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Publications Roberto Lacerda de Orio

131 records

Publications in Scientific Journals

25.  J. Ender, S. Fiorentini, R. Orio, T. Hadámek, M. Bendra, W. Goes, S. Selberherr, V. Sverdlov:
"Advances in Modeling Emerging Magnetoresistive Random Access Memories: From Finite Element Methods to Machine Learning Approaches";
Proceedings of SPIE (invited), 12157 (2022), 1215708-1 - 1215708-14. https://doi.org/10.1117/12.2624595

24.  T. Hadámek, S. Fiorentini, M. Bendra, J. Ender, R. Orio, W. Goes, S. Selberherr, V. Sverdlov:
"Temperature Increase in STT-MRAM at Writing: A Fully Three-Dimensional Finite Element Approach";
Solid-State Electronics (invited), 193 (2022), 108269-1 - 108269-7. https://doi.org/10.1016/j.sse.2022.108269

23.  S. Fiorentini, J. Ender, S. Selberherr, R. Orio, W. Goes, V. Sverdlov:
"Coupled Spin and Charge Drift-Diffusion Approach Applied to Magnetic Tunnel Junctions";
Solid-State Electronics (invited), 186 (2021), 108103. https://doi.org/10.1016/j.sse.2021.108103

22.  J. Ender, S. Fiorentini, R. Orio, W. Goes, V. Sverdlov, S. Selberherr:
"Emerging CMOS Compatible Magnetic Memories and Logic";
IEEE Journal of the Electron Devices Society (invited), 9 (2021), 456 - 463. https://doi.org/10.1109/JEDS.2021.3066679

21.  J. Ender, R. Orio, S. Fiorentini, S. Selberherr, W. Goes, V. Sverdlov:
"Improving Failure Rates in Pulsed SOT-MRAM Switching by Reinforcement Learning";
Microelectronics Reliability, 126 (2021), 114231-1 - 114231-5. https://doi.org/10.1016/j.microrel.2021.114231

20.  R. Orio, J. Ender, S. Fiorentini, W. Gös, S. Selberherr, V. Sverdlov:
"Numerical Analysis of Deterministic Switching of a Perpendicularly Magnetized Spin-Orbit Torque Memory Cell";
IEEE Journal of the Electron Devices Society, 9 (2021), 61 - 67. https://doi.org/10.1109/JEDS.2020.3039544

19.  R. Orio, J. Ender, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov:
"Optimization of a Spin-Orbit Torque Switching Scheme Based on Micromagnetic Simulations and Reinforcement Learning";
Micromachines, 12 (2021), 4; 443. https://doi.org/10.3390/mi12040443

18.  J. Ender, R. Orio, S. Fiorentini, S. Selberherr, W. Goes, V. Sverdlov:
"Reinforcement Learning Approach for Deterministic SOT-MRAM Switching";
Proceedings of SPIE (invited), 11805 (2021), 1180519-1 - 1180519-8. https://doi.org/10.1117/12.2593937

17.  H. Ceric, S. Selberherr, H. Zahedmanesh, R. Orio, K. Croes:
"Review - Modeling Methods for Analysis of Electromigration Degradation in Nano-Interconnects";
ECS Journal of Solid State Science and Technology, 10 (2021), 3; 035003-1 - 035003-11. https://doi.org/10.1149/2162-8777/abe7a9

16.  R. Orio, J. Ender, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov:
"Two-Pulse Switching Scheme and Reinforcement Learning for Energy Efficient SOT-MRAM Simulations";
Solid-State Electronics (invited), 185 (2021), 108075. https://doi.org/10.1016/j.sse.2021.108075

15.  S. Fiorentini, R. Orio, S. Selberherr, J. Ender, W. Goes, V. Sverdlov:
"Analysis of Switching Under Fixed Voltage and Fixed Current in Perpendicular STT-MRAM";
IEEE Journal of the Electron Devices Society (invited), 8 (2020), 1249 - 1256. https://doi.org/10.1109/JEDS.2020.3023577

14.  S. Fiorentini, J. Ender, M. Mohamedou, S. Selberherr, R. Orio, W. Goes, V. Sverdlov:
"Comprehensive Modeling of Coupled Spin-Charge Transport and Magnetization Dynamics in STT-MRAM Cells";
Proceedings of SPIE (invited), 11470 (2020), 50 - 56. https://doi.org/10.1117/12.2567480

13.  R. Orio, A. Makarov, S. Selberherr, W. Goes, J. Ender, S. Fiorentini, V. Sverdlov:
"Robust Magnetic Field-Free Switching of a Perpendicularly Magnetized Free Layer for SOT-MRAM";
Solid-State Electronics, 168 (2020), 107730-1 - 107730-7. https://doi.org/10.1016/j.sse.2019.107730

12.  R. Orio, A. Makarov, W. Goes, J. Ender, S. Fiorentini, V. Sverdlov:
"Two-Pulse Magnetic Field-Free Switching Scheme for Perpendicular SOT-MRAM with a Symmetric Square Free Layer";
Physica B: Condensed Matter, 578 (2020), 411743. https://doi.org/10.1016/j.physb.2019.411743

11.  R. Orio, S. Selberherr, V. Sverdlov:
"Magnetic Field-Free Deterministic Switching of a Perpendicular Magnetic Layer by Spin-Orbit Torques";
Proceedings of SPIE (invited), 11090 (2019), 110903F-1 - 110903F-6. https://doi.org/10.1117/12.2529119

10.  E. Baer, P. Evanschitzky, J. Lorenz, F. Roger, R. Minixhofer, L. Filipovic, R. Orio, S. Selberherr:
"Coupled Simulation to Determine the Impact of Across Wafer Variations in Oxide PECVD on Electrical and Reliability Parameters of Through-Silicon Vias";
Microelectronic Engineering, 137 (2015), 141 - 145. https://doi.org/10.1016/j.mee.2014.11.014

9.  H. Ceric, R. Orio, W. H. Zisser, S. Selberherr:
"Microstructural Impact on Electromigration: A TCAD Study";
Facta universitatis - series: Electronics and Energetics, 27 (2014), 1; 1 - 11. https://doi.org/10.2298/FUEE1401001C

8.  R. Orio, H. Ceric, S. Selberherr:
"Electromigration Failure in a Copper Dual-Damascene Structure with a Through Silicon Via";
Microelectronics Reliability, 52 (2012), 1981 - 1986. https://doi.org/10.1016/j.microrel.2012.07.021

7.  H. Ceric, R. Orio, S. Selberherr:
"Interconnect Reliability Dependence on Fast Diffusivity Paths";
Microelectronics Reliability (invited), 52 (2012), 8; 1532 - 1538. https://doi.org/10.1016/j.microrel.2011.09.035

6.  R. Orio, H. Ceric, S. Selberherr:
"A Compact Model for Early Electromigration Failures of Copper Dual-Damascene Interconnects";
Microelectronics Reliability, 51 (2011), 1573 - 1577. https://doi.org/10.1016/j.microrel.2011.07.049

5.  S. E. Tyaginov, I. Starkov, H. Enichlmair, C. Jungemann, J.M. Park, E. Seebacher, R. Orio, H. Ceric, T. Grasser:
"An Analytical Approach for Physical Modeling of Hot-Carrier Induced Degradation";
Microelectronics Reliability, 51 (2011), 1525 - 1529. https://doi.org/10.1016/j.microrel.2011.07.089

4.  R. Orio, H. Ceric, S. Selberherr:
"Physically based Models of Electromigration: From Black´s Equation to Modern TCAD Models";
Microelectronics Reliability (invited), 50 (2010), 6; 775 - 789. https://doi.org/10.1016/j.microrel.2010.01.007

3.  H. Ceric, R. Orio, J. Cervenka, S. Selberherr:
"A Comprehensive TCAD Approach for Assessing Electromigration Reliability of Modern Interconnects";
IEEE Transactions on Device and Materials Reliability, 9 (2009), 1; 9 - 19. https://doi.org/10.1109/TDMR.2008.2000893

2.  R. Orio, H. Ceric, S. Selberherr:
"Analysis of Electromigration in Dual-Damascene Interconnect Structures";
Journal Integrated Circuits and Systems, 4 (2009), 2; 67 - 72. https://doi.org/10.29292/jics.v4i2.300

1.  R. Orio, H. Ceric, S. Selberherr:
"Effect of Strains on Anisotropic Material Transport in Copper Interconnect Structures under Electromigration Stress";
Journal of Computational Electronics, 7 (2008), 3; 128 - 131. https://doi.org/10.1007/s10825-008-0211-9

Contributions to Books

5.  T. Hadámek, M. Bendra, S. Fiorentini, J. Ender, R. Orio, W. Goes, S. Selberherr, V. Sverdlov:
"Temperature Increase in MRAM at Writing: A Finite Element Approach";
in: "Proceedings of the 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", B. Cretu (ed.); IEEE, 2021, ISBN: 978-1-6654-3746-2, 1 - 4. https://doi.org/10.1109/EuroSOI-ULIS53016.2021.9560669

4.  S. Fiorentini, J. Ender, S. Selberherr, R. Orio, W. Goes, V. Sverdlov:
"Comprehensive Modeling of Coupled Spin and Charge Transport through Magnetic Tunnel Junctions";
in: "Proceedings of the 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", B. Cretu (ed.); IEEE, 2020, ISBN: 978-1-7281-8765-5, 1 - 4. https://doi.org/10.1109/EUROSOI-ULIS49407.2020.9365497

3.  S. Fiorentini, R. Orio, S. Selberherr, J. Ender, W. Gös, V. Sverdlov:
"Influence of Current Redistribution in Switching Models for Perpendicular STT-MRAM";
in: "Advanced CMOS-Compatible Semiconductor Devices 19, Vol. 97, No. 5", J. A. Martino, B.-Y. Nguyen, F. Gamiz, H. Ishii, J.-P. Raskin, S. Selberherr, E. Simoen (ed.); issued by: The Electrochemical Society; ECS Transactions, 2020, ISBN: 978-1-62332-604-3, 159 - 164. https://doi.org/10.1149/09705.0159ecst

2.  R. Orio, J. Ender, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov:
"Reduced Current Spin-Orbit Torque Switching of a Perpendicularly Magnetized Free Layer";
in: "Proceedings of the 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", B. Cretu (ed.); IEEE, 2020, ISBN: 978-1-7281-8765-5, 1 - 4. https://doi.org/10.1109/EUROSOI-ULIS49407.2020.9365283

1.  R. Orio, A. Makarov, S. Selberherr, W. Goes, J. Ender, S. Fiorentini, V. Sverdlov:
"Efficient Magnetic Field-Free Switching of a Symmetric Perpendicular Magnetic Free Layer for Advanced SOT-MRAM";
in: "Proceedings of the 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", J. Lacord, M. Bawedin (ed.); IEEE, 2019, ISBN: 978-1-7281-1658-7, 1 - 4. https://doi.org/10.1109/EUROSOI-ULIS45800.2019.9041920

Talks and Poster Presentations (with Proceedings-Entry)

95.  R. Orio, J. Ender, W. Goes, S. Fiorentini, S. Selberherr, V. Sverdlov:
"About the Switching Energy of a Magnetic Tunnel Junction determined by Spin-Orbit Torque and Voltage-Controlled Magnetic Anisotropy";
Talk: 2022 IEEE Latin American Electron Devices Conference (LAEDC), Puebla, Mexico; 2022-06-04 - 2022-06-06; in: "2022 IEEE Latin American Electron Devices Conference (LAEDC)", 978-1-6654-9768-8, (2022), ISBN: 978-1-6654-9768-8; 1 - 4. https://doi.org/10.1109/LAEDC54796.2022.9908222

94.  S. Fiorentini, J. Ender, R. Orio, S. Selberherr, W. Goes, V. Sverdlov:
"Comprehensive Evaluation of Torques in Ultra Scaled MRAM Devices";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022), Granada, Spain; 2022-09-06 - 2022-09-08; in: "SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet", (2022), 11 - 12.

93.  S. Fiorentini, W.J. Loch, M. Bendra, N. Jørstad, J. Ender, R. Orio, T. Hadámek, W. Goes, V. Sverdlov, S. Selberherr:
"Design Analysis of Ultra-Scaled MRAM Cells";
Talk: 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, Nanjing, China (invited); 2022-10-25 - 2022-10-28; in: "Proceedings of 2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)", (2022), ISBN: 978-1-6654-6905-0.

92.  H. Ceric, R. Orio, S. Selberherr:
"Electromigration Degradation of Gold Interconnects: A Statistical Study";
Talk: IEEE International Interconnect Technology Conference (IITC), San Jose, California,; 2022-06-27 - 2022-06-30; in: "2022 IEEE International Interconnect Technology Conference (IITC)", (2022), 102 - 104. https://doi.org/10.1109/IITC52079.2022.9881313

91.  V. Sverdlov, M. Bendra, S. Fiorentini, J. Ender, R. Orio, T. Hadámek, W.J. Loch, N. Jørstad, W. Goes, S. Selberherr:
"Emerging Devices for Digital Spintronics";
Keynote Lecture: 2nd Global Conference & Expo on Nanotechnology & Nanoscience, online (invited); 2022-05-25 - 2022-05-26; in: "2nd Global Conference & Expo on Nanotechnology & Nanoscience", (2022), 32 - 33.

90.  H. Ceric, R. Orio, S. Selberherr:
"Impact of Gold Interconnect Microstructure on Electromigration Failure Time Statistics";
Talk: IEEE European Solid-State Device Research Conference (ESSDERC), Milan, Italy; 2022-09-20 - 2022-09-22; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2022), ISBN: 978-1-6654-8496-1; 301 - 303.

89.  M. Bendra, S. Fiorentini, J. Ender, R. Orio, T. Hadámek, W.J. Loch, N. Jørstad, W. Goes, S. Selberherr:
"Interface Effects in Ultra-Scaled MRAM Cells";
Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Udine, Italy; 2022-05-18 - 2022-05-20; in: "Proceedings of the Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS)", (2022).

88.  H. Ceric, R. Orio, S. Selberherr:
"Microstructural Impact on Electromigration Reliability of Gold Interconnects";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022), Granada, Spain; 2022-09-06 - 2022-09-08; in: "SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet", (2022), 178 - 179.

87.  V. Sverdlov, M. Bendra, S. Fiorentini, J. Ender, R. Orio, T. Hadámek, W.J. Loch, N. Jørstad, S. Selberherr:
"Modeling Advanced Magnetoresistive Memory: A Journey from Finite Element Methods to Machine Learning Approaches";
Keynote Lecture: 2 nd Global Webinar on Nanoscience & Nanotechnology, online (invited); 2022-03-14 - 2022-03-15; in: "2nd Global Webinar on Nanoscience & Nanotechnology", (2022).

86.  V. Sverdlov, M. Bendra, S. Fiorentini, J. Ender, R. Orio, T. Hadámek, W.J. Loch, N. Jørstad, W. Goes, S. Selberherr:
"Modeling Advanced Spintronic Based Magnetoresistive Memory";
Talk: International Conference on Microwave & THz Technologies, Wireless Communications and OptoElectronics (IRPhE 2022), Yerevan, Armenia (invited); 2022-09-27 - 2022-09-29; in: "Book of Abstracts of the International Conference on Microwave & THz Technologies and Optoelectronics (IRPhE)", (2022).

85.  V. Sverdlov, W. Loch, M. Bendra, S. Fiorentini, J. Ender, R. Orio, T. Hadámek, N. Jorstad, W. Goes, S. Selberherr:
"Modeling Approach to Ultra-Scaled MRAM Cells";
Talk: ASETMEET2022 International Meet On Applied Science, Engineering and Technology, Taastrup, Copenhagen (invited); 2022-06-23 - 2022-06-25; in: "Book of Abstracts of the International Meet On Applied Science, Engineering and Technology (ASETMEET)", (2022), 7 - 8.

84.  S. Fiorentini, M. Bendra, J. Ender, R. Orio, W. Goes, S. Selberherr, V. Sverdlov:
"Spin Torques in ULTRA-Scaled MRAM Devices";
Talk: IEEE European Solid-State Device Research Conference (ESSDERC), Mailand; 2022-09-20 - 2022-09-22; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2022), ISBN: 978-1-6654-8496-1; 348 - 351.

83.  M. Bendra, S. Fiorentini, J. Ender, R. Orio, T. Hadámek, W.J. Loch, N. Jørstad, S. Selberherr, W. Goes, V. Sverdlov:
"Spin Transfer Torques in Ultra-Scaled MRAM Cells";
Talk: MIPRO 2022, Opatija, Croatia; 2022-05-23 - 2022-05-27; in: "2022 45th Jubilee International Convention on Information, Communication and Electronic Technology (MIPRO)", (2022), ISBN: 978-953-233-103-5; 129 - 132.

82.  T. Hadámek, S. Fiorentini, M. Bendra, R. Orio, W.J. Loch, N. Jorstad, S. Selberherr, W. Goes, V. Sverdlov:
"Temperature Modeling in STT-MRAM:A Fully Three-Dimensional Finite Element Approach";
Talk: 16th International Conference on Nanostructured Materials, Sevilla, Spain; 2022-06-06 - 2022-06-10; in: "Book of Abstracts of the International Conference on Nanostructured Materials (NANO)", (2022).

81.  J. Ender, S. Fiorentini, R. Orio, T. Hadámek, M. Bendra, W. Goes, S. Selberherr, V. Sverdlov:
"Advanced Modeling of Emerging MRAM: From Finite Element Methods to Machine Learning Approaches";
Talk: International Conference Micro- and Nanoelectronics (ICMNE), Moscow-Zvenigorod, Russia (invited); 2021-10-04 - 2021-10-08; in: "Proceedings of the International Conference Micro- and Nanoelectronics (ICMNE)", (2021), ISBN: 978-5-317-06675-8.

80.  S. Fiorentini, M. Bendra, J. Ender, R. Orio, S. Selberherr, W. Goes, V. Sverdlov:
"Design Support for Ultra-Scaled MRAM Cells";
Poster: IEEE International Electron Devices Meeting (IEDM), San Francisco, USA; 2021-12-13 - 2021-12-15; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM) Special Poster Session Dedicated to MRAM", (2021), 1 pages.

79.  R. Orio, J. Ender, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov:
"Deterministic Spin-Orbit Switching Scheme for an Array of Perpendicular MRAM Cells Suitable for Large Scale Integration";
Talk: Trends in Magnetism (TMAG), Cefalù, Italy; 2021-09-06 - 2021-09-10; in: "Proceedings of the Trends in Magnetism Conference (TMAG)", (2021).

78.  J. Ender, R. Orio, V. Sverdlov:
"Enhancing SOT-MRAM Switching Using Machine Learning";
Talk: Silvaco Users Global Event (SURGE), Santa Clara, CA, USA - virtual (invited); 2021-10-14; in: "Proceedings of the Silvaco Users Global Event (SURGE)", (2021), 1.

77.  M. Bendra, J. Ender, S. Fiorentini, T. Hadámek, R. Orio, W. Goes, S. Selberherr, V. Sverdlov:
"Finite Element Method Approach to MRAM Modeling";
Talk: International Convention on Information, Communication and Electronic Technology (MIPRO), Opatija, Croatia; 2021-09-27 - 2021-10-01; in: "Proceedings of the International Convention on Information, Communication and Electronic Technology (MIPRO)", (2021), ISBN: 978-953-233-101-1; 70 - 73. https://doi.org/10.23919/MIPRO52101.2021.9597194

76.  J. Ender, R. Orio, S. Fiorentini, S. Selberherr, W. Gös, V. Sverdlov:
"Improving Failure Rates in Pulsed SOT-MRAM Switching by Reinforcement Learning";
Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Bordeaux, France; 2021-10-04 - 2021-10-07; in: "Proceedings of the 32nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2021), ISSN: 0026-2714; 1 - 4. https://doi.org/10.1016/j.microrel.2021.114231

75.  J. Ender, S. Fiorentini, V. Sverdlov, W. Goes, R. Orio, S. Selberherr:
"Reinforcement Learning Approach for Deterministic SOT-MRAM Switching";
Talk: SPIE Spintronics, San Diego, CA, USA - virtual (invited); 2021-08-01 - 2021-08-05; in: "Proceedings of SPIE Spintronics", (2021), 11805-53.

74.  J. Ender, R. Orio, S. Fiorentini, S. Selberherr, W. Goes, V. Sverdlov:
"Reinforcement Learning Approach for Sub-Critical Current SOT-MRAM Switching Materials";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Dallas, Texas (USA); 2021-09-27 - 2021-09-29; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2021), 150 - 154. https://doi.org/10.1109/SISPAD54002.2021.9592561

73.  J. Ender, R. Orio, S. Fiorentini, S. Selberherr, W. Goes, V. Sverdlov:
"Reinforcement Learning to Reduce Failures in SOT-MRAM Switching";
Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2021-09-15 - 2021-10-15; in: "Proceedings of the IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2021), ISBN: 978-1-6654-3988-6. https://doi.org/10.1109/IPFA53173.2021.9617362

72.  S. Fiorentini, J. Ender, R. Orio, S. Selberherr, W. Goes, V. Sverdlov:
"Spin Drift-Diffusion Approach for the Computation of Torques in Multi-Layered Structures";
Talk: International Workshop on Computational Nanotechnology (IWCN), Daejeon, Korea (Virtual); 2021-05-24 - 2021-06-06; in: "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2021), ISBN: 978-89-89453-30-7; 51 - 52.

71.  S. Fiorentini, J. Ender, R. Orio, S. Selberherr, W. Goes, V. Sverdlov:
"Spin and Charge Drift-Diffusion Approach to Torque Computation in Magnetic Tunnel Junctions";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Dallas, Texas (USA); 2021-09-27 - 2021-09-29; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2021), 155 - 158. https://doi.org/10.1109/SISPAD54002.2021.9592559

70.  S. Fiorentini, R. Orio, S. Selberherr, J. Ender, W. Goes, V. Sverdlov:
"Spin and Charge Drift-Diffusion Approach to Torque Computation in Spintronic Devices";
Talk: 2021 Workshop on Innovative Nanoscale Devices and Systems (WINDS2021), Kona; 2021-11-28 - 2021-12-03; in: "WINDS Book of Abstracts", (2021), ISBN: 978-3-9504738-3-4; 12 - 13.

69.  T. Hadámek, M. Bendra, S. Fiorentini, J. Ender, R. Orio, W. Goes, S. Selberherr, V. Sverdlov:
"Temperature Increase in MRAM at Writing: A Finite Element Approach";
Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France; 2021-09-01 - 2021-09-03; in: "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2021), 133 - 134.

68.  S. Fiorentini, J. Ender, S. Selberherr, R. Orio, W. Goes, V. Sverdlov:
"Comprehensive Modeling of Coupled Spin and Charge Transport through Magnetic Tunnel Junctions";
Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France - virtual; 2020-03-31 - 2020-04-02; in: "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2020), 112 - 113.

67.  S. Fiorentini, J. Ender, M. Mohamedou, V. Sverdlov, W. Goes, R. Orio, S. Selberherr:
"Comprehensive Modeling of Coupled Spin-Charge Transport and Magnetization Dynamics in STT-MRAM Cells";
Talk: SPIE Spintronics, San Diego, CA, USA - virtual (invited); 2020-08-24 - 2020-08-28; in: "Proceedings of SPIE Spintronics", (2020), 11470-44.

66.  S. Fiorentini, J. Ender, M. Mohamedou, R. Orio, S. Selberherr, W. Goes, V. Sverdlov:
"Computation of Torques in Magnetic Tunnel Junctions through Spin and Charge Transport Modeling";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan - virtual; 2020-09-23 - 2020-10-06; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2020), 209 - 212. https://doi.org/10.23919/SISPAD49475.2020.9241657

65.  J. Ender, M. Mohamedou, S. Fiorentini, R. Orio, S. Selberherr, W. Goes, V. Sverdlov:
"Efficient Demagnetizing Field Calculation for Disconnected Complex Geometries in STT-MRAM Cells";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan - virtual; 2020-09-23 - 2020-10-06; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2020), 213 - 216. https://doi.org/10.23919/SISPAD49475.2020.9241662

64.  V. Sverdlov, S. Fiorentini, J. Ender, W. Goes, R. Orio, S. Selberherr:
"Emerging CMOS Compatible Magnetic Memories and Logic";
Talk: IEEE Latin America Electron Devices Conference (LAEDC), San Jose, Costa Rica (invited); 2020-02-25 - 2020-02-28; in: "Proceedings of the IEEE Latin America Electron Devices Conference (LAEDC)", (2020), ISBN: 978-1-7281-1044-8. https://doi.org/10.1109/LAEDC49063.2020.9073332

63.  S. Fiorentini, R. Orio, S. Selberherr, J. Ender, W. Goes, V. Sverdlov:
"Influence of Current Redistribution in Switching Models for Perpendicular STT-MRAM";
Talk: Meeting of the Electrochemical Society (ECS), Montreal, Canada - virtual; 2020-05-10 - 2020-05-14; in: "Abstracts of the Meeting of the Electrochemical Society (ECS)", MA2020-01/1389 (2020). https://doi.org/10.1149/MA2020-01241389mtgabs

62.  S. Fiorentini, R. Orio, S. Selberherr, J. Ender, W. Goes, V. Sverdlov:
"Perpendicular STT-MRAM Switching at Fixed Voltage and at Fixed Current";
Talk: IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Penang, Malaysia - virtual; 2020-03-16 - 2020-03-18; in: "Proceedings of the IEEE Electron Devices Technology and Manufacturing Conference (EDTM)", (2020), ISBN: 978-1-7281-2539-8; 341 - 344. https://doi.org/10.1109/EDTM47692.2020.9117985

61.  R. Orio, J. Ender, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov:
"Reduced Current Spin-Orbit Torque Switching of a Perpendicularly Magnetized Free Layer";
Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France - virtual; 2020-09-01; in: "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2020), 123 - 124.

60.  R. Orio, A. Makarov, W. Goes, J. Ender, S. Fiorentini, S. Selberherr, V. Sverdlov:
"Switching of a Perpendicularly Magnetized Free-Layer by Spin-Orbit-Torques with Reduced Currents";
Talk: World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI), Orlando, FL, USA - virtual; 2020-09-13 - 2020-09-16; in: "Proceedings of the World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI)", (2020), ISBN: 978-1-950492-37-4; 58 - 61.

59.  R. Orio, A. Makarov, J. Ender, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov:
"A Dynamical Approach to Fast and Reliable External Field Free Perpendicular Magnetization Reversal by Spin-Orbit Torques";
Poster: IEEE International Electron Devices Meeting (IEDM), San Francisco, USA; 2019-12-07 - 2019-12-11; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM) Special Poster Session Dedicated to MRAM", (2019), 1 pages.

58.  H. Ceric, S. Selberherr, H. Zahedmanesh, R. Orio, K. Croes:
"Assessment of Electromigration in Nano‐Interconnects";
Talk: International Conference on Reliability and Stress-Related Phenomena in Nanoelectronics (IRSP), San Jose, USA (invited); 2019-11-04 - 2019-11-06; in: "Abstracts of the International Conference on Reliability and Stress-Related Phenomena in Nanoelectronics (IRSP)", (2019), 7.

57.  S. Fiorentini, R. Orio, W. Goes, J. Ender, V. Sverdlov:
"Comprehensive Comparison of Switching Models for Perpendicular Spin-Transfer Torque MRAM Cells";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy; 2019-09-04 - 2019-09-06; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2019), ISBN: 978-1-7281-0938-1; 57 - 60. https://doi.org/10.1109/SISPAD.2019.8870359

56.  S. Fiorentini, R. Orio, S. Selberherr, J. Ender, W. Goes, V. Sverdlov:
"Comprehensive Modeling of Switching in Perpendicular STT-MRAM";
Poster: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA; 2019-12-01 - 2019-12-06; in: "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2019), ISBN: 978-0-578-61722-0; 107 - 108.

55.  R. Orio, A. Makarov, S. Selberherr, W. Goes, J. Ender, S. Fiorentini, V. Sverdlov:
"Efficient Magnetic Field Free Switching of Symmetric Perpendicular Magnetic Free Layer for Advanced SOT-MRAM";
Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Grenoble, France; 2019-04-01 - 2019-04-03; in: "Proceedings of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2019), 152 - 153.

54.  L. Filipovic, R. Orio:
"Electromigration in Nano-Interconnects";
Talk: Workshop on High Performance TCAD (WHPTCAD), Chicago, IL, USA (invited); 2019-05-24 - 2019-05-25; in: "Book of Abstracts of the Workshop on High Performance TCAD (WHPTCAD)", (2019), 2.

53.  R. Orio, S. Selberherr, V. Sverdlov:
"Magnetic Field-Free Deterministic Switching of a Perpendicular Magnetic Layer by Spin-Orbit Torques";
Talk: SPIE Spintronics, San Diego, CA, USA (invited); 2019-08-11 - 2019-08-15; in: "Proceedings of SPIE Spintronics", (2019), 11090-123.

52.  R. Orio, A. Makarov, S. Selberherr, W. Gös, J. Ender, S. Fiorentini, V. Sverdlov:
"Robust Magnetic Field Free Switching Scheme for Perpendicular Free Layer in Advanced Spin Orbit Torque Magnetoresistive Random Access Memory";
Talk: International Workshop on Computational Nanotechnology (IWCN), Chicago, IL, USA; 2019-05-20 - 2019-05-24; in: "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2019), ISBN: 978-3-9504738-0-3; 69 - 71.

51.  R. Orio, S. Selberherr, J. Ender, S. Fiorentini, W. Goes, V. Sverdlov:
"Robustness of the Two-Pulse Switching Scheme for SOT-MRAM";
Talk: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA; 2019-12-01 - 2019-12-06; in: "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2019), ISBN: 978-0-578-61722-0; 54 - 55.

50.  R. Orio, A. Makarov, S. Selberherr, W. Goes, J. Ender, S. Fiorentini, V. Sverdlov:
"Switching Speedup of the Magnetic Free Layer of Advanced SOT-MRAM";
Talk: European Solid-State Device Research Conference (ESSDERC), Krakow, Poland; 2019-09-23 - 2019-09-26; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2019), ISSN: 2378-6558; 146 - 149. https://doi.org/10.1109/ESSDERC.2019.8901780

49.  R. Orio, A. Makarov, W. Goes, J. Ender, S. Fiorentini, V. Sverdlov:
"Two-Pulse Magnetic Field Free Switching Scheme for Advanced Perpendicular SOT-MRAM";
Talk: International Symposium on Hysteresis Modeling and Micromagnetics (HMM), Heraklion, Greece; 2019-05-19 - 2019-05-22; in: "Book of Abstracts of the International Symposium on Hysteresis Modeling and Micromagnetics (HMM)", (2019), 34.

48.  L. Filipovic, R. Orio:
"Modeling the Influence of Grains and Material Interfaces on Electromigration";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, Texas, USA; 2018-09-24 - 2018-09-26; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2018), ISBN: 978-1-5386-6788-0; 83 - 87. https://doi.org/10.1109/SISPAD.2018.8551746

47.  H. Ceric, R. Orio, M. Rovitto:
"TCAD Approach for the Assessment of Interconnect Reliability";
Talk: International Conference Reliability and Stress-Related Phenomena in Nanoelectronics - Experiment and Simulation (IRSP), Bad Schandau, Germany (invited); 2016-05-30 - 2016-06-01; in: "Abstracts of the International Conference Reliability and Stress-Related Phenomena in Nanoelectronics - Experiment and Simulation (IRSP)", (2016), T21.

46.  H. Ceric, R. Orio, A. P. Singulani, S. Selberherr:
"3D Technology Interconnect Reliability TCAD";
Talk: Pan Pacific Microelectronics Symposium, Big Island of Hawaii, USA; 2014-02-11 - 2014-02-13; in: "Proceedings of the 2014 Pan Pacific Microelectronics Symposium", (2014), ISBN: 978-0-9888873-3-6; 1 - 8.

45.  E. Baer, P. Evanschitzky, J. Lorenz, F. Roger, R. Minixhofer, L. Filipovic, R. Orio, S. Selberherr:
"Coupled Simulation to Determine Across Wafer Variations for Electrical and Reliability Parameters of Through-Silicon VIAs";
Talk: European Workshop on Materials for Advanced Metallization (MAM), Chemnitz, Germany; 2014-03-02 - 2014-03-05; in: "Book of Abstracts", (2014), 2 pages.

44.  L. Filipovic, R. Orio, S. Selberherr, A. P. Singulani, F. Roger, R. Minixhofer:
"Effects of Sidewall Scallops on Open Tungsten TSVs";
Talk: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 2014-06-01 - 2014-06-05; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2014), ISBN: 978-1-4799-3317-4; 3E.3.1 - 3E.3.6. https://doi.org/10.1109/IRPS.2014.6860633

43.  L. Filipovic, R. Orio, S. Selberherr:
"Effects of Sidewall Scallops on the Performance and Reliability of Filled Copper and Open Tungsten TSVs";
Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, Singapore; 2014-06-30 - 2014-07-04; in: "Proceedings of the 21st International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2014), ISBN: 978-1-4799-3931-2; 321 - 326. https://doi.org/10.1109/IPFA.2014.6898137

42.  R. Orio, S. Gousseau, S. Moreau, H. Ceric, S. Selberherr, A. Farcy, F. Bay, K. Inal, P. Montmitonnet:
"On the Material Depletion Rate Due to Electromigration in a Copper TSV Structure";
Poster: IEEE International Reliability Workshop (IIRW), Fallen Leaf Lake, CA, USA; 2014-10-12 - 2014-10-16; in: "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2014), ISBN: 978-1-4799-7274-6; 111 - 114. https://doi.org/10.1109/IIRW.2014.7049523

41.  L. Filipovic, R. Orio, S. Selberherr:
"Process and Performance of Copper TSVs";
Talk: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Tarragona, Spain; 2014-01-27 - 2014-01-29; in: "Conference Proceedings of the Tenth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits", (2014), 1 - 2.

40.  L. Filipovic, R. Orio, S. Selberherr:
"Process and Reliability of SF6/O2 Plasma Etched Copper TSVs";
Talk: International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), Ghent, Belgium; 2014-04-07 - 2014-04-09; in: "Proceedings of the IEEE 15th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)", (2014), ISBN: 978-1-4799-4791-1; 4 pages. https://doi.org/10.1109/EuroSimE.2014.6813768

39.  R. Orio, S. Selberherr:
"About Voids in Copper Interconnects";
Talk: International Conference on Materials for Advanced Technologies (ICMAT), Singapore (invited); 2013-06-30 - 2013-07-05; in: "Proceedings of the International Conference on Materials for Advanced Technologies (ICMAT 2013)", (2013), 8.

38.  H. Ceric, R. Orio, S. Selberherr:
"Analysis of Solder Bump Electromigration Reliability";
Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou, China; 2013-07-15 - 2013-07-19; in: "Proceedings of the 20th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2013), ISBN: 978-1-4799-0478-5; 713 - 716. https://doi.org/10.1109/IPFA.2013.6599258

37.  W. H. Zisser, H. Ceric, R. Orio, S. Selberherr:
"Electromigration Analyses of Open TSVs";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 2013-09-03 - 2013-09-05; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3; 244 - 247. https://doi.org/10.1109/SISPAD.2013.6650620

36.  H. Ceric, A. P. Singulani, R. Orio, S. Selberherr:
"Electromigration Enhanced Growth of Intermetallic Compound in Solder Bumps";
Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 2013-10-13 - 2013-10-17; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2013), ISBN: 978-1-4799-0350-4; 166 - 169. https://doi.org/10.1109/IIRW.2013.6804185

35.  W. H. Zisser, H. Ceric, R. Orio, S. Selberherr:
"Electromigration Induced Stress in Open TSVs";
Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 2013-10-13 - 2013-10-17; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2013), ISBN: 978-1-4799-0350-4; 142 - 145. https://doi.org/10.1109/IIRW.2013.6804179

34.  H. Ceric, A. P. Singulani, R. Orio, S. Selberherr:
"Impact of Intermetallic Compound on Solder Bump Electromigration Reliability";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 2013-09-03 - 2013-09-05; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3; 73 - 76. https://doi.org/10.1109/SISPAD.2013.6650577

33.  R. Orio, H. Ceric, S. Selberherr:
"Influence of Temperature on the Standard Deviation of Electromigration Lifetimes";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 2013-09-03 - 2013-09-05; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3; 232 - 235. https://doi.org/10.1109/SISPAD.2013.6650617

32.  R. Orio, S. Selberherr:
"Physically Based Models of Electromigration";
Talk: Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong (invited); 2013-06-03 - 2013-06-05; in: "Proceedings of the International Conference on Electron Devices and Solid-State Circuits (EDSSC)", 290 (2013), 1 - 2.

31.  H. Ceric, R. Orio, W. H. Zisser, S. Selberherr:
"Ab Initio Method for Electromigration Analysis";
Talk: IEEE Electronics Packaging Technology Conference (EPTC), Singapore; 2012-07-02 - 2012-07-06; in: "Proceedings of the 19th IEEE International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2012), ISBN: 978-1-4673-0982-0; 4 pages. https://doi.org/10.1109/IPFA.2012.6306306

30.  R. Orio, H. Ceric, S. Selberherr:
"Analysis of Resistance Change Development due to Voiding in Copper Interconnects ended by a Through Silicon Via";
Talk: International Symposium on Microelectronics Technology and Devices (SBMicro), Brasilia, Brazil; 2012-08-30 - 2012-09-02; in: "ECS Transactions", 49, 1 (2012), ISBN: 978-1-56677-990-6; 273 - 280. https://doi.org/10.1149/04901.0273ecst

29.  H. Ceric, R. Orio, S. Selberherr:
"Atomistic Method for Analysis of Electromigration";
Poster: IEEE International Interconnect Technology Conference (IITC), San Jose, USA; 2012-06-04 - 2012-06-06; in: "Proceedings of the IEEE International Interconnect Technology Conference", (2012), ISBN: 978-1-4673-1137-3; 3 pages.

28.  R. Orio, H. Ceric, S. Selberherr:
"Electromigration Failure in a Copper Dual-Damascene Structure with a Through Silicon Via";
Poster: 23rd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, Cagliari, Italy; 2012-10-01 - 2012-10-05; in: "Proceedings of the 23rd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2012), 1981 - 1986.

27.  R. Orio, S. Selberherr:
"Formation and Movement of Voids in Copper Interconnect Structures";
Talk: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Xi'an, China (invited); 2012-10-29 - 2012-11-01; in: "Proceedings of the International Conference on Solid-State and Integrated Circuit Technology (ICSICT)", (2012), ISBN: 978-1-4673-2475-5; 378 - 381. https://doi.org/10.1109/ICSICT.2012.6467675

26.  R. Orio, H. Ceric, S. Selberherr:
"Modeling of Electromigration Induced Resistance Change in Three-Dimensional Interconnects with Through Silicon Vias";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2; 268 - 271.

25.  H. Ceric, R. Orio, W. H. Zisser, V. Schnitzer, S. Selberherr:
"Modeling of Microstructural Effects on Electromigration Failure";
Talk: International Workshop on Stress-Induced Phenomena in Microelectronics, Kyoto, Japan (invited); 2012-05-28 - 2012-05-30; in: "Abstracts of 12th International Workshop on Stress-Induced Phenomena in Microelectronics", (2012), 50 - 51.

24.  H. Ceric, R. Orio, S. Selberherr:
"TCAD Study of Electromigration Failure Modes in Sn-Based Solder Bumps";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2; 264 - 267.

23.  R. Orio, H. Ceric, S. Selberherr:
"A Compact Model for Early Electromigration Lifetime Estimation";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3; 23 - 26. https://doi.org/10.1109/SISPAD.2011.6035040

22.  S. E. Tyaginov, I. Starkov, H. Enichlmair, C. Jungemann, J.M. Park, E. Seebacher, R. Orio, H. Ceric, T. Grasser:
"An Analytical Approach for Physical Modeling of Hot-Carrier Induced Degradation";
Talk: 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, Bordeaux, France; 2011-10-03 - 2011-10-07; in: "Proceedings of the 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", 51 (2011), 1525 - 1529.

21.  R. Orio, S. Selberherr:
"Compact Modeling of Interconnect Reliability";
Talk: Conference on Electron Devices and Solid-State Circuits (EDSSC), Tianjin, China (invited); 2011-11-17 - 2011-11-18; in: "Proc. IEEE Conference on Electron Devices and Solid-State Circuits EDSSC", (2011), ISBN: 978-1-4577-1998-1; 2 pages. https://doi.org/10.1109/EDSSC.2011.6117564

20.  H. Ceric, R. Orio, S. Selberherr:
"Integration of Atomistic and Continuum-Level Electromigration Models";
Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Incheon, South Korea; 2011-07-04 - 2011-07-07; in: "IPFA 2011 Proceedings", (2011), ISBN: 978-1-4577-0159-7; 4 pages. https://doi.org/10.1109/IPFA.2011.5992749

19.  H. Ceric, R. Orio, S. Selberherr:
"Interconnect Reliability Dependence on Fast Diffusivity Paths";
Talk: International Conference on Materials for Advanced Technologies (ICMAT), Suntec, Singapore (invited); 2011-06-26 - 2011-07-01; in: "Proceedings of the International Conference on Materials for Advanced Technologies (ICMAT 2011)", (2011), 33.

18.  R. Orio, H. Ceric, S. Selberherr:
"Modeling Electromigration Lifetimes of Copper Interconnects";
Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Joao Pessoa, Brazil; 2011-08-30 - 2011-09-02; in: "ECS Transactions", (2011), ISBN: 978-1-56677-900-5; 163 - 169. https://doi.org/10.1149/1.3615190

17.  H. Ceric, R. Orio, F. Schanovsky, W. H. Zisser, S. Selberherr:
"Multilevel Simulation for the Investigation of Fast Diffusivity Paths";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3; 135 - 138. https://doi.org/10.1109/SISPAD.2011.6035068

16.  H. Ceric, R. Orio, S. Selberherr:
"Electromigration Anisotropy and Mechanical Stress in Modern Copper Interconnect";
Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2010-07-05 - 2010-07-09; in: "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9; 167 - 170.

15.  H. Ceric, R. Orio, S. Selberherr:
"Impact of Parameter Variability on Electromigration Lifetime Distribution";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2010), ISBN: 978-1-4244-7699-2; 217 - 220. https://doi.org/10.1109/SISPAD.2010.5604523

14.  H. Ceric, R. Orio, J. Cervenka, S. Selberherr:
"Copper Microstructure Impact on Evolution of Electromigration Induced Voids";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego, CA, USA; 2009-09-09 - 2009-09-11; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2009), ISBN: 978-1-4244-3947-8; 178 - 181. https://doi.org/10.1109/SISPAD.2009.5290222

13.  R. Orio, H. Ceric, J. Cervenka, S. Selberherr:
"Electromigration Failure Development in Modern Dual-Damascene Interconnects";
Talk: International Conference on Very Large Scale Integration (VLSI-SoC), Florianopolis; 2009-10-12 - 2009-10-14; in: "Proceedings of the International Conference on Very Large Scale Integration (VLSI-SoC)", 15 (2009), ISBN: 978-3-90188-237-1; 5 pages.

12.  R. Orio, H. Ceric, J. Cervenka, S. Selberherr:
"The Effect of Copper Grain Size Statistics on the Electromigration Lifetime Distribution";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego, CA, USA; 2009-09-09 - 2009-09-11; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2009), ISBN: 978-1-4244-3947-8; 182 - 185. https://doi.org/10.1109/SISPAD.2009.5290219

11.  H. Ceric, R. Orio, J. Cervenka, S. Selberherr:
"The Effect of Microstructure on Electromigration Induced Voids";
Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou; 2009-07-06 - 2009-07-10; in: "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2009), ISBN: 9781-4244-3912-6; 694 - 697.

10.  R. Orio, H. Ceric, J. Cervenka, S. Selberherr:
"The Effect of Microstructure on Electromigration-Induced Failure Development";
Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Natal; 2009-08-31 - 2009-09-03; in: "ECS Transactions", (2009), ISBN: 978-1-56677-737-7; 345 - 352.

9.  R. Orio, H. Ceric, J. Cervenka, S. Selberherr:
"The Effect of Microstructure on the Electromigration Lifetime Distribution";
Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou; 2009-07-06 - 2009-07-10; in: "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA2009)", (2009), 731 - 734.

8.  R. Orio, S. Carniello, H. Ceric, S. Selberherr:
"Analysis of Electromigration in Dual-Damascene Interconnect Structures";
Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Gramado; 2008-09-01 - 2008-09-04; in: "ECS Transactions", (2008), ISBN: 978-1-56677-646-2; 337 - 348.

7.  R. Orio, H. Ceric, S. Carniello, S. Selberherr:
"Analysis of Electromigration in Redundant Vias";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7; 237 - 240. https://doi.org/10.1109/SISPAD.2008.4648281

6.  H. Ceric, R. Orio, J. Cervenka, S. Selberherr:
"Analysis of Microstructure Impact on Electromigration";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7; 241 - 244. https://doi.org/10.1109/SISPAD.2008.4648282

5.  H. Ceric, R. Orio, S. Selberherr:
"Comprehensive Modeling of Electromigration Induced Interconnect Degradation Mechanisms";
Talk: International Conference on Microelectronics (MIEL), Nis (invited); 2008-05-11 - 2008-05-14; in: "Proceedings of the International Conference on Microelectronics (MIEL)", (2008), ISBN: 978-1-4244-1881-7; 69 - 76. https://doi.org/10.1109/ICMEL.2008.4559225

4.  H. Ceric, R. Orio, J. Cervenka, S. Selberherr:
"Stress-Induced Anisotropy of Electromigration in Copper Interconnects";
Talk: International Workshop on Stress-Induced Phenomena in Metallization, Austin; 2008-11-05 - 2008-11-07; in: "Proceedings of the Stress-Induced Phenomena in Metallization: 10th International Workshop", (2008), ISBN: 978-0-7354-0680-3; 56 - 62.

3.  H. Ceric, R. Orio, J. Cervenka, S. Selberherr:
"TCAD Solutions for Submicron Copper Interconnect";
Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2008-07-07 - 2008-07-11; in: "Proceedings 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2008), ISBN: 978-1-4244-2039-1; 78 - 81.

2.  R. Orio, H. Ceric, S. Selberherr:
"Effect of Strains on Anisotropic Material Transport in Copper Interconnect Structures under Electromigration Stress";
Poster: International Workshop on Computational Electronics (IWCE), Amherst, MA, USA; 2007-10-08 - 2007-10-10; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2007), 62 - 63.

1.  R. Orio, H. Ceric, S. Selberherr:
"Strain-Induced Anisotropy of Electromigration in Copper Interconnect";
Talk: International Semiconductor Device Research Symposium (ISDRS), Maryland; 2007-12-12 - 2007-12-14; in: "2007 International Semiconductor Device Research Symposium", (2007), ISBN: 978-1-4244-1892-3; 2 pages.

Talks and Poster Presentations (without Proceedings-Entry)

2.  S. Fiorentini, R. Orio, W. Goes, J. Ender, V. Sverdlov:
"Comprehensive Comparison of Switching Models for Perpendicular Spin Transfer Torque MRAM Cells";
Poster: European Materials Research Society (EMRS), Warsaw, Poland; 2019-09-16 - 2019-09-19.

1.  J. Ender, R. Orio, S. Fiorentini, W. Goes, V. Sverdlov:
"Large-Scale Finite Element Micromagnetics Simulations using Open Source Software";
Poster: European Materials Research Society (EMRS), Warsaw, Poland; 2019-09-16 - 2019-09-19.

Doctor's Theses (authored and supervised)

1.  R. Orio:
"Electromigration Modeling and Simulation";
Supervisor, Reviewer: S. Selberherr, J. W. Swart; Institut für Mikroelektronik, 2010; oral examination: 2010-06-04.

Diploma and Master Theses (authored and supervised)

1.  R. Orio, H. Ceric, S. Selberherr:
"A Compact Model for Early Electromigration Failures of Copper Dual-Damascene Interconnects";
Talk: 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, Bordeaux, France; 2011-10-03 - 2011-10-07.

Scientific Reports

2.  O. Baumgartner, O. Ertl, R. Orio, P.-J. Wagner, T. Windbacher, S. Selberherr:
"VISTA Status Report December 2009";
2009; 35 pages.

1.  H. Ceric, T. Grasser, R. Orio, M. Pourfath, M. Vasicek, S. Selberherr:
"VISTA Status Report July 2008";
2008; 38 pages.