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Publications R. Orio

131 records


Publications in Scientific Journals


25. J. Ender, S. Fiorentini, R. Orio, T. Hadámek, M. Bendra, W. Goes, S. Selberherr, V. Sverdlov:
"Advances in Modeling Emerging Magnetoresistive Random Access Memories: From Finite Element Methods to Machine Learning Approaches";
Proceedings of SPIE, 12157, (invited) (2022), 1215708-1 - 1215708-14 doi:10.1117/12.2624595. BibTeX

24. T. Hadámek, S. Fiorentini, M. Bendra, J. Ender, R. Orio, W. Goes, S. Selberherr, V. Sverdlov:
"Temperature Increase in STT-MRAM at Writing: A Fully Three-Dimensional Finite Element Approach";
Solid-State Electronics, 193, (invited) (2022), 108269-1 - 108269-7 doi:10.1016/j.sse.2022.108269. BibTeX

23. H. Ceric, S. Selberherr, H. Zahedmanesh, R. Orio, K. Croes:
"Review - Modeling Methods for Analysis of Electromigration Degradation in Nano-Interconnects";
ECS Journal of Solid State Science and Technology, 10, (2021), 035003-1 - 035003-11 doi:10.1149/2162-8777/abe7a9. BibTeX

22. J. Ender, S. Fiorentini, R. Orio, W. Goes, V. Sverdlov, S. Selberherr:
"Emerging CMOS Compatible Magnetic Memories and Logic";
IEEE Journal of the Electron Devices Society, 9, (invited) (2021), 456 - 463 doi:10.1109/JEDS.2021.3066679. BibTeX

21. J. Ender, R. Orio, S. Fiorentini, S. Selberherr, W. Goes, V. Sverdlov:
"Improving Failure Rates in Pulsed SOT-MRAM Switching by Reinforcement Learning";
Microelectronics Reliability, 126, (2021), 114231-1 - 114231-5 doi:10.1016/j.microrel.2021.114231. BibTeX

20. J. Ender, R. Orio, S. Fiorentini, S. Selberherr, W. Goes, V. Sverdlov:
"Reinforcement Learning Approach for Deterministic SOT-MRAM Switching";
Proceedings of SPIE, 11805, (invited) (2021), 1180519-1 - 1180519-8 doi:10.1117/12.2593937. BibTeX

19. S. Fiorentini, J. Ender, S. Selberherr, R. Orio, W. Goes, V. Sverdlov:
"Coupled Spin and Charge Drift-Diffusion Approach Applied to Magnetic Tunnel Junctions";
Solid-State Electronics, 186, (invited) (2021), 108103 doi:10.1016/j.sse.2021.108103. BibTeX

18. R. Orio, J. Ender, S. Fiorentini, W. Gös, S. Selberherr, V. Sverdlov:
"Numerical Analysis of Deterministic Switching of a Perpendicularly Magnetized Spin-Orbit Torque Memory Cell";
IEEE Journal of the Electron Devices Society, 9, (2021), 61 - 67 doi:10.1109/JEDS.2020.3039544. BibTeX

17. R. Orio, J. Ender, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov:
"Optimization of a Spin-Orbit Torque Switching Scheme Based on Micromagnetic Simulations and Reinforcement Learning";
Micromachines, 12, (2021), 443 doi:10.3390/mi12040443. BibTeX

16. R. Orio, J. Ender, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov:
"Two-Pulse Switching Scheme and Reinforcement Learning for Energy Efficient SOT-MRAM Simulations";
Solid-State Electronics, 185, (invited) (2021), 108075 doi:10.1016/j.sse.2021.108075. BibTeX

15. S. Fiorentini, J. Ender, M. Mohamedou, S. Selberherr, R. Orio, W. Goes, V. Sverdlov:
"Comprehensive Modeling of Coupled Spin-Charge Transport and Magnetization Dynamics in STT-MRAM Cells";
Proceedings of SPIE, 11470, (invited) (2020), 50 - 56 doi:10.1117/12.2567480. BibTeX

14. S. Fiorentini, R. Orio, S. Selberherr, J. Ender, W. Goes, V. Sverdlov:
"Analysis of Switching Under Fixed Voltage and Fixed Current in Perpendicular STT-MRAM";
IEEE Journal of the Electron Devices Society, 8, (invited) (2020), 1249 - 1256 doi:10.1109/JEDS.2020.3023577. BibTeX

13. R. Orio, A. Makarov, W. Goes, J. Ender, S. Fiorentini, V. Sverdlov:
"Two-Pulse Magnetic Field-Free Switching Scheme for Perpendicular SOT-MRAM with a Symmetric Square Free Layer";
Physica B: Condensed Matter, 578, (2020), 411743 doi:10.1016/j.physb.2019.411743. BibTeX

12. R. Orio, A. Makarov, S. Selberherr, W. Goes, J. Ender, S. Fiorentini, V. Sverdlov:
"Robust Magnetic Field-Free Switching of a Perpendicularly Magnetized Free Layer for SOT-MRAM";
Solid-State Electronics, 168, (2020), 107730-1 - 107730-7 doi:10.1016/j.sse.2019.107730. BibTeX

11. R. Orio, S. Selberherr, V. Sverdlov:
"Magnetic Field-Free Deterministic Switching of a Perpendicular Magnetic Layer by Spin-Orbit Torques";
Proceedings of SPIE, 11090, (invited) (2019), 110903F-1 - 110903F-6 doi:10.1117/12.2529119. BibTeX

10. E. Baer, P. Evanschitzky, J. Lorenz, F. Roger, R. Minixhofer, L. Filipovic, R. Orio, S. Selberherr:
"Coupled Simulation to Determine the Impact of Across Wafer Variations in Oxide PECVD on Electrical and Reliability Parameters of Through-Silicon Vias";
Microelectronic Engineering, 137, (2015), 141 - 145 doi:10.1016/j.mee.2014.11.014. BibTeX

9. H. Ceric, R. Orio, W. H. Zisser, S. Selberherr:
"Microstructural Impact on Electromigration: A TCAD Study";
Facta universitatis - series: Electronics and Energetics, 27, (2014), 1 - 11 doi:10.2298/FUEE1401001C. BibTeX

8. H. Ceric, R. Orio, S. Selberherr:
"Interconnect Reliability Dependence on Fast Diffusivity Paths";
Microelectronics Reliability, 52, (invited) (2012), 1532 - 1538 doi:10.1016/j.microrel.2011.09.035. BibTeX

7. R. Orio, H. Ceric, S. Selberherr:
"Electromigration Failure in a Copper Dual-Damascene Structure with a Through Silicon Via";
Microelectronics Reliability, 52, (2012), 1981 - 1986 doi:10.1016/j.microrel.2012.07.021. BibTeX

6. R. Orio, H. Ceric, S. Selberherr:
"A Compact Model for Early Electromigration Failures of Copper Dual-Damascene Interconnects";
Microelectronics Reliability, 51, (2011), 1573 - 1577 doi:10.1016/j.microrel.2011.07.049. BibTeX

5. S. E. Tyaginov, I. Starkov, H. Enichlmair, C. Jungemann, J.M. Park, E. Seebacher, R. Orio, H. Ceric, T. Grasser:
"An Analytical Approach for Physical Modeling of Hot-Carrier Induced Degradation";
Microelectronics Reliability, 51, (2011), 1525 - 1529 doi:10.1016/j.microrel.2011.07.089. BibTeX

4. R. Orio, H. Ceric, S. Selberherr:
"Physically based Models of Electromigration: From Black´s Equation to Modern TCAD Models";
Microelectronics Reliability, 50, (invited) (2010), 775 - 789 doi:10.1016/j.microrel.2010.01.007. BibTeX

3. H. Ceric, R. Orio, J. Cervenka, S. Selberherr:
"A Comprehensive TCAD Approach for Assessing Electromigration Reliability of Modern Interconnects";
IEEE Transactions on Device and Materials Reliability, 9, (2009), 9 - 19 doi:10.1109/TDMR.2008.2000893. BibTeX

2. R. Orio, H. Ceric, S. Selberherr:
"Analysis of Electromigration in Dual-Damascene Interconnect Structures";
Journal Integrated Circuits and Systems, 4, (2009), 67 - 72 doi:10.29292/jics.v4i2.300. BibTeX

1. R. Orio, H. Ceric, S. Selberherr:
"Effect of Strains on Anisotropic Material Transport in Copper Interconnect Structures under Electromigration Stress";
Journal of Computational Electronics, 7, (2008), 128 - 131 doi:10.1007/s10825-008-0211-9. BibTeX


Contributions to Books


5. T. Hadámek, M. Bendra, S. Fiorentini, J. Ender, R. Orio, W. Goes, S. Selberherr, V. Sverdlov:
"Temperature Increase in MRAM at Writing: A Finite Element Approach";
in "Proceedings of the 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", B. Cretu (ed); IEEE, 2021, ISBN: 978-1-6654-3746-2, 1 - 4 doi:10.1109/EuroSOI-ULIS53016.2021.9560669. BibTeX

4. S. Fiorentini, J. Ender, S. Selberherr, R. Orio, W. Goes, V. Sverdlov:
"Comprehensive Modeling of Coupled Spin and Charge Transport through Magnetic Tunnel Junctions";
in "Proceedings of the 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", B. Cretu (ed); IEEE, 2020, ISBN: 978-1-7281-8765-5, 1 - 4 doi:10.1109/EUROSOI-ULIS49407.2020.9365497. BibTeX

3. S. Fiorentini, R. Orio, S. Selberherr, J. Ender, W. Gös, V. Sverdlov:
"Influence of Current Redistribution in Switching Models for Perpendicular STT-MRAM";
in "Advanced CMOS-Compatible Semiconductor Devices 19, Vol. 97, No. 5", issued by The Electrochemical Society; J. A. Martino, B.-Y. Nguyen, F. Gamiz, H. Ishii, J.-P. Raskin, S. Selberherr, E. Simoen (ed); ECS Transactions, 2020, ISBN: 978-1-62332-604-3, 159 - 164 doi:10.1149/09705.0159ecst. BibTeX

2. R. Orio, J. Ender, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov:
"Reduced Current Spin-Orbit Torque Switching of a Perpendicularly Magnetized Free Layer";
in "Proceedings of the 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", B. Cretu (ed); IEEE, 2020, ISBN: 978-1-7281-8765-5, 1 - 4 doi:10.1109/EUROSOI-ULIS49407.2020.9365283. BibTeX

1. R. Orio, A. Makarov, S. Selberherr, W. Goes, J. Ender, S. Fiorentini, V. Sverdlov:
"Efficient Magnetic Field-Free Switching of a Symmetric Perpendicular Magnetic Free Layer for Advanced SOT-MRAM";
in "Proceedings of the 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", J. Lacord, M. Bawedin (ed); IEEE, 2019, ISBN: 978-1-7281-1658-7, 1 - 4 doi:10.1109/EUROSOI-ULIS45800.2019.9041920. BibTeX


Talks and Poster Presentations (with Proceedings-Entry)


95. S. Fiorentini, W.J. Loch, M. Bendra, N. Jørstad, J. Ender, R. Orio, T. Hadámek, W. Goes, V. Sverdlov, S. Selberherr:
"Design Analysis of Ultra-Scaled MRAM Cells";
Talk: 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, Nanjing, China; (invited) 2022-10-25 - 2022-10-28; in "Proceedings of 2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)", (2022), ISBN: 978-1-6654-6905-0, . BibTeX

94. V. Sverdlov, M. Bendra, S. Fiorentini, J. Ender, R. Orio, T. Hadámek, W.J. Loch, N. Jørstad, W. Goes, S. Selberherr:
"Modeling Advanced Spintronic Based Magnetoresistive Memory";
Talk: International Conference on Microwave & THz Technologies, Wireless Communications and OptoElectronics (IRPhE 2022), Yerevan, Armenia; (invited) 2022-09-27 - 2022-09-29; in "Book of Abstracts of the International Conference on Microwave & THz Technologies and Optoelectronics (IRPhE)", (2022), . BibTeX

93. H. Ceric, R. Orio, S. Selberherr:
"Impact of Gold Interconnect Microstructure on Electromigration Failure Time Statistics";
Talk: IEEE European Solid-State Device Research Conference (ESSDERC), Milan, Italy; 2022-09-20 - 2022-09-22; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2022), ISBN: 978-1-6654-8496-1, 301 - 303. BibTeX

92. S. Fiorentini, M. Bendra, J. Ender, R. Orio, W. Goes, S. Selberherr, V. Sverdlov:
"Spin Torques in ULTRA-Scaled MRAM Devices";
Talk: IEEE European Solid-State Device Research Conference (ESSDERC), Mailand; 2022-09-20 - 2022-09-22; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2022), ISBN: 978-1-6654-8496-1, 348 - 351. BibTeX

91. H. Ceric, R. Orio, S. Selberherr:
"Microstructural Impact on Electromigration Reliability of Gold Interconnects";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022), Granada, Spain; 2022-09-06 - 2022-09-08; in "SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet", (2022), 178 - 179. BibTeX

90. S. Fiorentini, J. Ender, R. Orio, S. Selberherr, W. Goes, V. Sverdlov:
"Comprehensive Evaluation of Torques in Ultra Scaled MRAM Devices";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022), Granada, Spain; 2022-09-06 - 2022-09-08; in "SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet", (2022), 11 - 12. BibTeX

89. H. Ceric, R. Orio, S. Selberherr:
"Electromigration Degradation of Gold Interconnects: A Statistical Study";
Talk: IEEE International Interconnect Technology Conference (IITC), San Jose, California,; 2022-06-27 - 2022-06-30; in "2022 IEEE International Interconnect Technology Conference (IITC)", (2022), 102 - 104 doi:10.1109/IITC52079.2022.9881313. BibTeX

88. V. Sverdlov, W. Loch, M. Bendra, S. Fiorentini, J. Ender, R. Orio, T. Hadámek, N. Jorstad, W. Goes, S. Selberherr:
"Modeling Approach to Ultra-Scaled MRAM Cells";
Talk: ASETMEET2022 International Meet On Applied Science, Engineering and Technology, Taastrup, Copenhagen; (invited) 2022-06-23 - 2022-06-25; in "Book of Abstracts of the International Meet On Applied Science, Engineering and Technology (ASETMEET)", (2022), 7 - 8. BibTeX

87. T. Hadámek, S. Fiorentini, M. Bendra, R. Orio, W.J. Loch, N. Jorstad, S. Selberherr, W. Goes, V. Sverdlov:
"Temperature Modeling in STT-MRAM:A Fully Three-Dimensional Finite Element Approach";
Talk: 16th International Conference on Nanostructured Materials, Sevilla, Spain; 2022-06-06 - 2022-06-10; in "Book of Abstracts of the International Conference on Nanostructured Materials (NANO)", (2022), . BibTeX

86. R. Orio, J. Ender, W. Goes, S. Fiorentini, S. Selberherr, V. Sverdlov:
"About the Switching Energy of a Magnetic Tunnel Junction determined by Spin-Orbit Torque and Voltage-Controlled Magnetic Anisotropy";
Talk: 2022 IEEE Latin American Electron Devices Conference (LAEDC), Puebla, Mexico; 2022-06-04 - 2022-06-06; in "2022 IEEE Latin American Electron Devices Conference (LAEDC)", (2022), ISBN: 978-1-6654-9768-8, 1 - 4 doi:10.1109/LAEDC54796.2022.9908222. BibTeX

85. V. Sverdlov, M. Bendra, S. Fiorentini, J. Ender, R. Orio, T. Hadámek, W.J. Loch, N. Jørstad, W. Goes, S. Selberherr:
"Emerging Devices for Digital Spintronics";
2nd Global Conference & Expo on Nanotechnology & Nanoscience, online; (invited) 2022-05-25 - 2022-05-26; in "2nd Global Conference & Expo on Nanotechnology & Nanoscience", (2022), 32 - 33. BibTeX

84. M. Bendra, S. Fiorentini, J. Ender, R. Orio, T. Hadámek, W.J. Loch, N. Jørstad, S. Selberherr, W. Goes, V. Sverdlov:
"Spin Transfer Torques in Ultra-Scaled MRAM Cells";
Talk: MIPRO 2022, Opatija, Croatia; 2022-05-23 - 2022-05-27; in "2022 45th Jubilee International Convention on Information, Communication and Electronic Technology (MIPRO)", (2022), ISBN: 978-953-233-103-5, 129 - 132. BibTeX

83. M. Bendra, S. Fiorentini, J. Ender, R. Orio, T. Hadámek, W.J. Loch, N. Jørstad, W. Goes, S. Selberherr:
"Interface Effects in Ultra-Scaled MRAM Cells";
Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Udine, Italy; 2022-05-18 - 2022-05-20; in "Proceedings of the Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS)", (2022), . BibTeX

82. V. Sverdlov, M. Bendra, S. Fiorentini, J. Ender, R. Orio, T. Hadámek, W.J. Loch, N. Jørstad, S. Selberherr:
"Modeling Advanced Magnetoresistive Memory: A Journey from Finite Element Methods to Machine Learning Approaches";
2 nd Global Webinar on Nanoscience & Nanotechnology, online; (invited) 2022-03-14 - 2022-03-15; in "2nd Global Webinar on Nanoscience & Nanotechnology", (2022), . BibTeX

81. S. Fiorentini, M. Bendra, J. Ender, R. Orio, S. Selberherr, W. Goes, V. Sverdlov:
"Design Support for Ultra-Scaled MRAM Cells";
Poster: IEEE International Electron Devices Meeting (IEDM), San Francisco, USA; 2021-12-13 - 2021-12-15; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM) Special Poster Session Dedicated to MRAM", (2021), 1 page(s) . BibTeX

80. S. Fiorentini, R. Orio, S. Selberherr, J. Ender, W. Goes, V. Sverdlov:
"Spin and Charge Drift-Diffusion Approach to Torque Computation in Spintronic Devices";
Talk: 2021 Workshop on Innovative Nanoscale Devices and Systems (WINDS2021), Kona; 2021-11-28 - 2021-12-03; in "WINDS Book of Abstracts", (2021), ISBN: 978-3-9504738-3-4, 12 - 13. BibTeX

79. J. Ender, R. Orio, V. Sverdlov:
"Enhancing SOT-MRAM Switching Using Machine Learning";
Talk: Silvaco Users Global Event (SURGE), Santa Clara, CA, USA - virtual; (invited) 2021-10-14 in "Proceedings of the Silvaco Users Global Event (SURGE)", (2021), 1. BibTeX

78. J. Ender, S. Fiorentini, R. Orio, T. Hadámek, M. Bendra, W. Goes, S. Selberherr, V. Sverdlov:
"Advanced Modeling of Emerging MRAM: From Finite Element Methods to Machine Learning Approaches";
Talk: International Conference Micro- and Nanoelectronics (ICMNE), Moscow-Zvenigorod, Russia; (invited) 2021-10-04 - 2021-10-08; in "Proceedings of the International Conference Micro- and Nanoelectronics (ICMNE)", (2021), ISBN: 978-5-317-06675-8, . BibTeX

77. J. Ender, R. Orio, S. Fiorentini, S. Selberherr, W. Gös, V. Sverdlov:
"Improving Failure Rates in Pulsed SOT-MRAM Switching by Reinforcement Learning";
Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Bordeaux, France; 2021-10-04 - 2021-10-07; in "Proceedings of the 32nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2021), ISSN: 0026-2714, 1 - 4 doi:10.1016/j.microrel.2021.114231. BibTeX

76. M. Bendra, J. Ender, S. Fiorentini, T. Hadámek, R. Orio, W. Goes, S. Selberherr, V. Sverdlov:
"Finite Element Method Approach to MRAM Modeling";
Talk: International Convention on Information, Communication and Electronic Technology (MIPRO), Opatija, Croatia; 2021-09-27 - 2021-10-01; in "Proceedings of the International Convention on Information, Communication and Electronic Technology (MIPRO)", (2021), ISBN: 978-953-233-101-1, 70 - 73 doi:10.23919/MIPRO52101.2021.9597194. BibTeX

75. J. Ender, R. Orio, S. Fiorentini, S. Selberherr, W. Goes, V. Sverdlov:
"Reinforcement Learning Approach for Sub-Critical Current SOT-MRAM Switching Materials";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Dallas, Texas (USA); 2021-09-27 - 2021-09-29; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2021), 150 - 154 doi:10.1109/SISPAD54002.2021.9592561. BibTeX

74. S. Fiorentini, J. Ender, R. Orio, S. Selberherr, W. Goes, V. Sverdlov:
"Spin and Charge Drift-Diffusion Approach to Torque Computation in Magnetic Tunnel Junctions";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Dallas, Texas (USA); 2021-09-27 - 2021-09-29; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2021), 155 - 158 doi:10.1109/SISPAD54002.2021.9592559. BibTeX

73. J. Ender, R. Orio, S. Fiorentini, S. Selberherr, W. Goes, V. Sverdlov:
"Reinforcement Learning to Reduce Failures in SOT-MRAM Switching";
Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2021-09-15 - 2021-10-15; in "Proceedings of the IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2021), ISBN: 978-1-6654-3988-6, doi:10.1109/IPFA53173.2021.9617362. BibTeX

72. R. Orio, J. Ender, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov:
"Deterministic Spin-Orbit Switching Scheme for an Array of Perpendicular MRAM Cells Suitable for Large Scale Integration";
Talk: Trends in Magnetism (TMAG), Cefalù, Italy; 2021-09-06 - 2021-09-10; in "Proceedings of the Trends in Magnetism Conference (TMAG)", (2021), . BibTeX

71. T. Hadámek, M. Bendra, S. Fiorentini, J. Ender, R. Orio, W. Goes, S. Selberherr, V. Sverdlov:
"Temperature Increase in MRAM at Writing: A Finite Element Approach";
Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France; 2021-09-01 - 2021-09-03; in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2021), 133 - 134. BibTeX

70. J. Ender, S. Fiorentini, V. Sverdlov, W. Goes, R. Orio, S. Selberherr:
"Reinforcement Learning Approach for Deterministic SOT-MRAM Switching";
Talk: SPIE Spintronics, San Diego, CA, USA - virtual; (invited) 2021-08-01 - 2021-08-05; in "Proceedings of SPIE Spintronics", (2021), 11805-53. BibTeX

69. S. Fiorentini, J. Ender, R. Orio, S. Selberherr, W. Goes, V. Sverdlov:
"Spin Drift-Diffusion Approach for the Computation of Torques in Multi-Layered Structures";
Talk: International Workshop on Computational Nanotechnology (IWCN), Daejeon, Korea (Virtual); 2021-05-24 - 2021-06-06; in "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2021), ISBN: 978-89-89453-30-7, 51 - 52. BibTeX

68. J. Ender, M. Mohamedou, S. Fiorentini, R. Orio, S. Selberherr, W. Goes, V. Sverdlov:
"Efficient Demagnetizing Field Calculation for Disconnected Complex Geometries in STT-MRAM Cells";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan - virtual; 2020-09-23 - 2020-10-06; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2020), 213 - 216 doi:10.23919/SISPAD49475.2020.9241662. BibTeX

67. S. Fiorentini, J. Ender, M. Mohamedou, R. Orio, S. Selberherr, W. Goes, V. Sverdlov:
"Computation of Torques in Magnetic Tunnel Junctions through Spin and Charge Transport Modeling";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan - virtual; 2020-09-23 - 2020-10-06; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2020), 209 - 212 doi:10.23919/SISPAD49475.2020.9241657. BibTeX

66. R. Orio, A. Makarov, W. Goes, J. Ender, S. Fiorentini, S. Selberherr, V. Sverdlov:
"Switching of a Perpendicularly Magnetized Free-Layer by Spin-Orbit-Torques with Reduced Currents";
Talk: World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI), Orlando, FL, USA - virtual; 2020-09-13 - 2020-09-16; in "Proceedings of the World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI)", (2020), ISBN: 978-1-950492-37-4, 58 - 61. BibTeX

65. R. Orio, J. Ender, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov:
"Reduced Current Spin-Orbit Torque Switching of a Perpendicularly Magnetized Free Layer";
Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France - virtual; 2020-09-01 in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2020), 123 - 124. BibTeX

64. S. Fiorentini, J. Ender, M. Mohamedou, V. Sverdlov, W. Goes, R. Orio, S. Selberherr:
"Comprehensive Modeling of Coupled Spin-Charge Transport and Magnetization Dynamics in STT-MRAM Cells";
Talk: SPIE Spintronics, San Diego, CA, USA - virtual; (invited) 2020-08-24 - 2020-08-28; in "Proceedings of SPIE Spintronics", (2020), 11470-44. BibTeX

63. S. Fiorentini, R. Orio, S. Selberherr, J. Ender, W. Goes, V. Sverdlov:
"Influence of Current Redistribution in Switching Models for Perpendicular STT-MRAM";
Talk: Meeting of the Electrochemical Society (ECS), Montreal, Canada - virtual; 2020-05-10 - 2020-05-14; in "Abstracts of the Meeting of the Electrochemical Society (ECS)", (2020), MA2020-01/1389, doi:10.1149/MA2020-01241389mtgabs. BibTeX

62. S. Fiorentini, J. Ender, S. Selberherr, R. Orio, W. Goes, V. Sverdlov:
"Comprehensive Modeling of Coupled Spin and Charge Transport through Magnetic Tunnel Junctions";
Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France - virtual; 2020-03-31 - 2020-04-02; in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2020), 112 - 113. BibTeX

61. S. Fiorentini, R. Orio, S. Selberherr, J. Ender, W. Goes, V. Sverdlov:
"Perpendicular STT-MRAM Switching at Fixed Voltage and at Fixed Current";
Talk: IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Penang, Malaysia - virtual; 2020-03-16 - 2020-03-18; in "Proceedings of the IEEE Electron Devices Technology and Manufacturing Conference (EDTM)", (2020), ISBN: 978-1-7281-2539-8, 341 - 344 doi:10.1109/EDTM47692.2020.9117985. BibTeX

60. V. Sverdlov, S. Fiorentini, J. Ender, W. Goes, R. Orio, S. Selberherr:
"Emerging CMOS Compatible Magnetic Memories and Logic";
Talk: IEEE Latin America Electron Devices Conference (LAEDC), San Jose, Costa Rica; (invited) 2020-02-25 - 2020-02-28; in "Proceedings of the IEEE Latin America Electron Devices Conference (LAEDC)", (2020), ISBN: 978-1-7281-1044-8, doi:10.1109/LAEDC49063.2020.9073332. BibTeX

59. R. Orio, A. Makarov, J. Ender, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov:
"A Dynamical Approach to Fast and Reliable External Field Free Perpendicular Magnetization Reversal by Spin-Orbit Torques";
Poster: IEEE International Electron Devices Meeting (IEDM), San Francisco, USA; 2019-12-07 - 2019-12-11; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM) Special Poster Session Dedicated to MRAM", (2019), 1 page(s) . BibTeX

58. S. Fiorentini, R. Orio, S. Selberherr, J. Ender, W. Goes, V. Sverdlov:
"Comprehensive Modeling of Switching in Perpendicular STT-MRAM";
Poster: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA; 2019-12-01 - 2019-12-06; in "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2019), ISBN: 978-0-578-61722-0, 107 - 108. BibTeX

57. R. Orio, S. Selberherr, J. Ender, S. Fiorentini, W. Goes, V. Sverdlov:
"Robustness of the Two-Pulse Switching Scheme for SOT-MRAM";
Talk: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA; 2019-12-01 - 2019-12-06; in "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2019), ISBN: 978-0-578-61722-0, 54 - 55. BibTeX

56. H. Ceric, S. Selberherr, H. Zahedmanesh, R. Orio, K. Croes:
"Assessment of Electromigration in Nano‐Interconnects";
Talk: International Conference on Reliability and Stress-Related Phenomena in Nanoelectronics (IRSP), San Jose, USA; (invited) 2019-11-04 - 2019-11-06; in "Abstracts of the International Conference on Reliability and Stress-Related Phenomena in Nanoelectronics (IRSP)", (2019), 7. BibTeX

55. R. Orio, A. Makarov, S. Selberherr, W. Goes, J. Ender, S. Fiorentini, V. Sverdlov:
"Switching Speedup of the Magnetic Free Layer of Advanced SOT-MRAM";
Talk: European Solid-State Device Research Conference (ESSDERC), Krakow, Poland; 2019-09-23 - 2019-09-26; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2019), ISSN: 2378-6558, 146 - 149 doi:10.1109/ESSDERC.2019.8901780. BibTeX

54. S. Fiorentini, R. Orio, W. Goes, J. Ender, V. Sverdlov:
"Comprehensive Comparison of Switching Models for Perpendicular Spin-Transfer Torque MRAM Cells";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy; 2019-09-04 - 2019-09-06; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2019), ISBN: 978-1-7281-0938-1, 57 - 60 doi:10.1109/SISPAD.2019.8870359. BibTeX

53. R. Orio, S. Selberherr, V. Sverdlov:
"Magnetic Field-Free Deterministic Switching of a Perpendicular Magnetic Layer by Spin-Orbit Torques";
Talk: SPIE Spintronics, San Diego, CA, USA; (invited) 2019-08-11 - 2019-08-15; in "Proceedings of SPIE Spintronics", (2019), 11090-123. BibTeX

52. L. Filipovic, R. Orio:
"Electromigration in Nano-Interconnects";
Talk: Workshop on High Performance TCAD (WHPTCAD), Chicago, IL, USA; (invited) 2019-05-24 - 2019-05-25; in "Book of Abstracts of the Workshop on High Performance TCAD (WHPTCAD)", (2019), 2. BibTeX

51. R. Orio, A. Makarov, S. Selberherr, W. Gös, J. Ender, S. Fiorentini, V. Sverdlov:
"Robust Magnetic Field Free Switching Scheme for Perpendicular Free Layer in Advanced Spin Orbit Torque Magnetoresistive Random Access Memory";
Talk: International Workshop on Computational Nanotechnology (IWCN), Chicago, IL, USA; 2019-05-20 - 2019-05-24; in "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2019), ISBN: 978-3-9504738-0-3, 69 - 71. BibTeX

50. R. Orio, A. Makarov, W. Goes, J. Ender, S. Fiorentini, V. Sverdlov:
"Two-Pulse Magnetic Field Free Switching Scheme for Advanced Perpendicular SOT-MRAM";
Talk: International Symposium on Hysteresis Modeling and Micromagnetics (HMM), Heraklion, Greece; 2019-05-19 - 2019-05-22; in "Book of Abstracts of the International Symposium on Hysteresis Modeling and Micromagnetics (HMM)", (2019), 34. BibTeX

49. R. Orio, A. Makarov, S. Selberherr, W. Goes, J. Ender, S. Fiorentini, V. Sverdlov:
"Efficient Magnetic Field Free Switching of Symmetric Perpendicular Magnetic Free Layer for Advanced SOT-MRAM";
Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Grenoble, France; 2019-04-01 - 2019-04-03; in "Proceedings of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2019), 152 - 153. BibTeX

48. L. Filipovic, R. Orio:
"Modeling the Influence of Grains and Material Interfaces on Electromigration";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, Texas, USA; 2018-09-24 - 2018-09-26; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2018), ISBN: 978-1-5386-6788-0, 83 - 87 doi:10.1109/SISPAD.2018.8551746. BibTeX

47. H. Ceric, R. Orio, M. Rovitto:
"TCAD Approach for the Assessment of Interconnect Reliability";
Talk: International Conference Reliability and Stress-Related Phenomena in Nanoelectronics - Experiment and Simulation (IRSP), Bad Schandau, Germany; (invited) 2016-05-30 - 2016-06-01; in "Abstracts of the International Conference Reliability and Stress-Related Phenomena in Nanoelectronics - Experiment and Simulation (IRSP)", (2016), T21. BibTeX

46. R. Orio, S. Gousseau, S. Moreau, H. Ceric, S. Selberherr, A. Farcy, F. Bay, K. Inal, P. Montmitonnet:
"On the Material Depletion Rate Due to Electromigration in a Copper TSV Structure";
Poster: IEEE International Reliability Workshop (IIRW), Fallen Leaf Lake, CA, USA; 2014-10-12 - 2014-10-16; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2014), ISBN: 978-1-4799-7274-6, 111 - 114 doi:10.1109/IIRW.2014.7049523. BibTeX

45. L. Filipovic, R. Orio, S. Selberherr:
"Effects of Sidewall Scallops on the Performance and Reliability of Filled Copper and Open Tungsten TSVs";
Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, Singapore; 2014-06-30 - 2014-07-04; in "Proceedings of the 21st International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2014), ISBN: 978-1-4799-3931-2, 321 - 326 doi:10.1109/IPFA.2014.6898137. BibTeX

44. L. Filipovic, R. Orio, S. Selberherr, A. P. Singulani, F. Roger, R. Minixhofer:
"Effects of Sidewall Scallops on Open Tungsten TSVs";
Talk: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 2014-06-01 - 2014-06-05; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2014), ISBN: 978-1-4799-3317-4, 3E.3.1 - 3E.3.6 doi:10.1109/IRPS.2014.6860633. BibTeX

43. L. Filipovic, R. Orio, S. Selberherr:
"Process and Reliability of SF6/O2 Plasma Etched Copper TSVs";
Talk: International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), Ghent, Belgium; 2014-04-07 - 2014-04-09; in "Proceedings of the IEEE 15th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)", (2014), ISBN: 978-1-4799-4791-1, 4 page(s) doi:10.1109/EuroSimE.2014.6813768. BibTeX

42. E. Baer, P. Evanschitzky, J. Lorenz, F. Roger, R. Minixhofer, L. Filipovic, R. Orio, S. Selberherr:
"Coupled Simulation to Determine Across Wafer Variations for Electrical and Reliability Parameters of Through-Silicon VIAs";
Talk: European Workshop on Materials for Advanced Metallization (MAM), Chemnitz, Germany; 2014-03-02 - 2014-03-05; in "Book of Abstracts", (2014), 2 page(s) . BibTeX

41. H. Ceric, R. Orio, A. P. Singulani, S. Selberherr:
"3D Technology Interconnect Reliability TCAD";
Talk: Pan Pacific Microelectronics Symposium, Big Island of Hawaii, USA; 2014-02-11 - 2014-02-13; in "Proceedings of the 2014 Pan Pacific Microelectronics Symposium", (2014), ISBN: 978-0-9888873-3-6, 1 - 8. BibTeX

40. L. Filipovic, R. Orio, S. Selberherr:
"Process and Performance of Copper TSVs";
Talk: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Tarragona, Spain; 2014-01-27 - 2014-01-29; in "Conference Proceedings of the Tenth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits", (2014), 1 - 2. BibTeX

39. H. Ceric, A. P. Singulani, R. Orio, S. Selberherr:
"Electromigration Enhanced Growth of Intermetallic Compound in Solder Bumps";
Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 2013-10-13 - 2013-10-17; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2013), ISBN: 978-1-4799-0350-4, 166 - 169 doi:10.1109/IIRW.2013.6804185. BibTeX

38. W. H. Zisser, H. Ceric, R. Orio, S. Selberherr:
"Electromigration Induced Stress in Open TSVs";
Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 2013-10-13 - 2013-10-17; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2013), ISBN: 978-1-4799-0350-4, 142 - 145 doi:10.1109/IIRW.2013.6804179. BibTeX

37. H. Ceric, A. P. Singulani, R. Orio, S. Selberherr:
"Impact of Intermetallic Compound on Solder Bump Electromigration Reliability";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 2013-09-03 - 2013-09-05; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 73 - 76 doi:10.1109/SISPAD.2013.6650577. BibTeX

36. R. Orio, H. Ceric, S. Selberherr:
"Influence of Temperature on the Standard Deviation of Electromigration Lifetimes";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 2013-09-03 - 2013-09-05; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 232 - 235 doi:10.1109/SISPAD.2013.6650617. BibTeX

35. W. H. Zisser, H. Ceric, R. Orio, S. Selberherr:
"Electromigration Analyses of Open TSVs";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 2013-09-03 - 2013-09-05; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 244 - 247 doi:10.1109/SISPAD.2013.6650620. BibTeX

34. H. Ceric, R. Orio, S. Selberherr:
"Analysis of Solder Bump Electromigration Reliability";
Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou, China; 2013-07-15 - 2013-07-19; in "Proceedings of the 20th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2013), ISBN: 978-1-4799-0478-5, 713 - 716 doi:10.1109/IPFA.2013.6599258. BibTeX

33. R. Orio, S. Selberherr:
"About Voids in Copper Interconnects";
Talk: International Conference on Materials for Advanced Technologies (ICMAT), Singapore; (invited) 2013-06-30 - 2013-07-05; in "Proceedings of the International Conference on Materials for Advanced Technologies (ICMAT 2013)", (2013), 8. BibTeX

32. R. Orio, S. Selberherr:
"Physically Based Models of Electromigration";
Talk: Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong; (invited) 2013-06-03 - 2013-06-05; in "Proceedings of the International Conference on Electron Devices and Solid-State Circuits (EDSSC)", (2013), 290, 1 - 2. BibTeX

31. R. Orio, S. Selberherr:
"Formation and Movement of Voids in Copper Interconnect Structures";
Talk: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Xi'an, China; (invited) 2012-10-29 - 2012-11-01; in "Proceedings of the International Conference on Solid-State and Integrated Circuit Technology (ICSICT)", (2012), ISBN: 978-1-4673-2475-5, 378 - 381 doi:10.1109/ICSICT.2012.6467675. BibTeX

30. R. Orio, H. Ceric, S. Selberherr:
"Electromigration Failure in a Copper Dual-Damascene Structure with a Through Silicon Via";
Poster: 23rd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, Cagliari, Italy; 2012-10-01 - 2012-10-05; in "Proceedings of the 23rd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2012), 1981 - 1986. BibTeX

29. H. Ceric, R. Orio, S. Selberherr:
"TCAD Study of Electromigration Failure Modes in Sn-Based Solder Bumps";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 2012-09-05 - 2012-09-07; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2, 264 - 267. BibTeX

28. R. Orio, H. Ceric, S. Selberherr:
"Modeling of Electromigration Induced Resistance Change in Three-Dimensional Interconnects with Through Silicon Vias";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 2012-09-05 - 2012-09-07; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2, 268 - 271. BibTeX

27. R. Orio, H. Ceric, S. Selberherr:
"Analysis of Resistance Change Development due to Voiding in Copper Interconnects ended by a Through Silicon Via";
Talk: International Symposium on Microelectronics Technology and Devices (SBMicro), Brasilia, Brazil; 2012-08-30 - 2012-09-02; in "ECS Transactions", (2012), 1, ISBN: 978-1-56677-990-6, 273 - 280 doi:10.1149/04901.0273ecst. BibTeX

26. H. Ceric, R. Orio, W. H. Zisser, S. Selberherr:
"Ab Initio Method for Electromigration Analysis";
Talk: IEEE Electronics Packaging Technology Conference (EPTC), Singapore; 2012-07-02 - 2012-07-06; in "Proceedings of the 19th IEEE International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2012), ISBN: 978-1-4673-0982-0, 4 page(s) doi:10.1109/IPFA.2012.6306306. BibTeX

25. H. Ceric, R. Orio, S. Selberherr:
"Atomistic Method for Analysis of Electromigration";
Poster: IEEE International Interconnect Technology Conference (IITC), San Jose, USA; 2012-06-04 - 2012-06-06; in "Proceedings of the IEEE International Interconnect Technology Conference", (2012), ISBN: 978-1-4673-1137-3, 3 page(s) . BibTeX

24. H. Ceric, R. Orio, W. H. Zisser, V. Schnitzer, S. Selberherr:
"Modeling of Microstructural Effects on Electromigration Failure";
Talk: International Workshop on Stress-Induced Phenomena in Microelectronics, Kyoto, Japan; (invited) 2012-05-28 - 2012-05-30; in "Abstracts of 12th International Workshop on Stress-Induced Phenomena in Microelectronics", (2012), 50 - 51. BibTeX

23. R. Orio, S. Selberherr:
"Compact Modeling of Interconnect Reliability";
Talk: Conference on Electron Devices and Solid-State Circuits (EDSSC), Tianjin, China; (invited) 2011-11-17 - 2011-11-18; in "Proc. IEEE Conference on Electron Devices and Solid-State Circuits EDSSC", (2011), ISBN: 978-1-4577-1998-1, 2 page(s) doi:10.1109/EDSSC.2011.6117564. BibTeX

22. S. E. Tyaginov, I. Starkov, H. Enichlmair, C. Jungemann, J.M. Park, E. Seebacher, R. Orio, H. Ceric, T. Grasser:
"An Analytical Approach for Physical Modeling of Hot-Carrier Induced Degradation";
Talk: 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, Bordeaux, France; 2011-10-03 - 2011-10-07; in "Proceedings of the 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2011), 51, 1525 - 1529. BibTeX

21. H. Ceric, R. Orio, F. Schanovsky, W. H. Zisser, S. Selberherr:
"Multilevel Simulation for the Investigation of Fast Diffusivity Paths";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 135 - 138 doi:10.1109/SISPAD.2011.6035068. BibTeX

20. R. Orio, H. Ceric, S. Selberherr:
"A Compact Model for Early Electromigration Lifetime Estimation";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 23 - 26 doi:10.1109/SISPAD.2011.6035040. BibTeX

19. R. Orio, H. Ceric, S. Selberherr:
"Modeling Electromigration Lifetimes of Copper Interconnects";
Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Joao Pessoa, Brazil; 2011-08-30 - 2011-09-02; in "ECS Transactions", (2011), ISBN: 978-1-56677-900-5, 163 - 169 doi:10.1149/1.3615190. BibTeX

18. H. Ceric, R. Orio, S. Selberherr:
"Integration of Atomistic and Continuum-Level Electromigration Models";
Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Incheon, South Korea; 2011-07-04 - 2011-07-07; in "IPFA 2011 Proceedings", (2011), ISBN: 978-1-4577-0159-7, 4 page(s) doi:10.1109/IPFA.2011.5992749. BibTeX

17. H. Ceric, R. Orio, S. Selberherr:
"Interconnect Reliability Dependence on Fast Diffusivity Paths";
Talk: International Conference on Materials for Advanced Technologies (ICMAT), Suntec, Singapore; (invited) 2011-06-26 - 2011-07-01; in "Proceedings of the International Conference on Materials for Advanced Technologies (ICMAT 2011)", (2011), 33. BibTeX

16. H. Ceric, R. Orio, S. Selberherr:
"Impact of Parameter Variability on Electromigration Lifetime Distribution";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Bologna, Italy; 2010-09-06 - 2010-09-08; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2010), ISBN: 978-1-4244-7699-2, 217 - 220 doi:10.1109/SISPAD.2010.5604523. BibTeX

15. H. Ceric, R. Orio, S. Selberherr:
"Electromigration Anisotropy and Mechanical Stress in Modern Copper Interconnect";
Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2010-07-05 - 2010-07-09; in "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9, 167 - 170. BibTeX

14. R. Orio, H. Ceric, J. Cervenka, S. Selberherr:
"Electromigration Failure Development in Modern Dual-Damascene Interconnects";
Talk: International Conference on Very Large Scale Integration (VLSI-SoC), Florianopolis; 2009-10-12 - 2009-10-14; in "Proceedings of the International Conference on Very Large Scale Integration (VLSI-SoC)", (2009), 15, ISBN: 978-3-90188-237-1, 5 page(s) . BibTeX

13. H. Ceric, R. Orio, J. Cervenka, S. Selberherr:
"Copper Microstructure Impact on Evolution of Electromigration Induced Voids";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego, CA, USA; 2009-09-09 - 2009-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2009), ISBN: 978-1-4244-3947-8, 178 - 181 doi:10.1109/SISPAD.2009.5290222. BibTeX

12. R. Orio, H. Ceric, J. Cervenka, S. Selberherr:
"The Effect of Copper Grain Size Statistics on the Electromigration Lifetime Distribution";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego, CA, USA; 2009-09-09 - 2009-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2009), ISBN: 978-1-4244-3947-8, 182 - 185 doi:10.1109/SISPAD.2009.5290219. BibTeX

11. R. Orio, H. Ceric, J. Cervenka, S. Selberherr:
"The Effect of Microstructure on Electromigration-Induced Failure Development";
Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Natal; 2009-08-31 - 2009-09-03; in "ECS Transactions", (2009), ISBN: 978-1-56677-737-7, 345 - 352. BibTeX

10. H. Ceric, R. Orio, J. Cervenka, S. Selberherr:
"The Effect of Microstructure on Electromigration Induced Voids";
Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou; 2009-07-06 - 2009-07-10; in "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2009), ISBN: 9781-4244-3912-6, 694 - 697. BibTeX

9. R. Orio, H. Ceric, J. Cervenka, S. Selberherr:
"The Effect of Microstructure on the Electromigration Lifetime Distribution";
Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou; 2009-07-06 - 2009-07-10; in "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA2009)", (2009), 731 - 734. BibTeX

8. H. Ceric, R. Orio, J. Cervenka, S. Selberherr:
"Stress-Induced Anisotropy of Electromigration in Copper Interconnects";
Talk: International Workshop on Stress-Induced Phenomena in Metallization, Austin; 2008-11-05 - 2008-11-07; in "Proceedings of the Stress-Induced Phenomena in Metallization: 10th International Workshop", (2008), ISBN: 978-0-7354-0680-3, 56 - 62. BibTeX

7. H. Ceric, R. Orio, J. Cervenka, S. Selberherr:
"Analysis of Microstructure Impact on Electromigration";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 2008-09-09 - 2008-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7, 241 - 244 doi:10.1109/SISPAD.2008.4648282. BibTeX

6. R. Orio, H. Ceric, S. Carniello, S. Selberherr:
"Analysis of Electromigration in Redundant Vias";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 2008-09-09 - 2008-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7, 237 - 240 doi:10.1109/SISPAD.2008.4648281. BibTeX

5. R. Orio, S. Carniello, H. Ceric, S. Selberherr:
"Analysis of Electromigration in Dual-Damascene Interconnect Structures";
Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Gramado; 2008-09-01 - 2008-09-04; in "ECS Transactions", (2008), ISBN: 978-1-56677-646-2, 337 - 348. BibTeX

4. H. Ceric, R. Orio, J. Cervenka, S. Selberherr:
"TCAD Solutions for Submicron Copper Interconnect";
Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2008-07-07 - 2008-07-11; in "Proceedings 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2008), ISBN: 978-1-4244-2039-1, 78 - 81. BibTeX

3. H. Ceric, R. Orio, S. Selberherr:
"Comprehensive Modeling of Electromigration Induced Interconnect Degradation Mechanisms";
Talk: International Conference on Microelectronics (MIEL), Nis; (invited) 2008-05-11 - 2008-05-14; in "Proceedings of the International Conference on Microelectronics (MIEL)", (2008), ISBN: 978-1-4244-1881-7, 69 - 76 doi:10.1109/ICMEL.2008.4559225. BibTeX

2. R. Orio, H. Ceric, S. Selberherr:
"Strain-Induced Anisotropy of Electromigration in Copper Interconnect";
Talk: International Semiconductor Device Research Symposium (ISDRS), Maryland; 2007-12-12 - 2007-12-14; in "2007 International Semiconductor Device Research Symposium", (2007), ISBN: 978-1-4244-1892-3, 2 page(s) . BibTeX

1. R. Orio, H. Ceric, S. Selberherr:
"Effect of Strains on Anisotropic Material Transport in Copper Interconnect Structures under Electromigration Stress";
Poster: International Workshop on Computational Electronics (IWCE), Amherst, MA, USA; 2007-10-08 - 2007-10-10; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2007), 62 - 63. BibTeX


Talks and Poster Presentations (without Proceedings-Entry)


3. J. Ender, R. Orio, S. Fiorentini, W. Goes, V. Sverdlov:
"Large-Scale Finite Element Micromagnetics Simulations using Open Source Software";
Poster: European Materials Research Society (EMRS), Warsaw, Poland; 2019-09-16 - 2019-09-19; . BibTeX

2. S. Fiorentini, R. Orio, W. Goes, J. Ender, V. Sverdlov:
"Comprehensive Comparison of Switching Models for Perpendicular Spin Transfer Torque MRAM Cells";
Poster: European Materials Research Society (EMRS), Warsaw, Poland; 2019-09-16 - 2019-09-19; . BibTeX

1. R. Orio, H. Ceric, S. Selberherr:
"A Compact Model for Early Electromigration Failures of Copper Dual-Damascene Interconnects";
Talk: 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, Bordeaux, France; 2011-10-03 - 2011-10-07; . BibTeX


Doctor's Theses (authored and supervised)


1. R. Orio:
"Electromigration Modeling and Simulation";
Reviewer: S. Selberherr, J. W. Swart; Institut für Mikroelektronik, 2010, oral examination: 2010-06-04. BibTeX


Scientific Reports


2. O. Baumgartner, O. Ertl, R. Orio, P.-J. Wagner, T. Windbacher, S. Selberherr:
"VISTA Status Report December 2009";
(2009), 35 page(s) . BibTeX

1. H. Ceric, T. Grasser, R. Orio, M. Pourfath, M. Vasicek, S. Selberherr:
"VISTA Status Report July 2008";
(2008), 38 page(s) . BibTeX

Institute for Microelectronics
Head: Univ. Prof. Dipl.-Ing. Dr. techn. Tibor Grasser
Deputy Head: O. Univ. Prof. Dipl.-Ing. Dr. techn. Dr.h.c. Siegfried Selberherr
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