Staff Person Publications

Publications Viktor Sverdlov

536 records

Books and Editorships

12.		Sverdlov, V., Jutong, N. (2022). Editorial for the Special Issue on Magnetic and Spin Devices. Micromachines, Vol.13 (p. 493). https://doi.org/10.3390/mi13040493 (reposiTUm)

11.		Sverdlov, V., Jutong, N. (Eds.). (2022). Magnetic and Spin Devices. MDPI. https://doi.org/10.3390/books978-3-0365-3841-9 (reposiTUm)

10.		Gamiz, F., Sverdlov, V., Sampedro, C., Donet, L. (2018). 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon EUROSOI-ULIS. In Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon EUROSOI-ULIS (pp. 1–2). IEEE Xplore. (reposiTUm)

9.		Gamiz, F., Sverdlov, V., Sampedro, C., Donet, L. (Eds.). (2018). 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon EUROSOI-ULIS Book of Abstracts. Universidad de Granada. (reposiTUm)

8.		Sverdlov, V., Selberherr, S. (2017). Editorial: Special Issue of Solid-State Electronics, Dedicated to EUROSOI-ULIS 2016. Solid-State Electronics, Vol.128 (pp. 1–2). https://doi.org/10.1016/j.sse.2016.10.015 (reposiTUm)

7.		Sverdlov, V., Selberherr, S. (Eds.). (2017). Special Issue: Extended Papers Selected From EUROSOI-ULIS 2016. Solid-State Electronics, Elsevier. (reposiTUm)

6.		Sverdlov, V., Cristoloveanu, S., Gamiz, F., Selberherr, S. (Eds.). (2016). 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon EUROSOI-ULIS. IEEE. (reposiTUm)

5.		Sverdlov, V., Gamiz, F., Cristoloveanu, S., Selberherr, S. (Eds.). (2016). 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon EUROSOI-ULIS Book of Abstracts. Society for Micro- and Nanoelectronics. (reposiTUm)

4.		Jonker, B., Porod, W., Sverdlov, V., Matsumoto, K., Selberherr, S., Goodnick, S. (Eds.). (2016). Innovative Nanoscale Devices and Systems. Society for Micro- and Nanoelectronics. (reposiTUm)

3.		Sverdlov, V., Selberherr, S., Gamiz, F., Cristoloveanu, S. (2016). Preface 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS). In 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS). IEEE Xplore. https://doi.org/10.1109/ulis.2016.7440034 (reposiTUm)

2.		Sverdlov, V., Jonker, B., Ishibashi, K., Goodnick, S., Selberherr, S. (Eds.). (2014). Innovative Nanoscale Devices and Systems. Society for Micro- and Nanoelectronics. (reposiTUm)

1.		Sverdlov, V. (Eds.). (2011). Strain-Induced Effects in Advanced MOSFETs. Springer-Verlag, Wien - New York. https://doi.org/10.1007/978-3-7091-0382-1 (reposiTUm)

Publications in Scientific Journals

85.		Jorstad, N. P., Fiorentini, S., Ender, J., Wolfgang Goes, Selberherr, S., Sverdlov, V. (2024). Micromagnetic Modeling of SOT-MRAM Dynamics. PHYSICA B-CONDENSED MATTER, 676, Article 415612. https://doi.org/10.1016/j.physb.2023.415612 (reposiTUm)

84.		Hadamek, T., Jorstad, N. P., Goes, W., Selberherr, S., Sverdlov, V. (2024). Numerical Study of Two-Terminal SOT-MRAM. Physica B: Condensed Matter, 673, 1–6. https://doi.org/10.1016/j.physb.2023.415362 (reposiTUm)

83.		Hadamek, T., Jorstad, N. P., Lacerda de Orio, R., Goes, W., Selberherr, S., Sverdlov, V. (2023). A Comprehensive Study of Temperature and Its Effects in SOT-MRAM Devices. Micromachines, 14(8), 1–14. https://doi.org/10.3390/mi14081581 (reposiTUm)

82.		Bendra, M., Fiorentini, S., Selberherr, S., Gös, W., Sverdlov, V. (2023). A Multi-Level Cell for Ultra-Scaled STT-MRAM Realized by Back-Hopping. Solid-State Electronics, 208, Article 108738. https://doi.org/10.1016/j.sse.2023.108738 (reposiTUm)

81.		Fiorentini, S., Pruckner, B., Goes, W., Selberherr, S., Sverdlov, V. (2023). Accurate Torque Evaluation in Elongated Ultra-Scaled STT-MRAM Devices. ECS Transactions, 111(1), 181–186. https://doi.org/10.1149/11101.0181ecst (reposiTUm)

80.		Fiorentini, S., Ender, J., Selberherr, S., Lacerda de Orio, R., Goes, W., Sverdlov, V. (2023). Comprehensive Evaluation of Torques in Ultra-Scaled MRAM Devices. Solid-State Electronics, 199, Article 108491. https://doi.org/10.1016/j.sse.2022.108491 (reposiTUm)

79.		Hadamek, T., Selberherr, S., Wolfgang Goes, Sverdlov, V. (2023). Modeling Thermal Effects in STT-MRAM. Solid-State Electronics, 200, Article 108522. https://doi.org/10.1016/j.sse.2022.108522 (reposiTUm)

78.		Bendra, M., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V. (2023). The Influence of Interface Effects on the Switching Behavior in Ultra-Scaled MRAM Cells. Solid-State Electronics, 201, Article 108590. https://doi.org/10.1016/j.sse.2023.108590 (reposiTUm)

77.		Selberherr, S., Sverdlov, V. (2022). About Electron Transport and Spin Control in Semiconductor Devices. Solid-State Electronics, 197, Article 108443. https://doi.org/10.1016/j.sse.2022.108443 (reposiTUm)

76.		Loch, W. J., Fiorentini, S., Jørstad, N. P., Goes, W., Selberherr, S., Sverdlov, V. (2022). Double Reference Layer STT-MRAM Structures With Improved Performance. Solid-State Electronics, 194(108335), Article 108335. https://doi.org/10.1016/j.sse.2022.108335 (reposiTUm)

75.		Sverdlov, V., Seiler, H., El-Sayed, A.-M. B., Illarionov, Y., Kosina, H. (2022). Edge Modes and Their Conductance in Narrow Nanoribbons of 2D Materials in a Topological Phase. Solid-State Electronics, 193(108266), 108266. https://doi.org/10.1016/j.sse.2022.108266 (reposiTUm)

74.		Fiorentini, S., Lacerda de Orio, R., Ender, J., Selberherr, S., Bendra, M., Jorstad, N. P., Goes, W., Sverdlov, V. (2022). Finite Element Method for MRAM Switching Simulations. WSEAS Transactions on Systems and Controls, 17, 585–588. https://doi.org/10.37394/23203.2022.17.64 (reposiTUm)

73.		Jørstad, N. P., Fiorentini, S., Loch, W. J., Goes, W., Selberherr, S., Sverdlov, V. (2022). Finite Element Modeling of Spin-Orbit Torques. Solid-State Electronics, 194, Article 108323. https://doi.org/10.1016/j.sse.2022.108323 (reposiTUm)

72.		Bendra, M., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V. (2022). Interface Effects in Ultra-Scaled MRAM Cells. Solid-State Electronics, 194(108373), 108373. https://doi.org/10.1016/j.sse.2022.108373 (reposiTUm)

71.		Ender, J., Lacerda de Orio, R., Fiorentini, S., Selberherr, S., Goes, W., Sverdlov, V. (2022). Reinforcement Learning to Reduce Failures in SOT-MRAM Switching. Microelectronics Reliability, 135(114570), 114570. https://doi.org/10.1016/j.microrel.2022.114570 (reposiTUm)

70.		Fiorentini, S., Ender, J., Selberherr, S., Goes, W., Sverdlov, V. (2022). Spin Transfer Torque Evaluation Based on Coupled Spin and Charge Transport: A Finite Element Method Approach. Journal on Systemics, Cybernetics and Informatics, 20(4), 40–44. https://doi.org/10.54808/JSCI.20.04.40 (reposiTUm)

69.		Fiorentini, S., Bendra, M., Ender, J., Lacerda de Orio, R., Goes, W., Selberherr, S., Sverdlov, V. (2022). Spin and Charge Drift-Diffusion in Ultra-Scaled MRAM Cells. Scientific Reports, 12, Article 20958. https://doi.org/10.1038/s41598-022-25586-4 (reposiTUm)

68.		Hadámek, T., Fiorentini, S., Bendra, M., Ender, J., de Orio, R. L., Goes, W., Selberherr, S., Sverdlov, V. (2022). Temperature Increase in STT-MRAM at Writing: A Fully Three-Dimensional Finite Element Approach. Solid-State Electronics, 193(108269), 108269. https://doi.org/10.1016/j.sse.2022.108269 (reposiTUm)

67.		Bendra, M., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V. (2022). The Influence of Interface Effects on the Switching Behavior in Ultra-Scaled MRAM Cells. Solid-State Electronics, 201, Article 108590. https://doi.org/10.1016/j.sse.2023.108590 (reposiTUm)

66.		Fiorentini, S., Ender, J., Selberherr, S., de Orio, R. L., Goes, W., Sverdlov, V. (2021). Coupled Spin and Charge Drift-Diffusion Approach Applied to Magnetic Tunnel Junctions. Solid-State Electronics, 186(108103), 108103. https://doi.org/10.1016/j.sse.2021.108103 (reposiTUm)

65.		Ender, J., Fiorentini, S., De Orio, R. L., Goes, W., Sverdlov, V., Selberherr, S. (2021). Emerging CMOS Compatible Magnetic Memories and Logic. IEEE Journal of the Electron Devices Society, 9, 456–463. https://doi.org/10.1109/jeds.2021.3066679 (reposiTUm)

64.		Ender, J., de Orio, R. L., Fiorentini, S., Selberherr, S., Goes, W., Sverdlov, V. (2021). Improving Failure Rates in Pulsed SOT-MRAM Switching by Reinforcement Learning. Microelectronics Reliability, 126(114231), 114231. https://doi.org/10.1016/j.microrel.2021.114231 (reposiTUm)

63.		Ender, J., Lacerda de Orio, R., Fiorentini, S., Selberherr, S., Goes, W., Sverdlov, V. (2021). Improving Failure Rates in Pulsed SOT-MRAM Switching by Reinforcement Learning. Microelectronics Reliability, 126, 1–5. https://doi.org/10.1016/j.microrel.2021.114231 (reposiTUm)

62.		de Orio, R. L., Ender, J., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V. (2021). Numerical Analysis of Deterministic Switching of a Perpendicularly Magnetized Spin-Orbit Torque Memory Cell. IEEE Journal of the Electron Devices Society, 9, 61–67. https://doi.org/10.1109/jeds.2020.3039544 (reposiTUm)

61.		de Orio, R. L., Ender, J., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V. (2021). Optimization of a Spin-Orbit Torque Switching Scheme Based on Micromagnetic Simulations and Reinforcement Learning. Micromachines, 12(4), 443. https://doi.org/10.3390/mi12040443 (reposiTUm)

60.		Sverdlov, V., El-Sayed, A.-M. B., Seiler, H., Kosina, H., Selberherr, S. (2021). Subbands in a Nanoribbon of Topologically Insulating MoS₂ in the 1T′ Phase. Solid-State Electronics, 184(108081), 108081. https://doi.org/10.1016/j.sse.2021.108081 (reposiTUm)

59.		de Orio, R. L., Ender, J., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V. (2021). Two-Pulse Switching Scheme and Reinforcement Learning for Energy Efficient SOT-MRAM Simulations. Solid-State Electronics, 185(108075), 108075. https://doi.org/10.1016/j.sse.2021.108075 (reposiTUm)

58.		Fiorentini, S., de Orio, R. L., Selberherr, S., Ender, J., Goes, W., Sverdlov, V. (2020). Analysis of Switching Under Fixed Voltage and Fixed Current in Perpendicular STT-MRAM. IEEE Journal of the Electron Devices Society, 8, 1249–1256. https://doi.org/10.1109/jeds.2020.3023577 (reposiTUm)

57.		Sverdlov, V., El-Sayed, E. A.-M., Kosina, H., Selberherr, S. (2020). Ballistic Conductance in a Topological 1T ’-MoS₂ Nanoribbon. Semiconductors, 54(12), 1713–1715. https://doi.org/10.1134/s1063782620120386 (reposiTUm)

56.		Sverdlov, V., El-Sayed, A.-M. B., Kosina, H., Selberherr, S. (2020). Conductance in a Nanoribbon of Topologically Insulating MoS₂ in the 1T’ Phase. IEEE Transactions on Electron Devices, 67(11), 4687–4690. https://doi.org/10.1109/ted.2020.3023921 (reposiTUm)

55.		de Orio, R. L., Makarov, A., Selberherr, S., Goes, W., Ender, J., Fiorentini, S., Sverdlov, V. (2020). Robust Magnetic Field-Free Switching of a Perpendicularly Magnetized Free Layer for SOT-MRAM. Solid-State Electronics, 168(107730), 107730. https://doi.org/10.1016/j.sse.2019.107730 (reposiTUm)

54.		de Orio, R. L., Makarov, A., Goes, W., Ender, J., Fiorentini, S., Sverdlov, V. (2020). Two-Pulse Magnetic Field-Free Switching Scheme for Perpendicular SOT-MRAM With a Symmetric Square Free Layer. Physica B: Condensed Matter, 578(411743), 411743. https://doi.org/10.1016/j.physb.2019.411743 (reposiTUm)

53.		Sverdlov, V., Selberherr, S. (2019). Current and Shot Noise at Spin-Dependent Hopping Through Junctions With Ferromagnetic Contacts. Solid-State Electronics, 159, 43–50. https://doi.org/10.1016/j.sse.2019.03.053 (reposiTUm)

52.		Ghosh, J., Osintsev, D., Sverdlov, V. (2019). Efficient Two-Level Parallelization Approach to Evaluate Spin Relaxation in a Strained Thin Silicon fFilm. Journal of Computational Electronics, 18(1), 28–36. https://doi.org/10.1007/s10825-018-1274-x (reposiTUm)

51.		Sverdlov, V., Makarov, A., Selberherr, S. (2019). Two-Pulse Sub-Ns Switching Scheme for Advanced Spin-Orbit Torque MRAM. Solid-State Electronics, 155, 49–56. https://doi.org/10.1016/j.sse.2019.03.010 (reposiTUm)

50.		Sverdlov, V., Selberherr, S. (2018). Demands for Spin-Based Nonvolatility in Emerging Digital Logic and Memory Devices for Low Power Computing. Facta Universitatis. Series Electronics and Energetics, 31(4), 529–545. https://doi.org/10.2298/fuee1804529s (reposiTUm)

49.		Sverdlov, V., Makarov, A., Selberherr, S. (2018). Reliable Sub-Nanosecond Switching of a Perpendicular SOT-MRAM Cell Without External Magnetic Field. Journal on Systemics, Cybernetics and Informatics, 16(2), 55–59. (reposiTUm)

48.		Sverdlov, V., Weinbub, J., Selberherr, S. (2017). Spintronics as a Non-Volatile Complement to Modern Microelectronics. Informacije Midem - Journal of Microelectronics Electronic Components and Materials, 47(4), 195–210. (reposiTUm)

47.		Makarov, A., Windbacher, T., Sverdlov, V., Selberherr, S. (2016). CMOS-Compatible Spintronic Devices: A Review. Semiconductor Science and Technology, 31(11), 113006. https://doi.org/10.1088/0268-1242/31/11/113006 (reposiTUm)

46.		Ghosh, J., Osintsev, D., Sverdlov, V., Selberherr, S. (2016). Enhancement of Electron Spin Relaxation Time in Thin SOI Films by Spin Injection Orientation and Uniaxial Stress. Journal of Nano Research, 39, 34–42. https://doi.org/10.4028/www.scientific.net/jnanor.39.34 (reposiTUm)

45.		Osintsev, D., Sverdlov, V., Selberherr, S. (2015). Electron Mobility and Spin Lifetime Enhancement in Strained Ultra-Thin Silicon Films. Solid-State Electronics, 112, 46–50. https://doi.org/10.1016/j.sse.2015.02.007 (reposiTUm)

44.		Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S. (2015). Influence of Magnetization Variations in the Free Layer on a Non-Volatile Magnetic Flip Flop. Solid-State Electronics, 108, 2–7. https://doi.org/10.1016/j.sse.2014.12.023 (reposiTUm)

43.		Ghosh, J., Osintsev, D., Sverdlov, V., Selberherr, S. (2015). Intersubband Spin Relaxation Reduction and Spin Lifetime Enhancement by Strain in SOI Structures. Microelectronic Engineering, 147, 89–91. https://doi.org/10.1016/j.mee.2015.04.072 (reposiTUm)

42.		Windbacher, T., Ghosh, J., Makarov, A., Sverdlov, V., Selberherr, S. (2015). Modelling of Multipurpose Spintronic Devices. International Journal of Nanotechnology, 12(3/4), 313. https://doi.org/10.1504/ijnt.2015.067215 (reposiTUm)

41.		Sverdlov, V., Selberherr, S. (2015). Silicon Spintronics: Progress and Challenges. Physics Reports, 585, 1–40. https://doi.org/10.1016/j.physrep.2015.05.002 (reposiTUm)

40.		Osintsev, D., Sverdlov, V., Selberherr, S. (2014). Acoustic Phonon and Surface Roughness Spin Relaxation Mechanisms in Strained Ultra-Scaled Silicon Films. Advanced Materials Research, 854, 29–34. https://doi.org/10.4028/www.scientific.net/amr.854.29 (reposiTUm)

39.		Windbacher, T., Makarov, A., Mahmoudi, H., Sverdlov, V., Selberherr, S. (2014). Novel Bias-Field-Free Spin Transfer Oscillator. Journal of Applied Physics, 115(17), 17C901. https://doi.org/10.1063/1.4862936 (reposiTUm)

38.		Makarov, A., Sverdlov, V., Selberherr, S. (2014). Progress in Magnetoresistive Memory: Magnetic Tunnel Junctions With a Composite Free Layer. International Journal of High Speed Electronics and Systems, 23(03n04), 1450014. https://doi.org/10.1142/s0129156414500141 (reposiTUm)

37.		Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S. (2014). Reliability-Based Optimization of Spin-Transfer Torque Magnetic Tunnel Junction Implication Logic Gates. Advanced Materials Research, 854, 89–95. https://doi.org/10.4028/www.scientific.net/amr.854.89 (reposiTUm)

36.		Ghosh, J., Windbacher, T., Sverdlov, V., Selberherr, S. (2014). Spin Injection in a Semiconductor Through a Space-Charge Layer. Solid-State Electronics, 101, 116–121. https://doi.org/10.1016/j.sse.2014.06.035 (reposiTUm)

35.		Ghosh, J., Sverdlov, V., Windbacher, T., Selberherr, S. (2014). Spin Injection and Diffusion in Silicon Based Devices From a Space Charge Layer. Journal of Applied Physics, 115(17), 17C503. https://doi.org/10.1063/1.4856056 (reposiTUm)

34.		Osintsev, D., Sverdlov, V., Makarov, A., Selberherr, S. (2013). Current and Conductance Modulation at Elevated Temperature in Silicon and InAs-based Spin Field-Effect Transistors. Sains Malaysiana, 42(2), 205–211. (reposiTUm)

33.		Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S. (2013). Implication Logic Gates Using Spin-Transfer-Torque-Operated Magnetic Tunnel Junctions for Intrinsic Logic-In-Memory. Solid-State Electronics, 84, 191–197. https://doi.org/10.1016/j.sse.2013.02.017 (reposiTUm)

32.		Mahmoudi, H., Sverdlov, V., Selberherr, S. (2013). Influence of Geometry on the Memristive Behavior of Domain Wall Spintronic Memristors and Its Applications for Measurement. Journal of Superconductivity and Novel Magnetism, 26(5), 1745–1748. https://doi.org/10.1007/s10948-012-2034-y (reposiTUm)

31.		Windbacher, T., Mahmoudi, H., Makarov, A., Sverdlov, V., Selberherr, S. (2013). Multiple Purpose Spin Transfer Torque Operated Devices. Facta Universitatis - Series: Electronics and Energetics, 26(3), 227–238. https://doi.org/10.2298/fuee1303227w (reposiTUm)

30.		Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S. (2013). Reliability Analysis and Comparison of Implication and Reprogrammable Logic Gates in Magnetic Tunnel Junction Logic Circuits. IEEE Transactions on Magnetics, 49(12), 5620–5628. https://doi.org/10.1109/tmag.2013.2278683 (reposiTUm)

29.		Windbacher, T., Triebl, O., Osintsev, D., Makarov, A., Sverdlov, V., Selberherr, S. (2013). Simulation Study of an Electrically Read- And Writable Magnetic Logic Gate. Microelectronic Engineering, 112, 188–192. https://doi.org/10.1016/j.mee.2012.12.030 (reposiTUm)

28.		Osintsev, D., Baumgartner, O., Stanojevic, Z., Sverdlov, V., Selberherr, S. (2013). Subband Splitting and Surface Roughness Induced Spin Relaxation in (001) Silicon SOI MOSFETs. Solid-State Electronics, 90, 34–38. https://doi.org/10.1016/j.sse.2013.02.055 (reposiTUm)

27.		Schanovsky, F., Baumgartner, O., Sverdlov, V., Grasser, T. (2012). A Multi Scale Modeling Approach to Non-Radiative Multi Phonon Transitions at Oxide Defects in MOS Structures. Journal of Computational Electronics, 11(3), 218–224. https://doi.org/10.1007/s10825-012-0403-1 (reposiTUm)

26.		Makarov, A., Sverdlov, V., Selberherr, S. (2012). Emerging Memory Technologies: Trends, Challenges, and Modeling Methods. Microelectronics Reliability, 52(4), 628–634. https://doi.org/10.1016/j.microrel.2011.10.020 (reposiTUm)

25.		Makarov, A., Sverdlov, V., Osintsev, D., Selberherr, S. (2012). Fast Switching in Magnetic Tunnel Junctions With Two Pinned Layers: Micromagnetic Modeling. IEEE Transactions on Magnetics, 48(4), 1289–1292. https://doi.org/10.1109/tmag.2011.2173565 (reposiTUm)

24.		Stanojević, Z., Sverdlov, V., Baumgartner, O., Kosina, H. (2012). Subband Engineering in N-Type Silicon Nanowires Using Strain and Confinement. Solid-State Electronics, 70, 73–80. https://doi.org/10.1016/j.sse.2011.11.022 (reposiTUm)

23.		Osintsev, D., Sverdlov, V., Stanojević, Z., Makarov, A., Selberherr, S. (2012). Temperature Dependence of the Transport Properties of Spin Field-Effect Transistors Built With InAs and Si Channels. Solid-State Electronics, 71, 25–29. https://doi.org/10.1016/j.sse.2011.10.015 (reposiTUm)

22.		Baumgartner, O., Sverdlov, V., Windbacher, T., Selberherr, S. (2011). Perspectives of Silicon for Future Spintronic Applications From the Peculiarities of the Subband Structure in Thin Films. IEEE Transactions on Nanotechnology, 10(4), 737–743. https://doi.org/10.1109/tnano.2010.2074211 (reposiTUm)

21.		Makarov, A., Sverdlov, V., Osintsev, D., Selberherr, S. (2011). Reduction of Switching Time in Pentalayer Magnetic Tunnel Junctions With a Composite-Free Layer. Physica Status Solidi (RRL) - Rapid Research Letters, 5(12), 420–422. (reposiTUm)

20.		Makarov, A., Sverdlov, V., Selberherr, S. (2011). Stochastic Model of the Resistive Switching Mechanism in Bipolar Resistive Random Access Memory: Monte Carlo Simulations. Journal of Vacuum Science, Technology B, 29(1), 01AD03. https://doi.org/10.1116/1.3521503 (reposiTUm)

19.		Windbacher, T., Sverdlov, V., Baumgartner, O., Selberherr, S. (2010). Electron Subband Structure in Strained Silicon UTB Films From the Hensel-Hasegawa-Nakayama Model - Part 1 Analytical Consideration and Strain-Induced Valley Splitting. Solid-State Electronics, 54(2), 137–142. https://doi.org/10.1016/j.sse.2009.12.008 (reposiTUm)

18.		Baumgartner, O., Karner, M., Sverdlov, V., Kosina, H. (2010). Electron Subband Structure in Strained Silicon UTB Films From the Hensel-Hasegawa-Nakayama Model - Part 2 Efficient Self-Consistent Numerical Solution of the k.p Schrödinger Equation. Solid-State Electronics, 54(2), 143–148. https://doi.org/10.1016/j.sse.2009.12.010 (reposiTUm)

17.		Makarov, A., Sverdlov, V., Selberherr, S. (2010). Stochastic Modeling of Bipolar Resistive Switching in Metal-Oxide Based Memory by Monte Carlo Technique. Journal of Computational Electronics, 9(3–4), 146–152. https://doi.org/10.1007/s10825-010-0317-8 (reposiTUm)

16.		Tyaginov, S., Sverdlov, V., Starkov, I., Gös, W., Grasser, T. (2009). Impact of O-Si-O Bond Angle Fluctuations on the Si-O Bond-Breakage Rate. Microelectronics Reliability, 49(9–11), 998–1002. https://doi.org/10.1016/j.microrel.2009.06.018 (reposiTUm)

15.		Sverdlov, V. A., Windbacher, T., Schanovsky, F., Selberherr, S. (2009). Mobility Modeling in Advanced MOSFETs With Ultra-Thin Silicon Body Under Stress. Journal of Integrated Circuits and Systems, 4(2), 55–60. https://doi.org/10.29292/jics.v4i2.298 (reposiTUm)

14.		Sverdlov, V., Baumgartner, O., Windbacher, T., Selberherr, S. (2009). Modeling of Modern MOSFETs With Strain. Journal of Computational Electronics, 8(3–4), 192–208. https://doi.org/10.1007/s10825-009-0291-1 (reposiTUm)

13.		Goes, W., Karner, M., Sverdlov, V., Grasser, T. (2008). Charging and Discharging of Oxide Defects in Reliability Issues. IEEE Transactions on Device and Materials Reliability, 8(3), 491–500. https://doi.org/10.1109/tdmr.2008.2005247 (reposiTUm)

12.		Sverdlov, V., Ungersboeck, E., Kosina, H., Selberherr, S. (2008). Current Transport Models for Nanoscale Semiconductor Devices. Materials Science and Engineering: R: Reports, 58(6), 228–270. https://doi.org/10.1016/j.mser.2007.11.001 (reposiTUm)

11.		Sverdlov, V., Kosina, H., Selberherr, S. (2008). Electron Subband Dispersions in Ultra-Thin Silicon Films From a Two-Band K·p Theory. Journal of Computational Electronics, 7(3), 164–167. https://doi.org/10.1007/s10825-008-0177-7 (reposiTUm)

10.		Sverdlov, V., Selberherr, S. (2008). Electron Subband Structure and Controlled Valley Splitting in Silicon Thin-Body SOI FETs: Two-Band k.p Theory and Beyond. Solid-State Electronics, 52(12), 1861–1866. https://doi.org/10.1016/j.sse.2008.06.054 (reposiTUm)

9.		Sverdlov, V., Karlowatz, G., Dhar, S., Kosina, H., Selberherr, S. (2008). Two-Band k.p Model for the Conduction Band in Silicon: Impact of Strain and Confinement on Band Structure and Mobility. Solid-State Electronics, 52(10), 1563–1568. https://doi.org/10.1016/j.sse.2008.06.019 (reposiTUm)

8.		Ungersboeck, E., Dhar, S., Karlowatz, G., Sverdlov, V., Kosina, H., Selberherr, S. (2007). The Effect of General Strain on the Band Structure and Electron Mobility of Silicon. IEEE Transactions on Electron Devices, 54(9), 2183–2190. https://doi.org/10.1109/ted.2007.902880 (reposiTUm)

7.		Sverdlov, V., Ungersboeck, S. E., Kosina, H. (2007). Theoretical Electron Mobility Analysis in Thin-Body FETs: Dependence on Substrate Orientation and Biaxial Strain. IEEE Transactions on Nanotechnology, 6(3), 334–340. https://doi.org/10.1109/tnano.2007.894835 (reposiTUm)

6.		Sverdlov, V., Ungersboeck, E., Kosina, H., Selberherr, S. (2007). Volume Inversion Mobility in SOI MOSFETs for Different Thin Body Orientations. Solid-State Electronics, 51(2), 299–305. https://doi.org/10.1016/j.sse.2007.01.022 (reposiTUm)

5.		Kinkhabwala, Y., Sverdlov, V., Likharev, K. (2006). A Numerical Study of Coulomb Interaction Effects on 2D Hopping Transport. Journal of Physics: Condensed Matter, 18, 2013–2027. (reposiTUm)

4.		Kinkhabwala, Y., Sverdlov, V., Korotkov, A. N., Likharev, K. (2006). A Numerical Study of Transport and Shot Noise in 2D Hopping. Journal of Physics: Condensed Matter, 18, 1999–2012. (reposiTUm)

3.		Sverdlov, V., Kosina, H., Selberherr, S. (2006). Modeling Current Transport in Ultra-Scaled Field-Effect Transistors. Microelectronics Reliability, 47(1), 11–19. https://doi.org/10.1016/j.microrel.2006.03.009 (reposiTUm)

2.		Sverdlov, V., Grasser, T., Kosina, H., Selberherr, S. (2006). Scattering and Space-Charge Effects in Wigner Monte Carlo Simulations of Single and Double Barrier Devices. Journal of Computational Electronics, 5(4), 447–450. https://doi.org/10.1007/s10825-006-0041-6 (reposiTUm)

1.		Sverdlov, V., Gehring, A., Kosina, H., Selberherr, S. (2005). Quantum Transport in Ultra-Scaled Double-Gate MOSFETs: A Wigner Function-Based Monte Carlo Approach. Solid-State Electronics, 49(9), 1510–1515. https://doi.org/10.1016/j.sse.2005.07.013 (reposiTUm)

Contributions to Books

27.		Selberherr, S., Sverdlov, V. (2023). Technology Computer-Aided Design: A Key Component of Microelectronics’ Development. In A. Nathan, S. K. Saha, R. M. Todi (Eds.), 75th Anniversary of the Transistor (pp. 337–347). Wiley. https://doi.org/10.1002/9781394202478.ch28 (reposiTUm)

26.		Sverdlov, V., Selberherr, S. (2022). Spin-Based Devices for Digital Applications. In M. Rudan, R. Brunetti, S. Reggiani (Eds.), Springer Handbook of Semiconductor Devices (pp. 1123–1166). Springer International Publishing. https://doi.org/10.1007/978-3-030-79827-7_31 (reposiTUm)

25.		Fiorentini, S., Lacerda de Orio, R., Selberherr, S., Ender, J., Goes, W., Sverdlov, V. (2020). Influence of Current Redistribution in Switching Models for Perpendicular STT-MRAM. In J. A. Martino, B.-Y. Nguyen, F. Gamiz, H. Ishii, J.-P. Raskin, S. Selberherr, E. Simoen (Eds.), ECS Transactions (pp. 159–164). ECS Transactions. https://doi.org/10.1149/09705.0159ecst (reposiTUm)

24.		Makarov, A., Sverdlov, V., Selberherr, S. (2018). Ultra-Fast Switching of a Free Magnetic Layer With Out-Of-Plane Magnetization in Spin-Orbit Torque MRAM Cells. In J. A. Martino, J.-P. Raskin, S. Selberherr, H. Ishii, F. Gamiz, B.-Y. Nguyen, A. Yoshino (Eds.), ECS Transactions (pp. 213–218). ECS Transactions. https://doi.org/10.1149/08508.0213ecst (reposiTUm)

23.		Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S. (2016). A Universal Nonvolatile Processing Environment. In S. Luryi, J. Xu, A. Zaslavsky (Eds.), Future Trends in Microelectronics - Journey into the Unknown (pp. 83–91). John Wiley, Sons. (reposiTUm)

22.		Gutierrez-D, E. A., Gamiz, F., Sverdlov, V., Selberherr, S., Torres-J, A. (2016). Device Physics, Modeling, and Technology for Nano-Scaled Semiconductor Devices. In E. A. Gutierrez-Dominguez (Ed.), Nano-Scaled Semiconductor Devices: Physics, Modelling, Characterisation, and Societal Impact (pp. 17–185). Institution of Engineering and Technology. https://doi.org/10.1049/pbcs027e_ch2 (reposiTUm)

21.		Osintsev, D., Sverdlov, V., Selberherr, S. (2016). Electron Momentum and Spin Relaxation in Silicon Films. In G. Russo, V. Capasso, G. Nicosia, V. Romano (Eds.), Mathematics in Industry (pp. 695–700). Springer International Publishing. https://doi.org/10.1007/978-3-319-23413-7_96 (reposiTUm)

20.		Sverdlov, V., Osintsev, D., Selberherr, S. (2016). Silicon-On-Insulator for Spintronic Applications: Spin Lifetime and Electric Spin Manipulation. In J. J. Liou, S.-K. Liaw, Y.-H. Chung (Eds.), Nano Devices and Sensors (pp. 29–48). De Gruyter. https://doi.org/10.1515/9781501501531-003 (reposiTUm)

19.		Sverdlov, V., Selberherr, S. (2015). (Invited) Spin-Based Silicon and CMOS-Compatible Devices. In Y. Omura, J. A. Martino, J.-P. Raskin, S. Selberherr, H. Ishii, F. Gamiz, B.-Y. Nguyen (Eds.), ECS Transactions (pp. 223–231). ECS Transactions. https://doi.org/10.1149/06605.0223ecst (reposiTUm)

18.		Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S. (2015). Novel Buffered Magnetic Logic Gate Grid. In F. Roozeboom, V. Narayanan, K. Kakushima, P. J. Timans, E. P. Gusev, Z. Karim, S. DeGendt (Eds.), ECS Transactions (pp. 295–303). ECS Transactions. https://doi.org/10.1149/06604.0295ecst (reposiTUm)

17.		Makarov, A., Sverdlov, V., Selberherr, S. (2015). Progress in Magnetoresistive Memory: Magnetic Tunnel Junctions With a Composite Free Layer. In S. Cristoloveanu, M. Shur (Eds.), Frontiers in Electronics. World Scientific Publishing Co. https://doi.org/10.1142/9789814656917_0001 (reposiTUm)

16.		Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S. (2015). Stateful STT-MRAM-Based Logic for Beyond–Von Neumann Computing. In T. Brozek, K. Iniewski (Eds.), Micro- and Nanoelectronics: Emerging Device Challenges and Solutions (pp. 221–250). CRC Press. https://doi.org/10.1201/b17597-11 (reposiTUm)

15.		Ghosh, J., Osintsev, D., Sverdlov, V., Selberherr, S. (2015). Variation of Spin Lifetime With Spin Injection Orientation in Strained Thin Silicon Films. In Y. Omura, J. A. Martino, J.-P. Raskin, S. Selberherr, H. Ishii, F. Gamiz, B.-Y. Nguyen (Eds.), ECS Transactions (pp. 233–240). ECS Transactions. https://doi.org/10.1149/06605.0233ecst (reposiTUm)

14.		Makarov, A., Sverdlov, V., Selberherr, S. (2014). Composite Magnetic Tunnel Junctions for Fast Memory Devices and Efficient Spin-Torque Nano-Oscillators. In G. Lee (Ed.), Future Information Engineering. WITPRESS. https://doi.org/10.2495/icie130451 (reposiTUm)

13.		Sverdlov, V., Ghosh, J., Osintsev, D., Selberherr, S. (2014). Modeling Silicon Spintronics. In Y. B. Senichenkov, V. Korablev, I. Chernorytski, N. Korovkin, S. Pozdnjkov, K. Ntalianis (Eds.), Recent Advances in Mathematical Methods in Applied Sciences (pp. 195–198). Mathematics and Computers in Science and Engineering Series \| 32. (reposiTUm)

12.		Osintsev, D., Sverdlov, V., Selberherr, S. (2014). Uniaxial Shear Strain as a Mechanism to Increase Spin Lifetime in Thin Film of a SOI-Based Silicon Spin FETs. In A. Nazarov, F. Balestra, V. Kilchytska, D. Flandre (Eds.), Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting (pp. 127–149). Springer International Publishing. https://doi.org/10.1007/978-3-319-08804-4_7 (reposiTUm)

11.		Makarov, A., Sverdlov, V., Selberherr, S. (2013). Magnetic Tunnel Junctions With a Composite Free Layer: A New Concept for Future Universal Memory. In S. Luryi, J. Xu, A. Zaslavsky (Eds.), Future Trends in Microelectronics - Frontiers and Innovations (pp. 93–101). John Wiley, Sons. (reposiTUm)

10.		Osintsev, D., Sverdlov, V., Selberherr, S. (2013). Spin Lifetime Enhancement by Shear Strain in Thin Silicon-On-Insulator Films. In Y. Omura, F. Gamiz, B.-Y. Nguyen, H. Ishii, J. A. Martino, S. Selberherr, J.-P. Raskin (Eds.), ECS Transactions (pp. 203–208). ECS Transactions. https://doi.org/10.1149/05305.0203ecst (reposiTUm)

9.		Windbacher, T., Sverdlov, V., Selberherr, S. (2011). Classical Device Modeling. In D. Vasileska, S. M. Goodnick (Eds.), Nano-Electronic Devices (pp. 1–96). Springer New York. https://doi.org/10.1007/978-1-4419-8840-9_1 (reposiTUm)

8.		Makarov, A., Sverdlov, V., Selberherr, S. (2011). Modeling of the SET and RESET Process in Bipolar Resistive Oxide-Based Memory Using Monte Carlo Simulations. In I. Dimov, S. Dimova, N. T. Kolkovska (Eds.), Numerical Methods and Applications (pp. 87–94). Springer Berlin Heidelberg. https://doi.org/10.1007/978-3-642-18466-6_9 (reposiTUm)

7.		Osintsev, D., Sverdlov, V., Stanojevic, Z., Makarov, A., Weinbub, J., Selberherr, S. (2011). Properties of Silicon Ballistic Spin Fin-Based Field-Effect Transistors. In Y. Omura, H. Ishii, B.-Y. Nguyen, S. Selberherr, F. Gamiz, J. A. Martino, J.-P. Raskin (Eds.), ECS Transactions (pp. 277–282). ECS Transactions. https://doi.org/10.1149/1.3570806 (reposiTUm)

6.		Windbacher, T., Sverdlov, V., Selberherr, S. (2010). Biotin-Streptavidin Sensitive BioFETs and Their Properties. In A. Fred, J. Filipe, H. Gamboa (Eds.), Biomedical Engineering Systems and Technologies (pp. 85–95). Springer Berlin Heidelberg. https://doi.org/10.1007/978-3-642-11721-3_6 (reposiTUm)

5.		Sverdlov, V., Baumgartner, O., Windbacher, T., Selberherr, S. (2010). Silicon for Spintronic Applications: Strain-Enhanced Valley Splitting. In S. Luryi, J. Xu, A. Zaslavsky (Eds.), Future Trends in Microelectronics (pp. 281–291). John Wiley, Sons. (reposiTUm)

4.		Sverdlov, V., Ungersboeck, E., Kosina, H. (2007). Mobility Modeling in SOI FETs for Different Substrate Orientations and Strain Conditions. In S. Hall, A. Nazarov, V. Lysenko (Eds.), Nanoscaled Semiconductor-on-Insulator Structures and Devices (pp. 357–362). Springer Netherlands. https://doi.org/10.1007/978-1-4020-6380-0_23 (reposiTUm)

3.		Ungersboeck, E., Sverdlov, V., Kosina, H., Selberherr, S. (2006). Low-Field Electron Mobility in Stressed UTB SOI MOSFETs for Different Substrate Orientations. In D. Harame, J. Boquet, M. Caymax, J. Cressler, H. Iwai, S. Koester, G. Masini, J. Murota, A. Reznicek, K. Rim, B. Tillack, S. Zaima (Eds.), ECS Transactions (pp. 45–54). ECS Transactions. https://doi.org/10.1149/1.2355793 (reposiTUm)

2.		Ungersboeck, E., Sverdlov, V., Kosina, H., Selberherr, S. (2006). Modeling of Advanced Semiconductor Devices. In J. A. Diniz, P. French, N. Morimoto, J. W. Swart, D. De Lima Monteiro (Eds.), ECS Transactions (pp. 207–216). ECS Transactions. https://doi.org/10.1149/1.2813493 (reposiTUm)

1.		Sverdlov, V., Kinkhabwala, Y., Kaplan, D., Korotkov, A. N., Kosina, H., Selberherr, S. (2005). Shot Noise Suppression and Enhancement at 2D Hopping and in Single-Electron Arrays. In Unsolved Problems of Noise and Fluctuations (pp. 177–182). American Institute of Physics. (reposiTUm)

Talks and Poster Presentations (with Proceedings-Entry)

391.		Bendra, M., Fiorentini, S., Selberherr, S., Goes, W., Sverdlov, V. (2023). A Multi-Level Cell for Ultra-Scaled STT-MRAM Realized by Back-Hopping. In 9th Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS) 2023 (pp. 1–2), Tarragona, Spain. (reposiTUm)

390.		Fiorentini, S., Pruckner, B., Goes, W., Selberherr, S., Sverdlov, V. (2023). Accurate Torque Evaluation in Elongated Ultra-Scaled STT-MRAM Devices. In 243rd ECS Meeting with the Eighteenth International Symposium on Solid Oxide Fuel Cells May 28, 2023 - June 2, 2023 Boston, USA (p. 1), Boston, MA, United States. https://doi.org/10.1149/MA2023-01331859mtgabs (reposiTUm)

389.		Bendra, M., Fiorentini, S., Ender, J., Lacerda de Orio, R., Hadamek, T., Jorstad, N., Pruckner, B., Selberherr, S., Goes, W., Sverdlov, V. (2023). Back-Hopping in Ultra-Scaled MRAM Cells. In Proceedings of the International Convention MIPRO (pp. 159–162), Opatija, Croatia. https://doi.org/10.23919/MIPRO57284.2023.10159764 (reposiTUm)

388.		Sverdlov, V., Selberherr, S. (2023). Charge and Spin Transport in Semiconductor Devices. In 2023 IEEE 15th International Conference on ASIC (ASICON) (pp. 1–4), Nanjing, China. https://doi.org/10.1109/ASICON58565.2023.10396645 (reposiTUm)

387.		Sverdlov, V., Bendra, M., Pruckner, B., Fiorentini, S., Goes, W., Selberherr, S. (2023). Comprehensive Modeling of Advanced Composite Magnetoresistive Devices. In Proceedings of the IEEE European Solid-State Device Research Conference (ESSDERC) (pp. 93–96), Lisbon, Portugal. https://doi.org/10.1109/ESSDERC59256.2023.10268508 (reposiTUm)

386.		Sverdlov, V., El-Sayed, A., Seiler, H., Kosina, H. (2023). Edge States Dispersion in Narrow Nanoribbons of 2D Transition Metal Dichalcogenides in the 1T′ Topological Phase. In 22nd International Winterschool - New Developments in Solid State Physics - Abstract Book (p. 116), Mauterndorf, Austria. (reposiTUm)

385.		Pruckner, B., Fiorentini, S., Goes, W., Sverdlov, V. (2023). Impact of Spin-Flip Length in dsMTJ Spacer Layers on Switching Performance. In Digital Book of Abstracts: 13th International Symposium on Hysteresis Modeling and Micromagnetics (HMM 2023) (p. 1), Vienna, Austria. (reposiTUm)

384.		Jorstad, N., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V. (2023). Micromagnetic Modeling of SOT-MRAM Dynamics. In Digital Book of Abstracts: 13th International Symposium on Hysteresis Modeling and Micromagnetics (HMM 2023) (p. 1), Vienna, Austria. (reposiTUm)

383.		Sverdlov, V., Jorstad, N., Bendra, M., Hadamek, T., Goes, W. (2023). Modeling Emerging Spintronic Devices and Spintronic THz Emitters. In Book of abstracts of the International Symposium on Terahertz-Related Devices and Technologies (TeraTech 2023) (pp. 50–51), Aizu-Wakamatsu, Japan. (reposiTUm)

382.		Bendra, M., Lacerda de Orio, R., Goes, W., Sverdlov, V., Selberherr, S. (2023). Modeling of Ultra-Scaled Magnetoresistive Random Access Memory. In Proceedings of the 5th International Conferenceon Microelectronic Devices and Technologies (MicDAT '2023) (pp. 28–30), Funchal (Madeira Island), Portugal. (reposiTUm)

381.		Sverdlov, V., Bendra, M., Goes, W., Fiorentini, S., Garcia-Barrientos, A., Selberherr, S. (2023). Multi-Level Operation in Ultra-Scaled MRAM. In 2023 IEEE Latin American Electron Devices Conference (LAEDC) Proceedings, Puebla, Mexico. https://doi.org/10.1109/LAEDC58183.2023.10209117 (reposiTUm)

380.		Jorstad, N., Hadamek, T., Bendra, M., Ender, J., Pruckner, B., Goes, W., Sverdlov, V. (2023). Numerical Simulations of Spintronic Magnetoresistive Memories. In SURGE Virtual Event North America 2023: Agenda (p. 1), Santa Clara, CA, United States. (reposiTUm)

379.		Hadamek, T., Jorstad, N., Goes, W., Selberherr, S., Sverdlov, V. (2023). Numerical Study of Two-Terminal SOT-MRAM. In Digital Book of Abstracts: 13th International Symposium on Hysteresis Modeling and Micromagnetics (HMM 2023) (p. 1), Vienna, Austria. (reposiTUm)

378.		Bendra, M., Fiorentini, S., Selberherr, S., Goes, W., Sverdlov, V. (2023). Simulation of Spin-Torque and Magnetization Dynamics in STT-MRAM Multi-Level Cells. In Digital Book of Abstracts: 13th International Symposium on Hysteresis Modeling and Micromagnetics (HMM 2023) (p. 1), Vienna, Austria. (reposiTUm)

377.		Jorstad, N., Goes, W., Selberherr, S., Sverdlov, V. (2023). Spin Drift-Diffusion Boundary Conditions for FEM Modeling of Multilayer SOT Devices. In Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 357–360), Kobe, Japan. https://doi.org/10.23919/SISPAD57422.2023.10319650 (reposiTUm)

376.		Sverdlov, V., Bendra, M., Pruckner, B., Jorstad, N., Hadamek, T., Ender, J., Lacerda de Orio, R., Gös, W. (2023). Spin and Charge Transport in Ultra-Scaled MRAM Cells. In Proceedings of the International Conference “Micro- and Nanoelectronics” (ICMNE) (p. 55), Moscow-Zvenigorod, Russian Federation. https://doi.org/10.29003/m3563.ICMNE-2023 (reposiTUm)

375.		Hadamek, T., Jorstad, N., Goes, W., Selberherr, S., Sverdlov, V. (2023). Study of Self-Heating and Its Effects in SOT-STT-MRAM. In 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 337–340), Kobe, Japan. https://doi.org/10.23919/SISPAD57422.2023.10319549 (reposiTUm)

374.		Bendra, M., Fiorentini, S., Hadamek, T., Jorstad, N., Ender, J., Lacerda de Orio, R., Selberherr, S., Goes, W., Sverdlov, V. (2023). Switching Composite Free Layers in Ultra-Scaled MRAM Cells. In 22nd International Winterschool - New Developments in Solid State Physics - Abstract Book (pp. 184–185), Mauterndorf, Austria. (reposiTUm)

373.		Pruckner, B., Fiorentini, S., Jorstad, N., Hadamek, T., Selberherr, S., Gös, W., Sverdlov, V. (2023). Switching Performance of Mo-Based pMTJ and dsMTJ Structures. In Book of Abstracts of the International Workshop on Computational Nanotechnology (pp. 144–145), Barcelona, Spain. (reposiTUm)

372.		Ender, J., Lacerda de Orio, R., Goes, W., Sverdlov, V. (2023). Towards Efficient SOT-assisted STT-MRAM Cell Switching Using Reinforcement Learning. In 14th International Conference, Large-Scale Scientific Computations LSSC'23 : Scientific Program, Abstracts, List of Participants (p. 39), Sozopol, Bulgaria. (reposiTUm)

371.		Bendra, M., Jorstad, N., Lacerda de Orio, R., Selberherr, S., Goes, W., Sverdlov, V. (2023). Unified Modeling of Ultra-Scaled STT-MRAM Cells: Harnessing Parasitic Effects for Enhanced Data Storage Dynamics. In IEDM 2023 Special MRAM poster session, San Francisco, United States. (reposiTUm)

370.		Selberherr, S., Sverdlov, V. (2022). About Electron Transport and Spin Control in Semiconductor Devices. In SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet, Granada, Spain. (reposiTUm)

369.		Orio, R., Ender, J., Goes, W., Fiorentini, S., Selberherr, S., Sverdlov, V. (2022). About the Switching Energy of a Magnetic Tunnel Junction Determined by Spin-Orbit Torque and Voltage-Controlled Magnetic Anisotropy. In 2022 IEEE Latin American Electron Devices Conference (LAEDC), Puebla, Mexico, Mexico. https://doi.org/10.1109/laedc54796.2022.9908222 (reposiTUm)

368.		Sverdlov, V., Bendra, M., Fiorentini, S., Ender, J., Lacerda de Orio, R., Hadamek, T., Loch, W., Jorstad, N., Goes, W., Selberherr, S. (2022). Advanced Modeling of Emerging Devices for Digital Spintronics. In 2nd International Conference on Nanoscience and Nanotechnology (p. 40), Dubai, United Arab Emirates. (reposiTUm)

367.		Sverdlov, V., Bendra, M., Fiorentini, S., Ender, J., Lacerda de Orio, R., Hadamek, T., Loch, W., Jorstad, N., Goes, W., Selberherr, S. (2022). Advanced Modeling of Emerging Magneto-Resistive Memory. In NANOMEET 2022 2nd International Meet, Expo on Nanotechnology (pp. 78–79), Edinburgh, United Kingdom. (reposiTUm)

366.		Ender, J., Fiorentini, S., Orio, R., Hadámek, T., Bendra, M., Goes, W., Selberherr, S., Sverdlov, V. (2022). Advances in Modeling Emerging Magnetoresistive Random Access Memories: From Finite Element Methods to Machine Learning Approaches. In Proc. SPIE 12157, International Conference on Micro- and Nano-Electronics 2021, Zvenigorod, Russian Federation. https://doi.org/10.1117/12.2624595 (reposiTUm)

365.		Illarionov, Y., Uzlu, B., Knobloch, T., Banshchikov, A., Sverdlov, V., Vexler, M., Sokolov, N., Waltl, M., Wang, Z., Neumaier, D., Lemme, M., Grasser, T. (2022). CVD-GFETs With Record-Small Hysteresis Owing to 2nm Epitaxial CaF2 Insulators. In Proceedings of the Device Research Conference (DRC) (pp. 121–122), Santa-Barbara, CA, USA. (reposiTUm)

364.		Fiorentini, S., Ender, J., Orio, R., Selberherr, S., Goes, W., Sverdlov, V. (2022). Comprehensive Evaluation of Torques in Ultra Scaled MRAM Devices. In SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet (pp. 11–12), Granada, Spain. (reposiTUm)

363.		Fiorentini, S., Loch, W., Bendra, M., Jørstad, N., Ender, J., Orio, R., Hadámek, T., Goes, W., Sverdlov, V., Selberherr, S. (2022). Design Analysis of Ultra-Scaled MRAM Cells. In Proceedings of 2022 IEEE 16th International Conference on Solid-State, Integrated Circuit Technology (ICSICT), Nanjing, China, China. (reposiTUm)

362.		Sverdlov, V., Seiler, H., El-Sayed, A., Illarionov, Y., Kosina, H., Selberherr, S. (2022). Edge Modes in Narrow Nanoribbons of Transition Metal Dichalcogenides in a Topological 1T. In International Conference on Physics and its Application 2022 (pp. 36–37), San Francisco, USA. (reposiTUm)

361.		Sverdlov, V., El-Sayed, A., Seiler, H., Kosina, H. (2022). Edge State Band Gap Dependencies on the Width of Transition Metal Dichalcogenide Nanoribbons in the 1T′ Topological Phase. In Workshop on Innovative Nanoscale Devices and Systems. Book of Abstracts (pp. 48–49), Lihue, HI, United States. (reposiTUm)

360.		Sverdlov, V., Bendra, M., Fiorentini, S., Ender, J., Orio, R., Hadámek, T., Loch, W., Jørstad, N., Goes, W., Selberherr, S. (2022). Emerging Devices for Digital Spintronics. In 2nd Global Conference, Expo on Nanotechnology, Nanoscience (pp. 32–33), online, INT. (reposiTUm)

359.		Fiorentini, S., Bendra, M., Ender, J., Goes, W., Sverdlov, V., Selberherr, S. (2022). Evaluating Spin Transfer Torques in Multilayered Magnetic Tunnel Junctions and Spin Valves. In Workshop on Innovative Nanoscale Devices and Systems. Book of Abstracts (pp. 44–45), Lihue, HI, United States. (reposiTUm)

358.		Jorstad, N., Fiorentini, S., Ender, J., Lacerda de Orio, R., Hadamek, T., Loch, W., Bendra, M., Goes, W., Selberherr, S., Sverdlov, V. (2022). Finite Element Modeling of Spin-Orbit Torques. In Proceedings of the Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS 2022)) (pp. 1–2), Udine, Italy. (reposiTUm)

357.		Sverdlov, V., Bendra, M., Fiorentini, S., Ender, J., Orio, R., Hadámek, T., Loch, W., Jørstad, N., Selberherr, S. (2022). Modeling Advanced Magnetoresistive Memory: A Journey From Finite Element Methods to Machine Learning Approaches. In 2nd Global Webinar on Nanoscience, Nanotechnology, online, INT. (reposiTUm)

356.		Fiorentini, S., Bendra, M., Ender, J., Hadamek, T., Loch, W., Jorstad, N., Lacerda de Orio, R., Goes, W., Selberherr, S., Sverdlov, V. (2022). Modeling Advanced Spintronic Based Magnetoresistive Memory. In International Conference on Microwave, THz Technologies, Wireless Communications and OptoElectronics (IRPhE 2022) (pp. 49–52), Yerevan, Armenia. https://doi.org/10.1049/icp.2022.2795 (reposiTUm)

355.		Sverdlov, V., Loch, W., Bendra, M., Fiorentini, S., Ender, J., Orio, R., Hadámek, T., Jorstad, N., Goes, W., Selberherr, S. (2022). Modeling Approach to Ultra-Scaled MRAM Cells. In Book of Abstracts of the International Meet On Applied Science, Engineering and Technology (ASETMEET) (pp. 7–8), Taastrup, Copenhagen. (reposiTUm)

354.		Jørstad, N., Fiorentini, S., Selberherr, S., Goes, W., Sverdlov, V. (2022). Modeling Interfacial and Bulk Spin-Orbit Torques. In Book of Abstracts of the International Conference on Nanostructured Materials (NANO), Sevilla, Spain. (reposiTUm)

353.		Hadámek, T., Goes, W., Selberherr, S., Sverdlov, V. (2022). Modeling Thermal Effects in STT-MRAM. In SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet (pp. 132–133), Granada, Spain. (reposiTUm)

352.		Sverdlov, V. (2022). Modeling Ultra-Scaled Magnetoresistive Memory Cells. In 3rd Global Webinar on Nanoscience, Nanotechnology, online, INT. (reposiTUm)

351.		Bendra, M., Loch, W., Jorstad, N., Fiorentini, S., Selberherr, S., Gös, W., Sverdlov, V. (2022). Modeling Ultra-Scaled Multi-Layer STT-MRAM Cells: A Unified Spin and Charge Drift-Diffusion Approach. In Special MRAM poster session IEDM (pp. 18–19), San Francisco, CA, United States. (reposiTUm)

350.		Loch, W., Selberherr, S., Sverdlov, V. (2022). Simulation of Novel MRAM Devices With Enhanced Performance. In Book of Abstracts of the International Conference on Nanostructured Materials (NANO), Sevilla, Spain. (reposiTUm)

349.		Fiorentini, S., Bendra, M., Ender, J., Orio, R., Goes, W., Selberherr, S., Sverdlov, V. (2022). Spin Torques in ULTRA-Scaled MRAM Devices. In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 348–351), Milan, Italy. (reposiTUm)

348.		Fiorentini, S., Ender, J., Selberherr, S., Goes, W., Sverdlov, V. (2022). Spin Transfer Torque Evaluation Based on Coupled Spin and Charge Transport: A Finite Element Method Approach. In The 26th World Multi-Conference on Systemics, Cybernetics and Informatics: WMSCI 2022. Proceedings Volume II (pp. 40–44), online, INT. (reposiTUm)

347.		Bendra, M., Fiorentini, S., Ender, J., Orio, R., Hadámek, T., Loch, W., Jørstad, N., Selberherr, S., Goes, W., Sverdlov, V. (2022). Spin Transfer Torques in Ultra-Scaled MRAM Cells. In 2022 45th Jubilee International Convention on Information, Communication and Electronic Technology (MIPRO) (pp. 129–132), Opatija, Croatia. (reposiTUm)

346.		Hadámek, T., Fiorentini, S., Bendra, M., Orio, R., Loch, W., Jorstad, N., Selberherr, S., Goes, W., Sverdlov, V. (2022). Temperature Modeling in STT-MRAM:A Fully Three-Dimensional Finite Element Approach. In Book of Abstracts of the International Conference on Nanostructured Materials (NANO), Sevilla, Spain. (reposiTUm)

345.		El-Sayed, A., Seiler, H., Kosina, H., Selberherr, S., Sverdlov, V. (2021). Ab-Initio Calculations of Edge States in Topological 1T′ MoS₂ Nanoribbons. In WINDS Book of Abstracts (pp. 79–80), Kona. (reposiTUm)

344.		Ender, J., Fiorentini, S., Orio, R., Hadámek, T., Bendra, M., Goes, W., Selberherr, S., Sverdlov, V. (2021). Advanced Modeling of Emerging MRAM: From Finite Element Methods to Machine Learning Approaches. In Proceedings of the International Conference Micro- and Nanoelectronics (ICMNE), Moscow-Zvenigorod. (reposiTUm)

343.		Ender, J., Fiorentini, S., Selberherr, S., Goes, W., Sverdlov, V. (2021). Advanced Modeling of Emerging Nonvolatile Magnetoresistive Devices. In Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN 2021) (pp. 45–46). (reposiTUm)

342.		Hadámek, T., Selberherr, S., Goes, W., Sverdlov, V. (2021). Asymmetry of Current-Induced Heating in Magnetic Tunnel Junctions. In Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN 2021) (pp. 49–50). (reposiTUm)

341.		Sverdlov, V., El-Sayed, A., Kosina, H., Selberherr, S. (2021). Ballistic Conductance, K. P Hamiltonian, Nanoribbons, Subbands, Topological Insulators (TIs), Topologically Protected Edge States. In Proceedings of the European Solid-State Device Research Conference (ESSDERC), TEDbrief Special Edition, Montreux, Austria. (reposiTUm)

340.		Sverdlov, V., Seiler, H., El-Sayed, A., Kosina, H. (2021). Conductance Due to the Edge Modes in Nanoribbons of 2D Materials in a Topological Phase. In 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS'2021), Caen, France. https://doi.org/10.1109/eurosoi-ulis53016.2021.9560173 (reposiTUm)

339.		Orio, R., Ender, J., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V. (2021). Deterministic Spin-Orbit Switching Scheme for an Array of Perpendicular MRAM Cells Suitable for Large Scale Integration. In Proceedings of the Trends in Magnetism Conference (TMAG), Cefalù, Italy. (reposiTUm)

338.		Jørstad, N., Fiorentini, S., Goes, W., Sverdlov, V. (2021). Efficient Finite Element Method Approach to Model Spin Orbit Torque MRAM. In Proceedings of the 14th International MOS-AK Workshop (p. 1), Silicon Valley, USA, United States. (reposiTUm)

337.		Ender, J., Orio, R., Sverdlov, V. (2021). Enhancing SOT-MRAM Switching Using Machine Learning. In Proceedings of the Silvaco Users Global Event (SURGE) (p. 1), Santa Clara, CA, USA - virtual. (reposiTUm)

336.		Bendra, M., Ender, J., Fiorentini, S., Hadámek, T., Orio, R., Goes, W., Selberherr, S., Sverdlov, V. (2021). Finite Element Method Approach to MRAM Modeling. In 2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO), Opatija, Croatia. https://doi.org/10.23919/mipro52101.2021.9597194 (reposiTUm)

335.		El-Sayed, A., Seiler, H., Kosina, H., Sverdlov, V. (2021). First Principles Approach to Study Topologically Protected Edge States in 1T′ MoS2 Nanoribbons. In Book of Abstracts of the 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) (pp. 113–114), Caen, France. (reposiTUm)

334.		El-Sayed, A., Seiler, H., Kosina, H., Jech, M., Waldhör, D., Sverdlov, V. (2021). First Principles Evaluation of Topologically Protected Edge States in MoS$_{2}$ 1T′ Nanoribbons With Realistic Terminations. In 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS). https://doi.org/10.1109/eurosoi-ulis53016.2021.9560183 (reposiTUm)

333.		Hadámek, T., Selberherr, S., Goes, W., Sverdlov, V. (2021). Heating Asymmetry in Magnetoresistive Random Access Memories. In Proceedings of the World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI) (pp. 63–66), Orlando, Florida, USA. (reposiTUm)

332.		Ender, J., de Orio, R., Fiorentini, S., Selberherr, S., Goes, W., Sverdlov, V. (2021). Improving Failure Rates in Pulsed SOT-MRAM Switching by Reinforcement Learning. In Microelectronics Reliability (p. 114231), Maastricht. https://doi.org/10.1016/j.microrel.2021.114231 (reposiTUm)

331.		Kosina, H., Seiler, H., Sverdlov, V. (2021). Numerical Calculation of the Transverse Modes in 1T' MoS2 Nanoribbons. In Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN 2021) (pp. 2–3). (reposiTUm)

330.		Ender, J., Orio, R., Fiorentini, S., Selberherr, S., Goes, W., Sverdlov, V. (2021). Reinforcement Learning Approach for Deterministic SOT-MRAM Switching. In Spintronics XIV (pp. 1180519-1–1180519-8), San Diego, United States. https://doi.org/10.1117/12.2593937 (reposiTUm)

329.		Ender, J., de Orio, R., Fiorentini, S., Selberherr, S., Goes, W., Sverdlov, V. (2021). Reinforcement Learning Approach for Sub-Critical Current SOT-MRAM Switching. In 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Dallas, TX, United States. https://doi.org/10.1109/sispad54002.2021.9592561 (reposiTUm)

328.		Ender, J., de Orio, R., Fiorentini, S., Selberherr, S., Goes, W., Sverdlov, V. (2021). Reinforcement Learning to Reduce Failures in SOT-MRAM Switching. In 2021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore. https://doi.org/10.1109/ipfa53173.2021.9617362 (reposiTUm)

327.		Ender, J., Fiorentini, S., Sverdlov, V., Goes, W., Orio, R., Selberherr, S. (2021). Reinforcement Learning Approach for Deterministic SOT-MRAM Switching. In Spintronics XIV, San Diego, CA, USA. https://doi.org/10.1117/12.2593937 (reposiTUm)

326.		Fiorentini, S., Ender, J., Orio, R., Selberherr, S., Goes, W., Sverdlov, V. (2021). Spin Drift-Diffusion Approach for the Computation of Torques in Multi-Layered Structures. In Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN 2021) (pp. 51–52). (reposiTUm)

325.		Fiorentini, S., Ender, J., Orio, R., Selberherr, S., Goes, W., Sverdlov, V. (2021). Spin and Charge Drift-Diffusion Approach to Torque Computation in Magnetic Tunnel Junctions. In 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Dallas, TX, United States. https://doi.org/10.1109/sispad54002.2021.9592559 (reposiTUm)

324.		Fiorentini, S., Orio, R., Selberherr, S., Ender, J., Goes, W., Sverdlov, V. (2021). Spin and Charge Drift-Diffusion Approach to Torque Computation in Spintronic Devices. In WINDS Book of Abstracts (pp. 12–13), Kona. (reposiTUm)

323.		Fiorentini, S., Bendra, M., Ender, J., Orio, R., Selberherr, S., Goes, W., Sverdlov, V. (2021). Spin and Charge Drift-Diffusion in Ultra-Scaled MRAM Cells. In Proceedings of the IEEE International Electron Devices Meeting (IEDM) Special Poster Session Dedicated to MRAM, San Francisco, CA, USA. https://doi.org/10.21203/rs.3.rs-1915307/v1 (reposiTUm)

322.		Hadamek, T., Bendra, M., Fiorentini, S., Ender, J., de Orio, R., Goes, W., Selberherr, S., Sverdlov, V. (2021). Temperature Increase in MRAM at Writing: A Finite Element Approach. In 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS). https://doi.org/10.1109/eurosoi-ulis53016.2021.9560669 (reposiTUm)

321.		Hadámek, T., Bendra, M., Fiorentini, S., Ender, J., Orio, R., Gös, W., Selberherr, S., Sverdlov, V. (2021). Temperature Increase in STT-MRAM at Writing: A Fully Three-Dimensional Finite Element Approach. In 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS'2021), Caen, France. https://doi.org/10.1109/EuroSOI-ULIS53016.2021.9560669 (reposiTUm)

320.		Sverdlov, V., Selberherr, S. (2020). A Monte Carlo Evaluation of the Current and Low Frequency Current Noise at Spin-Dependent Hopping. In Large-Scale Scientific Computing: 12th International Conference, LSSC 2019 (pp. 446–453), Sozopol, Bulgaria. https://doi.org/10.1007/978-3-030-41032-2_51 (reposiTUm)

319.		Kosina, H., Seiler, H., Sverdlov, V. (2020). Analytical Formulae for the Surface Green’s Functions of Graphene and 1T’ MoS₂ Nanoribbons. In 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan. https://doi.org/10.23919/sispad49475.2020.9241650 (reposiTUm)

318.		Sverdlov, V., El-Sayed, A., Kosina, H., Selberherr, S. (2020). Ballistic Conductance in a Topological 1t'-MoS2 Nanoribbon. In Proceedings of the International Symposium on Nanostructures: Physics and Technology (NANO) (pp. 200–201), Minsk, Belarus - virtual. (reposiTUm)

317.		Fiorentini, S., Ender, J., Selberherr, S., de Orio, R., Goes, W., Sverdlov, V. (2020). Comprehensive Modeling of Coupled Spin and Charge Transport Through Magnetic Tunnel Junctions. In 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Bologna, Italy. https://doi.org/10.1109/eurosoi-ulis49407.2020.9365497 (reposiTUm)

316.		Fiorentini, S., Ender, J., Mohamedou, M., Selberherr, S., Orio, R., Goes, W., Sverdlov, V. (2020). Comprehensive Modeling of Coupled Spin-Charge Transport and Magnetization Dynamics in STT-MRAM Cells. In Spintronics XIII (pp. 50–56), Austria. https://doi.org/10.1117/12.2567480 (reposiTUm)

315.		Fiorentini, S., Ender, J., Mohamedou, M., Sverdlov, V., Goes, W., Orio, R., Selberherr, S. (2020). Comprehensive Modeling of Coupled Spin-Charge Transport and Magnetization Dynamics in STT-MRAM Cells. In Spintronics XIII, San Diego, CA, USA. https://doi.org/10.1117/12.2567480 (reposiTUm)

314.		Fiorentini, S., Ender, J., Mohamedou, M., Orio, R., Selberherr, S., Goes, W., Sverdlov, V. (2020). Computation of Torques in Magnetic Tunnel Junctions Through Spin and Charge Transport Modeling. In 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan. https://doi.org/10.23919/sispad49475.2020.9241657 (reposiTUm)

313.		Ender, J., Mohamedou, M., Fiorentini, S., Orio, R., Selberherr, S., Goes, W., Sverdlov, V. (2020). Efficient Demagnetizing Field Calculation for Disconnected Complex Geometries in STT-MRAM Cells. In 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan. https://doi.org/10.23919/sispad49475.2020.9241662 (reposiTUm)

312.		Sverdlov, V., Fiorentini, S., Ender, J., Goes, W., de Orio, R., Selberherr, S. (2020). Emerging CMOS Compatible Magnetic Memories and Logic. In 2020 IEEE Latin America Electron Devices Conference (LAEDC), San Jose, Costa Rica. https://doi.org/10.1109/laedc49063.2020.9073332 (reposiTUm)

311.		Fiorentini, S., Lacerda de Orio, R., Selberherr, S., Ender, J., Goes, W., Sverdlov, V. (2020). Influence of Current Redistribution in Switching Models for Perpendicular STT-MRAM. In ECS Meeting Abstracts (p. 1389), Honolulu, Austria. https://doi.org/10.1149/ma2020-01241389mtgabs (reposiTUm)

310.		Sverdlov, V. (2020). Modeling Spin Transfer Torque Magnetoresistive Memory. In Proceedings of the Silvaco Users Global Event (SURGE) (p. 1), Santa Clara, CA, USA - virtual. (reposiTUm)

309.		Fiorentini, S., de Orio, R., Selberherr, S., Ender, J., Goes, W., Sverdlov, V. (2020). Perpendicular STT-MRAM Switching at Fixed Voltage and at Fixed Current. In 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), Toyama, Japan. https://doi.org/10.1109/edtm47692.2020.9117985 (reposiTUm)

308.		de Orio, R., Ender, J., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V. (2020). Reduced Current Spin-Orbit Torque Switching of a Perpendicularly Magnetized Free Layer. In 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Bologna, Italy. https://doi.org/10.1109/eurosoi-ulis49407.2020.9365283 (reposiTUm)

307.		Sverdlov, V., El-Sayed, A., Selberherr, S. (2020). Subband Structure and Ballistic Conductance of a Molybdenum Disulfide Nanoribbon in Topological 1T' Phase: A K·p Study. In 2020 27th International Conference on Mixed Design of Integrated Circuits and System (MIXDES). https://doi.org/10.23919/mixdes49814.2020.9155676 (reposiTUm)

306.		Sverdlov, V., El-Sayed, A., Selberherr, S. (2020). Subband Structure and Ballistic Conductance of a Molybdenum Disulfide Nanoribbon in Topological 1T’ Phase: A K·p Study. In 2020 27th International Conference on Mixed Design of Integrated Circuits and System (MIXDES), Gdynia, Poland. https://doi.org/10.23919/mixdes49814.2020.9155676 (reposiTUm)

305.		Orio, R., Makarov, A., Goes, W., Ender, J., Fiorentini, S., Selberherr, S., Sverdlov, V. (2020). Switching of a Perpendicularly Magnetized Free-Layer by Spin-Orbit-Torques With Reduced Currents. In Proceedings of the World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI) (pp. 58–61), Orlando, Florida, USA. (reposiTUm)

304.		Sverdlov, V., El-Sayed, A., Selberherr, S., Kosina, H. (2020). Topologically Protected and Conventional Subbands in a 1t'-MoS2 Nanoribbon Channel. In 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS). https://doi.org/10.1109/eurosoi-ulis49407.2020.9365289 (reposiTUm)

303.		Sverdlov, V., Kosina, H. (2020). Topologically Protected and Conventional Subbands in a 1T’ -MoS2 Nanoribbon Channel. In 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Bologna, Italy. https://doi.org/10.1109/eurosoi-ulis49407.2020.9365289 (reposiTUm)

302.		Orio, R., Makarov, A., Ender, J., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V. (2019). A Dynamical Approach to Fast and Reliable External Field Free Perpendicular Magnetization Reversal by Spin-Orbit Torques. In Proceedings of the IEEE International Electron Devices Meeting (IEDM) Special Poster Session Dedicated to MRAM (p. 1), San Francisco, CA, USA, Austria. (reposiTUm)

301.		Sverdlov, V., Selberherr, S. (2019). A Monte Carlo Evaluation of Current and Low Frequency Current Noise at Spin-Dependent Hopping in Magnetic Tunnel Junctions. In Abstracts of the 12th International Conference on Large-Scale Scientific Computations (LSSC 2019) (p. 96), Sozopol, Bulgaria. (reposiTUm)

300.		Sverdlov, V., Selberherr, S. (2019). CMOS Technology Compatible Magnetic Memories. In 2019 8th International Symposium on Next Generation Electronics (ISNE), Taipei, Taiwan. https://doi.org/10.1109/isne.2019.8896421 (reposiTUm)

299.		Sverdlov, V., Selberherr, S. (2019). Combining Perpendicular and Shape Anisotropy for Optimal Switching of Advanced Spin-Orbit Torque Memory Cells. In 2019 Electron Devices Technology and Manufacturing Conference (EDTM), Toyama, Japan. https://doi.org/10.1109/edtm.2019.8731330 (reposiTUm)

298.		Fiorentini, S., Orio, R., Goes, W., Ender, J., Sverdlov, V. (2019). Comprehensive Comparison of Switching Models for Perpendicular Spin-Transfer Torque MRAM Cells. In 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy. https://doi.org/10.1109/sispad.2019.8870359 (reposiTUm)

297.		Fiorentini, S., Orio, R., Selberherr, S., Ender, J., Goes, W., Sverdlov, V. (2019). Comprehensive Modeling of Switching in Perpendicular STT-MRAM. In Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS) (pp. 107–108), Kona. (reposiTUm)

296.		Orio, R., Makarov, A., Selberherr, S., Goes, W., Ender, J., Fiorentini, S., Sverdlov, V. (2019). Efficient Magnetic Field Free Switching of Symmetric Perpendicular Magnetic Free Layer for Advanced SOT-MRAM. In Proceedings of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) (pp. 152–153), Bologna, Italy. (reposiTUm)

295.		de Orio, R., Makarov, A., Selberherr, S., Goes, W., Ender, J., Fiorentini, S., Sverdlov, V. (2019). Efficient Magnetic Field-Free Switching of a Symmetric Perpendicular Magnetic Free Layer for Advanced SOT-MRAM. In 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS). https://doi.org/10.1109/eurosoi-ulis45800.2019.9041920 (reposiTUm)

294.		Sverdlov, V., Selberherr, S. (2019). Hopping in a Multiple Ferromagnetic Terminal Configuration. In Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN 2019) (pp. 75–77), Evanston, IL, United States. (reposiTUm)

293.		Orio, R., Selberherr, S., Sverdlov, V. (2019). Magnetic Field-Free Deterministic Switching of a Perpendicular Magnetic Layer by Spin-Orbit Torques. In Spintronics XII (pp. 110903F-1–110903F-6), San Diego, United States. https://doi.org/10.1117/12.2529119 (reposiTUm)

292.		Orio, R., Makarov, A., Selberherr, S., Gös, W., Ender, J., Fiorentini, S., Sverdlov, V. (2019). Robust Magnetic Field Free Switching Scheme for Perpendicular Free Layer in Advanced Spin Orbit Torque Magnetoresistive Random Access Memory. In Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN 2019) (pp. 69–71), Evanston, IL, United States. (reposiTUm)

291.		Orio, R., Selberherr, S., Ender, J., Fiorentini, S., Goes, W., Sverdlov, V. (2019). Robustness of the Two-Pulse Switching Scheme for SOT-MRAM. In Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS) (pp. 54–55), Kona. (reposiTUm)

290.		Sverdlov, V., Selberherr, S. (2019). Shot Noise in Magnetic Tunnel Junctions. In Proceedings of the World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI) Volume II (pp. 19–22), Orlando, Florida, USA. (reposiTUm)

289.		Sverdlov, V., Selberherr, S. (2019). Spin-Based CMOS-Compatible Memories. In 2019 IEEE 9th International Nanoelectronics Conferences (INEC), Kuching, Malaysia. https://doi.org/10.1109/inec.2019.8853848 (reposiTUm)

288.		Sverdlov, V. (2019). Spin-Based Electronics: Recent Developments and Trends. In Proceedings of the International Conference on Modern Problems in the Physics of Surfaces and Nanostructures (ICMPSN) (p. 7), Yaroslavl, Russia. (reposiTUm)

287.		Sverdlov, V., Selberherr, S. (2019). Spintronic Memories. In Abstracts of the Energy-Materials-Nanotechnology Fall Meeting (EMN) (pp. 19–21), Orlando, USA. (reposiTUm)

286.		de Orio, R., Makarov, A., Selberherr, S., Gös, W., Ender, J., Fiorentini, S., Sverdlov, V. (2019). Switching Speedup of the Magnetic Free Layer of Advanced SOT-MRAM. In ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC), Cracow, Poland. https://doi.org/10.1109/essderc.2019.8901780 (reposiTUm)

285.		Orio, R., Makarov, A., Goes, W., Ender, J., Fiorentini, S., Sverdlov, V. (2019). Two-Pulse Magnetic Field Free Switching Scheme for Advanced Perpendicular SOT-MRAM. In Book of Abstracts of the International Symposium on Hysteresis Modeling and Micromagnetics (HMM) (p. 34), Heraklion, Greece. (reposiTUm)

284.		Sverdlov, V., Selberherr, S. (2018). A Single-Spin Switch. In Conference Abstract Book, Keelung, Taiwan. (reposiTUm)

283.		Sverdlov, V., Selberherr, S. (2018). Actual Problems in the Field of Spintronics. In Proceedings of the Workshop on Applied Mathematics and Simulation for Semiconductors (AMasIS) 2018 (p. 40), Berlin, Germany. (reposiTUm)

282.		Sverdlov, V., Selberherr, S. (2018). Current and Shot Noise at Spin-Dependent Hopping in Magnetic Tunnel Junctions. In Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) (pp. 107–108), Bologna, Italy. (reposiTUm)

281.		Sverdlov, V., Selberherr, S. (2018). Electron Spin for Modern and Future Microelectronics. In Proceedings of the International Conference Micro- and Nanoelectronics (ICMNE) 2018 (p. 7), Moscow-Zvenigorod. (reposiTUm)

280.		Sverdlov, V., Makarov, A., Selberherr, S. (2018). Fast, Reliable, and Field-Free Perpendicular Magnetization Reversal in Advanced Spin-Orbit Torque MRAM by Two-Pulse Switching. In Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS) (pp. 124–125), Kona. (reposiTUm)

279.		Makarov, A., Sverdlov, V., Selberherr, S. (2018). Field-Free Fast Reliable Deterministic Switching in Perpendicular Spin-Orbit Torque MRAM Cells. In 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, TX, United States. https://doi.org/10.1109/sispad.2018.8551716 (reposiTUm)

278.		Sverdlov, V., Makarov, A., Selberherr, S. (2018). Magnetic Field-Free Fast Reliable Switching by Spin-Orbit Torque in Advanced MRAM. In Proceedings of Micromagnetics: Analysis, Numerics, Applications (MANA) 2018 (p. 32), Vienna, Austria. (reposiTUm)

277.		Ghosh, J., Osintsev, D., Sverdlov, V., Ganguly, S. (2018). Multilevel Parallelization Approach to Estimate Spin Lifetime in Silicon: Performance Analysis. In 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS). https://doi.org/10.1109/ulis.2018.8354770 (reposiTUm)

276.		Sverdlov, V., Makarov, A., Selberherr, S. (2018). Reliable Sub-Nanosecond Switching of a Perpendicular SOT-MRAM Cell Without External Magnetic Field. In Proceedings of the 22^nd World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI) (pp. 30–32), Orlando, Florida, USA. (reposiTUm)

275.		Sverdlov, V., Selberherr, S. (2018). Shot Noise Enhancement at Spin-Dependent Hopping. In Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS) (pp. 6–7), Kona. (reposiTUm)

274.		Sverdlov, V., Selberherr, S. (2018). Spin Correlations at Hopping in Magnetic Structures: From Tunneling Magnetoresistance to Single-Spin Transistor. In Spintronics XI (pp. 1073235-1–1073235-8), San Diego, United States. https://doi.org/10.1117/12.2319271 (reposiTUm)

273.		Sverdlov, V., Selberherr, S. (2018). Spin-Dependent Trap-Assisted Tunneling: A Path Towards a Single Spin Switch. In Abstracts Advanced Research Workshop Future Trends in Microelectronics: Vingt Ans Après (p. 49), Sardinia, Italy. (reposiTUm)

272.		Sverdlov, V., Makarov, A., Selberherr, S. (2018). Switching Current Reduction in Advanced Spin-Orbit Torque MRAM. In Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) (pp. 57–58), Bologna, Italy. (reposiTUm)

271.		Makarov, A., Sverdlov, V., Selberherr, S. (2018). Two-Pulse Sub-Ns Switching of a Perpendicular Spin-Orbit Torque MRAM Cell Without External Magnetic Field. In Abstracts Advanced Research Workshop Future Trends in Microelectronics: Vingt Ans Après (p. 51), Sardinia, Italy. (reposiTUm)

270.		Makarov, A., Sverdlov, V., Selberherr, S. (2018). Ultra-Fast Switching of a Free Magnetic Layer With Out-Of-Plane Magnetization in Spin-Orbit Torque MRAM Cells. In Proceedings of the 233^rd ECS Meeting (ECS), Seattle, Washington, USA. (reposiTUm)

269.		Sverdlov, V., Selberherr, S. (2017). A Single-Spin Switch. In Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS) (pp. 93–94), Kona. (reposiTUm)

268.		Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S. (2017). Analysis of a Spin-Transfer Torque Based Copy Operation of a Buffered Magnetic Processing Environment. In Proceedings of the 21^st World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI) (pp. 142–146), Orlando, Florida, USA. (reposiTUm)

267.		Sverdlov, V., Weinbub, J., Selberherr, S. (2017). Current in Magnetic Tunnel Junctions at Spin-Dependent Hopping. In Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS) (pp. 87–88), Kona. (reposiTUm)

266.		Sverdlov, V., Weinbub, J., Selberherr, S. (2017). Electron Spin at Work in Modern and Emerging Devices. In Abstracts of the Energy-Materials-Nanotechnology Meeting on Quantum (EMN) (pp. 31–33), Wien, Austria, Austria. (reposiTUm)

265.		Sverdlov, V., Weinbub, J., Selberherr, S. (2017). Enhanced Shot Noise as a Signature of Trap-Assisted Tunneling in Magnetic Tunnel Junctions: A Monte Carlo Approach. In Proceedings of the 25^th International Symposium on Nanostructures: Physics and Technology (pp. 132–133), Sankt Petersburg, Russland. (reposiTUm)

264.		Selberherr, S., Windbacher, T., Makarov, A., Sverdlov, V. (2017). Exploiting Spin-Transfer Torque for Non-Volatile Computing. In Book of Abstracts of BIT's 3^rd Annual World Congress of Smart Materials-2017 (p. 130), Singapore. (reposiTUm)

263.		Sverdlov, V., Mahmoudi, H., Windbacher, T., Makarov, A., Weinbub, J., Selberherr, S. (2017). MTJs - Spin-Based Binary Memristors for Non-Volatile Memory and Logic Applications. In Abstracts of the Energy-Materials-Nanotechnology Meeting on Memristive Switching, Network (EMN) (pp. 33–34), Milan, Italy. (reposiTUm)

262.		Sverdlov, V., Weinbub, J., Selberherr, S. (2017). Modeling Spin-Dependent Phenomena for New Device Applications. In CSE17 Abstracts (pp. 45–46), Atlanta, GA, USA. (reposiTUm)

261.		Sverdlov, V., Makarov, A., Weinbub, J., Selberherr, S. (2017). Non-Volatility by Spin in Modern Nanoelectronics. In 2017 IEEE 30th International Conference on Microelectronics (MIEL), Beograd. https://doi.org/10.1109/miel.2017.8190061 (reposiTUm)

260.		Sverdlov, V., Selberherr, S. (2017). Shot Noise at Spin-Dependent Hopping in Tunnel Junctions With Ferromagnetic Electrodes. In Bulletin of the APS April Meeting 2017, Los Angeles/USA, Austria. (reposiTUm)

259.		Sverdlov, V., Weinbub, J., Selberherr, S. (2017). Spin-Based Non-Volatile Memory and Logic in Modern Nanoelectronics. In Abstracts of the BIT's 7^th Annual World Congress of Nano Science, Technology-2017 (p. 343), Xi'an, China. (reposiTUm)

258.		Sverdlov, V., Weinbub, J., Selberherr, S. (2017). Spin-Dependent Trap-Assisted Tunneling in Magnetic Tunnel Junctions: A Monte Carlo Study. In Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN 2017) (pp. 88–90), Windermere, United Kingdom. (reposiTUm)

257.		Sverdlov, V., Weinbub, J., Selberherr, S. (2017). Spintronics as a Non-Volatile Complement to Nanoelectronics. In Proceedings of the 53^rd International Conference on Microelectronics, Devices and Materials (MIDEM 2017) (p. 10), Ljubljana, Slovenia. (reposiTUm)

256.		Sverdlov, V., Selberherr, S. (2016). Effects of Spin Relaxation on Trap-Assisted Tunneling Through Ferromagnetic Metal-Oxide-Semiconductor Structures. In Bulletin of the American Physical Society (APS March Meeting) (p. 1), Los Angeles/USA, Austria. (reposiTUm)

255.		Sverdlov, V., Selberherr, S. (2016). Influence of Spin Relaxation on Trap-Assisted Resonant Tunneling in Ferromagnet-Oxide-Semiconductor Structures. In 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS). https://doi.org/10.1109/ulis.2016.7440088 (reposiTUm)

254.		Windbacher, T., Malm, B., Sverdlov, V., Östling, M., Selberherr, S. (2016). Influence of the Free Layer Alignment on the Reliability of a Non-Volatile Magnetic Shift Register. In Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS) (p. 43), Kona. (reposiTUm)

253.		Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S. (2016). Layer Coupling and Read Disturbances in a Buffered Magnetic Logic Environment. In Spintronics IX (pp. 99312M-1–99312M-12), San Diego, United States. https://doi.org/10.1117/12.2236151 (reposiTUm)

252.		Windbacher, T., Mahmoudi, H., Makarov, A., Sverdlov, V., Selberherr, S. (2016). Logic-In-Memory: A Non-Volatile Processing Environment for the Post CMOS Age. In Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nürnberg, Germany. (reposiTUm)

251.		Windbacher, T., Sverdlov, V., Selberherr, S. (2016). Magnetic Nonvolatile Processing Environment. In Program and Abstracts of the I International Scientific and Practical Conference Innovation in the Software Systems of Trains (pp. 42–43), Samara, Russia. (reposiTUm)

250.		Sverdlov, V., Makarov, A., Windbacher, T., Selberherr, S. (2016). Magnetic Field Dependent Tunneling Magnetoresistance Through a Quantum Well Between Ferromagnetic Contacts. In 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nuremberg, Germany. https://doi.org/10.1109/sispad.2016.7605210 (reposiTUm)

249.		Sverdlov, V., Ghosh, J., Makarov, A., Windbacher, T., Selberherr, S. (2016). Nanoelectronics With Spin. In Book of Abstracts of the World Congress and Expo on Nanotechnology and Materials Science (pp. 19–20), Dubai, United Arab Emirates. (reposiTUm)

248.		Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S. (2016). Novel Magnetic Devices for Memory and Non-Volatile Computing Applications. In 2016 Conference Program of the Emerging Technologies Communication Microsystems Optoelectronics Sensing (ETCMOS) (p. 14), Montreal, QC, Canada. (reposiTUm)

247.		Makarov, A., Sverdlov, V., Windbacher, T., Selberherr, S. (2016). Silicon Spintronics. In Proceedings of the ICEM 2016 (p. 1), Singapur. (reposiTUm)

246.		Sverdlov, V., Selberherr, S. (2016). Spin-Dependent Resonant Tunneling in Ferromagnet-Oxide-Silicon Structures. In Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) (pp. 116–117), Bologna, Italy. (reposiTUm)

245.		Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S. (2016). The Exploitation of Magnetization Orientation Encoded Spin-Transfer Torque for an Ultra Dense Non-Volatile Magnetic Shift Register. In 2016 46th European Solid-State Device Research Conference (ESSDERC), Montreux, Austria. https://doi.org/10.1109/essderc.2016.7599648 (reposiTUm)

244.		Sverdlov, V., Ghosh, J., Selberherr, S. (2016). Universal Dependence of the Spin Lifetime in Silicon Films on the Spin Injection Direction. In Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS) (p. 7), Kona. (reposiTUm)

243.		Makarov, A., Windbacher, T., Sverdlov, V., Selberherr, S. (2015). A Novel Method of SOT-MRAM Switching. In Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN), Kaanapali. (reposiTUm)

242.		Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S. (2015). A Universal Nonvolatile Processing Environment. In Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Journey into the Unknown (p. 62), Mallorca, Spain. (reposiTUm)

241.		Sverdlov, V., Ghosh, J., Makarov, A., Windbacher, T., Selberherr, S. (2015). CMOS-compatible Spintronic Devices. In 2015 30th Symposium on Microelectronics Technology and Devices (SBMicro), Brasilia, Brazil. https://doi.org/10.1109/sbmicro.2015.7298103 (reposiTUm)

240.		Makarov, A., Windbacher, T., Sverdlov, V., Selberherr, S. (2015). Concept of a SOT-MRAM Based on 1Transistor-1mtj-Cell Structure. In Extended Abstracts of the International Conference on Solid State Devices and Materials (SSDM) (pp. 140–141), Fukuoka, Japan. (reposiTUm)

239.		Ghosh, J., Osintsev, D., Sverdlov, V., Selberherr, S. (2015). Dependence of Spin Lifetime on Spin Injection Orientation in Strained Silicon Films. In EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Bologna, Italy. https://doi.org/10.1109/ulis.2015.7063829 (reposiTUm)

238.		Makarov, A., Windbacher, T., Sverdlov, V., Selberherr, S. (2015). Efficient High-Frequency Spin-Torque Oscillators Composed of Two Three-Layer MgO-MTJs With a Common Free Layer. In Proceedings of 21st Iberchip Worshop, Montevideo, Uruguay. (reposiTUm)

237.		Sverdlov, V., Ghosh, J., Osintsev, D., Selberherr, S. (2015). Electron Spin Lifetime Enhancement by Shear Strain in Thin Silicon Films. In Book of Abstracts of the 2015 CMOS Emerging Technologies Research Symposium (CMOSETR) (p. 58), Vancouver, BC, Canada. (reposiTUm)

236.		Ghosh, J., Osintsev, D., Sverdlov, V., Selberherr, S. (2015). Evaluation of Spin Lifetime in Thin Silicon Films by Multilevel Parallelization. In Proceedings of the nanoHUB User Conference (p. 1), West Lafayette, Indiana, USA. (reposiTUm)

235.		Ghosh, J., Osintsev, D., Sverdlov, V., Weinbub, J., Selberherr, S. (2015). Evaluation of Spin Lifetime in Thin-Body FETs: A High Performance Computing Approach. In Large-Scale Scientific Computing 10th International Conference, LSSC 2015 (pp. 285–292), Sozopol, Bulgaria. https://doi.org/10.1007/978-3-319-26520-9_31 (reposiTUm)

234.		Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S. (2015). Improving the Performance of a Non-Volatile Magnetic Flip Flop by Exploiting the Spin Hall Effect. In 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington, DC, United States. https://doi.org/10.1109/sispad.2015.7292357 (reposiTUm)

233.		Ghosh, J., Osintsev, D., Sverdlov, V., Selberherr, S. (2015). Increase of Surface Roughness and Phonon Scattering Mediated Spin Lifetime in Thin Strained SOI Film. In Book of Abstracts of the 2015 E-MRS Fall Meeting (p. 1), Strasbourg, France. (reposiTUm)

232.		Ghosh, J., Sverdlov, V., Selberherr, S. (2015). Increment of Spin Lifetime by Spin Injection Orientation in Stressed Thin SOI Films. In Program and Abstract Book of the 8th International School, Conference on Spintronics and Quantum Information Technology (p. 130), Cracow. (reposiTUm)

231.		Ghosh, J., Sverdlov, V., Selberherr, S. (2015). Influence of Valley Splitting on Spin Relaxation Time in a Strained Thin Silicon Film. In 2015 International Workshop on Computational Electronics (IWCE), Urbana-Champaign, IL, USA. https://doi.org/10.1109/iwce.2015.7301961 (reposiTUm)

230.		Ghosh, J., Osintsev, D., Sverdlov, V., Selberherr, S. (2015). Injection Direction Sensitive Spin Lifetime Model in a Strained Thin Silicon Film. In 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington, DC, United States. https://doi.org/10.1109/sispad.2015.7292313 (reposiTUm)

229.		Ghosh, J., Osintsev, D., Sverdlov, V., Selberherr, S. (2015). Intersubband Spin Relaxation Reduction and Spin Lifetime Enhancement by Strain in SOI Structures. In Book of Abstracts 19th Conference on Insulating Films on Semiconductors (pp. 235–236), Cracow, Poland. (reposiTUm)

228.		Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S. (2015). Novel Buffered Magnetic Logic Gate Grid. In Proceedings of the 227th ECS Meeting (ECS) (p. 2), Honolulu, Austria. (reposiTUm)

227.		Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S. (2015). Novel Spintronic Devices for Embedded Spin-Based Memories and Non-Volatile Computing. In Abstracts of the Energy-Materials-Nanotechnology Fall Meeting (EMN) (pp. 15–16), Orlando, USA. (reposiTUm)

226.		Makarov, A., Windbacher, T., Sverdlov, V., Selberherr, S. (2015). SOT-MRAM Based on 1Transistor-1mtj-Cell Structure. In Technical Digest of the Non-Volatile Memory Technology Symposium (NVMTS) (pp. 105–106), Beijing, China. (reposiTUm)

225.		Makarov, A., Windbacher, T., Sverdlov, V., Selberherr, S. (2015). SOT-MRAM Based on 1Transistor-1mtj-Cell Structure. In 2015 15th Non-Volatile Memory Technology Symposium (NVMTS). https://doi.org/10.1109/nvmts.2015.7457479 (reposiTUm)

224.		Sverdlov, V., Ghosh, J., Makarov, A., Windbacher, T., Selberherr, S. (2015). Silicon Spintronics. In Conference Abstracts, NATO Advanced Research Workshop "Functional Nanomaterials and Devices for Electronics, Sensors, Energy Harvesting" (pp. 44–45), Lviv, Ukrain. (reposiTUm)

223.		Sverdlov, V., Ghosh, J., Makarov, A., Windbacher, T., Selberherr, S. (2015). Silicon Spintronics: Recent Advances and Challenges. In Proceedings of the 2015 International Conference and School for Young Scientists Information Technology and Nanotechnology (ITNT) (pp. 6–7), Samara, Russia. (reposiTUm)

222.		Sverdlov, V., Ghosh, J., Makarov, A., Windbacher, T., Selberherr, S. (2015). Silicon and CMOS-Compatible Spintronics. In Proceedings of the International Conference on Applied Physics, Simulation and Computers (APSAC 2015) (pp. 17–20), Vienna, Austria, Austria. (reposiTUm)

221.		Ghosh, J., Osintsev, D., Sverdlov, V., Selberherr, S. (2015). Spin Lifetime Dependence on Spin Injection Orientation in Strained Silicon Films. In Bulletin of the American Physical Society (APS March Meeting), Los Angeles/USA, Austria. (reposiTUm)

220.		Ghosh, J., Osintsev, D., Sverdlov, V., Selberherr, S. (2015). Spin Lifetime Dependence on Valley Splitting in Thin Silicon Films. In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 35–36), Urbana-Champaign, IL, USA. (reposiTUm)

219.		Osintsev, D., Ghosh, J., Sverdlov, V., Weinbub, J., Selberherr, S. (2015). Spin Lifetime in MOSFETs: A High Performance Computing Approach. In Abstracts International Conference on Large-Scale Scientific Computations (LSSC) (pp. 60–61), Sozopol, Bulgaria. (reposiTUm)

218.		Sverdlov, V., Selberherr, S. (2015). Spin-Based CMOS-Compatible Devices. In Abstracts International Conference on Large-Scale Scientific Computations (LSSC) (p. 69), Sozopol, Bulgaria. (reposiTUm)

217.		Sverdlov, V., Selberherr, S. (2015). Spin-Based Silicon and CMOS-Compatible Devices. In Proceedings of the 227th ECS Meeting (ECS) (p. 2), Honolulu, Austria. (reposiTUm)

216.		Sverdlov, V., Ghosh, J., Makarov, A., Windbacher, T., Selberherr, S. (2015). Spin-Driven Applications of Silicon and CMOS-Compatible Devices. In Abstracts of the BIT's 5^th Annual Congress of Nano Science, Technology-2015 (p. 175), Xi'an, China. (reposiTUm)

215.		Sverdlov, V., Selberherr, S. (2015). Spin-Based Devices for Future Microelectronics. In 2015 International Symposium on Next-Generation Electronics (ISNE), Taipei, Taiwan. https://doi.org/10.1109/isne.2015.7132030 (reposiTUm)

214.		Sverdlov, V., Selberherr, S. (2015). Spin-Dependent Trap-Assisted Tunneling Including Spin Relaxation at Room Temperature. In Program and Abstract Book of the 8th International School, Conference on Spintronics and Quantum Information Technology (p. 114), Cracow. (reposiTUm)

213.		Sverdlov, V., Selberherr, S. (2015). Spin-Dependent Trap-Assisted Tunneling in Ferromagnet-Oxide-Semiconductor Structures. In Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN), Kaanapali. (reposiTUm)

212.		Sverdlov, V., Osintsev, D., Ghosh, J., Selberherr, S. (2015). Strained Silicon-On-Insulator for Spintronic Applications: Giant Spin Lifetime Enhancement. In Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Journey into the Unknown (p. 63), Mallorca, Spain. (reposiTUm)

211.		Ghosh, J., Osintsev, D., Sverdlov, V., Selberherr, S. (2015). Variation of Spin Lifetime With Spin Injection Orientation in Strained Thin Silicon Films. In Proceedings of the 227th ECS Meeting (ECS) (p. 2), Honolulu, Austria. (reposiTUm)

210.		Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S. (2014). Compact Modeling of Memristive IMP Gates for Reliable Stateful Logic Design. In Proceedings of the 21st International Conference on Mixed Design of Integrated Circuits and Systems (p. 26), Gdynia, Poland. (reposiTUm)

209.		Makarov, A., Sverdlov, V., Selberherr, S. (2014). Composite Magnetic Tunnel Junctions for Fast Memory Devices and Efficient Spin-Torque Nano-Oscillators. In Future Information Engineering. https://doi.org/10.2495/icie130451 (reposiTUm)

208.		Sverdlov, V., Osintsev, D., Selberherr, S. (2014). Electron Momentum and Spin Relaxation in Silicon Films: A Rigorous K P-Based Approach. In Abstracts of The 18th European Conference on Mathematics for Industry (pp. 454–456), Taormina, Italy. (reposiTUm)

207.		Windbacher, T., Makarov, A., Mahmoudi, H., Sverdlov, V., Selberherr, S. (2014). Frequency Dependence Study of a Bias Field-Free Nano-Scale Oscillator. In 2014 International Workshop on Computational Electronics (IWCE). https://doi.org/10.1109/iwce.2014.6865862 (reposiTUm)

206.		Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S. (2014). High Performance MRAM-based Stateful Logic. In 2014 15th International Conference on Ultimate Integration on Silicon (ULIS), Bologna, Austria. https://doi.org/10.1109/ulis.2014.6813912 (reposiTUm)

205.		Osintsev, D., Sverdlov, V., Selberherr, S. (2014). Increasing Mobility and Spin Lifetime With Shear Strain in Thin Silicon Films. In Conference Proceedings of the Tenth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits (pp. 1–2), Granada, Austria. (reposiTUm)

204.		Osintsev, D., Sverdlov, V., Windbacher, T., Selberherr, S. (2014). Increasing Mobility and Spin Lifetime With Shear Strain in Thin Silicon Films. In 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan. https://doi.org/10.1109/sispad.2014.6931596 (reposiTUm)

203.		Windbacher, T., Mahmoudi, H., Sverdlov, V., Selberherr, S. (2014). Influence of Device Geometry on the Non-Volatile Magnetic Flip Flop Characteristics. In 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan. https://doi.org/10.1109/sispad.2014.6931622 (reposiTUm)

202.		Windbacher, T., Mahmoudi, H., Sverdlov, V., Selberherr, S. (2014). Influence of Magnetization Variations in the Free Layer on a Non-Volatile Magnetic Flip Flop. In 2014 15th International Conference on Ultimate Integration on Silicon (ULIS), Bologna, Austria. https://doi.org/10.1109/ulis.2014.6813893 (reposiTUm)

201.		Sverdlov, V., Mahmoudi, H., Makarov, A., Windbacher, T., Selberherr, S. (2014). Magnetic Tunnel Junctions for Future Memory and Logic-In-Memory Applications. In Proceedings of the 21st International Conference on Mixed Design of Integrated Circuits and Systems (p. 17), Gdynia, Poland. (reposiTUm)

200.		Makarov, A., Windbacher, T., Sverdlov, V., Selberherr, S. (2014). Micromagnetic Modeling of a Bias-Field-Free Spin-Torque Oscillator Based on Two MgO-MTJs With a Shared Free Layer. In Book of Abstracts (p. 166), Vienna, Austria. (reposiTUm)

199.		Osintsev, D., Sverdlov, V., Selberherr, S. (2014). Mobility and Spin Lifetime Enhancement in Thin Silicon Films by Shear Strain. In Bulletin of the American Physical Society (APS March Meeting) (p. 1), Los Angeles/USA, Austria. (reposiTUm)

198.		Sverdlov, V., Ghosh, J., Osintsev, D., Selberherr, S. (2014). Modeling Silicon Spintronics. In Abstracts 2014 (p. 78), Saint-Petersburg, Russia. (reposiTUm)

197.		Makarov, A., Osintsev, D., Sverdlov, V., Selberherr, S. (2014). Modeling Spin-Based Electronic Devices. In Book of Abstracts (p. 1), Phoenix, USA. (reposiTUm)

196.		Sverdlov, V., Ghosh, J., Mahmoudi, H., Makarov, A., Osintsev, D., Windbacher, T., Selberherr, S. (2014). Modeling of Spin-Based Silicon Technology. In 2014 15th International Conference on Ultimate Integration on Silicon (ULIS), Bologna, Austria. https://doi.org/10.1109/ulis.2014.6813891 (reposiTUm)

195.		Sverdlov, V., Ghosh, J., Mahmoudi, H., Makarov, A., Osintsev, D., Windbacher, T., Selberherr, S. (2014). Modeling Spin-Based Electronic Devices. In 2014 29th International Conference on Microelectronics Proceedings - MIEL 2014, Beograd. https://doi.org/10.1109/miel.2014.6842081 (reposiTUm)

194.		Makarov, A., Windbacher, T., Sverdlov, V., Selberherr, S. (2014). New Design of Spin-Torque Nano-Oscillators. In Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS) (p. 63), Kona. (reposiTUm)

193.		Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S. (2014). Pushing a Non-Volatile Magnetic Device Structure Towards a Universal CMOS Logic Replacement. In Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS) (p. 62), Kona. (reposiTUm)

192.		Sverdlov, V., Osintsev, D., Selberherr, S. (2014). Spin Behaviour in Strained Silicon Films. In Abstracts of E-MRS Fall Meeting (p. 1), Warsaw, Poland. (reposiTUm)

191.		Ghosh, J., Sverdlov, V., Selberherr, S. (2014). Spin Diffusion and the Role of Screening Effects in Semiconductors. In 2014 International Workshop on Computational Electronics (IWCE). https://doi.org/10.1109/iwce.2014.6865825 (reposiTUm)

190.		Ghosh, J., Sverdlov, V., Selberherr, S. (2014). Spin Diffusion in Silicon From a Ferromagnetic Contact. In Book of Abstracts (p. 165), Vienna, Austria. (reposiTUm)

189.		Ghosh, J., Sverdlov, V., Selberherr, S. (2014). Spin Injection in Silicon: The Role of Screening Effects. In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 63–64), Urbana-Champaign, IL, USA. (reposiTUm)

188.		Sverdlov, V., Osintsev, D., Selberherr, S. (2014). Spin Lifetime in Strained Silicon Films. In 7th International Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 (pp. 57–58), Singapore, Singapore. https://doi.org/10.1109/ISTDM.2014.6874695 (reposiTUm)

187.		Sverdlov, V., Makarov, A., Selberherr, S. (2014). Structural Optimization of MTJs for STT-MRAM and Oscillator Applications. In Abstracts: 2014 CMOS Emerging Technologies Research Symposium (p. 19), Whistler, BC, Canada. (reposiTUm)

186.		Osintsev, D., Sverdlov, V., Selberherr, S. (2014). Valley Degeneracy and Spin Lifetime Enhancement in Stressed Silicon Films. In Book of Abstracts (p. 1), Washington, D.C., USA. (reposiTUm)

185.		Osintsev, D., Sverdlov, V., Neophytou, N., Selberherr, S. (2014). Valley Splitting and Spin Lifetime Enhancement in Strained Silicon Heterostructures. In Proceedings of International Winterschool on New Developments in Solid State Physics (pp. 88–89), Mauterndorf, Austria, Austria. (reposiTUm)

184.		Osintsev, D., Sverdlov, V., Neophytou, N., Selberherr, S. (2014). Valley Splitting and Spin Lifetime Enhancement in Ultra-Scaled MOSFETs. In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 59–60), Urbana-Champaign, IL, USA. (reposiTUm)

183.		Osintsev, D., Sverdlov, V., Neophytou, N., Selberherr, S. (2014). Valley Splitting and Spin Lifetime Enhancement in in Strained Thin Silicon Films. In 2014 International Workshop on Computational Electronics (IWCE). https://doi.org/10.1109/iwce.2014.6865824 (reposiTUm)

182.		Makarov, A., Sverdlov, V., Selberherr, S. (2013). Bias-Field-Free Spin-Torque Oscillator Based on Two MgO-MTJs With a Shared Free Layer: Micromagnetic Modeling. In Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN) (p. 2), Kaanapali. (reposiTUm)

181.		Osintsev, D., Sverdlov, V., Selberherr, S. (2013). Calculation of the Electron Mobility and Spin Lifetime Enhancement by Strain in Thin Silicon Films. In Proceedings of the 21st International Symposium Nanostructures (pp. 69–70), St. Petersburg, Russian federation. (reposiTUm)

180.		Makarov, A., Sverdlov, V., Selberherr, S. (2013). Composite Magnetic Tunnel Junctions for Fast Memory Devices and Efficient Spin-Torque Nano-Oscillators. In Abstracts Intl.Conf.on Information Engineering (ICIE) (p. 7), Hong Kong. (reposiTUm)

179.		Makarov, A., Sverdlov, V., Selberherr, S. (2013). Concept of a Bias-Field-Free Spin-Torque Oscillator Based on Two MgO-MTJs. In Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials (SSDM 2013) (pp. 796–797), Tsukuba, Austria. (reposiTUm)

178.		Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S. (2013). Design and Applications of Magnetic Tunnel Junction Based Logic Circuits. In Proceedings of the 2013 9th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), Villach, Austria. https://doi.org/10.1109/prime.2013.6603122 (reposiTUm)

177.		Osintsev, D., Sverdlov, V., Selberherr, S. (2013). Enhanced Intervalley Splitting and Reduced Spin Relaxation in Strained Thin Silicon Films. In Bulletin American Physical Society (APS March Meeting) (p. 1), Los Angeles/USA, Austria. (reposiTUm)

176.		Osintsev, D., Sverdlov, V., Selberherr, S. (2013). Evaluation of Spin Lifetime in Strained UT2B Silicon-On-Insulator MOSFETs. In 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, United Kingdom. https://doi.org/10.1109/sispad.2013.6650618 (reposiTUm)

175.		Makarov, A., Sverdlov, V., Selberherr, S. (2013). Fast Switching STT-MRAM Cells for Future Universal Memory. In Abstracts Advanced Workshop on Frontiers in Electronics (WOFE) (p. 1), San Juan, Puerto Rico. (reposiTUm)

174.		Makarov, A., Sverdlov, V., Selberherr, S. (2013). Geometry Optimization of Spin-Torque Oscillators Composed of Two MgO-MTJs With a Shared Free Layer. In Proceedings of the International Conference on Nanoscale Magnetism (p. 69), Istanbul, Turkey. (reposiTUm)

173.		Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S. (2013). Impact of Device Parameters on the Reliability of the Magnetic Tunnel Junction Based Implication Logic Gates. In Proceedings of the 7th International Workshop "Functional Nanomaterials and Devices" (pp. 68–69), Kyiv, Ukraine. (reposiTUm)

172.		Osintsev, D., Sverdlov, V., Selberherr, S. (2013). Influence of Surface Roughness Scattering on Spin Lifetime in Silicon. In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 76–77), Urbana-Champaign, IL, USA. (reposiTUm)

171.		Ghosh, J., Sverdlov, V., Selberherr, S. (2013). Influence of a Space Charge Region on Spin Transport in Semiconductor. In Abstracts International Semiconductor Device Research Symposium (ISDRS) (p. 27), College Park, MD, USA. (reposiTUm)

170.		Osintsev, D., Sverdlov, V., Selberherr, S. (2013). Influence of the Valley Degeneracy on Spin Relaxation in Thin Silicon Films. In 2013 14th International Conference on Ultimate Integration on Silicon (ULIS), Bologna, Austria. https://doi.org/10.1109/ulis.2013.6523525 (reposiTUm)

169.		Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S. (2013). MRAM-based Logic Array for Large-Scale Non-Volatile Logic-In-Memory Applications. In 2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), New York City, USA. https://doi.org/10.1109/nanoarch.2013.6623033 (reposiTUm)

168.		Makarov, A., Sverdlov, V., Selberherr, S. (2013). Magnetic Oscillation of the Transverse Domain Wall in a Penta-Layer MgO-MTJ. In Proceedings of the 21st International Symposium Nanostructures (pp. 338–339), St. Petersburg, Russian federation. (reposiTUm)

167.		Sverdlov, V., Mahmoudi, H., Makarov, A., Osintsev, D., Weinbub, J., Windbacher, T., Selberherr, S. (2013). Modeling Spin-Based Devices in Silicon. In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 70–71), Urbana-Champaign, IL, USA. (reposiTUm)

166.		Windbacher, T., Makarov, A., Mahmoudi, H., Sverdlov, V., Selberherr, S. (2013). Novel Bias-Field-Free Large Gain Spin-Transfer Oscillator. In Abstract Book of 58th Annual Conference of Magnetism and Magnetic Materials (MMM) (pp. 456–457), San Jose, CA, USA. (reposiTUm)

165.		Windbacher, T., Mahmoudi, H., Sverdlov, V., Selberherr, S. (2013). Novel MTJ-based Shift Register for Non-Volatile Logic Applications. In 2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), New York City, USA. https://doi.org/10.1109/nanoarch.2013.6623038 (reposiTUm)

164.		Windbacher, T., Mahmoudi, H., Sverdlov, V., Selberherr, S. (2013). Novel Non-Volatile Magnetic Flip Flop. In In Proceedings of Seventh International School on Spintronics and Quantum Information Technology (p. 1), Cracow. (reposiTUm)

163.		Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S. (2013). Optimization of Spin-Transfer Torque Magnetic Tunnel Junction-Based Logic Gates. In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 244–245), Urbana-Champaign, IL, USA. (reposiTUm)

162.		Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S. (2013). Performance Analysis and Comparison of Two 1t/1mtj-Based Logic Gates. In 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, United Kingdom. https://doi.org/10.1109/sispad.2013.6650600 (reposiTUm)

161.		Osintsev, D., Sverdlov, V., Selberherr, S. (2013). Reduction of Momentum and Spin Relaxation Rate in Strained Thin Silicon Films. In 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC), Montreux, Austria. https://doi.org/10.1109/essderc.2013.6818886 (reposiTUm)

160.		Osintsev, D., Sverdlov, V., Selberherr, S. (2013). Reduction of the Surface Roughness Induced Spin Relaxation in SOI Structures: An Analytical Approach. In Conference Proceedings of the Ninth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits (p. 1), Granadea, Spanien, Austria. (reposiTUm)

159.		Windbacher, T., Mahmoudi, H., Sverdlov, V., Selberherr, S. (2013). Rigorous Simulation Study of a Novel Non-Volatile Magnetic Flip-Flop. In 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, United Kingdom. https://doi.org/10.1109/sispad.2013.6650651 (reposiTUm)

158.		Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S. (2013). STT-MRAM-Based Reprogrammable Logic Gates for Large-Scale Non-Volatile Logic Integration. In Proceedings of the International Conference on Nanoscale Magnetism (p. 208), Istanbul, Turkey. (reposiTUm)

157.		Mahmoudi, H., Windbacher, T., Sverdlov, V., Selberherr, S. (2013). STT-MTJ-Based Implication Logic Circuits for Non-Volatile Logic-In-Memory Applications. In Book of Abstracts of the 2013 Symposium on CMOS Emerging Technologies (CMOS ET 2013) (p. 1), Whistler, BC, Canada. (reposiTUm)

156.		Osintsev, D., Sverdlov, V., Selberherr, S. (2013). Shear Strain: An Efficient Spin Lifetime Booster in Advanced UTB2 SOI MOSFETs. In Proceedings of the 7th International Workshop "Functional Nanomaterials and Devices" (pp. 64–65), Kyiv, Ukraine. (reposiTUm)

155.		Sverdlov, V., Selberherr, S. (2013). Silicon Spintronics and Its Applications. In Proceedings of the 7th International Workshop "Functional Nanomaterials and Devices" (pp. 51–52), Kyiv, Ukraine. (reposiTUm)

154.		Makarov, A., Sverdlov, V., Osintsev, D., Selberherr, S. (2013). Simulation of Magnetic Oscillations in a System of Two MTJs With a Shared Free Layer. In Abstracts Book of The 21st International Conference on Soft Magnetic Materials (p. 101), Turin, Italy. (reposiTUm)

153.		Ghosh, J., Windbacher, T., Sverdlov, V., Selberherr, S. (2013). Spin Injection and Diffusion in Silicon Based Devices From a Space Charge Layer. In Abstract Book of 58th Annual Conference of Magnetism and Magnetic Materials (MMM) (pp. 713–714), San Jose, CA, USA. (reposiTUm)

152.		Osintsev, D., Sverdlov, V., Selberherr, S. (2013). Spin Lifetime Enhancement by Shear Strain in Thin Silicon-On-Insulator Films. In 223^th ECS Meeting (p. 1), Montreal. (reposiTUm)

151.		Osintsev, D., Sverdlov, V., Selberherr, S. (2013). Spin Lifetime Enhancement in Strained Thin Silicon Films. In Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN) (p. 2), Kaanapali. (reposiTUm)

150.		Makarov, A., Sverdlov, V., Selberherr, S. (2013). Structural Optimization of MTJs With a Composite Free Layer. In Spintronics VI (pp. 88132Q-1–88132Q-9), San Diego, United States. https://doi.org/10.1117/12.2025568 (reposiTUm)

149.		Windbacher, T., Triebl, O., Osintsev, D., Makarov, A., Sverdlov, V., Selberherr, S. (2013). Switching Optimization of an Electrically Read- And Writable Magnetic Logic Gate. In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 238–239), Urbana-Champaign, IL, USA. (reposiTUm)

148.		Makarov, A., Sverdlov, V., Selberherr, S. (2013). Transverse Domain Wall Formation in a Free Layer: A Mechanism for Switching Failure in a MTJ-based STT-MRAM. In Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore. https://doi.org/10.1109/ipfa.2013.6599165 (reposiTUm)

147.		Osintsev, D., Makarov, A., Sverdlov, V., Selberherr, S. (2013). Using Strain to Increase the Reliability of Scaled Spin MOSFETs. In Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore. https://doi.org/10.1109/ipfa.2013.6599272 (reposiTUm)

146.		Mahmoudi, H., Sverdlov, V., Selberherr, S. (2012). A Robust and Efficient MTJ-based Spintronic IMP Gate for New Logic Circuits and Large-Scale Integration. In 2012 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 225–228), Denver, Colorado, United States. (reposiTUm)

145.		Osintsev, D., Makarov, A., Sverdlov, V., Selberherr, S. (2012). Efficient Simulations of the Transport Properties of Spin Field-Effect Transistors Built on Silicon Fins. In Large-Scale Scientific Computing: 8th International Conference, LSSC 2011 (pp. 630–637), Sozopol, Bulgaria. https://doi.org/10.1007/978-3-642-29843-1_72 (reposiTUm)

144.		Osintsev, D., Baumgartner, O., Stanojevic, Z., Sverdlov, V., Selberherr, S. (2012). Electric Field and Strain Effects on Surface Roughness Induced Spin Relaxation in Silicon Field-Effect Transistors. In Proceedings of the 24th European Modeling and Simulation Symposium (pp. 156–162), Vienna, Austria, Austria. (reposiTUm)

143.		Makarov, A., Selberherr, S., Sverdlov, V. (2012). Emerging Non-Volatile Memories for Ultra-Low Power Applications. In Tagungsband zur Informationstagung Mikroelektronik 12 (pp. 21–24), Vienna, Austria. (reposiTUm)

142.		Sverdlov, V., Makarov, A., Selberherr, S. (2012). Fast Switching in MTJs With a Composite Free Layer. In Abstracts of BIT's 2nd Annual World Congress of Nanoscience and Nanotechnology 2012 (p. 291), Qingdao, China. (reposiTUm)

141.		Windbacher, T., Osintsev, D., Makarov, A., Sverdlov, V., Selberherr, S. (2012). Fully Electrically Read- Write Magneto Logic Gates. In Book of Abstracts (p. 1), Crete, Greece. (reposiTUm)

140.		Makarov, A., Sverdlov, V., Selberherr, S. (2012). Geometry Dependence of the Switching Time in MTJs With a Composite Free Layer. In Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS) (p. 21), Kona. (reposiTUm)

139.		Makarov, A., Sverdlov, V., Selberherr, S. (2012). High Thermal Stability and Low Switching Energy Barrier in Spin-Transfer Torque RAM With Composite Free Layer. In Extended Abstracts of 2012 International Conference on Solid State Devices and Materials (p. 2), Nagoya, Japan. (reposiTUm)

138.		Mahmoudi, H., Sverdlov, V., Selberherr, S. (2012). Influence of Geometry on Memristive Behavior of the Domain Wall Spintronic Memristors and Its Applications for Measurements. In Proceedings of International Conference on Superconductivity and Magnetism (ICSM 2012) (p. 1), Istanbul, Turkey. (reposiTUm)

137.		Sverdlov, V., Selberherr, S. (2012). MOSFET and Spin Transistor Simulations. In Abstract of 2012 CMOS Emerging Technologies (p. 1), Vancouver, BC Canada. (reposiTUm)

136.		Mahmoudi, H., Sverdlov, V., Selberherr, S. (2012). MTJ-based Implication Logic Gates and Circuit Architecture for Large-Scale Spintronic Stateful Logic Systems. In 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC), Montreux, Austria. https://doi.org/10.1109/essderc.2012.6343381 (reposiTUm)

135.		Makarov, A., Sverdlov, V., Selberherr, S. (2012). MTJs With a Composite Free Layer for High-Speed Spin Transfer Torque RAM: Micromagnetic Simulations. In 2012 15th International Workshop on Computational Electronics. https://doi.org/10.1109/iwce.2012.6242842 (reposiTUm)

134.		Makarov, A., Sverdlov, V., Selberherr, S. (2012). Micromagnetic Simulations of an MTJ With a Composite Free Layer for High-Speed Spin Transfer Torque RAM. In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 225–226), Urbana-Champaign, IL, USA. (reposiTUm)

133.		Makarov, A., Sverdlov, V., Selberherr, S. (2012). Modeling Emerging Non-Volatile Memories: Current Trends and Challenges. In Physics Procedia (pp. 99–104), Macao, China. https://doi.org/10.1016/j.phpro.2012.03.056 (reposiTUm)

132.		Osintsev, D., Sverdlov, V., Selberherr, S. (2012). Modeling Spintronic Effects in Silicon. In Abstracts International Workshop on Mathematics for Semiconductor Heterostructures (MSH) (p. 3), Berlin, Germany. (reposiTUm)

131.		Makarov, A., Sverdlov, V., Selberherr, S. (2012). New Trends in Microelectronics: Towards an Ultimate Memory Concept. In 2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS). https://doi.org/10.1109/iccdcs.2012.6188899 (reposiTUm)

130.		Makarov, A., Sverdlov, V., Selberherr, S. (2012). New Trends in Microelectronics: Towards an Ultimate Memory Concept. In 2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS), Playa del Carmen. https://doi.org/10.1109/iccdcs.2012.6188887 (reposiTUm)

129.		Mahmoudi, H., Sverdlov, V., Selberherr, S. (2012). Novel Memristive Charge- And Flux-Based Sensors. In Proceedings of the 8th Conference on Ph.D. Research in Microelectronics, Electronics (p. 4), Aachen, Germany. (reposiTUm)

128.		Makarov, A., Sverdlov, V., Selberherr, S. (2012). Recent Developments in Advanced Memory Modeling. In 2012 28th International Conference on Microelectronics Proceedings, Beograd. https://doi.org/10.1109/miel.2012.6222795 (reposiTUm)

127.		Osintsev, D., Baumgartner, O., Stanojevic, Z., Sverdlov, V., Selberherr, S. (2012). Reduction of Surface Roughness Induced Spin Relaxation in MOSFETs by Strain. In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 229–230), Urbana-Champaign, IL, USA. (reposiTUm)

126.		Osintsev, D., Baumgartner, O., Stanojevic, Z., Sverdlov, V., Selberherr, S. (2012). Reduction of Surface Roughness Induced Spin Relaxation in SOI MOSFETs. In 2012 15th International Workshop on Computational Electronics. https://doi.org/10.1109/iwce.2012.6242850 (reposiTUm)

125.		Makarov, A., Sverdlov, V., Selberherr, S. (2012). Reduction of the Switching Current in Spin Transfer Torque Random Access Memory. In Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Into the Cross Currents (p. 49), Corsica, France. (reposiTUm)

124.		Makarov, A., Sverdlov, V., Selberherr, S. (2012). STT-RAM With a Composite Free Layer: High Thermal Stability, Low Switching Barrier, and Sharp Switching Time Distribution. In Abstract of Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012) (p. H4), Sydney, Australia. (reposiTUm)

123.		Windbacher, T., Makarov, A., Sverdlov, V., Selberherr, S. (2012). Simulations of an Electrical Read-Write Operation of a Magnetic XOR Gate. In Abstract of Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012) (p. J3), Sydney, Australia. (reposiTUm)

122.		Mahmoudi, H., Sverdlov, V., Selberherr, S. (2012). Spintronic Stateful Logic Gates Using Magnetic Tunnel Junctions Written by Spin-Transfer Torque. In Book of Abstracts (p. P-6), Eindhoven, the Netherlands. (reposiTUm)

121.		Mahmoudi, H., Sverdlov, V., Selberherr, S. (2012). State Drift Optimization of Memristive Stateful IMP Logic Gates. In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 243–244), Urbana-Champaign, IL, USA. (reposiTUm)

120.		Osintsev, D., Stanojevic, Z., Baumgartner, O., Sverdlov, V., Selberherr, S. (2012). Strain-Induced Reduction of Surface Roughness Dominated Spin Relaxation in MOSFETs. In AIP Conference Proceedings, Wien, Österreich, Austria. https://doi.org/10.1063/1.4848413 (reposiTUm)

119.		Makarov, A., Sverdlov, V., Selberherr, S. (2012). Study of Self-Accelerating Switching in MTJs With Composite Free Layer by Micromagnetic Simulations. In 2012 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 229–232), Denver, Colorado, United States. (reposiTUm)

118.		Osintsev, D., Sverdlov, V., Selberherr, S. (2012). Surface Roughness Induced Reduction of Spin Relaxation in Thin Silicon Films. In Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)S) (p. 33), Kona. (reposiTUm)

117.		Osintsev, D., Sverdlov, V., Makarov, A., Selberherr, S. (2012). Surface Roughness Induced Spin Scattering and Relaxation in Silicon SOI MOSFETs. In Abstract of Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012) (p. B3), Sydney, Australia. (reposiTUm)

116.		Sverdlov, V., Makarov, A., Selberherr, S. (2012). Switching Energy Barrier and Current Reduction in MTJs With Composite Free Layer. In Bulletin American Physical Society (APS March Meeting 2012) (p. 1), Los Angeles/USA, Austria. (reposiTUm)

115.		Osintsev, D., Sverdlov, V., Selberherr, S. (2012). Using Strain for the Reduction of Surface Roughness Induced Spin Relaxation in Field-Effect Transistors With Thin Silicon Body. In Conference Proceedings of the VIII Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits (pp. 77–78), Granadea, Spanien, Austria. (reposiTUm)

114.		Osintsev, D., Baumgartner, O., Stanojevic, Z., Sverdlov, V., Selberherr, S. (2012). Valley Splitting and Spin Relaxation in Strained Silicon Quantum Wells. In Book of Abstracts (p. P-27), Eindhoven, the Netherlands. (reposiTUm)

113.		Makarov, A., Sverdlov, V., Osintsev, D., Selberherr, S. (2011). About the Switching Process in Magnetic Tunnel Junctions With Two Fixed Layers and One Soft Magnetic Layer. In Abstracts Book of The 20th International Conference on Soft Magnetic Materials (p. 444), Turin, Italy. (reposiTUm)

112.		Osintsev, D., Makarov, A., Selberherr, S., Sverdlov, V. (2011). An InAs-Based Spin Field-Effect Transistor: A Path to Room Temperature Operation. In Abstracts International Symposium on Advanced Nanostructures and Nano-Devices (ISANN) (p. 2), Kaanapali,Hawaii, USA. (reposiTUm)

111.		Osintsev, D., Sverdlov, V., Stanojevic, Z., Selberherr, S. (2011). Ballistic Spin Field Effect Transistor Based on Silicon Nanowires. In Bulletin American Physical Society (APS March Meeting 2011), Los Angeles/USA, Austria. (reposiTUm)

110.		Osintsev, D., Sverdlov, V., Stanojevic, Z., Makarov, A., Selberherr, S. (2011). Ballistic Spin Field-Effect Transistors Built on Silicon Fins. In Conference Proceedings of the VII Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits (pp. 59–60), Granada, Austria. (reposiTUm)

109.		Osintsev, D., Sverdlov, V., Makarov, A., Selberherr, S. (2011). Ballistic Transport Properties of Spin Field-Effect Transistors Built on Silicon and InAs Fins. In ECS Transactions (pp. 155–162), Ouro Preto. https://doi.org/10.1149/1.3615189 (reposiTUm)

108.		Osintsev, D., Sverdlov, V., Makarov, A., Selberherr, S. (2011). Ballistic Transport in Spin Field-Effect Transistors Built on Si and InAs. In Proceedings of International School and Conference on Spintronics and Quantum Information Technology (p. 229), Matsue, Japan. (reposiTUm)

107.		Osintsev, D., Sverdlov, V., Makarov, A., Selberherr, S. (2011). Ballistic Transport in Spin Field-Effect Transistors Built on Silicon. In Abstracts of Advanced Workshop on Spin and Charge Properties of Low Dimensional Systems (p. 1), Brasov, Romania. (reposiTUm)

106.		Mahmoudi, H., Sverdlov, V., Selberherr, S. (2011). Domain-Wall Spintronic Memristor for Capacitance and Inductance Sensing. In Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011) (p. 2), College Park, MD, USA. (reposiTUm)

105.		Makarov, A., Sverdlov, V., Osintsev, D., Selberherr, S. (2011). Fast Switching in Magnetic Tunnel Junctions With Double Barrier Layer. In Extended Abstracts of 2011 International Conference on Solid State Devices and Materials (p. 2), Nagoya, Japan. (reposiTUm)

104.		Makarov, A., Sverdlov, V., Osintsev, D., Selberherr, S. (2011). Micromagnetic Modeling of Penta-Layer Magnetic Tunnel Junctions With a Composite Soft Layer. In Abstracts of Advanced Workshop on Spin and Charge Properties of Low Dimensional Systems (p. 1), Brasov, Romania. (reposiTUm)

103.		Makarov, A., Sverdlov, V., Kryzhanovsky, D., Girkin, M., Selberherr, S. (2011). Modeling of Non-Volatile Memory Cells of RRAM Type on High Performance Computer Systems With the Monte-Carlo Method. In Book of Abstracts: Parallel Computing Technologies (PaVT) (p. 1), Moscow, Russia. (reposiTUm)

102.		Makarov, A., Selberherr, S., Sverdlov, V. (2011). Modeling of Advanced Memories. In 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, Hong Kong, Austria. https://doi.org/10.1109/edssc.2011.6117568 (reposiTUm)

101.		Makarov, A., Sverdlov, V., Osintsev, D., Weinbub, J., Selberherr, S. (2011). Modeling of the Advanced Spin Transfer Torque Memory: Macro- And Micromagnetic Simulations. In Proceedings of the 25th European Simulation and Modelling Conference (pp. 177–181), Guimaraes, Portugal. (reposiTUm)

100.		Makarov, A., Sverdlov, V., Osintsev, D., Selberherr, S. (2011). Modeling of the Switching Process in Multi-Layered Magnetic Tunnel Junctions. In Proceedings of International School and Conference on Spintronics and Quantum Information Technology (p. 238), Matsue, Japan. (reposiTUm)

99.		Makarov, A., Sverdlov, V., Osintsev, D., Selberherr, S. (2011). Optimization of the Penta-Layer Magnetic Tunnel Junction for Fast STTRAM Switching. In Abstracts International Symposium on Advanced Nanostructures and Nano-Devices (ISANN) (p. 2), Kaanapali,Hawaii, USA. (reposiTUm)

98.		Osintsev, D., Sverdlov, V., Makarov, A., Selberherr, S. (2011). Properties of InAs- And Silicon-Based Ballistic Spin Field-Effect Transistors Operated at Elevated Temperature. In Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011) (p. 2), College Park, MD, USA. (reposiTUm)

97.		Osintsev, D., Sverdlov, V., Makarov, A., Selberherr, S. (2011). Properties of InAs- And Silicon-Based Ballistic Spin Field-Effect Transistors. In 2011 International Conference on Simulation of Semiconductor Processes and Devices, Osaka, Japan. https://doi.org/10.1109/sispad.2011.6035049 (reposiTUm)

96.		Osintsev, D., Sverdlov, V., Stanojevic, Z., Makarov, A., Weinbub, J., Selberherr, S. (2011). Properties of Silicon Ballistic Spin Fin-Based Field-Effect Transistors. In Meeting Abstracts (p. 1), Honolulu, Austria. (reposiTUm)

95.		Stanojevic, Z., Sverdlov, V., Baumgartner, O., Kosina, H. (2011). Subband Engineering in N-Type Silicon Nanowires Using Strain and Confinement. In Conference Proceedings of the VII Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits (pp. 99–100), Granadea, Spanien, Austria. (reposiTUm)

94.		Stanojevic, Z., Sverdlov, V., Selberherr, S. (2011). Subband Structure Engineering in Silicon-On-Insulator FinFETs Using Confinement. In ECS Transactions (pp. 117–122), Montreal. https://doi.org/10.1149/1.3570785 (reposiTUm)

93.		Makarov, A., Sverdlov, V., Osintsev, D., Selberherr, S. (2011). Switching Time and Current Reduction Using a Composite Free Layer in Magnetic Tunnel Junctions. In Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011) (p. 2), College Park, MD, USA. (reposiTUm)

92.		Osintsev, D., Makarov, A., Sverdlov, V., Selberherr, S. (2011). Transport Modeling in Spin Field-Effect Transistors Built on Silicon Fins. In Abstracts Intl. Conf. on Large-Scale Scientific Computations (p. 64), Sozopol, Bulgaria. (reposiTUm)

91.		Osintsev, D., Sverdlov, V., Stanojevic, Z., Makarov, A., Selberherr, S. (2011). Transport Properties of Spin Field-Effect Transistors Built on Si and InAs. In Ulis 2011 Ultimate Integration on Silicon, Bologna, Austria. https://doi.org/10.1109/ulis.2011.5757998 (reposiTUm)

90.		Makarov, A., Sverdlov, V., Selberherr, S. (2010). A Monte Carlo Simulation of Reproducible Hysteresis in RRAM. In 2010 14th International Workshop on Computational Electronics, Urbana-Champaign, IL, USA. https://doi.org/10.1109/iwce.2010.5677934 (reposiTUm)

89.		Makarov, A., Sverdlov, V., Selberherr, S. (2010). A Stochastic Model of Bipolar Resistive Switching in Metal-Oxide-Based Memory. In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 396–399), Montreux, Austria. (reposiTUm)

88.		Sverdlov, V., Stanojevic, Z., Baumgartner, O., Selberherr, S. (2010). Confinement-Enhanced Valley Splitting for Spin-Driven Silicon Devices. In Proceedings of the 6^th International Conference on the Physics and Application of Spin Related Phenomena in Semiconductors (PASPS-VI) (pp. 273–274), Tokyo. (reposiTUm)

87.		Stanojevic, Z., Baumgartner, O., Sverdlov, V., Kosina, H. (2010). Electronic Band Structure Modeling in Strained Si-Nanowires: Two Band K &Amp;#x00B7; P Versus Tight Binding. In 2010 14th International Workshop on Computational Electronics, Urbana-Champaign, IL, USA. https://doi.org/10.1109/iwce.2010.5677927 (reposiTUm)

86.		Sverdlov, V., Stanojevic, Z., Baumgartner, O., Selberherr, S. (2010). Enhanced Valley Splitting in Silicon Nanowires and Point Contacts. In Abstract Book of the Nanoelectronics Days 2010 (p. 118), Aachen. (reposiTUm)

85.		Makarov, A., Weinbub, J., Sverdlov, V., Selberherr, S. (2010). First-Principles Modeling of Bipolar Resistive Switching in Metal-Oxide Based Memory. In Proceedings of the European Simulation and Modelling Conference (ESM) (pp. 181–186), Malta. (reposiTUm)

84.		Sverdlov, V., Baumgartner, O., Selberherr, S. (2010). Large Valley Splitting in Slightly Misaligned Uniaxially Strained Silicon Films. In Bulletin American Physical Society (APS March Meeting 2010) (p. B9.00001), Los Angeles/USA, Austria. (reposiTUm)

83.		Pourfath, M., Sverdlov, V., Selberherr, S. (2010). Modeling Demands for Nanoscale Devices. In Proceedings of the Device Research Conference (DRC) (pp. 211–214), Santa Barbara , California, Austria. (reposiTUm)

82.		Sverdlov, V., Selberherr, S. (2010). Modeling Floating Body Z-Ram Storage Cells. In 2010 27th International Conference on Microelectronics Proceedings, Beograd. https://doi.org/10.1109/miel.2010.5490533 (reposiTUm)

81.		Sverdlov, V., Selberherr, S. (2010). Modeling of Modern MOSFETs With Strain. In Proceedings of the 1st International Workshop on Semiconductor Devices Modeling and Electronic (SDMEM2010) (pp. 1–11), La Plata, Buenos Aires, Argentina. (reposiTUm)

80.		Makarov, A., Sverdlov, V., Selberherr, S. (2010). Modeling of Resistive Switching in RRAM Using Monte Carlo Simulations. In Book of Abstracts (p. 141), Catania. (reposiTUm)

79.		Makarov, A., Sverdlov, V., Selberherr, S. (2010). Modelling of the SET and RESET Process in Bipolar Resistive Oxide-Based Memory Using Monte Carlo Simulations. In Abstracts of the International Conference on Numerical Methods and Applications (NM&A) (p. B-39), Borovets. (reposiTUm)

78.		Makarov, A., Sverdlov, V., Selberherr, S. (2010). Monte Carlo Simulation of Bipolar Resistive Switching Memories. In Proceedings of the Nanoelectronics Days 2010 (p. 22), Aachen. (reposiTUm)

77.		Sverdlov, V., Selberherr, S. (2010). Scalability of a Second Generation Z-Ram Cell: A Computational Study. In Proceedings of the International Conference on Computational, Experimental Engineering and Sciences (ICCES) (pp. 232–247), Las Vegas. (reposiTUm)

76.		Sverdlov, V., Stanojevic, Z., Baumgartner, O., Selberherr, S. (2010). Spin-Driven Silicon Devices Utilizing Enhanced Valley Splitting. In Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS) (p. TH-06), Kona. (reposiTUm)

75.		Makarov, A., Sverdlov, V., Selberherr, S. (2010). Stochastic Modeling of the Resistive Switching Mechanism in Oxide-Based Memory. In Proceedings of the 17^th International Symposium on the Physics, Failure Analysis of Integrated Circuits (pp. 309–312), Singapore. (reposiTUm)

74.		Makarov, A., Sverdlov, V., Selberherr, S. (2010). Stochastic Modeling Hysteresis and Resistive Switching in Bipolar Oxide-Based Memory. In 2010 International Conference on Simulation of Semiconductor Processes and Devices, Bologna, Italy. https://doi.org/10.1109/sispad.2010.5604517 (reposiTUm)

73.		Sverdlov, V., Selberherr, S. (2010). Strain Engineering Techniques: A Rigorous Physical Review. In Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS) (p. TH-05), Kona. (reposiTUm)

72.		Baumgartner, O., Sverdlov, V., Kosina, H., Selberherr, S. (2010). Strain-Induced Valley Splitting in Slightly Misaligned Silicon Films. In Conference Proceedings of the Sixth Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits (pp. 91–92), Granadea, Spanien, Austria. (reposiTUm)

71.		Stanojevic, Z., Baumgartner, O., Sverdlov, V., Kosina, H. (2010). Subband Structure of Silicon Nanowires From the Hensel-Hasegawa-Nakayama Model. In Proceedings of the 11th International Conference on Ultimate Integration o Silicon (pp. 69–72), Bologna, Austria. (reposiTUm)

70.		Pourfath, M., Sverdlov, V., Selberherr, S. (2010). Transport Modeling for Nanoscale Semiconductor Devices. In Proceedings of the International Conference on Solid-State and Integrated Circuit Technology (ICSICT) (pp. 1737–1740), Peking, Austria. (reposiTUm)

69.		Vasicek, M., Sverdlov, V., Cervenka, J., Grasser, T., Kosina, H., Selberherr, S. (2010). Transport in Nanostructures: A Comparative Analysis Using Monte Carlo Simulation, the Spherical Harmonic Method, and Higher Moments Models. In Large-Scale Scientific Computing: 7th International Conference, LSSC 2009 (pp. 443–450), Sozopol, Bulgaria. https://doi.org/10.1007/978-3-642-12535-5_52 (reposiTUm)

68.		Tyaginov, S., Gös, W., Grasser, T., Sverdlov, V., Schwaha, P., Heinzl, R., Stimpfl, F. (2009). Description of Si-O Bond Breakage Using Pair-Wise Interatomic Potentials Under Consideration of the Whole Crystal. In Proceedings of the IEEE International Reliability Physics Symposium (IRPS) (pp. 514–522), Phoenix. (reposiTUm)

67.		Sverdlov, V., Windbacher, T., Baumgartner, O., Selberherr, S. (2009). Electron Subband Structure and Valley Splitting in Silicon Ultra-Thin Body SOI Structures From the Two-Band k.p Model. In EUROSOI 2009 Conference Proceedings (pp. 81–82), Granadea, Spanien, Austria. (reposiTUm)

66.		Sverdlov, V., Baumgartner, O., Windbacher, T., Schanovski, F., Selberherr, S. (2009). Enhanced by Shear Strain Splitting of Unprimed Subbands in (001) Silicon Films and Point Contacts. In Abstracts of the International Conference on Spintronics and Quantum Information Technology (SPINTECH) (p. 301), Cracow. (reposiTUm)

65.		Sverdlov, V., Baumgartner, O., Windbacher, T., Schanovsky, F., Selberherr, S. (2009). Impact of Confinement and Stress on the Subband Parameters in Ultra-Thin Silicon Films. In ECS Transactions (pp. 389–396), Ouro Preto. (reposiTUm)

64.		Sverdlov, V., Baumgartner, O., Windbacher, T., Schanovsky, F., Selberherr, S. (2009). Impact of Confinement of Semiconductor and Band Engineering on Future Device Performance. In 215^th ECS Meeting (pp. 15–26), San Francisco. (reposiTUm)

63.		Tyaginov, S., Sverdlov, V., Gös, W., Grasser, T. (2009). Impact of O-Si-O Bond Angle Fluctuations on the Si-O Bond-Breakage Rate. In Proceedings of the 20th European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, Maastricht. (reposiTUm)

62.		Tyaginov, S., Sverdlov, V., Gös, W., Schwaha, P., Heinzl, R., Stimpfl, F., Grasser, T. (2009). Impact of the Surrounding Network on the Si-O Bond-Breakage Energetics. In Proceedings of the 2009 MRS Spring Meeting, San Francisco. (reposiTUm)

61.		Sverdlov, V., Baumgartner, O., Windbacher, T., Selberherr, S. (2009). Modeling Techniques for Strained CMOS Technology. In 216^th ECS Meeting (pp. 3–18), Vienna. (reposiTUm)

60.		Windbacher, T., Sverdlov, V., Selberherr, S. (2009). Modeling of Low Concentrated Buffer DNA Detection With Suspend Gate Field-Effect Transistors (SGFET). In 2009 13th International Workshop on Computational Electronics, Urbana-Champaign, IL, USA. https://doi.org/10.1109/iwce.2009.5091122 (reposiTUm)

59.		Baumgartner, O., Karner, M., Sverdlov, V., Kosina, H. (2009). Numerical Quadrature of the Subband Distribution Functions in Strained Silicon UTB Devices. In 2009 13th International Workshop on Computational Electronics, Urbana-Champaign, IL, USA. https://doi.org/10.1109/iwce.2009.5091131 (reposiTUm)

58.		Baumgartner, O., Karner, M., Sverdlov, V., Kosina, H. (2009). Numerical Study of the Electron Subband Structure in Strained Silicon UTB Devices. In EUROSOI 2009 Conference Proceedings (pp. 57–58), Granadea, Spanien, Austria. (reposiTUm)

57.		Sverdlov, V., Baumgartner, O., Windbacher, T., Selberherr, S. (2009). Perspectives of Silicon for Future Spintronic Applications From the Peculiarities of the Subband Structure in Ultra-Thin Films. In Proceedings of 2009 Silicon Nanoelectronics Workshop (pp. 95–96), Kyoto. (reposiTUm)

56.		Sverdlov, V., Selberherr, S. (2009). Scaling of Advanced Floating Body Z-Ram Storage Cells: A Modeling Approach. In Proceedings of the International Conference on Very Large Scale Integration (VLSI-SoC) (p. 4), Florianopolis. (reposiTUm)

55.		Tyaginov, S., Sverdlov, V., Gös, W., Schwaha, P., Heinzl, R., Stimpfl, F., Grasser, T. (2009). Si-O Bond-Breakage Energetics Under Consideration of the Whole Crystal. In Proceedings of the International Semiconductor Technology Conference, China Semiconductor Technology International Conference (p. 84), Shanghai. (reposiTUm)

54.		Sverdlov, V., Baumgartner, O., Windbacher, T., Selberherr, S. (2009). Silicon for Spintronic Applications: Strain-Enhanced Valley Splitting. In Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Unmapped Roads (p. 58), Sardinia. (reposiTUm)

53.		Tyaginov, S., Sverdlov, V., Gös, W., Grasser, T. (2009). Statistics of Si-O Bond-Breakage Rate Variations Induced by O-Si-O Angle Fluctuations. In 2009 13th International Workshop on Computational Electronics, Urbana-Champaign, IL, USA. https://doi.org/10.1109/iwce.2009.5091156 (reposiTUm)

52.		Windbacher, T., Sverdlov, V., Selberherr, S., Heitzinger, C., Mauser, N., Ringhofer, C. (2009). Study of the Properties of Biotin-Streptavidin Sensitive BioFETs. In Proceedings of the International Conference on Biomedical Electronics and Devices (BIODEVICES) (pp. 24–30), Porto. (reposiTUm)

51.		Windbacher, T., Sverdlov, V., Selberherr, S., Heitzinger, C., Mauser, N., Ringhofer, C. (2009). Study of the Properties of Biotin-Streptavidin Sensitive Biofets. In Final Program and Book of Abstracts (p. 42), Porto. (reposiTUm)

50.		Sverdlov, V., Baumgartner, O., Selberherr, S. (2009). Subband Parameters in Strained (110) Silicon Films From the Hensel-Hasegawa-Nakayama Model of the Conduction Band. In Proceedings of the International Semiconductor Device Research Symposium (ISDRS) (pp. TP6-03.1–2), College Park, MD, USA. (reposiTUm)

49.		Sverdlov, V., Baumgartner, O., Tyaginov, S., Windbacher, T., Selberherr, S. (2009). Subband Structure in Ultra-Thin Silicon Films. In Proceedings of the International Symposium NANOSTRUCTURES: Physics and Technology (pp. 62–63), Minsk. (reposiTUm)

48.		Sverdlov, V., Baumgartner, O., Kosina, H., Selberherr, S., Schanovsky, F., Esseni, D. (2009). The Linear Combination of Bulk Bands-Method for Electron and Hole Subband Calculations in Strained Silicon Films and Surface Layers. In 2009 13th International Workshop on Computational Electronics, Urbana-Champaign, IL, USA. https://doi.org/10.1109/iwce.2009.5091158 (reposiTUm)

47.		Sverdlov, V., Baumgartner, O., Windbacher, T., Schanovsky, F., Selberherr, S. (2009). Thickness Dependence of the Effective Masses in a Strained Thin Silicon Film. In 2009 International Conference on Simulation of Semiconductor Processes and Devices, San Diego, CA, United States. https://doi.org/10.1109/sispad.2009.5290252 (reposiTUm)

46.		Sverdlov, V., Vasicek, M., Cervenka, J., Grasser, T., Kosina, H., Selberherr, S. (2009). Transport in Nanostructures: A Comparative Analysis Using Monte Carlo Simulation, the Spherical Harmonic Method, and Higher Moments Models. In Abstracts of the International Conference on Large-Scale Scientific Computations (LSSC) (p. 93), Sozopol, Bulgaria. (reposiTUm)

45.		Sverdlov, V., Windbacher, T., Baumgartner, O., Schanovsky, F., Selberherr, S. (2009). Valley Splitting in Thin Silicon Films From a Two-Band K·p Model. In Proceedings of the 10^th International Conference on Ultimate Integration of Silicon (pp. 277–280), Bologna, Austria. (reposiTUm)

44.		Windbacher, T., Sverdlov, V., Selberherr, S., Heitzinger, C. (2008). A General Bottom-Up Modeling Approach for BioFETs. In Abstracts Conf.on Nanosensors for Industrial Applications (NANOSENS), Vienna, Austria. (reposiTUm)

43.		Gös, W., Karner, M., Sverdlov, V., Grasser, T. (2008). A Rigorous Model for Trapping and Detrapping in Thin Gate Dielectrics. In Proceedings 15^th International Symposium on the Physical and Failure Analysis of Integrated Circuits (pp. 249–254), Singapore. (reposiTUm)

42.		Sverdlov, V., Kosina, H., Selberherr, S. (2008). Comparative Analysis of Pseudo-Potential and Tight-Binding Band Structure Calculations With an Analytical Two-Band K·p Model: Conduction Band of Silicon. In Micro- and Nanoelectronics 2007 (pp. 70251I-1–70251I-8), Athen, Greece. https://doi.org/10.1117/12.802503 (reposiTUm)

41.		Sverdlov, V., Kosina, H., Selberherr, S. (2008). Electron Subband Structure and Controlled Valley Splitting in Silicon Thin-Body SOI FETs: Two-Band k.p Theory and Beyond. In Proceedings of the 4^th Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits (pp. 41–42), Granada, Austria. (reposiTUm)

40.		V. Sverdlov, T. Windbacher, S. Selberherr: "Mobility Enhancement in Thin Silicon Films: Strain and Thickness Dependences of the Effective Masses and Non-Parabolicity Parameter"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7; 145 - 148. https://doi.org/10.1109/SISPAD.2008.4648258

39.		Sverdlov, V., Selberherr, S. (2008). Mobility Modeling in Advanced MOSFETs With Ultra-Thin Silicon Body Under Stress. In ECS Transactions (pp. 159–168), Ouro Preto. (reposiTUm)

38.		Sverdlov, V., Selberherr, S. (2008). Modeling and Simulation of Advanced Floating Body Z-Ram Memory Cells. In Proceedings European Simulation and Modeling Conference (ESM) (pp. 380–384), Porto, Austria. (reposiTUm)

37.		Sverdlov, V., Ungersboeck, E., Kosina, H. (2008). Monte Carlo Algorithm for Mobility Calculations in Thin Body Field Effect Transistors: Role of Degeneracy and Intersubband Scattering. In Large-Scale Scientific Computing: 6th International Conference, LSSC 2007 (pp. 157–164), Sozopol, Bulgaria. https://doi.org/10.1007/978-3-540-78827-0_16 (reposiTUm)

36.		Pourfath, M., Sverdlov, V., Kosina, H. (2008). On the Role of Off‐Diagonal Dephasing in Carbon Nanotube Based Photo‐Detectors. In 1^st Fone Conference Nanoelectronics 2008 (p. 41), Taormina, Italy. (reposiTUm)

35.		Windbacher, T., Sverdlov, V., Selberherr, S., Heitzinger, C., Mauser, N., Ringhofer, C. (2008). Simulation of Field-Effect Biosensors (BioFETs) for Biotin-Streptavidin Complexes. In PHYSICS OF SEMICONDUCTORS: 29^th International Conference on the Physics of Semiconductors (pp. 507–508), Wien, Österreich, Austria. (reposiTUm)

34.		Windbacher, T., Sverdlov, V., Selberherr, S., Heitzinger, C., Mauser, N., Ringhofer, C. (2008). Simulation of Field-Effect Biosensors (BioFETs). In 2008 International Conference on Simulation of Semiconductor Processes and Devices, Kanagawa, Japan. https://doi.org/10.1109/sispad.2008.4648270 (reposiTUm)

33.		Sverdlov, V., Selberherr, S. (2008). Strain-Controlled Valley Splitting in Si-SiGe Heterostructures. In Abstract Book (pp. 20–21), Princeton. (reposiTUm)

32.		Sverdlov, V., Windbacher, T., Kosina, H., Selberherr, S. (2008). Stress-Induced Valley Splitting in Silicon Thin Films. In Proceedings of the 9th International Conference on Ultimate Integration on Silicon (pp. 93–96), Bologna, Austria. (reposiTUm)

31.		Okhonin, S., Nagoga, M., Lee, C., Colinge, J., Afzalian, A., Yan, R., Akhavan, N., Xiong, W., Sverdlov, V., Selberherr, S., Mazure, C. (2008). Ultra-Scaled Z-Ram Cell. In 2008 IEEE International SOI Conference Proceedings (pp. 157–158), New Paltz. (reposiTUm)

30.		Sverdlov, V., Kosina, H., Selberherr, S. (2007). Comparative Analysis of Pseudo-Potential and Tight-Binding Band Structure Calculations With an Analytical Two-Band K·p Model: Conduction Band of Silicon. In International Conference "Micro and Nanoelectronics - 2007" Book of Abstracts, Moscow-Zvenigorod. (reposiTUm)

29.		Sverdlov, V., Kosina, H., Selberherr, S. (2007). Conduction Band in Silicon: Numerical Versus Analytical Two-Band K·p Model. In 8^th Conference of the Society for Electronics, Telecommunications, Automatics, and Informatics (p. 4), Ohrid, Macedonia. (reposiTUm)

28.		Sverdlov, V., Ungersböck, S., Kosina, H., Selberherr, S. (2007). Effects of Shear Strain on the Conduction Band in Silicon: An Efficient Two-Band k.p Theory. In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 386–389), Montreux, Austria. (reposiTUm)

27.		Sverdlov, V., Kosina, H. (2007). Electron Subband Dispersions in Ultra-Thin Silicon Films From a Two-Band K·p Theory. In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 92–93), Urbana-Champaign, IL, USA. (reposiTUm)

26.		Sverdlov, V. (2007). Enhancing Performance of Modern MOSFETs: Strain Engineering and Advanced Device Architectures. In 7^th International Conference Frontiers of Josephson Physics and Nanoscience (pp. 63–64), Palinuro, Italy. (reposiTUm)

25.		Sverdlov, V., Ungersböck, S., Kosina, H. (2007). Influence of Uniaxial [110] Stress on Silicon Band Structure and Electron Low-Field Mobility in Ultra-Thin Body SOIs. In EUROSOI 2007 (pp. 39–40), Granadea, Spanien, Austria. (reposiTUm)

24.		Sverdlov, V., Karlowatz, G., Ungersboeck, E., Kosina, H. (2007). Influence of Uniaxial [110] Stress on the Silicon Conduction Band Structure: Stress Dependence of the Nonparabolicity Parameter. In Simulation of Semiconductor Processes and Devices 2007 (pp. 329–332), Vienna, Austria. https://doi.org/10.1007/978-3-211-72861-1_79 (reposiTUm)

23.		Ungersboeck, E., Sverdlov, V., Kosina, H., Selberherr, S. (2007). Low-Field Mobility in Strained Silicon Inversion Layers and UTB MOSFETs for Different Substrate Orientations. In AIP Conference Proceedings. https://doi.org/10.1063/1.2730422 (reposiTUm)

22.		Sverdlov, V., Kosina, H., Grasser, T., Selberherr, S. (2007). Self-Consistent Wigner Monte Carlo Simulations of Current in Emerging Nanodevices: Role of Tunneling and Scattering. In AIP Conference Proceedings. https://doi.org/10.1063/1.2730425 (reposiTUm)

21.		Grasser, T., Gös, W., Sverdlov, V., Kaczer, B. (2007). The Universality of NBTI Relaxation and Its Implications for Modeling and Characterization. In Proceedings of the International Reliability Physics Symposium (IRPS) (pp. 268–280), Phoenix. (reposiTUm)

20.		Sverdlov, V., Karlowatz, G., Kosina, H., Selberherr, S. (2007). Two-Band k.p Model for the Conduction Band in Silicon. In Proceedings European Simulation and Modeling Conference (pp. 220–224), Malta. (reposiTUm)

19.		Sverdlov, V., Karlowatz, G., Dhar, S., Kosina, H., Selberherr, S. (2007). Two-Band K·p Model for the Conduction Band in Silicon: Impact of Strain and Confinement on Band Structure and Mobility. In 2007 International Semiconductor Device Research Symposium (p. 2), College Park, MD, USA. (reposiTUm)

18.		Sverdlov, V., Ungersböck, S., Kosina, H., Selberherr, S. (2006). Comparative Study of Low-Field Mobilities in Double- And Single-Gate Ultra-Thin Body SOI for Different Substrate Orientations. In Abstracts IEEE 2006 Silicon Nanoelectronics Workshop (pp. 17–18), Honolulu. (reposiTUm)

17.		Sverdlov, V., Kosina, H., Selberherr, S. (2006). Current Flow in Upcoming Microelectronic Devices. In Proceedings International Caribbean Conference on Devices, Circuits and Systems (pp. 3–8), Playa del Carmen. (reposiTUm)

16.		Sverdlov, V., Kosina, H., Selberherr, S. (2006). Current Transport in Nanoelectronic Semiconductor Devices. In Proceedings IEEE Conference on Emerging Technologies - Nanoelectronics (pp. 490–495), Singapore. (reposiTUm)

15.		Ungersboeck, E., Sverdlov, V., Kosina, H., Selberherr, S. (2006). Electron Inversion Layer Mobility Enhancement by Uniaxial Stress on (001) and (110) Oriented MOSFETs. In 2006 International Conference on Simulation of Semiconductor Processes and Devices, Monterey, California, United States. https://doi.org/10.1109/sispad.2006.282834 (reposiTUm)

14.		Ungersböck, S., Sverdlov, V., Kosina, H., Selberherr, S. (2006). Low-Field Electron Mobility in Stressed UTB SOI MOSFETs for Different Substrate Orientations. In 210^th ECS Meeting (p. 1), Cancun. (reposiTUm)

13.		Sverdlov, V., Ungersböck, S., Kosina, H. (2006). Mobility Modeling in SOI FETs for Different Substrate Orientations and Strain Conditions. In NATO Advanced Research Workshop Conference Abstracts (pp. 77–78), Sudak. (reposiTUm)

12.		Sverdlov, V., Ungersböck, S., Kosina, H. (2006). Mobility for High Effective Field in Double-Gate and Single-Gate SOI for Different Substrate Orientations. In EUROSOI 2006 Second Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (pp. 133–134), Granadea, Spanien, Austria. (reposiTUm)

11.		Ungersböck, S., Sverdlov, V., Kosina, H., Selberherr, S. (2006). Modeling of Advanced Semiconductor Devices. In ECS Transactions (pp. 207–216), Ouro Preto. (reposiTUm)

10.		Sverdlov, V., Ungersböck, S., Kosina, H., Selberherr, S. (2006). Orientation Dependence of the Low Field Mobility in Double- And Single-Gate SOI FETs. In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 178–181), Montreux, Austria. (reposiTUm)

9.		Sverdlov, V., Kosina, H., Ringhofer, C., Nedjalkov, M., Selberherr, S. (2006). Quantum Correction to the Semiclassical Electron-Phonon Scattering Operator. In Large-Scale Scientific Computing: 5th International Conference, LSSC 2005 (pp. 594–601), Sozopol, Bulgaria. https://doi.org/10.1007/11666806_68 (reposiTUm)

8.		Sverdlov, V., Grasser, T. (2006). Scattering and Space-Charge Effects in Wigner Monte Carlo Simulations of Single and Double Barrier Devices. In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 29–30), Urbana-Champaign, IL, USA. (reposiTUm)

7.		Ungersböck, S., Sverdlov, V., Kosina, H., Selberherr, S. (2006). Strain Engineering for CMOS Devices. In 2006 8^th International Conference on Solid-State and Integrated Circuit Technology Proceedings (Part 1 of 3) (pp. 124–127), Peking, Austria. (reposiTUm)

6.		Kosina, H., Sverdlov, V., Grasser, T. (2006). Wigner Monte Carlo Simulation: Particle Annihilation and Device Applications. In 2006 International Conference on Simulation of Semiconductor Processes and Devices, Monterey, California, United States. https://doi.org/10.1109/sispad.2006.282908 (reposiTUm)

5.		Sverdlov, V., Kosina, H., Selberherr, S. (2005). Modeling Current Transport in Ultra-Scaled Field Effect Transistors. In Proceedings of the 2005 IEEE Conference on Electron Devices and Solid-State Circuits (pp. 385–390), Hong Kong, Austria. (reposiTUm)

4.		Kosina, H., Sverdlov, V., Ringhofer, C., Nedjalkov, M., Selberherr, S. (2005). Quantum Correction to the Semiclassical Electron-Phonon Scattering Operator. In Abstracts of the 5th International Conference on Large-Scale Scientific Computations (pp. 36–37), Sozopol, Bulgaria. (reposiTUm)

3.		Gehring, A., Sverdlov, V., Kosina, H., Selberherr, S. (2005). Quantum Transport in Ultra-Scaled Double-Gate MOSFETs: A Wigner Function-Based Monte Carlo Approach. In EUROSOI 2005 First Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (pp. 71–72), Granada, Austria. (reposiTUm)

2.		Sverdlov, V. (2005). Shot Noise Suppression and Enhancement in 2D Shot Noise Suppression and Enhancement at 2D Hopping and Single-Electron Arrays. In 4-th International Conference on Unsolved Problems of Noise and Fluctuations in Physics, Biology, High Technology (pp. 177–182), Gallipoli, Austria. (reposiTUm)

1.		Sverdlov, V., Gehring, A., Kosina, H., Selberherr, S. (2005). Tunneling and Intersubband Coupling in Ultra-Thin Body Double-Gate MOSFETs. In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 93–96), Montreux, Austria. (reposiTUm)

Talks and Poster Presentations (without Proceedings-Entry)

7.		Fiorentini, S., Orio, R., Goes, W., Ender, J., Sverdlov, V. (2019). Comprehensive Comparison of Switching Models for Perpendicular Spin Transfer Torque MRAM Cells. European Materials Research Society (EMRS), Strasbourg, France, EU. (reposiTUm)

6.		Ender, J., Orio, R., Fiorentini, S., Goes, W., Sverdlov, V. (2019). Large-Scale Finite Element Micromagnetics Simulations Using Open Source Software. European Materials Research Society (EMRS), Strasbourg, France, EU. (reposiTUm)

5.		Sverdlov, V. (2019). Magnetic Field Free Switching of a Perpendicular SOT MRAM Cell. LETI Innovation days: Advanced Simulation for Non-Volatile Memory Workshop, Grenoble, France, EU. (reposiTUm)

4.		Sverdlov, V., Osintsev, D., Selberherr, S. (2014). From Strained SOI MOSFET to Spin MOSFET With Strain: A Modeling Approach. Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Granada, Austria. (reposiTUm)

3.		Kosina, H., Sverdlov, V. (2007). Impact of Strain and Defects on CMOS Process and Device Performance. 15^thBiannual Conference Insulating Films on Semiconductors (INFOS-2007), Glyfada Athens, Greece, EU. (reposiTUm)

2.		Kinkhabwala, Y., Sverdlov, V., Likharev, K. (2005). Quasi-Continuous Charge Transfer via 2D Hopping. APS March Meeting, Los Angeles/USA, Austria. (reposiTUm)

1.		Sverdlov, V., Kosina, H., Ringhofer, Ch., Nedjalkov, M., Selberherr, S. (2004). Beyond the Golden Rule in Electron-Phonon Scattering: An Advanced Monte Carlo Algorithm. DFG Workshop on Multiscale Problems in Quantum Mechanics and Averaging Techniques, Garching, Austria. (reposiTUm)

Habilitation Theses

1.		Sverdlov, V. (2011). Strain-Induced Effects in Advanced MOSFETs Technische Universität Wien. (reposiTUm)

Doctor's Theses (authored and supervised)

5.		Fiorentini, S. (2023). Computation of Torques in Magnetic Tunnel Junctions Technische Universität Wien. https://doi.org/10.34726/hss.2023.109800 (reposiTUm)

4.		J. Ghosh: "Modeling Spin-Dependent Transport in Silicon"; Supervisor, Reviewer: V. Sverdlov, M. Bescond; Institut für Mikroelektronik, 2016; oral examination: 2016-03-03.

3.		Mahmoudi, H. (2014). Devices and Circuits for Stateful Logic and Memristive Sensing Applications Technische Universität Wien. https://doi.org/10.34726/hss.2014.24465 (reposiTUm)

2.		Makarov, A. (2014). Modeling of Emerging Resistive Switching Based Memory Cells Technische Universität Wien. https://doi.org/10.34726/hss.2014.23875 (reposiTUm)

1.		Osintsev, D. (2014). Modeling Spintronic Effects in Silicon Technische Universität Wien. https://doi.org/10.34726/hss.2014.24842 (reposiTUm)

Diploma and Master Theses (authored and supervised)

1.		Stürmer, P. (2022). Design of AMR Sensors for 3D Magnet Motion Tracking Technische Universität Wien. (reposiTUm)

Patents

4.		H. Mahmoudi, S. Selberherr, V. Sverdlov, T. Windbacher: "Spin Torque Magnetic Integrated Circuit"; Patent: International, No. WO 2014/154497 A1 ; submitted: 2014-03-13, granted: 2014-10-02.

3.		T. Windbacher, V. Sverdlov, S. Selberherr, H. Mahmoudi: "Spin Torque Magnetic Integrated Circuit"; Patent: Europe, No. EP 2784 020 A1 ; submitted: 2013-03-27, granted: 2014-10-01.

2.		H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr: "RRAM Implication Logic Gates"; Patent: International, No. WO 2014/079747 A1 ; submitted: 2013-11-13, granted: 2014-05-30.

1.		H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr: "RRAM Implication Logic Gates"; Patent: Europe, No. EP 2 736 044 A1 ; submitted: 2012-11-22, granted: 2014-05-28.

Scientific Reports

3.		Ceric, H., Hehenberger, P. P., Milovanovic, G., Sverdlov, V., Vasicek, M., Selberherr, S. (2009). VISTA Status Report June 2009. (reposiTUm)

2.		Baumgartner, O., Gös, W., Nentchev, A., Stimpfl, F., Sverdlov, V., Selberherr, S. (2007). VISTA Status Report December 2007. (reposiTUm)

1.		Dhar, S., Li, L., Pourfath, M., Spevak, M., Sverdlov, V., Selberherr, S. (2006). VISTA Status Report June 2006. (reposiTUm)