Staff Person Publications | IuE

Publications Prateek Sharma

14 records

Publications in Scientific Journals

6.		Sharma, P., Tyaginov, S., Rauch, S. E., Franco, J., Makarov, A., Vexler, M. I., Kaczer, B., Grasser, T. (2017). Hot-Carrier Degradation Modeling of Decananometer nMOSFETs Using the Drift-Diffusion Approach. IEEE Electron Device Letters, 38(2), 160–163. https://doi.org/10.1109/led.2016.2645901 (reposiTUm)

5.		Jech, M., Sharma, P., Tyaginov, S., Rudolf, F., Grasser, T. (2016). On the Limits of Applicability of Drift-Diffusion Based Hot Carrier Degradation Modeling. Japanese Journal of Applied Physics, 55(4S), 04ED14. https://doi.org/10.7567/jjap.55.04ed14 (reposiTUm)

4.		Sharma, P., Tyaginov, S., Jech, M., Wimmer, Y., Rudolf, F., Enichlmair, H., Park, J.-M., Ceric, H., Grasser, T. (2016). The Role of Cold Carriers and the Multiple-Carrier Process of Si-H Bond Dissociation for Hot-Carrier Degradation in N- And P-Channel LDMOS Devices. Solid-State Electronics, 115, 185–191. https://doi.org/10.1016/j.sse.2015.08.014 (reposiTUm)

3.		Tyaginov, S., Jech, M., Franco, J., Sharma, P., Kaczer, B., Grasser, T. (2016). Understanding and Modeling the Temperature Behavior of Hot-Carrier Degradation in SiON N-MOSFETs. IEEE Electron Device Letters, 37(1), 84–87. https://doi.org/10.1109/led.2015.2503920 (reposiTUm)

2.		Sharma, P., Tyaginov, S., Wimmer, Y., Rudolf, F., Rupp, K., Enichlmair, H., Park, J.-M., Ceric, H., Grasser, T. (2015). Comparison of Analytic Distribution Function Models for Hot-Carrier Degradation in nLDMOSFETs. Microelectronics Reliability, 55(9–10), 1427–1432. https://doi.org/10.1016/j.microrel.2015.06.021 (reposiTUm)

1.		Sharma, P., Tyaginov, S. E., Wimmer, Y., Rudolf, F., Rupp, K., Bina, M., Enichlmair, H., Park, J. M., Minixhofer, R., Ceric, H., Grasser, T. (2015). Modeling of Hot-Carrier Degradation in nLDMOS Devices: Different Approaches to the Solution of the Boltzmann Transport Equation. IEEE Transactions on Electron Devices, 62(6), 1811–1818. https://doi.org/10.1109/ted.2015.2421282 (reposiTUm)

Talks and Poster Presentations (with Proceedings-Entry)

7.		Sharma, P., Tyaginov, S., Rauch, S., Franco, J., Kaczer, B., Makarov, A., Vexler, M., Grasser, T. (2016). A Drift-Diffusion-Based Analytic Description of the Energy Distribution Function for Hot-Carrier Degradation in Decananometer nMOSFETs. In 2016 46th European Solid-State Device Research Conference (ESSDERC), Montreux, Austria. https://doi.org/10.1109/essderc.2016.7599677 (reposiTUm)

6.		Tyaginov, S., Makarov, A., Jech, M., Franco, J., Sharma, P., Kaczer, B., Grasser, T. (2016). On the Effect of Interface Traps on the Carrier Distribution Function During Hot-Carrier Degradation. In 2016 IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA. https://doi.org/10.1109/iirw.2016.7904911 (reposiTUm)

5.		Sharma, P., Tyaginov, S., Wimmer, Y., Rudolf, F., Enichlmair, H., Park, J., Ceric, H., Grasser, T. (2015). A Model for Hot-Carrier Degradation in nLDMOS Transistors Based on the Exact Solution of the Boltzmann Transport Equation Versus the Drift-Diffusion Scheme. In EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Bologna, Italy. https://doi.org/10.1109/ulis.2015.7063763 (reposiTUm)

4.		Sharma, P., Tyaginov, S., Wimmer, Y., Rudolf, F., Rupp, K., Enichlmair, H., Park, J., Ceric, H., Grasser, T. (2015). Comparison of Analytic Distribution Function Models for Hot-Carrier Degradation in nLDMOSFETs. In Abstracts of the 26^th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (p. 60), Maastricht. (reposiTUm)

3.		Sharma, P., Jech, M., Tyaginov, S., Rudolf, F., Rupp, K., Enichlmair, H., Park, J., Grasser, T. (2015). Modeling of Hot-Carrier Degradation in LDMOS Devices Using a Drift-Diffusion Based Approach. In 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington, DC, United States. https://doi.org/10.1109/sispad.2015.7292258 (reposiTUm)

2.		Tyaginov, S., Jech, M., Sharma, P., Franco, J., Kaczer, B., Grasser, T. (2015). On the Temperature Behavior of Hot-Carrier Degradation. In 2015 IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA. https://doi.org/10.1109/iirw.2015.7437088 (reposiTUm)

1.		Sharma, P., Tyaginov, S., Wimmer, Y., Rudolf, F., Rupp, K., Bina, M., Enichlmair, H., Park, J., Ceric, H., Grasser, T. (2015). Predictive and Efficient Modeling of Hot-Carrier Degradation in nLDMOS Devices. In 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD), Hong Kong, China. https://doi.org/10.1109/ispsd.2015.7123471 (reposiTUm)

Doctor's Theses (authored and supervised)

1.		Sharma, P. (2020). Predictive and Efficient Modeling of Hot Carrier Degradation With Drift-Diffusion Based Carrier Transport Models Technische Universität Wien. https://doi.org/10.34726/hss.2021.88962 (reposiTUm)