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Publications Christian Schleich

7 records


Publications in Scientific Journals


2. T. Knobloch, Yu. Illarionov, F. Ducry, C. Schleich, S. Wachter, K. Watanabe, T. Taniguchi, T. Müller, M. Waltl, M. Lanza, M. I. Vexler, M. Luisier, T. Grasser:
"The Performance Limits of Hexagonal Boron Nitride as an Insulator for Scaled CMOS Devices Based on Two-Dimensional Materials";
Nature Electronics, 4, (2021), 98 - 108 doi:10.1038/s41928-020-00529-x. BibTeX

1. M. Feil, A. Huerner, K. Puschkarsky, C. Schleich, T. Eichinger, W. Gustin, H. Reisinger, T. Grasser:
"The Impact of Interfacial Charge Trapping on the Reproducibility of Measurements of Silicon Carbide MOSFET Device Parameters";
Crystals, 10, (invited) (2020), 1143-1 - 1143-14 doi:10.3390/cryst10121143. BibTeX


Talks and Poster Presentations (with Proceedings-Entry)


4. A. Vasilev, M. Jech, A. Grill, G. Rzepa, C. Schleich, A. Makarov, G. Pobegen, T. Grasser, M. Waltl, S. E. Tyaginov:
"Modeling the Hysteresis of Current-Voltage Characteristics in 4H-SiC Transistors";
Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA - virtual; 2020-10-04 - 2020-10-08; in "Proceedings of the International Integrated Reliability Workshop (IIRW)", (2020), 1 - 4 doi:10.1109/IIRW49815.2020.9312864. BibTeX

3. J. Berens, M. Weger, G. Pobegen, T. Aichinger, G. Rescher, C. Schleich, T. Grasser:
"Similarities and Differences of BTI in SiC and Si Power MOSFETs";
Talk: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 2020-04-28 - 2020-05-30; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), ISBN: 978-1-7281-3200-6, 1 - 6 doi:10.1109/IRPS45951.2020.9129259. BibTeX

2. B. Ruch, G. Pobegen, C. Schleich, T. Grasser:
"Generation of Hot-Carrier Induced Border and Interface Traps, Investigated by Spectroscopic Charge Pumping";
Talk: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 2020-04-28 - 2020-05-30; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), ISBN: 978-1-7281-3200-6, 1 - 6 doi:10.1109/IRPS45951.2020.9129513. BibTeX

1. C. Schleich, J. Berens, G. Rzepa, G. Pobegen, G. Rescher, S. E. Tyaginov, T. Grasser, M. Waltl:
"Physical Modeling of Bias Temperature Instabilities in SiC MOSFETs";
Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, USA; 2019-12-07 - 2019-12-11; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2019), doi:10.1109/IEDM19573.2019.8993446. BibTeX


Diploma and Master Theses (authored and supervised)


1. C. Schleich:
"Charakterisierung und Modellierung von SiC Transistoren";
Supervisor: T. Grasser, M. Waltl; Institut für Mikroelektronik, 2019, final examination: 2019-01-25. BibTeX

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Institute for Microelectronics
Head: Univ. Prof. Dipl.-Ing. Dr. techn. Tibor Grasser
Deputy Head: O. Univ. Prof. Dipl.-Ing. Dr. techn. Dr.h.c. Siegfried Selberherr
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