Publications Goran Kaiblinger-Grujin
20 records
| 13. | G. Kaiblinger-Grujin, T. Grasser, S. Selberherr: "A Physically-Based Electron Mobility Model for Silicon Device Simulation"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 1998-09-02 - 1998-09-04; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4, 312 - 315 doi:10.1007/978-3-7091-6827-1_78. BibTeX |
| 12. | V. Palankovski, G. Kaiblinger-Grujin, H. Kosina, S. Selberherr: "A Dopant-Dependent Band Gap Narrowing Model Application for Bipolar Device Simulation"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 1998-09-02 - 1998-09-04; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4, 105 - 108 doi:10.1007/978-3-7091-6827-1_29. BibTeX |
| 11. | V. Palankovski, G. Kaiblinger-Grujin, S. Selberherr: "Implications of Dopant-Dependent Low-Field Mobility and Band Gap Narrowing on the Bipolar Device Performance"; Talk: L. Brogiato, D.V. Camin, G. Pessina (ed); European Workshop on Low Temperature Electronics (WOLTE), San Miniato; 1998-06-24 - 1998-06-26; in "Proceedings European Workshop on Low Temperature Electronics 3", (1998), 8, 91 - 94 doi:10.1051/jp4:1998321. BibTeX |
| 10. | V. Palankovski, G. Kaiblinger-Grujin, S. Selberherr: "Study of Dopant-Dependent Band Gap Narrowing in Compound Semiconductor Devices"; Poster: International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technology, Cardiff; 1998-06-21 - 1998-06-24; in "Abstracts Intl. Workshop on Expert Evaluation & Control of Compound Semicond. Mat. & Technology", (1998), 15. BibTeX |
| 9. | G. Kaiblinger-Grujin, H. Kosina, S. Selberherr: "A Universal Low-Field Electron Mobility Model for Semiconductor Device Simulation"; Poster: International Conference on Modeling and Simulation of Microsystems (MSM), Santa Clara; 1998-05-06 - 1998-05-08; in "Proceedings Intl. Conf. on Modeling and Simulation of Microsystems", (1998), ISBN: 0-9666135-0-3, M2.4.1.. BibTeX |
| 8. | C. Köpf, G. Kaiblinger-Grujin, H. Kosina, S. Selberherr: "Reexamination of Electron Mobility Dependence on Dopants in GaAs"; Talk: European Solid-State Device Research Conference (ESSDERC), Stuttgart; 1997-09-22 - 1997-09-24; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1997), ISBN: 2-86332-221-4, 304 - 307. BibTeX |
| 7. | H. Kosina, G. Kaiblinger-Grujin, S. Selberherr: "A New Approach to Ionized-Impurity Scattering"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1997), ISBN: 0-7803-3775-1, 205 - 208 doi:10.1109/SISPAD.1997.621373. BibTeX |
| 6. | G. Kaiblinger-Grujin, H. Kosina, C. Köpf, S. Selberherr: "Influence of Dopant Species on Electron Mobility in Heavily Doped Semiconductors"; Talk: International Conference on Defects in Semiconductors, Aveiro; 1997-07-21 - 1997-07-25; in "Proceedings Intl. Conf. on Defects in Semiconductors", (1997), Proceedings Part 2, Section 11, 939 - 944. BibTeX |
| 5. | G. Kaiblinger-Grujin, H. Kosina, S. Selberherr: "Electron Mobility in Doped Semiconductors"; Talk: International Conference on Computational Physics, Singapore; 1997-06-02 - 1997-06-04; in "Abstracts Intl. Conf. on Computational Physics", (1997), 30 - 31. BibTeX |
| 4. | C. Köpf, G. Kaiblinger-Grujin, H. Kosina, S. Selberherr: "Influence of Dopant Species on Electron Mobility in InP"; Talk: International Conference on Indium Phosphide an Related Materials, Hyannis; 1997-05-11 - 1997-05-15; in "Proceedings Intl. Conf. on Indium Phosphide and Related Materials", (1997), 280 - 283. BibTeX |
| 3. | G. Kaiblinger-Grujin, H. Kosina, S. Selberherr: "Monte Carlo Simulation of Electron Transport in Doped Silicon"; Talk: High Performance Computing Asia Conference, Seoul; 1997-04-28 - 1997-05-02; in "Proceedings High Performance Computing Asia 1997 Conf.", (1997), 444 - 449. BibTeX |
| 2. | G. Kaiblinger-Grujin, H. Kosina, S. Selberherr: "Dependence of Electron Mobility on Dopants in Heavily Doped Semiconductors"; Talk: Condensed Matter Physics Meeting, Pakota Island; 1997-02-04 - 1997-02-07; in "Abstracts 21. Condensed Matter Physics Meeting", (1997), TA02. BibTeX |
| 1. | G. Kaiblinger-Grujin, H. Kosina: "An Improved Ionized Impurity Scattering Model for Monte Carlo Calculations"; Poster: International Workshop on Computational Electronics (IWCE), Tempe, AZ, USA; 1995-10-30 - 1995-11-02; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (1995), 25. BibTeX |
| 1. | G. Kaiblinger-Grujin, C. Köpf, H. Kosina, S. Selberherr: "Dependence of Electron Mobility on Impurities in Compound Semiconductors"; Talk: III-V Semiconductor Device Simulation Workshop, Turin; 1997-10-16 - 1997-10-17; . BibTeX |
| 1. | G. Kaiblinger-Grujin: "Physikalische Modellierung und Monte-Carlo-Simulation der Elektronenbeweglichkeit in Silizium"; Reviewer: S. Selberherr, E. Gornik; Institut für Mikroelektronik, 1997, oral examination: 1998-03-13. BibTeX |