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Publications Rüdiger Quay

38 records

Books and Editorships

2.   Quay, R. (Eds.). (2008).
Gallium Nitride Electronics.
Springer-Verlag, Berlin-Heidelberg. https://doi.org/10.1007/978-3-540-71892-5 (reposiTUm)

1.  V. Palankovski, R. Quay:
"Analysis and Simulation of Heterostructure Devices";
in series "Computational Microelectronics", series editor: S. Selberherr; Springer-Verlag, Wien - New York, 2004, ISBN: 978-3-7091-7193-6, 309 pages. https://doi.org/10.1007/978-3-7091-0560-3

Publications in Scientific Journals

6.   Vitanov, S., Palankovski, V., Maroldt, S., Quay, R., Murad, S., Rödle, T., Selberherr, S. (2012).
Physics-Based Modeling of GaN HEMTs.
IEEE Transactions on Electron Devices, 59(3), 685–693. https://doi.org/10.1109/ted.2011.2179118 (reposiTUm)

5.   Maroldt, S., Wiegner, D., Vitanov, S., Palankovski, V., Quay, R., Ambacher, O. (2010).
Efficient AlGaN/GaN Linear and Digital-Switch-Mode Power Amplifiers for Operation at 2 GHz.
IEICE Transactions on Electronics, E93-C(8), 1238–1244. (reposiTUm)

4.   Vitanov, S., Palankovski, V., Maroldt, S., Quay, R. (2010).
High-Temperature Modeling of AlGaN/GaN HEMTs.
Solid-State Electronics, 54(10), 1105–1112. https://doi.org/10.1016/j.sse.2010.05.026 (reposiTUm)

3.  V. Palankovski, R. Quay, S. Selberherr:
"Industrial Application of Heterostructure Device Simulation";
IEEE Journal of Solid-State Circuits (invited), 36 (2001), 9; 1365 - 1370. https://doi.org/10.1109/4.944664

2.  R. Quay, K. Hess, R. Reuter, M. Schlechtweg, T. Grave, V. Palankovski, S. Selberherr:
"Nonlinear Electronic Transport and Device Performance of HEMTs";
IEEE Transactions on Electron Devices, 48 (2001), 2; 210 - 217. https://doi.org/10.1109/16.902718

1.  R. Quay, C. Moglestue, V. Palankovski, S. Selberherr:
"A Temperature Dependent Model for the Saturation Velocity in Semiconductor Materials";
Materials Science in Semiconductor Processing, 3 (2000), 1-2; 149 - 155. https://doi.org/10.1016/S1369-8001(00)00015-9

Talks and Poster Presentations (with Proceedings-Entry)

27.   Vitanov, S., Palankovski, V., Maroldt, S., Quay, R. (2010).
Non-Linearity of Transconductance and Source-Gate Resistance of HEMTs.
In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (p. 4), Montreux, Austria. (reposiTUm)

26.   Vitanov, S., Palankovski, V., Maroldt, S., Quay, R. (2009).
A Simulation Study of Enhancement-Mode AlGaN/GaN HEMTs With Recessed Gates.
In HETECH 2009 Book of Abstracts (pp. 109–110), Smolenice Castle, Slovakia, Austria. (reposiTUm)

25.   Vitanov, S., Palankovski, V., Maroldt, S., Quay, R. (2009).
High-Temperature Modeling of AlGaN/GaN HEMTs.
In 2009 International Semiconductor Device Research Symposium, College Park, MD, USA. https://doi.org/10.1109/isdrs.2009.5378300 (reposiTUm)

24.   Vitanov, S., Palankovski, V., Pozzovivo, G., Kuzmik, J., Quay, R. (2008).
Systematical Study of InAlN/GaN Devices by Numerical Simulation.
In HETECH 2008 Book of Abstracts (pp. 159–160), Smolenice Castle, Slovakia, Austria. (reposiTUm)

23.   Vitanov, S., Palankovski, V., Murad, S., Rödle, T., Quay, R., Selberherr, S. (2007).
Hydrodynamic Modeling of AlGaN/GaN HEMTs.
In Simulation of Semiconductor Processes and Devices 2007 (pp. 273–276), Vienna, Austria. https://doi.org/10.1007/978-3-211-72861-1_65 (reposiTUm)

22.   Vitanov, S., Palankovski, V., Quay, R., Langer, E. (2007).
Modeling of Electron Transport in GaN-Based Materials and Devices.
In AIP Conference Proceedings, Vol. 893 (pp. 1399–1400). (reposiTUm)

21.   Vitanov, S., Palankovski, V., Quay, R., Langer, E. (2007).
Modeling of Electron Transport in GaN-based Materials and Devices.
In 28th International Conference on the Physics of Semiconductors (p. 244), Vienna, Austria, Austria. (reposiTUm)

20.   Vitanov, S., Palankovski, V., Murad, S., Rödle, T., Quay, R., Selberherr, S. (2007).
Predictive Simulation of AlGaN/GaN HEMTs.
In 2007 IEEE Compound Semiconductor Integrated Circuits Symposium, San Antonio. https://doi.org/10.1109/csics07.2007.31 (reposiTUm)

19.   Palankovski, V., Vitanov, S., Quay, R. (2006).
Field-Plate Optimization of AlGaN/GaN HEMTs.
In 2006 IEEE Compound Semiconductor Integrated Circuit Symposium, San Antonio. https://doi.org/10.1109/csics.2006.319926 (reposiTUm)

18.   Schuberth, C., Arthaber, H., Mayer, M., Magerl, G., Quay, R., Van Raay, F. (2006).
Load Pull Characterization of GaN/AlGaN HEMTs.
In 2006 INMMIC Proceedings (p. 3), Aveiro, Portugal. (reposiTUm)

17.   O´Droma, M., Goacher, A., Aschbacher, E., Bertran, E., Colantonio, P., Donati Guerrieri, S., Filicori, F., Gadringer, M., Luger, J., Meazza, A., Olavsbraten, M., Portilla, J., Quay, R., Zhu, A., Aamo, K., Berenguer, J., Camarchia, V., Carpenzano, N., Casas, F., Cesare, A., Collantes, J., Devlin, C., Ghione, G., Gilabert, P., Jugo, J., Lei, Y., Mathiesen, T., Mgebrishvili, N., Montoro, G., Parra, T., Pirola, M., Rossi, M., Santiago, J., Brazil, T., Magerl, G. (2006).
RF Power Amplifier Linearisation - An Overview.
In Target Days 2006, Book of Proceedings (pp. 9–12), Frascati. (reposiTUm)

16.   Vitanov, S., Palankovski, V., Quay, R., Langer, E. (2006).
Two-Dimensional Numerical Simulation of AlGaN/GaN HEMTs.
In TARGET Days 2006 Book of Proceedings (pp. 81–84), Frascati. (reposiTUm)

15.   Quay, R., Würfl, J., Wiegner, D., Fischer, G., Schuberth, C., Magerl, G. (2005).
GaN/AlGaN HEMTs for Highly Linear Communication Applications in L-Frequency Band.
In GigaHertz 2005 (p. 4), Uppsala, Sweden. (reposiTUm)

14.  M. O´Droma, J. Portilla, E. Bertran, S. Donati, T. Brazil, M. Rupp, R. Quay:
"Linearisation Issues in Microwave Amplifiers";
Talk: GAAS, Amsterdam; 2004-10-11 - 2004-10-12; in: "Proceedings of the European Microwave Week, 12th GAAS International Symposium", (2004), 199 - 202.

13.  S. Wagner, V. Palankovski, R. Quay, T. Grasser, S. Selberherr:
"Numerical Simulation of High-Speed High-Breakdown Indium Phosphide HBTs";
Talk: International Workshop on the Physics of Semiconductor Devices (IWPSD), Madras; 2003-12-16 - 2003-12-20; in: "Proceedings of the Twelfth International Workshop on the Physics of Semiconductor Devices", (2003), ISBN: 81-7319-567-6; 836 - 838.

12.  R. Quay, R. Schultheis, W. Kellner, V. Palankovski, S. Selberherr:
"A Review of Modeling Issues for RF Heterostructure Device Simulation";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; 432 - 435. https://doi.org/10.1007/978-3-7091-6244-6_100

11.  V. Palankovski, G. Röhrer, E. Wachmann, J. Kraft, B. Löffler, J. Cervenka, R. Quay, T. Grasser, S. Selberherr:
"Optimization of High-Speed SiGe HBTs";
Talk: International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO), Wien; 2001-11-15 - 2001-11-16; in: "Proceedings Intl. Symposium on Electron Devices for Microwave and Optoelectronic Applications", (2001), ISBN: 0-7803-7049-x; 187 - 191. https://doi.org/10.1109/EDMO.2001.974305

10.  T. Grasser, R. Quay, V. Palankovski, S. Selberherr:
"A Global Self-Heating Model for Device Simulation";
Talk: European Solid-State Device Research Conference (ESSDERC), Cork; 2000-09-11 - 2000-09-13; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2000), ISBN: 2-86332-248-6; 324 - 327. https://doi.org/10.1109/ESSDERC.2000.194780

9.  V. Palankovski, S. Selberherr, R. Quay, R. Schultheis:
"Analysis of HBT Behavior After Strong Electrothermal Stress";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Seattle, WA, USA; 2000-09-06 - 2000-09-08; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2000), ISBN: 0-7803-6279-9; 245 - 248. https://doi.org/10.1109/SISPAD.2000.871254

8.  V. Palankovski, R. Quay, S. Selberherr:
"Industrial Application of Heterostructure Device Simulation";
Talk: Gallium Arsenide Integrated Circuits Symposium (GaAs IC), Seattle (invited); 2000-11-05 - 2000-11-08; in: "Proceedings of the Gallium Arsenide Integrated Circuit Symposium (GaAs IC)", (2000), ISBN: 0-7803-5968-2; 117 - 120. https://doi.org/10.1109/GAAS.2000.906305

7.  R. Quay, H. Massler, W. Kellner, T. Grasser, V. Palankovski, S. Selberherr:
"Simulation of Gallium-Arsenide Based High Electron Mobility Transistors";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Seattle, WA, USA; 2000-09-06 - 2000-09-08; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2000), ISBN: 0-7803-6279-9; 74 - 77. https://doi.org/10.1109/SISPAD.2000.871210

6.  R. Quay, V. Palankovski, M. Chertouk, A. Leuther, S. Selberherr:
"Simulation of InAlAs/InGaAs High Electron Mobility Transistors with a Single Set of Physical Parameters";
Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 2000-12-10 - 2000-12-13; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2000), ISBN: 0-7803-6438-4; 186 - 189. https://doi.org/10.1109/IEDM.2000.904289

5.  R. Quay, C. Moglestue, V. Palankovski, S. Selberherr:
"A Temperature Dependent Model for the Saturation Velocity in Semiconductor Materials";
Talk: Materials Research Society Spring Meeting (MRS), Strasbourg; 1999-06-01 - 1999-06-04; in: "Abstracts E-MRS Spring Meeting", (1999), L-7.

4.  R. Quay, V. Palankovski, R. Reuter, M. Schlechtweg, W. Kellner, S. Selberherr:
"III/V Device Optimization by Physics Based S-Parameter Simulation";
Talk: International Symposium on Compound Semiconductors (ISCS), Berlin; 1999-08-22 - 1999-08-26; in: "Proceedings Intl. Symposium on Compound Semiconductors", (1999), ISBN: 0-7503-0704-8; 325 - 328.

3.  V. Palankovski, R. Quay, S. Selberherr, R. Schultheis:
"S-Parameter Simulation of HBTs on Gallium-Arsenide";
Talk: International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO), London; 1999-11-22 - 1999-11-23; in: "Proceedings High Performance Electron Devices for Microwave and Optoelectronic Applications EDMO", (1999), ISBN: 0-7803-5298-x; 15 - 19. https://doi.org/10.1109/EDMO.1999.821087

2.  R. Quay, R. Reuter, T. Grasser, S. Selberherr:
"Thermal Simulations of III/V HEMTs";
Talk: International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO), London; 1999-11-22 - 1999-11-23; in: "Proceedings High Performance Electron Devices for Microwave and Optoelectronic Applications", (1999), ISBN: 0-7803-5298-x; 87 - 92.

1.  R. Quay, R. Reuter, V. Palankovski, S. Selberherr:
"S-Parameter Simulation of RF-HEMTs";
Talk: International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO), Manchester; 1998-11-24; in: "Proceedings High Performance Electron Devices for Microwave and Optoelectronic Applications EDMO 98", (1998), ISBN: 0-7803-4333-6; 13 - 18.

Habilitation Theses

1.   Quay, R. (2009).
Gallium Nitride Electronics
 Technische Universität Wien. (reposiTUm)

Doctor's Theses (authored and supervised)