Publications Andreas Hössinger

114 records

Publications in Scientific Journals

31.   Lenz, C., Aguinsky, L. F., Hössinger, A., Weinbub, J. (2023).
A Complementary Topographic Feature Detection Algorithm Based on Surface Curvature for Three-Dimensional Level-Set Functions.
Journal of Scientific Computing, 94(3), 1–21. https://doi.org/10.1007/s10915-023-02133-5 (reposiTUm)

30.   Lenz, C., Manstetten, P., Aguinsky, L. F., Rodrigues, F., Hössinger, A., Weinbub, J. (2023).
Automatic Grid Refinement for Thin Material Layer Etching in Process TCAD Simulations.
Solid-State Electronics, 200, Article 108534. https://doi.org/10.1016/j.sse.2022.108534 (reposiTUm)

29.   Aguinsky, L. F., Souza Berti Rodrigues, F., Reiter, T., Klemenschits, X., Filipovic, L., Hössinger, A., Weinbub, J. (2023).
Modeling Incomplete Conformality During Atomic Layer Deposition in High Aspect Ratio Structures.
Solid-State Electronics, 201, Article 108584. https://doi.org/10.1016/j.sse.2022.108584 (reposiTUm)

28.   Lenz, C., Toifl, A., Quell, M., Rodrigues, F., Hössinger, A., Weinbub, J. (2022).
Curvature Based Feature Detection for Hierarchical Grid Refinement in TCAD Topography Simulations.
Solid-State Electronics, 191(108258), 108258. https://doi.org/10.1016/j.sse.2022.108258 (reposiTUm)

27.   Aguinsky, L. F., Rodrigues, F., Wachter, G., Trupke, M., Schmid, U., Hössinger, A., Weinbub, J. (2022).
Phenomenological Modeling of Low-Bias Sulfur Hexafluoride Plasma Etching of Silicon.
Solid-State Electronics, 191(108262), 108262. https://doi.org/10.1016/j.sse.2022.108262 (reposiTUm)

26.   Toifl, A., Rodrigues, F., Aguinsky, L. F., Hössinger, A., Weinbub, J. (2021).
Continuum Level-Set Model for Anisotropic Wet Etching of Patterned Sapphire Substrates.
Semiconductor Science and Technology, 36(4), 045016. https://doi.org/10.1088/1361-6641/abe49b (reposiTUm)

25.   Aguinsky, L. F., Wachter, G., Manstetten, P., Rodrigues, F., Trupke, M., Schmid, U., Hössinger, A., Weinbub, J. (2021).
Modeling and Analysis of Sulfur Hexafluoride Plasma Etching for Silicon Microcavity Resonators.
Journal of Micromechanics and Microengineering, 31(12), 125003. https://doi.org/10.1088/1361-6439/ac2bad (reposiTUm)

24.   Quell, M., Suvorov, V., Hössinger, A., Weinbub, J. (2021).
Parallel Velocity Extension for Level-Set-Based Material Flow on Hierarchical Meshes in Process TCAD.
IEEE Transactions on Electron Devices, 68(11), 5430–5437. https://doi.org/10.1109/ted.2021.3087451 (reposiTUm)

23.   Quell, M., Diamantopoulos, G., Hössinger, A., Weinbub, J. (2021).
Shared-Memory Block-Based Fast Marching Method for Hierarchical Meshes.
Journal of Computational and Applied Mathematics, 392(113488), 113488. https://doi.org/10.1016/j.cam.2021.113488 (reposiTUm)

22.   Toifl, A., Quell, M., Klemenschits, X., Manstetten, P., Hössinger, A., Selberherr, S., Weinbub, J. (2020).
The Level-Set Method for Multi-Material Wet Etching and Non-Planar Selective Epitaxy.
IEEE Access, 8, 115406–115422. https://doi.org/10.1109/access.2020.3004136 (reposiTUm)

21.   Diamantopoulos, G., Hössinger, A., Selberherr, S., Weinbub, J. (2019).
A Shared Memory Parallel Multi-Mesh Fast Marching Method for Re-Distancing.
Advances in Computational Mathematics, 45(4), 2029–2045. https://doi.org/10.1007/s10444-019-09683-z (reposiTUm)

20.   Toifl, A., Simonka, V., Hössinger, A., Selberherr, S., Grasser, T., Weinbub, J. (2019).
Simulation of the Effects of Postimplantation Annealing on Silicon Carbide DMOSFET Characteristics.
IEEE Transactions on Electron Devices, 66(7), 3060–3065. https://doi.org/10.1109/ted.2019.2916929 (reposiTUm)

19.   Woerle, J., Šimonka, V., Müller, E., Hössinger, A., Sigg, H., Selberherr, S., Weinbub, J., Camarda, M., Grossner, U. (2019).
Surface Morphology of 4h-SiC After Thermal Oxidation.
Materials Science Forum, 963, 180–183. https://doi.org/10.4028/www.scientific.net/msf.963.180 (reposiTUm)

18.   Gnam, L., Manstetten, P., Hössinger, A., Selberherr, S., Weinbub, J. (2018).
Accelerating Flux Calculations Using Sparse Sampling.
Micromachines, 9(11), 1–18. https://doi.org/10.3390/mi9110550 (reposiTUm)

17.   Simonka, V., Hössinger, A., Weinbub, J., Selberherr, S. (2018).
Empirical Model for Electrical Activation of Aluminum- And Boron-Implanted Silicon Carbide.
IEEE Transactions on Electron Devices, 65(2), 674–679. https://doi.org/10.1109/ted.2017.2786086 (reposiTUm)

16.   Šimonka, V., Hössinger, A., Weinbub, J., Selberherr, S. (2018).
Modeling and Simulation of Electrical Activation of Acceptor-Type Dopants in Silicon Carbide.
Materials Science Forum, 924, 192–195. https://doi.org/10.4028/www.scientific.net/msf.924.192 (reposiTUm)

15.   Šimonka, V., Toifl, A., Hössinger, A., Selberherr, S., Weinbub, J. (2018).
Transient Model for Electrical Activation of Aluminium and Phosphorus-Implanted Silicon Carbide.
Journal of Applied Physics, 123(23), 235701. https://doi.org/10.1063/1.5031185 (reposiTUm)

14.   Šimonka, V., Nawratil, G., Hössinger, A., Weinbub, J., Selberherr, S. (2017).
Anisotropic Interpolation Method of Silicon Carbide Oxidation Growth Rates for Three-Dimensional Simulation.
Solid-State Electronics, 128, 135–140. https://doi.org/10.1016/j.sse.2016.10.032 (reposiTUm)

13.   Manstetten, P., Filipovic, L., Hössinger, A., Weinbub, J., Selberherr, S. (2017).
Framework to Model Neutral Particle Flux in Convex High Aspect Ratio Structures Using One-Dimensional Radiosity.
Solid-State Electronics, 128, 141–147. https://doi.org/10.1016/j.sse.2016.10.029 (reposiTUm)

12.   Šimonka, V., Hössinger, A., Weinbub, J., Selberherr, S. (2017).
ReaxFF Reactive Molecular Dynamics Study of Orientation Dependence of Initial Silicon Carbide Oxidation.
The Journal of Physical Chemistry A, 121(46), 8791–8798. https://doi.org/10.1021/acs.jpca.7b08983 (reposiTUm)

11.   Manstetten, P., Weinbub, J., Hössinger, A., Selberherr, S. (2017).
Using Temporary Explicit Meshes for Direct Flux Calculation on Implicit Surfaces.
Procedia Computer Science, 108, 245–254. https://doi.org/10.1016/j.procs.2017.05.067 (reposiTUm)

10.   Weinbub, J., Hössinger, A. (2016).
Comparison of the Parallel Fast Marching Method, the Fast Iterative Method, and the Parallel Semi-Ordered Fast Iterative Method.
Procedia Computer Science, 80, 2271–2275. https://doi.org/10.1016/j.procs.2016.05.408 (reposiTUm)

9.   Šimonka, V., Hössinger, A., Weinbub, J., Selberherr, S. (2016).
Growth Rates of Dry Thermal Oxidation of 4h-Silicon Carbide.
Journal of Applied Physics, 120(13), 135705. https://doi.org/10.1063/1.4964688 (reposiTUm)

8.   Weinbub, J., Hössinger, A. (2014).
Accelerated Redistancing for Level Set-Based Process Simulations With the Fast Iterative Method.
Journal of Computational Electronics, 13(4), 877–884. https://doi.org/10.1007/s10825-014-0604-x (reposiTUm)

7.   Wessner, W., Cervenka, J., Heitzinger, C., Hossinger, A., Selberherr, S. (2006).
Anisotropic Mesh Refinement for the Simulation of Three-Dimensional Semiconductor Manufacturing Processes.
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 25(10), 2129–2139. https://doi.org/10.1109/tcad.2005.862750 (reposiTUm)

6.  C. Heitzinger, A. Hössinger, S. Selberherr:
"An Algorithm for Smoothing Three-Dimensional Monte Carlo Ion Implantation Simulation Results";
Mathematics and Computers in Simulation, 66 (2004), 2-3; 219 - 230. https://doi.org/10.1016/j.matcom.2003.11.010

5.  C. Heitzinger, A. Hössinger, S. Selberherr:
"On Smoothing Three-Dimensional Monte Carlo Ion Implantation Simulation Results";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 22 (2003), 7; 879 - 883. https://doi.org/10.1109/TCAD.2003.814259

4.  T. Binder, A. Hössinger, S. Selberherr:
"Rigorous Integration of Semiconductor Process and Device Simulators";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 22 (2003), 9; 1204 - 1214. https://doi.org/10.1109/TCAD.2003.816219

3.  T Fahringer, P. Blaha, A. Hössinger, J. Luitz, E. Mehofer, H. Moritsch, B. Scholz:
"Development and Performance Analysis of Real-World Applications for Distributed and Parallel Architectures ";
Concurrency and Computation: Practice and Experience, 13 (2001), 10; 1 - 17.

2.  A. Burenkov, K. Tietzel, A. Hössinger, J. Lorenz, H. Ryssel, S. Selberherr:
"A Computationally Efficient Method for Three-Dimensional Simulation of Ion Implantation";
IEICE Transactions on Electronics, E83-C (2000), 8; 1259 - 1266.

1.  A. Hössinger, E. Langer, S. Selberherr:
"Parallelization of a Monte Carlo Ion Implantation Simulator";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 19 (2000), 5; 560 - 567. https://doi.org/10.1109/43.845080

Contributions to Books

8.   Lenz, C., Scharinger, A., Manstetten, P., Hössinger, A., Weinbub, J. (2021).
A Novel Surface Mesh Simplification Method for Flux-Dependent Topography Simulations of Semiconductor Fabrication Processes.
In M. van Beurden, N. Budko, W. Schilders (Eds.), Scientific Computing in Electrical Engineering (pp. 73–81). Springer. https://doi.org/10.1007/978-3-030-84238-3_8 (reposiTUm)

7.  L.F. Aguinsky, G. Wachter, F. Rodrigues, A. Scharinger, A. Toifl, M. Trupke, U. Schmid, A. Hössinger, J. Weinbub:
"Feature-Scale Modeling of Low-Bias SF6 Plasma Etching of Si";
in: "Proceedings of the 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", B. Cretu (ed.); IEEE, 2021, 1 - 4. https://doi.org/10.1109/EuroSOI-ULIS53016.2021.9560685

6.   Quell, M., Diamantopoulos, G., Hössinger, A., Selberherr, S., Weinbub, J. (2020).
Parallel Correction for Hierarchical Re-Distancing Using the Fast Marching Method.
In I. Dimov, S. Fidanova (Eds.), Advances in High Performance Computing (pp. 438–451). Springer International Publishing. https://doi.org/10.1007/978-3-030-55347-0_37 (reposiTUm)

5.   Quell, M., Manstetten, P., Hössinger, A., Selberherr, S., Weinbub, J. (2020).
Parallelized Construction of Extension Velocities for the Level-Set Method.
In R. Wyrzykowski, E. Deelman, J. Dongarra, K. Karczewski (Eds.), Parallel Processing and Applied Mathematics (pp. 348–358). Springer International Publishing. https://doi.org/10.1007/978-3-030-43229-4_30 (reposiTUm)

4.   Gnam, L., Manstetten, P., Hössinger, A., Selberherr, S., Weinbub, J. (2019).
Accelerating Flux Calculations Using Sparse Sampling.
In L. Filipovic, T. Grasser (Eds.), Miniaturized Transistors (pp. 176–192). MDPI. https://doi.org/10.3390/mi9110550 (reposiTUm)

3.   Manstetten, P., Gnam, L., Hössinger, A., Selberherr, S., Weinbub, J. (2018).
Sparse Surface Speed Evaluation on a Dynamic Three-Dimensional Surface Using an Iterative Partitioning Scheme.
In Y. Shi, H. Fu, Y. Tian, V. V. Krzhizhanovskaya, M. H. Lees, J. Dongarra, P. M. A. Sloot (Eds.), Lecture Notes in Computer Science (pp. 694–707). Springer International Publishing. https://doi.org/10.1007/978-3-319-93698-7_53 (reposiTUm)

2.   Wittmann, R., Uppal, S., Hoessinger, A., Cervenka, J., Selberherr, S. (2006).
A Study of Boron Implantation Into High Ge Content SiGe Alloys.
In D. Harame, J. Boquet, M. Caymax, J. Cressler, H. Iwai, S. Koester, G. Masini, J. Murota, A. Reznicek, K. Rim, B. Tillack, S. Zaima (Eds.), ECS Transactions (pp. 667–676). ECS Transactions. https://doi.org/10.1149/1.2355862 (reposiTUm)

1.   Wittmann, R., Hössinger, A., Selberherr, S. (2004).
Calibration for the Monte Carlo Simulation of Ion Implantation in Relaxed SiGe.
In SiGe: Materials, Processing, and Devices (pp. 181–192). ECS Transactions. (reposiTUm)

Talks and Poster Presentations (with Proceedings-Entry)

68.   Reiter, T., Toifl, A., Hössinger, A., Filipovic, L. (2023).
Modeling Oxide Regrowth During Selective Etching in Vertical 3D NAND Structures.
In 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 85–88), Kobe, Japan. https://doi.org/10.23919/SISPAD57422.2023.10319506 (reposiTUm)

67.   Filipovic, L., Reiter, T., Klemenschits, X., Leroch, S., Stella, R., Baumgartner, O., Hössinger, A. (2023).
Process Simulation in Micro- And Nano-Electronics.
In Book of abstracts of the International Workshop on Computational Nanotechnology 2023 (pp. 38–39), Barcelona, Spain. (reposiTUm)

66.   Rodrigues, F., Aguinsky, L., Hössinger, A., Weinbub, J. (2022).
3D Feature-Scale Modeling of Highly Selective Fluorocarbon Plasma Etching.
In SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet (pp. 32–33), Granada, Spain. (reposiTUm)

65.   Lenz, C., Manstetten, P., Hössinger, A., Weinbub, J. (2022).
Automatic Grid Refinement for Thin Material Layer Etching in Process TCAD Simulations.
In SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet (pp. 117–118), Granada, Spain. (reposiTUm)

64.   Aguinsky, L., Rodrigues, F., Klemenschits, X., Filipovic, L., Hössinger, A., Weinbub, J. (2022).
Modeling Non-Ideal Conformality During Atomic Layer Deposition in High Aspect Ratio Structures.
In Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022) (pp. 40–41), Granada, Spain. (reposiTUm)

63.   Quell, M., Hössinger, A., Weinbub, J. (2022).
Shared-Memory Fast Marching Method for Re-Distancing on Hierarchical Meshes.
In Book of Abstracts of the Austrian-Slovenian HPC Meeting (ASHPC) (p. 1), Maribor, Slovenia. https://doi.org/10.25365/phaidra.337 (reposiTUm)

62.   Lenz, C., Toifl, A., Hössinger, A., Weinbub, J. (2021).
Curvature Based Feature Detection for Hierarchical Grid Refinement in TCAD Topography Simulations.
In 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS). https://doi.org/10.1109/eurosoi-ulis53016.2021.9560690 (reposiTUm)

61.  C. Lenz, A. Toifl, A. Hössinger, J. Weinbub:
"Curvature-Based Feature Detection for Hierarchical Grid Refinement in Epitaxial Growth Simulations";
Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France; 2021-09-01 - 2021-09-03; in: "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2021), 109 - 110.

60.   Lenz, C., Scharinger, A., Quell, M., Manstetten, P., Hössinger, A., Weinbub, J. (2021).
Evaluating Parallel Feature Detection Methods for Implicit Surfaces.
In Book of Abstracts of the Austrian-Slovenian HPC Meeting (ASHPC) (p. 31), Maribor, Slovenia. (reposiTUm)

59.   Rodrigues, F., Aguinsky, L., Toifl, A., Hössinger, A., Weinbub, J. (2021).
Feature Scale Modeling of Fluorocarbon Plasma Etching for via Structures Including Faceting Phenomena.
In Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN 2021) (pp. 101–102). (reposiTUm)

58.   Aguinsky, L., Wachter, G., Scharinger, A., Rodrigues, F., Toifl, A., Trupke, M., Schmid, U., Hössinger, A., Weinbub, J. (2021).
Feature-Scale Modeling of Low-Bias SF₆ Plasma Etching of Si.
In 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS) (pp. 1–4), Caen, France. https://doi.org/10.1109/eurosoi-ulis53016.2021.9560685 (reposiTUm)

57.   Rodrigues, F., Aguinsky, L., Toifl, A., Scharinger, A., Hössinger, A., Weinbub, J. (2021).
Surface Reaction and Topography Modeling of Fluorocarbon Plasma Etching.
In 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Dallas, TX, United States. https://doi.org/10.1109/sispad54002.2021.9592583 (reposiTUm)

56.   Lenz, C., Scharinger, A., Hössinger, A., Weinbub, J. (2020).
A Novel Surface Mesh Simplification Method for Flux-Dependent Topography Simulations of Semiconductor Fabrication Processes.
In Book of Abstracts of the International Conferences on Scientific Computing in Electrical Engineering (SCEE) (pp. 99–100), Eindhoven, Netherlands. (reposiTUm)

55.   Scharinger, A., Manstetten, P., Hössinger, A., Weinbub, J. (2020).
Generative Model Based Adaptive Importance Sampling for Flux Calculations in Process TCAD.
In 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan. https://doi.org/10.23919/sispad49475.2020.9241615 (reposiTUm)

54.   Quell, M., Diamantopoulos, G., Hössinger, A., Weinbub, J. (2020).
Shared-Memory Block-Based Fast Marching Method for Hierarchical Meshes.
In Proceedings of the 7th European Seminar on Computing (ESCO 2020), Pilsen, Czechia. (reposiTUm)

53.   Aguinsky, L., Manstetten, P., Hössinger, A., Selberherr, S., Weinbub, J. (2019).
A Mathematical Extension to Knudsen Diffusion Including Direct Flux and Accurate Geometric Description.
In Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN 2019) (pp. 109–110), Evanston, IL, United States. (reposiTUm)

52.   Aguinsky, L., Manstetten, P., Hössinger, A., Selberherr, S., Weinbub, J. (2019).
An Extended Knudsen Diffusion Model for Aspect Ratio Dependent Atomic Layer Etching.
In Abstracts of the International Conference on Atomic Layer Deposition (ALD) Featuring the International Workshop on Atomic Layer Etching (ALE) (p. 109), Bellevue, WA, USA. (reposiTUm)

51.   Hössinger, A., Manstetten, P., Diamantopoulos, G., Quell, M., Weinbub, J. (2019).
High Performance Computing Aspects in Semiconductor Process Simulation.
In Book of Abstracts of the Workshop on High Performance TCAD (WHPTCAD) (pp. 3–4), Chicago, IL, USA. (reposiTUm)

50.   Manstetten, P., Diamantopoulos, G., Gnam, L., Aguinsky, L., Quell, M., Toifl, A., Scharinger, A., Hössinger, A., Ballicchia, M., Nedjalkov, M., Weinbub, J. (2019).
High Performance TCAD: From Simulating Fabrication Processes to Wigner Quantum Transport.
In Book of Abstracts of the Workshop on High Performance TCAD (WHPTCAD) (p. 13), Chicago, IL, USA. (reposiTUm)

49.   Toifl, A., Quell, M., Hössinger, A., Babayan, A., Selberherr, S., Weinbub, J. (2019).
Novel Numerical Dissipation Scheme for Level-Set Based Anisotropic Etching Simulations.
In 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy. https://doi.org/10.1109/sispad.2019.8870443 (reposiTUm)

48.   Quell, M., Diamantopoulos, G., Hössinger, A., Selberherr, S., Weinbub, J. (2019).
Parallelized Bottom-Up Correction in Hierarchical Re-Distancing for Topography Simulation.
In Procedings of the High Performance Computing Conference (HPC) (p. 45), Borovets, Bulgaria. (reposiTUm)

47.   Quell, M., Manstetten, P., Hössinger, A., Selberherr, S., Weinbub, J. (2019).
Parallelized Construction of Extension Velocities for the Level-Set Method.
In Proceedings of the International Conference on Parallel Processing and Applied Mathematics (PPAM) (p. 42), Bialystok, Poland. (reposiTUm)

46.   Quell, M., Toifl, A., Hössinger, A., Selberherr, S., Weinbub, J. (2019).
Parallelized Level-Set Velocity Extension Algorithm for Nanopatterning Applications.
In 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy. https://doi.org/10.1109/sispad.2019.8870482 (reposiTUm)

45.   Diamantopoulos, G., Manstetten, P., Gnam, L., Simonka, V., Aguinsky, L., Quell, M., Toifl, A., Hössinger, A., Weinbub, J. (2019).
Recent Advances in High Performance Process TCAD.
In CSE19 Abstracts (p. 335), Atlanta, GA, USA. (reposiTUm)

44.   Aguinsky, L., Manstetten, P., Hössinger, A., Selberherr, S., Weinbub, J. (2019).
Three-Dimensional TCAD for Atomic Layer Processing.
In Book of Abstracts of the Workshop on High Performance TCAD (WHPTCAD) (p. 5), Chicago, IL, USA. (reposiTUm)

43.   Diamantopoulos, G., Hössinger, A., Selberherr, S., Weinbub, J. (2018).
A Shared-Memory Parallel Multi-Mesh Fast Marching Method for Full and Narrow Band Re-Distancing.
In Proc. 6th European Seminar on Computing (p. 1), Pilsen, Czech Republic. (reposiTUm)

42.   Simonka, V., Hössinger, A., Selberherr, S., Weinbub, J. (2018).
Investigation of Post-Implantation Annealing for Phosphorus-Implanted 4h-Silicon Carbide.
In Proceedings of the International Conference on Microelectronic Devices and Technologies (MicDAT) (pp. 42–44), Barcelona, Spain. (reposiTUm)

41.   Toifl, A., Simonka, V., Hössinger, A., Selberherr, S., Weinbub, J. (2018).
Steady-State Empirical Model for Electrical Activation of Silicon-Implanted Gallium Nitride.
In 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, TX, United States. https://doi.org/10.1109/sispad.2018.8551728 (reposiTUm)

40.  J. Woerle, V. Simonka, E. Müller, A. Hössinger, H. Sigg, S. Selberherr, J. Weinbub, M. Camarda, U. Grossner:
"Surface Morphology of 4H-SiC After Thermal Oxidation";
Talk: European Conference on Silicon Carbide and Related Materials (ECSCRM), Birmingham, UK; 2018-09-02 - 2018-09-06; in: "Proceedings of the European Conference on Silicon Carbide and Related Materials (ECSCRM)", (2018).

39.   Manstetten, P., Hössinger, A., Weinbub, J., Selberherr, S. (2017).
Accelerated Direct Flux Calculations Using an Adaptively Refined Icosahedron.
In 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan. https://doi.org/10.23919/sispad.2017.8085267 (reposiTUm)

38.   Manstetten, P., Simonka, V., Diamantopoulos, G., Gnam, L., Makarov, A., Hössinger, A., Weinbub, J. (2017).
Computational and Numerical Challenges in Semiconductor Process Simulation.
In CSE17 Abstracts (p. 46), Atlanta, GA, USA. (reposiTUm)

37.   Diamantopoulos, G., Weinbub, J., Hössinger, A., Selberherr, S. (2017).
Evaluation of the Shared-Memory Parallel Fast Marching Method for Re-Distancing Problems.
In 2017 17th International Conference on Computational Science and Its Applications (ICCSA), Trieste, Italy. https://doi.org/10.1109/iccsa.2017.7999648 (reposiTUm)

36.  V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr:
"Modeling and Simulation of Electrical Activation of Acceptor-Type Dopants in Silicon Carbide";
Poster: International Conference on Silicon Carbide and Related Materials (ICSCRM), Washington D.C., USA; 2017-09-17 - 2017-09-22; in: "Proceedings of the International Conference on Silicon Carbide and Related Materials (ICSCRM)", (2017).

35.   Simonka, V., Hössinger, A., Weinbub, J., Selberherr, S. (2017).
Modeling of Electrical Activation Ratios of Phosphorus and Nitrogen Doped Silicon Carbide.
In 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan. https://doi.org/10.23919/sispad.2017.8085280 (reposiTUm)

34.   Gnam, L., Weinbub, J., Hössinger, A., Selberherr, S. (2017).
Towards a Metric for an Automatic Hull Mesh Coarsening Strategy.
In Proceedings of the Vienna Young Scientists Symposium (pp. 118–119), Wien, Austria. (reposiTUm)

33.   Simonka, V., Nawratil, G., Hössinger, A., Weinbub, J., Selberherr, S. (2016).
Direction Dependent Three-Dimensional Silicon Carbide Oxidation Growth Rate Calculations.
In 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS). https://doi.org/10.1109/ulis.2016.7440094 (reposiTUm)

32.   Simonka, V., Nawratil, G., Hössinger, A., Weinbub, J., Selberherr, S. (2016).
Geometrical Aspects of Three-Dimensional Silicon Carbide Oxidation Growth Rate Modeling.
In Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) (pp. 128–129), Bologna, Italy. (reposiTUm)

31.   Manstetten, P., Filipovic, L., Hössinger, A., Weinbub, J., Selberherr, S. (2016).
Modeling Neutral Particle Flux in High Aspect Ratio Holes Using a One-Dimensional Radiosity Approach.
In Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) (pp. 68–69), Bologna, Italy. (reposiTUm)

30.   Weinbub, J., Hössinger, A. (2016).
Shared-Memory Parallelization of the Fast Marching Method Using an Overlapping Domain-Decomposition Approach.
In 24th High Performance Computing Symposium, Orlando, FL, USA. https://doi.org/10.22360/springsim.2016.hpc.052 (reposiTUm)

29.   Simonka, V., Hössinger, A., Weinbub, J., Selberherr, S. (2016).
Three-Dimensional Growth Rate Modeling and Simulation of Silicon Carbide Thermal Oxidation.
In 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nuremberg, Germany. https://doi.org/10.1109/sispad.2016.7605190 (reposiTUm)

28.   Manstetten, P., Filipovic, L., Hössinger, A., Weinbub, J., Selberherr, S. (2016).
Using One-Dimensional Radiosity to Model Neutral Particle Flux in High Aspect Ratio Holes.
In 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS). https://doi.org/10.1109/ulis.2016.7440067 (reposiTUm)

27.   Manstetten, P., Filipovic, L., Hössinger, A., Weinbub, J., Selberherr, S. (2016).
Using One-Dimensional Radiosity to Model Neutral Flux in Convex High Aspect Ratio Structures.
In 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nuremberg, Germany. https://doi.org/10.1109/sispad.2016.7605198 (reposiTUm)

26.   Suvorov, V., Hössinger, A., Djuric, Z. (2006).
A Novel Approach to Three-Dimensional Semiconductor Process Simulation: Application to Thermal Oxidation.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 3–4), Urbana-Champaign, IL, USA. (reposiTUm)

25.   Wittmann, R., Uppal, S., Hössinger, A., Cervenka, J., Selberherr, S. (2006).
A Study of Boron Implantation Into High Ge Content SiGe Alloys.
In 210th ECS Meeting (p. 1), Cancun. (reposiTUm)

24.   Wittmann, R., Hössinger, A., Cervenka, J., Uppal, S., Selberherr, S. (2006).
Monte Carlo Simulation of Boron Implantation Into (100) Germanium.
In 2006 International Conference on Simulation of Semiconductor Processes and Devices, Monterey, California, United States. https://doi.org/10.1109/sispad.2006.282914 (reposiTUm)

23.   Wittmann, R., Hössinger, A., Selberherr, S. (2005).
Monte Carlo Simulation of Ion Implantation for Doping of Strained Silicon MOSFETs.
In 2005 International Conference On Simulation of Semiconductor Processes and Devices, Tokyo, Japan. https://doi.org/10.1109/sispad.2005.201505 (reposiTUm)

22.  W. Wessner, Ch. Hollauer, A. Hössinger, S. Selberherr:
"Anisotropic Laplace Refinement for Three-Dimensional Oxidation Simulation";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", Springer, (2004), ISBN: 3211224688; 165 - 168. https://doi.org/10.1007/978-3-7091-0624-2_39

21.  R. Wittmann, A. Hössinger, S. Selberherr:
"Calibration for the Monte Carlo Simulation of Ion Implantation in Relaxed SiGe";
Talk: Meeting of the Electrochemical Society, SiGe and Germanium: Materials, Processing, and Devices, Honolulu; 2004-10-03 - 2004-10-08; in: "206th ECS Meeting", (2004), ISBN: 1-56677-420-9; 181 - 192.

20.  A. Hössinger, R. Minixhofer, S. Selberherr:
"Full Three-Dimensional Analysis of a Non-Volatile Memory Cell";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", Springer, (2004), ISBN: 3211224688; 129 - 132. https://doi.org/10.1007/978-3-7091-0624-2_31

19.  R. Wittmann, A. Hössinger, S. Selberherr:
"Monte Carlo Simulation of Ion Implantation in Silicon-Germanium Alloys";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", Springer, (2004), ISBN: 3211224688; 169 - 172. https://doi.org/10.1007/978-3-7091-0624-2_40

18.  A. Hössinger, J. Cervenka, S. Selberherr:
"A Multistage Smoothing Algorithm for Coupling Cellular and Polygonal Datastructures";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 2003-09-03 - 2003-09-05; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2003), ISBN: 0-7803-7826-1; 259 - 262. https://doi.org/10.1109/SISPAD.2003.1233686

17.  C. Heitzinger, A. Hössinger, S. Selberherr:
"An Algorithm for Smoothing Three-Dimensional Monte Carlo Ion Implantation Simulation Results";
Talk: International Symposium on Mathematical Modeling (MATHMOD), Wien; 2003-02-05 - 2003-02-07; in: "4th IMACS Symposium on Mathematical Modelling", (2003), ISBN: 3-901608-24-9; 702 - 711.

16.  W. Wessner, H. Ceric, C. Heitzinger, A. Hössinger, S. Selberherr:
"Anisotropic Mesh Adaption Governed by a Hessian Matrix Metric";
Talk: European Simulation Symposium (ESS), Delft; 2003-10-26 - 2003-10-29; in: "Simulation in Industry, 15th European Simulation Symposium", (2003), ISBN: 3-936150-28-1; 41 - 46.

15.  W. Wessner, A. Hössinger, S. Selberherr:
"Anisotropic Mesh Refinement for Three-Dimensional Diffusion Simulation";
Poster: Informationstagung Mikroelektronik (ME), Wien; 2003-10-01 - 2003-10-02; in: "Beiträge der Informationstagung Mikroelektronik 2003", (2003), ISBN: 3-85133-030-7; 523 - 528.

14.  J. Cervenka, A. Hössinger, R. Minixhofer, T. Grasser, S. Selberherr:
"Dreidimensionale Modellierung Elektronischer Bauteile";
Poster: Informationstagung Mikroelektronik (ME), Wien; 2003-10-01 - 2003-10-02; in: "Beiträge der Informationstagung Mikroelektronik 2003", (2003), ISBN: 3-85133-030-7; 377 - 382.

13.  W. Wessner, C. Heitzinger, A. Hössinger, S. Selberherr:
"Error Estimated Driven Anisotropic Mesh Refinement for Three-Dimensional Diffusion Simulation";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 2003-09-03 - 2003-09-05; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2003), ISBN: 0-7803-7826-1; 109 - 112. https://doi.org/10.1109/SISPAD.2003.1233649

12.  R. Wittmann, A. Hössinger, S. Selberherr:
"Improvement of the Statistical Accuracy for the Three-Dimensional Monte Carlo Simulation of Ion Implantation";
Talk: European Simulation Symposium (ESS), Delft; 2003-10-26 - 2003-10-29; in: "Simulation in Industry, 15th European Simulation Symposium", (2003), ISBN: 3-936150-28-1; 35 - 40.

11.  H. Ceric, A. Hössinger, T. Binder, S. Selberherr:
"Modeling of Segregation on Material Interfaces by Means of the Finite Element Method";
Talk: International Symposium on Mathematical Modeling (MATHMOD), Wien; 2003-02-05 - 2003-02-07; in: "4th IMACS Symposium on Mathematical Modelling", (2003), ISBN: 3-901608-24-9; 139 - 145.

10.  R. Wittmann, A. Hössinger, S. Selberherr:
"Statistical Analysis for the Three-Dimensional Monte Carlo Simulation of Ion Implantation";
Talk: Industrial Simulation Conference (ISC), Valencia; 2003-06-09 - 2003-06-11; in: "Industrial Simulation Conference 2003", (2003), ISBN: 90-77381-03-1; 159 - 163.

9.  T. Binder, H. Ceric, A. Hössinger, S. Selberherr:
"A Strategy to Enforce the Discrete Minimax Principle on Finite Element Meshes";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 2002-09-04 - 2002-09-06; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5; 183 - 186. https://doi.org/10.1109/SISPAD.2002.1034547

8.  A. Hössinger, T. Binder, W. Pyka, S. Selberherr:
"Advanced Hybrid Cellular Based Approach for Three-Dimensional Etching and Deposition Simulation";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; 424 - 427. https://doi.org/10.1007/978-3-7091-6244-6_98

7.  J. Cervenka, M. Knaipp, A. Hössinger, S. Selberherr:
"Green's Function Approach for Three-Dimensional Diffusion Simulation of Industrial High Voltage Applications";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; 408 - 411. https://doi.org/10.1007/978-3-7091-6244-6_94

6.  A. Hössinger, E. Langer:
"Parallel Monte Carlo Simulation of Ion Implantation";
Talk: International Conference on Ion Implantation Technology, Cork (invited); 2000-09-17 - 2000-09-22; in: "Proceedings 13th Intl. Conf. on Ion Implantation Technology", (2000), 203 - 208.

5.  A. Burenkov, K. Tietzel, A. Hössinger, J. Lorenz, H. Ryssel, S. Selberherr:
"A Computationally Efficient Method for Three-Dimensional Simulation of Ion Implantation";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1999), ISBN: 4-930813-98-0; 55 - 58. https://doi.org/10.1109/SISPAD.1999.799258

4.  A. Hössinger, S. Selberherr:
"Accurate Three-Dimensional Simulation of Damage Caused by Ion Implantation";
Talk: International Conference on Modeling and Simulation of Microsystems (MSM), San Juan; 1999-04-19 - 1999-04-21; in: "Proceedings Intl. Conf. on Modeling and Simulation of Microsystems", (1999), ISBN: 0-9666135-4-6; 363 - 366.

3.  A. Hössinger, M. Radi, B. Scholz, T. Fahringer, E. Langer, S. Selberherr:
"Parallelization of a Monte-Carlo Ion Implantation Simulator for Three-Dimensional Crystalline Structures";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1999), ISBN: 4-930813-98-0; 103 - 106. https://doi.org/10.1109/SISPAD.1999.799271

2.  A. Hössinger, E. Langer, S. Selberherr:
"Performance Optimization of a Parallelized Three-Dimensional Monte-Carlo Ion Implantation Simulator";
Talk: European Simulation Symposium (ESS), Erlangen; 1999-10-26 - 1999-10-28; in: "Proceedings European Simulation Symposium", (1999), ISBN: 1-56555-177-x; 649 - 651.

1.  A. Hössinger, S. Selberherr, M. Kimura, I. Nomachi, S. Kusanagi:
"Three-Dimensional Monte-Carlo Ion Implantation Simulation for Molecular Ions";
Talk: Symposium on Process Physics and Modeling in Semiconductor Technology, Seattle; 1999-05-05 - 1999-05-06; in: "Proceedings Symp. on Process Physics and Modeling in Semiconductor Technology", Electrochemical Society, 99-2 (1999), ISBN: 1-56677-224-9; 18 - 25.

Doctor's Theses (authored and supervised)

1.   Hössinger, A. (2000).
Simulation of Ion Implantation for ULSI Technology
Technische Universität Wien. (reposiTUm)

Diploma and Master Theses (authored and supervised)

2.   Heinzl, R. (2003).
A Three Dimensional Analytical Ion Implantation Tool Using the Wafer-State-Server
Technische Universität Wien. (reposiTUm)

1.   Silnusek, F. (2002).
Molecular Dynamic Simulation of Self-Annealing Effects During Ion Implantation
Technische Universität Wien. (reposiTUm)

Scientific Reports

4.   Gehring, A., Heitzinger, C., Hössinger, A., Ungersböck, S. E., Wessner, W., Selberherr, S. (2003).
VISTA Status Report December 2003.
(reposiTUm)

3.   Grasser, T., Gritsch, M., Heitzinger, C., Hössinger, A., Selberherr, S. (2001).
VISTA Status Report December 2001.
(reposiTUm)

2.   Grasser, T., Hössinger, A., Kosik, R., Mlekus, R., Pyka, W., Stockinger, M., Selberherr, S. (1999).
VISTA Status Report December 1999.
(reposiTUm)

1.   Grasser, T., Hössinger, A., Kirchauer, H., Knaipp, M., Martins, R., Plasun, R., Rottinger, M., Schrom, G., Selberherr, S. (1997).
VISTA Status Report December 1997.
(reposiTUm)