Publications Roberta Stradiotto
6 records
| 2. | R. Stradiotto, G. Pobegen, C. Ostermaier, M. Waltl, A. Grill, T. Grasser: "Characterization of Interface Defects With Distributed Activation Energies in GaN-Based MIS-HEMTs"; IEEE Transactions on Electron Devices, 64, (2017), 1045 - 1052 doi:10.1109/TED.2017.2655367. BibTeX |
| 1. | R. Stradiotto, G. Pobegen, C. Ostermaier, T. Grasser: "Characterization of Charge Trapping Phenomena at III-N/Dielectric Interfaces"; Solid-State Electronics, 125, (2016), 142 - 153 doi:10.1016/j.sse.2016.07.017. BibTeX |
| 1. | R. Stradiotto, G. Pobegen, C. Ostermaier, T. Grasser: "On The Fly Characterization of Charge Trapping Phenomena at GaN/Dielectric and GaN/AlGaN/Dielectric Interfaces Using Impedance Measurements"; Talk: European Solid-State Device Research Conference (ESSDERC), Graz; 2015-09-14 - 2015-09-18; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2015), ISBN: 978-1-4673-7860-4, 218 - 225 doi:10.1109/ESSDERC.2015.7324754. BibTeX |
| 2. | C. Ostermaier, P. Lagger, M. Reiner, A. Grill, R. Stradiotto, G. Pobegen, T. Grasser, R. Pietschnig, D. Pogany: "Review of bias-temperature instabilities at the III-N/dielectric interface"; Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Bordequx, Frankreich; 2017-09-25 - 2017-09-28; . BibTeX |
| 1. | M. Capriotti, P. Lagger, C. Fleury, R. Stradiotto, M. Oposich, C. Ostermaier, G. Strasser, D. Pogany: "Effect of III-N Barrier Resistance on CV Characteristics in GaN-based MOSHEMTs in Spill-Over Regime"; Poster: International Workshop on Nitride Semiconductors (IWN 2014), Wroclaw; 2014-08-24 - 2014-08-29; . BibTeX |
| 1. | R. Stradiotto: "Characterization of Electrically Active Defects at III-N/Dielectric Interfaces"; Reviewer: T. Grasser, G. Meneghesso; Institut für Mikroelektronik, 2016, oral examination: 2016-12-16 doi:10.34726/hss.2016.41581. BibTeX |