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Publications Theresia Knobloch

53 records


Publications in Scientific Journals

24. F. Ducry, D. Waldhör, T. Knobloch, M. Csontos, J. Olalla, J. Leuthold, T. Grasser, M. Luisier:
"An Ab Initio Study on Resistance Switching in Hexagonal Boron Nitride";
npj 2D Materials and Applications, 6, (2022), doi:10.1038/s41699-022-00340-6. BibTeX
23. Y. Illarionov, T. Knobloch, T. Grasser:
"Inorganic Molecular Crystals for 2D Electronics";
Nature Electronics, 4, (2022), 870 - 871 doi:10.1038/s41928-021-00691-w. BibTeX
22. T. Knobloch, U. Burkay, Yu. Illarionov, Z. Wang, M. Otto, L. Filipovic, M. Waltl, D. Neumaier, M. Lemme, T. Grasser:
"Improving Stability in Two-Dimensional Transistors with Amorphous Gate Oxides by Fermi-Level Tuning";
Nature Electronics, 5, (2022), 356 - 366 doi:10.1038/s41928-022-00768-0. BibTeX
21. T. Knobloch, S. Selberherr, T. Grasser:
"Challenges for Nanoscale CMOS Logic Based on Two-Dimensional Materials";
Nanomaterials, 12, (invited) (2022), doi:10.3390/nano12203548. BibTeX
20. M. Waltl, T. Knobloch, K. Tselios, L. Filipovic, B. Stampfer, Y. Hernandez, D. Waldhör, Y. Illarionov, B. Kaczer, T. Grasser:
"Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology?";
Advanced Materials, n/a, (invited) (2022), 2201082-1 - 2201082-23 doi:10.1002/adma.202201082. BibTeX
19. S. Das, A. Sebastian, E. Pop, C. McClellan, A. Franklin, T. Grasser, T. Knobloch, Yu. Illarionov, A. Penumatcha, J. Appenzeller, Z. Chen, W. Zhu, L. Li, U. Avci, N. Bhat, T. Anthopoulos, R. Singh:
"Transistors Based on Two-Dimensional Materials for Future Integrated Circuits";
Nature Electronics, 4, (2021), 786 - 799 doi:10.1038/s41928-021-00670-1. BibTeX
18. Yu. Illarionov, T. Knobloch, T. Grasser:
"Crystalline Insulators for Scalable 2D Nanoelectronics";
Solid-State Electronics, 185, (2021), 108043-1 - 108043-3 doi:10.1016/j.sse.2021.108043. BibTeX
17. T. Knobloch, Yu. Illarionov, F. Ducry, C. Schleich, S. Wachter, K. Watanabe, T. Taniguchi, T. Müller, M. Waltl, M. Lanza, M. I. Vexler, M. Luisier, T. Grasser:
"The Performance Limits of Hexagonal Boron Nitride as an Insulator for Scaled CMOS Devices Based on Two-Dimensional Materials";
Nature Electronics, 4, (2021), 98 - 108 doi:10.1038/s41928-020-00529-x. BibTeX
16. Yu. Illarionov, T. Knobloch, T. Grasser:
"Native High-k Oxides for 2D Transistors";
Nature Electronics, 3, (2020), 442 - 443 doi:10.1038/s41928-020-0464-2. BibTeX
15. Yu. Illarionov, T. Knobloch, M. Jech, M. Lanza, D. Akinwande, M. I. Vexler, T. Müller, M. Lemme, G. Fiori, F. Schwierz, T. Grasser:
"Insulators for 2D Nanoelectronics: The Gap to Bridge";
Nature Communications, 11, (2020), 3385 doi:10.1038/s41467-020-16640-8. BibTeX
14. C. Wen, A. Banshchikov, Yu. Illarionov, W. Frammelsberger, T. Knobloch, F. Hui, N. S. Sokolov, T. Grasser, M. Lanza:
"Dielectric Properties of Ultrathin CaF2 Ionic Crystals";
Advanced Materials, 32, (2020), 2002525-1 - 2002525-6 doi:10.1002/adma.202002525. BibTeX
13. Yu. Illarionov, A. Banshchikov, D.K Polyushkin, S. Wachter, T. Knobloch, M. Thesberg, L. Mennel, M. Paur, M. Stöger-Pollach, A. Steiger-Thirsfeld, M. I. Vexler, M. Waltl, N. S. Sokolov, T. Müller, T. Grasser:
"Ultrathin Calcium Fluoride Insulators for Two-Dimensional Field-Effect Transistors";
Nature Electronics, 2, (2019), 230 - 235 doi:10.1038/s41928-019-0256-8. BibTeX
12. Yu. Illarionov, A. Banshchikov, D.K Polyushkin, S. Wachter, T. Knobloch, M. Thesberg, M. I. Vexler, M. Waltl, M. Lanza, N. S. Sokolov, A. Müller, T. Grasser:
"Reliability of Scalable MoS2 FETs With 2 nm Crystalline CaF2 Insulators";
2D Materials, 6, (2019), 045004 doi:10.1088/2053-1583/ab28f2. BibTeX
11. N. Oliva, Yu. Illarionov, E. Casu, M. Cavalieri, T. Knobloch, T. Grasser, A. Ionescu:
"Hysteresis Dynamics in Double-Gated n-Type WSe2 FETs With High-k Top Gate Dielectric";
IEEE Journal of the Electron Devices Society, 7, (2019), 1163 - 1169 doi:10.1109/JEDS.2019.2933745. BibTeX
10. M. Gillinger, K. Shaposhnikov, T. Knobloch, M. Stöger-Pollach, W. Artner, K. Hradil, M. Schneider, M. Kaltenbacher, U. Schmid:
"Enhanced c-axis orientation of aluminum nitride thin films by plasma-based pre-conditioning of sapphire substrates for SAW applications";
Applied Surface Science, 435, (2018), 432 - 437 doi:10.1016/j.apsusc.2017.11.113. BibTeX
9. T. Knobloch, G. Rzepa, Yu. Illarionov, M. Waltl, F. Schanovski, B. Stampfer, M. M. Furchi, T. Müller, T. Grasser:
"A Physical Model for the Hysteresis in MoS2 Transistors";
IEEE Journal of the Electron Devices Society, 6, (2018), 972 - 978 doi:10.1109/JEDS.2018.2829933. BibTeX
8. G. Rzepa, J. Franco, B.J. O´Sullivan, A. Subirats, M. Simicic, G. Hellings, P. Weckx, M. Jech, T. Knobloch, M. Waltl, P. Roussel, D. Linten, B. Kaczer, T. Grasser:
"Comphy -- A Compact-Physics Framework for Unified Modeling of BTI";
Microelectronics Reliability, 85, (invited) (2018), 49 - 65 doi:10.1016/j.microrel.2018.04.002. BibTeX
7. B. Stampfer, F. Zhang, Yu. Illarionov, T. Knobloch, P. Wu, M. Waltl, A. Grill, J. Appenzeller, T. Grasser:
"Characterization of Single Defects in Ultrascaled MoS2 Field-Effect Transistors";
ACS Nano, 12, (2018), 5368 - 5375 doi:10.1021/acsnano.8b00268. BibTeX
6. Yu. Illarionov, T. Knobloch, M. Waltl, G. Rzepa, A. Pospischil, D.K Polyushkin, M. M. Furchi, T. Müller, T. Grasser:
"Energetic Mapping of Oxide Traps in MoS2 Field-Effect Transistors";
2D Materials, 4, (2017), 025108-1 - 025108-10 doi:10.1088/2053-1583/aa734a. BibTeX
5. Yu. Illarionov, K. Smithe, M. Waltl, T. Knobloch, E. Pop, T. Grasser:
"Improved Hysteresis and Reliability of MoS2 Transistors With High-Quality CVD Growth and Al2O3 Encapsulation";
IEEE Electron Device Letters, 38, (2017), 1763 - 1766 doi:10.1109/LED.2017.2768602. BibTeX
4. Yu. Illarionov, M. Waltl, G. Rzepa, T. Knobloch, J. Kim, D. Akinwande, T. Grasser:
"Highly-Stable Black Phosphorus Field-Effect Transistors with Low Density of Oxide Traps";
npj 2D Materials and Applications, 1, (2017), 23-1 - 23-7 doi:10.1038/s41699-017-0025-3. BibTeX
3. X. Song, F. Hui, T. Knobloch, B. Wang, Z. Fan, T. Grasser, X. Jing, Y. Shi, M. Lanza:
"Piezoelectricity in Two Dimensions: Graphene vs. Molybdenum Disulfide";
Applied Physics Letters, 111, (2017), 083107-1 - 083107-4 doi:10.1063/1.5000496. BibTeX
2. M. Gillinger, K. Shaposhnikov, T. Knobloch, M. Schneider, M. Kaltenbacher, U. Schmid:
"Impact of layer and substrate properties on the surface acoustic wave velocity in scandium doped aluminum nitride based SAW devices on sapphire";
Applied Physics Letters, 108, (2016), 231601-1 - 231601-4 doi:10.1063/1.4953259. BibTeX
1. Yu. Illarionov, G. Rzepa, M. Waltl, T. Knobloch, A. Grill, M. M. Furchi, T. Müller, T. Grasser:
"The Role of Charge Trapping in MoS2/SiO2 and MoS2/hBN Field-Effect Transistors";
2D Materials, 3, (2016), 035004-1 - 035004-10 doi:10.1088/2053-1583/3/3/035004. BibTeX

Contributions to Books

1. T. Knobloch, G. Rzepa, Yu. Illarionov, M. Waltl, D.K Polyushkin, A. Pospischil, M. M. Furchi, T. Müller, T. Grasser:
"Impact of Gate Dielectrics on the Threshold Voltage in MoS2 Transistors";
in "Semiconductors, Dielectrics, and Metals for Nanoelectronics 15, Vol.80, No.1", issued by The Electrochemical Society; D. Misra, S. De Gendt, M. Houssa, K. Kita, D. Landheer (ed); ECS Transactions, (invited) 2017, ISBN: 978-1-62332-470-4, 203 - 217 doi:10.1149/08001.0203ecst. BibTeX

Talks and Poster Presentations (with Proceedings-Entry)

17. T. Knobloch, Yu. Illarionov, T. Grasser:
"Enhancing the Stability of 2D Material-Based Transistors via Fermi-Level Tuning";
Talk: Graphene Week 2022, Munich, Germany; (invited) 2022-09-05 - 2022-09-09; in "Abstracts of Graphene Week 2022", (2022), . BibTeX
16. Yu. Illarionov, B. Uzlu, T. Knobloch, A. Banshchikov, V. Sverdlov, M. Vexler, N. S. Sokolov, M. Waltl, Z. Wang, D. Neumaier, M. Lemme, T. Grasser:
"CVD-GFETs with Record-small Hysteresis Owing to 2nm Epitaxial CaF2 Insulators";
Talk: Device Research Conference (DRC), Columbus, OH; 2022-06-26 - 2022-06-29; in "Proceedings of the Device Research Conference (DRC)", (2022), ISBN: 978-1-6654-9883-8, 121 - 122. BibTeX
15. T. Knobloch, Yu. Illarionov, T. Grasser:
"Finding Suitable Gate Insulators for Reliable 2D FETs";
Talk: International Reliability Physics Symposium (IRPS), Dallas, USA; (invited) 2022-03-27 - 2022-03-31; in "2022 IEEE International Reliability Physics Symposium (IRPS) : proceedings : March 27-31, 2022, Dallas, Texas / IEEE", (2022), ISBN: 978-1-6654-7950-9, 2A.1-1 - 2A.1-10 doi:10.1109/IRPS48227.2022.9764499. BibTeX
14. J. Michl, A. Grill, D. Waldhör, C. Schleich, T. Knobloch, E. Ioannidis, H. Enichlmair, R. Minixhofer, B. Kaczer, B. Parvais, B. Govoreanu, I. Radu, T. Grasser, M. Waltl:
"Evidence of Tunneling Driven Random Telegraph Noise in Cryo-CMOS";
Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, USA; 2021-12-11 - 2021-12-15; in "2021 IEEE International Electron Devices Meeting (IEDM)", (2021), 31.3.1 - 31.3.3 doi:10.1109/IEDM19574.2021.9720501. BibTeX
13. C. Wen, Yu. Illarionov, W. Frammelsberger, T. Knobloch, T. Grasser, M. Lanza:
"Outstanding Dielectric Properties of Ultra-thin CaF2 Dielectric Films";
Talk: APS March Meeting, College Park, MD, USA; 2021-03-15 - 2021-03-19; in "Bulletin of the American Physical Society", (2021), . BibTeX
12. Yu. Illarionov, T. Knobloch, M. Waltl, S. Majumdar, M. Soikkeli, W. Kim, S. Wachter, D.K Polyushkin, S. Arpiainen, M. Prunnila, A. Mueller, T. Grasser:
"Low Variability and 1010 On/Off Current Ratio in Flexible MoS2 FETs with Al2O3 Encapsulation Improved by Parylene N";
Talk: Electronic Materials Conference (EMC), Columbus, OH, USA - virtual; 2020-06-24 - 2020-06-26; in "Proceedings of the Electronic Materials Conference (EMC)", (2020), 25. BibTeX
11. T. Knobloch, Yu. Illarionov, B. Uzlu, M. Waltl, D. Neumaier, M. Lemme, T. Grasser:
"The Impact of the Graphene Work Function on the Stability of Flexible GFETs";
Talk: Electronic Materials Conference (EMC), Columbus, OH, USA - virtual; 2020-06-24 - 2020-06-26; in "Proceedings of the Electronic Materials Conference (EMC)", (2020), . BibTeX
10. Yu. Illarionov, A. Banshchikov, T. Knobloch, D.K Polyushkin, S. Wachter, V. V. Fedorov, S. M. Suturin, M. Stöger-Pollach, M. I. Vexler, N. S. Sokolov, T. Grasser:
"Crystalline Calcium Fluoride: A Record-Thin Insulator for Nanoscale 2D Electronics";
Talk: Device Research Conference (DRC), Columbus, OH, USA - virtual; 2020-06-21 - 2020-06-24; in "Proceedings of the Device Research Conference (DRC)", (2020), 1 - 2 doi:10.1109/DRC50226.2020.9135160. BibTeX
9. Yu. Illarionov, T. Knobloch, K. Smithe, M. Waltl, R. Grady, D. Waldhör, E. Pop, T. Grasser:
"Anomalous Instabilities in CVD-MoS2 FETs Suppressed by High-Quality Al2O3 Encapsulation";
Poster: Device Research Conference (DRC), Columbus, OH, USA - virtual; 2020-06-21 - 2020-06-24; in "Proceedings of the Device Research Conference (DRC)", (2020), 150 - 151. BibTeX
8. T. Knobloch, J. Michl, D. Waldhör, Yu. Illarionov, B. Stampfer, A. Grill, R. Zhou, P. Wu, M. Waltl, J. Appenzeller, T. Grasser:
"Analysis of Single Electron Traps in Nano-scaled MoS2 FETs at Cryogenic Temperatures";
Talk: Device Research Conference (DRC), Columbus, OH, USA - virtual; 2020-06-21 - 2020-06-24; in "Proceedings of the Device Research Conference (DRC)", (2020), 52 - 53. BibTeX
7. Yu. Illarionov, T. Knobloch, T. Grasser:
"Where Are the Best Insulators for 2D Field-Effect Transistors?";
Talk: Meeting of the Electrochemical Society (ECS), Montreal, Canada - virtual; (invited) 2020-05-10 - 2020-05-14; in "Abstracts of the Meeting of the Electrochemical Society (ECS)", (2020), MA2020-01/844, doi:10.1149/MA2020-0110844mtgabs. BibTeX
6. Yu. Illarionov, A.J. Molina- Mendoza, M. Waltl, T. Knobloch, M. M. Furchi, T. Mueller, T. Grasser:
"Reliability of next-generation field-effect transistors with transition metal dichalcogenides";
Talk: IEEE International Reliability Physics Symposium (IRPS), Burlingame, CA, USA; 2018-03-11 - 2018-03-15; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2018), ISBN: 978-1-5386-5479-8, 6 page(s) doi:10.1109/IRPS.2018.8353605. BibTeX
5. T. Knobloch, G. Rzepa, Yu. Illarionov, M. Waltl, D.K Polyushkin, A. Pospischil, M. M. Furchi, T. Müller, T. Grasser:
"Impact of Gate Dielectrics on the Threshold Voltage in MoS2 Transistors";
Talk: Meeting of the Electrochemical Society (ECS), National Harbor, Maryland, USA; (invited) 2017-10-01 - 2017-10-05; in "Meeting Abstracts", (2017), MA2017-02(14): 837, 2 page(s) . BibTeX
4. T. Knobloch, G. Rzepa, Yu. Illarionov, M. Waltl, F. Schanovsky, M. Jech, B. Stampfer, M. M. Furchi, T. Müller, T. Grasser:
"Physical Modeling of the Hysteresis in MoS2 Transistors";
Talk: European Solid-State Device Research Conference (ESSDERC), Leuven, Belgium; 2017-09-11 - 2017-09-14; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2017), 284 - 287 doi:10.1109/ESSDERC.2017.8066647. BibTeX
3. M. Gillinger, T. Knobloch, M. Schneider, U. Schmid:
"Harsh Environmental Surface Acoustic Wave Temperature Sensor Based on Pure and Scandium doped Aluminum Nitride on Sapphire";
Talk: Eurosensors 2017, Paris, Frankreich; 2017-09-03 - 2017-09-06; in "Proceedings of Eurosensors 2017, Paris", (2017), Vol. 1/ Iss. 4, ISSN: 2504-3900, 1 - 4 doi:10.3390/proceedings1040341. BibTeX
2. G. Rzepa, J. Franco, A. Subirats, M. Jech, A. Chasin, A. Grill, M. Waltl, T. Knobloch, B. Stampfer, T. Chiarella, N. Horiguchi, L. Ragnarsson, D. Linten, B. Kaczer, T. Grasser:
"Efficient Physical Defect Model Applied to PBTI in High-κ Stacks";
Poster: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2017-04-02 - 2017-04-06; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6641-4, XT-11.1 - XT-11.6. BibTeX
1. Yu. Illarionov, G. Rzepa, M. Waltl, T. Knobloch, J. Kim, D. Akinwande, T. Grasser:
"Accurate Mapping of Oxide Traps in Highly-Stable Black Phosphorus FETs";
Talk: IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Toyama, Japan; 2017-02-28 - 2017-03-02; in "Proceedings of the IEEE Electron Devices Technology and Manufacturing Conference (EDTM)", (2017), ISBN: 978-1-5090-4661-4, 114 - 115 doi:10.1109/EDTM.2017.7947532. BibTeX

Talks and Poster Presentations (without Proceedings-Entry)

9. Yu. Illarionov, T. Knobloch, B. Uzlu, N. S. Sokolov, M. Lemme, T. Grasser:
"Highly stable GFETs with 2nm crystalline CaF2 insulators";
Talk: 6th International Conference on Physics of 2D materials based electronics and optoelectronics (ICP2DC6, 2022), Yerevan, Armenia; 2022-10-09 - 2022-10-14; . BibTeX
8. T. Knobloch:
"Enhancing the Reliability of 2D Nanoelectronics Guided by Physical Modeling";
Talk: Workshop Monte Carlo Simulation: Beyond Moore's LAW, International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Spain; 2022-09-05. BibTeX
7. Yu. Illarionov, T. Knobloch, M. Waltl, Q. Smets, L. Panarella, B. Kaczer, T. Schram, S. Brems, D. Cott, I. Asselberghs, T. Grasser:
"Top Gate Length Dependence of Hysteresis in 300mm FAB MoS2 FETs";
Talk: Graphne 2022, Aachen, Germany; 2022-07-05 - 2022-07-08; . BibTeX
6. T. Knobloch, T. Grasser:
"Scalable and Reliable Gate Insulators for 2D Material-Based FETs";
Talk: IEEE Latin America Electron Devices Conference (LAEDC), Puebla, Mexico; (invited) 2022-07-04 - 2022-07-06; . BibTeX
5. Yu. Illarionov, T. Knobloch, T. Grasser:
"Crystalline Insulators for Scalable 2D Nanoelectronics";
Talk: International Conference on Insulating Films on Semiconductors (INFOS), Rende (CS), Italy; (invited) 2021-06-29 - 2021-07-02; . BibTeX
4. Yu. Illarionov, A. Banshchikov, N. S. Sokolov, V. V. Fedorov, S. M. Suturin, M. I. Vexler, T. Knobloch, D.K Polyushkin, T. Mueller, T. Grasser:
"Epitaxial Fluorides as a Universal Platform for More Moore and More than Moore Electronics Based on 2D Materials";
Talk: Scientific Council Meeting of the Russian Academy of Sciences, Moscow, Russia; (invited) 2021-04-08. BibTeX
3. Yu. Illarionov, B. Stampfer, F. Zhang, T. Knobloch, P. Wu, M. Waltl, A. Grill, J. Appenzeller, T. Grasser:
"Characterization of Single Defects: from Si to MoS2 FETs";
Poster: International Conference on Physics of 2D Crystals (ICP2C3), Valetta, Malta; 2018-05-29 - 2018-06-02; . BibTeX
2. L. Filipovic, M. Kampl, T. Knobloch, G. Rzepa, J. Weinbub:
"Ihr Smartphone - Ein Supercomputer vor 20 Jahren. Ein Einblick in die Mikro- und Nanoelektronik (mit Virtual Reality)";
Talk: Lange Nacht der Forschung 2018, Wien; 2018-04-13. BibTeX
1. Yu. Illarionov, M. Waltl, T. Knobloch, G. Rzepa, T. Grasser:
"Reliability Perspective of 2D Electronics";
Talk: International Conference on Physics of 2D Crystals (ICP2C2), Ha Long, Vietnam; 2017-04-25 - 2017-04-30; . BibTeX

Doctor's Theses (authored and supervised)

1. T. Knobloch:
"On the Electrical Stability of 2D Material-Based Field-Effect Transistors";
Reviewer: T. Grasser, P. Hurley, G. Düsberg; Institut für Mikroelektronik, 2021, oral examination: 2021-12-22. BibTeX

Diploma and Master Theses (authored and supervised)

1. T. Knobloch:
"Characterization and Physical Modeling of Degradation in MoS2 Transistors";
Supervisor: T. Grasser, G. Rzepa; Institut für Mikroelektronik, 2016, final examination: 2016-10-07. BibTeX

Institute for Microelectronics
Head: Univ. Prof. Dipl.-Ing. Dr. techn. Tibor Grasser
Deputy Head: O. Univ. Prof. Dipl.-Ing. Dr. techn. Dr.h.c. Siegfried Selberherr
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