Publications Franz Schanovsky
46 records
| 7. | T. Grasser, K. Rott, H. Reisinger, M. Waltl, F. Schanovsky, B. Kaczer: "NBTI in Nanoscale MOSFETs-The Ultimate Modeling Benchmark"; IEEE Transactions on Electron Devices, 61, (2014), 3586 - 3593 doi:10.1109/TED.2014.2353578. BibTeX |
| 6. | F. Schanovsky, O. Baumgartner, V. Sverdlov, T. Grasser: "A Multi Scale Modeling Approach to Non-Radiative Multi Phonon Transitions at Oxide Defects in MOS Structures"; Journal of Computational Electronics, 11, (2012), 218 - 224 doi:10.1007/s10825-012-0403-1. BibTeX |
| 5. | W. Gös, F. Schanovsky, H. Reisinger, B. Kaczer, T. Grasser: "Bistable Defects as the Cause for NBTI and RTN"; Solid State Phenomena, 178-179, (invited) (2011), 473 - 482 doi:10.4028/www.scientific.net/SSP.178-179.473. BibTeX |
| 4. | T. Grasser, B. Kaczer, W. Gös, H. Reisinger, T. Aichinger, Ph. Hehenberger, P.-J. Wagner, F. Schanovsky, J. Franco, M. Toledano-Luque, M. Nelhiebel: "The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction-Diffusion to Switching Oxide Traps"; IEEE Transactions on Electron Devices, 58, (invited) (2011), 3652 - 3666. BibTeX |
| 3. | F. Schanovsky, W. Gös, T. Grasser: "Multiphonon Hole Trapping from First Principles"; Journal of Vacuum Science & Technology B, 29, (2011), 01A201-1 - 01A201-5 doi:10.1116/1.3533269. BibTeX |
| 2. | F. Schanovsky, W. Gös, T. Grasser: "An Advanced Description of Oxide Traps in MOS Transistors and its Relation to DFT"; Journal of Computational Electronics, 9, (invited) (2010), 135 - 140 doi:10.1007/s10825-010-0323-x. BibTeX |
| 1. | V. Sverdlov, T. Windbacher, F. Schanovsky, S. Selberherr: "Mobility Modeling in Advanced MOSFETs with Ultra-Thin Silicon Body under Stress"; Journal Integrated Circuits and Systems, 4, (2009), 55 - 60 doi:10.29292/jics.v4i2.298. BibTeX |
| 3. | W. Gös, F. Schanovsky, T. Grasser: "Advanced Modeling of Oxide Defects"; in "Bias Temperature Instability for Devices and Circuits", T. Grasser (ed); Springer New York, 2013, ISBN: 978-1-4614-7909-3, 409 - 446 doi:10.1007/978-1-4614-7909-3_16. BibTeX |
| 2. | F. Schanovsky, T. Grasser: "On the Microscopic Limit of the RD Model"; in "Bias Temperature Instability for Devices and Circuits", T. Grasser (ed); Springer New York, 2013, ISBN: 978-1-4614-7909-3, 379 - 408 doi:10.1007/978-1-4614-7909-3_15. BibTeX |
| 1. | W. Gös, F. Schanovsky, Ph. Hehenberger, P.-J. Wagner, T. Grasser: "Charge Trapping and the Negative Bias Temperature Instability"; in "Physics and Technology of High-k Materials 8", ECS Transactions, (invited) 2010, ISBN: 978-1-56677-822-0, 565 - 589 doi:10.1149/1.3481647. BibTeX |
| 31. | T. Grasser, B. Stampfer, M. Waltl, G. Rzepa, K. Rupp, F. Schanovsky, G. Pobegen, K. Puschkarsky, H. Reisinger, B. O´Sullivan, B. Kaczer: "Characterization and Physical Modeling of the Temporal Evolution of Near-Interfacial States Resulting from NBTI/PBTI Stress in nMOS/pMOS Transistors"; Talk: IEEE International Reliability Physics Symposium (IRPS), Burlingame, CA, USA; 2018-03-11 - 2018-03-15; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2018), 2A.2-1 - 2A.2-10. BibTeX |
| 30. | T. Knobloch, G. Rzepa, Yu. Illarionov, M. Waltl, F. Schanovsky, M. Jech, B. Stampfer, M. M. Furchi, T. Müller, T. Grasser: "Physical Modeling of the Hysteresis in MoS2 Transistors"; Talk: European Solid-State Device Research Conference (ESSDERC), Leuven, Belgium; 2017-09-11 - 2017-09-14; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2017), 284 - 287 doi:10.1109/ESSDERC.2017.8066647. BibTeX |
| 29. | M. Karner, O. Baumgartner, Z. Stanojevic, F. Schanovsky, G. Strof, Ch. Kernstock, H. W. Karner, G. Rzepa, T. Grasser: "Vertically Stacked Nanowire MOSFETs for Sub-10nm Nodes: Advanced Topography, Device, Variability, and Reliability Simulations"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 2016-12-03 - 2016-12-07; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2016), ISBN: 978-1-5090-3902-9, 30.7.1 - 30.7.4. BibTeX |
| 28. | T. Grasser, W. Gös, Y. Wimmer, F. Schanovsky, G. Rzepa, M. Waltl, K. Rott, H. Reisinger, V. Afanas´Ev, A. Stesmans, A. El-Sayed, A. Shluger: "On the Microscopic Structure of Hole Traps in pMOSFETs"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 2014-12-15 - 2014-12-17; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2014), ISBN: 978-1-4799-8001-7, 530 - 533 doi:10.1109/IEDM.2014.7047093. BibTeX |
| 27. | T. Grasser, K. Rott, H. Reisinger, M. Waltl, P.-J. Wagner, F. Schanovsky, W. Gös, G. Pobegen, B. Kaczer: "Hydrogen-Related Volatile Defects as the Possible Cause for the Recoverable Component of NBTI"; Talk: IEEE International Electron Devices Meeting (IEDM), Washington, DC, USA; 2013-12-09 - 2013-12-11; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2013), 409 - 412 doi:10.1109/IEDM.2013.6724637. BibTeX |
| 26. | T. Grasser, K. Rott, H. Reisinger, M. Waltl, F. Schanovsky, W. Gös, B. Kaczer: "Recent Advances in Understanding Oxide Traps in pMOS Transistors"; Talk: International Workshop on Dielectric Thin Films For Future Electron Devices: Science and Technology, Tokyo, Japan; (invited) 2013-11-07 - 2013-11-09; in "Proceedings of 2013 IWDTF", (2013), ISBN: 978-4-86348-383-5, 95 - 96. BibTeX |
| 25. | W. Gös, M. Toledano-Luque, F. Schanovsky, M. Bina, O. Baumgartner, B. Kaczer, T. Grasser: "Multi-Phonon Processes as the Origin of Reliability Issues"; Talk: Meeting of the Electrochemical Society (ECS), San Francisco, USA; (invited) 2013-10-27 - 2013-11-01; in "ECS Transactions 2013 - "Semiconductors, Dielectrics, and Materials for Nanoelectronics 11"", (2013), 58/7/, 31 - 47 doi:10.1149/05807.0031ecst. BibTeX |
| 24. | W. Gös, M. Toledano-Luque, O. Baumgartner, M. Bina, F. Schanovsky, B. Kaczer, T. Grasser: "Understanding Correlated Drain and Gate Current Fluctuations"; Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Arcachon, France; (invited) 2013-09-30 - 2013-10-04; in "20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2013), 51 - 56. BibTeX |
| 23. | O. Baumgartner, M. Bina, W. Gös, F. Schanovsky, M. Toledano-Luque, B. Kaczer, H. Kosina, T. Grasser: "Direct Tunneling and Gate Current Fluctuations"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 2013-09-03 - 2013-09-05; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 17 - 20 doi:10.1109/SISPAD.2013.6650563. BibTeX |
| 22. | F. Schanovsky, O. Baumgartner, W. Gös, T. Grasser: "A Detailed Evaluation of Model Defects as Candidates for the Bias Temperature Instability"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 2013-09-03 - 2013-09-05; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 1 - 4 doi:10.1109/SISPAD.2013.6650559. BibTeX |
| 21. | F. Schanovsky, W. Gös, T. Grasser: "Advanced Modeling of Charge Trapping at Oxide Defects"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; (invited) 2013-09-03 - 2013-09-05; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 451 - 458 doi:10.1109/SISPAD.2013.6650671. BibTeX |
| 20. | W. Gös, M. Toledano-Luque, O. Baumgartner, M. Bina, F. Schanovsky, B. Kaczer, T. Grasser: "Understanding Correlated Drain and Gate Current Fluctuations"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou, China; 2013-07-15 - 2013-07-19; in "Proceedings of the 20th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2013), ISBN: 978-1-4799-0478-5, 51 - 56. BibTeX |
| 19. | W. Gös, M. Toledano-Luque, O. Baumgartner, F. Schanovsky, B. Kaczer, T. Grasser: "A Comprehensive Model for Correlated Drain and Gate Current Fluctuations"; Talk: International Workshop on Computational Electronics (IWCE), Nara, Japan; 2013-06-04 - 2013-06-07; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7, 46 - 47. BibTeX |
| 18. | T. Grasser, K. Rott, H. Reisinger, P.-J. Wagner, W. Gös, F. Schanovsky, M. Waltl, M. Toledano-Luque, B. Kaczer: "Advanced Characterization of Oxide Traps: The Dynamic Time-Dependent Defect Spectroscopy"; Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2013-04-14 - 2013-04-18; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2013), 1 - 6. BibTeX |
| 17. | F. Schanovsky, T. Grasser: "On the Microscopic Limit of the Modified Reaction-Diffusion Model for the Negative Bias Temperature Instability"; Poster: International Reliability Physics Symposium (IRPS), Californi, USA; 2012-04-17 - 2012-04-19; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2012), ISBN: 978-1-4577-1680-5, 6 page(s) . BibTeX |
| 16. | F. Schanovsky, T. Grasser: "On the Microscopic Limit of the Reaction-Diffusion Model for the Negative Bias Temperature Instability"; Talk: IEEE International Integrated Reliability Workshop, South Lake Tahoe, USA; 2011-10-16 - 2011-10-20; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2011), 17 - 21. BibTeX |
| 15. | W. Gös, F. Schanovsky, H. Reisinger, B. Kaczer, T. Grasser: "Bistable Defects as the Cause for NBTI and RTN"; Talk: Gettering and Defect Engineering in Semiconductor Technology, Loipersdorf, Austria; (invited) 2011-09-25 - 2011-09-30; in "GADEST 2011: Abstract Booklet", (2011), 153. BibTeX |
| 14. | H. Ceric, R. Orio, F. Schanovsky, W. H. Zisser, S. Selberherr: "Multilevel Simulation for the Investigation of Fast Diffusivity Paths"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 135 - 138 doi:10.1109/SISPAD.2011.6035068. BibTeX |
| 13. | F. Schanovsky, O. Baumgartner, T. Grasser: "Multi Scale Modeling of Multi Phonon Hole Capture in the Context of NBTI"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 15 - 18 doi:10.1109/SISPAD.2011.6035038. BibTeX |
| 12. | W. Gös, F. Schanovsky, T. Grasser, H. Reisinger, B. Kaczer: "Advanced Modeling of Oxide Defects for Random Telegraph Noise"; Talk: International Conference on Noise and Fluctuations (ICNF), Toronto, Canada; 2011-06-12 - 2011-06-16; in "Proceedings of the 21st International Conference on Noise and Fluctuations", (2011), 4 page(s) . BibTeX |
| 11. | T. Grasser, B. Kaczer, W. Gös, H. Reisinger, T. Aichinger, Ph. Hehenberger, P.-J. Wagner, F. Schanovsky, J. Franco, Ph. J. Roussel, M. Nelhiebel: "Recent Advances in Understanding the Bias Temperature Instability"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; (invited) 2010-12-06 - 2010-12-08; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2010), 82 - 85 doi:10.1109/IEDM.2010.5703295. BibTeX |
| 10. | F. Schanovsky, W. Gös, T. Grasser: "Ab-Initio Calculation of the Vibrational Influence on Hole-Trapping"; Talk: International Workshop on Computational Electronics (IWCE), Pisa, Italy; 2010-10-26 - 2010-10-29; in "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2010), ISBN: 978-1-4244-9381-4, 163 - 166 doi:10.1109/IWCE.2010.5677989. BibTeX |
| 9. | W. Gös, F. Schanovsky, Ph. Hehenberger, P.-J. Wagner, T. Grasser: "Charge Trapping and the Negative Bias Temperature Instability"; Talk: 218th ECS Meeting, Las Vegas, USA; 2010-10-10 - 2010-10-15; in "Meet. Abstr. - Electrochem. Soc. 2010", (2010), ISBN: 978-1-56677-822-0, 565 page(s) . BibTeX |
| 8. | F. Schanovsky, W. Gös, T. Grasser: "Hole Capture into Oxide Defects in MOS Structures from First Principles"; Poster: Ψk - 2010 Conference, Berlin; 2010-09-12 - 2010-09-16; in "Abstract Book", (2010), 435. BibTeX |
| 7. | F. Schanovsky, W. Gös, T. Grasser: "Mulit-Phonon Hole-Trapping from First-Principles"; Talk: Workshop on Dielectrics in Microelectronics (WODIM), Bratislava; 2010-06-28 - 2010-06-30; in "Book of Abstracts", (2010), 54. BibTeX |
| 6. | T. Grasser, H. Reisinger, P. Wagner, B. Kaczer, F. Schanovsky, W. Gös: "The Time Dependent Defect Spectroscopy (TDDS) for the Characterization of the Bias Temperature Instability"; Talk: International Reliability Physics Symposium (IRPS), Anaheim; 2010-05-02 - 2010-05-06; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2010), ISBN: 978-1-4244-5431-0, 16 - 25. BibTeX |
| 5. | V. Sverdlov, O. Baumgartner, T. Windbacher, F. Schanovsky, S. Selberherr: "Thickness Dependence of the Effective Masses in a Strained Thin Silicon Film"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego, CA, USA; 2009-09-09 - 2009-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2009), ISBN: 978-1-4244-3947-8, 51 - 54 doi:10.1109/SISPAD.2009.5290252. BibTeX |
| 4. | V. Sverdlov, O. Baumgartner, T. Windbacher, F. Schanovsky, S. Selberherr: "Impact of Confinement and Stress on the Subband Parameters in Ultra-Thin Silicon Films"; Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Natal; 2009-08-31 - 2009-09-03; in "ECS Transactions", (2009), ISBN: 978-1-56677-737-7, 389 - 396. BibTeX |
| 3. | V. Sverdlov, O. Baumgartner, H. Kosina, S. Selberherr, F. Schanovsky, D. Esseni: "The Linear Combination of Bulk Bands-Method for Electron and Hole Subband Calculations in Strained Silicon Films and Surface Layers"; Talk: International Workshop on Computational Electronics (IWCE), Beijing, China; 2009-05-27 - 2009-05-29; in "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2009), ISBN: 978-1-4244-3926-3, 49 - 52 doi:10.1109/IWCE.2009.5091158. BibTeX |
| 2. | V. Sverdlov, O. Baumgartner, T. Windbacher, F. Schanovsky, S. Selberherr: "Impact of Confinement of Semiconductor and Band Engineering on Future Device Performance"; Talk: Meeting of the Electrochemical Society, Silicon-on-Insulator Technology and Devices, San Francisco; (invited) 2009-05-24 - 2009-05-29; in "215th ECS Meeting", (2009), 19/4, ISBN: 978-1-56677-712-4, 15 - 26. BibTeX |
| 1. | V. Sverdlov, T. Windbacher, O. Baumgartner, F. Schanovsky, S. Selberherr: "Valley Splitting in Thin Silicon Films from a Two-Band k·p Model"; Poster: International Conference on Ultimate Integration of Silicon (ULIS), Aachen; 2009-03-18 - 2009-03-20; in "Proceedings of the 10th International Conference on Ultimate Integration of Silicon", (2009), 277 - 280. BibTeX |
| 2. | F. Schanovsky, T. Grasser: "Bias Temperature Instabilities in highly-scaled MOSFETs"; Talk: 2012 CMOS Emerging Technologies, Vancouver, BC Canada; (invited) 2012-07-18 - 2012-07-21; . BibTeX |
| 1. | T. Grasser, H. Reisinger, P.-J. Wagner, W. Gös, F. Schanovsky, B. Kaczer: "The Time Dependent Defect Spectroscopy (TDDS) for the Characterization of the Bias Temperature Instability"; Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Gaeta; (invited) 2010-10-11. BibTeX |
| 1. | F. Schanovsky: "Atomistic Modeling in the Context of the Bias Temperature Instability"; Reviewer: T. Grasser, A. Schenk; Institut für Mikroelektronik, 2013, oral examination: 2013-03-19 doi:10.34726/hss.2013.28781. BibTeX |
| 1. | F. Schanovsky: "Dispersive Transport Modeling within the Multiple Trapping Framework"; Supervisor: T. Grasser; Institut für Mikroelektronik, 2008, final examination: 2008-03-14. BibTeX |
| 1. | T. Grasser, W. Gös, O. Triebl, Ph. Hehenberger, P.-J. Wagner, P. Schwaha, R. Heinzl, S. Holzer, R. Entner, S. Wagner, F. Schanovsky: "3 Year Report 2005-2007"; (2007), 34 page(s) . BibTeX |