Publications Christian Schleich
17 recordsPublications in Scientific Journals
| 7. | Waltl, M., Hernandez, Y., Schleich, C., Waschneck, K., Stampfer, B., Reisinger, H., Grasser, T. (2022). Performance Analysis of 4h-SiC Pseudo-D CMOS Inverter Circuits Employing Physical Charge Trapping Models. Materials Science Forum, 1062, 688–695. https://doi.org/10.4028/p-pijkeu (reposiTUm) | |
| 6. | Waltl, M., Waldhoer, D., Tselios, K., Stampfer, B., Schleich, C., Rzepa, G., Enichlmair, H., Ioannidis, E. G., Minixhofer, R., Grasser, T. (2021). Impact of Single-Defects on the Variability of CMOS Inverter Circuits. Microelectronics Reliability, 126(114275), 114275. https://doi.org/10.1016/j.microrel.2021.114275 (reposiTUm) | |
| 5. | Waltl, M., Waldhör, D., Tselios, K., Stampfer, B., Schleich, C., Rzepa, G., Enichlmair, H., Ioannidis, E. G., Minixhofer, R., Grasser, T. (2021). Impact of Single-Defects on the Variability of CMOS Inverter Circuits. Microelectronics Reliability, 126, 1–6. https://doi.org/10.1016/j.microrel.2021.114275 (reposiTUm) | |
| 4. | Schleich, C., Waldhoer, D., Waschneck, K., Feil, M. W., Reisinger, H., Grasser, T., Waltl, M. (2021). Physical Modeling of Charge Trapping in 4h-SiC DMOSFET Technologies. IEEE Transactions on Electron Devices, 68(8), 4016–4021. https://doi.org/10.1109/ted.2021.3092295 (reposiTUm) | |
| 3. | Knobloch, T., Illarionov, Y. Yu., Ducry, F., Schleich, C., Wachter, S., Watanabe, K., Taniguchi, T., Mueller, T., Waltl, M., Lanza, M., Vexler, M. I., Luisier, M., Grasser, T. (2021). The Performance Limits of Hexagonal Boron Nitride as an Insulator for Scaled CMOS Devices Based on Two-Dimensional Materials. Nature Electronics, 4(2), 98–108. https://doi.org/10.1038/s41928-020-00529-x (reposiTUm) | |
| 2. | Waldhoer, D., Schleich, C., Michl, J., Stampfer, B., Tselios, K., Ioannidis, E. G., Enichlmair, H., Waltl, M., Grasser, T. (2021). Toward Automated Defect Extraction From Bias Temperature Instability Measurements. IEEE Transactions on Electron Devices, 68(8), 4057–4063. https://doi.org/10.1109/ted.2021.3091966 (reposiTUm) | |
| 1. | Feil, M., Huerner, A., Puschkarsky, K., Schleich, C., Eichinger, T., Gustin, W., Reisinger, H., Grasser, T. (2020). The Impact of Interfacial Charge Trapping on the Reproducibility of Measurements of Silicon Carbide MOSFET Device Parameters. Crystals, 10(12), 1143. https://doi.org/10.3390/cryst10121143 (reposiTUm) | |
Contributions to Books
| 1. | Waltl, M., Hernandez, Y., Schleich, C., Waschneck, K. A., Stampfer, B., Reisinger, H., Grasser, T. (2022). Performance Analysis of 4h-SiC Pseudo-D CMOS Inverter Circuits Employing Physical Charge Trapping Models. In J. F. Michaud, L. V. Phung, D. Alquier, D. Planson (Eds.), Silicon Carbide and Related Materials 2021 (pp. 688–695). Trans Tech Publications Ltd , Switzerland. (reposiTUm) | |
Talks and Poster Presentations (with Proceedings-Entry)
| 5. | Michl, J., Grill, A., Stampfer, B., Waldhoer, D., Schleich, C., Knobloch, T., Ioannidis, E., Enichlmair, H., Minixhofer, R., Kaczer, B., Parvais, B., Govoreanu, B., Radu, I., Grasser, T., Waltl, M. (2021). Evidence of Tunneling Driven Random Telegraph Noise in Cryo-Cmos. In Proceedings of the IEEE International Electron Devices Meeting (IEDM) (pp. 31.3.1–31.3.4), San Francisco, CA, United States. https://doi.org/10.1109/IEDM19574.2021.9720501 (reposiTUm) | |
| 4. | Ruch, B., Pobegen, G., Schleich, C., Grasser, T. (2020). Generation of Hot-Carrier Induced Border and Interface Traps, Investigated by Spectroscopic Charge Pumping. In 2020 IEEE International Reliability Physics Symposium (IRPS), Waikoloa, HI, USA. https://doi.org/10.1109/irps45951.2020.9129513 (reposiTUm) | |
| 3. | Vasilev, A., Jech, M., Grill, A., Rzepa, G., Schleich, C., Makarov, A., Pobegen, G., Grasser, T., Waltl, M., Tyaginov, S. (2020). Modeling the Hysteresis of Current-Voltage Characteristics in 4h-SiC Transistors. In 2020 IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA. https://doi.org/10.1109/iirw49815.2020.9312864 (reposiTUm) | |
| 2. | Berens, J., Weger, M., Pobegen, G., Aichinger, T., Rescher, G., Schleich, C., Grasser, T. (2020). Similarities and Differences of BTI in SiC and Si Power MOSFETs. In 2020 IEEE International Reliability Physics Symposium (IRPS), Waikoloa, HI, USA. https://doi.org/10.1109/irps45951.2020.9129259 (reposiTUm) | |
| 1. | Schleich, C., Berens, J., Rzepa, G., Pobegen, G., Rescher, G., Tyaginov, S., Grasser, T., Waltl, M. (2019). Physical Modeling of Bias Temperature Instabilities in SiC MOSFETs. In 2019 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA. https://doi.org/10.1109/iedm19573.2019.8993446 (reposiTUm) | |
Doctor's Theses (authored and supervised)
| 1. | Schleich, C. (2022). Modeling of Defect Related Reliability Phenomena in SiC Power-MOSFETs Technische Universität Wien. https://doi.org/10.34726/hss.2022.105546 (reposiTUm) | |
Diploma and Master Theses (authored and supervised)
| 2. | Schleich, C. (2019). Charakterisierung Und Modellierung Von SiC Transistoren Technische Universität Wien. (reposiTUm) | |
| 1. | C. Schleich: "Vergleich zweier Methoden zur ökologischen Bewertung von Gebäuden"; Supervisor: P.H. Brunner, R. Huber; Institut für Wassergüte und Abfallwirtschaft, 2003. | |
Scientific Reports
| 1. | C. Schleich: "Anwendung zweier Methoden zur ökologischen Bewertung an einem Gebäude"; Report for Institut für Wassergüte und Abfallwirtschaft, TU-Wien; 2003. | |