Publications Gerhard Karlowatz
19 records
| 6. | S. Floss, M. Kaltenbacher, G. Karlowatz: "Application and simulation of Micro-Perforated Panels in HVAC Systems"; SAE International, 1, (2018), 2018015141 - 2018015148 doi:10.4271/2018-01-1514. BibTeX |
| 5. | G. Karlowatz, W. Wessner, H. Kosina: "Effect of Band Structure Discretization on the Performance of Full-Band Monte Carlo Simulation"; Mathematics and Computers in Simulation, 79, (2008), 972 - 979 doi:10.1016/j.matcom.2008.02.021. BibTeX |
| 4. | V. Sverdlov, G. Karlowatz, S. Dhar, H. Kosina, S. Selberherr: "Two-Band k.p Model for the Conduction Band in Silicon: Impact of Strain and Confinement on Band Structure and Mobility"; Solid-State Electronics, 52, (2008), 1563 - 1568 doi:10.1016/j.sse.2008.06.019. BibTeX |
| 3. | E. Ungersböck, S. Dhar, G. Karlowatz, H. Kosina, S. Selberherr: "Physical Modeling of Electron Mobility Enhancement for Arbitrarily Strained Silicon"; Journal of Computational Electronics, 6, (2007), 55 - 58 doi:10.1007/s10825-006-0047-0. BibTeX |
| 2. | E. Ungersböck, S. Dhar, G. Karlowatz, V. Sverdlov, H. Kosina, S. Selberherr: "The Effect of General Strain on the Band Structure and Electron Mobility of Silicon"; IEEE Transactions on Electron Devices, 54, (2007), 2183 - 2190 doi:10.1109/TED.2007.902880. BibTeX |
| 1. | S. Dhar, H. Kosina, G. Karlowatz, E. Ungersböck, T. Grasser, S. Selberherr: "High-Field Electron Mobility Model for Strained-Silicon Devices"; IEEE Transactions on Electron Devices, 53, (2006), 3054 - 3062 doi:10.1109/TED.2006.885639. BibTeX |
| 1. | G. Karlowatz, E. Ungersböck, W. Wessner, H. Kosina, S. Selberherr: "Analysis of Hole Transport in Arbitrarily Strained Germanium"; in "SiGe and Ge: Materials, Processing, and Devices, Vol. 3, No. 7", issued by The Electrochemical Society; D. Harame, J. Boquet, M. Caymax, J. Cressler, H. Iwai, S. Koester, G. Masini, J. Murota, A. Reznicek, K. Rim, B. Tillack, S. Zaima (ed); ECS Transactions, 2006, ISBN: 1-56677-507-8, 443 - 450 doi:10.1149/1.2355842. BibTeX |
| 10. | V. Sverdlov, G. Karlowatz, S. Dhar, H. Kosina, S. Selberherr: "Two-Band k·p Model for the Conduction Band in Silicon: Impact of Strain and Confinement on Band Structure and Mobility"; Talk: International Semiconductor Device Research Symposium (ISDRS), Maryland; 2007-12-12 - 2007-12-14; in "2007 International Semiconductor Device Research Symposium", (2007), ISBN: 978-1-4244-1892-3, 2 page(s) . BibTeX |
| 9. | V. Sverdlov, G. Karlowatz, H. Kosina, S. Selberherr: "Two-Band k.p Model for the Conduction Band in Silicon"; Talk: The European Simulation and Modelling Conference (ESM), Malta; 2007-10-22 - 2007-10-24; in "Proceedings European Simulation and Modeling Conference", (2007), ISBN: 978-90-77381-36-6, 220 - 224. BibTeX |
| 8. | V. Sverdlov, G. Karlowatz, E. Ungersböck, H. Kosina: "Influence of Uniaxial [110] Stress on the Silicon Conduction Band Structure: Stress Dependence of the Nonparabolicity Parameter"; Poster: T. Grasser, S. Selberherr (ed); International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 2007-09-25 - 2007-09-27; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2007), 12, ISBN: 978-3-211-72860-4, 329 - 332 doi:10.1007/978-3-211-72861-1_79. BibTeX |
| 7. | G. Karlowatz, E. Ungersböck, W. Wessner, H. Kosina, S. Selberherr: "Analysis of Hole Transport in Arbitrarily Strained Germanium"; Talk: Meeting of the Electrochemical Society, SiGe and Germanium: Materials, Processing, and Devices, Cancun; 2006-10-29 - 2006-11-03; in "210th ECS Meeting", (2006), ISSN: 1091-8213, 1 page(s) . BibTeX |
| 6. | G. Karlowatz, E. Ungersböck, W. Wessner, H. Kosina: "Full-Band Monte Carlo Analysis of Electron Transport in Arbitrary Strained Silicon"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 2006-09-06 - 2006-09-08; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5, 63 - 66 doi:10.1109/SISPAD.2006.282839. BibTeX |
| 5. | E. Ungersböck, S. Dhar, G. Karlowatz, H. Kosina, S. Selberherr: "Physical Modeling of Electron Mobility Enhancement for Arbitrarily Strained Silicon"; Poster: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 2006-05-25 - 2006-05-27; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1, 141 - 142. BibTeX |
| 4. | S. Dhar, H. Kosina, G. Karlowatz, E. Ungersböck, T. Grasser, S. Selberherr: "A Tensorial High-Field Electron Mobility Model for Strained Silicon"; Poster: International SiGe Technology and Device Meeting (ISTDM), Princeton; 2006-05-15 - 2006-05-17; in "2006 International SiGe Technology and Device Meeting Conference Digest", (2006), ISBN: 1-4244-0461-4, 72 - 73. BibTeX |
| 3. | G. Karlowatz, W. Wessner, H. Kosina: "Effect of Band Structure Discretization on the Performance of Full-Band Monte Carlo Simulation"; Talk: International Symposium on Mathematical Modeling (MATHMOD), Wien; 2006-02-08 - 2006-02-10; in "5th Mathmod Vienna Proceedings", (2006), ISBN: 3-901608-30-3, 4-1 - 4-6. BibTeX |
| 2. | S. Dhar, G. Karlowatz, E. Ungersböck, H. Kosina, S. Selberherr: "Modeling of Velocity-Field Characteristics in Strained Silicon"; Poster: International Workshop on the Physics of Semiconductor Devices (IWPSD), New Dehli; 2005-12-13 - 2005-12-17; in "Proceedings of the XIII International Workshop on Physics of Semiconductor Devices", (2005), Vol. 2, ISBN: 81-7764-947-7, 1060 - 1063. BibTeX |
| 1. | S. Dhar, G. Karlowatz, E. Ungersböck, H. Kosina: "Numerical and Analytical Modeling of the High-Field Electron Mobility in Strained Silicon"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 2005-09-01 - 2005-09-03; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5, 223 - 226 doi:10.1109/SISPAD.2005.201513. BibTeX |
| 1. | G. Karlowatz: "Advanced Monte Carlo Simulation for Semiconductor Devices"; Reviewer: H. Kosina, E. Benes; Institut für Mikroelektronik, 2009, oral examination: 2009-06-24 doi:10.34726/hss.2009.16312. BibTeX |
| 1. | H. Ceric, S. Dhar, G. Karlowatz, L. Li, M. Pourfath, S. Selberherr: "VISTA Status Report June 2007"; (2007), 29 page(s) . BibTeX |