Publications Yury Illarionov
89 records
| 1. | Yu. Illarionov: "Tunnel Carrier Transport and Related Physical Phenomena in Gold - Calcium Fluoride - Silicon (111) Structures"; Typography of St-Petersburg State Polytechnical University, St. Petersburg, (2014), 20 page(s) . BibTeX |
| 37. | T. Knobloch, U. Burkay, Yu. Illarionov, Z. Wang, M. Otto, L. Filipovic, M. Waltl, D. Neumaier, M. Lemme, T. Grasser: "Improving Stability in Two-Dimensional Transistors with Amorphous Gate Oxides by Fermi-Level Tuning"; Nature Electronics, 5, (2022), 356 - 366 doi:10.1038/s41928-022-00768-0. BibTeX |
| 36. | V. Sverdlov, H. Seiler, A.-M. El-Sayed, Yu. Illarionov, H. Kosina: "Edge Modes and Their Conductance in Narrow Nanoribbons of 2D Materials in a Topological Phase"; Solid-State Electronics, 193, (invited) (2022), 108266-1 - 108266-8 doi:10.1016/j.sse.2022.108266. BibTeX |
| 35. | S. Das, A. Sebastian, E. Pop, C. McClellan, A. Franklin, T. Grasser, T. Knobloch, Yu. Illarionov, A. Penumatcha, J. Appenzeller, Z. Chen, W. Zhu, L. Li, U. Avci, N. Bhat, T. Anthopoulos, R. Singh: "Transistors Based on Two-Dimensional Materials for Future Integrated Circuits"; Nature Electronics, 4, (2021), 786 - 799 doi:10.1038/s41928-021-00670-1. BibTeX |
| 34. | Yu. Illarionov, T. Knobloch, T. Grasser: "Crystalline Insulators for Scalable 2D Nanoelectronics"; Solid-State Electronics, 185, (2021), 108043-1 - 108043-3 doi:10.1016/j.sse.2021.108043. BibTeX |
| 33. | T. Knobloch, Yu. Illarionov, F. Ducry, C. Schleich, S. Wachter, K. Watanabe, T. Taniguchi, T. Müller, M. Waltl, M. Lanza, M. I. Vexler, M. Luisier, T. Grasser: "The Performance Limits of Hexagonal Boron Nitride as an Insulator for Scaled CMOS Devices Based on Two-Dimensional Materials"; Nature Electronics, 4, (2021), 98 - 108 doi:10.1038/s41928-020-00529-x. BibTeX |
| 32. | Yu. Illarionov, T. Knobloch, T. Grasser: "Native High-k Oxides for 2D Transistors"; Nature Electronics, 3, (2020), 442 - 443 doi:10.1038/s41928-020-0464-2. BibTeX |
| 31. | Yu. Illarionov, T. Knobloch, M. Jech, M. Lanza, D. Akinwande, M. I. Vexler, T. Müller, M. Lemme, G. Fiori, F. Schwierz, T. Grasser: "Insulators for 2D Nanoelectronics: The Gap to Bridge"; Nature Communications, 11, (2020), 3385 doi:10.1038/s41467-020-16640-8. BibTeX |
| 30. | C. Wen, A. Banshchikov, Yu. Illarionov, W. Frammelsberger, T. Knobloch, F. Hui, N. S. Sokolov, T. Grasser, M. Lanza: "Dielectric Properties of Ultrathin CaF2 Ionic Crystals"; Advanced Materials, 32, (2020), 2002525-1 - 2002525-6 doi:10.1002/adma.202002525. BibTeX |
| 29. | A. Banshchikov, Yu. Illarionov, M. I. Vexler, S. Wachter, N. S. Sokolov: "Trends in Reverse-Current Change in Tunnel MIS Diodes with Calcium Fluoride on Si(111) Upon the Formation of an Extra Oxide Layer"; Semiconductors (Physics of Semiconductor Devices), 53, (2019), 833 - 837 doi:10.1134/S1063782619060034. BibTeX |
| 28. | Yu. Illarionov, A. Banshchikov, D.K Polyushkin, S. Wachter, T. Knobloch, M. Thesberg, L. Mennel, M. Paur, M. Stöger-Pollach, A. Steiger-Thirsfeld, M. I. Vexler, M. Waltl, N. S. Sokolov, T. Müller, T. Grasser: "Ultrathin Calcium Fluoride Insulators for Two-Dimensional Field-Effect Transistors"; Nature Electronics, 2, (2019), 230 - 235 doi:10.1038/s41928-019-0256-8. BibTeX |
| 27. | Yu. Illarionov, A. Banshchikov, D.K Polyushkin, S. Wachter, T. Knobloch, M. Thesberg, M. I. Vexler, M. Waltl, M. Lanza, N. S. Sokolov, A. Müller, T. Grasser: "Reliability of Scalable MoS2 FETs With 2 nm Crystalline CaF2 Insulators"; 2D Materials, 6, (2019), 045004 doi:10.1088/2053-1583/ab28f2. BibTeX |
| 26. | X. Jing, Yu. Illarionov, E. Yalon, P. Zhou, T. Grasser, Y. Shi, M. Lanza: "Engineering Field Effect Transistors with 2D Semiconducting Channels: Status and Prospects"; Advanced Functional Materials, 30, (2019), 1901971 doi:10.1002/adfm.201901971. BibTeX |
| 25. | N. Oliva, Yu. Illarionov, E. Casu, M. Cavalieri, T. Knobloch, T. Grasser, A. Ionescu: "Hysteresis Dynamics in Double-Gated n-Type WSe2 FETs With High-k Top Gate Dielectric"; IEEE Journal of the Electron Devices Society, 7, (2019), 1163 - 1169 doi:10.1109/JEDS.2019.2933745. BibTeX |
| 24. | B. Ullmann, M. Jech, K. Puschkarsky, G.A. Rott, M. Waltl, Yu. Illarionov, H. Reisinger, T. Grasser: "Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part I: Experimental"; IEEE Transactions on Electron Devices, 66, (2019), 232 - 240 doi:10.1109/TED.2018.2873419. BibTeX |
| 23. | Yu. Illarionov, A. Banshchikov, N. S. Sokolov, S. Wachter, M. I. Vexler: "Nonmonotonic Change in the Tunnel Conductivity of an MIS Structure with a Two-Layer Insulator with an Increase in Its Thickness (by the Example of the Metal/SiO2/CaF2/Si System)"; Technical Physics Letters, 44, (2018), 1188 - 1191 doi:10.1134/S1063785018120441. BibTeX |
| 22. | T. Knobloch, G. Rzepa, Yu. Illarionov, M. Waltl, F. Schanovski, B. Stampfer, M. M. Furchi, T. Müller, T. Grasser: "A Physical Model for the Hysteresis in MoS2 Transistors"; IEEE Journal of the Electron Devices Society, 6, (2018), 972 - 978 doi:10.1109/JEDS.2018.2829933. BibTeX |
| 21. | B. Stampfer, F. Zhang, Yu. Illarionov, T. Knobloch, P. Wu, M. Waltl, A. Grill, J. Appenzeller, T. Grasser: "Characterization of Single Defects in Ultrascaled MoS2 Field-Effect Transistors"; ACS Nano, 12, (2018), 5368 - 5375 doi:10.1021/acsnano.8b00268. BibTeX |
| 20. | Yu. Illarionov, T. Knobloch, M. Waltl, G. Rzepa, A. Pospischil, D.K Polyushkin, M. M. Furchi, T. Müller, T. Grasser: "Energetic Mapping of Oxide Traps in MoS2 Field-Effect Transistors"; 2D Materials, 4, (2017), 025108-1 - 025108-10 doi:10.1088/2053-1583/aa734a. BibTeX |
| 19. | Yu. Illarionov, K. Smithe, M. Waltl, T. Knobloch, E. Pop, T. Grasser: "Improved Hysteresis and Reliability of MoS2 Transistors With High-Quality CVD Growth and Al2O3 Encapsulation"; IEEE Electron Device Letters, 38, (2017), 1763 - 1766 doi:10.1109/LED.2017.2768602. BibTeX |
| 18. | Yu. Illarionov, M. Waltl, G. Rzepa, T. Knobloch, J. Kim, D. Akinwande, T. Grasser: "Highly-Stable Black Phosphorus Field-Effect Transistors with Low Density of Oxide Traps"; npj 2D Materials and Applications, 1, (2017), 23-1 - 23-7 doi:10.1038/s41699-017-0025-3. BibTeX |
| 17. | M. Vexler, Yu. Illarionov, I. Grekhov: "Quantum-Well Charge and Voltage Distribution in a Metal-Insulator-Semiconductor Structure upon Resonant Electron Tunneling"; Semiconductors (Physics of Semiconductor Devices), 51, (2017), 444 - 448 doi:10.1134/S1063782617040224. BibTeX |
| 16. | Yu. Illarionov, G. Rzepa, M. Waltl, T. Knobloch, A. Grill, M. M. Furchi, T. Müller, T. Grasser: "The Role of Charge Trapping in MoS2/SiO2 and MoS2/hBN Field-Effect Transistors"; 2D Materials, 3, (2016), 035004-1 - 035004-10 doi:10.1088/2053-1583/3/3/035004. BibTeX |
| 15. | Yu. Illarionov, M. Waltl, G. Rzepa, J. Kim, S. Kim, A. Dodabalapur, D. Akinwande, T. Grasser: "Long-Term Stability and Reliability of Black Phosphorus Field-Effect Transistors"; ACS Nano, 10, (2016), 9543 - 9549 doi:10.1021/acsnano.6b04814. BibTeX |
| 14. | Yu. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, M. Lemme, T. Grasser: "Bias-Temperature Instability on the Back Gate of Single-Layer Double-Gated Graphene Field-Effect Transistors"; Japanese Journal of Applied Physics, 55, (2016), 04EP03 doi:10.7567/JJAP.55.04EP03. BibTeX |
| 13. | X. Jing, E. Panholzer, X. Song, E. Grustan-Gutierrez, F. Hui, Y. Shi, G. Benstetter, Yu. Illarionov, T. Grasser, M. Lanza: "Fabrication of Scalable and Ultra Low Power Photodetectors with High Light/Dark Current Ratios Using Polycrystalline Monolayer MoS2 Sheets"; Nano Energy, 30, (2016), 494 - 502 doi:10.1016/j.nanoen.2016.10.032. BibTeX |
| 12. | M. Vexler, G.G. Kareva, Yu. Illarionov, I. Grekhov: "Resonant Electron Tunneling and Related Charging Phenomena in Metal-Oxide-p+-Si Nanostructures"; Technical Physics Letters, 42, (2016), 1090 - 1093 doi:10.1134/S1063785016110109. BibTeX |
| 11. | Yu. Illarionov, M. Bina, S. E. Tyaginov, K. Rott, B. Kaczer, H. Reisinger, T. Grasser: "Extraction of the Lateral Position of Border Traps in Nanoscale MOSFETs"; IEEE Transactions on Electron Devices, 62, (2015), 2730 - 2737 doi:10.1109/TED.2015.2454433. BibTeX |
| 10. | Yu. Illarionov, A. Smith, S. Vaziri, M. Ostling, T. Müller, M. Lemme, T. Grasser: "Hot-Carrier Degradation and Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors: Similarities and Differences"; IEEE Transactions on Electron Devices, 62, (2015), 3876 - 3881 doi:10.1109/TED.2015.2480704. BibTeX |
| 9. | Yu. Illarionov, M. I. Vexler, M. Karner, S. E. Tyaginov, J. Cervenka, T. Grasser: "TCAD Simulation of Tunneling Leakage Current in CaF2/Si(111) MIS Structures"; Current Applied Physics, 15, (2015), 78 - 83 doi:10.1016/j.cap.2014.10.015. BibTeX |
| 8. | M. I. Vexler, Yu. Illarionov, S. E. Tyaginov, T. Grasser: "Adaptation of the Model of Tunneling in a Metal/CaF2/Si(111) System for Use in Industrial Simulators of MIS Devices"; Semiconductors (Physics of Semiconductor Devices), 49, (2015), 259 - 263 doi:10.1134/S1063782615020207. BibTeX |
| 7. | Yu. Illarionov, M. Bina, S. E. Tyaginov, T. Grasser: "An Analytical Approach for the Determination of the Lateral Trap Position in Ultra-Scaled MOSFETs"; Japanese Journal of Applied Physics, 53, (2014), 04EC22-1 - 04EC22-4 doi:10.7567/JJAP.53.04EC22. BibTeX |
| 6. | Yu. Illarionov, A. Smith, S. Vaziri, M. Ostling, T. Müller, M. Lemme, T. Grasser: "Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors"; Applied Physics Letters, 105, (2014), 1435071 - 1435075 doi:10.1063/1.4897344. BibTeX |
| 5. | Yu. Illarionov, M. I. Vexler, V. V. Fedorov, S. M. Suturin, N. S. Sokolov: "Electrical and Optical Characterization of Au/CaF2/p-Si(111) Tunnel-Injection Diodes"; Journal of Applied Physics, 115, (2014), 223706-1 - 223706-5 doi:10.1063/1.4882375. BibTeX |
| 4. | S. E. Tyaginov, Yu. Illarionov, M. I. Vexler, M. Bina, J. Cervenka, J. Franco, B. Kaczer, T. Grasser: "Modeling of Deep-Submicron Silicon-Based MISFETs with Calcium Fluoride Dielectric"; Journal of Computational Electronics, 13, (2014), 733 - 738 doi:10.1007/s10825-014-0593-9. BibTeX |
| 3. | Yu. Illarionov, M. I. Vexler, V. V. Fedorov, S. M. Suturin, N. S. Sokolov: "Light Emission from the Au/CaF2/p-Si(111) Capacitors: Evidence for an Elastic Electron Tunneling Through a Thin (1-2 nm) Fluoride Layer"; Thin Solid Films, 545, (2013), 580 - 583 doi:10.1016/j.tsf.2013.07.050. BibTeX |
| 2. | G.G. Kareva, M. I. Vexler, Yu. Illarionov: "Transformation of a Metal-Insulator-Silicon Structure into a Resonant-Tunneling Diode"; Microelectronic Engineering, 109, (2013), 270 - 273 doi:10.1016/j.mee.2013.03.063. BibTeX |
| 1. | M. I. Vexler, S. E. Tyaginov, Yu. Illarionov, Y. K. Sing, A. D. Shenp, V. V. Fedorov, D. V. Isakov: "A General Simulation Procedure for the Electrical Characteristics of Metal Insulator Semiconductor Tunnel Structures"; Semiconductors (Physics of Semiconductor Devices), 47, (2013), 686 - 694 doi:10.1134/S1063782613050230. BibTeX |
| 1. | T. Knobloch, G. Rzepa, Yu. Illarionov, M. Waltl, D.K Polyushkin, A. Pospischil, M. M. Furchi, T. Müller, T. Grasser: "Impact of Gate Dielectrics on the Threshold Voltage in MoS2 Transistors"; in "Semiconductors, Dielectrics, and Metals for Nanoelectronics 15, Vol.80, No.1", issued by The Electrochemical Society; D. Misra, S. De Gendt, M. Houssa, K. Kita, D. Landheer (ed); ECS Transactions, (invited) 2017, ISBN: 978-1-62332-470-4, 203 - 217 doi:10.1149/08001.0203ecst. BibTeX |
| 38. | T. Knobloch, Yu. Illarionov, T. Grasser: "Enhancing the Stability of 2D Material-Based Transistors via Fermi-Level Tuning"; Talk: Graphene Week 2022, Munich, Germany; (invited) 2022-09-05 - 2022-09-09; in "Abstracts of Graphene Week 2022", (2022), . BibTeX |
| 37. | V. Sverdlov, H. Seiler, A.-M. El-Sayed, Yu. Illarionov, H. Kosina, S. Selberherr: "Edge Modes in Narrow Nanoribbons of Transition Metal Dichalcogenides in a Topological 1T"; Talk: International Conference on Physics and its Application, San Francisco, USA; (invited) 2022-07-18 - 2022-07-21; in "International Conference on Physics and its Application 2022", (2022), 36 - 37. BibTeX |
| 36. | Yu. Illarionov, B. Uzlu, T. Knobloch, A. Banshchikov, V. Sverdlov, M. Vexler, N. S. Sokolov, M. Waltl, Z. Wang, D. Neumaier, M. Lemme, T. Grasser: "CVD-GFETs with Record-small Hysteresis Owing to 2nm Epitaxial CaF2 Insulators"; Talk: Device Research Conference (DRC), Columbus, OH; 2022-06-26 - 2022-06-29; in "Proceedings of the Device Research Conference (DRC)", (2022), ISBN: 978-1-6654-9883-8, 121 - 122. BibTeX |
| 35. | T. Knobloch, Yu. Illarionov, T. Grasser: "Finding Suitable Gate Insulators for Reliable 2D FETs"; Talk: International Reliability Physics Symposium (IRPS), Dallas, USA; (invited) 2022-03-27 - 2022-03-31; in "2022 IEEE International Reliability Physics Symposium (IRPS) : proceedings : March 27-31, 2022, Dallas, Texas / IEEE", (2022), ISBN: 978-1-6654-7950-9, 2A.1-1 - 2A.1-10 doi:10.1109/IRPS48227.2022.9764499. BibTeX |
| 34. | C. Wen, Yu. Illarionov, W. Frammelsberger, T. Knobloch, T. Grasser, M. Lanza: "Outstanding Dielectric Properties of Ultra-thin CaF2 Dielectric Films"; Talk: APS March Meeting, College Park, MD, USA; 2021-03-15 - 2021-03-19; in "Bulletin of the American Physical Society", (2021), . BibTeX |
| 33. | Yu. Illarionov, T. Knobloch, M. Waltl, S. Majumdar, M. Soikkeli, W. Kim, S. Wachter, D.K Polyushkin, S. Arpiainen, M. Prunnila, A. Mueller, T. Grasser: "Low Variability and 1010 On/Off Current Ratio in Flexible MoS2 FETs with Al2O3 Encapsulation Improved by Parylene N"; Talk: Electronic Materials Conference (EMC), Columbus, OH, USA - virtual; 2020-06-24 - 2020-06-26; in "Proceedings of the Electronic Materials Conference (EMC)", (2020), 25. BibTeX |
| 32. | T. Knobloch, Yu. Illarionov, B. Uzlu, M. Waltl, D. Neumaier, M. Lemme, T. Grasser: "The Impact of the Graphene Work Function on the Stability of Flexible GFETs"; Talk: Electronic Materials Conference (EMC), Columbus, OH, USA - virtual; 2020-06-24 - 2020-06-26; in "Proceedings of the Electronic Materials Conference (EMC)", (2020), . BibTeX |
| 31. | Yu. Illarionov, A. Banshchikov, T. Knobloch, D.K Polyushkin, S. Wachter, V. V. Fedorov, S. M. Suturin, M. Stöger-Pollach, M. I. Vexler, N. S. Sokolov, T. Grasser: "Crystalline Calcium Fluoride: A Record-Thin Insulator for Nanoscale 2D Electronics"; Talk: Device Research Conference (DRC), Columbus, OH, USA - virtual; 2020-06-21 - 2020-06-24; in "Proceedings of the Device Research Conference (DRC)", (2020), 1 - 2 doi:10.1109/DRC50226.2020.9135160. BibTeX |
| 30. | Yu. Illarionov, T. Knobloch, K. Smithe, M. Waltl, R. Grady, D. Waldhör, E. Pop, T. Grasser: "Anomalous Instabilities in CVD-MoS2 FETs Suppressed by High-Quality Al2O3 Encapsulation"; Poster: Device Research Conference (DRC), Columbus, OH, USA - virtual; 2020-06-21 - 2020-06-24; in "Proceedings of the Device Research Conference (DRC)", (2020), 150 - 151. BibTeX |
| 29. | T. Knobloch, J. Michl, D. Waldhör, Yu. Illarionov, B. Stampfer, A. Grill, R. Zhou, P. Wu, M. Waltl, J. Appenzeller, T. Grasser: "Analysis of Single Electron Traps in Nano-scaled MoS2 FETs at Cryogenic Temperatures"; Talk: Device Research Conference (DRC), Columbus, OH, USA - virtual; 2020-06-21 - 2020-06-24; in "Proceedings of the Device Research Conference (DRC)", (2020), 52 - 53. BibTeX |
| 28. | Yu. Illarionov, T. Knobloch, T. Grasser: "Where Are the Best Insulators for 2D Field-Effect Transistors?"; Talk: Meeting of the Electrochemical Society (ECS), Montreal, Canada - virtual; (invited) 2020-05-10 - 2020-05-14; in "Abstracts of the Meeting of the Electrochemical Society (ECS)", (2020), MA2020-01/844, doi:10.1149/MA2020-0110844mtgabs. BibTeX |
| 27. | Yu. Illarionov, T. Grasser: "Reliability of 2D Field-Effect Transistors: from First Prototypes to Scalable Devices"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Hangzhou, China; (invited) 2019-07-02 - 2019-07-05; in "Proceedings of the International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)", (2019), 1 - 6 doi:10.1109/IPFA47161.2019.8984799. BibTeX |
| 26. | Yu. Illarionov, A. Banshchikov, M. Vexler, D.K Polyushkin, S. Wachter, M. Thesberg, N. S. Sokolov, T. Mueller, T. Grasser: "Epitaxial CaF2: a Route towards Scalable 2D Electronics"; Poster: International Conference on Physics of 2D Crystals (ICP2DC4), Hangzhou, China; 2019-06-10 - 2019-06-15; in "Proceedings of the International Conference on Physics of 2D Crystals (ICP2DC4)", (2019), 69. BibTeX |
| 25. | Yu. Illarionov, K. Smithe, M. Waltl, R. Grady, R.G. Deshmukh, E. Pop, T. Grasser: "Annealing and Encapsulation of CVD-MoS2 FETs with 1010 On/Off Current Ratio"; Poster: Device Research Conference (DRC), Santa-Barbara, CA, USA; 2018-06-24 - 2018-06-27; in "Proceedings of the Device Research Conference (DRC)", (2018), ISBN: 978-1-5386-3028-0, doi:10.1109/DRC.2018.8442242. BibTeX |
| 24. | Yu. Illarionov, A.J. Molina- Mendoza, M. Waltl, T. Knobloch, M. M. Furchi, T. Mueller, T. Grasser: "Reliability of next-generation field-effect transistors with transition metal dichalcogenides"; Talk: IEEE International Reliability Physics Symposium (IRPS), Burlingame, CA, USA; 2018-03-11 - 2018-03-15; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2018), ISBN: 978-1-5386-5479-8, 6 page(s) doi:10.1109/IRPS.2018.8353605. BibTeX |
| 23. | T. Knobloch, G. Rzepa, Yu. Illarionov, M. Waltl, D.K Polyushkin, A. Pospischil, M. M. Furchi, T. Müller, T. Grasser: "Impact of Gate Dielectrics on the Threshold Voltage in MoS2 Transistors"; Talk: Meeting of the Electrochemical Society (ECS), National Harbor, Maryland, USA; (invited) 2017-10-01 - 2017-10-05; in "Meeting Abstracts", (2017), MA2017-02(14): 837, 2 page(s) . BibTeX |
| 22. | Yu. Illarionov, M. Waltl, K. Smithe, E. Pop, T. Grasser: "Encapsulated MoS2 FETs with Improved Performance and Reliability"; Talk: GRAPCHINA, Nanjing, China; 2017-09-24 - 2017-09-26; in "Proceedings of the GRAPCHINA 2017", (2017), 1 page(s) . BibTeX |
| 21. | T. Knobloch, G. Rzepa, Yu. Illarionov, M. Waltl, F. Schanovsky, M. Jech, B. Stampfer, M. M. Furchi, T. Müller, T. Grasser: "Physical Modeling of the Hysteresis in MoS2 Transistors"; Talk: European Solid-State Device Research Conference (ESSDERC), Leuven, Belgium; 2017-09-11 - 2017-09-14; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2017), 284 - 287 doi:10.1109/ESSDERC.2017.8066647. BibTeX |
| 20. | B. Ullmann, M. Jech, S. E. Tyaginov, M. Waltl, Yu. Illarionov, A. Grill, K. Puschkarsky, H. Reisinger, T. Grasser: "The Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on Single Oxide Defects"; Poster: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2017-04-04 - 2017-04-06; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6642-1, XT-10.1 - XT-10.6 doi:10.1109/IRPS.2017.7936424. BibTeX |
| 19. | Yu. Illarionov, M. Waltl, M. Jech, J. Kim, D. Akinwande, T. Grasser: "Reliability of Black Phosphorus Field-Effect Transistors with Respect to Bias-Temperature and Hot-Carrier Stress"; Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2017-04-02 - 2017-04-06; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6642-1, 6A-6.1 - 6A-6.6 doi:10.1109/IRPS.2017.7936338. BibTeX |
| 18. | Yu. Illarionov, G. Rzepa, M. Waltl, T. Knobloch, J. Kim, D. Akinwande, T. Grasser: "Accurate Mapping of Oxide Traps in Highly-Stable Black Phosphorus FETs"; Talk: IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Toyama, Japan; 2017-02-28 - 2017-03-02; in "Proceedings of the IEEE Electron Devices Technology and Manufacturing Conference (EDTM)", (2017), ISBN: 978-1-5090-4661-4, 114 - 115 doi:10.1109/EDTM.2017.7947532. BibTeX |
| 17. | Yu. Illarionov, G. Rzepa, M. Waltl, H. Pandey, S. Kataria, V. Passi, M. Lemme, T. Grasser: "A Systematic Study of Charge Trapping in Single-Layer Double-Gated GFETs"; Talk: Device Research Conference, Newark, Delaware, USA; 2016-06-19 - 2016-06-22; in "74th Device Research Conference Digest", (2016), ISBN: 978-1-5090-2827-6, 89 - 90. BibTeX |
| 16. | Yu. Illarionov, M. Waltl, J. Kim, D. Akinwande, T. Grasser: "Temperature-dependent Hysteresis in Black Phosphorus FETs"; Poster: Graphene Week, Warsaw, Poland; 2016-06-13 - 2016-06-17; in "Proceedings of the 2016 Graphene Week", (2016), . BibTeX |
| 15. | Yu. Illarionov, M. Waltl, M. M. Furchi, T. Müller, T. Grasser: "Reliability of Single-Layer MoS2 Field-Effect Transistors with SiO2 and hBN Gate Insulators"; Talk: IEEE International Reliability Physics Symposium (IRPS), Pasadena, CA, USA; 2016-04-17 - 2016-04-21; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2016), 5A-1-1 - 5A-1-6 doi:10.1109/IRPS.2016.7574543. BibTeX |
| 14. | Yu. Illarionov, M. Vexler, V. V. Fedorov, S. M. Suturin, N. S. Sokolov, T. Grasser: "Characterization of Epitaxial Calcium Fluoride as a Dielectric Material for Ultra-Thin Barrier Layers in Silicon Microelectronics"; Poster: International Conference on Solid State Devices and Materials (SSDM), Sapporo, Japan; 2015-09-27 - 2015-09-30; in "Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials (SSDM 2015)", (2015), ISBN: 978-4-86348-514-3, 330 - 331. BibTeX |
| 13. | Yu. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, M. Lemme, T. Grasser: "Back Gate Bias-Temperature Instability in Single-Layer Double-Gated Graphene Field-Effect Transistors"; Talk: International Conference on Solid State Devices and Materials (SSDM), Sapporo, Japan; 2015-09-27 - 2015-09-30; in "Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials (SSDM 2015)", (2015), ISBN: 978-4-86348-514-3, 650 - 651. BibTeX |
| 12. | Yu. Illarionov, M. Waltl, S. Smith, S. Vaziri, M. Ostling, M. Lemme, T. Grasser: "Interplay between Hot Carrier and Bias Stress Components in Single-Layer Double-Gated Graphene Field-Effect Transistors"; Talk: European Solid-State Device Research Conference (ESSDERC), Graz, Austria; 2015-09-14 - 2015-09-18; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2015), ISBN: 978-1-4673-7133-9, 172 - 175 doi:10.1109/ESSDERC.2015.7324741. BibTeX |
| 11. | Yu. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, T. Müller, M. Lemme, T. Grasser: "Hot-Carrier Degradation in Single-Layer Double-Gated Graphene Field-Effect Transistors"; Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2015-04-19 - 2015-04-23; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2015), XT.2.1 - XT.2.6 doi:10.1109/IRPS.2015.7112834. BibTeX |
| 10. | Yu. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, M. Lemme, T. Grasser: "Temperature Dependence of Hot Carrier and Positive Bias Stress Degradation in Double-Gated Graphene Field-Effect Transistors"; Talk: Graphene 2015, Bilbao, Spain; 2015-03-10 - 2015-03-13; in "Abstracts Graphene 2015", (2015), 1 page(s) . BibTeX |
| 9. | Yu. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, M. Lemme, T. Grasser: "Impact of Hot Carrier Stress on the Defect Density and Mobility in Double-Gated Graphene Field-Effect Transistors"; Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Bologna, Italy; 2015-01-26 - 2015-01-28; in "Proceedings of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2015), ISBN: 978-1-4799-6910-4, 81 - 84 doi:10.1109/ULIS.2015.7063778. BibTeX |
| 8. | Yu. Illarionov, A. Smith, S. Vaziri, M. Ostling, T. Müller, M. Lemme, T. Grasser: "Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors: A Reliability Challenge"; Talk: Silicon Nanoelectronics Workshop, Honolulu, Hawaii, USA; 2014-06-08 - 2014-06-09; in "2014 IEEE Silicon Nanoelectronics Workshop", (2014), ISBN: 978-1-4799-5677-7, 29 - 30. BibTeX |
| 7. | M. Vexler, Yu. Illarionov, S. E. Tyaginov, N. S. Sokolov, V. V. Fedorov, T. Grasser: "Simulation of the Electrical Characteristics of the Devices with Thin Calcium Fluoride Films on Silicon-(111) Using MINIMOS-NT"; Talk: DIELECTRICS-2014, St-Petersburg, Russia; 2014-06-02 - 2014-06-06; in "Materials of XIII International conference DIELECTRICS", (2014), 159 - 162. BibTeX |
| 6. | Yu. Illarionov, M. Bina, S. E. Tyaginov, K. Rott, H. Reisinger, B. Kaczer, T. Grasser: "A Reliable Method for the Extraction of the Lateral Position of Defects in Ultra-scaled MOSFETs"; Poster: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 2014-06-01 - 2014-06-05; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2014), ISBN: 978-1-4799-3317-4, XT13.1 - XT13.6. BibTeX |
| 5. | Yu. Illarionov, S. E. Tyaginov, M. Bina, T. Grasser: "A method to determine the lateral trap position in ultra-scaled MOSFETs"; Talk: Solid State Devices and Materials Conference (SSDM), Fukuoka, Japan; 2013-09-24 - 2013-09-27; in "Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials(SSDM)", (2013), ISBN: 978-4-86348-362-0, 728 - 729. BibTeX |
| 4. | Yu. Illarionov, M. I. Vexler, V. V. Fedorov, S. M. Suturin, D. V. Isakov, I. Grekhov: "Optical characterization of the injection properties of MIS structures with thin CaF2 and HfO2/SiO2 insulating layers on Silicon"; Poster: XI Russian Conference on Semiconductor Physics, St-Petersburg, Russia; 2013-09-16 - 2013-09-20; in "Abstracts of XI Russian Conference on Semiconductor Physics", (2013), ISBN: 978-5-93634-033-3, 229. BibTeX |
| 3. | S. E. Tyaginov, D. Osintsev, Yu. Illarionov, J.M. Park, H. Enichlmair, M. I. Vexler, T. Grasser: "Tunnelling of strongly non-equilibrium carriers in the transistors of traditional configuration"; Poster: XI Russian Conference on Semiconductor Physics, St-Petersburg, Russia; 2013-09-16 - 2013-09-20; in "Abstracts of XI Russian Conference on Semiconductor Physics", (2013), ISBN: 978-5-93634-033-3, 441. BibTeX |
| 2. | M. I. Vexler, Yu. Illarionov, S. M. Suturin, V. V. Fedorov, N. S. Sokolov: "Tunnel charge transport in Au/CaF2/Si(111) system"; Talk: XI Russian Conference on Semiconductor Physics, St-Petersburg, Russia; 2013-09-16 - 2013-09-20; in "Abstracts of XI Russian Conference on Semiconductor Physics", (2013), ISBN: 978-5-93634-033-3, 74. BibTeX |
| 1. | G.G. Kareva, M. I. Vexler, Yu. Illarionov: "Transformation of a Metal-Insulator-Silicon Structure into a Resonant-Tunneling Diode"; Poster: International Conference on Insulating Films on Semiconductors (INFOS), Cracow, Poland; 2013-06-25 - 2013-06-28; in "Book of Abstracts", (2013), ISBN: 978-83-7814-115-0, 246 - 247. BibTeX |
| 10. | Yu. Illarionov, T. Knobloch, B. Uzlu, N. S. Sokolov, M. Lemme, T. Grasser: "Highly stable GFETs with 2nm crystalline CaF2 insulators"; Talk: 6th International Conference on Physics of 2D materials based electronics and optoelectronics (ICP2DC6, 2022), Yerevan, Armenia; 2022-10-09 - 2022-10-14; . BibTeX |
| 9. | Yu. Illarionov, T. Knobloch, M. Waltl, Q. Smets, L. Panarella, B. Kaczer, T. Schram, S. Brems, D. Cott, I. Asselberghs, T. Grasser: "Top Gate Length Dependence of Hysteresis in 300mm FAB MoS2 FETs"; Talk: Graphne 2022, Aachen, Germany; 2022-07-05 - 2022-07-08; . BibTeX |
| 8. | Yu. Illarionov, T. Knobloch, T. Grasser: "Crystalline Insulators for Scalable 2D Nanoelectronics"; Talk: International Conference on Insulating Films on Semiconductors (INFOS), Rende (CS), Italy; (invited) 2021-06-29 - 2021-07-02; . BibTeX |
| 7. | Yu. Illarionov, A. Banshchikov, N. S. Sokolov, V. V. Fedorov, S. M. Suturin, M. I. Vexler, T. Knobloch, D.K Polyushkin, T. Mueller, T. Grasser: "Epitaxial Fluorides as a Universal Platform for More Moore and More than Moore Electronics Based on 2D Materials"; Talk: Scientific Council Meeting of the Russian Academy of Sciences, Moscow, Russia; (invited) 2021-04-08. BibTeX |
| 6. | Yu. Illarionov, A. Banshchikov, D.K Polyushkin, S. Wachter, M. I. Vexler, N. S. Sokolov, T. Müller, T. Grasser: "Reliability and Thermal Stability of MoS2 FETs with Ultrathin CaF2 Insulator"; Talk: IEEE Nanotechnology Materials and Devices Conference (NMDC), Stockholm, Sweden; (invited) 2019-10-27 - 2019-10-30; . BibTeX |
| 5. | Yu. Illarionov, A. Banshchikov, D.K Polyushkin, S. Wachter, M. Vexler, N. S. Sokolov, T. Müller, T. Grasser: "CaF2 Insulators for Ultrascaled 2D Field Effect Transistors"; Talk: Graphene Week, Helsinki, Finland; (invited) 2019-09-23 - 2019-09-27; . BibTeX |
| 4. | S. Majumdar, M. Soikkeli, W. Kim, Yu. Illarionov, S. Wachter, D.K Polyushkin, S. Arpiainen, M. Prunnila: "Passivation controlled field effect mobility in 2D semiconductor based FET devices for high performance logic circuit development on flexible platform"; Poster: Graphene Week, Helsinki, Finland; 2019-09-23 - 2019-09-27; . BibTeX |
| 3. | Yu. Illarionov: "On the Way to Commercial 2D Electronics..."; Talk: 2nd Zhejiang Sci-Tech University Forum for International Young Scholars, Hangzhou, China; (invited) 2018-11-25 - 2018-11-27; . BibTeX |
| 2. | Yu. Illarionov, B. Stampfer, F. Zhang, T. Knobloch, P. Wu, M. Waltl, A. Grill, J. Appenzeller, T. Grasser: "Characterization of Single Defects: from Si to MoS2 FETs"; Poster: International Conference on Physics of 2D Crystals (ICP2C3), Valetta, Malta; 2018-05-29 - 2018-06-02; . BibTeX |
| 1. | Yu. Illarionov, M. Waltl, T. Knobloch, G. Rzepa, T. Grasser: "Reliability Perspective of 2D Electronics"; Talk: International Conference on Physics of 2D Crystals (ICP2C2), Ha Long, Vietnam; 2017-04-25 - 2017-04-30; . BibTeX |
| 2. | Yu. Illarionov: "Characterization and Modeling of Charged Defects in Silicon and 2D Field-Effect Transistors"; Reviewer: T. Grasser, L. Larcher; Institut für Mikroelektronik, 2015, oral examination: 2015-12-18 doi:10.34726/hss.2016.34580. BibTeX |
| 1. | Yu. Illarionov: "Tunnel Carrier Transport and Related Physical Phenomena in Gold - Calcium Fluoride - Silicon (111) Structures"; Reviewer: M. I. Vexler, A. Baraban, L. Goray; Ioffe Institute, 2015, oral examination: 2015-01-22. BibTeX |