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Publications Alexander Scharinger

8 records

Contributions to Books

2.  C. Lenz, A. Scharinger, P. Manstetten, A. Hössinger, J. Weinbub:
"A Novel Surface Mesh Simplification Method for Flux-Dependent Topography Simulations of Semiconductor Fabrication Processes";
in: "Scientific Computing in Electrical Engineering", M. van Beurden, N. Budko, W. Schilders (ed.); Springer, 2021, ISBN: 978-3-030-84238-3, 73 - 81. https://doi.org/10.1007/978-3-030-84238-3_8

1.  L.F. Aguinsky, G. Wachter, F. Rodrigues, A. Scharinger, A. Toifl, M. Trupke, U. Schmid, A. Hössinger, J. Weinbub:
"Feature-Scale Modeling of Low-Bias SF6 Plasma Etching of Si";
in: "Proceedings of the 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", B. Cretu (ed.); IEEE, 2021, 1 - 4. https://doi.org/10.1109/EuroSOI-ULIS53016.2021.9560685

Talks and Poster Presentations (with Proceedings-Entry)

6.  C. Lenz, A. Scharinger, M. Quell, P. Manstetten, A. Hössinger, J. Weinbub:
"Evaluating Parallel Feature Detection Methods for Implicit Surfaces";
Talk: Austrian-Slovenian HPC Meeting (ASHPC), Maribor, Slovenia (Virtual); 2021-05-31 - 2021-06-02; in: "Book of Abstracts of the Austrian-Slovenian HPC Meeting (ASHPC)", (2021), 31.

5.  L.F. Aguinsky, G. Wachter, A. Scharinger, F. Rodrigues, A. Toifl, M. Trupke, U. Schmid, A. Hössinger, J. Weinbub:
"Feature-Scale Modeling of Isotropic SF6 Plasma Etching of Si";
Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France; 2021-09-01 - 2021-09-03; in: "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2021), 54 - 55.

4.  F. Rodrigues, L.F. Aguinsky, A. Toifl, A. Scharinger, A. Hössinger, J. Weinbub:
"Surface Reaction and Topography Modeling of Fluorocarbon Plasma Etching";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Dallas, Texas (USA); 2021-09-27 - 2021-09-29; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2021), 229 - 232. https://doi.org/10.1109/SISPAD54002.2021.9592583

3.  C. Lenz, A. Scharinger, A. Hössinger, J. Weinbub:
"A Novel Surface Mesh Coarsening Method for Flux-Dependent Topography Simulations of Semiconductor Fabrication Processes";
Talk: International Conferences on Scientific Computing in Electrical Engineering (SCEE), Eindhoven, The Netherlands; 2020-02-16 - 2020-02-20; in: "Book of Abstracts of the International Conferences on Scientific Computing in Electrical Engineering (SCEE)", (2020), 99 - 100.

2.  A. Scharinger, P. Manstetten, A. Hössinger, J. Weinbub:
"Generative Model Based Adaptive Importance Sampling for Flux Calculations in Process TCAD";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan - virtual; 2020-09-23 - 2020-10-06; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2020), 39 - 42. https://doi.org/10.23919/SISPAD49475.2020.9241615

1.  P. Manstetten, G. Diamantopoulos, L. Gnam, L.F. Aguinsky, M. Quell, A. Toifl, A. Scharinger, A. Hössinger, M. Ballicchia, M. Nedjalkov, J. Weinbub:
"High Performance TCAD: From Simulating Fabrication Processes to Wigner Quantum Transport";
Talk: Workshop on High Performance TCAD (WHPTCAD), Chicago, IL, USA; 2019-05-24 - 2019-05-25; in: "Book of Abstracts of the Workshop on High Performance TCAD (WHPTCAD)", (2019), 13.