Publications Francio Rodrigues
11 records
| 5. | L.F. Aguinsky, F. Rodrigues, G. Wachter, M. Trupke, U. Schmid, A. Hössinger, J. Weinbub: "Phenomenological Modeling of Low-Bias Sulfur Hexafluoride Plasma Etching of Silicon"; Solid-State Electronics, 191, (invited) (2022), 108262-1 - 108262-8 doi:10.1016/j.sse.2022.108262. BibTeX |
| 4. | C. Lenz, P. Manstetten, L.F. Aguinsky, F. Rodrigues, A. Hössinger, J. Weinbub: "Automatic Grid Refinement for Thin Material Layer Etching in Process TCAD Simulations"; Solid-State Electronics, 200, (invited) (2022), doi:10.1016/j.sse.2022.108534. BibTeX |
| 3. | C. Lenz, A. Toifl, M. Quell, F. Rodrigues, A. Hössinger, J. Weinbub: "Curvature Based Feature Detection for Hierarchical Grid Refinement in TCAD Topography Simulations"; Solid-State Electronics, 191, (invited) (2022), 108258-1 - 108258-8 doi:10.1016/j.sse.2022.108258. BibTeX |
| 2. | L.F. Aguinsky, G. Wachter, P. Manstetten, F. Rodrigues, M. Trupke, U. Schmid, A. Hössinger, J. Weinbub: "Modeling and Analysis of Sulfur Hexafluoride Plasma Etching for Silicon Microcavity Resonators"; Journal of Micromechanics and Microengineering, 31, (2021), 125003-1 - 125003-9 doi:10.1088/1361-6439/ac2bad. BibTeX |
| 1. | A. Toifl, F. Rodrigues, L.F. Aguinsky, A. Hössinger, J. Weinbub: "Continuum Level-Set Model for Anisotropic Wet Etching of Patterned Sapphire Substrates"; Semiconductor Science and Technology, 36, (2021), 045016-1 - 045016-12 doi:10.1088/1361-6641/abe49b. BibTeX |
| 1. | L.F. Aguinsky, G. Wachter, F. Rodrigues, A. Scharinger, A. Toifl, M. Trupke, U. Schmid, A. Hössinger, J. Weinbub: "Feature-Scale Modeling of Low-Bias SF6 Plasma Etching of Si"; in "Proceedings of the 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", B. Cretu (ed); IEEE, 2021, 1 - 4 doi:10.1109/EuroSOI-ULIS53016.2021.9560685. BibTeX |
| 5. | L.F. Aguinsky, F. Rodrigues, X. Klemenschits, L. Filipovic, A. Hössinger, J. Weinbub: "Modeling Non-Ideal Conformality during Atomic Layer Deposition in High Aspect Ratio Structures"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022), Granada, Spain; 2022-09-06 - 2022-09-08; in "SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet", (2022), 40 - 41. BibTeX |
| 4. | F. Rodrigues, L.F. Aguinsky, A. Hössinger, J. Weinbub: "3D Feature-Scale Modeling of Highly Selective Fluorocarbon Plasma Etching"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022), Granada, Spain; 2022-09-06 - 2022-09-08; in "SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet", (2022), 32 - 33. BibTeX |
| 3. | F. Rodrigues, L.F. Aguinsky, A. Toifl, A. Scharinger, A. Hössinger, J. Weinbub: "Surface Reaction and Topography Modeling of Fluorocarbon Plasma Etching"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Dallas, Texas (USA); 2021-09-27 - 2021-09-29; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2021), 229 - 232 doi:10.1109/SISPAD54002.2021.9592583. BibTeX |
| 2. | L.F. Aguinsky, G. Wachter, A. Scharinger, F. Rodrigues, A. Toifl, M. Trupke, U. Schmid, A. Hössinger, J. Weinbub: "Feature-Scale Modeling of Isotropic SF6 Plasma Etching of Si"; Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France; 2021-09-01 - 2021-09-03; in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2021), 54 - 55. BibTeX |
| 1. | F. Rodrigues, L.F. Aguinsky, A. Toifl, A. Hössinger, J. Weinbub: "Feature Scale Modeling of Fluorocarbon Plasma Etching for Via Structures including Faceting Phenomena"; Talk: International Workshop on Computational Nanotechnology (IWCN), Daejeon, Korea (Virtual); 2021-05-24 - 2021-06-06; in "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2021), ISBN: 978-89-89453-30-7, 101 - 102. BibTeX |