Publications Theresia Knobloch
53 records
24. | F. Ducry, D. Waldhör, T. Knobloch, M. Csontos, J. Olalla, J. Leuthold, T. Grasser, M. Luisier: "An Ab Initio Study on Resistance Switching in Hexagonal Boron Nitride"; npj 2D Materials and Applications, 6, (2022), doi:10.1038/s41699-022-00340-6. BibTeX |
23. | Y. Illarionov, T. Knobloch, T. Grasser: "Inorganic Molecular Crystals for 2D Electronics"; Nature Electronics, 4, (2022), 870 - 871 doi:10.1038/s41928-021-00691-w. BibTeX |
22. | T. Knobloch, U. Burkay, Yu. Illarionov, Z. Wang, M. Otto, L. Filipovic, M. Waltl, D. Neumaier, M. Lemme, T. Grasser: "Improving Stability in Two-Dimensional Transistors with Amorphous Gate Oxides by Fermi-Level Tuning"; Nature Electronics, 5, (2022), 356 - 366 doi:10.1038/s41928-022-00768-0. BibTeX |
21. | T. Knobloch, S. Selberherr, T. Grasser: "Challenges for Nanoscale CMOS Logic Based on Two-Dimensional Materials"; Nanomaterials, 12, (invited) (2022), doi:10.3390/nano12203548. BibTeX |
20. | M. Waltl, T. Knobloch, K. Tselios, L. Filipovic, B. Stampfer, Y. Hernandez, D. Waldhör, Y. Illarionov, B. Kaczer, T. Grasser: "Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology?"; Advanced Materials, n/a, (invited) (2022), 2201082-1 - 2201082-23 doi:10.1002/adma.202201082. BibTeX |
19. | S. Das, A. Sebastian, E. Pop, C. McClellan, A. Franklin, T. Grasser, T. Knobloch, Yu. Illarionov, A. Penumatcha, J. Appenzeller, Z. Chen, W. Zhu, L. Li, U. Avci, N. Bhat, T. Anthopoulos, R. Singh: "Transistors Based on Two-Dimensional Materials for Future Integrated Circuits"; Nature Electronics, 4, (2021), 786 - 799 doi:10.1038/s41928-021-00670-1. BibTeX |
18. | Yu. Illarionov, T. Knobloch, T. Grasser: "Crystalline Insulators for Scalable 2D Nanoelectronics"; Solid-State Electronics, 185, (2021), 108043-1 - 108043-3 doi:10.1016/j.sse.2021.108043. BibTeX |
17. | T. Knobloch, Yu. Illarionov, F. Ducry, C. Schleich, S. Wachter, K. Watanabe, T. Taniguchi, T. Müller, M. Waltl, M. Lanza, M. I. Vexler, M. Luisier, T. Grasser: "The Performance Limits of Hexagonal Boron Nitride as an Insulator for Scaled CMOS Devices Based on Two-Dimensional Materials"; Nature Electronics, 4, (2021), 98 - 108 doi:10.1038/s41928-020-00529-x. BibTeX |
16. | Yu. Illarionov, T. Knobloch, T. Grasser: "Native High-k Oxides for 2D Transistors"; Nature Electronics, 3, (2020), 442 - 443 doi:10.1038/s41928-020-0464-2. BibTeX |
15. | Yu. Illarionov, T. Knobloch, M. Jech, M. Lanza, D. Akinwande, M. I. Vexler, T. Müller, M. Lemme, G. Fiori, F. Schwierz, T. Grasser: "Insulators for 2D Nanoelectronics: The Gap to Bridge"; Nature Communications, 11, (2020), 3385 doi:10.1038/s41467-020-16640-8. BibTeX |
14. | C. Wen, A. Banshchikov, Yu. Illarionov, W. Frammelsberger, T. Knobloch, F. Hui, N. S. Sokolov, T. Grasser, M. Lanza: "Dielectric Properties of Ultrathin CaF2 Ionic Crystals"; Advanced Materials, 32, (2020), 2002525-1 - 2002525-6 doi:10.1002/adma.202002525. BibTeX |
13. | Yu. Illarionov, A. Banshchikov, D.K Polyushkin, S. Wachter, T. Knobloch, M. Thesberg, L. Mennel, M. Paur, M. Stöger-Pollach, A. Steiger-Thirsfeld, M. I. Vexler, M. Waltl, N. S. Sokolov, T. Müller, T. Grasser: "Ultrathin Calcium Fluoride Insulators for Two-Dimensional Field-Effect Transistors"; Nature Electronics, 2, (2019), 230 - 235 doi:10.1038/s41928-019-0256-8. BibTeX |
12. | Yu. Illarionov, A. Banshchikov, D.K Polyushkin, S. Wachter, T. Knobloch, M. Thesberg, M. I. Vexler, M. Waltl, M. Lanza, N. S. Sokolov, A. Müller, T. Grasser: "Reliability of Scalable MoS2 FETs With 2 nm Crystalline CaF2 Insulators"; 2D Materials, 6, (2019), 045004 doi:10.1088/2053-1583/ab28f2. BibTeX |
11. | N. Oliva, Yu. Illarionov, E. Casu, M. Cavalieri, T. Knobloch, T. Grasser, A. Ionescu: "Hysteresis Dynamics in Double-Gated n-Type WSe2 FETs With High-k Top Gate Dielectric"; IEEE Journal of the Electron Devices Society, 7, (2019), 1163 - 1169 doi:10.1109/JEDS.2019.2933745. BibTeX |
10. | M. Gillinger, K. Shaposhnikov, T. Knobloch, M. Stöger-Pollach, W. Artner, K. Hradil, M. Schneider, M. Kaltenbacher, U. Schmid: "Enhanced c-axis orientation of aluminum nitride thin films by plasma-based pre-conditioning of sapphire substrates for SAW applications"; Applied Surface Science, 435, (2018), 432 - 437 doi:10.1016/j.apsusc.2017.11.113. BibTeX |
9. | T. Knobloch, G. Rzepa, Yu. Illarionov, M. Waltl, F. Schanovski, B. Stampfer, M. M. Furchi, T. Müller, T. Grasser: "A Physical Model for the Hysteresis in MoS2 Transistors"; IEEE Journal of the Electron Devices Society, 6, (2018), 972 - 978 doi:10.1109/JEDS.2018.2829933. BibTeX |
8. | G. Rzepa, J. Franco, B.J. O´Sullivan, A. Subirats, M. Simicic, G. Hellings, P. Weckx, M. Jech, T. Knobloch, M. Waltl, P. Roussel, D. Linten, B. Kaczer, T. Grasser: "Comphy -- A Compact-Physics Framework for Unified Modeling of BTI"; Microelectronics Reliability, 85, (invited) (2018), 49 - 65 doi:10.1016/j.microrel.2018.04.002. BibTeX |
7. | B. Stampfer, F. Zhang, Yu. Illarionov, T. Knobloch, P. Wu, M. Waltl, A. Grill, J. Appenzeller, T. Grasser: "Characterization of Single Defects in Ultrascaled MoS2 Field-Effect Transistors"; ACS Nano, 12, (2018), 5368 - 5375 doi:10.1021/acsnano.8b00268. BibTeX |
6. | Yu. Illarionov, T. Knobloch, M. Waltl, G. Rzepa, A. Pospischil, D.K Polyushkin, M. M. Furchi, T. Müller, T. Grasser: "Energetic Mapping of Oxide Traps in MoS2 Field-Effect Transistors"; 2D Materials, 4, (2017), 025108-1 - 025108-10 doi:10.1088/2053-1583/aa734a. BibTeX |
5. | Yu. Illarionov, K. Smithe, M. Waltl, T. Knobloch, E. Pop, T. Grasser: "Improved Hysteresis and Reliability of MoS2 Transistors With High-Quality CVD Growth and Al2O3 Encapsulation"; IEEE Electron Device Letters, 38, (2017), 1763 - 1766 doi:10.1109/LED.2017.2768602. BibTeX |
4. | Yu. Illarionov, M. Waltl, G. Rzepa, T. Knobloch, J. Kim, D. Akinwande, T. Grasser: "Highly-Stable Black Phosphorus Field-Effect Transistors with Low Density of Oxide Traps"; npj 2D Materials and Applications, 1, (2017), 23-1 - 23-7 doi:10.1038/s41699-017-0025-3. BibTeX |
3. | X. Song, F. Hui, T. Knobloch, B. Wang, Z. Fan, T. Grasser, X. Jing, Y. Shi, M. Lanza: "Piezoelectricity in Two Dimensions: Graphene vs. Molybdenum Disulfide"; Applied Physics Letters, 111, (2017), 083107-1 - 083107-4 doi:10.1063/1.5000496. BibTeX |
2. | M. Gillinger, K. Shaposhnikov, T. Knobloch, M. Schneider, M. Kaltenbacher, U. Schmid: "Impact of layer and substrate properties on the surface acoustic wave velocity in scandium doped aluminum nitride based SAW devices on sapphire"; Applied Physics Letters, 108, (2016), 231601-1 - 231601-4 doi:10.1063/1.4953259. BibTeX |
1. | Yu. Illarionov, G. Rzepa, M. Waltl, T. Knobloch, A. Grill, M. M. Furchi, T. Müller, T. Grasser: "The Role of Charge Trapping in MoS2/SiO2 and MoS2/hBN Field-Effect Transistors"; 2D Materials, 3, (2016), 035004-1 - 035004-10 doi:10.1088/2053-1583/3/3/035004. BibTeX |
1. | T. Knobloch, G. Rzepa, Yu. Illarionov, M. Waltl, D.K Polyushkin, A. Pospischil, M. M. Furchi, T. Müller, T. Grasser: "Impact of Gate Dielectrics on the Threshold Voltage in MoS2 Transistors"; in "Semiconductors, Dielectrics, and Metals for Nanoelectronics 15, Vol.80, No.1", issued by The Electrochemical Society; D. Misra, S. De Gendt, M. Houssa, K. Kita, D. Landheer (ed); ECS Transactions, (invited) 2017, ISBN: 978-1-62332-470-4, 203 - 217 doi:10.1149/08001.0203ecst. BibTeX |
17. | T. Knobloch, Yu. Illarionov, T. Grasser: "Enhancing the Stability of 2D Material-Based Transistors via Fermi-Level Tuning"; Talk: Graphene Week 2022, Munich, Germany; (invited) 2022-09-05 - 2022-09-09; in "Abstracts of Graphene Week 2022", (2022), . BibTeX |
16. | Yu. Illarionov, B. Uzlu, T. Knobloch, A. Banshchikov, V. Sverdlov, M. Vexler, N. S. Sokolov, M. Waltl, Z. Wang, D. Neumaier, M. Lemme, T. Grasser: "CVD-GFETs with Record-small Hysteresis Owing to 2nm Epitaxial CaF2 Insulators"; Talk: Device Research Conference (DRC), Columbus, OH; 2022-06-26 - 2022-06-29; in "Proceedings of the Device Research Conference (DRC)", (2022), ISBN: 978-1-6654-9883-8, 121 - 122. BibTeX |
15. | T. Knobloch, Yu. Illarionov, T. Grasser: "Finding Suitable Gate Insulators for Reliable 2D FETs"; Talk: International Reliability Physics Symposium (IRPS), Dallas, USA; (invited) 2022-03-27 - 2022-03-31; in "2022 IEEE International Reliability Physics Symposium (IRPS) : proceedings : March 27-31, 2022, Dallas, Texas / IEEE", (2022), ISBN: 978-1-6654-7950-9, 2A.1-1 - 2A.1-10 doi:10.1109/IRPS48227.2022.9764499. BibTeX |
14. | J. Michl, A. Grill, D. Waldhör, C. Schleich, T. Knobloch, E. Ioannidis, H. Enichlmair, R. Minixhofer, B. Kaczer, B. Parvais, B. Govoreanu, I. Radu, T. Grasser, M. Waltl: "Evidence of Tunneling Driven Random Telegraph Noise in Cryo-CMOS"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, USA; 2021-12-11 - 2021-12-15; in "2021 IEEE International Electron Devices Meeting (IEDM)", (2021), 31.3.1 - 31.3.3 doi:10.1109/IEDM19574.2021.9720501. BibTeX |
13. | C. Wen, Yu. Illarionov, W. Frammelsberger, T. Knobloch, T. Grasser, M. Lanza: "Outstanding Dielectric Properties of Ultra-thin CaF2 Dielectric Films"; Talk: APS March Meeting, College Park, MD, USA; 2021-03-15 - 2021-03-19; in "Bulletin of the American Physical Society", (2021), . BibTeX |
12. | Yu. Illarionov, T. Knobloch, M. Waltl, S. Majumdar, M. Soikkeli, W. Kim, S. Wachter, D.K Polyushkin, S. Arpiainen, M. Prunnila, A. Mueller, T. Grasser: "Low Variability and 1010 On/Off Current Ratio in Flexible MoS2 FETs with Al2O3 Encapsulation Improved by Parylene N"; Talk: Electronic Materials Conference (EMC), Columbus, OH, USA - virtual; 2020-06-24 - 2020-06-26; in "Proceedings of the Electronic Materials Conference (EMC)", (2020), 25. BibTeX |
11. | T. Knobloch, Yu. Illarionov, B. Uzlu, M. Waltl, D. Neumaier, M. Lemme, T. Grasser: "The Impact of the Graphene Work Function on the Stability of Flexible GFETs"; Talk: Electronic Materials Conference (EMC), Columbus, OH, USA - virtual; 2020-06-24 - 2020-06-26; in "Proceedings of the Electronic Materials Conference (EMC)", (2020), . BibTeX |
10. | Yu. Illarionov, A. Banshchikov, T. Knobloch, D.K Polyushkin, S. Wachter, V. V. Fedorov, S. M. Suturin, M. Stöger-Pollach, M. I. Vexler, N. S. Sokolov, T. Grasser: "Crystalline Calcium Fluoride: A Record-Thin Insulator for Nanoscale 2D Electronics"; Talk: Device Research Conference (DRC), Columbus, OH, USA - virtual; 2020-06-21 - 2020-06-24; in "Proceedings of the Device Research Conference (DRC)", (2020), 1 - 2 doi:10.1109/DRC50226.2020.9135160. BibTeX |
9. | Yu. Illarionov, T. Knobloch, K. Smithe, M. Waltl, R. Grady, D. Waldhör, E. Pop, T. Grasser: "Anomalous Instabilities in CVD-MoS2 FETs Suppressed by High-Quality Al2O3 Encapsulation"; Poster: Device Research Conference (DRC), Columbus, OH, USA - virtual; 2020-06-21 - 2020-06-24; in "Proceedings of the Device Research Conference (DRC)", (2020), 150 - 151. BibTeX |
8. | T. Knobloch, J. Michl, D. Waldhör, Yu. Illarionov, B. Stampfer, A. Grill, R. Zhou, P. Wu, M. Waltl, J. Appenzeller, T. Grasser: "Analysis of Single Electron Traps in Nano-scaled MoS2 FETs at Cryogenic Temperatures"; Talk: Device Research Conference (DRC), Columbus, OH, USA - virtual; 2020-06-21 - 2020-06-24; in "Proceedings of the Device Research Conference (DRC)", (2020), 52 - 53. BibTeX |
7. | Yu. Illarionov, T. Knobloch, T. Grasser: "Where Are the Best Insulators for 2D Field-Effect Transistors?"; Talk: Meeting of the Electrochemical Society (ECS), Montreal, Canada - virtual; (invited) 2020-05-10 - 2020-05-14; in "Abstracts of the Meeting of the Electrochemical Society (ECS)", (2020), MA2020-01/844, doi:10.1149/MA2020-0110844mtgabs. BibTeX |
6. | Yu. Illarionov, A.J. Molina- Mendoza, M. Waltl, T. Knobloch, M. M. Furchi, T. Mueller, T. Grasser: "Reliability of next-generation field-effect transistors with transition metal dichalcogenides"; Talk: IEEE International Reliability Physics Symposium (IRPS), Burlingame, CA, USA; 2018-03-11 - 2018-03-15; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2018), ISBN: 978-1-5386-5479-8, 6 page(s) doi:10.1109/IRPS.2018.8353605. BibTeX |
5. | T. Knobloch, G. Rzepa, Yu. Illarionov, M. Waltl, D.K Polyushkin, A. Pospischil, M. M. Furchi, T. Müller, T. Grasser: "Impact of Gate Dielectrics on the Threshold Voltage in MoS2 Transistors"; Talk: Meeting of the Electrochemical Society (ECS), National Harbor, Maryland, USA; (invited) 2017-10-01 - 2017-10-05; in "Meeting Abstracts", (2017), MA2017-02(14): 837, 2 page(s) . BibTeX |
4. | T. Knobloch, G. Rzepa, Yu. Illarionov, M. Waltl, F. Schanovsky, M. Jech, B. Stampfer, M. M. Furchi, T. Müller, T. Grasser: "Physical Modeling of the Hysteresis in MoS2 Transistors"; Talk: European Solid-State Device Research Conference (ESSDERC), Leuven, Belgium; 2017-09-11 - 2017-09-14; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2017), 284 - 287 doi:10.1109/ESSDERC.2017.8066647. BibTeX |
3. | M. Gillinger, T. Knobloch, M. Schneider, U. Schmid: "Harsh Environmental Surface Acoustic Wave Temperature Sensor Based on Pure and Scandium doped Aluminum Nitride on Sapphire"; Talk: Eurosensors 2017, Paris, Frankreich; 2017-09-03 - 2017-09-06; in "Proceedings of Eurosensors 2017, Paris", (2017), Vol. 1/ Iss. 4, ISSN: 2504-3900, 1 - 4 doi:10.3390/proceedings1040341. BibTeX |
2. | G. Rzepa, J. Franco, A. Subirats, M. Jech, A. Chasin, A. Grill, M. Waltl, T. Knobloch, B. Stampfer, T. Chiarella, N. Horiguchi, L. Ragnarsson, D. Linten, B. Kaczer, T. Grasser: "Efficient Physical Defect Model Applied to PBTI in High-κ Stacks"; Poster: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2017-04-02 - 2017-04-06; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6641-4, XT-11.1 - XT-11.6. BibTeX |
1. | Yu. Illarionov, G. Rzepa, M. Waltl, T. Knobloch, J. Kim, D. Akinwande, T. Grasser: "Accurate Mapping of Oxide Traps in Highly-Stable Black Phosphorus FETs"; Talk: IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Toyama, Japan; 2017-02-28 - 2017-03-02; in "Proceedings of the IEEE Electron Devices Technology and Manufacturing Conference (EDTM)", (2017), ISBN: 978-1-5090-4661-4, 114 - 115 doi:10.1109/EDTM.2017.7947532. BibTeX |
9. | Yu. Illarionov, T. Knobloch, B. Uzlu, N. S. Sokolov, M. Lemme, T. Grasser: "Highly stable GFETs with 2nm crystalline CaF2 insulators"; Talk: 6th International Conference on Physics of 2D materials based electronics and optoelectronics (ICP2DC6, 2022), Yerevan, Armenia; 2022-10-09 - 2022-10-14; . BibTeX |
8. | T. Knobloch: "Enhancing the Reliability of 2D Nanoelectronics Guided by Physical Modeling"; Talk: Workshop Monte Carlo Simulation: Beyond Moore's LAW, International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Spain; 2022-09-05. BibTeX |
7. | Yu. Illarionov, T. Knobloch, M. Waltl, Q. Smets, L. Panarella, B. Kaczer, T. Schram, S. Brems, D. Cott, I. Asselberghs, T. Grasser: "Top Gate Length Dependence of Hysteresis in 300mm FAB MoS2 FETs"; Talk: Graphne 2022, Aachen, Germany; 2022-07-05 - 2022-07-08; . BibTeX |
6. | T. Knobloch, T. Grasser: "Scalable and Reliable Gate Insulators for 2D Material-Based FETs"; Talk: IEEE Latin America Electron Devices Conference (LAEDC), Puebla, Mexico; (invited) 2022-07-04 - 2022-07-06; . BibTeX |
5. | Yu. Illarionov, T. Knobloch, T. Grasser: "Crystalline Insulators for Scalable 2D Nanoelectronics"; Talk: International Conference on Insulating Films on Semiconductors (INFOS), Rende (CS), Italy; (invited) 2021-06-29 - 2021-07-02; . BibTeX |
4. | Yu. Illarionov, A. Banshchikov, N. S. Sokolov, V. V. Fedorov, S. M. Suturin, M. I. Vexler, T. Knobloch, D.K Polyushkin, T. Mueller, T. Grasser: "Epitaxial Fluorides as a Universal Platform for More Moore and More than Moore Electronics Based on 2D Materials"; Talk: Scientific Council Meeting of the Russian Academy of Sciences, Moscow, Russia; (invited) 2021-04-08. BibTeX |
3. | Yu. Illarionov, B. Stampfer, F. Zhang, T. Knobloch, P. Wu, M. Waltl, A. Grill, J. Appenzeller, T. Grasser: "Characterization of Single Defects: from Si to MoS2 FETs"; Poster: International Conference on Physics of 2D Crystals (ICP2C3), Valetta, Malta; 2018-05-29 - 2018-06-02; . BibTeX |
2. | L. Filipovic, M. Kampl, T. Knobloch, G. Rzepa, J. Weinbub: "Ihr Smartphone - Ein Supercomputer vor 20 Jahren. Ein Einblick in die Mikro- und Nanoelektronik (mit Virtual Reality)"; Talk: Lange Nacht der Forschung 2018, Wien; 2018-04-13. BibTeX |
1. | Yu. Illarionov, M. Waltl, T. Knobloch, G. Rzepa, T. Grasser: "Reliability Perspective of 2D Electronics"; Talk: International Conference on Physics of 2D Crystals (ICP2C2), Ha Long, Vietnam; 2017-04-25 - 2017-04-30; . BibTeX |
1. | T. Knobloch: "On the Electrical Stability of 2D Material-Based Field-Effect Transistors"; Reviewer: T. Grasser, P. Hurley, G. Düsberg; Institut für Mikroelektronik, 2021, oral examination: 2021-12-22. BibTeX |
1. | T. Knobloch: "Characterization and Physical Modeling of Degradation in MoS2 Transistors"; Supervisor: T. Grasser, G. Rzepa; Institut für Mikroelektronik, 2016, final examination: 2016-10-07. BibTeX |