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Publications Rainer Minixhofer

26 records

Publications in Scientific Journals

6.  M. Waltl, D. Waldhör, K. Tselios, B. Stampfer, C. Schleich, G. Rzepa, H. Enichlmair, E. Ioannidis, R. Minixhofer, T. Grasser:
"Impact of Single-Defects on the Variability of CMOS Inverter Circuits";
Microelectronics Reliability, 126 (2021), 114275-1 - 114275-6. https://doi.org/10.1016/j.microrel.2021.114275

5.  E. Baer, P. Evanschitzky, J. Lorenz, F. Roger, R. Minixhofer, L. Filipovic, R. Orio, S. Selberherr:
"Coupled Simulation to Determine the Impact of Across Wafer Variations in Oxide PECVD on Electrical and Reliability Parameters of Through-Silicon Vias";
Microelectronic Engineering, 137 (2015), 141 - 145. https://doi.org/10.1016/j.mee.2014.11.014

4.  P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, K. Rupp, M. Bina, H. Enichlmair, J.M. Park, R. Minixhofer, H. Ceric, T. Grasser:
"Modeling of Hot-Carrier Degradation in nLDMOS Devices: Different Approaches to the Solution of the Boltzmann Transport Equation";
IEEE Transactions on Electron Devices, 62 (2015), 6; 1811 - 1818. https://doi.org/10.1109/TED.2015.2421282

3.  S. E. Tyaginov, I. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser:
"Interface Traps Density-of-States as a Vital Component for Hot-Carrier Degradation Modeling";
Microelectronics Reliability, 50 (2010), 1267 - 1272. https://doi.org/10.1016/j.microrel.2010.0

2.  R. Entner, T. Grasser, O. Triebl, H. Enichlmair, R. Minixhofer:
"Negative Bias Temperature Instability Modeling for High-Voltage Oxides at Different Stress Temperatures";
Microelectronics Reliability, 47 (2007), 4-5; 697 - 699.

1.  S. Holzer, R. Minixhofer, C. Heitzinger, J. Fellner, T. Grasser, S. Selberherr:
"Extraction of Material Parameters Based on Inverse Modeling of Three-Dimensional Interconnect Fusing Structures";
Microelectronics Journal, 35 (2004), 10; 805 - 810. https://doi.org/10.1016/j.mejo.2004.06.011

Talks and Poster Presentations (with Proceedings-Entry)

19.  J. Michl, A. Grill, D. Waldhör, C. Schleich, T. Knobloch, E. Ioannidis, H. Enichlmair, R. Minixhofer, B. Kaczer, B. Parvais, B. Govoreanu, I. Radu, T. Grasser, M. Waltl:
"Evidence of Tunneling Driven Random Telegraph Noise in Cryo-CMOS";
Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, USA; 2021-12-11 - 2021-12-15; in: "2021 IEEE International Electron Devices Meeting (IEDM)", (2021), 31.3.1 - 31.3.3. https://doi.org/10.1109/IEDM19574.2021.9720501

18.  E. Baer, P. Evanschitzky, J. Lorenz, F. Roger, R. Minixhofer, L. Filipovic, R. Orio, S. Selberherr:
"Coupled Simulation to Determine Across Wafer Variations for Electrical and Reliability Parameters of Through-Silicon VIAs";
Talk: European Workshop on Materials for Advanced Metallization (MAM), Chemnitz, Germany; 2014-03-02 - 2014-03-05; in: "Book of Abstracts", (2014), 2 pages.

17.  L. Filipovic, R. Orio, S. Selberherr, A. P. Singulani, F. Roger, R. Minixhofer:
"Effects of Sidewall Scallops on Open Tungsten TSVs";
Talk: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 2014-06-01 - 2014-06-05; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2014), ISBN: 978-1-4799-3317-4; 3E.3.1 - 3E.3.6. https://doi.org/10.1109/IRPS.2014.6860633

16.  Y. Wimmer, S. E. Tyaginov, F. Rudolf, K. Rupp, M. Bina, H. Enichlmair, J.M. Park, R. Minixhofer, H. Ceric, T. Grasser:
"Physical Modeling of Hot-Carrier Degradation in nLDMOS Transistors";
Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2014-10-12 - 2014-10-16; in: "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", IEEE, (2014), ISBN: 978-1-4799-7308-8; 58 - 62. https://doi.org/10.1109/IIRW.2014.7049511

15.  L. Filipovic, F. Rudolf, E. Baer, P. Evanschitzky, J. Lorenz, F. Roger, A. P. Singulani, R. Minixhofer, S. Selberherr:
"Three-Dimensional Simulation for the Reliability and Electrical Performance of Through-Silicon Vias";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4; 341 - 344. https://doi.org/10.1109/SISPAD.2014.6931633

14.  I. Starkov, S. E. Tyaginov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser:
"Analysis of Worst-Case Hot-Carrier Conditions for High Voltage Transistors Based on Full-Band Monte-Carlo Simulations";
Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2010-07-05 - 2010-07-09; in: "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9; 139 - 144.

13.  S. E. Tyaginov, I. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser:
"Hot-Carrier Degradation Modeling Using Full-Band Monte-Carlo Simulations";
Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2010-07-05 - 2010-07-09; in: "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9; 341 - 345.

12.  S. E. Tyaginov, I. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser:
"Interface Traps Density-of-States as a Vital Component for Hot-Carrier Degradation Modeling";
Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Montecassino Abbey and Gaeta; 2010-10-11 - 2010-10-15; in: "Proceedings of the 21st European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2010), 3 pages.

11.  R. Entner, T. Grasser, H. Enichlmair, R. Minixhofer:
"Influence of Interface and Oxide Traps on Negative Bias Temperature Instability";
Poster: Silicon Nanoelectronics Workshop, Honolulu; 2006-06-11 - 2006-06-12; in: "Abstracts IEEE 2006 Silicon Nanoelectronics Workshop", (2006), 163 - 164.

10.  R. Entner, T. Grasser, H. Enichlmair, R. Minixhofer:
"Investigation of NBTI Recovery During Measurement";
Talk: Materials Research Society Spring Meeting (MRS), San Francisco; 2006-04-17 - 2006-04-21; in: "San Francisco 2006 MRS Meeting Abstracts", (2006), 110 - 111.

9.  P. Schwaha, R. Heinzl, W. Brezna, J. Smoliner, H. Enichlmair, R. Minixhofer, T. Grasser:
"Leakage Current Analysis of a Real World Silicon-Silicon Dioxide Capacitance";
Talk: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Playa del Carmen; 2006-04-26 - 2006-04-28; in: "Proceedings International Caribbean Conference on Devices, Circuits and Systems", (2006), ISBN: 1-4244-0042-2; 365 - 370.

8.  R. Entner, T. Grasser, H. Enichlmair, R. Minixhofer:
"Negative Bias Temperature Instability Modeling for High-Voltage Oxides at Different Stress Temperatures";
Talk: Workshop on Dielectrics in Microelectronics (WODIM), Catania; 2006-06-26 - 2006-06-28; in: "WODIM 2006 14th Workshop on Dielectrics in Microelectronics Workshop Programme and Abstracts", (2006), 96 - 97.

7.  P. Schwaha, R. Heinzl, W. Brezna, J. Smoliner, H. Enichlmair, R. Minixhofer, T. Grasser:
"Fully Three-Dimensional Analysis of Leakage Current in Non-Planar Oxides";
Talk: European Simulation and Modeling Conference (ESMC), Porto; 2005-10-24 - 2005-10-26; in: "The 2005 European Simulation and Modelling Conference Proceedings", (2005), ISBN: 90-77381-22-8; 469 - 473.

6.  A. Hössinger, R. Minixhofer, S. Selberherr:
"Full Three-Dimensional Analysis of a Non-Volatile Memory Cell";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", Springer, (2004), ISBN: 3211224688; 129 - 132. https://doi.org/10.1007/978-3-7091-0624-2_31

5.  J. Cervenka, A. Hössinger, R. Minixhofer, T. Grasser, S. Selberherr:
"Dreidimensionale Modellierung Elektronischer Bauteile";
Poster: Informationstagung Mikroelektronik (ME), Wien; 2003-10-01 - 2003-10-02; in: "Beiträge der Informationstagung Mikroelektronik 2003", (2003), ISBN: 3-85133-030-7; 377 - 382.

4.  S. Holzer, R. Minixhofer, C. Heitzinger, J. Fellner, T. Grasser, S. Selberherr:
"Extraction of Material Parameters Based on Inverse Modeling of Three-Dimensional Interconnect Structures";
Talk: Workshop on Thermal Investigations of ICs and Systems (THERMINIC), Aix-en-Provence; 2003-09-24 - 2003-09-26; in: "International Workshop on Thermal Investigations of ICs and Systems", (2003), ISBN: 2-848-130202; 263 - 268.

3.  R. Minixhofer, S. Holzer, C. Heitzinger, J. Fellner, T. Grasser, S. Selberherr:
"Optimization of Electrothermal Material Parameters Using Inverse Modeling";
Talk: European Solid-State Device Research Conference (ESSDERC), Estoril; 2003-09-16 - 2003-09-18; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2003), ISBN: 0-7803-7999-3; 363 - 366.

2.  R. Minixhofer, G. Röhrer, S. Selberherr:
"Implementation of an Automated Interface for Integration of TCAD with Semiconductor Fabrication";
Talk: European Simulation Symposium (ESS), Dresden; 2002-10-23 - 2002-10-26; in: "Proceedings European Simulation Symposium", (2002), ISBN: 3-936150-22-2; 70 - 74.

1.  C. Harlander, R. Sabelka, R. Minixhofer, S. Selberherr:
"Three-Dimensional Transient Electro-Thermal Simulation";
Talk: Workshop on Thermal Investigations of ICs and Systems (THERMINIC), Rome; 1999-10-03 - 1999-10-06; in: "Proceedings THERMINIC Workshop", (1999), 169 - 172.

Doctor's Theses (authored and supervised)

1.  R. Minixhofer:
"Integration Technology Simulation into the Semiconductor Manufacturing Environment";
Supervisor, Reviewer: S. Selberherr, W. Pribyl; Institut für Mikroelektronik, 2006; oral examination: 2006-03-31. https://doi.org/10.34726/hss.2006.5439