Publications Rüdiger Quay
38 records
| 2. | R. Quay: "Gallium Nitride Electronics"; R. Hull, R.M. Osgood, J. Parisi, H. Warlimont (ed); Springer-Verlag, Berlin-Heidelberg, (2008), ISBN: 978-3-540-71890-1, 469 page(s) doi:10.1007/978-3-540-71892-5. BibTeX |
| 1. | V. Palankovski, R. Quay: "Analysis and Simulation of Heterostructure Devices"; S. Selberherr (ed); Springer-Verlag, Wien - New York, (2004), ISBN: 978-3-7091-7193-6, 309 page(s) doi:10.1007/978-3-7091-0560-3. BibTeX |
| 6. | S. Vitanov, V. Palankovski, S. Maroldt, R. Quay, S. Murad, T. Rödle, S. Selberherr: "Physics-Based Modeling of GaN HEMTs"; IEEE Transactions on Electron Devices, 59, (2012), 685 - 693 doi:10.1109/TED.2011.2179118. BibTeX |
| 5. | S. Maroldt, D. Wiegner, S. Vitanov, V. Palankovski, R. Quay, O. Ambacher: "Efficient AlGaN/GaN Linear and Digital-Switch-Mode Power Amplifiers for Operation at 2 GHz"; IEICE Transactions on Electronics, E93-C, (2010), 1238 - 1244. BibTeX |
| 4. | S. Vitanov, V. Palankovski, S. Maroldt, R. Quay: "High-Temperature Modeling of AlGaN/GaN HEMTs"; Solid-State Electronics, 54, (2010), 1105 - 1112 doi:10.1016/j.sse.2010.05.026. BibTeX |
| 3. | V. Palankovski, R. Quay, S. Selberherr: "Industrial Application of Heterostructure Device Simulation"; IEEE Journal of Solid-State Circuits, 36, (invited) (2001), 1365 - 1370 doi:10.1109/4.944664. BibTeX |
| 2. | R. Quay, K. Hess, R. Reuter, M. Schlechtweg, T. Grave, V. Palankovski, S. Selberherr: "Nonlinear Electronic Transport and Device Performance of HEMTs"; IEEE Transactions on Electron Devices, 48, (2001), 210 - 217 doi:10.1109/16.902718. BibTeX |
| 1. | R. Quay, C. Moglestue, V. Palankovski, S. Selberherr: "A Temperature Dependent Model for the Saturation Velocity in Semiconductor Materials"; Materials Science in Semiconductor Processing, 3, (2000), 149 - 155 doi:10.1016/S1369-8001(00)00015-9. BibTeX |
| 1. | S. Vitanov, V. Palankovski, R. Quay, E. Langer: "Modeling of Electron Transport in GaN-Based Materials and Devices"; in "AIP Conference Proceedings, Vol. 893", American Institute of Physics, 2007, ISBN: 978-0-7354-0397-0, 1399 - 1400. BibTeX |
| 26. | S. Vitanov, V. Palankovski, S. Maroldt, R. Quay: "Non-Linearity of Transconductance and Source-Gate Resistance of HEMTs"; Poster: European Solid-State Device Research Conference (ESSDERC), Sevilla; 2010-09-14 - 2010-09-16; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2010), ISBN: 978-84-693-6437-6, 4 page(s) . BibTeX |
| 25. | S. Vitanov, V. Palankovski, S. Maroldt, R. Quay: "High-Temperature Modeling of AlGaN/GaN HEMTs"; Talk: International Semiconductor Device Research Symposium (ISDRS), Maryland; 2009-12-09 - 2009-12-11; in "2009 International Semiconductor Device Research Symposium", (2009), ISBN: 978-1-4244-6031-1, 2 page(s) doi:10.1109/ISDRS.2009.5378300. BibTeX |
| 24. | S. Vitanov, V. Palankovski, S. Maroldt, R. Quay: "A Simulation Study of Enhancement-Mode AlGaN/GaN HEMTs with Recessed Gates"; Talk: European Workshop on Heterostructure Technology, Guenzburg/Ulm; 2009-11-02 - 2009-11-04; in "HETECH 2009 Book of Abstracts", (2009), 109 - 110. BibTeX |
| 23. | S. Vitanov, V. Palankovski, G. Pozzovivo, J. Kuzmik, R. Quay: "Systematical Study of InAlN/GaN Devices by Numerical Simulation"; Talk: European Workshop on Heterostructure Technology, Venice; 2008-11-03 - 2008-11-05; in "HETECH 2008 Book of Abstracts", (2008), ISBN: 978-88-6129-296-3, 159 - 160. BibTeX |
| 22. | S. Vitanov, V. Palankovski, S. Murad, T. Rödle, R. Quay, S. Selberherr: "Predictive Simulation of AlGaN/GaN HEMTs"; Talk: IEEE Compound Semiconductor IC Symposium (CSICS), Portland; 2007-10-14 - 2007-10-17; in "IEEE Compound Semiconductor Integrated Circuit Symposium Technical Digest 2007", (2007), ISBN: 1-4244-1022-3, 131 - 134 doi:10.1109/CSICS07.2007.31. BibTeX |
| 21. | S. Vitanov, V. Palankovski, S. Murad, T. Rödle, R. Quay, S. Selberherr: "Hydrodynamic Modeling of AlGaN/GaN HEMTs"; Talk: T. Grasser, S. Selberherr (ed); International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 2007-09-25 - 2007-09-27; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2007), 12, ISBN: 978-3-211-72860-4, 273 - 276 doi:10.1007/978-3-211-72861-1_65. BibTeX |
| 20. | S. Vitanov, V. Palankovski, R. Quay, E. Langer: "Modeling of Electron Transport in GaN-based Materials and Devices"; Poster: 28th International Conference on the Physics of Semiconductors, Wien; 2006-07-24 - 2006-07-28; in "28th International Conference on the Physics of Semiconductors", (2007), 244. BibTeX |
| 19. | V. Palankovski, S. Vitanov, R. Quay: "Field-Plate Optimization of AlGaN/GaN HEMTs"; Talk: IEEE Compound Semiconductor IC Symposium (CSICS), San Antonio; 2006-11-12 - 2006-11-15; in "IEEE Compound Semiconductor Integrated Circuit Symposium Technical Digest", (2006), ISBN: 1-4244-0126-7, 107 - 110 doi:10.1109/CSICS.2006.319926. BibTeX |
| 18. | M. O´Droma, A. Goacher, E. Aschbacher, E. Bertran, P. Colantonio, S. Donati Guerrieri, F. Filicori, M. Gadringer, J. Luger, A. Meazza, M. Olavsbraten, J. Portilla, R. Quay, A. Zhu, K. Aamo, J. Berenguer, V. Camarchia, N. Carpenzano, F. Casas, A. Cesare, J. Collantes, C. Devlin, G. Ghione, P. Gilabert, J. Jugo, Y. Lei, T. Mathiesen, N. Mgebrishvili, G. Montoro, T. Parra, M. Pirola, M. Rossi, J. Santiago, T.J. Brazil, G. Magerl: "RF Power Amplifier Linearisation - an Overview"; Talk: Target Days (TARGET), Frascati, Italien; (invited) 2006-10-16 - 2006-10-18; in "Target Days 2006, Book of Proceedings", (2006), ISBN: 3-902477-07-5, 9 - 12. BibTeX |
| 17. | S. Vitanov, V. Palankovski, R. Quay, E. Langer: "Two-Dimensional Numerical Simulation of AlGaN/GaN HEMTs"; Talk: Target Days (TARGET), Frascati; 2006-10-16 - 2006-10-18; in "TARGET Days 2006 Book of Proceedings", (2006), ISBN: 3-902477-07-5, 81 - 84. BibTeX |
| 16. | Ch. Schuberth, H. Arthaber, M. Mayer, G. Magerl, R. Quay, F. Van Raay: "Load Pull Characterization of GaN/AlGaN HEMTs"; Poster: INMMIC -International Workshop on Integrated Nonlinear Microwave and Millimeter-Wave Circuits, Aveiro, Portugal; 2006-01-30 - 2006-01-31; in "2006 INMMIC Proceedings", (2006), 3 page(s) . BibTeX |
| 15. | R. Quay, J. Würfl, D. Wiegner, G. Fischer, Ch. Schuberth, G. Magerl: "GaN/AlGaN HEMTs for Highly Linear Communication Applications in L-Frequency band"; Talk: GigaHertz, Uppsala, Sweden; 2005-11-08 - 2005-11-09; in "GigaHertz 2005", (2005), 4 page(s) . BibTeX |
| 14. | M. O´Droma, J. Portilla, E. Bertran, S. Donati, T. Brazil, M. Rupp, R. Quay: "Linearisation Issues in Microwave Amplifiers"; Talk: GAAS, Amsterdam; 2004-10-11 - 2004-10-12; in "Proceedings of the European Microwave Week, 12th GAAS International Symposium", (2004), 199 - 202. BibTeX |
| 13. | S. Wagner, V. Palankovski, R. Quay, T. Grasser, S. Selberherr: "Numerical Simulation of High-Speed High-Breakdown Indium Phosphide HBTs"; Talk: International Workshop on the Physics of Semiconductor Devices (IWPSD), Madras; 2003-12-16 - 2003-12-20; in "Proceedings of the Twelfth International Workshop on the Physics of Semiconductor Devices", (2003), ISBN: 81-7319-567-6, 836 - 838. BibTeX |
| 12. | V. Palankovski, G. Röhrer, E. Wachmann, J. Kraft, B. Löffler, J. Cervenka, R. Quay, T. Grasser, S. Selberherr: "Optimization of High-Speed SiGe HBTs"; Talk: International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO), Wien; 2001-11-15 - 2001-11-16; in "Proceedings Intl. Symposium on Electron Devices for Microwave and Optoelectronic Applications", (2001), ISBN: 0-7803-7049-x, 187 - 191 doi:10.1109/EDMO.2001.974305. BibTeX |
| 11. | R. Quay, R. Schultheis, W. Kellner, V. Palankovski, S. Selberherr: "A Review of Modeling Issues for RF Heterostructure Device Simulation"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 2001-09-05 - 2001-09-07; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6, 432 - 435 doi:10.1007/978-3-7091-6244-6_100. BibTeX |
| 10. | R. Quay, V. Palankovski, M. Chertouk, A. Leuther, S. Selberherr: "Simulation of InAlAs/InGaAs High Electron Mobility Transistors with a Single Set of Physical Parameters"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 2000-12-10 - 2000-12-13; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2000), ISBN: 0-7803-6438-4, 186 - 189 doi:10.1109/IEDM.2000.904289. BibTeX |
| 9. | V. Palankovski, R. Quay, S. Selberherr: "Industrial Application of Heterostructure Device Simulation"; Talk: Gallium Arsenide Integrated Circuits Symposium (GaAs IC), Seattle; (invited) 2000-11-05 - 2000-11-08; in "Proceedings of the Gallium Arsenide Integrated Circuit Symposium (GaAs IC)", (2000), ISBN: 0-7803-5968-2, 117 - 120 doi:10.1109/GAAS.2000.906305. BibTeX |
| 8. | T. Grasser, R. Quay, V. Palankovski, S. Selberherr: "A Global Self-Heating Model for Device Simulation"; Talk: European Solid-State Device Research Conference (ESSDERC), Cork; 2000-09-11 - 2000-09-13; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2000), ISBN: 2-86332-248-6, 324 - 327 doi:10.1109/ESSDERC.2000.194780. BibTeX |
| 7. | V. Palankovski, S. Selberherr, R. Quay, R. Schultheis: "Analysis of HBT Behavior After Strong Electrothermal Stress"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Seattle, WA, USA; 2000-09-06 - 2000-09-08; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2000), ISBN: 0-7803-6279-9, 245 - 248 doi:10.1109/SISPAD.2000.871254. BibTeX |
| 6. | R. Quay, H. Massler, W. Kellner, T. Grasser, V. Palankovski, S. Selberherr: "Simulation of Gallium-Arsenide Based High Electron Mobility Transistors"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Seattle, WA, USA; 2000-09-06 - 2000-09-08; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2000), ISBN: 0-7803-6279-9, 74 - 77 doi:10.1109/SISPAD.2000.871210. BibTeX |
| 5. | V. Palankovski, R. Quay, S. Selberherr, R. Schultheis: "S-Parameter Simulation of HBTs on Gallium-Arsenide"; Talk: International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO), London; 1999-11-22 - 1999-11-23; in "Proceedings High Performance Electron Devices for Microwave and Optoelectronic Applications EDMO", (1999), ISBN: 0-7803-5298-x, 15 - 19 doi:10.1109/EDMO.1999.821087. BibTeX |
| 4. | R. Quay, R. Reuter, T. Grasser, S. Selberherr: "Thermal Simulations of III/V HEMTs"; Talk: International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO), London; 1999-11-22 - 1999-11-23; in "Proceedings High Performance Electron Devices for Microwave and Optoelectronic Applications", (1999), ISBN: 0-7803-5298-x, 87 - 92. BibTeX |
| 3. | R. Quay, V. Palankovski, R. Reuter, M. Schlechtweg, W. Kellner, S. Selberherr: "III/V Device Optimization by Physics Based S-Parameter Simulation"; Talk: International Symposium on Compound Semiconductors (ISCS), Berlin; 1999-08-22 - 1999-08-26; in "Proceedings Intl. Symposium on Compound Semiconductors", (1999), ISBN: 0-7503-0704-8, 325 - 328. BibTeX |
| 2. | R. Quay, C. Moglestue, V. Palankovski, S. Selberherr: "A Temperature Dependent Model for the Saturation Velocity in Semiconductor Materials"; Talk: Materials Research Society Spring Meeting (MRS), Strasbourg; 1999-06-01 - 1999-06-04; in "Abstracts E-MRS Spring Meeting", (1999), L-7. BibTeX |
| 1. | R. Quay, R. Reuter, V. Palankovski, S. Selberherr: "S-Parameter Simulation of RF-HEMTs"; Talk: International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO), Manchester; 1998-11-24 in "Proceedings High Performance Electron Devices for Microwave and Optoelectronic Applications EDMO 98", (1998), ISBN: 0-7803-4333-6, 13 - 18. BibTeX |
| 1. | R. Quay: "Gallium Nitride Electronics"; TU Wien, Fakultät für Elektrotechnik und Informationstechnik, (2007), . BibTeX |
| 2. | S. Vitanov: "Simulation of High Electron Mobility Transistors"; Reviewer: S. Selberherr, R. Quay; Institut für Mikroelektronik, 2010, oral examination: 2010-12-20 doi:10.34726/hss.2010.21514. BibTeX |
| 1. | R. Quay: "Analysis and Simulation of High Electron Mobility Transistors"; Reviewer: S. Selberherr, E. Gornik; Institut für Mikroelektronik, 2001, oral examination: 2001-09-18 doi:10.34726/hss.2001.03341873. BibTeX |