Publications Gerhard Rzepa
64 records
| 19. | M. Waltl, D. Waldhör, K. Tselios, B. Stampfer, C. Schleich, G. Rzepa, H. Enichlmair, E. Ioannidis, R. Minixhofer, T. Grasser: "Impact of Single-Defects on the Variability of CMOS Inverter Circuits"; Microelectronics Reliability, 126, (2021), 114275-1 - 114275-6 doi:10.1016/j.microrel.2021.114275. BibTeX |
| 18. | M. Jech, G.A. Rott, H. Reisinger, S. Tyaginov, G. Rzepa, A. Grill, D. Jabs, C. Jungemann, M. Waltl, T. Grasser: "Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full {VG, VD} Bias Space: Implications and Peculiarities"; IEEE Transactions on Electron Devices, 67, (2020), 3315 - 3322 doi:10.1109/TED.2020.3000749. BibTeX |
| 17. | M. Waltl, B. Stampfer, G. Rzepa, B. Kaczer, T. Grasser: "Separation of Electron and Hole Trapping Components of PBTI in SiON nMOS Transistors"; Microelectronics Reliability, 114, (2020), 113746-1 - 113746-5 doi:10.1016/j.microrel.2020.113746. BibTeX |
| 16. | J. Franco, Z. Wu, G. Rzepa, L. Ragnarsson, H. Dekkers, A. Vandooren, G Groeseneken, N. Horiguchi, N. Collaert, D. Linten, T. Grasser, B. Kaczer: "On the Impact of the Gate Work-Function Metal on the Charge Trapping Component of NBTI and PBTI"; IEEE Transactions on Device and Materials Reliability, 19, (2019), 268 - 274 doi:10.1109/TDMR.2019.2913258. BibTeX |
| 15. | K. Giering, K. Puschkarsky, H. Reisinger, G. Rzepa, G.A. Rott, R. Vollertsen, T. Grasser, R. Jancke: "NBTI Degradation and Recovery in Analog Circuits: Accurate and Efficient Circuit-Level Modeling"; IEEE Transactions on Electron Devices, 66, (2019), 1662 - 1668 doi:10.1109/TED.2019.2901907. BibTeX |
| 14. | M. Jech, B. Ullmann, G. Rzepa, S. E. Tyaginov, A. Grill, M. Waltl, D. Jabs, C. Jungemann, T. Grasser: "Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part II: Theory"; IEEE Transactions on Electron Devices, 66, (2019), 241 - 248 doi:10.1109/TED.2018.2873421. BibTeX |
| 13. | Z. Wu, J. Franco, A. Vandooren, B. Kaczer, Ph. Roussel, G. Rzepa, T. Grasser: "Improved PBTI Reliability in Junction-Less FET Fabricated at Low Thermal Budget for 3-D Sequential Integration"; IEEE Transactions on Device and Materials Reliability, 9, (2019), 262 - 267 doi:10.1109/TDMR.2019.2906843. BibTeX |
| 12. | W. Gös, Y. Wimmer, A.-M. El-Sayed, G. Rzepa, M. Jech, A. Shluger, T. Grasser: "Identification of Oxide Defects in Semiconductor Devices: A Systematic Approach Linking DFT to Rate Equations and Experimental Evidence"; Microelectronics Reliability, 87, (2018), 286 - 320 doi:10.1016/j.microrel.2017.12.021. BibTeX |
| 11. | B. Kaczer, J. Franco, P. Weckx, Ph. J. Roussel, V. Putcha, E. Bury, M. Simicic, A. Chasin, D. Linten, B. Parvais, F. Catthoor, G. Rzepa, M. Waltl, T. Grasser: "A Brief Overview of Gate Oxide Defect Properties and Their Relation to MOSFET Instabilities and Device and Circuit Time-Dependent Variability"; Microelectronics Reliability, 81, (invited) (2018), 186 - 194 doi:10.1016/j.microrel.2017.11.022. BibTeX |
| 10. | T. Knobloch, G. Rzepa, Yu. Illarionov, M. Waltl, F. Schanovski, B. Stampfer, M. M. Furchi, T. Müller, T. Grasser: "A Physical Model for the Hysteresis in MoS2 Transistors"; IEEE Journal of the Electron Devices Society, 6, (2018), 972 - 978 doi:10.1109/JEDS.2018.2829933. BibTeX |
| 9. | G. Rzepa, J. Franco, B.J. O´Sullivan, A. Subirats, M. Simicic, G. Hellings, P. Weckx, M. Jech, T. Knobloch, M. Waltl, P. Roussel, D. Linten, B. Kaczer, T. Grasser: "Comphy -- A Compact-Physics Framework for Unified Modeling of BTI"; Microelectronics Reliability, 85, (invited) (2018), 49 - 65 doi:10.1016/j.microrel.2018.04.002. BibTeX |
| 8. | Yu. Illarionov, T. Knobloch, M. Waltl, G. Rzepa, A. Pospischil, D.K Polyushkin, M. M. Furchi, T. Müller, T. Grasser: "Energetic Mapping of Oxide Traps in MoS2 Field-Effect Transistors"; 2D Materials, 4, (2017), 025108-1 - 025108-10 doi:10.1088/2053-1583/aa734a. BibTeX |
| 7. | Yu. Illarionov, M. Waltl, G. Rzepa, T. Knobloch, J. Kim, D. Akinwande, T. Grasser: "Highly-Stable Black Phosphorus Field-Effect Transistors with Low Density of Oxide Traps"; npj 2D Materials and Applications, 1, (2017), 23-1 - 23-7 doi:10.1038/s41699-017-0025-3. BibTeX |
| 6. | B. Kaczer, J. Franco, S. E. Tyaginov, M. Jech, G. Rzepa, T. Grasser, B.J. O´Sullivan, R. Ritzenhaler, T. Schram, A. Spessot, D. Linten, N. Horiguchi: "Mapping of CMOS FET Degradation in Bias Space--Application to Dram Peripheral Devices"; Journal of Vacuum Science & Technology B, 35, (2017), 01A109-1 - 01A109-6 doi:10.1116/1.4972872. BibTeX |
| 5. | M. Waltl, G. Rzepa, A. Grill, W. Gös, J. Franco, B. Kaczer, L. Witters, J. Mitard, N. Horiguchi, T. Grasser: "Superior NBTI in High-k SiGe Transistors - Part I: Experimental"; IEEE Transactions on Electron Devices, 64, (2017), 2092 - 2098 doi:10.1109/TED.2017.2686086. BibTeX |
| 4. | M. Waltl, G. Rzepa, A. Grill, W. Gös, J. Franco, B. Kaczer, L. Witters, J. Mitard, N. Horiguchi, T. Grasser: "Superior NBTI in High-k SiGe Transistors - Part II: Theory"; IEEE Transactions on Electron Devices, 64, (2017), 2099 - 2105 doi:10.1109/TED.2017.2686454. BibTeX |
| 3. | Yu. Illarionov, G. Rzepa, M. Waltl, T. Knobloch, A. Grill, M. M. Furchi, T. Müller, T. Grasser: "The Role of Charge Trapping in MoS2/SiO2 and MoS2/hBN Field-Effect Transistors"; 2D Materials, 3, (2016), 035004-1 - 035004-10 doi:10.1088/2053-1583/3/3/035004. BibTeX |
| 2. | Yu. Illarionov, M. Waltl, G. Rzepa, J. Kim, S. Kim, A. Dodabalapur, D. Akinwande, T. Grasser: "Long-Term Stability and Reliability of Black Phosphorus Field-Effect Transistors"; ACS Nano, 10, (2016), 9543 - 9549 doi:10.1021/acsnano.6b04814. BibTeX |
| 1. | B. Kaczer, J. Franco, P. Weckx, Ph. J. Roussel, M. Simicic, V. Putcha, E. Bury, M. Cho, R. Degraeve, D. Linten, G. Groeseneken, P. Debacker, B. Parvais, P. Raghavan, F. Catthoor, G. Rzepa, M. Waltl, W. Gös, T. Grasser: "The Defect-Centric Perspective of Device and Circuit Reliability - From Gate Oxide Defects to Circuits"; Solid-State Electronics, 125, (2016), 52 - 62 doi:10.1016/j.sse.2016.07.010. BibTeX |
| 1. | T. Knobloch, G. Rzepa, Yu. Illarionov, M. Waltl, D.K Polyushkin, A. Pospischil, M. M. Furchi, T. Müller, T. Grasser: "Impact of Gate Dielectrics on the Threshold Voltage in MoS2 Transistors"; in "Semiconductors, Dielectrics, and Metals for Nanoelectronics 15, Vol.80, No.1", issued by The Electrochemical Society; D. Misra, S. De Gendt, M. Houssa, K. Kita, D. Landheer (ed); ECS Transactions, (invited) 2017, ISBN: 978-1-62332-470-4, 203 - 217 doi:10.1149/08001.0203ecst. BibTeX |
| 39. | L. Filipovic, O. Baumgartner, J. Piso, J. Bobinac, T. Reiter, G. Strof, G. Rzepa, Z. Stanojevic, M. Karner: "DTCO Flow for Air Spacer Generation and its Impact on Power and Performance at N7"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022), Granada, Spain; 2022-09-06 - 2022-09-08; in "SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet", (2022), 34 - 35. BibTeX |
| 38. | A. Vasilev, M. Jech, A. Grill, G. Rzepa, C. Schleich, A. Makarov, G. Pobegen, T. Grasser, M. Waltl, S. E. Tyaginov: "Modeling the Hysteresis of Current-Voltage Characteristics in 4H-SiC Transistors"; Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA - virtual; 2020-10-04 - 2020-10-08; in "Proceedings of the International Integrated Reliability Workshop (IIRW)", (2020), 1 - 4 doi:10.1109/IIRW49815.2020.9312864. BibTeX |
| 37. | T. Grasser, B. Kaczer, B. O´Sullivan, G. Rzepa, B. Stampfer, M. Waltl: "The Mysterious Bipolar Bias Temperature Stress from the Perspective of Gate-Sided Hydrogen Release"; Talk: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 2020-04-28 - 2020-04-30; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), ISBN: 978-1-7281-3200-6, 1 - 6 doi:10.1109/IRPS45951.2020.9129198. BibTeX |
| 36. | J. Michl, A. Grill, D. Claes, G. Rzepa, B. Kaczer, D. Linten, I. Radu, T. Grasser, M. Waltl: "Quantum Mechanical Charge Trap Modeling to Explain BTI at Cryogenic Temperatures"; Talk: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 2020-04-28 - 2020-05-30; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), ISBN: 978-1-7281-3199-3, 1 - 6 doi:10.1109/IRPS45951.2020.9128349. BibTeX |
| 35. | C. Schleich, J. Berens, G. Rzepa, G. Pobegen, G. Rescher, S. E. Tyaginov, T. Grasser, M. Waltl: "Physical Modeling of Bias Temperature Instabilities in SiC MOSFETs"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, USA; 2019-12-07 - 2019-12-11; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2019), doi:10.1109/IEDM19573.2019.8993446. BibTeX |
| 34. | J. Scharlotta, G. Bersuker, S. E. Tyaginov, C. Young, G. Haase, G. Rzepa, M. Waltl, T. Chohan, S. Iyer, A. Kotov, C. Zambelli, F. Guarin, F. M. Puglisi, C. Ostermaier: "IIRW 2019 Discussion Group II: Reliability for Aerospace Applications"; Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2019-10-13 - 2019-10-17; in "Proceedings of the International Integrated Reliability Workshop (IIRW)", (2019), 1 - 4 doi:10.1109/IIRW47491.2019.8989910. BibTeX |
| 33. | B. O´Sullivan, R. Ritzenthaler, G. Rzepa, Z. Wu, E. D. Litta, O. Richard, T. Conard, V. Machkaoutsan, P. Fazan, C. Kim, J. Franco, B. Kaczer, T. Grasser, A. Spessot, D. Linten, N. Horiguchi: "Gate-Stack Engineered NBTI Improvements in Highvoltage Logic-For-Memory High-κ/Metal Gate Devices"; Talk: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2019-03-31 - 2019-04-04; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2019), ISBN: 978-1-5386-9504-3, 1 - 8 doi:10.1109/IRPS.2019.8720598. BibTeX |
| 32. | Z. Wu, J. Franco, D. Claes, G. Rzepa, P. Roussel, N. Collaert, G Groeseneken, D. Linten, T. Grasser, B. Kaczer: "Accelerated Capture and Emission (ACE) Measurement Pattern for Efficient BTI Characterization and Modeling"; Talk: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2019-03-31 - 2019-04-04; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2019), ISBN: 978-1-5386-9504-3, 1 - 7 doi:10.1109/IRPS.2019.8720541. BibTeX |
| 31. | J. Franco, Z. Wu, G. Rzepa, A. Vandooren, H. Arimura, D. Claes, N. Horiguchi, N. Collaert, D. Linten, T. Grasser, B. Kaczer: "Low Thermal Budget Dual-Dipole Gate Stacks Engineered for Sufficient BTI Reliability in Novel Integration Schemes"; Talk: IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Singapore; (invited) 2019-03-12 - 2019-03-15; in "Proceedings of the IEEE Electron Devices Technology and Manufacturing Conference (EDTM)", (2019), ISBN: 978-1-5386-6508-4, 215 - 217 doi:10.1109/EDTM.2019.8731237. BibTeX |
| 30. | J. Franco, Z. Wu, G. Rzepa, A. Vandooren, H. Arimura, L. Ragnarsson, G. Hellings, S. Brus, D. Cott, V. De Heyn, G. Groeseneken, N. Horiguchi, J. Ryckaert, N. Collaert, D. Linten, T. Grasser, B. Kaczer: "BTI Reliability Improvement Strategies in Low Thermal Budget Gate Stacks for 3D Sequential Integration"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, USA; 2018-12-01 - 2018-12-05; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2018), ISBN: 978-1-7281-1987-8, 34.2.1 - 34.2.4 doi:10.1109/IEDM.2018.8614559. BibTeX |
| 29. | J. Franco, Z. Wu, G. Rzepa, L. Ragnarsson, H. Dekkers, A. Vandooren, G. Groeseneken, N. Horiguchi, N. Collaert, D. Linten, T. Grasser, B. Kaczer: "On the Impact of the Gate Metal Work-Function on the Charge Trapping Component of BTI"; Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, USA; 2018-10-07 - 2018-10-11; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2018), ISBN: 978-1-5386-6039-3, 1 - 4 doi:10.1109/IIRW.2018.8727089. BibTeX |
| 28. | S. E. Tyaginov, M. Jech, G. Rzepa, A. Grill, A.-M. El-Sayed, G. Pobegen, A. Makarov, T. Grasser: "Border Trap Based Modeling of SiC Transistor Transfer Characteristics"; Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2018-10-07 - 2018-10-11; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2018), ISBN: 978-1-5386-6039-3, doi:10.1109/IIRW.2018.8727083. BibTeX |
| 27. | T. Grasser, B. Stampfer, M. Waltl, G. Rzepa, K. Rupp, F. Schanovsky, G. Pobegen, K. Puschkarsky, H. Reisinger, B. O´Sullivan, B. Kaczer: "Characterization and Physical Modeling of the Temporal Evolution of Near-Interfacial States Resulting from NBTI/PBTI Stress in nMOS/pMOS Transistors"; Talk: IEEE International Reliability Physics Symposium (IRPS), Burlingame, CA, USA; 2018-03-11 - 2018-03-15; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2018), 2A.2-1 - 2A.2-10. BibTeX |
| 26. | J. Franco, V. Putcha, A. Vais, S. Sioncke, N. Waldron, D. Zhou, G. Rzepa, P. Roussel, G. Groeseneken, M. Heyns, N. Collaert, D. Linten, T. Grasser, B. Kaczer: "Characterization of Oxide Defects in InGaAs MOS Gate Stacks for High-Mobility n-Channel MOSFETs"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; (invited) 2017-12-02 - 2017-12-06; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2017), 4 page(s) doi:10.1109/IEDM.2017.8268347. BibTeX |
| 25. | T. Knobloch, G. Rzepa, Yu. Illarionov, M. Waltl, D.K Polyushkin, A. Pospischil, M. M. Furchi, T. Müller, T. Grasser: "Impact of Gate Dielectrics on the Threshold Voltage in MoS2 Transistors"; Talk: Meeting of the Electrochemical Society (ECS), National Harbor, Maryland, USA; (invited) 2017-10-01 - 2017-10-05; in "Meeting Abstracts", (2017), MA2017-02(14): 837, 2 page(s) . BibTeX |
| 24. | T. Knobloch, G. Rzepa, Yu. Illarionov, M. Waltl, F. Schanovsky, M. Jech, B. Stampfer, M. M. Furchi, T. Müller, T. Grasser: "Physical Modeling of the Hysteresis in MoS2 Transistors"; Talk: European Solid-State Device Research Conference (ESSDERC), Leuven, Belgium; 2017-09-11 - 2017-09-14; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2017), 284 - 287 doi:10.1109/ESSDERC.2017.8066647. BibTeX |
| 23. | A. Chasin, J. Franco, B. Kaczer, V. Putcha, P. Weckx, R. Ritzenthaler, H. Mertens, N. Horiguchi, D. Linten, G. Rzepa: "BTI Reliability and Time-Dependent Variability of Stacked Gate-All-Around Si Nanowire Transistors"; Poster: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2017-04-02 - 2017-04-06; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6641-4, 5C-4.1 - 5C-4.7. BibTeX |
| 22. | T. Grasser, M. Waltl, K. Puschkarsky, B. Stampfer, G. Rzepa, G. Pobegen, H. Reisinger, H. Arimura, B. Kaczer: "Implications of Gate-Sided Hydrogen Release for Post-Stress Degradation Build-Up after BTI Stress"; Talk: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2017-04-02 - 2017-04-06; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6641-4, 6A-2.1 - 6A-2.6. BibTeX |
| 21. | B. Kaczer, G. Rzepa, J. Franco, P. Weckx, A. Chasin, V. Putcha, E. Bury, M. Simicic, Ph. J. Roussel, G. Hellings, A. Veloso, P. Matagne, T. Grasser, D. Linten: "Benchmarking Time-Dependent Variability of Junctionless Nanowire FETs"; Talk: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2017-04-02 - 2017-04-06; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6641-4, 2D-6.1 - 2D-6.7. BibTeX |
| 20. | G. Rzepa, J. Franco, A. Subirats, M. Jech, A. Chasin, A. Grill, M. Waltl, T. Knobloch, B. Stampfer, T. Chiarella, N. Horiguchi, L. Ragnarsson, D. Linten, B. Kaczer, T. Grasser: "Efficient Physical Defect Model Applied to PBTI in High-κ Stacks"; Poster: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2017-04-02 - 2017-04-06; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6641-4, XT-11.1 - XT-11.6. BibTeX |
| 19. | Yu. Illarionov, G. Rzepa, M. Waltl, T. Knobloch, J. Kim, D. Akinwande, T. Grasser: "Accurate Mapping of Oxide Traps in Highly-Stable Black Phosphorus FETs"; Talk: IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Toyama, Japan; 2017-02-28 - 2017-03-02; in "Proceedings of the IEEE Electron Devices Technology and Manufacturing Conference (EDTM)", (2017), ISBN: 978-1-5090-4661-4, 114 - 115 doi:10.1109/EDTM.2017.7947532. BibTeX |
| 18. | M. Karner, O. Baumgartner, Z. Stanojevic, F. Schanovsky, G. Strof, Ch. Kernstock, H. W. Karner, G. Rzepa, T. Grasser: "Vertically Stacked Nanowire MOSFETs for Sub-10nm Nodes: Advanced Topography, Device, Variability, and Reliability Simulations"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 2016-12-03 - 2016-12-07; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2016), ISBN: 978-1-5090-3902-9, 30.7.1 - 30.7.4 doi:10.1109/IEDM.2016.7838516. BibTeX |
| 17. | B. Kaczer, S. Amoroso, R. Hussin, A. Asenov, J. Franco, P. Weckx, Ph. J. Roussel, G. Rzepa, T. Grasser, N. Horiguchi: "On the distribution of the FET threshold voltage shifts due to individual charged gate oxide defects"; Talk: IEEE International Integrated Reliability Workshop (IIRW), Stanford Sierra Conference Center, S. Lake Tahoe, California, USA; 2016-10-09 - 2016-10-13; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2016), ISBN: 978-1-5090-4192-3, 3 page(s) . BibTeX |
| 16. | Yu. Illarionov, G. Rzepa, M. Waltl, H. Pandey, S. Kataria, V. Passi, M. Lemme, T. Grasser: "A Systematic Study of Charge Trapping in Single-Layer Double-Gated GFETs"; Talk: Device Research Conference, Newark, Delaware, USA; 2016-06-19 - 2016-06-22; in "74th Device Research Conference Digest", (2016), ISBN: 978-1-5090-2827-6, 89 - 90. BibTeX |
| 15. | G. Rzepa, M. Waltl, W. Gös, B. Kaczer, J. Franco, T. Chiarella, N. Horiguchi, T. Grasser: "Complete Extraction of Defect Bands Responsible for Instabilities in n and pFinFETs"; Talk: International Symposium on VLSI Technology, Honolulu, HI, USA; 2016-06-14 - 2016-06-16; in "2016 Symposium on VLSI Technology Digest of Technical Papers", (2016), ISBN: 978-1-5090-0638-0, 208 - 209. BibTeX |
| 14. | K. Giering, G.A. Rott, G. Rzepa, H. Reisinger, A. Puppala, T. Reich, W. Gustin, T. Grasser, R. Jancke: "Analog-circuit NBTI Degradation and Time-dependent NBTI Variability: An Efficient Physics-Based Compact Model"; Talk: International Reliability Physics Symposium (IRPS), Pasadena, CA, USA; 2016-04-17 - 2016-04-21; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2016), 4C-4-1 - 4C-4-6 doi:10.1109/IRPS.2016.7574540. BibTeX |
| 13. | T. Grasser, M. Waltl, G. Rzepa, W. Gös, Y. Wimmer, A.-M. El-Sayed, A. Shluger, H. Reisinger, B. Kaczer: "The "Permanent" Component of NBTI Revisited: Saturation, Degradation-Reversal, and Annealing"; Talk: International Reliability Physics Symposium (IRPS), Pasadena, CA, USA; 2016-04-17 - 2016-04-21; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2016), 5A-2-1 - 5A-2-8 doi:10.1109/IRPS.2016.7574504. BibTeX |
| 12. | M. Waltl, A. Grill, G. Rzepa, W. Gös, J. Franco, B. Kaczer, J. Mitard, T. Grasser: "Nanoscale Evidence for the Superior Reliability of SiGe High-k pMOSFETs"; Poster: International Reliability Physics Symposium (IRPS), Pasadena, CA, USA; 2016-04-17 - 2016-04-21; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2016), XT-02-1 - XT-02-6 doi:10.1109/IRPS.2016.7574644. BibTeX |
| 11. | T. Grasser, M. Waltl, Y. Wimmer, W. Gös, R. Kosik, G. Rzepa, H. Reisinger, G. Pobegen, A.-M. El-Sayed, A. Shluger, B. Kaczer: "Gate-Sided Hydrogen Release as the Origin of "Permanent" NBTI Degradation: From Single Defects to Lifetimes"; Talk: IEEE International Electron Devices Meeting (IEDM), Washington, DC, USA; 2015-12-07 - 2015-12-09; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2015), 535 - 538 doi:10.1109/IEDM.2015.7409739. BibTeX |
| 10. | A. Grill, G. Rzepa, P. Lagger, C. Ostermaier, H. Ceric, T. Grasser: "Charge Feedback Mechanisms at Forward Threshold Voltage Stress in GaN/AlGaN HEMTs"; Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2015-10-11 - 2015-10-15; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2015), ISBN: 978-1-4673-7395-1, 41 - 45 doi:10.1109/IIRW.2015.7437064. BibTeX |
| 9. | B. Kaczer, J. Franco, P. Weckx, P. Roussel, E. Bury, M. Cho, R. Degraeve, D. Linten, G. Groeseneken, H. Kukner, P. Raghavan, F. Catthoor, G. Rzepa, W. Gös, T. Grasser: "The Defect-Centric Perspective of Device and Circuit Reliability - From Individual Defects to Circuits"; Talk: European Solid-State Device Research Conference (ESSDERC), Graz, Austria; (invited) 2015-09-14 - 2015-09-18; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2015), ISBN: 978-1-4673-7860-4, 218 - 225 doi:10.1109/ESSDERC.2015.7324754. BibTeX |
| 8. | H. Demel, Z. Stanojevic, M. Karner, G. Rzepa, T. Grasser: "Expanding TCAD Simulations from Grid to Cloud"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 2015-09-09 - 2015-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7860-4, 186 - 189 doi:10.1109/SISPAD.2015.7292290. BibTeX |
| 7. | G. Rzepa, M. Waltl, W. Gös, B. Kaczer, T. Grasser: "Microscopic Oxide Defects Causing BTI, RTN, and SILC on High-K FinFETs"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 2015-09-09 - 2015-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7860-4, 144 - 147 doi:10.1109/SISPAD.2015.7292279. BibTeX |
| 6. | G. Rzepa, W. Gös, B. Kaczer, T. Grasser: "Characterization and Modeling of Reliability Issues in Nanoscale Devices"; Talk: IEEE International Symposium on Circuits and Systems (ISCAS), Lisbon, Portugal; (invited) 2015-05-24 - 2015-05-27; in "Proceedings of the IEEE International Symposium on Circuits and Systems (ISCAS) 2015", (2015), ISBN: 978-1-4799-8391-9, 2445 - 2448. BibTeX |
| 5. | T. Grasser, W. Gös, Y. Wimmer, F. Schanovsky, G. Rzepa, M. Waltl, K. Rott, H. Reisinger, V. Afanas´Ev, A. Stesmans, A. El-Sayed, A. Shluger: "On the Microscopic Structure of Hole Traps in pMOSFETs"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 2014-12-15 - 2014-12-17; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2014), ISBN: 978-1-4799-8001-7, 530 - 533 doi:10.1109/IEDM.2014.7047093. BibTeX |
| 4. | K. Giering, C. Sohrmann, G. Rzepa, L. Heiß, T. Grasser, R. Jancke: "NBTI Modeling in Analog Circuits and its Application to Long-Term Aging Simulations"; Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2014-10-12 - 2014-10-16; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2014), ISBN: 978-1-4799-7308-8, 29 - 34 doi:10.1109/IIRW.2014.7049501. BibTeX |
| 3. | W. Gös, M. Waltl, Y. Wimmer, G. Rzepa, T. Grasser: "Advanced Modeling of Charge Trapping: RTN, 1/f noise, SILC, and BTI"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; (invited) 2014-09-09 - 2014-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 77 - 80 doi:10.1109/SISPAD.2014.6931567. BibTeX |
| 2. | G. Rzepa, W. Gös, G.A. Rott, K. Rott, M. Karner, C. Kernstock, B. Kaczer, H. Reisinger, T. Grasser: "Physical Modeling of NBTI: From Individual Defects to Devices"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 2014-09-09 - 2014-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 81 - 84 doi:10.1109/SISPAD.2014.6931568. BibTeX |
| 1. | T. Grasser, G. Rzepa, M. Waltl, W. Gös, K. Rott, G.A. Rott, H. Reisinger, J. Franco, B. Kaczer: "Characterization and Modeling of Charge Trapping: From Single Defects to Devices"; Talk: IEEE International Conference on IC Design and Technology (ICICDT), Austin, TX, USA; (invited) 2014-05-28 - 2014-05-30; in "Proceedings of IEEE International Conference on IC Design and Technology", (2014), ISBN: 978-1-4799-2153-9, 1 - 4 doi:10.1109/ICICDT.2014.6838620. BibTeX |
| 2. | L. Filipovic, M. Kampl, T. Knobloch, G. Rzepa, J. Weinbub: "Ihr Smartphone - Ein Supercomputer vor 20 Jahren. Ein Einblick in die Mikro- und Nanoelektronik (mit Virtual Reality)"; Talk: Lange Nacht der Forschung 2018, Wien; 2018-04-13. BibTeX |
| 1. | Yu. Illarionov, M. Waltl, T. Knobloch, G. Rzepa, T. Grasser: "Reliability Perspective of 2D Electronics"; Talk: International Conference on Physics of 2D Crystals (ICP2C2), Ha Long, Vietnam; 2017-04-25 - 2017-04-30; . BibTeX |
| 1. | G. Rzepa: "Efficient Physical Modeling of Bias Temperature Instability"; Reviewer: T. Grasser, L. Larcher, F. Crupi; Institut für Mikroelektronik, 2018, oral examination: 2018-06-27 doi:10.34726/hss.2018.57326. BibTeX |
| 2. | T. Knobloch: "Characterization and Physical Modeling of Degradation in MoS2 Transistors"; Supervisor: T. Grasser, G. Rzepa; Institut für Mikroelektronik, 2016, final examination: 2016-10-07. BibTeX |
| 1. | G. Rzepa: "Microscopic Modeling of NBTI in MOS Transistors"; Supervisor: T. Grasser, W. Gös; Institut für Mikroelektronik, 2013, final examination: 2013-11-20. BibTeX |