Publications Martin Knaipp
20 records
4. | E. Brinciotti, G. Badino, M. Knaipp, G. Gramse, J. Smoliner, F. Kienberger: "Calibrated Nanoscale Dopant Profiling and Capacitance of a High-Voltage Lateral MOS Transistor at 20 GHz Using Scanning Microwave Microscopy"; IEEE Transactions on Nanotechnology, 16, (2017), 245 - 252 doi:10.1109/TNANO.2017.2657888. BibTeX |
3. | J. Cervenka, R. Klima, M. Knaipp, S. Selberherr: "Three-Dimensional Device Optimization by Green's Functions"; European Physical Journal - Applied Physics, 21, (2003), 103 - 106 doi:10.1051/epjap:2002121. BibTeX |
2. | M. Knaipp, W. Kanert, S. Selberherr: "Hydrodynamic Modeling of Avalanche Breakdown in a Gate Overvoltage Protection Structure"; Solid-State Electronics, 44, (2000), 1135 - 1143 doi:10.1016/S0038-1101(00)00046-0. BibTeX |
1. | K. Dragosits, M. Knaipp, S. Selberherr: "Two-Dimensional Simulation of Ferroelectric Memory Cells"; Journal of the Korean Physical Society, 35, (1999), 104 - 106 doi:10.3938/jkps.35.S104. BibTeX |
12. | J. Cervenka, P. Fleischmann, S. Selberherr, M. Knaipp, F. Unterleitner: "Optimization of Industrial High Voltage Structures by Three-Dimensional Diffusion Simulation"; Talk: European Solid-State Device Research Conference (ESSDERC), Nürnberg; 2001-09-11 - 2001-09-13; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2001), ISBN: 2-914601-01-8, 227 - 230. BibTeX |
11. | J. Cervenka, M. Knaipp, A. Hössinger, S. Selberherr: "Green's Function Approach for Three-Dimensional Diffusion Simulation of Industrial High Voltage Applications"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 2001-09-05 - 2001-09-07; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6, 408 - 411 doi:10.1007/978-3-7091-6244-6_94. BibTeX |
10. | V. Palankovski, T. Grasser, M. Knaipp, S. Selberherr: "Simulation of Polysilicon Emitter Bipolar Transistors"; Poster: European Solid-State Device Research Conference (ESSDERC), Cork; 2000-09-11 - 2000-09-13; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2000), ISBN: 2-86332-248-6, 608 - 611 doi:10.1109/ESSDERC.2000.194851. BibTeX |
9. | K. Dragosits, M. Knaipp, S. Selberherr: "Two-Dimensional Simulation of Ferroelectric Nonvolatile Memory Cells"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 1998-09-02 - 1998-09-04; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4, 368 - 371 doi:10.1007/978-3-7091-6827-1_91. BibTeX |
8. | T. Grasser, R. Strasser, M. Knaipp, K. Tsuneno, H. Masuda, S. Selberherr: "Device Simulator Calibration for Quartermicron CMOS Devices"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 1998-09-02 - 1998-09-04; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4, 93 - 96 doi:10.1007/978-3-7091-6827-1_26. BibTeX |
7. | K. Dragosits, M. Knaipp, S. Selberherr: "Two-Dimensional Simulation of Ferroelectric Memory Cells"; Talk: International Conference on Electronic Materials, Cheju; 1998-08-24 - 1998-08-27; in "Abstracts Intl. Conf. on Electronic Materials", (1998), 40. BibTeX |
6. | T. Grasser, R. Strasser, M. Knaipp, K. Tsuneno, H. Masuda, S. Selberherr: "Calibration of a Mobility Model for Quartermicron CMOS Devices"; Poster: European Simulation Multiconference (ESM), Manchester; 1998-06-16 - 1998-06-19; in "Proceedings European Simulation Multiconference", (1998), ISBN: 1-56555-148-6, 75 - 77. BibTeX |
5. | V. Palankovski, M. Knaipp, S. Selberherr: "Influence of the Material Composition and Doping Profiles on HBTs Device Performance"; Talk: International Conference on Modelling and Simulation, Pittsburgh; 1998-05-13 - 1998-05-16; in "Proceedings IASTED Intl. Conf. on Modelling and Simulation", (1998), ISBN: 0-88986-252-4, 7 - 10. BibTeX |
4. | M. Knaipp, S. Selberherr: "A Physically Based Substrate Current Simulation"; Talk: International Conference on VLSI and CAD (ICVC), Seoul; 1997-10-13 - 1997-10-15; in "Proceedings Intl. Conf. On VLSI and CAD", (1997), 558 - 560. BibTeX |
3. | M. Knaipp, T. Grasser, S. Selberherr: "A Physically Based Substrate Current Simulation"; Poster: European Solid-State Device Research Conference (ESSDERC), Stuttgart; 1997-09-22 - 1997-09-24; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1997), ISBN: 2-86332-221-4, 196 - 199. BibTeX |
2. | M. Knaipp, S. Selberherr: "Investigation on Hydrodynamic Impact Ionization (II) in n-MOSFETs"; Talk: International Conference on Computational Physics, Singapore; 1997-06-02 - 1997-06-04; in "Abstracts Intl. Conf. on Computational Physics", (1997), 37 - 38. BibTeX |
1. | M. Knaipp, T. Simlinger, W. Kanert, S. Selberherr: "Analysis of Leakage Currents in Smart Power Devices"; Talk: European Solid-State Device Research Conference (ESSDERC), Bologna; 1996-09-09 - 1996-09-11; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1996), ISBN: 2-86332-196-x, 645 - 648. BibTeX |
1. | M. Knaipp: "Modellierung von Temperatureinflüssen in Halbleiterbauelementen"; Reviewer: S. Selberherr, E. Gornik; Institut für Mikroelektronik, 1998, oral examination: 1998-10-21. BibTeX |
3. | T. Grasser, A. Hössinger, H. Kirchauer, M. Knaipp, R. Martins, R. Plasun, M. Rottinger, G. Schrom, S. Selberherr: "VISTA Status Report December 1997"; (1997), 36 page(s) . BibTeX |
2. | M. Knaipp, H. Kosina, R. Mlekus, M. Radi, M. Rottinger, S. Selberherr: "VISTA Status Report June 1997"; (1997), 31 page(s) . BibTeX |
1. | M. Knaipp, C. Pichler, G. Rieger, M. Rottinger, R. Sabelka, S. Selberherr, R. Strasser: "VISTA Status Report December 1995"; (1995), 21 page(s) . BibTeX |