Staff Person Publications

Publications Bernhard Stampfer

27 records

Publications in Scientific Journals

12.	M. Waltl, Y. Hernandez, C. Schleich, K. Waschneck, B. Stampfer, H. Reisinger, T. Grasser: "Performance Analysis of 4H-SiC Pseudo-D CMOS Inverter Circuits Employing Physical Charge Trapping Models"; Materials Science Forum, 1062, (2022), 688 - 695 doi:10.4028/p-pijkeu. BibTeX
11.	M. Waltl, T. Knobloch, K. Tselios, L. Filipovic, B. Stampfer, Y. Hernandez, D. Waldhör, Y. Illarionov, B. Kaczer, T. Grasser: "Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology?"; Advanced Materials, n/a, (invited) (2022), 2201082-1 - 2201082-23 doi:10.1002/adma.202201082. BibTeX
10.	Y. Hernandez, B. Stampfer, T. Grasser, M. Waltl: "Impact of Bias Temperature Instabilities on the Performance of Logic Inverter Circuits Using Different SiC Transistor Technologies"; Crystals, 11, (2021), 1150-1 - 1150-9 doi:10.3390/cryst11091150. BibTeX
9.	K. Tselios, D. Waldhör, B. Stampfer, J. Michl, E. Ioannidis, H. Enichlmair, T. Grasser, M. Waltl: "On the Distribution of Single Defect Threshold Voltage Shifts in SiON Transistors"; IEEE Transactions on Device and Materials Reliability, 91, (invited) (2021), 199 - 206 doi:10.1109/TDMR.2021.3080983. BibTeX
8.	D. Waldhör, C. Schleich, J. Michl, B. Stampfer, K. Tselios, E. Ioannidis, H. Enichlmair, M. Waltl, T. Grasser: "Toward Automated Defect Extraction From Bias Temperature Instability Measurements"; IEEE Transactions on Electron Devices, 68, (2021), 4057 - 4063 doi:10.1109/TED.2021.3091966. BibTeX
7.	M. Waltl, D. Waldhör, K. Tselios, B. Stampfer, C. Schleich, G. Rzepa, H. Enichlmair, E. Ioannidis, R. Minixhofer, T. Grasser: "Impact of Single-Defects on the Variability of CMOS Inverter Circuits"; Microelectronics Reliability, 126, (2021), 114275-1 - 114275-6 doi:10.1016/j.microrel.2021.114275. BibTeX
6.	B. Stampfer, F. Schanovski, T. Grasser, M. Waltl: "Semi-Automated Extraction of the Distribution of Single Defects for nMOS Transistors"; Micromachines, 11, (invited) (2020), 446-1 - 446-11 doi:10.3390/mi11040446. BibTeX
5.	B. Stampfer, M. Simicic, P. Weckx, A. Abbasi, B. Kaczer, T. Grasser, M. Waltl: "Extraction of Statistical Gate Oxide Parameters From Large MOSFET Arrays"; IEEE Transactions on Device and Materials Reliability, 20, (invited) (2020), 251 - 257 doi:10.1109/TDMR.2020.2985109. BibTeX
4.	M. Waltl, B. Stampfer, G. Rzepa, B. Kaczer, T. Grasser: "Separation of Electron and Hole Trapping Components of PBTI in SiON nMOS Transistors"; Microelectronics Reliability, 114, (2020), 113746-1 - 113746-5 doi:10.1016/j.microrel.2020.113746. BibTeX
3.	A. Grill, B. Stampfer, K.-S. Im, J. Lee, C. Ostermaier, H. Ceric, M. Waltl, T. Grasser: "Electrostatic Coupling and Identification of Single-Defects in GaN/AlGaN Fin-MIS-HEMTs"; Solid-State Electronics, 19, (2019), 41 - 47 doi:10.1016/j.sse.2019.02.004. BibTeX
2.	T. Knobloch, G. Rzepa, Yu. Illarionov, M. Waltl, F. Schanovski, B. Stampfer, M. M. Furchi, T. Müller, T. Grasser: "A Physical Model for the Hysteresis in MoS2 Transistors"; IEEE Journal of the Electron Devices Society, 6, (2018), 972 - 978 doi:10.1109/JEDS.2018.2829933. BibTeX
1.	B. Stampfer, F. Zhang, Yu. Illarionov, T. Knobloch, P. Wu, M. Waltl, A. Grill, J. Appenzeller, T. Grasser: "Characterization of Single Defects in Ultrascaled MoS2 Field-Effect Transistors"; ACS Nano, 12, (2018), 5368 - 5375 doi:10.1021/acsnano.8b00268. BibTeX

Contributions to Books

M. Waltl, Y. Hernandez, C. Schleich, K. Waschneck, B. Stampfer, H. Reisinger, T. Grasser:
"Performance Analysis of 4H-SiC Pseudo-D CMOS Inverter Circuits Employing Physical Charge Trapping Models";
in "Silicon Carbide and Related Materials 2021", J. Michaud, L. Phung, D. Alquier, D. Planson (ed); Trans Tech Publications Ltd , Switzerland, 2022, ISBN: 9783035727609, 688 - 695 doi:10.1002/adma.202201082. BibTeX

B. Stampfer, A. Grill, M. Waltl:
"Advanced Electrical Characterization of Single Oxide Defects Utilizing Noise Signals";
in "Noise in Nanoscale Semiconductor Devices", T. Grasser (ed); Springer International Publishing, 2020, ISBN: 978-3-030-37499-0, 229 - 257 doi:10.1007/978-3-030-37500-3_7. BibTeX

Talks and Poster Presentations (with Proceedings-Entry)

10.	T. Grasser, B. O´Sullivan, B. Kaczer, J. Franco, B. Stampfer, M. Waltl: "CV Stretch-Out Correction after Bias Temperature Stress: Work-function Dependence of Donor-/Acceptor-like Traps, Fixed Charges, and Fast States"; Talk: IEEE International Reliability Physics Symposium (IRPS), virtual; 2021-03-21 - 2021-03-24; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2021), ISBN: 978-1-7281-6893-7, 1 - 6 doi:10.1109/IRPS46558.2021.9405184. BibTeX
9.	K. Tselios, B. Stampfer, J. Michl, E. Ioannidis, H. Enichlmair, M. Waltl: "Distribution of Step Heights of Electron and Hole Traps in SiON nMOS Transistors"; Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA - virtual; 2020-10-04 - 2020-10-08; in "Proceedings of the International Integrated Reliability Workshop (IIRW)", (2020), 1 - 6 doi:10.1109/IIRW49815.2020.9312871. BibTeX
8.	T. Knobloch, J. Michl, D. Waldhör, Yu. Illarionov, B. Stampfer, A. Grill, R. Zhou, P. Wu, M. Waltl, J. Appenzeller, T. Grasser: "Analysis of Single Electron Traps in Nano-scaled MoS₂ FETs at Cryogenic Temperatures"; Talk: Device Research Conference (DRC), Columbus, OH, USA - virtual; 2020-06-21 - 2020-06-24; in "Proceedings of the Device Research Conference (DRC)", (2020), 52 - 53. BibTeX
7.	T. Grasser, B. Kaczer, B. O´Sullivan, G. Rzepa, B. Stampfer, M. Waltl: "The Mysterious Bipolar Bias Temperature Stress from the Perspective of Gate-Sided Hydrogen Release"; Talk: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 2020-04-28 - 2020-04-30; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), ISBN: 978-1-7281-3200-6, 1 - 6 doi:10.1109/IRPS45951.2020.9129198. BibTeX
6.	B. Stampfer, M. Simicic, P. Weckx, A. Abbasi, B. Kaczer, T. Grasser, M. Waltl: "Statistical Characterization of BTI and RTN using Integrated pMOS Arrays"; Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2019-10-13 - 2019-10-17; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2019), 1 - 5 doi:10.1109/IIRW47491.2019.8989904. BibTeX
5.	T. Grasser, B. Stampfer, M. Waltl, G. Rzepa, K. Rupp, F. Schanovsky, G. Pobegen, K. Puschkarsky, H. Reisinger, B. O´Sullivan, B. Kaczer: "Characterization and Physical Modeling of the Temporal Evolution of Near-Interfacial States Resulting from NBTI/PBTI Stress in nMOS/pMOS Transistors"; Talk: IEEE International Reliability Physics Symposium (IRPS), Burlingame, CA, USA; 2018-03-11 - 2018-03-15; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2018), 2A.2-1 - 2A.2-10. BibTeX
4.	T. Knobloch, G. Rzepa, Yu. Illarionov, M. Waltl, F. Schanovsky, M. Jech, B. Stampfer, M. M. Furchi, T. Müller, T. Grasser: "Physical Modeling of the Hysteresis in MoS2 Transistors"; Talk: European Solid-State Device Research Conference (ESSDERC), Leuven, Belgium; 2017-09-11 - 2017-09-14; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2017), 284 - 287 doi:10.1109/ESSDERC.2017.8066647. BibTeX
3.	T. Grasser, M. Waltl, K. Puschkarsky, B. Stampfer, G. Rzepa, G. Pobegen, H. Reisinger, H. Arimura, B. Kaczer: "Implications of Gate-Sided Hydrogen Release for Post-Stress Degradation Build-Up after BTI Stress"; Talk: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2017-04-02 - 2017-04-06; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6641-4, 6A-2.1 - 6A-2.6. BibTeX
2.	A. Grill, B. Stampfer, M. Waltl, K.-S. Im, J. Lee, C. Ostermaier, H. Ceric, T. Grasser: "Characterization and Modeling of Single Defects in GaN/AlGaN Fin-MIS-HEMTs"; Talk: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2017-04-02 - 2017-04-06; in "Proceedings of IEEE International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6641-4, 3B-5.1 - 3B-5.5 doi:10.1109/IRPS.2017.7936285. BibTeX
1.	G. Rzepa, J. Franco, A. Subirats, M. Jech, A. Chasin, A. Grill, M. Waltl, T. Knobloch, B. Stampfer, T. Chiarella, N. Horiguchi, L. Ragnarsson, D. Linten, B. Kaczer, T. Grasser: "Efficient Physical Defect Model Applied to PBTI in High-κ Stacks"; Poster: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2017-04-02 - 2017-04-06; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6641-4, XT-11.1 - XT-11.6. BibTeX

Talks and Poster Presentations (without Proceedings-Entry)

1.	Yu. Illarionov, B. Stampfer, F. Zhang, T. Knobloch, P. Wu, M. Waltl, A. Grill, J. Appenzeller, T. Grasser: "Characterization of Single Defects: from Si to MoS2 FETs"; Poster: International Conference on Physics of 2D Crystals (ICP2C3), Valetta, Malta; 2018-05-29 - 2018-06-02; . BibTeX

Doctor's Theses (authored and supervised)

1.	B. Stampfer: "Advanced Electrical Characterization of Charge Trapping in MOS Transistors"; Reviewer: T. Grasser, M. Nafria Maqueda, F. M. Puglisi; Institut für Mikroelektronik, 2020, oral examination: 2020-12-04 doi:10.34726/hss.2020.86423. BibTeX

Diploma and Master Theses (authored and supervised)

1.	B. Stampfer: "Trap Assisted Tunneling and Band Interaction using the Non-Radiative Multi Phonon Model"; Supervisor: T. Grasser, A. Grill; Institut für Mikroelektronik, 2016, final examination: 2016-01-22. BibTeX