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Publications Zlatan Stanojevic

72 records

Publications in Scientific Journals

10.   Filipovic, L., Baumgartner, O., Klemenschits, X., Piso, J., Bobinac, J., Reiter, T., Strof, G., Rzepa, G., Stanojevic, Z., Karner, M. (2023).
DTCO Flow for Air Spacer Generation and Its Impact on Power and Performance at N7.
Solid-State Electronics, 199, Article 108527. https://doi.org/10.1016/j.sse.2022.108527 (reposiTUm)

9.   Bobinac, J., Reiter, T., Piso, J., Klemenschits, X., Baumgartner, O., Stanojevic, Z., Strof, G., Karner, M., Filipovic, L. (2023).
Effect of Mask Geometry Variation on Plasma Etching Profiles.
Micromachines, 14(3), Article 665. https://doi.org/10.3390/mi14030665 (reposiTUm)

8.   Kittler, M., Reiche, M., Schwartz, B., Uebensee, H., Kosina, H., Stanojevic, Z., Baumgartner, O., Ortlepp, T. (2019).
Transport of Charge Carriers Along Dislocations in Si and Ge.
Physica Status Solidi (a) – Applications and Materials Science, 216(17), 1900287. https://doi.org/10.1002/pssa.201900287 (reposiTUm)

7.   Reiche, M., Kittler, M., Pippel, E., Uebensee, H., Kosina, H., Grill, A., Stanojevic, Z., Baumgartner, O. (2016).
Impact of Defect-Induced Strain on Device Properties.
Advanced Engineering Materials, 18(12), 1–4. (reposiTUm)

6.   Stanojević, Z., Baumgartner, O., Filipović, L., Kosina, H., Karner, M., Kernstock, C., Prause, P. (2015).
Consistent Low-Field Mobility Modeling for Advanced MOS Devices.
Solid-State Electronics, 112, 37–45. https://doi.org/10.1016/j.sse.2015.02.008 (reposiTUm)

5.   Wolf, S., Neophytou, N., Stanojevic, Z., Kosina, H. (2014).
Monte Carlo Simulations of Thermal Conductivity in Nanoporous Si Membranes.
Journal of Electronic Materials, 43(10), 3870–3875. https://doi.org/10.1007/s11664-014-3324-x (reposiTUm)

4.   Osintsev, D., Baumgartner, O., Stanojevic, Z., Sverdlov, V., Selberherr, S. (2013).
Subband Splitting and Surface Roughness Induced Spin Relaxation in (001) Silicon SOI MOSFETs.
Solid-State Electronics, 90, 34–38. https://doi.org/10.1016/j.sse.2013.02.055 (reposiTUm)

3.   Baumgartner, O., Stanojevic, Z., Schnass, K., Karner, M., Kosina, H. (2013).
VSP - A Quantum-Electronic Simulation Framework.
Journal of Computational Electronics, 12(4), 701–721. https://doi.org/10.1007/s10825-013-0535-y (reposiTUm)

2.   Stanojević, Z., Sverdlov, V., Baumgartner, O., Kosina, H. (2012).
Subband Engineering in N-Type Silicon Nanowires Using Strain and Confinement.
Solid-State Electronics, 70, 73–80. https://doi.org/10.1016/j.sse.2011.11.022 (reposiTUm)

1.   Osintsev, D., Sverdlov, V., Stanojević, Z., Makarov, A., Selberherr, S. (2012).
Temperature Dependence of the Transport Properties of Spin Field-Effect Transistors Built With InAs and Si Channels.
Solid-State Electronics, 71, 25–29. https://doi.org/10.1016/j.sse.2011.10.015 (reposiTUm)

Contributions to Books

2.   Baumgartner, O., Stanojevic, Z., Kosina, H. (2012).
Monte Carlo Simulation of Electron Transport in Quantum Cascade Lasers.
In K. K. Sabelfeld, I. Dimov (Eds.), Monte Carlo Methods and Applications (pp. 59–67). De Gruyter. (reposiTUm)

1.   Osintsev, D., Sverdlov, V., Stanojevic, Z., Makarov, A., Weinbub, J., Selberherr, S. (2011).
Properties of Silicon Ballistic Spin Fin-Based Field-Effect Transistors.
In Y. Omura, H. Ishii, B.-Y. Nguyen, S. Selberherr, F. Gamiz, J. A. Martino, J.-P. Raskin (Eds.), ECS Transactions (pp. 277–282). ECS Transactions. https://doi.org/10.1149/1.3570806 (reposiTUm)

Talks and Poster Presentations (with Proceedings-Entry)

47.   Filipovic, L., Baumgartner, O., Piso, J., Bobinac, J., Reiter, T., Strof, G., Rzepa, G., Stanojevic, Z., Karner, M. (2022).
DTCO Flow for Air Spacer Generation and Its Impact on Power and Performance at N7.
In SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet (pp. 34–35), Granada, Spain. (reposiTUm)

46.   Bobinac, J., Reiter, T., Piso, J., Klemenschits, X., Baumgartner, O., Stanojevic, Z., Strof, G., Karner, M., Filipovic, L. (2022).
Impact of Mask Tapering on SF6/O2 Plasma Etching.
In Microelectronic Devices and Technologies: Proceedings of the 4rd International Conference on Microelectronic Devices and Technologies (MicDAT '2022) (pp. 90–94), Corfu, Greece. (reposiTUm)

45.   Vandemaele, M., Kaczer, B., Tyaginov, S., Stanojevic, Z., Makarov, A., Chasin, A., Bury, E., Mertens, H., Linten, D., Groeseneken, G. (2019).
Full ($V_{\mathrm{g}},\ V_{\mathrm{d}}$) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs.
In 2019 IEEE International Reliability Physics Symposium (IRPS), Waikoloa, HI, USA. https://doi.org/10.1109/irps.2019.8720406 (reposiTUm)

44.   Vandemaele, M., Kaczer, B., Stanojevic, Z., Tyaginov, S., Makarov, A., Chasin, A., Mertens, H., Linten, D., Groeseneken, G. (2018).
Distribution Function Based Simulations of Hot-Carrier Degradation in Nanowire FETs.
In 2018 International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA. https://doi.org/10.1109/iirw.2018.8727081 (reposiTUm)

43.   Karner, M., Baumgartner, O., Stanojevic, Z., Schanovsky, F., Strof, G., Kernstock, C., Karner, H., Rzepa, G., Grasser, T. (2016).
Vertically Stacked Nanowire MOSFETs for Sub-10nm Nodes: Advanced Topography, Device, Variability, and Reliability Simulations.
In 2016 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA. https://doi.org/10.1109/iedm.2016.7838516 (reposiTUm)

42.   Baumgartner, O., Filipovic, L., Kosina, H., Karner, M., Stanojevic, Z., Cheng-Karner, H. (2015).
Efficient Modeling of Source/Drain Tunneling in Ultra-Scaled Transistors.
In 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington, DC, United States. https://doi.org/10.1109/sispad.2015.7292294 (reposiTUm)

41.   Demel, H., Stanojevic, Z., Karner, M., Rzepa, G., Grasser, T. (2015).
Expanding TCAD Simulations From Grid to Cloud.
In 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington, DC, United States. https://doi.org/10.1109/sispad.2015.7292290 (reposiTUm)

40.   Karner, M., Stanojevic, Z., Kernstock, C., Baumgartner, O., Cheng-Karner, H. (2015).
Hierarchical TCAD Device Simulation of FinFETs.
In 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington, DC, United States. https://doi.org/10.1109/sispad.2015.7292308 (reposiTUm)

39.   Kernstock, C., Stanojevic, Z., Baumgartner, O., Karner, M. (2015).
Layout-Based TCAD Device Model Generation.
In 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington, DC, United States. https://doi.org/10.1109/sispad.2015.7292293 (reposiTUm)

38.   Filipovic, L., Stanojevic, Z., Baumgartner, O., Kosina, H. (2014).
3D Modeling of Direct Band-To-Band Tunneling in Nanowire TFETs.
In Conference Proceedings of the Tenth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits (pp. 1–2), Granada, Austria. (reposiTUm)

37.   Stanojevic, Z., Baumgartner, O., Karner, M., Filipovic, L., Kernstock, C., Kosina, H. (2014).
Advanced Numerical Methods for Semi-Classical Transport Simulation in Ultra-Narrow Channels.
In Abstracts of The 18th European Conference on Mathematics for Industry (p. 1), Taormina, Italy. (reposiTUm)

36.   Filipovic, L., Baumgartner, O., Stanojevic, Z., Kosina, H. (2014).
BTB Tunneling in InAs/Si Heterojunctions.
In 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan. https://doi.org/10.1109/sispad.2014.6931609 (reposiTUm)

35.   Filipovic, L., Baumgartner, O., Stanojevic, Z., Kosina, H. (2014).
Band-To-Band Tunneling in 3D Devices.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 13–14), Urbana-Champaign, IL, USA. (reposiTUm)

34.   Stanojevic, Z., Baumgartner, O., Filipovic, L., Kosina, H. (2014).
Comprehensive Low-Field Mobility Modeling in Nano-Scaled SOI Channels.
In Conference Proceedings of the Tenth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits (pp. 1–2), Granada, Austria. (reposiTUm)

33.   Stanojevic, Z., Filipovic, L., Baumgartner, O., Kosina, H. (2014).
Fast Methods for Full-Band Mobility Calculation.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 51–52), Urbana-Champaign, IL, USA. (reposiTUm)

32.   Stanojevic, Z., Baumgartner, O., Karner, M., Filipovic, L., Kernstock, C., Kosina, H. (2014).
Full-Band Modeling of Mobility in P-Type FinFETs.
In 2014 IEEE Silicon Nanoelectronics Workshop (pp. 83–84), Honolulu. (reposiTUm)

31.   Stanojevic, Z., Filipovic, L., Baumgartner, O., Karner, M., Kernstock, C., Kosina, H. (2014).
Full-Band Transport in Ultra-Narrow P-Type Si Channels: Field, Orientation, Strain.
In Proc.Intl.Conf.on Ultimate Integration on Silicon (ULIS) (p. 4), Bologna, Austria. (reposiTUm)

30.   Baumgartner, O., Stanojevic, Z., Filipovic, L., Grill, A., Grasser, T., Kosina, H., Karner, M. (2014).
Investigation of Quantum Transport in Nanoscaled GaN High Electron Mobility Transistors.
In 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan. https://doi.org/10.1109/sispad.2014.6931577 (reposiTUm)

29.   Stanojevic, Z., Baumgartner, O., Karner, M., Filipovic, L., Kernstock, C., Kosina, H. (2014).
On the Validity of Momentum Relaxation Time in Low-Dimensional Carrier Gases.
In 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan. https://doi.org/10.1109/sispad.2014.6931593 (reposiTUm)

28.   Stanojevic, Z., Karner, M., Kosina, H. (2013).
Exploring the Design Space of Non-Planar Channels: Shape, Orientation, and Strain.
In 2013 IEEE International Electron Devices Meeting, San Francisco, CA, USA. https://doi.org/10.1109/iedm.2013.6724618 (reposiTUm)

27.   Neophytou, N., Stanojevic, Z., Kosina, H. (2013).
Full Band Calculations of Low-Field Mobility in P-Type Silicon Nanowire MOSFETs.
In 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, United Kingdom. https://doi.org/10.1109/sispad.2013.6650579 (reposiTUm)

26.   Neophytou, N., Stanojevic, Z., Kosina, H. (2013).
Low-Field Mobility of Ultra-Narrow Si Nanowire MOSFETs Using Self-Consistent Full-Band Simulations.
In Booklet of Abstracts, Fifth International Conference on One Dimensional Nanomaterials (p. 142), Annecy, France. (reposiTUm)

25.   Stanojevic, Z., Kosina, H. (2013).
Modeling Surface-Roughness-Induced Scattering in Non-Planar Silicon Nanostructures.
In The 2013 Silicon Nanoelectronics Workshop (SNW) (pp. 93–94), Honolulu. (reposiTUm)

24.   Baumgartner, O., Stanojevic, Z., Kosina, H. (2013).
Modeling of the Effects of Band Structure and Transport in Quantum Cascade Detectors.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 86–87), Urbana-Champaign, IL, USA. (reposiTUm)

23.   Wolf, S., Neophytou, N., Stanojevic, Z. (2013).
Monte Carlo Simulations of Thermal Conductivity Nanoporous Si Membranes.
In Book of Abstracts (pp. 1–4), Nancy, Austria. (reposiTUm)

22.   Stanojevic, Z., Kosina, H. (2013).
Surface-Roughness-Scattering in Non-Planar Channels — The Role of Band Anisotropy.
In 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, United Kingdom. https://doi.org/10.1109/sispad.2013.6650647 (reposiTUm)

21.   Stanojevic, Z., Baumgartner, O., Schnass, K., Karner, M., Kosina, H. (2013).
VSP - A Quantum Simulator for Engineering Applications.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 132–133), Urbana-Champaign, IL, USA. (reposiTUm)

20.   Stanojevic, Z., Baumgartner, O., Kosina, H. (2012).
A Stable Discretization Method for "Dirac-Like" Effective Hamiltonians.
In Proc. International Quantum Cascade Lasers School, Workshop (p. 127), Baden, Austria. (reposiTUm)

19.   Osintsev, D., Baumgartner, O., Stanojevic, Z., Sverdlov, V., Selberherr, S. (2012).
Electric Field and Strain Effects on Surface Roughness Induced Spin Relaxation in Silicon Field-Effect Transistors.
In Proceedings of the 24th European Modeling and Simulation Symposium (pp. 156–162), Vienna, Austria, Austria. (reposiTUm)

18.   Osintsev, D., Baumgartner, O., Stanojevic, Z., Sverdlov, V., Selberherr, S. (2012).
Reduction of Surface Roughness Induced Spin Relaxation in MOSFETs by Strain.
In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 229–230), Urbana-Champaign, IL, USA. (reposiTUm)

17.   Osintsev, D., Baumgartner, O., Stanojevic, Z., Sverdlov, V., Selberherr, S. (2012).
Reduction of Surface Roughness Induced Spin Relaxation in SOI MOSFETs.
In 2012 15th International Workshop on Computational Electronics. https://doi.org/10.1109/iwce.2012.6242850 (reposiTUm)

16.   Osintsev, D., Stanojevic, Z., Baumgartner, O., Sverdlov, V., Selberherr, S. (2012).
Strain-Induced Reduction of Surface Roughness Dominated Spin Relaxation in MOSFETs.
In AIP Conference Proceedings, Wien, Österreich, Austria. https://doi.org/10.1063/1.4848413 (reposiTUm)

15.   Osintsev, D., Baumgartner, O., Stanojevic, Z., Sverdlov, V., Selberherr, S. (2012).
Valley Splitting and Spin Relaxation in Strained Silicon Quantum Wells.
In Book of Abstracts (p. P-27), Eindhoven, the Netherlands. (reposiTUm)

14.   Stanojevic, Z., Karner, M., Schnass, K., Kernstock, C., Baumgartner, O., Kosina, H. (2011).
A Versatile Finite Volume Simulator for the Analysis of Electronic Properties of Nanostructures.
In 2011 International Conference on Simulation of Semiconductor Processes and Devices, Osaka, Japan. https://doi.org/10.1109/sispad.2011.6035089 (reposiTUm)

13.   Osintsev, D., Sverdlov, V., Stanojevic, Z., Selberherr, S. (2011).
Ballistic Spin Field Effect Transistor Based on Silicon Nanowires.
In Bulletin American Physical Society (APS March Meeting 2011), Los Angeles/USA, Austria. (reposiTUm)

12.   Osintsev, D., Sverdlov, V., Stanojevic, Z., Makarov, A., Selberherr, S. (2011).
Ballistic Spin Field-Effect Transistors Built on Silicon Fins.
In Conference Proceedings of the VII Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits (pp. 59–60), Granada, Austria. (reposiTUm)

11.   Baumgartner, O., Stanojevic, Z., Kosina, H. (2011).
Efficient Simulation of Quantum Cascade Lasers Using the Pauli Master Equation.
In 2011 International Conference on Simulation of Semiconductor Processes and Devices, Osaka, Japan. https://doi.org/10.1109/sispad.2011.6035057 (reposiTUm)

10.   Baumgartner, O., Stanojevic, Z., Kosina, H. (2011).
Monte Carlo Simulation of Electron Transport in Quantum Cascade Lasers.
In Abstracts IMACS Seminar on Monte Carlo Methods (MCM) (p. 21), Reading. (reposiTUm)

9.   Osintsev, D., Sverdlov, V., Stanojevic, Z., Makarov, A., Weinbub, J., Selberherr, S. (2011).
Properties of Silicon Ballistic Spin Fin-Based Field-Effect Transistors.
In Meeting Abstracts (p. 1), Honolulu, Austria. (reposiTUm)

8.   Stanojevic, Z., Sverdlov, V., Baumgartner, O., Kosina, H. (2011).
Subband Engineering in N-Type Silicon Nanowires Using Strain and Confinement.
In Conference Proceedings of the VII Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits (pp. 99–100), Granadea, Spanien, Austria. (reposiTUm)

7.   Stanojevic, Z., Sverdlov, V., Selberherr, S. (2011).
Subband Structure Engineering in Silicon-On-Insulator FinFETs Using Confinement.
In ECS Transactions (pp. 117–122), Montreal. https://doi.org/10.1149/1.3570785 (reposiTUm)

6.   Osintsev, D., Sverdlov, V., Stanojevic, Z., Makarov, A., Selberherr, S. (2011).
Transport Properties of Spin Field-Effect Transistors Built on Si and InAs.
In Ulis 2011 Ultimate Integration on Silicon, Bologna, Austria. https://doi.org/10.1109/ulis.2011.5757998 (reposiTUm)

5.   Sverdlov, V., Stanojevic, Z., Baumgartner, O., Selberherr, S. (2010).
Confinement-Enhanced Valley Splitting for Spin-Driven Silicon Devices.
In Proceedings of the 6th International Conference on the Physics and Application of Spin Related Phenomena in Semiconductors (PASPS-VI) (pp. 273–274), Tokyo. (reposiTUm)

4.   Stanojevic, Z., Baumgartner, O., Sverdlov, V., Kosina, H. (2010).
Electronic Band Structure Modeling in Strained Si-Nanowires: Two Band K &Amp;#x00B7; P Versus Tight Binding.
In 2010 14th International Workshop on Computational Electronics, Urbana-Champaign, IL, USA. https://doi.org/10.1109/iwce.2010.5677927 (reposiTUm)

3.   Sverdlov, V., Stanojevic, Z., Baumgartner, O., Selberherr, S. (2010).
Enhanced Valley Splitting in Silicon Nanowires and Point Contacts.
In Abstract Book of the Nanoelectronics Days 2010 (p. 118), Aachen. (reposiTUm)

2.   Sverdlov, V., Stanojevic, Z., Baumgartner, O., Selberherr, S. (2010).
Spin-Driven Silicon Devices Utilizing Enhanced Valley Splitting.
In Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS) (p. TH-06), Kona. (reposiTUm)

1.   Stanojevic, Z., Baumgartner, O., Sverdlov, V., Kosina, H. (2010).
Subband Structure of Silicon Nanowires From the Hensel-Hasegawa-Nakayama Model.
In Proceedings of the 11th International Conference on Ultimate Integration o Silicon (pp. 69–72), Bologna, Austria. (reposiTUm)

Talks and Poster Presentations (without Proceedings-Entry)

8.   Harrer, A., Schwarz, B., Reininger, P., Gansch, R., Zederbauer, T., Andrews, A. M., Kalchmair, S., Schrenk, W., Baumgartner, O., Stanojevic, Z., Kosina, H., Strasser, G. (2013).
Intersubband Detectors.
3rd International Nanophotonics Meeting 2013, Salzburg, Austria. (reposiTUm)

7.   Schwarz, B., Reininger, P., Baumgartner, O., Stanojevic, Z., Kosina, H., Strasser, G. (2012).
A Mid-Infrared Dual Wavelenght Quantum Cascade Structure Designed for Both Emission and Detection.
International Conference on Physics of Semiconductor (ICPS), Wien, Österreich, Austria. (reposiTUm)

6.   Schwarz, B., Reininger, P., Baumgartner, O., Stanojevic, Z., Kosina, H., Strasser, G. (2012).
Dual Wavelength Quantum Cascade Structure That Can Act Both as Laser and Detector.
MIRTHE-IROn-SensorCAT virtual conference 2012, Princeton, Non-EU. (reposiTUm)

5.   Schwarz, B., Reininger, P., Baumgartner, O., Stanojevic, Z., Kosina, H., Strasser, G. (2012).
Dual-Color Quantum Cascade Structure for Coherent Emission and Detection.
International Quantum Cascade Lasers School, Workshop 2012 (IQCLSW 2012), Baden, Austria. (reposiTUm)

4.   Stanojevic, Z., Kosina, H. (2012).
Efficient Numerical Analysis of Dielectric Cavities.
European Semiconductor Laser Workshop (ESLW), Brussels, Belgium, EU. (reposiTUm)

3.   Schwarz, B., Reininger, P., Baumgartner, O., Stanojevic, Z., Kosina, H., Strasser, G. (2012).
Optimization of Intersubband Devices for Dual-Color Emission, Absorption and Detection.
ÖPG-Jahrestagung, Innsbruck, Austria, Austria. (reposiTUm)

2.   Reininger, P., Schwarz, B., Baumgartner, O., Stanojevic, Z., Kosina, H., Strasser, G. (2012).
Simulation of Dual Wavelength Photonic Crystal Quantum Cascade Laser.
International Conference on Physics of Semiconductor (ICPS), Wien, Österreich, Austria. (reposiTUm)

1.   Reininger, P., Schwarz, B., Kalchmair, S., Gansch, R., Baumgartner, O., Stanojevic, Z., Kosina, H., Schrenk, W., Strasser, G. (2012).
Simulation of a Dual Wavelength Quantum Cascade Laser in a Photonic Crystal Cavity.
International Quantum Cascade Lasers School, Workshop 2012 (IQCLSW 2012), Baden, Austria. (reposiTUm)

Doctor's Theses (authored and supervised)

1.   Stanojevic, Z. (2016).
Physical Mobility Modeling for TCAD Device Simulation
 Technische Universität Wien. https://doi.org/10.34726/hss.2016.37966 (reposiTUm)

Diploma and Master Theses (authored and supervised)

4.   Demel, H. (2016).
Autonom Skalierendes, Verteiltes Simulationsframework Für TCAD-Anwendungen
 Technische Universität Wien. https://doi.org/10.34726/hss.2016.23969 (reposiTUm)

3.  M. Kampl:
"Implementation of a Backward Monte Carlo Algorithm to Investigate Hot Carriers in Semiconductor Devices";
Supervisor: H. Kosina, Z. Stanojevic; Institut für Mikroelektronik, 2015; final examination: 2015-11-20.

2.   Sonderfeld, R. (2014).
Numerical Calculation of Semiconductor Band Structures
 Technische Universität Wien. (reposiTUm)

1.   Stanojević, Z. (2009).
Simulation of Carrier Transport in Ultra-Thin-Body Devices
 Technische Universität Wien. (reposiTUm)