Publications Christian Schleich
13 records
| 6. | M. Waltl, Y. Hernandez, C. Schleich, K. Waschneck, B. Stampfer, H. Reisinger, T. Grasser: "Performance Analysis of 4H-SiC Pseudo-D CMOS Inverter Circuits Employing Physical Charge Trapping Models"; Materials Science Forum, 1062, (2022), 688 - 695 doi:10.4028/p-pijkeu. BibTeX |
| 5. | T. Knobloch, Yu. Illarionov, F. Ducry, C. Schleich, S. Wachter, K. Watanabe, T. Taniguchi, T. Müller, M. Waltl, M. Lanza, M. I. Vexler, M. Luisier, T. Grasser: "The Performance Limits of Hexagonal Boron Nitride as an Insulator for Scaled CMOS Devices Based on Two-Dimensional Materials"; Nature Electronics, 4, (2021), 98 - 108 doi:10.1038/s41928-020-00529-x. BibTeX |
| 4. | C. Schleich, D. Waldhör, K. Waschneck, M. Feil, H. Reisinger, T. Grasser, M. Waltl: "Physical Modeling of Charge Trapping in 4H-SiC DMOSFET Technologies"; IEEE Transactions on Electron Devices, 68, (2021), 4016 - 4021 doi:10.1109/TED.2021.3092295. BibTeX |
| 3. | D. Waldhör, C. Schleich, J. Michl, B. Stampfer, K. Tselios, E. Ioannidis, H. Enichlmair, M. Waltl, T. Grasser: "Toward Automated Defect Extraction From Bias Temperature Instability Measurements"; IEEE Transactions on Electron Devices, 68, (2021), 4057 - 4063 doi:10.1109/TED.2021.3091966. BibTeX |
| 2. | M. Waltl, D. Waldhör, K. Tselios, B. Stampfer, C. Schleich, G. Rzepa, H. Enichlmair, E. Ioannidis, R. Minixhofer, T. Grasser: "Impact of Single-Defects on the Variability of CMOS Inverter Circuits"; Microelectronics Reliability, 126, (2021), 114275-1 - 114275-6 doi:10.1016/j.microrel.2021.114275. BibTeX |
| 1. | M. Feil, A. Huerner, K. Puschkarsky, C. Schleich, T. Eichinger, W. Gustin, H. Reisinger, T. Grasser: "The Impact of Interfacial Charge Trapping on the Reproducibility of Measurements of Silicon Carbide MOSFET Device Parameters"; Crystals, 10, (invited) (2020), 1143-1 - 1143-14 doi:10.3390/cryst10121143. BibTeX |
| 1. | M. Waltl, Y. Hernandez, C. Schleich, K. Waschneck, B. Stampfer, H. Reisinger, T. Grasser: "Performance Analysis of 4H-SiC Pseudo-D CMOS Inverter Circuits Employing Physical Charge Trapping Models"; in "Silicon Carbide and Related Materials 2021", J. Michaud, L. Phung, D. Alquier, D. Planson (ed); Trans Tech Publications Ltd , Switzerland, 2022, ISBN: 9783035727609, 688 - 695 doi:10.1002/adma.202201082. BibTeX |
| 5. | J. Michl, A. Grill, D. Waldhör, C. Schleich, T. Knobloch, E. Ioannidis, H. Enichlmair, R. Minixhofer, B. Kaczer, B. Parvais, B. Govoreanu, I. Radu, T. Grasser, M. Waltl: "Evidence of Tunneling Driven Random Telegraph Noise in Cryo-CMOS"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, USA; 2021-12-11 - 2021-12-15; in "2021 IEEE International Electron Devices Meeting (IEDM)", (2021), 31.3.1 - 31.3.3 doi:10.1109/IEDM19574.2021.9720501. BibTeX |
| 4. | A. Vasilev, M. Jech, A. Grill, G. Rzepa, C. Schleich, A. Makarov, G. Pobegen, T. Grasser, M. Waltl, S. E. Tyaginov: "Modeling the Hysteresis of Current-Voltage Characteristics in 4H-SiC Transistors"; Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA - virtual; 2020-10-04 - 2020-10-08; in "Proceedings of the International Integrated Reliability Workshop (IIRW)", (2020), 1 - 4 doi:10.1109/IIRW49815.2020.9312864. BibTeX |
| 3. | B. Ruch, G. Pobegen, C. Schleich, T. Grasser: "Generation of Hot-Carrier Induced Border and Interface Traps, Investigated by Spectroscopic Charge Pumping"; Talk: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 2020-04-28 in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), ISBN: 978-1-7281-3200-6, 1 - 6 doi:10.1109/IRPS45951.2020.9129513. BibTeX |
| 2. | J. Berens, M. Weger, G. Pobegen, T. Aichinger, G. Rescher, C. Schleich, T. Grasser: "Similarities and Differences of BTI in SiC and Si Power MOSFETs"; Talk: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 2020-03-29 - 2020-04-02; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), ISBN: 978-1-7281-3200-6, 1 - 6 doi:10.1109/IRPS45951.2020.9129259. BibTeX |
| 1. | C. Schleich, J. Berens, G. Rzepa, G. Pobegen, G. Rescher, S. E. Tyaginov, T. Grasser, M. Waltl: "Physical Modeling of Bias Temperature Instabilities in SiC MOSFETs"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, USA; 2019-12-07 - 2019-12-11; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2019), doi:10.1109/IEDM19573.2019.8993446. BibTeX |
| 1. | C. Schleich: "Charakterisierung und Modellierung von SiC Transistoren"; Supervisor: T. Grasser, M. Waltl; Institut für Mikroelektronik, 2019, final examination: 2019-01-25. BibTeX |