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Publications Martin Knaipp

19 records

Publications in Scientific Journals

4.  E. Brinciotti, G. Badino, M. Knaipp, G. Gramse, J. Smoliner, F. Kienberger:
"Calibrated Nanoscale Dopant Profiling and Capacitance of a High-Voltage Lateral MOS Transistor at 20 GHz Using Scanning Microwave Microscopy";
IEEE Transactions on Nanotechnology, 16 (2017), 2; 245 - 252. https://doi.org/10.1109/TNANO.2017.2657888

3.  J. Cervenka, R. Klima, M. Knaipp, S. Selberherr:
"Three-Dimensional Device Optimization by Green's Functions";
European Physical Journal - Applied Physics, 21 (2003), 103 - 106. https://doi.org/10.1051/epjap:2002121

2.  M. Knaipp, W. Kanert, S. Selberherr:
"Hydrodynamic Modeling of Avalanche Breakdown in a Gate Overvoltage Protection Structure";
Solid-State Electronics, 44 (2000), 7; 1135 - 1143. https://doi.org/10.1016/S0038-1101(00)00046-0

1.  K. Dragosits, M. Knaipp, S. Selberherr:
"Two-Dimensional Simulation of Ferroelectric Memory Cells";
Journal of the Korean Physical Society, 35 (1999), 92; 104 - 106. https://doi.org/10.3938/jkps.35.S104

Talks and Poster Presentations (with Proceedings-Entry)

11.  J. Cervenka, M. Knaipp, A. Hössinger, S. Selberherr:
"Green's Function Approach for Three-Dimensional Diffusion Simulation of Industrial High Voltage Applications";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; 408 - 411. https://doi.org/10.1007/978-3-7091-6244-6_94

10.  J. Cervenka, P. Fleischmann, S. Selberherr, M. Knaipp, F. Unterleitner:
"Optimization of Industrial High Voltage Structures by Three-Dimensional Diffusion Simulation";
Talk: European Solid-State Device Research Conference (ESSDERC), Nürnberg; 2001-09-11 - 2001-09-13; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2001), ISBN: 2-914601-01-8; 227 - 230.

9.  V. Palankovski, T. Grasser, M. Knaipp, S. Selberherr:
"Simulation of Polysilicon Emitter Bipolar Transistors";
Poster: European Solid-State Device Research Conference (ESSDERC), Cork; 2000-09-11 - 2000-09-13; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2000), ISBN: 2-86332-248-6; 608 - 611. https://doi.org/10.1109/ESSDERC.2000.194851

8.  T. Grasser, R. Strasser, M. Knaipp, K. Tsuneno, H. Masuda, S. Selberherr:
"Calibration of a Mobility Model for Quartermicron CMOS Devices";
Poster: European Simulation Multiconference (ESM), Manchester; 1998-06-16 - 1998-06-19; in: "Proceedings European Simulation Multiconference", (1998), ISBN: 1-56555-148-6; 75 - 77.

7.  T. Grasser, R. Strasser, M. Knaipp, K. Tsuneno, H. Masuda, S. Selberherr:
"Device Simulator Calibration for Quartermicron CMOS Devices";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4; 93 - 96. https://doi.org/10.1007/978-3-7091-6827-1_26

6.  V. Palankovski, M. Knaipp, S. Selberherr:
"Influence of the Material Composition and Doping Profiles on HBTs Device Performance";
Talk: International Conference on Modelling and Simulation, Pittsburgh; 1998-05-13 - 1998-05-16; in: "Proceedings IASTED Intl. Conf. on Modelling and Simulation", (1998), ISBN: 0-88986-252-4; 7 - 10.

5.  K. Dragosits, M. Knaipp, S. Selberherr:
"Two-Dimensional Simulation of Ferroelectric Memory Cells";
Talk: International Conference on Electronic Materials, Cheju; 1998-08-24 - 1998-08-27; in: "Abstracts Intl. Conf. on Electronic Materials", (1998), 40.

4.  K. Dragosits, M. Knaipp, S. Selberherr:
"Two-Dimensional Simulation of Ferroelectric Nonvolatile Memory Cells";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4; 368 - 371. https://doi.org/10.1007/978-3-7091-6827-1_91

3.  M. Knaipp, T. Grasser, S. Selberherr:
"A Physically Based Substrate Current Simulation";
Poster: European Solid-State Device Research Conference (ESSDERC), Stuttgart; 1997-09-22 - 1997-09-24; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1997), ISBN: 2-86332-221-4; 196 - 199.

2.  M. Knaipp, S. Selberherr:
"Investigation on Hydrodynamic Impact Ionization (II) in n-MOSFETs";
Talk: International Conference on Computational Physics, Singapore; 1997-06-02 - 1997-06-04; in: "Abstracts Intl. Conf. on Computational Physics", (1997), 37 - 38.

1.  M. Knaipp, T. Simlinger, W. Kanert, S. Selberherr:
"Analysis of Leakage Currents in Smart Power Devices";
Talk: European Solid-State Device Research Conference (ESSDERC), Bologna; 1996-09-09 - 1996-09-11; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1996), ISBN: 2-86332-196-x; 645 - 648.

Doctor's Theses (authored and supervised)

1.  M. Knaipp:
"Modellierung von Temperatureinflüssen in Halbleiterbauelementen";
Supervisor, Reviewer: S. Selberherr, E. Gornik; Institut für Mikroelektronik, 1998; oral examination: 1998-10-21.

Scientific Reports

3.  T. Grasser, A. Hössinger, H. Kirchauer, M. Knaipp, R. Martins, R. Plasun, M. Rottinger, G. Schrom, S. Selberherr:
"VISTA Status Report December 1997";
1997; 36 pages.

2.  M. Knaipp, H. Kosina, R. Mlekus, M. Radi, M. Rottinger, S. Selberherr:
"VISTA Status Report June 1997";
1997; 31 pages.

1.  M. Knaipp, C. Pichler, G. Rieger, M. Rottinger, R. Sabelka, S. Selberherr, R. Strasser:
"VISTA Status Report December 1995";
1995; 21 pages.