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Publications Gregor Pobegen

39 records


Publications in Scientific Journals

25. B. Butej, V Padovan, D. Pogany, G. Pobegen, C. Ostermaier, C Koller:
"Method to Distinguish Between Buffer and Surface Trapping in Stressed Normally-ON GaN GITs Using the Gate-Voltage Dependence of Recovery Time Constants";
IEEE Transactions on Electron Devices, 69, (2022), 3087 - 3093. BibTeX
24. B. Ruch, M. Jech, G. Pobegen, T. Grasser:
"Applicability of Shockley-Read-Hall Theory for Interface States";
IEEE Transactions on Electron Devices, 68, (2021), 2092 - 2097 doi:10.1109/TED.2021.3049760. BibTeX
23. B. Ruch, G. Pobegen, T. Grasser:
"Localizing Hot-Carrier Degradation in Silicon Trench MOSFETs";
IEEE Transactions on Electron Devices, 68, (2021), 1804 - 1809 doi:10.1109/TED.2021.3060697. BibTeX
22. F. Triendl, G. Pfusterschmied, G. Pobegen, S. Schwarz, W. Artner, J. Konrath, U. Schmid:
"Growth and characterization of low pressure chemical vapor deposited Si on Si-face 4H-SiC";
Materials Science in Semiconductor Processing, 131, (2021), 1 - 8 doi:10.1016/j.mssp.2021.105888. BibTeX
21. F. Triendl, G. Pfusterschmied, S. Schwarz, G. Pobegen, J. Konrath, U. Schmid:
"Barrier height tuning by inverse sputter etching at poly-Si/4H-SiC heterojunction diodes";
Semiconductor Science and Technology, 36, (2021), 1 - 8 doi:10.1088/1361-6641/abf29b. BibTeX
20. J. Berens, G. Pobegen, T. Grasser:
"Tunneling Effects in NH3 Annealed 4H-SiC Trench MOSFETs";
Materials Science Forum, 1004, (2020), 652 - 658 doi:10.4028/www.scientific.net/MSF.1004.652. BibTeX
19. B. Ruch, G. Pobegen, T. Grasser:
"Investigation of the Temperature Dependence of Hot-Carrier Degradation in Si MOSFETs Using Spectroscopic Charge Pumping";
IEEE Transactions on Electron Devices, 67, (2020), 4092 - 4098 doi:10.1109/TED.2020.3018091. BibTeX
18. F. Triendl, G. Pfusterschmied, G. Pobegen, J. Konrath, U. Schmid:
"Theoretical and experimental investigations of barrier height inhomogeneities in poly-Si/4H-SiC heterojunction diodes";
Semiconductor Science and Technology, 35, (2020), 1 - 13 doi:10.1088/1361-6641/abae8d. BibTeX
17. J. Berens, G. Pobegen, T. Eichinger, G. Rescher, T. Grasser:
"Cryogenic Characterization of NH3 Post Oxidation Annealed 4H-SiC Trench MOSFETs";
Materials Science Forum, 963, (2019), 175 - 179 doi:10.4028/www.scientific.net/MSF.963.175. BibTeX
16. J. Berens, G. Pobegen, G. Rescher, T. Aichinger, T. Grasser:
"NH3 and NO + NH3 Annealing of 4H-SiC Trench MOSFETs: Device Performance and Reliability";
IEEE Transactions on Electron Devices, 66, (2019), 4692 - 4697 doi:10.1109/TED.2019.2941723. BibTeX
15. R. Bernhard, G. Pobegen, M. Rösch, R. Vytla, T. Grasser:
"Charge Pumping of Low-Voltage Silicon Trench Powers MOSFETs";
IEEE Transactions on Device and Materials Reliability, 19, (2019), 133 - 139 doi:10.1109/TDMR.2019.2891794. BibTeX
14. C Koller, G. Pobegen, C. Ostermaier, G. Hecke, R. Neumann, M. Holzbauer, G. Strasser, D. Pogany:
"Trap-Related Breakdown and Filamentary Conduction in Carbon Doped GaN";
Physica Status Solidi B - Basic Solid State Physics, 256, (2019), 1800527-1 - 1800527-8 doi:10.1002/pssb.201800527. BibTeX
13. G. Rescher, G. Pobegen, T. Aichinger, T. Grasser:
"Comprehensive Evaluation of Bias Temperature Instabilities on 4H-SiC MOSFETs Using Device Preconditioning";
Materials Science Forum, 924, (2018), 671 - 675 doi:10.4028/www.scientific.net/MSF.924.671. BibTeX
12. G. Rescher, G. Pobegen, T. Aichinger, T. Grasser:
"Preconditioned BTI on 4H-SiC: Proposal for a Nearly Delay Time-Independent Measurement Technique";
IEEE Transactions on Electron Devices, 25, (2018), 1419 - 1426 doi:10.1109/TED.2018.2803283. BibTeX
11. C Koller, G. Pobegen, C. Ostermaier, M. Huber, D. Pogany:
"The interplay of blocking properties with charge and potential redistribution in thin carbon-doped GaN on n-doped GaN layers";
Applied Physics Letters, 111, (2017), 0321061 - 0321065 doi:10.1063/1.4993571. BibTeX
10. G. Rescher, G. Pobegen, T. Aichinger, T. Grasser:
"Improved Interface Trap Density Close to the Conduction Band Edge of a-Face 4H-SiC MOSFETs Revealed Using the Charge Pumping Technique";
Materials Science Forum, 897, (2017), 143 - 146 doi:10.4028/www.scientific.net/MSF.897.143. BibTeX
9. R. Stradiotto, G. Pobegen, C. Ostermaier, M. Waltl, A. Grill, T. Grasser:
"Characterization of Interface Defects With Distributed Activation Energies in GaN-Based MIS-HEMTs";
IEEE Transactions on Electron Devices, 64, (2017), 1045 - 1052 doi:10.1109/TED.2017.2655367. BibTeX
8. G. Rescher, G. Pobegen, T. Grasser:
"Threshold Voltage Instabilities of Present SiC-Power MOSFETs Under Positive Bias Temperature Stress";
Materials Science Forum, 858, (2016), 481 - 484 doi:10.4028/www.scientific.net/MSF.858.481. BibTeX
7. R. Stradiotto, G. Pobegen, C. Ostermaier, T. Grasser:
"Characterization of Charge Trapping Phenomena at III-N/Dielectric Interfaces";
Solid-State Electronics, 125, (2016), 142 - 153 doi:10.1016/j.sse.2016.07.017. BibTeX
6. G. Pobegen, T. Aichinger, A. Salinaro, T. Grasser:
"Impact of Hot Carrier Degradation and Positive Bias Temperature Stress on Lateral 4H-SiC nMOSFETs";
Materials Science Forum, 778-780, (2014), 959 - 962 doi:10.4028/www.scientific.net/MSF.778-780.959. BibTeX
5. P. Lagger, A. Schiffmann, G. Pobegen, D. Pogany, C. Ostermaier:
"Very Fast Dynamics of Threshold Voltage Drifts in GaN-Based MIS-HEMTs";
IEEE Electron Device Letters, 34, (2013), 1112 - 1114. BibTeX
4. G. Pobegen, T. Grasser:
"Efficient Characterization of Threshold Voltage Instabilities in SiC nMOSFETs Using the Concept of Capture-Emission-Time Maps";
Materials Science Forum, 740-742, (2013), 757 - 760 doi:10.4028/www.scientific.net/MSF.740-742.757. BibTeX
3. G. Pobegen, T. Grasser:
"On the Distribution of NBTI Time Constants on a Long, Temperature-Accelerated Time Scale";
IEEE Transactions on Electron Devices, 60, (2013), 2148 - 2155 doi:10.1109/TED.2013.2264816. BibTeX
2. G. Pobegen, M. Nelhiebel, S. de Filippis, T. Grasser:
"Accurate High Temperature Measurements Using Local Polysilicon Heater Structures";
IEEE Transactions on Device and Materials Reliability, 99, (2013), 1 - 8 doi:10.1109/TDMR.2013.2265015. BibTeX
1. G. Pobegen, S. E. Tyaginov, M. Nelhiebel, T. Grasser:
"Observation of Normally Distributed Energies for Interface Trap Recovery After Hot-Carrier Degradation";
IEEE Electron Device Letters, 34, (2013), 939 - 941 doi:10.1109/LED.2013.2262521. BibTeX

Talks and Poster Presentations (with Proceedings-Entry)

8. B. Ruch, M. Jech, G. Pobegen, T. Grasser:
"Applicability of Shockley-Read-Hall Theory for Interface States";
Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA - virtual; 2020-12-12 - 2020-12-18; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2020), 449 - 452 doi:10.1109/IEDM13553.2020.9372032. BibTeX
7. A. Vasilev, M. Jech, A. Grill, G. Rzepa, C. Schleich, A. Makarov, G. Pobegen, T. Grasser, M. Waltl, S. E. Tyaginov:
"Modeling the Hysteresis of Current-Voltage Characteristics in 4H-SiC Transistors";
Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA - virtual; 2020-10-04 - 2020-10-08; in "Proceedings of the International Integrated Reliability Workshop (IIRW)", (2020), 1 - 4 doi:10.1109/IIRW49815.2020.9312864. BibTeX
6. B. Ruch, G. Pobegen, C. Schleich, T. Grasser:
"Generation of Hot-Carrier Induced Border and Interface Traps, Investigated by Spectroscopic Charge Pumping";
Talk: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 2020-04-28 in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), ISBN: 978-1-7281-3200-6, 1 - 6 doi:10.1109/IRPS45951.2020.9129513. BibTeX
5. J. Berens, M. Weger, G. Pobegen, T. Aichinger, G. Rescher, C. Schleich, T. Grasser:
"Similarities and Differences of BTI in SiC and Si Power MOSFETs";
Talk: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 2020-03-29 - 2020-04-02; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), ISBN: 978-1-7281-3200-6, 1 - 6 doi:10.1109/IRPS45951.2020.9129259. BibTeX
4. C. Schleich, J. Berens, G. Rzepa, G. Pobegen, G. Rescher, S. E. Tyaginov, T. Grasser, M. Waltl:
"Physical Modeling of Bias Temperature Instabilities in SiC MOSFETs";
Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, USA; 2019-12-07 - 2019-12-11; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2019), doi:10.1109/IEDM19573.2019.8993446. BibTeX
3. P. Lagger, A. Schiffmann, G. Pobegen, D. Pogany, C. Ostermaier:
"New insights on forward Gate Bias induced Threshold Voltage Instabilities of GaN-Based MIS-HEMTS";
Talk: Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Warnemüde, Deutschland; 2013-05-26 - 2013-05-29; in "WOCSDICE 2013", (2013), 161 - 162. BibTeX
2. G. Pobegen, M. Nelhiebel, T. Grasser:
"Detrimental impact of hydrogen passivation on NBTI and HC degradation";
Poster: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2013-04-14 - 2013-04-18; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2013), 1 - 6. BibTeX
1. G. Pobegen, M. Nelhiebel, T. Grasser:
"Recent Results Concerning the Influence of Hydrogen on the Bias Temperature Instability";
Talk: IEEE International Integrated Reliability Workshop, California; 2012-10-14 - 2012-10-18; in "2012 IEEE International Integrated Reliability Workshop Final Report", (2012), 54 - 59. BibTeX

Talks and Poster Presentations (without Proceedings-Entry)

5. C. Ostermaier, P. Lagger, M. Reiner, C Koller, G. Pobegen, D. Pogany:
"Dielectrics for GaN and GaN as dielectric: The role of interface and bulk defects";
Talk: Workshop on Dielectrics in Microelectronics (WODIM), Berlin; 2018-06-11 - 2018-06-14; . BibTeX
4. C. Ostermaier, P. Lagger, M. Reiner, A. Grill, R. Stradiotto, G. Pobegen, T. Grasser, R. Pietschnig, D. Pogany:
"Review of bias-temperature instabilities at the III-N/dielectric interface";
Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Bordequx, Frankreich; 2017-09-25 - 2017-09-28; . BibTeX
3. C Koller, G. Pobegen, C. Ostermaier, M. Huber, D. Pogany:
"Transient capacitance analysis of thin carbon doped GaN layers";
Talk: Conference of Nitride Semiconductors (ICNS), Strassbourg, Frankreich; 2017-07-24 - 2017-07-28; . BibTeX
2. C Koller, G. Pobegen, C. Ostermaier, M. Huber, D. Pogany:
"Leakage and voltage blocking behavior of carbon-doped GaN buffer layers";
Talk: Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Las Palmas de Gran Canaria, Spanien; 2017-05-22 - 2017-05-24; . BibTeX
1. C. Ostermaier, P. Lagger, M. Reiner, G. Pobegen, D. Pogany:
"Is PBTI at the dielectric/III‐N interface limited by interface traps?";
Talk: WOCSEMMAD, San Antonio, TX, USA; 2014-02-16 - 2014-02-17; . BibTeX

Doctor's Theses (authored and supervised)

1. G. Pobegen:
"Degradation of Electrical Parameters of Power Semiconductor Devices - Process Influences and Modeling";
Reviewer: T. Grasser, P. Hadley; Institut für Mikroelektronik, 2013, oral examination: 2013-12-05 doi:10.34726/hss.2013.11338322. BibTeX
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