Publications Sergey Smirnov
11 records
| 4. | V. Palankovski, G. Röhrer, T. Grasser, S. Smirnov, H. Kosina, S. Selberherr: "Rigorous Modeling Approach to Numerical Simulation of SiGe HBTs"; Applied Surface Science, 224, (2004), 361 - 364 doi:10.1016/j.apsusc.2003.09.034. BibTeX |
| 3. | S. Smirnov, H. Kosina: "Monte Carlo Modeling of the Electron Mobility in Strained Si1-xGex Layers on Arbitrarily Oriented Si1-yGey Substrates"; Solid-State Electronics, 48, (invited) (2004), 1325 - 1335 doi:10.1016/j.sse.2004.01.014. BibTeX |
| 2. | S. Smirnov, H. Kosina, M. Nedjalkov, S. Selberherr: "Monte Carlo Method for Modeling of Small Signal Response Including the Pauli Exclusion Principle"; Journal of Applied Physics, 94, (2003), 5791 - 5799 doi:10.1063/1.1616982. BibTeX |
| 1. | S. Smirnov, H. Kosina, S. Selberherr: "Investigation of the Electron Mobility in Strained Si1-x Gex at High Ge Composition"; IEICE Transactions on Electronics, E86-C, (2003), 350 - 356. BibTeX |
| 1. | S. Smirnov, H. Kosina, M. Nedjalkov, S. Selberherr: "A Zero Field Monte Carlo Algorithm Accounting for the Pauli Exclusion Principle"; in "Lecture Notes in Computer Science, Vol.2907", I. Lirkov, S. Margenov, J. Wasniewski, P. Yalamov (ed); Springer, 2003, ISBN: 3-540-21090-3, 185 - 193 doi:10.1007/978-3-540-24588-9_20. BibTeX |
| 4. | S. Smirnov, H. Kosina, S. Selberherr: "Substrate Orientation-Dependence of Electron Mobility in Strained SiGe Layers"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Cambridge, MA, USA; 2003-09-03 - 2003-09-05; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2003), ISBN: 0-7803-7826-1, 55 - 58 doi:10.1109/SISPAD.2003.1233636. BibTeX |
| 3. | S. Smirnov, H. Kosina, M. Nedjalkov, S. Selberherr: "A Zero Field Monte Carlo Algorithm Accounting for the Pauli Exclusion Principle"; Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 2003-06-04 - 2003-06-08; in "Abstracts of the 4th International Conference on Large-Scale Scientific Computations", (2003), 40 - 41. BibTeX |
| 2. | V. Palankovski, G. Röhrer, T. Grasser, S. Smirnov, H. Kosina, S. Selberherr: "Rigorous Modeling Approach to Numerical Simulation of SiGe-HBTs"; Poster: International SiGe Technology and Device Meeting (ISTDM), Nagoya; 2003-01-15 - 2003-01-17; in "First International SiGe Technology and Device Meeting", (2003), 97 - 98. BibTeX |
| 1. | S. Smirnov, H. Kosina, S. Selberherr: "Investigation of the Electron Mobility in Strained Si1-x Gex at High Ge Composition"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan; 2002-09-04 - 2002-09-06; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2002), ISBN: 4-89114-027-5, 29 - 32 doi:10.1109/SISPAD.2002.1034509. BibTeX |
| 1. | S. Smirnov: "Physical Modeling of Electron Transport in Strained Silicon and Silicon-Germanium"; Reviewer: H. Kosina, K. Unterrainer; Institut für Mikroelektronik, 2003, oral examination: 2003-12-17. BibTeX |
| 1. | H. Ceric, K. Dragosits, A. Gehring, S. Smirnov, V. Palankovski, S. Selberherr: "VISTA Status Report II"; (2002), 35 page(s) . BibTeX |