Monte Carlo simulation of two-dimensional implanted dopant distributions at mask edges"; Nuclear Instruments & Methods B, 96, (1995), 155 - 162. BibTeX |
| 8. | G. Hobler, A. Simionescu: "Acceleration of binary collision simulations in crystalline targets using critical angles for ion channeling"; Nuclear Instruments & Methods B, 102, (1995), 24 - 28. BibTeX |
| 7. | G. Hobler, A. Simionescu, L. Palmetshofer, C. Tian, G. Stingeder: "Boron channeling implantations in silicon: Modeling of electronic stopping and damage accumulation"; Journal of Applied Physics, 77(8), (1995), 3697 - 3703. BibTeX |
| 6. | S. Senkader, J. Esfandyari, G. Hobler: "A model for oxygen precipitation in silicon including bulk stacking fault growth"; Journal of Applied Physics, 78(11), (1995), 6469 - 6476. BibTeX |
| 5. | A. Simionescu, S. Herzog, G. Hobler, R. Schork, J. Lorenz, C. Tian, G. Stingeder: "Modeling of electronic stopping and damage accumulation during arsenic implantation in silicon"; Nuclear Instruments & Methods B, 100, (1995), 483 - 489. BibTeX |
| 4. | A. Simionescu, G. Hobler, S. Bogen, L. Frey, H. Ryssel: "Model for the electronic stopping of channeled ions in silicon around the stopping power maximum"; Nuclear Instruments & Methods B, 106, (1995), 47 - 50. BibTeX |
| 3. | G. Hobler, S. Selberherr: "Monte Carlo Simulation of Ion Implantation into Two- and Three-Dimensional Structures"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 8, (1989), 450 - 459 doi:10.1109/43.24873. BibTeX |
| 2. | G. Hobler, S. Selberherr: "Two-Dimensional Modeling of Ion Implantation Induced Point Defects"; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 7, (1988), 174 - 180 doi:10.1109/43.3147. BibTeX |
| 1. | G. Hobler, E. Langer, S. Selberherr: "Two-Dimensional Modeling of Ion Implantation with Spatial Moments"; Solid-State Electronics, 30, (1987), 445 - 455 doi:10.1016/0038-1101(87)90175-4. BibTeX |
| 2. | H. Kim, G. Hobler: "Simulation of Focused Ion Beam Milling"; in "Nanofabrication Using Focused Ion and Electron Beam", I. Utke, S. Moshkalev, P. Russell (ed); Oxford University Press, 2012, ISBN: 9780199734214, 226 - 247. BibTeX |
| 1. | F. Rüdenauer, G. Hobler, J. Mitterauer, H. Koops, L. Palmetshofer, H. Bluhm: "Ion beam devices for material processing and analysis"; in "Vacuum Electronics, Components and Devices", Springer, Berlin, 2008, ISBN: 9783540719281, 231 - 263. BibTeX |
| 44. | M. Current, G. Hobler, Y. Kawasaki: "Aspects of Highly-channeled MeV Implants of Dopants in Si(100)"; Talk: 19th International Workshop on Junction Technology 2019, Kyoto, Japan; (invited) 2019-06-06 - 2019-06-07; in "19th International Workshop on Junction Technology 2019", (2019), ISBN: 978-4-86348-728-4, 40 - 45. BibTeX |
| 43. | M. Current, G. Hobler, Y. Kawasaki, M. Sugitani: "Channeled MeV B, P and As Profiles in Si(100): Monte-Carlo Models and SIMS"; Talk: International Conference on Ion Implantation Technology, Würzburg; 2018-09-16 - 2018-09-21; in "22nd International Conference on Ion Implantation Technology", (2018), 251 - 254. BibTeX |
| 42. | G. Hobler, K. Nordlund, M. Current, W. Schustereder: "Simulation Study of Al Channeling in 4H-SiC"; Talk: International Conference on Ion Implantation Technology, Würzburg; 2018-09-16 - 2018-09-21; in "22nd International Conference on Ion Implantation Technology", (2018), 247 - 250. BibTeX |
| 41. | G. Hobler, D. Maciazek, Z. Postawa, R.M. Bradley: "Crater function moments: The influence of implanted noble gas atoms"; Talk: International Workshop on Nanoscale Pattern Formation at Surfaces, Helsinki; 2017-06-26 - 2017-06-30; in "Book of Abstracts", (2017), 33. BibTeX |
| 40. | G. Hobler, R.M. Bradley, Herbert M. Urbassek: "Testing Sigmund´s Model of Sputtering"; International Workshop on Nanoscale Pattern Formation at Surfaces, Krakow, Polen; 2015-07-12 - 2015-07-16; in "Book of Abstracts", (2015), 7. BibTeX |
| 39. | S. Waid, H. D. Wanzenböck, G. Hobler, T. Zahel, E. Bertagnolli, M. Mühlberger, R. Schöftner: "Topography Extraction Of 3d Structures Through Afm Of Nanoimprints"; Talk: 9th International Conference on Nanoimprint and Nanoprint, Kopenhagen; 2010-10-13 - 2010-10-15; in "9th International Conference on Nanoimprint and Nanoprint", (2010), . BibTeX |
| 38. | C. Ebm, G. Hobler: "Simulation of Ion-beam Induced Etching and Deposition Using a Non-local Recoil-based Algorithm"; Talk: MRS Spring Meeting, San Francisco; 2009-04-13 - 2009-04-17; in "MRS online Proceedings library", (2009), 6 page(s) . BibTeX |
| 37. | G. Hobler, H. Kim: "3D FIB process simulation for photonic applications"; Talk: 1st International Workshop on FIB for Photonics, Eindhoven, the Netherlands; (invited) 2008-06-13 - 2008-06-14; in "Proceedings of the First International Workshop on FIB for Photonics", (2008), ISBN: 978-90-365-2678-4, 8 - 11. BibTeX |
| 36. | T. Zahel, G. Hobler, K. Bourdelle: "Investigation of defect evolution during hydrogen implantation using kinetic Monte Carlo simulations"; Poster: E-MRS Spring Meeting, Strasbourg, France; 2008-05-26 - 2008-05-30; in "Abstracts", (2008), . BibTeX |
| 35. | H. Kim, G. Hobler: "Analysis of Ion Beam-Solid Interactions for Nano Fabrication"; Talk: Autumn Conference of the Korean Society of Precision Engineering, GangJu, South Korea; 2005-10-20 - 2005-10-21; in "Proc. 2005 Autumn Conference of the Korean Society of Precision Engineering", (2005), 581 - 584. BibTeX |
| 34. | H. Kim, G. Hobler, A. Lugstein, E. Bertagnolli: ""AMADEUS" Software for Ion Beam Nano Patterning and Characteristics of Nano Fabrication"; Talk: Autumn Conference of the Korean Society of Precision Engineering, GangJu, South Korea; 2005-10-20 - 2005-10-21; in "Proc. 2005 Autumn Conference of the Korean Society of Precision Engineering", (2005), 322 - 325. BibTeX |
| 33. | B. Terreault, M. Chicoine, N. Desrosiers, A. Giguere, G. Hobler, O. Moutanabbir, G. Ross, F. Schiettekatte, P. Simpson, T. Zahel: "Isotope effects in low-energy ion-induced splitting"; Talk: Meeting of the Electrochemical Society, Silicon-on-Insulator Technology and Devices XII, Quebec City, Canada; (invited) 2005-05-15 - 2005-05-20; in "Silicon-on-Insulator Technology and Devices XII", (2005), 155 - 166. BibTeX |
| 32. | T. Zahel, G. Otto, G. Hobler: "Atomistic simulation of the isotope effect on defect formation in H/D-implanted Si"; Talk: Meeting of the Electrochemical Society, Silicon-on-Insulator Technology and Devices XII, Quebec City, Canada; 2005-05-15 - 2005-05-20; in "Silicon-on-Insulator Technology and Devices XI", (2005), 179 - 184. BibTeX |
| 31. | T. Zahel, G. Otto, G. Hobler: "Atomistic Simulation of Hydrogen Implantation for SOI Wafer Production"; Talk: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Granadea, Spanien; 2005-01-19 - 2005-01-21; in "EUROSOI 2005, Book of Abstracts", (2005), 35 - 36. BibTeX |
| 30. | G. Hobler: "Simulation of Focused Ion Beam Milling"; Talk: SEM X Int. Congress & Exposition on Experimental and Applied Mechanics, Costa Mesa, CA; 2004-06-07 - 2004-06-10; in "Proc. 5th Int. Symp. MEMS and Nanotechnology", (2004), 46 - 51. BibTeX |
| 29. | G. Hobler, A. Lugstein, W. Brezna, E. Bertagnolli: "Simulation of focused ion beam induced damage formation in crystalline silicon"; Poster: Materials Research Society Fall Meeting (MRS), Boston/MA, USA; 2003-12-01 - 2003-12-05; in "Proceedings of MRS Fall Meeting 2003", (2004), 6 page(s) . BibTeX |
| 28. | G. Otto, G. Hobler: "Coupled kinetic Monte Carlo and molecular dynamics simulations of implant damage accumulation in silicon"; Poster: Materials Research Society Fall Meeting (MRS), Boston/MA, USA; 2003-12-01 - 2003-12-05; in "Proceedings of MRS Fall Meeting 2003", (2004), 1 - 6. BibTeX |
| 27. | G. Hobler, V. Moroz: "Initial conditions for transient enhanced diffusion: Beyond the plus-factor approach"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 2001-09-05 - 2001-09-07; in "Initial conditions for transient enhanced diffusion: Beyond the plus-factor approach", (2001), 34 - 37. BibTeX |
| 26. | G. Hobler, C. Murthy: "Towards a comprehensive model of electronic stopping in amorphous and crystalline silicon"; Talk: 13th Int. Conf. Ion Implantation Technology, Alpbach, Austria; 2000-09-17 - 2000-09-22; in "In Proceeding 13th Int. Conf. Ion Implantaion Technology,IIT-2000", (2000), 209 - 212. BibTeX |
| 25. | G. Hobler, V. Moroz: "Simple formulae for the effective plus-factor for transient enhanced diffusion"; Talk: European Solid-State Device Research Conference (ESSDERC), Cork, Ireland; 2000-09-11 - 2000-09-13; in "ESSDERC 2000", (2000), 168 - 171. BibTeX |
| 24. | J. Bevk, G. Hobler, D.C. Jacobson, W.M. Mansfield, J. Jackson: "Dopant profiles in dual-poly gates with buried ultra-low-energy implants"; Talk: International Conference on Electronic Materials, Charlottesville; 1999-07-01 in "40th Electronic Materials Conf. Tech. Progr.", (1999), 8. BibTeX |
| 23. | H.-J. Gossmann, C.S. Rafferty, G. Hobler, H.-H. Vuong, D.C. Jacobson: "Suppression of reverse short channel effect by a buried carbon layer"; Talk: IEEE Conference, Piscataway; 1999-07-01 in "IEDM Techn. Dig.", (1999), 725 - 728. BibTeX |
| 22. | G. Hobler, L. Pelaz, C.S. Rafferty: "Dose, energy and ion species dependence of the effective plusfactor for transient enhanced diffusion"; Talk: Process Physics and Modeling in Semiconductor Technology, Pennington; 1999-07-01 in "Process Physics and Modeling in Semiconductor Technology", (1999), 75 - 86. BibTeX |
| 21. | G. Hobler, C.S. Rafferty: "Modeling of (311) defects"; Talk: MRS Warrendale, Warrendale; 1999-07-01 in "Mat. Res. Soc. Sym. Proceeding", (1999), 568, 123 - 134. BibTeX |
| 20. | J. Bevk, S. Kuehne, H. Vaidya, W.M. Mansfield, G. Hobler: "Buried ultra-low-energy gate implants for sub 0.25micron CMOS technology"; Talk: VLSI, Berlin; 1998-07-01 in "Proceeding Symp. VLSI Technology", (1998), 74 - 75. BibTeX |
| 19. | G. Hobler, C.S. Rafferty, S. Senkader: "A model of (311) defect evolution based on nucleation theory"; Talk: IEEE Conference, Piscataway; 1997-07-01 in "Intl. Conf. Simultation of Semiconductor and Devices", (1997), 73 - 76. BibTeX |
| 18. | G. Hobler, H.-H. Vuong, J. Bevk, A. Agarwal, H.-J. Gossmann, D.C. Jacobson, M. Foad, A. Murrell, Y. Erokhin: "Modeling of ultra-low-energy boron implantation in silicon"; Talk: IEEE Conference, Piscataway; 1997-07-01 in "IEDM Techm. Dig.", (1997), 489 - 492. BibTeX |
| 17. | R. von Criegern, F. Jahnel, R. Lange-Gieseler, P. Pearson, G. Hobler, A. Simionescu: "Vertification of "lateral SIMS" ..."; Talk: 4th Int. Workshop on the Measurement..., Berlin; 1997-07-01 in "Proc. 4th Int. Workshop on the Measurement, Characterization and Modelling...", (1997), 22.1 - 22.11. BibTeX |
| 16. | S. Senkader, G. Hobler: "A kinetic model for precipitation of oxygen in silicon"; Talk: NATO ARW, Dordrecht; 1996-07-01 in "Early Stages of Oxygen-Precipitation in Silicon, NATO ARW Series", (1996), 447 - 454. BibTeX |
| 15. | S. Senkader, G. Hobler, Ch. Schmeiser: "Modeling and simultation of oxygen precipitation in Si: Precipitate-point defect interactions and influence of hydrogen"; Talk: IEEE Conference, Piscataway; 1996-07-01 in "SISPAD`96", (1996), 31 - 32. BibTeX |
| 14. | H. Stippel, G. Hobler, S. Selberherr: "Three-Dimensional Simulation of Ion Implantation"; Talk: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Peking; 1992-10-18 - 1992-10-24; in "Proceedings Solid State and Integrated Circuit Technology 92 Conference", (1992), 703 - 705. BibTeX |
| 13. | H. Stippel, S. Halama, G. Hobler, K. Wimmer, S. Selberherr: "Adaptive Grid for Monte Carlo Simulation of Ion Implantation"; Talk: International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (NUPAD), Seattle; 1992-05-31 - 1992-06-01; in "Proceedings NUPAD IV", (1992), ISBN: 0-7803-0516-7, 231 - 236. BibTeX |
| 12. | K. Wimmer, R. Bauer, S. Halama, G. Hobler, S. Selberherr: "Transformation Methods for Nonplanar Process Simulation"; Talk: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Zürich; 1991-09-12 - 1991-09-14; in "Proceedings SISDEP 91", (1991), ISBN: 3-89191-476-8, 131 - 138. BibTeX |
| 11. | S. Halama, G. Hobler, K. Wimmer, S. Selberherr: "Eine neue Methode zur Simulation der Diffusion in allgemeinen Strukturen"; Talk: Seminar Grundlagen und Technologie elektronischer Bauelemente, Großarl; 1991-03-20 - 1991-03-23; in "Tagungsbericht Seminar Grundlagen und Technologie elektronischer Bauelemente", (1991), 20 - 26. BibTeX |
| 10. | K. Wimmer, R. Bauer, S. Halama, G. Hobler, S. Selberherr: "Simulation nichtplanarer Herstellungsprozesse mit PROMIS"; Talk: Seminar Grundlagen und Technologie elektronischer Bauelemente, Großarl; 1991-03-20 - 1991-03-23; in "Tagungsbericht Seminar Grundlagen und Technologie elektronischer Bauelemente", (1991), 10 - 19. BibTeX |
| 9. | S. Halama, K. Wimmer, G. Hobler, S. Selberherr: "Finite-Differenzen Dreiecksnetzgenerierung für die Prozess-Simulation mit PROMIS"; Talk: Workshop Numerische Simulation für Technologieentwicklung (NuTech), Garmisch-Partenkirchen; 1990-09-20 - 1990-09-21; in "Proceedings NuTech", (1990), 3. BibTeX |
| 8. | K. Wimmer, R. Bauer, S. Halama, G. Hobler, S. Selberherr: "Prozess-Simulation in nichtplanaren Strukturen mit PROMIS"; Talk: Workshop Numerische Simulation für Technologieentwicklung (NuTech), Garmisch-Partenkirchen; 1990-09-20 - 1990-09-21; in "Proceedings NuTech", (1990), 4. BibTeX |
| 7. | G. Hobler, S. Halama, K. Wimmer, S. Selberherr, H. Pötzl: "RTA-Simulations with the 2-D Process Simulator PROMIS"; Talk: International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (NUPAD), Honolulu; 1990-06-03 - 1990-06-04; in "NUPAD III Techn. Digest", (1990), 13 - 14. BibTeX |
| 6. | G. Hobler, S. Selberherr: "Monte Carlo Simulation of Ion Implantation into Two- and Three-Dimensional Structures"; Talk: International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (NUPAD), Santa Clara; 1988-05-09 - 1988-05-10; in "Proceedings of the International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits", (1988), . BibTeX |
| 5. | G. Hobler, S. Selberherr: "Verification of Ion Implantation Models by Monte-Carlo Simulations"; Talk: European Solid-State Device Research Conference (ESSDERC), Bologna; 1987-09-14 - 1987-09-17; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1987), 445 - 448. BibTeX |
| 4. | G. Hobler, S. Selberherr: "Efficient Two-Dimensional Monte-Carlo Simulation of Ion Implantation"; Talk: International Conference on the Numerical Analysis of Semiconductor Devices (NASECODE), Dublin; 1987-06-17 - 1987-06-19; in "Proceedings Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits", (1987), 225 - 230. BibTeX |
| 3. | G. Hobler, E. Guerrero, S. Selberherr: "Two-Dimensional Modeling of Ion Implantation Induced Point Defects"; Talk: International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (NUPAD), Santa Clara; 1986-11-13 - 1986-11-14; in "Proceedings of the International Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits", (1986), 10 - 11. BibTeX |
| 2. | G. Hobler, E. Langer, S. Selberherr: "Two-Dimensional Modeling of Ion-Implantation"; Talk: International Conference on the Simulation of Semiconductor Devices and Processes (SISDEP), Swansea; 1986-07-21 - 1986-07-23; in "Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes", (1986), ISBN: 0-906674-59-x, 256 - 270. BibTeX |
| 1. | W. Jüngling, G. Hobler, S. Selberherr, H. Pötzl: "Adaptive Grids in Space and Time for Process and Device Simulators"; Talk: Numerical Grid Generation in Computational Fluid Dynamics Conference, Landshut; 1986-07-14 - 1986-07-17; in "Numerical Grid Generation in Computational Fluid Dynamics Conf.", (1986), ISBN: 0-906674-58-1, 729 - 739. BibTeX |
| 35. | K. Schlueter, K. Nordlund, M. Balden, T. Silva, G. Hobler, R. Neu: "Crystal-Orientation-Dependent Sputtering of Tungsten"; Poster: 24th International Conference on Ion Beam Analysis (IBA2019), Antibes, Frankreich; 2019-10-13 - 2019-10-18; . BibTeX |
| 34. | G. Hobler, D. Maciazek, Z. Postawa: "Ion bombardment-induced atom redistribution in amorphous silicon: MD versus BCA"; Talk: International Conference on Simulation of Radiation Effects in Solids, Shanghai; 2018-06-17 - 2018-06-22; . BibTeX |
| 33. | G. Hobler, K. Nordlund: "Channeling maps: Assessing the binary collision approximation"; Poster: International Conference on Simulation of Radiation Effects in Solids, Shanghai; 2018-06-17 - 2018-06-22; . BibTeX |
| 32. | K. Nordlund, F. Djurabekova, G. Hobler: "Effect of atom sizes in ionic compounds on channeling: channeling map analysis"; Poster: International Conference on Radiation Effects in Insulators, Versailles, France; 2017-07-02 - 2017-07-07; . BibTeX |
| 31. | G. Hobler, M. Nietiadi, R.M. Bradley, Herbert M. Urbassek: "Sputtering of silicon membranes with nanoscale thickness"; Talk: International Conference on Simulation of Radiation Effects in Solids, Loughborough, GB; 2016-06-19 - 2016-06-24; . BibTeX |
| 30. | S. Lindsey, G. Hobler, D. Maciazek, Z. Postawa: "Simple model of surface roughness for binary collision sputtering simulations"; Poster: International Conference on Simulation of Radiation Effects in Solids, Loughborough, GB; 2016-06-19 - 2016-06-24; . BibTeX |
| 29. | G. Hobler: "Combined binary collision and continuum mechanics model applied to focused ion beam milling of a silicon membrane"; Talk: International Conference on Computer Simulation on Radiation Effects in Solids, Alicante, Spanien; 2016-06-08 - 2016-06-13; . BibTeX |
| 28. | H. D. Wanzenböck, S. Waid, G. Hobler, S. Lindsey: "2.5D-Nanoimprint Lithography"; Poster: NIL Industrial Day, Linz; 2014-03-13 - 2014-03-14; . BibTeX |
| 27. | S. Lindsey, G. Hobler: "Simulation of Glancing Angle Sputtering with a Density Gradient Model to Represent Surface Roughness"; Talk: Particle-surface interactions: from surface analysis to materials processing (PASI), Luxemburg; 2013-06-03 - 2013-06-05; . BibTeX |
| 26. | S. Lindsey, S. Waid, G. Hobler, H. D. Wanzenböck, E. Bertagnolli: "Inverse Modeling of FIB Milling by Dose Profile Optimization"; Poster: European Materials Research Society (EMRS), Strasbourg, Frankreich; 2013-05-27 - 2013-05-31; . BibTeX |
| 25. | S. Waid, J. Mika, S. Lindsey, H. D. Wanzenböck, G. Hobler, E. Bertagnolli: "Fabrication of 3D Axon Isolation Channels by Inverse Modelling Assisted Focused Ion Beam Patterning"; Poster: Micro- and Nano-Engineering Conference, Toulouse, France; 2012-09-16 - 2012-09-20; . BibTeX |
| 24. | G. Hobler: "Molecular dynamics study of atom ejection from an eroding (100)-Si surface"; Talk: International Conference on Simulation of Radiation Effects in Solids, Santa Fe, New Mexico, USA; 2012-06-24 - 2012-06-29; . BibTeX |
| 23. | S. Lindsey, G. Hobler: "Sputtering of Silicon at Glancing Incidence"; Talk: International Conference on Simulation of Radiation Effects in Solids, Santa Fe, New Mexico, USA; 2012-06-24 - 2012-06-29; . BibTeX |
| 22. | S. Lindsey, G. Hobler: "The Role/Relevance/Significance/Implications of Redeposition and Backscattering in Focused Ion Beam Milling/Nanostructure Formation by Focused Ion Beams"; Poster: E-MRS Spring Meeting, Nice, Frankreich; 2011-05-09 - 2011-05-13; . BibTeX |
| 21. | M. Budil, G. Hobler: "Topography Simulation of Sputtering using an Algorithm with Second Order Approximation in Space"; Talk: International Conference on Simulation of Radiation Effects in Solids, Krakow, Polen; 2010-07-19 - 2010-07-23; . BibTeX |
| 20. | G. Hobler: "Binary Collision Simulation of Focused Ion Beam Milling of Deep Trenches"; Talk: International Conference on Simulation of Radiation Effects in Solids, Krakow, Polen; 2010-07-19 - 2010-07-23; . BibTeX |
| 19. | G. Hobler: "Simulation of Nanostructuring with Focused Ion Beams"; Talk: FIB-Workshop, Wien; (invited) 2010-06-28 - 2010-06-29; . BibTeX |
| 18. | C. Ebm, M. Budil, G. Hobler: "oeAssessment of approximations for efficient topography simulation of ion beam processes: 10 keV Ar on Si"; Talk: 9th International Conference on Simulation of Radiation Effects in Solids, Beijing, China; 2008-10-12 - 2008-10-17; . BibTeX |
| 17. | D. Kovac, G. Hobler: "oeAmorphous pocket model based on the modified heat transport equation and local lattice collapse"; Talk: International Conference on Ion Beam Modification of Materials (IBMM), Dresden, Deutschland; 2008-08-31 - 2008-09-05; . BibTeX |
| 16. | P. Pongratz, G. Otto, G. Hobler, L. Palmetshofer: "Analysis of Experimental TEM Image Contrast of Amorphous Pockets using Molecular Dynamics Computer Simulations aof Collision Cascades in Silicon"; Talk: ICDS -24, 24th International Conference on Defects in Semiconductors, New Mexico, USA; 2007-07-22 - 2007-07-27; . BibTeX |
| 15. | G. Hobler: "Simulation von Topographie- und Materialmodifikation mittels fokussierter Ionenstrahlen"; Talk: Seminar Institut für Allgemeine Physik (IAP), TU Wien; 2006-06-19. BibTeX |
| 14. | G. Otto, G. Hobler, L. Palmetshofer, P. Pongratz: "Comparison of TEM image contrast simulations of amorphous pockets in Si as obtained by molecular dynamics simulations with experimental results"; Talk: 8th Intern. Conf. on Computer Simulation of Radiation Effects in Solids (COSIRES 2006), Richland, Washington, USA; 2006-06-18 - 2006-06-23; . BibTeX |
| 13. | G. Otto, G. Hobler, L. Palmetshofer, P. Pongratz: "Verification of MD Results on Amorphous Pockets in Si using TEM Image Contrast Simulations"; Talk: 8th Intern. Conf. on Computer Simulation of Radiation Effects in Solids (COSIRES 2006), Richland, Washington, USA; 2006-06-18 - 2006-06-23; . BibTeX |
| 12. | O. Moutanabbir, B. Terreault, M. Chicoinec, J. Simpson, T. Zahel, G. Hobler: "Hydrogen/Deuterium-defect complexes involved in the ion-cutting of Si(001) at the sub-100 nm scale"; Talk: International Conference on Defects in Semiconductors, Awaji Island, Hyogo, Japan; (invited) 2005-07-24 - 2005-07-29; . BibTeX |
| 11. | G. Hobler, G. Kresse: "Ab-initio calculations of the interaction between native point defects in silicon"; Talk: Materials Research Society Spring Meeting (MRS), Straßburg, Frankreich; 2005-05-30 - 2005-06-03; . BibTeX |
| 10. | G. Hobler: "Status and open problems in silicon implant damage modeling"; Talk: 3rd Int. Meeting Challenges in Predictive Process Simulation, Prague, Czech Republic; 2002-10-13 - 2002-10-17; . BibTeX |
| 9. | G. Hobler, G. Otto: "Detailed modeling of ion implantation damage in silicon using a binary collision approach with information from molecular dynamics simulations"; Talk: IBMM 2002, Kobe, Japan; 2002-09-01 - 2002-09-06; . BibTeX |
| 8. | H. D. Wanzenböck, S. Harasek, G. Hobler, H. Hutter, H. Störi, P. Pongratz, E. Bertagnolli: "Dielectric nanostructure fabricatio using a focused ion beam"; Talk: IBMM 2002, Kobe, Japan; 2002-09-01 - 2002-09-06; . BibTeX |
| 7. | H. D. Wanzenböck, G. Hobler, H. Langfischer, S. Harasek, W. Brezna, J. Smoliner, E. Bertagnolli: "Characterization of Doping and intermixing effects of focused ion beam processing"; Talk: IBMM 2002, Kobe, Japan; 2002-09-01 - 2002-09-06; . BibTeX |
| 6. | G. Otto, G. Hobler, K. Gärtner: "Defect characterization of 10-200 eV recoil events in silicon using classical molecular dynamcs "; Talk: 6th Int. Conf. Computer Simulation of Radiation Effects in Solids, Dresden, Deutschland; 2002-06-23 - 2002-06-27; . BibTeX |
| 5. | W. Boxleitner, G. Hobler, V. Klüppel, H. Cerva: "Dynamic simulation of topography evolution and damage formation in TEM sample preparation using focused ion beams"; Talk: 12th International Conference Ion Beam Modification of Materials, Gramado-Canela, Brasil; 2000-09-03 - 2000-09-08; . BibTeX |
| 4. | G. Hobler: "Modeling of Focused Ion Beam Milling"; Talk: Bell Laboratories, Lucent Technologies; 2000-07-31. BibTeX |
| 3. | W. Boxleitner, G. Hobler: "FIBSIM -- Dynamic Monte Carlo simulation of compositional and topography changes caused by focused ion beam milling"; Talk: 5th Interanional Conference Computer Simulation of Radiation Effects in Solids, Penn State University, USA; 2000-07-24 - 2000-07-28; . BibTeX |
| 2. | G. Hobler, G. Betz: "On the useful range of application of molecular dynamics simulations in the recoil interaction approximation"; Talk: 5th Interanional Conference Computer Simulation of Radiation Effects in Solids, Penn State University, USA; 2000-07-24 - 2000-07-28; . BibTeX |
| 1. | L. Palmetshofer, M. Gritsch, G. Hobler: "Range ot ion-implanted rare earth element in Si and Si02"; Poster: Materials Research Society Spring Meeting (MRS), STrasbourg, France; 2000-05-31 - 2000-06-02; . BibTeX |
| 8. | M. Kampl: "Investigating Hot-Carrier Effects using the Backward Monte Carlo Method"; Reviewer: H. Kosina, A. Garcia Loureiro, G. Hobler; Institut für Mikroelektronik, 2019, oral examination: 2019-04-05. BibTeX |
| 7. | S. Lindsey: "Computer Simulation of FIB Sputtering"; Reviewer: G. Hobler, P. Pichler; E362, 2015, oral examination: 2015-03-17. BibTeX |
| 6. | C. Ebm: "Simulation of ion beam induced etching and deposition"; Reviewer: G. Hobler, J. Melngailis; E362, 2010, oral examination: 2010-09-17. BibTeX |
| 5. | T. Zahel: "Modelling defect formation and evolution during SOI wafer fabrication"; Reviewer: G. Hobler, H. Cerva; Institut für Festkörperelektronik, 2009, oral examination: 2009-11-02. BibTeX |
| 4. | D. Kovac: "Multiscale Modeling of Ion Implantation Damage in Silicon"; Reviewer: G. Hobler, L. Palmetshofer; Institut für Festkörperelektronik, 2007, oral examination: 2007-04-24. BibTeX |
| 3. | H. Kim: "Design, Simulation and Fabrication of Micro/Nano Functional Structures Using ION Beams"; Reviewer: G. Hobler, H. Kosina; Institut für Festkörperelektronik, 2007, oral examination: 2007-04-20. BibTeX |
| 2. | G. Otto: "Multi-method Simulations and Transmission Electron Microscope Investigations of Ion Implantation Damage in Silicon"; Reviewer: G. Hobler, P. Pongratz; Institut für Festkörperelektronik, 2005, . BibTeX |
| 1. | G. Hobler: "Simulation der Ionenimplantation in ein-, zwei- und dreidimensionalen Strukturen"; Reviewer: S. Selberherr, W. Fallmann; Institut für Mikroelektronik, 1988, oral examination: 1988-11-23. BibTeX |
| 6. | T. Zahel: "Investigation of the isotope effect in hydrogen induced blistering of silicon using kinetic Monte Carlo Simulation"; Supervisor: G. Hobler; Institut für Festkörperelektronik, 2005, . BibTeX |
| 5. | G. Fehlmann: "Untersuchungen von Modellen für die Monte-Carlo-Simulation"; Supervisor: G. Hobler; Institut für Festkörperelektronik, 2000, . BibTeX |
| 4. | P. Lampacher: "Dram-Leseverstärker mit Mismatchkompensation der Entscheidertransistoren"; Supervisor: G. Hobler; Institut für Festkörperelektronik, 1999, . BibTeX |
| 3. | S. Halama: "Untersuchung der thermischen Oxidation von Silicium mit Hilfe molekulardynamischer Simulationsmethoden"; Supervisor: G. Hobler, S. Selberherr; Institut für Mikroelektronik, 1989, . BibTeX |
| 2. | K. Slama: "Simulation der Ionenimplantation von Bor in Siliziumeinkristallen bei niedrigen Energien"; Supervisor: S. Selberherr, G. Hobler; Institut für Mikroelektronik, 1988, . BibTeX |
| 1. | G. Hobler: "Monte-Carlo Simulation der Ionenimplantation"; Supervisor: S. Selberherr, E. Langer; Institut für Allgemeine Elektrotechnik und Elektronik, 1985, . BibTeX |
| 11. | S. Lindsey, G. Hobler, C. Rue, M. Maazouz: "Focused Ion Beam Simulation - Investigation of the Curtaining Effect in TEM Sample Preparation"; (2012), . BibTeX |
| 10. | T. Zahel, G. Hobler: "IMSIL-kLMC"; (2009), . BibTeX |
| 9. | T. Zahel, G. Hobler: "Kinetic Monte Carlo studies of Smart Cut technology in Si: Final report"; (2009), . BibTeX |
| 8. | P. Beck, G. Hobler, A. Köck, S. Rollet, E. Wachmann, M. Wind: "RADSI - Radiation Hardness of Silicon Nanostructures, Technical final report"; (2008), . BibTeX |
| 7. | T. Zahel, G. Hobler: "Kinetic Monte Carlo studies of Smart Cut technology in Si: Platelet model and influence of He damage on platelet formation"; (2008), . BibTeX |
| 6. | T. Zahel, G. Hobler: "Kinetic Monte Carlo studies of Smart Cut technology in Si: The influence of He damage on defects generated by H and He co-implantation"; (2008), . BibTeX |
| 5. | P. Beck, G. Hobler, E. Wachmann: "RADSI Progress Report"; (2007), . BibTeX |
| 4. | G. Hobler: "IMSIL Code Modification and Calibration for H inplantations into GaN"; (2007), . BibTeX |
| 3. | G. Hobler, D. Kovac: "Interim Report on FIBSIM Code Development"; (2007), . BibTeX |
| 2. | G. Hobler, T. Zahel: "Kinetic Monte Carlo studies of Smart Cut technology in Si"; (2007), . BibTeX |
| 1. | W. Boxleitner, G. Hobler: "High Quality Sample Operation for Nanometric Analysis and Testing Equipments"; (2000), . BibTeX |
| 1. | G. Hobler, M. Mastrapasqua, M.R. Pinto, E. Sangiorgi: "Monolithically integrated static random access memory device"; Patent: USA, No. 6144073; submitted: 2000-11-01, granted: 2000-11-07. BibTeX |