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Publications Yury Illarionov

91 records

Books and Editorships

1.   Illarionov, Y. (2014).
Tunnel Carrier Transport and Related Physical Phenomena in Gold - Calcium Fluoride - Silicon (111) Structures.
Typography of St-Petersburg State Polytechnical University. (reposiTUm)

Publications in Scientific Journals

39.   Sverdlov, V., Seiler, H., El-Sayed, A.-M. B., Illarionov, Y., Kosina, H. (2022).
Edge Modes and Their Conductance in Narrow Nanoribbons of 2D Materials in a Topological Phase.
Solid-State Electronics, 193(108266), 108266. https://doi.org/10.1016/j.sse.2022.108266 (reposiTUm)

38.   Knobloch, T., Uzlu, B., Illarionov, Y., Wang, Z., Otto, M., Filipovic, L., Waltl, M., Neumaier, D., Lemme, M. C., Grasser, T. (2022).
Improving Stability in Two-Dimensional Transistors With Amorphous Gate Oxides by Fermi-Level Tuning.
Nature Electronics, 5(6), 356–366. https://doi.org/10.1038/s41928-022-00768-0 (reposiTUm)

37.   Illarionov, Y. Yu., Knobloch, T., Grasser, T. (2022).
Inorganic Molecular Crystals for 2D Electronics.
Nature Electronics, 4(12), 870–871. https://doi.org/10.1038/s41928-021-00691-w (reposiTUm)

36.   Waltl, M., Knobloch, T., Tselios, K., Filipovic, L., Stampfer, B., Hernandez, Y., Waldhör, D., Illarionov, Y., Kaczer, B., Grasser, T. (2022).
Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology?
Advanced Materials, 34(48), 2201082. https://doi.org/10.1002/adma.202201082 (reposiTUm)

35.   Illarionov, Y. Y., Knobloch, T., Grasser, T. (2021).
Crystalline Insulators for Scalable 2D Nanoelectronics.
Solid-State Electronics, 185(108043), 108043. https://doi.org/10.1016/j.sse.2021.108043 (reposiTUm)

34.   Knobloch, T., Illarionov, Y. Yu., Ducry, F., Schleich, C., Wachter, S., Watanabe, K., Taniguchi, T., Mueller, T., Waltl, M., Lanza, M., Vexler, M. I., Luisier, M., Grasser, T. (2021).
The Performance Limits of Hexagonal Boron Nitride as an Insulator for Scaled CMOS Devices Based on Two-Dimensional Materials.
Nature Electronics, 4(2), 98–108. https://doi.org/10.1038/s41928-020-00529-x (reposiTUm)

33.   Das, S., Sebastian, A., Pop, E., McClellan, C. J., Franklin, A. D., Grasser, T., Knobloch, T., Illarionov, Y., Penumatcha, A. V., Appenzeller, J., Chen, Z., Zhu, W., Asselbberghs, I., Li, L.-J., Avci, U. E., Bhat, N., Anthopoulos, T. D., Singh, R. (2021).
Transistors Based on Two-Dimensional Materials for Future Integrated Circuits.
Nature Electronics, 4(11), 786–799. https://doi.org/10.1038/s41928-021-00670-1 (reposiTUm)

32.   Wen, C., Banshchikov, A. G., Illarionov, Y., Frammelsberger, W., Knobloch, T., Hui, F., Sokolov, N. S., Grasser, T., Lanza, M. (2020).
Dielectric Properties of Ultrathin CaF₂ Ionic Crystals.
Advanced Materials, 32(34), 2002525-1-2002525–2002526. (reposiTUm)

31.   Illarionov, Y. Yu., Knobloch, T., Jech, M., Lanza, M., Akinwande, D., Vexler, M. I., Mueller, T., Lemme, M. C., Fiori, G., Schwierz, F., Grasser, T. (2020).
Insulators for 2D Nanoelectronics: The Gap to Bridge.
Nature Communications, 11(3385). https://doi.org/10.1038/s41467-020-16640-8 (reposiTUm)

30.   Illarionov, Y. Yu., Knobloch, T., Grasser, T. (2020).
Native High-K Oxides for 2D Transistors.
Nature Electronics, 3(8), 442–443. https://doi.org/10.1038/s41928-020-0464-2 (reposiTUm)

29.   Jing, X., Illarionov, Y., Yalon, E., Zhou, P., Grasser, T., Shi, Y., Lanza, M. (2019).
Engineering Field Effect Transistors With 2D Semiconducting Channels: Status and Prospects.
Advanced Functional Materials, 30(18), 1901971. https://doi.org/10.1002/adfm.201901971 (reposiTUm)

28.   Oliva, N., Illarionov, Y. Y., Casu, E. A., Cavalieri, M., Knobloch, T., Grasser, T., Ionescu, A. M. (2019).
Hysteresis Dynamics in Double-Gated N-Type WSe₂ FETs With High-K Top Gate Dielectric.
IEEE Journal of the Electron Devices Society, 7, 1163–1169. https://doi.org/10.1109/jeds.2019.2933745 (reposiTUm)

27.   Ullmann, B., Jech, M., Puschkarsky, K., Rott, G. A., Waltl, M., Illarionov, Y., Reisinger, H., Grasser, T. (2019).
Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part I: Experimental.
IEEE Transactions on Electron Devices, 66(1), 232–240. https://doi.org/10.1109/ted.2018.2873419 (reposiTUm)

26.   Illarionov, Y. Y., Banshchikov, A. G., Polyushkin, D. K., Wachter, S., Knobloch, T., Thesberg, M., Vexler, M. I., Waltl, M., Lanza, M., Sokolov, N. S., Mueller, T., Grasser, T. (2019).
Reliability of Scalable MoS2 FETs With 2 Nm Crystalline CaF2 Insulators.
2D Materials, 6(4), 045004. https://doi.org/10.1088/2053-1583/ab28f2 (reposiTUm)

25.   Banshchikov, A. G., Illarionov, Yu. Yu., Vexler, M. I., Wachter, S., Sokolov, N. S. (2019).
Trends in Reverse-Current Change in Tunnel MIS Diodes With Calcium Fluoride on Si(111) Upon the Formation of an Extra Oxide Layer.
Semiconductors, 53(6), 833–837. https://doi.org/10.1134/s1063782619060034 (reposiTUm)

24.   Illarionov, Y. Yu., Banshchikov, A. G., Polyushkin, D. K., Wachter, S., Knobloch, T., Thesberg, M., Mennel, L., Paur, M., Stöger-Pollach, M., Steiger-Thirsfeld, A., Vexler, M. I., Waltl, M., Sokolov, N. S., Mueller, T., Grasser, T. (2019).
Ultrathin Calcium Fluoride Insulators for Two-Dimensional Field-Effect Transistors.
Nature Electronics, 2(6), 230–235. https://doi.org/10.1038/s41928-019-0256-8 (reposiTUm)

23.   Knobloch, T., Rzepa, G., Illarionov, Y., Waltl, M., Schanovski, F., Stampfer, B., Furchi, M. M., Müller, T., Grasser, T. (2018).
A Physical Model for the Hysteresis in MoS2 Transistors.
IEEE Journal of the Electron Devices Society, 6, 972–978. https://doi.org/10.1109/jeds.2018.2829933 (reposiTUm)

22.   Stampfer, B., Zhang, F., Illarionov, Y. Y., Knobloch, T., Wu, P., Waltl, M., Grill, A., Appenzeller, J., Grasser, T. (2018).
Characterization of Single Defects in Ultrascaled MoS2 Field-Effect Transistors.
ACS Nano, 12(6), 5368–5375. https://doi.org/10.1021/acsnano.8b00268 (reposiTUm)

21.   Illarionov, Yu. Yu., Banshchikov, A. G., Sokolov, N. S., Wachter, S., Vexler, M. I. (2018).
Nonmonotonic Change in the Tunnel Conductivity of an MIS Structure With a Two-Layer Insulator With an Increase in Its Thickness (By the Example of the Metal/SiO2/CaF2/Si System).
Technical Physics Letters, 44(12), 1188–1191. https://doi.org/10.1134/s1063785018120441 (reposiTUm)

20.   Illarionov, Y. Y., Knobloch, T., Waltl, M., Rzepa, G., Pospischil, A., Polyushkin, D., Furchi, M. M., Mueller, T., Grasser, T. (2017).
Energetic Mapping of Oxide Traps in MoS₂ Field-Effect Transistors.
2D Materials, 4(2), Article 025108. https://doi.org/10.1088/2053-1583/aa734a (reposiTUm)

19.   Illarionov, Yu. Yu., Waltl, M., Rzepa, G., Knobloch, T., Kim, J.-S., Akinwande, D., Grasser, T. (2017).
Highly-Stable Black Phosphorus Field-Effect Transistors With Low Density of Oxide Traps.
Npj 2D Materials and Applications, 1(23). https://doi.org/10.1038/s41699-017-0025-3 (reposiTUm)

18.   Illarionov, Y. Yu., Smithe, K. K. H., Waltl, M., Knobloch, T., Pop, E., Grasser, T. (2017).
Improved Hysteresis and Reliability of MoS₂ Transistors With High-Quality CVD Growth and Al₂O₃ Encapsulation.
IEEE Electron Device Letters, 38(12), 1763–1766. https://doi.org/10.1109/led.2017.2768602 (reposiTUm)

17.   Vexler, M. I., Illarionov, Yu. Yu., Grekhov, I. V. (2017).
Quantum-Well Charge and Voltage Distribution in a Metal-Insulator-Semiconductor Structure Upon Resonant Electron Tunneling.
Semiconductors, 51(4), 444–448. https://doi.org/10.1134/s1063782617040224 (reposiTUm)

16.   Illarionov, Y. Yu., Waltl, M., Smith, A. D., Vaziri, S., Ostling, M., Lemme, M. C., Grasser, T. (2016).
Bias-Temperature Instability on the Back Gate of Single-Layer Double-Gated Graphene Field-Effect Transistors.
Japanese Journal of Applied Physics, 55(4S), 04EP03. https://doi.org/10.7567/jjap.55.04ep03 (reposiTUm)

15.   Jing, X., Panholzer, E., Song, X., Grustan-Gutierrez, E., Hui, F., Shi, Y., Benstetter, G., Illarionov, Y., Grasser, T., Lanza, M. (2016).
Fabrication of Scalable and Ultra Low Power Photodetectors With High Light/Dark Current Ratios Using Polycrystalline Monolayer MoS2 Sheets.
Nano Energy, 30, 494–502. https://doi.org/10.1016/j.nanoen.2016.10.032 (reposiTUm)

14.   Illarionov, Y. Y., Waltl, M., Rzepa, G., Kim, J.-S., Kim, S., Dodabalapur, A., Akinwande, D., Grasser, T. (2016).
Long-Term Stability and Reliability of Black Phosphorus Field-Effect Transistors.
ACS Nano, 10(10), 9543–9549. https://doi.org/10.1021/acsnano.6b04814 (reposiTUm)

13.   Vexler, M. I., Kareva, G. G., Illarionov, Yu. Yu., Grekhov, I. V. (2016).
Resonant Electron Tunneling and Related Charging Phenomena in Metal-Oxide-P+-Si Nanostructures.
Technical Physics Letters, 42(11), 1090–1093. https://doi.org/10.1134/s1063785016110109 (reposiTUm)

12.   Illarionov, Y. Y., Rzepa, G., Waltl, M., Knobloch, T., Grill, A., Furchi, M. M., Mueller, T., Grasser, T. (2016).
The Role of Charge Trapping in Mo₂/SiO₂ and MoS₂/hBN Field-Effect Transistors.
2D Materials, 3(3), 035004. https://doi.org/10.1088/2053-1583/3/3/035004 (reposiTUm)

11.   Vexler, M. I., Illarionov, Yu. Yu., Tyaginov, S. E., Grasser, T. (2015).
Adaptation of the Model of Tunneling in a Metal/CaF2/Si(111) System for Use in Industrial Simulators of MIS Devices.
Semiconductors, 49(2), 259–263. https://doi.org/10.1134/s1063782615020207 (reposiTUm)

10.   Illarionov, Y., Bina, M., Tyaginov, S., Rott, K., Kaczer, B., Reisinger, H., Grasser, T. (2015).
Extraction of the Lateral Position of Border Traps in Nanoscale MOSFETs.
IEEE Transactions on Electron Devices, 62(9), 2730–2737. https://doi.org/10.1109/ted.2015.2454433 (reposiTUm)

9.   Illarionov, Y., Smith, A., Vaziri, S., Ostling, M., Mueller, T., Lemme, M., Grasser, T. (2015).
Hot-Carrier Degradation and Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors: Similarities and Differences.
IEEE Transactions on Electron Devices, 62(11), 3876–3881. https://doi.org/10.1109/ted.2015.2480704 (reposiTUm)

8.   Illarionov, Yu. Yu., Vexler, M. I., Karner, M., Tyaginov, S. E., Cervenka, J., Grasser, T. (2015).
TCAD Simulation of Tunneling Leakage Current in CaF2/Si(111) MIS Structures.
Current Applied Physics, 15(2), 78–83. https://doi.org/10.1016/j.cap.2014.10.015 (reposiTUm)

7.   Illarionov, Y. Yu., Bina, M., Tyaginov, S. E., Grasser, T. (2014).
An Analytical Approach for the Determination of the Lateral Trap Position in Ultra-Scaled MOSFETs.
Japanese Journal of Applied Physics, 53(4S), 04EC22. https://doi.org/10.7567/jjap.53.04ec22 (reposiTUm)

6.   Illarionov, Yu. Yu., Smith, A. D., Vaziri, S., Ostling, M., Mueller, T., Lemme, M. C., Grasser, T. (2014).
Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors.
Applied Physics Letters, 105(14), 143507. https://doi.org/10.1063/1.4897344 (reposiTUm)

5.   Illarionov, Yu. Yu., Vexler, M. I., Fedorov, V. V., Suturin, S. M., Sokolov, N. S. (2014).
Electrical and Optical Characterization of Au/CaF₂/P-Si(111) Tunnel-Injection Diodes.
Journal of Applied Physics, 115(22), 223706. https://doi.org/10.1063/1.4882375 (reposiTUm)

4.   Tyaginov, S. E., Illarionov, Yu. Yu., Vexler, M. I., Bina, M., Cervenka, J., Franco, J., Kaczer, B., Grasser, T. (2014).
Modeling of Deep-Submicron Silicon-Based MISFETs With Calcium Fluoride Dielectric.
Journal of Computational Electronics, 13(3), 733–738. https://doi.org/10.1007/s10825-014-0593-9 (reposiTUm)

3.   Vexler, M. I., Tyaginov, S. E., Illarionov, Yu. Yu., Sing, Y. K., Shenp, A. D., Fedorov, V. V., Isakov, D. V. (2013).
A General Simulation Procedure for the Electrical Characteristics of Metal Insulator Semiconductor Tunnel Structures.
Semiconductors, 47(5), 686–694. https://doi.org/10.1134/s1063782613050230 (reposiTUm)

2.   Illarionov, Yu. Yu., Vexler, M. I., Fedorov, V. V., Suturin, S. M., Sokolov, N. S. (2013).
Light Emission From the Au/CaF2/P-Si(111) Capacitors: Evidence for an Elastic Electron Tunneling Through a Thin (1-2 Nm) Fluoride Layer.
Thin Solid Films, 545, 580–583. https://doi.org/10.1016/j.tsf.2013.07.050 (reposiTUm)

1.   Kareva, G. G., Vexler, M. I., Illarionov, Yu. Yu. (2013).
Transformation of a Metal-Insulator-Silicon Structure Into a Resonant-Tunneling Diode.
Microelectronic Engineering, 109, 270–273. https://doi.org/10.1016/j.mee.2013.03.063 (reposiTUm)

Contributions to Books

1.   Knobloch, T., Rzepa, G., Illarionov, Y. Y., Waltl, M., Polyushkin, D., Pospischil, A., Furchi, M., Mueller, T., Grasser, T. (2017).
(Invited) Impact of Gate Dielectrics on the Threshold Voltage in MoS2Transistors.
In D. Misra, S. De Gendt, M. Houssa, K. Kita, D. Landheer (Eds.), ECS Transactions (pp. 203–217). ECS Transactions. https://doi.org/10.1149/08001.0203ecst (reposiTUm)

Talks and Poster Presentations (with Proceedings-Entry)

38.   Illarionov, Y., Uzlu, B., Knobloch, T., Banshchikov, A., Sverdlov, V., Vexler, M., Sokolov, N., Waltl, M., Wang, Z., Neumaier, D., Lemme, M., Grasser, T. (2022).
CVD-GFETs With Record-Small Hysteresis Owing to 2nm Epitaxial CaF2 Insulators.
In Proceedings of the Device Research Conference (DRC) (pp. 121–122), Santa-Barbara, CA, USA. (reposiTUm)

37.   Sverdlov, V., Seiler, H., El-Sayed, A., Illarionov, Y., Kosina, H., Selberherr, S. (2022).
Edge Modes in Narrow Nanoribbons of Transition Metal Dichalcogenides in a Topological 1T.
In International Conference on Physics and its Application 2022 (pp. 36–37), San Francisco, USA. (reposiTUm)

36.   Knobloch, T., Illarionov, Y., Grasser, T. (2022).
Enhancing the Stability of 2D Material-Based Transistors via Fermi-Level Tuning.
In Abstracts of Graphene Week 2022, Munich, Germany. (reposiTUm)

35.   Knobloch, T., Illarionov, Y., Grasser, T. (2022).
Finding Suitable Gate Insulators for Reliable 2D FETs.
In 2022 IEEE International Reliability Physics Symposium (IRPS), Dallas, United States. https://doi.org/10.1109/irps48227.2022.9764499 (reposiTUm)

34.   Wen, C., Illarionov, Y., Frammelsberger, W., Knobloch, T., Grasser, T., Lanza, M. (2021).
Outstanding Dielectric Properties of Ultra-Thin CaF2 Dielectric Films.
In Bulletin of the American Physical Society, Los Angeles/USA, Austria. (reposiTUm)

33.   Illarionov, Y., Knobloch, T., Grasser, T. (2020).
(Invited) Where Are the Best Insulators for 2D Field-Effect Transistors?.
In ECS Meeting Abstracts (p. 844), Honolulu, Austria. https://doi.org/10.1149/ma2020-0110844mtgabs (reposiTUm)

32.   Knobloch, T., Michl, J., Waldhör, D., Illarionov, Y., Stampfer, B., Grill, A., Zhou, R., Wu, P., Waltl, M., Appenzeller, J., Grasser, T. (2020).
Analysis of Single Electron Traps in Nano-Scaled MoS2 FETs at Cryogenic Temperatures.
In Proceedings of the Device Research Conference (DRC) (pp. 52–53), Santa-Barbara, CA, USA. (reposiTUm)

31.   Illarionov, Y., Knobloch, T., Smithe, K., Waltl, M., Grady, R., Waldhör, D., Pop, E., Grasser, T. (2020).
Anomalous Instabilities in CVD-MoS2 FETs Suppressed by High-Quality Al2O3 Encapsulation.
In Proceedings of the Device Research Conference (DRC) (pp. 150–151), Santa-Barbara, CA, USA. (reposiTUm)

30.   Illarionov, Y., Banshchikov, A., Knobloch, T., Polyushkin, D., Wachter, S., Fedorov, V., Suturin, S., Stöger-Pollach, M., Vexler, M., Sokolov, N., Grasser, T. (2020).
Crystalline Calcium Fluoride: A Record-Thin Insulator for Nanoscale 2D Electronics.
In 2020 Device Research Conference (DRC), Santa-Barbara, CA, USA. https://doi.org/10.1109/drc50226.2020.9135160 (reposiTUm)

29.   Illarionov, Y., Knobloch, T., Waltl, M., Majumdar, S., Soikkeli, M., Kim, W., Wachter, S., Polyushkin, D., Arpiainen, S., Prunnila, M., Mueller, A., Grasser, T. (2020).
Low Variability and 1010 on/Off Current Ratio in Flexible MoS2 FETs With Al2O3 Encapsulation Improved by Parylene N.
In Proceedings of the Electronic Materials Conference (EMC) (p. 25), Columbus, OH, USA - virtual. (reposiTUm)

28.   Knobloch, T., Illarionov, Y., Uzlu, B., Waltl, M., Neumaier, D., Lemme, M., Grasser, T. (2020).
The Impact of the Graphene Work Function on the Stability of Flexible GFETs.
In Proceedings of the Electronic Materials Conference (EMC), Columbus, OH, USA - virtual. (reposiTUm)

27.   Illarionov, Y., Banshchikov, A., Vexler, M., Polyushkin, D., Wachter, S., Thesberg, M., Sokolov, N., Mueller, T., Grasser, T. (2019).
Epitaxial CaF2: A Route Towards Scalable 2D Electronics.
In Proceedings of the International Conference on Physics of 2D Crystals (ICP2DC4) (p. 69), Hangzhou, China. (reposiTUm)

26.   Illarionov, Y., Grasser, T. (2019).
Reliability of 2D Field-Effect Transistors: From First Prototypes to Scalable Devices.
In 2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore. https://doi.org/10.1109/ipfa47161.2019.8984799 (reposiTUm)

25.   Illarionov, Y., Smithe, K., Waltl, M., Grady, R., Deshmukh, S., Pop, E., Grasser, T. (2018).
Annealing and Encapsulation of CVD-MoS2 FETs With 1010On/Off Current Ratio.
In 2018 76th Device Research Conference (DRC), Santa-Barbara, CA, USA. https://doi.org/10.1109/drc.2018.8442242 (reposiTUm)

24.   Illarionov, Y., Molina- Mendoza, A., Waltl, M., Knobloch, T., Furchi, M., Mueller, T., Grasser, T. (2018).
Reliability of Next-Generation Field-Effect Transistors With Transition Metal Dichalcogenides.
In 2018 IEEE International Reliability Physics Symposium (IRPS), Waikoloa, HI, USA. https://doi.org/10.1109/irps.2018.8353605 (reposiTUm)

23.   Illarionov, Y., Rzepa, G., Waltl, M., Knobloch, T., Kim, J., Akinwande, D., Grasser, T. (2017).
Accurate Mapping of Oxide Traps in Highly-Stable Black Phosphorus FETs.
In 2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Toyama, Japan. https://doi.org/10.1109/edtm.2017.7947532 (reposiTUm)

22.   Illarionov, Y., Waltl, M., Smithe, K., Pop, E., Grasser, T. (2017).
Encapsulated MoS2 FETs With Improved Performance and Reliability.
In Proceedings of the GRAPCHINA 2017 (p. 1), Nanjing, China. (reposiTUm)

21.   Knobloch, T., Rzepa, G., Illarionov, Y., Waltl, M., Polyushkin, D., Pospischil, A., Furchi, M., Müller, T., Grasser, T. (2017).
Impact of Gate Dielectrics on the Threshold Voltage in MoS2 Transistors.
In Meeting Abstracts (p. 2), Honolulu, Austria. (reposiTUm)

20.   Knobloch, T., Rzepa, G., Illarionov, Y., Waltl, M., Schanovsky, F., Jech, M., Stampfer, B., Furchi, M., Müller, T., Grasser, T. (2017).
Physical Modeling of the Hysteresis in M0S2 Transistors.
In 2017 47th European Solid-State Device Research Conference (ESSDERC), Montreux, Austria. https://doi.org/10.1109/essderc.2017.8066647 (reposiTUm)

19.   Illarionov, Y., Waltl, M., Jech, M., Kim, J., Akinwande, D., Grasser, T. (2017).
Reliability of Black Phosphorus Field-Effect Transistors With Respect to Bias-Temperature and Hot-Carrier Stress.
In 2017 IEEE International Reliability Physics Symposium (IRPS), Phoenix. https://doi.org/10.1109/irps.2017.7936338 (reposiTUm)

18.   Ullmann, B., Jech, M., Tyaginov, S., Waltl, M., Illarionov, Y., Grill, A., Puschkarsky, K., Reisinger, H., Grasser, T. (2017).
The Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on Single Oxide Defects.
In 2017 IEEE International Reliability Physics Symposium (IRPS), Phoenix. https://doi.org/10.1109/irps.2017.7936424 (reposiTUm)

17.   Illarionov, Y., Rzepa, G., Waltl, M., Pandey, H., Kataria, S., Passi, V., Lemme, M., Grasser, T. (2016).
A Systematic Study of Charge Trapping in Single-Layer Double-Gated GFETs.
In 74#^{th }Device Research Conference Digest (pp. 89–90), Santa Barbara , California, Austria. (reposiTUm)

16.   Illarionov, Y., Waltl, M., Furchi, M., Mueller, T., Grasser, T. (2016).
Reliability of Single-Layer MoS<inf>2</inf> Field-Effect Transistors With SiO<inf>2</inf> And hBN Gate Insulators.
In 2016 IEEE International Reliability Physics Symposium (IRPS), Waikoloa, HI, USA. https://doi.org/10.1109/irps.2016.7574543 (reposiTUm)

15.   Illarionov, Y., Waltl, M., Kim, J., Akinwande, D., Grasser, T. (2016).
Temperature-Dependent Hysteresis in Black Phosphorus FETs.
In Proceedings of the 2016 Graphene Week, Delft, Netherlands. (reposiTUm)

14.   Illarionov, Y., Waltl, M., Smith, A., Vaziri, S., Ostling, M., Lemme, M., Grasser, T. (2015).
Back Gate Bias-Temperature Instability in Single-Layer Double-Gated Graphene Field-Effect Transistors.
In Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials (SSDM 2015) (pp. 650–651), Fukuoka, Japan. (reposiTUm)

13.   Illarionov, Y., Vexler, M., Fedorov, V., Suturin, S., Sokolov, N., Grasser, T. (2015).
Characterization of Epitaxial Calcium Fluoride as a Dielectric Material for Ultra-Thin Barrier Layers in Silicon Microelectronics.
In Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials (SSDM 2015) (pp. 330–331), Fukuoka, Japan. (reposiTUm)

12.   Illarionov, Y., Waltl, M., Smith, A., Vaziri, S., Ostling, M., Mueller, T., Lemme, M., Grasser, T. (2015).
Hot-Carrier Degradation in Single-Layer Double-Gated Graphene Field-Effect Transistors.
In 2015 IEEE International Reliability Physics Symposium, Phoenix. https://doi.org/10.1109/irps.2015.7112834 (reposiTUm)

11.   Illarionov, Y., Waltl, M., Smith, A., Vaziri, S., Ostling, M., Lemme, M., Grasser, T. (2015).
Impact of Hot Carrier Stress on the Defect Density and Mobility in Double-Gated Graphene Field-Effect Transistors.
In EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Bologna, Italy. https://doi.org/10.1109/ulis.2015.7063778 (reposiTUm)

10.   Illarionov, Y., Waltl, M., Smith, A., Vaziri, S., Ostling, M., Lemme, M., Grasser, T. (2015).
Interplay Between Hot Carrier and Bias Stress Components in Single-Layer Double-Gated Graphene Field-Effect Transistors.
In 2015 45th European Solid State Device Research Conference (ESSDERC), Montreux, Austria. https://doi.org/10.1109/essderc.2015.7324741 (reposiTUm)

9.   Illarionov, Y., Waltl, M., Smith, A., Vaziri, S., Ostling, M., Lemme, M., Grasser, T. (2015).
Temperature Dependence of Hot Carrier and Positive Bias Stress Degradation in Double-Gated Graphene Field-Effect Transistors.
In Abstracts Graphene 2015 (p. 1), Bilbao, Spain. (reposiTUm)

8.   Illarionov, Y., Bina, M., Tyaginov, S., Rott, K., Reisinger, H., Kaczer, B., Grasser, T. (2014).
A Reliable Method for the Extraction of the Lateral Position of Defects in Ultra-Scaled MOSFETs.
In Proceedings of the International Reliability Physics Symposium (IRPS) (pp. XT13.1–XT13.6), Phoenix. (reposiTUm)

7.   Illarionov, Y., Smith, A., Vaziri, S., Ostling, M., Müller, T., Lemme, M., Grasser, T. (2014).
Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors: A Reliability Challenge.
In 2014 IEEE Silicon Nanoelectronics Workshop (pp. 29–30), Honolulu. (reposiTUm)

6.   Vexler, M., Illarionov, Y., Tyaginov, S., Sokolov, N., Fedorov, V., Grasser, T. (2014).
Simulation of the Electrical Characteristics of the Devices With Thin Calcium Fluoride Films on Silicon-(111) Using MINIMOS-NT.
In Materials of XIII International conference DIELECTRICS (pp. 159–162), St-Petersburg, Russia. (reposiTUm)

5.   Illarionov, Y., Tyaginov, S., Bina, M., Grasser, T. (2013).
A Method to Determine the Lateral Trap Position in Ultra-Scaled MOSFETs.
In Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials(SSDM) (pp. 728–729), Tsukuba, Austria. (reposiTUm)

4.   Illarionov, Y., Vexler, M., Fedorov, V., Suturin, S., Isakov, D., Grekhov, I. (2013).
Optical Characterization of the Injection Properties of MIS Structures With Thin CaF2 and HfO2/SiO2 Insulating Layers on Silicon.
In Abstracts of XI Russian Conference on Semiconductor Physics (p. 229), St-Petersburg, Russia. (reposiTUm)

3.   Kareva, G., Vexler, M., Illarionov, Y. (2013).
Transformation of a Metal-Insulator-Silicon Structure Into a Resonant-Tunneling Diode.
In Book of Abstracts (pp. 246–247), Cracow, Poland. (reposiTUm)

2.   Vexler, M., Illarionov, Y., Suturin, S., Fedorov, V., Sokolov, N. (2013).
Tunnel Charge Transport in Au/CaF2/Si(111) System.
In Abstracts of XI Russian Conference on Semiconductor Physics (p. 74), St-Petersburg, Russia. (reposiTUm)

1.   Tyaginov, S., Osintsev, D., Illarionov, Y., Park, J., Enichlmair, H., Vexler, M., Grasser, T. (2013).
Tunnelling of Strongly Non-Equilibrium Carriers in the Transistors of Traditional Configuration.
In Abstracts of XI Russian Conference on Semiconductor Physics (p. 441), St-Petersburg, Russia. (reposiTUm)

Talks and Poster Presentations (without Proceedings-Entry)

10.   Illarionov, Y., Knobloch, T., Uzlu, B., Sokolov, N. S., Lemme, M. C., Grasser, T. (2022).
Highly Stable GFETs With 2nm Crystalline CaF2 Insulators.
6th International Conference on Physics of 2D materials based electronics and optoelectronics (ICP2DC6, 2022), Yerevan, Armenia, Non-EU. (reposiTUm)

9.   Illarionov, Y., Knobloch, T., Waltl, M., Smets, Q., Panarella, L., Kaczer, B., Schram, T., Brems, S., Cott, D., Asselberghs, I., Grasser, T. (2022).
Top Gate Length Dependence of Hysteresis in 300mm FAB MoS2 FETs.
Graphne 2022, Aachen, Germany, EU. (reposiTUm)

8.   Illarionov, Y., Knobloch, T., Grasser, T. (2021).
Crystalline Insulators for Scalable 2D Nanoelectronics.
International Conference on Insulating Films on Semiconductors (INFOS), Cracow, Poland, EU. (reposiTUm)

7.   Illarionov, Y., Banshchikov, A. G., Sokolov, N. S., Fedorov, V. V., Suturin, S. M., Vexler, M. I., Knobloch, T., Polyushkin, D. K., Mueller, T., Grasser, T. (2021).
Epitaxial Fluorides as a Universal Platform for More Moore and More Than Moore Electronics Based on 2D Materials.
Scientific Council Meeting of the Russian Academy of Sciences, Moscow, Russia, Non-EU. (reposiTUm)

6.   Illarionov, Y., Banshchikov, A. G., Polyushkin, D. K., Wachter, S., Vexler, M. I., Sokolov, N. S., Müller, T., Grasser, T. (2019).
CaF2 Insulators for Ultrascaled 2D Field Effect Transistors.
Graphene Week, Delft, Netherlands, EU. (reposiTUm)

5.   Majumdar, S., Soikkeli, M., Kim, W., Illarionov, Y., Wachter, S., Polyushkin, D. K., Arpiainen, S., Prunnila, M. (2019).
Passivation Controlled Field Effect Mobility in 2D Semiconductor Based FET Devices for High Performance Logic Circuit Development on Flexible Platform.
Graphene Week, Delft, Netherlands, EU. (reposiTUm)

4.   Illarionov, Y., Banshchikov, A. G., Polyushkin, D. K., Wachter, S., Vexler, M. I., Sokolov, N. S., Müller, T., Grasser, T. (2019).
Reliability and Thermal Stability of MoS2 FETs With Ultrathin CaF2 Insulator.
IEEE Nanotechnology Materials and Devices Conference (NMDC), Portland, USA, Non-EU. (reposiTUm)

3.   Illarionov, Y., Stampfer, B., Zhang, F., Knobloch, T., Wu, P., Waltl, M., Grill, A., Appenzeller, J., Grasser, T. (2018).
Characterization of Single Defects: From Si to MoS2 FETs.
International Conference on Physics of 2D Crystals (ICP2C3), Valetta, Malta, EU. (reposiTUm)

2.   Illarionov, Y. (2018).
On the Way to Commercial 2D Electronics...
 2nd Zhejiang Sci-Tech University Forum for International Young Scholars, Hangzhou, China, Non-EU. (reposiTUm)

1.   Illarionov, Y., Waltl, M., Knobloch, T., Rzepa, G., Grasser, T. (2017).
Reliability Perspective of 2D Electronics.
International Conference on Physics of 2D Crystals (ICP2C2), Ha Long, Vietnam, Non-EU. (reposiTUm)

Doctor's Theses (authored and supervised)

2.   Illarionov, Y. (2016).
Characterization and Modeling of Charged Defects in Silicon and 2D Field-Effect Transistors
 Technische Universität Wien. https://doi.org/10.34726/hss.2016.34580 (reposiTUm)

1.  Yu. Illarionov:
"Tunnel Carrier Transport and Related Physical Phenomena in Gold - Calcium Fluoride - Silicon (111) Structures";
Supervisor, Reviewer: M. I. Vexler, A. Baraban, L. Goray; Ioffe Institute, 2015; oral examination: 2015-01-22.