Publications Bernhard Stampfer

31 records

Publications in Scientific Journals

15.   Ravichandran, H., Knobloch, T., Pannone, A., Karl, A., Stampfer, B., Waldhör, D., Zheng, Y., Sakib, N., Karim Sadaf, M., Pendurthi, R., Torsi, R., Robinson, J. A., Grasser, T., Das, S. (2023).
Observation of Rich Defect Dynamics in Monolayer MoS₂.
ACS Nano, 17(15), 14449–14460. https://doi.org/10.1021/acsnano.2c12900 (reposiTUm)

14.   Tselios, K., Knobloch, T., Waldhör, D., Stampfer, B., Ioannidis, E., Enichlmair, H., Minixhofer, R., Grasser, T., Waltl, M. (2023).
Revealing the Impact of Gate Area Scaling on Charge Trapping Employing SiO₂ Transistors.
IEEE Transactions on Device and Materials Reliability, 23(3), 355–362. https://doi.org/10.1109/TDMR.2023.3262141 (reposiTUm)

13.   Waltl, M., Hernandez, Y., Schleich, C., Waschneck, K., Stampfer, B., Reisinger, H., Grasser, T. (2022).
Performance Analysis of 4h-SiC Pseudo-D CMOS Inverter Circuits Employing Physical Charge Trapping Models.
Materials Science Forum, 1062, 688–695. https://doi.org/10.4028/p-pijkeu (reposiTUm)

12.   Waltl, M., Knobloch, T., Tselios, K., Filipovic, L., Stampfer, B., Hernandez, Y., Waldhör, D., Illarionov, Y., Kaczer, B., Grasser, T. (2022).
Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology?
Advanced Materials, 34(48), 2201082. https://doi.org/10.1002/adma.202201082 (reposiTUm)

11.   Hernandez, Y., Stampfer, B., Grasser, T., Waltl, M. (2021).
Impact of Bias Temperature Instabilities on the Performance of Logic Inverter Circuits Using Different SiC Transistor Technologies.
Crystals, 11(9), 1150. https://doi.org/10.3390/cryst11091150 (reposiTUm)

10.   Waltl, M., Waldhoer, D., Tselios, K., Stampfer, B., Schleich, C., Rzepa, G., Enichlmair, H., Ioannidis, E. G., Minixhofer, R., Grasser, T. (2021).
Impact of Single-Defects on the Variability of CMOS Inverter Circuits.
Microelectronics Reliability, 126(114275), 114275. https://doi.org/10.1016/j.microrel.2021.114275 (reposiTUm)

9.   Waltl, M., Waldhör, D., Tselios, K., Stampfer, B., Schleich, C., Rzepa, G., Enichlmair, H., Ioannidis, E. G., Minixhofer, R., Grasser, T. (2021).
Impact of Single-Defects on the Variability of CMOS Inverter Circuits.
Microelectronics Reliability, 126, 1–6. https://doi.org/10.1016/j.microrel.2021.114275 (reposiTUm)

8.   Tselios, K., Waldhör, D., Stampfer, B., Michl, J., Ioannidis, E., Enichlmair, H., Grasser, T., Waltl, M. (2021).
On the Distribution of Single Defect Threshold Voltage Shifts in SiON Transistors.
IEEE Transactions on Device and Materials Reliability, 21(2), 199–206. https://doi.org/10.1109/tdmr.2021.3080983 (reposiTUm)

7.   Waldhoer, D., Schleich, C., Michl, J., Stampfer, B., Tselios, K., Ioannidis, E. G., Enichlmair, H., Waltl, M., Grasser, T. (2021).
Toward Automated Defect Extraction From Bias Temperature Instability Measurements.
IEEE Transactions on Electron Devices, 68(8), 4057–4063. https://doi.org/10.1109/ted.2021.3091966 (reposiTUm)

6.   Stampfer, B., Simicic, M., Weckx, P., Abbasi, A., Kaczer, B., Grasser, T., Waltl, M. (2020).
Extraction of Statistical Gate Oxide Parameters From Large MOSFET Arrays.
IEEE Transactions on Device and Materials Reliability, 20(2), 251–257. https://doi.org/10.1109/tdmr.2020.2985109 (reposiTUm)

5.   Stampfer, B., Schanovsky, F., Grasser, T., Waltl, M. (2020).
Semi-Automated Extraction of the Distribution of Single Defects for nMOS Transistors.
Micromachines, 11(4). https://doi.org/10.3390/mi11040446 (reposiTUm)

4.   Waltl, M., Stampfer, B., Rzepa, G., Kaczer, B., Grasser, T. (2020).
Separation of Electron and Hole Trapping Components of PBTI in SiON nMOS Transistors.
Microelectronics Reliability, 114(113746), 113746. https://doi.org/10.1016/j.microrel.2020.113746 (reposiTUm)

3.   Grill, A., Stampfer, B., Im, K.-S., Lee, J.-H., Ostermaier, C., Ceric, H., Waltl, M., Grasser, T. (2019).
Electrostatic Coupling and Identification of Single-Defects in GaN/AlGaN Fin-Mis-HEMTs.
Solid-State Electronics, 156, 41–47. https://doi.org/10.1016/j.sse.2019.02.004 (reposiTUm)

2.   Knobloch, T., Rzepa, G., Illarionov, Y., Waltl, M., Schanovski, F., Stampfer, B., Furchi, M. M., Müller, T., Grasser, T. (2018).
A Physical Model for the Hysteresis in MoS2 Transistors.
IEEE Journal of the Electron Devices Society, 6, 972–978. https://doi.org/10.1109/jeds.2018.2829933 (reposiTUm)

1.   Stampfer, B., Zhang, F., Illarionov, Y. Y., Knobloch, T., Wu, P., Waltl, M., Grill, A., Appenzeller, J., Grasser, T. (2018).
Characterization of Single Defects in Ultrascaled MoS2 Field-Effect Transistors.
ACS Nano, 12(6), 5368–5375. https://doi.org/10.1021/acsnano.8b00268 (reposiTUm)

Contributions to Books

2.   Waltl, M., Hernandez, Y., Schleich, C., Waschneck, K. A., Stampfer, B., Reisinger, H., Grasser, T. (2022).
Performance Analysis of 4h-SiC Pseudo-D CMOS Inverter Circuits Employing Physical Charge Trapping Models.
In J. F. Michaud, L. V. Phung, D. Alquier, D. Planson (Eds.), Silicon Carbide and Related Materials 2021 (pp. 688–695). Trans Tech Publications Ltd , Switzerland. (reposiTUm)

1.   Stampfer, B., Grill, A., Waltl, M. (2020).
Advanced Electrical Characterization of Single Oxide Defects Utilizing Noise Signals.
In T. Grasser (Ed.), Noise in Nanoscale Semiconductor Devices (pp. 229–257). Springer International Publishing. https://doi.org/10.1007/978-3-030-37500-3_7 (reposiTUm)

Talks and Poster Presentations (with Proceedings-Entry)

11.   Grasser, T., O'Sullivan, B., Kaczer, B., Franco, J., Stampfer, B., Waltl, M. (2021).
CV Stretch-Out Correction After Bias Temperature Stress: Work-Function Dependence of Donor-/Acceptor-Like Traps, Fixed Charges, and Fast States.
In 2021 IEEE International Reliability Physics Symposium (IRPS), Monterey, United States. https://doi.org/10.1109/irps46558.2021.9405184 (reposiTUm)

10.   Michl, J., Grill, A., Stampfer, B., Waldhoer, D., Schleich, C., Knobloch, T., Ioannidis, E., Enichlmair, H., Minixhofer, R., Kaczer, B., Parvais, B., Govoreanu, B., Radu, I., Grasser, T., Waltl, M. (2021).
Evidence of Tunneling Driven Random Telegraph Noise in Cryo-Cmos.
In Proceedings of the IEEE International Electron Devices Meeting (IEDM) (pp. 31.3.1–31.3.4), San Francisco, CA, United States. https://doi.org/10.1109/IEDM19574.2021.9720501 (reposiTUm)

9.   Knobloch, T., Michl, J., Waldhör, D., Illarionov, Y., Stampfer, B., Grill, A., Zhou, R., Wu, P., Waltl, M., Appenzeller, J., Grasser, T. (2020).
Analysis of Single Electron Traps in Nano-Scaled MoS2 FETs at Cryogenic Temperatures.
In Proceedings of the Device Research Conference (DRC) (pp. 52–53), Santa-Barbara, CA, USA. (reposiTUm)

8.   Tselios, K., Stampfer, B., Michl, J., Ioannidis, E., Enichlmair, H., Waltl, M. (2020).
Distribution of Step Heights of Electron and Hole Traps in SiON nMOS Transistors.
In 2020 IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA. https://doi.org/10.1109/iirw49815.2020.9312871 (reposiTUm)

7.   Grasser, T., Kaczer, B., O'Sullivan, B., Rzepa, G., Stampfer, B., Waltl, M. (2020).
The Mysterious Bipolar Bias Temperature Stress From the Perspective of Gate-Sided Hydrogen Release.
In 2020 IEEE International Reliability Physics Symposium (IRPS), Waikoloa, HI, USA. https://doi.org/10.1109/irps45951.2020.9129198 (reposiTUm)

6.   Stampfer, B., Simicic, M., Weckx, P., Abbasi, A., Kaczer, B., Grasser, T., Waltl, M. (2019).
Statistical Characterization of BTI and RTN Using Integrated pMOS Arrays.
In 2019 IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA. https://doi.org/10.1109/iirw47491.2019.8989904 (reposiTUm)

5.   Grasser, T., Stampfer, B., Waltl, M., Rzepa, G., Rupp, K., Schanovsky, F., Pobegen, G., Puschkarsky, K., Reisinger, H., O´Sullivan, B., Kaczer, B. (2018).
Characterization and Physical Modeling of the Temporal Evolution of Near-Interfacial States Resulting From NBTI/PBTI Stress in nMOS/pMOS Transistors.
In Proceedings of the IEEE International Reliability Physics Symposium (IRPS) (pp. 2A.2-1–2A.2-10), Waikoloa, HI, USA. (reposiTUm)

4.   Grill, A., Stampfer, B., Waltl, M., Im, K., Lee, J., Ostermaier, C., Ceric, H., Grasser, T. (2017).
Characterization and Modeling of Single Defects in GaN/AlGaN Fin-Mis-HEMTs.
In 2017 IEEE International Reliability Physics Symposium (IRPS), Waikoloa, HI, USA. https://doi.org/10.1109/irps.2017.7936285 (reposiTUm)

3.   Rzepa, G., Franco, J., Subirats, A., Jech, M., Chasin, A., Grill, A., Waltl, M., Knobloch, T., Stampfer, B., Chiarella, T., Horiguchi, N., Ragnarsson, L., Linten, D., Kaczer, B., Grasser, T. (2017).
Efficient Physical Defect Model Applied to PBTI in High-κ Stacks.
In Proceedings of the IEEE International Reliability Physics Symposium (IRPS) (pp. XT-11.1–XT-11.6), Waikoloa, HI, USA. (reposiTUm)

2.   Grasser, T., Waltl, M., Puschkarsky, K., Stampfer, B., Rzepa, G., Pobegen, G., Reisinger, H., Arimura, H., Kaczer, B. (2017).
Implications of Gate-Sided Hydrogen Release for Post-Stress Degradation Build-Up After BTI Stress.
In Proceedings of the IEEE International Reliability Physics Symposium (IRPS) (pp. 6A-2.1–6A-2.6), Waikoloa, HI, USA. (reposiTUm)

1.   Knobloch, T., Rzepa, G., Illarionov, Y., Waltl, M., Schanovsky, F., Jech, M., Stampfer, B., Furchi, M., Müller, T., Grasser, T. (2017).
Physical Modeling of the Hysteresis in M0S2 Transistors.
In 2017 47th European Solid-State Device Research Conference (ESSDERC), Montreux, Austria. https://doi.org/10.1109/essderc.2017.8066647 (reposiTUm)

Talks and Poster Presentations (without Proceedings-Entry)

1.   Illarionov, Y., Stampfer, B., Zhang, F., Knobloch, T., Wu, P., Waltl, M., Grill, A., Appenzeller, J., Grasser, T. (2018).
Characterization of Single Defects: From Si to MoS2 FETs.
International Conference on Physics of 2D Crystals (ICP2C3), Valetta, Malta, EU. (reposiTUm)

Doctor's Theses (authored and supervised)

1.   Stampfer, B. (2020).
Advanced Electrical Characterization of Charge Trapping in MOS Transistors
Technische Universität Wien. https://doi.org/10.34726/hss.2020.86423 (reposiTUm)

Diploma and Master Theses (authored and supervised)

1.   Stampfer, B. (2016).
Trap Assisted Tunneling and Band Interaction Using the Non-Radiative Multi Phonon Model
Technische Universität Wien. https://doi.org/10.34726/hss.2016.35327 (reposiTUm)