Publications Markus Karner
67 records
| 14. | Yu. Illarionov, M. I. Vexler, M. Karner, S. E. Tyaginov, J. Cervenka, T. Grasser: "TCAD Simulation of Tunneling Leakage Current in CaF2/Si(111) MIS Structures"; Current Applied Physics, 15, (2015), 78 - 83 doi:10.1016/j.cap.2014.10.015. BibTeX |
| 13. | Z. Stanojevic, O. Baumgartner, L. Filipovic, H. Kosina, M. Karner, C. Kernstock, P. Prause: "Consistent Low-Field Mobility Modeling for Advanced MOS Devices"; Solid-State Electronics, 112, (2015), 37 - 45 doi:10.1016/j.sse.2015.02.008. BibTeX |
| 12. | O. Baumgartner, Z. Stanojevic, K. Schnass, M. Karner, H. Kosina: "VSP - A Quantum-Electronic Simulation Framework"; Journal of Computational Electronics, 12, (2013), 701 - 721 doi:10.1007/s10825-013-0535-y. BibTeX |
| 11. | O. Baumgartner, M. Karner, V. Sverdlov, H. Kosina: "Electron Subband Structure in Strained Silicon UTB Films from the Hensel-Hasegawa-Nakayama Model - Part 2 Efficient Self-Consistent Numerical Solution of the k.p Schrödinger Equation"; Solid-State Electronics, 54, (2010), 143 - 148 doi:10.1016/j.sse.2009.12.010. BibTeX |
| 10. | S. E. Tyaginov, I. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser: "Interface Traps Density-of-States as a Vital Component for Hot-Carrier Degradation Modeling"; Microelectronics Reliability, 50, (2010), 1267 - 1272 doi:10.1016/j.microrel.2010.0. BibTeX |
| 9. | W. Gös, M. Karner, V. Sverdlov, T. Grasser: "Charging and Discharging of Oxide Defects in Reliability Issues"; IEEE Transactions on Device and Materials Reliability, 8, (2008), 491 - 500 doi:10.1109/TDMR.2008.2005247. BibTeX |
| 8. | M. Vasicek, J. Cervenka, M. Wagner, M. Karner, T. Grasser: "A 2D Non-Parabolic Six-Moments Model"; Solid-State Electronics, 52, (2008), 1606 - 1609 doi:10.1016/j.sse.2008.06.010. BibTeX |
| 7. | M. Vasicek, J. Cervenka, M. Wagner, M. Karner, T. Grasser: "Parameter Modeling for Higher-Order Transport Models in UTB SOI MOSFETs"; Journal of Computational Electronics, 7, (2008), 168 - 173 doi:10.1007/s10825-008-0239-x. BibTeX |
| 6. | S. Holzer, A. Sheikholeslami, M. Karner, T. Grasser, S. Selberherr: "Comparison of Deposition Models for a TEOS LPCVD Process"; Microelectronics Reliability, 47, (2007), 623 - 625 doi:10.1016/j.microrel.2007.01.058. BibTeX |
| 5. | M. Karner, A. Gehring, S. Holzer, M. Pourfath, M. Wagner, W. Gös, M. Vasicek, O. Baumgartner, Ch. Kernstock, K. Schnass, G. Zeiler, T. Grasser, H. Kosina, S. Selberherr: "A Multi-Purpose Schrödinger-Poisson Solver for TCAD Applications"; Journal of Computational Electronics, 6, (2007), 179 - 182 doi:10.1007/s10825-006-0077-7. BibTeX |
| 4. | M. Karner, A. Gehring, M. Wagner, R. Entner, S. Holzer, W. Gös, M. Vasicek, T. Grasser, H. Kosina, S. Selberherr: "VSP - A Gate Stack Analyzer"; Microelectronics Reliability, 47, (2007), 704 - 708 doi:10.1016/j.microrel.2007.01.059. BibTeX |
| 3. | P. Palestri, N. Barin, D. Brunel, C. Busseret, A. Campera, P. Childs, F. Driussi, C. Fiegna, G. Fiori, R. Gusmeroli, G. Iannaccone, M. Karner, H. Kosina, E. Langer, C. Majkusiak, C. Monzio Compagnoni, A. Poncet, E. Sangiorgi, L. Selmi, A. Spinelli, J. Walczak: "Comparison of Modeling Approaches for the Capacitance-Voltage and Current-Voltage Characteristics of Advanced Gate Stacks"; IEEE Transactions on Electron Devices, 54, (2007), 106 - 114 doi:10.1109/TED.2006.887226. BibTeX |
| 2. | M. Wagner, M. Karner, J. Cervenka, M. Vasicek, H. Kosina, S. Holzer, T. Grasser: "Quantum Correction for DG MOSFETs"; Journal of Computational Electronics, 5, (2007), 397 - 400 doi:10.1007/s10825-006-0032-7. BibTeX |
| 1. | M. Karner, A. Gehring, H. Kosina: "Efficient Calculation of Lifetime Based Direct Tunneling Through Stacked Dielectrics"; Journal of Computational Electronics, 5, (2006), 161 - 165 doi:10.1007/s10825-006-8837-y. BibTeX |
| 3. | M. Karner, A. Gehring, S. Holzer, H. Kosina: "Efficient Calculation of Quasi-bound States for the Simulation of Direct Tunneling"; in "Large-Scale Scientific Computing, Lecture Notes in Computer Science", 3743, I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer Berlin Heidelberg, 2006, ISBN: 3-540-31994-8, 572 - 577 doi:10.1007/11666806_65. BibTeX |
| 2. | M. Karner, A. Gehring, S. Holzer, H. Kosina, S. Selberherr: "Efficient Calculation of Lifetime Based Direct Tunneling Through Stacked Dielectrics"; in "Physics and Technology of High-k Gate Dielectrics III, Vol. 1 No. 5", issued by The Electrochemical Society; S. Kar, S. De Gendt, M. Houssa, D. Landheer, D. Misra, W. Tsai (ed); ECS Transactions, 2006, ISBN: 1-56677-444-6, 693 - 703 doi:10.1149/1.2209316. BibTeX |
| 1. | M. Karner, S. Holzer, W. Gös, M. Vasicek, M. Wagner, H. Kosina, S. Selberherr: "Numerical Analysis of Gate Stacks"; in "Physics and Technology of High-k Gate Dielectrics 4, Vol. 3 No. 3", issued by The Electrochemical Society; S. Kar, S. De Gendt, M. Houssa, H. Iwai, D. Landheer, D. Misra (ed); ECS Transactions, 2006, ISBN: 1-56677-503-5, 299 - 308 doi:10.1149/1.2355721. BibTeX |
| 42. | L. Filipovic, O. Baumgartner, J. Piso, J. Bobinac, T. Reiter, G. Strof, G. Rzepa, Z. Stanojevic, M. Karner: "DTCO Flow for Air Spacer Generation and its Impact on Power and Performance at N7"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022), Granada, Spain; 2022-09-06 - 2022-09-08; in "SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet", (2022), 34 - 35. BibTeX |
| 41. | H. Demel, Z. Stanojevic, M. Karner, G. Rzepa, T. Grasser: "Expanding TCAD Simulations from Grid to Cloud"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 2015-09-09 - 2015-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7860-4, 186 - 189 doi:10.1109/SISPAD.2015.7292290. BibTeX |
| 40. | O. Baumgartner, Z. Stanojevic, L. Filipovic, A. Grill, T. Grasser, H. Kosina, M. Karner: "Investigation of Quantum Transport in Nanoscaled GaN High Electron Mobility Transistors"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 2014-09-09 - 2014-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 117 - 120 doi:10.1109/SISPAD.2014.6931577. BibTeX |
| 39. | G. Rzepa, W. Gös, G.A. Rott, K. Rott, M. Karner, C. Kernstock, B. Kaczer, H. Reisinger, T. Grasser: "Physical Modeling of NBTI: From Individual Defects to Devices"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 2014-09-09 - 2014-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 81 - 84 doi:10.1109/SISPAD.2014.6931568. BibTeX |
| 38. | Z. Stanojevic, O. Baumgartner, M. Karner, L. Filipovic, C. Kernstock, H. Kosina: "On the Validity of Momentum Relaxation Time in Low-Dimensional Carrier Gases"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 2014-09-09 - 2014-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 181 - 184 doi:10.1109/SISPAD.2014.6931593. BibTeX |
| 37. | Z. Stanojevic, O. Baumgartner, M. Karner, L. Filipovic, C. Kernstock, H. Kosina: "Advanced Numerical Methods for Semi-Classical Transport Simulation in Ultra-Narrow Channels"; Talk: European Conference on Mathematics for Industry (ECMI), Taormina, Italy; (invited) 2014-06-09 - 2014-06-14; in "Abstracts of The 18th European Conference on Mathematics for Industry", (2014), 1. BibTeX |
| 36. | Z. Stanojevic, O. Baumgartner, M. Karner, L. Filipovic, C. Kernstock, H. Kosina: "Full-Band Modeling of Mobility in p-Type FinFETs"; Poster: Silicon Nanoelectronics Workshop, Honolulu, Hawaii, USA; 2014-06-08 - 2014-06-09; in "2014 IEEE Silicon Nanoelectronics Workshop", (2014), ISBN: 978-1-4799-5676-0, 83 - 84. BibTeX |
| 35. | Z. Stanojevic, L. Filipovic, O. Baumgartner, M. Karner, C. Kernstock, H. Kosina: "Full-Band Transport in Ultra-Narrow p-Type Si Channels: Field, Orientation, Strain"; Poster: International Conference on Ultimate Integration of Silicon (ULIS), Stockholm, Sweden; 2014-04-07 - 2014-04-09; in "Proc.Intl.Conf.on Ultimate Integration on Silicon (ULIS)", (2014), 4 page(s) . BibTeX |
| 34. | Z. Stanojevic, O. Baumgartner, K. Schnass, M. Karner, H. Kosina: "VSP - a Quantum Simulator for Engineering Applications"; Talk: International Workshop on Computational Electronics (IWCE), Nara, Japan; 2013-06-04 - 2013-06-07; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7, 132 - 133. BibTeX |
| 33. | M. Bina, O. Triebl, B. Schwarz, M. Karner, B. Kaczer, T. Grasser: "Simulation of Reliability on Nanoscale Devices"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 2012-09-05 - 2012-09-07; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2, 109 - 112. BibTeX |
| 32. | S. E. Tyaginov, I. Starkov, O. Triebl, M. Karner, C. Kernstock, C. Jungemann, H. Enichlmair, J.M. Park, T. Grasser: "Impact of Gate Oxide Thickness Variations on Hot-Carrier Degradation"; Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2012-07-02 - 2012-07-06; in "Proceedings of the 19th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2012), ISBN: 978-1-4673-0980-6, 1 - 5 doi:10.1109/IPFA.2012.6306265. BibTeX |
| 31. | S. E. Tyaginov, I. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser: "Interface Traps Density-of-States as a Vital Component for Hot-Carrier Degradation Modeling"; Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Montecassino Abbey and Gaeta; 2010-10-11 - 2010-10-15; in "Proceedings of the 21st European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2010), 3 page(s) . BibTeX |
| 30. | I. Starkov, S. E. Tyaginov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser: "Analysis of Worst-Case Hot-Carrier Conditions for High Voltage Transistors Based on Full-Band Monte-Carlo Simulations"; Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2010-07-05 - 2010-07-09; in "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9, 139 - 144. BibTeX |
| 29. | S. E. Tyaginov, I. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser: "Hot-Carrier Degradation Modeling Using Full-Band Monte-Carlo Simulations"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2010-07-05 - 2010-07-09; in "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9, 341 - 345. BibTeX |
| 28. | W. Gös, T. Grasser, M. Karner, B. Kaczer: "A Model for Switching Traps in Amorphous Oxides"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego, CA, USA; 2009-09-09 - 2009-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2009), ISBN: 978-1-4244-3947-8, 159 - 162 doi:10.1109/SISPAD.2009.5290226. BibTeX |
| 27. | O. Baumgartner, M. Karner, V. Sverdlov, H. Kosina: "Numerical Quadrature of the Subband Distribution Functions in Strained Silicon UTB Devices"; Talk: International Workshop on Computational Electronics (IWCE), Beijing, China; 2009-05-27 - 2009-05-29; in "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2009), ISBN: 978-1-4244-3926-3, 53 - 56 doi:10.1109/IWCE.2009.5091131. BibTeX |
| 26. | O. Baumgartner, M. Karner, V. Sverdlov, H. Kosina: "Numerical Study of the Electron Subband Structure in Strained Silicon UTB Devices"; Talk: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Göteborg; 2009-01-19 - 2009-01-21; in "EUROSOI 2009 Conference Proceedings", (2009), 57 - 58. BibTeX |
| 25. | O. Baumgartner, M. Karner, H. Kosina: "Modeling of High-k-Metal-Gate-Stacks Using the Non-Equilibrium Green´s Function Formalism"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 2008-09-09 - 2008-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7, 353 - 356 doi:10.1109/SISPAD.2008.4648310. BibTeX |
| 24. | O. Baumgartner, P. Schwaha, M. Karner, M. Nedjalkov, S. Selberherr: "Coupling of Non-Equilibrium Green's Function and Wigner Function Approaches"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 2008-09-09 - 2008-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7, 345 - 348 doi:10.1109/SISPAD.2008.4648308. BibTeX |
| 23. | W. Gös, M. Karner, S. E. Tyaginov, Ph. Hehenberger, T. Grasser: "Level Shifts and Gate Interfaces as Vital Ingredients in Modeling of Charge Trapping"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 2008-09-09 - 2008-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7, 69 - 72 doi:10.1109/SISPAD.2008.4648239. BibTeX |
| 22. | M. Vasicek, J. Cervenka, M. Karner, T. Grasser: "Consistent Higher-Order Transport Models for SOI MOSFETs"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 2008-09-09 - 2008-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7, 129 - 132 doi:10.1109/SISPAD.2008.4648254. BibTeX |
| 21. | W. Gös, M. Karner, V. Sverdlov, T. Grasser: "A Rigorous Model for Trapping and Detrapping in Thin Gate Dielectrics"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2008-07-07 - 2008-07-11; in "Proceedings 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2008), ISBN: 978-1-4244-2039-1, 249 - 254. BibTeX |
| 20. | M. Karner, O. Baumgartner, M. Pourfath, M. Vasicek, H. Kosina: "Investigation of a MOSCAP Using NEGF"; Talk: International Semiconductor Device Research Symposium (ISDRS), Maryland; 2007-12-12 - 2007-12-14; in "2007 International Semiconductor Device Research Symposium", (2007), ISBN: 978-1-4244-1892-3, 2 page(s) . BibTeX |
| 19. | M. Vasicek, J. Cervenka, M. Wagner, M. Karner, T. Grasser: "A 2D-Non-Parabolic Six Moments Model"; Talk: International Semiconductor Device Research Symposium (ISDRS), Maryland; 2007-12-12 - 2007-12-14; in "2007 International Semiconductor Device Research Symposium", (2007), ISBN: 978-1-4244-1892-3, 2 page(s) . BibTeX |
| 18. | M. Vasicek, J. Cervenka, M. Karner, M. Wagner, T. Grasser: "Parameter Modeling for Higher-Order Transport Models in UTB SOI MOSFETs"; Poster: International Workshop on Computational Electronics (IWCE), Amherst, MA, USA; 2007-10-08 - 2007-10-10; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2007), 96 - 97. BibTeX |
| 17. | M. Vasicek, M. Karner, E. Ungersböck, M. Wagner, H. Kosina, T. Grasser: "Modeling of Macroscopic Transport Parameters in Inversion Layers"; Talk: T. Grasser, S. Selberherr (ed); International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 2007-09-25 - 2007-09-27; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2007), 12, ISBN: 978-3-211-72860-4, 201 - 204 doi:10.1007/978-3-211-72861-1_48. BibTeX |
| 16. | O. Baumgartner, M. Karner, S. Holzer, M. Pourfath, T. Grasser, H. Kosina: "Adaptive Energy Integration of Non-Equilibrium Green´s Functions"; Poster: The Nanotechnology Conference and Trade Show, Santa Clara; 2007-05-19 - 2007-05-24; in "NSTI Nanotech Proceedings", (2007), 3, ISBN: 1-4200-6184-4, 145 - 148. BibTeX |
| 15. | M. Karner, S. Holzer, M. Vasicek, W. Gös, M. Wagner, H. Kosina, S. Selberherr: "Numerical Analysis of Gate Stacks"; Talk: Meeting of the Electrochemical Society, High Dielectric Constant Gate Stacks, Cancun; 2006-10-29 - 2006-11-03; in "210th ECS Meeting", (2006), ISSN: 1091-8213, 1 page(s) . BibTeX |
| 14. | S. Holzer, M. Wagner, A. Sheikholeslami, M. Karner, G. Span, T. Grasser, S. Selberherr: "An Extendable Multi-Purpose Simulation and Optimization Framework for Thermal Problems in TCAD Applications"; Talk: Workshop on Thermal Investigations of ICs and Systems (THERMINIC), Nice; 2006-09-27 - 2006-09-29; in "Collection of Papers Presented at the 12th International Workshop on Thermal Investigation of ICs and Systems", (2006), ISBN: 2-9161-8704-9, 239 - 244. BibTeX |
| 13. | M. Karner, E. Ungersböck, A. Gehring, S. Holzer, H. Kosina, S. Selberherr: "Strain Effects on Quasi-Bound State Tunneling in Advanced SOI CMOS Technologies"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 2006-09-06 - 2006-09-08; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5, 314 - 317 doi:10.1109/SISPAD.2006.282898. BibTeX |
| 12. | S. Holzer, Ch. Hollauer, H. Ceric, M. Karner, T. Grasser, E. Langer, S. Selberherr: "Three-Dimensional Transient Interconnect Analysis With Regard to Mechanical Stress"; Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2006-07-03 - 2006-07-07; in "Proceedings 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2006), ISBN: 1-4244-0206-9, 154 - 157. BibTeX |
| 11. | S. Holzer, A. Sheikholeslami, M. Karner, T. Grasser: "Comparison of Deposition Models for TEOS CVD Process"; Talk: Workshop on Dielectrics in Microelectronics (WODIM), Catania; 2006-06-26 - 2006-06-28; in "WODIM 2006 14th Workshop on Dielectrics in Microelectronics Workshop Programme and Abstracts", (2006), 158 - 159. BibTeX |
| 10. | M. Karner, A. Gehring, M. Wagner, R. Entner, S. Holzer, W. Gös, M. Vasicek, T. Grasser, H. Kosina, S. Selberherr: "VSP-A Gate Stack Analyzer"; Talk: Workshop on Dielectrics in Microelectronics (WODIM), Catania; 2006-06-26 - 2006-06-28; in "WODIM 2006 14th Workshop on Dielectrics in Microelectronics Workshop Program and Abstracts", (2006), 101 - 102. BibTeX |
| 9. | M. Karner, A. Gehring, S. Holzer, M. Wagner, H. Kosina: "Continuum Versus Quasi-Bound State Tunneling in Novel Device Architectures"; Poster: Silicon Nanoelectronics Workshop, Honolulu; 2006-06-11 - 2006-06-12; in "Abstracts IEEE 2006 Silicon Nanoelectronics Workshop", (2006), 161 - 162. BibTeX |
| 8. | M. Karner, A. Gehring, S. Holzer, M. Pourfath, M. Wagner, H. Kosina, T. Grasser, S. Selberherr: "VSP - A Multi-Purpose Schrödinger-Poisson Solver for TCAD Applications"; Poster: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 2006-05-25 - 2006-05-27; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1, 255 - 256. BibTeX |
| 7. | M. Wagner, T. Grasser, M. Karner, H. Kosina: "Quantum Correction for DG MOSFETs"; Poster: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 2006-05-25 - 2006-05-27; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1, 87 - 88. BibTeX |
| 6. | M. Karner, M. Wagner, T. Grasser, H. Kosina: "A Physically Based Quantum Correction Model for DG MOSFETs"; Talk: Materials Research Society Spring Meeting (MRS), San Francisco; 2006-04-17 - 2006-04-21; in "San Francisco 2006 MRS Meeting Abstracts", (2006), 104 - 105. BibTeX |
| 5. | M. Wagner, M. Karner, T. Grasser: "Quantum Correction Models for Modern Semiconductor Devices"; Poster: International Workshop on the Physics of Semiconductor Devices (IWPSD), New Dehli; 2005-12-13 - 2005-12-17; in "Proceedings of the XIII International Workshop on Semiconductor Devices", (2005), Vol. 1, 458 - 461. BibTeX |
| 4. | M. Karner, A. Gehring, S. Holzer, H. Kosina, S. Selberherr: "Efficient Calculation of Quasi-Bound State Tunneling through Stacked Dielectrics"; Talk: Meeting of the Electrochemical Society (ECS), Los Angeles; 2005-10-16 - 2005-10-21; in "208th ECS Meeting", (2005), 1119, ISSN: 1091-8213, 1 page(s) . BibTeX |
| 3. | M. Karner, A. Gehring, H. Kosina, S. Selberherr: "Efficient Calculation of Quasi-Bound State Tunneling in CMOS Devices"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 2005-09-01 - 2005-09-03; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5, 35 - 38 doi:10.1109/SISPAD.2005.201466. BibTeX |
| 2. | M. Karner, A. Gehring, H. Kosina: "Efficient Calculation of Life Time Based Direct Tunneling through Stacked Dielectrics"; Talk: Modelling and Simulation of Electron Devices (MSED), Pisa; 2005-07-04 - 2005-07-05; in "15th Workshop on Modelling and Simulation of Electron Devices", (2005), 97 - 98. BibTeX |
| 1. | M. Karner, A. Gehring, S. Holzer, H. Kosina: "On the Efficient Calculation of Quasi-Bound States for the Simulation of Direct Tunneling"; Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 2005-06-06 - 2005-06-10; in "Proceedings of the International Conference on Large-Scale Scientific Computations (LSSC)", (2005), 33 - 34. BibTeX |
| 5. | H. Demel: "Autonom skalierendes, verteiltes Simulationsframework für TCAD-Anwendungen"; Supervisor: K. Göschka, O. Baumgartner, M. Karner, C. Kernstock, Z. Stanojevic; Institute of Information Systems, Distributed Systems Group, 2016, final examination: 2016-10-03. BibTeX |
| 4. | C. Kernstock: "Design and Implementation of TCAD Environment Tools"; Supervisor: H. Kosina, M. Karner; Institut für Mikroelektronik, 2008, final examination: 2008-11-28. BibTeX |
| 3. | P. Prause: "Design and Integration of Distributed Computing Concepts in a TCAD Framework"; Supervisor: E. Langer, M. Karner; Institut für Mikroelektronik, 2008, final examination: 2008-10-09. BibTeX |
| 2. | O. Baumgartner: "Simulation of Quantum Transport Using the Non-Equilibrium Green´s Functions Formalism"; Supervisor: T. Grasser, M. Karner; Institut für Mikroelektronik, 2007, final examination: 2007-01-18. BibTeX |
| 1. | M. Karner: "Multi-Dimensional Simulation of Closed Quantum Systems"; Supervisor: T. Grasser, A. Gehring; Institut für Mikroelektronik, 2004, . BibTeX |
| 3. | T. Grasser, M. Karner, C. Kernstock, H. Kosina, O. Triebl: "Customized Software Development Report"; (2010), 22 page(s) . BibTeX |
| 2. | M. Karner, O. Baumgartner, H. Kosina: "Threshold Voltage Modeling in Strained Si using VSP"; (2007), 26 page(s) . BibTeX |
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