Staff Person Publications

Publications Mahdi Pourfath

147 records

Books and Editorships

1.	M. Pourfath: "The Non-Equilibrium Green's Function Method for Nanoscale Device Simulation"; S. Selberherr (ed); Springer-Verlag, Wien - New York, (2014), ISBN: 978-3-7091-1800-9, 256 page(s) doi:10.1007/978-3-7091-1800-9. BibTeX

Publications in Scientific Journals

55.	N.S. Azar, M. Pourfath: "Aggregation Kinetics and Stability Mechanisms of Pristine and Oxidized Nanocarbons in Polar Solvents"; The Journal of Physical Chemistry C, 120, (2016), 16804 - 16814 doi:10.1021/acs.jpcc.6b05318. BibTeX
54.	Z. Chaghazardi, S. Touski, M. Pourfath, R. Faez: "Spin Relaxation in Graphene Nanoribbons in the Presence of Substrate Surface Roughness"; Journal of Applied Physics, 120, (2016), 053904-1 - 053904-5 doi:10.1063/1.4960354. BibTeX
53.	S. Nazemi, M. Pourfath, E. Soleimani, H. Kosina: "The Effect of Oxide Shell Thickness on the Structural, Electronic, and Optical Properties of Si-SiO₂ Core-Shell Nano-Crystals: A (Time Dependent)Density Functional Theory Study"; Journal of Applied Physics, 114, (2016), 144302-1 - 1444302-9 doi:10.1063/1.4945392. BibTeX
52.	M. Thesberg, M. Pourfath, N. Neophytou, H. Kosina: "The Fragility of Thermoelectric Power Factor in Cross-Plane Superlattices in the Presence of Nonidealities: A Quantum Transport Simulation Approach"; Journal of Electronic Materials, 45, (2016), 1584 - 1588 doi:10.1007/s11664-015-4124-7. BibTeX
51.	M. Zeraati, S.M.V. Allaei, I.A. Sarsari, M. Pourfath, D. Donadio: "Highly Anisotropic Thermal Conductivity of Arsenene: An Ab Initio Study"; Physical Review B, 93, (2016), 085424-1 - 085424-6 doi:10.1103/PhysRevB.93.085424. BibTeX
50.	M. Asad, S. Salimian, M. Sheikhi, M. Pourfath: "Flexible Phototransistors Based on Graphene Nanoribbon Decorated with MoS₂ Nanoparticles"; Sensors and Actuators A: Physical, 232, (2015), 285 - 291 doi:10.1016/j.sna.2015.06.018. BibTeX
49.	M. Asad, M. Sheikhi, M. Pourfath, M. Moradi: "High Sensitive and Selective Flexible H2S Gas Sensors Based on Cu Nanoparticle Decorated SWCNTs"; Sensors and Actuators B: Chemical, 210, (2015), 1 - 8 doi:10.1016/j.snb.2014.12.086. BibTeX
48.	M. Elahi, K. Khaliji, S. M. Tabatabaei, M. Pourfath, R. Asgari: "Modulation of Electronic and Mechanical Properties of Phosphorene Through Strain"; Physical Review B, 91, (2015), 1154121 - 1154128 doi:10.1103/PhysRevB.91.115412. BibTeX
47.	N. Ghobadi, M. Pourfath: "Vertical Tunneling Graphene Heterostructure-Based Transistor for Pressure Sensing"; IEEE Electron Device Letters, 36, (2015), 280 - 282 doi:10.1109/LED.2014.2388452. BibTeX
46.	M. Hosseini, M. Elahi, M. Pourfath, D. Esseni: "Strain Induced Mobility Modulation in Single-Layer MoS₂"; Journal of Physics D: Applied Physics, 48, (2015), 375104-1 - 375104-11 doi:10.1088/0022-3727/48/37/375104. BibTeX
45.	M. Hosseini, M. Elahi, M. Pourfath, D. Esseni: "Strain-Induced Modulation of Electron Mobility in Single-Layer Transition Metal Dichalcogenides MX₂ ( M = Mo, W ; X = S , Se)"; IEEE Transactions on Electron Devices, 62, (2015), 3192 - 3198 doi:10.1109/TED.2015.2461617. BibTeX
44.	M. Hosseini, M. Elahi, M. Pourfath, D. Esseni: "Very Large Strain Gauges Based on Single Layer MoSe₂ and WSe₂ for Sensing Applications"; Applied Physics Letters, 107, (2015), 253503-1 - 253503-4 doi:10.1063/1.4937438. BibTeX
43.	H. Karamitaheri, M. Pourfath, H. Kosina, N. Neophytou: "Low-Dimensional Phonon Transport Effects in Ultranarrow Disordered Graphene Nanoribbons"; Physical Review B, 91, (2015), 165410-1 - 165410-15 doi:10.1103/PhysRevB.91.165410. BibTeX
42.	M. Moradinasab, M. Pourfath, M. Fathipour, H. Kosina: "Numerical Study of Graphene Superlattice-Based Photodetectors"; IEEE Transactions on Electron Devices, 62, (2015), 593 - 600 doi:10.1109/TED.2014.2383354. BibTeX
41.	M. Moradinasab, M. Pourfath, H. Kosina: "Performance Optimization and Instability Study in Ring Cavity Quantum Cascade Lasers"; IEEE Journal of Quantum Electronics, 51, (2015), 1 - 7 doi:10.1109/JQE.2014.2373171. BibTeX
40.	S. Nazemi, M. Pourfath, E. Soleimani, H. Kosina: "On the Role of Spatial Position of Bridged Oxygen Atoms as Surface Passivants on the Ground-State Gap and Photo-Absorption Spectrum of Silicon Nano-Crystals"; Journal of Applied Physics, 118, (2015), 205303-1 - 205303--6 doi:10.1063/1.4936310. BibTeX
39.	N. Sefidmooye Azar, M. Pourfath: "A Comprehensive Study of Transistors Based on Conductive Polymer Matrix Composites"; IEEE Transactions on Electron Devices, 62, (2015), 1584 - 1589 doi:10.1109/TED.2015.2411992. BibTeX
38.	M. Thesberg, M. Pourfath, N. Neophytou, H. Kosina: "The Influence of Non-Idealities on the Thermoelectric Power Factor of Nanostructured Superlattices"; Journal of Applied Physics, 118, (2015), 224301-1 - 224301-6 doi:10.1063/1.4936839. BibTeX
37.	M. Asad, M. Fathipour, M. Sheikhi, M. Pourfath: "High-performance Infrared Photo-transistor Based on SWCNT Decorated with PbS Nanoparticles"; Sensors and Actuators A: Physical, 220, (2014), 213 - 220 doi:10.1016/j.sna.2014.10.017. BibTeX
36.	N. Djavid, K. Khaliji, S. M. Tabatabaei, M. Pourfath: "A Computational Study on the Electronic Transport Properties of Ultra-Narrow Disordered Zigzag Graphene Nanoribbons"; IEEE Transactions on Electron Devices, 61, (2014), 23 - 29 doi:10.1109/TED.2013.2290773. BibTeX
35.	N. Ghobadi, M. Pourfath: "A Comparative Study of Tunneling FETs Based on Graphene and GNR Heterostructures"; IEEE Transactions on Electron Devices, 61, (2014), 186 - 192 doi:10.1109/TED.2013.2291788. BibTeX
34.	N. Ghobadi, M. Pourfath: "On the Role of Disorder on Graphene and Graphene Nanoribbon-Based Vertical Tunneling Transistors"; Journal of Applied Physics, 116, (2014), 1845061 - 1845067 doi:10.1063/1.4901584. BibTeX
33.	M. Gholipour, N. Masoumi, Y.C. Chen, D. Chen, M. Pourfath: "Asymmetric Gate Schottky-Barrier Graphene Nanoribbon FETs for Low-Power Design"; IEEE Transactions on Electron Devices, 61, (2014), 4000 - 4006 doi:10.1109/TED.2014.2362774. BibTeX
32.	A. Mojibpour, M. Pourfath, H. Kosina: "Optimization Study of Third Harmonic Generation in Quantum Cascade Lasers"; Optics Express, 22, (2014), 20607 - 20612 doi:10.1364/OE.22.020607. BibTeX
31.	S. Soleimani Kahnoj, S. Touski, M. Pourfath: "The Effect of Electron-Electron Interaction Induced Dephasing on Electronic Transport in Graphene Nanoribbons"; Applied Physics Letters, 105, (2014), 1035021 - 1035024 doi:10.1063/1.4894859. BibTeX
30.	H. Karamitaheri, M. Pourfath, R. Faez, H. Kosina: "Atomistic Study of the Lattice Thermal Conductivity of Rough Graphene Nanoribbons"; IEEE Transactions on Electron Devices, 60, (2013), 2142 - 2147 doi:10.1109/TED.2013.2262049. BibTeX
29.	K. Khaliji, M. Noei, S. M. Tabatabaei, M. Pourfath, M. Fathipour, Y. Abdi: "Tunable Bandgap in Bilayer Armchair Graphene Nanoribbons: Concurrent Influence of Electric Field and Uniaxial Strain"; IEEE Transactions on Electron Devices, 60, (2013), 2464 - 2470 doi:10.1109/TED.2013.2266300. BibTeX
28.	S. M. Tabatabaei, M. Noei, K. Khaliji, M. Pourfath, M. Fathipour: "A First-Principles Study on the Effect of Biaxial Strain on the Ultimate Performance of Monolayer MoS2-Based Double Gate Field Effect Transistor"; Journal of Applied Physics, 113, (2013), 163708-1 - 163708-6 doi:10.1063/1.4803032. BibTeX
27.	S. Touski, M. Pourfath: "Substrate Surface Corrugation Effects on the Electronic Transport in Graphene Nanoribbons"; Applied Physics Letters, 103, (2013), 1435061 - 1435063 doi:10.1063/1.4824362. BibTeX
26.	H. Karamitaheri, N. Neophytou, M. Pourfath, R. Faez, H. Kosina: "Engineering Enhanced Thermoelectric Properties in Zigzag Graphene Nanoribbons"; Journal of Applied Physics, 111, (2012), 054501-1 - 054501-9 doi:10.1063/1.3688034. BibTeX
25.	H. Karamitaheri, N. Neophytou, M. Pourfath, H. Kosina: "Study of Thermal Properties of Graphene-Based Structures using the Force Constant Method"; Journal of Computational Electronics, 11, (invited) (2012), 14 - 21 doi:10.1007/s10825-011-0380-9. BibTeX
24.	M. Moradinasab, H. Nematian, M. Pourfath, M. Fathipour, H. Kosina: "Analytical Models of Approximations for Wave Functions and Energy Dispersion in Zigzag Graphene Nanoribbons"; Journal of Applied Physics, 111, (2012), 074318-1 - 074318-9 doi:10.1063/1.3702429. BibTeX
23.	H. Nematian, M. Moradinasab, M. Pourfath, M. Fathipour, H. Kosina: "Optical Properties of Armchair Graphene Nanoribbons Embedded in Hexagonal Boron Nitride Lattices"; Journal of Applied Physics, 111, (2012), 093512-1 - 093512-6 doi:10.1063/1.4710988. BibTeX
22.	A. Yazdanpanah, M. Pourfath, M. Fathipour, H. Kosina, S. Selberherr: "A Numerical Study of Line-Edge Roughness Scattering in Graphene Nanoribbons"; IEEE Transactions on Electron Devices, 59, (2012), 433 - 440 doi:10.1109/TED.2011.2173690. BibTeX
21.	A. Yazdanpanah Goharrizi, M. Pourfath, M. Fathipour, H. Kosina: "Device Performance of Graphene Nanoribbon Field-Effect Transistors in the Presence of Line-Edge Roughness"; IEEE Transactions on Electron Devices, 59, (2012), 3527 - 3532 doi:10.1109/TED.2012.2218817. BibTeX
20.	H. Karamitaheri, M. Pourfath, R. Faez, H. Kosina: "Geometrical Effects on the Thermoelectric Properties of Ballistic Graphene Antidot Lattices"; Journal of Applied Physics, 110, (2011), 054506-1 - 054506-6 doi:10.1063/1.3629990. BibTeX
19.	H. Karamitaheri, M. Pourfath, M. Pazoki, R. Faez, H. Kosina: "Graphene-Based Antidots for Thermoelectric Applications"; Journal of the Electrochemical Society, 158, (2011), K213 - K216 doi:10.1149/2.025112jes. BibTeX
18.	N. Manavizadeh, F. Raissi, E.A. Soleimani, M. Pourfath, S. Selberherr: "Performance Assessment of Nanoscale Field Effect Diodes"; IEEE Transactions on Electron Devices, 58, (2011), 2378 - 2384 doi:10.1109/TED.2011.2152844. BibTeX
17.	A. Yazdanpanah Goharrizi, M. Pourfath, M. Fathipour, H. Kosina, S. Selberherr: "An Analytical Model for Line-Edge Roughness Limited Mobility of Graphene Nanoribbons"; IEEE Transactions on Electron Devices, 58, (2011), 3725 - 3735 doi:10.1109/TED.2011.2163719. BibTeX
16.	M. Pourfath, H. Kosina: "Computational Study of Carbon-Based Electronics"; Journal of Computational Electronics, 8, (2009), 427 - 440 doi:10.1007/s10825-009-0285-z. BibTeX
15.	M. Pourfath, H. Kosina: "Formalism Application of the Non-Equilibrium Green's Function for the Numerical Analysis of Carbon Nanotube Fets"; Journal of Computational and Theoretical Nanoscience, 5, (2008), 1128 - 1137 doi:10.1166/jctn.2008.011. BibTeX
14.	M. Pourfath, H. Kosina, S. Selberherr: "Numerical Study of Quantum Transport in Carbon Nanotube Transistors"; Mathematics and Computers in Simulation, 79, (2008), 1051 - 1059 doi:10.1016/j.matcom.2007.09.004. BibTeX
13.	M. Pourfath, H. Kosina, S. Selberherr: "The Effect of Inelastic Phonon Scattering on Carbon Nanotube-Based Transistor Performance"; Journal of Physics: Conference Series, 109, (2008), 1 - 5 doi:10.1088/1742-6596/109/1/012029. BibTeX
12.	M. Karner, A. Gehring, S. Holzer, M. Pourfath, M. Wagner, W. Gös, M. Vasicek, O. Baumgartner, Ch. Kernstock, K. Schnass, G. Zeiler, T. Grasser, H. Kosina, S. Selberherr: "A Multi-Purpose Schrödinger-Poisson Solver for TCAD Applications"; Journal of Computational Electronics, 6, (2007), 179 - 182 doi:10.1007/s10825-006-0077-7. BibTeX
11.	M. Pourfath, H. Kosina: "The Effect of Phonon Scattering on the Switching Response of Carbon Nanotube Field-Effect Transistors"; Nanotechnology, 18, (2007), 424036 - 424041 doi:10.1088/0957-4484/18/42/424036. BibTeX
10.	M. Pourfath, H. Kosina, S. Selberherr: "Dissipative Transport in CNTFETs"; Journal of Computational Electronics, 6, (2007), 321 - 324 doi:10.1007/s10825-006-0113-7. BibTeX
9.	M. Pourfath, H. Kosina, S. Selberherr: "Geometry Optimization for Carbon Nanotube Transistors"; Solid-State Electronics, 51, (2007), 1565 - 1571 doi:10.1016/j.sse.2007.09.021. BibTeX
8.	M. Pourfath, H. Kosina, S. Selberherr: "Tunneling CNTFETs"; Journal of Computational Electronics, 6, (2007), 243 - 246 doi:10.1007/s10825-006-0099-1. BibTeX
7.	M. Pourfath, H. Kosina, S. Selberherr: "A Fast and Stable Poisson-Schrödinger Solver for the Analysis of Carbon Nanotube Transistors"; Journal of Computational Electronics, 5, (2006), 155 - 159 doi:10.1007/s10825-006-8836-z. BibTeX
6.	M. Pourfath, H. Kosina, S. Selberherr: "Rigorous Modeling of Carbon Nanotube Transistors"; Journal of Physics: Conference Series, 38, (2006), 29 - 32 doi:10.1088/1742-6596/38/1/008. BibTeX
5.	L.C. Castro, D.L. John, D.L. Pulfrey, M. Pourfath, A. Gehring, H. Kosina: "Method for Predicting f_T for Carbon Nanotube FETs"; IEEE Transactions on Nanotechnology, Vol. 4, (2005), 699 - 704 doi:10.1109/TNANO.2005.858603. BibTeX
4.	M. Pourfath, A. Gehring, E. Ungersböck, H. Kosina, S. Selberherr, B.-H. Cheong, W. Park: "Separated Carrier Injection Control in Carbon Nanotube Field-Effect Transistors"; Journal of Applied Physics, 97, (2005), 106103-1 - 106103-3 doi:10.1063/1.1897491. BibTeX
3.	M. Pourfath, E. Ungersböck, A. Gehring, B.-H. Cheong, W.J. Park, H. Kosina, S. Selberherr: "Optimization of Schottky Barrier Carbon Nanotube Field Effect Transistors"; Microelectronic Engineering, 81, (2005), 428 - 433 doi:10.1016/j.mee.2005.03.043. BibTeX
2.	M. Pourfath, E. Ungersböck, A. Gehring, H. Kosina, S. Selberherr, W.J. Park, B.-H. Cheong: "Numerical Analysis of Coaxial Double Gate Schottky Barrier Carbon Nanotube Field Effect Transistors"; Journal of Computational Electronics, 4, (2005), 75 - 78 doi:10.1007/s10825-005-7111-z. BibTeX
1.	E. Ungersböck, M. Pourfath, H. Kosina, A. Gehring, B.-H. Cheong, W.J. Park, S. Selberherr: "Optimization of Single-Gate Carbon-Nanotube Field-Effect Transistors"; IEEE Transactions on Nanotechnology, 4, (2005), 533 - 538 doi:10.1109/TNANO.2005.851402. BibTeX

Contributions to Books

5.	M. Thesberg, M. Pourfath, N. Neophytou, H. Kosina: "A Non-Equilibrium Green Functions Study of Energy-Filtering Thermoelectrics Including Scattering"; in "Large-Scale Scientific Computing, Lecture Notes in Computer Science", 9374, I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer International Publishing, 2015, ISBN: 978-3-319-26519-3, 301 - 308 doi:10.1007/978-3-319-26520-9_33. BibTeX
4.	H. Karamitaheri, M. Pourfath, R. Faez, H. Kosina: "An Investigation of the Geometrical Effects on the Thermal Conductivity of Graphene Antidot Lattices"; in "Dielectrics in Nanosystems -and- Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 3", Z. Karim, D. Misra, P. Srinivasan, Y. Obeng, S. De Gendt (ed); ECS Transactions, 2011, ISBN: 978-1-56677-864-0, 185 - 192 doi:10.1149/1.3569910. BibTeX
3.	M. Pourfath, H. Kosina: "Numerical Study of Quantum Transport in Carbon Nanotube-Based Transistors"; in "Encyclopedia of Nanoscience and Nanotechnology", H. Nalwa (ed); American Scientific Publishers, 2011, ISBN: 1-58883-168-x, 541 - 581. BibTeX
2.	M. Pourfath, H. Kosina, S. Selberherr: "Carbon Nanotube Based Transistors: A Computational Study"; in "28^th International Conference on the Physics of Semiconductors", American Institute of Physics, 2007, ISBN: 978-0-7354-0397-0, 1041 - 1042 doi:10.1063/1.2730253. BibTeX
1.	M. Pourfath, H. Kosina: "Fast Convergent Schrödinger-Poisson Solver for the Static and Dynamic Analysis of Carbon Nanotube Field Effect Transistors"; in "Large-Scale Scientific Computing, Lecture Notes in Computer Science", 3743, I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer Berlin Heidelberg, Berlin / Heidelberg, 2006, ISBN: 3-540-31994-8, 578 - 585 doi:10.1007/11666806_66. BibTeX

Talks and Poster Presentations (with Proceedings-Entry)

74.	M. Hosseini, M. Elahi, M. Pourfath, D. Esseni: "Strain Engineering of Single-Layer MoS2"; Talk: European Solid-State Device Research Conference (ESSDERC), Graz, Austria; 2015-09-14 - 2015-09-18; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2015), ISBN: 978-1-4673-7133-9, 314 - 317 doi:10.1109/ESSDERC.2015.7324777. BibTeX
73.	S. Nazemi, E. Soleimani, M. Pourfath, H. Kosina: "The Role of Surface Termination Geometry on the Ground-State and Optical Properties of Silicon Nano-Crystals: A Density Functional Theory Study"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 2015-09-09 - 2015-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7859-8, 333 - 336. BibTeX
72.	A. Kefayati, M. Pourfath, H. Kosina: "A Rigorous Study of Nanoscaled Transistors Based on Single-Layer MoS₂"; Poster: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 2015-09-02 - 2015-09-04; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2015), ISBN: 978-0-692-50554-0, 7 - 8. BibTeX
71.	M. Thesberg, M. Pourfath, N. Neophytou, H. Kosina: "Thermoelectric Power Factor Optimization in Nanocomposites by Energy Filtering Using NEGF"; Poster: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 2015-09-02 - 2015-09-04; in "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2015), ISBN: 978-0-692-50554-0, 4 page(s) . BibTeX
70.	M. Thesberg, M. Pourfath, N. Neophytou, H. Kosina: "Optimization of Energy Filtering for Power Factor Improvements Through Fully Quantum Mechanical Transport Simulations"; Talk: International Conference on Thermoelectrics & European Conference on Thermoelectrics (ICT&ECT), Dresden, Germany; 2015-06-28 - 2015-07-02; in "Proceedings of the 34th Annual International Conference on Thermoelectrics and the 13th European Conference on Thermoelectrics (ICT&ECT)", (2015), 1 page(s) . BibTeX
69.	M. Thesberg, M. Pourfath, N. Neophytou, H. Kosina: "Thermoelectric Efficiency Improvements through Grain Shape Optimization: A Non-Equilibrium Green´s Function Study"; Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 2015-06-08 - 2015-06-12; in "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2015), 70. BibTeX
68.	N. Neophytou, M. Thesberg, M. Pourfath, H. Kosina: "Calculations of the Thermopower in Materials with Nano-Inclusions Using Quantum Mechanical Simulations"; Talk: APS March Meeting, San Antonio, USA; 2015-03-02 - 2015-03-06; in "Bulletin of the American Physical Society (APS March Meeting)", (2015), 60/1, . BibTeX
67.	M. Thesberg, M. Pourfath, N. Neophytou, H. Kosina: "Optimization of Thermoelectric Properties in Cross-Plane Superlattices - A 1D NEGF Study"; Talk: APS March Meeting, San Antonio, USA; 2015-03-02 - 2015-03-06; in "Bulletin of the American Physical Society (APS March Meeting)", (2015), 60/1, . BibTeX
66.	M. Moradinasab, M. Pourfath, H. Kosina: "Improved Active Region Designs for Mode Locking in Quantum Cascade Lasers"; Poster: International Quantum Cascade Lasers School & Workshop, Policoro (Matera), Italy; 2014-09-07 - 2014-09-12; in "International Quantum Cascade Lasers School & Workshop 2014", (2014), 182 - 183. BibTeX
65.	M. Moradinasab, M. Pourfath, M. Fathipour, H. Kosina: "A Numerical Study of Line-Edge Roughness in Graphene Superlattice-Based Photodetectors"; Talk: International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), Palma de Mallorca, Spain; 2014-09-01 - 2014-09-04; in "Proceedings of the 14th International Conference on Numerical Simulation of Optoelectronic Devices", (2014), 1 - 2. BibTeX
64.	M. Moradinasab, M. Pourfath, H. Kosina: "An Instability Study in Terahertz Quantum Cascade Lasers"; Talk: Int. Conf. on Superlattices, Nanostructures and Nanodevices (ICSNN), Savannah, GA, USA; 2014-08-03 - 2014-08-08; in "Proc.Intl.Conf.on Superlattices, Nanostructures and Nanodevices (ICSNN)", (2014), 10. BibTeX
63.	S. Touski, Z. Chaghazardi, M. Pourfath, M. Moradinasab, R. Faez, H. Kosina: "Spin Transport in Graphene Nanoribbons: The Role of Surface-Corrugation"; Talk: International Workshop on Computational Electronics (IWCE), Paris, France; 2014-06-03 - 2014-06-06; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6, 101 - 102. BibTeX
62.	S. Touski, M. Pourfath, H. Kosina: "Electronic Transport in Graphene Nanoribbons in the Presence of Substrate Surface Corrugation"; Talk: International Workshop on Computational Electronics (IWCE), Nara, Japan; 2013-06-04 - 2013-06-07; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7, 108 - 109. BibTeX
61.	M. Moradinasab, M. Pourfath, H. Kosina: "Spin Filtering in Zigzag Graphene Nanoribbons Using 7-5 Defects"; Poster: Graphene Week, Chemnitz, Germany; 2013-06-02 - 2013-06-07; in "Book of Abstracts", (2013), 250. BibTeX
60.	H. Karamitaheri, M. Pourfath, N. Neophytou, H. Kosina: "Theoretical Study of a Zigzag Graphene Nanoribbon Field Effect Transistor"; Talk: Meeting of the Electrochemical Society (ECS), Honolulu, USA; 2012-10-07 - 2012-10-12; in "ECS Meeting", (2012), 1 page(s) . BibTeX
59.	H. Karamitaheri, M. Pourfath, H. Kosina: "Highly Sensitive Graphene Antidot Lattice Chemiresitor Sensor"; Poster: Graphene Week, Delft, Netherlands; 2012-06-04 - 2012-06-08; in "Book of Abstracts", (2012), 1 page(s) . BibTeX
58.	M. Moradinasab, H. Karamitaheri, M. Pourfath, H. Kosina: "On the Role of Stone-Wales Defects on the Performance of Graphene Nanoribbon Photo Detectors"; Poster: Graphene Week, Delft, Netherlands; 2012-06-04 - 2012-06-08; in "Book of Abstracts", (2012), 1 page(s) . BibTeX
57.	H. Karamitaheri, N. Neophytou, M. Pourfath, H. Kosina: "Engineering the Thermoelectric Power Factor of Metallic Graphene Nanoribbons"; Talk: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 2012-05-22 - 2012-05-25; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2012), 77 - 78. BibTeX
56.	M. Moradinasab, H. Nematian, M. Noei, M. Pourfath, M. Fathipour, H. Kosina: "Edge Roughness Effects on the Optical Properties of Zigzag Graphene Nanoribbons: A First Principles Study"; Poster: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 2012-05-22 - 2012-05-25; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2012), 249 - 250. BibTeX
55.	H. Nematian, M. Moradinasab, M. Noei, M. Pourfath, M. Fathipour, H. Kosina: "A Theoretical Study of BN-Confined Graphene Nanoribbon Based Resonant Tunneling Diodes"; Poster: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 2012-05-22 - 2012-05-25; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2012), 217 - 218. BibTeX
54.	M. Moradinasab, H. Nematian, M. Pourfath, M. Fathipour, H. Kosina: "Theoretical Study of Single and Bilayer Graphene Nanoribbons Photodetectors"; Talk: Meeting of the Electrochemical Society (ECS), Seattle, Washington, USA; 2012-05-06 - 2012-05-10; in "ECS Meeting", (2012), 1 page(s) . BibTeX
53.	H. Karamitaheri, M. Pourfath, R. Faez, H. Kosina: "An Investigation of ZGNR-Based Transistors"; Talk: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 2011-12-07 - 2011-12-09; in "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3, 2 page(s) . BibTeX
52.	H. Karamitaheri, M. Pourfath, N. Neophytou, M. Pazoki, H. Kosina: "First Principle Study of Ballistic Thermal Conductance of Graphene Antidot Lattices for Thermoelectric Applications"; Talk: Carbon-Based Low Dimensional Materials (Carbomat), Catania, Italy; 2011-12-05 - 2011-12-07; in "Proceedings of the 2nd CARBOMAT Workshop", (2011), ISBN: 978-88-8080-124-5, 19 - 22. BibTeX
51.	H. Karamitaheri, M. Pourfath, R. Faez, H. Kosina: "Transport Gap Engineering in Zigzag Graphene Nanoribbons"; Poster: Trends in Nanotechnology Conference (TNT), Canary Islands, Spain; 2011-11-21 - 2011-11-25; in "Poster Abstracts Book (TNT 2011)", (2011), 2. BibTeX
50.	H. Karamitaheri, M. Pourfath, R. Faez, H. Kosina: "An Investigation of the Geometrical Effects on the Thermal Conductivity of Graphene Antidot Lattices"; Talk: 219^th ECS Meeting, Montreal, Canada; 2011-05-01 - 2011-05-06; in "219^th ECS Meeting", (2011), 1 page(s) . BibTeX
49.	H. Karamitaheri, M. Pourfath, R. Faez, H. Kosina: "Hydrogen-Passivated Graphene Antidot Structures for Thermoelectric Applications"; Poster: 12th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, Linz, Austria; 2011-04-18 - 2011-04-20; in "Proceedings Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micro-systems", (2011), ISBN: 978-1-4577-0105-4, 4 page(s) doi:10.1109/ESIME.2011.5765811. BibTeX
48.	N. Manavizadeh, M. Pourfath, F. Raissi, E. Asl-Soleimani: "A Comprehensive Study of Nanoscale Field Effect Diodes"; Poster: 12th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, Linz, Austria; 2011-04-18 - 2011-04-20; in "Proceedings Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micro-systems", (2011), ISBN: 978-1-4577-0105-4, 4 page(s) doi:10.1109/ESIME.2011.5765817. BibTeX
47.	A. Yazdanpanah Goharrizi, M. Pourfath, M. Fathipour, H. Kosina: "Compact Model for the Electronic Properties of Edge-Disordered Graphene Nanoribbons"; Poster: 12th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, Linz, Austria; 2011-04-18 - 2011-04-20; in "Proceedings Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micro-systems", (2011), ISBN: 978-1-4577-0105-4, 4 page(s) doi:10.1109/ESIME.2011.5765816. BibTeX
46.	M. Pourfath, V. Sverdlov, S. Selberherr: "Transport Modeling for Nanoscale Semiconductor Devices"; Talk: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Shanghai; (invited) 2010-11-01 - 2010-11-04; in "Proceedings of the International Conference on Solid-State and Integrated Circuit Technology (ICSICT)", (2010), 4, ISBN: 978-1-4244-5799-1, 1737 - 1740. BibTeX
45.	M. Pourfath, A. Yazdanpanah Goharrizi, M. Fathipour, H. Kosina: "On the Role of Line-Edge Roughness on the Diffusion and Localization in GNRs"; Talk: International Workshop on Computational Electronics (IWCE), Pisa, Italy; 2010-10-26 - 2010-10-29; in "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2010), ISBN: 978-1-4244-9381-4, 45 - 48 doi:10.1109/IWCE.2010.5677936. BibTeX
44.	H. Karamitaheri, M. Pourfath, R. Faez, H. Kosina: "Thermal Properties of Graphene Antidots"; Poster: Nanoelectronics Days 2010, Aachen; 2010-10-04 - 2010-10-07; in "Abstract Book of the Nanoelectronics Days 2010", (2010), 102. BibTeX
43.	M. Pourfath, A. Yazdanpanah Goharrizi, H. Kosina: "The Effect of Line-Edge Roughness on the Electronic Properties of Graphene Nano-Ribbons"; Talk: Ψ_k - 2010 Conference, Berlin; 2010-09-12 - 2010-09-16; in "Abstract Book", (2010), 419. BibTeX
42.	M. Pourfath, V. Sverdlov, S. Selberherr: "Modeling Demands for Nanoscale Devices"; Talk: Device Research Conference, South Bend; (invited) 2010-06-21 - 2010-06-23; in "Proceedings of the Device Research Conference (DRC)", (2010), ISBN: 978-1-4244-7870-5, 211 - 214. BibTeX
41.	M. Pourfath, S. Selberherr: "Modeling Optical Sensors Based on Carbon Nanotubes"; Talk: International Symposium on Microwave and Optical Technology (ISMOT), New Delhi; (invited) 2009-12-16 - 2009-12-19; in "Proceedings of the International Symposium on Microwave and Optical Technology (ISMOT)", (2009), 1381 - 1384. BibTeX
40.	M. Pourfath, S. Selberherr: "Carbon-Based Electronics: A Computational Study"; Talk: International Workshop on the Physics of Semiconductor Devices (IWPSD), New Delhi; (invited) 2009-12-15 - 2009-12-19; in "Proceedings of the International Workshop on the Physics of Semiconductor Devices (IWPSD)", (2009), 6 page(s) . BibTeX
39.	M. Pourfath, H. Kosina, S. Selberherr: "Theoretical Study of Graphene Nanoribbon Photo-Detectors"; Talk: International Symposium on Advanced Nanostructures and Nano-Devices (ISANN), Kaanapali; 2009-11-30 - 2009-12-04; in "Abstracts International Symposium on Advanced Nanostructures and Nano-Devices (ISANN)", (2009), 178 - 179. BibTeX
38.	M. Pourfath, O. Baumgartner, H. Kosina, S. Selberherr: "Performance Evaluation of Graphene Nanoribbon Infrared Photodetectors"; Talk: Numerical Simulation of Optoelectronic Devices (NUSOD), Gwangju; 2009-09-14 - 2009-09-17; in "Proceedings of the 9^th International Conference on Numerical Simulation of Optoelectronic Devices", (2009), ISBN: 978-1-4244-4180-8, 13 - 14. BibTeX
37.	M. Pourfath, H. Kosina: "Carbon Based Electronics: A Computational Study"; Talk: Quantum Systems and Devices: Analysis, Simulations, Applications, Beijing; (invited) 2009-04-20 - 2009-04-24; in "Quantum Systems and Devices: Analysis, Simulations, Applications", (2009), 18. BibTeX
36.	M. Pourfath, S. Selberherr: "Modeling Current Transport in Carbon Nanotube Transistors"; Talk: Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong; (invited) 2008-12-08 - 2008-12-10; in "IEEE International Conference on Electron Devices and Solid-State Circuit 2008", (2008), ISBN: 978-1-4244-2540-2, 6 page(s) . BibTeX
35.	M. Pourfath, S. Selberherr: "Analysis of Carbon Nanotube Photo-Detectors"; Talk: Advanced Heterostructures and Nanostructures Workshop (AHNW), Kona; (invited) 2008-12-07 - 2008-12-12; in "Abstracts Advanced Heterostructures and Nanostructures Workshop (AHNW)", (2008), TU-06. BibTeX
34.	A. Yazdanpanah Goharrizi, M. Pourfath, M. Fathipour, H. Kosina, S. Selberherr: "A Numerical Study of Graphene Nano-Ribbon based Resonant Tunneling Diodes"; Talk: International Symposium on Graphene Devices: Technology, Physics, and Modeling (ISGD), Japan; 2008-11-17 - 2008-11-19; in "International Symposium on Graphene Devices: Technology, Physics, and Modeling", (2008), 66 - 67. BibTeX
33.	M. Pourfath, H. Kosina, S. Selberherr: "Current Transport in Carbon Nanotube Transistors"; Talk: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Beijing; (invited) 2008-10-20 - 2008-10-23; in "The 9^th Internationl Conference on Solid-State and Integrated-Circuit Technology", (2008), ISBN: 978-1-4244-2186-2, 361 - 364. BibTeX
32.	M. Pourfath, H. Kosina, S. Selberherr: "Reduction of the Dark-Current in Carbon Nanotube Photo-Detectors"; Talk: European Solid-State Device Research Conference (ESSDERC), Edinburgh; 2008-09-15 - 2008-09-19; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2008), 214 - 217. BibTeX
31.	M. Pourfath, H. Kosina: "Numerical Study of Carbon Nanotube Infra-Red Photo-Detectors"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 2008-09-09 - 2008-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7, 81 - 84 doi:10.1109/SISPAD.2008.4648242. BibTeX
30.	M. Pourfath, O. Baumgartner, H. Kosina: "On the Non-locality of the Electron-Photon Self-Energy: Application to Carbon Nanotube Photo-Detectors"; Talk: Numerical Simulation of Optoelectronic Devices (NUSOD), Nottingham; 2008-09-01 - 2008-09-04; in "Proceedings of the 8^{th} International Conference on Numerical Simulation of Optoelectronic Devices", (2008), ISBN: 978-1-4244-2307-1, 99 - 100 doi:10.1109/NUSOD.2008.4668261. BibTeX
29.	M. Pourfath, V. Sverdlov, H. Kosina: "On the Role of Off‐Diagonal Dephasing in Carbon Nanotube Based Photo‐Detectors"; Talk: 1^st FoNE Conference Nanoelectronics 2008, Taormina, Italy; 2008-06-29 - 2008-07-03; in "1^st Fone Conference Nanoelectronics 2008", (2008), 41. BibTeX
28.	M. Pourfath, S. Selberherr: "Current Transport in Carbon Nanotube Transistors"; Talk: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Cancun; (invited) 2008-04-28 - 2008-04-30; in "Proceedings of the 7th International Caribbean Conference on Devices, Circuits and Systems", (2008), ISBN: 978-1-4244-1957-9, 6 page(s) . BibTeX
27.	M. Karner, O. Baumgartner, M. Pourfath, M. Vasicek, H. Kosina: "Investigation of a MOSCAP Using NEGF"; Talk: International Semiconductor Device Research Symposium (ISDRS), Maryland; 2007-12-12 - 2007-12-14; in "2007 International Semiconductor Device Research Symposium", (2007), ISBN: 978-1-4244-1892-3, 2 page(s) . BibTeX
26.	M. Pourfath, H. Kosina, S. Selberherr: "The Effect of Inelastic Phonon Scattering on Carbon Nanotube-Based Transistor Performance"; Talk: International Symposium on Advanced Nanodevices and Nanotechnology (ISANN), Waikoloa, Hawaii; 2007-12-02 - 2007-12-07; in "International Symposium on Advanced Nanodevices and Nanotechnology", (2007), 37 - 38. BibTeX
25.	M. Pourfath, H. Kosina: "The Effect of Optical Phonon Scattering on the On-Current and Gate Delay Time of CNT-FETs"; Poster: T. Grasser, S. Selberherr (ed); International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 2007-09-25 - 2007-09-27; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2007), 12, ISBN: 978-3-211-72860-4, 309 - 312 doi:10.1007/978-3-211-72861-1_74. BibTeX
24.	M. Pourfath, H. Kosina, S. Selberherr: "The Role of Inelastic Electron-Phonon Interaction on the On-Current and Gate Delay Time of CNT-FETs"; Talk: European Solid-State Device Research Conference (ESSDERC), München; 2007-09-11 - 2007-09-13; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2007), ISBN: 1-4244-1123-8, 239 - 242. BibTeX
23.	O. Baumgartner, M. Karner, S. Holzer, M. Pourfath, T. Grasser, H. Kosina: "Adaptive Energy Integration of Non-Equilibrium Green´s Functions"; Poster: The Nanotechnology Conference and Trade Show, Santa Clara; 2007-05-19 - 2007-05-24; in "NSTI Nanotech Proceedings", (2007), 3, ISBN: 1-4200-6184-4, 145 - 148. BibTeX
22.	M. Pourfath, H. Kosina, S. Selberherr: "A Comprehensive Study of Carbon Nanotube Based Transistors: The Effects of Geometrical, Interface Barrier, and Scattering Parameters"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 2006-12-11 - 2006-12-13; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2006), ISBN: 1-4244-0438-x, 819 - 822 doi:10.1109/IEDM.2006.346739. BibTeX
21.	M. Pourfath, H. Kosina, S. Selberherr: "Optimal Design for Carbon Nanotube Transistors"; Talk: European Solid-State Device Research Conference (ESSDERC), Montreux; 2006-09-19 - 2006-09-21; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2006), ISBN: 1-4244-0301-4, 210 - 213. BibTeX
20.	M. Pourfath, H. Kosina, B.-H. Cheong, W.J. Park, S. Selberherr: "The Effect of Electron-Phonon Interaction on the Static and Dynamic Response of CNTFETs"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 2006-09-06 - 2006-09-08; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5, 208 - 211 doi:10.1109/SISPAD.2006.282873. BibTeX
19.	M. Pourfath, H. Kosina: "On the Effect of Electron-Phonon Interaction Parameters on the Performance of Carbon Nanotube Based Transistors"; Poster: Trends in Nanotechnology Conference (TNT), Grenoble; 2006-09-04 - 2006-09-08; in "Proceedings Trends in Nanotechnology", (2006), 2 page(s) . BibTeX
18.	M. Pourfath, H. Kosina, S. Selberherr: "Optimizing the Performance of Carbon Nanotube Transistors"; Poster: IEEE Conference on Nanotechnology (NANO), Cincinnati; 2006-06-17 - 2006-06-20; in "Proceedings of the IEEE Conference on Nanotechnology (NANO)", (2006), ISBN: 1-4244-0078-3, 520 - 523 doi:10.1109/NANO.2006.247702. BibTeX
17.	M. Karner, A. Gehring, S. Holzer, M. Pourfath, M. Wagner, H. Kosina, T. Grasser, S. Selberherr: "VSP - A Multi-Purpose Schrödinger-Poisson Solver for TCAD Applications"; Poster: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 2006-05-25 - 2006-05-27; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1, 255 - 256. BibTeX
16.	M. Pourfath, H. Kosina, S. Selberherr: "Dissipative Transport in CNTFETs"; Talk: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 2006-05-25 - 2006-05-27; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1, 345 - 346. BibTeX
15.	M. Pourfath, H. Kosina, S. Selberherr: "Tunneling-CNTFETs"; Poster: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 2006-05-25 - 2006-05-27; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1, 291 - 292. BibTeX
14.	M. Pourfath, H. Kosina, S. Selberherr: "On the Effect of Scattering on the Performance of Carbon Nanotube Field-Effect Transistors"; Talk: Iranian Conference on Electrical Engineering (ICEE), Tehran; 2006-05-16 - 2006-05-18; in "Proceedings of the 14th Iranian Conference on Electrical Engineering ICEE 2006", (2006), 5 page(s) . BibTeX
13.	M. Pourfath, H. Kosina, S. Selberherr: "Rigorous Modeling of Carbon Nanotube Field Effect Transistors"; Poster: International Conference on New Phenomena in Mesoscopic Structures, Maui; 2005-11-27 - 2005-12-02; in "Abstracts Collection Seventh International Conference on New Phenomena in Mesoscopic Systems Fifth International Conference on Surface and Interfaces in Mesoscopic Devices", (2005), 155 - 156. BibTeX
12.	M. Pourfath, H. Kosina, B.-H. Cheong, W.J. Park, S. Selberherr: "Improving DC and AC Characteristics of Ohmic Contact Carbon Nanotube Field Effect Transistors"; Talk: European Solid-State Device Research Conference (ESSDERC), Grenoble; 2005-09-12 - 2005-09-16; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2005), Cdrom Isbn: 0-7803-9204-3, ISBN: 0-7803-9203-5, 541 - 544. BibTeX
11.	M. Pourfath, H. Kosina, B.-H. Cheong, W.J. Park: "Geometry-dependence of the DC and AC Response of Ohmic Contact Carbon Nanotube Field Effect Transistor"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 2005-09-01 - 2005-09-03; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2005), ISBN: 4-9902762-0-5, 91 - 94 doi:10.1109/SISPAD.2005.201480. BibTeX
10.	M. Pourfath, H. Kosina, B.-H. Cheong, W.J. Park, S. Selberherr: "The Effect of Device Geometry on the Static and Dynamic Response of Carbon Nanotube Field Effect Transistors"; Talk: IEEE Conference on Nanotechnology (NANO), Nagoya; 2005-07-11 - 2005-07-15; in "Proceedings of the IEEE Conference on Nanotechnology (NANO)", (2005), Cdrom Isbn: 0-7803-9200-0, 4 page(s) doi:10.1109/NANO.2005.1500641. BibTeX
9.	M. Pourfath, H. Kosina, S. Selberherr: "A Fast and Stable Poisson-Schrödinger Solver for the Analysis of Carbon Nanotube Transistors"; Talk: Modelling and Simulation of Electron Devices (MSED), Pisa; 2005-07-04 - 2005-07-05; in "15^th Workshop on Modelling and Simulation of Electron Devices", (2005), 95 - 96. BibTeX
8.	M. Pourfath, W.J. Park, H. Kosina, S. Selberherr: "Fast Convergent Schrödinger-Poisson Solver for the Static and Dynamic Analysis of Carbon Nanotube Field Effect Transistors"; Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 2005-06-06 - 2005-06-10; in "Abstracts of the 5th International Conference on Large-Scale Scientific Computations", (2005), 50 - 51. BibTeX
7.	M. Pourfath, A. Gehring, B.-H. Cheong, W.J. Park, H. Kosina, S. Selberherr: "Vertically Grown Coaxial Double Gate Carbon Nanotube Field Effect Transistors for Tera Level Integration"; Talk: The Nanotechnology Conference and Trade Show, Anaheim; 2005-05-08 - 2005-05-12; in "NSTI Nanotech Technical Proceedings", (2005), Vol. 3 (CDROM ISBN: 0-9767985-4-9), ISBN: 0-9767985-2-2, 128 - 131. BibTeX
6.	M. Pourfath, B.-H. Cheong, W. Park, H. Kosina, S. Selberherr: "High Performance Carbon Nanotube Field Effect Transistor with the Potential for Tera Level Integration"; Talk: International Conference on Ultimate Integration of Silicon (ULIS), Bologna; 2005-04-07 - 2005-04-08; in "ULIS 2005 6^th International Conference on Ultimate Integration of Silicon Proceedings of the Conference", (2005), ISBN: 8890084707, 95 - 98. BibTeX
5.	M. Pourfath, E. Ungersböck, A. Gehring, W. Park, B.-H. Cheong, H. Kosina, S. Selberherr: "Numerical Analysis of Coaxial Double Gate Schottky Barrier Carbon Nanotube Field Effect Transistors"; Poster: International Workshop on Computational Electronics (IWCE), West Lafayette, IN, USA; 2004-10-24 - 2004-10-27; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2004), ISBN: 0-7803-8649-3, 237 - 238 doi:10.1109/IWCE.2004.1407414. BibTeX
4.	M. Pourfath, E. Ungersböck, A. Gehring, B.-H. Cheong, W. Park, H. Kosina, S. Selberherr: "Improving the Ambipolar Behavior of Schottky Barrier Carbon Nanotube Field Effect Transistors"; Talk: European Solid-State Device Research Conference (ESSDERC), Leuven; 2004-09-21 - 2004-09-23; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2004), ISBN: 0780384784, 429 - 432. BibTeX
3.	M. Pourfath, E. Ungersböck, A. Gehring, B.-H. Cheong, W. Park, H. Kosina, S. Selberherr: "Optimization of Schottky Barrier Carbon Nanotube Field Effect Transistors"; Talk: Nano and Giga Challenges in Microelectronics (NGCM), Krakau; 2004-09-13 - 2004-09-17; in "Nano and Giga Challenges in Microelectronics Book of Abstracts", (2004), 201. BibTeX
2.	M. Pourfath, E. Ungersböck, A. Gehring, B.-H. Cheong, H. Kosina, S. Selberherr: "Three-Dimensional Analysis of Schottky Barrier Carbon Nanotube Field Effect Transistors"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 2004-09-02 - 2004-09-04; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2004), ISBN: 3211224688, 149 - 152 doi:10.1007/978-3-7091-0624-2_35. BibTeX
1.	E. Ungersböck, M. Pourfath, A. Gehring, H. Kosina, B.-H. Cheong, S. Selberherr: "Optimization of Carbon Nanotube Field Effect Transistors"; Poster: Symposium on Nano Device Technology (SNDT), Hsinchu; 2004-05-12 - 2004-05-13; in "Proceedings of the Symposium on Nano Device Technology", (2004), 117 - 120. BibTeX

Talks and Poster Presentations (without Proceedings-Entry)

3.	M. Thesberg, N. Neophytou, M. Pourfath, H. Kosina: "Power Factor Degradation Mechanisms in Energy-Filtering Thermoelectric Materials"; Talk: Energy-Materials-Nanotechnology Meeting on Thermoelectric Materials (EMN), Orlando, USA; (invited) 2016-02-22 - 2016-02-25; . BibTeX
2.	M. Moradinasab, M. Pourfath, O. Baumgartner, H. Kosina: "Performance Optimization and Instability Study in Ring Cavity Quantum Cascade Lasers"; Poster: The 12th International Conference on Intersubband Transitions in Quantum Wells (ITQW), New York, USA; 2013-09-15 - 2013-09-20; . BibTeX
1.	M. Pourfath: "Quantum Transport in Graphene-Based Devices: A Computational Study"; Talk: 17th Annual IASBS Meeting on Condensed Matter Physics, Zanjan, Iran; (invited) 2011-05-26 - 2011-05-27; . BibTeX

Habilitation Theses

1.	M. Pourfath: "Modeling Nanoelectric Devices"; TU Wien, Fakultät für Elektrotechnik und Informationstechnik, (2016), . BibTeX

Doctor's Theses (authored and supervised)

1.	M. Pourfath: "Numeric Study of Quantum Transport in Carbon Nanotube-Based Transistors"; Reviewer: H. Kosina, E. Bertagnolli; Institut für Mikroelektronik, 2007, oral examination: 2007-07-03. BibTeX

Scientific Reports

5.	H. Ceric, T. Grasser, R. Orio, M. Pourfath, M. Vasicek, S. Selberherr: "VISTA Status Report July 2008"; (2008), 38 page(s) . BibTeX
4.	H. Ceric, S. Dhar, G. Karlowatz, L. Li, M. Pourfath, S. Selberherr: "VISTA Status Report June 2007"; (2007), 29 page(s) . BibTeX
3.	M. Pourfath, H. Kosina: "Simulation of Carbon Nanotube Transistors"; (2007), 42 page(s) . BibTeX
2.	S. Dhar, L. Li, M. Pourfath, M. Spevak, V. Sverdlov, S. Selberherr: "VISTA Status Report June 2006"; (2006), 32 page(s) . BibTeX
1.	A. Gehring, M. Pourfath, E. Ungersböck, S. Wagner, W. Wessner, S. Selberherr: "VISTA Status Report December 2004"; (2004), 32 page(s) . BibTeX

Patents

2.	W. Park, B.-H. Cheong, E.-J. Bae, H. Kosina, M. Pourfath: "Transistor with Carbon Nanotube Channel and Method of Manufacturing the Same"; Patent: United States, No. US 2008/0121996 A1 ; submitted: 2005-09-13, granted: 2008-05-29. BibTeX
1.	W. Park, B.-H. Cheong, E.-J. Bae, H. Kosina, M. Pourfath: "Transistor with Carbon Nanotube Channel and Method of Manufacturing the Same"; Patent: Europe, No. EP 1 655 791 A1 ; submitted: 2005-09-09, granted: 2006-05-10. BibTeX