Skip to main navigation Skip to main content

Publications Francio Rodrigues

15 records

Publications in Scientific Journals

8.   Reiter, T., Aguinsky, L. F., Souza Berti Rodrigues, F., Weinbub, J., Hössinger, A., Filipovic, L. (2024).
Modeling the Impact of Incomplete Conformality During Atomic Layer Processing.
Solid-State Electronics, 211, Article 108816. https://doi.org/10.1016/j.sse.2023.108816 (reposiTUm)

7.   Souza Berti Rodrigues, F., Aguinsky, L. F., Lenz, C., Hössinger, A., Weinbub, J. (2023).
3D Modeling of Feature-Scale Fluorocarbon Plasma Etching in Silica.
Journal of Computational Electronics, 22(5), 1558–1563. https://doi.org/10.1007/s10825-023-02068-y (reposiTUm)

6.   Lenz, C., Manstetten, P., Aguinsky, L. F., Rodrigues, F., Hössinger, A., Weinbub, J. (2023).
Automatic Grid Refinement for Thin Material Layer Etching in Process TCAD Simulations.
Solid-State Electronics, 200, Article 108534. https://doi.org/10.1016/j.sse.2022.108534 (reposiTUm)

5.   Aguinsky, L. F., Souza Berti Rodrigues, F., Reiter, T., Klemenschits, X., Filipovic, L., Hössinger, A., Weinbub, J. (2023).
Modeling Incomplete Conformality During Atomic Layer Deposition in High Aspect Ratio Structures.
Solid-State Electronics, 201, Article 108584. https://doi.org/10.1016/j.sse.2022.108584 (reposiTUm)

4.   Lenz, C., Toifl, A., Quell, M., Rodrigues, F., Hössinger, A., Weinbub, J. (2022).
Curvature Based Feature Detection for Hierarchical Grid Refinement in TCAD Topography Simulations.
Solid-State Electronics, 191(108258), 108258. https://doi.org/10.1016/j.sse.2022.108258 (reposiTUm)

3.   Aguinsky, L. F., Rodrigues, F., Wachter, G., Trupke, M., Schmid, U., Hössinger, A., Weinbub, J. (2022).
Phenomenological Modeling of Low-Bias Sulfur Hexafluoride Plasma Etching of Silicon.
Solid-State Electronics, 191(108262), 108262. https://doi.org/10.1016/j.sse.2022.108262 (reposiTUm)

2.   Toifl, A., Rodrigues, F., Aguinsky, L. F., Hössinger, A., Weinbub, J. (2021).
Continuum Level-Set Model for Anisotropic Wet Etching of Patterned Sapphire Substrates.
Semiconductor Science and Technology, 36(4), 045016. https://doi.org/10.1088/1361-6641/abe49b (reposiTUm)

1.   Aguinsky, L. F., Wachter, G., Manstetten, P., Rodrigues, F., Trupke, M., Schmid, U., Hössinger, A., Weinbub, J. (2021).
Modeling and Analysis of Sulfur Hexafluoride Plasma Etching for Silicon Microcavity Resonators.
Journal of Micromechanics and Microengineering, 31(12), 125003. https://doi.org/10.1088/1361-6439/ac2bad (reposiTUm)

Contributions to Books

1.  L.F. Aguinsky, G. Wachter, F. Rodrigues, A. Scharinger, A. Toifl, M. Trupke, U. Schmid, A. Hössinger, J. Weinbub:
"Feature-Scale Modeling of Low-Bias SF6 Plasma Etching of Si";
in: "Proceedings of the 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", B. Cretu (ed.); IEEE, 2021, 1 - 4. https://doi.org/10.1109/EuroSOI-ULIS53016.2021.9560685

Talks and Poster Presentations (with Proceedings-Entry)

6.   Aguinsky, L., Toifl, A., Souza Berti Rodrigues, F., Hössinger, A., Weinbub, J. (2023).
A Modern Formulation of Knudsen Diffusion With Applications to Nanofabrication.
In 2023 IEEE 23rd International Conference on Nanotechnology (NANO) (pp. 270–275), Jeju City, Korea, Democratic People's Republic of. https://doi.org/10.1109/NANO58406.2023.10231251 (reposiTUm)

5.   Rodrigues, F., Aguinsky, L., Hössinger, A., Weinbub, J. (2022).
3D Feature-Scale Modeling of Highly Selective Fluorocarbon Plasma Etching.
In SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet (pp. 32–33), Granada, Spain. (reposiTUm)

4.   Aguinsky, L., Rodrigues, F., Klemenschits, X., Filipovic, L., Hössinger, A., Weinbub, J. (2022).
Modeling Non-Ideal Conformality During Atomic Layer Deposition in High Aspect Ratio Structures.
In Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022) (pp. 40–41), Granada, Spain. (reposiTUm)

3.   Rodrigues, F., Aguinsky, L., Toifl, A., Hössinger, A., Weinbub, J. (2021).
Feature Scale Modeling of Fluorocarbon Plasma Etching for via Structures Including Faceting Phenomena.
In Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN 2021) (pp. 101–102). (reposiTUm)

2.   Aguinsky, L., Wachter, G., Scharinger, A., Rodrigues, F., Toifl, A., Trupke, M., Schmid, U., Hössinger, A., Weinbub, J. (2021).
Feature-Scale Modeling of Low-Bias SF₆ Plasma Etching of Si.
In 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS) (pp. 1–4), Caen, France. https://doi.org/10.1109/eurosoi-ulis53016.2021.9560685 (reposiTUm)

1.   Rodrigues, F., Aguinsky, L., Toifl, A., Scharinger, A., Hössinger, A., Weinbub, J. (2021).
Surface Reaction and Topography Modeling of Fluorocarbon Plasma Etching.
In 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Dallas, TX, United States. https://doi.org/10.1109/sispad54002.2021.9592583 (reposiTUm)