Publications Alexander Makarov

158 records

Publications in Scientific Journals

25.   Makarov, A., Roussel, P., Bury, E., Vandemaele, M., Spessot, A., Linten, D., Kaczer, B., Tyaginov, S. (2020).
Correlated Time-0 and Hot-Carrier Stress Induced FinFET Parameter Variabilities: Modeling Approach.
Micromachines, 11(7), 657. https://doi.org/10.3390/mi11070657 (reposiTUm)

24.   de Orio, R. L., Makarov, A., Selberherr, S., Goes, W., Ender, J., Fiorentini, S., Sverdlov, V. (2020).
Robust Magnetic Field-Free Switching of a Perpendicularly Magnetized Free Layer for SOT-MRAM.
Solid-State Electronics, 168(107730), 107730. https://doi.org/10.1016/j.sse.2019.107730 (reposiTUm)

23.   de Orio, R. L., Makarov, A., Goes, W., Ender, J., Fiorentini, S., Sverdlov, V. (2020).
Two-Pulse Magnetic Field-Free Switching Scheme for Perpendicular SOT-MRAM With a Symmetric Square Free Layer.
Physica B: Condensed Matter, 578(411743), 411743. https://doi.org/10.1016/j.physb.2019.411743 (reposiTUm)

22.   Makarov, A., Kaczer, B., Chasin, A., Vandemaele, M., Bury, E., Jech, M., Grill, A., Hellings, G., El-Sayed, A.-M., Grasser, T., Linten, D., Tyaginov, S. (2019).
Bi-Modal Variability of nFinFET Characteristics During Hot-Carrier Stress: A Modeling Approach.
IEEE Electron Device Letters, 40(10), 1579–1582. https://doi.org/10.1109/led.2019.2933729 (reposiTUm)

21.   Makarov, A., Kaczer, B., Roussel, P., Chasin, A., Grill, A., Vandemaele, M., Hellings, G., El-Sayed, A.-M., Grasser, T., Linten, D., Tyaginov, S. (2019).
Stochastic Modeling of the Impact of Random Dopants on Hot-Carrier Degradation in N-FinFETs.
IEEE Electron Device Letters, 40(6), 870–873. https://doi.org/10.1109/led.2019.2913625 (reposiTUm)

20.   Sverdlov, V., Makarov, A., Selberherr, S. (2019).
Two-Pulse Sub-Ns Switching Scheme for Advanced Spin-Orbit Torque MRAM.
Solid-State Electronics, 155, 49–56. https://doi.org/10.1016/j.sse.2019.03.010 (reposiTUm)

19.   Makarov, A. A., Tyaginov, S. E., Kaczer, B., Jech, M., Chasin, A., Grill, A., Hellings, G., Vexler, M. I., Linten, D., Grasser, T. (2018).
Analysis of the Features of Hot-Carrier Degradation in FinFETs.
Semiconductors, 52(10), 1298–1302. https://doi.org/10.1134/s1063782618100081 (reposiTUm)

18.   Tyaginov, S. E., Makarov, A. A., Kaczer, B., Jech, M., Chasin, A., Grill, A., Hellings, G., Vexler, M. I., Linten, D., Grasser, T. (2018).
Impact of the Device Geometric Parameters on Hot-Carrier Degradation in FinFETs.
Semiconductors, 52(13), 1738–1742. https://doi.org/10.1134/s1063782618130183 (reposiTUm)

17.   Tyaginov, S. E., Makarov, A. A., Jech, M., Vexler, M. I., Franco, J., Kaczer, B., Grasser, T. (2018).
Physical Principles of Self-Consistent Simulation of the Generation of Interface States and the Transport of Hot Charge Carriers in Field-Effect Transistors Based on Metal-Oxide-Semiconductor Structures.
Semiconductors, 52(2), 242–247. https://doi.org/10.1134/s1063782618020203 (reposiTUm)

16.   Sverdlov, V., Makarov, A., Selberherr, S. (2018).
Reliable Sub-Nanosecond Switching of a Perpendicular SOT-MRAM Cell Without External Magnetic Field.
Journal on Systemics, Cybernetics and Informatics, 16(2), 55–59. (reposiTUm)

15.   Sharma, P., Tyaginov, S., Rauch, S. E., Franco, J., Makarov, A., Vexler, M. I., Kaczer, B., Grasser, T. (2017).
Hot-Carrier Degradation Modeling of Decananometer nMOSFETs Using the Drift-Diffusion Approach.
IEEE Electron Device Letters, 38(2), 160–163. https://doi.org/10.1109/led.2016.2645901 (reposiTUm)

14.   Makarov, A., Windbacher, T., Sverdlov, V., Selberherr, S. (2016).
CMOS-Compatible Spintronic Devices: A Review.
Semiconductor Science and Technology, 31(11), 113006. https://doi.org/10.1088/0268-1242/31/11/113006 (reposiTUm)

13.   Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S. (2015).
Influence of Magnetization Variations in the Free Layer on a Non-Volatile Magnetic Flip Flop.
Solid-State Electronics, 108, 2–7. https://doi.org/10.1016/j.sse.2014.12.023 (reposiTUm)

12.   Windbacher, T., Ghosh, J., Makarov, A., Sverdlov, V., Selberherr, S. (2015).
Modelling of Multipurpose Spintronic Devices.
International Journal of Nanotechnology, 12(3/4), 313. https://doi.org/10.1504/ijnt.2015.067215 (reposiTUm)

11.   Windbacher, T., Makarov, A., Mahmoudi, H., Sverdlov, V., Selberherr, S. (2014).
Novel Bias-Field-Free Spin Transfer Oscillator.
Journal of Applied Physics, 115(17), 17C901. https://doi.org/10.1063/1.4862936 (reposiTUm)

10.   Makarov, A., Sverdlov, V., Selberherr, S. (2014).
Progress in Magnetoresistive Memory: Magnetic Tunnel Junctions With a Composite Free Layer.
International Journal of High Speed Electronics and Systems, 23(03n04), 1450014. https://doi.org/10.1142/s0129156414500141 (reposiTUm)

9.   Osintsev, D., Sverdlov, V., Makarov, A., Selberherr, S. (2013).
Current and Conductance Modulation at Elevated Temperature in Silicon and InAs-based Spin Field-Effect Transistors.
Sains Malaysiana, 42(2), 205–211. (reposiTUm)

8.   Windbacher, T., Mahmoudi, H., Makarov, A., Sverdlov, V., Selberherr, S. (2013).
Multiple Purpose Spin Transfer Torque Operated Devices.
Facta Universitatis - Series: Electronics and Energetics, 26(3), 227–238. https://doi.org/10.2298/fuee1303227w (reposiTUm)

7.   Windbacher, T., Triebl, O., Osintsev, D., Makarov, A., Sverdlov, V., Selberherr, S. (2013).
Simulation Study of an Electrically Read- And Writable Magnetic Logic Gate.
Microelectronic Engineering, 112, 188–192. https://doi.org/10.1016/j.mee.2012.12.030 (reposiTUm)

6.   Makarov, A., Sverdlov, V., Selberherr, S. (2012).
Emerging Memory Technologies: Trends, Challenges, and Modeling Methods.
Microelectronics Reliability, 52(4), 628–634. https://doi.org/10.1016/j.microrel.2011.10.020 (reposiTUm)

5.   Makarov, A., Sverdlov, V., Osintsev, D., Selberherr, S. (2012).
Fast Switching in Magnetic Tunnel Junctions With Two Pinned Layers: Micromagnetic Modeling.
IEEE Transactions on Magnetics, 48(4), 1289–1292. https://doi.org/10.1109/tmag.2011.2173565 (reposiTUm)

4.   Osintsev, D., Sverdlov, V., Stanojević, Z., Makarov, A., Selberherr, S. (2012).
Temperature Dependence of the Transport Properties of Spin Field-Effect Transistors Built With InAs and Si Channels.
Solid-State Electronics, 71, 25–29. https://doi.org/10.1016/j.sse.2011.10.015 (reposiTUm)

3.   Makarov, A., Sverdlov, V., Osintsev, D., Selberherr, S. (2011).
Reduction of Switching Time in Pentalayer Magnetic Tunnel Junctions With a Composite-Free Layer.
Physica Status Solidi (RRL) - Rapid Research Letters, 5(12), 420–422. (reposiTUm)

2.   Makarov, A., Sverdlov, V., Selberherr, S. (2011).
Stochastic Model of the Resistive Switching Mechanism in Bipolar Resistive Random Access Memory: Monte Carlo Simulations.
Journal of Vacuum Science, Technology B, 29(1), 01AD03. https://doi.org/10.1116/1.3521503 (reposiTUm)

1.   Makarov, A., Sverdlov, V., Selberherr, S. (2010).
Stochastic Modeling of Bipolar Resistive Switching in Metal-Oxide Based Memory by Monte Carlo Technique.
Journal of Computational Electronics, 9(3–4), 146–152. https://doi.org/10.1007/s10825-010-0317-8 (reposiTUm)

Contributions to Books

9.   Windbacher, T., Makarov, A., Selberherr, S., Mahmoudi, H., Malm, B. G., Ekström, M., Östling, M. (2019).
The Exploitation of the Spin-Transfer Torque Effect for CMOS Compatible Beyond Von Neumann Computing.
In S. K. Kurinec, S. Walia, K. Iniewski (Eds.), Energy Efficient Computing, Electronics: Devices to Systems; Devices, Circuits, and Systems Series (pp. 93–155). CRC Press. (reposiTUm)

8.   Makarov, A., Sverdlov, V., Selberherr, S. (2018).
Ultra-Fast Switching of a Free Magnetic Layer With Out-Of-Plane Magnetization in Spin-Orbit Torque MRAM Cells.
In J. A. Martino, J.-P. Raskin, S. Selberherr, H. Ishii, F. Gamiz, B.-Y. Nguyen, A. Yoshino (Eds.), ECS Transactions (pp. 213–218). ECS Transactions. https://doi.org/10.1149/08508.0213ecst (reposiTUm)

7.   Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S. (2016).
A Universal Nonvolatile Processing Environment.
In S. Luryi, J. Xu, A. Zaslavsky (Eds.), Future Trends in Microelectronics - Journey into the Unknown (pp. 83–91). John Wiley, Sons. (reposiTUm)

6.   Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S. (2015).
Novel Buffered Magnetic Logic Gate Grid.
In F. Roozeboom, V. Narayanan, K. Kakushima, P. J. Timans, E. P. Gusev, Z. Karim, S. DeGendt (Eds.), ECS Transactions (pp. 295–303). ECS Transactions. https://doi.org/10.1149/06604.0295ecst (reposiTUm)

5.   Makarov, A., Sverdlov, V., Selberherr, S. (2015).
Progress in Magnetoresistive Memory: Magnetic Tunnel Junctions With a Composite Free Layer.
In S. Cristoloveanu, M. Shur (Eds.), Frontiers in Electronics. World Scientific Publishing Co. https://doi.org/10.1142/9789814656917_0001 (reposiTUm)

4.   Makarov, A., Sverdlov, V., Selberherr, S. (2014).
Composite Magnetic Tunnel Junctions for Fast Memory Devices and Efficient Spin-Torque Nano-Oscillators.
In G. Lee (Ed.), Future Information Engineering. WITPRESS. https://doi.org/10.2495/icie130451 (reposiTUm)

3.   Makarov, A., Sverdlov, V., Selberherr, S. (2013).
Magnetic Tunnel Junctions With a Composite Free Layer: A New Concept for Future Universal Memory.
In S. Luryi, J. Xu, A. Zaslavsky (Eds.), Future Trends in Microelectronics - Frontiers and Innovations (pp. 93–101). John Wiley, Sons. (reposiTUm)

2.   Makarov, A., Sverdlov, V., Selberherr, S. (2011).
Modeling of the SET and RESET Process in Bipolar Resistive Oxide-Based Memory Using Monte Carlo Simulations.
In I. Dimov, S. Dimova, N. T. Kolkovska (Eds.), Numerical Methods and Applications (pp. 87–94). Springer Berlin Heidelberg. https://doi.org/10.1007/978-3-642-18466-6_9 (reposiTUm)

1.   Osintsev, D., Sverdlov, V., Stanojevic, Z., Makarov, A., Weinbub, J., Selberherr, S. (2011).
Properties of Silicon Ballistic Spin Fin-Based Field-Effect Transistors.
In Y. Omura, H. Ishii, B.-Y. Nguyen, S. Selberherr, F. Gamiz, J. A. Martino, J.-P. Raskin (Eds.), ECS Transactions (pp. 277–282). ECS Transactions. https://doi.org/10.1149/1.3570806 (reposiTUm)

Talks and Poster Presentations (with Proceedings-Entry)

123.   Tyaginov, S., Grill, A., Vandemaele, M., Grasser, T., Hellings, G., Makarov, A., Jech, M., Linten, D., Kaczer, B. (2020).
A Compact Physics Analytical Model for Hot-Carrier Degradation.
In 2020 IEEE International Reliability Physics Symposium (IRPS), Waikoloa, HI, USA. https://doi.org/10.1109/irps45951.2020.9128327 (reposiTUm)

122.   Vasilev, A., Jech, M., Grill, A., Rzepa, G., Schleich, C., Makarov, A., Pobegen, G., Grasser, T., Waltl, M., Tyaginov, S. (2020).
Modeling the Hysteresis of Current-Voltage Characteristics in 4h-SiC Transistors.
In 2020 IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA. https://doi.org/10.1109/iirw49815.2020.9312864 (reposiTUm)

121.   Orio, R., Makarov, A., Goes, W., Ender, J., Fiorentini, S., Selberherr, S., Sverdlov, V. (2020).
Switching of a Perpendicularly Magnetized Free-Layer by Spin-Orbit-Torques With Reduced Currents.
In Proceedings of the World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI) (pp. 58–61), Orlando, Florida, USA. (reposiTUm)

120.   Orio, R., Makarov, A., Ender, J., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V. (2019).
A Dynamical Approach to Fast and Reliable External Field Free Perpendicular Magnetization Reversal by Spin-Orbit Torques.
In Proceedings of the IEEE International Electron Devices Meeting (IEDM) Special Poster Session Dedicated to MRAM (p. 1), San Francisco, CA, USA, Austria. (reposiTUm)

119.   Orio, R., Makarov, A., Selberherr, S., Goes, W., Ender, J., Fiorentini, S., Sverdlov, V. (2019).
Efficient Magnetic Field Free Switching of Symmetric Perpendicular Magnetic Free Layer for Advanced SOT-MRAM.
In Proceedings of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) (pp. 152–153), Bologna, Italy. (reposiTUm)

118.   de Orio, R., Makarov, A., Selberherr, S., Goes, W., Ender, J., Fiorentini, S., Sverdlov, V. (2019).
Efficient Magnetic Field-Free Switching of a Symmetric Perpendicular Magnetic Free Layer for Advanced SOT-MRAM.
In 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS). https://doi.org/10.1109/eurosoi-ulis45800.2019.9041920 (reposiTUm)

117.   Vandemaele, M., Kaczer, B., Tyaginov, S., Stanojevic, Z., Makarov, A., Chasin, A., Bury, E., Mertens, H., Linten, D., Groeseneken, G. (2019).
Full ($V_{\mathrm{g}},\ V_{\mathrm{d}}$) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs.
In 2019 IEEE International Reliability Physics Symposium (IRPS), Waikoloa, HI, USA. https://doi.org/10.1109/irps.2019.8720406 (reposiTUm)

116.   Makarov, A., Kaczer, B., Roussel, P., Chasin, A., Grill, A., Vandemaele, M., Hellings, G., El-Sayed, A., Grasser, T., Linten, D., Tyaginov, S. (2019).
Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs.
In 2019 IEEE International Reliability Physics Symposium (IRPS), Waikoloa, HI, USA. https://doi.org/10.1109/irps.2019.8720584 (reposiTUm)

115.   Makarov, A., Roussel, P., Bury, E., Vandemaele, M., Spessot, A., Linten, D., Kaczer, B., Tyaginov, S. (2019).
On Correlation Between Hot-Carrier Stress Induced Device Parameter Degradation and Time-Zero Variability.
In 2019 IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA. https://doi.org/10.1109/iirw47491.2019.8989882 (reposiTUm)

114.   Tyaginov, S., Chasin, A., Makarov, A., El-Sayed, A., Jech, M., De Keersgieter, A., Eneman, G., Vandemaele, M., Franco, J., Linten, D., Kaczer, B. (2019).
Physics-Based Modeling of Hot-Carrier Degradation in Ge NWFETs.
In Extended Abstracts of the International Conference on Solid State Devices and Materials (SSDM) (pp. 565–566), Fukuoka, Japan. (reposiTUm)

113.   Orio, R., Makarov, A., Selberherr, S., Gös, W., Ender, J., Fiorentini, S., Sverdlov, V. (2019).
Robust Magnetic Field Free Switching Scheme for Perpendicular Free Layer in Advanced Spin Orbit Torque Magnetoresistive Random Access Memory.
In Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN 2019) (pp. 69–71), Evanston, IL, United States. (reposiTUm)

112.   Makarov, A., Kaczer, B., Roussel, P., Chasin, A., Vandemaele, M., Hellings, G., El-Sayed, A., Jech, M., Grasser, T., Linten, D., Tyaginov, S. (2019).
Simulation Study: The Effect of Random Dopants and Random Traps on Hot-Carrier Degradation in nFinFETs.
In Extended Abstracts of the International Conference on Solid State Devices and Materials (SSDM) (pp. 609–610), Fukuoka, Japan. (reposiTUm)

111.   Makarov, A., Kaczer, B., Roussel, P., Chasin, A., Vandemaele, M., Hellings, G., El-Sayed, A., Jech, M., Grasser, T., Linten, D., Tyaginov, S. (2019).
Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants.
In ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC), Montreux, Austria. https://doi.org/10.1109/essderc.2019.8901721 (reposiTUm)

110.   de Orio, R., Makarov, A., Selberherr, S., Gös, W., Ender, J., Fiorentini, S., Sverdlov, V. (2019).
Switching Speedup of the Magnetic Free Layer of Advanced SOT-MRAM.
In ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC), Cracow, Poland. https://doi.org/10.1109/essderc.2019.8901780 (reposiTUm)

109.   Orio, R., Makarov, A., Goes, W., Ender, J., Fiorentini, S., Sverdlov, V. (2019).
Two-Pulse Magnetic Field Free Switching Scheme for Advanced Perpendicular SOT-MRAM.
In Book of Abstracts of the International Symposium on Hysteresis Modeling and Micromagnetics (HMM) (p. 34), Heraklion, Greece. (reposiTUm)

108.   Tyaginov, S., El-Sayed, A., Makarov, A., Chasin, A., Arimura, H., Vandemaele, M., Jech, M., Capogreco, E., Witters, L., Grill, A., De Keersgieter, A., Eneman, G., Linten, D., Kaczer, B. (2019).
Understanding and Physical Modeling Superior Hot-Carrier Reliability of Ge pNWFETs.
In 2019 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA. https://doi.org/10.1109/iedm19573.2019.8993644 (reposiTUm)

107.   Tyaginov, S., Jech, M., Rzepa, G., Grill, A., El-Sayed, A., Pobegen, G., Makarov, A., Grasser, T. (2018).
Border Trap Based Modeling of SiC Transistor Transfer Characteristics.
In 2018 International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA. https://doi.org/10.1109/iirw.2018.8727083 (reposiTUm)

106.   Vandemaele, M., Kaczer, B., Stanojevic, Z., Tyaginov, S., Makarov, A., Chasin, A., Mertens, H., Linten, D., Groeseneken, G. (2018).
Distribution Function Based Simulations of Hot-Carrier Degradation in Nanowire FETs.
In 2018 International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA. https://doi.org/10.1109/iirw.2018.8727081 (reposiTUm)

105.   Sverdlov, V., Makarov, A., Selberherr, S. (2018).
Fast, Reliable, and Field-Free Perpendicular Magnetization Reversal in Advanced Spin-Orbit Torque MRAM by Two-Pulse Switching.
In Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS) (pp. 124–125), Kona. (reposiTUm)

104.   Makarov, A., Sverdlov, V., Selberherr, S. (2018).
Field-Free Fast Reliable Deterministic Switching in Perpendicular Spin-Orbit Torque MRAM Cells.
In 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, TX, United States. https://doi.org/10.1109/sispad.2018.8551716 (reposiTUm)

103.   Sverdlov, V., Makarov, A., Selberherr, S. (2018).
Magnetic Field-Free Fast Reliable Switching by Spin-Orbit Torque in Advanced MRAM.
In Proceedings of Micromagnetics: Analysis, Numerics, Applications (MANA) 2018 (p. 32), Vienna, Austria. (reposiTUm)

102.   Sverdlov, V., Makarov, A., Selberherr, S. (2018).
Reliable Sub-Nanosecond Switching of a Perpendicular SOT-MRAM Cell Without External Magnetic Field.
In Proceedings of the 22nd World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI) (pp. 30–32), Orlando, Florida, USA. (reposiTUm)

101.   Sverdlov, V., Makarov, A., Selberherr, S. (2018).
Switching Current Reduction in Advanced Spin-Orbit Torque MRAM.
In Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) (pp. 57–58), Bologna, Italy. (reposiTUm)

100.   Makarov, A., Sverdlov, V., Selberherr, S. (2018).
Two-Pulse Sub-Ns Switching of a Perpendicular Spin-Orbit Torque MRAM Cell Without External Magnetic Field.
In Abstracts Advanced Research Workshop Future Trends in Microelectronics: Vingt Ans Après (p. 51), Sardinia, Italy. (reposiTUm)

99.   Makarov, A., Sverdlov, V., Selberherr, S. (2018).
Ultra-Fast Switching of a Free Magnetic Layer With Out-Of-Plane Magnetization in Spin-Orbit Torque MRAM Cells.
In Proceedings of the 233rd ECS Meeting (ECS), Seattle, Washington, USA. (reposiTUm)

98.   Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S. (2017).
Analysis of a Spin-Transfer Torque Based Copy Operation of a Buffered Magnetic Processing Environment.
In Proceedings of the 21st World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI) (pp. 142–146), Orlando, Florida, USA. (reposiTUm)

97.   Manstetten, P., Simonka, V., Diamantopoulos, G., Gnam, L., Makarov, A., Hössinger, A., Weinbub, J. (2017).
Computational and Numerical Challenges in Semiconductor Process Simulation.
In CSE17 Abstracts (p. 46), Atlanta, GA, USA. (reposiTUm)

96.   Selberherr, S., Windbacher, T., Makarov, A., Sverdlov, V. (2017).
Exploiting Spin-Transfer Torque for Non-Volatile Computing.
In Book of Abstracts of BIT's 3rd Annual World Congress of Smart Materials-2017 (p. 130), Singapore. (reposiTUm)

95.   Makarov, A., Tyaginov, S., Kaczer, B., Jech, M., Chasin, A., Grill, A., Hellings, G., Vexler, M., Linten, D., Grasser, T. (2017).
Hot-Carrier Degradation in FinFETs: Modeling, Peculiarities, and Impact of Device Topology.
In 2017 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA. https://doi.org/10.1109/iedm.2017.8268381 (reposiTUm)

94.   Sverdlov, V., Mahmoudi, H., Windbacher, T., Makarov, A., Weinbub, J., Selberherr, S. (2017).
MTJs - Spin-Based Binary Memristors for Non-Volatile Memory and Logic Applications.
In Abstracts of the Energy-Materials-Nanotechnology Meeting on Memristive Switching, Network (EMN) (pp. 33–34), Milan, Italy. (reposiTUm)

93.   Sverdlov, V., Makarov, A., Weinbub, J., Selberherr, S. (2017).
Non-Volatility by Spin in Modern Nanoelectronics.
In 2017 IEEE 30th International Conference on Microelectronics (MIEL), Beograd. https://doi.org/10.1109/miel.2017.8190061 (reposiTUm)

92.   Sharma, P., Tyaginov, S., Rauch, S., Franco, J., Kaczer, B., Makarov, A., Vexler, M., Grasser, T. (2016).
A Drift-Diffusion-Based Analytic Description of the Energy Distribution Function for Hot-Carrier Degradation in Decananometer nMOSFETs.
In 2016 46th European Solid-State Device Research Conference (ESSDERC), Montreux, Austria. https://doi.org/10.1109/essderc.2016.7599677 (reposiTUm)

91.   Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S. (2016).
Layer Coupling and Read Disturbances in a Buffered Magnetic Logic Environment.
In Spintronics IX (pp. 99312M-1–99312M-12), San Diego, United States. https://doi.org/10.1117/12.2236151 (reposiTUm)

90.   Windbacher, T., Mahmoudi, H., Makarov, A., Sverdlov, V., Selberherr, S. (2016).
Logic-In-Memory: A Non-Volatile Processing Environment for the Post CMOS Age.
In Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nürnberg, Germany. (reposiTUm)

89.   Sverdlov, V., Makarov, A., Windbacher, T., Selberherr, S. (2016).
Magnetic Field Dependent Tunneling Magnetoresistance Through a Quantum Well Between Ferromagnetic Contacts.
In 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nuremberg, Germany. https://doi.org/10.1109/sispad.2016.7605210 (reposiTUm)

88.   Sverdlov, V., Ghosh, J., Makarov, A., Windbacher, T., Selberherr, S. (2016).
Nanoelectronics With Spin.
In Book of Abstracts of the World Congress and Expo on Nanotechnology and Materials Science (pp. 19–20), Dubai, United Arab Emirates. (reposiTUm)

87.   Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S. (2016).
Novel Magnetic Devices for Memory and Non-Volatile Computing Applications.
In 2016 Conference Program of the Emerging Technologies Communication Microsystems Optoelectronics Sensing (ETCMOS) (p. 14), Montreal, QC, Canada. (reposiTUm)

86.   Tyaginov, S., Makarov, A., Jech, M., Franco, J., Sharma, P., Kaczer, B., Grasser, T. (2016).
On the Effect of Interface Traps on the Carrier Distribution Function During Hot-Carrier Degradation.
In 2016 IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA. https://doi.org/10.1109/iirw.2016.7904911 (reposiTUm)

85.   Makarov, A., Sverdlov, V., Windbacher, T., Selberherr, S. (2016).
Silicon Spintronics.
In Proceedings of the ICEM 2016 (p. 1), Singapur. (reposiTUm)

84.   Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S. (2016).
The Exploitation of Magnetization Orientation Encoded Spin-Transfer Torque for an Ultra Dense Non-Volatile Magnetic Shift Register.
In 2016 46th European Solid-State Device Research Conference (ESSDERC), Montreux, Austria. https://doi.org/10.1109/essderc.2016.7599648 (reposiTUm)

83.   Makarov, A., Windbacher, T., Sverdlov, V., Selberherr, S. (2015).
A Novel Method of SOT-MRAM Switching.
In Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN), Kaanapali. (reposiTUm)

82.   Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S. (2015).
A Universal Nonvolatile Processing Environment.
In Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Journey into the Unknown (p. 62), Mallorca, Spain. (reposiTUm)

81.   Sverdlov, V., Ghosh, J., Makarov, A., Windbacher, T., Selberherr, S. (2015).
CMOS-compatible Spintronic Devices.
In 2015 30th Symposium on Microelectronics Technology and Devices (SBMicro), Brasilia, Brazil. https://doi.org/10.1109/sbmicro.2015.7298103 (reposiTUm)

80.   Makarov, A., Windbacher, T., Sverdlov, V., Selberherr, S. (2015).
Concept of a SOT-MRAM Based on 1Transistor-1mtj-Cell Structure.
In Extended Abstracts of the International Conference on Solid State Devices and Materials (SSDM) (pp. 140–141), Fukuoka, Japan. (reposiTUm)

79.   Makarov, A., Windbacher, T., Sverdlov, V., Selberherr, S. (2015).
Efficient High-Frequency Spin-Torque Oscillators Composed of Two Three-Layer MgO-MTJs With a Common Free Layer.
In Proceedings of 21st Iberchip Worshop, Montevideo, Uruguay. (reposiTUm)

78.   Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S. (2015).
Improving the Performance of a Non-Volatile Magnetic Flip Flop by Exploiting the Spin Hall Effect.
In 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington, DC, United States. https://doi.org/10.1109/sispad.2015.7292357 (reposiTUm)

77.   Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S. (2015).
Novel Buffered Magnetic Logic Gate Grid.
In Proceedings of the 227th ECS Meeting (ECS) (p. 2), Honolulu, Austria. (reposiTUm)

76.   Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S. (2015).
Novel Spintronic Devices for Embedded Spin-Based Memories and Non-Volatile Computing.
In Abstracts of the Energy-Materials-Nanotechnology Fall Meeting (EMN) (pp. 15–16), Orlando, USA. (reposiTUm)

75.   Makarov, A., Windbacher, T., Sverdlov, V., Selberherr, S. (2015).
SOT-MRAM Based on 1Transistor-1mtj-Cell Structure.
In Technical Digest of the Non-Volatile Memory Technology Symposium (NVMTS) (pp. 105–106), Beijing, China. (reposiTUm)

74.   Makarov, A., Windbacher, T., Sverdlov, V., Selberherr, S. (2015).
SOT-MRAM Based on 1Transistor-1mtj-Cell Structure.
In 2015 15th Non-Volatile Memory Technology Symposium (NVMTS). https://doi.org/10.1109/nvmts.2015.7457479 (reposiTUm)

73.   Sverdlov, V., Ghosh, J., Makarov, A., Windbacher, T., Selberherr, S. (2015).
Silicon Spintronics.
In Conference Abstracts, NATO Advanced Research Workshop "Functional Nanomaterials and Devices for Electronics, Sensors, Energy Harvesting" (pp. 44–45), Lviv, Ukrain. (reposiTUm)

72.   Sverdlov, V., Ghosh, J., Makarov, A., Windbacher, T., Selberherr, S. (2015).
Silicon Spintronics: Recent Advances and Challenges.
In Proceedings of the 2015 International Conference and School for Young Scientists Information Technology and Nanotechnology (ITNT) (pp. 6–7), Samara, Russia. (reposiTUm)

71.   Sverdlov, V., Ghosh, J., Makarov, A., Windbacher, T., Selberherr, S. (2015).
Silicon and CMOS-Compatible Spintronics.
In Proceedings of the International Conference on Applied Physics, Simulation and Computers (APSAC 2015) (pp. 17–20), Vienna, Austria, Austria. (reposiTUm)

70.   Sverdlov, V., Ghosh, J., Makarov, A., Windbacher, T., Selberherr, S. (2015).
Spin-Driven Applications of Silicon and CMOS-Compatible Devices.
In Abstracts of the BIT's 5th Annual Congress of Nano Science, Technology-2015 (p. 175), Xi'an, China. (reposiTUm)

69.   Makarov, A., Sverdlov, V., Selberherr, S. (2014).
Composite Magnetic Tunnel Junctions for Fast Memory Devices and Efficient Spin-Torque Nano-Oscillators.
In Future Information Engineering. https://doi.org/10.2495/icie130451 (reposiTUm)

68.   Windbacher, T., Makarov, A., Mahmoudi, H., Sverdlov, V., Selberherr, S. (2014).
Frequency Dependence Study of a Bias Field-Free Nano-Scale Oscillator.
In 2014 International Workshop on Computational Electronics (IWCE). https://doi.org/10.1109/iwce.2014.6865862 (reposiTUm)

67.   Sverdlov, V., Mahmoudi, H., Makarov, A., Windbacher, T., Selberherr, S. (2014).
Magnetic Tunnel Junctions for Future Memory and Logic-In-Memory Applications.
In Proceedings of the 21st International Conference on Mixed Design of Integrated Circuits and Systems (p. 17), Gdynia, Poland. (reposiTUm)

66.   Makarov, A., Windbacher, T., Sverdlov, V., Selberherr, S. (2014).
Micromagnetic Modeling of a Bias-Field-Free Spin-Torque Oscillator Based on Two MgO-MTJs With a Shared Free Layer.
In Book of Abstracts (p. 166), Vienna, Austria. (reposiTUm)

65.   Makarov, A., Osintsev, D., Sverdlov, V., Selberherr, S. (2014).
Modeling Spin-Based Electronic Devices.
In Book of Abstracts (p. 1), Phoenix, USA. (reposiTUm)

64.   Sverdlov, V., Ghosh, J., Mahmoudi, H., Makarov, A., Osintsev, D., Windbacher, T., Selberherr, S. (2014).
Modeling of Spin-Based Silicon Technology.
In 2014 15th International Conference on Ultimate Integration on Silicon (ULIS), Bologna, Austria. https://doi.org/10.1109/ulis.2014.6813891 (reposiTUm)

63.   Sverdlov, V., Ghosh, J., Mahmoudi, H., Makarov, A., Osintsev, D., Windbacher, T., Selberherr, S. (2014).
Modeling Spin-Based Electronic Devices.
In 2014 29th International Conference on Microelectronics Proceedings - MIEL 2014, Beograd. https://doi.org/10.1109/miel.2014.6842081 (reposiTUm)

62.   Makarov, A., Windbacher, T., Sverdlov, V., Selberherr, S. (2014).
New Design of Spin-Torque Nano-Oscillators.
In Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS) (p. 63), Kona. (reposiTUm)

61.   Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S. (2014).
Pushing a Non-Volatile Magnetic Device Structure Towards a Universal CMOS Logic Replacement.
In Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS) (p. 62), Kona. (reposiTUm)

60.   Sverdlov, V., Makarov, A., Selberherr, S. (2014).
Structural Optimization of MTJs for STT-MRAM and Oscillator Applications.
In Abstracts: 2014 CMOS Emerging Technologies Research Symposium (p. 19), Whistler, BC, Canada. (reposiTUm)

59.   Makarov, A., Sverdlov, V., Selberherr, S. (2013).
Bias-Field-Free Spin-Torque Oscillator Based on Two MgO-MTJs With a Shared Free Layer: Micromagnetic Modeling.
In Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN) (p. 2), Kaanapali. (reposiTUm)

58.   Makarov, A., Sverdlov, V., Selberherr, S. (2013).
Composite Magnetic Tunnel Junctions for Fast Memory Devices and Efficient Spin-Torque Nano-Oscillators.
In Abstracts Intl.Conf.on Information Engineering (ICIE) (p. 7), Hong Kong. (reposiTUm)

57.   Makarov, A., Sverdlov, V., Selberherr, S. (2013).
Concept of a Bias-Field-Free Spin-Torque Oscillator Based on Two MgO-MTJs.
In Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials (SSDM 2013) (pp. 796–797), Tsukuba, Austria. (reposiTUm)

56.   Makarov, A., Sverdlov, V., Selberherr, S. (2013).
Fast Switching STT-MRAM Cells for Future Universal Memory.
In Abstracts Advanced Workshop on Frontiers in Electronics (WOFE) (p. 1), San Juan, Puerto Rico. (reposiTUm)

55.   Makarov, A., Sverdlov, V., Selberherr, S. (2013).
Geometry Optimization of Spin-Torque Oscillators Composed of Two MgO-MTJs With a Shared Free Layer.
In Proceedings of the International Conference on Nanoscale Magnetism (p. 69), Istanbul, Turkey. (reposiTUm)

54.   Makarov, A., Sverdlov, V., Selberherr, S. (2013).
Magnetic Oscillation of the Transverse Domain Wall in a Penta-Layer MgO-MTJ.
In Proceedings of the 21st International Symposium Nanostructures (pp. 338–339), St. Petersburg, Russian federation. (reposiTUm)

53.   Sverdlov, V., Mahmoudi, H., Makarov, A., Osintsev, D., Weinbub, J., Windbacher, T., Selberherr, S. (2013).
Modeling Spin-Based Devices in Silicon.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 70–71), Urbana-Champaign, IL, USA. (reposiTUm)

52.   Windbacher, T., Makarov, A., Mahmoudi, H., Sverdlov, V., Selberherr, S. (2013).
Novel Bias-Field-Free Large Gain Spin-Transfer Oscillator.
In Abstract Book of 58th Annual Conference of Magnetism and Magnetic Materials (MMM) (pp. 456–457), San Jose, CA, USA. (reposiTUm)

51.   Makarov, A., Sverdlov, V., Osintsev, D., Selberherr, S. (2013).
Simulation of Magnetic Oscillations in a System of Two MTJs With a Shared Free Layer.
In Abstracts Book of The 21st International Conference on Soft Magnetic Materials (p. 101), Turin, Italy. (reposiTUm)

50.   Makarov, A., Sverdlov, V., Selberherr, S. (2013).
Structural Optimization of MTJs With a Composite Free Layer.
In Spintronics VI (pp. 88132Q-1–88132Q-9), San Diego, United States. https://doi.org/10.1117/12.2025568 (reposiTUm)

49.   Windbacher, T., Triebl, O., Osintsev, D., Makarov, A., Sverdlov, V., Selberherr, S. (2013).
Switching Optimization of an Electrically Read- And Writable Magnetic Logic Gate.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 238–239), Urbana-Champaign, IL, USA. (reposiTUm)

48.   Makarov, A., Sverdlov, V., Selberherr, S. (2013).
Transverse Domain Wall Formation in a Free Layer: A Mechanism for Switching Failure in a MTJ-based STT-MRAM.
In Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore. https://doi.org/10.1109/ipfa.2013.6599165 (reposiTUm)

47.   Osintsev, D., Makarov, A., Sverdlov, V., Selberherr, S. (2013).
Using Strain to Increase the Reliability of Scaled Spin MOSFETs.
In Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore. https://doi.org/10.1109/ipfa.2013.6599272 (reposiTUm)

46.   Osintsev, D., Makarov, A., Sverdlov, V., Selberherr, S. (2012).
Efficient Simulations of the Transport Properties of Spin Field-Effect Transistors Built on Silicon Fins.
In Large-Scale Scientific Computing: 8th International Conference, LSSC 2011 (pp. 630–637), Sozopol, Bulgaria. https://doi.org/10.1007/978-3-642-29843-1_72 (reposiTUm)

45.   Makarov, A., Selberherr, S., Sverdlov, V. (2012).
Emerging Non-Volatile Memories for Ultra-Low Power Applications.
In Tagungsband zur Informationstagung Mikroelektronik 12 (pp. 21–24), Vienna, Austria. (reposiTUm)

44.   Sverdlov, V., Makarov, A., Selberherr, S. (2012).
Fast Switching in MTJs With a Composite Free Layer.
In Abstracts of BIT's 2nd Annual World Congress of Nanoscience and Nanotechnology 2012 (p. 291), Qingdao, China. (reposiTUm)

43.   Windbacher, T., Osintsev, D., Makarov, A., Sverdlov, V., Selberherr, S. (2012).
Fully Electrically Read- Write Magneto Logic Gates.
In Book of Abstracts (p. 1), Crete, Greece. (reposiTUm)

42.   Makarov, A., Sverdlov, V., Selberherr, S. (2012).
Geometry Dependence of the Switching Time in MTJs With a Composite Free Layer.
In Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS) (p. 21), Kona. (reposiTUm)

41.   Makarov, A., Sverdlov, V., Selberherr, S. (2012).
High Thermal Stability and Low Switching Energy Barrier in Spin-Transfer Torque RAM With Composite Free Layer.
In Extended Abstracts of 2012 International Conference on Solid State Devices and Materials (p. 2), Nagoya, Japan. (reposiTUm)

40.   Makarov, A., Sverdlov, V., Selberherr, S. (2012).
MTJs With a Composite Free Layer for High-Speed Spin Transfer Torque RAM: Micromagnetic Simulations.
In 2012 15th International Workshop on Computational Electronics. https://doi.org/10.1109/iwce.2012.6242842 (reposiTUm)

39.   Makarov, A., Sverdlov, V., Selberherr, S. (2012).
Micromagnetic Simulations of an MTJ With a Composite Free Layer for High-Speed Spin Transfer Torque RAM.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 225–226), Urbana-Champaign, IL, USA. (reposiTUm)

38.   Makarov, A., Sverdlov, V., Selberherr, S. (2012).
Modeling Emerging Non-Volatile Memories: Current Trends and Challenges.
In Physics Procedia (pp. 99–104), Macao, China. https://doi.org/10.1016/j.phpro.2012.03.056 (reposiTUm)

37.   Makarov, A., Sverdlov, V., Selberherr, S. (2012).
New Trends in Microelectronics: Towards an Ultimate Memory Concept.
In 2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS). https://doi.org/10.1109/iccdcs.2012.6188899 (reposiTUm)

36.   Makarov, A., Sverdlov, V., Selberherr, S. (2012).
New Trends in Microelectronics: Towards an Ultimate Memory Concept.
In 2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS), Playa del Carmen. https://doi.org/10.1109/iccdcs.2012.6188887 (reposiTUm)

35.   Makarov, A., Sverdlov, V., Selberherr, S. (2012).
Recent Developments in Advanced Memory Modeling.
In 2012 28th International Conference on Microelectronics Proceedings, Beograd. https://doi.org/10.1109/miel.2012.6222795 (reposiTUm)

34.   Makarov, A., Sverdlov, V., Selberherr, S. (2012).
Reduction of the Switching Current in Spin Transfer Torque Random Access Memory.
In Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Into the Cross Currents (p. 49), Corsica, France. (reposiTUm)

33.   Makarov, A., Sverdlov, V., Selberherr, S. (2012).
STT-RAM With a Composite Free Layer: High Thermal Stability, Low Switching Barrier, and Sharp Switching Time Distribution.
In Abstract of Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012) (p. H4), Sydney, Australia. (reposiTUm)

32.   Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S. (2012).
Simulations of an Electrical Read-Write Operation of a Magnetic XOR Gate.
In Abstract of Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012) (p. J3), Sydney, Australia. (reposiTUm)

31.   Makarov, A., Sverdlov, V., Selberherr, S. (2012).
Study of Self-Accelerating Switching in MTJs With Composite Free Layer by Micromagnetic Simulations.
In 2012 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 229–232), Denver, Colorado, United States. (reposiTUm)

30.   Osintsev, D., Sverdlov, V., Makarov, A., Selberherr, S. (2012).
Surface Roughness Induced Spin Scattering and Relaxation in Silicon SOI MOSFETs.
In Abstract of Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012) (p. B3), Sydney, Australia. (reposiTUm)

29.   Sverdlov, V., Makarov, A., Selberherr, S. (2012).
Switching Energy Barrier and Current Reduction in MTJs With Composite Free Layer.
In Bulletin American Physical Society (APS March Meeting 2012) (p. 1), Los Angeles/USA, Austria. (reposiTUm)

28.   Weinbub, J., Rupp, K., Filipovic, L., Makarov, A., Selberherr, S. (2012).
Towards a Free Open Source Process and Device Simulation Framework.
In 2012 15th International Workshop on Computational Electronics. https://doi.org/10.1109/iwce.2012.6242867 (reposiTUm)

27.   Makarov, A., Sverdlov, V., Osintsev, D., Selberherr, S. (2011).
About the Switching Process in Magnetic Tunnel Junctions With Two Fixed Layers and One Soft Magnetic Layer.
In Abstracts Book of The 20th International Conference on Soft Magnetic Materials (p. 444), Turin, Italy. (reposiTUm)

26.   Osintsev, D., Makarov, A., Selberherr, S., Sverdlov, V. (2011).
An InAs-Based Spin Field-Effect Transistor: A Path to Room Temperature Operation.
In Abstracts International Symposium on Advanced Nanostructures and Nano-Devices (ISANN) (p. 2), Kaanapali,Hawaii, USA. (reposiTUm)

25.   Osintsev, D., Sverdlov, V., Stanojevic, Z., Makarov, A., Selberherr, S. (2011).
Ballistic Spin Field-Effect Transistors Built on Silicon Fins.
In Conference Proceedings of the VII Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits (pp. 59–60), Granada, Austria. (reposiTUm)

24.   Osintsev, D., Sverdlov, V., Makarov, A., Selberherr, S. (2011).
Ballistic Transport Properties of Spin Field-Effect Transistors Built on Silicon and InAs Fins.
In ECS Transactions (pp. 155–162), Ouro Preto. https://doi.org/10.1149/1.3615189 (reposiTUm)

23.   Osintsev, D., Sverdlov, V., Makarov, A., Selberherr, S. (2011).
Ballistic Transport in Spin Field-Effect Transistors Built on Si and InAs.
In Proceedings of International School and Conference on Spintronics and Quantum Information Technology (p. 229), Matsue, Japan. (reposiTUm)

22.   Osintsev, D., Sverdlov, V., Makarov, A., Selberherr, S. (2011).
Ballistic Transport in Spin Field-Effect Transistors Built on Silicon.
In Abstracts of Advanced Workshop on Spin and Charge Properties of Low Dimensional Systems (p. 1), Brasov, Romania. (reposiTUm)

21.   Makarov, A., Sverdlov, V., Osintsev, D., Selberherr, S. (2011).
Fast Switching in Magnetic Tunnel Junctions With Double Barrier Layer.
In Extended Abstracts of 2011 International Conference on Solid State Devices and Materials (p. 2), Nagoya, Japan. (reposiTUm)

20.   Makarov, A., Sverdlov, V., Osintsev, D., Selberherr, S. (2011).
Micromagnetic Modeling of Penta-Layer Magnetic Tunnel Junctions With a Composite Soft Layer.
In Abstracts of Advanced Workshop on Spin and Charge Properties of Low Dimensional Systems (p. 1), Brasov, Romania. (reposiTUm)

19.   Makarov, A., Sverdlov, V., Kryzhanovsky, D., Girkin, M., Selberherr, S. (2011).
Modeling of Non-Volatile Memory Cells of RRAM Type on High Performance Computer Systems With the Monte-Carlo Method.
In Book of Abstracts: Parallel Computing Technologies (PaVT) (p. 1), Moscow, Russia. (reposiTUm)

18.   Makarov, A., Selberherr, S., Sverdlov, V. (2011).
Modeling of Advanced Memories.
In 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, Hong Kong, Austria. https://doi.org/10.1109/edssc.2011.6117568 (reposiTUm)

17.   Makarov, A., Sverdlov, V., Osintsev, D., Weinbub, J., Selberherr, S. (2011).
Modeling of the Advanced Spin Transfer Torque Memory: Macro- And Micromagnetic Simulations.
In Proceedings of the 25th European Simulation and Modelling Conference (pp. 177–181), Guimaraes, Portugal. (reposiTUm)

16.   Makarov, A., Sverdlov, V., Osintsev, D., Selberherr, S. (2011).
Modeling of the Switching Process in Multi-Layered Magnetic Tunnel Junctions.
In Proceedings of International School and Conference on Spintronics and Quantum Information Technology (p. 238), Matsue, Japan. (reposiTUm)

15.   Makarov, A., Sverdlov, V., Osintsev, D., Selberherr, S. (2011).
Optimization of the Penta-Layer Magnetic Tunnel Junction for Fast STTRAM Switching.
In Abstracts International Symposium on Advanced Nanostructures and Nano-Devices (ISANN) (p. 2), Kaanapali,Hawaii, USA. (reposiTUm)

14.   Osintsev, D., Sverdlov, V., Makarov, A., Selberherr, S. (2011).
Properties of InAs- And Silicon-Based Ballistic Spin Field-Effect Transistors Operated at Elevated Temperature.
In Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011) (p. 2), College Park, MD, USA. (reposiTUm)

13.   Osintsev, D., Sverdlov, V., Makarov, A., Selberherr, S. (2011).
Properties of InAs- And Silicon-Based Ballistic Spin Field-Effect Transistors.
In 2011 International Conference on Simulation of Semiconductor Processes and Devices, Osaka, Japan. https://doi.org/10.1109/sispad.2011.6035049 (reposiTUm)

12.   Osintsev, D., Sverdlov, V., Stanojevic, Z., Makarov, A., Weinbub, J., Selberherr, S. (2011).
Properties of Silicon Ballistic Spin Fin-Based Field-Effect Transistors.
In Meeting Abstracts (p. 1), Honolulu, Austria. (reposiTUm)

11.   Makarov, A., Sverdlov, V., Osintsev, D., Selberherr, S. (2011).
Switching Time and Current Reduction Using a Composite Free Layer in Magnetic Tunnel Junctions.
In Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011) (p. 2), College Park, MD, USA. (reposiTUm)

10.   Osintsev, D., Makarov, A., Sverdlov, V., Selberherr, S. (2011).
Transport Modeling in Spin Field-Effect Transistors Built on Silicon Fins.
In Abstracts Intl. Conf. on Large-Scale Scientific Computations (p. 64), Sozopol, Bulgaria. (reposiTUm)

9.   Osintsev, D., Sverdlov, V., Stanojevic, Z., Makarov, A., Selberherr, S. (2011).
Transport Properties of Spin Field-Effect Transistors Built on Si and InAs.
In Ulis 2011 Ultimate Integration on Silicon, Bologna, Austria. https://doi.org/10.1109/ulis.2011.5757998 (reposiTUm)

8.   Makarov, A., Sverdlov, V., Selberherr, S. (2010).
A Monte Carlo Simulation of Reproducible Hysteresis in RRAM.
In 2010 14th International Workshop on Computational Electronics, Urbana-Champaign, IL, USA. https://doi.org/10.1109/iwce.2010.5677934 (reposiTUm)

7.   Makarov, A., Sverdlov, V., Selberherr, S. (2010).
A Stochastic Model of Bipolar Resistive Switching in Metal-Oxide-Based Memory.
In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 396–399), Montreux, Austria. (reposiTUm)

6.   Makarov, A., Weinbub, J., Sverdlov, V., Selberherr, S. (2010).
First-Principles Modeling of Bipolar Resistive Switching in Metal-Oxide Based Memory.
In Proceedings of the European Simulation and Modelling Conference (ESM) (pp. 181–186), Malta. (reposiTUm)

5.   Makarov, A., Sverdlov, V., Selberherr, S. (2010).
Modeling of Resistive Switching in RRAM Using Monte Carlo Simulations.
In Book of Abstracts (p. 141), Catania. (reposiTUm)

4.   Makarov, A., Sverdlov, V., Selberherr, S. (2010).
Modelling of the SET and RESET Process in Bipolar Resistive Oxide-Based Memory Using Monte Carlo Simulations.
In Abstracts of the International Conference on Numerical Methods and Applications (NM&A) (p. B-39), Borovets. (reposiTUm)

3.   Makarov, A., Sverdlov, V., Selberherr, S. (2010).
Monte Carlo Simulation of Bipolar Resistive Switching Memories.
In Proceedings of the Nanoelectronics Days 2010 (p. 22), Aachen. (reposiTUm)

2.   Makarov, A., Sverdlov, V., Selberherr, S. (2010).
Stochastic Modeling of the Resistive Switching Mechanism in Oxide-Based Memory.
In Proceedings of the 17th International Symposium on the Physics, Failure Analysis of Integrated Circuits (pp. 309–312), Singapore. (reposiTUm)

1.   Makarov, A., Sverdlov, V., Selberherr, S. (2010).
Stochastic Modeling Hysteresis and Resistive Switching in Bipolar Oxide-Based Memory.
In 2010 International Conference on Simulation of Semiconductor Processes and Devices, Bologna, Italy. https://doi.org/10.1109/sispad.2010.5604517 (reposiTUm)

Doctor's Theses (authored and supervised)