Skip to main navigation Skip to main content

Publications Goran Kaiblinger-Grujin

20 records

Publications in Scientific Journals

5.  V. Palankovski, G. Kaiblinger-Grujin, S. Selberherr:
"Study of Dopant-Dependent Band Gap Narrowing in Compound Semiconductor Devices";
Materials Science and Engineering B, 66 (1999), 1-3; 46 - 49. https://doi.org/10.1016/S0921-5107(99)00118-X

4.  G. Kaiblinger-Grujin, H. Kosina:
"An Improved Ionized Impurity Scattering Model For Monte Carlo Calculations";
VLSI Design, 6 (1998), 1-4; 209 - 212. https://doi.org/10.1155/1998/87014

3.  G. Kaiblinger-Grujin, H. Kosina, S. Selberherr:
"Influence of the Doping Element on the Electron Mobility in n-Silicon";
Journal of Applied Physics, 83 (1998), 6; 3096 - 3101. https://doi.org/10.1063/1.367067

2.  H. Kosina, G. Kaiblinger-Grujin:
"Ionized-Impurity Scattering of Majority Electrons in Silicon";
Solid-State Electronics, 42 (1998), 3; 331 - 338. https://doi.org/10.1016/S0038-1101(97)00199-8

1.  G. Kaiblinger-Grujin, H. Kosina, C. Köpf, S. Selberherr:
"Influence of Dopant Species on Electron Mobility in Heavily Doped Semiconductors";
Materials Science Forum, 258-263 (1997), 939 - 944. https://doi.org/10.4028/www.scientific.net/MSF.258-263.939

Talks and Poster Presentations (with Proceedings-Entry)

13.  V. Palankovski, G. Kaiblinger-Grujin, H. Kosina, S. Selberherr:
"A Dopant-Dependent Band Gap Narrowing Model Application for Bipolar Device Simulation";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4; 105 - 108. https://doi.org/10.1007/978-3-7091-6827-1_29

12.  G. Kaiblinger-Grujin, T. Grasser, S. Selberherr:
"A Physically-Based Electron Mobility Model for Silicon Device Simulation";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4; 312 - 315. https://doi.org/10.1007/978-3-7091-6827-1_78

11.  G. Kaiblinger-Grujin, H. Kosina, S. Selberherr:
"A Universal Low-Field Electron Mobility Model for Semiconductor Device Simulation";
Poster: International Conference on Modeling and Simulation of Microsystems (MSM), Santa Clara; 1998-05-06 - 1998-05-08; in: "Proceedings Intl. Conf. on Modeling and Simulation of Microsystems", (1998), ISBN: 0-9666135-0-3; M2.4.1.

10.  V. Palankovski, G. Kaiblinger-Grujin, S. Selberherr:
"Implications of Dopant-Dependent Low-Field Mobility and Band Gap Narrowing on the Bipolar Device Performance";
Talk: European Workshop on Low Temperature Electronics (WOLTE), San Miniato; 1998-06-24 - 1998-06-26; in: "Proceedings European Workshop on Low Temperature Electronics 3", L. Brogiato, D.V. Camin, G. Pessina (ed.); Journal de Physique IV, 8 (1998), 91 - 94. https://doi.org/10.1051/jp4:1998321

9.  V. Palankovski, G. Kaiblinger-Grujin, S. Selberherr:
"Study of Dopant-Dependent Band Gap Narrowing in Compound Semiconductor Devices";
Poster: International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technology, Cardiff; 1998-06-21 - 1998-06-24; in: "Abstracts Intl. Workshop on Expert Evaluation & Control of Compound Semicond. Mat. & Technology", PSA, (1998), 15.

8.  H. Kosina, G. Kaiblinger-Grujin, S. Selberherr:
"A New Approach to Ionized-Impurity Scattering";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1997), ISBN: 0-7803-3775-1; 205 - 208. https://doi.org/10.1109/SISPAD.1997.621373

7.  G. Kaiblinger-Grujin, H. Kosina, S. Selberherr:
"Dependence of Electron Mobility on Dopants in Heavily Doped Semiconductors";
Talk: Condensed Matter Physics Meeting, Pakota Island; 1997-02-04 - 1997-02-07; in: "Abstracts 21. Condensed Matter Physics Meeting", (1997), TA02.

6.  G. Kaiblinger-Grujin, H. Kosina, S. Selberherr:
"Electron Mobility in Doped Semiconductors";
Talk: International Conference on Computational Physics, Singapore; 1997-06-02 - 1997-06-04; in: "Abstracts Intl. Conf. on Computational Physics", (1997), 30 - 31.

5.  G. Kaiblinger-Grujin, H. Kosina, C. Köpf, S. Selberherr:
"Influence of Dopant Species on Electron Mobility in Heavily Doped Semiconductors";
Talk: International Conference on Defects in Semiconductors, Aveiro; 1997-07-21 - 1997-07-25; in: "Proceedings Intl. Conf. on Defects in Semiconductors", Proceedings Part 2, Section 11 (1997), 939 - 944.

4.  C. Köpf, G. Kaiblinger-Grujin, H. Kosina, S. Selberherr:
"Influence of Dopant Species on Electron Mobility in InP";
Talk: International Conference on Indium Phosphide an Related Materials, Hyannis; 1997-05-11 - 1997-05-15; in: "Proceedings Intl. Conf. on Indium Phosphide and Related Materials", (1997), 280 - 283.

3.  G. Kaiblinger-Grujin, H. Kosina, S. Selberherr:
"Monte Carlo Simulation of Electron Transport in Doped Silicon";
Talk: High Performance Computing Asia Conference, Seoul; 1997-04-28 - 1997-05-02; in: "Proceedings High Performance Computing Asia 1997 Conf.", (1997), 444 - 449.

2.  C. Köpf, G. Kaiblinger-Grujin, H. Kosina, S. Selberherr:
"Reexamination of Electron Mobility Dependence on Dopants in GaAs";
Talk: European Solid-State Device Research Conference (ESSDERC), Stuttgart; 1997-09-22 - 1997-09-24; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1997), ISBN: 2-86332-221-4; 304 - 307.

1.  G. Kaiblinger-Grujin, H. Kosina:
"An Improved Ionized Impurity Scattering Model for Monte Carlo Calculations";
Poster: International Workshop on Computational Electronics (IWCE), Tempe, AZ, USA; 1995-10-30 - 1995-11-02; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (1995), 25.

Doctor's Theses (authored and supervised)

1.  G. Kaiblinger-Grujin:
"Physikalische Modellierung und Monte-Carlo-Simulation der Elektronenbeweglichkeit in Silizium";
Supervisor, Reviewer: S. Selberherr, E. Gornik; Institut für Mikroelektronik, 1997; oral examination: 1998-03-13.

Diploma and Master Theses (authored and supervised)

1.  G. Kaiblinger-Grujin, C. Köpf, H. Kosina, S. Selberherr:
"Dependence of Electron Mobility on Impurities in Compound Semiconductors";
Talk: III-V Semiconductor Device Simulation Workshop, Turin; 1997-10-16 - 1997-10-17.