Publications R. Minixhofer
26 records
| 6. | M. Waltl, D. Waldhör, K. Tselios, B. Stampfer, C. Schleich, G. Rzepa, H. Enichlmair, E. Ioannidis, R. Minixhofer, T. Grasser: "Impact of Single-Defects on the Variability of CMOS Inverter Circuits"; Microelectronics Reliability, 126, (2021), 114275-1 - 114275-6 doi:10.1016/j.microrel.2021.114275. BibTeX |
| 5. | E. Baer, P. Evanschitzky, J. Lorenz, F. Roger, R. Minixhofer, L. Filipovic, R. Orio, S. Selberherr: "Coupled Simulation to Determine the Impact of Across Wafer Variations in Oxide PECVD on Electrical and Reliability Parameters of Through-Silicon Vias"; Microelectronic Engineering, 137, (2015), 141 - 145 doi:10.1016/j.mee.2014.11.014. BibTeX |
| 4. | P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, K. Rupp, M. Bina, H. Enichlmair, J.M. Park, R. Minixhofer, H. Ceric, T. Grasser: "Modeling of Hot-Carrier Degradation in nLDMOS Devices: Different Approaches to the Solution of the Boltzmann Transport Equation"; IEEE Transactions on Electron Devices, 62, (2015), 1811 - 1818 doi:10.1109/TED.2015.2421282. BibTeX |
| 3. | S. E. Tyaginov, I. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser: "Interface Traps Density-of-States as a Vital Component for Hot-Carrier Degradation Modeling"; Microelectronics Reliability, 50, (2010), 1267 - 1272 doi:10.1016/j.microrel.2010.0. BibTeX |
| 2. | R. Entner, T. Grasser, O. Triebl, H. Enichlmair, R. Minixhofer: "Negative Bias Temperature Instability Modeling for High-Voltage Oxides at Different Stress Temperatures"; Microelectronics Reliability, 47, (2007), 697 - 699. BibTeX |
| 1. | S. Holzer, R. Minixhofer, C. Heitzinger, J. Fellner, T. Grasser, S. Selberherr: "Extraction of Material Parameters Based on Inverse Modeling of Three-Dimensional Interconnect Fusing Structures"; Microelectronics Journal, 35, (2004), 805 - 810 doi:10.1016/j.mejo.2004.06.011. BibTeX |
| 19. | J. Michl, A. Grill, D. Waldhör, C. Schleich, T. Knobloch, E. Ioannidis, H. Enichlmair, R. Minixhofer, B. Kaczer, B. Parvais, B. Govoreanu, I. Radu, T. Grasser, M. Waltl: "Evidence of Tunneling Driven Random Telegraph Noise in Cryo-CMOS"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, USA; 2021-12-11 - 2021-12-15; in "2021 IEEE International Electron Devices Meeting (IEDM)", (2021), 31.3.1 - 31.3.3 doi:10.1109/IEDM19574.2021.9720501. BibTeX |
| 18. | Y. Wimmer, S. E. Tyaginov, F. Rudolf, K. Rupp, M. Bina, H. Enichlmair, J.M. Park, R. Minixhofer, H. Ceric, T. Grasser: "Physical Modeling of Hot-Carrier Degradation in nLDMOS Transistors"; Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2014-10-12 - 2014-10-16; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2014), ISBN: 978-1-4799-7308-8, 58 - 62 doi:10.1109/IIRW.2014.7049511. BibTeX |
| 17. | L. Filipovic, F. Rudolf, E. Baer, P. Evanschitzky, J. Lorenz, F. Roger, A. P. Singulani, R. Minixhofer, S. Selberherr: "Three-Dimensional Simulation for the Reliability and Electrical Performance of Through-Silicon Vias"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 2014-09-09 - 2014-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 341 - 344 doi:10.1109/SISPAD.2014.6931633. BibTeX |
| 16. | L. Filipovic, R. Orio, S. Selberherr, A. P. Singulani, F. Roger, R. Minixhofer: "Effects of Sidewall Scallops on Open Tungsten TSVs"; Talk: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 2014-06-01 - 2014-06-05; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2014), ISBN: 978-1-4799-3317-4, 3E.3.1 - 3E.3.6 doi:10.1109/IRPS.2014.6860633. BibTeX |
| 15. | E. Baer, P. Evanschitzky, J. Lorenz, F. Roger, R. Minixhofer, L. Filipovic, R. Orio, S. Selberherr: "Coupled Simulation to Determine Across Wafer Variations for Electrical and Reliability Parameters of Through-Silicon VIAs"; Talk: European Workshop on Materials for Advanced Metallization (MAM), Chemnitz, Germany; 2014-03-02 - 2014-03-05; in "Book of Abstracts", (2014), 2 page(s) . BibTeX |
| 14. | S. E. Tyaginov, I. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser: "Interface Traps Density-of-States as a Vital Component for Hot-Carrier Degradation Modeling"; Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Montecassino Abbey and Gaeta; 2010-10-11 - 2010-10-15; in "Proceedings of the 21st European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2010), 3 page(s) . BibTeX |
| 13. | I. Starkov, S. E. Tyaginov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser: "Analysis of Worst-Case Hot-Carrier Conditions for High Voltage Transistors Based on Full-Band Monte-Carlo Simulations"; Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2010-07-05 - 2010-07-09; in "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9, 139 - 144. BibTeX |
| 12. | S. E. Tyaginov, I. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser: "Hot-Carrier Degradation Modeling Using Full-Band Monte-Carlo Simulations"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2010-07-05 - 2010-07-09; in "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9, 341 - 345. BibTeX |
| 11. | R. Entner, T. Grasser, H. Enichlmair, R. Minixhofer: "Negative Bias Temperature Instability Modeling for High-Voltage Oxides at Different Stress Temperatures"; Talk: Workshop on Dielectrics in Microelectronics (WODIM), Catania; 2006-06-26 - 2006-06-28; in "WODIM 2006 14th Workshop on Dielectrics in Microelectronics Workshop Programme and Abstracts", (2006), 96 - 97. BibTeX |
| 10. | R. Entner, T. Grasser, H. Enichlmair, R. Minixhofer: "Influence of Interface and Oxide Traps on Negative Bias Temperature Instability"; Poster: Silicon Nanoelectronics Workshop, Honolulu; 2006-06-11 - 2006-06-12; in "Abstracts IEEE 2006 Silicon Nanoelectronics Workshop", (2006), 163 - 164. BibTeX |
| 9. | P. Schwaha, R. Heinzl, W. Brezna, J. Smoliner, H. Enichlmair, R. Minixhofer, T. Grasser: "Leakage Current Analysis of a Real World Silicon-Silicon Dioxide Capacitance"; Talk: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Playa del Carmen; 2006-04-26 - 2006-04-28; in "Proceedings International Caribbean Conference on Devices, Circuits and Systems", (2006), ISBN: 1-4244-0042-2, 365 - 370. BibTeX |
| 8. | R. Entner, T. Grasser, H. Enichlmair, R. Minixhofer: "Investigation of NBTI Recovery During Measurement"; Talk: Materials Research Society Spring Meeting (MRS), San Francisco; 2006-04-17 - 2006-04-21; in "San Francisco 2006 MRS Meeting Abstracts", (2006), 110 - 111. BibTeX |
| 7. | P. Schwaha, R. Heinzl, W. Brezna, J. Smoliner, H. Enichlmair, R. Minixhofer, T. Grasser: "Fully Three-Dimensional Analysis of Leakage Current in Non-Planar Oxides"; Talk: European Simulation and Modeling Conference (ESMC), Porto; 2005-10-24 - 2005-10-26; in "The 2005 European Simulation and Modelling Conference Proceedings", (2005), ISBN: 90-77381-22-8, 469 - 473. BibTeX |
| 6. | A. Hössinger, R. Minixhofer, S. Selberherr: "Full Three-Dimensional Analysis of a Non-Volatile Memory Cell"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 2004-09-02 - 2004-09-04; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2004), ISBN: 3211224688, 129 - 132 doi:10.1007/978-3-7091-0624-2_31. BibTeX |
| 5. | J. Cervenka, A. Hössinger, R. Minixhofer, T. Grasser, S. Selberherr: "Dreidimensionale Modellierung Elektronischer Bauteile"; Poster: Informationstagung Mikroelektronik (ME), Wien; 2003-10-01 - 2003-10-02; in "Beiträge der Informationstagung Mikroelektronik 2003", (2003), ISBN: 3-85133-030-7, 377 - 382. BibTeX |
| 4. | S. Holzer, R. Minixhofer, C. Heitzinger, J. Fellner, T. Grasser, S. Selberherr: "Extraction of Material Parameters Based on Inverse Modeling of Three-Dimensional Interconnect Structures"; Talk: Workshop on Thermal Investigations of ICs and Systems (THERMINIC), Aix-en-Provence; 2003-09-24 - 2003-09-26; in "International Workshop on Thermal Investigations of ICs and Systems", (2003), ISBN: 2-848-130202, 263 - 268. BibTeX |
| 3. | R. Minixhofer, S. Holzer, C. Heitzinger, J. Fellner, T. Grasser, S. Selberherr: "Optimization of Electrothermal Material Parameters Using Inverse Modeling"; Talk: European Solid-State Device Research Conference (ESSDERC), Estoril; 2003-09-16 - 2003-09-18; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2003), ISBN: 0-7803-7999-3, 363 - 366. BibTeX |
| 2. | R. Minixhofer, G. Röhrer, S. Selberherr: "Implementation of an Automated Interface for Integration of TCAD with Semiconductor Fabrication"; Talk: European Simulation Symposium (ESS), Dresden; 2002-10-23 - 2002-10-26; in "Proceedings European Simulation Symposium", (2002), ISBN: 3-936150-22-2, 70 - 74. BibTeX |
| 1. | C. Harlander, R. Sabelka, R. Minixhofer, S. Selberherr: "Three-Dimensional Transient Electro-Thermal Simulation"; Talk: Workshop on Thermal Investigations of ICs and Systems (THERMINIC), Rome; 1999-10-03 - 1999-10-06; in "Proceedings THERMINIC Workshop", (1999), 169 - 172. BibTeX |
| 1. | R. Minixhofer: "Integration Technology Simulation into the Semiconductor Manufacturing Environment"; Reviewer: S. Selberherr, W. Pribyl; Institut für Mikroelektronik, 2006, oral examination: 2006-03-31 doi:10.34726/hss.2006.5439. BibTeX |