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Publications Vassil Palankovski

156 records


Books and Editorships

1. V. Palankovski, R. Quay:
"Analysis and Simulation of Heterostructure Devices";
S. Selberherr (ed); Springer-Verlag, Wien - New York, (2004), ISBN: 978-3-7091-7193-6, 309 page(s) doi:10.1007/978-3-7091-0560-3. BibTeX

Publications in Scientific Journals

31. A. Axelevitch, V. Palankovski, S. Selberherr, G. Golan:
"Investigation of Novel Silicon PV Cells of a Lateral Type";
Silicon, 7, (2015), 283 - 291 doi:10.1007/s12633-014-9227-x. BibTeX
30. V. Palankovski, S. Vainshtein, V. Yuferev, J. Kostamovaara, V. Egorkin:
"Effect of Hot-Carrier Energy Relaxation on Main Properties of Collapsing Field Domains in Avalanching GaAs";
Applied Physics Letters, 106, (2015), 183505-1 - 183505-5 doi:10.1063/1.4921006. BibTeX
29. M. Molnar, D. Donoval, J. Kuzmik, J. Marek, A. Chvala, P. Pribytny, V. Mikolasek, K. Rendek, V. Palankovski:
"Simulation Study of Interface Traps and Bulk Traps in n++GaN/InAlN/AlN/GaN High Electron Mobility Transistors";
Applied Surface Science, 312, (2014), 157 - 161 doi:10.1016/j.apsusc.2014.04.078. BibTeX
28. M. Tapajna, N. Killat, V. Palankovski, D. Gregusova, K. Cico, J. Carlin, N. Grandjean, M. Kuball, J. Kuzmik:
"Hot-Electron-Related Degradation in InAlN/GaN High-Electron-Mobility Transistors";
IEEE Transactions on Electron Devices, 61, (2014), 2793 - 2801 doi:10.1109/TED.2014.2332235. BibTeX
27. M. Jurkovic, D. Gregusova, V. Palankovski, S. Hascik, M. Blaho, K. Cico, K. Frohlich, J. Carlin, N. Grandjean, J. Kuzmik:
"Schottky-Barrier Normally Off GaN/InAlN/AlN/GaN HEMT With Selectively Etched Access Region";
IEEE Electron Device Letters, 34, (2013), 432 - 434 doi:10.1109/LED.2013.2241388. BibTeX
26. J. Kuzmik, S. Vitanov, C. Dua, J. Carlin, C. Ostermaier, A. Alexewicz, G. Strasser, D. Pogany, E. Gornik, N. Grandjean, S. Delage, V. Palankovski:
"Buffer-Related Degradation Aspects of Single and Double-Heterostructure Quantum Well InAlN/GaN High-Electron-Mobility Transistors";
Japanese Journal of Applied Physics, 51, (2012), 054102-1 - 054102-5 doi:10.1143/JJAP.51.054102. BibTeX
25. S. Vitanov, V. Palankovski, S. Maroldt, R. Quay, S. Murad, T. Rödle, S. Selberherr:
"Physics-Based Modeling of GaN HEMTs";
IEEE Transactions on Electron Devices, 59, (2012), 685 - 693 doi:10.1109/TED.2011.2179118. BibTeX
24. A. Garcia-Barrientos, V. Palankovski:
"Numerical Simulations of Amplification of Space Charge Waves in n-InP Films";
Materials Science and Engineering B, 176, (2011), 1368 - 1372 doi:10.1016/j.mseb.2011.02.014. BibTeX
23. A. Garcia-Barrientos, V. Palankovski:
"Numerical Simulations of Space Charge Waves in InP Films and Microwave Frequency Conversion under Negative Differential Conductivity";
Applied Physics Letters, 98, (2011), 072110-1 - 072110-3 doi:10.1063/1.3555467. BibTeX
22. S. Maroldt, D. Wiegner, S. Vitanov, V. Palankovski, R. Quay, O. Ambacher:
"Efficient AlGaN/GaN Linear and Digital-Switch-Mode Power Amplifiers for Operation at 2 GHz";
IEICE Transactions on Electronics, E93-C, (2010), 1238 - 1244. BibTeX
21. S. Vitanov, V. Palankovski, S. Maroldt, R. Quay:
"High-Temperature Modeling of AlGaN/GaN HEMTs";
Solid-State Electronics, 54, (2010), 1105 - 1112 doi:10.1016/j.sse.2010.05.026. BibTeX
20. A. Garcia-Barrientos, V. Grimalsky, E. Gutierrez-Dominguez, V. Palankovski:
"Nonstationary Effects of the Space Charge in Semiconductor Structures";
Journal of Applied Physics, 105, (2009), 074501-1 - 074501-6 doi:10.1063/1.3093689. BibTeX
19. S. Vainshtein, V. Yuferev, V. Palankovski, D. Ong, J. Kostamovaara:
"Negative Differential Mobility in GaAs at Ultrahigh Fields: Comparison between an Experiment and Simulations";
Applied Physics Letters, 92, (2008), 062114-1 - 062114-3 doi:10.1063/1.2870096. BibTeX
18. S. Vitanov, V. Palankovski:
"Normally-Off AlGaN/GaN HEMTs with InGaN cap layer: A simulation study";
Solid-State Electronics, 52, (2008), 1791 - 1795 doi:10.1016/j.sse.2008.07.011. BibTeX
17. M. Nedjalkov, D. Vasileska, E. Atanassov, V. Palankovski:
"Ultrafast Wigner Transport in Quantum Wires";
Journal of Computational Electronics, 6, (2007), 235 - 238 doi:10.1007/s10825-006-0101-y. BibTeX
16. M. Nedjalkov, D. Vasileska, D.K. Ferry, C. Jacoboni, Ch. Ringhofer, I. Dimov, V. Palankovski:
"Wigner Transport Models of the Electron-Phonon Kinetics in Quantum Wires";
Physical Review B, 74, (2006), 035311-1 - 035311-18 doi:10.1103/PhysRevB.74.035311. BibTeX
15. S. Dhar, H. Kosina, V. Palankovski, E. Ungersböck, S. Selberherr:
"Electron Mobility Model for Strained-Si Devices";
IEEE Transactions on Electron Devices, 52, (2005), 527 - 533 doi:10.1109/TED.2005.844788. BibTeX
14. V. Palankovski, G. Röhrer, T. Grasser, S. Smirnov, H. Kosina, S. Selberherr:
"Rigorous Modeling Approach to Numerical Simulation of SiGe HBTs";
Applied Surface Science, 224, (2004), 361 - 364 doi:10.1016/j.apsusc.2003.09.034. BibTeX
13. V. Palankovski, S. Selberherr:
"Critical Modeling Issues of SiGe Semiconductor Devices";
Journal of Telecommunications and Information Technology, 4, (invited) (2004), 15 - 25. BibTeX
12. V. Palankovski, S. Selberherr:
"Rigorous Modeling of High-Speed Semiconductor Devices";
Microelectronics Reliability, 44, (invited) (2004), 889 - 897 doi:10.1016/j.microrel.2004.02.009. BibTeX
11. V. Palankovski, S. Selberherr:
"The State-of-the-Art in Simulation for Optimization of SiGe-HBTs";
Applied Surface Science, 224, (2004), 312 - 319 doi:10.1016/j.apsusc.2003.09.036. BibTeX
10. S. Wagner, V. Palankovski, G. Röhrer, T. Grasser, S. Selberherr:
"Direct Extraction Feature for Scattering Parameters of SiGe-HBTs";
Applied Surface Science, 224, (2004), 365 - 369 doi:10.1016/j.apsusc.2003.09.035. BibTeX
9. V. Palankovski, N. Belova, T. Grasser, H. Puchner, S. Aronowitz, S. Selberherr:
"A Methodology for Deep Sub-0.25µm CMOS Technology Prediction";
IEEE Transactions on Electron Devices, 48, (2001), 2331 - 2336 doi:10.1109/16.954473. BibTeX
8. V. Palankovski, R. Quay, S. Selberherr:
"Industrial Application of Heterostructure Device Simulation";
IEEE Journal of Solid-State Circuits, 36, (invited) (2001), 1365 - 1370 doi:10.1109/4.944664. BibTeX
7. V. Palankovski, R. Schultheis, A. Bonacina, S. Selberherr:
"Effectiveness of Silicon Nitride Passivation in III-V Based Heterojunction Bipolar Transistors";
Radiation Effects and Defects in Solids, 156, (2001), 261 - 265 doi:10.1080/10420150108216903. BibTeX
6. V. Palankovski, R. Schultheis, S. Selberherr:
"Simulation of Power Heterojunction Bipolar Transistors on Gallium Arsenide";
IEEE Transactions on Electron Devices, 48, (2001), 1264 - 1269 doi:10.1109/16.925258. BibTeX
5. V. Palankovski, S. Selberherr:
"Micro Materials Modeling in MINIMOS-NT";
Microsystem Technologies - Micro- and Nanosystems - Information Storage and Processing Systems, 7, (2001), 183 - 187 doi:10.1007/s005420000076. BibTeX
4. R. Quay, K. Hess, R. Reuter, M. Schlechtweg, T. Grave, V. Palankovski, S. Selberherr:
"Nonlinear Electronic Transport and Device Performance of HEMTs";
IEEE Transactions on Electron Devices, 48, (2001), 210 - 217 doi:10.1109/16.902718. BibTeX
3. R. Quay, C. Moglestue, V. Palankovski, S. Selberherr:
"A Temperature Dependent Model for the Saturation Velocity in Semiconductor Materials";
Materials Science in Semiconductor Processing, 3, (2000), 149 - 155 doi:10.1016/S1369-8001(00)00015-9. BibTeX
2. B. Gonzalez, V. Palankovski, H. Kosina, A. Hernandez, S. Selberherr:
"An Energy Relaxation Time Model for Device Simulation";
Solid-State Electronics, 43, (1999), 1791 - 1795 doi:10.1016/S0038-1101(99)00132-X. BibTeX
1. V. Palankovski, G. Kaiblinger-Grujin, S. Selberherr:
"Study of Dopant-Dependent Band Gap Narrowing in Compound Semiconductor Devices";
Materials Science and Engineering B, 66, (1999), 46 - 49 doi:10.1016/S0921-5107(99)00118-X. BibTeX

Contributions to Books

9. V. Palankovski, G. Donnarumma, J. Kuzmik:
"Degradation Study of Single and Double-Heterojunction InAlN/GaN HEMTs by Two-Dimensional Simulation";
in "Gallium Nitride and Silicon Carbide Power Technologies 2, Vol. 50, No. 3", issued by The Electrochemical Society; R. Garg, K. Shenai (ed); ECS Transactions, 2012, ISBN: 978-1-60768-351-3, 223 - 228 doi:10.1149/05003.0223ecst. BibTeX
8. V. Palankovski, J. Kuzmik:
"A Promising New n++-GaN/InAlN/GaN HEMT Concept for High-Frequency Applications";
in "Gallium Nitride and Silicon Carbide Power Technologies 2, Vol. 50, No. 3", issued by The Electrochemical Society; R. Garg, K. Shenai (ed); ECS Transactions, 2012, ISBN: 978-1-60768-351-3, 291 - 296 doi:10.1149/05003.0291ecst. BibTeX
7. V. Palankovski, M. Wagner, W. Heiss:
"Monte Carlo Simulation of Electron Transport in PbTe";
in "Narrow Gap Semiconductors 2007, Springer Proceedings in Physics", 119, B. Murdin, S. Clowes (ed); Springer Netherlands, 2008, ISBN: 978-1-4020-8424-9, 77 - 79 doi:10.1007/978-1-4020-8425-6_19. BibTeX
6. S. Vitanov, V. Palankovski:
"Monte Carlo Study of Transport Properties of InN";
in "Narrow Gap Semiconductors 2007, Springer Proceedings in Physics", 119, B. Murdin, S. Clowes (ed); Springer Netherlands, 2008, ISBN: 13978-1-4020-8424-9, 97 - 100 doi:10.1007/978-1-4020-8425-6_24. BibTeX
5. S. Vitanov, M. Nedjalkov, V. Palankovski:
"A Monte Carlo Model of Piezoelectric Scattering in GaN";
in "Numerical Methods and Applications, Lecture Notes in Computer Science", 4310, T. Boyanov, S. Dimova, K. Georgiev, G. Nikolov (ed); Springer-Verlag, Berlin-Heidelberg, 2007, ISBN: 978-3-540-70940-4, 197 - 204 doi:10.1007/978-3-540-70942-8_23. BibTeX
4. S. Vitanov, V. Palankovski, R. Quay, E. Langer:
"Modeling of Electron Transport in GaN-Based Materials and Devices";
in "AIP Conference Proceedings, Vol. 893", American Institute of Physics, 2007, ISBN: 978-0-7354-0397-0, 1399 - 1400. BibTeX
3. T.V. Gurov, E. Atanassov, I. Dimov, V. Palankovski:
"Femtosecond Evolution of Spatially Inhomogeneous Carrier Excitations Part II: Stochastic Approach and Grid Implementation";
in "Large-Scale Scientific Computing, Lecture Notes in Computer Science", 3743, I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer Berlin Heidelberg, 2006, ISBN: 3-540-31994-8, 157 - 163 doi:10.1007/11666806_16. BibTeX
2. M. Nedjalkov, T.V. Gurov, H. Kosina, D. Vasileska, V. Palankovski:
"Femtosecond Evolution of Spatially Inhomogeneous Carrier Excitations Part I: Kinetic Approach";
in "Large-Scale Scientific Computing, Lecture Notes in Computer Science", 3743, I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer Berlin Heidelberg, 2006, ISBN: 3-540-31994-8, 149 - 156 doi:10.1007/11666806_15. BibTeX
1. M. Wagner, G. Span, S. Holzer, V. Palankovski, O. Triebl, T. Grasser:
"Power Output Improvement of Silicon-Germanium Thermoelectric Generators";
in "SiGe and Ge: Materials, Processing, and Devices, Vol. 3, No. 7", issued by The Electrochemical Society; ECS Transactions, 2006, ISBN: 1-56677-507-8, 1151 - 1162 doi:10.1149/1.2355909. BibTeX

Talks and Poster Presentations (with Proceedings-Entry)

102. M. Molnar, V. Palankovski, D. Donoval, J. Kuzmik, J. Kovac, A. Chvala, J. Marek, P. Pribytny, S. Selberherr:
"Modeling and Characterization of InAlN/GaN HEMTs at Elevated Temperatures";
Talk: International Conference on Advances in Electronic and Photonic Technologies, High Tatras, Spa Novy Smokovec, Slovakia; 2013-06-02 - 2013-06-05; in "Proceedings of ADEPT International Conference on Advances in Electronic and Photonic Technologies", (2013), ISBN: 978-80-554-0689-3, 48 - 51. BibTeX
101. M. Molnar, V. Palankovski, D. Donoval, J. Kuzmik, J. Kovac, A. Chvala, J. Marek, P. Pribytny, S. Selberherr:
"Characterization of InAlN/GaN HEMTs at Elevated Temperatures Supported by Numerical Simulation";
Talk: Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Warnemunde, Germany; 2013-05-26 - 2013-05-29; in "Proceedings of the Workshop on Compound Semiconductor Devices and Integrated Circuits", (2013), ISBN: 978-3-00-041435-0, 135 - 136. BibTeX
100. M. Molnar, G. Donnarumma, V. Palankovski, J. Kuzmik, D. Donoval, J. Kovac, S. Selberherr:
"Electrothermal Analysis of In0.12Al0.88N/GaN HEMTs";
Talk: International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM), Smolenice, Slovakia; 2012-11-11 - 2012-11-15; in "Proceedings of the 9th International ASDAM", (2012), ISBN: 978-1-4673-1195-3, 55 - 58 doi:10.1109/ASDAM.2012.6418556. BibTeX
99. M. Jurkovic, D. Gregusova, S. Hascik, M. Blaho, K. Cico, V. Palankovski, J. Carlin, N. Grandjean, J. Kuzmik:
"Polarization Engineered Normally-Off GaN/InlN/AlN/GaN HEMT";
Talk: International Workshop on Nitride Semiconductors 2012 (INW), Sapporo, Japan; 2012-10-14 - 2012-10-19; in "International Workshop on Nitride Semiconductors", (2012), 2 page(s) . BibTeX
98. V. Palankovski, J. Kuzmik:
"A Promising New n++-GaN/InAlN/GaN HEMT Concept for High-Frequency Applications";
Talk: Honolulu PRiME 2012, Honolulu, USA; 2012-10-07 - 2012-10-12; in "ECS Meeting Abstracts", (2012), MA2012-02, 1 page(s) . BibTeX
97. V. Palankovski, J. Kuzmik:
"Degradation Study of Single and Double-Heterojunction InAlN/GaN HEMTs by Two-Dimensional Simulation";
Talk: Honolulu PRiME 2012, Honolulu, USA; 2012-10-07 - 2012-10-12; in "ECS Meeting Abstracts", (2012), MA2012-02, 1 page(s) . BibTeX
96. G. Donnarumma, V. Palankovski, S. Selberherr:
"Influence of Bandgap Narrowing and Carrier Lifetimes on the Forward Current-Voltage Characteristics of a 4H-SiC p-i-n Diode";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 2012-09-05 - 2012-09-07; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2, 125 - 128. BibTeX
95. I. Serrano-Lopez, A. Garcia-Barrientos, V. Palankovski, L. del Carmen Cruz-Netro:
"Non-Stationary Effects of Space Charge in InN Films";
Talk: International Materials Research Congress, Cancun, Mexico; 2012-08-12 - 2012-08-17; in "XXI International Materials Research Congress", (2012), 1 page(s) . BibTeX
94. M. Molnar, G. Donnarumma, V. Palankovski, J. Kuzmik, D. Donoval, J. Kovac, S. Selberherr:
"Characterization, Modeling and Simulation of In0.12Al0.88N/GaN HEMTs";
Talk: Applied Physics of Condensed Matter (APCOM), High Tatras, Slovakia; 2012-06-20 - 2012-06-22; in "Proceedings of the 18th International Conference in the Series of the Solid State Workshops", (2012), 190 - 194. BibTeX
93. M. Jurkovic, D. Gregusova, S. Hascik, M. Blaho, M. Molnar, V. Palankovski, D. Donoval, J. Carlin, N. Grandjean, J. Kuzmik:
"GaN/InAlN/AlN/GaN Normally-Off HEMT with Etched Access Region";
Talk: Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Porquerolles, France; 2012-05-30 - 2012-06-01; in "Proceedings of the 36th Workshop on Compound Semiconductor Devices and Integrated Circuits", (2012), 2 page(s) . BibTeX
92. S. Vitanov, J. Kuzmik, V. Palankovski:
"Normally-Off InAlN/GaN HEMTs with n++ GaN Cap Layer: A Simulation Study";
Talk: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 2011-12-07 - 2011-12-09; in "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3, 2 page(s) doi:10.1109/ISDRS.2011.6135161. BibTeX
91. S. Vitanov, J. Kuzmik, V. Palankovski:
"Study of the Conduction Properties of the n++ GaN Cap Layer in GaN/InAlN/GaN E-HEMTs";
Talk: International Scientific and Applied Science Conference on Electronics, Sozopol, Bulgaria; 2011-09-14 - 2011-09-16; in "Annual Journal of Electronics", (2011), 113 - 116. BibTeX
90. G. R. Aloise, S. Vitanov, V. Palankovski:
"Temperature Dependence of the Transport Properties of InN";
Talk: Microtherm 2011, Lodz, Poland; 2011-06-28 - 2011-07-01; in "Official Proceedings of Microtherm 2011", (2011), ISBN: 978-83-932197-0-4, 6 page(s) . BibTeX
89. G. R. Aloise, S. Vitanov, V. Palankovski:
"Performance Study of Nitride-Based Gunn Diodes";
Talk: Nanotech 2011, Boston, USA; 2011-06-13 - 2011-06-16; in "Technical Proceedings of the 2011 NSTI Nanotechnology Conference & Expo - Nanotech 2011", (2011), ISBN: 978-1-4398-7139-3, 4 page(s) . BibTeX
88. S. Vitanov, V. Palankovski:
"Electron Mobility Models for III-Nitrides";
Talk: International Scientific and Applied Science Conference (ET), Sozopol; 2010-09-22 - 2010-09-24; in "Annual Journal of Electronics", (2010), ISSN: 1313-1842, 18 - 21. BibTeX
87. S. Vitanov, V. Palankovski, S. Maroldt, R. Quay:
"Non-Linearity of Transconductance and Source-Gate Resistance of HEMTs";
Poster: European Solid-State Device Research Conference (ESSDERC), Sevilla; 2010-09-14 - 2010-09-16; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2010), ISBN: 978-84-693-6437-6, 4 page(s) . BibTeX
86. S. Vitanov, V. Palankovski, S. Selberherr:
"Hydrodynamic Models for GaN-Based HEMTs";
Poster: European Solid-State Device Research Conference (ESSDERC), Sevilla; 2010-09-14 - 2010-09-16; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2010), ISBN: 978-84-693-6437-6, 4 page(s) . BibTeX
85. A. Garcia-Barrientos, V. Palankovski:
"Amplification of Space Charge Waves in n-InP Films";
Talk: 7th International Conference on Electrical Engineering, Computing, Science and Automatic Control (CCE 2010), Chiapas, Mexico; 2010-09-08 - 2010-09-10; in "Proceedings of the 7th International Conference on Electrical Engineering, Computing, Science and Automatic Control (CCE 2010)", (2010), ISBN: 978-1-4244-7314-4, 613 - 616 doi:10.1109/ICEEE.2010.5608605. BibTeX
84. A. Garcia-Barrientos, V. Palankovski, V. Grimalsky:
"Amplification of Space Charge Waves at Very High Electric Fields in GaAs Films";
Talk: International Conference on Microelectronics (MIEL), Nis; 2010-05-16 - 2010-05-19; in "Proceedings of the International Conference on Microelectronics (MIEL)", (2010), ISBN: 978-1-4244-7198-0, 161 - 164 doi:10.1109/MIEL.2010.5490510. BibTeX
83. S. Vitanov, V. Palankovski:
"High-Temperature Small-Signal Analysis of AlGaN/GaN HEMTs";
Poster: Junior Scientist Conference 2010 (JSC 2010), Wien; 2010-04-07 - 2010-04-09; in "Proceedings of the Junior Scientist Conference", (2010), ISBN: 978-3-200-01797-9, 59 - 60. BibTeX
82. S. Vainshtein, V. Yuferev, J. Kostamovaara, V. Palankovski:
"Collapsing Field Domains in Avalanche GaAs Transistors: Peculiar Phenomenon and Prospective Applications";
International Scientific and Applied Science Conference (ET), Sozopol, Bulgaria; (invited) 2009-09-22 - 2009-09-24; in "Annual Journal of Electronics", (2010), 4, ISSN: 1313-1842, 12 - 17. BibTeX
81. S. Vitanov, V. Palankovski, S. Maroldt, R. Quay:
"High-Temperature Modeling of AlGaN/GaN HEMTs";
Talk: International Semiconductor Device Research Symposium (ISDRS), Maryland; 2009-12-09 - 2009-12-11; in "2009 International Semiconductor Device Research Symposium", (2009), ISBN: 978-1-4244-6031-1, 2 page(s) doi:10.1109/ISDRS.2009.5378300. BibTeX
80. S. Vitanov, V. Palankovski, S. Maroldt, R. Quay:
"A Simulation Study of Enhancement-Mode AlGaN/GaN HEMTs with Recessed Gates";
Talk: European Workshop on Heterostructure Technology, Guenzburg/Ulm; 2009-11-02 - 2009-11-04; in "HETECH 2009 Book of Abstracts", (2009), 109 - 110. BibTeX
79. S. Vitanov, V. Palankovski:
"Influence of the Gate Recess on the Performance of Enhancement-Mode AlGaN/GaN HEMTs";
Talk: International Scientific and Applied Science Conference (ET), Sozopol; 2009-09-14 - 2009-09-17; in "Annual Journal of Electronics", (2009), ISSN: 1313-1842, 144 - 147. BibTeX
78. V. Palankovski:
"Novel High-Performance GaN Transistors";
Talk: Advanced Heterostructures and Nanostructures Workshop (AHNW), Kona; (invited) 2008-12-07 - 2008-12-12; in "Abstracts Advanced Heterostructures and Nanostructures Workshop (AHNW)", (2008), MO-03. BibTeX
77. S. Vitanov, V. Palankovski:
"Enhancement Mode HEMTs: Evaluation of Two Approaches by Numerical Simulation";
Talk: Junior Scientist Conference 2008, Technische Universität Wien; 2008-11-17 - 2008-11-18; in "Junior Scientist Conference Proceedings", (2008), ISBN: 978-3-200-01612-5, 221 - 222. BibTeX
76. S. Vitanov, V. Palankovski, G. Pozzovivo, J. Kuzmik, R. Quay:
"Systematical Study of InAlN/GaN Devices by Numerical Simulation";
Talk: European Workshop on Heterostructure Technology, Venice; 2008-11-03 - 2008-11-05; in "HETECH 2008 Book of Abstracts", (2008), ISBN: 978-88-6129-296-3, 159 - 160. BibTeX
75. S. Vitanov, V. Palankovski:
"Simulation of AlGaN/GaN HEMTs with InGaN Cap Layer";
Talk: International Scientific and Applied Science Conference (ET), Sozopol; 2008-09-24 - 2008-09-26; in "The Seventeenth International Scientific and Applied Science Conference Electronics ET'2008 Proceedings of the Conference Book 4", (2008), ISSN: 1313-1842, 67 - 70. BibTeX
74. S. Vitanov, P. Vitanov, V. Palankovski:
"Two-Dimensional Numerical Optimization of MIS Solar Cell on N-Type Silicon";
Poster: European Photovoltaic Solar Energy Conference, Valencia; 2008-09-01 - 2008-09-05; in "23rd European Photovoltaic Solar Energy Conference", (2008), 1743 - 1745. BibTeX
73. S. Vitanov, V. Palankovski:
"Normally-Off AlGaN/GaN HEMTs with InGaN Cap Layer: A Theoretical Study";
Poster: International Semiconductor Device Research Symposium (ISDRS), Maryland; 2007-12-12 - 2007-12-14; in "2007 International Semiconductor Device Research Symposium", (2007), ISBN: 978-1-4244-1892-3, 2 page(s) doi:10.1109/ISDRS.2007.4422390. BibTeX
72. S. Vitanov, V. Palankovski, S. Murad, T. Rödle, R. Quay, S. Selberherr:
"Predictive Simulation of AlGaN/GaN HEMTs";
Talk: IEEE Compound Semiconductor IC Symposium (CSICS), Portland; 2007-10-14 - 2007-10-17; in "IEEE Compound Semiconductor Integrated Circuit Symposium Technical Digest 2007", (2007), ISBN: 1-4244-1022-3, 131 - 134 doi:10.1109/CSICS07.2007.31. BibTeX
71. S. Vitanov, V. Palankovski, S. Murad, T. Rödle, R. Quay, S. Selberherr:
"Hydrodynamic Modeling of AlGaN/GaN HEMTs";
Talk: T. Grasser, S. Selberherr (ed); International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 2007-09-25 - 2007-09-27; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2007), 12, ISBN: 978-3-211-72860-4, 273 - 276 doi:10.1007/978-3-211-72861-1_65. BibTeX
70. V. Palankovski, M. Wagner, W. Heiss:
"Monte Carlo Simulation of Electron Transport in PbTe";
Talk: International Conference on Narrow Gap Semiconductors, Guildford; 2007-07-08 - 2007-07-12; in "The 13thInternational Conference on Narrow Gap Semiconductors", (2007), 50. BibTeX
69. S. Vitanov, V. Palankovski:
"Monte Carlo Study of Transport Properties of InN";
Poster: International Conference on Narrow Gap Semiconductors, Guildford; 2007-07-08 - 2007-07-12; in "The 13th International Conference on Narrow Gap Semiconductors", (2007), 99. BibTeX
68. S. Vitanov, V. Palankovski, R. Quay, E. Langer:
"Modeling of Electron Transport in GaN-based Materials and Devices";
Poster: 28th International Conference on the Physics of Semiconductors, Wien; 2006-07-24 - 2006-07-28; in "28th International Conference on the Physics of Semiconductors", (2007), 244. BibTeX
67. V. Palankovski, S. Vitanov, R. Quay:
"Field-Plate Optimization of AlGaN/GaN HEMTs";
Talk: IEEE Compound Semiconductor IC Symposium (CSICS), San Antonio; 2006-11-12 - 2006-11-15; in "IEEE Compound Semiconductor Integrated Circuit Symposium Technical Digest", (2006), ISBN: 1-4244-0126-7, 107 - 110 doi:10.1109/CSICS.2006.319926. BibTeX
66. S. Vitanov, V. Palankovski, R. Quay, E. Langer:
"Two-Dimensional Numerical Simulation of AlGaN/GaN HEMTs";
Talk: Target Days (TARGET), Frascati; 2006-10-16 - 2006-10-18; in "TARGET Days 2006 Book of Proceedings", (2006), ISBN: 3-902477-07-5, 81 - 84. BibTeX
65. S. Dhar, E. Ungersböck, M. Nedjalkov, V. Palankovski:
"Monte Carlo Simulation of the Electron Mobility in Strained Silicon";
Talk: International Scientific and Applied Science Conference (ET), Sozopol; 2006-09-20 - 2006-09-22; in "The Fifteenth International Scientific and Applied Science Conference Electronics ET'2006 Proceedings of the Conference Book 2", (2006), ISBN: 954-438-565-7, 169 - 173. BibTeX
64. V. Palankovski, M. Hristov, P. Philippov:
"Two-Dimensional Physical AC-Simulation of GaAs HBTs";
Talk: International Scientific and Applied Science Conference (ET), Sozopol; 2006-09-20 - 2006-09-22; in "The Fifteenth International Scientific and Applied Science Conference Electronics ET'2006 Proceedings of the Conference Book 2", (2006), ISBN: 954-438-565-7, 164 - 168. BibTeX
63. P. Vitanov, S. Vitanov, V. Palankovski:
"Two-Dimensional Analysis of the Back-Side Contacts of Thin Silicon Solar Cells";
Poster: 21st European Photovoltaic Solar Energy Conference, Dresden; 2006-09-04 - 2006-09-08; in "21st European Photovoltaic Solar Energy Conference", (2006), ISBN: 3-936338-20-5, 1475 - 1478. BibTeX
62. S. Vitanov, M. Nedjalkov, V. Palankovski:
"A Monte Carlo Model of Piezoelectric Scattering in GaN";
Talk: International Conference on Numerical Methods and Applications (NM&A), Borovets; 2006-08-20 - 2006-08-24; in "Sixth International Conference on Numerical Methods and Applications Abstracts", (2006), B-75. BibTeX
61. P. Vitanov, N. LeQuang, A. Harizanova, O. Nichiporuk, T. Ivanova, S. Vitanov, V. Palankovski:
"New Surface Passivation and Local Contacts on the Backside for thin mc-Si Solar Cells";
Talk: World Renewable Energy Congress (WREC), Firenze; 2006-08-19 - 2006-08-25; in "World Renewable Energy Congress IX Book of Abstracts", (2006), ISBN: 978-0-08-045056-8, 564. BibTeX
60. M. Nedjalkov, D. Vasileska, E. Atanassov, V. Palankovski:
"Ultrafast Wigner Transport in Quantum Wires";
Poster: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 2006-05-25 - 2006-05-27; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1, 285 - 286. BibTeX
59. T.V. Gurov, E. Atanassov, M. Nedjalkov, V. Palankovski:
"Monte Carlo Method for Modeling of Electron Transport in Quantum Wires";
Talk: International Symposium on Mathematical Modeling (MATHMOD), Wien; 2006-02-08 - 2006-02-10; in "5th Mathmod Vienna Proceedings", (2006), ISBN: 3-901608-30-3, 13-1 - 13-8. BibTeX
58. V. Palankovski, A. Marchlewski, E. Ungersböck, S. Selberherr:
"Identification of Transport Parameters for Gallium Nitride Based Semiconductor Devices";
Talk: International Symposium on Mathematical Modeling (MATHMOD), Wien; 2006-02-08 - 2006-02-10; in "5th Mathmod Vienna Proceedings", (2006), ISBN: 3-901608-30-3, 14-1 - 14-9. BibTeX
57. T.V. Gurov, E. Atanasov, I. Dimov, V. Palankovski, S. Smirnov:
"Femtosecond Evolution of Spacially Inhomogeneous Carrier Excitations: Part II: Stochastic Approach and GRID Implementation";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol; 2005-06-06 - 2005-06-10; in "Book of Abstracts", (2005), 26 - 27. BibTeX
56. M. Nedjalkov, T.V. Gurov, H. Kosina, D. Vasileska, V. Palankovski:
"Femtosecond Evolution of Spatially Inhomogeneous Carrier Excitations: Part I: Kinetic Approach";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol; 2005-06-06 - 2005-06-10; in "Abstracts of the 5th International Conference on Large-Scale Scientific Computations", (2005), 46. BibTeX
55. G. Angelov, V. Palankovski, M. Hristov:
"Demonstration of a Slipstream Simulation Flow Including Device and Circuit Simulators";
Poster: ISSE 2005 - 28th International Spring Seminar on Electronics Technology, Wiener Neustadt; 2005-05-19 - 2005-05-22; in "ISSE 2005, 28th International Spring Seminar on Electronics Technology, Conference Program and Abstracts", (2005), 39, ISBN: 3-85133036-6, 110 - 111. BibTeX
54. G. Angelov, V. Palankovski, M. Hristov, P. Philippov:
"Demonstration of a Slipstream Simulation Flow Including Device and Circuit Simulators";
Poster: ISSE 2005 - 28th International Spring Seminar on Electronics Technology, Wiener Neustadt; 2005-05-19 - 2005-05-22; in "28th International Spring Seminar on Electronics Technology", (2005), ISBN: 0-7803-9324-4, 486 - 491 doi:10.1109/ISSE.2005.1491077. BibTeX
53. S. Dhar, H. Kosina, V. Palankovski, E. Ungersböck, S. Selberherr:
"A Physically-Based Electron Mobility Model for Strained Si Devices";
Talk: The Nanotechnology Conference and Trade Show, Anaheim; 2005-05-08 - 2005-05-12; in "NSTI Nanotech Technical Proceedings", (2005), Vol. 3 (CDROM ISBN 0-9767985-4-9), ISBN: 0-9767985-2-2, 13 - 16. BibTeX
52. V. Palankovski, S. Dhar, H. Kosina, S. Selberherr:
"Improved Carrier Transport in Strained Si/Ge Devices";
Talk: Asia Pacific Microwave Conference (APMC), New Delhi; (invited) 2004-12-15 - 2004-12-18; in "Asia Pacific Microwave Conference 2004, Abstracts and Proceedings (CDROM)", (2004), ISBN: 81-7764-722-9, 4 page(s) . BibTeX
51. S. Dhar, H. Kosina, V. Palankovski, E. Ungersböck, S. Selberherr:
"Modeling of Electron Mobility in Strained Si Devices";
Talk: Semiconductor Advances for Future Electronics (SAFE), Veldhoven, Netherlands; 2004-11-25 - 2004-11-26; in "Proceedings of SAFE 2004", (2004), ISBN: 90-73461-43-x, 793 - 796 doi:10.13140/2.1.1839.7126. BibTeX
50. V. Palankovski, S. Selberherr:
"Analysis of High Speed Heterostructure Devices";
Talk: International Conference on Microelectronics (MIEL), Nis; (invited) 2004-05-16 - 2004-05-19; in "Proceedings of the International Conference on Microelectronics (MIEL)", (2004), ISBN: 0-7803-8166-1, 115 - 122 doi:10.1109/ICMEL.2004.1314567. BibTeX
49. V. Palankovski, S. Selberherr:
"Numerical Simulation of Selected Semiconductor Devices";
Talk: International Spring Seminar on Electronics Technology (ISSE), Sofia; 2004-05-13 - 2004-05-16; in "Proceedings IEEE International Spring Seminar on Electronics Technology 27th ISSE 2004", (2004), 1, ISBN: 0-7803-8422-9, 122 - 125 doi:10.1109/ISSE.2004.1490390. BibTeX
48. H. Kosina, V. Palankovski:
"Mobility Enhancement in Strained CMOS Devices";
Talk: Symposium on Nano Device Technology (SNDT), Hsinchu; (invited) 2004-05-12 - 2004-05-13; in "Proceedings of the Symposium on Nano Device Technology", (2004), 101 - 105. BibTeX
47. V. Palankovski, S. Selberherr:
"Challenges in Modeling of High-Speed Electron Devices";
Talk: International Workshop on the Physics of Semiconductor Devices (IWPSD), Madras; (invited) 2003-12-16 - 2003-12-20; in "Proceedings of the Twelfth International Workshop on the Physics of Semiconductor Devices", (2003), ISBN: 81-7319-567-6, 45 - 50. BibTeX
46. V. Palankovski, S. Selberherr:
"Rigorous Modeling of High-Speed Semiconductor Devices";
Talk: Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong; (invited) 2003-12-16 - 2003-12-18; in "Proc. IEEE Conference on Electron Devices and Solid-State Circuits EDSSC", (2003), ISBN: 0-7803-7749-4, 127 - 132 doi:10.1109/EDSSC.2003.1283498. BibTeX
45. S. Wagner, V. Palankovski, R. Quay, T. Grasser, S. Selberherr:
"Numerical Simulation of High-Speed High-Breakdown Indium Phosphide HBTs";
Talk: International Workshop on the Physics of Semiconductor Devices (IWPSD), Madras; 2003-12-16 - 2003-12-20; in "Proceedings of the Twelfth International Workshop on the Physics of Semiconductor Devices", (2003), ISBN: 81-7319-567-6, 836 - 838. BibTeX
44. V. Palankovski, S. Wagner, S. Selberherr:
"Numerical Analysis of Compound Semiconductor RF Devices";
Talk: Gallium Arsenide Integrated Circuits Symposium (GaAs IC), San Diego; (invited) 2003-11-09 - 2003-11-12; in "Proceedings of the Gallium Arsenide Integrated Circuit Symposium (GaAs IC)", (2003), ISBN: 0-7803-7833-4, 107 - 110 doi:10.1109/GAAS.2003.1252374. BibTeX
43. S. Wagner, V. Palankovski, G. Röhrer, T. Grasser, S. Selberherr:
"Numerische Berechnung von Silizium-Germanium Heterostruktur-Bipolartransistoren";
Poster: Informationstagung Mikroelektronik (ME), Wien; 2003-10-01 - 2003-10-02; in "Beiträge der Informationstagung Mikroelektronik 2003", (2003), ISBN: 3-85133-030-7, 383 - 388. BibTeX
42. K. Dragosits, V. Palankovski, S. Selberherr:
"Mobility Modeling in Presence of Quantum Effects";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 2003-09-03 - 2003-09-05; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2003), ISBN: 0-7803-7826-1, 271 - 274 doi:10.1109/SISPAD.2003.1233689. BibTeX
41. V. Palankovski, S. Selberherr:
"Modeling High Speed Semiconductor Devices of Modern Communication Systems";
Talk: World Multiconference on Systemics, Cybernetics and Informatics (SCI), Orlando; 2003-07-27 - 2003-07-30; in "Proc. 7th World Multiconference on Systemics, Cybernetics and Informatics", (2003), ISBN: 980-6560-01-9, 97 - 102. BibTeX
40. V. Palankovski, S. Selberherr:
"Critical Modeling Issues of SiGe Semiconductor Devices";
Talk: Symposium on Diagnostics and Yield, Warsaw; (invited) 2003-06-22 - 2003-06-25; in "Proceedings Symposium on Diagnostics & Yield: Advanced Silicon Devices and Technologies for ULSI era", (2003), 1 - 11. BibTeX
39. V. Palankovski, G. Röhrer, T. Grasser, S. Smirnov, H. Kosina, S. Selberherr:
"Rigorous Modeling Approach to Numerical Simulation of SiGe-HBTs";
Poster: International SiGe Technology and Device Meeting (ISTDM), Nagoya; 2003-01-15 - 2003-01-17; in "First International SiGe Technology and Device Meeting", (2003), 97 - 98. BibTeX
38. V. Palankovski, S. Selberherr:
"Optimization of SiGe HBTs for Industrial Applications";
Talk: International SiGe Technology and Device Meeting (ISTDM), Nagoya; (invited) 2003-01-15 - 2003-01-17; in "First International SiGe Technology and Device Meeting", (2003), 267 - 268. BibTeX
37. S. Wagner, V. Palankovski, T. Grasser, G. Röhrer, S. Selberherr:
"A Direct Extraction Feature for Scattering Parameters of SiGe-HBTs";
Talk: International SiGe Technology and Device Meeting (ISTDM), Nagoya; 2003-01-15 - 2003-01-17; in "First International SiGe Technology and Device Meeting", (2003), 83 - 84. BibTeX
36. S. Wagner, V. Palankovski, T. Grasser, R. Schultheis, S. Selberherr:
"Small-Signal Analysis and Direct S-Parameter Extraction";
Talk: International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO), Manchester; 2002-11-18 - 2002-11-19; in "The 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications", (2002), ISBN: 0-7803-7530-0, 50 - 55 doi:10.1109/EDMO.2002.1174929. BibTeX
35. V. Palankovski, R. Klima, R. Schultheis, S. Selberherr:
"Three-Dimensional Analysis of Leakage Currents in III-V HBTs";
Talk: Gallium Arsenide Integrated Circuits Symposium (GaAs IC), Monterey; 2002-10-20 - 2002-10-23; in "Proceedings of the Gallium Arsenide Integrated Circuit Symposium (GaAs IC)", (2002), ISBN: 0-7803-7447-9, 229 - 232 doi:10.1109/GAAS.2002.1049066. BibTeX
34. V. Palankovski, S. Wagner, T. Grasser, R. Schultheis, S. Selberherr:
"Direct S-Parameter Extraction by Physical Two-Dimensional Device AC-Simulation";
Poster: International Symposium on Compound Semiconductors (ISCS), Lausanne; 2002-10-07 - 2002-10-10; in "Proceedings of the Intl. Symposium on Compound Semiconductors", (2002), ISBN: 0-7503-0942-3, 303 - 306. BibTeX
33. K. Dragosits, V. Palankovski, S. Selberherr:
"Two-Dimensional Modeling of Quantum Mechanical Effects in Ultra-Short CMOS Devices";
Talk: International Conference on Nanoelectronics and Electromagnetic Compatibility, Skiathos; 2002-09-25 - 2002-09-28; in "Advances in Simulation, Systems Theory, and Systems Engineering", (2002), ISBN: 960-8052-70-x, 113 - 116. BibTeX
32. V. Gopinath, S. Aronowitz, V. Palankovski, S. Selberherr:
"Effects of Stress-Induced Bandgap Narrowing on Reverse-Biased Junction Behavior";
Poster: European Solid-State Device Research Conference (ESSDERC), Florence; 2002-09-24 - 2002-09-26; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2002), ISBN: 88-900847-8-2, 631 - 634 doi:10.1109/ESSDERC.2002.195010. BibTeX
31. V. Palankovski, G. Röhrer, E. Wachmann, J. Kraft, B. Löffler, J. Cervenka, R. Quay, T. Grasser, S. Selberherr:
"Optimization of High-Speed SiGe HBTs";
Talk: International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO), Wien; 2001-11-15 - 2001-11-16; in "Proceedings Intl. Symposium on Electron Devices for Microwave and Optoelectronic Applications", (2001), ISBN: 0-7803-7049-x, 187 - 191 doi:10.1109/EDMO.2001.974305. BibTeX
30. V. Palankovski, N. Belova, T. Grasser, H. Puchner, S. Aronowitz, S. Selberherr:
"Reliable Prediction of Deep Sub-Quartermicron CMOS Technology Performance";
Talk: IEEE Conference on Nanotechnology (NANO), Maui; 2001-10-28 - 2001-10-30; in "Proceedings of the IEEE Conference on Nanotechnology (NANO)", (2001), ISBN: 0-7803-7215-8, 201 - 206 doi:10.1109/NANO.2001.966419. BibTeX
29. V. Palankovski, N. Belova, T. Grasser, H. Puchner, S. Aronowitz, S. Selberherr:
"A Methodology for Deep Sub-Quartermicron CMOS Technology Characterization";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 2001-09-05 - 2001-09-07; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6, 428 - 431 doi:10.1007/978-3-7091-6244-6_99. BibTeX
28. R. Quay, R. Schultheis, W. Kellner, V. Palankovski, S. Selberherr:
"A Review of Modeling Issues for RF Heterostructure Device Simulation";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 2001-09-05 - 2001-09-07; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6, 432 - 435 doi:10.1007/978-3-7091-6244-6_100. BibTeX
27. R. Quay, V. Palankovski, M. Chertouk, A. Leuther, S. Selberherr:
"Simulation of InAlAs/InGaAs High Electron Mobility Transistors with a Single Set of Physical Parameters";
Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 2000-12-10 - 2000-12-13; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2000), ISBN: 0-7803-6438-4, 186 - 189 doi:10.1109/IEDM.2000.904289. BibTeX
26. V. Palankovski, R. Quay, S. Selberherr:
"Industrial Application of Heterostructure Device Simulation";
Talk: Gallium Arsenide Integrated Circuits Symposium (GaAs IC), Seattle; (invited) 2000-11-05 - 2000-11-08; in "Proceedings of the Gallium Arsenide Integrated Circuit Symposium (GaAs IC)", (2000), ISBN: 0-7803-5968-2, 117 - 120 doi:10.1109/GAAS.2000.906305. BibTeX
25. T. Grasser, R. Quay, V. Palankovski, S. Selberherr:
"A Global Self-Heating Model for Device Simulation";
Talk: European Solid-State Device Research Conference (ESSDERC), Cork; 2000-09-11 - 2000-09-13; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2000), ISBN: 2-86332-248-6, 324 - 327 doi:10.1109/ESSDERC.2000.194780. BibTeX
24. V. Palankovski, T. Grasser, M. Knaipp, S. Selberherr:
"Simulation of Polysilicon Emitter Bipolar Transistors";
Poster: European Solid-State Device Research Conference (ESSDERC), Cork; 2000-09-11 - 2000-09-13; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2000), ISBN: 2-86332-248-6, 608 - 611 doi:10.1109/ESSDERC.2000.194851. BibTeX
23. V. Palankovski, S. Selberherr, R. Quay, R. Schultheis:
"Analysis of HBT Behavior After Strong Electrothermal Stress";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Seattle, WA, USA; 2000-09-06 - 2000-09-08; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2000), ISBN: 0-7803-6279-9, 245 - 248 doi:10.1109/SISPAD.2000.871254. BibTeX
22. R. Quay, H. Massler, W. Kellner, T. Grasser, V. Palankovski, S. Selberherr:
"Simulation of Gallium-Arsenide Based High Electron Mobility Transistors";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Seattle, WA, USA; 2000-09-06 - 2000-09-08; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2000), ISBN: 0-7803-6279-9, 74 - 77 doi:10.1109/SISPAD.2000.871210. BibTeX
21. V. Palankovski, R. Schultheis, A. Bonacina, S. Selberherr:
"Investigations on the Impact of the InGaP Ledge on HBT-Performance";
Talk: Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Aegean See; 2000-05-29 - 2000-06-02; in "Proceedings Workshop on Compound Semiconductor Devices and Integrated Circuits", (2000), ISBN: 0-9703111-0-9, 5 - 6. BibTeX
20. V. Palankovski, S. Selberherr:
"State-of-the-art Micro Materials Models in MINIMOS-NT";
Talk: International Conference on Micro Materials, Berlin; 2000-05-17 - 2000-05-19; in "Proceedings of the 3rd Intl. Micro Materials Conference", (2000), Dresden, ISBN: 3-932434-15-3, 714 - 717. BibTeX
19. V. Palankovski, S. Selberherr:
"State-of-the-art Micro Materials Models in MINIMOS-NT";
Talk: International Conference on Micro Materials, Berlin; 2000-05-17 - 2000-05-19; in "Abstracts Intl. Conf. on Micro Materials", (2000), ISBN: 3-932434-14-5, 290 - 291. BibTeX
18. V. Palankovski, S. Selberherr:
"III-V Semiconductor Materials in MINIMOS-NT";
Poster: Materials Research Society Spring Meeting (MRS), San Francisco; 2000-04-24 - 2000-04-28; in "Abstracts MRS Spring Meeting", (2000), 249. BibTeX
17. V. Palankovski, R. Schultheis, A. Bonacina, S. Selberherr:
"Effectiveness of Silicon Nitride Passivation in III-V Based HBTs";
Poster: International Conference on Defects in Insulating Materials, Johannesburg; 2000-04-03 - 2000-04-07; in "Abstracts Intl. Conf. on Defects in Insulating Materials", (2000), 188. BibTeX
16. V. Palankovski, R. Quay, S. Selberherr, R. Schultheis:
"S-Parameter Simulation of HBTs on Gallium-Arsenide";
Talk: International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO), London; 1999-11-22 - 1999-11-23; in "Proceedings High Performance Electron Devices for Microwave and Optoelectronic Applications EDMO", (1999), ISBN: 0-7803-5298-x, 15 - 19 doi:10.1109/EDMO.1999.821087. BibTeX
15. V. Palankovski, S. Selberherr, R. Schultheis:
"Simulation of Heterojunction Bipolar Transistors on Gallium-Arsenide";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kyoto, Japan; 1999-09-06 - 1999-09-08; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1999), ISBN: 4-930813-98-0, 227 - 230 doi:10.1109/SISPAD.1999.799302. BibTeX
14. V. Palankovski, R. Strasser, H. Kosina, S. Selberherr:
"A Systematic Approach for Model Extraction for Device Simulation Application";
Talk: International Conference on Applied Modelling and Simulation, Cairns; 1999-09-01 - 1999-09-03; in "Proceedings Intl. Conf. on Applied Modelling and Simulation", (1999), ISBN: 0-88986-259-1, 463 - 466. BibTeX
13. R. Quay, V. Palankovski, R. Reuter, M. Schlechtweg, W. Kellner, S. Selberherr:
"III/V Device Optimization by Physics Based S-Parameter Simulation";
Talk: International Symposium on Compound Semiconductors (ISCS), Berlin; 1999-08-22 - 1999-08-26; in "Proceedings Intl. Symposium on Compound Semiconductors", (1999), ISBN: 0-7503-0704-8, 325 - 328. BibTeX
12. V. Palankovski, S. Selberherr:
"Thermal Models for Semiconductor Device Simulation";
Talk: Conference on High Temperature Electronics (HITEN), Berlin; 1999-07-04 - 1999-07-07; in "Proceedings European Conf. on High Temperature Electronics HITEN", (1999), ISBN: 0-7803-5795-7, 25 - 28 doi:10.1109/HITEN.1999.827343. BibTeX
11. B. Gonzalez, V. Palankovski, H. Kosina, A. Hernandez, S. Selberherr:
"An Analytical Model for the Electron Energy Relaxation Time";
Talk: Conference De Dispositivos Electronicos, Madrid; 1999-06-10 - 1999-06-11; in "Proceedings Conf. De Dispositivos Electronicos", (1999), ISBN: 84-00-07819-5, 263 - 266. BibTeX
10. R. Quay, C. Moglestue, V. Palankovski, S. Selberherr:
"A Temperature Dependent Model for the Saturation Velocity in Semiconductor Materials";
Talk: Materials Research Society Spring Meeting (MRS), Strasbourg; 1999-06-01 - 1999-06-04; in "Abstracts E-MRS Spring Meeting", (1999), L-7. BibTeX
9. B. Gonzalez, V. Palankovski, H. Kosina, A. Hernandez, S. Selberherr:
"An Energy Relaxation Time Model for Device Simulation";
Talk: International Conference on Modelling and Simulation, Philadelphia; 1999-05-05 - 1999-05-08; in "Proceedings IASTED Intl. Conf. on Modelling and Simulation", (1999), ISBN: 0-88986-247-8, 367 - 370. BibTeX
8. V. Palankovski, B. Gonzalez, H. Kosina, A. Hernandez, S. Selberherr:
"A New Analytical Energy Relaxation Time Model for Device Simulation";
Talk: International Conference on Modeling and Simulation of Microsystems (MSM), San Juan; 1999-04-19 - 1999-04-21; in "Proceedings Intl. Conf. on Modeling and Simulation of Microsystems", (1999), ISBN: 0-9666135-4-6, 395 - 398. BibTeX
7. R. Quay, R. Reuter, V. Palankovski, S. Selberherr:
"S-Parameter Simulation of RF-HEMTs";
Talk: International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO), Manchester; 1998-11-24 in "Proceedings High Performance Electron Devices for Microwave and Optoelectronic Applications EDMO 98", (1998), ISBN: 0-7803-4333-6, 13 - 18. BibTeX
6. T. Grasser, V. Palankovski, G. Schrom, S. Selberherr:
"Hydrodynamic Mixed-Mode Simulation";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 1998-09-02 - 1998-09-04; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4, 247 - 250 doi:10.1007/978-3-7091-6827-1_62. BibTeX
5. V. Palankovski, G. Kaiblinger-Grujin, H. Kosina, S. Selberherr:
"A Dopant-Dependent Band Gap Narrowing Model Application for Bipolar Device Simulation";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 1998-09-02 - 1998-09-04; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4, 105 - 108 doi:10.1007/978-3-7091-6827-1_29. BibTeX
4. V. Palankovski, G. Kaiblinger-Grujin, S. Selberherr:
"Implications of Dopant-Dependent Low-Field Mobility and Band Gap Narrowing on the Bipolar Device Performance";
Talk: L. Brogiato, D.V. Camin, G. Pessina (ed); European Workshop on Low Temperature Electronics (WOLTE), San Miniato; 1998-06-24 - 1998-06-26; in "Proceedings European Workshop on Low Temperature Electronics 3", (1998), 8, 91 - 94 doi:10.1051/jp4:1998321. BibTeX
3. V. Palankovski, G. Kaiblinger-Grujin, S. Selberherr:
"Study of Dopant-Dependent Band Gap Narrowing in Compound Semiconductor Devices";
Poster: International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technology, Cardiff; 1998-06-21 - 1998-06-24; in "Abstracts Intl. Workshop on Expert Evaluation & Control of Compound Semicond. Mat. & Technology", (1998), 15. BibTeX
2. V. Palankovski, T. Grasser, S. Selberherr:
"SiGe HBT in Mixed-Mode Device and Circuit Simulation";
Talk: Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Zeuthen; 1998-05-24 - 1998-05-27; in "Proceedings Workshop on Compound Semiconductor Devices and Integrated Circuits", (1998), 145 - 156. BibTeX
1. V. Palankovski, M. Knaipp, S. Selberherr:
"Influence of the Material Composition and Doping Profiles on HBTs Device Performance";
Talk: International Conference on Modelling and Simulation, Pittsburgh; 1998-05-13 - 1998-05-16; in "Proceedings IASTED Intl. Conf. on Modelling and Simulation", (1998), ISBN: 0-88986-252-4, 7 - 10. BibTeX

Talks and Poster Presentations (without Proceedings-Entry)

6. V. Palankovski:
"Photovoltaic and Thermoelectric Devices for Renewable Energy Harnessing";
Talk: Electronica, Sofia, Bulgaria; (invited) 2012-06-14 - 2012-06-15; . BibTeX
5. A. Axelevitch, V. Palankovski, S. Selberherr, G. Golan:
"Large Silicon Solar Cells of a Lateral Type";
Poster: 2nd International Conference on Crystalline Silicon Photovoltaics (Silicon PV 2012), Leuven, Belgium; 2012-04-03 - 2012-04-05; . BibTeX
4. V. Palankovski:
"Analysis and Simulation of Semicondutor Devices";
Talk: 3er. Congreso Nacional de Mecatronica, Zempoala, Mexico; (invited) 2009-11-25 - 2009-11-27; . BibTeX
3. V. Palankovski:
"Advanced Device Modeling for High Frequency Applications";
Talk: Compact Modeling for RF/Microwave Applications (CMRF), Maastricht; (invited) 2006-10-11. BibTeX
2. V. Palankovski:
"Simulation von SiGe Bauelementen";
Talk: GMM Workshop, München; (invited) 2002-04-24 - 2002-04-25; . BibTeX
1. V. Palankovski, M. Rottinger, T. Simlinger, S. Selberherr:
"Two-Dimensional Simulation and Comparison of Si-based and GaAs-based HBTs";
Talk: III-V Semiconductor Device Simulation Workshop, Turin; 1997-10-16 - 1997-10-17; . BibTeX

Doctor's Theses (authored and supervised)

1. V. Palankovski:
"Simulation of Heterojunction Bipolar Transistors";
Reviewer: S. Selberherr, E. Gornik; Institut für Mikroelektronik, 2000, oral examination: 2000-12-12 doi:10.34726/hss.2000.03142613. BibTeX

Diploma and Master Theses (authored and supervised)

1. I. Serrano-Lopez:
"Study of Non-Stationary Effects of Space Charge in InN Films for Amplifiers and Delay Lines";
Supervisor: A. Garcia-Barrientos, V. Palankovski; Universidad Politecnica de Pachua (UPP), Mexico, 2013, final examination: 2013-02-12. BibTeX

Scientific Reports

5. V. Palankovski:
"Simulation of Advanced Semiconductor Devices";
(2007), 11 page(s) . BibTeX
4. Ch. Hollauer, A. Sheikholeslami, V. Palankovski, S. Wagner, R. Wittmann, S. Selberherr:
"VISTA Status Report June 2003";
(2003), 36 page(s) . BibTeX
3. H. Ceric, K. Dragosits, A. Gehring, S. Smirnov, V. Palankovski, S. Selberherr:
"VISTA Status Report December 2002";
(2002), 35 page(s) . BibTeX
2. T. Binder, M. Gritsch, C. Heitzinger, V. Palankovski, S. Selberherr:
"VISTA Status Report December 2000";
(2000), 41 page(s) . BibTeX
1. R. Klima, V. Palankovski, M. Radi, R. Strasser, S. Selberherr:
"VISTA Status Report December 1998";
(1998), 32 page(s) . BibTeX
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Institute for Microelectronics
Head: Univ. Prof. Dipl.-Ing. Dr. techn. Tibor Grasser
Deputy Head: O. Univ. Prof. Dipl.-Ing. Dr. techn. Dr.h.c. Siegfried Selberherr
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