Publications Siegfried Selberherr

2030 records

Books and Editorships

50.   Jagannathan, H., Martino, J., Karim, Z., Kakushima, K., Timans, P., Gousev, E., De G. S., Misra, D., Obeng, Y., Roozeboom, F., Nguyen, B., Raskin, J., Gamiz, F., Selberherr, S., Simoen, E., Ishii, H. (Eds.). (2023).
Silicon Compatible Emerging Materials, Processes, and Technologies for Advanced CMOS and Post-Cmos Applications 13, Advanced CMOS-Compatible Semiconductor Devices 20.
Vol.111, ECS The Electrochemical Society. (reposiTUm)

49.   Nedjalkov, M., Dimov, I., Selberherr, S. (Eds.). (2021).
Stochastic Approaches to Electron Transport in Micro- And Nanostructures.
Birkhäuser Basel. https://doi.org/10.1007/978-3-030-67917-0 (reposiTUm)

48.   Martino, J. A., Nguyen, B., Gamiz, F., Ishii, H., Raskin, J., Selberherr, S., Simoen, E. (Eds.). (2020).
Advanced CMOS-Compatible Semiconductor Devices 19.
ECS Transactions, The Electrochemical Society, Vol.97, No.5. (reposiTUm)

47.   Martino, J. A., Raskin, J., Selberherr, S., Ishii, H., Gamiz, F., Nguyen, B., Yoshino, A. (Eds.). (2018).
Advanced CMOS-Compatible Semiconductor Devices 18.
ECS Transactions, The Electrochemical Society, Vol.85, No.5. (reposiTUm)

46.   Weinbub, J., Jonker, B., Riechert, H., Machida, T., Goodnick, S., Selberherr, S. (Eds.). (2018).
Innovative Nanoscale Devices and Systems.
Society for Micro- and Nanoelectronics. (reposiTUm)

45.   Weinbub, J., Ferry, D., Knezevic, I., Nedjalkov, M., Selberherr, S. (Eds.). (2017).
Book of Abstracts of the 2nd International Wigner Workshop.
Institute for Microelectronics, TU Wien. (reposiTUm)

44.   Sverdlov, V., Selberherr, S. (2017).
Editorial: Special Issue of Solid-State Electronics, Dedicated to EUROSOI-ULIS 2016.
Solid-State Electronics, Vol.128 (pp. 1–2). https://doi.org/10.1016/j.sse.2016.10.015 (reposiTUm)

43.   Matsumoto, K., Jonker, B., Weinbub, J., Machida, T., Selberherr, S., Goodnick, S. (Eds.). (2017).
Innovative Nanoscale Devices and Systems.
Society for Micro- and Nanoelectronics. (reposiTUm)

42.   Sverdlov, V., Selberherr, S. (Eds.). (2017).
Special Issue: Extended Papers Selected From EUROSOI-ULIS 2016.
Solid-State Electronics, Elsevier. (reposiTUm)

41.   Sverdlov, V., Cristoloveanu, S., Gamiz, F., Selberherr, S. (Eds.). (2016).
2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon EUROSOI-ULIS.
IEEE. (reposiTUm)

40.   Sverdlov, V., Gamiz, F., Cristoloveanu, S., Selberherr, S. (Eds.). (2016).
2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon EUROSOI-ULIS Book of Abstracts.
Society for Micro- and Nanoelectronics. (reposiTUm)

39.   Jonker, B., Porod, W., Sverdlov, V., Matsumoto, K., Selberherr, S., Goodnick, S. (Eds.). (2016).
Innovative Nanoscale Devices and Systems.
Society for Micro- and Nanoelectronics. (reposiTUm)

38.   Sverdlov, V., Selberherr, S., Gamiz, F., Cristoloveanu, S. (2016).
Preface 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS).
In 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS). IEEE Xplore. https://doi.org/10.1109/ulis.2016.7440034 (reposiTUm)

37.   Omura, Y., Martino, J. A., Raskin, J., Selberherr, S., Ishii, H., Gamiz, F., Nguyen, B. (Eds.). (2015).
Advanced CMOS-Compatible Semiconductor Devices 17.
ECS Transactions, The Electrochemical Society, Vol.66, No.5. (reposiTUm)

36.   Sverdlov, V., Jonker, B., Ishibashi, K., Goodnick, S., Selberherr, S. (Eds.). (2014).
Innovative Nanoscale Devices and Systems.
Society for Micro- and Nanoelectronics. (reposiTUm)

35.  M. Pourfath:
"The Non-Equilibrium Green's Function Method for Nanoscale Device Simulation";
in series "Computational Microelectronics", series editor: S. Selberherr; Springer-Verlag, Wien - New York, 2014, ISBN: 978-3-7091-1800-9, 256 pages. https://doi.org/10.1007/978-3-7091-1800-9

34.   Mori, N., Selberherr, S. (Eds.). (2013).
16th International Workshop on Computational Electronics Book of Abstracts.
Society for Micro- and Nanoelectronics. (reposiTUm)

33.   Omura, Y., Gamiz, F., Nguyen, B., Ishii, H., Martino, J. A., Selberherr, S., Raskin, J. (Eds.). (2013).
Advanced Semiconductor-On-Insulator Technology and Related Physics 16.
ECS Transactions, The Electrochemical Society, Vol.53, No.5. (reposiTUm)

32.   Ishibashi, K., Goodnick, S., Selberherr, S., Fujiwara, A. (Eds.). (2012).
Innovative Nanoscale Devices and Systems.
Society for Micro- and Nanoelectronics. (reposiTUm)

31.   Omura, Y., Gamiz, F., Ishii, H., Martino, J. A., Nguyen, B., Raskin, J., Selberherr, S. (Eds.). (2011).
Advanced Semiconductor-On-Insulator Technology and Related Physics 15.
ECS Transactions, The Electrochemical Society, Vol.35, No.5. (reposiTUm)

30.  S.-M Hong, A.-T Pham, C. Jungemann:
"Deterministic Solvers for the Boltzmann Transport Equation";
in series "Computational Microelectronics", series editor: S. Selberherr; Springer-Verlag, Wien - New York, 2011, ISBN: 978-3-7091-0777-5, 227 pages. https://doi.org/10.1007/978-3-7091-0778-2

29.   Sangiorgi, E., Asenov, A., Bennett, H. S., Dutton, R. W., Esseni, D., Giles, M. D., Hane, M., Nishi, K., Ranaweera, J., Selberherr, S. (2011).
Foreword Special Issue on Characterization of Nano CMOS Variability by Simulation and Measurements.
IEEE Transactions on Electron Devices, Vol.58 (pp. 2190–2196). https://doi.org/10.1109/ted.2011.2160884 (reposiTUm)

28.  V. Sverdlov:
"Strain-Induced Effects in Advanced MOSFETs";
in series "Computational Microelectronics", series editor: S. Selberherr; Springer-Verlag, Wien - New York, 2011, ISBN: 978-3-7091-0381-4, 252 pages. https://doi.org/10.1007/978-3-7091-0382-1

27.   Klima, R., Selberherr, S. (2010).
Programmieren in C.
Springer-Verlag, Wien - New York. https://doi.org/10.1007/978-3-7091-0393-7 (reposiTUm)

26.   Ceric, H., Selberherr, S. (2009).
Editorial Preface to the Special Section on Electromigration Published in March 2009.
IEEE Transactions on Device and Materials Reliability, Vol.9 (p. 103). https://doi.org/10.1109/tdmr.2009.2020086 (reposiTUm)

25.   Kosina, H., Selberherr, S. (2009).
Guest Editorial.
Journal of Computational Electronics, Vol.8, SPRINGER (p. 173). https://doi.org/10.1007/s10825-009-0302-2 (reposiTUm)

24.   Swart, J. W., Selberherr, S., Susin, A. A., Diniz, J. A., Morimoto, N. (Eds.). (2008).
Microelectronics Technology and Devices - SBMICRO 2008.
ECS Transactions, The Electrochemical Society, Vol.14, No.1. (reposiTUm)

23.   Kosina, H., Selberherr, S. (2007).
Editorial.
Journal of Computational Electronics, Vol.5, SPRINGER (p. 283). https://doi.org/10.1007/s10825-006-0001-1 (reposiTUm)

22.   Sangiorgi, E., Asenov, A., Bennett, H. S., Dutton, R. W., Esseni, D., Giles, M. D., Hane, M., Jungemann, C., Nishi, K., Selberherr, S., Takagi, S. (2007).
Foreword Special Issue on Simulation and Modeling of Nanoelectronics Devices.
IEEE Transactions on Electron Devices, Vol.54 (pp. 2072–2078). https://doi.org/10.1109/ted.2007.905342 (reposiTUm)

21.   Klima, R., Selberherr, S. (2007).
Programmieren in C, 2. Auflage.
Springer-Verlag, Wien - New York. (reposiTUm)

20.   Grasser, T., Selberherr, S. (Eds.). (2007).
Simulation of Semiconductor Processes and Devices 2007.
Springer-Verlag, Wien - New York. https://doi.org/10.1007/978-3-211-72861-1 (reposiTUm)

19.   Kosina, H., Selberherr, S. (Eds.). (2006).
11th International Workshop on Computational Electronics Book of Abstracts.
Technische Universität Wien, Institut für Mikroelektronik. (reposiTUm)

18.  V. Palankovski, R. Quay:
"Analysis and Simulation of Heterostructure Devices";
in series "Computational Microelectronics", series editor: S. Selberherr; Springer-Verlag, Wien - New York, 2004, ISBN: 978-3-7091-7193-6, 309 pages. https://doi.org/10.1007/978-3-7091-0560-3

17.  P. Pichler:
"Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon";
in series "Computational Microelectronics", series editor: S. Selberherr; Springer-Verlag, Wien - New York, 2004, ISBN: 978-3-7091-7204-9, 554 pages. https://doi.org/10.1007/978-3-7091-0597-9

16.  C. Jungemann, B. Meinerzhagen:
"Hierarchical Device Simulation";
in series "Computational Microelectronics", series editor: S. Selberherr; Springer-Verlag, Wien - New York, 2003, ISBN: 978-3-7091-7226-1, 254 pages. https://doi.org/10.1007/978-3-7091-6086-2

15.  R. Klima, S. Selberherr:
"Programmieren in C";
Springer-Verlag, Wien - New York, Wien, 2003, ISBN: 978-3-211-40514-7; 354 pages. https://doi.org/10.1007/978-3-7091-3804-5

14.  C. Wasshuber:
"Computational Single-Electronics";
in series "Computational Microelectronics", series editor: S. Selberherr; Springer-Verlag, Wien - New York, 2001, ISBN: 978-3-7091-7256-8, 278 pages. https://doi.org/10.1007/978-3-7091-6257-6

13.  A. Nathan, H. Baltes:
"Microtransducer CAD";
in series "Computational Microelectronics", series editor: S. Selberherr; Springer-Verlag, Wien - New York, 1999, ISBN: 978-3-7091-7321-3, 427 pages. https://doi.org/10.1007/978-3-7091-6428-0

12.  A. Schenk:
"Advanced Physical Models for Silicon Device Simulation";
in series "Computational Microelectronics", series editor: S. Selberherr; Springer-Verlag, Wien - New York, 1998, ISBN: 978-3-7091-7334-3, 349 pages. https://doi.org/10.1007/978-3-7091-6494-5

11.  D. Schroeder:
"Modelling of Interface Carrier Transport for Device Simulation";
in series "Computational Microelectronics", series editor: S. Selberherr; Springer-Verlag, Wien - New York, 1994, ISBN: 978-3-7091-7368-8, 221 pages. https://doi.org/10.1007/978-3-7091-6644-4

10.  N. Arora:
"MOSFET Models for VLSI Circuit Simulation";
in series "Computational Microelectronics", series editor: S. Selberherr; Springer-Verlag, Wien - New York, 1993, ISBN: 978-3-7091-9249-8, 605 pages. https://doi.org/10.1007/978-3-7091-9247-4

9.  W. Joppich, S. Mijalkovic:
"Multigrid Methods for Process Simulation";
in series "Computational Microelectronics", series editor: S. Selberherr; Springer-Verlag, Wien - New York, 1993, ISBN: 978-3-7091-9255-9, 309 pages. https://doi.org/10.1007/978-3-7091-9253-5

8.   Selberherr, S., Stippel, H., Strasser, R. (Eds.). (1993).
Simulation of Semiconductor Devices and Processes.
Springer-Verlag, Wien - New York. https://doi.org/10.1007/978-3-7091-6657-4 (reposiTUm)

7.   Fasching, F., Halama, S., Selberherr, S. (Eds.). (1993).
Technology CAD Systems.
Springer-Verlag, Wien - New York. https://doi.org/10.1007/978-3-7091-9315-0 (reposiTUm)

6.  W. Hänsch:
"The Drift Diffusion Equation and Its Applications in MOSFET Modeling";
in series "Computational Microelectronics", series editor: S. Selberherr; Springer-Verlag, Wien - New York, 1991, ISBN: 978-3-7091-9097-5, 271 pages. https://doi.org/10.1007/978-3-7091-9095-1

5.  H.C. DeGraaff, F.M. Klassen:
"Compact Transistor Modeling for Circuit Design";
in series "Computational Microelectronics", series editor: S. Selberherr; Springer-Verlag, Wien - New York, 1990, ISBN: 978-3-7091-9045-6, 351 pages. https://doi.org/10.1007/978-3-7091-9043-2

4.  C. Jacoboni, P. Lugli:
"The Monte Carlo Method for Semiconductor Device Simulation";
in series "Computational Microelectronics", series editor: S. Selberherr; Springer-Verlag, Wien - New York, 1989, ISBN: 978-3-7091-7453-1, 356 pages. https://doi.org/10.1007/978-3-7091-6963-6

3.  P. Markowich:
"The Stationary Semiconductor Device Equations";
in series "Computational Microelectronics", series editor: S. Selberherr; Springer-Verlag, Wien - New York, 1986, ISBN: 978-3-211-99937-0, 193 pages. https://doi.org/10.1007/978-3-7091-3678-2

2.   Selberherr, S. (1984).
Analysis and Simulation of Semiconductor Devices.
Springer-Verlag, Wien - New York. https://doi.org/10.1007/978-3-7091-8752-4 (reposiTUm)

1.   Selberherr, S. (Eds.). (1981).
Two Dimensional Modeling of MOS Transistors.
Semiconductor Physics, Inc.. (reposiTUm)

Publications in Scientific Journals

400.   Jorstad, N. P., Fiorentini, S., Ender, J., Wolfgang Goes, Selberherr, S., Sverdlov, V. (2024).
Micromagnetic Modeling of SOT-MRAM Dynamics.
PHYSICA B-CONDENSED MATTER, 676, Article 415612. https://doi.org/10.1016/j.physb.2023.415612 (reposiTUm)

399.   Hadamek, T., Jorstad, N. P., Goes, W., Selberherr, S., Sverdlov, V. (2024).
Numerical Study of Two-Terminal SOT-MRAM.
Physica B: Condensed Matter, 673, 1–6. https://doi.org/10.1016/j.physb.2023.415362 (reposiTUm)

398.   Hadamek, T., Jorstad, N. P., Lacerda de Orio, R., Goes, W., Selberherr, S., Sverdlov, V. (2023).
A Comprehensive Study of Temperature and Its Effects in SOT-MRAM Devices.
Micromachines, 14(8), 1–14. https://doi.org/10.3390/mi14081581 (reposiTUm)

397.   Bendra, M., Fiorentini, S., Selberherr, S., Gös, W., Sverdlov, V. (2023).
A Multi-Level Cell for Ultra-Scaled STT-MRAM Realized by Back-Hopping.
Solid-State Electronics, 208, Article 108738. https://doi.org/10.1016/j.sse.2023.108738 (reposiTUm)

396.   Fiorentini, S., Pruckner, B., Goes, W., Selberherr, S., Sverdlov, V. (2023).
Accurate Torque Evaluation in Elongated Ultra-Scaled STT-MRAM Devices.
ECS Transactions, 111(1), 181–186. https://doi.org/10.1149/11101.0181ecst (reposiTUm)

395.   Fiorentini, S., Ender, J., Selberherr, S., Lacerda de Orio, R., Goes, W., Sverdlov, V. (2023).
Comprehensive Evaluation of Torques in Ultra-Scaled MRAM Devices.
Solid-State Electronics, 199, Article 108491. https://doi.org/10.1016/j.sse.2022.108491 (reposiTUm)

394.   Medina-Bailon, C., Nedialkov, M. H., Georgiev, V., Selberherr, S., Asenov, A. (2023).
Comprehensive Mobility Study of Silicon Nanowire Transistors Using Multi-Subband Models.
Nano Express, 4(2), Article 025005. https://doi.org/10.1088/2632-959X/acdb8a (reposiTUm)

393.   Ceric, H., Zahedmanesh, H., Croes, K., Lacerda de Orio, R., Selberherr, S. (2023).
Electromigration-Induced Void Evolution and Failure of Cu/SiCN Hybrid Bonds.
Journal of Applied Physics, 133(10), Article 105101. https://doi.org/10.1063/5.0134692 (reposiTUm)

392.   Ceric, H., Lacerda de Orio, R., Selberherr, S. (2023).
Microstructural Impact on Electromigration Reliability of Gold Interconnects.
Solid-State Electronics, 200, Article 108528. https://doi.org/10.1016/j.sse.2022.108528 (reposiTUm)

391.   Hadamek, T., Selberherr, S., Wolfgang Goes, Sverdlov, V. (2023).
Modeling Thermal Effects in STT-MRAM.
Solid-State Electronics, 200, Article 108522. https://doi.org/10.1016/j.sse.2022.108522 (reposiTUm)

390.   Ceric, H., Lacerda de Orio, R., Selberherr, S. (2023).
Statistical Study of Electromigration in Gold Interconnects.
Microelectronics Reliability, 147, 1–7. https://doi.org/10.1016/j.microrel.2023.115061 (reposiTUm)

389.   Bendra, M., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V. (2023).
The Influence of Interface Effects on the Switching Behavior in Ultra-Scaled MRAM Cells.
Solid-State Electronics, 201, Article 108590. https://doi.org/10.1016/j.sse.2023.108590 (reposiTUm)

388.   Ferry, D. K., Weinbub, J., Nedjalkov, M., Selberherr, S. (2022).
A Review of Quantum Transport in Field-Effect Transistors.
Semiconductor Science and Technology, 37(4), 043001. https://doi.org/10.1088/1361-6641/ac4405 (reposiTUm)

387.   Selberherr, S., Sverdlov, V. (2022).
About Electron Transport and Spin Control in Semiconductor Devices.
Solid-State Electronics, 197, Article 108443. https://doi.org/10.1016/j.sse.2022.108443 (reposiTUm)

386.  L. Filipovic, S. Selberherr:
"Application of Two-Dimensional Materials towards CMOS-Integrated Gas Sensors";
Nanomaterials (invited), 12 (2022), 1651.

385.   Filipovic, L., Selberherr, S. (2022).
Application of Two-Dimensional Materials Towards CMOS-integrated Gas Sensors.
Nanomaterials, 12(20), Article 3651. https://doi.org/10.3390/nano12203651 (reposiTUm)

384.   Knobloch, T., Selberherr, S., Grasser, T. (2022).
Challenges for Nanoscale CMOS Logic Based on Two-Dimensional Materials.
Nanomaterials, 12(20), 3548. https://doi.org/10.3390/nano12203548 (reposiTUm)

383.   Loch, W. J., Fiorentini, S., Jørstad, N. P., Goes, W., Selberherr, S., Sverdlov, V. (2022).
Double Reference Layer STT-MRAM Structures With Improved Performance.
Solid-State Electronics, 194(108335), Article 108335. https://doi.org/10.1016/j.sse.2022.108335 (reposiTUm)

382.   Fiorentini, S., Lacerda de Orio, R., Ender, J., Selberherr, S., Bendra, M., Jorstad, N. P., Goes, W., Sverdlov, V. (2022).
Finite Element Method for MRAM Switching Simulations.
WSEAS Transactions on Systems and Controls, 17, 585–588. https://doi.org/10.37394/23203.2022.17.64 (reposiTUm)

381.   Jørstad, N. P., Fiorentini, S., Loch, W. J., Goes, W., Selberherr, S., Sverdlov, V. (2022).
Finite Element Modeling of Spin-Orbit Torques.
Solid-State Electronics, 194, Article 108323. https://doi.org/10.1016/j.sse.2022.108323 (reposiTUm)

380.   Bendra, M., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V. (2022).
Interface Effects in Ultra-Scaled MRAM Cells.
Solid-State Electronics, 194(108373), 108373. https://doi.org/10.1016/j.sse.2022.108373 (reposiTUm)

379.   Ender, J., Lacerda de Orio, R., Fiorentini, S., Selberherr, S., Goes, W., Sverdlov, V. (2022).
Reinforcement Learning to Reduce Failures in SOT-MRAM Switching.
Microelectronics Reliability, 135(114570), 114570. https://doi.org/10.1016/j.microrel.2022.114570 (reposiTUm)

378.   Fiorentini, S., Ender, J., Selberherr, S., Goes, W., Sverdlov, V. (2022).
Spin Transfer Torque Evaluation Based on Coupled Spin and Charge Transport: A Finite Element Method Approach.
Journal on Systemics, Cybernetics and Informatics, 20(4), 40–44. https://doi.org/10.54808/JSCI.20.04.40 (reposiTUm)

377.   Fiorentini, S., Bendra, M., Ender, J., Lacerda de Orio, R., Goes, W., Selberherr, S., Sverdlov, V. (2022).
Spin and Charge Drift-Diffusion in Ultra-Scaled MRAM Cells.
Scientific Reports, 12, Article 20958. https://doi.org/10.1038/s41598-022-25586-4 (reposiTUm)

376.   Hadámek, T., Fiorentini, S., Bendra, M., Ender, J., de Orio, R. L., Goes, W., Selberherr, S., Sverdlov, V. (2022).
Temperature Increase in STT-MRAM at Writing: A Fully Three-Dimensional Finite Element Approach.
Solid-State Electronics, 193(108269), 108269. https://doi.org/10.1016/j.sse.2022.108269 (reposiTUm)

375.   Bendra, M., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V. (2022).
The Influence of Interface Effects on the Switching Behavior in Ultra-Scaled MRAM Cells.
Solid-State Electronics, 201, Article 108590. https://doi.org/10.1016/j.sse.2023.108590 (reposiTUm)

374.   Benam, M., Ballicchia, M., Weinbub, J., Selberherr, S., Nedjalkov, M. (2021).
A Computational Approach for Investigating Coulomb Interaction Using Wigner-Poisson Coupling.
Journal of Computational Electronics, 20(2), 775–784. https://doi.org/10.1007/s10825-020-01643-x (reposiTUm)

373.   Fiorentini, S., Ender, J., Selberherr, S., de Orio, R. L., Goes, W., Sverdlov, V. (2021).
Coupled Spin and Charge Drift-Diffusion Approach Applied to Magnetic Tunnel Junctions.
Solid-State Electronics, 186(108103), 108103. https://doi.org/10.1016/j.sse.2021.108103 (reposiTUm)

372.   Ender, J., Fiorentini, S., De Orio, R. L., Goes, W., Sverdlov, V., Selberherr, S. (2021).
Emerging CMOS Compatible Magnetic Memories and Logic.
IEEE Journal of the Electron Devices Society, 9, 456–463. https://doi.org/10.1109/jeds.2021.3066679 (reposiTUm)

371.   Klemenschits, X., Selberherr, S., Filipovic, L. (2021).
Geometric Advection and Its Application in the Emulation of High Aspect Ratio Structures.
Computer Methods in Applied Mechanics and Engineering, 386(114196), 114196. https://doi.org/10.1016/j.cma.2021.114196 (reposiTUm)

370.   Ender, J., de Orio, R. L., Fiorentini, S., Selberherr, S., Goes, W., Sverdlov, V. (2021).
Improving Failure Rates in Pulsed SOT-MRAM Switching by Reinforcement Learning.
Microelectronics Reliability, 126(114231), 114231. https://doi.org/10.1016/j.microrel.2021.114231 (reposiTUm)

369.   Ender, J., Lacerda de Orio, R., Fiorentini, S., Selberherr, S., Goes, W., Sverdlov, V. (2021).
Improving Failure Rates in Pulsed SOT-MRAM Switching by Reinforcement Learning.
Microelectronics Reliability, 126, 1–5. https://doi.org/10.1016/j.microrel.2021.114231 (reposiTUm)

368.   Filipovic, L., Selberherr, S. (2021).
Microstructure and Granularity Effects in Electromigration.
IEEE Journal of the Electron Devices Society, 9, 476–483. https://doi.org/10.1109/jeds.2020.3044112 (reposiTUm)

367.   de Orio, R. L., Ender, J., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V. (2021).
Numerical Analysis of Deterministic Switching of a Perpendicularly Magnetized Spin-Orbit Torque Memory Cell.
IEEE Journal of the Electron Devices Society, 9, 61–67. https://doi.org/10.1109/jeds.2020.3039544 (reposiTUm)

366.   de Orio, R. L., Ender, J., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V. (2021).
Optimization of a Spin-Orbit Torque Switching Scheme Based on Micromagnetic Simulations and Reinforcement Learning.
Micromachines, 12(4), 443. https://doi.org/10.3390/mi12040443 (reposiTUm)

365.   Ceric, H., Selberherr, S., Zahedmanesh, H., de Orio, R. L., Croes, K. (2021).
Review - Modeling Methods for Analysis of Electromigration Degradation in Nano-Interconnects.
ECS Journal of Solid State Science and Technology, 10(3), 035003. https://doi.org/10.1149/2162-8777/abe7a9 (reposiTUm)

364.   Sverdlov, V., El-Sayed, A.-M. B., Seiler, H., Kosina, H., Selberherr, S. (2021).
Subbands in a Nanoribbon of Topologically Insulating MoS₂ in the 1T′ Phase.
Solid-State Electronics, 184(108081), 108081. https://doi.org/10.1016/j.sse.2021.108081 (reposiTUm)

363.   de Orio, R. L., Ender, J., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V. (2021).
Two-Pulse Switching Scheme and Reinforcement Learning for Energy Efficient SOT-MRAM Simulations.
Solid-State Electronics, 185(108075), 108075. https://doi.org/10.1016/j.sse.2021.108075 (reposiTUm)

362.   Fiorentini, S., de Orio, R. L., Selberherr, S., Ender, J., Goes, W., Sverdlov, V. (2020).
Analysis of Switching Under Fixed Voltage and Fixed Current in Perpendicular STT-MRAM.
IEEE Journal of the Electron Devices Society, 8, 1249–1256. https://doi.org/10.1109/jeds.2020.3023577 (reposiTUm)

361.   Sverdlov, V., El-Sayed, E. A.-M., Kosina, H., Selberherr, S. (2020).
Ballistic Conductance in a Topological 1T ’-MoS₂ Nanoribbon.
Semiconductors, 54(12), 1713–1715. https://doi.org/10.1134/s1063782620120386 (reposiTUm)

360.   Ferry, D. K., Nedjalkov, M., Weinbub, J., Ballicchia, M., Welland, I., Selberherr, S. (2020).
Complex Systems in Phase Space.
Entropy, 22(10), 1103. https://doi.org/10.3390/e22101103 (reposiTUm)

359.   Sverdlov, V., El-Sayed, A.-M. B., Kosina, H., Selberherr, S. (2020).
Conductance in a Nanoribbon of Topologically Insulating MoS₂ in the 1T’ Phase.
IEEE Transactions on Electron Devices, 67(11), 4687–4690. https://doi.org/10.1109/ted.2020.3023921 (reposiTUm)

358.   de Orio, R. L., Makarov, A., Selberherr, S., Goes, W., Ender, J., Fiorentini, S., Sverdlov, V. (2020).
Robust Magnetic Field-Free Switching of a Perpendicularly Magnetized Free Layer for SOT-MRAM.
Solid-State Electronics, 168(107730), 107730. https://doi.org/10.1016/j.sse.2019.107730 (reposiTUm)

357.   Toifl, A., Quell, M., Klemenschits, X., Manstetten, P., Hössinger, A., Selberherr, S., Weinbub, J. (2020).
The Level-Set Method for Multi-Material Wet Etching and Non-Planar Selective Epitaxy.
IEEE Access, 8, 115406–115422. https://doi.org/10.1109/access.2020.3004136 (reposiTUm)

356.   Diamantopoulos, G., Hössinger, A., Selberherr, S., Weinbub, J. (2019).
A Shared Memory Parallel Multi-Mesh Fast Marching Method for Re-Distancing.
Advances in Computational Mathematics, 45(4), 2029–2045. https://doi.org/10.1007/s10444-019-09683-z (reposiTUm)

355.   Sverdlov, V., Selberherr, S. (2019).
Current and Shot Noise at Spin-Dependent Hopping Through Junctions With Ferromagnetic Contacts.
Solid-State Electronics, 159, 43–50. https://doi.org/10.1016/j.sse.2019.03.053 (reposiTUm)

354.   Lahlalia, A., Le Neel, O., Shankar, R., Selberherr, S., Filipovic, L. (2019).
Improved Sensing Capability of Integrated Semiconducting Metal Oxide Gas Sensor Devices.
Sensors, 19(2), 374. https://doi.org/10.3390/s19020374 (reposiTUm)

353.   Medina-Bailon, C., Sadi, T., Nedjalkov, M., Carillo-Nunez, H., Lee, J., Badami, O., Georgiev, V., Selberherr, S., Asenov, A. (2019).
Mobility of Circular and Elliptical Si Nanowire Transistors Using a Multi-Subband 1D Formalism.
IEEE Electron Device Letters, 40(10), 1571–1574. https://doi.org/10.1109/led.2019.2934349 (reposiTUm)

352.   Toifl, A., Simonka, V., Hössinger, A., Selberherr, S., Grasser, T., Weinbub, J. (2019).
Simulation of the Effects of Postimplantation Annealing on Silicon Carbide DMOSFET Characteristics.
IEEE Transactions on Electron Devices, 66(7), 3060–3065. https://doi.org/10.1109/ted.2019.2916929 (reposiTUm)

351.   Sadi, T., Medina-Bailon, C., Nedjalkov, M., Lee, J., Badami, O., Berrada, S., Carillo-Nunez, H., Georgiev, V., Selberherr, S., Asenov, A. (2019).
Simulation of the Impact of Ionized Impurity Scattering on the Total Mobility in Si Nanowire Transistors.
Materials, 12(1), 124. https://doi.org/10.3390/ma12010124 (reposiTUm)

350.   Woerle, J., Šimonka, V., Müller, E., Hössinger, A., Sigg, H., Selberherr, S., Weinbub, J., Camarda, M., Grossner, U. (2019).
Surface Morphology of 4h-SiC After Thermal Oxidation.
Materials Science Forum, 963, 180–183. https://doi.org/10.4028/www.scientific.net/msf.963.180 (reposiTUm)

349.   Filipovic, L., Selberherr, S. (2019).
Thermo-Electro-Mechanical Simulation of Semiconductor Metal Oxide Gas Sensors.
Materials, 12(15), 2410. https://doi.org/10.3390/ma12152410 (reposiTUm)

348.   Sverdlov, V., Makarov, A., Selberherr, S. (2019).
Two-Pulse Sub-Ns Switching Scheme for Advanced Spin-Orbit Torque MRAM.
Solid-State Electronics, 155, 49–56. https://doi.org/10.1016/j.sse.2019.03.010 (reposiTUm)

347.   Nedjalkov, M., Weinbub, J., Ballicchia, M., Selberherr, S., Dimov, I., Ferry, D. K. (2019).
Wigner Equation for General Electromagnetic Fields: The Weyl-Stratonovich Transform.
Physical Review B, 99(014423). https://doi.org/10.1103/physrevb.99.014423 (reposiTUm)

346.   Gnam, L., Manstetten, P., Hössinger, A., Selberherr, S., Weinbub, J. (2018).
Accelerating Flux Calculations Using Sparse Sampling.
Micromachines, 9(11), 1–18. https://doi.org/10.3390/mi9110550 (reposiTUm)

345.   Sverdlov, V., Selberherr, S. (2018).
Demands for Spin-Based Nonvolatility in Emerging Digital Logic and Memory Devices for Low Power Computing.
Facta Universitatis. Series Electronics and Energetics, 31(4), 529–545. https://doi.org/10.2298/fuee1804529s (reposiTUm)

344.   Simonka, V., Hössinger, A., Weinbub, J., Selberherr, S. (2018).
Empirical Model for Electrical Activation of Aluminum- And Boron-Implanted Silicon Carbide.
IEEE Transactions on Electron Devices, 65(2), 674–679. https://doi.org/10.1109/ted.2017.2786086 (reposiTUm)

343.   Šimonka, V., Hössinger, A., Weinbub, J., Selberherr, S. (2018).
Modeling and Simulation of Electrical Activation of Acceptor-Type Dopants in Silicon Carbide.
Materials Science Forum, 924, 192–195. https://doi.org/10.4028/www.scientific.net/msf.924.192 (reposiTUm)

342.   Lahlalia, A., Filipovic, L., Selberherr, S. (2018).
Modeling and Simulation of Novel Semiconducting Metal Oxide Gas Sensors for Wearable Devices.
IEEE Sensors Journal, 18(5), 1960–1970. https://doi.org/10.1109/jsen.2018.2790001 (reposiTUm)

341.   Klemenschits, X., Selberherr, S., Filipovic, L. (2018).
Modeling of Gate Stack Patterning for Advanced Technology Nodes: A Review.
Micromachines, 9(12), 631. https://doi.org/10.3390/mi9120631 (reposiTUm)

340.   Sverdlov, V., Makarov, A., Selberherr, S. (2018).
Reliable Sub-Nanosecond Switching of a Perpendicular SOT-MRAM Cell Without External Magnetic Field.
Journal on Systemics, Cybernetics and Informatics, 16(2), 55–59. (reposiTUm)

339.   Meller, G., Selberherr, S. (2018).
Simulation of Injection Currents Into Disordered Molecular Conductors.
Materials Today: Proceedings, 5(9), 17472–17477. https://doi.org/10.1016/j.matpr.2018.06.051 (reposiTUm)

338.   Nedjalkov, M., Ellinghaus, P., Weinbub, J., Sadi, T., Asenov, A., Dimov, I., Selberherr, S. (2018).
Stochastic Analysis of Surface Roughness Models in Quantum Wires.
Computer Physics Communications, 228, 30–37. https://doi.org/10.1016/j.cpc.2018.03.010 (reposiTUm)

337.   Šimonka, V., Toifl, A., Hössinger, A., Selberherr, S., Weinbub, J. (2018).
Transient Model for Electrical Activation of Aluminium and Phosphorus-Implanted Silicon Carbide.
Journal of Applied Physics, 123(23), 235701. https://doi.org/10.1063/1.5031185 (reposiTUm)

336.   Ellinghaus, P., Weinbub, J., Nedjalkov, M., Selberherr, S. (2017).
Analysis of Lense-Governed Wigner Signed Particle Quantum Dynamics.
Physica Status Solidi (RRL) - Rapid Research Letters, 11(7), 1700102-1-1700102–1700105. (reposiTUm)

335.   Šimonka, V., Nawratil, G., Hössinger, A., Weinbub, J., Selberherr, S. (2017).
Anisotropic Interpolation Method of Silicon Carbide Oxidation Growth Rates for Three-Dimensional Simulation.
Solid-State Electronics, 128, 135–140. https://doi.org/10.1016/j.sse.2016.10.032 (reposiTUm)

334.   Manstetten, P., Filipovic, L., Hössinger, A., Weinbub, J., Selberherr, S. (2017).
Framework to Model Neutral Particle Flux in Convex High Aspect Ratio Structures Using One-Dimensional Radiosity.
Solid-State Electronics, 128, 141–147. https://doi.org/10.1016/j.sse.2016.10.029 (reposiTUm)

333.   Šimonka, V., Hössinger, A., Weinbub, J., Selberherr, S. (2017).
ReaxFF Reactive Molecular Dynamics Study of Orientation Dependence of Initial Silicon Carbide Oxidation.
The Journal of Physical Chemistry A, 121(46), 8791–8798. https://doi.org/10.1021/acs.jpca.7b08983 (reposiTUm)

332.   Sverdlov, V., Weinbub, J., Selberherr, S. (2017).
Spintronics as a Non-Volatile Complement to Modern Microelectronics.
Informacije Midem - Journal of Microelectronics Electronic Components and Materials, 47(4), 195–210. (reposiTUm)

331.   Manstetten, P., Weinbub, J., Hössinger, A., Selberherr, S. (2017).
Using Temporary Explicit Meshes for Direct Flux Calculation on Implicit Surfaces.
Procedia Computer Science, 108, 245–254. https://doi.org/10.1016/j.procs.2017.05.067 (reposiTUm)

330.   Makarov, A., Windbacher, T., Sverdlov, V., Selberherr, S. (2016).
CMOS-Compatible Spintronic Devices: A Review.
Semiconductor Science and Technology, 31(11), 113006. https://doi.org/10.1088/0268-1242/31/11/113006 (reposiTUm)

329.   Ghosh, J., Osintsev, D., Sverdlov, V., Selberherr, S. (2016).
Enhancement of Electron Spin Relaxation Time in Thin SOI Films by Spin Injection Orientation and Uniaxial Stress.
Journal of Nano Research, 39, 34–42. https://doi.org/10.4028/www.scientific.net/jnanor.39.34 (reposiTUm)

328.   Šimonka, V., Hössinger, A., Weinbub, J., Selberherr, S. (2016).
Growth Rates of Dry Thermal Oxidation of 4h-Silicon Carbide.
Journal of Applied Physics, 120(13), 135705. https://doi.org/10.1063/1.4964688 (reposiTUm)

327.   Filipovic, L., Selberherr, S. (2016).
Stress Considerations for System-On-Chip Gas Sensor Integration in CMOS Technology.
IEEE Transactions on Device and Materials Reliability, 16(4), 483–495. https://doi.org/10.1109/tdmr.2016.2625461 (reposiTUm)

326.   Papaleo, S., Zisser, W. H., Singulani, A. P., Ceric, H., Selberherr, S. (2016).
Stress Evolution During Nanoindentation in Open TSVs.
IEEE Transactions on Device and Materials Reliability, 16(4), 470–474. https://doi.org/10.1109/tdmr.2016.2622727 (reposiTUm)

325.   Filipovic, L., Selberherr, S. (2016).
Stress in Three-Dimensionally Integrated Sensor Systems.
Microelectronics Reliability, 61, 3–10. https://doi.org/10.1016/j.microrel.2015.09.013 (reposiTUm)

324.   Rupp, K., Tillet, P., Rudolf, F., Weinbub, J., Morhammer, A., Grasser, T., Jüngel, A., Selberherr, S. (2016).
ViennaCL---Linear Algebra Library for Multi- And Many-Core Architectures.
SIAM Journal on Scientific Computing, 38(5), S412–S439. https://doi.org/10.1137/15m1026419 (reposiTUm)

323.   Sellier, J. M., Nedjalkov, M., Dimov, I., Selberherr, S. (2015).
A Comparison of Approaches for the Solution of the Wigner Equation.
Mathematics and Computers in Simulation, 107, 108–119. https://doi.org/10.1016/j.matcom.2014.06.001 (reposiTUm)

322.   Dimov, I., Nedjalkov, M., Sellier, J.-M., Selberherr, S. (2015).
Boundary Conditions and the Wigner Equation Solution.
Journal of Computational Electronics, 14(4), 859–863. https://doi.org/10.1007/s10825-015-0720-2 (reposiTUm)

321.   Baer, E., Evanschitzky, P., Lorenz, J., Roger, F., Minixhofer, R., Filipovic, L., de Orio, R. L., Selberherr, S. (2015).
Coupled Simulation to Determine the Impact of Across Wafer Variations in Oxide PECVD on Electrical and Reliability Parameters of Through-Silicon Vias.
Microelectronic Engineering, 137, 141–145. https://doi.org/10.1016/j.mee.2014.11.014 (reposiTUm)

320.   Ellinghaus, P., Weinbub, J., Nedjalkov, M., Selberherr, S., Dimov, I. (2015).
Distributed-Memory Parallelization of the Wigner Monte Carlo Method Using Spatial Domain Decomposition.
Journal of Computational Electronics, 14(1), 151–162. https://doi.org/10.1007/s10825-014-0635-3 (reposiTUm)

319.   Osintsev, D., Sverdlov, V., Selberherr, S. (2015).
Electron Mobility and Spin Lifetime Enhancement in Strained Ultra-Thin Silicon Films.
Solid-State Electronics, 112, 46–50. https://doi.org/10.1016/j.sse.2015.02.007 (reposiTUm)

318.   Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S. (2015).
Influence of Magnetization Variations in the Free Layer on a Non-Volatile Magnetic Flip Flop.
Solid-State Electronics, 108, 2–7. https://doi.org/10.1016/j.sse.2014.12.023 (reposiTUm)

317.   Ghosh, J., Osintsev, D., Sverdlov, V., Selberherr, S. (2015).
Intersubband Spin Relaxation Reduction and Spin Lifetime Enhancement by Strain in SOI Structures.
Microelectronic Engineering, 147, 89–91. https://doi.org/10.1016/j.mee.2015.04.072 (reposiTUm)

316.   Filipovic, L., Singulani, A. P., Roger, F., Carniello, S., Selberherr, S. (2015).
Intrinsic Stress Analysis of Tungsten-Lined Open TSVs.
Microelectronics Reliability, 55(9–10), 1843–1848. https://doi.org/10.1016/j.microrel.2015.06.014 (reposiTUm)

315.   Axelevitch, A., Palankovski, V., Selberherr, S., Golan, G. (2015).
Investigation of Novel Silicon PV Cells of a Lateral Type.
Silicon, 7(3), 283–291. https://doi.org/10.1007/s12633-014-9227-x (reposiTUm)

314.   Windbacher, T., Ghosh, J., Makarov, A., Sverdlov, V., Selberherr, S. (2015).
Modelling of Multipurpose Spintronic Devices.
International Journal of Nanotechnology, 12(3/4), 313. https://doi.org/10.1504/ijnt.2015.067215 (reposiTUm)

313.   Filipovic, L., Selberherr, S. (2015).
Performance and Stress Analysis of Metal Oxide Films for CMOS-Integrated Gas Sensors.
Sensors, 15(4), 7206–7227. https://doi.org/10.3390/s150407206 (reposiTUm)

312.   Sverdlov, V., Selberherr, S. (2015).
Silicon Spintronics: Progress and Challenges.
Physics Reports, 585, 1–40. https://doi.org/10.1016/j.physrep.2015.05.002 (reposiTUm)

311.   Nedjalkov, M., Weinbub, J., Ellinghaus, P., Selberherr, S. (2015).
The Wigner Equation in the Presence of Electromagnetic Potentials.
Journal of Computational Electronics, 14(4), 888–893. https://doi.org/10.1007/s10825-015-0732-y (reposiTUm)

310.   Rudolf, F., Rupp, K., Weinbub, J., Morhammer, A., Selberherr, S. (2015).
Transformation Invariant Local Element Size Specification.
Applied Mathematics and Computation, 267, 195–206. https://doi.org/10.1016/j.amc.2015.04.027 (reposiTUm)

309.   Weinbub, J., Wastl, M., Rupp, K., Rudolf, F., Selberherr, S. (2015).
ViennaMaterials - A Dedicated Material Library for Computational Science and Engineering.
Applied Mathematics and Computation, 267, 282–293. https://doi.org/10.1016/j.amc.2015.03.094 (reposiTUm)

308.   Sellier, J. M., Nedjalkov, M., Dimov, I., Selberherr, S. (2014).
A Benchmark Study of the Wigner Monte Carlo Method.
Monte Carlo Methods and Applications, 20(1). https://doi.org/10.1515/mcma-2013-0018 (reposiTUm)

307.   Osintsev, D., Sverdlov, V., Selberherr, S. (2014).
Acoustic Phonon and Surface Roughness Spin Relaxation Mechanisms in Strained Ultra-Scaled Silicon Films.
Advanced Materials Research, 854, 29–34. https://doi.org/10.4028/www.scientific.net/amr.854.29 (reposiTUm)

306.   Zisser, W. H., Ceric, H., Weinbub, J., Selberherr, S. (2014).
Electromigration Reliability of Open TSV Structures.
Microelectronics Reliability, 54(9–10), 2133–2137. https://doi.org/10.1016/j.microrel.2014.07.099 (reposiTUm)

305.   Sellier, J. M., Amoroso, S. M., Nedjalkov, M., Selberherr, S., Asenov, A., Dimov, I. (2014).
Electron Dynamics in Nanoscale Transistors by Means of Wigner and Boltzmann Approaches.
Physica A: Statistical Mechanics and Its Applications, 398, 194–198. https://doi.org/10.1016/j.physa.2013.12.045 (reposiTUm)

304.   Weinbub, J., Rupp, K., Selberherr, S. (2014).
Highly Flexible and Reusable Finite Element Simulations With ViennaX.
Journal of Computational and Applied Mathematics, 270, 484–495. https://doi.org/10.1016/j.cam.2013.12.013 (reposiTUm)

303.   Filipovic, L., Selberherr, S., Mutinati, G. C., Brunet, E., Steinhauer, S., Köck, A., Teva, J., Kraft, J., Siegert, J., Schrank, F. (2014).
Methods of Simulating Thin Film Deposition Using Spray Pyrolysis Techniques.
Microelectronic Engineering, 117, 57–66. https://doi.org/10.1016/j.mee.2013.12.025 (reposiTUm)

302.   Ceric, H., Orio, R., Zisser, W., Selberherr, S. (2014).
Microstructural Impact on Electromigration: A TCAD Study.
Facta Universitatis - Series: Electronics and Energetics, 27(1), 1–11. https://doi.org/10.2298/fuee1401001c (reposiTUm)

301.   Filipovic, L., Selberherr, S., Mutinati, G. C., Brunet, E., Steinhauer, S., Köck, A., Teva, J., Kraft, J., Siegert, J., Schrank, F., Gspan, C., Grogger, W. (2014).
Modeling the Growth of Tin Dioxide Using Spray Pyrolysis Deposition for Gas Sensor Applications.
IEEE Transactions on Semiconductor Manufacturing, 27(2), 269–277. https://doi.org/10.1109/tsm.2014.2298883 (reposiTUm)

300.   Windbacher, T., Makarov, A., Mahmoudi, H., Sverdlov, V., Selberherr, S. (2014).
Novel Bias-Field-Free Spin Transfer Oscillator.
Journal of Applied Physics, 115(17), 17C901. https://doi.org/10.1063/1.4862936 (reposiTUm)

299.   Makarov, A., Sverdlov, V., Selberherr, S. (2014).
Progress in Magnetoresistive Memory: Magnetic Tunnel Junctions With a Composite Free Layer.
International Journal of High Speed Electronics and Systems, 23(03n04), 1450014. https://doi.org/10.1142/s0129156414500141 (reposiTUm)

298.   Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S. (2014).
Reliability-Based Optimization of Spin-Transfer Torque Magnetic Tunnel Junction Implication Logic Gates.
Advanced Materials Research, 854, 89–95. https://doi.org/10.4028/www.scientific.net/amr.854.89 (reposiTUm)

297.   Ghosh, J., Windbacher, T., Sverdlov, V., Selberherr, S. (2014).
Spin Injection in a Semiconductor Through a Space-Charge Layer.
Solid-State Electronics, 101, 116–121. https://doi.org/10.1016/j.sse.2014.06.035 (reposiTUm)

296.   Ghosh, J., Sverdlov, V., Windbacher, T., Selberherr, S. (2014).
Spin Injection and Diffusion in Silicon Based Devices From a Space Charge Layer.
Journal of Applied Physics, 115(17), 17C503. https://doi.org/10.1063/1.4856056 (reposiTUm)

295.   Filipovic, L., Selberherr, S. (2014).
The Effects of Etching and Deposition on the Performance and Stress Evolution of Open Through Silicon Vias.
Microelectronics Reliability, 54(9–10), 1953–1958. https://doi.org/10.1016/j.microrel.2014.07.014 (reposiTUm)

294.   Rudolf, F., Weinbub, J., Rupp, K., Selberherr, S. (2014).
The Meshing Framework ViennaMesh for Finite Element Applications.
Journal of Computational and Applied Mathematics, 270, 166–177. https://doi.org/10.1016/j.cam.2014.02.005 (reposiTUm)

293.   Weinbub, J., Rupp, K., Selberherr, S. (2014).
ViennaX: A Parallel Plugin Execution Framework for Scientific Computing.
Engineering with Computers, 30(4), 651–668. https://doi.org/10.1007/s00366-013-0314-1 (reposiTUm)

292.   Filipovic, L., Selberherr, S. (2013).
A Method for Simulating Atomic Force Microscope Nanolithography in the Level Set Framework.
Microelectronic Engineering, 107, 23–32. https://doi.org/10.1016/j.mee.2013.02.083 (reposiTUm)

291.   Filipovic, L., Selberherr, S., Mutinati, G. C., Brunet, E., Seinhauer, S., Köck, A., Teva, J., Kraft, J., Siegert, J., Schrank, F., Gspan, C., Grogger, W. (2013).
A Method for Simulating Spray Pyrolysis Deposition in the Level Set Framework.
Engineering Letters, 21(4), 224–240. (reposiTUm)

290.   Osintsev, D., Sverdlov, V., Makarov, A., Selberherr, S. (2013).
Current and Conductance Modulation at Elevated Temperature in Silicon and InAs-based Spin Field-Effect Transistors.
Sains Malaysiana, 42(2), 205–211. (reposiTUm)

289.   Schwaha, P., Querlioz, D., Dollfus, P., Saint-Martin, J., Nedjalkov, M., Selberherr, S. (2013).
Decoherence Effects in the Wigner Function Formalism.
Journal of Computational Electronics, 12(3), 388–396. https://doi.org/10.1007/s10825-013-0480-9 (reposiTUm)

288.   Sellier, J. M., Nedjalkov, M., Dimov, I., Selberherr, S. (2013).
Decoherence and Time Reversibility: The Role of Randomness at Interfaces.
Journal of Applied Physics, 114(17), 174902. https://doi.org/10.1063/1.4828736 (reposiTUm)

287.   Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S. (2013).
Implication Logic Gates Using Spin-Transfer-Torque-Operated Magnetic Tunnel Junctions for Intrinsic Logic-In-Memory.
Solid-State Electronics, 84, 191–197. https://doi.org/10.1016/j.sse.2013.02.017 (reposiTUm)

286.   Mahmoudi, H., Sverdlov, V., Selberherr, S. (2013).
Influence of Geometry on the Memristive Behavior of Domain Wall Spintronic Memristors and Its Applications for Measurement.
Journal of Superconductivity and Novel Magnetism, 26(5), 1745–1748. https://doi.org/10.1007/s10948-012-2034-y (reposiTUm)

285.   Windbacher, T., Mahmoudi, H., Makarov, A., Sverdlov, V., Selberherr, S. (2013).
Multiple Purpose Spin Transfer Torque Operated Devices.
Facta Universitatis - Series: Electronics and Energetics, 26(3), 227–238. https://doi.org/10.2298/fuee1303227w (reposiTUm)

284.   Nedjalkov, M., Selberherr, S., Ferry, D. K., Vasileska, D., Dollfus, P., Querlioz, D., Dimov, I., Schwaha, P. (2013).
Physical Scales in the Wigner-Boltzmann Equation.
Annals of Physics, 328, 220–237. https://doi.org/10.1016/j.aop.2012.10.001 (reposiTUm)

283.   Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S. (2013).
Reliability Analysis and Comparison of Implication and Reprogrammable Logic Gates in Magnetic Tunnel Junction Logic Circuits.
IEEE Transactions on Magnetics, 49(12), 5620–5628. https://doi.org/10.1109/tmag.2013.2278683 (reposiTUm)

282.   Windbacher, T., Triebl, O., Osintsev, D., Makarov, A., Sverdlov, V., Selberherr, S. (2013).
Simulation Study of an Electrically Read- And Writable Magnetic Logic Gate.
Microelectronic Engineering, 112, 188–192. https://doi.org/10.1016/j.mee.2012.12.030 (reposiTUm)

281.   Singulani, A. P., Ceric, H., Selberherr, S. (2013).
Stress Evolution in the Metal Layers of TSVs With Bosch Scallops.
Microelectronics Reliability, 53(9–11), 1602–1605. https://doi.org/10.1016/j.microrel.2013.07.132 (reposiTUm)

280.   Osintsev, D., Baumgartner, O., Stanojevic, Z., Sverdlov, V., Selberherr, S. (2013).
Subband Splitting and Surface Roughness Induced Spin Relaxation in (001) Silicon SOI MOSFETs.
Solid-State Electronics, 90, 34–38. https://doi.org/10.1016/j.sse.2013.02.055 (reposiTUm)

279.   Nedjalkov, M., Schwaha, P., Selberherr, S., Sellier, J. M., Vasileska, D. (2013).
Wigner Quasi-Particle Attributes - An Asymptotic Perspective.
Applied Physics Letters, 102(16), 163113. https://doi.org/10.1063/1.4802931 (reposiTUm)

278.   Yazdanpanah, A., Pourfath, M., Fathipour, M., Kosina, H., Selberherr, S. (2012).
A Numerical Study of Line-Edge Roughness Scattering in Graphene Nanoribbons.
IEEE Transactions on Electron Devices, 59(2), 433–440. https://doi.org/10.1109/ted.2011.2173690 (reposiTUm)

277.   de Orio, R. L., Ceric, H., Selberherr, S. (2012).
Electromigration Failure in a Copper Dual-Damascene Structure With a Through Silicon Via.
Microelectronics Reliability, 52(9–10), 1981–1986. https://doi.org/10.1016/j.microrel.2012.07.021 (reposiTUm)

276.   Makarov, A., Sverdlov, V., Selberherr, S. (2012).
Emerging Memory Technologies: Trends, Challenges, and Modeling Methods.
Microelectronics Reliability, 52(4), 628–634. https://doi.org/10.1016/j.microrel.2011.10.020 (reposiTUm)

275.   Makarov, A., Sverdlov, V., Osintsev, D., Selberherr, S. (2012).
Fast Switching in Magnetic Tunnel Junctions With Two Pinned Layers: Micromagnetic Modeling.
IEEE Transactions on Magnetics, 48(4), 1289–1292. https://doi.org/10.1109/tmag.2011.2173565 (reposiTUm)

274.   Ceric, H., de Orio, R. L., Selberherr, S. (2012).
Interconnect Reliability Dependence on Fast Diffusivity Paths.
Microelectronics Reliability, 52(8), 1532–1538. https://doi.org/10.1016/j.microrel.2011.09.035 (reposiTUm)

273.   Vitanov, S., Palankovski, V., Maroldt, S., Quay, R., Murad, S., Rödle, T., Selberherr, S. (2012).
Physics-Based Modeling of GaN HEMTs.
IEEE Transactions on Electron Devices, 59(3), 685–693. https://doi.org/10.1109/ted.2011.2179118 (reposiTUm)

272.   Osintsev, D., Sverdlov, V., Stanojević, Z., Makarov, A., Selberherr, S. (2012).
Temperature Dependence of the Transport Properties of Spin Field-Effect Transistors Built With InAs and Si Channels.
Solid-State Electronics, 71, 25–29. https://doi.org/10.1016/j.sse.2011.10.015 (reposiTUm)

271.   de Orio, R. L., Ceric, H., Selberherr, S. (2011).
A Compact Model for Early Electromigration Failures of Copper Dual-Damascene Interconnects.
Microelectronics Reliability, 51(9–11), 1573–1577. https://doi.org/10.1016/j.microrel.2011.07.049 (reposiTUm)

270.   Goharrizi, A. Y., Pourfath, M., Fathipour, M., Kosina, H., Selberherr, S. (2011).
An Analytical Model for Line-Edge Roughness Limited Mobility of Graphene Nanoribbons.
IEEE Transactions on Electron Devices, 58(11), 3725–3735. https://doi.org/10.1109/ted.2011.2163719 (reposiTUm)

269.   Ceric, H., Selberherr, S. (2011).
Electromigration in Submicron Interconnect Features of Integrated Circuits.
Materials Science and Engineering: R: Reports, 71(5–6), 53–86. https://doi.org/10.1016/j.mser.2010.09.001 (reposiTUm)

268.   Lorenz, J., Bär, E., Clees, T., Jancke, R., Salzig, C., Selberherr, S. (2011).
Hierarchical Simulation of Process Variations and Their Impact on Circuits and Systems: Methodology.
IEEE Transactions on Electron Devices, 58(8), 2218–2226. https://doi.org/10.1109/ted.2011.2150225 (reposiTUm)

267.   Lorenz, J., Bär, E., Clees, T., Evanschitzky, P., Jancke, R., Kampen, C., Paschen, U., Salzig, C., Selberherr, S. (2011).
Hierarchical Simulation of Process Variations and Their Impact on Circuits and Systems: Results.
IEEE Transactions on Electron Devices, 58(8), 2227–2234. https://doi.org/10.1109/ted.2011.2150226 (reposiTUm)

266.   Manavizadeh, N., Raissi, F., Soleimani, E. A., Pourfath, M., Selberherr, S. (2011).
Performance Assessment of Nanoscale Field Effect Diodes.
IEEE Transactions on Electron Devices, 58(8), 2378–2384. https://doi.org/10.1109/ted.2011.2152844 (reposiTUm)

265.   Baumgartner, O., Sverdlov, V., Windbacher, T., Selberherr, S. (2011).
Perspectives of Silicon for Future Spintronic Applications From the Peculiarities of the Subband Structure in Thin Films.
IEEE Transactions on Nanotechnology, 10(4), 737–743. https://doi.org/10.1109/tnano.2010.2074211 (reposiTUm)

264.   Makarov, A., Sverdlov, V., Osintsev, D., Selberherr, S. (2011).
Reduction of Switching Time in Pentalayer Magnetic Tunnel Junctions With a Composite-Free Layer.
Physica Status Solidi (RRL) - Rapid Research Letters, 5(12), 420–422. (reposiTUm)

263.   Makarov, A., Sverdlov, V., Selberherr, S. (2011).
Stochastic Model of the Resistive Switching Mechanism in Bipolar Resistive Random Access Memory: Monte Carlo Simulations.
Journal of Vacuum Science, Technology B, 29(1), 01AD03. https://doi.org/10.1116/1.3521503 (reposiTUm)

262.   Cervenka, J., Kosina, H., Selberherr, S., Zhang, J., Hrauda, N., Stangl, J., Bauer, G., Vastola, G., Marzegalli, A., Montalenti, F., Miglio, L. (2011).
Strained MOSFETs on Ordered SiGe Dots.
Solid-State Electronics, 65–66, 81–87. https://doi.org/10.1016/j.sse.2011.06.041 (reposiTUm)

261.   Rupp, K., Selberherr, S. (2011).
The Economic Limit to Moore’s Law.
IEEE Transactions on Semiconductor Manufacturing, 24(1), 1–4. https://doi.org/10.1109/tsm.2010.2089811 (reposiTUm)

260.   Neophytou, N., Wagner, M., Kosina, H., Selberherr, S. (2010).
Analysis of Thermoelectric Properties of Scaled Silicon Nanowires Using an Atomistic Tight-Binding Model.
Journal of Electronic Materials, 39(9), 1902–1908. https://doi.org/10.1007/s11664-009-1035-5 (reposiTUm)

259.   Windbacher, T., Sverdlov, V., Baumgartner, O., Selberherr, S. (2010).
Electron Subband Structure in Strained Silicon UTB Films From the Hensel-Hasegawa-Nakayama Model - Part 1 Analytical Consideration and Strain-Induced Valley Splitting.
Solid-State Electronics, 54(2), 137–142. https://doi.org/10.1016/j.sse.2009.12.008 (reposiTUm)

258.   Selberherr, S. (2010).
Physically Based Models of Electromigration: From Black’s Equation to Modern TCAD Models.
Microelectronics Reliability, 50(6), 775–789. https://doi.org/10.1016/j.microrel.2010.01.007 (reposiTUm)

257.   Makarov, A., Sverdlov, V., Selberherr, S. (2010).
Stochastic Modeling of Bipolar Resistive Switching in Metal-Oxide Based Memory by Monte Carlo Technique.
Journal of Computational Electronics, 9(3–4), 146–152. https://doi.org/10.1007/s10825-010-0317-8 (reposiTUm)

256.   Rupp, K., Selberherr, S. (2010).
The Economic Limit to Moore’s Law [Point of View]. Proceedings of the IEEE, 98(3), 351–353. https://doi.org/10.1109/jproc.2010.2040205 (reposiTUm)


255.   Ertl, O., Selberherr, S. (2010).
Three-Dimensional Level Set Based Bosch Process Simulations Using Ray Tracing for Flux Calculation.
Microelectronic Engineering, 87(1), 20–29. https://doi.org/10.1016/j.mee.2009.05.011 (reposiTUm)

254.   Ceric, H., de Orio, R. L., Cervenka, J., Selberherr, S. (2009).
A Comprehensive TCAD Approach for Assessing Electromigration Reliability of Modern Interconnects.
IEEE Transactions on Device and Materials Reliability, 9(1), 9–19. https://doi.org/10.1109/tdmr.2008.2000893 (reposiTUm)

253.   Ertl, O., Selberherr, S. (2009).
A Fast Level Set Framework for Large Three-Dimensional Topography Simulations.
Computer Physics Communications, 180(8), 1242–1250. https://doi.org/10.1016/j.cpc.2009.02.002 (reposiTUm)

252.   De Orio, R. L., Ceric, H., Selberherr, S. (2009).
Analysis of Electromigration in Dual-Damascene Interconnect Structures.
Journal of Integrated Circuits and Systems, 4(2), 67–72. https://doi.org/10.29292/jics.v4i2.300 (reposiTUm)

251.   Poschalko, C., Selberherr, S. (2009).
Cavity Model for the Slot Radiation of an Enclosure Excited by Printed Circuit Board Traces With Different Loads.
IEEE Transactions on Electromagnetic Compatibility, 51(1), 18–24. https://doi.org/10.1109/temc.2008.2008815 (reposiTUm)

250.   Heinzl, R., Schwaha, P., Stimpfl, F., Selberherr, S. (2009).
GUIDE: Parallel Library-Centric Application Design by a Generic Scientific Simulation Environment.
International Journal of Parallel, Emergent and Distributed Systems, 24(6), 505–520. https://doi.org/10.1080/17445760902758545 (reposiTUm)

249.   Sverdlov, V. A., Windbacher, T., Schanovsky, F., Selberherr, S. (2009).
Mobility Modeling in Advanced MOSFETs With Ultra-Thin Silicon Body Under Stress.
Journal of Integrated Circuits and Systems, 4(2), 55–60. https://doi.org/10.29292/jics.v4i2.298 (reposiTUm)

248.   Sverdlov, V., Baumgartner, O., Windbacher, T., Selberherr, S. (2009).
Modeling of Modern MOSFETs With Strain.
Journal of Computational Electronics, 8(3–4), 192–208. https://doi.org/10.1007/s10825-009-0291-1 (reposiTUm)

247.   Schwaha, P., Heinzl, R., Stimpfl, F., Selberherr, S. (2009).
Synergies in Scientific Computing by Combining Multi-Paradigmatic Languages for High-Performance Applications.
International Journal of Parallel, Emergent and Distributed Systems, 24(6), 539–549. https://doi.org/10.1080/17445760902758552 (reposiTUm)

246.   Sverdlov, V., Ungersboeck, E., Kosina, H., Selberherr, S. (2008).
Current Transport Models for Nanoscale Semiconductor Devices.
Materials Science and Engineering: R: Reports, 58(6), 228–270. https://doi.org/10.1016/j.mser.2007.11.001 (reposiTUm)

245.   Lacerda de Orio, R., Ceric, H., Selberherr, S. (2008).
Effect of Strains on Anisotropic Material Transport in Copper Interconnect Structures Under Electromigration Stress.
Journal of Computational Electronics, 7(3), 128–131. https://doi.org/10.1007/s10825-008-0211-9 (reposiTUm)

244.   Sverdlov, V., Kosina, H., Selberherr, S. (2008).
Electron Subband Dispersions in Ultra-Thin Silicon Films From a Two-Band K·p Theory.
Journal of Computational Electronics, 7(3), 164–167. https://doi.org/10.1007/s10825-008-0177-7 (reposiTUm)

243.   Sverdlov, V., Selberherr, S. (2008).
Electron Subband Structure and Controlled Valley Splitting in Silicon Thin-Body SOI FETs: Two-Band k.p Theory and Beyond.
Solid-State Electronics, 52(12), 1861–1866. https://doi.org/10.1016/j.sse.2008.06.054 (reposiTUm)

242.   Pourfath, M., Kosina, H., Selberherr, S. (2008).
Numerical Study of Quantum Transport in Carbon Nanotube Transistors.
Mathematics and Computers in Simulation, 79(4), 1051–1059. https://doi.org/10.1016/j.matcom.2007.09.004 (reposiTUm)

241.   Pourfath, M., Kosina, H., Selberherr, S. (2008).
The Effect of Inelastic Phonon Scattering on Carbon Nanotube-Based Transistor Performance.
Journal of Physics: Conference Series, 109, 012029. https://doi.org/10.1088/1742-6596/109/1/012029 (reposiTUm)

240.   Ungersboeck, E., Gös, W., Dhar, S., Kosina, H., Selberherr, S. (2008).
The Effect of Uniaxial Stress on Band Structure and Electron Mobility of Silicon.
Mathematics and Computers in Simulation, 79(4), 1071–1077. https://doi.org/10.1016/j.matcom.2007.10.004 (reposiTUm)

239.   Cervenka, J., Ceric, H., Selberherr, S. (2008).
Three-Dimensional Simulation of Sacrificial Etching.
Microsystem Technologies, 14(4–5), 665–671. https://doi.org/10.1007/s00542-007-0491-1 (reposiTUm)

238.   Sverdlov, V., Karlowatz, G., Dhar, S., Kosina, H., Selberherr, S. (2008).
Two-Band k.p Model for the Conduction Band in Silicon: Impact of Strain and Confinement on Band Structure and Mobility.
Solid-State Electronics, 52(10), 1563–1568. https://doi.org/10.1016/j.sse.2008.06.019 (reposiTUm)

237.   Karner, M., Gehring, A., Holzer, S., Pourfath, M., Wagner, M., Goes, W., Vasicek, M., Baumgartner, O., Kernstock, C., Schnass, K., Zeiler, G., Grasser, T., Kosina, H., Selberherr, S. (2007).
A Multi-Purpose Schrödinger-Poisson Solver for TCAD Applications.
Journal of Computational Electronics, 6(1–3), 179–182. https://doi.org/10.1007/s10825-006-0077-7 (reposiTUm)

236.   Wittmann, R., Selberherr, S. (2007).
A Study of Ion Implantation Into Crystalline Germanium.
Solid-State Electronics, 51(6), 982–988. https://doi.org/10.1016/j.sse.2007.03.019 (reposiTUm)

235.   Movahhedi, M., Abdipour, A., Nentchev, A., Dehghan, M., Selberherr, S. (2007).
Alternating-Direction Implicit Formulation of the Finite-Element Time-Domain Method.
IEEE Transactions on Microwave Theory and Techniques, 55(6), 1322–1331. https://doi.org/10.1109/tmtt.2007.897777 (reposiTUm)

234.   Holzer, S., Sheikholeslami, A., Karner, M., Grasser, T., Selberherr, S. (2007).
Comparison of Deposition Models for a TEOS LPCVD Process.
Microelectronics Reliability, 47(4–5), 623–625. https://doi.org/10.1016/j.microrel.2007.01.058 (reposiTUm)

233.   Pourfath, M., Kosina, H., Selberherr, S. (2007).
Dissipative Transport in CNTFETs.
Journal of Computational Electronics, 6(1–3), 321–324. https://doi.org/10.1007/s10825-006-0113-7 (reposiTUm)

232.   Dhar, S., Ungersböck, S. E., Kosina, H., Grasser, T., Selberherr, S. (2007).
Electron Mobility Model for 〈110〉 Stressed Silicon Including Strain-Dependent Mass.
IEEE Transactions on Nanotechnology, 6(1), 97–100. https://doi.org/10.1109/tnano.2006.888533 (reposiTUm)

231.   Heitzinger, C., Ringhofer, C., Selberherr, S. (2007).
Finite Difference Solutions of the Nonlinear Schrödinger Equation and Their Conservation of Physical Quantities.
Communications in Mathematical Sciences, 5(4), 779–788. https://doi.org/10.4310/cms.2007.v5.n4.a2 (reposiTUm)

230.   Pourfath, M., Kosina, H., Selberherr, S. (2007).
Geometry Optimization for Carbon Nanotube Transistors.
Solid-State Electronics, 51(11–12), 1565–1571. https://doi.org/10.1016/j.sse.2007.09.021 (reposiTUm)

229.   Krishnamohan, T., Jungemann, C., Kim, D., Ungersboeck, E., Selberherr, S., Pham, A.-T., Meinerzhagen, B., Wong, P., Nishi, Y., Saraswat, K. C. (2007).
High Performance, Uniaxially-Strained, Silicon and Germanium, Double-Gate P-MOSFETs.
Microelectronic Engineering, 84(9–10), 2063–2066. https://doi.org/10.1016/j.mee.2007.04.085 (reposiTUm)

228.   Grasser, T., Selberherr, S. (2007).
Modeling of Negative Bias Temperature Instability.
Journal of Telecommunications and Information Technology, 7(2), 92–102. (reposiTUm)

227.   Movahhedi, M., Abdipour, A., Ceric, H., Sheikholeslami, A., Selberherr, S. (2007).
Optimization of the Perfectly Matched Layer for the Finite-Element Time-Domain Method.
IEEE Microwave and Wireless Components Letters, 17(1), 10–12. https://doi.org/10.1109/lmwc.2006.887240 (reposiTUm)

226.   Ungersboeck, E., Dhar, S., Karlowatz, G., Kosina, H., Selberherr, S. (2007).
Physical Modeling of Electron Mobility Enhancement for Arbitrarily Strained Silicon.
Journal of Computational Electronics, 6(1–3), 55–58. https://doi.org/10.1007/s10825-006-0047-0 (reposiTUm)

225.   Sheikholeslami, A., Parhami, F., Puchner, H., Selberherr, S. (2007).
Planarization of Silicon Dioxide and Silicon Nitride Passivation Layers.
Journal of Physics: Conference Series, 61, 1051–1055. https://doi.org/10.1088/1742-6596/61/1/208 (reposiTUm)

224.   Ungersboeck, E., Dhar, S., Karlowatz, G., Sverdlov, V., Kosina, H., Selberherr, S. (2007).
The Effect of General Strain on the Band Structure and Electron Mobility of Silicon.
IEEE Transactions on Electron Devices, 54(9), 2183–2190. https://doi.org/10.1109/ted.2007.902880 (reposiTUm)

223.   Pourfath, M., Kosina, H., Selberherr, S. (2007).
Tunneling CNTFETs.
Journal of Computational Electronics, 6(1–3), 243–246. https://doi.org/10.1007/s10825-006-0099-1 (reposiTUm)

222.   Karner, M., Gehring, A., Wagner, M., Entner, R., Holzer, S., Goes, W., Vasicek, M., Grasser, T., Kosina, H., Selberherr, S. (2007).
VSP - A Gate Stack Analyzer.
Microelectronics Reliability, 47(4–5), 704–708. https://doi.org/10.1016/j.microrel.2007.01.059 (reposiTUm)

221.   Sverdlov, V., Ungersboeck, E., Kosina, H., Selberherr, S. (2007).
Volume Inversion Mobility in SOI MOSFETs for Different Thin Body Orientations.
Solid-State Electronics, 51(2), 299–305. https://doi.org/10.1016/j.sse.2007.01.022 (reposiTUm)

220.   Pourfath, M., Kosina, H., Selberherr, S. (2006).
A Fast and Stable Poisson-Schrödinger Solver for the Analysis of Carbon Nanotube Transistors.
Journal of Computational Electronics, 5(2–3), 155–159. https://doi.org/10.1007/s10825-006-8836-z (reposiTUm)

219.   Wessner, W., Cervenka, J., Heitzinger, C., Hossinger, A., Selberherr, S. (2006).
Anisotropic Mesh Refinement for the Simulation of Three-Dimensional Semiconductor Manufacturing Processes.
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 25(10), 2129–2139. https://doi.org/10.1109/tcad.2005.862750 (reposiTUm)

218.   Kosina, H., Selberherr, S. (2006).
Device Simulation Demands of Upcoming Microelectronic Devices.
International Journal of High Speed Electronics and Systems, 16(01), 115–136. https://doi.org/10.1142/s0129156406003576 (reposiTUm)

217.   Cervenka, J., Wessner, W., Al-Ani, E., Grasser, T., Selberherr, S. (2006).
Generation of Unstructured Meshes for Process and Device Simulation by Means of Partial Differential Equations.
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 25(10), 2118–2128. https://doi.org/10.1109/tcad.2006.876514 (reposiTUm)

216.   Dhar, S., Kosina, H., Karlowatz, G., Ungersboeck, S. E., Grasser, T., Selberherr, S. (2006).
High-Field Electron Mobility Model for Strained-Silicon Devices.
IEEE Transactions on Electron Devices, 53(12), 3054–3062. https://doi.org/10.1109/ted.2006.885639 (reposiTUm)

215.   Sverdlov, V., Kosina, H., Selberherr, S. (2006).
Modeling Current Transport in Ultra-Scaled Field-Effect Transistors.
Microelectronics Reliability, 47(1), 11–19. https://doi.org/10.1016/j.microrel.2006.03.009 (reposiTUm)

214.   Pourfath, M., Kosina, H., Selberherr, S. (2006).
Rigorous Modeling of Carbon Nanotube Transistors.
Journal of Physics: Conference Series, 38, 29–32. https://doi.org/10.1088/1742-6596/38/1/008 (reposiTUm)

213.   Sverdlov, V., Grasser, T., Kosina, H., Selberherr, S. (2006).
Scattering and Space-Charge Effects in Wigner Monte Carlo Simulations of Single and Double Barrier Devices.
Journal of Computational Electronics, 5(4), 447–450. https://doi.org/10.1007/s10825-006-0041-6 (reposiTUm)

212.   Heitzinger, C., Sheikholeslami, A., Park, J. M., Selberherr, S. (2005).
A Method for Generating Structurally Aligned Grids for Semiconductor Device Simulation.
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 24(10), 1485–1491. https://doi.org/10.1109/tcad.2005.852297 (reposiTUm)

211.   Wagner, S., Grasser, T., Fischer, C., Selberherr, S. (2005).
An Advanced Equation Assembly Module.
Engineering with Computers, 21(2), 151–163. https://doi.org/10.1007/s00366-005-0319-5 (reposiTUm)

210.   Dhar, S., Kosina, H., Palankovski, V., Ungersböck, S. E., Selberherr, S. (2005).
Electron Mobility Model for Strained-Si Devices.
IEEE Transactions on Electron Devices, 52(4), 527–533. https://doi.org/10.1109/ted.2005.844788 (reposiTUm)

209.   Gehring, A., Selberherr, S. (2005).
Gate Current Modeling for MOSFETs.
Journal of Computational and Theoretical Nanoscience, 2(4), 473–491. https://doi.org/10.1166/jctn.2005.002 (reposiTUm)

208.   Ayalew, T., Grasser, T., Kosina, H., Selberherr, S. (2005).
Modeling of Lattice Site-Dependent Incomplete Ionization in α-SiC Devices.
Materials Science Forum, 483–485, 845–848. https://doi.org/10.4028/www.scientific.net/msf.483-485.845 (reposiTUm)

207.   Grasser, T., Kosik, R., Jungemann, C., Kosina, H., Selberherr, S. (2005).
Nonparabolic Macroscopic Transport Models for Device Simulation Based on Bulk Monte Carlo Data.
Journal of Applied Physics, 97(9), 093710. https://doi.org/10.1063/1.1883311 (reposiTUm)

206.   Pourfath, M., Ungersboeck, E., Gehring, A., Kosina, H., Selberherr, S., PARK, W.-J., Cheong, B.-H. (2005).
Numerical Analysis of Coaxial Double Gate Schottky Barrier Carbon Nanotube Field Effect Transistors.
Journal of Computational Electronics, 4(1–2), 75–78. https://doi.org/10.1007/s10825-005-7111-z (reposiTUm)

205.   Ayalew, T., Kim, S. C., Grasser, T., Selberherr, S. (2005).
Numerical Analysis of SiC Merged PiN Schottky Diodes.
Materials Science Forum, 483–485, 949–952. https://doi.org/10.4028/www.scientific.net/msf.483-485.949 (reposiTUm)

204.   Kim, S. C., Bahng, W., Kim, N. K., Kim, E. D., Ayalew, T., Grasser, T., Selberherr, S. (2005).
Numerical Simulation and Optimization for 900V 4h-SiC DiMOSFET Fabrication.
Materials Science Forum, 483–485, 793–796. https://doi.org/10.4028/www.scientific.net/msf.483-485.793 (reposiTUm)

203.   Pourfath, M., Ungersboeck, E., Gehring, A., Cheong, B. H., Park, W. J., Kosina, H., Selberherr, S. (2005).
Optimization of Schottky Barrier Carbon Nanotube Field Effect Transistors.
Microelectronic Engineering, 81(2–4), 428–433. https://doi.org/10.1016/j.mee.2005.03.043 (reposiTUm)

202.   Ungersboeck, E., Pourfath, M., Kosina, H., Gehring, A., Cheong, B.-H., Park, W.-J., Selberherr, S. (2005).
Optimization of Single-Gate Carbon-Nanotube Field-Effect Transistors.
IEEE Transactions on Nanotechnology, 4(5), 533–538. https://doi.org/10.1109/tnano.2005.851402 (reposiTUm)

201.   Sverdlov, V., Gehring, A., Kosina, H., Selberherr, S. (2005).
Quantum Transport in Ultra-Scaled Double-Gate MOSFETs: A Wigner Function-Based Monte Carlo Approach.
Solid-State Electronics, 49(9), 1510–1515. https://doi.org/10.1016/j.sse.2005.07.013 (reposiTUm)

200.   Pourfath, M., Gehring, A., Ungersboeck, E., Kosina, H., Selberherr, S., Cheong, B. H., Park, W. J. (2005).
Separated Carrier Injection Control in Carbon Nanotube Field-Effect Transistors.
Journal of Applied Physics, 97(10), 106103. https://doi.org/10.1063/1.1897491 (reposiTUm)

199.   Grasser, T., Kosik, R., Jungemann, C., Meinerzhagen, B., Kosina, H., Selberherr, S. (2004).
A Non-Parabolic Six Moments Model for the Simulation of Sub-100 Nm Semiconductor Devices.
Journal of Computational Electronics, 3(3–4), 183–187. https://doi.org/10.1007/s10825-004-7041-1 (reposiTUm)

198.  M. Nedjalkov, H. Kosina, E. Ungersböck, S. Selberherr:
"A Quasi-Particle Model of the Electron-Wigner Potential Interaction";
Semiconductor Science and Technology, 19 (2004), 4; 226 - 228. https://doi.org/10.1088/0268-1242/19/4/076

197.  T. Binder, C. Heitzinger, S. Selberherr:
"A Study on Global and Local Optimization Techniques for TCAD Analysis Tasks";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 23 (2004), 6; 814 - 822. https://doi.org/10.1109/TCAD.2004.828130

196.  C. Heitzinger, A. Hössinger, S. Selberherr:
"An Algorithm for Smoothing Three-Dimensional Monte Carlo Ion Implantation Simulation Results";
Mathematics and Computers in Simulation, 66 (2004), 2-3; 219 - 230. https://doi.org/10.1016/j.matcom.2003.11.010

195.  R. Rodriguez-Torres, E. Gutierrez, R. Klima, S. Selberherr:
"Analysis of Split-Drain MAGFETs";
IEEE Transactions on Electron Devices, 51 (2004), 12; 2237 - 2245. https://doi.org/10.1109/TED.2004.839869

194.  V. Palankovski, S. Selberherr:
"Critical Modeling Issues of SiGe Semiconductor Devices";
Journal of Telecommunications and Information Technology (invited), 4 (2004), 1; 15 - 25.

193.  S. Wagner, V. Palankovski, G. Röhrer, T. Grasser, S. Selberherr:
"Direct Extraction Feature for Scattering Parameters of SiGe-HBTs";
Applied Surface Science, 224 (2004), 1-4; 365 - 369. https://doi.org/10.1016/j.apsusc.2003.09.035

192.  T. Ayalew, A. Gehring, T. Grasser, S. Selberherr:
"Enhancement of Breakdown Voltage for Ni-SiC Schottky Diodes Utilizing Field Plate Edge Termination";
Microelectronics Reliability, 44 (2004), 9-11; 1473 - 1478. https://doi.org/10.1016/j.microrel.2004.07.042

191.   Gehring, A., Selberherr, S. (2004).
Evolution of Current Transport Models for Engineering Applications.
Journal of Computational Electronics, 3(3–4), 149–155. https://doi.org/10.1007/s10825-004-7035-z (reposiTUm)

190.  S. Holzer, R. Minixhofer, C. Heitzinger, J. Fellner, T. Grasser, S. Selberherr:
"Extraction of Material Parameters Based on Inverse Modeling of Three-Dimensional Interconnect Fusing Structures";
Microelectronics Journal, 35 (2004), 10; 805 - 810. https://doi.org/10.1016/j.mejo.2004.06.011

189.  C. Heitzinger, A. Sheikholeslami, F. Badrieh, H. Puchner, S. Selberherr:
"Feature-Scale Process Simulation and Accurate Capacitance Extraction for the Backend of a 100-nm Aluminum/TEOS Process";
IEEE Transactions on Electron Devices, 51 (2004), 7; 1129 - 1134. https://doi.org/10.1109/TED.2004.829868

188.  J.M. Park, R. Klima, S. Selberherr:
"High-Voltage Lateral Trench Gate SOI-LDMOSFETs";
Microelectronics Journal, 35 (2004), 3; 299 - 304. https://doi.org/10.1016/S0026-2692(03)00192-7

187.  A. Gehring, S. Selberherr:
"Modeling of Tunneling Current and Gate Dielectric Reliability for Nonvolatile Memory Devices";
IEEE Transactions on Device and Materials Reliability, 4 (2004), 3; 306 - 319. https://doi.org/10.1109/TDMR.2004.836727

186.  J.M. Park, S. Wagner, T. Grasser, S. Selberherr:
"New SOI Lateral Power Devices with Trench Oxide";
Solid-State Electronics, 48 (2004), 6; 1007 - 1015. https://doi.org/10.1016/j.sse.2003.12.015

185.  C. Heitzinger, S. Selberherr:
"On the Simulation of the Formation and Dissolution of Silicon Self-Interstitial Clusters and the Corresponding Inverse Modeling Problem";
Microelectronics Journal, 35 (2004), 2; 167 - 171. https://doi.org/10.1016/j.mejo.2003.09.014

184.  M. Nedjalkov, E. Atanassov, H. Kosina, S. Selberherr:
"Operator-Split Method for Variance Reduction in Stochastic Solutions for the Wigner Equation";
Monte Carlo Methods and Applications, 10 (2004), 3-4; 461 - 468. https://doi.org/10.1515/mcma.2004.10.3-4.461

183.  V. Palankovski, G. Röhrer, T. Grasser, S. Smirnov, H. Kosina, S. Selberherr:
"Rigorous Modeling Approach to Numerical Simulation of SiGe HBTs";
Applied Surface Science, 224 (2004), 1-4; 361 - 364. https://doi.org/10.1016/j.apsusc.2003.09.034

182.  V. Palankovski, S. Selberherr:
"Rigorous Modeling of High-Speed Semiconductor Devices";
Microelectronics Reliability (invited), 44 (2004), 6; 889 - 897. https://doi.org/10.1016/j.microrel.2004.02.009

181.  Ch. Ringhofer, M. Nedjalkov, H. Kosina, S. Selberherr:
"Semiclassical Approximation of Electron-Phonon Scattering Beyond Fermi's Golden Rule";
SIAM Journal on Applied Mathematics, 64 (2004), 6; 1933 - 1953. https://doi.org/10.1137/S0036139903428914

180.  H. Kosina, M Nedjalkov, S. Selberherr:
"Solution of the Space-dependent Wigner Equation Using a Particle Model";
Monte Carlo Methods and Applications, 10 (2004), 3-4; 359 - 368. https://doi.org/10.1515/mcma.2004.10.3-4.359

179.  A. Gehring, S. Selberherr:
"Statistical Simulation of Gate Dielectric Wearout, Leakage, and Breakdown";
Microelectronics Reliability, 44 (2004), 9-11; 1879 - 1884. https://doi.org/10.1016/j.microrel.2004.07.101

178.  V. Palankovski, S. Selberherr:
"The State-of-the-Art in Simulation for Optimization of SiGe-HBTs";
Applied Surface Science, 224 (2004), 1-4; 312 - 319. https://doi.org/10.1016/j.apsusc.2003.09.036

177.  M. Nedjalkov, H. Kosina, S. Selberherr, Ch. Ringhofer, D.K. Ferry:
"Unified Particle Approach to Wigner-Boltzmann Transport in Small Semiconductor Devices";
Physical Review B, 70 (2004), 115319; 1 - 16. https://doi.org/10.1103/PhysRevB.70.115319

176.  H. Kosina, M. Nedjalkov, S. Selberherr:
"A Monte Carlo Method Seamlessly Linking Quantum and Classical Transport Calculations";
Journal of Computational Electronics, 2 (2003), 2-4; 147 - 151. https://doi.org/10.1023/B:JCEL.0000011416.93047.69

175.  J.M. Park, T. Grasser, H. Kosina, S. Selberherr:
"A Numerical Study of Partial-SOI LDMOSFETs";
Solid-State Electronics, 47 (2003), 2; 275 - 281. https://doi.org/10.1016/S0038-1101(02)00207-1

174.  T. Grasser, T.-W. Tang, H. Kosina, S. Selberherr:
"A Review of Hydrodynamic and Energy-Transport Models for Semiconductor Device Simulation";
Proceedings of the IEEE, 91 (2003), 2; 251 - 274. https://doi.org/10.1109/JPROC.2002.808150

173.  H. Ceric, S. Selberherr:
"An Adaptive Grid Approach for the Simulation of Electromigration Induced Void Migration";
IEICE Transactions on Electronics (invited), E86-C (2003), 3; 421 - 426.

172.  H. Kosina, M. Nedjalkov, S. Selberherr:
"An Event Bias Technique for Monte Carlo Device Simulation";
Mathematics and Computers in Simulation, 62 (2003), 3-6; 367 - 375. https://doi.org/10.1016/S0378-4754(02)00245-8

171.  A. Gehring, H. Kosina, S. Selberherr:
"Analysis of Gate Dielectric Stacks Using the Transmitting Boundary Method";
Journal of Computational Electronics, 2 (2003), 2-4; 219 - 223. https://doi.org/10.1023/B:JCEL.0000011428.85286.7d

170.   Harlander, C., Sabelka, R., Selberherr, S. (2003).
Efficient Inductance Calculation in Interconnect Structures by Applying the Monte Carlo Method.
Microelectronics Journal, 34(9), 815–821. https://doi.org/10.1016/s0026-2692(03)00147-2 (reposiTUm)

169.  A. Gehring, T. Grasser, H. Kosina, S. Selberherr:
"Energy Transport Gate Current Model Accounting for Non-Maxwellian Energy Distribution";
Electronics Letters, 39 (2003), 8; 691 - 692. https://doi.org/10.1049/el:20030440

168.  T. Grasser, H. Kosina, S. Selberherr:
"Hot Carrier Effects within Macroscopic Transport Models";
International Journal of High Speed Electronics and Systems, 13 (2003), 3; 873 - 901. https://doi.org/10.1142/S012915640300206X

167.  T. Ayalew, A. Gehring, J.M. Park, T. Grasser, S. Selberherr:
"Improving SiC Lateral DMOSFET Reliability under High Field Stress";
Microelectronics Reliability, 43 (2003), 9-11; 1889 - 1894. https://doi.org/10.1016/S0026-2714(03)00321-4

166.  S. Smirnov, H. Kosina, S. Selberherr:
"Investigation of the Electron Mobility in Strained Si1-x Gex at High Ge Composition";
IEICE Transactions on Electronics, E86-C (2003), 3; 350 - 356.

165.  A. Gehring, F. Jimenez-Molinos, H. Kosina, A. Palma, F. Gamiz, S. Selberherr:
"Modeling of Retention Time Degradation Due to Inelastic Trap-Assisted Tunneling in EEPROM Devices";
Microelectronics Reliability, 43 (2003), 9-11; 1495 - 1500. https://doi.org/10.1016/S0026-2714(03)00265-8

164.  M. Nedjalkov, H. Kosina, S. Selberherr:
"Monte Carlo Algorithms for Stationary Device Simulation";
Mathematics and Computers in Simulation, 62 (2003), 3-6; 453 - 461. https://doi.org/10.1016/S0378-4754(02)00246-X

163.  S. Smirnov, H. Kosina, M. Nedjalkov, S. Selberherr:
"Monte Carlo Method for Modeling of Small Signal Response Including the Pauli Exclusion Principle";
Journal of Applied Physics, 94 (2003), 9; 5791 - 5799. https://doi.org/10.1063/1.1616982

162.  C. Heitzinger, A. Hössinger, S. Selberherr:
"On Smoothing Three-Dimensional Monte Carlo Ion Implantation Simulation Results";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 22 (2003), 7; 879 - 883. https://doi.org/10.1109/TCAD.2003.814259

161.  T. Binder, A. Hössinger, S. Selberherr:
"Rigorous Integration of Semiconductor Process and Device Simulators";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 22 (2003), 9; 1204 - 1214. https://doi.org/10.1109/TCAD.2003.816219

160.  C. Heitzinger, W. Pyka, N. Tamaoki, T. Takase, T. Ohmine, S. Selberherr:
"Simulation of Arsenic In Situ Doping With Polysilicon CVD and Its Application to High Aspect Ratio Trenches";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 22 (2003), 3; 285 - 292. https://doi.org/10.1109/TCAD.2002.807879

159.  A. Sheikholeslami, C. Heitzinger, H. Puchner, F. Badrieh, S. Selberherr:
"Simulation of Void Formation in Interconnect Lines";
Proceedings of SPIE, 5117 (2003), 445 - 452. https://doi.org/10.1117/12.498783

158.  M. Nedjalkov, H. Kosina, S. Selberherr:
"Stochastic Interpretation of the Wigner Transport in Nanostructures";
Microelectronics Journal, 34 (2003), 5-8; 443 - 445. https://doi.org/10.1016/S0026-2692(03)00069-7

157.  H. Kosina, M. Nedjalkov, S. Selberherr:
"The Stationary Monte Carlo Method for Device Simulation. I. Theory";
Journal of Applied Physics, 93 (2003), 6; 3553 - 3563. https://doi.org/10.1063/1.1544654

156.  M. Nedjalkov, H. Kosina, S. Selberherr:
"The Stationary Monte Carlo Method for Device Simulation. II. Event Biasing and Variance Estimation";
Journal of Applied Physics, 93 (2003), 6; 3564 - 3571. https://doi.org/10.1063/1.1544655

155.  J. Cervenka, R. Klima, M. Knaipp, S. Selberherr:
"Three-Dimensional Device Optimization by Green's Functions";
European Physical Journal - Applied Physics, 21 (2003), 103 - 106. https://doi.org/10.1051/epjap:2002121

154.  M. Nedjalkov, H. Kosina, R. Kosik, S. Selberherr:
"A Space Dependent Wigner Equation Including Phonon Interaction";
Journal of Computational Electronics, 1 (2002), 1-2; 27 - 31. https://doi.org/10.1023/A:1020799224110

153.  M. Nedjalkov, H. Kosina, R. Kosik, S. Selberherr:
"A Wigner Equation with Quantum Electron-Phonon Interaction";
Microelectronic Engineering, 63 (2002), 1-3; 199 - 203. https://doi.org/10.1016/S0167-9317(02)00625-1

152.  T. Grasser, H. Kosina, C. Heitzinger, S. Selberherr:
"Accurate Impact Ionization Model which Accounts for Hot and Cold Carrier Populations";
Applied Physics Letters, 80 (2002), 4; 613 - 615. https://doi.org/10.1063/1.1445273

151.  C. Heitzinger, S. Selberherr:
"An Extensible TCAD Optimization Framework Combining Gradient Based and Genetic Optimizers";
Microelectronics Journal, 33 (2002), 1-2; 61 - 68. https://doi.org/10.1016/S0026-2692(01)00105-7

150.  H. Kosina, M. Gritsch, T. Grasser, S. Selberherr, T. Linton, S. Yu, M. Giles:
"An Improved Energy Transport Model Suitable for Simulation of Partially Depleted SOI MOSFETs";
Journal of Computational Electronics, 1 (2002), 3; 371 - 374. https://doi.org/10.1023/A:1020703709031

149.  T. Grasser, H. Kosina, C. Heitzinger, S. Selberherr:
"Characterization of the Hot Electron Distribution Function Using Six Moments";
Journal of Applied Physics, 91 (2002), 6; 3869 - 3879. https://doi.org/10.1063/1.1450257

148.  A. Gehring, T. Grasser, B.-H. Cheong, S. Selberherr:
"Design Optimization of Multi-Barrier Tunneling Devices Using the Transfer-Matrix Method";
Solid-State Electronics, 46 (2002), 10; 1545 - 1551. https://doi.org/10.1016/S0038-1101(02)00103-X

147.  T. Grasser, S. Selberherr:
"Electro-Thermal Effects in Mixed-Mode Device Simulation";
Romanian Journal of Information Science and Technology, 5 (2002), 4; 339 - 354.

146.  T.V. Gurov, M. Nedjalkov, P.A. Whitlock, H. Kosina, S. Selberherr:
"Femtosecond Relaxation of Hot Electrons by Phonon Emission in Presence of Electric Field";
Physica B: Condensed Matter, 314 (2002), 1-4; 301 - 304. https://doi.org/10.1016/S0921-4526(01)01417-X

145.  T. Grasser, H. Kosina, S. Selberherr:
"Hydrodynamic and Energy-Transport Models for Semiconductor Device Simulation: Extensions and Critical Issues";
Wisnik (invited), 444 (2002), 28 - 41.

144.  T. Grasser, H. Kosina, S. Selberherr:
"Hydrodynamic and Energy-Transport Models for Semiconductor Device Simulation: Review of Basic Models";
Wisnik (invited), 444 (2002), 18 - 27.

143.  M. Gritsch, H. Kosina, T. Grasser, S. Selberherr:
"Revision of the Standard Hydrodynamic Transport Model for SOI Simulation";
IEEE Transactions on Electron Devices, 49 (2002), 10; 1814 - 1820. https://doi.org/10.1109/TED.2002.803645

142.  A. Gehring, T. Grasser, H. Kosina, S. Selberherr:
"Simulation of Hot-Electron Oxide Tunneling Current Based on a Non-Maxwellian Electron Energy Distribution Function";
Journal of Applied Physics, 92 (2002), 10; 6019 - 6027. https://doi.org/10.1063/1.1516617

141.  H. Ceric, S. Selberherr:
"Simulative Prediction of the Resistance Change due to Electromigration Induced Void Evolution";
Microelectronics Reliability, 42 (2002), 9-11; 1457 - 1460. https://doi.org/10.1016/S0026-2714(02)00169-5

140.  T. Grasser, S. Selberherr:
"Technology CAD: Device Simulation and Characterization";
Journal of Vacuum Science & Technology B, 20 (2002), 1; 407 - 413. https://doi.org/10.1116/1.1445162

139.  M. Nedjalkov, T. Grasser, H. Kosina, S. Selberherr:
"Transient Model for Terminal Current Noise";
Applied Physics Letters, 80 (2002), 4; 607 - 609. https://doi.org/10.1063/1.1447002

138.  M. Nedjalkov, H. Kosina, S. Selberherr, I. Dimov:
"A Backward Monte Carlo Method for Simulation of the Electron Quantum Kinetics in Semiconductors";
VLSI Design, 13 (2001), 1-4; 405 - 411. https://doi.org/10.1155/2001/54247

137.  R. Sabelka, S. Selberherr:
"A Finite Element Simulator for Three-Dimensional Analysis of Interconnect Structures";
Microelectronics Journal, 32 (2001), 2; 163 - 171. https://doi.org/10.1016/S0026-2692(00)00113-0

136.  V. Palankovski, N. Belova, T. Grasser, H. Puchner, S. Aronowitz, S. Selberherr:
"A Methodology for Deep Sub-0.25µm CMOS Technology Prediction";
IEEE Transactions on Electron Devices, 48 (2001), 10; 2331 - 2336. https://doi.org/10.1109/16.954473

135.  V. Palankovski, R. Schultheis, A. Bonacina, S. Selberherr:
"Effectiveness of Silicon Nitride Passivation in III-V Based Heterojunction Bipolar Transistors";
Radiation Effects and Defects in Solids, 156 (2001), 1-4; 261 - 265. https://doi.org/10.1080/10420150108216903

134.  T. Grasser, S. Selberherr:
"Fully Coupled Electrothermal Mixed-Mode Device Simulation of SiGe HBT Circuits";
IEEE Transactions on Electron Devices, 48 (2001), 7; 1421 - 1427. https://doi.org/10.1109/16.930661

133.  V. Palankovski, R. Quay, S. Selberherr:
"Industrial Application of Heterostructure Device Simulation";
IEEE Journal of Solid-State Circuits (invited), 36 (2001), 9; 1365 - 1370. https://doi.org/10.1109/4.944664

132.  M. Gritsch, H. Kosina, T. Grasser, S. Selberherr:
"Influence of Generation/Recombination Effects in Simulations of Partially Depleted SOI MOSFETs";
Solid-State Electronics, 45 (2001), 5; 621 - 627. https://doi.org/10.1016/S0038-1101(01)00080-6

131.  T. Grasser, H. Kosina, S. Selberherr:
"Influence of the Distribution Function Shape and the Band Structure on Impact Ionization Modeling";
Journal of Applied Physics, 90 (2001), 12; 6165 - 6171. https://doi.org/10.1063/1.1415366

130.  T. Grasser, H. Kosina, S. Selberherr:
"Investigation of Spurious Velocity Overshoot Using Monte Carlo Data";
Applied Physics Letters, 79 (2001), 12; 1900 - 1902. https://doi.org/10.1063/1.1405000

129.  V. Palankovski, S. Selberherr:
"Micro Materials Modeling in MINIMOS-NT";
Microsystem Technologies - Micro- and Nanosystems - Information Storage and Processing Systems, 7 (2001), 4; 183 - 187. https://doi.org/10.1007/s005420000076

128.  R. Quay, K. Hess, R. Reuter, M. Schlechtweg, T. Grave, V. Palankovski, S. Selberherr:
"Nonlinear Electronic Transport and Device Performance of HEMTs";
IEEE Transactions on Electron Devices, 48 (2001), 2; 210 - 217. https://doi.org/10.1109/16.902718

127.  K. Dragosits, S. Selberherr:
"Simulation of Ferroelectric Thin Films";
Radiation Effects and Defects in Solids, 156 (2001), 1-4; 157 - 161. https://doi.org/10.1080/10420150108216888

126.  V. Palankovski, R. Schultheis, S. Selberherr:
"Simulation of Power Heterojunction Bipolar Transistors on Gallium Arsenide";
IEEE Transactions on Electron Devices, 48 (2001), 6; 1264 - 1269. https://doi.org/10.1109/16.925258

125.  K. Dragosits, S. Selberherr:
"Two-Dimensional Simulation of Ferroelectric Memory Cells";
IEEE Transactions on Electron Devices, 48 (2001), 2; 316 - 322. https://doi.org/10.1109/16.902733

124.  T. Grasser, H. Kosina, M. Gritsch, S. Selberherr:
"Using Six Moments of Boltzmann's Transport Equation for Device Simulation";
Journal of Applied Physics, 90 (2001), 5; 2389 - 2396. https://doi.org/10.1063/1.1389757

123.  A. Burenkov, K. Tietzel, A. Hössinger, J. Lorenz, H. Ryssel, S. Selberherr:
"A Computationally Efficient Method for Three-Dimensional Simulation of Ion Implantation";
IEICE Transactions on Electronics, E83-C (2000), 8; 1259 - 1266.

122.  H. Kosina, M. Nedjalkov, S. Selberherr:
"A Monte Carlo Method for Small Signal Analysis of the Boltzmann Equation";
Journal of Applied Physics, 87 (2000), 9; 4308 - 4314. https://doi.org/10.1063/1.373070

121.  M. Nedjalkov, H. Kosina, S. Selberherr:
"A Monte-Carlo Method to Analyze the Small Signal Response of the Semiconductor Carriers";
IEICE Transactions on Electronics, E83-C (2000), 8; 1218 - 1223.

120.  R. Quay, C. Moglestue, V. Palankovski, S. Selberherr:
"A Temperature Dependent Model for the Saturation Velocity in Semiconductor Materials";
Materials Science in Semiconductor Processing, 3 (2000), 1-2; 149 - 155. https://doi.org/10.1016/S1369-8001(00)00015-9

119.  H. Brech, T. Grave, S. Selberherr:
"Development of Global Calibration for Accurate GaAs-PHEMT Simulation";
IEEE Transactions on Electron Devices, 47 (2000), 10; 1957 - 1964. https://doi.org/10.1109/16.870581

118.  M. Knaipp, W. Kanert, S. Selberherr:
"Hydrodynamic Modeling of Avalanche Breakdown in a Gate Overvoltage Protection Structure";
Solid-State Electronics, 44 (2000), 7; 1135 - 1143. https://doi.org/10.1016/S0038-1101(00)00046-0

117.  T. Grasser, S. Selberherr:
"Mixed-Mode Device Simulation";
Microelectronics Journal, 31 (2000), 11-12; 873 - 881. https://doi.org/10.1016/S0026-2692(00)00083-5

116.  R. Kosik, P. Fleischmann, B. Haindl, P. Pietra, S. Selberherr:
"On the Interplay Between Meshing and Discretization in Three-Dimensional Diffusion Simulation";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 19 (2000), 11; 1233 - 1240. https://doi.org/10.1109/43.892848

115.  W. Pyka, R. Martins, S. Selberherr:
"Optimized Algorithms for Three-Dimensional Cellular Topography Simulation";
IEEE Journal of Technology Computer Aided Design, 1 (2000), 20; 1 - 36. https://doi.org/10.1109/TCAD.1996.6449177

114.  A. Hössinger, E. Langer, S. Selberherr:
"Parallelization of a Monte Carlo Ion Implantation Simulator";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 19 (2000), 5; 560 - 567. https://doi.org/10.1109/43.845080

113.  R. Strasser, S. Selberherr:
"Practical Inverse Modeling with SIESTA";
IEICE Transactions on Electronics, 83-C (2000), 8; 1303 - 1310.

112.  H. Kosina, M. Nedjalkov, S. Selberherr:
"Theory of the Monte Carlo Method for Semiconductor Device Simulation";
IEEE Transactions on Electron Devices, 47 (2000), 10; 1898 - 1908. https://doi.org/10.1109/16.870569

111.  W. Pyka, H. Kirchauer, S. Selberherr:
"Three-Dimensional Resist Development Simulation - Benchmarks and Integration with Lithography";
Microelectronic Engineering, 53 (2000), 1-4; 449 - 452. https://doi.org/10.1016/S0167-9317(00)00353-1

110.  M. Radi, E. Leitner, S. Selberherr:
"AMIGOS: Analytical Model Interface & General Object-Oriented Solver";
IEEE Journal of Technology Computer Aided Design, 1 (1999), 17; 1 - 72. https://doi.org/10.1109/TCAD.1996.6449174

109.  B. Gonzalez, V. Palankovski, H. Kosina, A. Hernandez, S. Selberherr:
"An Energy Relaxation Time Model for Device Simulation";
Solid-State Electronics, 43 (1999), 9; 1791 - 1795. https://doi.org/10.1016/S0038-1101(99)00132-X

108.  M. Stockinger, A. Wild, S. Selberherr:
"Drive Performance of an Asymmetric MOSFET Structure: The Peak Device";
Microelectronics Journal, 30 (1999), 3; 229 - 233. https://doi.org/10.1016/S0026-2692(98)00111-6

107.  P. Fleischmann, W. Pyka, S. Selberherr:
"Mesh Generation for Application in Technology CAD";
IEICE Transactions on Electronics (invited), E82-C (1999), 6; 937 - 947.

106.  C. Pichler, R. Plasun, R. Strasser, S. Selberherr:
"Simulation of Complete VLSI Fabrication Processes with Heterogeneous Simulation Tools";
IEEE Transactions on Semiconductor Manufacturing, 12 (1999), 1; 76 - 86. https://doi.org/10.1109/66.744527

105.  V. Palankovski, G. Kaiblinger-Grujin, S. Selberherr:
"Study of Dopant-Dependent Band Gap Narrowing in Compound Semiconductor Devices";
Materials Science and Engineering B, 66 (1999), 1-3; 46 - 49. https://doi.org/10.1016/S0921-5107(99)00118-X

104.  W. Pyka, P. Fleischmann, B. Haindl, S. Selberherr:
"Three-Dimensional Simulation of HPCVD - Linking Continuum Transport and Reaction Kinetics with Topography Simulation";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 18 (1999), 12; 1741 - 1749. https://doi.org/10.1109/43.811323

103.  K. Dragosits, M. Knaipp, S. Selberherr:
"Two-Dimensional Simulation of Ferroelectric Memory Cells";
Journal of the Korean Physical Society, 35 (1999), 92; 104 - 106. https://doi.org/10.3938/jkps.35.S104

102.  R. Martins, S. Selberherr, F. Vaz:
"A CMOS IC for Portable EEG Acquisition Systems";
IEEE Transactions on Instrumentation and Measurement, 47 (1998), 5; 1191 - 1196. https://doi.org/10.1109/19.746581

101.  C. Wasshuber, H. Kosina, S. Selberherr:
"A Comparative Study of Single-Electron Memories";
IEEE Transactions on Electron Devices, 45 (1998), 11; 2365 - 2371. https://doi.org/10.1109/16.726659

100.  G. Schrom, A. Stach, S. Selberherr:
"An Interpolation Based MOSFET Model for Low-Voltage Applications";
Microelectronics Journal, 29 (1998), 8; 529 - 534. https://doi.org/10.1016/S0026-2692(98)00002-0

99.  S. Selberherr:
"Die großen Herausforderungen in der Mikroelektronik in den nächsten zehn Jahren";
E&I Elektrotechnik und Informationstechnik (invited), 115 (1998), 7/8; 344 - 348. https://doi.org/10.1007/BF03159602

98.  R. Martins, W. Pyka, R. Sabelka, S. Selberherr:
"High-Precision Interconnect Analysis";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 17 (1998), 11; 1148 - 1159. https://doi.org/10.1109/43.736187

97.  G. Kaiblinger-Grujin, H. Kosina, S. Selberherr:
"Influence of the Doping Element on the Electron Mobility in n-Silicon";
Journal of Applied Physics, 83 (1998), 6; 3096 - 3101. https://doi.org/10.1063/1.367067

96.  R. Plasun, M. Stockinger, S. Selberherr:
"Integrated Optimization Capabilities in the VISTA Technology CAD Framework";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 17 (1998), 12; 1244 - 1251. https://doi.org/10.1109/43.736564

95.  E. Leitner, S. Selberherr:
"Mixed-Element Decomposition Method for Three-Dimensional Grid Adaptation";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 17 (1998), 7; 561 - 572. https://doi.org/10.1109/43.709394

94.  W. Bohmayr, A. Burenkov, J. Lorenz, H. Ryssel, S. Selberherr:
"Monte Carlo Simulation of Silicon Amorphization during Ion Implantation";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 17 (1998), 12; 1236 - 1243. https://doi.org/10.1109/43.736563

93.  C. Wasshuber, H. Kosina, S. Selberherr:
"Single-Electron Memories";
VLSI Design, 8 (1998), 1-4; 219 - 223. https://doi.org/10.1155/1998/83017

92.  H. Kirchauer, S. Selberherr:
"Three-Dimensional Photolithography Simulator Including Rigorous Nonplanar Exposure Simulation for Off-Axis Illumination";
Proceedings of SPIE, 3334 (1998), 764 - 776. https://doi.org/10.1117/12.310809

91.  G. Schrom, De Vivek, S. Selberherr:
"VLSI Performance Metric Based on Minimum TCAD Simulations";
IEEE Journal of Technology Computer Aided Design, 1 (1998), 12; 1 - 29. https://doi.org/10.1109/TCAD.1996.6449169

90.  H. Noll, S. Selberherr:
"Zur Entwicklung der Mikroelektronik";
Telematik, 4 (1998), 1; 2 - 6.

89.  C. Wasshuber, H. Kosina, S. Selberherr:
"A Single-Electron Device and Circuit Simulator with a New Algorithm to Incorporate Co-tunneling";
IEEE Journal of Technology Computer Aided Design, 1 (1997), 7; 1 - 18. https://doi.org/10.1109/TCAD.1996.6449164

88.  P. Fleischmann, S. Selberherr:
"Fully Unstructured Delaunay Mesh Generation Using a Modified Advancing Front Approach for Applications in Technology CAD";
IEEE Journal of Technology Computer Aided Design, 1 (1997), 8; 1 - 38. https://doi.org/10.1109/TCAD.1996.6449165

87.  C. Pichler, R. Plasun, R. Strasser, S. Selberherr:
"High-Level TCAD Task Representation and Automation";
IEEE Journal of Technology Computer Aided Design, 1 (1997), 5; 1 - 30. https://doi.org/10.1109/TCAD.1996.6449162

86.   Kaiblinger-Grujin, G., Kosina, H., Köpf, Ch., Selberherr, S. (1997).
Influence of Dopant Species on Electron Mobility in Heavily Doped Semiconductors.
Materials Science Forum, 258–263, 939–944. https://doi.org/10.4028/www.scientific.net/msf.258-263.939 (reposiTUm)

85.  H. Brech, T. Grave, T. Simlinger, S. Selberherr:
"Optimization of Pseudomorphic HEMTs Supported by Numerical Simulations";
IEEE Transactions on Electron Devices, 44 (1997), 11; 1822 - 1828. https://doi.org/10.1109/16.641348

84.  C. Köpf, H. Kosina, S. Selberherr:
"Physical Models for Strained and Relaxed GaInAs Alloys: Band Structure and Low-Field Transport";
Solid-State Electronics, 41 (1997), 8; 1139 - 1152. https://doi.org/10.1016/S0038-1101(97)00051-8

83.  H. Kirchauer, S. Selberherr:
"Rigorous Three-Dimensional Photoresist Exposure and Development Simulation over Nonplanar Topography";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 16 (1997), 12; 1431 - 1438. https://doi.org/10.1109/43.664225

82.  C. Wasshuber, H. Kosina, S. Selberherr:
"SIMON - A Simulator for Single-Electron Tunnel Devices and Circuits";
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 16 (1997), 9; 937 - 944. https://doi.org/10.1109/43.658562

81.  T. Simlinger, H. Brech, T. Grave, S. Selberherr:
"Simulation of Submicron Double-Heterojunction High Electron Mobility Transistors with MINIMOS-NT";
IEEE Transactions on Electron Devices, 44 (1997), 5; 700 - 707. https://doi.org/10.1109/16.568029

80.  H. Kirchauer, S. Selberherr:
"Three-Dimensional Photolithography Simulation";
IEEE Journal of Technology Computer Aided Design, 1 (1997), 6; 1 - 37. https://doi.org/10.1109/TCAD.1996.6449163

79.  K. Vinzenz, S. Selberherr:
"Kommentar zu Prinzipien der virtuellen Realität und deren Anwendungen in intraoperativen Navigationshilfesystemen";
Acta Chirurgica Austriaca (invited), 28 (1996), 1; 60 - 61.

78.  G. Schrom, C. Pichler, T. Simlinger, S. Selberherr:
"On the Lower Bounds of CMOS Supply Voltage";
Solid-State Electronics, 39 (1996), 4; 425 - 430. https://doi.org/10.1016/0038-1101(95)00171-9

77.  N. Khalil, J. Faricelli, C. Huang, S. Selberherr:
"Two-Dimensional Dopant Profiling of Submicron MOSFET Using Nonlinear Least Squares Inverse Modeling";
Journal of Vacuum Science & Technology B, 14 (1996), 1; 224 - 230. https://doi.org/10.1116/1.589033

76.   Strasser, E., Selberherr, S. (1995).
Algorithms and Models for Cellular Based Topography Simulation.
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 14(9), 1104–1114. https://doi.org/10.1109/43.406712 (reposiTUm)

75.   Puchner, H., Selberherr, S. (1995).
An Advanced Model for Dopant Diffusion in Polysilicon.
IEEE Transactions on Electron Devices, 42(10), 1750–1755. https://doi.org/10.1109/16.464423 (reposiTUm)

74.   Kosina, H., Langer, E., Selberherr, S. (1995).
Device Modelling for the 1990s.
Microelectronics Journal, 26(2–3), 217–233. https://doi.org/10.1016/0026-2692(95)98923-f (reposiTUm)

73.   Stippel, H., Leitner, E., Pichler, Ch., Puchner, H., Strasser, E., Selberherr, S. (1995).
Process Simulation for the 1990s.
Microelectronics Journal, 26(2–3), 203–215. https://doi.org/10.1016/0026-2692(95)98922-e (reposiTUm)

72.   Khalil, N., Faricelli, J., Bell, D., Selberherr, S. (1995).
The Extraction of Two-Dimensional MOS Transistor Doping via Inverse Modeling.
IEEE Electron Device Letters, 16(1), 17–19. https://doi.org/10.1109/55.363213 (reposiTUm)

71.   Mukai, M., Tatsumi, T., Nakauchi, N., Kobayashi, T., Koyama, K., Komatsu, Y., Bauer, R., Rieger, G., Selberherr, S. (1995).
The Simulation System for Three-Dimensional Capacitance and Current Density Calculation With a User Friendly GUI.
Technical Report of IEICE, 95(223), 63–68. (reposiTUm)

70.   Halama, S., Fasching, F., Fischer, C., Kosina, H., Leitner, E., Lindorfer, P., Pichler, Ch., Pimingstorfer, H., Puchner, H., Rieger, G., Schrom, G., Simlinger, T., Stiftinger, M., Stippel, H., Strasser, E., Tuppa, W., Wimmer, K., Selberherr, S. (1995).
The Viennese Integrated System for Technology CAD Applications.
Microelectronics Journal, 26(2–3), 137–158. https://doi.org/10.1016/0026-2692(95)98918-h (reposiTUm)

69.   Bohmayr, W., Burenkov, A., Lorenz, J., Ryssel, H., Selberherr, S. (1995).
Trajectory Split Method for Monte Carlo Simulation of Ion Implantation.
IEEE Transactions on Semiconductor Manufacturing, 8(4), 402–407. https://doi.org/10.1109/66.475181 (reposiTUm)

68.   Brand, H., Selberherr, S. (1995).
Two-Dimensional Simulation of Thermal Runaway in a Nonplanar GTO-Thyristor.
IEEE Transactions on Electron Devices, 42(12), 2137–2146. https://doi.org/10.1109/16.477772 (reposiTUm)

67.   Halama, S., Pichler, C., Rieger, G., Schrom, G., Simlinger, T., Selberherr, S. (1995).
VISTA - User Interface, Task Level, and Tool Integration.
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 14(10), 1208–1222. https://doi.org/10.1109/43.466337 (reposiTUm)

66.   Abramo, A., Baudry, L., Brunetti, R., Castagne, R., Charef, M., Dessene, F., Dollfus, P., Dutton, R., Engl, W. L., Fauquembergue, R., Fiegna, C., Fischetti, M. V., Galdin, S., Goldsman, N., Hackel, M., Hamaguchi, C., Hess, K., Hennacy, K., Hesto, P., … Yoshii, A. (1994).
A Comparison of Numerical Solutions of the Boltzmann Transport Equation for High-Energy Electron Transport Silicon.
IEEE Transactions on Electron Devices, 41(9), 1646–1654. https://doi.org/10.1109/16.310119 (reposiTUm)

65.   Kosina, H., Selberherr, S. (1994).
A Hybrid Device Simulator That Combines Monte Carlo and Drift-Diffusion Analysis.
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 13(2), 201–210. https://doi.org/10.1109/43.259943 (reposiTUm)

64.   Strasser, E., Schrom, G., Wimmer, K., Selberherr, S. (1994).
Accurate Simulation of Pattern Transfer Processes Using Minkowski Operations.
IEICE Transactions on Electronics, E77-C(2), 92–97. (reposiTUm)

63.   Brand, H., Selberherr, S. (1994).
Electrothermal Analysis of Latch-Up in an Insulated Gate Transistor (IGT).
IEICE Transactions on Electronics, E77-C(2), 179–186. (reposiTUm)

62.   Stippel, H., Selberherr, S. (1994).
Monte Carlo Simulation of Ion Implantation for Three-Dimensional Structures Using an Octree.
IEICE Transactions on Electronics, E77-C(2), 118–123. (reposiTUm)

61.   Fasching, F., Tuppa, W., Selberherr, S. (1994).
VISTA - The Data Level.
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 13(1), 72–81. https://doi.org/10.1109/43.273748 (reposiTUm)

60.   Fischer, C., Nanz, G., Selberherr, S. (1993).
Finite Difference, Boundary-Fitted Grid Generation for Arbitrarily Shaped Two-Dimensional Simulation Areas.
Computer Methods in Applied Mechanics and Engineering, 110(1–2), 17–24. https://doi.org/10.1016/0045-7825(93)90016-q (reposiTUm)

59.   Halama, S., Selberherr, S. (1993).
Future Aspects of Process and Device Simulation.
Electron Technology, 26, 49–57. (reposiTUm)

58.   Selberherr, S. (1993).
Technology Computer-Aided Design.
South African Journal of Physics, 16(1/2), 1–5. (reposiTUm)

57.   Nanz, G., Dickinger, P., Selberherr, S. (1992).
Calculation of Contact Currents in Device Simulation.
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 11(1), 128–136. https://doi.org/10.1109/43.108625 (reposiTUm)

56.   Heinreichsberger, O., Selberherr, S., Stiftinger, M., Traar, K. P. (1992).
Fast Iterative Solution of Carrier Continuity Equations for Three-Dimensional Device Simulation.
SIAM Journal on Scientific and Statistical Computing, 13(1), 289–306. https://doi.org/10.1137/0913015 (reposiTUm)

55.   Demel, J., Selberherr, S. (1991).
Application of the Complete Tableau Approach in JANAP.
Electrosoft, 2(6), 243–260. (reposiTUm)

54.   Selberherr, S. (1991).
Device Modeling and Physics.
Physica Scripta, T35, 293–298. https://doi.org/10.1088/0031-8949/1991/t35/057 (reposiTUm)

53.   Selberherr, S., Stiftinger, M., Heinreichsberger, O., Traar, K. P. (1991).
On the Numerical Solution of the Three-Dimensional Semiconductor Device Equations on Vector-Concurrent Computers.
Computer Physics Communications, 67(1), 145–156. https://doi.org/10.1016/0010-4655(91)90227-c (reposiTUm)

52.   Nanz, G., Kausel, W., Selberherr, S. (1991).
Self-Adaptive Space and Time Grids in Device Simulation.
International Journal for Numerical Methods in Engineering, 31(7), 1357–1374. https://doi.org/10.1002/nme.1620310709 (reposiTUm)

51.   Kausel, W., Nylander, J. O., Nanz, G., Selberherr, S., Poetzl, H. (1990).
BAMBI - A Transient 2d-Mesfet Model With General Boundary Conditions Including Schottky and Current Controlled Contacts.
Microelectronics Journal, 21(5), 5–21. https://doi.org/10.1016/0026-2692(90)90014-t (reposiTUm)

50.   Kosina, H., Selberherr, S. (1990).
Coupling of Monte Carlo and Drift Diffusion Method With Applications to Metal Oxide Semiconductor Field Effect Transistors.
Japanese Journal of Applied Physics, 29(12A), L2283. https://doi.org/10.1143/jjap.29.l2283 (reposiTUm)

49.   Habas, P., Selberherr, S. (1990).
Impact of the Non-Degenerate Gate Effect on the Performance of Submicron MOS-Devices.
Informacije Midem - Journal of Microelectronics Electronic Components and Materials, 20(4), 185–188. (reposiTUm)

48.   Thurner, M., Lindorfer, P., Selberherr, S. (1990).
Numerical Treatment of Nonrectangular Field-Oxide for 3-D MOSFET Simulation.
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 9(11), 1189–1197. https://doi.org/10.1109/43.62756 (reposiTUm)

47.   Habaš, P., Selberherr, S. (1990).
On the Effect of Non-Degenerate Doping of Polysilicon Gate in Thin Oxide MOS-Devices - Analytical Modeling.
Solid-State Electronics, 33(12), 1539–1544. https://doi.org/10.1016/0038-1101(90)90134-z (reposiTUm)

46.   Selberherr, S., Hänsch, W., Seavey, M., Slotboom, J. (1990).
The Evolution of the MINIMOS Mobility Model.
AEÜ - International Journal of Electronics and Communications, 44(3), 161–172. (reposiTUm)

45.  S. Selberherr, E. Langer:
"Three Dimensional Process and Device Modeling";
Microelectronics Reliability, 30 (1990), 3; 624. https://doi.org/10.1016/0026-2714(90)90512-L

44.   Thurner, M., Selberherr, S. (1990).
Three-Dimensional Effects Due to the Field Oxide in MOS Devices Analyzed With MINIMOS 5.
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 9(8), 856–867. https://doi.org/10.1109/43.57786 (reposiTUm)

43.   Nylander, J. O., Masszi, F., Selberherr, S., Berg, S. (1989).
Computer Simulations of Schottky Contacts With a Non-Constant Recombination Velocity.
Solid-State Electronics, 32(5), 363–367. https://doi.org/10.1016/0038-1101(89)90125-1 (reposiTUm)

42.   Selberherr, S. (1989).
MOS Device Modeling at 77K.
IEEE Transactions on Electron Devices, 36(8), 1464–1474. https://doi.org/10.1109/16.30960 (reposiTUm)

41.   Hobler, G., Selberherr, S. (1989).
Monte Carlo Simulation of Ion Implantation Into Two- And Three-Dimensional Structures.
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 8(5), 450–459. https://doi.org/10.1109/43.24873 (reposiTUm)

40.   Selberherr, S. (1989).
Process Modeling.
Microelectronic Engineering, 9(1–4), 605–610. https://doi.org/10.1016/0167-9317(89)90129-9 (reposiTUm)

39.   Selberherr, S., Langer, E. (1989).
Three Dimensional Process and Device Modeling.
Microelectronics Journal, 20(1–2), 113–127. https://doi.org/10.1016/0026-2692(89)90126-2 (reposiTUm)

38.   Kausel, W., Poetzl, H., Nanz, G., Selberherr, S. (1989).
Two-Dimensional Transient Simulation of the Turn-Off Behavior of a Planar MOS-Transistor.
Solid-State Electronics, 32(9), 685–709. https://doi.org/10.1016/0038-1101(89)90002-6 (reposiTUm)

37.   Selberherr, S. (1988).
Computer Für Wissenschaft Und Forschung.
Österreichische Hochschulzeitung, 5, 9–10. (reposiTUm)

36.   Selberherr, S. (1988).
Computerunterstützte Konstruktion Von Bauelementen Der Mikroelektronik.
Österreichische Hochschulzeitung, 7, 25. (reposiTUm)

35.   Hobler, G., Selberherr, S. (1988).
Two-Dimensional Modeling of Ion Implantation Induced Point Defects.
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 7(2), 174–180. https://doi.org/10.1109/43.3147 (reposiTUm)

34.   BUDIL, M., GUERRERO, E., BRABEC, T., SELBERHERR, S., POETZL, H. (1987).
A New Model for the Determination of Point Defect Equilibrium Concentrations in Silicon.
COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering, 6(1), 37–44. https://doi.org/10.1108/eb010299 (reposiTUm)

33.   Hänsch, W., Selberherr, S. (1987).
MINIMOS 3: A MOSFET Simulator That Includes Energy Balance.
IEEE Transactions on Electron Devices, 34(5), 1074–1078. https://doi.org/10.1109/t-ed.1987.23047 (reposiTUm)

32.   Hobler, G., Langer, E., Selberherr, S. (1987).
Two-Dimensional Modeling of Ion Implantation With Spatial Moments.
Solid-State Electronics, 30(4), 445–455. https://doi.org/10.1016/0038-1101(87)90175-4 (reposiTUm)

31.   Baghai-Wadji, A. R., Selberherr, S., Seifert, F. J. (1986).
Two-Dimensional Green’s Function of a Semi-Infinite Anisotropic Dielectric in the Wavenumber Domain.
IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 33(3), 315–317. https://doi.org/10.1109/t-uffc.1986.26834 (reposiTUm)

30.  S. Selberherr:
"Process and Device Modeling for VLSI";
Microelectronics Journal, 16 (1985), 6; 56 - 57. https://doi.org/10.1016/S0026-2692(85)80172-5

29.   Jüngling, W., Pichler, P., Selberherr, S., Guerrero, E., Pötzl, H. (1985).
Simulation of Critical IC Fabrication Processes Using Advanced Physical and Numerical Methods.
IEEE Journal of Solid-State Circuits, 20(1), 76–87. https://doi.org/10.1109/jssc.1985.1052279 (reposiTUm)

28.   Pichler, P., Jüngling, W., Selberherr, S., Guerrero, E., Pötzl, H. (1985).
Simulation of Critical IC-Fabrication Steps.
IEEE Transactions on Electron Devices, 32(10), 1940–1953. https://doi.org/10.1109/t-ed.1985.22226 (reposiTUm)

27.   Pichler, P., Jüngling, W., Selberherr, S., Pötzl, H. (1985).
Two-Dimensional Coupled Diffusion Modeling.
Physica B: Condensed Matter, 129(1–3), 187–191. https://doi.org/10.1016/0378-4363(85)90566-2 (reposiTUm)

26.   Markowich, P. A., Selberherr, S. (1984).
A Singular Perturbation Analysis of the Fundamental Semiconductor Device Equations - Analysis and Numerical Experiments.
Computational and Applied Mathematics, 3(2), 131–156. (reposiTUm)

25.   Selberherr, S., Ringhofer, C. A. (1984).
Implications of Analytical Investigations About the Semiconductor Equations on Device Modeling Programs.
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 3(1), 52–64. https://doi.org/10.1109/tcad.1984.1270057 (reposiTUm)

24.   Schütz, A., Selberherr, S., Pötzl, H. (1984).
Modeling MOS-Transistors in the Avalanche Breakdown Regime.
Transactions on Computer Simulation, 1(1), 1–14. (reposiTUm)

23.   JÜNGLING, W., GUERRERO, E., SELBERHERR, S. (1984).
On Modeling the Intrinsic Number and Fermi Levels for Device and Process Simulation.
COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering, 3(2), 79–105. https://doi.org/10.1108/eb009989 (reposiTUm)

22.   Selberherr, S. (1984).
Process and Device Modeling for VLSI.
Microelectronics Reliability, 24(2), 225–257. https://doi.org/10.1016/0026-2714(84)90450-5 (reposiTUm)

21.   Schütz, A., Selberherr, S., Pötzl, H. W. (1984).
Temperature Distribution and Power Dissipation in MOSFETs.
Solid-State Electronics, 27(4), 394–395. https://doi.org/10.1016/0038-1101(84)90175-8 (reposiTUm)

20.   Demel, J., Selberherr, S. (1984).
VDPACK - Ein Benutzerorientiertes Unterprogrammpaket Zur Realisierung Einer Dynamischen Speicherverwaltung in Fortran.
Angewandte Informatik, 6, 244–247. (reposiTUm)

19.   Machek, J., Selberherr, S. (1983).
A Novel Finite-Element Approach to Device Modeling.
IEEE Transactions on Electron Devices, 30(9), 1083–1092. https://doi.org/10.1109/t-ed.1983.21262 (reposiTUm)

18.   Markowich, P. A., Ringhofer, Ch., Selberherr, S. (1983).
A Singular Perturbation Approach for the Analysis of the Fundamental Semiconductor Devices.
MRC Technical Summary Report, 2482, 1–50. (reposiTUm)

17.   Markowich, P. A., Ringhofer, C. A., Selberherr, S., Lentini, M. (1983).
A Singular Perturbation Approach for the Analysis of the Fundamental Semiconductor Equations.
IEEE Transactions on Electron Devices, 30(9), 1165–1180. https://doi.org/10.1109/t-ed.1983.21273 (reposiTUm)

16.   Markowich, P. A., Ringhofer, Ch., Langer, E., Selberherr, S. (1983).
An Asymptotic Analysis of Single-Junction Semiconductor Devices.
MRC Technical Summary Report, 2527, 1–62. (reposiTUm)

15.   Franz, A. F., Franz, G. A., Selberherr, S., Ringhofer, C., Markowich, P. (1983).
Finite Boxes - A Generalization of the Finite Difference Method Suitable for Semiconductor Device Simulation.
IEEE Transactions on Electron Devices, 30(9), 1070–1082. https://doi.org/10.1109/t-ed.1983.21261 (reposiTUm)

14.   Ringhofer, Ch., Selberherr, S. (1983).
Implications of Analytical Investigations About the Semiconductor Equations on Device Modeling Programs.
MRC Technical Summary Report, 2513, 1–49. (reposiTUm)

13.   Langer, E., Selberherr, S., Markowich, P. A., Ringhofer, C. A. (1983).
Numerical Analysis of Acoustic Wave Generation in Anisotropic Piezoelectric Materials.
Sensors and Actuators, 4, 71–76. https://doi.org/10.1016/0250-6874(83)85010-0 (reposiTUm)

12.   Langer, E., Selberherr, S., Mader, H. (1982).
A Numerical Analysis of Bulk-Barrier Diodes.
Solid-State Electronics, 25(4), 317–324. https://doi.org/10.1016/0038-1101(82)90141-1 (reposiTUm)

11.   Markowich, P. A., Ringhofer, Ch., Selberherr, S., Langer, E. (1982).
A Singularly Perturbed Boundary Value Problem Modelling a Semiconductor Device.
MRC Technical Summary Report, 2388, 1–57. (reposiTUm)

10.   Schütz, A., Selberherr, S., Pötzl, H. W. (1982).
A Two-Dimensional Model of the Avalanche Effect in MOS Transistors.
Solid-State Electronics, 25(3), 177–183. https://doi.org/10.1016/0038-1101(82)90105-8 (reposiTUm)

9.   Schütz, A., Selberherr, S., Pötzl, H. (1982).
Analysis of Breakdown Phenomena in MOSFET’s. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1(2), 77–85. https://doi.org/10.1109/tcad.1982.1269997 (reposiTUm)
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8.   Goebl, H., Selberherr, S., Rase, W. D., Pudlatz, H. (1982).
Atlas, Matrices Et Similarités: Petit Aperçu Dialectométrique.
Computers and the Humanities, 16(2), 69–84. https://doi.org/10.1007/bf02259737 (reposiTUm)

7.   Selberherr, S., Schütz, A., Pötzl, H. (1982).
Investigation of Parameter Sensitivity of Short Channel MOSFETs.
Solid-State Electronics, 25(2), 85–90. https://doi.org/10.1016/0038-1101(82)90035-1 (reposiTUm)

6.   Langer, E., Selberherr, S., Mader, H. (1982).
Numerische Analyse Der Bulk-Barrier Diode.
AEÜ - International Journal of Electronics and Communications, 36(2), 86–91. (reposiTUm)

5.   Selberherr, S., Guerrero, E. (1981).
Simple and Accurate Representation of Implantation Parameters by Low Order Polynomals.
Solid-State Electronics, 24(6), 591–593. https://doi.org/10.1016/0038-1101(81)90081-2 (reposiTUm)

4.   Selberherr, S., Schütz, A., Pötzl, H. (1981).
Two-Dimensional MOS Transistor Modelling.
European Electronics, 1(3), 20–30. (reposiTUm)

3.   Selberherr, S., Schütz, A., Pötzl, H. (1980).
MINIMOS - A Two-Dimensional MOS Transistor Analyzer.
IEEE Transactions on Electron Devices, 27(8), 1540–1550. https://doi.org/10.1109/t-ed.1980.20068 (reposiTUm)

2.   Selberherr, S., Schütz, A., Pötzl, H. (1980).
MINIMOS - Zweidimensionale Modellierung Von MOS-Transistoren (Teil 1).
Elektronikschau, 9, 18–23. (reposiTUm)

1.   Selberherr, S., Schütz, A., Pötzl, H. (1980).
MINIMOS - Zweidimensionale Modellierung Von MOS-Transistoren (Teil 2).
Elektronikschau, 10, 54–58. (reposiTUm)

Contributions to Books

80.   Cervenka, J., Kosik, R., Vasicek, M.-T., Gritsch, M., Selberherr, S., Grasser, T. (2023).
Macroscopic Transport Models for Classical Device Simulation.
In M. Rudan, R. Brunetti, S. Reggiani (Eds.), Springer Handbook of Semiconductor Devices (pp. 1335–1381). Springer. https://doi.org/10.1007/978-3-030-79827-7_37 (reposiTUm)

79.   Selberherr, S., Sverdlov, V. (2023).
Technology Computer-Aided Design: A Key Component of Microelectronics’ Development.
In A. Nathan, S. K. Saha, R. M. Todi (Eds.), 75th Anniversary of the Transistor (pp. 337–347). Wiley. https://doi.org/10.1002/9781394202478.ch28 (reposiTUm)

78.   Sverdlov, V., Selberherr, S. (2022).
Spin-Based Devices for Digital Applications.
In M. Rudan, R. Brunetti, S. Reggiani (Eds.), Springer Handbook of Semiconductor Devices (pp. 1123–1166). Springer International Publishing. https://doi.org/10.1007/978-3-030-79827-7_31 (reposiTUm)

77.   Filipovic, L., Selberherr, S. (2021).
Electro-Thermo-Mechanical Simulation of Semiconductor Metal Oxide Gas Sensors.
In M. I. Khan (Ed.), Prime Archives in Material Science (pp. 1–38). Vide Leaf. (reposiTUm)

76.   Ceric, H., Zahedmanesh, H., Lacerda de Orio, R., Selberherr, S. (2021).
Models and Techniques for Reliability Studies of Nano-Scaled Interconnects.
In S. Y. Yurish (Ed.), Advances in Measurements and Instrumentation: Reviews (pp. 93–111). International Frequency Sensor Association (IFSA) Publishing. (reposiTUm)

75.   Benam, M., Wołoszyn, M., Selberherr, S. (2021).
Self-Consistent Monte Carlo Solution of Wigner and Poisson Equations Using an Efficient Multigrid Approach.
In I. Georgiev, H. Kostadinov, E. Lilkova (Eds.), Advanced Computing in Industrial Mathematics (pp. 60–67). Springer. https://doi.org/10.1007/978-3-030-71616-5_7 (reposiTUm)

74.   Coppeta, R., Lahlalia, A., Kozic, D., Hammer, R., Riedler, J., Toschkoff, G., Singulani, A., Ali, Z., Sagmeister, M., Carniello, S., Selberherr, S., Filipovic, L. (2020).
Electro-Thermal-Mechanical Modeling of Gas Sensor Hotplates.
In W. D. van Driel, O. Pyper, C. Schumann (Eds.), Sensor Systems Simulations (pp. 17–72). Springer International Publishing. https://doi.org/10.1007/978-3-030-16577-2_2 (reposiTUm)

73.   Fiorentini, S., Lacerda de Orio, R., Selberherr, S., Ender, J., Goes, W., Sverdlov, V. (2020).
Influence of Current Redistribution in Switching Models for Perpendicular STT-MRAM.
In J. A. Martino, B.-Y. Nguyen, F. Gamiz, H. Ishii, J.-P. Raskin, S. Selberherr, E. Simoen (Eds.), ECS Transactions (pp. 159–164). ECS Transactions. https://doi.org/10.1149/09705.0159ecst (reposiTUm)

72.   Quell, M., Diamantopoulos, G., Hössinger, A., Selberherr, S., Weinbub, J. (2020).
Parallel Correction for Hierarchical Re-Distancing Using the Fast Marching Method.
In I. Dimov, S. Fidanova (Eds.), Advances in High Performance Computing (pp. 438–451). Springer International Publishing. https://doi.org/10.1007/978-3-030-55347-0_37 (reposiTUm)

71.   Quell, M., Manstetten, P., Hössinger, A., Selberherr, S., Weinbub, J. (2020).
Parallelized Construction of Extension Velocities for the Level-Set Method.
In R. Wyrzykowski, E. Deelman, J. Dongarra, K. Karczewski (Eds.), Parallel Processing and Applied Mathematics (pp. 348–358). Springer International Publishing. https://doi.org/10.1007/978-3-030-43229-4_30 (reposiTUm)

70.   Benam, M., Nedjalkov, M., Selberherr, S. (2019).
A Wigner Potential Decomposition in the Signed-Particle Monte Carlo Approach.
In G. Nikolov, N. T. Kolkovska, K. Georgiev (Eds.), Numerical Methods and Applications (pp. 263–272). Springer International Publishing. https://doi.org/10.1007/978-3-030-10692-8_29 (reposiTUm)

69.   Gnam, L., Manstetten, P., Hössinger, A., Selberherr, S., Weinbub, J. (2019).
Accelerating Flux Calculations Using Sparse Sampling.
In L. Filipovic, T. Grasser (Eds.), Miniaturized Transistors (pp. 176–192). MDPI. https://doi.org/10.3390/mi9110550 (reposiTUm)

68.   Gnam, L., Selberherr, S., Weinbub, J. (2019).
Evaluation of Serial and Parallel Shared-Memory Distance-1 Graph Coloring Algorithms.
In G. Nikolov, N. T. Kolkovska, K. Georgiev (Eds.), Numerical Methods and Applications (pp. 106–114). Springer International Publishing. https://doi.org/10.1007/978-3-030-10692-8_12 (reposiTUm)

67.   Klemenschits, X., Selberherr, S., Filipovic, L. (2019).
Modeling of Gate Stack Patterning for Advanced Technology Nodes: A Review.
In L. Filipovic, T. Grasser (Eds.), Miniaturized Transistors (pp. 105–135). MDPI. https://doi.org/10.3390/mi9120631 (reposiTUm)

66.   Sadi, T., Medina-Bailon, C., Nedjalkov, M., Lee, J., Badami, O., Berrada, S., Carrillo-Nunez, H., Georgiev, V., Selberherr, S., Asenov, A. (2019).
Simulation of the Impact of Ionized Impurity Scattering on the Total Mobility in Si Nanowire Transistors.
In A. García-Loureiro, K. Kalna, N. Seoane (Eds.), Materials (p. 124). MDPI. https://doi.org/10.3390/ma12010124 (reposiTUm)

65.   Windbacher, T., Makarov, A., Selberherr, S., Mahmoudi, H., Malm, B. G., Ekström, M., Östling, M. (2019).
The Exploitation of the Spin-Transfer Torque Effect for CMOS Compatible Beyond Von Neumann Computing.
In S. K. Kurinec, S. Walia, K. Iniewski (Eds.), Energy Efficient Computing, Electronics: Devices to Systems; Devices, Circuits, and Systems Series (pp. 93–155). CRC Press. (reposiTUm)

64.   Ruscher, S. H., Weinbub, J., Selberherr, S. (2018).
Evaluating Software Testing Methods in an Active and Assisted Living Context.
In F. Piazolo, S. Schlögl (Eds.), Innovative Lösungen für eine alternde Gesellschaft (pp. 68–76). Pabst Science Publishers. (reposiTUm)

63.   Manstetten, P., Gnam, L., Hössinger, A., Selberherr, S., Weinbub, J. (2018).
Sparse Surface Speed Evaluation on a Dynamic Three-Dimensional Surface Using an Iterative Partitioning Scheme.
In Y. Shi, H. Fu, Y. Tian, V. V. Krzhizhanovskaya, M. H. Lees, J. Dongarra, P. M. A. Sloot (Eds.), Lecture Notes in Computer Science (pp. 694–707). Springer International Publishing. https://doi.org/10.1007/978-3-319-93698-7_53 (reposiTUm)

62.   Makarov, A., Sverdlov, V., Selberherr, S. (2018).
Ultra-Fast Switching of a Free Magnetic Layer With Out-Of-Plane Magnetization in Spin-Orbit Torque MRAM Cells.
In J. A. Martino, J.-P. Raskin, S. Selberherr, H. Ishii, F. Gamiz, B.-Y. Nguyen, A. Yoshino (Eds.), ECS Transactions (pp. 213–218). ECS Transactions. https://doi.org/10.1149/08508.0213ecst (reposiTUm)

61.   Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S. (2016).
A Universal Nonvolatile Processing Environment.
In S. Luryi, J. Xu, A. Zaslavsky (Eds.), Future Trends in Microelectronics - Journey into the Unknown (pp. 83–91). John Wiley, Sons. (reposiTUm)

60.   Gutierrez-D, E. A., Gamiz, F., Sverdlov, V., Selberherr, S., Torres-J, A. (2016).
Device Physics, Modeling, and Technology for Nano-Scaled Semiconductor Devices.
In E. A. Gutierrez-Dominguez (Ed.), Nano-Scaled Semiconductor Devices: Physics, Modelling, Characterisation, and Societal Impact (pp. 17–185). Institution of Engineering and Technology. https://doi.org/10.1049/pbcs027e_ch2 (reposiTUm)

59.   Osintsev, D., Sverdlov, V., Selberherr, S. (2016).
Electron Momentum and Spin Relaxation in Silicon Films.
In G. Russo, V. Capasso, G. Nicosia, V. Romano (Eds.), Mathematics in Industry (pp. 695–700). Springer International Publishing. https://doi.org/10.1007/978-3-319-23413-7_96 (reposiTUm)

58.   Dimov, I., Nedjalkov, M., Sellier, J. M., Selberherr, S. (2016).
Neumann Series Analysis of the Wigner Equation Solution.
In G. Russo, V. Capasso, G. Nicosia, V. Romano (Eds.), Mathematics in Industry (pp. 701–707). Springer International Publishing. https://doi.org/10.1007/978-3-319-23413-7_97 (reposiTUm)

57.   Sverdlov, V., Osintsev, D., Selberherr, S. (2016).
Silicon-On-Insulator for Spintronic Applications: Spin Lifetime and Electric Spin Manipulation.
In J. J. Liou, S.-K. Liaw, Y.-H. Chung (Eds.), Nano Devices and Sensors (pp. 29–48). De Gruyter. https://doi.org/10.1515/9781501501531-003 (reposiTUm)

56.   Sverdlov, V., Selberherr, S. (2015).
(Invited) Spin-Based Silicon and CMOS-Compatible Devices.
In Y. Omura, J. A. Martino, J.-P. Raskin, S. Selberherr, H. Ishii, F. Gamiz, B.-Y. Nguyen (Eds.), ECS Transactions (pp. 223–231). ECS Transactions. https://doi.org/10.1149/06605.0223ecst (reposiTUm)

55.   Grasser, T., Langer, E., Selberherr, S. (2015).
Institut Für Mikroelektronik / Institute for Microelectronics.
In K. Unterrainer (Ed.), Die Fakultät für Elektrotechnik und Informationstechnik / The Faculty of Electrical Engineering and Information Technology (Vol. 4, pp. 57–62). Böhlau. https://doi.org/10.7767/9783205202240-006 (reposiTUm)

54.   Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S. (2015).
Novel Buffered Magnetic Logic Gate Grid.
In F. Roozeboom, V. Narayanan, K. Kakushima, P. J. Timans, E. P. Gusev, Z. Karim, S. DeGendt (Eds.), ECS Transactions (pp. 295–303). ECS Transactions. https://doi.org/10.1149/06604.0295ecst (reposiTUm)

53.   Ellinghaus, P., Nedjalkov, M., Selberherr, S. (2015).
Optimized Particle Regeneration Scheme for the Wigner Monte Carlo Method.
In I. Dimov, S. Fidanova, I. Lirkov (Eds.), Numerical Methods and Applications (pp. 27–33). Springer International Publishing. https://doi.org/10.1007/978-3-319-15585-2_3 (reposiTUm)

52.   Makarov, A., Sverdlov, V., Selberherr, S. (2015).
Progress in Magnetoresistive Memory: Magnetic Tunnel Junctions With a Composite Free Layer.
In S. Cristoloveanu, M. Shur (Eds.), Frontiers in Electronics. World Scientific Publishing Co. https://doi.org/10.1142/9789814656917_0001 (reposiTUm)

51.   Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S. (2015).
Stateful STT-MRAM-Based Logic for Beyond–Von Neumann Computing.
In T. Brozek, K. Iniewski (Eds.), Micro- and Nanoelectronics: Emerging Device Challenges and Solutions (pp. 221–250). CRC Press. https://doi.org/10.1201/b17597-11 (reposiTUm)

50.   Filipovic, L., Selberherr, S. (2015).
Stress Considerations in Thin Films for CMOS-Integrated Gas Sensors.
In Y. Omura, J. A. Martino, J.-P. Raskin, S. Selberherr, H. Ishii, F. Gamiz, B.-Y. Nguyen (Eds.), ECS Transactions (pp. 243–250). ECS Transactions. https://doi.org/10.1149/06605.0243ecst (reposiTUm)

49.   Ghosh, J., Osintsev, D., Sverdlov, V., Selberherr, S. (2015).
Variation of Spin Lifetime With Spin Injection Orientation in Strained Thin Silicon Films.
In Y. Omura, J. A. Martino, J.-P. Raskin, S. Selberherr, H. Ishii, F. Gamiz, B.-Y. Nguyen (Eds.), ECS Transactions (pp. 233–240). ECS Transactions. https://doi.org/10.1149/06605.0233ecst (reposiTUm)

48.   Makarov, A., Sverdlov, V., Selberherr, S. (2014).
Composite Magnetic Tunnel Junctions for Fast Memory Devices and Efficient Spin-Torque Nano-Oscillators.
In G. Lee (Ed.), Future Information Engineering. WITPRESS. https://doi.org/10.2495/icie130451 (reposiTUm)

47.   Sverdlov, V., Ghosh, J., Osintsev, D., Selberherr, S. (2014).
Modeling Silicon Spintronics.
In Y. B. Senichenkov, V. Korablev, I. Chernorytski, N. Korovkin, S. Pozdnjkov, K. Ntalianis (Eds.), Recent Advances in Mathematical Methods in Applied Sciences (pp. 195–198). Mathematics and Computers in Science and Engineering Series | 32. (reposiTUm)

46.   Filipovic, L., Selberherr, S., Mutinati, G. C., Brunet, E., Steinhauer, S., Köck, A., Teva, J., Kraft, J., Siegert, J., Schrank, F., Gspan, C., Grogger, W. (2014).
Modeling and Analysis of Spray Pyrolysis Deposited SnO2 Films for Gas Sensors.
In G.-C. Yang, S.-L. Ao, L. Gelman (Eds.), Transactions on Engineering Technologies (pp. 295–310). Springer. https://doi.org/10.1007/978-94-017-8832-8_22 (reposiTUm)

45.   Osintsev, D., Sverdlov, V., Selberherr, S. (2014).
Uniaxial Shear Strain as a Mechanism to Increase Spin Lifetime in Thin Film of a SOI-Based Silicon Spin FETs.
In A. Nazarov, F. Balestra, V. Kilchytska, D. Flandre (Eds.), Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting (pp. 127–149). Springer International Publishing. https://doi.org/10.1007/978-3-319-08804-4_7 (reposiTUm)

44.   Weinbub, J., Rupp, K., Selberherr, S. (2013).
A Flexible Dynamic Data Structure for Scientific Computing.
In G.-C. Yang, S.-L. Ao, L. Gelman (Eds.), Lecture Notes in Electrical Engineering (pp. 565–577). Springer. https://doi.org/10.1007/978-94-007-6190-2_43 (reposiTUm)

43.   Weinbub, J., Rupp, K., Selberherr, S. (2013).
A Lightweight Task Graph Scheduler for Distributed High-Performance Scientific Computing.
In P. Manninen, P. Öster (Eds.), Applied Parallel and Scientific Computing (pp. 563–566). Springer Berlin Heidelberg. https://doi.org/10.1007/978-3-642-36803-5_47 (reposiTUm)

42.   Rodríguez, J., Weinbub, J., Pahr, D., Rupp, K., Selberherr, S. (2013).
Distributed High-Performance Parallel Mesh Generation With ViennaMesh.
In P. Manninen, P. Öster (Eds.), Applied Parallel and Scientific Computing (pp. 548–552). Springer Berlin Heidelberg. https://doi.org/10.1007/978-3-642-36803-5_44 (reposiTUm)

41.   Makarov, A., Sverdlov, V., Selberherr, S. (2013).
Magnetic Tunnel Junctions With a Composite Free Layer: A New Concept for Future Universal Memory.
In S. Luryi, J. Xu, A. Zaslavsky (Eds.), Future Trends in Microelectronics - Frontiers and Innovations (pp. 93–101). John Wiley, Sons. (reposiTUm)

40.   Osintsev, D., Sverdlov, V., Selberherr, S. (2013).
Spin Lifetime Enhancement by Shear Strain in Thin Silicon-On-Insulator Films.
In Y. Omura, F. Gamiz, B.-Y. Nguyen, H. Ishii, J. A. Martino, S. Selberherr, J.-P. Raskin (Eds.), ECS Transactions (pp. 203–208). ECS Transactions. https://doi.org/10.1149/05305.0203ecst (reposiTUm)

39.   Filipovic, L., Selberherr, S. (2012).
Chapter 11. A Two-Dimensional Lorentzian Distribution for an Atomic Force Microscopy Simulator.
In K. K. Sabelfeld, I. Dimov (Eds.), Monte Carlo Methods and Applications (pp. 97–104). De Gruyter. https://doi.org/10.1515/9783110293586.97 (reposiTUm)

38.   Kysenko, V., Rupp, K., Marchenko, O., Selberherr, S., Anisimov, A. (2012).
GPU-Accelerated Non-Negative Matrix Factorization for Text Mining.
In G. Bouma, A. Ittoo, E. Metais, H. Wortmann (Eds.), Natural Language Processing and Information Systems (pp. 158–163). Springer Berlin Heidelberg. https://doi.org/10.1007/978-3-642-31178-9_15 (reposiTUm)

37.   Schwaha, P., Nedjalkov, M., Selberherr, S., Dimov, I. (2012).
Monte Carlo Investigations of Electron Decoherence Due to Phonons.
In K. K. Sabelfeld, I. Dimov (Eds.), Monte Carlo Methods and Applications (pp. 203–211). De Gruyter. (reposiTUm)

36.   Windbacher, T., Sverdlov, V., Selberherr, S. (2011).
Classical Device Modeling.
In D. Vasileska, S. M. Goodnick (Eds.), Nano-Electronic Devices (pp. 1–96). Springer New York. https://doi.org/10.1007/978-1-4419-8840-9_1 (reposiTUm)

35.   Makarov, A., Sverdlov, V., Selberherr, S. (2011).
Modeling of the SET and RESET Process in Bipolar Resistive Oxide-Based Memory Using Monte Carlo Simulations.
In I. Dimov, S. Dimova, N. T. Kolkovska (Eds.), Numerical Methods and Applications (pp. 87–94). Springer Berlin Heidelberg. https://doi.org/10.1007/978-3-642-18466-6_9 (reposiTUm)

34.   Osintsev, D., Sverdlov, V., Stanojevic, Z., Makarov, A., Weinbub, J., Selberherr, S. (2011).
Properties of Silicon Ballistic Spin Fin-Based Field-Effect Transistors.
In Y. Omura, H. Ishii, B.-Y. Nguyen, S. Selberherr, F. Gamiz, J. A. Martino, J.-P. Raskin (Eds.), ECS Transactions (pp. 277–282). ECS Transactions. https://doi.org/10.1149/1.3570806 (reposiTUm)

33.   Nedjalkov, M., Selberherr, S., Dimov, I. (2011).
Stochastic Algorithm for Solving the Wigner-Boltzmann Correction Equation.
In I. Dimov, S. Dimova, N. T. Kolkovska (Eds.), Numerical Methods and Applications (pp. 95–102). Springer Berlin Heidelberg. https://doi.org/10.1007/978-3-642-18466-6_10 (reposiTUm)

32.   Windbacher, T., Sverdlov, V., Selberherr, S. (2010).
Biotin-Streptavidin Sensitive BioFETs and Their Properties.
In A. Fred, J. Filipe, H. Gamboa (Eds.), Biomedical Engineering Systems and Technologies (pp. 85–95). Springer Berlin Heidelberg. https://doi.org/10.1007/978-3-642-11721-3_6 (reposiTUm)

31.   Sverdlov, V., Baumgartner, O., Windbacher, T., Selberherr, S. (2010).
Silicon for Spintronic Applications: Strain-Enhanced Valley Splitting.
In S. Luryi, J. Xu, A. Zaslavsky (Eds.), Future Trends in Microelectronics (pp. 281–291). John Wiley, Sons. (reposiTUm)

30.   Heinzl, R., Schwaha, P., Stimpfl, F., Selberherr, S. (2009).
Concepts for High-Perfomance Scientific Computing.
In J. Filipe, B. Shishkov, M. Helfert, L. A. Maciaszek (Eds.), Communications in Computer and Information Science (pp. 89–100). Springer. https://doi.org/10.1007/978-3-540-88655-6_7 (reposiTUm)

29.   Spevak, M., Heinzl, R., Schwaha, P., Selberherr, S. (2007).
A Computational Framework for Topological Operations.
In B. Kaagström, E. Elmroth, J. Jackson, J. Wasniewski (Eds.), Applied Parallel Computing. State of the Art in Scientific Computing (pp. 781–790). Springer Berlin Heidelberg. https://doi.org/10.1007/978-3-540-75755-9_95 (reposiTUm)

28.   Heinzl, R., Spevak, M., Schwaha, P., Selberherr, S. (2007).
A High Performance Generic Scientific Simulation Environment.
In B. Kaagström, E. Elmroth, J. Dongarra, J. Wasniewski (Eds.), Applied Parallel Computing. State of the Art in Scientific Computing (pp. 996–1005). Springer Berlin Heidelberg. https://doi.org/10.1007/978-3-540-75755-9_117 (reposiTUm)

27.   Riedling, K., Selberherr, S. (2007).
A Publication Database for Research Documentation and Performance Evaluation.
In Innovations 2007 (pp. 365–380). International Network for Engineering Education and Research (iNEER). (reposiTUm)

26.   Wittmann, R., Uppal, S., Hoessinger, A., Cervenka, J., Selberherr, S. (2006).
A Study of Boron Implantation Into High Ge Content SiGe Alloys.
In D. Harame, J. Boquet, M. Caymax, J. Cressler, H. Iwai, S. Koester, G. Masini, J. Murota, A. Reznicek, K. Rim, B. Tillack, S. Zaima (Eds.), ECS Transactions (pp. 667–676). ECS Transactions. https://doi.org/10.1149/1.2355862 (reposiTUm)

25.   Karlowatz, G., Ungersböck, S. E., Wessner, W., Kosina, H., Selberherr, S. (2006).
Analysis of Hole Transport in Arbitrarily Strained Germanium.
In D. Harame, J. Boquet, M. Caymax, J. Cressler, H. Iwai, S. Koester, G. Masini, J. Murota, A. Reznicek, K. Rim, B. Tillack, S. Zaima (Eds.), ECS Transactions (pp. 443–450). ECS Transactions. https://doi.org/10.1149/1.2355842 (reposiTUm)

24.   Kosina, H., Selberherr, S. (2006).
Device Simulation Demands of Upcoming Microelectronics Devices.
In H. Iwai, Y. Nishida, M. Shur, H. Wong (Eds.), International Journal of High Speed Electronics and Systems (pp. 115–136). World Scientific Publishing Co. https://doi.org/10.1142/s0129156406003576 (reposiTUm)

23.   Karner, M., Gehring, A., Holzer, S., Kosina, H., Selberherr, S. (2006).
Efficient Calculation of Lifetime Based Direct Tunneling Through Stacked Dielectrics.
In S. Kar, S. De Gendt, M. Houssa, D. Landheer, D. Misra, W. Tsai (Eds.), ECS Transactions (pp. 693–703). ECS Transactions. https://doi.org/10.1149/1.2209316 (reposiTUm)

22.   Ungersboeck, E., Sverdlov, V., Kosina, H., Selberherr, S. (2006).
Low-Field Electron Mobility in Stressed UTB SOI MOSFETs for Different Substrate Orientations.
In D. Harame, J. Boquet, M. Caymax, J. Cressler, H. Iwai, S. Koester, G. Masini, J. Murota, A. Reznicek, K. Rim, B. Tillack, S. Zaima (Eds.), ECS Transactions (pp. 45–54). ECS Transactions. https://doi.org/10.1149/1.2355793 (reposiTUm)

21.   Ceric, H., Heinzl, R., Hollauer, C., Grasser, T., Selberherr, S. (2006).
Microstructure and Stress Aspects of Electromigration Modeling.
In Stress-Induced Phenomena in Metallization (pp. 262–268). American Institute of Physics. (reposiTUm)

20.   Ungersboeck, E., Sverdlov, V., Kosina, H., Selberherr, S. (2006).
Modeling of Advanced Semiconductor Devices.
In J. A. Diniz, P. French, N. Morimoto, J. W. Swart, D. De Lima Monteiro (Eds.), ECS Transactions (pp. 207–216). ECS Transactions. https://doi.org/10.1149/1.2813493 (reposiTUm)

19.   Karner, M., Holzer, S., Gös, W., Vasicek, M., Wagner, M., Kosina, H., Selberherr, S. (2006).
Numerical Analysis of Gate Stacks.
In S. Kar, S. De Gendt, M. Houssa, H. Iwai, D. Landheer, D. Misra (Eds.), ECS Transactions (pp. 299–308). ECS Transactions. https://doi.org/10.1149/1.2355721 (reposiTUm)

18.   Gehring, A., Selberherr, S. (2006).
Tunneling Models for Semiconductor Device Simulation.
In Handbook of Theoretical and Computational Nanotechnology (pp. 469–543). American Scientific Publishers. (reposiTUm)

17.   Sverdlov, V., Kinkhabwala, Y., Kaplan, D., Korotkov, A. N., Kosina, H., Selberherr, S. (2005).
Shot Noise Suppression and Enhancement at 2D Hopping and in Single-Electron Arrays.
In Unsolved Problems of Noise and Fluctuations (pp. 177–182). American Institute of Physics. (reposiTUm)

16.   Hollauer, C., Ceric, H., Selberherr, S. (2005).
Three-Dimensional Simulation of Thermal Oxidation and the Influence of Stress.
In ECS Meeting Abstracts (pp. 734–734). ECS Transactions. https://doi.org/10.1149/ma2005-02/19/734 (reposiTUm)

15.   Wittmann, R., Hössinger, A., Selberherr, S. (2004).
Calibration for the Monte Carlo Simulation of Ion Implantation in Relaxed SiGe.
In SiGe: Materials, Processing, and Devices (pp. 181–192). ECS Transactions. (reposiTUm)

14.  R. Sabelka, C. Harlander, S. Selberherr:
"Interconnects and Propagation of High Frequency Signals";
in: "Predictive Simulation of Semiconductor Processing, Springer Series in Materials Science", 72; J. Dabrowski, E. Weber (ed.); Springer Berlin Heidelberg, 2004, ISBN: 3-540-20481-4, 357 - 385. https://doi.org/10.1007/978-3-662-09432-7_9

13.  H. Kosina, M. Nedjalkov, S. Selberherr:
"A Stable Backward Monte Carlo Method for the Solution of the Boltzmann Equation";
in: "Large-Scale Scientific Computing, Lecture Notes in Computer Science", 2907; I. Lirkov, S. Margenov, J. Wasniewski, P. Yalamov (ed.); Springer Berlin Heidelberg, 2003, ISBN: 3-540-21090-3, 170 - 177. https://doi.org/10.1007/978-3-540-24588-9_18

12.  M. Nedjalkov, H. Kosina, S. Selberherr:
"A Weight Decomposition Approach to the Sign Problem in Wigner Transport Simulations";
in: "Large-Scale Scientific Computing, Lecture Notes in Computer Science", 2907; I. Lirkov, S. Margenov, J. Wasniewski, P. Yalamov (ed.); Springer Berlin Heidelberg, 2003, ISBN: 3-540-21090-3, 178 - 184. https://doi.org/10.1007/978-3-540-24588-9_19

11.  S. Smirnov, H. Kosina, M. Nedjalkov, S. Selberherr:
"A Zero Field Monte Carlo Algorithm Accounting for the Pauli Exclusion Principle";
in: "Large-Scale Scientific Computing, Lecture Notes in Computer Science", 2907; I. Lirkov, S. Margenov, J. Wasniewski, P. Yalamov (ed.); Springer Berlin Heidelberg, 2003, ISBN: 3-540-21090-3, 185 - 193. https://doi.org/10.1007/978-3-540-24588-9_20

10.  T. Grasser, H. Kosina, S. Selberherr:
"Hot Carrier Effects within Macroscopic Transport Models";
in: "Advanced Device Modeling and Simulation", T. Grasser (ed.); World Scientific Publishing Co., Singapore, 2003, ISBN: 9-812-38607-6, 173 - 201.

9.  T. Grasser, S. Selberherr:
"Current Transport Models for Engineering Applications";
in: "Future Trends in Microelectronics", S. Luryi, J. Xu, A. Zaslavsky (ed.); John Wiley & Sons, 2002, (invited), ISBN: 0-471-21247-4, 87 - 98.

8.  H. Kosina, M. Nedjalkov, S. Selberherr:
"Monte Carlo Analysis of the Small-Signal Response of Charge Carriers";
in: "Large-Scale Scientific Computing, Lecture Notes in Computer Science", 2179; S. Margenov, J. Wasniewski, P. Yalamov (ed.); Springer Berlin Heidelberg, 2001, ISBN: 3-540-43043-1, 175 - 182. https://doi.org/10.1007/3-540-45346-6_17

7.  E. Langer, S. Selberherr:
"Advanced Models, Applications, and Software Systems for High Performance Computing-Application in Microelectronics";
in: "High Performance Scientific and Engineering Computing, Proceedings of the International FORTWIHR Conference on HPSEC", 8; H.J. Bungartz, F. Durst, C. Zenger (ed.); Springer, 1999, (invited), ISBN: 3-540-65730-4, 291 - 308. https://doi.org/10.1007/978-3-642-60155-2_25

6.  C. Wasshuber, H. Kosina, S. Selberherr:
"Single-Electron Memories with Terabit Capacity and Beyond";
in: "Future Trends in Microelectronics", S. Luryi, J. Xu, A. Zaslavsky (ed.); John Wiley & Sons, 1999, (invited), ISBN: 0-471-32183-4, 313 - 322.

5.  S. Selberherr, C. Fischer, S. Halama, C. Pichler, G. Rieger, G. Schrom, T. Simlinger:
"Device Structures and Device Simulation Techniques";
in: "Low-Power HF Microelectronics", A.S. Machado (ed.); The Institution of Electrical Engineers, 1996, (invited), ISBN: 0-85296-874-4, 57 - 83. https://doi.org/10.1049/PBCS008E_ch2

4.  E. Langer, S. Selberherr:
"Prozeßsimulation: Stand der Technik";
in: "Festkörperprobleme 36", R. Helbig (ed.); Vieweg, 1996, (invited), ISBN: 3-528-08043-4, 203 - 243.

3.   Kosina, H., Wimmer, K., Fischer, C., Selberherr, S. (1991).
Simulation of ULSI Processes and Devices.
In M. Doyama (Ed.), Computer Aided Innovation of New Materials (pp. 723–728). North Holland Publishing Company. (reposiTUm)

2.   Selberherr, S. (1986).
On Modeling MOS-Devices.
In W. L. Engl (Ed.), Process and Device Modeling (pp. 265–299). North Holland Publishing Company. (reposiTUm)

1.   Selberherr, S., Schütz, A., Pötzl, H. (1983).
Two-Dimensional MOS-Transistor Modeling.
In P. Antognetti, D. Antoniadis, R. W. Dutton, W. G. Oldham (Eds.), Process and Device Simulation for MOS-VLSI Circuits (pp. 490–581). Martinus Nijhoff. (reposiTUm)

Talks and Poster Presentations (with Proceedings-Entry)

1243.   Bendra, M., Fiorentini, S., Selberherr, S., Goes, W., Sverdlov, V. (2023).
A Multi-Level Cell for Ultra-Scaled STT-MRAM Realized by Back-Hopping.
In 9th Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS) 2023 (pp. 1–2), Tarragona, Spain. (reposiTUm)

1242.   Fiorentini, S., Pruckner, B., Goes, W., Selberherr, S., Sverdlov, V. (2023).
Accurate Torque Evaluation in Elongated Ultra-Scaled STT-MRAM Devices.
In 243rd ECS Meeting with the Eighteenth International Symposium on Solid Oxide Fuel Cells May 28, 2023 - June 2, 2023 Boston, USA (p. 1), Boston, MA, United States. https://doi.org/10.1149/MA2023-01331859mtgabs (reposiTUm)

1241.   Bendra, M., Fiorentini, S., Ender, J., Lacerda de Orio, R., Hadamek, T., Jorstad, N., Pruckner, B., Selberherr, S., Goes, W., Sverdlov, V. (2023).
Back-Hopping in Ultra-Scaled MRAM Cells.
In Proceedings of the International Convention MIPRO (pp. 159–162), Opatija, Croatia. https://doi.org/10.23919/MIPRO57284.2023.10159764 (reposiTUm)

1240.   Sverdlov, V., Selberherr, S. (2023).
Charge and Spin Transport in Semiconductor Devices.
In 2023 IEEE 15th International Conference on ASIC (ASICON) (pp. 1–4), Nanjing, China. https://doi.org/10.1109/ASICON58565.2023.10396645 (reposiTUm)

1239.   Sverdlov, V., Bendra, M., Pruckner, B., Fiorentini, S., Goes, W., Selberherr, S. (2023).
Comprehensive Modeling of Advanced Composite Magnetoresistive Devices.
In Proceedings of the IEEE European Solid-State Device Research Conference (ESSDERC) (pp. 93–96), Lisbon, Portugal. https://doi.org/10.1109/ESSDERC59256.2023.10268508 (reposiTUm)

1238.   Jorstad, N., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V. (2023).
Micromagnetic Modeling of SOT-MRAM Dynamics.
In Digital Book of Abstracts: 13th International Symposium on Hysteresis Modeling and Micromagnetics (HMM 2023) (p. 1), Vienna, Austria. (reposiTUm)

1237.   Bendra, M., Lacerda de Orio, R., Goes, W., Sverdlov, V., Selberherr, S. (2023).
Modeling of Ultra-Scaled Magnetoresistive Random Access Memory.
In Proceedings of the 5th International Conferenceon Microelectronic Devices and Technologies (MicDAT '2023) (pp. 28–30), Funchal (Madeira Island), Portugal. (reposiTUm)

1236.   Sverdlov, V., Bendra, M., Goes, W., Fiorentini, S., Garcia-Barrientos, A., Selberherr, S. (2023).
Multi-Level Operation in Ultra-Scaled MRAM.
In 2023 IEEE Latin American Electron Devices Conference (LAEDC) Proceedings, Puebla, Mexico. https://doi.org/10.1109/LAEDC58183.2023.10209117 (reposiTUm)

1235.   Hadamek, T., Jorstad, N., Goes, W., Selberherr, S., Sverdlov, V. (2023).
Numerical Study of Two-Terminal SOT-MRAM.
In Digital Book of Abstracts: 13th International Symposium on Hysteresis Modeling and Micromagnetics (HMM 2023) (p. 1), Vienna, Austria. (reposiTUm)

1234.   Bendra, M., Fiorentini, S., Selberherr, S., Goes, W., Sverdlov, V. (2023).
Simulation of Spin-Torque and Magnetization Dynamics in STT-MRAM Multi-Level Cells.
In Digital Book of Abstracts: 13th International Symposium on Hysteresis Modeling and Micromagnetics (HMM 2023) (p. 1), Vienna, Austria. (reposiTUm)

1233.   Jorstad, N., Goes, W., Selberherr, S., Sverdlov, V. (2023).
Spin Drift-Diffusion Boundary Conditions for FEM Modeling of Multilayer SOT Devices.
In Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 357–360), Kobe, Japan. https://doi.org/10.23919/SISPAD57422.2023.10319650 (reposiTUm)

1232.   Hadamek, T., Jorstad, N., Goes, W., Selberherr, S., Sverdlov, V. (2023).
Study of Self-Heating and Its Effects in SOT-STT-MRAM.
In 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 337–340), Kobe, Japan. https://doi.org/10.23919/SISPAD57422.2023.10319549 (reposiTUm)

1231.   Bendra, M., Fiorentini, S., Hadamek, T., Jorstad, N., Ender, J., Lacerda de Orio, R., Selberherr, S., Goes, W., Sverdlov, V. (2023).
Switching Composite Free Layers in Ultra-Scaled MRAM Cells.
In 22nd International Winterschool - New Developments in Solid State Physics - Abstract Book (pp. 184–185), Mauterndorf, Austria. (reposiTUm)

1230.   Pruckner, B., Fiorentini, S., Jorstad, N., Hadamek, T., Selberherr, S., Gös, W., Sverdlov, V. (2023).
Switching Performance of Mo-Based pMTJ and dsMTJ Structures.
In Book of Abstracts of the International Workshop on Computational Nanotechnology (pp. 144–145), Barcelona, Spain. (reposiTUm)

1229.   Bendra, M., Jorstad, N., Lacerda de Orio, R., Selberherr, S., Goes, W., Sverdlov, V. (2023).
Unified Modeling of Ultra-Scaled STT-MRAM Cells: Harnessing Parasitic Effects for Enhanced Data Storage Dynamics.
In IEDM 2023 Special MRAM poster session, San Francisco, United States. (reposiTUm)

1228.   Selberherr, S., Sverdlov, V. (2022).
About Electron Transport and Spin Control in Semiconductor Devices.
In SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet, Granada, Spain. (reposiTUm)

1227.   Orio, R., Ender, J., Goes, W., Fiorentini, S., Selberherr, S., Sverdlov, V. (2022).
About the Switching Energy of a Magnetic Tunnel Junction Determined by Spin-Orbit Torque and Voltage-Controlled Magnetic Anisotropy.
In 2022 IEEE Latin American Electron Devices Conference (LAEDC), Puebla, Mexico, Mexico. https://doi.org/10.1109/laedc54796.2022.9908222 (reposiTUm)

1226.   Sverdlov, V., Bendra, M., Fiorentini, S., Ender, J., Lacerda de Orio, R., Hadamek, T., Loch, W., Jorstad, N., Goes, W., Selberherr, S. (2022).
Advanced Modeling of Emerging Devices for Digital Spintronics.
In 2nd International Conference on Nanoscience and Nanotechnology (p. 40), Dubai, United Arab Emirates. (reposiTUm)

1225.   Sverdlov, V., Bendra, M., Fiorentini, S., Ender, J., Lacerda de Orio, R., Hadamek, T., Loch, W., Jorstad, N., Goes, W., Selberherr, S. (2022).
Advanced Modeling of Emerging Magneto-Resistive Memory.
In NANOMEET 2022 2nd International Meet, Expo on Nanotechnology (pp. 78–79), Edinburgh, United Kingdom. (reposiTUm)

1224.   Ender, J., Fiorentini, S., Orio, R., Hadámek, T., Bendra, M., Goes, W., Selberherr, S., Sverdlov, V. (2022).
Advances in Modeling Emerging Magnetoresistive Random Access Memories: From Finite Element Methods to Machine Learning Approaches.
In Proc. SPIE 12157, International Conference on Micro- and Nano-Electronics 2021, Zvenigorod, Russian Federation. https://doi.org/10.1117/12.2624595 (reposiTUm)

1223.   Fiorentini, S., Ender, J., Orio, R., Selberherr, S., Goes, W., Sverdlov, V. (2022).
Comprehensive Evaluation of Torques in Ultra Scaled MRAM Devices.
In SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet (pp. 11–12), Granada, Spain. (reposiTUm)

1222.   Fiorentini, S., Loch, W., Bendra, M., Jørstad, N., Ender, J., Orio, R., Hadámek, T., Goes, W., Sverdlov, V., Selberherr, S. (2022).
Design Analysis of Ultra-Scaled MRAM Cells.
In Proceedings of 2022 IEEE 16th International Conference on Solid-State, Integrated Circuit Technology (ICSICT), Nanjing, China, China. (reposiTUm)

1221.   Sverdlov, V., Seiler, H., El-Sayed, A., Illarionov, Y., Kosina, H., Selberherr, S. (2022).
Edge Modes in Narrow Nanoribbons of Transition Metal Dichalcogenides in a Topological 1T.
In International Conference on Physics and its Application 2022 (pp. 36–37), San Francisco, USA. (reposiTUm)

1220.   Ceric, H., de Orio, R., Selberherr, S. (2022).
Electromigration Degradation of Gold Interconnects: A Statistical Study.
In 2022 IEEE International Interconnect Technology Conference (IITC), San Jose, USA, United States. https://doi.org/10.1109/iitc52079.2022.9881313 (reposiTUm)

1219.   Sverdlov, V., Bendra, M., Fiorentini, S., Ender, J., Orio, R., Hadámek, T., Loch, W., Jørstad, N., Goes, W., Selberherr, S. (2022).
Emerging Devices for Digital Spintronics.
In 2nd Global Conference, Expo on Nanotechnology, Nanoscience (pp. 32–33), online, INT. (reposiTUm)

1218.   Fiorentini, S., Bendra, M., Ender, J., Goes, W., Sverdlov, V., Selberherr, S. (2022).
Evaluating Spin Transfer Torques in Multilayered Magnetic Tunnel Junctions and Spin Valves.
In Workshop on Innovative Nanoscale Devices and Systems. Book of Abstracts (pp. 44–45), Lihue, HI, United States. (reposiTUm)

1217.   Jorstad, N., Fiorentini, S., Ender, J., Lacerda de Orio, R., Hadamek, T., Loch, W., Bendra, M., Goes, W., Selberherr, S., Sverdlov, V. (2022).
Finite Element Modeling of Spin-Orbit Torques.
In Proceedings of the Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS 2022)) (pp. 1–2), Udine, Italy. (reposiTUm)

1216.   Ceric, H., Orio, R., Selberherr, S. (2022).
Impact of Gold Interconnect Microstructure on Electromigration Failure Time Statistics.
In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 301–303), Milan, Italy. (reposiTUm)

1215.   Bendra, M., Fiorentini, S., Ender, J., Orio, R., Hadámek, T., Loch, W., Jørstad, N., Goes, W., Selberherr, S. (2022).
Interface Effects in Ultra-Scaled MRAM Cells.
In Letters from the 8th Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS) 2022 (p. 108373), Udine, Italy. https://doi.org/10.1016/j.sse.2022.108373 (reposiTUm)

1214.   Ceric, H., de Orio, R., Selberherr, S. (2022).
Microstructural Impact on Electromigration Reliability of Gold Interconnects.
In SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet (pp. 178–179), Granada, Spain. (reposiTUm)

1213.   Sverdlov, V., Bendra, M., Fiorentini, S., Ender, J., Orio, R., Hadámek, T., Loch, W., Jørstad, N., Selberherr, S. (2022).
Modeling Advanced Magnetoresistive Memory: A Journey From Finite Element Methods to Machine Learning Approaches.
In 2nd Global Webinar on Nanoscience, Nanotechnology, online, INT. (reposiTUm)

1212.   Fiorentini, S., Bendra, M., Ender, J., Hadamek, T., Loch, W., Jorstad, N., Lacerda de Orio, R., Goes, W., Selberherr, S., Sverdlov, V. (2022).
Modeling Advanced Spintronic Based Magnetoresistive Memory.
In International Conference on Microwave, THz Technologies, Wireless Communications and OptoElectronics (IRPhE 2022) (pp. 49–52), Yerevan, Armenia. https://doi.org/10.1049/icp.2022.2795 (reposiTUm)

1211.   Sverdlov, V., Loch, W., Bendra, M., Fiorentini, S., Ender, J., Orio, R., Hadámek, T., Jorstad, N., Goes, W., Selberherr, S. (2022).
Modeling Approach to Ultra-Scaled MRAM Cells.
In Book of Abstracts of the International Meet On Applied Science, Engineering and Technology (ASETMEET) (pp. 7–8), Taastrup, Copenhagen. (reposiTUm)

1210.   Jørstad, N., Fiorentini, S., Selberherr, S., Goes, W., Sverdlov, V. (2022).
Modeling Interfacial and Bulk Spin-Orbit Torques.
In Book of Abstracts of the International Conference on Nanostructured Materials (NANO), Sevilla, Spain. (reposiTUm)

1209.   Hadámek, T., Goes, W., Selberherr, S., Sverdlov, V. (2022).
Modeling Thermal Effects in STT-MRAM.
In SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet (pp. 132–133), Granada, Spain. (reposiTUm)

1208.   Bendra, M., Loch, W., Jorstad, N., Fiorentini, S., Selberherr, S., Gös, W., Sverdlov, V. (2022).
Modeling Ultra-Scaled Multi-Layer STT-MRAM Cells: A Unified Spin and Charge Drift-Diffusion Approach.
In Special MRAM poster session IEDM (pp. 18–19), San Francisco, CA, United States. (reposiTUm)

1207.   Loch, W., Selberherr, S., Sverdlov, V. (2022).
Simulation of Novel MRAM Devices With Enhanced Performance.
In Book of Abstracts of the International Conference on Nanostructured Materials (NANO), Sevilla, Spain. (reposiTUm)

1206.   Fiorentini, S., Bendra, M., Ender, J., Orio, R., Goes, W., Selberherr, S., Sverdlov, V. (2022).
Spin Torques in ULTRA-Scaled MRAM Devices.
In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 348–351), Milan, Italy. (reposiTUm)

1205.   Fiorentini, S., Ender, J., Selberherr, S., Goes, W., Sverdlov, V. (2022).
Spin Transfer Torque Evaluation Based on Coupled Spin and Charge Transport: A Finite Element Method Approach.
In The 26th World Multi-Conference on Systemics, Cybernetics and Informatics: WMSCI 2022. Proceedings Volume II (pp. 40–44), online, INT. (reposiTUm)

1204.   Bendra, M., Fiorentini, S., Ender, J., Orio, R., Hadámek, T., Loch, W., Jørstad, N., Selberherr, S., Goes, W., Sverdlov, V. (2022).
Spin Transfer Torques in Ultra-Scaled MRAM Cells.
In 2022 45th Jubilee International Convention on Information, Communication and Electronic Technology (MIPRO) (pp. 129–132), Opatija, Croatia. (reposiTUm)

1203.   Ceric, H., Lacerda de Orio, R., Selberherr, S. (2022).
Statistical Study of Electromigration in Gold Interconnects.
In 2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) (pp. 1–5), Singapore, Singapore. https://doi.org/10.1109/IPFA55383.2022.9915762 (reposiTUm)

1202.   Hadámek, T., Fiorentini, S., Bendra, M., Orio, R., Loch, W., Jorstad, N., Selberherr, S., Goes, W., Sverdlov, V. (2022).
Temperature Modeling in STT-MRAM:A Fully Three-Dimensional Finite Element Approach.
In Book of Abstracts of the International Conference on Nanostructured Materials (NANO), Sevilla, Spain. (reposiTUm)

1201.   El-Sayed, A., Seiler, H., Kosina, H., Selberherr, S., Sverdlov, V. (2021).
Ab-Initio Calculations of Edge States in Topological 1T′ MoS2 Nanoribbons.
In WINDS Book of Abstracts (pp. 79–80), Kona. (reposiTUm)

1200.   Ender, J., Fiorentini, S., Orio, R., Hadámek, T., Bendra, M., Goes, W., Selberherr, S., Sverdlov, V. (2021).
Advanced Modeling of Emerging MRAM: From Finite Element Methods to Machine Learning Approaches.
In Proceedings of the International Conference Micro- and Nanoelectronics (ICMNE), Moscow-Zvenigorod. (reposiTUm)

1199.   Ender, J., Fiorentini, S., Selberherr, S., Goes, W., Sverdlov, V. (2021).
Advanced Modeling of Emerging Nonvolatile Magnetoresistive Devices.
In Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN 2021) (pp. 45–46). (reposiTUm)

1198.   Hadámek, T., Selberherr, S., Goes, W., Sverdlov, V. (2021).
Asymmetry of Current-Induced Heating in Magnetic Tunnel Junctions.
In Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN 2021) (pp. 49–50). (reposiTUm)

1197.   Sverdlov, V., El-Sayed, A., Kosina, H., Selberherr, S. (2021).
Ballistic Conductance, K. P Hamiltonian, Nanoribbons, Subbands, Topological Insulators (TIs), Topologically Protected Edge States.
In Proceedings of the European Solid-State Device Research Conference (ESSDERC), TEDbrief Special Edition, Montreux, Austria. (reposiTUm)

1196.   Klemenschits, X., Selberherr, S., Filipovic, L. (2021).
Combined Process Simulation and Emulation of an SRAM Cell of the 5nm Technology Node.
In 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Dallas, TX, United States. https://doi.org/10.1109/sispad54002.2021.9592605 (reposiTUm)

1195.   Orio, R., Ender, J., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V. (2021).
Deterministic Spin-Orbit Switching Scheme for an Array of Perpendicular MRAM Cells Suitable for Large Scale Integration.
In Proceedings of the Trends in Magnetism Conference (TMAG), Cefalù, Italy. (reposiTUm)

1194.   Weinbub, J., Ballicchia, M., Nedjalkov, M., Selberherr, S. (2021).
Electromagnetic Coherent Electron Control.
In 2021 IEEE Latin America Electron Devices Conference (LAEDC), San Jose, Costa Rica. https://doi.org/10.1109/laedc51812.2021.9437949 (reposiTUm)

1193.   Bendra, M., Ender, J., Fiorentini, S., Hadámek, T., Orio, R., Goes, W., Selberherr, S., Sverdlov, V. (2021).
Finite Element Method Approach to MRAM Modeling.
In 2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO), Opatija, Croatia. https://doi.org/10.23919/mipro52101.2021.9597194 (reposiTUm)

1192.   Filipovic, L., Selberherr, S. (2021).
Gas Sensing With Two-Dimensional Materials Beyond Graphene.
In 2021 IEEE 32nd International Conference on Microelectronics (MIEL), Beograd. https://doi.org/10.1109/miel52794.2021.9569088 (reposiTUm)

1191.   Hadámek, T., Selberherr, S., Goes, W., Sverdlov, V. (2021).
Heating Asymmetry in Magnetoresistive Random Access Memories.
In Proceedings of the World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI) (pp. 63–66), Orlando, Florida, USA. (reposiTUm)

1190.   Ender, J., de Orio, R., Fiorentini, S., Selberherr, S., Goes, W., Sverdlov, V. (2021).
Improving Failure Rates in Pulsed SOT-MRAM Switching by Reinforcement Learning.
In Microelectronics Reliability (p. 114231), Maastricht. https://doi.org/10.1016/j.microrel.2021.114231 (reposiTUm)

1189.   Ballicchia, M., Benam, M., Nedjalkov, M., Selberherr, S., Weinbub, J. (2021).
Modeling Coulomb Interaction With a 'Wigner-Poisson' Coupling Scheme.
In International Wigner Workshop IWW 2021 Book of Abstracts (pp. 64–65), Austria. (reposiTUm)

1188.   Ender, J., Orio, R., Fiorentini, S., Selberherr, S., Goes, W., Sverdlov, V. (2021).
Reinforcement Learning Approach for Deterministic SOT-MRAM Switching.
In Spintronics XIV (pp. 1180519-1–1180519-8), San Diego, United States. https://doi.org/10.1117/12.2593937 (reposiTUm)

1187.   Ender, J., de Orio, R., Fiorentini, S., Selberherr, S., Goes, W., Sverdlov, V. (2021).
Reinforcement Learning Approach for Sub-Critical Current SOT-MRAM Switching.
In 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Dallas, TX, United States. https://doi.org/10.1109/sispad54002.2021.9592561 (reposiTUm)

1186.   Ender, J., de Orio, R., Fiorentini, S., Selberherr, S., Goes, W., Sverdlov, V. (2021).
Reinforcement Learning to Reduce Failures in SOT-MRAM Switching.
In 2021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore. https://doi.org/10.1109/ipfa53173.2021.9617362 (reposiTUm)

1185.   Ender, J., Fiorentini, S., Sverdlov, V., Goes, W., Orio, R., Selberherr, S. (2021).
Reinforcement Learning Approach for Deterministic SOT-MRAM Switching.
In Spintronics XIV, San Diego, CA, USA. https://doi.org/10.1117/12.2593937 (reposiTUm)

1184.   Fiorentini, S., Ender, J., Orio, R., Selberherr, S., Goes, W., Sverdlov, V. (2021).
Spin Drift-Diffusion Approach for the Computation of Torques in Multi-Layered Structures.
In Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN 2021) (pp. 51–52). (reposiTUm)

1183.   Fiorentini, S., Ender, J., Orio, R., Selberherr, S., Goes, W., Sverdlov, V. (2021).
Spin and Charge Drift-Diffusion Approach to Torque Computation in Magnetic Tunnel Junctions.
In 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Dallas, TX, United States. https://doi.org/10.1109/sispad54002.2021.9592559 (reposiTUm)

1182.   Fiorentini, S., Orio, R., Selberherr, S., Ender, J., Goes, W., Sverdlov, V. (2021).
Spin and Charge Drift-Diffusion Approach to Torque Computation in Spintronic Devices.
In WINDS Book of Abstracts (pp. 12–13), Kona. (reposiTUm)

1181.   Fiorentini, S., Bendra, M., Ender, J., Orio, R., Selberherr, S., Goes, W., Sverdlov, V. (2021).
Spin and Charge Drift-Diffusion in Ultra-Scaled MRAM Cells.
In Proceedings of the IEEE International Electron Devices Meeting (IEDM) Special Poster Session Dedicated to MRAM, San Francisco, CA, USA. https://doi.org/10.21203/rs.3.rs-1915307/v1 (reposiTUm)

1180.   Hadamek, T., Bendra, M., Fiorentini, S., Ender, J., de Orio, R., Goes, W., Selberherr, S., Sverdlov, V. (2021).
Temperature Increase in MRAM at Writing: A Finite Element Approach.
In 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS). https://doi.org/10.1109/eurosoi-ulis53016.2021.9560669 (reposiTUm)

1179.   Hadámek, T., Bendra, M., Fiorentini, S., Ender, J., Orio, R., Gös, W., Selberherr, S., Sverdlov, V. (2021).
Temperature Increase in STT-MRAM at Writing: A Fully Three-Dimensional Finite Element Approach.
In 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS'2021), Caen, France. https://doi.org/10.1109/EuroSOI-ULIS53016.2021.9560669 (reposiTUm)

1178.   Sverdlov, V., Selberherr, S. (2020).
A Monte Carlo Evaluation of the Current and Low Frequency Current Noise at Spin-Dependent Hopping.
In Large-Scale Scientific Computing: 12th International Conference, LSSC 2019 (pp. 446–453), Sozopol, Bulgaria. https://doi.org/10.1007/978-3-030-41032-2_51 (reposiTUm)

1177.   Sverdlov, V., El-Sayed, A., Kosina, H., Selberherr, S. (2020).
Ballistic Conductance in a Topological 1t'-MoS2 Nanoribbon.
In Proceedings of the International Symposium on Nanostructures: Physics and Technology (NANO) (pp. 200–201), Minsk, Belarus - virtual. (reposiTUm)

1176.   Fiorentini, S., Ender, J., Selberherr, S., de Orio, R., Goes, W., Sverdlov, V. (2020).
Comprehensive Modeling of Coupled Spin and Charge Transport Through Magnetic Tunnel Junctions.
In 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Bologna, Italy. https://doi.org/10.1109/eurosoi-ulis49407.2020.9365497 (reposiTUm)

1175.   Fiorentini, S., Ender, J., Mohamedou, M., Selberherr, S., Orio, R., Goes, W., Sverdlov, V. (2020).
Comprehensive Modeling of Coupled Spin-Charge Transport and Magnetization Dynamics in STT-MRAM Cells.
In Spintronics XIII (pp. 50–56), Austria. https://doi.org/10.1117/12.2567480 (reposiTUm)

1174.   Fiorentini, S., Ender, J., Mohamedou, M., Sverdlov, V., Goes, W., Orio, R., Selberherr, S. (2020).
Comprehensive Modeling of Coupled Spin-Charge Transport and Magnetization Dynamics in STT-MRAM Cells.
In Spintronics XIII, San Diego, CA, USA. https://doi.org/10.1117/12.2567480 (reposiTUm)

1173.   Fiorentini, S., Ender, J., Mohamedou, M., Orio, R., Selberherr, S., Goes, W., Sverdlov, V. (2020).
Computation of Torques in Magnetic Tunnel Junctions Through Spin and Charge Transport Modeling.
In 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan. https://doi.org/10.23919/sispad49475.2020.9241657 (reposiTUm)

1172.   Ender, J., Mohamedou, M., Fiorentini, S., Orio, R., Selberherr, S., Goes, W., Sverdlov, V. (2020).
Efficient Demagnetizing Field Calculation for Disconnected Complex Geometries in STT-MRAM Cells.
In 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan. https://doi.org/10.23919/sispad49475.2020.9241662 (reposiTUm)

1171.   Sverdlov, V., Fiorentini, S., Ender, J., Goes, W., de Orio, R., Selberherr, S. (2020).
Emerging CMOS Compatible Magnetic Memories and Logic.
In 2020 IEEE Latin America Electron Devices Conference (LAEDC), San Jose, Costa Rica. https://doi.org/10.1109/laedc49063.2020.9073332 (reposiTUm)

1170.   Klemenschits, X., Selberherr, S., Filipovic, L. (2020).
Geometric Advection Algorithm for Process Emulation.
In 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan. https://doi.org/10.23919/sispad49475.2020.9241678 (reposiTUm)

1169.   Filipovic, L., Selberher, S. (2020).
Granularity Effects in Electromigration.
In 2020 IEEE Latin America Electron Devices Conference (LAEDC), San Jose, Costa Rica. https://doi.org/10.1109/laedc49063.2020.9072963 (reposiTUm)

1168.   Fiorentini, S., Lacerda de Orio, R., Selberherr, S., Ender, J., Goes, W., Sverdlov, V. (2020).
Influence of Current Redistribution in Switching Models for Perpendicular STT-MRAM.
In ECS Meeting Abstracts (p. 1389), Honolulu, Austria. https://doi.org/10.1149/ma2020-01241389mtgabs (reposiTUm)

1167.   Filipovic, L., Selberherr, S. (2020).
Integration of Gas Sensors With CMOS Technology.
In 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), Toyama, Japan. https://doi.org/10.1109/edtm47692.2020.9117828 (reposiTUm)

1166.   Fiorentini, S., de Orio, R., Selberherr, S., Ender, J., Goes, W., Sverdlov, V. (2020).
Perpendicular STT-MRAM Switching at Fixed Voltage and at Fixed Current.
In 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), Toyama, Japan. https://doi.org/10.1109/edtm47692.2020.9117985 (reposiTUm)

1165.   de Orio, R., Ender, J., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V. (2020).
Reduced Current Spin-Orbit Torque Switching of a Perpendicularly Magnetized Free Layer.
In 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Bologna, Italy. https://doi.org/10.1109/eurosoi-ulis49407.2020.9365283 (reposiTUm)

1164.   Sverdlov, V., El-Sayed, A., Selberherr, S. (2020).
Subband Structure and Ballistic Conductance of a Molybdenum Disulfide Nanoribbon in Topological 1T' Phase: A K·p Study.
In 2020 27th International Conference on Mixed Design of Integrated Circuits and System (MIXDES). https://doi.org/10.23919/mixdes49814.2020.9155676 (reposiTUm)

1163.   Sverdlov, V., El-Sayed, A., Selberherr, S. (2020).
Subband Structure and Ballistic Conductance of a Molybdenum Disulfide Nanoribbon in Topological 1T’ Phase: A K·p Study.
In 2020 27th International Conference on Mixed Design of Integrated Circuits and System (MIXDES), Gdynia, Poland. https://doi.org/10.23919/mixdes49814.2020.9155676 (reposiTUm)

1162.   Orio, R., Makarov, A., Goes, W., Ender, J., Fiorentini, S., Selberherr, S., Sverdlov, V. (2020).
Switching of a Perpendicularly Magnetized Free-Layer by Spin-Orbit-Torques With Reduced Currents.
In Proceedings of the World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI) (pp. 58–61), Orlando, Florida, USA. (reposiTUm)

1161.   Sverdlov, V., El-Sayed, A., Selberherr, S., Kosina, H. (2020).
Topologically Protected and Conventional Subbands in a 1t'-MoS2 Nanoribbon Channel.
In 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS). https://doi.org/10.1109/eurosoi-ulis49407.2020.9365289 (reposiTUm)

1160.   Orio, R., Makarov, A., Ender, J., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V. (2019).
A Dynamical Approach to Fast and Reliable External Field Free Perpendicular Magnetization Reversal by Spin-Orbit Torques.
In Proceedings of the IEEE International Electron Devices Meeting (IEDM) Special Poster Session Dedicated to MRAM (p. 1), San Francisco, CA, USA, Austria. (reposiTUm)

1159.   Gnam, L., Manstetten, P., Quell, M., Rupp, K., Selberherr, S., Weinbub, J. (2019).
A Flexible Shared-Memory Parallel Mesh Adaptation Framework.
In 2019 19th International Conference on Computational Science and Its Applications (ICCSA), Trieste, Italy. https://doi.org/10.1109/iccsa.2019.00016 (reposiTUm)

1158.   Nedjalkov, M., Weinbub, J., Ballicchia, M., Selberherr, S., Dimov, I., Ferry, D., Rupp, K. (2019).
A Gauge-Invariant Wigner Equation for General Electromagnetic Fields.
In Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN 2019) (pp. 67–68), Evanston, IL, United States. (reposiTUm)

1157.   Aguinsky, L., Manstetten, P., Hössinger, A., Selberherr, S., Weinbub, J. (2019).
A Mathematical Extension to Knudsen Diffusion Including Direct Flux and Accurate Geometric Description.
In Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN 2019) (pp. 109–110), Evanston, IL, United States. (reposiTUm)

1156.   Sverdlov, V., Selberherr, S. (2019).
A Monte Carlo Evaluation of Current and Low Frequency Current Noise at Spin-Dependent Hopping in Magnetic Tunnel Junctions.
In Abstracts of the 12th International Conference on Large-Scale Scientific Computations (LSSC 2019) (p. 96), Sozopol, Bulgaria. (reposiTUm)

1155.   Aguinsky, L., Manstetten, P., Hössinger, A., Selberherr, S., Weinbub, J. (2019).
An Extended Knudsen Diffusion Model for Aspect Ratio Dependent Atomic Layer Etching.
In Abstracts of the International Conference on Atomic Layer Deposition (ALD) Featuring the International Workshop on Atomic Layer Etching (ALE) (p. 109), Bellevue, WA, USA. (reposiTUm)

1154.   Ceric, H., Selberherr, S., Zahedmanesh, H., Orio, R., Croes, K. (2019).
Assessment of Electromigration in Nano‐Interconnects.
In Abstracts of the International Conference on Reliability and Stress-Related Phenomena in Nanoelectronics (IRSP) (p. 7), San Jose, USA. (reposiTUm)

1153.   Selberherr, S., Filipovic, L. (2019).
CMOS Compatible Gas Sensors.
In Book of Abstracts of the International Conference on Materials Science and Engineering (p. 1), San Francisco, CA, USA. (reposiTUm)

1152.   Sverdlov, V., Selberherr, S. (2019).
CMOS Technology Compatible Magnetic Memories.
In 2019 8th International Symposium on Next Generation Electronics (ISNE), Taipei, Taiwan. https://doi.org/10.1109/isne.2019.8896421 (reposiTUm)

1151.   Filipovic, L., Selberherr, S. (2019).
CMOS-Compatible Gas Sensors.
In 2019 IEEE 31st International Conference on Microelectronics (MIEL), Beograd. https://doi.org/10.1109/miel.2019.8889585 (reposiTUm)

1150.   Sverdlov, V., Selberherr, S. (2019).
Combining Perpendicular and Shape Anisotropy for Optimal Switching of Advanced Spin-Orbit Torque Memory Cells.
In 2019 Electron Devices Technology and Manufacturing Conference (EDTM), Toyama, Japan. https://doi.org/10.1109/edtm.2019.8731330 (reposiTUm)

1149.   Fiorentini, S., Orio, R., Selberherr, S., Ender, J., Goes, W., Sverdlov, V. (2019).
Comprehensive Modeling of Switching in Perpendicular STT-MRAM.
In Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS) (pp. 107–108), Kona. (reposiTUm)

1148.   Orio, R., Makarov, A., Selberherr, S., Goes, W., Ender, J., Fiorentini, S., Sverdlov, V. (2019).
Efficient Magnetic Field Free Switching of Symmetric Perpendicular Magnetic Free Layer for Advanced SOT-MRAM.
In Proceedings of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) (pp. 152–153), Bologna, Italy. (reposiTUm)

1147.   de Orio, R., Makarov, A., Selberherr, S., Goes, W., Ender, J., Fiorentini, S., Sverdlov, V. (2019).
Efficient Magnetic Field-Free Switching of a Symmetric Perpendicular Magnetic Free Layer for Advanced SOT-MRAM.
In 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS). https://doi.org/10.1109/eurosoi-ulis45800.2019.9041920 (reposiTUm)

1146.   Klemenschits, X., Selberherr, S., Filipovic, L. (2019).
Fast Volume Evaluation on Sparse Level Sets.
In Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN 2019) (pp. 113–114), Evanston, IL, United States. (reposiTUm)

1145.   Manstetten, P., Aguinsky, L., Selberherr, S., Weinbub, J. (2019).
High-Performance Ray Tracing for Nonimaging Applications.
In Book of Abstracts of the Workshop on High Performance TCAD (WHPTCAD) (p. 20), Chicago, IL, USA. (reposiTUm)

1144.   Sverdlov, V., Selberherr, S. (2019).
Hopping in a Multiple Ferromagnetic Terminal Configuration.
In Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN 2019) (pp. 75–77), Evanston, IL, United States. (reposiTUm)

1143.   Orio, R., Selberherr, S., Sverdlov, V. (2019).
Magnetic Field-Free Deterministic Switching of a Perpendicular Magnetic Layer by Spin-Orbit Torques.
In Spintronics XII (pp. 110903F-1–110903F-6), San Diego, United States. https://doi.org/10.1117/12.2529119 (reposiTUm)

1142.   Toifl, A., Quell, M., Hössinger, A., Babayan, A., Selberherr, S., Weinbub, J. (2019).
Novel Numerical Dissipation Scheme for Level-Set Based Anisotropic Etching Simulations.
In 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy. https://doi.org/10.1109/sispad.2019.8870443 (reposiTUm)

1141.   Quell, M., Diamantopoulos, G., Hössinger, A., Selberherr, S., Weinbub, J. (2019).
Parallelized Bottom-Up Correction in Hierarchical Re-Distancing for Topography Simulation.
In Procedings of the High Performance Computing Conference (HPC) (p. 45), Borovets, Bulgaria. (reposiTUm)

1140.   Quell, M., Manstetten, P., Hössinger, A., Selberherr, S., Weinbub, J. (2019).
Parallelized Construction of Extension Velocities for the Level-Set Method.
In Proceedings of the International Conference on Parallel Processing and Applied Mathematics (PPAM) (p. 42), Bialystok, Poland. (reposiTUm)

1139.   Quell, M., Toifl, A., Hössinger, A., Selberherr, S., Weinbub, J. (2019).
Parallelized Level-Set Velocity Extension Algorithm for Nanopatterning Applications.
In 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy. https://doi.org/10.1109/sispad.2019.8870482 (reposiTUm)

1138.   Nedjalkov, M., Weinbub, J., Ballicchia, M., Selberherr, S., Dimov, I., Ferry, D., Rupp, K. (2019).
Posedness of Stationary Wigner Equation.
In Book of Abstracts of the International Wigner Workshop (IW2) (pp. 32–33), Waikoloa, Hawaii, USA. (reposiTUm)

1137.   Ballicchia, M., Nedjalkov, M., Selberherr, S., Weinbub, J. (2019).
Potentials for Single Electron State Processing.
In Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS) (pp. 111–112), Kona. (reposiTUm)

1136.   Klemenschits, X., Manstetten, P., Filipovic, L., Selberherr, S. (2019).
Process Simulation in the Browser: Porting ViennaTS Using WebAssembly.
In 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy. https://doi.org/10.1109/sispad.2019.8870374 (reposiTUm)

1135.   Orio, R., Makarov, A., Selberherr, S., Gös, W., Ender, J., Fiorentini, S., Sverdlov, V. (2019).
Robust Magnetic Field Free Switching Scheme for Perpendicular Free Layer in Advanced Spin Orbit Torque Magnetoresistive Random Access Memory.
In Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN 2019) (pp. 69–71), Evanston, IL, United States. (reposiTUm)

1134.   Orio, R., Selberherr, S., Ender, J., Fiorentini, S., Goes, W., Sverdlov, V. (2019).
Robustness of the Two-Pulse Switching Scheme for SOT-MRAM.
In Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS) (pp. 54–55), Kona. (reposiTUm)

1133.   Sverdlov, V., Selberherr, S. (2019).
Shot Noise in Magnetic Tunnel Junctions.
In Proceedings of the World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI) Volume II (pp. 19–22), Orlando, Florida, USA. (reposiTUm)

1132.   Sverdlov, V., Selberherr, S. (2019).
Spin-Based CMOS-Compatible Memories.
In 2019 IEEE 9th International Nanoelectronics Conferences (INEC), Kuching, Malaysia. https://doi.org/10.1109/inec.2019.8853848 (reposiTUm)

1131.   Sverdlov, V., Selberherr, S. (2019).
Spintronic Memories.
In Abstracts of the Energy-Materials-Nanotechnology Fall Meeting (EMN) (pp. 19–21), Orlando, USA. (reposiTUm)

1130.   Selberherr, S. (2019).
Status and Future of Solid-State Non-Volatile Memory.
In Book of Abstracts of the International Conference on Frontier Sciences (p. 97), Beijing, China. (reposiTUm)

1129.   de Orio, R., Makarov, A., Selberherr, S., Gös, W., Ender, J., Fiorentini, S., Sverdlov, V. (2019).
Switching Speedup of the Magnetic Free Layer of Advanced SOT-MRAM.
In ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC), Cracow, Poland. https://doi.org/10.1109/essderc.2019.8901780 (reposiTUm)

1128.   Aguinsky, L., Manstetten, P., Hössinger, A., Selberherr, S., Weinbub, J. (2019).
Three-Dimensional TCAD for Atomic Layer Processing.
In Book of Abstracts of the Workshop on High Performance TCAD (WHPTCAD) (p. 5), Chicago, IL, USA. (reposiTUm)

1127.   Diamantopoulos, G., Hössinger, A., Selberherr, S., Weinbub, J. (2018).
A Shared-Memory Parallel Multi-Mesh Fast Marching Method for Full and Narrow Band Re-Distancing.
In Proc. 6th European Seminar on Computing (p. 1), Pilsen, Czech Republic. (reposiTUm)

1126.   Sverdlov, V., Selberherr, S. (2018).
A Single-Spin Switch.
In Conference Abstract Book, Keelung, Taiwan. (reposiTUm)

1125.   Benam, M., Nedjalkov, M., Selberherr, S. (2018).
A Wigner Potential Decomposition in the Signed-Particle Monte Carlo Approach.
In Book of Abstracts of the Ninth International Conference on Numerical Methods and Applications (NM&A'18) (pp. 34–35), Borovets, Bulgaria. (reposiTUm)

1124.   Sverdlov, V., Selberherr, S. (2018).
Actual Problems in the Field of Spintronics.
In Proceedings of the Workshop on Applied Mathematics and Simulation for Semiconductors (AMasIS) 2018 (p. 40), Berlin, Germany. (reposiTUm)

1123.   Gnam, L., Manstetten, P., Selberherr, S., Weinbub, J. (2018).
Comparison of High-Performance Graph Coloring Algorithms.
In Proceedings of the Vienna Young Scientists Symposium (pp. 30–31), Wien, Austria. (reposiTUm)

1122.   Sverdlov, V., Selberherr, S. (2018).
Current and Shot Noise at Spin-Dependent Hopping in Magnetic Tunnel Junctions.
In Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) (pp. 107–108), Bologna, Italy. (reposiTUm)

1121.   Sverdlov, V., Selberherr, S. (2018).
Electron Spin for Modern and Future Microelectronics.
In Proceedings of the International Conference Micro- and Nanoelectronics (ICMNE) 2018 (p. 7), Moscow-Zvenigorod. (reposiTUm)

1120.   Lahlalia, A., Neel, O., Shankar, R., Selberherr, S., Filipovic, L. (2018).
Enhanced Sensing Performance of Integrated Gas Sensor Devices.
In EUROSENSORS 2018, Dresden, D. https://doi.org/10.3390/proceedings2131508 (reposiTUm)

1119.   Gnam, L., Selberherr, S., Weinbub, J. (2018).
Evaluation of Serial and Parallel Shared-Memory Distance-1 Graph Coloring Algorithms.
In Book of Abstracts of the Ninth International Conference on Numerical Methods and Applications (NM&A'18) (p. 52), Borovets, Bulgaria. (reposiTUm)

1118.   Sverdlov, V., Makarov, A., Selberherr, S. (2018).
Fast, Reliable, and Field-Free Perpendicular Magnetization Reversal in Advanced Spin-Orbit Torque MRAM by Two-Pulse Switching.
In Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS) (pp. 124–125), Kona. (reposiTUm)

1117.   Makarov, A., Sverdlov, V., Selberherr, S. (2018).
Field-Free Fast Reliable Deterministic Switching in Perpendicular Spin-Orbit Torque MRAM Cells.
In 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, TX, United States. https://doi.org/10.1109/sispad.2018.8551716 (reposiTUm)

1116.   Medina-Bailón, C., Sadi, T., Nedjalkov, M., Lee, J., Berrada, S., Carillo-Nunez, H., Georgiev, V., Selberherr, S., Asenov, A. (2018).
Impact of the Effective Mass on the Mobility in Si Nanowire Transistors.
In 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, TX, United States. https://doi.org/10.1109/sispad.2018.8551630 (reposiTUm)

1115.   Simonka, V., Hössinger, A., Selberherr, S., Weinbub, J. (2018).
Investigation of Post-Implantation Annealing for Phosphorus-Implanted 4h-Silicon Carbide.
In Proceedings of the International Conference on Microelectronic Devices and Technologies (MicDAT) (pp. 42–44), Barcelona, Spain. (reposiTUm)

1114.   Sverdlov, V., Makarov, A., Selberherr, S. (2018).
Magnetic Field-Free Fast Reliable Switching by Spin-Orbit Torque in Advanced MRAM.
In Proceedings of Micromagnetics: Analysis, Numerics, Applications (MANA) 2018 (p. 32), Vienna, Austria. (reposiTUm)

1113.   Lee, J., Carillo-Nunez, H., Nedjalkov, M., Medina-Bailón, C., Sadi, T., Selberherr, S., Berrada, S., Georgiev, V., Asenov, A. (2018).
Nanowire FETs.
In 2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC) (pp. 1–4), Portland, USA. https://doi.org/10.1109/NMDC.2018.8605884 (reposiTUm)

1112.   Sverdlov, V., Makarov, A., Selberherr, S. (2018).
Reliable Sub-Nanosecond Switching of a Perpendicular SOT-MRAM Cell Without External Magnetic Field.
In Proceedings of the 22nd World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI) (pp. 30–32), Orlando, Florida, USA. (reposiTUm)

1111.   Benam, M., Wołoszyn, M., Selberherr, S. (2018).
Self-Consistent Monte Carlo Solution of Wigner and Poisson Equations Using an Efficient Multigrid Approach.
In Abstracts Annual Meeting of the Bulgarian Section of SIAM (BGSIAM) (pp. 20–21), Sofia, Bulgaria. (reposiTUm)

1110.   Sverdlov, V., Selberherr, S. (2018).
Shot Noise Enhancement at Spin-Dependent Hopping.
In Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS) (pp. 6–7), Kona. (reposiTUm)

1109.   Sverdlov, V., Selberherr, S. (2018).
Spin Correlations at Hopping in Magnetic Structures: From Tunneling Magnetoresistance to Single-Spin Transistor.
In Spintronics XI (pp. 1073235-1–1073235-8), San Diego, United States. https://doi.org/10.1117/12.2319271 (reposiTUm)

1108.   Sverdlov, V., Selberherr, S. (2018).
Spin-Dependent Trap-Assisted Tunneling: A Path Towards a Single Spin Switch.
In Abstracts Advanced Research Workshop Future Trends in Microelectronics: Vingt Ans Après (p. 49), Sardinia, Italy. (reposiTUm)

1107.   Toifl, A., Simonka, V., Hössinger, A., Selberherr, S., Weinbub, J. (2018).
Steady-State Empirical Model for Electrical Activation of Silicon-Implanted Gallium Nitride.
In 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, TX, United States. https://doi.org/10.1109/sispad.2018.8551728 (reposiTUm)

1106.   Medina-Bailón, C., Sadi, T., Nedjalkov, M., Lee, J., Berrada, S., Carillo-Nunez, H., Georgiev, V., Selberherr, S., Asenov, A. (2018).
Study of the 1D Scattering Mechanisms' Impact on the Mobility in Si Nanowire Transistors.
In Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) (pp. 15–16), Bologna, Italy. (reposiTUm)

1105.  J. Woerle, V. Simonka, E. Müller, A. Hössinger, H. Sigg, S. Selberherr, J. Weinbub, M. Camarda, U. Grossner:
"Surface Morphology of 4H-SiC After Thermal Oxidation";
Talk: European Conference on Silicon Carbide and Related Materials (ECSCRM), Birmingham, UK; 2018-09-02 - 2018-09-06; in: "Proceedings of the European Conference on Silicon Carbide and Related Materials (ECSCRM)", (2018).

1104.   Sverdlov, V., Makarov, A., Selberherr, S. (2018).
Switching Current Reduction in Advanced Spin-Orbit Torque MRAM.
In Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) (pp. 57–58), Bologna, Italy. (reposiTUm)

1103.   Filipovic, L., Lahlalia, A., Selberherr, S. (2018).
System-On-Chip Sensor Integration in Advanced CMOS Technology.
In Proceedings of the 233rd ECS Meeting (ECS), Seattle, Washington, USA. (reposiTUm)

1102.   Makarov, A., Sverdlov, V., Selberherr, S. (2018).
Two-Pulse Sub-Ns Switching of a Perpendicular Spin-Orbit Torque MRAM Cell Without External Magnetic Field.
In Abstracts Advanced Research Workshop Future Trends in Microelectronics: Vingt Ans Après (p. 51), Sardinia, Italy. (reposiTUm)

1101.   Makarov, A., Sverdlov, V., Selberherr, S. (2018).
Ultra-Fast Switching of a Free Magnetic Layer With Out-Of-Plane Magnetization in Spin-Orbit Torque MRAM Cells.
In Proceedings of the 233rd ECS Meeting (ECS), Seattle, Washington, USA. (reposiTUm)

1100.   Klemenschits, X., Selberherr, S., Filipovic, L. (2018).
Unified Feature Scale Model for Etching in SF6 and Cl Plasma Chemistries.
In Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) (pp. 65–66), Bologna, Italy. (reposiTUm)

1099.   Sverdlov, V., Selberherr, S. (2017).
A Single-Spin Switch.
In Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS) (pp. 93–94), Kona. (reposiTUm)

1098.   Manstetten, P., Hössinger, A., Weinbub, J., Selberherr, S. (2017).
Accelerated Direct Flux Calculations Using an Adaptively Refined Icosahedron.
In 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan. https://doi.org/10.23919/sispad.2017.8085267 (reposiTUm)

1097.   Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S. (2017).
Analysis of a Spin-Transfer Torque Based Copy Operation of a Buffered Magnetic Processing Environment.
In Proceedings of the 21st World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI) (pp. 142–146), Orlando, Florida, USA. (reposiTUm)

1096.   Ballicchia, M., Weinbub, J., Nedjalkov, M., Selberherr, S. (2017).
Classical and Quantum Electron Evolution With a Repulsive Dopant.
In Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS) (pp. 105–106), Kona. (reposiTUm)

1095.   Sverdlov, V., Weinbub, J., Selberherr, S. (2017).
Current in Magnetic Tunnel Junctions at Spin-Dependent Hopping.
In Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS) (pp. 87–88), Kona. (reposiTUm)

1094.   Sverdlov, V., Weinbub, J., Selberherr, S. (2017).
Electron Spin at Work in Modern and Emerging Devices.
In Abstracts of the Energy-Materials-Nanotechnology Meeting on Quantum (EMN) (pp. 31–33), Wien, Austria, Austria. (reposiTUm)

1093.   Sverdlov, V., Weinbub, J., Selberherr, S. (2017).
Enhanced Shot Noise as a Signature of Trap-Assisted Tunneling in Magnetic Tunnel Junctions: A Monte Carlo Approach.
In Proceedings of the 25th International Symposium on Nanostructures: Physics and Technology (pp. 132–133), Sankt Petersburg, Russland. (reposiTUm)

1092.   Diamantopoulos, G., Weinbub, J., Hössinger, A., Selberherr, S. (2017).
Evaluation of the Shared-Memory Parallel Fast Marching Method for Re-Distancing Problems.
In 2017 17th International Conference on Computational Science and Its Applications (ICCSA), Trieste, Italy. https://doi.org/10.1109/iccsa.2017.7999648 (reposiTUm)

1091.   Selberherr, S., Windbacher, T., Makarov, A., Sverdlov, V. (2017).
Exploiting Spin-Transfer Torque for Non-Volatile Computing.
In Book of Abstracts of BIT's 3rd Annual World Congress of Smart Materials-2017 (p. 130), Singapore. (reposiTUm)

1090.   Sverdlov, V., Mahmoudi, H., Windbacher, T., Makarov, A., Weinbub, J., Selberherr, S. (2017).
MTJs - Spin-Based Binary Memristors for Non-Volatile Memory and Logic Applications.
In Abstracts of the Energy-Materials-Nanotechnology Meeting on Memristive Switching, Network (EMN) (pp. 33–34), Milan, Italy. (reposiTUm)

1089.   Sverdlov, V., Weinbub, J., Selberherr, S. (2017).
Modeling Spin-Dependent Phenomena for New Device Applications.
In CSE17 Abstracts (pp. 45–46), Atlanta, GA, USA. (reposiTUm)

1088.  V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr:
"Modeling and Simulation of Electrical Activation of Acceptor-Type Dopants in Silicon Carbide";
Poster: International Conference on Silicon Carbide and Related Materials (ICSCRM), Washington D.C., USA; 2017-09-17 - 2017-09-22; in: "Proceedings of the International Conference on Silicon Carbide and Related Materials (ICSCRM)", (2017).

1087.   Filipovic, L., de Orio, R., Zisser, W., Selberherr, S. (2017).
Modeling Electromigration in Nanoscaled Copper Interconnects.
In 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan. https://doi.org/10.23919/sispad.2017.8085289 (reposiTUm)

1086.   Simonka, V., Hössinger, A., Weinbub, J., Selberherr, S. (2017).
Modeling of Electrical Activation Ratios of Phosphorus and Nitrogen Doped Silicon Carbide.
In 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan. https://doi.org/10.23919/sispad.2017.8085280 (reposiTUm)

1085.   Sadi, T., Towie, E., Nedjalkov, M., Asenov, A., Selberherr, S. (2017).
Monte Carlo Particles in Quantum Wires: Effects of the Confinement.
In Abstracts International Conference on Large-Scale Scientific Computations (LSSC) (pp. 89–90), Sozopol, Bulgaria. (reposiTUm)

1084.   Sverdlov, V., Makarov, A., Weinbub, J., Selberherr, S. (2017).
Non-Volatility by Spin in Modern Nanoelectronics.
In 2017 IEEE 30th International Conference on Microelectronics (MIEL), Beograd. https://doi.org/10.1109/miel.2017.8190061 (reposiTUm)

1083.   Sverdlov, V., Selberherr, S. (2017).
Shot Noise at Spin-Dependent Hopping in Tunnel Junctions With Ferromagnetic Electrodes.
In Bulletin of the APS April Meeting 2017, Los Angeles/USA, Austria. (reposiTUm)

1082.   Meller, G., Selberherr, S. (2017).
Simulation of Injection Currents Into Disordered Molecular Conductors.
In Proceedings of the 9thInternational Conference on Advanced Nano Materials (ANM), Aveiro, Portugal. (reposiTUm)

1081.   Sverdlov, V., Weinbub, J., Selberherr, S. (2017).
Spin-Based Non-Volatile Memory and Logic in Modern Nanoelectronics.
In Abstracts of the BIT's 7th Annual World Congress of Nano Science, Technology-2017 (p. 343), Xi'an, China. (reposiTUm)

1080.   Sverdlov, V., Weinbub, J., Selberherr, S. (2017).
Spin-Dependent Trap-Assisted Tunneling in Magnetic Tunnel Junctions: A Monte Carlo Study.
In Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN 2017) (pp. 88–90), Windermere, United Kingdom. (reposiTUm)

1079.   Sverdlov, V., Weinbub, J., Selberherr, S. (2017).
Spintronics as a Non-Volatile Complement to Nanoelectronics.
In Proceedings of the 53rd International Conference on Microelectronics, Devices and Materials (MIDEM 2017) (p. 10), Ljubljana, Slovenia. (reposiTUm)

1078.   Gnam, L., Weinbub, J., Hössinger, A., Selberherr, S. (2017).
Towards a Metric for an Automatic Hull Mesh Coarsening Strategy.
In Proceedings of the Vienna Young Scientists Symposium (pp. 118–119), Wien, Austria. (reposiTUm)

1077.   Gnam, L., Weinbub, J., Rupp, K., Rudolf, F., Selberherr, S. (2017).
Using Graph Partitioning and Coloring for Flexible Coarse-Grained Shared-Memory Parallel Mesh Adaptation.
In Proceedings of the 26th International Meshing Roundtable (IMR26) (p. 5), Austin, Texas, USA. (reposiTUm)

1076.   Ellinghaus, P., Nedjalkov, M., Weinbub, J., Selberherr, S. (2017).
Wigner Analysis of Surface Roughness in Quantum Wires.
In Book of Abstracts of the International Wigner Workshop (IW2) (pp. 40–41), Waikoloa, Hawaii, USA. (reposiTUm)

1075.   Ellinghaus, P., Weinbub, J., Nedjalkov, M., Selberherr, S. (2017).
Wigner Modelling of Surface Roughness in Quantum Wires.
In Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN 2017) (pp. 171–172), Windermere, United Kingdom. (reposiTUm)

1074.   Weinbub, J., Nedjalkov, M., Dimov, I., Selberherr, S. (2017).
Wigner-Signed Particles Study of Double Dopant Quantum Effects.
In Book of Abstracts of the International Wigner Workshop (IW2) (pp. 50–51), Waikoloa, Hawaii, USA. (reposiTUm)

1073.   Simonka, V., Nawratil, G., Hössinger, A., Weinbub, J., Selberherr, S. (2016).
Direction Dependent Three-Dimensional Silicon Carbide Oxidation Growth Rate Calculations.
In 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS). https://doi.org/10.1109/ulis.2016.7440094 (reposiTUm)

1072.   Sverdlov, V., Selberherr, S. (2016).
Effects of Spin Relaxation on Trap-Assisted Tunneling Through Ferromagnetic Metal-Oxide-Semiconductor Structures.
In Bulletin of the American Physical Society (APS March Meeting) (p. 1), Los Angeles/USA, Austria. (reposiTUm)

1071.   Filipovic, L., Selberherr, S. (2016).
Effects of the Deposition Process Variation on the Performance of Open TSVs.
In 2016 IEEE 66th Electronic Components and Technology Conference (ECTC), Las Vegas, NV, USA. https://doi.org/10.1109/ectc.2016.177 (reposiTUm)

1070.   Selinger, A., Rupp, K., Selberherr, S. (2016).
Evaluation of Mobile ARM-Based SoCs for High Performance Computing.
In 24th High Performance Computing Symposium, Orlando, FL, USA. https://doi.org/10.22360/springsim.2016.hpc.022 (reposiTUm)

1069.   Simonka, V., Nawratil, G., Hössinger, A., Weinbub, J., Selberherr, S. (2016).
Geometrical Aspects of Three-Dimensional Silicon Carbide Oxidation Growth Rate Modeling.
In Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) (pp. 128–129), Bologna, Italy. (reposiTUm)

1068.   Filipovic, L., Singulani, A., Roger, F., Carniello, S., Selberherr, S. (2016).
Impact of Across-Wafer Variation on the Electrical Performance of TSVs.
In 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC), San Jose, USA. https://doi.org/10.1109/iitc-amc.2016.7507707 (reposiTUm)

1067.   Sverdlov, V., Selberherr, S. (2016).
Influence of Spin Relaxation on Trap-Assisted Resonant Tunneling in Ferromagnet-Oxide-Semiconductor Structures.
In 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS). https://doi.org/10.1109/ulis.2016.7440088 (reposiTUm)

1066.   Windbacher, T., Malm, B., Sverdlov, V., Östling, M., Selberherr, S. (2016).
Influence of the Free Layer Alignment on the Reliability of a Non-Volatile Magnetic Shift Register.
In Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS) (p. 43), Kona. (reposiTUm)

1065.   Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S. (2016).
Layer Coupling and Read Disturbances in a Buffered Magnetic Logic Environment.
In Spintronics IX (pp. 99312M-1–99312M-12), San Diego, United States. https://doi.org/10.1117/12.2236151 (reposiTUm)

1064.   Windbacher, T., Mahmoudi, H., Makarov, A., Sverdlov, V., Selberherr, S. (2016).
Logic-In-Memory: A Non-Volatile Processing Environment for the Post CMOS Age.
In Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nürnberg, Germany. (reposiTUm)

1063.   Windbacher, T., Sverdlov, V., Selberherr, S. (2016).
Magnetic Nonvolatile Processing Environment.
In Program and Abstracts of the I International Scientific and Practical Conference Innovation in the Software Systems of Trains (pp. 42–43), Samara, Russia. (reposiTUm)

1062.   Sverdlov, V., Makarov, A., Windbacher, T., Selberherr, S. (2016).
Magnetic Field Dependent Tunneling Magnetoresistance Through a Quantum Well Between Ferromagnetic Contacts.
In 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nuremberg, Germany. https://doi.org/10.1109/sispad.2016.7605210 (reposiTUm)

1061.   Nedjalkov, M., Weinbub, J., Selberherr, S. (2016).
Modeling Carrier Transport in Nanoscale Semiconductor Devices.
In Abstracts of the BIT's 6th Annual World Congress of Nano Science, Technology-2016 (p. 377), Xi'an, China. (reposiTUm)

1060.   Manstetten, P., Filipovic, L., Hössinger, A., Weinbub, J., Selberherr, S. (2016).
Modeling Neutral Particle Flux in High Aspect Ratio Holes Using a One-Dimensional Radiosity Approach.
In Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) (pp. 68–69), Bologna, Italy. (reposiTUm)

1059.   Filipovic, L., Selberherr, S. (2016).
Modeling the Deposition and Stress Generation in Thin Films for CMOS-Integrated Gas Sensors.
In Proceedings of the BIT's 2nd Annual World Congress of Smart Materials 2016 (p. 517), Singapore. (reposiTUm)

1058.   Sverdlov, V., Ghosh, J., Makarov, A., Windbacher, T., Selberherr, S. (2016).
Nanoelectronics With Spin.
In Book of Abstracts of the World Congress and Expo on Nanotechnology and Materials Science (pp. 19–20), Dubai, United Arab Emirates. (reposiTUm)

1057.   Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S. (2016).
Novel Magnetic Devices for Memory and Non-Volatile Computing Applications.
In 2016 Conference Program of the Emerging Technologies Communication Microsystems Optoelectronics Sensing (ETCMOS) (p. 14), Montreal, QC, Canada. (reposiTUm)

1056.   Nedjalkov, M., Weinbub, J., Dimov, I., Selberherr, S. (2016).
Signed Particle Interpretation for Wigner-Quantum Electron Evolution.
In Abstracts Third National Congress of Physical Sciences (p. 1), Sofia, Bulgaria. (reposiTUm)

1055.   Makarov, A., Sverdlov, V., Windbacher, T., Selberherr, S. (2016).
Silicon Spintronics.
In Proceedings of the ICEM 2016 (p. 1), Singapur. (reposiTUm)

1054.   Sverdlov, V., Selberherr, S. (2016).
Spin-Dependent Resonant Tunneling in Ferromagnet-Oxide-Silicon Structures.
In Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) (pp. 116–117), Bologna, Italy. (reposiTUm)

1053.   Nedjalkov, M., Weinbub, J., Selberherr, S. (2016).
The Description of Carrier Transport for Quantum Systems.
In Book of Abstracts of the Energy Materials Nanotechnology Meeting on Quantum (pp. 41–42), Phuket, Thailand. (reposiTUm)

1052.   Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S. (2016).
The Exploitation of Magnetization Orientation Encoded Spin-Transfer Torque for an Ultra Dense Non-Volatile Magnetic Shift Register.
In 2016 46th European Solid-State Device Research Conference (ESSDERC), Montreux, Austria. https://doi.org/10.1109/essderc.2016.7599648 (reposiTUm)

1051.   Simonka, V., Hössinger, A., Weinbub, J., Selberherr, S. (2016).
Three-Dimensional Growth Rate Modeling and Simulation of Silicon Carbide Thermal Oxidation.
In 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nuremberg, Germany. https://doi.org/10.1109/sispad.2016.7605190 (reposiTUm)

1050.   Sverdlov, V., Ghosh, J., Selberherr, S. (2016).
Universal Dependence of the Spin Lifetime in Silicon Films on the Spin Injection Direction.
In Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS) (p. 7), Kona. (reposiTUm)

1049.   Manstetten, P., Filipovic, L., Hössinger, A., Weinbub, J., Selberherr, S. (2016).
Using One-Dimensional Radiosity to Model Neutral Particle Flux in High Aspect Ratio Holes.
In 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS). https://doi.org/10.1109/ulis.2016.7440067 (reposiTUm)

1048.   Manstetten, P., Filipovic, L., Hössinger, A., Weinbub, J., Selberherr, S. (2016).
Using One-Dimensional Radiosity to Model Neutral Flux in Convex High Aspect Ratio Structures.
In 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nuremberg, Germany. https://doi.org/10.1109/sispad.2016.7605198 (reposiTUm)

1047.   Ellinghaus, P., Nedjalkov, M., Weinbub, J., Selberherr, S. (2016).
Wigner Modelling of Quantum Wires.
In Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS) (p. 2), Kona. (reposiTUm)

1046.   Makarov, A., Windbacher, T., Sverdlov, V., Selberherr, S. (2015).
A Novel Method of SOT-MRAM Switching.
In Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN), Kaanapali. (reposiTUm)

1045.   Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S. (2015).
A Universal Nonvolatile Processing Environment.
In Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Journey into the Unknown (p. 62), Mallorca, Spain. (reposiTUm)

1044.   Sverdlov, V., Ghosh, J., Makarov, A., Windbacher, T., Selberherr, S. (2015).
CMOS-compatible Spintronic Devices.
In 2015 30th Symposium on Microelectronics Technology and Devices (SBMicro), Brasilia, Brazil. https://doi.org/10.1109/sbmicro.2015.7298103 (reposiTUm)

1043.   Ceric, H., Selberherr, S. (2015).
Compact Model for Solder Bump Electromigration Failure.
In 2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM), Grenoble, France. https://doi.org/10.1109/iitc-mam.2015.7325651 (reposiTUm)

1042.   Weinbub, J., Ellinghaus, P., Nedjalkov, M., Selberherr, S. (2015).
Comparison of Slab and Block Decomposition Strategies for the Two-Dimensional Wigner Monte Carlo Method.
In Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN), Kaanapali. (reposiTUm)

1041.   Makarov, A., Windbacher, T., Sverdlov, V., Selberherr, S. (2015).
Concept of a SOT-MRAM Based on 1Transistor-1mtj-Cell Structure.
In Extended Abstracts of the International Conference on Solid State Devices and Materials (SSDM) (pp. 140–141), Fukuoka, Japan. (reposiTUm)

1040.   Ghosh, J., Osintsev, D., Sverdlov, V., Selberherr, S. (2015).
Dependence of Spin Lifetime on Spin Injection Orientation in Strained Silicon Films.
In EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Bologna, Italy. https://doi.org/10.1109/ulis.2015.7063829 (reposiTUm)

1039.   Makarov, A., Windbacher, T., Sverdlov, V., Selberherr, S. (2015).
Efficient High-Frequency Spin-Torque Oscillators Composed of Two Three-Layer MgO-MTJs With a Common Free Layer.
In Proceedings of 21st Iberchip Worshop, Montevideo, Uruguay. (reposiTUm)

1038.   Sverdlov, V., Ghosh, J., Osintsev, D., Selberherr, S. (2015).
Electron Spin Lifetime Enhancement by Shear Strain in Thin Silicon Films.
In Book of Abstracts of the 2015 CMOS Emerging Technologies Research Symposium (CMOSETR) (p. 58), Vancouver, BC, Canada. (reposiTUm)

1037.   Ghosh, J., Osintsev, D., Sverdlov, V., Selberherr, S. (2015).
Evaluation of Spin Lifetime in Thin Silicon Films by Multilevel Parallelization.
In Proceedings of the nanoHUB User Conference (p. 1), West Lafayette, Indiana, USA. (reposiTUm)

1036.   Ghosh, J., Osintsev, D., Sverdlov, V., Weinbub, J., Selberherr, S. (2015).
Evaluation of Spin Lifetime in Thin-Body FETs: A High Performance Computing Approach.
In Large-Scale Scientific Computing 10th International Conference, LSSC 2015 (pp. 285–292), Sozopol, Bulgaria. https://doi.org/10.1007/978-3-319-26520-9_31 (reposiTUm)

1035.   Rudolf, F., Weinbub, J., Rupp, K., Resutik, P., Morhammer, A., Selberherr, S. (2015).
Free Open Source Mesh Healing for TCAD Device Simulations.
In Large-Scale Scientific Computing 10th International Conference, LSSC 2015 (pp. 293–300), Sozopol, Bulgaria. https://doi.org/10.1007/978-3-319-26520-9_32 (reposiTUm)

1034.   Roger, F., Singulani, A., Carniello, S., Filipovic, L., Selberherr, S. (2015).
Global Statistical Methodology for the Analysis of Equipment Parameter Effects on TSV Formation.
In 2015 International Workshop on CMOS Variability (VARI), Salvador, Brazil. https://doi.org/10.1109/vari.2015.7456561 (reposiTUm)

1033.   Ellinghaus, P., Nedjalkov, M., Selberherr, S. (2015).
Improved Particle Annihilation for Wigner Monte Carlo Simulations on a High-Resolution Mesh.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 93–94), Urbana-Champaign, IL, USA. (reposiTUm)

1032.   Ellinghaus, P., Nedjalkov, M., Selberherr, S. (2015).
Improved Drive-Current Into Nanoscaled Channels Using Electrostatic Lenses.
In 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington, DC, United States. https://doi.org/10.1109/sispad.2015.7292249 (reposiTUm)

1031.   Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S. (2015).
Improving the Performance of a Non-Volatile Magnetic Flip Flop by Exploiting the Spin Hall Effect.
In 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington, DC, United States. https://doi.org/10.1109/sispad.2015.7292357 (reposiTUm)

1030.   Ghosh, J., Osintsev, D., Sverdlov, V., Selberherr, S. (2015).
Increase of Surface Roughness and Phonon Scattering Mediated Spin Lifetime in Thin Strained SOI Film.
In Book of Abstracts of the 2015 E-MRS Fall Meeting (p. 1), Strasbourg, France. (reposiTUm)

1029.   Ghosh, J., Sverdlov, V., Selberherr, S. (2015).
Increment of Spin Lifetime by Spin Injection Orientation in Stressed Thin SOI Films.
In Program and Abstract Book of the 8th International School, Conference on Spintronics and Quantum Information Technology (p. 130), Cracow. (reposiTUm)

1028.   Ghosh, J., Sverdlov, V., Selberherr, S. (2015).
Influence of Valley Splitting on Spin Relaxation Time in a Strained Thin Silicon Film.
In 2015 International Workshop on Computational Electronics (IWCE), Urbana-Champaign, IL, USA. https://doi.org/10.1109/iwce.2015.7301961 (reposiTUm)

1027.   Ghosh, J., Osintsev, D., Sverdlov, V., Selberherr, S. (2015).
Injection Direction Sensitive Spin Lifetime Model in a Strained Thin Silicon Film.
In 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington, DC, United States. https://doi.org/10.1109/sispad.2015.7292313 (reposiTUm)

1026.   Ghosh, J., Osintsev, D., Sverdlov, V., Selberherr, S. (2015).
Intersubband Spin Relaxation Reduction and Spin Lifetime Enhancement by Strain in SOI Structures.
In Book of Abstracts 19th Conference on Insulating Films on Semiconductors (pp. 235–236), Cracow, Poland. (reposiTUm)

1025.   Filipovic, L., Singulani, A., Roger, F., Carniello, S., Selberherr, S. (2015).
Intrinsic Stress Analysis of Tungsten-Lined Open TSVs.
In Abstracts of the 26th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (p. 71), Maastricht. (reposiTUm)

1024.   Filipovic, L., Selberherr, S. (2015).
Kinetics of Droplet Motion During Spray Pyrolysis.
In Abstracts of the Energy-Materials-Nanotechnology Meeting on Droplets (EMN) (pp. 127–128), Phuket, Thailand. (reposiTUm)

1023.   Ellinghaus, P., Nedjalkov, M., Selberherr, S. (2015).
Memory-Efficient Particle Annihilation Algorithm for Wigner Monte Carlo Simulations.
In 2015 International Workshop on Computational Electronics (IWCE), Urbana-Champaign, IL, USA. https://doi.org/10.1109/iwce.2015.7301955 (reposiTUm)

1022.   Rudolf, F., Weinbub, J., Rupp, K., Resutik, P., Selberherr, S. (2015).
Mesh Healing for TCAD Simulations.
In Abstracts International Conference on Large-Scale Scientific Computations (LSSC) (p. 66), Sozopol, Bulgaria. (reposiTUm)

1021.   Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S. (2015).
Novel Buffered Magnetic Logic Gate Grid.
In Proceedings of the 227th ECS Meeting (ECS) (p. 2), Honolulu, Austria. (reposiTUm)

1020.   Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S. (2015).
Novel Spintronic Devices for Embedded Spin-Based Memories and Non-Volatile Computing.
In Abstracts of the Energy-Materials-Nanotechnology Fall Meeting (EMN) (pp. 15–16), Orlando, USA. (reposiTUm)

1019.   Weinbub, J., Ellinghaus, P., Selberherr, S. (2015).
Parallelization of the Two-Dimensional Wigner Monte Carlo Method.
In Abstracts International Conference on Large-Scale Scientific Computations (LSSC) (p. 73), Sozopol, Bulgaria. (reposiTUm)

1018.   Filipovic, L., Selberherr, S. (2015).
Processing of Integrated Gas Sensor Devices.
In TENCON 2015 - 2015 IEEE Region 10 Conference, Macau, China. https://doi.org/10.1109/tencon.2015.7372781 (reposiTUm)

1017.   Makarov, A., Windbacher, T., Sverdlov, V., Selberherr, S. (2015).
SOT-MRAM Based on 1Transistor-1mtj-Cell Structure.
In Technical Digest of the Non-Volatile Memory Technology Symposium (NVMTS) (pp. 105–106), Beijing, China. (reposiTUm)

1016.   Makarov, A., Windbacher, T., Sverdlov, V., Selberherr, S. (2015).
SOT-MRAM Based on 1Transistor-1mtj-Cell Structure.
In 2015 15th Non-Volatile Memory Technology Symposium (NVMTS). https://doi.org/10.1109/nvmts.2015.7457479 (reposiTUm)

1015.   Weinbub, J., Dang, F., Gillberg, T., Selberherr, S. (2015).
Shared-Memory Parallelization of the Semi-Ordered Fast Iterative Method.
In Proceedings of the High Performance Computing Symposium (HPC) (pp. 217–224). (reposiTUm)

1014.   Sverdlov, V., Ghosh, J., Makarov, A., Windbacher, T., Selberherr, S. (2015).
Silicon Spintronics.
In Conference Abstracts, NATO Advanced Research Workshop "Functional Nanomaterials and Devices for Electronics, Sensors, Energy Harvesting" (pp. 44–45), Lviv, Ukrain. (reposiTUm)

1013.   Sverdlov, V., Ghosh, J., Makarov, A., Windbacher, T., Selberherr, S. (2015).
Silicon Spintronics: Recent Advances and Challenges.
In Proceedings of the 2015 International Conference and School for Young Scientists Information Technology and Nanotechnology (ITNT) (pp. 6–7), Samara, Russia. (reposiTUm)

1012.   Sverdlov, V., Ghosh, J., Makarov, A., Windbacher, T., Selberherr, S. (2015).
Silicon and CMOS-Compatible Spintronics.
In Proceedings of the International Conference on Applied Physics, Simulation and Computers (APSAC 2015) (pp. 17–20), Vienna, Austria, Austria. (reposiTUm)

1011.   Ghosh, J., Osintsev, D., Sverdlov, V., Selberherr, S. (2015).
Spin Lifetime Dependence on Spin Injection Orientation in Strained Silicon Films.
In Bulletin of the American Physical Society (APS March Meeting), Los Angeles/USA, Austria. (reposiTUm)

1010.   Ghosh, J., Osintsev, D., Sverdlov, V., Selberherr, S. (2015).
Spin Lifetime Dependence on Valley Splitting in Thin Silicon Films.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 35–36), Urbana-Champaign, IL, USA. (reposiTUm)

1009.   Osintsev, D., Ghosh, J., Sverdlov, V., Weinbub, J., Selberherr, S. (2015).
Spin Lifetime in MOSFETs: A High Performance Computing Approach.
In Abstracts International Conference on Large-Scale Scientific Computations (LSSC) (pp. 60–61), Sozopol, Bulgaria. (reposiTUm)

1008.   Sverdlov, V., Selberherr, S. (2015).
Spin-Based CMOS-Compatible Devices.
In Abstracts International Conference on Large-Scale Scientific Computations (LSSC) (p. 69), Sozopol, Bulgaria. (reposiTUm)

1007.   Sverdlov, V., Selberherr, S. (2015).
Spin-Based Silicon and CMOS-Compatible Devices.
In Proceedings of the 227th ECS Meeting (ECS) (p. 2), Honolulu, Austria. (reposiTUm)

1006.   Sverdlov, V., Ghosh, J., Makarov, A., Windbacher, T., Selberherr, S. (2015).
Spin-Driven Applications of Silicon and CMOS-Compatible Devices.
In Abstracts of the BIT's 5th Annual Congress of Nano Science, Technology-2015 (p. 175), Xi'an, China. (reposiTUm)

1005.   Sverdlov, V., Selberherr, S. (2015).
Spin-Based Devices for Future Microelectronics.
In 2015 International Symposium on Next-Generation Electronics (ISNE), Taipei, Taiwan. https://doi.org/10.1109/isne.2015.7132030 (reposiTUm)

1004.   Sverdlov, V., Selberherr, S. (2015).
Spin-Dependent Trap-Assisted Tunneling Including Spin Relaxation at Room Temperature.
In Program and Abstract Book of the 8th International School, Conference on Spintronics and Quantum Information Technology (p. 114), Cracow. (reposiTUm)

1003.   Sverdlov, V., Selberherr, S. (2015).
Spin-Dependent Trap-Assisted Tunneling in Ferromagnet-Oxide-Semiconductor Structures.
In Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN), Kaanapali. (reposiTUm)

1002.   Sverdlov, V., Osintsev, D., Ghosh, J., Selberherr, S. (2015).
Strained Silicon-On-Insulator for Spintronic Applications: Giant Spin Lifetime Enhancement.
In Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Journey into the Unknown (p. 63), Mallorca, Spain. (reposiTUm)

1001.   Filipovic, L., Selberherr, S. (2015).
Stress Considerations in Thin Films for CMOS-Integrated Gas Sensors.
In Proceedings of the 227th ECS Meeting (ECS) (p. 2), Honolulu, Austria. (reposiTUm)

1000.   Filipovic, L., Selberherr, S. (2015).
Stress in Three-Dimensionally Integrated Sensor Systems.
In Abstracts of the 2015 International Conference on Materials for Advanced Technologies (ICMAT) (p. 342), Singapore. (reposiTUm)

999.   Rudolf, F., Weinbub, J., Rupp, K., Morhammer, A., Selberherr, S. (2015).
Symmetry-Aware 3D Volumetric Mesh Generation - An Analysis of Performance and Element Quality.
In Proceedings of the 24th International Meshing Roundtable (IMR24) (p. 5), Austin, Texas, USA. (reposiTUm)

998.   Nedjalkov, M., Ellinghaus, P., Selberherr, S. (2015).
The Aharanov-Bohm Effect From a Phase Space Perspective.
In Abstracts International Conference on Large-Scale Scientific Computations (LSSC) (pp. 59–60), Sozopol, Bulgaria. (reposiTUm)

997.   Ellinghaus, P., Nedjalkov, M., Selberherr, S. (2015).
The Influence of Electrostatic Lenses on Wave Packet Dynamics.
In Abstracts International Conference on Large-Scale Scientific Computations (LSSC) (pp. 39–40), Sozopol, Bulgaria. (reposiTUm)

996.   Ghosh, J., Osintsev, D., Sverdlov, V., Selberherr, S. (2015).
Variation of Spin Lifetime With Spin Injection Orientation in Strained Thin Silicon Films.
In Proceedings of the 227th ECS Meeting (ECS) (p. 2), Honolulu, Austria. (reposiTUm)

995.   Ellinghaus, P., Weinbub, J., Nedjalkov, M., Selberherr, S. (2015).
ViennaWD - Applications.
In Booklet of the International Wigner Workshop (IW2) (p. 9), Waikoloa, Hawaii, USA. (reposiTUm)

994.   Weinbub, J., Ellinghaus, P., Nedjalkov, M., Selberherr, S. (2015).
ViennaWD - Status and Outlook.
In Booklet of the International Wigner Workshop (IW2) (p. 8), Waikoloa, Hawaii, USA. (reposiTUm)

993.   Ceric, H., Orio, R., Singulani, A., Selberherr, S. (2014).
3D Technology Interconnect Reliability TCAD.
In Proceedings of the 2014 Pan Pacific Microelectronics Symposium (pp. 1–8), Big Island of Hawaii, USA. (reposiTUm)

992.   Filipovic, L., Selberherr, S. (2014).
About Processes and Performance of Integrated Gas Sensor Components.
In Abstracts of the Energy-Materials-Nanotechnology Fall Meeting (EMN) (pp. 96–97), Orlando, USA. (reposiTUm)

991.   Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S. (2014).
Compact Modeling of Memristive IMP Gates for Reliable Stateful Logic Design.
In Proceedings of the 21st International Conference on Mixed Design of Integrated Circuits and Systems (p. 26), Gdynia, Poland. (reposiTUm)

990.   Makarov, A., Sverdlov, V., Selberherr, S. (2014).
Composite Magnetic Tunnel Junctions for Fast Memory Devices and Efficient Spin-Torque Nano-Oscillators.
In Future Information Engineering. https://doi.org/10.2495/icie130451 (reposiTUm)

989.   Baer, E., Evanschitzky, P., Lorenz, J., Roger, F., Minixhofer, R., Filipovic, L., Orio, R., Selberherr, S. (2014).
Coupled Simulation to Determine Across Wafer Variations for Electrical and Reliability Parameters of Through-Silicon VIAs.
In Book of Abstracts (p. 2), Chemnitz, Germany. (reposiTUm)

988.   Filipovic, L., de Orio, R., Selberherr, S., Singulani, A., Roger, F., Minixhofer, R. (2014).
Effects of Sidewall Scallops on Open Tungsten TSVs.
In 2014 IEEE International Reliability Physics Symposium, Phoenix. https://doi.org/10.1109/irps.2014.6860633 (reposiTUm)

987.   Filipovic, L., de Orio, R., Selberherr, S. (2014).
Effects of Sidewall Scallops on the Performance and Reliability of Filled Copper and Open Tungsten TSVs.
In Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore. https://doi.org/10.1109/ipfa.2014.6898137 (reposiTUm)

986.   Ellinghaus, P., Nedjalkov, M., Selberherr, S. (2014).
Efficient Calculation of the Two-Dimensional Wigner Potential.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 19–20), Urbana-Champaign, IL, USA. (reposiTUm)

985.   Zisser, W., Ceric, H., Weinbub, J., Selberherr, S. (2014).
Electromigration Reliability of Open TSV Structures.
In Abstracts 25th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF) (p. 48), Maastricht. (reposiTUm)

984.   Ceric, H., Zisser, W., Rovitto, M., Selberherr, S. (2014).
Electromigration in Solder Bumps: A Mean-Time-To-Failure TCAD Study.
In 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan. https://doi.org/10.1109/sispad.2014.6931603 (reposiTUm)

983.   Ceric, H., Selberherr, S. (2014).
Electromigration Induced Failure of Solder Bumps and the Role of IMC.
In IEEE International Interconnect Technology Conference, San Jose, USA. https://doi.org/10.1109/iitc.2014.6831891 (reposiTUm)

982.   Zisser, W., Ceric, H., Weinbub, J., Selberherr, S. (2014).
Electromigration Induced Resistance Increase in Open TSVs.
In 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan. https://doi.org/10.1109/sispad.2014.6931610 (reposiTUm)

981.   Zisser, W., Ceric, H., Weinbub, J., Selberherr, S. (2014).
Electromigration Reliability of Open TSV Structures.
In Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore. https://doi.org/10.1109/ipfa.2014.6898179 (reposiTUm)

980.   Ceric, H., Selberherr, S. (2014).
Electromigration Reliability of Solder Bumps.
In Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore. https://doi.org/10.1109/ipfa.2014.6898145 (reposiTUm)

979.   Sverdlov, V., Osintsev, D., Selberherr, S. (2014).
Electron Momentum and Spin Relaxation in Silicon Films: A Rigorous K P-Based Approach.
In Abstracts of The 18th European Conference on Mathematics for Industry (pp. 454–456), Taormina, Italy. (reposiTUm)

978.   Windbacher, T., Makarov, A., Mahmoudi, H., Sverdlov, V., Selberherr, S. (2014).
Frequency Dependence Study of a Bias Field-Free Nano-Scale Oscillator.
In 2014 International Workshop on Computational Electronics (IWCE). https://doi.org/10.1109/iwce.2014.6865862 (reposiTUm)

977.   Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S. (2014).
High Performance MRAM-based Stateful Logic.
In 2014 15th International Conference on Ultimate Integration on Silicon (ULIS), Bologna, Austria. https://doi.org/10.1109/ulis.2014.6813912 (reposiTUm)

976.   Ellinghaus, P., Nedjalkov, M., Selberherr, S. (2014).
Implications of the Coherence Length on the Discrete Wigner Potential.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 155–156), Urbana-Champaign, IL, USA. (reposiTUm)

975.   Osintsev, D., Sverdlov, V., Selberherr, S. (2014).
Increasing Mobility and Spin Lifetime With Shear Strain in Thin Silicon Films.
In Conference Proceedings of the Tenth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits (pp. 1–2), Granada, Austria. (reposiTUm)

974.   Osintsev, D., Sverdlov, V., Windbacher, T., Selberherr, S. (2014).
Increasing Mobility and Spin Lifetime With Shear Strain in Thin Silicon Films.
In 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan. https://doi.org/10.1109/sispad.2014.6931596 (reposiTUm)

973.   Windbacher, T., Mahmoudi, H., Sverdlov, V., Selberherr, S. (2014).
Influence of Device Geometry on the Non-Volatile Magnetic Flip Flop Characteristics.
In 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan. https://doi.org/10.1109/sispad.2014.6931622 (reposiTUm)

972.   Windbacher, T., Mahmoudi, H., Sverdlov, V., Selberherr, S. (2014).
Influence of Magnetization Variations in the Free Layer on a Non-Volatile Magnetic Flip Flop.
In 2014 15th International Conference on Ultimate Integration on Silicon (ULIS), Bologna, Austria. https://doi.org/10.1109/ulis.2014.6813893 (reposiTUm)

971.   Sverdlov, V., Mahmoudi, H., Makarov, A., Windbacher, T., Selberherr, S. (2014).
Magnetic Tunnel Junctions for Future Memory and Logic-In-Memory Applications.
In Proceedings of the 21st International Conference on Mixed Design of Integrated Circuits and Systems (p. 17), Gdynia, Poland. (reposiTUm)

970.   Schrems, M., Siegert, J., Dorfi, P., Kraft, J., Stueckler, E., Schrank, F., Selberherr, S. (2014).
Manufacturing of 3D Integrated Sensors and Circuits.
In 2014 44th European Solid State Device Research Conference (ESSDERC), Montreux, Austria. https://doi.org/10.1109/essderc.2014.6948785 (reposiTUm)

969.   Rudolf, F., Wimmer, Y., Weinbub, J., Rupp, K., Selberherr, S. (2014).
Mesh Generation Using Dynamic Sizing Functions.
In Proc. 4th European Seminar on Computing (p. 191), Pilsen, Czech Republic. (reposiTUm)

968.   Makarov, A., Windbacher, T., Sverdlov, V., Selberherr, S. (2014).
Micromagnetic Modeling of a Bias-Field-Free Spin-Torque Oscillator Based on Two MgO-MTJs With a Shared Free Layer.
In Book of Abstracts (p. 166), Vienna, Austria. (reposiTUm)

967.   Osintsev, D., Sverdlov, V., Selberherr, S. (2014).
Mobility and Spin Lifetime Enhancement in Thin Silicon Films by Shear Strain.
In Bulletin of the American Physical Society (APS March Meeting) (p. 1), Los Angeles/USA, Austria. (reposiTUm)

966.   Sverdlov, V., Ghosh, J., Osintsev, D., Selberherr, S. (2014).
Modeling Silicon Spintronics.
In Abstracts 2014 (p. 78), Saint-Petersburg, Russia. (reposiTUm)

965.   Makarov, A., Osintsev, D., Sverdlov, V., Selberherr, S. (2014).
Modeling Spin-Based Electronic Devices.
In Book of Abstracts (p. 1), Phoenix, USA. (reposiTUm)

964.   Sverdlov, V., Ghosh, J., Mahmoudi, H., Makarov, A., Osintsev, D., Windbacher, T., Selberherr, S. (2014).
Modeling of Spin-Based Silicon Technology.
In 2014 15th International Conference on Ultimate Integration on Silicon (ULIS), Bologna, Austria. https://doi.org/10.1109/ulis.2014.6813891 (reposiTUm)

963.   Sverdlov, V., Ghosh, J., Mahmoudi, H., Makarov, A., Osintsev, D., Windbacher, T., Selberherr, S. (2014).
Modeling Spin-Based Electronic Devices.
In 2014 29th International Conference on Microelectronics Proceedings - MIEL 2014, Beograd. https://doi.org/10.1109/miel.2014.6842081 (reposiTUm)

962.   Dimov, I., Nedjalkov, M., Sellier, J., Selberherr, S. (2014).
Neumann Series Analysis of the Wigner Equation Solution.
In Abstracts of The 18th European Conference on Mathematics for Industry (p. 459), Taormina, Italy. (reposiTUm)

961.   Makarov, A., Windbacher, T., Sverdlov, V., Selberherr, S. (2014).
New Design of Spin-Torque Nano-Oscillators.
In Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS) (p. 63), Kona. (reposiTUm)

960.   de Orio, R., Gousseau, S., Moreau, S., Cerice, H., Selberherr, S., Farcy, A., Bay, F., Inal, K., Montmitonnet, P. (2014).
On the Material Depletion Rate Due to Electromigration in a Copper TSV Structure.
In 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW), S. Lake Tahoe. https://doi.org/10.1109/iirw.2014.7049523 (reposiTUm)

959.   Ellinghaus, P., Nedjalkov, M., Selberherr, S. (2014).
Optimized Particle Regeneration Scheme for the Wigner Monte Carlo Method.
In Eighth International Conference on Numerical Methods and Applications (p. 19), Borovets, Bulgaria. (reposiTUm)

958.   Filipovic, L., Orio, R., Selberherr, S. (2014).
Process and Performance of Copper TSVs.
In Conference Proceedings of the Tenth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits (pp. 1–2), Granada, Austria. (reposiTUm)

957.   Filipovic, L., de Orio, R., Selberherr, S. (2014).
Process and Reliability of SF<inf>6</inf>/O<inf>2</inf> Plasma Etched Copper TSVs.
In 2014 15th International Conference on Thermal, Mechanical and Mulit-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), Ghent, Belgium. https://doi.org/10.1109/eurosime.2014.6813768 (reposiTUm)

956.   Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S. (2014).
Pushing a Non-Volatile Magnetic Device Structure Towards a Universal CMOS Logic Replacement.
In Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS) (p. 62), Kona. (reposiTUm)

955.   Ceric, H., Zisser, W., Selberherr, S. (2014).
Quantum Mechanical Calculations of Electromigration Characteristics.
In Abstracts of 13th International Workshop on Stress-Induced Phenomena in Microelectronics (p. 16), Kyoto, Japan. (reposiTUm)

954.   Sverdlov, V., Osintsev, D., Selberherr, S. (2014).
Spin Behaviour in Strained Silicon Films.
In Abstracts of E-MRS Fall Meeting (p. 1), Warsaw, Poland. (reposiTUm)

953.   Ghosh, J., Sverdlov, V., Selberherr, S. (2014).
Spin Diffusion and the Role of Screening Effects in Semiconductors.
In 2014 International Workshop on Computational Electronics (IWCE). https://doi.org/10.1109/iwce.2014.6865825 (reposiTUm)

952.   Ghosh, J., Sverdlov, V., Selberherr, S. (2014).
Spin Diffusion in Silicon From a Ferromagnetic Contact.
In Book of Abstracts (p. 165), Vienna, Austria. (reposiTUm)

951.   Ghosh, J., Sverdlov, V., Selberherr, S. (2014).
Spin Injection in Silicon: The Role of Screening Effects.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 63–64), Urbana-Champaign, IL, USA. (reposiTUm)

950.   Sverdlov, V., Osintsev, D., Selberherr, S. (2014).
Spin Lifetime in Strained Silicon Films.
In 7th International Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 (pp. 57–58), Singapore, Singapore. https://doi.org/10.1109/ISTDM.2014.6874695 (reposiTUm)

949.   Filipovic, L., Selberherr, S. (2014).
Spray Pyrolysis Deposition for Gas Sensor Integration in the Backend of Standard CMOS Processes.
In 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Peking, Austria. https://doi.org/10.1109/icsict.2014.7021507 (reposiTUm)

948.   Schwaha, P., Nedjalkov, M., Selberherr, S., Sellier, J., Dimov, I., Georgieva, R. (2014).
Stochastic Formulation of Newton’s Acceleration.
In Large-Scale Scientific Computing: 9th International Conference, LSSC 2013 (pp. 178–185), Sozopol, Bulgaria. https://doi.org/10.1007/978-3-662-43880-0_19 (reposiTUm)

947.   Papaleo, S., Zisser, W., Singulani, A., Ceric, H., Selberherr, S. (2014).
Stress Analysis in Open TSVs After Nanoindentation.
In Abstracts (pp. 39–40), Thun, Switzerland. (reposiTUm)

946.   Filipovic, L., Selberherr, S. (2014).
Stress Considerations for System-On-Chip Gas Sensor Integration in CMOS Technology.
In Abstracts of 13th International Workshop on Stress-Induced Phenomena in Microelectronics (p. 41), Kyoto, Japan. (reposiTUm)

945.   Zisser, W., Ceric, H., Selberherr, S. (2014).
Stress Development and Void Evolution in Open TSVs.
In Abstracts (pp. 38–39), Thun, Switzerland. (reposiTUm)

944.   Papaleo, S., Zisser, W., Singulani, A., Ceric, H., Selberherr, S. (2014).
Stress Evolution During the Nanoindentation in Open TSVs.
In Abstracts of 13th International Workshop on Stress-Induced Phenomena in Microelectronics (p. 44), Kyoto, Japan. (reposiTUm)

943.   Sverdlov, V., Makarov, A., Selberherr, S. (2014).
Structural Optimization of MTJs for STT-MRAM and Oscillator Applications.
In Abstracts: 2014 CMOS Emerging Technologies Research Symposium (p. 19), Whistler, BC, Canada. (reposiTUm)

942.   Rudolf, F., Weinbub, J., Rupp, K., Morhammer, A., Selberherr, S. (2014).
Template-Based Mesh Generation for Semiconductor Devices.
In 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan. https://doi.org/10.1109/sispad.2014.6931602 (reposiTUm)

941.   Filipovic, L., Selberherr, S. (2014).
The Effects of Etching and Deposition on the Performance and Stress Evolution of Open Through Silicon Vias.
In Abstracts 25th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF) (p. 36), Maastricht. (reposiTUm)

940.   Sellier, J., Nedjalkov, M., Dimov, I., Selberherr, S. (2014).
The Multi-Dimensional Transient Challenge: The Wigner Particle Approach.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 119–120), Urbana-Champaign, IL, USA. (reposiTUm)

939.   Sellier, J., Nedjalkov, M., Dimov, I., Selberherr, S. (2014).
The Role of Annihilation in a Wigner Monte Carlo Approach.
In Large-Scale Scientific Computing: 9th International Conference, LSSC 2013 (pp. 186–193), Sozopol, Bulgaria. https://doi.org/10.1007/978-3-662-43880-0_20 (reposiTUm)

938.   Ellinghaus, P., Nedjalkov, M., Selberherr, S. (2014).
The Wigner Monte Carlo Method for Accurate Semiconductor Device Simulation.
In 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan. https://doi.org/10.1109/sispad.2014.6931576 (reposiTUm)

937.   Filipovic, L., Rudolf, F., Baer, E., Evanschitzky, P., Lorenz, J., Roger, F., Singulani, A., Minixhofer, R., Selberherr, S. (2014).
Three-Dimensional Simulation for the Reliability and Electrical Performance of Through-Silicon Vias.
In 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan. https://doi.org/10.1109/sispad.2014.6931633 (reposiTUm)

936.   Osintsev, D., Sverdlov, V., Selberherr, S. (2014).
Valley Degeneracy and Spin Lifetime Enhancement in Stressed Silicon Films.
In Book of Abstracts (p. 1), Washington, D.C., USA. (reposiTUm)

935.   Osintsev, D., Sverdlov, V., Neophytou, N., Selberherr, S. (2014).
Valley Splitting and Spin Lifetime Enhancement in Strained Silicon Heterostructures.
In Proceedings of International Winterschool on New Developments in Solid State Physics (pp. 88–89), Mauterndorf, Austria, Austria. (reposiTUm)

934.   Osintsev, D., Sverdlov, V., Neophytou, N., Selberherr, S. (2014).
Valley Splitting and Spin Lifetime Enhancement in Ultra-Scaled MOSFETs.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 59–60), Urbana-Champaign, IL, USA. (reposiTUm)

933.   Osintsev, D., Sverdlov, V., Neophytou, N., Selberherr, S. (2014).
Valley Splitting and Spin Lifetime Enhancement in in Strained Thin Silicon Films.
In 2014 International Workshop on Computational Electronics (IWCE). https://doi.org/10.1109/iwce.2014.6865824 (reposiTUm)

932.   Zisser, W., Ceric, H., Selberherr, S. (2014).
Void Evolution in Open TSVs.
In Abstracts of 13th International Workshop on Stress-Induced Phenomena in Microelectronics (p. 58), Kyoto, Japan. (reposiTUm)

931.   Orio, R., Selberherr, S. (2013).
About Voids in Copper Interconnects.
In Proceedings of the International Conference on Materials for Advanced Technologies (ICMAT 2013) (p. 8), Suntec, Singapore. (reposiTUm)

930.   Ceric, H., de Orio, R., Selberherr, S. (2013).
Analysis of Solder Bump Electromigration Reliability.
In Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore. https://doi.org/10.1109/ipfa.2013.6599258 (reposiTUm)

929.   Makarov, A., Sverdlov, V., Selberherr, S. (2013).
Bias-Field-Free Spin-Torque Oscillator Based on Two MgO-MTJs With a Shared Free Layer: Micromagnetic Modeling.
In Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN) (p. 2), Kaanapali. (reposiTUm)

928.   Osintsev, D., Sverdlov, V., Selberherr, S. (2013).
Calculation of the Electron Mobility and Spin Lifetime Enhancement by Strain in Thin Silicon Films.
In Proceedings of the 21st International Symposium Nanostructures (pp. 69–70), St. Petersburg, Russian federation. (reposiTUm)

927.   Molnar, M., Palankovski, V., Donoval, D., Kuzmik, J., Kovac, J., Chvala, A., Marek, J., Pribytny, P., Selberherr, S. (2013).
Characterization of InAlN/GaN HEMTs at Elevated Temperatures Supported by Numerical Simulation.
In Proceedings of the Workshop on Compound Semiconductor Devices and Integrated Circuits (pp. 135–136), Cardiff, Unided Kingdom, Austria. (reposiTUm)

926.   Makarov, A., Sverdlov, V., Selberherr, S. (2013).
Composite Magnetic Tunnel Junctions for Fast Memory Devices and Efficient Spin-Torque Nano-Oscillators.
In Abstracts Intl.Conf.on Information Engineering (ICIE) (p. 7), Hong Kong. (reposiTUm)

925.   Makarov, A., Sverdlov, V., Selberherr, S. (2013).
Concept of a Bias-Field-Free Spin-Torque Oscillator Based on Two MgO-MTJs.
In Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials (SSDM 2013) (pp. 796–797), Tsukuba, Austria. (reposiTUm)

924.   Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S. (2013).
Design and Applications of Magnetic Tunnel Junction Based Logic Circuits.
In Proceedings of the 2013 9th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), Villach, Austria. https://doi.org/10.1109/prime.2013.6603122 (reposiTUm)

923.   Zisser, W., Ceric, H., de Orio, R., Selberherr, S. (2013).
Electromigration Analyses of Open TSVs.
In 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, United Kingdom. https://doi.org/10.1109/sispad.2013.6650620 (reposiTUm)

922.   Ceric, H., Singulani, A., de Orio, R., Selberherr, S. (2013).
Electromigration Enhanced Growth of Intermetallic Compound in Solder Bumps.
In 2013 IEEE International Integrated Reliability Workshop Final Report, S. Lake Tahoe. https://doi.org/10.1109/iirw.2013.6804185 (reposiTUm)

921.   Zisser, W., Ceric, H., de Orio, R., Selberherr, S. (2013).
Electromigration Induced Stress in Open TSVs.
In 2013 IEEE International Integrated Reliability Workshop Final Report, S. Lake Tahoe. https://doi.org/10.1109/iirw.2013.6804179 (reposiTUm)

920.   Osintsev, D., Sverdlov, V., Selberherr, S. (2013).
Enhanced Intervalley Splitting and Reduced Spin Relaxation in Strained Thin Silicon Films.
In Bulletin American Physical Society (APS March Meeting) (p. 1), Los Angeles/USA, Austria. (reposiTUm)

919.   Osintsev, D., Sverdlov, V., Selberherr, S. (2013).
Evaluation of Spin Lifetime in Strained UT2B Silicon-On-Insulator MOSFETs.
In 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, United Kingdom. https://doi.org/10.1109/sispad.2013.6650618 (reposiTUm)

918.   Makarov, A., Sverdlov, V., Selberherr, S. (2013).
Fast Switching STT-MRAM Cells for Future Universal Memory.
In Abstracts Advanced Workshop on Frontiers in Electronics (WOFE) (p. 1), San Juan, Puerto Rico. (reposiTUm)

917.   Makarov, A., Sverdlov, V., Selberherr, S. (2013).
Geometry Optimization of Spin-Torque Oscillators Composed of Two MgO-MTJs With a Shared Free Layer.
In Proceedings of the International Conference on Nanoscale Magnetism (p. 69), Istanbul, Turkey. (reposiTUm)

916.   Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S. (2013).
Impact of Device Parameters on the Reliability of the Magnetic Tunnel Junction Based Implication Logic Gates.
In Proceedings of the 7th International Workshop "Functional Nanomaterials and Devices" (pp. 68–69), Kyiv, Ukraine. (reposiTUm)

915.   Ceric, H., Singulani, A., de Orio, R., Selberherr, S. (2013).
Impact of Intermetallic Compound on Solder Bump Electromigration Reliability.
In 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, United Kingdom. https://doi.org/10.1109/sispad.2013.6650577 (reposiTUm)

914.   Weinbub, J., Rupp, K., Selberherr, S. (2013).
Increasing Flexibility and Reusability of Finite Element Simulations With ViennaX.
In Abstracts 4th International Congress on Computational Engineering and Sciences (p. 1), Las Vegas, USA. (reposiTUm)

913.   Osintsev, D., Sverdlov, V., Selberherr, S. (2013).
Influence of Surface Roughness Scattering on Spin Lifetime in Silicon.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 76–77), Urbana-Champaign, IL, USA. (reposiTUm)

912.   Ghosh, J., Sverdlov, V., Selberherr, S. (2013).
Influence of a Space Charge Region on Spin Transport in Semiconductor.
In Abstracts International Semiconductor Device Research Symposium (ISDRS) (p. 27), College Park, MD, USA. (reposiTUm)

911.   de Orio, R., Ceric, H., Selberherr, S. (2013).
Influence of Temperature on the Standard Deviation of Electromigration Lifetimes.
In 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, United Kingdom. https://doi.org/10.1109/sispad.2013.6650617 (reposiTUm)

910.   Osintsev, D., Sverdlov, V., Selberherr, S. (2013).
Influence of the Valley Degeneracy on Spin Relaxation in Thin Silicon Films.
In 2013 14th International Conference on Ultimate Integration on Silicon (ULIS), Bologna, Austria. https://doi.org/10.1109/ulis.2013.6523525 (reposiTUm)

909.   Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S. (2013).
MRAM-based Logic Array for Large-Scale Non-Volatile Logic-In-Memory Applications.
In 2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), New York City, USA. https://doi.org/10.1109/nanoarch.2013.6623033 (reposiTUm)

908.   Makarov, A., Sverdlov, V., Selberherr, S. (2013).
Magnetic Oscillation of the Transverse Domain Wall in a Penta-Layer MgO-MTJ.
In Proceedings of the 21st International Symposium Nanostructures (pp. 338–339), St. Petersburg, Russian federation. (reposiTUm)

907.   Schrems, M., Schrank, C., Siegert, J., Kraft, J., Teva, J., Selberherr, S. (2013).
Metrology Requirements for Manufacturing 3D Integrated ICs.
In Proceedings International Conference on Frontiers of Characterization and Metrology for Nanoelectronics (FCMN) (pp. 137–139), Gaithersburg, USA. (reposiTUm)

906.   Sverdlov, V., Mahmoudi, H., Makarov, A., Osintsev, D., Weinbub, J., Windbacher, T., Selberherr, S. (2013).
Modeling Spin-Based Devices in Silicon.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 70–71), Urbana-Champaign, IL, USA. (reposiTUm)

905.   Filipovic, L., Selberherr, S., Mutinati, G., Brunet, E., Steinhauer, S., Köck, A., Teva, J., Kraft, J., Siegert, J., Schrank, F. (2013).
Modeling Spray Pyrolysis Deposition.
In Proceedings of the World Congress on Engineering (WCE) Vol II (pp. 987–992), London, UK. (reposiTUm)

904.   Molnar, M., Palankovski, V., Donoval, D., Kuzmik, J., Kovac, J., Chvala, A., Marek, J., Pribytny, P., Selberherr, S. (2013).
Modeling and Characterization of InAlN/GaN HEMTs at Elevated Temperatures.
In Proceedings of ADEPT International Conference on Advances in Electronic and Photonic Technologies (pp. 48–51), High Tatras, Spa Novy Smokovec, Slovakia. (reposiTUm)

903.   Filipovic, L., Selberherr, S., Mutinati, G., Brunet, E., Steinhauer, S., Köck, A., Teva, J., Kraft, J., Siegert, J., Schrank, F., Gspan, C., Grogger, W. (2013).
Modeling the Growth of Thin SnO2 Films Using Spray Pyrolysis Deposition.
In 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, United Kingdom. https://doi.org/10.1109/sispad.2013.6650611 (reposiTUm)

902.   Windbacher, T., Makarov, A., Mahmoudi, H., Sverdlov, V., Selberherr, S. (2013).
Novel Bias-Field-Free Large Gain Spin-Transfer Oscillator.
In Abstract Book of 58th Annual Conference of Magnetism and Magnetic Materials (MMM) (pp. 456–457), San Jose, CA, USA. (reposiTUm)

901.   Windbacher, T., Mahmoudi, H., Sverdlov, V., Selberherr, S. (2013).
Novel MTJ-based Shift Register for Non-Volatile Logic Applications.
In 2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), New York City, USA. https://doi.org/10.1109/nanoarch.2013.6623038 (reposiTUm)

900.   Windbacher, T., Mahmoudi, H., Sverdlov, V., Selberherr, S. (2013).
Novel Non-Volatile Magnetic Flip Flop.
In In Proceedings of Seventh International School on Spintronics and Quantum Information Technology (p. 1), Cracow. (reposiTUm)

899.   Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S. (2013).
Optimization of Spin-Transfer Torque Magnetic Tunnel Junction-Based Logic Gates.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 244–245), Urbana-Champaign, IL, USA. (reposiTUm)

898.   Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S. (2013).
Performance Analysis and Comparison of Two 1t/1mtj-Based Logic Gates.
In 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, United Kingdom. https://doi.org/10.1109/sispad.2013.6650600 (reposiTUm)

897.   Orio, R., Selberherr, S. (2013).
Physically Based Models of Electromigration.
In Proceedings of the International Conference on Electron Devices and Solid-State Circuits (EDSSC) (pp. 1–2), Hong Kong, Austria. (reposiTUm)

896.   Amoroso, S., Gerrer, L., Asenov, A., Sellier, J., Dimov, I., Nedjalkov, M., Selberherr, S. (2013).
Quantum Insights in Gate Oxide Charge-Trapping Dynamics in Nanoscale MOSFETs.
In 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, United Kingdom. https://doi.org/10.1109/sispad.2013.6650565 (reposiTUm)

895.   Osintsev, D., Sverdlov, V., Selberherr, S. (2013).
Reduction of Momentum and Spin Relaxation Rate in Strained Thin Silicon Films.
In 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC), Montreux, Austria. https://doi.org/10.1109/essderc.2013.6818886 (reposiTUm)

894.   Osintsev, D., Sverdlov, V., Selberherr, S. (2013).
Reduction of the Surface Roughness Induced Spin Relaxation in SOI Structures: An Analytical Approach.
In Conference Proceedings of the Ninth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits (p. 1), Granadea, Spanien, Austria. (reposiTUm)

893.   Windbacher, T., Mahmoudi, H., Sverdlov, V., Selberherr, S. (2013).
Rigorous Simulation Study of a Novel Non-Volatile Magnetic Flip-Flop.
In 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, United Kingdom. https://doi.org/10.1109/sispad.2013.6650651 (reposiTUm)

892.   Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S. (2013).
STT-MRAM-Based Reprogrammable Logic Gates for Large-Scale Non-Volatile Logic Integration.
In Proceedings of the International Conference on Nanoscale Magnetism (p. 208), Istanbul, Turkey. (reposiTUm)

891.   Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S. (2013).
STT-MTJ-Based Implication Logic Circuits for Non-Volatile Logic-In-Memory Applications.
In Book of Abstracts of the 2013 Symposium on CMOS Emerging Technologies (CMOS ET 2013) (p. 1), Whistler, BC, Canada. (reposiTUm)

890.   Osintsev, D., Sverdlov, V., Selberherr, S. (2013).
Shear Strain: An Efficient Spin Lifetime Booster in Advanced UTB2 SOI MOSFETs.
In Proceedings of the 7th International Workshop "Functional Nanomaterials and Devices" (pp. 64–65), Kyiv, Ukraine. (reposiTUm)

889.   Sverdlov, V., Selberherr, S. (2013).
Silicon Spintronics and Its Applications.
In Proceedings of the 7th International Workshop "Functional Nanomaterials and Devices" (pp. 51–52), Kyiv, Ukraine. (reposiTUm)

888.   Makarov, A., Sverdlov, V., Osintsev, D., Selberherr, S. (2013).
Simulation of Magnetic Oscillations in a System of Two MTJs With a Shared Free Layer.
In Abstracts Book of The 21st International Conference on Soft Magnetic Materials (p. 101), Turin, Italy. (reposiTUm)

887.   Ghosh, J., Windbacher, T., Sverdlov, V., Selberherr, S. (2013).
Spin Injection and Diffusion in Silicon Based Devices From a Space Charge Layer.
In Abstract Book of 58th Annual Conference of Magnetism and Magnetic Materials (MMM) (pp. 713–714), San Jose, CA, USA. (reposiTUm)

886.   Osintsev, D., Sverdlov, V., Selberherr, S. (2013).
Spin Lifetime Enhancement by Shear Strain in Thin Silicon-On-Insulator Films.
In 223th ECS Meeting (p. 1), Montreal. (reposiTUm)

885.   Osintsev, D., Sverdlov, V., Selberherr, S. (2013).
Spin Lifetime Enhancement in Strained Thin Silicon Films.
In Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN) (p. 2), Kaanapali. (reposiTUm)

884.   Schwaha, P., Nedjalkov, M., Selberherr, S., Dimov, I., Georgieva, R. (2013).
Stochastic Alternative to Newton's Acceleration.
In Abstracts International Conference on Large-Scale Scientific Computations (LSSC) (pp. 77–78), Sozopol, Bulgaria. (reposiTUm)

883.   Singulani, A., Ceric, H., Selberherr, S. (2013).
Stress Estimation in Open Tungsten TSV.
In 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, United Kingdom. https://doi.org/10.1109/sispad.2013.6650575 (reposiTUm)

882.   Makarov, A., Sverdlov, V., Selberherr, S. (2013).
Structural Optimization of MTJs With a Composite Free Layer.
In Spintronics VI (pp. 88132Q-1–88132Q-9), San Diego, United States. https://doi.org/10.1117/12.2025568 (reposiTUm)

881.   Windbacher, T., Triebl, O., Osintsev, D., Makarov, A., Sverdlov, V., Selberherr, S. (2013).
Switching Optimization of an Electrically Read- And Writable Magnetic Logic Gate.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 238–239), Urbana-Champaign, IL, USA. (reposiTUm)

880.   Sellier, J., Nedjalkov, M., Dimov, I., Selberherr, S. (2013).
The Role of Annihilation in a Wigner Monte Carlo Approach.
In Abstracts International Conference on Large-Scale Scientific Computations (LSSC) (p. 78), Sozopol, Bulgaria. (reposiTUm)

879.   Schwaha, P., Sellier, J., Nedjalkov, M., Dimov, I., Selberherr, S. (2013).
The Ultimate Equivalence Between Coherent Quantum and Classical Regimes.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 152–153), Urbana-Champaign, IL, USA. (reposiTUm)

878.   Tillet, P., Rupp, K., Selberherr, S., Lin, C. (2013).
Towards Performance-Portable, Scalable, and Convenient Linear Algebra.
In Proceedings of 5th USENIX Workshop on Hot Topics in Parallelism (pp. 1–8), San Jose, CA, USA. (reposiTUm)

877.   Makarov, A., Sverdlov, V., Selberherr, S. (2013).
Transverse Domain Wall Formation in a Free Layer: A Mechanism for Switching Failure in a MTJ-based STT-MRAM.
In Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore. https://doi.org/10.1109/ipfa.2013.6599165 (reposiTUm)

876.   Sellier, J., Nedjalkov, M., Dimov, I., Selberherr, S. (2013).
Two-Dimensional Transient Wigner Particle Model.
In 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, United Kingdom. https://doi.org/10.1109/sispad.2013.6650660 (reposiTUm)

875.   Osintsev, D., Makarov, A., Sverdlov, V., Selberherr, S. (2013).
Using Strain to Increase the Reliability of Scaled Spin MOSFETs.
In Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore. https://doi.org/10.1109/ipfa.2013.6599272 (reposiTUm)

874.   Rudolf, F., Rupp, K., Selberherr, S. (2013).
ViennaMesh - A Highly Flexible Meshing Framework.
In Abstracts 4th International Congress on Computational Engineering and Sciences (p. 1), Las Vegas, USA. (reposiTUm)

873.   Weinbub, J., Rupp, K., Selberherr, S. (2012).
A Flexible Execution Framework for High-Performance TCAD Applications.
In 2012 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 400–403), Denver, Colorado, United States. (reposiTUm)

872.   Weinbub, J., Rupp, K., Selberherr, S. (2012).
A Generic Multi-Dimensional Run-Time Data Structure for High-Performance Scientific Computing.
In Proceedings of the World Congress on Engineering (WCE) (pp. 1076–1081), London, UK. (reposiTUm)

871.   Filipovic, L., Selberherr, S. (2012).
A Monte Carlo Simulator for Non-Contact Mode Atomic Force Microscopy.
In Large-Scale Scientific Computing: 8th International Conference, LSSC 2011 (pp. 447–454), Sozopol, Bulgaria. https://doi.org/10.1007/978-3-642-29843-1_50 (reposiTUm)

870.   Mahmoudi, H., Sverdlov, V., Selberherr, S. (2012).
A Robust and Efficient MTJ-based Spintronic IMP Gate for New Logic Circuits and Large-Scale Integration.
In 2012 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 225–228), Denver, Colorado, United States. (reposiTUm)

869.   Ceric, H., De Orio, R., Zisser, W., Selberherr, S. (2012).
Ab Initio Method for Electromigration Analysis.
In 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, Singapore. https://doi.org/10.1109/ipfa.2012.6306306 (reposiTUm)

868.   Tillet, P., Rupp, K., Selberherr, S. (2012).
An Automatic OpenCL Compute Kernel Generator for Basic Linear Algebra Operations.
In HPC '12 Proceedings of the 2012 Symposium on High Performance Computing (p. 7), Orlando, FL, USA. (reposiTUm)

867.   de Orio, R., Ceric, H., Selberherr, S. (2012).
Analysis of Resistance Change Development Due to Voiding in Copper Interconnects Ended by a Through Silicon Via.
In ECS Transactions (pp. 273–280), Brasilia, Brazil. https://doi.org/10.1149/04901.0273ecst (reposiTUm)

866.   Ceric, H., Orio, R., Selberherr, S. (2012).
Atomistic Method for Analysis of Electromigration.
In Proceedings of the IEEE International Interconnect Technology Conference (p. 3), San Jose, USA. (reposiTUm)

865.   Molnar, M., Donnarumma, G., Palankovski, V., Kuzmik, J., Donoval, D., Kovac, J., Selberherr, S. (2012).
Characterization, Modeling and Simulation of In0.12Al0.88N/GaN HEMTs.
In Proceedings of the 18th International Conference in the Series of the Solid State Workshops (pp. 190–194), High Tatras, Slovakia. (reposiTUm)

864.   Osintsev, D., Makarov, A., Sverdlov, V., Selberherr, S. (2012).
Efficient Simulations of the Transport Properties of Spin Field-Effect Transistors Built on Silicon Fins.
In Large-Scale Scientific Computing: 8th International Conference, LSSC 2011 (pp. 630–637), Sozopol, Bulgaria. https://doi.org/10.1007/978-3-642-29843-1_72 (reposiTUm)

863.   Filipovic, L., Selberherr, S. (2012).
Electric Field Based Simulations of Local Oxidation Nanolithography Using Atomic Force Microscopy in a Level Set Environment.
In ECS Transactions (pp. 265–272), Ouro Preto. https://doi.org/10.1149/04901.0265ecst (reposiTUm)

862.   Osintsev, D., Baumgartner, O., Stanojevic, Z., Sverdlov, V., Selberherr, S. (2012).
Electric Field and Strain Effects on Surface Roughness Induced Spin Relaxation in Silicon Field-Effect Transistors.
In Proceedings of the 24th European Modeling and Simulation Symposium (pp. 156–162), Vienna, Austria, Austria. (reposiTUm)

861.   Orio, R., Ceric, H., Selberherr, S. (2012).
Electromigration Failure in a Copper Dual-Damascene Structure With a Through Silicon Via.
In Proceedings of the 23rd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis (pp. 1981–1986), Cagliari, Italy. (reposiTUm)

860.   Molnar, M., Donnarumma, G., Palankovski, V., Kuzmik, J., Donoval, D., Kovac, J., Selberherr, S. (2012).
Electrothermal Analysis of In<inf>0.12</Inf>Al<inf>0.88</Inf>N/GaN HEMTs.
In The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems, Smolenice Castle, Slovakia. https://doi.org/10.1109/asdam.2012.6418556 (reposiTUm)

859.   Makarov, A., Selberherr, S., Sverdlov, V. (2012).
Emerging Non-Volatile Memories for Ultra-Low Power Applications.
In Tagungsband zur Informationstagung Mikroelektronik 12 (pp. 21–24), Vienna, Austria. (reposiTUm)

858.   Sverdlov, V., Makarov, A., Selberherr, S. (2012).
Fast Switching in MTJs With a Composite Free Layer.
In Abstracts of BIT's 2nd Annual World Congress of Nanoscience and Nanotechnology 2012 (p. 291), Qingdao, China. (reposiTUm)

857.   de Orio, R., Selberherr, S. (2012).
Formation and Movement of Voids in Copper Interconnect Structures.
In 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Peking, Austria. https://doi.org/10.1109/icsict.2012.6467675 (reposiTUm)

856.   Windbacher, T., Osintsev, D., Makarov, A., Sverdlov, V., Selberherr, S. (2012).
Fully Electrically Read- Write Magneto Logic Gates.
In Book of Abstracts (p. 1), Crete, Greece. (reposiTUm)

855.   Makarov, A., Sverdlov, V., Selberherr, S. (2012).
Geometry Dependence of the Switching Time in MTJs With a Composite Free Layer.
In Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS) (p. 21), Kona. (reposiTUm)

854.   Selberherr, S. (2012).
Giving Silicon a Spin.
In Abstracts International Conference on Enabling Science and Nanotechnology (ESciNano 2012) (p. 1), Johor Bahru, Malaysia. (reposiTUm)

853.   Makarov, A., Sverdlov, V., Selberherr, S. (2012).
High Thermal Stability and Low Switching Energy Barrier in Spin-Transfer Torque RAM With Composite Free Layer.
In Extended Abstracts of 2012 International Conference on Solid State Devices and Materials (p. 2), Nagoya, Japan. (reposiTUm)

852.   Donnarumma, G., Palankovski, V., Selberherr, S. (2012).
Influence of Bandgap Narrowing and Carrier Lifetimes on the Forward Current-Voltage Characteristics of a 4h-SiC P-I-N Diode.
In 2012 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 125–128), Denver, Colorado, United States. (reposiTUm)

851.   Mahmoudi, H., Sverdlov, V., Selberherr, S. (2012).
Influence of Geometry on Memristive Behavior of the Domain Wall Spintronic Memristors and Its Applications for Measurements.
In Proceedings of International Conference on Superconductivity and Magnetism (ICSM 2012) (p. 1), Istanbul, Turkey. (reposiTUm)

850.   Sverdlov, V., Selberherr, S. (2012).
MOSFET and Spin Transistor Simulations.
In Abstract of 2012 CMOS Emerging Technologies (p. 1), Vancouver, BC Canada. (reposiTUm)

849.   Mahmoudi, H., Sverdlov, V., Selberherr, S. (2012).
MTJ-based Implication Logic Gates and Circuit Architecture for Large-Scale Spintronic Stateful Logic Systems.
In 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC), Montreux, Austria. https://doi.org/10.1109/essderc.2012.6343381 (reposiTUm)

848.   Makarov, A., Sverdlov, V., Selberherr, S. (2012).
MTJs With a Composite Free Layer for High-Speed Spin Transfer Torque RAM: Micromagnetic Simulations.
In 2012 15th International Workshop on Computational Electronics. https://doi.org/10.1109/iwce.2012.6242842 (reposiTUm)

847.   Makarov, A., Sverdlov, V., Selberherr, S. (2012).
Micromagnetic Simulations of an MTJ With a Composite Free Layer for High-Speed Spin Transfer Torque RAM.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 225–226), Urbana-Champaign, IL, USA. (reposiTUm)

846.   Makarov, A., Sverdlov, V., Selberherr, S. (2012).
Modeling Emerging Non-Volatile Memories: Current Trends and Challenges.
In Physics Procedia (pp. 99–104), Macao, China. https://doi.org/10.1016/j.phpro.2012.03.056 (reposiTUm)

845.   Osintsev, D., Sverdlov, V., Selberherr, S. (2012).
Modeling Spintronic Effects in Silicon.
In Abstracts International Workshop on Mathematics for Semiconductor Heterostructures (MSH) (p. 3), Berlin, Germany. (reposiTUm)

844.   Orio, R., Ceric, H., Selberherr, S. (2012).
Modeling of Electromigration Induced Resistance Change in Three-Dimensional Interconnects With Through Silicon Vias.
In 2012 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 268–271), Denver, Colorado, United States. (reposiTUm)

843.   Ceric, H., Orio, R., Zisser, W., Schnitzer, V., Selberherr, S. (2012).
Modeling of Microstructural Effects on Electromigration Failure.
In Abstracts of 12th International Workshop on Stress-Induced Phenomena in Microelectronics (pp. 50–51), Kyoto, Japan. (reposiTUm)

842.   Makarov, A., Sverdlov, V., Selberherr, S. (2012).
New Trends in Microelectronics: Towards an Ultimate Memory Concept.
In 2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS). https://doi.org/10.1109/iccdcs.2012.6188899 (reposiTUm)

841.   Makarov, A., Sverdlov, V., Selberherr, S. (2012).
New Trends in Microelectronics: Towards an Ultimate Memory Concept.
In 2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS), Playa del Carmen. https://doi.org/10.1109/iccdcs.2012.6188887 (reposiTUm)

840.   Mahmoudi, H., Sverdlov, V., Selberherr, S. (2012).
Novel Memristive Charge- And Flux-Based Sensors.
In Proceedings of the 8th Conference on Ph.D. Research in Microelectronics, Electronics (p. 4), Aachen, Germany. (reposiTUm)

839.   Schwaha, P., Nedjalkov, M., Selberherr, S., Dimov, I. (2012).
Particle-Grid Techniques for Semiclassical and Quantum Transport Simulations.
In 2012 15th International Workshop on Computational Electronics. https://doi.org/10.1109/iwce.2012.6242860 (reposiTUm)

838.   Nedjalkov, M., Schwaha, P., Selberherr, S., Ferry, D. (2012).
Phonon Decoherence in Wigner-Boltzmann Transport.
In Proceedings of International Winterschool on New Developments in Solid State Physics (pp. 61–62), Mauterndorf, Austria, Austria. (reposiTUm)

837.   Schwaha, P., Nedjalkov, M., Selberherr, S., Dimov, I. (2012).
Phonon-Induced Decoherence in Electron Evolution.
In Large-Scale Scientific Computing: 8th International Conference, LSSC 2011 (pp. 472–479), Sozopol, Bulgaria. https://doi.org/10.1007/978-3-642-29843-1_53 (reposiTUm)

836.   Makarov, A., Sverdlov, V., Selberherr, S. (2012).
Recent Developments in Advanced Memory Modeling.
In 2012 28th International Conference on Microelectronics Proceedings, Beograd. https://doi.org/10.1109/miel.2012.6222795 (reposiTUm)

835.   Osintsev, D., Baumgartner, O., Stanojevic, Z., Sverdlov, V., Selberherr, S. (2012).
Reduction of Surface Roughness Induced Spin Relaxation in MOSFETs by Strain.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 229–230), Urbana-Champaign, IL, USA. (reposiTUm)

834.   Osintsev, D., Baumgartner, O., Stanojevic, Z., Sverdlov, V., Selberherr, S. (2012).
Reduction of Surface Roughness Induced Spin Relaxation in SOI MOSFETs.
In 2012 15th International Workshop on Computational Electronics. https://doi.org/10.1109/iwce.2012.6242850 (reposiTUm)

833.   Makarov, A., Sverdlov, V., Selberherr, S. (2012).
Reduction of the Switching Current in Spin Transfer Torque Random Access Memory.
In Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Into the Cross Currents (p. 49), Corsica, France. (reposiTUm)

832.   Nedjalkov, M., Schwaha, P., Selberherr, S., Ferry, D., Vasileska, D., Dollfus, P., Querlioz, D. (2012).
Role of the Physical Scales on the Transport Regime.
In 2012 15th International Workshop on Computational Electronics. https://doi.org/10.1109/iwce.2012.6242848 (reposiTUm)

831.   Makarov, A., Sverdlov, V., Selberherr, S. (2012).
STT-RAM With a Composite Free Layer: High Thermal Stability, Low Switching Barrier, and Sharp Switching Time Distribution.
In Abstract of Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012) (p. H4), Sydney, Australia. (reposiTUm)

830.   Filipovic, L., Selberherr, S. (2012).
Simulation of Silicon Nanopatterning Using Nc-Afm.
In Abstracts 15th International Conference on non-contact Atomic Force Microscopy (nc-AFM) (p. 108), Cesky Krumlov. (reposiTUm)

829.   Filipovic, L., Selberherr, S. (2012).
Simulations of Local Oxidation Nanolithography by AFM Based on the Generated Electric Field.
In 2012 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 189–192), Denver, Colorado, United States. (reposiTUm)

828.   Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S. (2012).
Simulations of an Electrical Read-Write Operation of a Magnetic XOR Gate.
In Abstract of Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012) (p. J3), Sydney, Australia. (reposiTUm)

827.   Lukash, M., Rupp, K., Selberherr, S. (2012).
Sparse Approximate Inverse Preconditioners for Iterative Solvers on GPUs.
In HPC '12 Proceedings of the 2012 Symposium on High Performance Computing (p. 7), Orlando, FL, USA. (reposiTUm)

826.   Mahmoudi, H., Sverdlov, V., Selberherr, S. (2012).
Spintronic Stateful Logic Gates Using Magnetic Tunnel Junctions Written by Spin-Transfer Torque.
In Book of Abstracts (p. P-6), Eindhoven, the Netherlands. (reposiTUm)

825.   Mahmoudi, H., Sverdlov, V., Selberherr, S. (2012).
State Drift Optimization of Memristive Stateful IMP Logic Gates.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 243–244), Urbana-Champaign, IL, USA. (reposiTUm)

824.   Osintsev, D., Stanojevic, Z., Baumgartner, O., Sverdlov, V., Selberherr, S. (2012).
Strain-Induced Reduction of Surface Roughness Dominated Spin Relaxation in MOSFETs.
In AIP Conference Proceedings, Wien, Österreich, Austria. https://doi.org/10.1063/1.4848413 (reposiTUm)

823.   Makarov, A., Sverdlov, V., Selberherr, S. (2012).
Study of Self-Accelerating Switching in MTJs With Composite Free Layer by Micromagnetic Simulations.
In 2012 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 229–232), Denver, Colorado, United States. (reposiTUm)

822.   Osintsev, D., Sverdlov, V., Selberherr, S. (2012).
Surface Roughness Induced Reduction of Spin Relaxation in Thin Silicon Films.
In Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)S) (p. 33), Kona. (reposiTUm)

821.   Osintsev, D., Sverdlov, V., Makarov, A., Selberherr, S. (2012).
Surface Roughness Induced Spin Scattering and Relaxation in Silicon SOI MOSFETs.
In Abstract of Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012) (p. B3), Sydney, Australia. (reposiTUm)

820.   Sverdlov, V., Makarov, A., Selberherr, S. (2012).
Switching Energy Barrier and Current Reduction in MTJs With Composite Free Layer.
In Bulletin American Physical Society (APS March Meeting 2012) (p. 1), Los Angeles/USA, Austria. (reposiTUm)

819.   Ceric, H., Orio, R., Selberherr, S. (2012).
TCAD Study of Electromigration Failure Modes in Sn-Based Solder Bumps.
In 2012 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 264–267), Denver, Colorado, United States. (reposiTUm)

818.   Singulani, A., Ceric, H., Selberherr, S. (2012).
Thermo-Mechanical Simulations of an Open Tungsten TSV.
In 2012 IEEE 14th Electronics Packaging Technology Conference (EPTC), Singapore. https://doi.org/10.1109/eptc.2012.6507061 (reposiTUm)

817.   Weinbub, J., Rupp, K., Selberherr, S. (2012).
Towards Distributed Heterogenous High-Performance Computing With ViennaCL.
In Large-Scale Scientific Computing: 8th International Conference, LSSC 2011 (pp. 359–367), Sozopol, Bulgaria. https://doi.org/10.1007/978-3-642-29843-1_41 (reposiTUm)

816.   Weinbub, J., Rupp, K., Filipovic, L., Makarov, A., Selberherr, S. (2012).
Towards a Free Open Source Process and Device Simulation Framework.
In 2012 15th International Workshop on Computational Electronics. https://doi.org/10.1109/iwce.2012.6242867 (reposiTUm)

815.   Osintsev, D., Sverdlov, V., Selberherr, S. (2012).
Using Strain for the Reduction of Surface Roughness Induced Spin Relaxation in Field-Effect Transistors With Thin Silicon Body.
In Conference Proceedings of the VIII Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits (pp. 77–78), Granadea, Spanien, Austria. (reposiTUm)

814.   Weinbub, J., Rupp, K., Selberherr, S. (2012).
Utilizing Modern Programming Techniques and the Boost Libraries for Scientific Software Development.
In Proceedings of C++Now (2012) (p. 10), Aspen, CO, USA. (reposiTUm)

813.   Osintsev, D., Baumgartner, O., Stanojevic, Z., Sverdlov, V., Selberherr, S. (2012).
Valley Splitting and Spin Relaxation in Strained Silicon Quantum Wells.
In Book of Abstracts (p. P-27), Eindhoven, the Netherlands. (reposiTUm)

812.   Weinbub, J., Cervenka, J., Rupp, K., Selberherr, S. (2011).
A Generic High-Quality Meshing Framework.
In Proceedings of the 11th US National Congress on Computational Mechanics (USNCCM) (p. 1), Minneapolis, USA. (reposiTUm)

811.   Filipovic, L., Selberherr, S. (2011).
A Level Set Simulator for Nanooxidation Using Non-Contact Atomic Force Microscopy.
In 2011 International Conference on Simulation of Semiconductor Processes and Devices, Osaka, Japan. https://doi.org/10.1109/sispad.2011.6035031 (reposiTUm)

810.   Filipovic, L., Nedjalkov, M., Selberherr, S. (2011).
A Monte Carlo Simulator for Non-Contact Atomic Force Microscopy.
In Abstracts Intl. Conf. on Large-Scale Scientific Computations (pp. 42–43), Sozopol, Bulgaria. (reposiTUm)

809.   Filipovic, L., Selberherr, S. (2011).
A Two-Dimensional Lorentzian Distribution for an Atomic Force Microscopy Simulator.
In Abstracts IMACS Seminar on Monte Carlo Methods (MCM) (p. 30), Reading. (reposiTUm)

808.   de Orio, R., Ceric, H., Selberherr, S. (2011).
A Compact Model for Early Electromigration Lifetime Estimation.
In 2011 International Conference on Simulation of Semiconductor Processes and Devices, Osaka, Japan. https://doi.org/10.1109/sispad.2011.6035040 (reposiTUm)

807.   Filipovic, L., Ceric, H., Cervenka, J., Selberherr, S. (2011).
A Simulator for Local Anodic Oxidation of Silicon Surfaces.
In 2011 24th Canadian Conference on Electrical and Computer Engineering(CCECE), Saskatoon, SK, Canada. https://doi.org/10.1109/ccece.2011.6030543 (reposiTUm)

806.   Makarov, A., Sverdlov, V., Osintsev, D., Selberherr, S. (2011).
About the Switching Process in Magnetic Tunnel Junctions With Two Fixed Layers and One Soft Magnetic Layer.
In Abstracts Book of The 20th International Conference on Soft Magnetic Materials (p. 444), Turin, Italy. (reposiTUm)

805.   Osintsev, D., Makarov, A., Selberherr, S., Sverdlov, V. (2011).
An InAs-Based Spin Field-Effect Transistor: A Path to Room Temperature Operation.
In Abstracts International Symposium on Advanced Nanostructures and Nano-Devices (ISANN) (p. 2), Kaanapali,Hawaii, USA. (reposiTUm)

804.   Osintsev, D., Sverdlov, V., Stanojevic, Z., Selberherr, S. (2011).
Ballistic Spin Field Effect Transistor Based on Silicon Nanowires.
In Bulletin American Physical Society (APS March Meeting 2011), Los Angeles/USA, Austria. (reposiTUm)

803.   Osintsev, D., Sverdlov, V., Stanojevic, Z., Makarov, A., Selberherr, S. (2011).
Ballistic Spin Field-Effect Transistors Built on Silicon Fins.
In Conference Proceedings of the VII Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits (pp. 59–60), Granada, Austria. (reposiTUm)

802.   Osintsev, D., Sverdlov, V., Makarov, A., Selberherr, S. (2011).
Ballistic Transport Properties of Spin Field-Effect Transistors Built on Silicon and InAs Fins.
In ECS Transactions (pp. 155–162), Ouro Preto. https://doi.org/10.1149/1.3615189 (reposiTUm)

801.   Osintsev, D., Sverdlov, V., Makarov, A., Selberherr, S. (2011).
Ballistic Transport in Spin Field-Effect Transistors Built on Si and InAs.
In Proceedings of International School and Conference on Spintronics and Quantum Information Technology (p. 229), Matsue, Japan. (reposiTUm)

800.   Osintsev, D., Sverdlov, V., Makarov, A., Selberherr, S. (2011).
Ballistic Transport in Spin Field-Effect Transistors Built on Silicon.
In Abstracts of Advanced Workshop on Spin and Charge Properties of Low Dimensional Systems (p. 1), Brasov, Romania. (reposiTUm)

799.   de Orio, R., Selberherr, S. (2011).
Compact Modeling of Interconnect Reliability.
In 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, Hong Kong, Austria. https://doi.org/10.1109/edssc.2011.6117564 (reposiTUm)

798.   Weinbub, J., Rupp, K., Selberherr, S. (2011).
Distributed Heterogenous High-Performance Computing With ViennaCL.
In Abstracts Intl. Conf. on Large-Scale Scientific Computations (pp. 88–90), Sozopol, Bulgaria. (reposiTUm)

797.   Mahmoudi, H., Sverdlov, V., Selberherr, S. (2011).
Domain-Wall Spintronic Memristor for Capacitance and Inductance Sensing.
In Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011) (p. 2), College Park, MD, USA. (reposiTUm)

796.   Makarov, A., Sverdlov, V., Osintsev, D., Selberherr, S. (2011).
Fast Switching in Magnetic Tunnel Junctions With Double Barrier Layer.
In Extended Abstracts of 2011 International Conference on Solid State Devices and Materials (p. 2), Nagoya, Japan. (reposiTUm)

795.   Weinbub, J., Cervenka, J., Rupp, K., Selberherr, S. (2011).
High-Quality Mesh Generation Based on Orthogonal Software Modules.
In 2011 International Conference on Simulation of Semiconductor Processes and Devices, Osaka, Japan. https://doi.org/10.1109/sispad.2011.6035078 (reposiTUm)

794.   Poschalko, C., Selberherr, S. (2011).
Influence of the PCB Dielectric Material on the Coupling of PCB Traces to Enclosure Cavities.
In Proceedings of Asia-Pacific International Symposium on Electromagnetic Compatibility (p. 4), Beijing. (reposiTUm)

793.   Ceric, H., de Orio, R., Selberherr, S. (2011).
Integration of Atomistic and Continuum-Level Electromigration Models.
In 18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore. https://doi.org/10.1109/ipfa.2011.5992749 (reposiTUm)

792.   Ceric, H., Orio, R., Selberherr, S. (2011).
Interconnect Reliability Dependence on Fast Diffusivity Paths.
In Proceedings of the International Conference on Materials for Advanced Technologies (ICMAT 2011) (p. 33), Suntec, Singapore. (reposiTUm)

791.   Makarov, A., Sverdlov, V., Osintsev, D., Selberherr, S. (2011).
Micromagnetic Modeling of Penta-Layer Magnetic Tunnel Junctions With a Composite Soft Layer.
In Abstracts of Advanced Workshop on Spin and Charge Properties of Low Dimensional Systems (p. 1), Brasov, Romania. (reposiTUm)

790.   De Orio, R., Ceric, H., Selberherr, S. (2011).
Modeling Electromigration Lifetimes of Copper Interconnects.
In ECS Transactions (pp. 163–169), Ouro Preto. https://doi.org/10.1149/1.3615190 (reposiTUm)

789.   Makarov, A., Sverdlov, V., Kryzhanovsky, D., Girkin, M., Selberherr, S. (2011).
Modeling of Non-Volatile Memory Cells of RRAM Type on High Performance Computer Systems With the Monte-Carlo Method.
In Book of Abstracts: Parallel Computing Technologies (PaVT) (p. 1), Moscow, Russia. (reposiTUm)

788.   Makarov, A., Selberherr, S., Sverdlov, V. (2011).
Modeling of Advanced Memories.
In 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, Hong Kong, Austria. https://doi.org/10.1109/edssc.2011.6117568 (reposiTUm)

787.   Makarov, A., Sverdlov, V., Osintsev, D., Weinbub, J., Selberherr, S. (2011).
Modeling of the Advanced Spin Transfer Torque Memory: Macro- And Micromagnetic Simulations.
In Proceedings of the 25th European Simulation and Modelling Conference (pp. 177–181), Guimaraes, Portugal. (reposiTUm)

786.   Makarov, A., Sverdlov, V., Osintsev, D., Selberherr, S. (2011).
Modeling of the Switching Process in Multi-Layered Magnetic Tunnel Junctions.
In Proceedings of International School and Conference on Spintronics and Quantum Information Technology (p. 238), Matsue, Japan. (reposiTUm)

785.   Schwaha, P., Nedjalkov, M., Selberherr, S., Dimov, I. (2011).
Monte Carlo Investigations of Electron Decoherence Due to Phonons.
In Abstracts IMACS Seminar on Monte Carlo Methods (MCM) (p. 48), Reading. (reposiTUm)

784.   Ceric, H., de Orio, R., Schanovsky, F., Zisser, W., Selberherr, S. (2011).
Multilevel Simulation for the Investigation of Fast Diffusivity Paths.
In 2011 International Conference on Simulation of Semiconductor Processes and Devices, Osaka, Japan. https://doi.org/10.1109/sispad.2011.6035068 (reposiTUm)

783.   Makarov, A., Sverdlov, V., Osintsev, D., Selberherr, S. (2011).
Optimization of the Penta-Layer Magnetic Tunnel Junction for Fast STTRAM Switching.
In Abstracts International Symposium on Advanced Nanostructures and Nano-Devices (ISANN) (p. 2), Kaanapali,Hawaii, USA. (reposiTUm)

782.   Filipovic, L., Ertl, O., Selberherr, S. (2011).
Parallelization Strategy for Hierarchical Run Length Encoded Data Structures.
In Proceedings of the IASTED International Conference on Parallel and Distributed Computing and Networks (PDCN 2011) (pp. 131–138), Innsbruck. (reposiTUm)

781.   Schwaha, P., Nedjalkov, M., Selberherr, S., Dimov, I. (2011).
Phonon-Induced Decoherence in Electron Evolution.
In Abstracts Intl. Conf. on Large-Scale Scientific Computations (pp. 74–75), Sozopol, Bulgaria. (reposiTUm)

780.   Osintsev, D., Sverdlov, V., Makarov, A., Selberherr, S. (2011).
Properties of InAs- And Silicon-Based Ballistic Spin Field-Effect Transistors Operated at Elevated Temperature.
In Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011) (p. 2), College Park, MD, USA. (reposiTUm)

779.   Osintsev, D., Sverdlov, V., Makarov, A., Selberherr, S. (2011).
Properties of InAs- And Silicon-Based Ballistic Spin Field-Effect Transistors.
In 2011 International Conference on Simulation of Semiconductor Processes and Devices, Osaka, Japan. https://doi.org/10.1109/sispad.2011.6035049 (reposiTUm)

778.   Osintsev, D., Sverdlov, V., Stanojevic, Z., Makarov, A., Weinbub, J., Selberherr, S. (2011).
Properties of Silicon Ballistic Spin Fin-Based Field-Effect Transistors.
In Meeting Abstracts (p. 1), Honolulu, Austria. (reposiTUm)

777.   Stanojevic, Z., Sverdlov, V., Selberherr, S. (2011).
Subband Structure Engineering in Silicon-On-Insulator FinFETs Using Confinement.
In ECS Transactions (pp. 117–122), Montreal. https://doi.org/10.1149/1.3570785 (reposiTUm)

776.   Makarov, A., Sverdlov, V., Osintsev, D., Selberherr, S. (2011).
Switching Time and Current Reduction Using a Composite Free Layer in Magnetic Tunnel Junctions.
In Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011) (p. 2), College Park, MD, USA. (reposiTUm)

775.   Osintsev, D., Makarov, A., Sverdlov, V., Selberherr, S. (2011).
Transport Modeling in Spin Field-Effect Transistors Built on Silicon Fins.
In Abstracts Intl. Conf. on Large-Scale Scientific Computations (p. 64), Sozopol, Bulgaria. (reposiTUm)

774.   Osintsev, D., Sverdlov, V., Stanojevic, Z., Makarov, A., Selberherr, S. (2011).
Transport Properties of Spin Field-Effect Transistors Built on Si and InAs.
In Ulis 2011 Ultimate Integration on Silicon, Bologna, Austria. https://doi.org/10.1109/ulis.2011.5757998 (reposiTUm)

773.   Weinbub, J., Schwaha, P., Heinzl, R., Stimpfl, F., Selberherr, S. (2010).
A Dispatched Covariant Type System for Numerical Applications in C++.
In AIP Conference Proceedings (pp. 1663–1666), Korfu, Griechenland. (reposiTUm)

772.   Weinbub, J., Heinzl, R., Schwaha, P., Stimpfl, F., Selberherr, S. (2010).
A Lightweight Material Library for Scientific Computing in C++.
In Proceedings of the European Simulation and Modelling Conference (ESM) (pp. 454–458), Malta. (reposiTUm)

771.   Mach, G., Heinzl, R., Schwaha, P., Stimpfl, F., Weinbub, J., Selberherr, S. (2010).
A Modular Tool Chain for High Performance CFD Simulations in Intracranial Aneurysms.
In AIP Conference Proceedings (pp. 1647–1650), Korfu, Griechenland. (reposiTUm)

770.   Makarov, A., Sverdlov, V., Selberherr, S. (2010).
A Monte Carlo Simulation of Reproducible Hysteresis in RRAM.
In 2010 14th International Workshop on Computational Electronics, Urbana-Champaign, IL, USA. https://doi.org/10.1109/iwce.2010.5677934 (reposiTUm)

769.   Makarov, A., Sverdlov, V., Selberherr, S. (2010).
A Stochastic Model of Bipolar Resistive Switching in Metal-Oxide-Based Memory.
In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 396–399), Montreux, Austria. (reposiTUm)

768.   Stimpfl, F., Weinbub, J., Heinzl, R., Schwaha, P., Selberherr, S. (2010).
A Unified Topological Layer for Finite Element Space Discretization.
In AIP Conference Proceedings (pp. 1655–1658), Korfu, Griechenland. (reposiTUm)

767.   Sverdlov, V., Stanojevic, Z., Baumgartner, O., Selberherr, S. (2010).
Confinement-Enhanced Valley Splitting for Spin-Driven Silicon Devices.
In Proceedings of the 6th International Conference on the Physics and Application of Spin Related Phenomena in Semiconductors (PASPS-VI) (pp. 273–274), Tokyo. (reposiTUm)

766.   Ceric, H., Orio, R., Selberherr, S. (2010).
Electromigration Anisotropy and Mechanical Stress in Modern Copper Interconnect.
In Proceedings of the 17th International Symposium on the Physical, Failure Analysis of Integrated Circuits (pp. 167–170), Singapore. (reposiTUm)

765.   Sverdlov, V., Stanojevic, Z., Baumgartner, O., Selberherr, S. (2010).
Enhanced Valley Splitting in Silicon Nanowires and Point Contacts.
In Abstract Book of the Nanoelectronics Days 2010 (p. 118), Aachen. (reposiTUm)

764.   Makarov, A., Weinbub, J., Sverdlov, V., Selberherr, S. (2010).
First-Principles Modeling of Bipolar Resistive Switching in Metal-Oxide Based Memory.
In Proceedings of the European Simulation and Modelling Conference (ESM) (pp. 181–186), Malta. (reposiTUm)

763.   Vitanov, S., Palankovski, V., Selberherr, S. (2010).
Hydrodynamic Models for GaN-Based HEMTs.
In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (p. 4), Montreux, Austria. (reposiTUm)

762.   Ceric, H., de Orio, R., Selberherr, S. (2010).
Impact of Parameter Variability on Electromigration Lifetime Distribution.
In 2010 International Conference on Simulation of Semiconductor Processes and Devices, Bologna, Italy. https://doi.org/10.1109/sispad.2010.5604523 (reposiTUm)

761.   Sverdlov, V., Baumgartner, O., Selberherr, S. (2010).
Large Valley Splitting in Slightly Misaligned Uniaxially Strained Silicon Films.
In Bulletin American Physical Society (APS March Meeting 2010) (p. B9.00001), Los Angeles/USA, Austria. (reposiTUm)

760.   Pourfath, M., Sverdlov, V., Selberherr, S. (2010).
Modeling Demands for Nanoscale Devices.
In Proceedings of the Device Research Conference (DRC) (pp. 211–214), Santa Barbara , California, Austria. (reposiTUm)

759.   Sverdlov, V., Selberherr, S. (2010).
Modeling Floating Body Z-Ram Storage Cells.
In 2010 27th International Conference on Microelectronics Proceedings, Beograd. https://doi.org/10.1109/miel.2010.5490533 (reposiTUm)

758.   Sverdlov, V., Selberherr, S. (2010).
Modeling of Modern MOSFETs With Strain.
In Proceedings of the 1st International Workshop on Semiconductor Devices Modeling and Electronic (SDMEM2010) (pp. 1–11), La Plata, Buenos Aires, Argentina. (reposiTUm)

757.   Makarov, A., Sverdlov, V., Selberherr, S. (2010).
Modeling of Resistive Switching in RRAM Using Monte Carlo Simulations.
In Book of Abstracts (p. 141), Catania. (reposiTUm)

756.   Makarov, A., Sverdlov, V., Selberherr, S. (2010).
Modelling of the SET and RESET Process in Bipolar Resistive Oxide-Based Memory Using Monte Carlo Simulations.
In Abstracts of the International Conference on Numerical Methods and Applications (NM&A) (p. B-39), Borovets. (reposiTUm)

755.   Makarov, A., Sverdlov, V., Selberherr, S. (2010).
Monte Carlo Simulation of Bipolar Resistive Switching Memories.
In Proceedings of the Nanoelectronics Days 2010 (p. 22), Aachen. (reposiTUm)

754.   Nedjalkov, M., Schwaha, P., Baumgartner, O., Selberherr, S. (2010).
Particle Model of the Scattering-Induced Wigner Function Correction.
In Large-Scale Scientific Computing: 7th International Conference, LSSC 2009 (pp. 411–418), Sozopol, Bulgaria. https://doi.org/10.1007/978-3-642-12535-5_48 (reposiTUm)

753.   Poschalko, C., Selberherr, S. (2010).
Relation Between the PCB Near Field and the Common Mode Coupling From the PCB to Cables.
In Proceedings of the Asia-Pacific International Symposium on Electromagnetic Compatibility (EMC) (pp. 1102–1105), Beijing. (reposiTUm)

752.   Sverdlov, V., Selberherr, S. (2010).
Scalability of a Second Generation Z-Ram Cell: A Computational Study.
In Proceedings of the International Conference on Computational, Experimental Engineering and Sciences (ICCES) (pp. 232–247), Las Vegas. (reposiTUm)

751.   Sverdlov, V., Stanojevic, Z., Baumgartner, O., Selberherr, S. (2010).
Spin-Driven Silicon Devices Utilizing Enhanced Valley Splitting.
In Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS) (p. TH-06), Kona. (reposiTUm)

750.   Nedjalkov, M., Selberherr, S., Dimov, I. (2010).
Stochastic Algorithm for Solving the Wigner-Boltzmann Correction Equation.
In Abstracts of the International Conference on Numerical Methods and Applications (NM&A) (p. B-43), Borovets. (reposiTUm)

749.   Makarov, A., Sverdlov, V., Selberherr, S. (2010).
Stochastic Modeling of the Resistive Switching Mechanism in Oxide-Based Memory.
In Proceedings of the 17th International Symposium on the Physics, Failure Analysis of Integrated Circuits (pp. 309–312), Singapore. (reposiTUm)

748.   Makarov, A., Sverdlov, V., Selberherr, S. (2010).
Stochastic Modeling Hysteresis and Resistive Switching in Bipolar Oxide-Based Memory.
In 2010 International Conference on Simulation of Semiconductor Processes and Devices, Bologna, Italy. https://doi.org/10.1109/sispad.2010.5604517 (reposiTUm)

747.   Sverdlov, V., Selberherr, S. (2010).
Strain Engineering Techniques: A Rigorous Physical Review.
In Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS) (p. TH-05), Kona. (reposiTUm)

746.   Baumgartner, O., Sverdlov, V., Kosina, H., Selberherr, S. (2010).
Strain-Induced Valley Splitting in Slightly Misaligned Silicon Films.
In Conference Proceedings of the Sixth Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits (pp. 91–92), Granadea, Spanien, Austria. (reposiTUm)

745.   Cervenka, J., Kosina, H., Selberherr, S., Zhang, J., Hrauda, N., Stangl, J., Bauer, G., Vastola, G., Marzegalli, A., Miglio, L. (2010).
Strained MOSFETs on Ordered SiGe Dots.
In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 297–300), Montreux, Austria. (reposiTUm)

744.   Ertl, O., Filipovic, L., Selberherr, S. (2010).
Three-Dimensional Simulation of Focused Ion Beam Processing Using the Level Set Method.
In 2010 International Conference on Simulation of Semiconductor Processes and Devices, Bologna, Italy. https://doi.org/10.1109/sispad.2010.5604573 (reposiTUm)

743.   Pourfath, M., Sverdlov, V., Selberherr, S. (2010).
Transport Modeling for Nanoscale Semiconductor Devices.
In Proceedings of the International Conference on Solid-State and Integrated Circuit Technology (ICSICT) (pp. 1737–1740), Peking, Austria. (reposiTUm)

742.   Vasicek, M., Sverdlov, V., Cervenka, J., Grasser, T., Kosina, H., Selberherr, S. (2010).
Transport in Nanostructures: A Comparative Analysis Using Monte Carlo Simulation, the Spherical Harmonic Method, and Higher Moments Models.
In Large-Scale Scientific Computing: 7th International Conference, LSSC 2009 (pp. 443–450), Sozopol, Bulgaria. https://doi.org/10.1007/978-3-642-12535-5_52 (reposiTUm)

741.   Weinbub, J., Rupp, K., Selberherr, S. (2010).
ViennaIPD - An Input Control Language for Scientific Computing.
In Proceedings of the Industrial Simulation Conference (pp. 34–38), Budapest. (reposiTUm)

740.   Ertl, O., Selberherr, S. (2009).
A Fast Void Detection Algorithm for Three-Dimensional Deposition Simulation.
In 2009 International Conference on Simulation of Semiconductor Processes and Devices, San Diego, CA, United States. https://doi.org/10.1109/sispad.2009.5290221 (reposiTUm)

739.   Neophytou, N., Wagner, M., Kosina, H., Selberherr, S. (2009).
Analysis of Thermoelectric Properties of Scaled Silicon Nanostructures Using an Atomistic Thight-Binding Model.
In Book of Abstracts (p. 91), Freiburg. (reposiTUm)

738.   Pourfath, M., Selberherr, S. (2009).
Carbon-Based Electronics: A Computational Study.
In Proceedings of the International Workshop on the Physics of Semiconductor Devices (IWPSD) (p. 6), New Dehli. (reposiTUm)

737.   Schwaha, P., Baumgartner, O., Heinzl, R., Nedjalkov, M., Selberherr, S., Dimov, I. (2009).
Classical Approximation of the Scattering Induced Wigner Correction Equation.
In 2009 13th International Workshop on Computational Electronics, Urbana-Champaign, IL, USA. https://doi.org/10.1109/iwce.2009.5091092 (reposiTUm)

736.   Ceric, H., de Orio, R., Cervenka, J., Selberherr, S. (2009).
Copper Microstructure Impact on Evolution of Electromigration Induced Voids.
In 2009 International Conference on Simulation of Semiconductor Processes and Devices, San Diego, CA, United States. https://doi.org/10.1109/sispad.2009.5290222 (reposiTUm)

735.   Neophytou, N., Kosina, H., Selberherr, S., Klimeck, G. (2009).
Dependence of Injection Velocity and Capacitance of Si Nanowires on Diameter, Orientation, and Gate Bias: An Atomistic Tight-Binding Study.
In 2009 International Conference on Simulation of Semiconductor Processes and Devices, San Diego, CA, United States. https://doi.org/10.1109/sispad.2009.5290245 (reposiTUm)

734.   Orio, R., Ceric, H., Cervenka, J., Selberherr, S. (2009).
Electromigration Failure Development in Modern Dual-Damascene Interconnects.
In Proceedings of the International Conference on Very Large Scale Integration (VLSI-SoC) (p. 5), Florianopolis. (reposiTUm)

733.   Sverdlov, V., Windbacher, T., Baumgartner, O., Selberherr, S. (2009).
Electron Subband Structure and Valley Splitting in Silicon Ultra-Thin Body SOI Structures From the Two-Band k.p Model.
In EUROSOI 2009 Conference Proceedings (pp. 81–82), Granadea, Spanien, Austria. (reposiTUm)

732.   Sverdlov, V., Baumgartner, O., Windbacher, T., Schanovski, F., Selberherr, S. (2009).
Enhanced by Shear Strain Splitting of Unprimed Subbands in (001) Silicon Films and Point Contacts.
In Abstracts of the International Conference on Spintronics and Quantum Information Technology (SPINTECH) (p. 301), Cracow. (reposiTUm)

731.   Sverdlov, V., Baumgartner, O., Windbacher, T., Schanovsky, F., Selberherr, S. (2009).
Impact of Confinement and Stress on the Subband Parameters in Ultra-Thin Silicon Films.
In ECS Transactions (pp. 389–396), Ouro Preto. (reposiTUm)

730.   Sverdlov, V., Baumgartner, O., Windbacher, T., Schanovsky, F., Selberherr, S. (2009).
Impact of Confinement of Semiconductor and Band Engineering on Future Device Performance.
In 215th ECS Meeting (pp. 15–26), San Francisco. (reposiTUm)

729.   Pourfath, M., Selberherr, S. (2009).
Modeling Optical Sensors Based on Carbon Nanotubes.
In Proceedings of the International Symposium on Microwave and Optical Technology (ISMOT) (pp. 1381–1384), New Delhi. (reposiTUm)

728.   Sverdlov, V., Baumgartner, O., Windbacher, T., Selberherr, S. (2009).
Modeling Techniques for Strained CMOS Technology.
In 216th ECS Meeting (pp. 3–18), Vienna. (reposiTUm)

727.   Windbacher, T., Sverdlov, V., Selberherr, S. (2009).
Modeling of Low Concentrated Buffer DNA Detection With Suspend Gate Field-Effect Transistors (SGFET).
In 2009 13th International Workshop on Computational Electronics, Urbana-Champaign, IL, USA. https://doi.org/10.1109/iwce.2009.5091122 (reposiTUm)

726.   Nedjalkov, M., Schwaha, P., Baumgartner, O., Selberherr, S. (2009).
Particle Model of the Scattering-Induced Wigner Function Correction.
In Abstracts of the International Conference on Large-Scale Scientific Computations (LSSC) (p. 79), Sozopol, Bulgaria. (reposiTUm)

725.   Pourfath, M., Baumgartner, O., Kosina, H., Selberherr, S. (2009).
Performance Evaluation of Graphene Nanoribbon Infrared Photodetectors.
In Proceedings of the 9th International Conference on Numerical Simulation of Optoelectronic Devices (pp. 13–14), Singapore. (reposiTUm)

724.   Sverdlov, V., Baumgartner, O., Windbacher, T., Selberherr, S. (2009).
Perspectives of Silicon for Future Spintronic Applications From the Peculiarities of the Subband Structure in Ultra-Thin Films.
In Proceedings of 2009 Silicon Nanoelectronics Workshop (pp. 95–96), Kyoto. (reposiTUm)

723.   Sverdlov, V., Selberherr, S. (2009).
Scaling of Advanced Floating Body Z-Ram Storage Cells: A Modeling Approach.
In Proceedings of the International Conference on Very Large Scale Integration (VLSI-SoC) (p. 4), Florianopolis. (reposiTUm)

722.   Sverdlov, V., Baumgartner, O., Windbacher, T., Selberherr, S. (2009).
Silicon for Spintronic Applications: Strain-Enhanced Valley Splitting.
In Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Unmapped Roads (p. 58), Sardinia. (reposiTUm)

721.   Windbacher, T., Sverdlov, V., Selberherr, S., Heitzinger, C., Mauser, N., Ringhofer, C. (2009).
Study of the Properties of Biotin-Streptavidin Sensitive BioFETs.
In Proceedings of the International Conference on Biomedical Electronics and Devices (BIODEVICES) (pp. 24–30), Porto. (reposiTUm)

720.   Windbacher, T., Sverdlov, V., Selberherr, S., Heitzinger, C., Mauser, N., Ringhofer, C. (2009).
Study of the Properties of Biotin-Streptavidin Sensitive Biofets.
In Final Program and Book of Abstracts (p. 42), Porto. (reposiTUm)

719.   Sverdlov, V., Baumgartner, O., Selberherr, S. (2009).
Subband Parameters in Strained (110) Silicon Films From the Hensel-Hasegawa-Nakayama Model of the Conduction Band.
In Proceedings of the International Semiconductor Device Research Symposium (ISDRS) (pp. TP6-03.1–2), College Park, MD, USA. (reposiTUm)

718.   Sverdlov, V., Baumgartner, O., Tyaginov, S., Windbacher, T., Selberherr, S. (2009).
Subband Structure in Ultra-Thin Silicon Films.
In Proceedings of the International Symposium NANOSTRUCTURES: Physics and Technology (pp. 62–63), Minsk. (reposiTUm)

717.   de Orio, R., Ceric, H., Cervenka, J., Selberherr, S. (2009).
The Effect of Copper Grain Size Statistics on the Electromigration Lifetime Distribution.
In 2009 International Conference on Simulation of Semiconductor Processes and Devices, San Diego, CA, United States. https://doi.org/10.1109/sispad.2009.5290219 (reposiTUm)

716.   Ceric, H., Orio, R., Cervenka, J., Selberherr, S. (2009).
The Effect of Microstructure on Electromigration Induced Voids.
In Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) (pp. 694–697), Singapore. (reposiTUm)

715.   Orio, R., Ceric, H., Cervenka, J., Selberherr, S. (2009).
The Effect of Microstructure on Electromigration-Induced Failure Development.
In ECS Transactions (pp. 345–352), Ouro Preto. (reposiTUm)

714.   Orio, R., Ceric, H., Cervenka, J., Selberherr, S. (2009).
The Effect of Microstructure on the Electromigration Lifetime Distribution.
In Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA2009) (pp. 731–734), Singapore. (reposiTUm)

713.   Sverdlov, V., Baumgartner, O., Kosina, H., Selberherr, S., Schanovsky, F., Esseni, D. (2009).
The Linear Combination of Bulk Bands-Method for Electron and Hole Subband Calculations in Strained Silicon Films and Surface Layers.
In 2009 13th International Workshop on Computational Electronics, Urbana-Champaign, IL, USA. https://doi.org/10.1109/iwce.2009.5091158 (reposiTUm)

712.   Pourfath, M., Kosina, H., Selberherr, S. (2009).
Theoretical Study of Graphene Nanoribbon Photo-Detectors.
In Abstracts International Symposium on Advanced Nanostructures and Nano-Devices (ISANN) (pp. 178–179), Kaanapali. (reposiTUm)

711.   Sverdlov, V., Baumgartner, O., Windbacher, T., Schanovsky, F., Selberherr, S. (2009).
Thickness Dependence of the Effective Masses in a Strained Thin Silicon Film.
In 2009 International Conference on Simulation of Semiconductor Processes and Devices, San Diego, CA, United States. https://doi.org/10.1109/sispad.2009.5290252 (reposiTUm)

710.   Ertl, O., Selberherr, S. (2009).
Three-Dimensional Plasma Etching Simulation Using Advanced Ray Tracing and Level Set Techniques.
In ECS Transactions (pp. 61–68), Ouro Preto. (reposiTUm)

709.   Sverdlov, V., Vasicek, M., Cervenka, J., Grasser, T., Kosina, H., Selberherr, S. (2009).
Transport in Nanostructures: A Comparative Analysis Using Monte Carlo Simulation, the Spherical Harmonic Method, and Higher Moments Models.
In Abstracts of the International Conference on Large-Scale Scientific Computations (LSSC) (p. 93), Sozopol, Bulgaria. (reposiTUm)

708.   Sverdlov, V., Windbacher, T., Baumgartner, O., Schanovsky, F., Selberherr, S. (2009).
Valley Splitting in Thin Silicon Films From a Two-Band K·p Model.
In Proceedings of the 10th International Conference on Ultimate Integration of Silicon (pp. 277–280), Bologna, Austria. (reposiTUm)

707.   Stimpfl, F., Heinzl, R., Schwaha, P., Selberherr, S. (2008).
A Delaunay Mesh Generation Approach Without the Use of Convex Hulls.
In Proceedings Intl. Conf.on Numerical Geometry, Grid Generation and Scientific Computing (p. 2), Moscow, Russia. (reposiTUm)

706.   Windbacher, T., Sverdlov, V., Selberherr, S., Heitzinger, C. (2008).
A General Bottom-Up Modeling Approach for BioFETs.
In Abstracts Conf.on Nanosensors for Industrial Applications (NANOSENS), Vienna, Austria. (reposiTUm)

705.   Yazdanpanah Goharrizi, A., Pourfath, M., Fathipour, M., Kosina, H., Selberherr, S. (2008).
A Numerical Study of Graphene Nano-Ribbon Based Resonant Tunneling Diodes.
In International Symposium on Graphene Devices: Technology, Physics, and Modeling (pp. 66–67), Japan. (reposiTUm)

704.   Schwaha, P., Stimpfl, F., Heinzl, R., Selberherr, S. (2008).
A Parallel Delaunay and Advancing Front Mesh Generation Approach.
In Proceedings Intl. Conf.on Numerical Geometry, Grid Generation and Scientific Computing (p. 2), Moscow, Russia. (reposiTUm)

703.   Heinzl, R., Schwaha, P., Stimpfl, F., Selberherr, S. (2008).
A Parallel Generic Scientific Simulation Environment.
In Proceedings Intl. Workshop on State-of-the-Art in Scientific and Parallel Computing, Umea. (reposiTUm)

702.  F. Stimpfl, R. Heinzl, P. Schwaha, S. Selberherr:
"A Robust Parallel Delaunay Mesh Generation Approach Suitable for Three-Dimensional TCAD";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7; 265 - 268. https://doi.org/10.1109/SISPAD.2008.4648288

701.   Pourfath, M., Selberherr, S. (2008).
Analysis of Carbon Nanotube Photo-Detectors.
In Abstracts Advanced Heterostructures and Nanostructures Workshop (AHNW) (p. TU-06), Kona. (reposiTUm)

700.   Orio, R., Carniello, S., Ceric, H., Selberherr, S. (2008).
Analysis of Electromigration in Dual-Damascene Interconnect Structures.
In ECS Transactions (pp. 337–348), Ouro Preto. (reposiTUm)

699.  R. Orio, H. Ceric, S. Carniello, S. Selberherr:
"Analysis of Electromigration in Redundant Vias";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7; 237 - 240. https://doi.org/10.1109/SISPAD.2008.4648281

698.   Cervenka, J., Selberherr, S. (2008).
Analysis of Microstructure Impact on Electromigration.
In 2008 International Conference on Simulation of Semiconductor Processes and Devices, Kanagawa, Japan. https://doi.org/10.1109/sispad.2008.4648282 (reposiTUm)

697.   Poschalko, C., Selberherr, S. (2008).
Calculation of the Radiation From the Slot of a Slim Enclosure With a Cavity Resonator Model.
In 19th International Zurich Symposium on Electromagnetic Compatibility, (pp. 634–637), Singapore. (reposiTUm)

696.   Sverdlov, V., Kosina, H., Selberherr, S. (2008).
Comparative Analysis of Pseudo-Potential and Tight-Binding Band Structure Calculations With an Analytical Two-Band K·p Model: Conduction Band of Silicon.
In Micro- and Nanoelectronics 2007 (pp. 70251I-1–70251I-8), Athen, Greece. https://doi.org/10.1117/12.802503 (reposiTUm)

695.   Ceric, H., Lacerda de Orio, R., Selberherr, S. (2008).
Comprehensive Modeling of Electromigration Induced Interconnect Degradation Mechanisms.
In 2008 26th International Conference on Microelectronics, Beograd. https://doi.org/10.1109/icmel.2008.4559225 (reposiTUm)

694.  O. Baumgartner, P. Schwaha, M. Karner, M. Nedjalkov, S. Selberherr:
"Coupling of Non-Equilibrium Green's Function and Wigner Function Approaches";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7; 345 - 348. https://doi.org/10.1109/SISPAD.2008.4648308

693.   Pourfath, M., Kosina, H., Selberherr, S. (2008).
Current Transport in Carbon Nanotube Transistors.
In The 9th Internationl Conference on Solid-State and Integrated-Circuit Technology (pp. 361–364), Peking, Austria. (reposiTUm)

692.   Poschalko, C., Selberherr, S. (2008).
Domain Separation With Port Interfaces for Calculation of Emissions From Enclosure Slots.
In 2008 IEEE International Symposium on Electromagnetic Compatibility, Detroit. https://doi.org/10.1109/isemc.2008.4652083 (reposiTUm)

691.   Sverdlov, V., Kosina, H., Selberherr, S. (2008).
Electron Subband Structure and Controlled Valley Splitting in Silicon Thin-Body SOI FETs: Two-Band k.p Theory and Beyond.
In Proceedings of the 4th Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits (pp. 41–42), Granada, Austria. (reposiTUm)

690.   Stimpfl, F., Heinzl, R., Schwaha, P., Selberherr, S. (2008).
High Performance Parallel Mesh Generation and Adaption.
In Proceedings Intl. Workshop on State-of-the-Art in Scientific and Parallel Computing, Umea. (reposiTUm)

689.   Sverdlov, V., Selberherr, S. (2008).
Mobility Modeling in Advanced MOSFETs With Ultra-Thin Silicon Body Under Stress.
In ECS Transactions (pp. 159–168), Ouro Preto. (reposiTUm)

688.   Windbacher, T., Selberherr, S. (2008).
Mobility Enhancement in Thin Silicon Films: Strain and Thickness Dependences of the Effective Masses and Non-Parabolicity Parameter.
In 2008 International Conference on Simulation of Semiconductor Processes and Devices, Kanagawa, Japan. https://doi.org/10.1109/sispad.2008.4648258 (reposiTUm)

687.   Pourfath, M., Selberherr, S. (2008).
Modeling Current Transport in Carbon Nanotube Transistors.
In IEEE International Conference on Electron Devices and Solid-State Circuit 2008 (p. 6), Hong Kong, Austria. (reposiTUm)

686.   Sverdlov, V., Selberherr, S. (2008).
Modeling and Simulation of Advanced Floating Body Z-Ram Memory Cells.
In Proceedings European Simulation and Modeling Conference (ESM) (pp. 380–384), Porto, Austria. (reposiTUm)

685.   Heinzl, R., Schwaha, P., Stimpfl, F., Selberherr, S. (2008).
Parallel Library-Centric Application Design by a Generic Scientific Simulation Environment.
In 7th Workshop on Parallel/High-Performance Object-Oriented Scientific Computing (POOSC'08) (p. 5), Nantes. (reposiTUm)

684.   Poschalko, C., Selberherr, S. (2008).
Radiated Emission From the Slot of a Slim Cubical Enclosure With Multiple Sources Inside.
In Proceedings of the 8th International Symposium on Electromagnetic Compatibility (pp. 109–114), Detroit. (reposiTUm)

683.   Pourfath, M., Kosina, H., Selberherr, S. (2008).
Reduction of the Dark-Current in Carbon Nanotube Photo-Detectors.
In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 214–217), Montreux, Austria. (reposiTUm)

682.   Windbacher, T., Sverdlov, V., Selberherr, S., Heitzinger, C., Mauser, N., Ringhofer, C. (2008).
Simulation of Field-Effect Biosensors (BioFETs) for Biotin-Streptavidin Complexes.
In PHYSICS OF SEMICONDUCTORS: 29th International Conference on the Physics of Semiconductors (pp. 507–508), Wien, Österreich, Austria. (reposiTUm)

681.   Windbacher, T., Sverdlov, V., Selberherr, S., Heitzinger, C., Mauser, N., Ringhofer, C. (2008).
Simulation of Field-Effect Biosensors (BioFETs).
In 2008 International Conference on Simulation of Semiconductor Processes and Devices, Kanagawa, Japan. https://doi.org/10.1109/sispad.2008.4648270 (reposiTUm)

680.   Sverdlov, V., Selberherr, S. (2008).
Strain-Controlled Valley Splitting in Si-SiGe Heterostructures.
In Abstract Book (pp. 20–21), Princeton. (reposiTUm)

679.   Ceric, H., Orio, R., Cervenka, J., Selberherr, S. (2008).
Stress-Induced Anisotropy of Electromigration in Copper Interconnects.
In Proceedings of the Stress-Induced Phenomena in Metallization: 10th International Workshop (pp. 56–62), Dresden. (reposiTUm)

678.   Sverdlov, V., Windbacher, T., Kosina, H., Selberherr, S. (2008).
Stress-Induced Valley Splitting in Silicon Thin Films.
In Proceedings of the 9th International Conference on Ultimate Integration on Silicon (pp. 93–96), Bologna, Austria. (reposiTUm)

677.   Schwaha, P., Heinzl, R., Stimpfl, F., Selberherr, S. (2008).
Synergies in Scientific Computing by Combining Multi-Paradigmatic Languages.
In Proceedings Intl. Workshop on State-of-the-Art in Scientific and Parallel Computing, Umea. (reposiTUm)

676.   Schwaha, P., Heinzl, R., Stimpfl, F., Selberherr, S. (2008).
Synergies in Scientific Computing by Combining Multi-Paradigmatic Languages for High-Performance Applications.
In 7th Workshop on Parallel/High-Performance Object-Oriented Scientific Computing (POOSC'08) (p. 6), Nantes. (reposiTUm)

675.   Ceric, H., Orio, R., Cervenka, J., Selberherr, S. (2008).
TCAD Solutions for Submicron Copper Interconnect.
In Proceedings 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits (pp. 78–81), Singapore. (reposiTUm)

674.   Ertl, O., Selberherr, S. (2008).
Three-Dimensional Topography Simulation Using Advanced Level Set and Ray Tracing Methods.
In 2008 International Conference on Simulation of Semiconductor Processes and Devices, Kanagawa, Japan. https://doi.org/10.1109/sispad.2008.4648303 (reposiTUm)

673.   Okhonin, S., Nagoga, M., Lee, C., Colinge, J., Afzalian, A., Yan, R., Akhavan, N., Xiong, W., Sverdlov, V., Selberherr, S., Mazure, C. (2008).
Ultra-Scaled Z-Ram Cell.
In 2008 IEEE International SOI Conference Proceedings (pp. 157–158), New Paltz. (reposiTUm)

672.   Schwaha, P., Heinzl, R., Mach, G., Pogoreutz, C., Fister, S., Selberherr, S. (2007).
A High Performance Webapplication for an Electro-Biological Problem.
In ECMS 2007 Proceedings edited by: I. Zelinka, Z. Oplatkova, A. Orsoni, Prag. https://doi.org/10.7148/2007-0218 (reposiTUm)

671.   Stimpfl, F., Heinzl, R., Schwaha, P., Selberherr, S. (2007).
A Multi-Mode Mesh Generation Approach for Scientific Computing.
In Proceedings European Simulation and Modeling Conference (pp. 506–513), Malta. (reposiTUm)

670.   Heinzl, R., Mach, G., Schwaha, P., Selberherr, S. (2007).
A Performance Test Platform.
In Proceedings European Simulation and Modeling Conference (pp. 483–487), Malta. (reposiTUm)

669.   Pourfath, M., Kosina, H., Selberherr, S. (2007).
Carbon Nanotube Based Transistors: A Computational Study.
In AIP Conference Proceedings. https://doi.org/10.1063/1.2730253 (reposiTUm)

668.   Sverdlov, V., Kosina, H., Selberherr, S. (2007).
Comparative Analysis of Pseudo-Potential and Tight-Binding Band Structure Calculations With an Analytical Two-Band K·p Model: Conduction Band of Silicon.
In International Conference "Micro and Nanoelectronics - 2007" Book of Abstracts, Moscow-Zvenigorod. (reposiTUm)

667.   Sverdlov, V., Kosina, H., Selberherr, S. (2007).
Conduction Band in Silicon: Numerical Versus Analytical Two-Band K·p Model.
In 8th Conference of the Society for Electronics, Telecommunications, Automatics, and Informatics (p. 4), Ohrid, Macedonia. (reposiTUm)

666.   Orio, R., Ceric, H., Selberherr, S. (2007).
Effect of Strains on Anisotropic Material Transport in Copper Interconnect Structures Under Electromigration Stress.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 62–63), Urbana-Champaign, IL, USA. (reposiTUm)

665.   Sverdlov, V., Ungersböck, S., Kosina, H., Selberherr, S. (2007).
Effects of Shear Strain on the Conduction Band in Silicon: An Efficient Two-Band k.p Theory.
In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 386–389), Montreux, Austria. (reposiTUm)

664.   Ertl, O., Heitzinger, C., Selberherr, S. (2007).
Efficient Coupling of Monte Carlo and Level Set Methods for Topography Simulation.
In Simulation of Semiconductor Processes and Devices 2007 (pp. 417–420), Vienna, Austria. https://doi.org/10.1007/978-3-211-72861-1_101 (reposiTUm)

663.   Schwaha, P., Heinzl, R., Mach, G., Pogoreutz, C., Fister, S., Selberherr, S. (2007).
Electro-Biological Simulation Using a Web Front-End.
In Proceedings European Simulation and Modeling Conference (pp. 493–495), Malta. (reposiTUm)

662.   Ceric, H., Selberherr, S. (2007).
Electromigration Modeling for Interconnect Structures in Microelectronics.
In ECS Transactions (pp. 295–304), Ouro Preto. (reposiTUm)

661.   Ceric, H., Selberherr, S. (2007).
Electromigration in Interconnect Structures of Microelectronic Circuits.
In Microelectronics, Electronics, and Electronic Technologies (MEET) (pp. 23–28), Opatija. (reposiTUm)

660.   Vitanov, S., Palankovski, V., Murad, S., Rödle, T., Quay, R., Selberherr, S. (2007).
Hydrodynamic Modeling of AlGaN/GaN HEMTs.
In Simulation of Semiconductor Processes and Devices 2007 (pp. 273–276), Vienna, Austria. https://doi.org/10.1007/978-3-211-72861-1_65 (reposiTUm)

659.   Ceric, H., Nentchev, A., Langer, E., Selberherr, S. (2007).
Intrinsic Stress Build-Up During Volmer-Weber Crystal Growth.
In Simulation of Semiconductor Processes and Devices 2007 (pp. 37–40), Vienna, Austria. https://doi.org/10.1007/978-3-211-72861-1_9 (reposiTUm)

658.   Hollauer, C., Ceric, H., van Barel, G., Witvrouw, A., Selberherr, S. (2007).
Investigation of Intrinsic Stress Effects in Cantilever Structures.
In Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems (CD ROM) (p. 4), Bangkok, Thailand. (reposiTUm)

657.   Heitzinger, C., Ringhofer, C., Selberherr, S. (2007).
Investigations of the Potential Jump at the Surface of BioFETs Using a Multi-Scale Model.
In 211th ECS Meeting, Chicago. (reposiTUm)

656.   Heinzl, R., Mach, G., Schwaha, P., Selberherr, S. (2007).
Labtool - A Managing Software for Computer Courses.
In Proceedings European Simulation and Modeling Conference (pp. 488–492), Malta. (reposiTUm)

655.   Ungersboeck, E., Sverdlov, V., Kosina, H., Selberherr, S. (2007).
Low-Field Mobility in Strained Silicon Inversion Layers and UTB MOSFETs for Different Substrate Orientations.
In AIP Conference Proceedings. https://doi.org/10.1063/1.2730422 (reposiTUm)

654.   Heinzl, R., Schwaha, P., Giani, C., Selberherr, S. (2007).
Modeling of Non-Trivial Data-Structures With a Generic Scientific Simulation Environment.
In Proceedings of the 4th High-End Visualization Workshop (pp. 5–13), Obergurgl, Austria. (reposiTUm)

653.   Ceric, H., Langer, E., Selberherr, S. (2007).
Modeling of Residual Stresses in Thin Metal Films.
In 9th International Workshop on Stress-Induced Phenomena in Metallization (p. 18), Dresden. (reposiTUm)

652.   Heinzl, R., Schwaha, P., Selberherr, S. (2007).
Modern Concepts for High-Perfomance Scientific Computing - Library Centric Application Design.
In Proceedings of the 2nd ICSOFT 2007 (pp. 100–107), Barcelona. (reposiTUm)

651.   Nentchev, A., Selberherr, S. (2007).
On the Magnetic Field Extraction for On-Chip Inductance Calculation.
In Simulation of Semiconductor Processes and Devices 2007 (pp. 349–352), Vienna, Austria. https://doi.org/10.1007/978-3-211-72861-1_84 (reposiTUm)

650.   Vitanov, S., Palankovski, V., Murad, S., Rödle, T., Quay, R., Selberherr, S. (2007).
Predictive Simulation of AlGaN/GaN HEMTs.
In 2007 IEEE Compound Semiconductor Integrated Circuits Symposium, San Antonio. https://doi.org/10.1109/csics07.2007.31 (reposiTUm)

649.   Sverdlov, V., Kosina, H., Grasser, T., Selberherr, S. (2007).
Self-Consistent Wigner Monte Carlo Simulations of Current in Emerging Nanodevices: Role of Tunneling and Scattering.
In AIP Conference Proceedings. https://doi.org/10.1063/1.2730425 (reposiTUm)

648.   Schwaha, P., Schwaha, M., Heinzl, R., Ungersböck, S., Selberherr, S. (2007).
Simulation Methodologies for Scientific Computing - Modern Application Design.
In Proceedings of the 2nd ICSOFT 2007 (pp. 270–276), Barcelona. (reposiTUm)

647.   Orio, R., Ceric, H., Selberherr, S. (2007).
Strain-Induced Anisotropy of Electromigration in Copper Interconnect.
In 2007 International Semiconductor Device Research Symposium (p. 2), College Park, MD, USA. (reposiTUm)

646.   Pourfath, M., Kosina, H., Selberherr, S. (2007).
The Effect of Inelastic Phonon Scattering on Carbon Nanotube-Based Transistor Performance.
In International Symposium on Advanced Nanodevices and Nanotechnology (pp. 37–38), Waikoloa, Hawaii. (reposiTUm)

645.   Pourfath, M., Kosina, H., Selberherr, S. (2007).
The Role of Inelastic Electron-Phonon Interaction on the On-Current and Gate Delay Time of CNT-FETs.
In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 239–242), Montreux, Austria. (reposiTUm)

644.   Cervenka, J., Ceric, H., Ertl, O., Selberherr, S. (2007).
Three-Dimensional Sacrificial Etching.
In Simulation of Semiconductor Processes and Devices 2007 (pp. 433–436), Vienna, Austria. https://doi.org/10.1007/978-3-211-72861-1_105 (reposiTUm)

643.   Cervenka, J., Ceric, H., Selberherr, S. (2007).
Three-Dimensional Simulation of Sacrificial Etching.
In Smart Sensors, Actuators, and MEMS III (pp. 452–460), Gran Canaria, Spain. https://doi.org/10.1117/12.721979 (reposiTUm)

642.   Ceric, H., Langer, E., Selberherr, S. (2007).
Three-Phase Model for the Volmer-Weber Crystal Growth.
In Nanostructures and Carrier Interactions (p. 127), Atsugi, Japan. (reposiTUm)

641.   Nentchev, A., Selberherr, S. (2007).
Three-Dimensional On-Chip Inductance and Resistance Extraction.
In Proceedings of the 20th annual conference on Integrated circuits and systems design - SBCCI '07, Rio de Janeiro. https://doi.org/10.1145/1284480.1284540 (reposiTUm)

640.   Sverdlov, V., Karlowatz, G., Kosina, H., Selberherr, S. (2007).
Two-Band k.p Model for the Conduction Band in Silicon.
In Proceedings European Simulation and Modeling Conference (pp. 220–224), Malta. (reposiTUm)

639.   Sverdlov, V., Karlowatz, G., Dhar, S., Kosina, H., Selberherr, S. (2007).
Two-Band K·p Model for the Conduction Band in Silicon: Impact of Strain and Confinement on Band Structure and Mobility.
In 2007 International Semiconductor Device Research Symposium (p. 2), College Park, MD, USA. (reposiTUm)

638.   Schwaha, P., Giani, C., Heinzl, R., Selberherr, S. (2007).
Visualization of Polynomials Used in Series Expansions.
In Proceedings of the 4th High-End Visualization Workshop (pp. 139–148), Obergurgl, Austria. (reposiTUm)

637.   Pourfath, M., Kosina, H., Selberherr, S. (2006).
A Comprehensive Study of Carbon Nanotube Based Transistors: The Effects of Geometrical, Interface Barrier, and Scattering Parameters.
In 2006 International Electron Devices Meeting, San Francisco, CA, USA. https://doi.org/10.1109/iedm.2006.346739 (reposiTUm)

636.   Movahhedi, M., Nentchev, A., Ceric, H., Abdipour, A., Selberherr, S. (2006).
A Finite Element Time-Domain Algorithm Based on the Alternating-Direction Implicit Method.
In European Microwave Week 2006 Book of Abstracts (pp. 1–4), Manchester. (reposiTUm)

635.   Riedling, K., Selberherr, S. (2006).
A Flexible Web-Based Publication Database.
In Proceedings Volume 1 of the 4th International Conference on Education and Information Systems: Technologies and Applications (EISTA 2006) (pp. 262–267), Orlando, Florida, USA. (reposiTUm)

634.   Spevak, M., Heinzl, R., Schwaha, P., Grasser, T., Selberherr, S. (2006).
A Generic Discretization Library.
In OOPSLA Proceedings (pp. 95–100), Portland. (reposiTUm)

633.   Heinzl, R., Spevak, M., Schwaha, P., Selberherr, S. (2006).
A Generic Topology Library.
In OOPSLA Proceedings (pp. 85–93), Portland. (reposiTUm)

632.   Holzer, S., Wagner, M., Friembichler, L., Langer, E., Grasser, T., Selberherr, S. (2006).
A Multi-Purpose Optimization Framework for TCAD Applications.
In ICCAM 2006 Abstracts of Talks (p. 76), Leuven. (reposiTUm)

631.   Wittmann, R., Uppal, S., Hössinger, A., Cervenka, J., Selberherr, S. (2006).
A Study of Boron Implantation Into High Ge Content SiGe Alloys.
In 210th ECS Meeting (p. 1), Cancun. (reposiTUm)

630.   Dhar, S., Kosina, H., Karlowatz, G., Ungersböck, S., Grasser, T., Selberherr, S. (2006).
A Tensorial High-Field Electron Mobility Model for Strained Silicon.
In 2006 International SiGe Technology and Device Meeting Conference Digest (pp. 72–73), Princeton. (reposiTUm)

629.   Riedling, K., Selberherr, S. (2006).
A Web-Based Publication Database for Performance Evaluation and Research Documentation.
In Proceedings of the ICEE 2006 (pp. R2F-5–R2F-10), San Juan, Puerto Rico. (reposiTUm)

628.   Holzer, S., Wagner, M., Sheikholeslami, A., Karner, M., Span, G., Grasser, T., Selberherr, S. (2006).
An Extendable Multi-Purpose Simulation and Optimization Framework for Thermal Problems in TCAD Applications.
In Collection of Papers Presented at the 12th International Workshop on Thermal Investigation of ICs and Systems (pp. 239–244), Nice. (reposiTUm)

627.   Karlowatz, G., Ungersböck, S., Wessner, W., Kosina, H., Selberherr, S. (2006).
Analysis of Hole Transport in Arbitrarily Strained Germanium.
In 210th ECS Meeting (p. 1), Cancun. (reposiTUm)

626.   Dhar, S., Ungersboeck, E., Kosina, H., Grasser, T., Selberherr, S. (2006).
Analytical Modeling of Electron Mobility in Strained Germanium.
In 2006 International Conference on Simulation of Semiconductor Processes and Devices, Monterey, California, United States. https://doi.org/10.1109/sispad.2006.282833 (reposiTUm)

625.   Sheikholeslami, A., Heinzl, R., Holzer, S., Heitzinger, C., Spevak, M., Leicht, M., Häberlen, O., Fugger, J., Badrieh, F., Parhami, F., Puchner, H., Grasser, T., Selberherr, S. (2006).
Applications of Two- And Three-Dimensional General Topography Simulator in Semiconductor Manufacturing Processes.
In Proceedings of the 14th Iranian Conference on Electrical Engineering ICEE 2006 (p. 4), Tehran. (reposiTUm)

624.   Sverdlov, V., Ungersböck, S., Kosina, H., Selberherr, S. (2006).
Comparative Study of Low-Field Mobilities in Double- And Single-Gate Ultra-Thin Body SOI for Different Substrate Orientations.
In Abstracts IEEE 2006 Silicon Nanoelectronics Workshop (pp. 17–18), Honolulu. (reposiTUm)

623.   Sverdlov, V., Kosina, H., Selberherr, S. (2006).
Current Flow in Upcoming Microelectronic Devices.
In Proceedings International Caribbean Conference on Devices, Circuits and Systems (pp. 3–8), Playa del Carmen. (reposiTUm)

622.   Sverdlov, V., Kosina, H., Selberherr, S. (2006).
Current Transport in Nanoelectronic Semiconductor Devices.
In Proceedings IEEE Conference on Emerging Technologies - Nanoelectronics (pp. 490–495), Singapore. (reposiTUm)

621.  M. Pourfath, H. Kosina, S. Selberherr:
"Dissipative Transport in CNTFETs";
Talk: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 2006-05-25 - 2006-05-27; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1; 345 - 346.

620.   Ungersboeck, E., Sverdlov, V., Kosina, H., Selberherr, S. (2006).
Electron Inversion Layer Mobility Enhancement by Uniaxial Stress on (001) and (110) Oriented MOSFETs.
In 2006 International Conference on Simulation of Semiconductor Processes and Devices, Monterey, California, United States. https://doi.org/10.1109/sispad.2006.282834 (reposiTUm)

619.   Dhar, S., Ungersböck, S., Kosina, H., Grasser, T., Selberherr, S. (2006).
Electron Mobility Model for #Lt110> Stressed Si Including Strain-Dependent Mass.
In Abstracts IEEE 2006 Silicon Nanoelectronics Workshop (pp. 153–154), Honolulu. (reposiTUm)

618.   Nentchev, A., Cervenka, J., Marnaus, G., Enichlmair, H., Selberherr, S. (2006).
Heatring - Smart Investigation of Temperature Impact on Integrated Circuit Devices.
In Collection of Papers Presented at the 12th International Workshop on Thermal Investigation of ICs and Systems (pp. 235–238), Nice. (reposiTUm)

617.   Palankovski, V., Marchlewski, A., Ungersböck, S., Selberherr, S. (2006).
Identification of Transport Parameters for Gallium Nitride Based Semiconductor Devices.
In 5th Mathmod Vienna Proceedings (pp. 14-1–14-9), Wien, Austria. (reposiTUm)

616.   Wittmann, R., Puchner, H., Ceric, H., Selberherr, S. (2006).
Impact of Random Bit Values on NBTI Lifetime of an SRAM Cell.
In Proceedings 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) (pp. 41–44), Singapore. (reposiTUm)

615.   Ungersböck, S., Sverdlov, V., Kosina, H., Selberherr, S. (2006).
Low-Field Electron Mobility in Stressed UTB SOI MOSFETs for Different Substrate Orientations.
In 210th ECS Meeting (p. 1), Cancun. (reposiTUm)

614.   Ungersböck, S., Sverdlov, V., Kosina, H., Selberherr, S. (2006).
Modeling of Advanced Semiconductor Devices.
In ECS Transactions (pp. 207–216), Ouro Preto. (reposiTUm)

613.   Hollauer, C., Ceric, H., Selberherr, S. (2006).
Modeling of Intrinsic Stress Effects in Deposited Thin Films.
In Eurosensors 20th Anniversary Vol. 1 (pp. 324–325), Göteborg, Sweden. (reposiTUm)

612.   Grasser, T., Selberherr, S. (2006).
Modeling of Negative Bias Temperature Instability.
In Abstracts 7th Symposium Diagnostics, Yield: Advanced Silicon Devices and Technologies for ULSI ERA (pp. 1–2), Warszawa. (reposiTUm)

611.   Wittmann, R., Hössinger, A., Cervenka, J., Uppal, S., Selberherr, S. (2006).
Monte Carlo Simulation of Boron Implantation Into (100) Germanium.
In 2006 International Conference on Simulation of Semiconductor Processes and Devices, Monterey, California, United States. https://doi.org/10.1109/sispad.2006.282914 (reposiTUm)

610.   Ceric, H., Cervenka, J., Langer, E., Selberherr, S. (2006).
Moving Boundary Applications in Process and Interconnect TCAD.
In Proceedings Mini-Workshop on Anisotropic Motion Laws (pp. 13–16), Oberwolfach. (reposiTUm)

609.   Karner, M., Holzer, S., Vasicek, M., Gös, W., Wagner, M., Kosina, H., Selberherr, S. (2006).
Numerical Analysis of Gate Stacks.
In 210th ECS Meeting (p. 1), Cancun. (reposiTUm)

608.   Pourfath, M., Kosina, H., Selberherr, S. (2006).
On the Effect of Scattering on the Performance of Carbon Nanotube Field-Effect Transistors.
In Proceedings of the 14th Iranian Conference on Electrical Engineering ICEE 2006 (p. 5), Tehran. (reposiTUm)

607.   Pourfath, M., Kosina, H., Selberherr, S. (2006).
Optimal Design for Carbon Nanotube Transistors.
In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 210–213), Montreux, Austria. (reposiTUm)

606.  S. Holzer, S. Selberherr:
"Optimization Issue in Interconnect Analysis";
Talk: International Conference on Microelectronics (MIEL), Beograd (invited); 2006-05-14 - 2006-05-17; in: "Proceedings of the International Conference on Microelectronics (MIEL)", (2006), ISBN: 1-4244-0116-x; 465 - 470. https://doi.org/10.1109/ICMEL.2006.1650994

605.   Pourfath, M., Kosina, H., Selberherr, S. (2006).
Optimizing the Performance of Carbon Nanotube Transistors.
In 2006 Sixth IEEE Conference on Nanotechnology, Nagoya, Austria. https://doi.org/10.1109/nano.2006.247702 (reposiTUm)

604.   Sverdlov, V., Ungersböck, S., Kosina, H., Selberherr, S. (2006).
Orientation Dependence of the Low Field Mobility in Double- And Single-Gate SOI FETs.
In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 178–181), Montreux, Austria. (reposiTUm)

603.   Heinzl, R., Spevak, M., Schwaha, P., Grasser, T., Selberherr, S. (2006).
Performance Analysis for High-Precision Interconnect Simulation.
In The 2006 European Simulation and Modelling Conference (pp. 113–116), Porto, Austria. (reposiTUm)

602.   Dhar, S., Karlowatz, G., Kosina, H., Selberherr, S. (2006).
Physical Modeling of Electron Mobility Enhancement for Arbitrarily Strained Silicon.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 141–142), Urbana-Champaign, IL, USA. (reposiTUm)

601.   Sheikholeslami, A., Selberherr, S., Parhami, F., Puchner, H. (2006).
Planarization of Passivation Layers During Manufacturing Processes of Image Sensors.
In Proceedings of the 6th International Conference on Numerical Simulation of Optoelectronic Devices (pp. 35–36), Singapore. (reposiTUm)

600.   Sheikholeslami, A., Parhami, F., Puchner, H., Selberherr, S. (2006).
Planarization of Silicon Dioxide and Silicon Nitride Passivation Layers.
In International Conference on Nanoscience and Technology (ICNT 2006) (pp. 163–164), Basel. (reposiTUm)

599.   Sverdlov, V., Kosina, H., Ringhofer, C., Nedjalkov, M., Selberherr, S. (2006).
Quantum Correction to the Semiclassical Electron-Phonon Scattering Operator.
In Large-Scale Scientific Computing: 5th International Conference, LSSC 2005 (pp. 594–601), Sozopol, Bulgaria. https://doi.org/10.1007/11666806_68 (reposiTUm)

598.  V. Sverdlov, T. Grasser, H. Kosina, S. Selberherr:
"Scattering and Space-Charge Effects in Wigner Monte Carlo Simulations of Single and Double Barrier Devices";
Talk: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 2006-05-25 - 2006-05-27; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1; 29 - 30.

597.   Ceric, H., Hollauer, C., Selberherr, S. (2006).
Simulation of Texture Development Caused Stress Build-Up in Electroplated Copper Lines.
In Proceedings 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits (pp. 359–363), Singapore. (reposiTUm)

596.   Karner, M., Ungersboeck, E., Gehring, A., Holzer, S., Kosina, H., Selberherr, S. (2006).
Strain Effects on Quasi-Bound State Tunneling in Advanced SOI CMOS Technologies.
In 2006 International Conference on Simulation of Semiconductor Processes and Devices, Monterey, California, United States. https://doi.org/10.1109/sispad.2006.282898 (reposiTUm)

595.   Ungersböck, S., Sverdlov, V., Kosina, H., Selberherr, S. (2006).
Strain Engineering for CMOS Devices.
In 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings (Part 1 of 3) (pp. 124–127), Peking, Austria. (reposiTUm)

594.   Pourfath, M., Kosina, H., Cheong, B., Park, W., Selberherr, S. (2006).
The Effect of Electron-Phonon Interaction on the Static and Dynamic Response of CNTFETs.
In 2006 International Conference on Simulation of Semiconductor Processes and Devices, Monterey, California, United States. https://doi.org/10.1109/sispad.2006.282873 (reposiTUm)

593.   Ungersböck, S., Kosina, H., Selberherr, S. (2006).
The Influence of Stress on Inversion Layer Mobility.
In Abstracts Advanced Heterostructure Workshop (p. TH-2), Kona. (reposiTUm)

592.   Krishnamohan, T., Jungemann, C., Kim, D., Ungersboeck, E., Selberherr, S., Wong, P., Nishi, Y., Saraswat, K. (2006).
Theoretical Investigation of Performance in Uniaxially- And Biaxially-Strained Si, SiGe and Ge Double-Gate P-MOSFETs.
In 2006 International Electron Devices Meeting, San Francisco, CA, USA. https://doi.org/10.1109/iedm.2006.346938 (reposiTUm)

591.   Ceric, H., Hollauer, C., Selberherr, S. (2006).
Three-Dimensional Simulation of Intrinsic Stress Build-Up in Thin Films.
In 2006 International Conference on Simulation of Semiconductor Processes and Devices, Monterey, California, United States. https://doi.org/10.1109/sispad.2006.282869 (reposiTUm)

590.   Holzer, S., Hollauer, C., Ceric, H., Karner, M., Grasser, T., Langer, E., Selberherr, S. (2006).
Three-Dimensional Transient Interconnect Analysis With Regard to Mechanical Stress.
In Proceedings 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) (pp. 154–157), Singapore. (reposiTUm)

589.   Selberherr, S. (2006).
Tools, Methodologies and Scientific Issues for the Modeling of Advanced Semiconductor Devices.
In Abstracts of Workshop on Semiconductors and Micro-, Nano-Technology (pp. 12–15), Campinas. (reposiTUm)

588.  M. Pourfath, H. Kosina, S. Selberherr:
"Tunneling-CNTFETs";
Poster: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 2006-05-25 - 2006-05-27; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1; 291 - 292.

587.  M. Karner, A. Gehring, S. Holzer, M. Pourfath, M. Wagner, H. Kosina, T. Grasser, S. Selberherr:
"VSP - A Multi-Purpose Schrödinger-Poisson Solver for TCAD Applications";
Poster: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 2006-05-25 - 2006-05-27; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1; 255 - 256.

586.   Karner, M., Gehring, A., Wagner, M., Entner, R., Holzer, S., Gös, W., Vasicek, M., Grasser, T., Kosina, H., Selberherr, S. (2006).
VSP-A Gate Stack Analyzer.
In WODIM 2006 14th Workshop on Dielectrics in Microelectronics Workshop Program and Abstracts (pp. 101–102), Catania. (reposiTUm)

585.   Pourfath, M., Kosina, H., Selberherr, S. (2005).
A Fast and Stable Poisson-Schrödinger Solver for the Analysis of Carbon Nanotube Transistors.
In 15th Workshop on Modelling and Simulation of Electron Devices (pp. 95–96), Pisa, Austria. (reposiTUm)

584.   Dhar, S., Kosina, H., Palankovski, V., Ungersböck, S., Selberherr, S. (2005).
A Physically-Based Electron Mobility Model for Strained Si Devices.
In NSTI Nanotech Technical Proceedings (pp. 13–16), Anaheim, Austria. (reposiTUm)

583.   Sheikholeslami, A., Parhami, F., Heinzl, R., Al-Ani, E., Heitzinger, C., Badrieh, F., Puchner, H., Grasser, T., Selberherr, S. (2005).
Applications of Three-Dimensional Topography Simulation in the Design of Interconnect Lines.
In 2005 International Conference On Simulation of Semiconductor Processes and Devices, Tokyo, Japan. https://doi.org/10.1109/sispad.2005.201504 (reposiTUm)

582.   Ceric, H., Deshpande, V., Hollauer, C., Holzer, S., Grasser, T., Selberherr, S. (2005).
Comprehensive Analysis of Vacancy Dynamics Due to Electromigration.
In Proceedings of the 12th International Symposium on the Physical, Failure Analysis of Integrated Circuits (pp. 100–103), Singapore. (reposiTUm)

581.   Gehring, A., Selberherr, S. (2005).
Current Transport Models for Nano-Scale Semiconductor Devices.
In Proc. 9th World Multi-Conf.on Systemics, Cybernetics and Informatics (pp. 366–371), Orlando, Austria. (reposiTUm)

580.   Wessner, W., Ceric, H., Cervenka, J., Selberherr, S. (2005).
Dynamic Mesh Adaptation for Three-Dimensional Electromigration Simulation.
In 2005 International Conference On Simulation of Semiconductor Processes and Devices, Tokyo, Japan. https://doi.org/10.1109/sispad.2005.201494 (reposiTUm)

579.   Karner, M., Gehring, A., Kosina, H., Selberherr, S. (2005).
Efficient Calculation of Quasi-Bound State Tunneling in CMOS Devices.
In 2005 International Conference On Simulation of Semiconductor Processes and Devices, Tokyo, Japan. https://doi.org/10.1109/sispad.2005.201466 (reposiTUm)

578.   Karner, M., Gehring, A., Holzer, S., Kosina, H., Selberherr, S. (2005).
Efficient Calculation of Quasi-Bound State Tunneling Through Stacked Dielectrics.
In 208th ECS Meeting (p. 1), Honolulu, Austria. (reposiTUm)

577.   Pourfath, M., Park, W., Kosina, H., Selberherr, S. (2005).
Fast Convergent Schrödinger-Poisson Solver for the Static and Dynamic Analysis of Carbon Nanotube Field Effect Transistors.
In Abstracts of the 5th International Conference on Large-Scale Scientific Computations (pp. 50–51), Sozopol, Bulgaria. (reposiTUm)

576.   Pourfath, M., Cheong, B., Park, W., Kosina, H., Selberherr, S. (2005).
High Performance Carbon Nanotube Field Effect Transistor With the Potential for Tera Level Integration.
In ULIS 2005 6th International Conference on Ultimate Integration of Silicon Proceedings of the Conference (pp. 95–98), Bologna, Austria. (reposiTUm)

575.   Entner, R., Gehring, A., Kosina, H., Grasser, T., Selberherr, S. (2005).
Impact of Multi-Trap Assisted Tunneling on Gate Leakage of CMOS Memory Devices.
In NSTI Nanotech Technical Proceedings (pp. 45–48), Anaheim, Austria. (reposiTUm)

574.   Wittmann, R., Puchner, H., Hinh, L., Ceric, H., Gehring, A., Selberherr, S. (2005).
Impact of NBTI-driven Parameter Degradation on Lifetime of a 90nm P-Mosfet.
In Final Report of the IEEE International Integrated Reliability Workshop (IIRW) (pp. 99–102), S. Lake Tahoe. (reposiTUm)

573.   Pourfath, M., Kosina, H., Cheong, B., Park, W., Selberherr, S. (2005).
Improving DC and AC Characteristics of Ohmic Contact Carbon Nanotube Field Effect Transistors.
In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 541–544), Montreux, Austria. (reposiTUm)

572.   Sheikholeslami, A., Holzer, S., Heitzinger, C., Leicht, M., Häberlen, O., Fugger, J., Grasser, T., Selberherr, S. (2005).
Inverse Modeling of Oxid Deposition Using Measurements of a TEOS CVD Process.
In 2005 PhD Research in Microelectronics and Electronics (pp. 279–282), Lausanne, Austria. (reposiTUm)

571.   Hollauer, C., Holzer, S., Ceric, H., Wagner, S., Grasser, T., Selberherr, S. (2005).
Investigation of Thermo-Mechanical Stress in Modern Interconnect Layouts.
In Proceedings of The Sixth International Congress on Thermal Stresses (pp. 637–640), Wien, Austria. (reposiTUm)

570.   Sheikholeslami, A., Al-Ani, E., Heinzl, R., Heitzinger, C., Parhami, F., Badrieh, F., Puchner, H., Grasser, T., Selberherr, S. (2005).
Level Set Method Based General Topography Simulator and Its Application in Interconnect Processes.
In ULIS 2005 6th International Conference on Ultimate Integration of Silicon (pp. 139–142), Bologna, Austria. (reposiTUm)

569.   Holzer, S., Selberherr, S. (2005).
Material Parameter Identification for Interconnect Analysis.
In Proceedings of the XIII International Workshop on Physics of Semiconductor Devices (pp. 635–641), New Dehli. (reposiTUm)

568.   Ceric, H., Hollauer, C., Selberherr, S. (2005).
Microstructure and Stress Aspects of Electromigration Modeling.
In 8th International Workshop on Stress-Induced Phenomena in Metallization (p. P 17), Dresden. (reposiTUm)

567.   Sverdlov, V., Kosina, H., Selberherr, S. (2005).
Modeling Current Transport in Ultra-Scaled Field Effect Transistors.
In Proceedings of the 2005 IEEE Conference on Electron Devices and Solid-State Circuits (pp. 385–390), Hong Kong, Austria. (reposiTUm)

566.   Entner, R., Gehring, A., Kosina, H., Grasser, T., Selberherr, S. (2005).
Modeling of Tunneling Currents for Highly Degraded CMOS Devices.
In 2005 International Conference On Simulation of Semiconductor Processes and Devices, Tokyo, Japan. https://doi.org/10.1109/sispad.2005.201512 (reposiTUm)

565.   Dhar, S., Karlowatz, G., Ungersböck, S., Kosina, H., Selberherr, S. (2005).
Modeling of Velocity-Field Characteristics in Strained Silicon.
In Proceedings of the XIII International Workshop on Physics of Semiconductor Devices (pp. 1060–1063), New Dehli. (reposiTUm)

564.   Wittmann, R., Hössinger, A., Selberherr, S. (2005).
Monte Carlo Simulation of Ion Implantation for Doping of Strained Silicon MOSFETs.
In 2005 International Conference On Simulation of Semiconductor Processes and Devices, Tokyo, Japan. https://doi.org/10.1109/sispad.2005.201505 (reposiTUm)

563.   Nentchev, A., Sabelka, R., Wessner, W., Selberherr, S. (2005).
On-Chip Interconnect Simulation of Parasitic Capacitances in Periodic Structures.
In The 2005 European Simulation and Modelling Conference Proceedings (pp. 420–424), Porto, Austria. (reposiTUm)

562.   Kosina, H., Sverdlov, V., Ringhofer, C., Nedjalkov, M., Selberherr, S. (2005).
Quantum Correction to the Semiclassical Electron-Phonon Scattering Operator.
In Abstracts of the 5th International Conference on Large-Scale Scientific Computations (pp. 36–37), Sozopol, Bulgaria. (reposiTUm)

561.   Gehring, A., Sverdlov, V., Kosina, H., Selberherr, S. (2005).
Quantum Transport in Ultra-Scaled Double-Gate MOSFETs: A Wigner Function-Based Monte Carlo Approach.
In EUROSOI 2005 First Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (pp. 71–72), Granada, Austria. (reposiTUm)

560.   Pourfath, M., Kosina, H., Selberherr, S. (2005).
Rigorous Modeling of Carbon Nanotube Field Effect Transistors.
In Abstracts Collection Seventh International Conference on New Phenomena in Mesoscopic Systems Fifth International Conference on Surface and Interfaces in Mesoscopic Devices (pp. 155–156), Maui. (reposiTUm)

559.   Nentchev, A., Sabelka, R., Selberherr, S. (2005).
Simplification of Spacial Structures by Simulation With Periodic Boundary Conditions.
In 2005 Proceedings Twenty Second International VLSI Multilevel Interconnection Conference (pp. 547–552), Fremont, Austria. (reposiTUm)

558.   Wittmann, R., Puchner, H., Hinh, L., Ceric, H., Gehring, A., Selberherr, S. (2005).
Simulation of Dynamic NBTI Degradation for a 90 Nm CMOS Technology.
In NSTI Nanotech Technical Proceedings (pp. 29–32), Anaheim, Austria. (reposiTUm)

557.   Pourfath, M., Kosina, H., Cheong, B., Park, W., Selberherr, S. (2005).
The Effect of Device Geometry on the Static and Dynamic Response of Carbon Nanotube Field Effect Transistors.
In 5th IEEE Conference on Nanotechnology, 2005., Nagoya, Austria. https://doi.org/10.1109/nano.2005.1500641 (reposiTUm)

556.   Hollauer, C., Ceric, H., Selberherr, S. (2005).
Three-Dimensional Simulation of Stress Dependent Thermal Oxidation.
In 2005 International Conference On Simulation of Semiconductor Processes and Devices, Tokyo, Japan. https://doi.org/10.1109/sispad.2005.201503 (reposiTUm)

555.   Hollauer, C., Ceric, H., Selberherr, S. (2005).
Three-Dimensional Simulation of Thermal Oxidation and the Influence of Stress.
In 208th ECS Meeting (p. 1), Los Angeles. (reposiTUm)

554.   Al-Ani, E., Heinzl, R., Schwaha, P., Grasser, T., Selberherr, S. (2005).
Three-Dimensional State-Of-The-Art Topography Simulation.
In The 2005 European Simulation and Modelling Conference Proceedings (pp. 430–432), Porto, Austria. (reposiTUm)

553.   Holzer, S., Hollauer, C., Ceric, H., Wagner, S., Entner, R., Langer, E., Grasser, T., Selberherr, S. (2005).
Three-Dimensional Transient Electro-Thermal Interconnect Simulation for Stress and Electromigration Analysis.
In NSTI Nanotech Technical Proceedings (pp. 620–623), Anaheim, Austria. (reposiTUm)

552.   Holzer, S., Hollauer, C., Ceric, H., Wagner, S., Langer, E., Grasser, T., Selberherr, S. (2005).
Transient Electro-Thermal Investigations of Interconnect Structures Exposed to Mechanical Stress.
In VLSI Circuits and Systems II (pp. 380–387), Sevilla, Spain. https://doi.org/10.1117/12.608414 (reposiTUm)

551.   Sverdlov, V., Gehring, A., Kosina, H., Selberherr, S. (2005).
Tunneling and Intersubband Coupling in Ultra-Thin Body Double-Gate MOSFETs.
In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 93–96), Montreux, Austria. (reposiTUm)

550.   Pourfath, M., Gehring, A., Cheong, B., Park, W., Kosina, H., Selberherr, S. (2005).
Vertically Grown Coaxial Double Gate Carbon Nanotube Field Effect Transistors for Tera Level Integration.
In NSTI Nanotech Technical Proceedings (pp. 128–131), Anaheim, Austria. (reposiTUm)

549.   Heitzinger, C., Sheikholeslami, A., Fugger, J., Häberlen, O., Leicht, M., Selberherr, S. (2004).
A Case Study in Predictive Three-Dimensional Topography Simulation Based on a Level-Set Algorithm.
In 205th ECS Meeting (pp. 132–142), San Antonio, Austria. (reposiTUm)

548.  R. Entner, A. Gehring, T. Grasser, S. Selberherr:
"A Comparison of Quantum Correction Models for the Three-Dimensional Simulation of FinFET Structures";
Poster: International Spring Seminar on Electronics Technology (ISSE), Sofia; 2004-05-13 - 2004-05-16; in: "Proceedings IEEE International Spring Seminar on Electronics Technology 27th ISSE 2004", IEEE, 1 (2004), ISBN: 0-7803-8422-9; 114 - 117.

547.  T. Grasser, R. Kosik, C. Jungemann, H. Kosina, B. Meinerzhagen, S. Selberherr:
"A Non-Parabolic Six Moments Model for the Simulation of Sub-100 nm Devices";
Talk: International Workshop on Computational Electronics (IWCE), West Lafayette, IN, USA; 2004-10-24 - 2004-10-27; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2004), ISBN: 0-7803-8649-3; 36 - 37. https://doi.org/10.1109/IWCE.2004.1407308

546.  T. Ayalew, T. Grasser, H. Kosina, S. Selberherr:
"Accurate Modeling of Lattice Site-Dependent Incomplete Ionization in α-SiC Devices";
Poster: European Conference on Silicon Carbide and Related Materials (ECSCRM), Bologna; 2004-08-31 - 2004-09-04; in: "5th European Conference on Silicon Carbide and Related Materials Book of Abstracts", (2004), 92 - 93.

545.  T. Ayalew, T. Grasser, H. Kosina, S. Selberherr:
"Accurate Modeling of Lattice Site-Dependent Ionization Level of Impurities in α-SiC Devices";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", Springer, (2004), ISBN: 3211224688; 295 - 298. https://doi.org/10.1007/978-3-7091-0624-2_69

544.  T. Grasser, C. Jungemann, H. Kosina, B. Meinerzhagen, S. Selberherr:
"Advanced Transport Models for Sub-Micrometer Devices";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany (invited); 2004-09-02 - 2004-09-04; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", Springer, (2004), ISBN: 3211224688; 1 - 8. https://doi.org/10.1007/978-3-7091-0624-2_1

543.  V. Palankovski, S. Selberherr:
"Analysis of High Speed Heterostructure Devices";
Talk: International Conference on Microelectronics (MIEL), Nis (invited); 2004-05-16 - 2004-05-19; in: "Proceedings of the International Conference on Microelectronics (MIEL)", (2004), ISBN: 0-7803-8166-1; 115 - 122. https://doi.org/10.1109/ICMEL.2004.1314567

542.  W. Wessner, Ch. Hollauer, A. Hössinger, S. Selberherr:
"Anisotropic Laplace Refinement for Three-Dimensional Oxidation Simulation";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", Springer, (2004), ISBN: 3211224688; 165 - 168. https://doi.org/10.1007/978-3-7091-0624-2_39

541.  S. Wagner, T. Grasser, S. Selberherr:
"Benchmarking Linear Solvers with Semiconductor Simulation Examples";
Talk: International Conference on Scientific and Engineering Computation (ICSEC), Singapore; 2004-06-30 - 2004-07-02; in: "Proc. Intl. Conf. on Scientific & Engineering Computation (ICSEC)", (2004), 4 pages.

540.  R. Wittmann, A. Hössinger, S. Selberherr:
"Calibration for the Monte Carlo Simulation of Ion Implantation in Relaxed SiGe";
Talk: Meeting of the Electrochemical Society, SiGe and Germanium: Materials, Processing, and Devices, Honolulu; 2004-10-03 - 2004-10-08; in: "206th ECS Meeting", (2004), ISBN: 1-56677-420-9; 181 - 192.

539.  S. Wagner, T. Grasser, C. Fischer, S. Selberherr:
"Concepts and Implementation of an Advanced Equation Assembly Module";
Talk: World Multiconference on Systemics, Cybernetics and Informatics (SCI), Orlando; 2004-07-18 - 2004-07-21; in: "The 8th World Multi-Conference on Systemics, Cybernetics and Informatics", (2004), ISBN: 980-6560-13-2; 150 - 155.

538.  H. Kosina, S. Selberherr:
"Device Simulation Demands of Upcoming Microelectronic Devices";
Talk: Advanced Workshop on Frontiers in Electronics (WOFE), Aruba (invited); 2004-12-17 - 2004-12-22; in: "Extended Abstracts of WOFE 2004", (2004), 6.

537.  A. Gehring, S. Selberherr:
"Evolution of Current Transport Models for Engineering Applications";
Talk: International Workshop on Computational Electronics (IWCE), West Lafayette, IN, USA (invited); 2004-10-24 - 2004-10-27; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2004), ISBN: 0-7803-8649-3; 20 - 21. https://doi.org/10.1109/IWCE.2004.1407298

536.  A. Hössinger, R. Minixhofer, S. Selberherr:
"Full Three-Dimensional Analysis of a Non-Volatile Memory Cell";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", Springer, (2004), ISBN: 3211224688; 129 - 132. https://doi.org/10.1007/978-3-7091-0624-2_31

535.  A. Gehring, S. Selberherr:
"Gate Current Modeling for MOSFETs";
Talk: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Punta Cana (invited); 2004-11-03 - 2004-11-05; in: "Proceedings of the ICCDCS 2004", (2004), ISBN: 0-7803-8777-5; 1 - 8.

534.  A. Gehring, S. Selberherr:
"Gate Leakage Models for Device Simulation";
Talk: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Beijing (invited); 2004-10-18 - 2004-10-21; in: "7th International Conference on Solid-State and Integrated Circuits Technology Proceedings", R. Huang, M. Yu, J. Liou, T. Hiramoto, C. Claeys (ed.); IEEE Press, Volume II (2004), ISBN: 0-7803-8511-x; 971 - 976.

533.  V. Palankovski, S. Dhar, H. Kosina, S. Selberherr:
"Improved Carrier Transport in Strained Si/Ge Devices";
Talk: Asia Pacific Microwave Conference (APMC), New Delhi (invited); 2004-12-15 - 2004-12-18; in: "Asia Pacific Microwave Conference 2004, Abstracts and Proceedings (CDROM)", (2004), ISBN: 81-7764-722-9; 4 pages.

532.  M. Pourfath, E. Ungersböck, A. Gehring, B.-H. Cheong, W. Park, H. Kosina, S. Selberherr:
"Improving the Ambipolar Behavior of Schottky Barrier Carbon Nanotube Field Effect Transistors";
Talk: European Solid-State Device Research Conference (ESSDERC), Leuven; 2004-09-21 - 2004-09-23; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", Institute of Electrical and Electronics Engineers, (2004), ISBN: 0780384784; 429 - 432.

531.  W. Wessner, S. Wagner, T. Grasser, S. Selberherr:
"Meshing Aspects on Three-Dimensional Fin-Fet Device Simulations";
Talk: Asia Pacific Microwave Conference (APMC), New Delhi; 2004-12-15 - 2004-12-18; in: "Asia Pacific Microwave Conference 2004, Abstracts and Proceedings (CDROM)", (2004), ISBN: 81-7764-722-9; 4 pages.

530.  S. Wagner, T. Grasser, S. Selberherr:
"Mixed-Mode Device and Circuit Simulation";
Talk: International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES), Szczecin (invited); 2004-06-24 - 2004-06-26; in: "Proceedings of the 11th International Conference on Mixed Design of Integrated Circuits and Systems MIXDES", (2004), ISBN: 83-919289-7-7; 36 - 41.

529.  S. Dhar, H. Kosina, V. Palankovski, E. Ungersböck, S. Selberherr:
"Modeling of Electron Mobility in Strained Si Devices";
Talk: Semiconductor Advances for Future Electronics (SAFE), Veldhoven, Netherlands; 2004-11-25 - 2004-11-26; in: "Proceedings of SAFE 2004", Technology Foundation, Utrecht, (2004), ISBN: 90-73461-43-x; 793 - 796. https://doi.org/10.13140/2.1.1839.7126

528.  A. Gehring, S. Selberherr:
"Modeling of Wearout, Leakage, and Breakdown of Gate Dielectrics";
Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Hsinchu; 2004-07-05 - 2004-07-08; in: "11th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2004), ISBN: 0-7803-8454-7; 61 - 64.

527.  R. Wittmann, A. Hössinger, S. Selberherr:
"Monte Carlo Simulation of Ion Implantation in Silicon-Germanium Alloys";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", Springer, (2004), ISBN: 3211224688; 169 - 172. https://doi.org/10.1007/978-3-7091-0624-2_40

526.  M. Pourfath, E. Ungersböck, A. Gehring, W. Park, B.-H. Cheong, H. Kosina, S. Selberherr:
"Numerical Analysis of Coaxial Double Gate Schottky Barrier Carbon Nanotube Field Effect Transistors";
Poster: International Workshop on Computational Electronics (IWCE), West Lafayette, IN, USA; 2004-10-24 - 2004-10-27; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2004), ISBN: 0-7803-8649-3; 237 - 238. https://doi.org/10.1109/IWCE.2004.1407414

525.  S.-C. Kim, W. Bahng, N.-K. Kim, T. Ayalew, T. Grasser, S. Selberherr:
"Numerical Simulation and Optimization for 900V 4H-SiC DiMOSFET fabrication";
Poster: European Conference on Silicon Carbide and Related Materials (ECSCRM), Bologna; 2004-08-31 - 2004-09-04; in: "5th European Conference on Silicon Carbide and Related Materials Book of Abstracts", (2004), 492 - 493.

524.  T. Ayalew, S. Wagner, T. Grasser, S. Selberherr:
"Numerical Simulation of Microwave MESFETs in 4H-SiC Fabricated Using Epitaxial Layers on Semi-Insulating Substrates";
Poster: European Conference on Silicon Carbide and Related Materials (ECSCRM), Bologna; 2004-08-31 - 2004-09-04; in: "5th European Conference on Silicon Carbide and Related Materials Book of Abstracts", (2004), 76 - 77.

523.  V. Palankovski, S. Selberherr:
"Numerical Simulation of Selected Semiconductor Devices";
Talk: International Spring Seminar on Electronics Technology (ISSE), Sofia; 2004-05-13 - 2004-05-16; in: "Proceedings IEEE International Spring Seminar on Electronics Technology 27th ISSE 2004", IEEE, 1 (2004), ISBN: 0-7803-8422-9; 122 - 125. https://doi.org/10.1109/ISSE.2004.1490390

522.  A. Gehring, S. Selberherr:
"On the Calculation of Quasi-Bound States and Their Impact on Direct Tunneling in CMOS Devices";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", Springer, (2004), ISBN: 3211224688; 25 - 28. https://doi.org/10.1007/978-3-7091-0624-2_6

521.  T. Grasser, H. Kosina, S. Selberherr:
"On the Validity of the Relaxation Time Approximation for Macroscopic Transport Models";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", Springer, (2004), ISBN: 3211224688; 109 - 112. https://doi.org/10.1007/978-3-7091-0624-2_26

520.  S. Holzer, A. Sheikholeslami, S. Wagner, C. Heitzinger, T. Grasser, S. Selberherr:
"Optimization and Inverse Modeling for TCAD Applications";
Talk: Symposium on Nano Device Technology (SNDT), Hsinchu; 2004-05-12 - 2004-05-13; in: "Proceedings of the Symposium on Nano Device Technology", (2004), 113 - 116.

519.  E. Ungersböck, M. Pourfath, A. Gehring, H. Kosina, B.-H. Cheong, S. Selberherr:
"Optimization of Carbon Nanotube Field Effect Transistors";
Poster: Symposium on Nano Device Technology (SNDT), Hsinchu; 2004-05-12 - 2004-05-13; in: "Proceedings of the Symposium on Nano Device Technology", (2004), 117 - 120.

518.  M. Pourfath, E. Ungersböck, A. Gehring, B.-H. Cheong, W. Park, H. Kosina, S. Selberherr:
"Optimization of Schottky Barrier Carbon Nanotube Field Effect Transistors";
Talk: Nano and Giga Challenges in Microelectronics (NGCM), Krakau; 2004-09-13 - 2004-09-17; in: "Nano and Giga Challenges in Microelectronics Book of Abstracts", (2004), 201.

517.  S. Wagner, T. Grasser, S. Selberherr:
"Performance Evaluation of Linear Solvers Employed for Semiconductor Device Simulation";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", Springer, (2004), ISBN: 3211224688; 351 - 354. https://doi.org/10.1007/978-3-7091-0624-2_83

516.  S. Wagner, T. Grasser, S. Selberherr:
"Physical Modeling of Semiconductor Devices for Microwave Applications";
Talk: Asia Pacific Microwave Conference (APMC), New Delhi (invited); 2004-12-15 - 2004-12-18; in: "Asia Pacific Microwave Conference 2004. Abstracts and Proceedings (CDROM)", (2004), ISBN: 81-7764-722-9; 4 pages.

515.  T. Ayalew, S. Kim, T. Grasser, S. Selberherr:
"SiC Power Rectifier With Improved Switching Performance "Numerical Analysis of Merged PiN Schottky Diode"";
Poster: European Conference on Silicon Carbide and Related Materials (ECSCRM), Bologna; 2004-08-31 - 2004-09-04; in: "5th European Conference on Silicon Carbide and Related Materials Book of Abstracts", (2004), 476 - 477.

514.  H. Ceric, R. Sabelka, S. Holzer, W. Wessner, S. Wagner, T. Grasser, S. Selberherr:
"The Evolution of the Resistance and Current Density During Electromigration";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", Springer, (2004), ISBN: 3211224688; 331 - 334. https://doi.org/10.1007/978-3-7091-0624-2_78

513.  M. Pourfath, E. Ungersböck, A. Gehring, B.-H. Cheong, H. Kosina, S. Selberherr:
"Three-Dimensional Analysis of Schottky Barrier Carbon Nanotube Field Effect Transistors";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", Springer, (2004), ISBN: 3211224688; 149 - 152. https://doi.org/10.1007/978-3-7091-0624-2_35

512.   Sheikholeslami, A., Heitzinger, C., Al-Ani, E., Heinzl, R., Grasser, T., Selberherr, S. (2004).
Three-Dimensional Surface Evolution Using a Level Set Method.
In Proceedings of the Iranian Ph.D. Students Seminar on Computer Science, Mathematics and Statistics (ICSMS), Paris, Austria. (reposiTUm)

511.  A. Sheikholeslami, C. Heitzinger, F. Badrieh, H. Puchner, S. Selberherr:
"Three-Dimensional Topography Simulation Based on a Level Set Method";
Talk: International Spring Seminar on Electronics Technology (ISSE), Sofia; 2004-05-13 - 2004-05-16; in: "Proceedings IEEE International Spring Seminar on Electronics Technology 27th ISSE 2004", IEEE, 2 (2004), ISBN: 0-7803-8422-9; 263 - 265.

510.  A. Sheikholeslami, C. Heitzinger, T. Grasser, S. Selberherr:
"Three-Dimensional Topography Simulation for Deposition and Etching Processes Using a Level Set Method";
Talk: International Conference on Microelectronics (MIEL), Nis; 2004-05-16 - 2004-05-19; in: "Proceedings of the International Conference on Microelectronics (MIEL)", (2004), ISBN: 0-7803-8166-1; 241 - 244. https://doi.org/10.1109/ICMEL.2004.1314606

509.  S. Wagner, V. Palankovski, T. Grasser, G. Röhrer, S. Selberherr:
"A Direct Extraction Feature for Scattering Parameters of SiGe-HBTs";
Talk: International SiGe Technology and Device Meeting (ISTDM), Nagoya; 2003-01-15 - 2003-01-17; in: "First International SiGe Technology and Device Meeting", (2003), 83 - 84.

508.  S. Wagner, T. Grasser, C. Fischer, S. Selberherr:
"A Generally Applicable Approach for Advanced Equation Assembling";
Talk: International Conference on Software Engineering and Applications (SEA), Marina del Rey; 2003-11-03 - 2003-11-05; in: "Proceedings of the 7th IASTED International Conference on Software Engineering and Applications (SEA)", (2003), ISBN: 088-9863-94-6; 494 - 499.

507.  A. Sheikholeslami, C. Heitzinger, S. Selberherr:
"A Method for Generating Structurally Aligned Grids Using a Level Set Approach";
Talk: European Simulation Multiconference (ESM), Nottingham; 2003-06-09 - 2003-06-11; in: "Proc. 17th European Simulation Multiconference: Modelling and Simulation", (2003), ISBN: 3-936150-25-7; 496 - 501.

506.  C. Heitzinger, A. Sheikholeslami, J.M. Park, S. Selberherr:
"A Method for Generating Structurally Aligned High Quality Grids and its Application to the Simulation of a Trench Gate MOSFET";
Poster: European Solid-State Device Research Conference (ESSDERC), Estoril; 2003-09-16 - 2003-09-18; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2003), ISBN: 0-7803-7999-3; 457 - 460.

505.   Kosina, H., Nedjalkov, M., Selberherr, S. (2003).
A Monte Carlo Method Seamlessly Linking Quantum and Classical Transport Calculations.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 35–36), Urbana-Champaign, IL, USA. (reposiTUm)

504.  A. Hössinger, J. Cervenka, S. Selberherr:
"A Multistage Smoothing Algorithm for Coupling Cellular and Polygonal Datastructures";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 2003-09-03 - 2003-09-05; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2003), ISBN: 0-7803-7826-1; 259 - 262. https://doi.org/10.1109/SISPAD.2003.1233686

503.  M. Nedjalkov, H. Kosina, S. Selberherr:
"A Quasi-Particle Model of the Electron - Wigner Potential Interaction";
Poster: International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS), Modena; 2003-07-28 - 2003-08-01; in: "Proceedings HCIS-13", (2003), Th 5-1.

502.  S. Wagner, T. Grasser, C. Fischer, S. Selberherr:
"A Simulator Module for Advanced Equation Assembling";
Talk: European Simulation Symposium (ESS), Delft; 2003-10-26 - 2003-10-29; in: "Simulation in Industry, 15th European Simulation Symposium", (2003), ISBN: 3-936150-28-1; 55 - 64.

501.  H. Kosina, M. Nedjalkov, S. Selberherr:
"A Stable Backward Monte Carlo Method for the Solution of the Boltzmann Equation";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol; 2003-06-04 - 2003-06-08; in: "Abstracts of the 4th International Conference on Large-Scale Scientific Computations", (2003), 24.

500.  M. Nedjalkov, H. Kosina, S. Selberherr:
"A Weight Decomposition Approach to the Sign Problem in Wigner Transport Simulations";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 2003-06-04 - 2003-06-08; in: "Abstracts of the 4th International Conference on Large-Scale Scientific Computations", (2003), 35 - 36.

499.  S. Smirnov, H. Kosina, M. Nedjalkov, S. Selberherr:
"A Zero Field Monte Carlo Algorithm Accounting for the Pauli Exclusion Principle";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 2003-06-04 - 2003-06-08; in: "Abstracts of the 4th International Conference on Large-Scale Scientific Computations", (2003), 40 - 41.

498.  S. Wagner, T. Grasser, C. Fischer, S. Selberherr:
"Advanced Equation Assembling Techniques for Numerical Simulators";
Talk: European Simulation and Modeling Conference (ESMC), Naples; 2003-10-27 - 2003-10-29; in: "The 2003 European Simulation and Modelling Conference", (2003), ISBN: 90-77381-04-x; 390 - 394.

497.  C. Heitzinger, A. Hössinger, S. Selberherr:
"An Algorithm for Smoothing Three-Dimensional Monte Carlo Ion Implantation Simulation Results";
Talk: International Symposium on Mathematical Modeling (MATHMOD), Wien; 2003-02-05 - 2003-02-07; in: "4th IMACS Symposium on Mathematical Modelling", (2003), ISBN: 3-901608-24-9; 702 - 711.

496.  A. Gehring, T. Grasser, H. Kosina, S. Selberherr:
"An Energy Transport Gate Current Model Based on a Non-Maxwellian Energy Distribution";
Talk: International Conference on Modeling and Simulation of Microsystems (MSM), San Francisco; 2003-02-23 - 2003-02-27; in: "Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show", (2003), ISBN: 0-9728422-1-7; 48 - 51.

495.  E. Ungersböck, A. Gehring, H. Kosina, S. Selberherr, B.-H. Cheong, W. B. Choi:
"Analysis of Carrier Transport in Carbon Nanotube FET Devices";
Talk: International Workshop on the Physics of Semiconductor Devices (IWPSD), Madras; 2003-12-16 - 2003-12-20; in: "Proceedings of the Twelfth International Workshop on the Physics of Semiconductor Devices", (2003), ISBN: 81-7319-567-6; 1059 - 1061.

494.   Gehring, A., Kosina, H., Selberherr, S. (2003).
Analysis of Gate Dielectric Stacks Using the Transmitting Boundary Method.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 105–106), Urbana-Champaign, IL, USA. (reposiTUm)

493.  W. Wessner, H. Ceric, C. Heitzinger, A. Hössinger, S. Selberherr:
"Anisotropic Mesh Adaption Governed by a Hessian Matrix Metric";
Talk: European Simulation Symposium (ESS), Delft; 2003-10-26 - 2003-10-29; in: "Simulation in Industry, 15th European Simulation Symposium", (2003), ISBN: 3-936150-28-1; 41 - 46.

492.  W. Wessner, A. Hössinger, S. Selberherr:
"Anisotropic Mesh Refinement for Three-Dimensional Diffusion Simulation";
Poster: Informationstagung Mikroelektronik (ME), Wien; 2003-10-01 - 2003-10-02; in: "Beiträge der Informationstagung Mikroelektronik 2003", (2003), ISBN: 3-85133-030-7; 523 - 528.

491.  A. Sheikholeslami, C. Heitzinger, S. Selberherr, F. Badrieh, H. Puchner:
"Capacitances in the Backend of a 100nm CMOS Process and their Predictive Simulation";
Poster: Informationstagung Mikroelektronik (ME), Wien; 2003-10-01 - 2003-10-02; in: "Beiträge der Informationstagung Mikroelektronik 2003", (2003), ISBN: 3-85133-030-7; 481 - 486.

490.  V. Palankovski, S. Selberherr:
"Challenges in Modeling of High-Speed Electron Devices";
Talk: International Workshop on the Physics of Semiconductor Devices (IWPSD), Madras (invited); 2003-12-16 - 2003-12-20; in: "Proceedings of the Twelfth International Workshop on the Physics of Semiconductor Devices", (2003), ISBN: 81-7319-567-6; 45 - 50.

489.  H. Kosina, G. Klimeck, M. Nedjalkov, S. Selberherr:
"Comparison of Numerical Quantum Device Models";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 2003-09-03 - 2003-09-05; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2003), ISBN: 0-7803-7826-1; 171 - 174. https://doi.org/10.1109/SISPAD.2003.1233664

488.  A. Gehring, H. Kosina, T. Grasser, S. Selberherr:
"Consistent Comparison of Tunneling Models for Device Simulation";
Poster: Workshop on Ultimate Integration of Silicon (ULIS), Udine; 2003-03-20 - 2003-03-21; in: "4th European Workshop on Ultimate Integration of Silicon", (2003), ISBN: 88-900984-0-6; 131 - 134.

487.  V. Palankovski, S. Selberherr:
"Critical Modeling Issues of SiGe Semiconductor Devices";
Talk: Symposium on Diagnostics and Yield, Warsaw (invited); 2003-06-22 - 2003-06-25; in: "Proceedings Symposium on Diagnostics & Yield: Advanced Silicon Devices and Technologies for ULSI era", (2003), 1 - 11.

486.  J. Cervenka, A. Hössinger, R. Minixhofer, T. Grasser, S. Selberherr:
"Dreidimensionale Modellierung Elektronischer Bauteile";
Poster: Informationstagung Mikroelektronik (ME), Wien; 2003-10-01 - 2003-10-02; in: "Beiträge der Informationstagung Mikroelektronik 2003", (2003), ISBN: 3-85133-030-7; 377 - 382.

485.  W. Wessner, C. Heitzinger, A. Hössinger, S. Selberherr:
"Error Estimated Driven Anisotropic Mesh Refinement for Three-Dimensional Diffusion Simulation";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 2003-09-03 - 2003-09-05; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2003), ISBN: 0-7803-7826-1; 109 - 112. https://doi.org/10.1109/SISPAD.2003.1233649

484.  A. Gehring, S. Harasek, E. Bertagnolli, S. Selberherr:
"Evaluation of ZrO2 Gate Dielectrics for Advanced CMOS Devices";
Poster: European Solid-State Device Research Conference (ESSDERC), Estoril; 2003-09-16 - 2003-09-18; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2003), ISBN: 0-7803-7999-3; 473 - 476.

483.  S. Holzer, R. Minixhofer, C. Heitzinger, J. Fellner, T. Grasser, S. Selberherr:
"Extraction of Material Parameters Based on Inverse Modeling of Three-Dimensional Interconnect Structures";
Talk: Workshop on Thermal Investigations of ICs and Systems (THERMINIC), Aix-en-Provence; 2003-09-24 - 2003-09-26; in: "International Workshop on Thermal Investigations of ICs and Systems", (2003), ISBN: 2-848-130202; 263 - 268.

482.  C. Heitzinger, A. Sheikholeslami, F. Badrieh, H. Puchner, S. Selberherr:
"Feature Scale Simulation of Advanced Etching Processes";
Talk: Meeting of the Electrochemical Society, Physical Electrochemistry, Orlando; 2003-10-12 - 2003-10-16; in: "204th ECS Meeting", (2003), ISBN: 1-56677-398-9; 1259.

481.  F. Badrieh, H. Puchner, C. Heitzinger, A. Sheikholeslami, S. Selberherr:
"From Feature Scale Simulation to Backend Simulation for a 100nm CMOS Process";
Poster: European Solid-State Device Research Conference (ESSDERC), Estoril; 2003-09-16 - 2003-09-18; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2003), ISBN: 0-7803-7999-3; 441 - 444.

480.  J.M. Park, T. Grasser, S. Selberherr:
"High-Voltage Super-Junction SOI-LDMOSFETs with Reduced Drift Length";
Talk: Meeting of the Electrochemical Society (ECS), Paris; 2003-04-26 - 2003-05-02; in: "203rd ECS Meeting", (2003), ISBN: 1-56677-347-4; 273 - 282.

479.  R. Wittmann, A. Hössinger, S. Selberherr:
"Improvement of the Statistical Accuracy for the Three-Dimensional Monte Carlo Simulation of Ion Implantation";
Talk: European Simulation Symposium (ESS), Delft; 2003-10-26 - 2003-10-29; in: "Simulation in Industry, 15th European Simulation Symposium", (2003), ISBN: 3-936150-28-1; 35 - 40.

478.  K. Dragosits, V. Palankovski, S. Selberherr:
"Mobility Modeling in Presence of Quantum Effects";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 2003-09-03 - 2003-09-05; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2003), ISBN: 0-7803-7826-1; 271 - 274. https://doi.org/10.1109/SISPAD.2003.1233689

477.  V. Palankovski, S. Selberherr:
"Modeling High Speed Semiconductor Devices of Modern Communication Systems";
Talk: World Multiconference on Systemics, Cybernetics and Informatics (SCI), Orlando; 2003-07-27 - 2003-07-30; in: "Proc. 7th World Multiconference on Systemics, Cybernetics and Informatics", (2003), ISBN: 980-6560-01-9; 97 - 102.

476.  T. Ayalew, J.M. Park, A. Gehring, T. Grasser, S. Selberherr:
"Modeling and Simulation of SiC MOSFETs";
Talk: International Conference on Applied Modelling and Simulation, Marbella; 2003-09-03 - 2003-09-05; in: "Proceedings of the Twelfth IASTED International Conference on Applied Simulation and Modelling", (2003), ISBN: 0-88986-384-9; 552 - 556.

475.  H. Ceric, A. Hössinger, T. Binder, S. Selberherr:
"Modeling of Segregation on Material Interfaces by Means of the Finite Element Method";
Talk: International Symposium on Mathematical Modeling (MATHMOD), Wien; 2003-02-05 - 2003-02-07; in: "4th IMACS Symposium on Mathematical Modelling", (2003), ISBN: 3-901608-24-9; 139 - 145.

474.  V. Palankovski, S. Wagner, S. Selberherr:
"Numerical Analysis of Compound Semiconductor RF Devices";
Talk: Gallium Arsenide Integrated Circuits Symposium (GaAs IC), San Diego (invited); 2003-11-09 - 2003-11-12; in: "Proceedings of the Gallium Arsenide Integrated Circuit Symposium (GaAs IC)", (2003), ISBN: 0-7803-7833-4; 107 - 110. https://doi.org/10.1109/GAAS.2003.1252374

473.  S. Wagner, V. Palankovski, R. Quay, T. Grasser, S. Selberherr:
"Numerical Simulation of High-Speed High-Breakdown Indium Phosphide HBTs";
Talk: International Workshop on the Physics of Semiconductor Devices (IWPSD), Madras; 2003-12-16 - 2003-12-20; in: "Proceedings of the Twelfth International Workshop on the Physics of Semiconductor Devices", (2003), ISBN: 81-7319-567-6; 836 - 838.

472.  S. Wagner, V. Palankovski, G. Röhrer, T. Grasser, S. Selberherr:
"Numerische Berechnung von Silizium-Germanium Heterostruktur-Bipolartransistoren";
Poster: Informationstagung Mikroelektronik (ME), Wien; 2003-10-01 - 2003-10-02; in: "Beiträge der Informationstagung Mikroelektronik 2003", (2003), ISBN: 3-85133-030-7; 383 - 388.

471.  M. Nedjalkov, E. Atanassov, H. Kosina, S. Selberherr:
"Operator-Split Method for Variance Reduction in Stochastic Solutions of the Wigner Equation";
Talk: Seminar on Monte Carlo Methods (MCM), Berlin; 2003-09-15 - 2003-09-19; in: "IVth IMACS Seminar on Monte Carlo Methods", (2003), 6.

470.  R. Minixhofer, S. Holzer, C. Heitzinger, J. Fellner, T. Grasser, S. Selberherr:
"Optimization of Electrothermal Material Parameters Using Inverse Modeling";
Talk: European Solid-State Device Research Conference (ESSDERC), Estoril; 2003-09-16 - 2003-09-18; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2003), ISBN: 0-7803-7999-3; 363 - 366.

469.  V. Palankovski, S. Selberherr:
"Optimization of SiGe HBTs for Industrial Applications";
Talk: International SiGe Technology and Device Meeting (ISTDM), Nagoya (invited); 2003-01-15 - 2003-01-17; in: "First International SiGe Technology and Device Meeting", (2003), 267 - 268.

468.  C. Heitzinger, A. Sheikholeslami, H. Puchner, S. Selberherr:
"Predictive Simulation of Void Formation During the Deposition of Silicon Nitride and Silicon Dioxide Films";
Talk: Meeting of the Electrochemical Society (ECS), Paris; 2003-04-26 - 2003-05-02; in: "203rd ECS Meeting", (2003), ISBN: 1-56677-347-4; 356 - 365.

467.  H. Kosina, M. Nedjalkov, S. Selberherr:
"Quantum Monte Carlo Simulation of a Resonant Tunneling Diode Including Phonon Scattering";
Talk: International Conference on Modeling and Simulation of Microsystems (MSM), San Francisco; 2003-02-23 - 2003-02-27; in: "Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show", (2003), ISBN: 0-9728422-1-7; 190 - 193.

466.  T. Grasser, H. Kosina, S. Selberherr:
"Reformulation of Macroscopic Transport Models Based on the Moments of the Scattering Integral";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 2003-09-03 - 2003-09-05; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2003), ISBN: 0-7803-7826-1; 63 - 66. https://doi.org/10.1109/SISPAD.2003.1233638

465.  V. Palankovski, G. Röhrer, T. Grasser, S. Smirnov, H. Kosina, S. Selberherr:
"Rigorous Modeling Approach to Numerical Simulation of SiGe-HBTs";
Poster: International SiGe Technology and Device Meeting (ISTDM), Nagoya; 2003-01-15 - 2003-01-17; in: "First International SiGe Technology and Device Meeting", (2003), 97 - 98.

464.  V. Palankovski, S. Selberherr:
"Rigorous Modeling of High-Speed Semiconductor Devices";
Talk: Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong (invited); 2003-12-16 - 2003-12-18; in: "Proc. IEEE Conference on Electron Devices and Solid-State Circuits EDSSC", (2003), ISBN: 0-7803-7749-4; 127 - 132. https://doi.org/10.1109/EDSSC.2003.1283498

463.  T. Grasser, H. Kosina, S. Selberherr:
"Rigorous Modeling of Mobilities and Relaxation Times Using Six Moments of the Distribution Function";
Talk: Workshop on Ultimate Integration of Silicon (ULIS), Udine; 2003-03-20 - 2003-03-21; in: "4th European Workshop on Ultimate Integration of Silicon", (2003), ISBN: 88-900984-0-6; 105 - 108.

462.  T. Ayalew, J.M. Park, A. Gehring, T. Grasser, S. Selberherr:
"Silicon Carbide Accumulation-Mode Laterally Diffused MOSFET";
Poster: European Solid-State Device Research Conference (ESSDERC), Estoril; 2003-09-16 - 2003-09-18; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2003), ISBN: 0-7803-7999-3; 581 - 584.

461.  E. Ungersböck, A. Gehring, H. Kosina, S. Selberherr, B.-H. Cheong, W. B. Choi:
"Simulation of Carrier Transport in Carbon Nanotube Field Effect Transistors";
Talk: European Solid-State Device Research Conference (ESSDERC), Estoril; 2003-09-16 - 2003-09-18; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2003), ISBN: 0-7803-7999-3; 411 - 414.

460.  Ch. Hollauer, H. Ceric, S. Selberherr:
"Simulation of Thermal Oxidation: A Three-Dimensional Finite Element Approach";
Talk: European Solid-State Device Research Conference (ESSDERC), Estoril; 2003-09-16 - 2003-09-18; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2003), ISBN: 0-7803-7999-3; 383 - 386.

459.  H. Kosina, M. Nedjalkov, S. Selberherr:
"Solution of the Space-Dependent Wigner Equation Using a Particle Model";
Talk: Seminar on Monte Carlo Methods (MCM), Berlin; 2003-09-15 - 2003-09-19; in: "IVth IMACS Seminar on Monte Carlo Methods", (2003), 6.

458.  F. Jimenez-Molinos, A. Palma, A. Gehring, F. Gamiz, H. Kosina, S. Selberherr:
"Static and Transient Simulation of Inelastic Trap-Assisted Tunneling";
Talk: Workshop on Modeling and Simulation of Electron Devices (MSED), Barcelona; 2003-10-16 - 2003-10-17; in: "14th Workshop on Modeling and Simulation of Electron Devices", (2003), ISBN: 84-688-1314-1; 65 - 68.

457.  R. Wittmann, A. Hössinger, S. Selberherr:
"Statistical Analysis for the Three-Dimensional Monte Carlo Simulation of Ion Implantation";
Talk: Industrial Simulation Conference (ISC), Valencia; 2003-06-09 - 2003-06-11; in: "Industrial Simulation Conference 2003", (2003), ISBN: 90-77381-03-1; 159 - 163.

456.  S. Smirnov, H. Kosina, S. Selberherr:
"Substrate Orientation-Dependence of Electron Mobility in Strained SiGe Layers";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 2003-09-03 - 2003-09-05; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2003), ISBN: 0-7803-7826-1; 55 - 58. https://doi.org/10.1109/SISPAD.2003.1233636

455.  Ch. Hollauer, H. Ceric, S. Selberherr:
"Three-Dimensional Modeling of Thermal Oxidation of Silicon by Means of the Finite Element Method";
Talk: Industrial Simulation Conference (ISC), Valencia; 2003-06-09 - 2003-06-11; in: "Industrial Simulation Conference 2003", (2003), ISBN: 90-77381-03-1; 154 - 158.

454.  C. Heitzinger, S. Selberherr:
"A Calibrated Model for Silicon Self-Interstitial Cluster Formation and Dissolution";
Talk: International Conference on Microelectronics (MIEL), Nis; 2002-05-12 - 2002-05-15; in: "Proceedings of the International Conference on Microelectronics (MIEL)", 2 (2002), 431 - 434. https://doi.org/10.1109/MIEL.2002.1003291

453.  A. Gehring, T. Grasser, H. Kosina, S. Selberherr:
"A New Gate Current Model Accounting for a Non-Maxwellian Electron Energy Distribution Function";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 2002-09-04 - 2002-09-06; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5; 235 - 238. https://doi.org/10.1109/SISPAD.2002.1034560

452.  H. Kosina, M. Nedjalkov, S. Selberherr:
"A Particle Model for Wigner Transport through Tunneling Structures";
Talk: International Conference on Nanoelectronics and Electromagnetic Compatibility, Skiathos; 2002-09-25 - 2002-09-28; in: "Advances in Simulation, Systems Theory, and Systems Engineering", WSEAS Press, (2002), ISBN: 960-8052-70-x; 136 - 139.

451.  T. Binder, H. Ceric, A. Hössinger, S. Selberherr:
"A Strategy to Enforce the Discrete Minimax Principle on Finite Element Meshes";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 2002-09-04 - 2002-09-06; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5; 183 - 186. https://doi.org/10.1109/SISPAD.2002.1034547

450.  H. Ceric, S. Selberherr:
"An Adaptive Grid Approach for the Simulation of Electromigration Induced Void Migration";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 2002-09-04 - 2002-09-06; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5; 253 - 256. https://doi.org/10.1109/SISPAD.2002.1034566

449.  T. Grasser, H. Kosina, C. Heitzinger, S. Selberherr:
"An Impact Ionization Model Including an Explicit Cold Carrier Population";
Talk: International Conference on Modeling and Simulation of Microsystems (MSM), San Juan; 2002-04-21 - 2002-04-25; in: "Technical Proceedings of the Fifth International Conference on Modeling and Simulation of Microsystems", (2002), ISBN: 0-9708275-7-1; 572 - 575.

448.  R. Klima, T. Grasser, S. Selberherr:
"Controlling Scheme of the Device Simulator MINIMOS-NT";
Talk: European Simulation Symposium (ESS), Dresden; 2002-10-23 - 2002-10-26; in: "Proceedings European Simulation Symposium", (2002), ISBN: 3-936150-22-2; 80 - 84.

447.  V. Palankovski, S. Wagner, T. Grasser, R. Schultheis, S. Selberherr:
"Direct S-Parameter Extraction by Physical Two-Dimensional Device AC-Simulation";
Poster: International Symposium on Compound Semiconductors (ISCS), Lausanne; 2002-10-07 - 2002-10-10; in: "Proceedings of the Intl. Symposium on Compound Semiconductors", (2002), ISBN: 0-7503-0942-3; 303 - 306.

446.  V. Gopinath, S. Aronowitz, V. Palankovski, S. Selberherr:
"Effects of Stress-Induced Bandgap Narrowing on Reverse-Biased Junction Behavior";
Poster: European Solid-State Device Research Conference (ESSDERC), Florence; 2002-09-24 - 2002-09-26; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2002), ISBN: 88-900847-8-2; 631 - 634. https://doi.org/10.1109/ESSDERC.2002.195010

445.  H. Ceric, S. Selberherr:
"Electromigration Induced Evolution of Voids in Current Crowding Areas of Interconnects";
Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2002-07-08 - 2002-07-12; in: "Proceedings of the 13th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis", (2002), ISBN: 0-7803-7416-9; 140 - 144.

444.  P. Fleischmann, S. Selberherr:
"Enhanced Advancing Front Delaunay Meshing in TCAD";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 2002-09-04 - 2002-09-06; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5; 99 - 102. https://doi.org/10.1109/SISPAD.2002.1034526

443.  J.M. Park, R. Klima, S. Selberherr:
"High-Voltage Lateral Trench Gate SOI LDMOSFETs";
Poster: International Seminar on Power Semiconductors (ISPS), Prague; 2002-09-04 - 2002-09-06; in: "Proceedings ISPS 2002", (2002), ISBN: 80-01-02595-0; 241 - 244.

442.  R. Minixhofer, G. Röhrer, S. Selberherr:
"Implementation of an Automated Interface for Integration of TCAD with Semiconductor Fabrication";
Talk: European Simulation Symposium (ESS), Dresden; 2002-10-23 - 2002-10-26; in: "Proceedings European Simulation Symposium", (2002), ISBN: 3-936150-22-2; 70 - 74.

441.  S. Smirnov, H. Kosina, S. Selberherr:
"Investigation of the Electron Mobility in Strained Si1-x Gex at High Ge Composition";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 2002-09-04 - 2002-09-06; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5; 29 - 32. https://doi.org/10.1109/SISPAD.2002.1034509

440.  J.M. Park, R. Klima, S. Selberherr:
"Lateral Trench Gate Super-Junction SOI-LDMOSFETs with Low On-Resistance";
Talk: European Solid-State Device Research Conference (ESSDERC), Florence; 2002-09-24 - 2002-09-26; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2002), ISBN: 88-900847-8-2; 283 - 286.

439.  R. Rodriguez-Torres, E. Gutierrez, A. Sarmiento, S. Selberherr:
"Macro-Modeling for MOS Device Simulation";
Talk: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Oranjestad; 2002-04-17 - 2002-04-19; in: "Proceedings of the ICCDCS 2002", D012 (2002), ISBN: 0-7803-7380-4; 1 - 5.

438.  T. Grasser, A. Gehring, S. Selberherr:
"Macroscopic Transport Models for Microelectronics Devices";
Talk: World Multiconference on Systemics, Cybernetics and Informatics (SCI), Orlando (invited); 2002-07-14 - 2002-07-18; in: "The 6th World Multiconference on Systemics, Cybernetics and Informatics", (2002), ISBN: 980-07-8150-1; 223 - 228.

437.  A. Gehring, T. Grasser, S. Selberherr:
"Non-Parabolicity and Non-Maxwellian Effects on Gate Oxide Tunneling";
Talk: International Conference on Modeling and Simulation of Microsystems (MSM), San Juan; 2002-04-21 - 2002-04-25; in: "Technical Proceedings of the Fifth International Conference on Modeling and Simulation of Microsystems", (2002), ISBN: 0-9708275-7-1; 560 - 563.

436.  C. Heitzinger, S. Selberherr, J. Fugger, O. Häberlen:
"On Increasing the Accuracy of Simulations of Deposition and Etching Processes Using Radiosity and the Level Set Method";
Talk: European Solid-State Device Research Conference (ESSDERC), Florence; 2002-09-24 - 2002-09-26; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2002), ISBN: 88-900847-8-2; 347 - 350.

435.  C. Heitzinger, S. Selberherr:
"On the Topography Simulation of Memory Cell Trenches for Semiconductor Manufacturing Deposition Processes Using the Level Set Method";
Talk: European Simulation Multiconference (ESM), Darmstadt; 2002-06-03 - 2002-06-05; in: "16th European Simulation Multiconference", (2002), ISBN: 90-77039-07-4; 653 - 660.

434.  C. Heitzinger, A. Sheikholeslami, S. Selberherr:
"Predictive Simulation of Etching and Deposition Processes Using the Level Set Method";
Poster: International Workshop on Challenges in Predictive Process Simulation (ChiPPS), Prague; 2002-10-13 - 2002-10-17; in: "ChiPPS-2002 Challenges in Predictive Process Simulation", (2002), 65 - 66.

433.  T. Grasser, A. Gehring, S. Selberherr:
"Recent Advances in Transport Modeling for Miniaturized CMOS Devices";
Talk: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Aruba (invited); 2002-04-17 - 2002-04-19; in: "Proceedings of the ICCDCS 2002", D027 (2002), ISBN: 0-7803-7380-4; 1 - 8.

432.  C. Heitzinger, J. Fugger, O. Häberlen, S. Selberherr:
"Simulation and Inverse Modeling of TEOS Deposition Processes Using a Fast Level Set Method";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 2002-09-04 - 2002-09-06; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5; 191 - 194. https://doi.org/10.1109/SISPAD.2002.1034549

431.  A. Gehring, F. Jimenez-Molinos, A. Palma, H. Kosina, S. Selberherr:
"Simulation of Non-Volatile Memory Cells by Accounting for Inelastic Trap-Assisted Tunneling Current";
Talk: Workshop on Ultimate Integration of Silicon (ULIS), München; 2002-03-07 - 2002-03-08; in: "3rd European Workshop on Ultimate Integration of Silicon", (2002), 15 - 18.

430.  M. Gritsch, H. Kosina, T. Grasser, S. Selberherr:
"Simulation of a "Well Tempered" SOI MOSFET using an Enhanced Hydrodynamic Transport Model";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 2002-09-04 - 2002-09-06; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5; 195 - 198. https://doi.org/10.1109/SISPAD.2002.1034550

429.  S. Wagner, V. Palankovski, T. Grasser, R. Schultheis, S. Selberherr:
"Small-Signal Analysis and Direct S-Parameter Extraction";
Talk: International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO), Manchester; 2002-11-18 - 2002-11-19; in: "The 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications", (2002), ISBN: 0-7803-7530-0; 50 - 55. https://doi.org/10.1109/EDMO.2002.1174929

428.  M. Nedjalkov, H. Kosina, S. Selberherr:
"Stochastic Interpretation of the Wigner Transport in Nanostructures";
Talk: International Conference on Low Dimensional Structures and Devices, Fortaleza-Ceara; 2002-12-08 - 2002-12-13; in: "Fourth International Conference on Low Dimensional Structures and Devices", (2002), 5.

427.  R. Klima, T. Grasser, S. Selberherr:
"The Control System of the Device Simulator MINIMOS-NT";
Talk: International Conference on Nanoelectronics and Electromagnetic Compatibility, Skiathos; 2002-09-25 - 2002-09-28; in: "Advances in Simulation, Systems Theory, and Systems Engineering", WSEAS Press, (2002), ISBN: 960-8052-70-x; 281 - 284.

426.  M. Gritsch, H. Kosina, T. Grasser, S. Selberherr, T. Linton, S. Singh, S. Yu, M. Giles:
"The Failure of the Hydrodynamic Transport Model for Simulation of Partially Depleted SOI MOSFETs and its Revision";
Talk: International Conference on Modeling and Simulation of Microsystems (MSM), San Juan; 2002-04-21 - 2002-04-25; in: "Technical Proceedings of the Fifth International Conference on Modeling and Simulation of Microsystems", (2002), ISBN: 0-9708275-7-1; 544 - 547.

425.  V. Palankovski, R. Klima, R. Schultheis, S. Selberherr:
"Three-Dimensional Analysis of Leakage Currents in III-V HBTs";
Talk: Gallium Arsenide Integrated Circuits Symposium (GaAs IC), Monterey; 2002-10-20 - 2002-10-23; in: "Proceedings of the Gallium Arsenide Integrated Circuit Symposium (GaAs IC)", (2002), ISBN: 0-7803-7447-9; 229 - 232. https://doi.org/10.1109/GAAS.2002.1049066

424.  R. Rodriguez-Torres, E. Gutierrez, R. Klima, S. Selberherr:
"Three-Dimensional Analysis of a MAGFET at 300 K and 77 K";
Talk: European Solid-State Device Research Conference (ESSDERC), Florence; 2002-09-24 - 2002-09-26; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2002), ISBN: 88-900847-8-2; 151 - 154.

423.  A. Gehring, H. Kosina, S. Selberherr:
"Transmission Coefficient Estimation for High-k Gate Stack Evaluation";
Talk: International Conference on Nanoelectronics and Electromagnetic Compatibility, Skiathos; 2002-09-25 - 2002-09-28; in: "Advances in Simulation, Systems Theory, and Systems Engineering", WSEAS Press, (2002), ISBN: 960-8052-70-x; 156 - 159.

422.  K. Dragosits, V. Palankovski, S. Selberherr:
"Two-Dimensional Modeling of Quantum Mechanical Effects in Ultra-Short CMOS Devices";
Talk: International Conference on Nanoelectronics and Electromagnetic Compatibility, Skiathos; 2002-09-25 - 2002-09-28; in: "Advances in Simulation, Systems Theory, and Systems Engineering", WSEAS Press, (2002), ISBN: 960-8052-70-x; 113 - 116.

421.  M. Nedjalkov, R. Kosik, H. Kosina, S. Selberherr:
"Wigner Transport through Tunneling Structures - Scattering Interpretation of the Potential Operator";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 2002-09-04 - 2002-09-06; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5; 187 - 190. https://doi.org/10.1109/SISPAD.2002.1034548

420.  C. Harlander, R. Sabelka, S. Selberherr:
"A Comparative Study of Two Numerical Techniques for Inductance Calculation in Interconnect Structures";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; 254 - 257. https://doi.org/10.1007/978-3-7091-6244-6_56

419.  V. Palankovski, N. Belova, T. Grasser, H. Puchner, S. Aronowitz, S. Selberherr:
"A Methodology for Deep Sub-Quartermicron CMOS Technology Characterization";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; 428 - 431. https://doi.org/10.1007/978-3-7091-6244-6_99

418.  T. Grasser, H. Kosina, M. Gritsch, S. Selberherr:
"A Physics-Based Impact Ionization Model Using Six Moments of the Boltzmann Transport Equation";
Talk: International Conference on Modeling and Simulation of Microsystems (MSM), Hilton Head Island; 2001-03-19 - 2001-03-21; in: "Technical Proceedings of the Fourth International Conference on Modeling and Simulation of Microsystems", (2001), ISBN: 0-9708275-0-4; 474 - 477.

417.  T. Binder, C. Heitzinger, S. Selberherr:
"A Qualitative Study on Global and Local Optimization Techniques for TCAD Analysis Tasks";
Talk: International Conference on Modeling and Simulation of Microsystems (MSM), Hilton Head Island; 2001-03-19 - 2001-03-21; in: "Technical Proceedings of the Fourth International Conference on Modeling and Simulation of Microsystems", (2001), ISBN: 0-9708275-0-4; 466 - 469.

416.  R. Quay, R. Schultheis, W. Kellner, V. Palankovski, S. Selberherr:
"A Review of Modeling Issues for RF Heterostructure Device Simulation";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; 432 - 435. https://doi.org/10.1007/978-3-7091-6244-6_100

415.  M. Gritsch, H. Kosina, T. Grasser, S. Selberherr:
"A Simulation Study of Partially Depleted SOI MOSFETs";
Talk: Symposium on Silicon-on-Insulator Technology and Devices, Washington; 2001-03-25 - 2001-03-29; in: "Proceedings Symp. on Silicon-on-Insulator Technology and Devices", (2001), ISBN: 1-56677-309-1; 181 - 186.

414.   Nedjalkov, M., Kosina, H., Kosik, R., Selberherr, S. (2001).
A Space Dependent Wigner Equation Including Phonon Interaction.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (p. 4), Urbana-Champaign, IL, USA. (reposiTUm)

413.  M. Nedjalkov, R. Kosik, H. Kosina, S. Selberherr:
"A Wigner Equation for the Nanometer and Femtosecond Transport Regime";
Talk: IEEE Conference on Nanotechnology (NANO), Maui; 2001-10-28 - 2001-10-30; in: "Proceedings of the IEEE Conference on Nanotechnology (NANO)", (2001), ISBN: 0-7803-7215-8; 277 - 281. https://doi.org/10.1109/NANO.2001.966433

412.  T. Grasser, H. Kosina, M. Gritsch, S. Selberherr, H. Puchner, S. Aronowitz:
"Accurate Simulation of Substrate Currents by Accounting for the Hot Electron Tail Population";
Talk: European Solid-State Device Research Conference (ESSDERC), Nürnberg; 2001-09-11 - 2001-09-13; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2001), ISBN: 2-914601-01-8; 215 - 218.

411.  A. Hössinger, T. Binder, W. Pyka, S. Selberherr:
"Advanced Hybrid Cellular Based Approach for Three-Dimensional Etching and Deposition Simulation";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; 424 - 427. https://doi.org/10.1007/978-3-7091-6244-6_98

410.  H. Kosina, M. Nedjalkov, S. Selberherr:
"An Event Bias Technique for Monte Carlo Device Simulation";
Talk: Seminar on Monte Carlo Methods (MCM), Salzburg; 2001-09-10 - 2001-09-14; in: "Program and Abstracts 3rd IMACS Seminar on Monte Carlo Methods", (2001), 141 - 143.

409.  T. Grasser, H. Kosina, S. Selberherr:
"An Impact Ionization Model Including Non-Maxwellian and Non-Parabolicity Effects";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; 46 - 49. https://doi.org/10.1007/978-3-7091-6244-6_10

408.   Kosina, H., Gritsch, M., Grasser, T., Linton, T., Yu, S., Giles, M., Selberherr, S. (2001).
An Improved Energy Transport Model Suitable for Simulation of Partially Depleted SOI MOSFETs.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (p. 67), Urbana-Champaign, IL, USA. (reposiTUm)

407.  K. Dragosits, Y. Ponomarev, C. Dachs, S. Selberherr:
"Analysis of Ultra Short MOSFETs with High-K Gate Dielectrics";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; 412 - 415. https://doi.org/10.1007/978-3-7091-6244-6_95

406.  A. Wolf, T. Grasser, S. Selberherr:
"Automatic Binding of SPICE Models to the Device/Circuit Simulator MINIMOS-NT";
Talk: European Simulation Multiconference (ESM), Prag; 2001-06-06 - 2001-06-09; in: "Proceedings European Simulation Multiconference ESM 2001", (2001), ISBN: 1-56555-225-3; 314 - 318.

405.  M. Nedjalkov, T. Grasser, H. Kosina, S. Selberherr:
"Boundary Condition Models for Terminal Current Fluctuations";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; 152 - 155. https://doi.org/10.1007/978-3-7091-6244-6_34

404.  R. Klima, T. Grasser, S. Selberherr:
"Controlling TCAD Applications with an Object-Oriented Dynamic Database";
Talk: European Simulation Multiconference (ESM), Prag; 2001-06-06 - 2001-06-09; in: "Proceedings European Simulation Multiconference ESM 2001", (2001), ISBN: 1-56555-225-3; 161 - 165.

403.  S. Selberherr:
"Current Transport Models for Engineering Applications";
Talk: Advanced Research Workshop on Future Trends in Microelectronics, Ile de Bendor; 2001-06-25 - 2001-06-29; in: "Abstracts Advanced Research Workshop on Future Trends in Microelectronics: The Nano Millenium", (2001), ISBN: 0-471-21247-4; 54.

402.  A. Gehring, T. Grasser, S. Selberherr:
"Design Optimization of Multi-Barrier Tunneling Devices Using the Transfer Matrix Method";
Poster: International Semiconductor Device Research Symposium (ISDRS), Washington; 2001-12-05 - 2001-12-07; in: "2001 International Semiconductor Device Research Symposium", (2001), 260 - 263.

401.  T.V. Gurov, M. Nedjalkov, P.A. Whitlock, H. Kosina, S. Selberherr:
"Femtosecond Relaxation of Hot Electrons by Phonon Emission in Presence of Electric Field";
Poster: International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS), Santa Fe; 2001-08-27 - 2001-08-31; in: "Proceedings 12th International Conference on Nonequilibrium Carrier Dynamics", (2001), 27.

400.  J. Cervenka, M. Knaipp, A. Hössinger, S. Selberherr:
"Green's Function Approach for Three-Dimensional Diffusion Simulation of Industrial High Voltage Applications";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; 408 - 411. https://doi.org/10.1007/978-3-7091-6244-6_94

399.  T. Grasser, H. Kosina, S. Selberherr:
"Hydrodynamic and Energy-Transport Models for Semiconductor Device Simulation";
Talk: International Conference on the Experience of Designing and Application of CAD Systems in Microelectronics, Lviv-Slavsko (invited); 2001-02-12 - 2001-02-17; in: "The Experience of Designing and Application of CAD Systems in Microelectronics", (2001), ISBN: 966-553-079-8; 19 - 30.

398.  T. Grasser, H. Kosina, S. Selberherr:
"Investigation of Spurious Velocity Overshoot Using Monte Carlo Data";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; 54 - 57. https://doi.org/10.1007/978-3-7091-6244-6_12

397.  T. Grasser, S. Selberherr:
"Limitations of Hydrodynamic and Energy-Transport Models";
Talk: International Workshop on Processes of Semiconductor Devices, Delhi (invited); 2001-12-11 - 2001-12-15; in: "Physics of Semiconductor Devices", V. Kumar, P.K. Basu (ed.); Allied Publishers Limited, (2001), ISBN: 81-7764-223-5; 584 - 591.

396.  W. Pyka, C. Heitzinger, N. Tamaoki, T. Takase, T. Ohmine, S. Selberherr:
"Monitoring Arsenic In-Situ Doping with Advanced Models for Poly-Silicon CVD";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; 124 - 127. https://doi.org/10.1007/978-3-7091-6244-6_27

395.  M. Nedjalkov, H. Kosina, S. Selberherr:
"Monte Carlo Algorithms for Stationary Device Simulation";
Talk: Seminar on Monte Carlo Methods (MCM), Salzburg; 2001-09-10 - 2001-09-14; in: "Program and Abstracts 3rd IMACS Seminar on Monte Carlo Methods", (2001), 58 - 59.

394.  H. Kosina, M. Nedjalkov, S. Selberherr:
"Monte Carlo Analysis of the Small-Signal Response of Charge Carriers";
Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol; 2001-06-06 - 2001-06-10; in: "Abstracts of the 3rd International Conference on Large-Scale Scientific Computations", (2001), A-23.

393.  J.M. Park, T. Grasser, H. Kosina, S. Selberherr:
"Numerical Study of Partial-SOI LDMOSFET Power Devices";
Poster: International Semiconductor Device Research Symposium (ISDRS), Washington; 2001-12-05 - 2001-12-07; in: "2001 International Semiconductor Device Research Symposium", (2001), 114 - 117.

392.  C. Heitzinger, S. Selberherr:
"Optimization for TCAD Purposes Using Bernstein Polynomials";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; 420 - 423. https://doi.org/10.1007/978-3-7091-6244-6_97

391.  V. Palankovski, G. Röhrer, E. Wachmann, J. Kraft, B. Löffler, J. Cervenka, R. Quay, T. Grasser, S. Selberherr:
"Optimization of High-Speed SiGe HBTs";
Talk: International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO), Wien; 2001-11-15 - 2001-11-16; in: "Proceedings Intl. Symposium on Electron Devices for Microwave and Optoelectronic Applications", (2001), ISBN: 0-7803-7049-x; 187 - 191. https://doi.org/10.1109/EDMO.2001.974305

390.  J. Cervenka, P. Fleischmann, S. Selberherr, M. Knaipp, F. Unterleitner:
"Optimization of Industrial High Voltage Structures by Three-Dimensional Diffusion Simulation";
Talk: European Solid-State Device Research Conference (ESSDERC), Nürnberg; 2001-09-11 - 2001-09-13; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2001), ISBN: 2-914601-01-8; 227 - 230.

389.  C. Heitzinger, T. Binder, S. Selberherr:
"Parallel TCAD Optimization and Parameter Extraction for Computationally Expensive Objective Functions";
Talk: European Simulation Multiconference (ESM), Prag; 2001-06-06 - 2001-06-09; in: "Proceedings European Simulation Multiconference ESM 2001", (2001), ISBN: 1-56555-225-3; 534 - 538.

388.  V. Palankovski, N. Belova, T. Grasser, H. Puchner, S. Aronowitz, S. Selberherr:
"Reliable Prediction of Deep Sub-Quartermicron CMOS Technology Performance";
Talk: IEEE Conference on Nanotechnology (NANO), Maui; 2001-10-28 - 2001-10-30; in: "Proceedings of the IEEE Conference on Nanotechnology (NANO)", (2001), ISBN: 0-7803-7215-8; 201 - 206. https://doi.org/10.1109/NANO.2001.966419

387.  M. Gritsch, H. Kosina, T. Grasser, S. Selberherr:
"Simulation of Partially Depleted SOI MOSFETs using an Improved Hydrodynamic Transport Model";
Talk: International Workshop on Processes of Semiconductor Devices, Delhi; 2001-12-11 - 2001-12-15; in: "Physics of Semiconductor Devices", V. Kumar, P.K. Basu (ed.); Allied Publishers Limited, (2001), ISBN: 81-7764-223-5; 664 - 667.

386.  A. Gehring, C. Heitzinger, T. Grasser, S. Selberherr:
"TCAD Analysis of Gain Cell Retention Time for SRAM Applications";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; 416 - 419. https://doi.org/10.1007/978-3-7091-6244-6_96

385.  T. Grasser, S. Selberherr:
"Technology CAD: Device Simulation and Characterization";
Talk: Ultra Shallow Junctions Conference, Napa (invited); 2001-04-22 - 2001-04-26; in: "Sixth International Workshop on the Fabrication, Characterization, and Modeling of Ultra Shallow Doping Profiles in Semiconductors", (2001), 4 - 11.

384.  C. Harlander, R. Sabelka, S. Selberherr:
"Three-Dimensional Electro-Thermal Simulation of Interconnect Structures with Temperature-Dependent Permittivity";
Talk: International Intersociety, Electronic Packaging Technical Conference (InterPACK), Kauai; 2001-07-08 - 2001-07-13; in: "The Pacific RIM/International Intersociety, Electronic Packaging Technical/Business Conference & Exhibition", (2001), 1 - 2.

383.  H. Kosina, M. Nedjalkov, S. Selberherr:
"Variance Reduction in Monte Carlo Device Simulation by Means of Event Biasing";
Talk: International Conference on Modeling and Simulation of Microsystems (MSM), Hilton Head Island; 2001-03-19 - 2001-03-21; in: "Technical Proceedings of the Fourth International Conference on Modeling and Simulation of Microsystems", (2001), ISBN: 0-9708275-0-4; 11 - 14.

382.  H. Kosina, M. Nedjalkov, S. Selberherr:
"Variance and Covariance Estimation in Stationary Monte Carlo Device Simulation";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2001), ISBN: 3-211-83708-6; 140 - 143. https://doi.org/10.1007/978-3-7091-6244-6_31

381.  M. Nedjalkov, H. Kosina, S. Selberherr, I. Dimov:
"A Backward Monte Carlo Method for Simulation of the Electron Quantum Kinetics in Semiconductors";
Poster: International Workshop on Computational Electronics (IWCE), Glasgow, UK; 2000-05-22 - 2000-05-25; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2000), ISBN: 0-85261-704-6; 144 - 145. https://doi.org/10.1109/IWCE.2000.869966

380.  T. Grasser, R. Quay, V. Palankovski, S. Selberherr:
"A Global Self-Heating Model for Device Simulation";
Talk: European Solid-State Device Research Conference (ESSDERC), Cork; 2000-09-11 - 2000-09-13; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2000), ISBN: 2-86332-248-6; 324 - 327. https://doi.org/10.1109/ESSDERC.2000.194780

379.  C. Troger, H. Kosina, S. Selberherr:
"A Stable Schrödinger-Poisson Solver to Investigate Quantum Effects in Modern MOSFETs";
Talk: Workshop on Ultimate Integration of Silicon (ULIS), Grenoble; 2000-01-20 - 2000-01-21; in: "European Workshop on Ultimate Integration of Silicon", (2000), 123 - 126.

378.  V. Palankovski, S. Selberherr, R. Quay, R. Schultheis:
"Analysis of HBT Behavior After Strong Electrothermal Stress";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Seattle, WA, USA; 2000-09-06 - 2000-09-08; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2000), ISBN: 0-7803-6279-9; 245 - 248. https://doi.org/10.1109/SISPAD.2000.871254

377.  M. Stockinger, S. Selberherr:
"Automatic Device Design Optimization with TCAD Frameworks";
Talk: International Conference on Modeling and Simulation of Microsystems (MSM), San Diego (invited); 2000-03-26 - 2000-03-29; in: "Proceedings Intl. Conf. on Modeling and Simulation of Microsystems", (2000), ISBN: 0-9666135-7-0; 1 - 6.

376.  R. Klima, T. Grasser, T. Binder, S. Selberherr:
"Controlling TCAD Applications with a Dynamic Database";
Talk: International Conference on Software Engineering and Applications (SEA), Las Vegas; 2000-11-06 - 2000-11-09; in: "Proceedings of the IASTED Intl. Conf. on Software Engineering and Applications", (2000), ISBN: 0-88986-306-7; 103 - 112.

375.  V. Palankovski, R. Schultheis, A. Bonacina, S. Selberherr:
"Effectiveness of Silicon Nitride Passivation in III-V Based HBTs";
Poster: International Conference on Defects in Insulating Materials, Johannesburg; 2000-04-03 - 2000-04-07; in: "Abstracts Intl. Conf. on Defects in Insulating Materials", (2000), 188.

374.  T. Grasser, S. Selberherr:
"Electro-Thermal Effects in Mixed-Mode Device Simulation";
Talk: International Semiconductor Conference (CAS), Sinaia (invited); 2000-10-10 - 2000-10-14; in: "Proceedings CAS 2000 Conference", (2000), ISBN: 0-7803-5885-6; 43 - 52.

373.   Heitzinger, C., Selberherr, S. (2000).
Extensible TCAD Optimization Framework Combining Gradient-Based and Genetic Optimizers.
In Design, Modeling, and Simulation in Microelectronics (pp. 279–289), Singapur, Singapore. https://doi.org/10.1117/12.405424 (reposiTUm)

372.  V. Palankovski, S. Selberherr:
"III-V Semiconductor Materials in MINIMOS-NT";
Poster: Materials Research Society Spring Meeting (MRS), San Francisco; 2000-04-24 - 2000-04-28; in: "Abstracts MRS Spring Meeting", (2000), 249.

371.  W. Pyka, S. Selberherr, V. Sukharev:
"Incorporation of Equipment Simulation into Integrated Feature Scale Profile Evolution";
Talk: European Solid-State Device Research Conference (ESSDERC), Cork; 2000-09-11 - 2000-09-13; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2000), ISBN: 2-86332-248-6; 180 - 183.

370.  C. Harlander, R. Sabelka, S. Selberherr:
"Inductance Calculation in Interconnect Structures";
Talk: International Conference on Modeling and Simulation of Microsystems (MSM), San Diego; 2000-03-26 - 2000-03-29; in: "Proceedings Intl. Conf. on Modeling and Simulation of Microsystems", (2000), ISBN: 0-9666135-7-0; 416 - 419.

369.  V. Palankovski, R. Quay, S. Selberherr:
"Industrial Application of Heterostructure Device Simulation";
Talk: Gallium Arsenide Integrated Circuits Symposium (GaAs IC), Seattle (invited); 2000-11-05 - 2000-11-08; in: "Proceedings of the Gallium Arsenide Integrated Circuit Symposium (GaAs IC)", (2000), ISBN: 0-7803-5968-2; 117 - 120. https://doi.org/10.1109/GAAS.2000.906305

368.  M. Gritsch, H. Kosina, C. Fischer, S. Selberherr:
"Influence of Generation/Recombination Effects in Simulations of Partially Depleted SOI MOSFETs";
Talk: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Granada; 2000-10-25 - 2000-10-27; in: "Proceedings EUROSOI 2000", (2000), 1 - 4.

367.  V. Palankovski, R. Schultheis, A. Bonacina, S. Selberherr:
"Investigations on the Impact of the InGaP Ledge on HBT-Performance";
Talk: Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Aegean See; 2000-05-29 - 2000-06-02; in: "Proceedings Workshop on Compound Semiconductor Devices and Integrated Circuits", (2000), ISBN: 0-9703111-0-9; 5 - 6.

366.  T. Grasser, S. Selberherr:
"Mixed-Mode Device Simulation";
Talk: International Conference on Microelectronics (MIEL), Nis (invited); 2000-05-14 - 2000-05-17; in: "Proceedings of the International Conference on Microelectronics (MIEL)", (2000), ISBN: 0-7803-5235-1; 35 - 42. https://doi.org/10.1109/ICMEL.2000.840528

365.  T. Binder, S. Selberherr:
"Object-Oriented Design Patterns for Process Flow Simulations";
Talk: International Conference on Software Engineering and Applications (SEA), Las Vegas; 2000-11-06 - 2000-11-09; in: "Proceedings of the IASTED Intl. Conf. on Software Engineering and Applications", (2000), ISBN: 0-88986-306-7; 159 - 166.

364.  T. Binder, S. Selberherr:
"Object-Oriented Wafer-State Services";
Talk: European Simulation Multiconference (ESM), Ghent; 2000-05-23 - 2000-05-26; in: "Proceedings European Simulation Multiconference ESM 2000", (2000), ISBN: 1-56555-204-0; 360 - 364.

363.  R. Sabelka, C. Harlander, S. Selberherr:
"Propagation of RF Signals in Microelectronic Structures";
Talk: International Workshop on Challenges in Predictive Process Simulation (ChiPPS), Wandlitz (invited); 2000-05-14 - 2000-05-18; in: "Abstracts Challenges in Predictive Process Simulation Meeting", (2000), 50 - 51.

362.  K. Dragosits, S. Selberherr:
"Simulation of Ferroelectric Materials with MINIMOS-NT";
Poster: Materials Research Society Spring Meeting (MRS), San Francisco; 2000-04-24 - 2000-04-28; in: "Abstracts MRS Spring Meeting", (2000), 249.

361.  K. Dragosits, S. Selberherr:
"Simulation of Ferroelectric Nonvolatile Memory Cells with MINIMOS-NT";
Talk: International Conference on Micro Materials, Berlin; 2000-05-17 - 2000-05-19; in: "Proceedings of the 3rd Intl. Micro Materials Conference", DDP Goldenbogen, (2000), ISBN: 3-932434-15-3; 1023 - 1026.

360.  K. Dragosits, S. Selberherr:
"Simulation of Ferroelectric Thin Films";
Poster: International Conference on Defects in Insulating Materials, Johannesburg; 2000-04-03 - 2000-04-07; in: "Abstracts Intl. Conf. on Defects in Insulating Materials", (2000), 179.

359.  R. Quay, H. Massler, W. Kellner, T. Grasser, V. Palankovski, S. Selberherr:
"Simulation of Gallium-Arsenide Based High Electron Mobility Transistors";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Seattle, WA, USA; 2000-09-06 - 2000-09-08; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2000), ISBN: 0-7803-6279-9; 74 - 77. https://doi.org/10.1109/SISPAD.2000.871210

358.  R. Quay, V. Palankovski, M. Chertouk, A. Leuther, S. Selberherr:
"Simulation of InAlAs/InGaAs High Electron Mobility Transistors with a Single Set of Physical Parameters";
Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 2000-12-10 - 2000-12-13; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2000), ISBN: 0-7803-6438-4; 186 - 189. https://doi.org/10.1109/IEDM.2000.904289

357.  V. Palankovski, T. Grasser, M. Knaipp, S. Selberherr:
"Simulation of Polysilicon Emitter Bipolar Transistors";
Poster: European Solid-State Device Research Conference (ESSDERC), Cork; 2000-09-11 - 2000-09-13; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2000), ISBN: 2-86332-248-6; 608 - 611. https://doi.org/10.1109/ESSDERC.2000.194851

356.  V. Palankovski, S. Selberherr:
"State-of-the-art Micro Materials Models in MINIMOS-NT";
Talk: International Conference on Micro Materials, Berlin; 2000-05-17 - 2000-05-19; in: "Proceedings of the 3rd Intl. Micro Materials Conference", DDP Goldenbogen, Dresden (2000), ISBN: 3-932434-15-3; 714 - 717.

355.  R. Sabelka, C. Harlander, S. Selberherr:
"The State of the Art in Interconnect Simulation";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Seattle, WA, USA (invited); 2000-09-06 - 2000-09-08; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2000), ISBN: 0-7803-6279-9; 6 - 11. https://doi.org/10.1109/SISPAD.2000.871194

354.  K. Dragosits, R. Hagenbeck, S. Selberherr:
"Transient Simulation of Ferroelectric Hysteresis";
Talk: International Conference on Modeling and Simulation of Microsystems (MSM), San Diego; 2000-03-26 - 2000-03-29; in: "Proceedings Intl. Conf. on Modeling and Simulation of Microsystems", (2000), ISBN: 0-9666135-7-0; 433 - 436.

353.  K. Dragosits, R. Kosik, S. Selberherr:
"Two-Dimensional Simulation of Ferroelectric Materials";
Talk: International Symposium on Integrated Ferroelectrics (ISIF), Aachen; 2000-03-12 - 2000-03-15; in: "Abstracts Intl. Symposium on Integrated Ferroelectrics", (2000), 128.

352.  A. Burenkov, K. Tietzel, A. Hössinger, J. Lorenz, H. Ryssel, S. Selberherr:
"A Computationally Efficient Method for Three-Dimensional Simulation of Ion Implantation";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1999), ISBN: 4-930813-98-0; 55 - 58. https://doi.org/10.1109/SISPAD.1999.799258

351.  V. Palankovski, B. Gonzalez, H. Kosina, A. Hernandez, S. Selberherr:
"A New Analytical Energy Relaxation Time Model for Device Simulation";
Talk: International Conference on Modeling and Simulation of Microsystems (MSM), San Juan; 1999-04-19 - 1999-04-21; in: "Proceedings Intl. Conf. on Modeling and Simulation of Microsystems", (1999), ISBN: 0-9666135-4-6; 395 - 398.

350.  T. Binder, S. Selberherr:
"A Parallel Finite Oct-Tree for Multi-Threaded Insert, Delete, and Search Operations";
Talk: International Conference on Applied Modelling and Simulation, Cairns; 1999-09-01 - 1999-09-03; in: "Proceedings Intl. Conf. on Applied Modelling and Simulation", (1999), ISBN: 0-88986-259-1; 613 - 616.

349.  V. Palankovski, R. Strasser, H. Kosina, S. Selberherr:
"A Systematic Approach for Model Extraction for Device Simulation Application";
Talk: International Conference on Applied Modelling and Simulation, Cairns; 1999-09-01 - 1999-09-03; in: "Proceedings Intl. Conf. on Applied Modelling and Simulation", (1999), ISBN: 0-88986-259-1; 463 - 466.

348.  R. Quay, C. Moglestue, V. Palankovski, S. Selberherr:
"A Temperature Dependent Model for the Saturation Velocity in Semiconductor Materials";
Talk: Materials Research Society Spring Meeting (MRS), Strasbourg; 1999-06-01 - 1999-06-04; in: "Abstracts E-MRS Spring Meeting", (1999), L-7.

347.  M. Radi, S. Selberherr:
"AMIGOS - A Rapid Prototyping System";
Talk: International Conference on Applied Informatics, Innsbruck; 1999-02-15 - 1999-02-18; in: "Proceedings IASTED Intl. Conf. on Applied Informatics", (1999), ISBN: 0-88986-241-9; 372 - 374.

346.  A. Hössinger, S. Selberherr:
"Accurate Three-Dimensional Simulation of Damage Caused by Ion Implantation";
Talk: International Conference on Modeling and Simulation of Microsystems (MSM), San Juan; 1999-04-19 - 1999-04-21; in: "Proceedings Intl. Conf. on Modeling and Simulation of Microsystems", (1999), ISBN: 0-9666135-4-6; 363 - 366.

345.  S. Selberherr:
"Aktuelle Entwicklungen der Mikroelektronik";
Talk: Informationstagung Mikroelektronik (ME), Wien (invited); 1999-09-29 - 1999-09-30; in: "Proceedings Mikroelektronik, Elektrotechnik und Informationstechnik 1999", 116 (1999), 485 - 490. https://doi.org/10.1007/BF03158944

344.  B. Gonzalez, V. Palankovski, H. Kosina, A. Hernandez, S. Selberherr:
"An Analytical Model for the Electron Energy Relaxation Time";
Talk: Conference De Dispositivos Electronicos, Madrid; 1999-06-10 - 1999-06-11; in: "Proceedings Conf. De Dispositivos Electronicos", (1999), ISBN: 84-00-07819-5; 263 - 266.

343.  B. Gonzalez, V. Palankovski, H. Kosina, A. Hernandez, S. Selberherr:
"An Energy Relaxation Time Model for Device Simulation";
Talk: International Conference on Modelling and Simulation, Philadelphia; 1999-05-05 - 1999-05-08; in: "Proceedings IASTED Intl. Conf. on Modelling and Simulation", (1999), ISBN: 0-88986-247-8; 367 - 370.

342.  M. Stockinger, S. Selberherr:
"Closed-Loop CMOS Gate Delay Time Optimization";
Talk: European Solid-State Device Research Conference (ESSDERC), Leuven; 1999-09-13 - 1999-09-15; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1999), ISBN: 2-86332-245-1; 504 - 507.

341.  M. Stockinger, R. Strasser, R. Plasun, A. Wild, S. Selberherr:
"Closed-Loop MOSFET Doping Profile Optimization for Portable Systems";
Talk: International Conference on Modeling and Simulation of Microsystems (MSM), San Juan; 1999-04-19 - 1999-04-21; in: "Proceedings Intl. Conf. on Modeling and Simulation of Microsystems", (1999), ISBN: 0-9666135-4-6; 411 - 413.

340.  B. Haindl, R. Kosik, P. Fleischmann, S. Selberherr:
"Comparison of Finite Element and Finite Box Discretization for Three-Dimensional Diffusion Modeling Using AMIGOS";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1999), ISBN: 4-930813-98-0; 131 - 134. https://doi.org/10.1109/SISPAD.1999.799278

339.  T. Grasser, H. Kosina, S. Selberherr:
"Consistent Comparison of Drift-Diffusion and Hydro-Dynamic Device Simulations";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1999), ISBN: 4-930813-98-0; 151 - 154. https://doi.org/10.1109/SISPAD.1999.799283

338.  R. Quay, V. Palankovski, R. Reuter, M. Schlechtweg, W. Kellner, S. Selberherr:
"III/V Device Optimization by Physics Based S-Parameter Simulation";
Talk: International Symposium on Compound Semiconductors (ISCS), Berlin; 1999-08-22 - 1999-08-26; in: "Proceedings Intl. Symposium on Compound Semiconductors", (1999), ISBN: 0-7503-0704-8; 325 - 328.

337.  R. Strasser, R. Plasun, M. Stockinger, S. Selberherr:
"Inverse Modeling of Semiconductor Devices";
Talk: Conference on Optimization, Atlanta; 1999-05-10 - 1999-05-12; in: "Abstracts SIAM Conf. on Optimization", (1999), 77.

336.  P. Fleischmann, B. Haindl, R. Kosik, S. Selberherr:
"Investigation of a Mesh Criterion for Three-Dimensional Finite Element Diffusion Simulation";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1999), ISBN: 4-930813-98-0; 71 - 74. https://doi.org/10.1109/SISPAD.1999.799262

335.  W. Pyka, P. Fleischmann, B. Haindl, S. Selberherr:
"Linking Three-Dimensional Topography Simulation with High Pressure CVD Reaction Kinetics";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1999), ISBN: 4-930813-98-0; 199 - 202. https://doi.org/10.1109/SISPAD.1999.799295

334.  M. Nedjalkov, H. Kosina, S. Selberherr:
"Monte-Carlo Method for Direct Computation of the Small Signal Kinetic Coefficients";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1999), ISBN: 4-930813-98-0; 155 - 158. https://doi.org/10.1109/SISPAD.1999.799284

333.  K. Dragosits, S. Selberherr:
"Numerical Aspects of the Simulation of Two-Dimensional Ferroelectric Hysteresis";
Talk: International Conference on Modeling and Simulation of Microsystems (MSM), San Juan; 1999-04-19 - 1999-04-21; in: "Proceedings Intl. Conf. on Modeling and Simulation of Microsystems", (1999), ISBN: 0-9666135-4-6; 309 - 312.

332.  A. Hössinger, M. Radi, B. Scholz, T. Fahringer, E. Langer, S. Selberherr:
"Parallelization of a Monte-Carlo Ion Implantation Simulator for Three-Dimensional Crystalline Structures";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1999), ISBN: 4-930813-98-0; 103 - 106. https://doi.org/10.1109/SISPAD.1999.799271

331.  A. Hössinger, E. Langer, S. Selberherr:
"Performance Optimization of a Parallelized Three-Dimensional Monte-Carlo Ion Implantation Simulator";
Talk: European Simulation Symposium (ESS), Erlangen; 1999-10-26 - 1999-10-28; in: "Proceedings European Simulation Symposium", (1999), ISBN: 1-56555-177-x; 649 - 651.

330.  R. Strasser, R. Plasun, S. Selberherr:
"Practical Inverse Modeling with SIESTA";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1999), ISBN: 4-930813-98-0; 91 - 94. https://doi.org/10.1109/SISPAD.1999.799268

329.  V. Palankovski, R. Quay, S. Selberherr, R. Schultheis:
"S-Parameter Simulation of HBTs on Gallium-Arsenide";
Talk: International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO), London; 1999-11-22 - 1999-11-23; in: "Proceedings High Performance Electron Devices for Microwave and Optoelectronic Applications EDMO", (1999), ISBN: 0-7803-5298-x; 15 - 19. https://doi.org/10.1109/EDMO.1999.821087

328.  P. Fleischmann, R. Kosik, B. Haindl, S. Selberherr:
"Simple Mesh Examples to Illustrate Specific Finite Element Mesh Requirements";
Talk: International Meshing Roundtable, South Lake Tahoe; 1999-10-10 - 1999-10-13; in: "Proceedings 8th Intl. Meshing Roundtable", (1999), 241 - 246.

327.  V. Palankovski, S. Selberherr, R. Schultheis:
"Simulation of Heterojunction Bipolar Transistors on Gallium-Arsenide";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1999), ISBN: 4-930813-98-0; 227 - 230. https://doi.org/10.1109/SISPAD.1999.799302

326.  V. Palankovski, S. Selberherr:
"Thermal Models for Semiconductor Device Simulation";
Talk: Conference on High Temperature Electronics (HITEN), Berlin; 1999-07-04 - 1999-07-07; in: "Proceedings European Conf. on High Temperature Electronics HITEN", (1999), ISBN: 0-7803-5795-7; 25 - 28. https://doi.org/10.1109/HITEN.1999.827343

325.  R. Quay, R. Reuter, T. Grasser, S. Selberherr:
"Thermal Simulations of III/V HEMTs";
Talk: International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO), London; 1999-11-22 - 1999-11-23; in: "Proceedings High Performance Electron Devices for Microwave and Optoelectronic Applications", (1999), ISBN: 0-7803-5298-x; 87 - 92.

324.  A. Hössinger, S. Selberherr, M. Kimura, I. Nomachi, S. Kusanagi:
"Three-Dimensional Monte-Carlo Ion Implantation Simulation for Molecular Ions";
Talk: Symposium on Process Physics and Modeling in Semiconductor Technology, Seattle; 1999-05-05 - 1999-05-06; in: "Proceedings Symp. on Process Physics and Modeling in Semiconductor Technology", Electrochemical Society, 99-2 (1999), ISBN: 1-56677-224-9; 18 - 25.

323.  W. Pyka, H. Kirchauer, S. Selberherr:
"Three-Dimensional Resist Development Simulation - Benchmarks and Integration with Lithography";
Talk: Micro- and Nano-Engineering Conference, Rom; 1999-09-21 - 1999-09-23; in: "Abstracts Micro-and-Nano-Engineering 99 Conf.", (1999), 305 - 306.

322.  C. Harlander, R. Sabelka, R. Minixhofer, S. Selberherr:
"Three-Dimensional Transient Electro-Thermal Simulation";
Talk: Workshop on Thermal Investigations of ICs and Systems (THERMINIC), Rome; 1999-10-03 - 1999-10-06; in: "Proceedings THERMINIC Workshop", (1999), 169 - 172.

321.  R. Martins, S. Selberherr, F. Vaz:
"A CMOS IC for Portable EEG Acquisition Systems";
Talk: Instrumentation and Measurement Technology Conference, St. Paul; 1998-05-18 - 1998-05-21; in: "Proceedings Instrumentation and Measurement Technology Conf.", (1998), ISBN: 0-7803-4797-8; 1406 - 1410.

320.  V. Palankovski, G. Kaiblinger-Grujin, H. Kosina, S. Selberherr:
"A Dopant-Dependent Band Gap Narrowing Model Application for Bipolar Device Simulation";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4; 105 - 108. https://doi.org/10.1007/978-3-7091-6827-1_29

319.  G. Kaiblinger-Grujin, T. Grasser, S. Selberherr:
"A Physically-Based Electron Mobility Model for Silicon Device Simulation";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4; 312 - 315. https://doi.org/10.1007/978-3-7091-6827-1_78

318.  M. Stockinger, R. Strasser, R. Plasun, A. Wild, S. Selberherr:
"A Qualitative Study on Optimized MOSFET Doping Profiles";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4; 77 - 80. https://doi.org/10.1007/978-3-7091-6827-1_22

317.   Kirchauer, H., Selberherr, S. (1998).
A Three-Dimensional Photolithography Simulator Including Rigorous Nonplanar Exposure Simulation for Off-Axis Illumination.
In Proceedings of SPIE Optical Microlithography (p. 3334·86), Santa Clara, CA, USA. (reposiTUm)

316.  G. Kaiblinger-Grujin, H. Kosina, S. Selberherr:
"A Universal Low-Field Electron Mobility Model for Semiconductor Device Simulation";
Poster: International Conference on Modeling and Simulation of Microsystems (MSM), Santa Clara; 1998-05-06 - 1998-05-08; in: "Proceedings Intl. Conf. on Modeling and Simulation of Microsystems", (1998), ISBN: 0-9666135-0-3; M2.4.1.

315.  R. Sabelka, R. Martins, S. Selberherr:
"Accurate Layout-Based Interconnect Analysis";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", Springer, (1998), ISBN: 3-211-83208-4; 336 - 339. https://doi.org/10.1007/978-3-7091-6827-1_84

314.  E. Langer, S. Selberherr:
"Advanced Models, Applications, and Software Systems for High Performance Computing - Applications in Microelectronics";
Talk: Tagung des Forschungsverbund für technisch-wissenschaftliches Hochleistungsrechnen (FORTWIHR), München (invited); 1998-03-16 - 1998-03-18; in: "Abstracts Intl. FORTHWIHR Conf.", (1998), 1.

313.  M. Rottinger, N. Seifert, S. Selberherr:
"Analysis of AVC Measurements";
Talk: European Solid-State Device Research Conference (ESSDERC), Bordeaux; 1998-09-07 - 1998-09-09; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1998), ISBN: 2-86332-234-6; 344 - 347.

312.  T. Grasser, R. Strasser, M. Knaipp, K. Tsuneno, H. Masuda, S. Selberherr:
"Calibration of a Mobility Model for Quartermicron CMOS Devices";
Poster: European Simulation Multiconference (ESM), Manchester; 1998-06-16 - 1998-06-19; in: "Proceedings European Simulation Multiconference", (1998), ISBN: 1-56555-148-6; 75 - 77.

311.  T. Grasser, R. Strasser, M. Knaipp, K. Tsuneno, H. Masuda, S. Selberherr:
"Device Simulator Calibration for Quartermicron CMOS Devices";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4; 93 - 96. https://doi.org/10.1007/978-3-7091-6827-1_26

310.  W. Pyka, R. Martins, S. Selberherr:
"Efficient Algorithms for Three-Dimensional Etching and Deposition Simulation";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4; 16 - 19. https://doi.org/10.1007/978-3-7091-6827-1_5

309.  T. Grasser, V. Palankovski, G. Schrom, S. Selberherr:
"Hydrodynamic Mixed-Mode Simulation";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4; 247 - 250. https://doi.org/10.1007/978-3-7091-6827-1_62

308.  V. Palankovski, G. Kaiblinger-Grujin, S. Selberherr:
"Implications of Dopant-Dependent Low-Field Mobility and Band Gap Narrowing on the Bipolar Device Performance";
Talk: European Workshop on Low Temperature Electronics (WOLTE), San Miniato; 1998-06-24 - 1998-06-26; in: "Proceedings European Workshop on Low Temperature Electronics 3", L. Brogiato, D.V. Camin, G. Pessina (ed.); Journal de Physique IV, 8 (1998), 91 - 94. https://doi.org/10.1051/jp4:1998321

307.  V. Palankovski, M. Knaipp, S. Selberherr:
"Influence of the Material Composition and Doping Profiles on HBTs Device Performance";
Talk: International Conference on Modelling and Simulation, Pittsburgh; 1998-05-13 - 1998-05-16; in: "Proceedings IASTED Intl. Conf. on Modelling and Simulation", (1998), ISBN: 0-88986-252-4; 7 - 10.

306.  T. Grasser, S. Selberherr, K. Tsueno, H. Masuda:
"Mobility Parameter Tuning for Device Simulation";
Talk: European Solid-State Device Research Conference (ESSDERC), Bordeaux; 1998-09-07 - 1998-09-09; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1998), ISBN: 2-86332-234-6; 336 - 339.

305.  R. Martins, W. Pyka, R. Sabelka, S. Selberherr:
"Modeling Integrated Circuit Interconnections";
Talk: International Conference on Microelectronics and Packaging, Curitiba; 1998-08-10 - 1998-08-14; in: "Proceedings XIII SBMicro, Intl. Conf. on Microelectronics and Packaging", (1998), 144 - 151.

304.  R. Mlekus, S. Selberherr:
"Object-Oriented Algorithm and Model Management";
Talk: International Conference on Applied Modelling and Simulation, Honolulu; 1998-08-12 - 1998-08-14; in: "Proceedings IASTED Intl. Conf. on Applied Modelling and Simulation", (1998), ISBN: 0-88986-270-2; 437 - 441.

303.  P. Fleischmann, E. Leitner, S. Selberherr:
"Optimized Geometry Preprocessing for Three-Dimensional Semiconductor Process Simulation";
Talk: International Conference on Applied Modelling and Simulation, Honolulu; 1998-08-12 - 1998-08-14; in: "Proceedings IASTED Intl. Conf. on Applied Modelling and Simulation", (1998), ISBN: 0-88986-270-2; 317 - 321.

302.  R. Strasser, R. Plasun, S. Selberherr:
"Parallel and Distributed Optimization in Technology Computer Aided Design";
Poster: European Simulation Multiconference (ESM), Manchester; 1998-06-16 - 1998-06-19; in: "Proceedings European Simulation Multiconference", (1998), ISBN: 1-56555-148-6; 78 - 80.

301.   Strasser, R., Selberherr, S. (1998).
Parallel and Distributed TCAD Simulations Using Dynamic Load Balancing.
In Simulation of Semiconductor Processes and Devices 1998 (pp. 89–92), Leuven, Belgium. https://doi.org/10.1007/978-3-7091-6827-1_25 (reposiTUm)

300.  R. Martins, R. Sabelka, W. Pyka, S. Selberherr:
"Rigorous Capacitance Simulation of DRAM Cells";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4; 69 - 72. https://doi.org/10.1007/978-3-7091-6827-1_20

299.  R. Quay, R. Reuter, V. Palankovski, S. Selberherr:
"S-Parameter Simulation of RF-HEMTs";
Talk: International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO), Manchester; 1998-11-24; in: "Proceedings High Performance Electron Devices for Microwave and Optoelectronic Applications EDMO 98", (1998), ISBN: 0-7803-4333-6; 13 - 18.

298.  R. Sabelka, S. Selberherr:
"SAP - A Program Package for Three-Dimensional Interconnect Simulation";
Poster: IEEE International Interconnect Technology Conference (IITC), San Francisco; 1998-06-01 - 1998-06-03; in: "Proceedings Intl. Interconnect Technology Conf.", (1998), ISBN: 0-7803-4286-0; 250 - 252.

297.  V. Palankovski, T. Grasser, S. Selberherr:
"SiGe HBT in Mixed-Mode Device and Circuit Simulation";
Talk: Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Zeuthen; 1998-05-24 - 1998-05-27; in: "Proceedings Workshop on Compound Semiconductor Devices and Integrated Circuits", (1998), 145 - 156.

296.  R. Plasun, M. Stockinger, R. Strasser, S. Selberherr:
"Simulation Based Optimization Environment and it's Application to Semiconductor Devices";
Talk: International Conference on Applied Modelling and Simulation, Honolulu; 1998-08-12 - 1998-08-14; in: "Proceedings IASTED Intl. Conf. on Applied Modelling and Simulation", (1998), ISBN: 0-88986-270-2; 313 - 316.

295.  M. Rottinger, N. Seifert, S. Selberherr:
"Simulation of AVC Measurements";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4; 284 - 287. https://doi.org/10.1007/978-3-7091-6827-1_72

294.  C. Wasshuber, H. Kosina, S. Selberherr:
"Single-Electron Memories with Terabit Capacity";
Poster: Advanced Research Workshop on Future Trends in Microelectronics, Ile des Embiez (invited); 1998-05-31 - 1998-06-05; in: "Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Off the Beaten Path", (1998), P-Th-17.

293.  V. Palankovski, G. Kaiblinger-Grujin, S. Selberherr:
"Study of Dopant-Dependent Band Gap Narrowing in Compound Semiconductor Devices";
Poster: International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technology, Cardiff; 1998-06-21 - 1998-06-24; in: "Abstracts Intl. Workshop on Expert Evaluation & Control of Compound Semicond. Mat. & Technology", PSA, (1998), 15.

292.  M. Radi, S. Selberherr:
"Three-Dimensional Adaptive Mesh Relaxation";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4; 193 - 196. https://doi.org/10.1007/978-3-7091-6827-1_49

291.  W. Pyka, S. Selberherr:
"Three-Dimensional Simulation of Bulge Formation in Contact Hole Metalization";
Poster: International Conference on Modeling and Simulation of Microsystems (MSM), Santa Clara; 1998-05-06 - 1998-05-08; in: "Proceedings Intl. Conf. on Modeling and Simulation of Microsystems", (1998), ISBN: 0-9666135-0-3; T4.3.3.

290.  W. Pyka, S. Selberherr:
"Three-Dimensional Simulation of TiN Magnetron Sputter Deposition";
Talk: European Solid-State Device Research Conference (ESSDERC), Bordeaux; 1998-09-07 - 1998-09-09; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1998), ISBN: 2-86332-234-6; 324 - 327.

289.  K. Dragosits, M. Knaipp, S. Selberherr:
"Two-Dimensional Simulation of Ferroelectric Memory Cells";
Talk: International Conference on Electronic Materials, Cheju; 1998-08-24 - 1998-08-27; in: "Abstracts Intl. Conf. on Electronic Materials", (1998), 40.

288.  K. Dragosits, M. Knaipp, S. Selberherr:
"Two-Dimensional Simulation of Ferroelectric Nonvolatile Memory Cells";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1998), ISBN: 3-211-83208-4; 368 - 371. https://doi.org/10.1007/978-3-7091-6827-1_91

287.  C. Troger, H. Kosina, S. Selberherr:
"A Consistent Inclusion of Nonparabolicity in a Schrödinger-Poisson Solver for Silicon Inversion Layers";
Talk: International Conference on Computational Physics, Singapore; 1997-06-02 - 1997-06-04; in: "Abstracts Intl. Conf. on Computational Physics", (1997), 26 - 27.

286.  T. Simlinger, M. Rottinger, S. Selberherr:
"A Method for Unified Treatment of Interface Conditions Suitable for Device Simulation";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1997), ISBN: 0-7803-3775-1; 173 - 176. https://doi.org/10.1109/SISPAD.1997.621365

285.  H. Kosina, G. Kaiblinger-Grujin, S. Selberherr:
"A New Approach to Ionized-Impurity Scattering";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1997), ISBN: 0-7803-3775-1; 205 - 208. https://doi.org/10.1109/SISPAD.1997.621373

284.  M. Radi, E. Leitner, E. Hollensteiner, S. Selberherr:
"A Novel Diffusion Coupled Oxidation Model";
Talk: European Solid-State Device Research Conference (ESSDERC), Stuttgart; 1997-09-22 - 1997-09-24; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1997), ISBN: 2-86332-221-4; 472 - 475.

283.  M. Knaipp, T. Grasser, S. Selberherr:
"A Physically Based Substrate Current Simulation";
Poster: European Solid-State Device Research Conference (ESSDERC), Stuttgart; 1997-09-22 - 1997-09-24; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1997), ISBN: 2-86332-221-4; 196 - 199.

282.  M. Radi, E. Leitner, E. Hollensteiner, S. Selberherr:
"AMIGOS: Analytical Model Interface & General Object-Oriented Solver";
Talk: Grundlagen und Technologie elektronischer Bauelemente, Großarl; 1997-03-19 - 1997-03-22; in: "Proceedings Seminar Basics and Technology of Electronic Devices", (1997), ISBN: 3-901578-02-1; 57 - 60.

281.  R. Mlekus, S. Selberherr:
"An Object-Oriented Approach to the Management of Models";
Talk: Grundlagen und Technologie elektronischer Bauelemente, Großarl; 1997-03-19 - 1997-03-22; in: "Proceedings Seminar Basics and Technology of Electronic Devices", (1997), ISBN: 3-901578-02-1; 53 - 56.

280.  M. Radi, E. Leitner, E. Hollensteiner, S. Selberherr:
"Analytical Partial Differential Equation Modeling Using AMIGOS";
Talk: International Conference on Artificial Intelligence and Soft Computing, Banff; 1997-07-27 - 1997-08-01; in: "Proceedings IASTED Intl. Conf. on Artificial Intelligence and Soft Computing", (1997), ISBN: 0-88986-229-x; 423 - 426.

279.  C. Köpf, H. Kosina, S. Selberherr:
"Anisotropic Electron Transport in Lattice-Mismatch-Strained GaInAs Alloys";
Poster: Condensed Matter Physics Meeting, Pakota Island; 1997-02-04 - 1997-02-07; in: "Abstracts 21. Condensed Matter Physics Meeting", (1997), TP21.

278.  G. Kaiblinger-Grujin, H. Kosina, S. Selberherr:
"Dependence of Electron Mobility on Dopants in Heavily Doped Semiconductors";
Talk: Condensed Matter Physics Meeting, Pakota Island; 1997-02-04 - 1997-02-07; in: "Abstracts 21. Condensed Matter Physics Meeting", (1997), TA02.

277.  G. Kaiblinger-Grujin, H. Kosina, S. Selberherr:
"Electron Mobility in Doped Semiconductors";
Talk: International Conference on Computational Physics, Singapore; 1997-06-02 - 1997-06-04; in: "Abstracts Intl. Conf. on Computational Physics", (1997), 30 - 31.

276.  H. Brech, T. Grave, A. Werthof, H. Siveris, T. Simlinger, S. Selberherr:
"Influence of Backside Doping on the Nonlinear Capacitances of a PHEMT Affecting the VCO Frequency Characteristics";
Talk: International Symposium on Compound Semiconductors (ISCS), San Diego; 1997-09-08 - 1997-09-11; in: "Abstracts Intl. Symposium on Compound Semiconductors", (1997), ThA6.

275.  G. Kaiblinger-Grujin, H. Kosina, C. Köpf, S. Selberherr:
"Influence of Dopant Species on Electron Mobility in Heavily Doped Semiconductors";
Talk: International Conference on Defects in Semiconductors, Aveiro; 1997-07-21 - 1997-07-25; in: "Proceedings Intl. Conf. on Defects in Semiconductors", Proceedings Part 2, Section 11 (1997), 939 - 944.

274.  C. Köpf, G. Kaiblinger-Grujin, H. Kosina, S. Selberherr:
"Influence of Dopant Species on Electron Mobility in InP";
Talk: International Conference on Indium Phosphide an Related Materials, Hyannis; 1997-05-11 - 1997-05-15; in: "Proceedings Intl. Conf. on Indium Phosphide and Related Materials", (1997), 280 - 283.

273.  H. Brech, T. Simlinger, T. Grave, S. Selberherr:
"Influence of Gatelength on the DC-Characteristics and ft of Pseudomorphic Power-HEMTs";
Talk: Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Scheveningen; 1997-05-25 - 1997-05-28; in: "Proceedings Workshop on Compound Semiconductor Devices and Integrated Circuits", (1997), 1 - 2.

272.  H. Brech, T. Grave, T. Simlinger, S. Selberherr:
"Influence of T-Gate Shape and Footprint Length on PHEMT High Frequency Performance";
Talk: Gallium Arsenide Integrated Circuits Symposium (GaAs IC), Anaheim; 1997-10-12 - 1997-10-15; in: "Proceedings of the Gallium Arsenide Integrated Circuit Symposium (GaAs IC)", (1997), ISBN: 0-7803-4083-3; 66 - 69. https://doi.org/10.1109/GAAS.1997.628239

271.  M. Knaipp, S. Selberherr:
"Investigation on Hydrodynamic Impact Ionization (II) in n-MOSFETs";
Talk: International Conference on Computational Physics, Singapore; 1997-06-02 - 1997-06-04; in: "Abstracts Intl. Conf. on Computational Physics", (1997), 37 - 38.

270.  C. Troger, H. Kosina, S. Selberherr:
"Modeling Nonparabolicity Effects in Silicon Inversion Layers";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1997), ISBN: 0-7803-3775-1; 323 - 326. https://doi.org/10.1109/SISPAD.1997.621403

269.  G. Kaiblinger-Grujin, H. Kosina, S. Selberherr:
"Monte Carlo Simulation of Electron Transport in Doped Silicon";
Talk: High Performance Computing Asia Conference, Seoul; 1997-04-28 - 1997-05-02; in: "Proceedings High Performance Computing Asia 1997 Conf.", (1997), 444 - 449.

268.  R. Mlekus, S. Selberherr:
"Object-Oriented Management of Algorithms and Models";
Talk: European Simulation Symposium (ESS), Passau; 1997-10-19 - 1997-10-22; in: "Proceedings European Simulation Symposium", (1997), ISBN: 1-56555-125-7; 601 - 605.

267.  R. Plasun, C. Pichler, T. Simlinger, S. Selberherr:
"Optimization Tasks in Technology CAD";
Talk: European Simulation Symposium (ESS), Passau; 1997-10-19 - 1997-10-22; in: "Proceedings European Simulation Symposium", (1997), ISBN: 1-56555-125-7; 445 - 449.

266.  C. Köpf, G. Kaiblinger-Grujin, H. Kosina, S. Selberherr:
"Reexamination of Electron Mobility Dependence on Dopants in GaAs";
Talk: European Solid-State Device Research Conference (ESSDERC), Stuttgart; 1997-09-22 - 1997-09-24; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1997), ISBN: 2-86332-221-4; 304 - 307.

265.  R. Sabelka, K. Koyama, S. Selberherr:
"STAP - A Finite Element Simulator for Three-Dimensional Thermal Analysis of Interconnect Structures";
Talk: European Simulation Symposium (ESS), Passau; 1997-10-19 - 1997-10-22; in: "Proceedings European Simulation Symposium", (1997), ISBN: 1-56555-125-7; 621 - 625.

264.  C. Wasshuber, H. Kosina, S. Selberherr:
"Single-Electron Memories";
Talk: International Workshop on Computational Electronics (IWCE), Notre Dame, IN, USA; 1997-05-28 - 1997-05-30; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (1997), FrP1.

263.  T. Simlinger, C. Pichler, R. Plasun, S. Selberherr:
"Technology CAD for Smart Power Devices";
Talk: International Semiconductor Conference (CAS), Sinaia (invited); 1997-10-07 - 1997-10-11; in: "Proceedings CAS 97 Conf.", (1997), ISBN: 0-7803-3804-9; 383 - 393.

262.  H. Kosina, S. Selberherr:
"Technology CAD: Process and Device Simulation";
Talk: International Conference on Microelectronics (MIEL), Nis (invited); 1997-09-14 - 1997-09-17; in: "Proceedings of the International Conference on Microelectronics (MIEL)", (1997), ISBN: 0-7803-3664-x; 441 - 450. https://doi.org/10.1109/ICMEL.1997.632866

261.  S. Selberherr:
"The State of the Art in Technology Computer-Aided Design";
Talk: Primer Taller de Technicas de Simulacion en Semiconductores, Mexico City (invited); 1997-06-02 - 1997-06-03; in: "Abstracts Primer Taller de Technicas de Simulacion en Semiconductores", (1997), 1.

260.  P. Fleischmann, S. Selberherr:
"Three-Dimensional Delaunay Mesh Generation Using a Modified Advancing Front Approach";
Talk: International Meshing Roundtable, Park City; 1997-10-13 - 1997-10-15; in: "Proceedings 6th International Meshing Roundtable", (1997), 267 - 278.

259.  A. Stach, R. Sabelka, S. Selberherr:
"Three-Dimensional Layout-Based Thermal and Capacitive Simulation of Interconnect Structures";
Talk: International Conference on Modelling, Identification and Control, Innsbruck; 1997-02-17 - 1997-02-19; in: "Proceedings IASTED Intl. Conf. on Modelling, Identification and Control", (1997), ISBN: 0-88986-217-6; 16 - 19.

258.  H. Kirchauer, S. Selberherr:
"Three-Dimensional Photolithography Simulation";
Talk: Grundlagen und Technologie elektronischer Bauelemente, Großarl; 1997-03-19 - 1997-03-22; in: "Proceedings Seminar Basics and Technology of Electronic Devices", (1997), ISBN: 3-901578-02-1; 27 - 31.

257.  R. Strasser, C. Pichler, S. Selberherr:
"VISTA - A Framework for Technology CAD Purposes";
Talk: European Simulation Symposium (ESS), Passau; 1997-10-19 - 1997-10-22; in: "Proceedings European Simulation Symposium", (1997), ISBN: 1-56555-125-7; 450 - 454.

256.  G. Schrom, De Vivek, S. Selberherr:
"VLSI Performance Metric Based on Minimum TCAD Simulations";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1997), ISBN: 0-7803-3775-1; 25 - 28. https://doi.org/10.1109/SISPAD.1997.621327

255.  W. Tuppa, S. Selberherr:
"A CASE-Oriented Configuration Management Agent";
Talk: International Conference on Artificial Intelligence, Expert Systems and Neural Networks, Honolulu; 1996-08-19 - 1996-08-21; in: "Proceedings IASTED Intl. Conf. on Artificial Intelligence, Expert Systems and Neural Networks", (1996), ISBN: 0-88986-211-7; 368 - 371.

254.  W. Tuppa, S. Selberherr:
"A CASE-Oriented Configuration Management Utility";
Talk: International Conference on Modelling and Simulation, Pittsburgh; 1996-04-25 - 1996-04-27; in: "Proceedings IASTED Intl. Conf. on Modelling and Simulation", (1996), ISBN: 0-88986-201-x; 83 - 87.

253.  G. Schrom, A. Stach, S. Selberherr:
"A Charge Based MOSFET Model for Low-Voltage Mixed-Signal Applications";
Talk: European Solid-State Device Research Conference (ESSDERC), Bologna; 1996-09-09 - 1996-09-11; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1996), ISBN: 2-86332-196-x; 495 - 498.

252.  W. Tuppa, S. Selberherr:
"A Configuration Management Utility with CASE-Orientation";
Talk: International Conference on Modelling, Simulation and Optimization, Gold Coast; 1996-05-06 - 1996-05-09; in: "Proceedings IASTED Intl. Conf. on Modelling, Simulation and Optimization", (1996), ISBN: 0-88986-197-8; 242 - 273.

251.  G. Schrom, A. Stach, S. Selberherr:
"A Consistent Dynamic MOSFET Model for Low-Voltage Applications";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1996), ISBN: 0-7803-2745-4; 177 - 178. https://doi.org/10.1109/SISPAD.1996.865327

250.  P. Fleischmann, S. Selberherr:
"A New Approach to Fully Unstructured Three-Dimensional Delaunay Mesh Generation with Improved Element Quality";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1996), ISBN: 0-7803-2745-4; 129 - 130. https://doi.org/10.1109/SISPAD.1996.865308

249.  H. Puchner, P. Neary, S. Aronowitz, S. Selberherr:
"A Transient Activation Model for Phosphorus after Sub-Amorphizing Channeling Implants";
Talk: European Solid-State Device Research Conference (ESSDERC), Bologna; 1996-09-09 - 1996-09-11; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1996), ISBN: 2-86332-196-x; 157 - 160.

248.  M. Knaipp, T. Simlinger, W. Kanert, S. Selberherr:
"Analysis of Leakage Currents in Smart Power Devices";
Talk: European Solid-State Device Research Conference (ESSDERC), Bologna; 1996-09-09 - 1996-09-11; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1996), ISBN: 2-86332-196-x; 645 - 648.

247.  C. Köpf, H. Kosina, S. Selberherr:
"Anisotropic Mobility Model for GaInAs Covering Full Composition and Strain Range in the GaAs-InAs System";
Talk: International Symposium on Compound Semiconductors (ISCS), St. Petersburg; 1996-09-23 - 1996-09-27; in: "Proceedings Intl. Symposium on Compound Semiconductors", (1996), 675 - 678.

246.  H. Brech, T. Simlinger, T. Grave, S. Selberherr:
"Current Transport in Double Heterojunction HEMTs";
Talk: European Solid-State Device Research Conference (ESSDERC), Bologna; 1996-09-09 - 1996-09-11; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1996), ISBN: 2-86332-196-x; 873 - 876.

245.  P. Fleischmann, R. Sabelka, A. Stach, R. Strasser, S. Selberherr:
"Grid Generation for Three-Dimensional Process and Device Simulation";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan (invited); 1996-09-02 - 1996-09-04; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1996), ISBN: 0-7803-2745-4; 161 - 166. https://doi.org/10.1109/SISPAD.1996.865321

244.  R. Martins, S. Selberherr:
"Layout Data in TCAD Frameworks";
Talk: European Simulation Multiconference (ESM), Budapest; 1996-06-02 - 1996-06-06; in: "Proceedings European Simulation Multiconference", (1996), ISBN: 1-56555-097-8; 1122 - 1126.

243.  W. Bohmayr, A. Burenkov, J. Lorenz, H. Ryssel, S. Selberherr:
"Monte Carlo Simulation of Silicon Amorphization During Ion Implantation";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1996), ISBN: 0-7803-2745-4; 17 - 18. https://doi.org/10.1109/SISPAD.1996.865252

242.  S. Selberherr:
"Prozeßsimulation: Stand der Technik";
Talk: Verhandlungen der DPG, Frühjahrstagung Festkörperphysik, Regensburg (invited); 1996-03-25 - 1996-03-29; in: "Verhandlungen der DPG", (1996), 1360.

241.  H. Kirchauer, S. Selberherr:
"Rigorous Three-Dimensional Photolithography Simulation Over Nonplanar Structures";
Talk: European Solid-State Device Research Conference (ESSDERC), Bologna; 1996-09-09 - 1996-09-11; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (1996), ISBN: 2-86332-196-x; 347 - 350.

240.  C. Pichler, R. Plasun, R. Strasser, S. Selberherr:
"Simulation Environment for Semiconductor Technology Analysis";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1996), ISBN: 0-7803-2745-4; 147 - 148. https://doi.org/10.1109/SISPAD.1996.865314

239.   Selberherr, S. (1996).
The MINIMOS Simulator and TUV Perspective on TCAD.
In Symposium on Computer-Aided Design of IC Processes and Devices (pp. 1–14), Stanford. (reposiTUm)

238.  H. Kirchauer, S. Selberherr:
"Three-Dimensional Photoresist Exposure and Development Simulation";
Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (1996), ISBN: 0-7803-2745-4; 99 - 100. https://doi.org/10.1109/SISPAD.1996.865291

237.  E. Langer, S. Selberherr:
"Three-Dimensional Process Simulation for Advanced Silicon Semiconductor Devices";
Talk: International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM), Smolenice (invited); 1996-10-20 - 1996-10-24; in: "Proceedings ASDAM 96 Conf.", (1996), 169 - 177.

236.  H. Kirchauer, S. Selberh