Staff Person Publications

Publications Viktor Sverdlov

509 records

Books and Editorships

11.	V. Sverdlov, N. Jutong: "Editorial for the Special Issue on Magnetic and Spin Devices"; Micromachines, 13, (2022), 493-1 - 493-3 doi:10.3390/mi13040493. BibTeX
10.	F. Gamiz, V. Sverdlov, C. Sampedro, L. Donet: "2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon EUROSOI-ULIS Book of Abstracts"; Universidad de Granada, Granada, Spain, (2018), ISBN: 978-1-5386-4810-0, 154 page(s) . BibTeX
9.	F. Gamiz, V. Sverdlov, C. Sampedro, L. Donet: "2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon EUROSOI-ULIS"; IEEE Xplore, in "Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon EUROSOI-ULIS", (2018), ISBN: 978-1-5386-4811-7, 1 - 2. BibTeX
8.	V. Sverdlov, S. Selberherr: "Special Issue: Extended Papers Selected from EUROSOI-ULIS 2016"; Solid-State Electronics, Elsevier, (2017), ISSN: 0038-1101, 206 page(s) . BibTeX
7.	V. Sverdlov, S. Selberherr: "Editorial: Special Issue of Solid-State Electronics, dedicated to EUROSOI-ULIS 2016"; Solid-State Electronics, 128, (2017), 1 - 2 doi:10.1016/j.sse.2016.10.015. BibTeX
6.	B. Jonker, W. Porod, V. Sverdlov, K. Matsumoto, S. Selberherr, S.M. Goodnick: "Innovative Nanoscale Devices and Systems"; Society for Micro- and Nanoelectronics, (2016), ISBN: 978-3-901578-30-4, 88 page(s) . BibTeX
5.	V. Sverdlov, S. Cristoloveanu, F. Gamiz, S. Selberherr: "2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon EUROSOI-ULIS"; IEEE, (2016), ISBN: 978-1-4673-8608-1, 272 page(s) . BibTeX
4.	V. Sverdlov, F. Gamiz, S. Cristoloveanu, S. Selberherr: "2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon EUROSOI-ULIS Book of Abstracts"; Society for Micro- and Nanoelectronics, (2016), ISBN: 978-3-901578-29-8, 166 page(s) . BibTeX
3.	V. Sverdlov, S. Selberherr, F. Gamiz, S. Cristoloveanu: "Preface 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)"; IEEE Xplore, in "Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2016), ISBN: 978-1-4673-8609-8, 1 doi:10.1109/ULIS.2016.7440034. BibTeX
2.	V. Sverdlov, B. Jonker, K. Ishibashi, S.M. Goodnick, S. Selberherr: "Innovative Nanoscale Devices and Systems"; Society for Micro- and Nanoelectronics, (2014), ISBN: 978-3-901578-28-1, 84 page(s) . BibTeX
1.	V. Sverdlov: "Strain-Induced Effects in Advanced MOSFETs"; S. Selberherr (ed); Springer-Verlag, Wien - New York, (2011), ISBN: 978-3-7091-0381-4, 252 page(s) doi:10.1007/978-3-7091-0382-1. BibTeX

Publications in Scientific Journals

80.	M. Bendra, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov: "Interface Effects in Ultra-Scaled MRAM Cells"; Solid-State Electronics, 194, (2022), 108373-1 - 108373-4 doi:10.1016/j.sse.2022.108373. BibTeX
79.	J. Ender, S. Fiorentini, R. Orio, T. Hadámek, M. Bendra, W. Goes, S. Selberherr, V. Sverdlov: "Advances in Modeling Emerging Magnetoresistive Random Access Memories: From Finite Element Methods to Machine Learning Approaches"; Proceedings of SPIE, 12157, (invited) (2022), 1215708-1 - 1215708-14 doi:10.1117/12.2624595. BibTeX
78.	J. Ender, R. Lacerda de Orio, S. Fiorentini, S. Selberherr, W. Goes, V. Sverdlov: "Reinforcement learning to reduce failures in SOT-MRAM switching"; Microelectronics Reliability, 135, (invited) (2022), 1 - 5 doi:10.1016/j.microrel.2022.114570. BibTeX
77.	T. Hadámek, S. Fiorentini, M. Bendra, J. Ender, R. Orio, W. Goes, S. Selberherr, V. Sverdlov: "Temperature Increase in STT-MRAM at Writing: A Fully Three-Dimensional Finite Element Approach"; Solid-State Electronics, 193, (invited) (2022), 108269-1 - 108269-7 doi:10.1016/j.sse.2022.108269. BibTeX
76.	N. Jorstad, S. Fiorentini, W.J. Loch, W. Goes, S. Selberherr, V. Sverdlov: "Finite Element Modeling of Spin-Orbit Torques"; Solid-State Electronics, 194, (2022), 108323-1 - 108323-4 doi:10.1016/j.sse.2022.108323. BibTeX
75.	W.J. Loch, S. Fiorentini, N. Jorstad, W. Goes, S. Selberherr, V. Sverdlov: "Double Reference Layer STT-MRAM Structures with Improved Performance"; Solid-State Electronics, 194, (2022), 108335-1 - 108335-4 doi:10.1016/j.sse.2022.108335. BibTeX
74.	S. Selberherr, V. Sverdlov: "About electron transport and spin control in semiconductor devices"; Solid-State Electronics, 197, (invited) (2022), doi:10.1016/j.sse.2022.108443. BibTeX
73.	V. Sverdlov, H. Seiler, A.-M. El-Sayed, Yu. Illarionov, H. Kosina: "Edge Modes and Their Conductance in Narrow Nanoribbons of 2D Materials in a Topological Phase"; Solid-State Electronics, 193, (invited) (2022), 108266-1 - 108266-8 doi:10.1016/j.sse.2022.108266. BibTeX
72.	J. Ender, S. Fiorentini, R. Orio, W. Goes, V. Sverdlov, S. Selberherr: "Emerging CMOS Compatible Magnetic Memories and Logic"; IEEE Journal of the Electron Devices Society, 9, (invited) (2021), 456 - 463 doi:10.1109/JEDS.2021.3066679. BibTeX
71.	J. Ender, R. Orio, S. Fiorentini, S. Selberherr, W. Goes, V. Sverdlov: "Improving Failure Rates in Pulsed SOT-MRAM Switching by Reinforcement Learning"; Microelectronics Reliability, 126, (2021), 114231-1 - 114231-5 doi:10.1016/j.microrel.2021.114231. BibTeX
70.	J. Ender, R. Orio, S. Fiorentini, S. Selberherr, W. Goes, V. Sverdlov: "Reinforcement Learning Approach for Deterministic SOT-MRAM Switching"; Proceedings of SPIE, 11805, (invited) (2021), 1180519-1 - 1180519-8 doi:10.1117/12.2593937. BibTeX
69.	S. Fiorentini, J. Ender, S. Selberherr, R. Orio, W. Goes, V. Sverdlov: "Coupled Spin and Charge Drift-Diffusion Approach Applied to Magnetic Tunnel Junctions"; Solid-State Electronics, 186, (invited) (2021), 108103 doi:10.1016/j.sse.2021.108103. BibTeX
68.	R. Orio, J. Ender, S. Fiorentini, W. Gös, S. Selberherr, V. Sverdlov: "Numerical Analysis of Deterministic Switching of a Perpendicularly Magnetized Spin-Orbit Torque Memory Cell"; IEEE Journal of the Electron Devices Society, 9, (2021), 61 - 67 doi:10.1109/JEDS.2020.3039544. BibTeX
67.	R. Orio, J. Ender, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov: "Optimization of a Spin-Orbit Torque Switching Scheme Based on Micromagnetic Simulations and Reinforcement Learning"; Micromachines, 12, (2021), 443 doi:10.3390/mi12040443. BibTeX
66.	R. Orio, J. Ender, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov: "Two-Pulse Switching Scheme and Reinforcement Learning for Energy Efficient SOT-MRAM Simulations"; Solid-State Electronics, 185, (invited) (2021), 108075 doi:10.1016/j.sse.2021.108075. BibTeX
65.	V. Sverdlov, A.-M. El-Sayed, H. Seiler, H. Kosina, S. Selberherr: "Subbands in a Nanoribbon of Topologically Insulating MoS₂ in the 1T′ Phase"; Solid-State Electronics, 184, (invited) (2021), 108081-1 - 108081-9 doi:10.1016/j.sse.2021.108081. BibTeX
64.	S. Fiorentini, J. Ender, M. Mohamedou, S. Selberherr, R. Orio, W. Goes, V. Sverdlov: "Comprehensive Modeling of Coupled Spin-Charge Transport and Magnetization Dynamics in STT-MRAM Cells"; Proceedings of SPIE, 11470, (invited) (2020), 50 - 56 doi:10.1117/12.2567480. BibTeX
63.	S. Fiorentini, R. Orio, S. Selberherr, J. Ender, W. Goes, V. Sverdlov: "Analysis of Switching Under Fixed Voltage and Fixed Current in Perpendicular STT-MRAM"; IEEE Journal of the Electron Devices Society, 8, (invited) (2020), 1249 - 1256 doi:10.1109/JEDS.2020.3023577. BibTeX
62.	R. Orio, A. Makarov, W. Goes, J. Ender, S. Fiorentini, V. Sverdlov: "Two-Pulse Magnetic Field-Free Switching Scheme for Perpendicular SOT-MRAM with a Symmetric Square Free Layer"; Physica B: Condensed Matter, 578, (2020), 411743 doi:10.1016/j.physb.2019.411743. BibTeX
61.	R. Orio, A. Makarov, S. Selberherr, W. Goes, J. Ender, S. Fiorentini, V. Sverdlov: "Robust Magnetic Field-Free Switching of a Perpendicularly Magnetized Free Layer for SOT-MRAM"; Solid-State Electronics, 168, (2020), 107730-1 - 107730-7 doi:10.1016/j.sse.2019.107730. BibTeX
60.	V. Sverdlov, A.-M. El-Sayed, H. Kosina, S. Selberherr: "Ballistic Conductance in a Topological 1T '-MoS₂ Nanoribbon"; Semiconductors (Physics of Semiconductor Devices), 54, (invited) (2020), 1713 - 1715 doi:10.1134/S1063782620120386. BibTeX
59.	V. Sverdlov, A.-M. El-Sayed, H. Kosina, S. Selberherr: "Conductance in a Nanoribbon of Topologically Insulating MoS₂ in the 1T´ Phase"; IEEE Transactions on Electron Devices, 67, (2020), 4687 - 4690 doi:10.1109/TED.2020.3023921. BibTeX
58.	J. Ghosh, D. Osintsev, V. Sverdlov: "Efficient Two-Level Parallelization Approach to Evaluate Spin Relaxation in a Strained Thin Silicon fFilm"; Journal of Computational Electronics, 18, (2019), 28 - 36 doi:10.1007/s10825-018-1274-x. BibTeX
57.	R. Orio, S. Selberherr, V. Sverdlov: "Magnetic Field-Free Deterministic Switching of a Perpendicular Magnetic Layer by Spin-Orbit Torques"; Proceedings of SPIE, 11090, (invited) (2019), 110903F-1 - 110903F-6 doi:10.1117/12.2529119. BibTeX
56.	V. Sverdlov, A. Makarov, S. Selberherr: "Two-Pulse Sub-ns Switching Scheme for Advanced Spin-Orbit Torque MRAM"; Solid-State Electronics, 155, (2019), 49 - 56 doi:10.1016/j.sse.2019.03.010. BibTeX
55.	V. Sverdlov, S. Selberherr: "Current and Shot Noise at Spin-Dependent Hopping through Junctions with Ferromagnetic Contacts"; Solid-State Electronics, 159, (2019), 43 - 50 doi:10.1016/j.sse.2019.03.053. BibTeX
54.	V. Sverdlov, A. Makarov, S. Selberherr: "Reliable Sub-Nanosecond Switching of a Perpendicular SOT-MRAM Cell without External Magnetic Field"; Journal on Systemics, Cybernetics and Informatics, 16, (invited) (2018), 55 - 59. BibTeX
53.	V. Sverdlov, S. Selberherr: "Demands For Spin-based Nonvolatility In Emerging Digital Logic And Memory Devices For Low Power Computing"; Facta universitatis - series: Electronics and Energetics, 31, (invited) (2018), 529 - 545 doi:10.2298/FUEE1804529S. BibTeX
52.	V. Sverdlov, S. Selberherr: "Spin Correlations at Hopping in Magnetic Structures: From Tunneling Magnetoresistance to Single-Spin Transistor"; Proceedings of SPIE, 10732, (invited) (2018), 1073235-1 - 1073235-8 doi:10.1117/12.2319271. BibTeX
51.	V. Sverdlov, J. Weinbub, S. Selberherr: "Spintronics as a Non-Volatile Complement to Modern Microelectronics"; Informacije Midem - Journal of Microelectronics Electronic Components and Materials, 47, (invited) (2017), 195 - 210. BibTeX
50.	J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr: "Enhancement of Electron Spin Relaxation Time in Thin SOI Films by Spin Injection Orientation and Uniaxial Stress"; Journal of Nano Research, 39, (2016), 34 - 42 doi:10.4028/www.scientific.net/JNanoR.39.34. BibTeX
49.	A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr: "CMOS-Compatible Spintronic Devices: A Review"; Semiconductor Science and Technology, 31, (invited) (2016), 113006-1 - 113006-25 doi:10.1088/0268-1242/31/11/113006. BibTeX
48.	T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr: "Layer Coupling and Read Disturbances in a Buffered Magnetic Logic Environment"; Proceedings of SPIE, 9931, (invited) (2016), 99312M-1 - 99312M-12 doi:10.1117/12.2236151. BibTeX
47.	J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr: "Intersubband Spin Relaxation Reduction and Spin Lifetime Enhancement by Strain in SOI Structures"; Microelectronic Engineering, 147, (2015), 89 - 91 doi:10.1016/j.mee.2015.04.072. BibTeX
46.	D. Osintsev, V. Sverdlov, S. Selberherr: "Electron Mobility and Spin Lifetime Enhancement in Strained Ultra-Thin Silicon Films"; Solid-State Electronics, 112, (2015), 46 - 50 doi:10.1016/j.sse.2015.02.007. BibTeX
45.	V. Sverdlov, S. Selberherr: "Silicon Spintronics: Progress and Challenges"; Physics Reports, 585, (2015), 1 - 40 doi:10.1016/j.physrep.2015.05.002. BibTeX
44.	T. Windbacher, J. Ghosh, A. Makarov, V. Sverdlov, S. Selberherr: "Modelling of Multipurpose Spintronic Devices"; International Journal of Nanotechnology, 12, (2015), 313 - 331 doi:10.1504/IJNT.2015.067215. BibTeX
43.	T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr: "Influence of Magnetization Variations in the Free Layer on a Non-Volatile Magnetic Flip Flop"; Solid-State Electronics, 108, (2015), 2 - 7 doi:10.1016/j.sse.2014.12.023. BibTeX
42.	J. Ghosh, T. Windbacher, V. Sverdlov, S. Selberherr: "Spin Injection and Diffusion in Silicon Based Devices from a Space Charge Layer"; Journal of Applied Physics, 115, (2014), 17C503-1 - 17C503-3 doi:10.1063/1.4856056. BibTeX
41.	J. Ghosh, T. Windbacher, V. Sverdlov, S. Selberherr: "Spin Injection in a Semiconductor Through a Space-Charge Layer"; Solid-State Electronics, 101, (2014), 116 - 121 doi:10.1016/j.sse.2014.06.035. BibTeX
40.	H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr: "Reliability-Based Optimization of Spin-Transfer Torque Magnetic Tunnel Junction Implication Logic Gates"; Advanced Materials Research - Print/CD, 854, (2014), 89 - 95 doi:10.4028/www.scientific.net/AMR.854.89. BibTeX
39.	A. Makarov, V. Sverdlov, S. Selberherr: "Progress in Magnetoresistive Memory: Magnetic Tunnel Junctions with a Composite Free Layer"; International Journal of High Speed Electronics and Systems, 23, (invited) (2014), 1450014-1 - 1450014-15 doi:10.1142/S0129156414500141. BibTeX
38.	D. Osintsev, V. Sverdlov, S. Selberherr: "Acoustic Phonon and Surface Roughness Spin Relaxation Mechanisms in Strained Ultra-Scaled Silicon Films"; Advanced Materials Research - Print/CD, 854, (2014), 29 - 34 doi:10.4028/www.scientific.net/AMR.854.29. BibTeX
37.	T. Windbacher, A. Makarov, H. Mahmoudi, V. Sverdlov, S. Selberherr: "Novel Bias-Field-Free Spin Transfer Oscillator"; Journal of Applied Physics, 115, (2014), 17C901-1 - 17C901-3 doi:10.1063/1.4862936. BibTeX
36.	H. Mahmoudi, V. Sverdlov, S. Selberherr: "Influence of Geometry on the Memristive Behavior of Domain Wall Spintronic Memristors and its Applications for Measurement"; Journal of Superconductivity and Novel Magnetism, 26, (2013), 1745 - 1749 doi:10.1007/s10948-012-2034-y. BibTeX
35.	H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr: "Implication Logic Gates Using Spin-Transfer-Torque-Operated Magnetic Tunnel Junctions for Intrinsic Logic-In-Memory"; Solid-State Electronics, 84, (2013), 191 - 197 doi:10.1016/j.sse.2013.02.017. BibTeX
34.	H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr: "Reliability Analysis and Comparison of Implication and Reprogrammable Logic Gates in Magnetic Tunnel Junction Logic Circuits"; IEEE Transactions on Magnetics, 49, (2013), 5620 - 5628 doi:10.1109/TMAG.2013.2278683. BibTeX
33.	A. Makarov, V. Sverdlov, S. Selberherr: "Structural Optimization of MTJs with a Composite Free Layer"; Proceedings of SPIE, 8813, (invited) (2013), 88132Q-1 - 88132Q-9 doi:10.1117/12.2025568. BibTeX
32.	D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, S. Selberherr: "Subband Splitting and Surface Roughness Induced Spin Relaxation in (001) Silicon SOI MOSFETs"; Solid-State Electronics, 90, (2013), 34 - 38 doi:10.1016/j.sse.2013.02.055. BibTeX
31.	D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr: "Current and Conductance Modulation at Elevated Temperature in Silicon and InAs-based Spin Field-Effect Transistors"; Sains Malaysiana, 42, (2013), 205 - 211. BibTeX
30.	T. Windbacher, H. Mahmoudi, A. Makarov, V. Sverdlov, S. Selberherr: "Multiple Purpose Spin Transfer Torque Operated Devices"; Facta Universitatis, 26, (2013), 227 - 238 doi:10.2298/FUEE1303227W. BibTeX
29.	T. Windbacher, O. Triebl, D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr: "Simulation Study of an Electrically Read- and Writable Magnetic Logic Gate"; Microelectronic Engineering, 112, (2013), 188 - 192 doi:10.1016/j.mee.2012.12.030. BibTeX
28.	A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr: "Fast Switching in Magnetic Tunnel Junctions With Two Pinned Layers: Micromagnetic Modeling"; IEEE Transactions on Magnetics, 48, (2012), 1289 - 1292 doi:10.1109/TMAG.2011.2173565. BibTeX
27.	A. Makarov, V. Sverdlov, S. Selberherr: "Emerging Memory Technologies: Trends, Challenges, and Modeling Methods"; Microelectronics Reliability, 52, (invited) (2012), 628 - 634 doi:10.1016/j.microrel.2011.10.020. BibTeX
26.	D. Osintsev, V. Sverdlov, Z. Stanojevic, A. Makarov, S. Selberherr: "Temperature Dependence of the Transport Properties of Spin Field-Effect Transistors Built with InAs and Si Channels"; Solid-State Electronics, 71, (2012), 25 - 29 doi:10.1016/j.sse.2011.10.015. BibTeX
25.	F. Schanovsky, O. Baumgartner, V. Sverdlov, T. Grasser: "A Multi Scale Modeling Approach to Non-Radiative Multi Phonon Transitions at Oxide Defects in MOS Structures"; Journal of Computational Electronics, 11, (2012), 218 - 224 doi:10.1007/s10825-012-0403-1. BibTeX
24.	Z. Stanojevic, V. Sverdlov, O. Baumgartner, H. Kosina: "Subband Engineering in N-Type Silicon Nanowires using Strain and Confinement"; Solid-State Electronics, 70, (2012), 73 - 80 doi:10.1016/j.sse.2011.11.022. BibTeX
23.	O. Baumgartner, V. Sverdlov, T. Windbacher, S. Selberherr: "Perspectives of Silicon for Future Spintronic Applications from the Peculiarities of the Subband Structure in Thin Films"; IEEE Transactions on Nanotechnology, 10, (2011), 737 - 743 doi:10.1109/TNANO.2010.2074211. BibTeX
22.	A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr: "Reduction of Switching Time in Pentalayer Magnetic Tunnel Junctions with a Composite-Free Layer"; Physica Status Solidi - Rapid Research Letters, 5, (2011), 420 - 422 doi:10.1002/pssr.201105376. BibTeX
21.	A. Makarov, V. Sverdlov, S. Selberherr: "Stochastic Model of the Resistive Switching Mechanism in Bipolar Resistive Random Access Memory: Monte Carlo Simulations"; Journal of Vacuum Science & Technology B, 29, (2011), 01AD03-1 - 01AD03-5 doi:10.1116/1.3521503. BibTeX
20.	O. Baumgartner, M. Karner, V. Sverdlov, H. Kosina: "Electron Subband Structure in Strained Silicon UTB Films from the Hensel-Hasegawa-Nakayama Model - Part 2 Efficient Self-Consistent Numerical Solution of the k.p Schrödinger Equation"; Solid-State Electronics, 54, (2010), 143 - 148 doi:10.1016/j.sse.2009.12.010. BibTeX
19.	A. Makarov, V. Sverdlov, S. Selberherr: "Stochastic Modeling of Bipolar Resistive Switching in Metal-Oxide based Memory by Monte Carlo Technique"; Journal of Computational Electronics, 9, (2010), 146 - 152 doi:10.1007/s10825-010-0317-8. BibTeX
18.	T. Windbacher, V. Sverdlov, O. Baumgartner, S. Selberherr: "Electron Subband Structure in Strained Silicon UTB Films from the Hensel-Hasegawa-Nakayama Model - Part 1 Analytical Consideration and Strain-Induced Valley Splitting"; Solid-State Electronics, 54, (2010), 137 - 142 doi:10.1016/j.sse.2009.12.008. BibTeX
17.	V. Sverdlov, O. Baumgartner, T. Windbacher, S. Selberherr: "Modeling of Modern MOSFETs with Strain"; Journal of Computational Electronics, 8, (invited) (2009), 192 - 208 doi:10.1007/s10825-009-0291-1. BibTeX
16.	V. Sverdlov, T. Windbacher, F. Schanovsky, S. Selberherr: "Mobility Modeling in Advanced MOSFETs with Ultra-Thin Silicon Body under Stress"; Journal Integrated Circuits and Systems, 4, (2009), 55 - 60 doi:10.29292/jics.v4i2.298. BibTeX
15.	S. E. Tyaginov, V. Sverdlov, I. Starkov, W. Gös, T. Grasser: "Impact of O-Si-O Bond Angle Fluctuations on the Si-O Bond-Breakage Rate"; Microelectronics Reliability, 49, (2009), 998 - 1002 doi:10.1016/j.microrel.2009.06.018. BibTeX
14.	W. Gös, M. Karner, V. Sverdlov, T. Grasser: "Charging and Discharging of Oxide Defects in Reliability Issues"; IEEE Transactions on Device and Materials Reliability, 8, (2008), 491 - 500 doi:10.1109/TDMR.2008.2005247. BibTeX
13.	V. Sverdlov, G. Karlowatz, S. Dhar, H. Kosina, S. Selberherr: "Two-Band k.p Model for the Conduction Band in Silicon: Impact of Strain and Confinement on Band Structure and Mobility"; Solid-State Electronics, 52, (2008), 1563 - 1568 doi:10.1016/j.sse.2008.06.019. BibTeX
12.	V. Sverdlov, H. Kosina, S. Selberherr: "Comparative Analysis of Pseudo-Potential and Tight-Binding Band Structure Calculations with an Analytical Two-Band k·p Model: Conduction Band of Silicon"; Proceedings of SPIE, 7025, (2008), 70251I-1 - 70251I-8 doi:10.1117/12.802503. BibTeX
11.	V. Sverdlov, H. Kosina, S. Selberherr: "Electron Subband Dispersions in Ultra-Thin Silicon Films from a Two-Band k·p Theory"; Journal of Computational Electronics, 7, (2008), 164 - 167 doi:10.1007/s10825-008-0177-7. BibTeX
10.	V. Sverdlov, S. Selberherr: "Electron Subband Structure and Controlled Valley Splitting in Silicon Thin-Body SOI FETs: Two-Band k.p Theory and Beyond"; Solid-State Electronics, 52, (2008), 1861 - 1866 doi:10.1016/j.sse.2008.06.054. BibTeX
9.	V. Sverdlov, E. Ungersböck, H. Kosina, S. Selberherr: "Current Transport Models for Nanoscale Semiconductor Devices"; Materials Science and Engineering R-Reports, 58, (2008), 228 - 270 doi:10.1016/j.mser.2007.11.001. BibTeX
8.	V. Sverdlov, E. Ungersböck, H. Kosina: "Theoretical Electron Mobility Analysis in Thin-Body FETs: Dependence on Substrate Orientation and Biaxial Strain"; IEEE Transactions on Nanotechnology, 6, (2007), 334 - 340 doi:10.1109/TNANO.2007.894835. BibTeX
7.	V. Sverdlov, E. Ungersböck, H. Kosina, S. Selberherr: "Volume Inversion Mobility in SOI MOSFETs for Different Thin Body Orientations"; Solid-State Electronics, 51, (2007), 299 - 305 doi:10.1016/j.sse.2007.01.022. BibTeX
6.	E. Ungersböck, S. Dhar, G. Karlowatz, V. Sverdlov, H. Kosina, S. Selberherr: "The Effect of General Strain on the Band Structure and Electron Mobility of Silicon"; IEEE Transactions on Electron Devices, 54, (2007), 2183 - 2190 doi:10.1109/TED.2007.902880. BibTeX
5.	Y. Kinkhabwala, V. Sverdlov, A.N. Korotkov, K. Likharev: "A Numerical Study of Transport and Shot Noise in 2D Hopping"; Journal of Physics: Condensed Matter, 18, (2006), 1999 - 2012. BibTeX
4.	Y. Kinkhabwala, V. Sverdlov, K. Likharev: "A Numerical Study of Coulomb Interaction Effects on 2D Hopping Transport"; Journal of Physics: Condensed Matter, 18, (2006), 2013 - 2027. BibTeX
3.	V. Sverdlov, T. Grasser, H. Kosina, S. Selberherr: "Scattering and Space-Charge Effects in Wigner Monte Carlo Simulations of Single and Double Barrier Devices"; Journal of Computational Electronics, 5, (2006), 447 - 450 doi:10.1007/s10825-006-0041-6. BibTeX
2.	V. Sverdlov, H. Kosina, S. Selberherr: "Modeling Current Transport in Ultra-Scaled Field-Effect Transistors"; Microelectronics Reliability, 47, (invited) (2006), 11 - 19 doi:10.1016/j.microrel.2006.03.009. BibTeX
1.	V. Sverdlov, A. Gehring, H. Kosina, S. Selberherr: "Quantum Transport in Ultra-Scaled Double-Gate MOSFETs: A Wigner Function-Based Monte Carlo Approach"; Solid-State Electronics, 49, (2005), 1510 - 1515 doi:10.1016/j.sse.2005.07.013. BibTeX

Contributions to Books

55.	A.-M. El-Sayed, H. Seiler, H. Kosina, M. Jech, D. Waldhör, V. Sverdlov: "First Principles Evaluation of Topologically Protected Edge States in MoS$_{2}$ 1T′ Nanoribbons with Realistic Terminations"; in "Proceedings of the 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", B. Cretu (ed); IEEE, 2021, ISBN: 978-1-6654-3745-5, 1 - 4 doi:10.1109/EuroSOI-ULIS53016.2021.9560183. BibTeX
54.	T. Hadámek, M. Bendra, S. Fiorentini, J. Ender, R. Orio, W. Goes, S. Selberherr, V. Sverdlov: "Temperature Increase in MRAM at Writing: A Finite Element Approach"; in "Proceedings of the 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", B. Cretu (ed); IEEE, 2021, ISBN: 978-1-6654-3746-2, 1 - 4 doi:10.1109/EuroSOI-ULIS53016.2021.9560669. BibTeX
53.	V. Sverdlov, H. Seiler, A.-M. El-Sayed, H. Kosina: "Conductance due to the Edge Modes in Nanoribbons of 2D Materials in a Topological Phase"; in "Proceedings of the 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", B. Cretu (ed); IEEE, 2021, ISBN: 978-1-6654-3745-5, 1 - 4 doi:10.1109/EuroSOI-ULIS53016.2021.9560173. BibTeX
52.	S. Fiorentini, J. Ender, S. Selberherr, R. Orio, W. Goes, V. Sverdlov: "Comprehensive Modeling of Coupled Spin and Charge Transport through Magnetic Tunnel Junctions"; in "Proceedings of the 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", B. Cretu (ed); IEEE, 2020, ISBN: 978-1-7281-8765-5, 1 - 4 doi:10.1109/EUROSOI-ULIS49407.2020.9365497. BibTeX
51.	S. Fiorentini, R. Orio, S. Selberherr, J. Ender, W. Gös, V. Sverdlov: "Influence of Current Redistribution in Switching Models for Perpendicular STT-MRAM"; in "Advanced CMOS-Compatible Semiconductor Devices 19, Vol. 97, No. 5", issued by The Electrochemical Society; J. A. Martino, B.-Y. Nguyen, F. Gamiz, H. Ishii, J.-P. Raskin, S. Selberherr, E. Simoen (ed); ECS Transactions, 2020, ISBN: 978-1-62332-604-3, 159 - 164 doi:10.1149/09705.0159ecst. BibTeX
50.	R. Orio, J. Ender, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov: "Reduced Current Spin-Orbit Torque Switching of a Perpendicularly Magnetized Free Layer"; in "Proceedings of the 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", B. Cretu (ed); IEEE, 2020, ISBN: 978-1-7281-8765-5, 1 - 4 doi:10.1109/EUROSOI-ULIS49407.2020.9365283. BibTeX
49.	V. Sverdlov, A.-M. El-Sayed, S. Selberherr: "Subband Structure and Ballistic Conductance of a Molybdenum Disulfide Nanoribbon in Topological 1T´ Phase: A k·p Study"; in "Proceedings of the 27st International Conference Mixed Design of Integrated Circuits and Systems", A. Napieralski (ed); IEEE, 2020, ISBN: 978-83-63578-17-6, 168 - 171 doi:10.23919/MIXDES49814.2020.9155676. BibTeX
48.	V. Sverdlov, A.-M. El-Sayed, S. Selberherr, H. Kosina: "Topologically Protected and Conventional Subbands in a 1T´-MoS2 Nanoribbon Channel"; in "Proceedings of the 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", B. Cretu (ed); IEEE, 2020, ISBN: 978-1-7281-8765-5, 1 - 4 doi:10.1109/EUROSOI-ULIS49407.2020.9365289. BibTeX
47.	V. Sverdlov, S. Selberherr: "A Monte Carlo Evaluation of the Current and Low Frequency Current Noise at Spin-Dependent Hopping"; in "Large-Scale Scientific Computing, Lecture Notes in Computer Science", 11958, I. Lirkov, S. Margenov (ed); Springer International Publishing, 2020, ISBN: 978-3-030-41031-5, 446 - 453 doi:10.1007/978-3-030-41032-2_51. BibTeX
46.	R. Orio, A. Makarov, S. Selberherr, W. Goes, J. Ender, S. Fiorentini, V. Sverdlov: "Efficient Magnetic Field-Free Switching of a Symmetric Perpendicular Magnetic Free Layer for Advanced SOT-MRAM"; in "Proceedings of the 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", J. Lacord, M. Bawedin (ed); IEEE, 2019, ISBN: 978-1-7281-1658-7, 1 - 4 doi:10.1109/EUROSOI-ULIS45800.2019.9041920. BibTeX
45.	J. Ghosh, D. Osintsev, V. Sverdlov, S. Ganguly: "Multilevel Parallelization Approach to Estimate Spin Lifetime in Silicon: Performance Analysis"; in "Proceedings of the 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", F. Gamiz, V. Sverdlov, C. Sampedro, L. Donetti (ed); IEEE, 2018, ISBN: 978-1-5386-4812-4, 205 - 208 doi:10.1109/ULIS.2018.8354770. BibTeX
44.	A. Makarov, V. Sverdlov, S. Selberherr: "Ultra-Fast Switching of a Free Magnetic Layer with Out-of-Plane Magnetization in Spin-Orbit Torque MRAM Cells"; in "Advanced CMOS-Compatible Semiconductor Devices 18, Vol. 85, No. 8", issued by The Electrochemical Society; J. A. Martino, J.-P. Raskin, S. Selberherr, H. Ishii, F. Gamiz, B.-Y. Nguyen, A. Yoshino (ed); ECS Transactions, 2018, ISBN: 978-1-62332-488-9, 213 - 218 doi:10.1149/08508.0213ecst. BibTeX
43.	V. Sverdlov, A. Makarov, S. Selberherr: "Switching Current Reduction in Advanced Spin-Orbit Torque MRAM"; in "Proceedings of the 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", F. Gamiz, V. Sverdlov, C. Sampedro, L. Donetti (ed); IEEE, 2018, ISBN: 978-1-5386-4812-4, 161 - 164 doi:10.1109/ULIS.2018.8354759. BibTeX
42.	V. Sverdlov, S. Selberherr: "Current and Shot Noise at Spin-dependent Hopping in Magnetic Tunnel Junctions"; in "Proceedings of the 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", F. Gamiz, V. Sverdlov, C. Sampedro, L. Donetti (ed); IEEE, 2018, ISBN: 978-1-5386-4812-4, 33 - 36 doi:10.1109/ULIS.2018.8354727. BibTeX
41.	E. Gutierrez-Dominguez, F. Gamiz, V. Sverdlov, S. Selberherr, A. Torres-Jacome: "Device Physics, Modeling, and Technology for Nanoscaled Semiconductor Devices"; in "Nano-Scaled Semiconductor Technologies: Physics, Modelling, Characterisation, and Societal Impact", 27, E. Gutierrez-Dominguez (ed); Institution of Engineering and Technology, 2016, ISBN: 978-1-84919-930-8, 17 - 185 doi:10.1049/PBCS027E_ch2. BibTeX
40.	D. Osintsev, V. Sverdlov, S. Selberherr: "Electron Momentum and Spin Relaxation in Silicon Films"; in "Progress in Industrial Mathematics at ECMI 2014, Mathematics in Industry", 22, G. Russo, V. Capasso, G. Nicosia, V. Romano (ed); Springer International Publishing, (invited) 2016, ISBN: 978-3-319-23412-0, 695 - 700 doi:10.1007/978-3-319-23413-7_96. BibTeX
39.	V. Sverdlov, D. Osintsev, S. Selberherr: "Silicon-on-Insulator for Spintronic Applications: Spin Lifetime and Electric Spin Manipulation"; in "Nano Devices and Sensors", J. Liou, S.-K. Liaw, Y.-H. Chung (ed); De Gruyter, (invited) 2016, ISBN: 978-1-5015-1050-2, 29 - 48 doi:10.1515/9781501501531-003. BibTeX
38.	V. Sverdlov, S. Selberherr: "Influence of Spin Relaxation on Trap-assisted Resonant Tunneling in Ferromagnet-Oxide-Semiconductor Structures"; in "Proceedings of the 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", V. Sverdlov, S. Selberherr (ed); IEEE, 2016, ISBN: 978-1-4673-8608-1, 202 - 205 doi:10.1109/ULIS.2016.7440088. BibTeX
37.	T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr: "A Universal Nonvolatile Processing Environment"; in "Future Trends in Microelectronics - Journey into the Unknown", S. Luryi, J. Xu, A. Zaslavsky (ed); John Wiley & Sons, (invited) 2016, ISBN: 978-1-119-06911-9, 83 - 91 doi:10.1002/9781119069225.ch1-6. BibTeX
36.	J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr: "Variation of Spin Lifetime with Spin Injection Orientation in Strained Thin Silicon Films"; in "Advanced CMOS-Compatible Semiconductor Devices 17, Vol.66, No.5", issued by The Electrochemical Society; Y. Omura, J. A. Martino, J.-P. Raskin, S. Selberherr, H. Ishii, F. Gamiz, B.-Y. Nguyen (ed); ECS Transactions, 2015, ISBN: 978-1-62332-238-0, 233 - 240 doi:10.1149/06605.0233ecst. BibTeX
35.	J. Ghosh, D. Osintsev, V. Sverdlov, J. Weinbub, S. Selberherr: "Evaluation of Spin Lifetime in Thin-Body FETs: A High Performance Computing Approach"; in "Large-Scale Scientific Computing, Lecture Notes in Computer Science", 9374, I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer International Publishing, 2015, ISBN: 978-3-319-26519-3, 285 - 292 doi:10.1007/978-3-319-26520-9_31. BibTeX
34.	H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr: "Stateful STT-MRAM-Based Logic for Beyond-Von Neumann Computing"; in "Stateful STT-MRAM-Based Logic for Beyond-Von Neumann Computing", issued by CRC Press; T. Brozek (ed); CRC Press, 2015, ISBN: 978-1-4822-1490-1, 221 - 259 doi:10.1201/b17597. BibTeX
33.	A. Makarov, V. Sverdlov, S. Selberherr: "Progress in Magnetoresistive Memory: Magnetic Tunnel Junctions with a Composite Free Layer"; in "Frontiers in Electronics", S. Cristoloveanu, M. Shur (ed); World Scientific Publishing Co., (invited) 2015, ISBN: 978-981-4651-76-9, 1 - 15 doi:10.1142/9789814656917_0001. BibTeX
32.	V. Sverdlov, S. Selberherr: "Spin-Based CMOS-Compatible Devices"; in "Large-Scale Scientific Computing, Lecture Notes in Computer Science", 9374, I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer International Publishing, (invited) 2015, ISBN: 978-3-319-26519-3, 42 - 49 doi:10.1007/978-3-319-26520-9_4. BibTeX
31.	V. Sverdlov, S. Selberherr: "Spin-Based Silicon and CMOS-Compatible Devices"; in "Advanced CMOS-Compatible Semiconductor Devices 17, Vol.66, No.5", issued by The Electrochemical Society; Y. Omura, J. A. Martino, J.-P. Raskin, S. Selberherr, H. Ishii, F. Gamiz, B.-Y. Nguyen (ed); ECS Transactions, (invited) 2015, ISBN: 978-1-62332-238-0, 223 - 231 doi:10.1149/06605.0223ecst. BibTeX
30.	T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr: "Novel Buffered Magnetic Logic Gate Grid"; in "Silicon Compatible Materials, and Technologies for Advanced Integrated Processes, Circuits and Emerging Applications 5, Vol. 66, No. 4", issued by The Electrochemical Society; F. Roozeboom, V. Narayanan, K. Kakushima, P. Timans, E. Gusev, Z. Karim, S. DeGendt (ed); ECS Transactions, 2015, ISBN: 978-1-62332-237-3, 295 - 303 doi:10.1149/06604.0295ecst. BibTeX
29.	J. Ghosh, V. Sverdlov, S. Selberherr: "Spin Diffusion and the Role of Screening Effects in Semiconductors"; in "The 17th International Workshop on Computational Electronics (IWCE)", IEEE Xplore, 2014, ISBN: 978-1-4799-5433-9, 1 - 4 doi:10.1109/IWCE.2014.6865825. BibTeX
28.	H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr: "Compact Modeling of Memristive IMP Gates for Reliable Stateful Logic Design"; in "Proceedings of the 21st International Conference Mixed Design of Integrated Circuits and Systems", A. Napieralski (ed); Department of Microelectronics and Computer Science, Lodz University of Technology, Poland, 2014, ISBN: 978-83-63578-04-6, 58 - 61. BibTeX
27.	A. Makarov, V. Sverdlov, S. Selberherr: "Composite Magnetic Tunnel Junctions for Fast Memory Devices and Efficient Spin-Torque Nano-Oscillators"; in "Future Information Engineering", G. Lee (ed); WITPRESS, 2014, ISBN: 978-1-84564-855-8, 391 - 398 doi:10.2495/ICIE130451. BibTeX
26.	D. Osintsev, V. Sverdlov, N. Neophytou, S. Selberherr: "Valley Splitting and Spin Lifetime Enhancement in in Strained Thin Silicon Films"; in "The 17th International Workshop on Computational Electronics (IWCE)", IEEE Xplore, 2014, ISBN: 978-1-4799-5433-9, 1 - 4 doi:10.1109/IWCE.2014.6865824. BibTeX
25.	D. Osintsev, V. Sverdlov, S. Selberherr: "Uniaxial Shear Strain as a Mechanism to Increase Spin Lifetime in Thin Film of a SOI-based Silicon Spin FETs"; in "Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting", A. Nazarov, B. Francis, K. Valeriya, D. Flandre (ed); Springer International Publishing, 2014, ISBN: 978-3-319-08803-7, 127 - 149 doi:10.1007/978-3-319-08804-4_7. BibTeX
24.	V. Sverdlov, J. Ghosh, D. Osintsev, S. Selberherr: "Modeling Silicon Spintronics"; in "Recent Advances in Mathematical Methods in Applied Sciences", Y. Senichenkov, V. Korablev, I. Chernorytski, N. Korovkin, S. Pozdnjkov, K. Ntalianis (ed); Mathematics and Computers in Science and Engineering Series \| 32, 2014, ISBN: 978-1-61804-251-4, 195 - 198. BibTeX
23.	V. Sverdlov, H. Mahmoudi, A. Makarov, S. Selberherr: "Magnetic Tunnel Junctions for Future Memory and Logic-in-Memory Applications"; in "Proceedings of the 21st International Conference Mixed Design of Integrated Circuits and Systems", A. Napieralski (ed); Department of Microelectronics and Computer Science, Lodz University of Technology, Poland, 2014, ISBN: 978-83-63578-04-6, 30 - 33. BibTeX
22.	T. Windbacher, A. Makarov, H. Mahmoudi, V. Sverdlov, S. Selberherr: "Frequency Dependence Study of a Bias Field-Free Nano-Scale Oscillator"; in "The 17th International Workshop on Computational Electronics (IWCE)", IEEE Xplore, 2014, ISBN: 978-1-4799-5433-9, 1 - 4 doi:10.1109/IWCE.2014.6865862. BibTeX
21.	A. Makarov, V. Sverdlov, S. Selberherr: "Magnetic Tunnel Junctions with a Composite Free Layer: A New Concept for Future Universal Memory"; in "Future Trends in Microelectronics - Frontiers and Innovations", S. Luryi, J. Xu, A. Zaslavsky (ed); John Wiley & Sons, (invited) 2013, ISBN: 978-1118-44216-6, 93 - 101 doi:10.1002/9781118678107.ch6. BibTeX
20.	D. Osintsev, V. Sverdlov, S. Selberherr: "Spin Lifetime Enhancement by Shear Strain in Thin Silicon-on-Insulator Films"; in "Advanced Semiconductor-on-Insulator Technology and Related Physics 16, Vol. 53, No. 5", issued by The Electrochemical Society; Y. Omura, F. Gamiz, B.-Y. Nguyen, H. Ishii, J. A. Martino, S. Selberherr, J.-P. Raskin (ed); ECS Transactions, 2013, ISBN: 978-1-62332-027-0, 203 - 208 doi:10.1149/05305.0203ecst. BibTeX
19.	A. Makarov, V. Sverdlov, S. Selberherr: "MTJs with a Composite Free Layer for High-Speed Spin Transfer Torque RAM: Micromagnetic Simulations"; in "The 15th International Workshop on Computational Electronics (IWCE)", IEEE Xplore, 2012, ISBN: 978-1-4673-0705-5, 1 - 4 doi:10.1109/IWCE.2012.6242842. BibTeX
18.	A. Makarov, V. Sverdlov, S. Selberherr: "New Trends in Microelectronics: Towards an Ultimate Memory Concept"; in "The 8th International Caribbean Conference on Devices, Circuits and Systems", IEEE Xplore, 2012, ISBN: 978-1-4577-1116-9, 1 - 4 doi:10.1109/ICCDCS.2012.6188899. BibTeX
17.	D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, S. Selberherr: "Reduction of Surface Roughness Induced Spin Relaxation in SOI MOSFETs"; in "The 15th International Workshop on Computational Electronics (IWCE)", IEEE Xplore, 2012, ISBN: 978-1-4673-0705-5, 1 - 4 doi:10.1109/IWCE.2012.6242850. BibTeX
16.	D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr: "Efficient Simulations of the Transport Properties of Spin Field-Effect Transistors Built on Silicon Fins"; in "Large-Scale Scientific Computing, Lecture Notes in Computer Science", 7116, I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer Berlin Heidelberg, 2012, ISBN: 978-3-642-29842-4, 630 - 637 doi:10.1007/978-3-642-29843-1_72. BibTeX
15.	A. Makarov, V. Sverdlov, S. Selberherr: "Modeling of the SET and RESET Process in Bipolar Resistive Oxide-Based Memory Using Monte Carlo Simulations"; in "Numerical Methods and Applications, Lecture Notes in Computer Science", 6046, I. Dimov, S. Dimova, N. T. Kolkovska (ed); Springer Berlin Heidelberg, 2011, ISBN: 978-3-642-18465-9, 87 - 94 doi:10.1007/978-3-642-18466-6_9. BibTeX
14.	D. Osintsev, V. Sverdlov, Z. Stanojevic, A. Makarov, J. Weinbub, S. Selberherr: "Properties of Silicon Ballistic Spin Fin-Based Field-Effect Transistors"; in "Advanced Semiconductor-on-Insulator Technology and Related Physics 15, Vol.35, No.5", issued by The Electrochemical Society; Y. Omura, H. Ishii, B.-Y. Nguyen, S. Selberherr, F. Gamiz, J. A. Martino, J.-P. Raskin (ed); ECS Transactions, 2011, ISBN: 978-1-56677-866-4, 277 - 282 doi:10.1149/1.3570806. BibTeX
13.	T. Windbacher, V. Sverdlov, S. Selberherr: "Classical Device Modeling"; in "Nano-Electronic Devices: Semiclassical and Quantum Transport Modeling", D. Vasileska, S.M. Goodnick (ed); Springer New York, (invited) 2011, ISBN: 978-1-4419-8839-3, 1 - 96 doi:10.1007/978-1-4419-8840-9_1. BibTeX
12.	V. Sverdlov, O. Baumgartner, T. Windbacher, S. Selberherr: "Silicon for Spintronic Applications: Strain-Enhanced Valley Splitting"; in "Future Trends in Microelectronics", S. Luryi, J. Xu, A. Zaslavsky (ed); John Wiley & Sons, (invited) 2010, ISBN: 978-0-470-55137-0, 281 - 291 doi:10.1002/9780470649343.ch24. BibTeX
11.	M. Vasicek, V. Sverdlov, J. Cervenka, T. Grasser, H. Kosina, S. Selberherr: "Transport in Nanostructures: A Comparative Analysis Using Monte Carlo Simulation, the Spherical Harmonic Method, and Higher Moments Models"; in "Large-Scale Scientific Computing, Lecture Notes in Computer Science", 5910, I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer Berlin Heidelberg, 2010, ISBN: 978-3-642-12534-8, 443 - 450 doi:10.1007/978-3-642-12535-5_52. BibTeX
10.	T. Windbacher, V. Sverdlov, S. Selberherr: "Biotin-Streptavidin Sensitive BioFETs and Their Properties"; in "Biomedical Engineering Systems and Technologies, Communications in Computer and Information Scienc", 52, A. Fred, J. Filipe, H. Gamboa (ed); Springer Berlin Heidelberg, 2010, ISBN: 978-3-642-11720-6, 85 - 95 doi:10.1007/978-3-642-11721-3_6. BibTeX
9.	V. Sverdlov, E. Ungersböck, H. Kosina: "Monte Carlo Algorithm for Mobility Calculations in Thin Body Field Eﬀect Transistors: Role of Degeneracy and Intersubband Scattering"; in "Large-Scale Scientific Computing, Lecture Notes in Computer Science", 4818, I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer Berlin Heidelberg, 2008, ISBN: 978-80-86407-12-8, 157 - 164 doi:10.1007/978-3-540-78827-0_16. BibTeX
8.	V. Sverdlov, H. Kosina, T. Grasser, S. Selberherr: "Self-Consistent Wigner Monte Carlo Simulations of Current in Emerging Nanodevices: Role of Tunneling and Scattering"; in "28^th International Conference on the Physics of Semiconductors", American Institute of Physics, 2007, ISBN: 978-0-7354-0397-0, 1395 - 1396 doi:10.1063/1.2730425. BibTeX
7.	V. Sverdlov, E. Ungersböck, H. Kosina: "Mobility Modeling in SOI FETs for Different Substrate Orientations and Strain Conditions"; in "Nanoscaled Semiconductor-on-Insulator Structures and Devices", S. Hall, A. Nazarov, V. Lysenko (ed); Springer Netherlands, 2007, ISBN: 978-1-4020-6378-7, 357 - 362 doi:10.1007/978-1-4020-6380-0_23. BibTeX
6.	V. Sverdlov, E. Ungersböck, H. Kosina: "Monte Carlo Algorithm for Mobility Calculations in Thin Body Field Effect Transistors: Role of Degeneracy and Intersubband Scattering"; in "Large-Scale Scientific Computing, Lecture Notes in Computer Science", 4818, I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer Berlin Heidelberg, 2007, ISBN: 978-3-540-78825-6, 157 - 164 doi:10.1007/978-3-540-78827-0_16. BibTeX
5.	E. Ungersböck, V. Sverdlov, H. Kosina, S. Selberherr: "Low-Field Mobility in Strained Silicon Inversion Layers and UTB MOSFETs for Different Substrate Orientations"; in "28^th International Conference on the Physics of Semiconductors", American Institute of Physics, 2007, ISBN: 978-0-7354-0397-0, 1389 - 1390 doi:10.1063/1.2730422. BibTeX
4.	V. Sverdlov, H. Kosina, Ch. Ringhofer, M. Nedjalkov, S. Selberherr: "Quantum Correction to the Semiclassical Electron-Phonon Scattering Operator"; in "Large-Scale Scientific Computing, Lecture Notes in Computer Science", 3743, I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer Berlin Heidelberg, 2006, ISBN: 3-540-31994-8, 594 - 601 doi:10.1007/11666806_68. BibTeX
3.	E. Ungersböck, V. Sverdlov, H. Kosina, S. Selberherr: "Low-Field Electron Mobility in Stressed UTB SOI MOSFETs for Different Substrate Orientations"; in "SiGe and Ge: Materials, Processing, and Devices, Vol. 3, No. 7", issued by The Electrochemical Society; D. Harame, J. Boquet, M. Caymax, J. Cressler, H. Iwai, S. Koester, G. Masini, J. Murota, A. Reznicek, K. Rim, B. Tillack, S. Zaima (ed); ECS Transactions, 2006, ISBN: 1-56677-507-8, 45 - 54 doi:10.1149/1.2355793. BibTeX
2.	E. Ungersböck, V. Sverdlov, H. Kosina, S. Selberherr: "Modeling of Advanced Semiconductor Devices"; in "Microelectronics Technology and Devices - SBMICRO 2006, Vol. 4 No. 1", issued by The Electrochemical Society; J. A. Diniz, P. French, N. Morimoto, J. W. Swart, D. De Lima Monteiro (ed); ECS Transactions, (invited) 2006, ISBN: 1-56677-512-4, 207 - 216 doi:10.1149/1.2813493. BibTeX
1.	V. Sverdlov, Y. Kinkhabwala, D. Kaplan, A.N. Korotkov, H. Kosina, S. Selberherr: "Shot Noise Suppression and Enhancement at 2D Hopping and in Single-Electron Arrays"; in "Unsolved Problems of Noise and Fluctuations", issued by New York; American Institute of Physics, New York, 2005, ISBN: 0-7354-0289-2, 177 - 182. BibTeX

Talks and Poster Presentations (with Proceedings-Entry)

344.	S. Fiorentini, W.J. Loch, M. Bendra, N. Jørstad, J. Ender, R. Orio, T. Hadámek, W. Goes, V. Sverdlov, S. Selberherr: "Design Analysis of Ultra-Scaled MRAM Cells"; Talk: 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology, Nanjing, China; (invited) 2022-10-25 - 2022-10-28; in "Proceedings of 2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)", (2022), ISBN: 978-1-6654-6905-0, . BibTeX
343.	V. Sverdlov, M. Bendra, S. Fiorentini, J. Ender, R. Orio, T. Hadámek, W.J. Loch, N. Jørstad, W. Goes, S. Selberherr: "Modeling Advanced Spintronic Based Magnetoresistive Memory"; Talk: International Conference on Microwave & THz Technologies, Wireless Communications and OptoElectronics (IRPhE 2022), Yerevan, Armenia; (invited) 2022-09-27 - 2022-09-29; in "Book of Abstracts of the International Conference on Microwave & THz Technologies and Optoelectronics (IRPhE)", (2022), . BibTeX
342.	S. Fiorentini, M. Bendra, J. Ender, R. Orio, W. Goes, S. Selberherr, V. Sverdlov: "Spin Torques in ULTRA-Scaled MRAM Devices"; Talk: IEEE European Solid-State Device Research Conference (ESSDERC), Mailand; 2022-09-20 - 2022-09-22; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2022), ISBN: 978-1-6654-8496-1, 348 - 351. BibTeX
341.	S. Fiorentini, J. Ender, R. Orio, S. Selberherr, W. Goes, V. Sverdlov: "Comprehensive Evaluation of Torques in Ultra Scaled MRAM Devices"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022), Granada, Spain; 2022-09-06 - 2022-09-08; in "SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet", (2022), 11 - 12. BibTeX
340.	T. Hadámek, W. Goes, S. Selberherr, V. Sverdlov: "Modeling Thermal Effects in STT-MRAM"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022), Granada, Spain; 2022-09-06 - 2022-09-08; in "SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet", (2022), 11 - 12. BibTeX
339.	S. Selberherr, V. Sverdlov: "About Electron Transport and Spin Control in Semiconductor Devices"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022), Granada, Spain; (invited) 2022-09-06 - 2022-09-08; in "SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet", (2022), 1 - 4. BibTeX
338.	V. Sverdlov: "Modeling Ultra-Scaled Magnetoresistive Memory Cells"; 3rd Global Webinar on Nanoscience & Nanotechnology, online; (invited) 2022-07-18 in "3rd Global Webinar on Nanoscience & Nanotechnology", (2022), . BibTeX
337.	V. Sverdlov, H. Seiler, A.-M. El-Sayed, Yu. Illarionov, H. Kosina, S. Selberherr: "Edge Modes in Narrow Nanoribbons of Transition Metal Dichalcogenides in a Topological 1T"; Talk: International Conference on Physics and its Application, San Francisco, USA; (invited) 2022-07-18 - 2022-07-21; in "International Conference on Physics and its Application 2022", (2022), 36 - 37. BibTeX
336.	S. Fiorentini, J. Ender, S. Selberherr, W. Goes, V. Sverdlov: "Spin Transfer Torque Evaluation Based on Coupled Spin and Charge Transport: A Finite Element Method Approach"; Talk: 26th World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI 2022), online; 2022-07-12 - 2022-07-15; in "The 26th World Multi-Conference on Systemics, Cybernetics and Informatics: WMSCI 2022. Proceedings Volume II", (2022), 20, 4, 40 - 44. BibTeX
335.	Yu. Illarionov, B. Uzlu, T. Knobloch, A. Banshchikov, V. Sverdlov, M. Vexler, N. S. Sokolov, M. Waltl, Z. Wang, D. Neumaier, M. Lemme, T. Grasser: "CVD-GFETs with Record-small Hysteresis Owing to 2nm Epitaxial CaF2 Insulators"; Talk: Device Research Conference (DRC), Columbus, OH; 2022-06-26 - 2022-06-29; in "Proceedings of the Device Research Conference (DRC)", (2022), ISBN: 978-1-6654-9883-8, 121 - 122. BibTeX
334.	V. Sverdlov, W. Loch, M. Bendra, S. Fiorentini, J. Ender, R. Orio, T. Hadámek, N. Jorstad, W. Goes, S. Selberherr: "Modeling Approach to Ultra-Scaled MRAM Cells"; Talk: ASETMEET2022 International Meet On Applied Science, Engineering and Technology, Taastrup, Copenhagen; (invited) 2022-06-23 - 2022-06-25; in "Book of Abstracts of the International Meet On Applied Science, Engineering and Technology (ASETMEET)", (2022), 7 - 8. BibTeX
333.	T. Hadámek, S. Fiorentini, M. Bendra, R. Orio, W.J. Loch, N. Jorstad, S. Selberherr, W. Goes, V. Sverdlov: "Temperature Modeling in STT-MRAM:A Fully Three-Dimensional Finite Element Approach"; Talk: 16th International Conference on Nanostructured Materials, Sevilla, Spain; 2022-06-06 - 2022-06-10; in "Book of Abstracts of the International Conference on Nanostructured Materials (NANO)", (2022), . BibTeX
332.	N. Jørstad, S. Fiorentini, S. Selberherr, W. Goes, V. Sverdlov: "Modeling Interfacial and Bulk Spin-Orbit torques"; Talk: 16th International Conference on Nanostructured Materials, Sevilla, Spain; 2022-06-06 - 2022-06-10; in "Book of Abstracts of the International Conference on Nanostructured Materials (NANO)", (2022), . BibTeX
331.	W.J. Loch, S. Selberherr, V. Sverdlov: "Simulation of Novel MRAM Devices with Enhanced Performance"; Talk: 16th International Conference on Nanostructured Materials, Sevilla, Spain; 2022-06-06 - 2022-06-10; in "Book of Abstracts of the International Conference on Nanostructured Materials (NANO)", (2022), . BibTeX
330.	R. Orio, J. Ender, W. Goes, S. Fiorentini, S. Selberherr, V. Sverdlov: "About the Switching Energy of a Magnetic Tunnel Junction determined by Spin-Orbit Torque and Voltage-Controlled Magnetic Anisotropy"; Talk: 2022 IEEE Latin American Electron Devices Conference (LAEDC), Puebla, Mexico; 2022-06-04 - 2022-06-06; in "2022 IEEE Latin American Electron Devices Conference (LAEDC)", (2022), ISBN: 978-1-6654-9768-8, 1 - 4 doi:10.1109/LAEDC54796.2022.9908222. BibTeX
329.	V. Sverdlov, M. Bendra, S. Fiorentini, J. Ender, R. Orio, T. Hadámek, W.J. Loch, N. Jørstad, W. Goes, S. Selberherr: "Emerging Devices for Digital Spintronics"; 2nd Global Conference & Expo on Nanotechnology & Nanoscience, online; (invited) 2022-05-25 - 2022-05-26; in "2nd Global Conference & Expo on Nanotechnology & Nanoscience", (2022), 32 - 33. BibTeX
328.	M. Bendra, S. Fiorentini, J. Ender, R. Orio, T. Hadámek, W.J. Loch, N. Jørstad, S. Selberherr, W. Goes, V. Sverdlov: "Spin Transfer Torques in Ultra-Scaled MRAM Cells"; Talk: MIPRO 2022, Opatija, Croatia; 2022-05-23 - 2022-05-27; in "2022 45th Jubilee International Convention on Information, Communication and Electronic Technology (MIPRO)", (2022), ISBN: 978-953-233-103-5, 129 - 132. BibTeX
327.	V. Sverdlov, M. Bendra, S. Fiorentini, J. Ender, R. Orio, T. Hadámek, W.J. Loch, N. Jørstad, S. Selberherr: "Modeling Advanced Magnetoresistive Memory: A Journey from Finite Element Methods to Machine Learning Approaches"; 2 nd Global Webinar on Nanoscience & Nanotechnology, online; (invited) 2022-03-14 - 2022-03-15; in "2nd Global Webinar on Nanoscience & Nanotechnology", (2022), . BibTeX
326.	N. Jørstad, S. Fiorentini, W. Goes, V. Sverdlov: "Efficient Finite Element Method Approach to Model Spin Orbit Torque MRAM"; Talk: International MOS-AK Workshop, Silicon Valley, USA; 2021-12-17 in "Proceedings of the 14th International MOS-AK Workshop", (2021), 1. BibTeX
325.	S. Fiorentini, M. Bendra, J. Ender, R. Orio, S. Selberherr, W. Goes, V. Sverdlov: "Design Support for Ultra-Scaled MRAM Cells"; Poster: IEEE International Electron Devices Meeting (IEDM), San Francisco, USA; 2021-12-13 - 2021-12-15; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM) Special Poster Session Dedicated to MRAM", (2021), 1 page(s) . BibTeX
324.	A.-M. El-Sayed, H. Seiler, H. Kosina, S. Selberherr, V. Sverdlov: "Ab-initio Calculations of Edge States in Topological 1T′ MoS₂ Nanoribbons"; Talk: 2021 Workshop on Innovative Nanoscale Devices and Systems (WINDS2021), Hawaii, USA; 2021-11-28 - 2021-12-03; in "WINDS Book of Abstracts", (2021), ISBN: 978-3-9504738-3-4, 79 - 80. BibTeX
323.	S. Fiorentini, R. Orio, S. Selberherr, J. Ender, W. Goes, V. Sverdlov: "Spin and Charge Drift-Diffusion Approach to Torque Computation in Spintronic Devices"; Talk: 2021 Workshop on Innovative Nanoscale Devices and Systems (WINDS2021), Kona; 2021-11-28 - 2021-12-03; in "WINDS Book of Abstracts", (2021), ISBN: 978-3-9504738-3-4, 12 - 13. BibTeX
322.	J. Ender, R. Orio, V. Sverdlov: "Enhancing SOT-MRAM Switching Using Machine Learning"; Talk: Silvaco Users Global Event (SURGE), Santa Clara, CA, USA - virtual; (invited) 2021-10-14 in "Proceedings of the Silvaco Users Global Event (SURGE)", (2021), 1. BibTeX
321.	J. Ender, S. Fiorentini, R. Orio, T. Hadámek, M. Bendra, W. Goes, S. Selberherr, V. Sverdlov: "Advanced Modeling of Emerging MRAM: From Finite Element Methods to Machine Learning Approaches"; Talk: International Conference Micro- and Nanoelectronics (ICMNE), Moscow-Zvenigorod, Russia; (invited) 2021-10-04 - 2021-10-08; in "Proceedings of the International Conference Micro- and Nanoelectronics (ICMNE)", (2021), ISBN: 978-5-317-06675-8, . BibTeX
320.	J. Ender, R. Orio, S. Fiorentini, S. Selberherr, W. Gös, V. Sverdlov: "Improving Failure Rates in Pulsed SOT-MRAM Switching by Reinforcement Learning"; Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Bordeaux, France; 2021-10-04 - 2021-10-07; in "Proceedings of the 32nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2021), ISSN: 0026-2714, 1 - 4 doi:10.1016/j.microrel.2021.114231. BibTeX
319.	M. Bendra, J. Ender, S. Fiorentini, T. Hadámek, R. Orio, W. Goes, S. Selberherr, V. Sverdlov: "Finite Element Method Approach to MRAM Modeling"; Talk: International Convention on Information, Communication and Electronic Technology (MIPRO), Opatija, Croatia; 2021-09-27 - 2021-10-01; in "Proceedings of the International Convention on Information, Communication and Electronic Technology (MIPRO)", (2021), ISBN: 978-953-233-101-1, 70 - 73 doi:10.23919/MIPRO52101.2021.9597194. BibTeX
318.	J. Ender, R. Orio, S. Fiorentini, S. Selberherr, W. Goes, V. Sverdlov: "Reinforcement Learning Approach for Sub-Critical Current SOT-MRAM Switching Materials"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Dallas, Texas (USA); 2021-09-27 - 2021-09-29; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2021), 150 - 154 doi:10.1109/SISPAD54002.2021.9592561. BibTeX
317.	S. Fiorentini, J. Ender, R. Orio, S. Selberherr, W. Goes, V. Sverdlov: "Spin and Charge Drift-Diffusion Approach to Torque Computation in Magnetic Tunnel Junctions"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Dallas, Texas (USA); 2021-09-27 - 2021-09-29; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2021), 155 - 158 doi:10.1109/SISPAD54002.2021.9592559. BibTeX
316.	J. Ender, R. Orio, S. Fiorentini, S. Selberherr, W. Goes, V. Sverdlov: "Reinforcement Learning to Reduce Failures in SOT-MRAM Switching"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2021-09-15 - 2021-10-15; in "Proceedings of the IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2021), ISBN: 978-1-6654-3988-6, doi:10.1109/IPFA53173.2021.9617362. BibTeX
315.	V. Sverdlov, A.-M. El-Sayed, H. Kosina, S. Selberherr: "Ballistic Conductance, k. p Hamiltonian, Nanoribbons, Subbands, Topological Insulators (TIs), Topologically Protected Edge States"; Talk: European Solid-State Device Research Conference (ESSDERC), Grenoble, France; 2021-09-13 - 2021-09-17; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC), TEDbrief Special Edition", (2021), . BibTeX
314.	R. Orio, J. Ender, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov: "Deterministic Spin-Orbit Switching Scheme for an Array of Perpendicular MRAM Cells Suitable for Large Scale Integration"; Talk: Trends in Magnetism (TMAG), Cefalù, Italy; 2021-09-06 - 2021-09-10; in "Proceedings of the Trends in Magnetism Conference (TMAG)", (2021), . BibTeX
313.	A.-M. El-Sayed, H. Seiler, H. Kosina, V. Sverdlov: "First Principles Approach to Study Topologically Protected Edge States in 1T′ MoS₂ Nanoribbons"; Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France; 2021-09-01 - 2021-09-03; in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2021), 113 - 114. BibTeX
312.	T. Hadámek, M. Bendra, S. Fiorentini, J. Ender, R. Orio, W. Goes, S. Selberherr, V. Sverdlov: "Temperature Increase in MRAM at Writing: A Finite Element Approach"; Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France; 2021-09-01 - 2021-09-03; in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2021), 133 - 134. BibTeX
311.	V. Sverdlov, H. Seiler, A.-M. El-Sayed, H. Kosina: "Conductance of Edge Modes in Nanoribbons of 2D Materials in a Topological Phase"; Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France; 2021-09-01 - 2021-09-03; in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2021), 52 - 53. BibTeX
310.	J. Ender, S. Fiorentini, V. Sverdlov, W. Goes, R. Orio, S. Selberherr: "Reinforcement Learning Approach for Deterministic SOT-MRAM Switching"; Talk: SPIE Spintronics, San Diego, CA, USA - virtual; (invited) 2021-08-01 - 2021-08-05; in "Proceedings of SPIE Spintronics", (2021), 11805-53. BibTeX
309.	T. Hadámek, S. Selberherr, W. Goes, V. Sverdlov: "Heating Asymmetry in Magnetoresistive Random Access Memories"; Talk: World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI), Orlando, Florida, USA (Virtual); 2021-07-18 - 2021-07-21; in "Proceedings of the World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI)", (2021), ISBN: 978-1-950492-55-8, 63 - 66. BibTeX
308.	J. Ender, S. Fiorentini, S. Selberherr, W. Goes, V. Sverdlov: "Advanced Modeling of Emerging Nonvolatile Magnetoresistive Devices"; Talk: International Workshop on Computational Nanotechnology (IWCN), Daejeon, Korea (Virtual); (invited) 2021-05-24 - 2021-06-06; in "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2021), ISBN: 978-89-89453-30-7, 45 - 46. BibTeX
307.	S. Fiorentini, J. Ender, R. Orio, S. Selberherr, W. Goes, V. Sverdlov: "Spin Drift-Diffusion Approach for the Computation of Torques in Multi-Layered Structures"; Talk: International Workshop on Computational Nanotechnology (IWCN), Daejeon, Korea (Virtual); 2021-05-24 - 2021-06-06; in "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2021), ISBN: 978-89-89453-30-7, 51 - 52. BibTeX
306.	T. Hadámek, S. Selberherr, W. Goes, V. Sverdlov: "Asymmetry of Current-Induced Heating in Magnetic Tunnel Junctions"; Talk: International Workshop on Computational Nanotechnology (IWCN), Daejeon, Korea (Virtual); 2021-05-24 - 2021-06-06; in "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2021), ISBN: 978-89-89453-30-7, 49 - 50. BibTeX
305.	H. Kosina, H. Seiler, V. Sverdlov: "Numerical Calculation of the Transverse Modes in 1T' MoS₂ Nanoribbons"; Talk: International Workshop on Computational Nanotechnology (IWCN), Daejeon, Korea (Virtual); 2021-05-24 - 2021-06-06; in "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2021), ISBN: 978-89-89453-30-7, 2 - 3. BibTeX
304.	V. Sverdlov: "Modeling Spin Transfer Torque Magnetoresistive Memory"; Talk: Silvaco Users Global Event (SURGE), Santa Clara, CA, USA - virtual; (invited) 2020-10-20 in "Proceedings of the Silvaco Users Global Event (SURGE)", (2020), 1. BibTeX
303.	V. Sverdlov, A.-M. El-Sayed, H. Kosina, S. Selberherr: "Ballistic Conductance in a Topological 1T´-MoS₂ Nanoribbon"; Poster: International Symposium on Nanostructures: Physics and Technology (NANO), Minsk, Belarus - virtual; 2020-09-28 - 2020-10-02; in "Proceedings of the International Symposium on Nanostructures: Physics and Technology (NANO)", (2020), ISBN: 978-5-93634-066-6, 200 - 201. BibTeX
302.	J. Ender, M. Mohamedou, S. Fiorentini, R. Orio, S. Selberherr, W. Goes, V. Sverdlov: "Efficient Demagnetizing Field Calculation for Disconnected Complex Geometries in STT-MRAM Cells"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan - virtual; 2020-09-23 - 2020-10-06; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2020), 213 - 216 doi:10.23919/SISPAD49475.2020.9241662. BibTeX
301.	S. Fiorentini, J. Ender, M. Mohamedou, R. Orio, S. Selberherr, W. Goes, V. Sverdlov: "Computation of Torques in Magnetic Tunnel Junctions through Spin and Charge Transport Modeling"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan - virtual; 2020-09-23 - 2020-10-06; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2020), 209 - 212 doi:10.23919/SISPAD49475.2020.9241657. BibTeX
300.	H. Kosina, H. Seiler, V. Sverdlov: "Analytical Formulae for the Surface Green´s Functions of Graphene and 1T´ MoS2 Nanoribbons"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan - virtual; 2020-09-23 - 2020-10-06; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2020), 185 - 188 doi:10.23919/SISPAD49475.2020.9241650. BibTeX
299.	R. Orio, A. Makarov, W. Goes, J. Ender, S. Fiorentini, S. Selberherr, V. Sverdlov: "Switching of a Perpendicularly Magnetized Free-Layer by Spin-Orbit-Torques with Reduced Currents"; Talk: World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI), Orlando, FL, USA - virtual; 2020-09-13 - 2020-09-16; in "Proceedings of the World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI)", (2020), ISBN: 978-1-950492-37-4, 58 - 61. BibTeX
298.	R. Orio, J. Ender, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov: "Reduced Current Spin-Orbit Torque Switching of a Perpendicularly Magnetized Free Layer"; Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France - virtual; 2020-09-01 in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2020), 123 - 124. BibTeX
297.	V. Sverdlov, H. Kosina: "Topologically Protected and Conventional Subbands in a 1T´-MoS₂ Nanoribbon Channel"; Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France - virtual; 2020-09-01 in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2020), 68 - 69. BibTeX
296.	S. Fiorentini, J. Ender, M. Mohamedou, V. Sverdlov, W. Goes, R. Orio, S. Selberherr: "Comprehensive Modeling of Coupled Spin-Charge Transport and Magnetization Dynamics in STT-MRAM Cells"; Talk: SPIE Spintronics, San Diego, CA, USA - virtual; (invited) 2020-08-24 - 2020-08-28; in "Proceedings of SPIE Spintronics", (2020), 11470-44. BibTeX
295.	V. Sverdlov, A.-M. El-Sayed, S. Selberherr: "Subband Structure and Ballistic Conductance of a Molybdenum Disulfide Nanoribbon in Topological 1T´ Phase: A k∙p Study"; Talk: International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES), Lodz, Poland - virtual; 2020-06-25 - 2020-06-27; in "Book of Abstracts of the International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES)", (2020), 58. BibTeX
294.	S. Fiorentini, R. Orio, S. Selberherr, J. Ender, W. Goes, V. Sverdlov: "Influence of Current Redistribution in Switching Models for Perpendicular STT-MRAM"; Talk: Meeting of the Electrochemical Society (ECS), Montreal, Canada - virtual; 2020-05-10 - 2020-05-14; in "Abstracts of the Meeting of the Electrochemical Society (ECS)", (2020), MA2020-01/1389, doi:10.1149/MA2020-01241389mtgabs. BibTeX
293.	S. Fiorentini, J. Ender, S. Selberherr, R. Orio, W. Goes, V. Sverdlov: "Comprehensive Modeling of Coupled Spin and Charge Transport through Magnetic Tunnel Junctions"; Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France - virtual; 2020-03-31 - 2020-04-02; in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2020), 112 - 113. BibTeX
292.	S. Fiorentini, R. Orio, S. Selberherr, J. Ender, W. Goes, V. Sverdlov: "Perpendicular STT-MRAM Switching at Fixed Voltage and at Fixed Current"; Talk: IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Penang, Malaysia - virtual; 2020-03-16 - 2020-03-18; in "Proceedings of the IEEE Electron Devices Technology and Manufacturing Conference (EDTM)", (2020), ISBN: 978-1-7281-2539-8, 341 - 344 doi:10.1109/EDTM47692.2020.9117985. BibTeX
291.	V. Sverdlov, S. Fiorentini, J. Ender, W. Goes, R. Orio, S. Selberherr: "Emerging CMOS Compatible Magnetic Memories and Logic"; Talk: IEEE Latin America Electron Devices Conference (LAEDC), San Jose, Costa Rica; (invited) 2020-02-25 - 2020-02-28; in "Proceedings of the IEEE Latin America Electron Devices Conference (LAEDC)", (2020), ISBN: 978-1-7281-1044-8, doi:10.1109/LAEDC49063.2020.9073332. BibTeX
290.	V. Sverdlov, S. Selberherr: "Spintronic Memories"; Talk: Energy-Materials-Nanotechnology Fall Meeting (EMN), Chengdu, China; (invited) 2019-12-16 - 2019-12-19; in "Abstracts of the Energy-Materials-Nanotechnology Fall Meeting (EMN)", (2019), 19 - 21. BibTeX
289.	R. Orio, A. Makarov, J. Ender, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov: "A Dynamical Approach to Fast and Reliable External Field Free Perpendicular Magnetization Reversal by Spin-Orbit Torques"; Poster: IEEE International Electron Devices Meeting (IEDM), San Francisco, USA; 2019-12-07 - 2019-12-11; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM) Special Poster Session Dedicated to MRAM", (2019), 1 page(s) . BibTeX
288.	S. Fiorentini, R. Orio, S. Selberherr, J. Ender, W. Goes, V. Sverdlov: "Comprehensive Modeling of Switching in Perpendicular STT-MRAM"; Poster: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA; 2019-12-01 - 2019-12-06; in "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2019), ISBN: 978-0-578-61722-0, 107 - 108. BibTeX
287.	R. Orio, S. Selberherr, J. Ender, S. Fiorentini, W. Goes, V. Sverdlov: "Robustness of the Two-Pulse Switching Scheme for SOT-MRAM"; Talk: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA; 2019-12-01 - 2019-12-06; in "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2019), ISBN: 978-0-578-61722-0, 54 - 55. BibTeX
286.	V. Sverdlov, S. Selberherr: "CMOS Technology Compatible Magnetic Memories"; Talk: International Symposium on Next-Generation Electronics (ISNE), Zhengzhou, China; (invited) 2019-10-09 - 2019-10-10; in "Proceedings of the International Symposium on Next Generation Electronics (ISNE)", (2019), ISBN: 978-1-7281-2062-1, doi:10.1109/ISNE.2019.8896421. BibTeX
285.	R. Orio, A. Makarov, S. Selberherr, W. Goes, J. Ender, S. Fiorentini, V. Sverdlov: "Switching Speedup of the Magnetic Free Layer of Advanced SOT-MRAM"; Talk: European Solid-State Device Research Conference (ESSDERC), Krakow, Poland; 2019-09-23 - 2019-09-26; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2019), ISSN: 2378-6558, 146 - 149 doi:10.1109/ESSDERC.2019.8901780. BibTeX
284.	S. Fiorentini, R. Orio, W. Goes, J. Ender, V. Sverdlov: "Comprehensive Comparison of Switching Models for Perpendicular Spin-Transfer Torque MRAM Cells"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy; 2019-09-04 - 2019-09-06; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2019), ISBN: 978-1-7281-0938-1, 57 - 60 doi:10.1109/SISPAD.2019.8870359. BibTeX
283.	V. Sverdlov: "Spin-based Electronics: Recent Developments and Trends"; Talk: International Conference on Modern Problems in the Physics of Surfaces and Nanostructures (ICMPSN), Yaroslavl, Russia; (invited) 2019-08-26 - 2019-08-29; in "Proceedings of the International Conference on Modern Problems in the Physics of Surfaces and Nanostructures (ICMPSN)", (2019), 7. BibTeX
282.	R. Orio, S. Selberherr, V. Sverdlov: "Magnetic Field-Free Deterministic Switching of a Perpendicular Magnetic Layer by Spin-Orbit Torques"; Talk: SPIE Spintronics, San Diego, CA, USA; (invited) 2019-08-11 - 2019-08-15; in "Proceedings of SPIE Spintronics", (2019), 11090-123. BibTeX
281.	V. Sverdlov, S. Selberherr: "Shot Noise in Magnetic Tunnel Junctions"; Talk: World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI), Orlando, FL, USA; 2019-07-06 - 2019-07-09; in "Proceedings of the World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI) Volume II", (2019), ISBN: 978-1-950492-09-1, 19 - 22. BibTeX
280.	V. Sverdlov, S. Selberherr: "Spin-Based CMOS-Compatible Memories"; International Nanoelectronics Conference (INEC), Kuching, Malaysia; (invited) 2019-07-03 - 2019-07-05; in "Proceedings of the International Nanoelectronics Conferences (INEC)", (2019), ISSN: 2159-3531, doi:10.1109/INEC.2019.8853848. BibTeX
279.	V. Sverdlov, S. Selberherr: "A Monte Carlo Evaluation of Current and Low Frequency Current Noise at Spin-Dependent Hopping in Magnetic Tunnel Junctions"; Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 2019-06-10 - 2019-06-14; in "Proceedings of the International Conference on Large-Scale Scientific Computations (LSSC)", (2019), 96. BibTeX
278.	R. Orio, A. Makarov, S. Selberherr, W. Gös, J. Ender, S. Fiorentini, V. Sverdlov: "Robust Magnetic Field Free Switching Scheme for Perpendicular Free Layer in Advanced Spin Orbit Torque Magnetoresistive Random Access Memory"; Talk: International Workshop on Computational Nanotechnology (IWCN), Chicago, IL, USA; 2019-05-20 - 2019-05-24; in "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2019), ISBN: 978-3-9504738-0-3, 69 - 71. BibTeX
277.	V. Sverdlov, S. Selberherr: "Hopping in a Multiple Ferromagnetic Terminal Configuration"; Talk: International Workshop on Computational Nanotechnology (IWCN), Chicago, IL, USA; 2019-05-20 - 2019-05-24; in "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2019), ISBN: 978-3-9504738-0-3, 75 - 77. BibTeX
276.	R. Orio, A. Makarov, W. Goes, J. Ender, S. Fiorentini, V. Sverdlov: "Two-Pulse Magnetic Field Free Switching Scheme for Advanced Perpendicular SOT-MRAM"; Talk: International Symposium on Hysteresis Modeling and Micromagnetics (HMM), Heraklion, Greece; 2019-05-19 - 2019-05-22; in "Book of Abstracts of the International Symposium on Hysteresis Modeling and Micromagnetics (HMM)", (2019), 34. BibTeX
275.	R. Orio, A. Makarov, S. Selberherr, W. Goes, J. Ender, S. Fiorentini, V. Sverdlov: "Efficient Magnetic Field Free Switching of Symmetric Perpendicular Magnetic Free Layer for Advanced SOT-MRAM"; Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Grenoble, France; 2019-04-01 - 2019-04-03; in "Proceedings of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2019), 152 - 153. BibTeX
274.	V. Sverdlov, S. Selberherr: "Combining Perpendicular and Shape Anisotropy for Optimal Switching of Advanced Spin-Orbit Torque Memory Cells"; Talk: IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Singapore; 2019-03-13 - 2019-03-15; in "Proceedings of the IEEE Electron Devices Technology and Manufacturing Conference (EDTM)", (2019), ISBN: 978-1-5386-6508-4, 151 - 153 doi:10.1109/EDTM.2019.8731330. BibTeX
273.	V. Sverdlov, A. Makarov, S. Selberherr: "Fast, Reliable, and Field-free Perpendicular Magnetization Reversal in Advanced Spin-Orbit Torque MRAM by Two-pulse Switching"; Poster: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA; (invited) 2018-11-25 - 2018-11-30; in "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2018), ISBN: 978-3-901578-32-8, 124 - 125. BibTeX
272.	V. Sverdlov, S. Selberherr: "Shot Noise Enhancement at Spin-dependent Hopping"; Talk: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA; (invited) 2018-11-25 - 2018-11-30; in "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2018), ISBN: 978-3-901578-32-8, 6 - 7. BibTeX
271.	V. Sverdlov, S. Selberherr: "A Single-Spin Switch"; Talk: International Electron Devices & Materials Symposium (IEDMS), Keelung, Taiwan; (invited) 2018-11-13 - 2018-11-15; in "Conference Abstract Book", (2018), . BibTeX
270.	V. Sverdlov, A. Makarov, S. Selberherr: "Magnetic Field-Free Fast Reliable Switching by Spin-Orbit Torque in Advanced MRAM"; Poster: Micromagnetics: Analysis, Numerics, Applications (MANA), Vienna; 2018-11-08 - 2018-11-09; in "Proceedings of Micromagnetics: Analysis, Numerics, Applications (MANA) 2018", (2018), 32. BibTeX
269.	V. Sverdlov, S. Selberherr: "Actual Problems in the Field of Spintronics"; Talk: Workshop on Applied Mathematics and Simulation for Semiconductors (AMaSIS), Berlin, Germany; (invited) 2018-10-08 - 2018-10-10; in "Proceedings of the Workshop on Applied Mathematics and Simulation for Semiconductors (AMasIS) 2018", (2018), 40. BibTeX
268.	V. Sverdlov, S. Selberherr: "Electron Spin for Modern and Future Microelectronics"; Talk: International Conference Micro- and Nanoelectronics (ICMNE), Moscow-Zvenigorod, Russia; (invited) 2018-10-01 - 2018-10-05; in "Proceedings of the International Conference Micro- and Nanoelectronics (ICMNE) 2018", (2018), ISBN: 978-5-317-05917-0, 7. BibTeX
267.	A. Makarov, V. Sverdlov, S. Selberherr: "Field-free Fast Reliable Deterministic Switching in Perpendicular Spin-Orbit Torque MRAM Cells"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, Texas, USA; 2018-09-24 - 2018-09-26; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2018), ISBN: 978-1-5386-6788-0, 186 - 189 doi:10.1109/SISPAD.2018.8551716. BibTeX
266.	V. Sverdlov, S. Selberherr: "Spin Correlations at Hopping in Magnetic Structures: From Tunneling Magnetoresistance to Single-Spin Transistor"; Talk: SPIE Spintronics, San Diego, CA, USA; (invited) 2018-08-19 - 2018-08-23; in "Proceedings of SPIE Spintronics", (2018), 10732-112. BibTeX
265.	V. Sverdlov, A. Makarov, S. Selberherr: "Reliable Sub-Nanosecond Switching of a Perpendicular SOT-MRAM Cell Without External Magnetic Field"; Talk: World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI), Orlando, Florida, USA; 2018-07-08 - 2018-07-11; in "Proceedings of the 22^nd World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI)", (2018), ISBN: 978-1-941763-81-0, 30 - 32. BibTeX
264.	A. Makarov, V. Sverdlov, S. Selberherr: "Two-Pulse Sub-ns Switching of a Perpendicular Spin-Orbit Torque MRAM Cell Without External Magnetic Field"; Poster: Advanced Research Workshop on Future Trends in Microelectronics: Vingt Ans Après, Sardinia, Italy; 2018-06-10 - 2018-06-16; in "Abstracts Advanced Research Workshop Future Trends in Microelectronics: Vingt Ans Après", (2018), 51. BibTeX
263.	V. Sverdlov, S. Selberherr: "Spin-Dependent Trap-Assisted Tunneling: A Path Towards a Single Spin Switch"; Poster: Advanced Research Workshop on Future Trends in Microelectronics: Vingt Ans Après, Sardinia, Italy; 2018-06-10 - 2018-06-16; in "Abstracts Advanced Research Workshop Future Trends in Microelectronics: Vingt Ans Après", (2018), 49. BibTeX
262.	A. Makarov, V. Sverdlov, S. Selberherr: "Ultra-Fast Switching of a Free Magnetic Layer with out-of-Plane Magnetization in Spin-Orbit Torque MRAM Cells"; Talk: 233^rd ECS Meeting (ECS), Seattle, Washington, USA; 2018-05-13 - 2018-05-17; in "Proceedings of the 233^rd ECS Meeting (ECS)", (2018), 85/213, ISSN: 2151-2043, . BibTeX
261.	J. Ghosh, D. Osintsev, V. Sverdlov, S. Ganguly: "Multilevel Parallelization Approach to Estimate Spin Lifetime in Silicon: Performance Analysis"; Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Granada, Spain; 2018-03-19 - 2018-03-21; in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2018), ISBN: 978-1-5386-4810-0, 79 - 80. BibTeX
260.	V. Sverdlov, A. Makarov, S. Selberherr: "Switching Current Reduction in Advanced Spin-Orbit Torque MRAM"; Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Granada, Spain; 2018-03-19 - 2018-03-21; in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2018), ISBN: 978-1-5386-4810-0, 57 - 58. BibTeX
259.	V. Sverdlov, S. Selberherr: "Current and Shot Noise at Spin-dependent Hopping in Magnetic Tunnel Junctions"; Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Granada, Spain; 2018-03-19 - 2018-03-21; in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2018), ISBN: 978-1-5386-4810-0, 107 - 108. BibTeX
258.	V. Sverdlov, S. Selberherr: "A Single-Spin Switch"; Talk: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA; (invited) 2017-11-26 - 2017-12-01; in "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2017), ISBN: 978-3-901578-31-1, 93 - 94. BibTeX
257.	V. Sverdlov, J. Weinbub, S. Selberherr: "Current in Magnetic Tunnel Junctions at Spin-Dependent Hopping"; Talk: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA; (invited) 2017-11-26 - 2017-12-01; in "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2017), ISBN: 978-3-901578-31-1, 87 - 88. BibTeX
256.	V. Sverdlov, J. Weinbub, S. Selberherr: "Spin-Based Non-Volatile Memory and Logic in Modern Nanoelectronics"; BIT's Annual World Congress of Nano Science & Technology, Fukuoka; (invited) 2017-10-24 - 2017-10-26; in "Abstracts of the BIT's 7^th Annual World Congress of Nano Science & Technology-2017", (2017), 343. BibTeX
255.	V. Sverdlov, A. Makarov, J. Weinbub, S. Selberherr: "Non-Volatility by Spin in Modern Nanoelectronics"; Talk: International Conference on Microelectronics (MIEL), Nis, Serbia; (invited) 2017-10-09 - 2017-10-11; in "Proceedings of the International Conference on Microelectronics (MIEL)", (2017), ISBN: 978-1-5386-2562-0, 7 - 14 doi:10.1109/MIEL.2017.8190061. BibTeX
254.	V. Sverdlov, J. Weinbub, S. Selberherr: "Spintronics as a Non-Volatile Complement to Nanoelectronics"; Talk: International Conference on Microelectronics, Devices and Materials (MIDEM), Ljubljana, Slovenia; (invited) 2017-10-04 - 2017-10-06; in "Proceedings of the 53^rd International Conference on Microelectronics, Devices and Materials (MIDEM 2017)", (2017), ISBN: 978-961-92933-7-9, 10 page(s) . BibTeX
253.	V. Sverdlov, H. Mahmoudi, T. Windbacher, A. Makarov, J. Weinbub, S. Selberherr: "MTJs - Spin-Based Binary Memristors for Non-Volatile Memory and Logic Applications"; Talk: Energy-Materials-Nanotechnology Meeting on Memristive Switching & Network (EMN), Milan, Italy; (invited) 2017-08-14 - 2017-08-18; in "Abstracts of the Energy-Materials-Nanotechnology Meeting on Memristive Switching & Network (EMN)", (2017), 33 - 34. BibTeX
252.	T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr: "Analysis of a Spin-Transfer Torque Based Copy Operation of a Buffered Magnetic Processing Environment"; Talk: World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI), Orlando, Florida, USA; 2017-07-08 - 2017-07-11; in "Proceedings of the 21^st World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI)", (2017), ISBN: 978-1-941763-59-9, 142 - 146. BibTeX
251.	V. Sverdlov, J. Weinbub, S. Selberherr: "Enhanced Shot Noise as a Signature of Trap-Assisted Tunneling in Magnetic Tunnel Junctions: a Monte Carlo Approach"; Talk: 25^th International Symposium on Nanostructures: Physics and Technology, Sankt Petersburg, Russland; 2017-06-26 - 2017-06-30; in "Proceedings of the 25^th International Symposium on Nanostructures: Physics and Technology", (2017), ISBN: 978-5-7422-5779-0, 132 - 133. BibTeX
250.	V. Sverdlov, J. Weinbub, S. Selberherr: "Electron Spin at Work in Modern and Emerging Devices"; Talk: Energy-Materials-Nanotechnology Meeting on Quantum (EMN), Wien, Austria; (invited) 2017-06-18 - 2017-06-22; in "Abstracts of the Energy-Materials-Nanotechnology Meeting on Quantum (EMN)", (2017), 31 - 33. BibTeX
249.	V. Sverdlov, J. Weinbub, S. Selberherr: "Spin-Dependent Trap-Assisted Tunneling in Magnetic Tunnel Junctions: A Monte Carlo Study"; Talk: International Workshop on Computational Nanotechnology (IWCN), Low Wood Bay, Lake District, UK; 2017-06-05 - 2017-06-09; in "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2017), 88 - 90. BibTeX
248.	V. Sverdlov, S. Selberherr: "Shot noise at spin-dependent hopping in tunnel junctions with ferromagnetic electrodes"; Talk: Emerging Technologies Communication Microsystems Optoelectronics Sensing (ETCMOS), Warsaw, Poland; (invited) 2017-05-28 - 2017-05-30; in "Proceedings of the ETCMOS 2017", (2017), ISBN: 1927500869, 57. BibTeX
247.	S. Selberherr, T. Windbacher, A. Makarov, V. Sverdlov: "Exploiting Spin-Transfer Torque for Non-Volatile Computing"; Talk: World Congress of Smart Materials (WCSM), Bangkok; (invited) 2017-03-16 - 2017-03-18; in "Book of Abstracts of BIT's 3^rd Annual World Congress of Smart Materials-2017", (2017), 130. BibTeX
246.	V. Sverdlov, S. Selberherr: "Shot noise at spin-dependent hopping in tunnel junctions with ferromagnetic electrodes"; Talk: APS March Meeting, New Orleans, USA; 2017-03-13 - 2017-03-17; in "Bulletin of the APS April Meeting 2017", (2017), ISSN: 0003-0503, . BibTeX
245.	V. Sverdlov, J. Weinbub, S. Selberherr: "Modeling Spin-Dependent Phenomena for New Device Applications"; Talk: SIAM Conference on Computational Science and Engineering, Atlanta, GA, USA; (invited) 2017-02-27 - 2017-03-03; in "CSE17 Abstracts", (2017), 45 - 46. BibTeX
244.	V. Sverdlov, J. Ghosh, S. Selberherr: "Universal Dependence of the Spin Lifetime in Silicon Films on the Spin Injection Direction"; Talk: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA; (invited) 2016-12-04 - 2016-12-09; in "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2016), ISBN: 978-3-901578-30-4, 7. BibTeX
243.	T. Windbacher, B.G. Malm, V. Sverdlov, M. Östling, S. Selberherr: "Influence of the Free Layer Alignment on the Reliability of a Non-Volatile Magnetic Shift Register"; Talk: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA; (invited) 2016-12-04 - 2016-12-09; in "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2016), ISBN: 978-3-901578-30-4, 43. BibTeX
242.	T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr: "The Exploitation of Magnetization Orientation Encoded Spin-Transfer Torque for an Ultra Dense Non-Volatile Magnetic Shift Register"; Talk: European Solid-State Device Research Conference (ESSDERC), Lausanne, Switzerland; 2016-09-12 - 2016-09-16; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2016), ISBN: 978-1-5090-2969-3, 311 - 314 doi:10.1109/ESSDERC.2016.7599648. BibTeX
241.	V. Sverdlov, A. Makarov, T. Windbacher, S. Selberherr: "Magnetic Field Dependent Tunneling Magnetoresistance through a Quantum Well between Ferromagnetic Contacts"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nürnberg, Deutschland; 2016-09-06 - 2016-09-08; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2016), ISBN: 978-1-5090-0817-9, 315 - 318 doi:10.1109/SISPAD.2016.7605210. BibTeX
240.	T. Windbacher, H. Mahmoudi, A. Makarov, V. Sverdlov, S. Selberherr: "Logic-in-memory: A Non-Volatile Processing Environment for the Post CMOS Age"; Talk: SISPAD Workshop, Nürnberg, Germany; 2016-09-05 in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2016), . BibTeX
239.	T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr: "Layer Coupling and Read Disturbances in a Buffered Magnetic Logic Environment"; Talk: SPIE Spintronics, San Diego, CA, USA; (invited) 2016-08-28 - 2016-09-01; in "Proceedings of SPIE Spintronics", (2016), 9931-93. BibTeX
238.	A. Makarov, V. Sverdlov, T. Windbacher, S. Selberherr: "Silicon Spintronics"; Talk: International Conference on Electronic Materials (ICEM), Singapur; (invited) 2016-07-04 - 2016-07-08; in "Proceedings of the ICEM 2016", (2016), 1 page(s) . BibTeX
237.	T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr: "Novel Magnetic Devices for Memory and Non-Volatile Computing Applications"; Talk: Emerging Technologies Communication Microsystems Optoelectronics Sensing (ETCMOS), Montreal, QC, Canada; 2016-05-25 - 2016-05-27; in "2016 Conference Program of the Emerging Technologies Communication Microsystems Optoelectronics Sensing (ETCMOS)", (2016), 14 page(s) . BibTeX
236.	T. Windbacher, V. Sverdlov, S. Selberherr: "Magnetic Nonvolatile Processing Environment"; Talk: I International Scientific and Practical Conference Innovation in the Software Systems of Trains, Samara, Russia; (invited) 2016-05-19 - 2016-05-20; in "Program and Abstracts of the I International Scientific and Practical Conference Innovation in the Software Systems of Trains", (2016), 42 - 43. BibTeX
235.	V. Sverdlov, J. Ghosh, A. Makarov, T. Windbacher, S. Selberherr: "Nanoelectronics with Spin"; Talk: World Congress and Expo on Nanotechnology and Materials Science, Dubai, United Arab Emirates; (invited) 2016-04-04 - 2016-04-06; in "Book of Abstracts of the World Congress and Expo on Nanotechnology and Materials Science", (2016), 19 - 20. BibTeX
234.	V. Sverdlov, T. Windbacher, A. Makarov, S. Selberherr: "Silicon Spintronics"; Talk: Energy-Materials-Nanotechnology Meeting on Magnetic Materials (EMN), Kona, USA; (invited) 2016-03-21 - 2016-03-24; in "Abstracts of the Energy-Materials-Nanotechnology Meeting on Magnetic Materials (EMN)", (2016), 37 - 38. BibTeX
233.	V. Sverdlov, S. Selberherr: "Effects of Spin Relaxation on Trap-Assisted Tunneling Through Ferromagnetic Metal-Oxide-Semiconductor Structures"; Talk: APS March Meeting, Baltimore, USA; 2016-03-14 - 2016-03-18; in "Bulletin of the American Physical Society (APS March Meeting)", (2016), 61/1, ISSN: 0003-0503, 1 page(s) . BibTeX
232.	V. Sverdlov, S. Selberherr: "Spin-dependent Resonant Tunneling in Ferromagnet-Oxide-Silicon Structures"; Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Vienna, Austria; 2016-01-25 - 2016-01-27; in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2016), ISBN: 978-3-901578-29-8, 116 - 117. BibTeX
231.	A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr: "SOT-MRAM based on 1Transistor-1MTJ-Cell Structure"; IEEE, in "Proceedings of the Non-Volatile Memory Technology Symposium (NVMTS)", (2015), 50 - 53 doi:10.1109/NVMTS.2015.7457479. BibTeX
230.	A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr: "A Novel Method of SOT-MRAM Switching"; Talk: International Symposium on Advanced Nanostructures and Nano-Devices (ISANN), Waikaloa, Hawaii, USA; 2015-11-29 - 2015-12-04; in "Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN)", (2015), . BibTeX
229.	V. Sverdlov, S. Selberherr: "Spin-dependent Trap-assisted Tunneling in Ferromagnet-Oxide-Semiconductor Structures"; Talk: International Symposium on Advanced Nanostructures and Nano-Devices (ISANN), Waikaloa, Hawaii, USA; 2015-11-29 - 2015-12-04; in "Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN)", (2015), . BibTeX
228.	T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr: "Novel Spintronic Devices for Embedded Spin-Based Memories and Non-Volatile Computing"; Talk: Energy-Materials-Nanotechnology Fall Meeting (EMN), Las Vegas, USA; (invited) 2015-11-16 - 2015-11-19; in "Abstracts of the Energy-Materials-Nanotechnology Fall Meeting (EMN)", (2015), 15 - 16. BibTeX
227.	A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr: "SOT-MRAM based on 1Transistor-1MTJ-Cell Structure"; Poster: Non-Volatile Memory Technology Symposium (NVMTS), Beijing, China; 2015-10-12 - 2015-10-14; in "Technical Digest of the Non-Volatile Memory Technology Symposium (NVMTS)", (2015), 105 - 106. BibTeX
226.	A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr: "Concept of a SOT-MRAM based on 1Transistor-1MTJ-Cell Structure"; Poster: International Conference on Solid State Devices and Materials (SSDM), Sapporo, Japan; 2015-09-27 - 2015-09-30; in "Extended Abstracts of the International Conference on Solid State Devices and Materials (SSDM)", (2015), ISBN: 978-4-86348-514-3, 140 - 141. BibTeX
225.	V. Sverdlov, J. Ghosh, A. Makarov, T. Windbacher, S. Selberherr: "Spin-Driven Applications of Silicon and CMOS-Compatible Devices"; Talk: BIT's Annual World Congress of Nano Science & Technology, Xi'an, China; (invited) 2015-09-24 - 2015-09-26; in "Abstracts of the BIT's 5^th Annual Congress of Nano Science & Technology-2015", (2015), 175. BibTeX
224.	J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr: "Increase of Surface Roughness and Phonon Scattering Mediated Spin Lifetime in Thin Strained SOI Film"; Talk: European Materials Research Society (EMRS), Warsaw, Poland; 2015-09-15 - 2015-09-18; in "Book of Abstracts of the 2015 E-MRS Fall Meeting", (2015), 1 page(s) . BibTeX
223.	J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr: "Injection Direction Sensitive Spin Lifetime Model in a Strained Thin Silicon Film"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 2015-09-09 - 2015-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7858-1, 277 - 280 doi:10.1109/SISPAD.2015.7292313. BibTeX
222.	T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr: "Improving the Performance of a Non-Volatile Magnetic Flip Flop by Exploiting the Spin Hall Effect"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 2015-09-09 - 2015-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7858-1, 446 - 449 doi:10.1109/SISPAD.2015.7292357. BibTeX
221.	J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr: "Spin Lifetime Dependence on Valley Splitting in Thin Silicon Films"; Talk: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 2015-09-02 - 2015-09-04; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2015), ISBN: 978-0-692-50554-0, 35 - 36. BibTeX
220.	J. Ghosh, V. Sverdlov, S. Selberherr: "Influence of Valley Splitting on Spin Relaxation Time in a Strained Thin Silicon Film"; Talk: International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, USA; 2015-09-02 - 2015-09-04; in "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2015), ISBN: 978-0-692-51523-5, 4 page(s) doi:10.1109/IWCE.2015.7301961. BibTeX
219.	V. Sverdlov, J. Ghosh, A. Makarov, T. Windbacher, S. Selberherr: "CMOS-Compatible Spintronic Devices"; Talk: International Symposium on Microelectronics Technology and Devices (SBMicro), Salvador, Brazil; (invited) 2015-09-01 - 2015-09-04; in "Proceedings of the 30th Symposium on Microelectronics Technology and Devices (SBMicro)", (2015), ISBN: 978-1-4673-7162-9, 4 page(s) doi:10.1109/SBMicro.2015.7298103. BibTeX
218.	J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr: "Evaluation of Spin Lifetime in Thin Silicon Films by Multilevel Parallelization"; Poster: nanoHUB User Conference, West Lafayette, Indiana, USA; 2015-08-31 - 2015-09-01; in "Proceedings of the nanoHUB User Conference", (2015), 1. BibTeX
217.	J. Ghosh, V. Sverdlov, S. Selberherr: "Increment of Spin Lifetime by Spin Injection Orientation in Stressed Thin SOI Films"; Poster: International Conference on Spintronics and Quantum Information Technology (SPINTECH), Basel, Switzerland; 2015-08-10 - 2015-08-13; in "Program and Abstract Book of the 8th International School & Conference on Spintronics and Quantum Information Technology", (2015), 130. BibTeX
216.	V. Sverdlov, S. Selberherr: "Spin-dependent Trap-assisted Tunneling Including Spin Relaxation at Room Temperature"; Poster: International Conference on Spintronics and Quantum Information Technology (SPINTECH), Basel, Switzerland; 2015-08-10 - 2015-08-13; in "Program and Abstract Book of the 8th International School & Conference on Spintronics and Quantum Information Technology", (2015), 114. BibTeX
215.	J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr: "Intersubband Spin Relaxation Reduction and Spin Lifetime Enhancement by Strain in SOI Structures"; Talk: International Conference on Insulating Films on Semiconductors (INFOS), Udine, Italy; 2015-06-29 - 2015-07-02; in "Book of Abstracts 19th Conference on Insulating Films on Semiconductors", (2015), ISBN: 978-88-9030-695-2, 235 - 236. BibTeX
214.	V. Sverdlov, J. Ghosh, A. Makarov, T. Windbacher, S. Selberherr: "Silicon Spintronics: Recent Advances and Challenges"; International Conference and School for Young Scientists Information Technology and Nanotechnology (ITNT), Samara, Russia; (invited) 2015-06-29 - 2015-06-30; in "Proceedings of the 2015 International Conference and School for Young Scientists Information Technology and Nanotechnology (ITNT)", (2015), ISBN: 978-5-93424-739-4, 6 - 7. BibTeX
213.	V. Sverdlov, D. Osintsev, J. Ghosh, S. Selberherr: "Strained Silicon-on-Insulator for Spintronic Applications: Giant Spin Lifetime Enhancement"; Poster: Advanced Research Workshop on Future Trends in Microelectronics: Journey into the Unknown, Mallorca, Spain; 2015-06-21 - 2015-06-26; in "Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Journey into the Unknown", (2015), 63. BibTeX
212.	T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr: "A Universal Nonvolatile Processing Environment"; Poster: Advanced Research Workshop on Future Trends in Microelectronics: Journey into the Unknown, Mallorca, Spain; 2015-06-21 - 2015-06-26; in "Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Journey into the Unknown", (2015), 62. BibTeX
211.	D. Osintsev, J. Ghosh, V. Sverdlov, J. Weinbub, S. Selberherr: "Spin Lifetime in MOSFETs: A High Performance Computing Approach"; Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 2015-06-08 - 2015-06-12; in "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2015), 60 - 61. BibTeX
210.	V. Sverdlov, S. Selberherr: "Spin-Based CMOS-Compatible Devices"; Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; (invited) 2015-06-08 - 2015-06-12; in "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2015), 69. BibTeX
209.	J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr: "Variation of Spin Lifetime with Spin Injection Orientation in Strained Thin Silicon Films"; Talk: Meeting of the Electrochemical Society (ECS), Chicago, Illinois, USA; 2015-05-24 - 2015-05-28; in "Proceedings of the 227th ECS Meeting (ECS)", (2015), 67, ISSN: 1938-6737, 2 page(s) . BibTeX
208.	V. Sverdlov, S. Selberherr: "Spin-Based Silicon and CMOS-Compatible Devices"; Talk: Meeting of the Electrochemical Society (ECS), Chicago, Illinois, USA; (invited) 2015-05-24 - 2015-05-28; in "Proceedings of the 227th ECS Meeting (ECS)", (2015), 67, ISSN: 1938-6737, 2 page(s) . BibTeX
207.	T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr: "Novel Buffered Magnetic Logic Gate Grid"; Poster: Meeting of the Electrochemical Society (ECS), Chicago, Illinois, USA; 2015-05-24 - 2015-05-28; in "Proceedings of the 227th ECS Meeting (ECS)", (2015), 67, ISSN: 1938-6737, 2 page(s) . BibTeX
206.	V. Sverdlov, J. Ghosh, D. Osintsev, S. Selberherr: "Electron Spin Lifetime Enhancement by Shear Strain in Thin Silicon Films"; Talk: CMOS Emerging Technologies Research (CMOSETR), Vancouver, BC, Canada; (invited) 2015-05-20 - 2015-05-22; in "Book of Abstracts of the 2015 CMOS Emerging Technologies Research Symposium (CMOSETR)", (2015), ISBN: 978-1-927500-70-5, 58. BibTeX
205.	V. Sverdlov, S. Selberherr: "Spin-Based Devices for Future Microelectronics"; Talk: International Symposium on Next-Generation Electronics (ISNE), Taipei, Taiwan; (invited) 2015-05-04 - 2015-05-06; in "Proceedings of The 4th International Symposium on Next-Generation Electronics (ISNE 2015)", (2015), 4 page(s) doi:10.1109/ISNE.2015.7132030. BibTeX
204.	V. Sverdlov, J. Ghosh, A. Makarov, T. Windbacher, S. Selberherr: "Silicon Spintronics"; NATO Advanced Research Workshop "Functional Nanomaterials and Devices for Electronics, Sensors, Energy Harvesting", Lviv, Ukrain; (invited) 2015-04-13 - 2015-04-16; in "Conference Abstracts, NATO Advanced Research Workshop "Functional Nanomaterials and Devices for Electronics, Sensors, Energy Harvesting"", (2015), ISBN: 978-966-02-7553-9, 44 - 45. BibTeX
203.	V. Sverdlov, J. Ghosh, A. Makarov, T. Windbacher, S. Selberherr: "Silicon and CMOS-Compatible Spintronics"; Talk: International Conference on Applied Physics, Simulation and Computers (APSAC), Vienna, Austria; (invited) 2015-03-15 - 2015-03-17; in "Proceedings of the International Conference on Applied Physics, Simulation and Computers (APSAC 2015)", (2015), 28, ISBN: 978-1-61804-286-6, 17 - 20. BibTeX
202.	J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr: "Spin Lifetime Dependence on Spin Injection Orientation in Strained Silicon Films"; Talk: APS March Meeting, San Antonio, USA; 2015-03-02 - 2015-03-06; in "Bulletin of the American Physical Society (APS March Meeting)", (2015), 60/1, . BibTeX
201.	A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr: "Efficient High-Frequency Spin-Torque Oscillators Composed of Two Three-Layer MgO-MTJs with a Common Free Layer"; Talk: Iberchip Workshop (IWS), Montevideo, Uruguay; (invited) 2015-02-24 - 2015-02-27; in "Proceedings of 21st Iberchip Worshop", (2015), 23, . BibTeX
200.	J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr: "Dependence of Spin Lifetime on Spin Injection Orientation in Strained Silicon Films"; Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Bologna, Italy; 2015-01-26 - 2015-01-28; in "Proceedings of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2015), ISBN: 978-1-4799-6910-4, 285 - 288 doi:10.1109/ULIS.2015.7063829. BibTeX
199.	A. Makarov, V. Sverdlov, S. Selberherr: "Composite Magnetic Tunnel Junctions for Fast Memory Devices and Efficient Spin-Torque Nano-Oscillators"; G. Lee (ed); WITPRESS, 1, in "Future Information Engineering", (2014), ISBN: 978-1-84564-855-8, 391 - 398 doi:10.2495/ICIE130451. BibTeX
198.	A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr: "New Design of Spin-Torque Nano-Oscillators"; Talk: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona; (invited) 2014-11-30 - 2014-12-05; in "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2014), ISBN: 978-3-901578-28-1, 63. BibTeX
197.	T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr: "Pushing a Non-Volatile Magnetic Device Structure Towards a Universal CMOS Logic Replacement"; Talk: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona; (invited) 2014-11-30 - 2014-12-05; in "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2014), ISBN: 978-3-901578-28-1, 62. BibTeX
196.	V. Sverdlov, J. Ghosh, D. Osintsev, S. Selberherr: "Modeling Silicon Spintronics"; Talk: International Conference on Mathematical Models and Methods in Applied Sciences (MMMAS), Saint-Petersburg, Russia; (invited) 2014-09-23 - 2014-09-25; in "Abstracts 2014", (2014), 78. BibTeX
195.	V. Sverdlov, D. Osintsev, S. Selberherr: "Spin Behaviour in Strained Silicon Films"; Talk: European Material Research Society (E-MRS) Fall Meeting, Warsaw, Poland; (invited) 2014-09-15 - 2014-09-18; in "Abstracts of E-MRS Fall Meeting", (2014), 1 page(s) . BibTeX
194.	D. Osintsev, V. Sverdlov, T. Windbacher, S. Selberherr: "Increasing Mobility and Spin Lifetime with Shear Strain in Thin Silicon Films"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 2014-09-09 - 2014-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 193 - 196 doi:10.1109/SISPAD.2014.6931596. BibTeX
193.	T. Windbacher, H. Mahmoudi, V. Sverdlov, S. Selberherr: "Influence of Device Geometry on the Non-Volatile Magnetic Flip Flop Characteristics"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 2014-09-09 - 2014-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 297 - 300 doi:10.1109/SISPAD.2014.6931622. BibTeX
192.	D. Osintsev, V. Sverdlov, S. Selberherr: "Valley Degeneracy and Spin Lifetime Enhancement in Stressed Silicon Films"; Poster: 8th International Conference on Physics and Applications of Spin Phenomena in Solids (PASPS VIII), Washington, D.C., USA; 2014-07-28 - 2014-07-31; in "Book of Abstracts", (2014), 1. BibTeX
191.	J. Ghosh, V. Sverdlov, S. Selberherr: "Spin Diffusion in Silicon from a Ferromagnetic Contact"; Talk: 10th European Conference on Magnetic Sensors and Actuators (EMSA 2014), Vienna, Austria; 2014-07-06 - 2014-07-09; in "Book of Abstracts", (2014), ISBN: 978-3-85465-021-8, 165. BibTeX
190.	A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr: "Micromagnetic Modeling of a Bias-Field-Free Spin-Torque Oscillator Based on Two MgO-MTJs with a Shared Free Layer"; Talk: 10th European Conference on Magnetic Sensors and Actuators (EMSA 2014), Vienna, Austria; 2014-07-06 - 2014-07-09; in "Book of Abstracts", (2014), ISBN: 978-3-85465-021-8, 166. BibTeX
189.	V. Sverdlov, A. Makarov, S. Selberherr: "Structural Optimization of MTJs for STT-MRAM and Oscillator Applications"; Talk: Symposium on CMOS Emerging Technologies, Grenoble, France; 2014-07-06 - 2014-07-08; in "Abstracts: 2014 CMOS Emerging Technologies Research Symposium", (2014), ISBN: 978-1-927500-45-3, 19. BibTeX
188.	H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr: "Compact Modeling of Memristive IMP Gates for Reliable Stateful Logic Design"; Talk: International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES), Lublin, Poland; 2014-06-19 - 2014-06-21; in "Proceedings of the 21st International Conference on Mixed Design of Integrated Circuits and Systems", (2014), 26. BibTeX
187.	V. Sverdlov, H. Mahmoudi, A. Makarov, T. Windbacher, S. Selberherr: "Magnetic Tunnel Junctions for Future Memory and Logic-in-Memory Applications"; Talk: International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES), Lublin, Poland; (invited) 2014-06-19 - 2014-06-21; in "Proceedings of the 21st International Conference on Mixed Design of Integrated Circuits and Systems", (2014), 17. BibTeX
186.	V. Sverdlov, D. Osintsev, S. Selberherr: "Electron Momentum and Spin Relaxation in Silicon Films: A Rigorous k p-based Approach"; Talk: European Conference on Mathematics for Industry (ECMI), Taormina, Italy; (invited) 2014-06-09 - 2014-06-14; in "Abstracts of The 18th European Conference on Mathematics for Industry", (2014), 454 - 456. BibTeX
185.	J. Ghosh, V. Sverdlov, S. Selberherr: "Spin Injection in Silicon: The Role of Screening Effects"; Talk: International Workshop on Computational Electronics (IWCE), Paris, France; 2014-06-03 - 2014-06-06; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6, 63 - 64. BibTeX
184.	D. Osintsev, V. Sverdlov, N. Neophytou, S. Selberherr: "Valley Splitting and Spin Lifetime Enhancement in Ultra-Scaled MOSFETs"; Talk: International Workshop on Computational Electronics (IWCE), Paris, France; 2014-06-03 - 2014-06-06; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6, 59 - 60. BibTeX
183.	T. Windbacher, D. Osintsev, A. Makarov, H. Mahmoudi, V. Sverdlov, S. Selberherr: "Frequency Dependence Study of a Bias Field-Free Nano-Scale Oscillator"; Poster: International Workshop on Computational Electronics (IWCE), Paris, France; 2014-06-03 - 2014-06-06; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2014), ISBN: 978-2-9547858-0-6, 193 - 194. BibTeX
182.	V. Sverdlov, J. Ghosh, H. Mahmoudi, A. Makarov, D. Osintsev, T. Windbacher, S. Selberherr: "Modeling Spin-Based Electronic Devices"; International Conference on Microelectronics (MIEL), Belgrade, Serbia; (invited) 2014-05-12 - 2014-05-14; in "Proceedings of the International Conference on Microelectronics (MIEL)", (2014), ISBN: 978-1-4799-5295-3, 27 - 34 doi:10.1109/MIEL.2014.6842081. BibTeX
181.	H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr: "High Performance MRAM-Based Stateful Logic"; Poster: International Conference on Ultimate Integration of Silicon (ULIS), Stockholm, Sweden; 2014-04-07 - 2014-04-09; in "Proc.Intl.Conf.on Ultimate Integration on Silicon (ULIS)", (2014), ISBN: 978-1-4799-3718-9, 117 - 120 doi:10.1109/ULIS.2014.6813912. BibTeX
180.	V. Sverdlov, J. Ghosh, H. Mahmoudi, A. Makarov, D. Osintsev, T. Windbacher, S. Selberherr: "Modeling of Spin-Based Silicon Technology"; Talk: International Conference on Ultimate Integration of Silicon (ULIS), Stockholm, Sweden; (invited) 2014-04-07 - 2014-04-09; in "Proc.Intl.Conf.on Ultimate Integration on Silicon (ULIS)", (2014), ISBN: 978-1-4799-3718-9, 1 - 4 doi:10.1109/ULIS.2014.6813891. BibTeX
179.	T. Windbacher, H. Mahmoudi, V. Sverdlov, S. Selberherr: "Influence of Magnetization Variations in the Free Layer on a Non-Volatile Magnetic Flip Flop"; Talk: International Conference on Ultimate Integration of Silicon (ULIS), Stockholm, Sweden; 2014-04-07 - 2014-04-09; in "Proc.Intl.Conf.on Ultimate Integration on Silicon (ULIS)", (2014), ISBN: 978-1-4799-3718-9, 9 - 12 doi:10.1109/ULIS.2014.6813893. BibTeX
178.	A. Makarov, D. Osintsev, V. Sverdlov, S. Selberherr: "Modeling Spin-Based Electronic Devices"; Talk: Nano and Giga Challenges in Microelectronics (NGCM), Phoenix, USA; (invited) 2014-03-10 - 2014-03-14; in "Book of Abstracts", (2014), 1 page(s) . BibTeX
177.	D. Osintsev, V. Sverdlov, S. Selberherr: "Mobility and Spin Lifetime Enhancement in Thin Silicon Films by Shear Strain"; Talk: APS March Meeting, Denver, USA; 2014-03-03 - 2014-03-07; in "Bulletin of the American Physical Society (APS March Meeting)", (2014), 59/1, 1 page(s) . BibTeX
176.	D. Osintsev, V. Sverdlov, N. Neophytou, S. Selberherr: "Valley Splitting and Spin Lifetime Enhancement in Strained Silicon Heterostructures"; Poster: International Winterschool on New Developments in Solid State Physics, Mauterndorf, Austria; 2014-02-23 - 2014-02-28; in "Proceedings of International Winterschool on New Developments in Solid State Physics", (2014), 88 - 89. BibTeX
175.	D. Osintsev, V. Sverdlov, S. Selberherr: "Increasing Mobility and Spin Lifetime with Shear Strain in Thin Silicon Films"; Talk: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Tarragona, Spain; 2014-01-27 - 2014-01-29; in "Conference Proceedings of the Tenth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits", (2014), 1 - 2. BibTeX
174.	A. Makarov, V. Sverdlov, S. Selberherr: "Fast Switching STT-MRAM Cells for Future Universal Memory"; Talk: Advanced Workshop on Frontiers in Electronics (WOFE), San Juan, Puerto Rico; (invited) 2013-12-17 - 2013-12-20; in "Abstracts Advanced Workshop on Frontiers in Electronics (WOFE)", (2013), 1 page(s) . BibTeX
173.	J. Ghosh, V. Sverdlov, S. Selberherr: "Influence of a Space Charge Region on Spin Transport in Semiconductor"; Talk: International Semiconductor Device Research Symposium (ISDRS), Maryland, USA; 2013-12-11 - 2013-12-13; in "Abstracts International Semiconductor Device Research Symposium (ISDRS)", (2013), ISBN: 978-1-63173-156-3, 27. BibTeX
172.	A. Makarov, V. Sverdlov, S. Selberherr: "Bias-Field-Free Spin-Torque Oscillator Based on Two MgO-MTJs with a Shared Free Layer: Micromagnetic Modeling"; Poster: International Symposium on Advanced Nanostructures and Nano-Devices (ISANN), Kauai, Hawaii, USA; 2013-12-08 - 2013-12-13; in "Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN)", (2013), 2 page(s) . BibTeX
171.	D. Osintsev, V. Sverdlov, S. Selberherr: "Spin Lifetime Enhancement in Strained Thin Silicon Films"; Talk: International Symposium on Advanced Nanostructures and Nano-Devices (ISANN), Kauai, Hawaii, USA; 2013-12-08 - 2013-12-13; in "Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN)", (2013), 2 page(s) . BibTeX
170.	J. Ghosh, T. Windbacher, V. Sverdlov, S. Selberherr: "Spin Injection and Diffusion in Silicon Based Devices from a Space Charge Layer"; Talk: Annual Conference on Magnetism and Magnetic Materials, Denver, USA; 2013-11-04 - 2013-11-08; in "Abstract Book of 58th Annual Conference of Magnetism and Magnetic Materials (MMM)", (2013), 713 - 714. BibTeX
169.	T. Windbacher, A. Makarov, H. Mahmoudi, V. Sverdlov, S. Selberherr: "Novel Bias-Field-Free Large Gain Spin-Transfer Oscillator"; Talk: Annual Conference on Magnetism and Magnetic Materials, Denver, USA; 2013-11-04 - 2013-11-08; in "Abstract Book of 58th Annual Conference of Magnetism and Magnetic Materials (MMM)", (2013), 456 - 457. BibTeX
168.	A. Makarov, V. Sverdlov, S. Selberherr: "Composite Magnetic Tunnel Junctions for Fast Memory Devices and Efficient Spin-Torque Nano-Oscillators"; Talk: Intl.Conf.on Information Engineering (ICIE), Hong Kong; 2013-11-01 - 2013-11-02; in "Abstracts Intl.Conf.on Information Engineering (ICIE)", (2013), 7. BibTeX
167.	A. Makarov, V. Sverdlov, S. Selberherr: "Concept of a Bias-Field-Free Spin-Torque Oscillator Based on Two MgO-MTJs"; Talk: Solid State Devices and Materials Conference (SSDM), Fukuoka, Japan; 2013-09-24 - 2013-09-27; in "Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials (SSDM 2013)", (2013), ISBN: 978-4-86348-362-0, 796 - 797. BibTeX
166.	D. Osintsev, V. Sverdlov, S. Selberherr: "Reduction of Momentum and Spin Relaxation Rate in Strained Thin Silicon Films"; Talk: European Solid-State Device Research Conference (ESSDERC), Bucharest, Romania; 2013-09-16 - 2013-09-20; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2013), ISBN: 978-1-4799-0649-9, 334 - 337 doi:10.1109/ESSDERC.2013.6818886. BibTeX
165.	H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr: "Performance Analysis and Comparison of Two 1T/1MTJ-based Logic Gates"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 2013-09-03 - 2013-09-05; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 163 - 166 doi:10.1109/SISPAD.2013.6650600. BibTeX
164.	D. Osintsev, V. Sverdlov, S. Selberherr: "Evaluation of Spin Lifetime in Strained UT2B Silicon-On-Insulator MOSFETs"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 2013-09-03 - 2013-09-05; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 236 - 239 doi:10.1109/SISPAD.2013.6650618. BibTeX
163.	T. Windbacher, H. Mahmoudi, V. Sverdlov, S. Selberherr: "Rigorous Simulation Study of a Novel Non-Volatile Magnetic Flip-Flop"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 2013-09-03 - 2013-09-05; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), ISBN: 978-1-4673-5733-3, 368 - 371 doi:10.1109/SISPAD.2013.6650651. BibTeX
162.	H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr: "STT-MRAM-Based Reprogrammable Logic Gates for Large-Scale Non-Volatile Logic Integration"; Poster: International Conference on Nanoscale Magnetism (ICNM), Istanbul, Turkey; 2013-09-02 - 2013-09-06; in "Proceedings of the International Conference on Nanoscale Magnetism", (2013), 208. BibTeX
161.	A. Makarov, V. Sverdlov, S. Selberherr: "Geometry Optimization of Spin-Torque Oscillators Composed of Two MgO-MTJs with a Shared Free Layer"; Talk: International Conference on Nanoscale Magnetism (ICNM), Istanbul, Turkey; 2013-09-02 - 2013-09-06; in "Proceedings of the International Conference on Nanoscale Magnetism", (2013), 69. BibTeX
160.	A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr: "Simulation of Magnetic Oscillations in a System of two MTJs with a Shared Free Layer"; Poster: Soft Magnetic Materials Conference (SMM), Budapest, Hungary; 2013-09-01 - 2013-09-04; in "Abstracts Book of The 21st International Conference on Soft Magnetic Materials", (2013), 101. BibTeX
159.	A. Makarov, V. Sverdlov, S. Selberherr: "Structural Optimization of MTJs with a Composite Free Layer"; Talk: SPIE Spintronics, San Diego, CA, USA; (invited) 2013-08-25 - 2013-08-29; in "Proceedings of SPIE Spintronics", (2013), OP108-86. BibTeX
158.	T. Windbacher, H. Mahmoudi, V. Sverdlov, S. Selberherr: "Novel Non-Volatile Magnetic Flip Flop"; Poster: International Conference on Spintronics and Quantum Information Technology (SPINTECH), Chicago Illinois USA; 2013-07-29 - 2013-08-02; in "In Proceedings of Seventh International School on Spintronics and Quantum Information Technology", (2013), 1 page(s) . BibTeX
157.	H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr: "STT-MTJ-Based Implication Logic Circuits for Non-Volatile Logic-in-Memory Applications"; Talk: Symposium on CMOS Emerging Technologies, Whistler, BC, Canada; (invited) 2013-07-17 - 2013-07-19; in "Book of Abstracts of the 2013 Symposium on CMOS Emerging Technologies (CMOS ET 2013)", (2013), ISBN: 978-1-927500-38-5, 1 page(s) . BibTeX
156.	H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr: "MRAM-based Logic Array for Large-Scale Non-Volatile Logic-in-Memory Applications"; Talk: 2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), New York City, USA; 2013-07-15 - 2013-07-17; in "Proceedings of the 2013 IEEE/ACM International Symposium on Nanoscale Architectures", (2013), ISBN: 978-1-4799-0873-8, 2 page(s) doi:10.1109/NanoArch.2013.6623033. BibTeX
155.	A. Makarov, V. Sverdlov, S. Selberherr: "Transverse Domain Wall Formation in a Free Layer: A Mechanism for Switching Failure in a MTJ-based STT-MRAM"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou, China; 2013-07-15 - 2013-07-19; in "Proceedings of the 20th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2013), ISBN: 978-1-4799-0478-5, 267 - 270 doi:10.1109/IPFA.2013.6599165. BibTeX
154.	D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr: "Using Strain to Increase the Reliability of Scaled Spin MOSFETs"; Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou, China; 2013-07-15 - 2013-07-19; in "Proceedings of the 20th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2013), ISBN: 978-1-4799-0478-5, 770 - 773 doi:10.1109/IPFA.2013.6599272. BibTeX
153.	T. Windbacher, H. Mahmoudi, V. Sverdlov, S. Selberherr: "Novel MTJ-Based Shift Register for Non-Volatile Logic Applications"; Talk: 2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), New York City, USA; 2013-07-15 - 2013-07-17; in "Proceedings of the 2013 IEEE/ACM International Symposium on Nanoscale Architectures", (2013), 36 - 37 doi:10.1109/NanoArch.2013.6623038. BibTeX
152.	H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr: "Design and Applications of Magnetic Tunnel Junction Based Logic Circuits"; Talk: The 9th Conference on Ph.D. Research in Microelectronics & Electronics- PRIME 2013, Villach, Austria; 2013-06-24 - 2013-06-27; in "Proceedings of the 9th Conference on Ph.D. Research in Microelectronics & Electronics", (2013), ISBN: 978-1-4673-4580-4, 157 - 160 doi:10.1109/PRIME.2013.6603122. BibTeX
151.	A. Makarov, V. Sverdlov, S. Selberherr: "Magnetic oscillation of the transverse domain wall in a penta-layer MgO-MTJ"; Poster: International Symposium on Nanostructures, St. Petersburg, Russian federation; 2013-06-24 - 2013-06-28; in "Proceedings of the 21st International Symposium Nanostructures", (2013), ISBN: 978-5-4386-0145-6, 338 - 339. BibTeX
150.	D. Osintsev, V. Sverdlov, S. Selberherr: "Calculation of the Electron Mobility and Spin Lifetime Enhancement by Strain in Thin Silicon Films"; Poster: International Symposium on Nanostructures, St. Petersburg, Russian federation; 2013-06-24 - 2013-06-28; in "Proceedings of the 21st International Symposium Nanostructures", (2013), ISBN: 978-5-4386-0145-6, 69 - 70. BibTeX
149.	H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr: "Optimization of Spin-Transfer Torque Magnetic Tunnel Junction-Based Logic Gates"; Poster: International Workshop on Computational Electronics (IWCE), Nara, Japan; 2013-06-04 - 2013-06-07; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7, 244 - 245. BibTeX
148.	A. Makarov, V. Sverdlov, S. Selberherr: "Structural Optimization of MTJs with a Composite Free Layer"; Talk: International Workshop on Computational Electronics (IWCE), Nara, Japan; 2013-06-04 - 2013-06-07; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7, 74 - 75. BibTeX
147.	D. Osintsev, V. Sverdlov, S. Selberherr: "Influence of Surface Roughness Scattering on Spin Lifetime in Silicon"; Talk: International Workshop on Computational Electronics (IWCE), Nara, Japan; 2013-06-04 - 2013-06-07; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7, 76 - 77. BibTeX
146.	V. Sverdlov, H. Mahmoudi, A. Makarov, D. Osintsev, J. Weinbub, T. Windbacher, S. Selberherr: "Modeling Spin-Based Devices in Silicon"; Talk: International Workshop on Computational Electronics (IWCE), Nara, Japan; (invited) 2013-06-04 - 2013-06-07; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7, 70 - 71. BibTeX
145.	T. Windbacher, O. Triebl, D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr: "Switching Optimization of an Electrically Read- and Writable Magnetic Logic Gate"; Talk: International Workshop on Computational Electronics (IWCE), Nara, Japan; 2013-06-04 - 2013-06-07; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7, 238 - 239. BibTeX
144.	D. Osintsev, V. Sverdlov, S. Selberherr: "Spin Lifetime Enhancement by Shear Strain in Thin Silicon-On-Insulator Films"; Talk: Meeting of the Electrochemical Society, Advanced Semiconduc-tor-on-Insulator Technology and Related Physics, Toronto, Canada; 2013-05-12 - 2013-05-16; in "223^th ECS Meeting", (2013), 894, ISBN: 978-1-56677-866-4, 1. BibTeX
143.	H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr: "Impact of Device Parameters on the Reliability of the Magnetic Tunnel Junction Based Implication Logic Gates"; Poster: International Workshop "Functional Nanomaterials and Devices", Kyiv, Ukraine; 2013-04-08 - 2013-04-11; in "Proceedings of the 7th International Workshop "Functional Nanomaterials and Devices"", (2013), ISBN: 978-966-02-6779-4, 68 - 69. BibTeX
142.	D. Osintsev, V. Sverdlov, S. Selberherr: "Shear Strain: An Efficient Spin Lifetime Booster in Advanced UTB2 SOI MOSFETs"; Talk: International Workshop "Functional Nanomaterials and Devices", Kyiv, Ukraine; 2013-04-08 - 2013-04-11; in "Proceedings of the 7th International Workshop "Functional Nanomaterials and Devices"", (2013), ISBN: 978-966-02-6779-4, 64 - 65. BibTeX
141.	V. Sverdlov, S. Selberherr: "Silicon Spintronics and its Applications"; Talk: International Workshop "Functional Nanomaterials and Devices", Kyiv, Ukraine; (invited) 2013-04-08 - 2013-04-11; in "Proceedings of the 7th International Workshop "Functional Nanomaterials and Devices"", (2013), ISBN: 978-966-02-6779-4, 51 - 52. BibTeX
140.	D. Osintsev, V. Sverdlov, S. Selberherr: "Influence of the Valley Degeneracy on Spin Relaxation in Thin Silicon Films"; Poster: International Conference on Ultimate Integration of Silicon (ULIS), University of Warwick, UK; 2013-03-19 - 2013-03-21; in "The 14th Edition of the `International Conference on Ultimate Integration on Silicon´ (ULIS 2013)", (2013), ISBN: 978-1-4673-4802-7, 221 - 224 doi:10.1109/ULIS.2013.6523525. BibTeX
139.	D. Osintsev, V. Sverdlov, S. Selberherr: "Enhanced Intervalley Splitting and Reduced Spin Relaxation in Strained Thin Silicon Films"; Talk: APS March Meeting, Baltimore, Maryland, USA; 2013-03-18 - 2013-03-22; in "Bulletin American Physical Society (APS March Meeting)", (2013), 1 page(s) . BibTeX
138.	D. Osintsev, V. Sverdlov, S. Selberherr: "Reduction of the Surface Roughness Induced Spin Relaxation in SOI Structures: An Analytical Approach"; Talk: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Paris, France; 2013-01-21 - 2013-01-23; in "Conference Proceedings of the Ninth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits", (2013), 46, 1 page(s) . BibTeX
137.	A. Makarov, V. Sverdlov, S. Selberherr: "Geometry Dependence of the Switching Time in MTJs with a Composite Free Layer"; Talk: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona; (invited) 2012-12-02 - 2012-12-07; in "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2012), ISBN: 978-3-901578-25-0, 21. BibTeX
136.	D. Osintsev, V. Sverdlov, S. Selberherr: "Surface Roughness Induced Reduction of Spin Relaxation in Thin Silicon Films"; Talk: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona; (invited) 2012-12-02 - 2012-12-07; in "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)S)", (2012), ISBN: 978-3-901578-25-0, 33. BibTeX
135.	V. Sverdlov, A. Makarov, S. Selberherr: "Fast Switching in MTJs with a Composite Free Layer"; Talk: BIT's Annual World Congress of Nanoscience and Nanotechnology, Qingdao, China; 2012-10-26 - 2012-10-28; in "Abstracts of BIT's 2nd Annual World Congress of Nanoscience and Nanotechnology 2012", (2012), 291. BibTeX
134.	T. Windbacher, D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr: "Fully Electrically Read- Write Magneto Logic Gates"; Talk: The 5th International Conference on Micro-Nanoelectronics, Nanotechnologies & MEMS, Crete, Greece; 2012-10-07 - 2012-10-10; in "Book of Abstracts", (2012), 1 page(s) . BibTeX
133.	A. Makarov, V. Sverdlov, S. Selberherr: "High Thermal Stability and Low Switching Energy Barrier in Spin-transfer Torque RAM with Composite Free Layer"; Poster: International Conference on Solid State Devices and Materials, Kyoto, Japan; 2012-09-25 - 2012-09-27; in "Extended Abstracts of 2012 International Conference on Solid State Devices and Materials", (2012), 2 page(s) . BibTeX
132.	D. Osintsev, V. Sverdlov, S. Selberherr: "Modeling Spintronic Effects in Silicon"; Talk: International Workshop on Mathematics for Semiconductor Heterostructures (MSH), Berlin, Germany; (invited) 2012-09-24 - 2012-09-28; in "Abstracts International Workshop on Mathematics for Semiconductor Heterostructures (MSH)", (2012), 3 page(s) . BibTeX
131.	D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, S. Selberherr: "Electric Field and Strain Effects on Surface Roughness Induced Spin Relaxation in Silicon Field-Effect Transistors"; Talk: 24th European Modeling and Simulation Symposium (EMSS2012), Vienna, Austria; 2012-09-19 - 2012-09-21; in "Proceedings of the 24th European Modeling and Simulation Symposium", (2012), ISBN: 978-88-97999-01-0, 156 - 162. BibTeX
130.	H. Mahmoudi, V. Sverdlov, S. Selberherr: "MTJ-based Implication Logic Gates and Circuit Architecture for Large-Scale Spintronic Stateful Logic Systems"; Talk: European Solid-State Device Research Conference (ESSDERC), Bordeaux, France; 2012-09-17 - 2012-09-21; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2012), ISBN: 978-1-4673-3086-2, 254 - 257 doi:10.1109/ESSDERC.2012.6343381. BibTeX
129.	H. Mahmoudi, V. Sverdlov, S. Selberherr: "A Robust and Efficient MTJ-based Spintronic IMP Gate for New Logic Circuits and Large-Scale Integration"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 2012-09-05 - 2012-09-07; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2, 225 - 228. BibTeX
128.	A. Makarov, V. Sverdlov, S. Selberherr: "Study of Self-Accelerating Switching in MTJs with Composite Free Layer by Micromagnetic Simulations"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 2012-09-05 - 2012-09-07; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2, 229 - 232. BibTeX
127.	D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, S. Selberherr: "Electric Field and Strain Effects on Surface Roughness Induced Spin Relaxation in Silicon Field-Effect Transistors"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 2012-09-05 - 2012-09-07; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2, 153 - 156. BibTeX
126.	H. Mahmoudi, V. Sverdlov, S. Selberherr: "Spintronic Stateful Logic Gates using Magnetic Tunnel Junctions Written by Spin-Transfer Torque"; Poster: The 7th International Conference on Physics and Applications of Spin-related Phenomena in Semiconductors (PASPS-VII), Eindhoven, the Netherlands; 2012-08-05 - 2012-08-08; in "Book of Abstracts", (2012), P-6. BibTeX
125.	D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, S. Selberherr: "Valley Splitting and Spin Relaxation in Strained Silicon Quantum Wells"; Poster: The 7th International Conference on Physics and Applications of Spin-related Phenomena in Semiconductors (PASPS-VII), Eindhoven, the Netherlands; 2012-08-05 - 2012-08-08; in "Book of Abstracts", (2012), P-27. BibTeX
124.	D. Osintsev, Z. Stanojevic, O. Baumgartner, V. Sverdlov, S. Selberherr: "Strain-Induced Reduction of Surface Roughness Dominated Spin Relaxation in MOSFETs"; Poster: International Conference on Physics of Semiconductor (ICPS), Zurich, Switzerland; 2012-07-29 - 2012-08-03; in "31st International Conference on the Physics of Semiconductors (ICPS 2012)", (2012), 1566, ISBN: 978-0-7354-1194-4, 1 page(s) doi:10.1063/1.4848413. BibTeX
123.	A. Makarov, V. Sverdlov, S. Selberherr: "STT-RAM with a Composite Free Layer: High Thermal Stability, Low Switching Barrier, and Sharp Switching Time Distribution"; Talk: Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012), Sydney, Australia; 2012-07-23 - 2012-07-25; in "Abstract of Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012)", (2012), H4. BibTeX
122.	D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr: "Surface Roughness Induced Spin Scattering and Relaxation in Silicon SOI MOSFETs"; Talk: Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012), Sydney, Australia; 2012-07-23 - 2012-07-25; in "Abstract of Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012)", (2012), B3. BibTeX
121.	T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr: "Simulations of an Electrical Read-Write Operation of a Magnetic XOR Gate"; Talk: Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012), Sydney, Australia; 2012-07-23 - 2012-07-25; in "Abstract of Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012)", (2012), J3. BibTeX
120.	V. Sverdlov, S. Selberherr: "MOSFET and Spin Transistor Simulations"; Talk: 2012 CMOS Emerging Technologies, Vancouver, BC Canada; (invited) 2012-07-18 - 2012-07-21; in "Abstract of 2012 CMOS Emerging Technologies", (2012), 1 page(s) . BibTeX
119.	A. Makarov, V. Sverdlov, S. Selberherr: "Reduction of the Switching Current in Spin Transfer Torque Random Access Memory"; Poster: Advanced Research Workshop on Future Trends in Microelectronics: Into the Cross Currents, Corsica, France; 2012-06-25 - 2012-06-29; in "Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Into the Cross Currents", (2012), 49. BibTeX
118.	H. Mahmoudi, V. Sverdlov, S. Selberherr: "Novel Memristive Charge- and Flux-Based Sensors"; Talk: The 8th Conference on Ph.D. Research in Microelectronics & Electronics- PRIME 2012, Aachen, Germany; 2012-06-12 - 2012-06-15; in "Proceedings of the 8th Conference on Ph.D. Research in Microelectronics & Electronics", (2012), ISBN: 978-3-8007-3442-9, 4 page(s) . BibTeX
117.	H. Mahmoudi, V. Sverdlov, S. Selberherr: "State Drift Optimization of Memristive Stateful IMP Logic Gates"; Poster: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 2012-05-22 - 2012-05-25; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2012), 243 - 244. BibTeX
116.	A. Makarov, V. Sverdlov, S. Selberherr: "Micromagnetic Simulations of an MTJ with a Composite Free Layer for High-Speed Spin Transfer Torque RAM"; Poster: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 2012-05-22 - 2012-05-25; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2012), 225 - 226. BibTeX
115.	D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, S. Selberherr: "Reduction of Surface Roughness Induced Spin Relaxation in MOSFETs by Strain"; Poster: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 2012-05-22 - 2012-05-25; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2012), 229 - 230. BibTeX
114.	A. Makarov, V. Sverdlov, S. Selberherr: "Recent Developments in Advanced Memory Modeling"; Talk: International Conference on Microelectronics (MIEL), Nis, Serbia; (invited) 2012-05-13 - 2012-05-16; in "Proceedings of the International Conference on Microelectronics (MIEL)", (2012), ISBN: 978-1-4673-0235-7, 49 - 52 doi:10.1109/MIEL.2012.6222795. BibTeX
113.	H. Mahmoudi, V. Sverdlov, S. Selberherr: "Influence of Geometry on Memristive Behavior of the Domain Wall Spintronic Memristors and its Applications for Measurements"; Poster: International Conference on Superconductivity and Magnetism, Istanbul, Turkey; 2012-04-29 - 2012-05-04; in "Proceedings of International Conference on Superconductivity and Magnetism (ICSM 2012)", (2012), 1 page(s) . BibTeX
112.	A. Makarov, S. Selberherr, V. Sverdlov: "Emerging Non-Volatile Memories for Ultra-Low Power Applications"; Talk: Informationstagung Mikroelektronik (ME), Vienna, Austria; (invited) 2012-04-23 - 2012-04-24; in "Tagungsband zur Informationstagung Mikroelektronik 12", (2012), ISBN: 978-3-85133-071-7, 21 - 24. BibTeX
111.	A. Makarov, V. Sverdlov, S. Selberherr: "Modeling Emerging Non-Volatile Memories: Current Trends and Challenges"; Talk: International Conference on Solid State Devices and Materials Science (SSDMS), Macao, China; 2012-04-01 - 2012-04-02; in "Physics Procedia", (2012), 99 - 104 doi:10.1016/j.phpro.2012.03.056. BibTeX
110.	A. Makarov, V. Sverdlov, S. Selberherr: "New Trends in Microelectronics: Towards an Ultimate Memory Concept"; Talk: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Playa del Carmen, Mexico; (invited) 2012-03-14 - 2012-03-17; in "Proceedings of the 8th International Caribbean Conference on Devices, Circuits and Systems", (2012), ISBN:978-1-4566-1117-6, 2 page(s) doi:10.1109/ICCDCS.2012.6188887. BibTeX
109.	V. Sverdlov, A. Makarov, S. Selberherr: "Switching Energy Barrier and Current Reduction in MTJs with Composite Free Layer"; Talk: APS March Meeting, Boston, USA; 2012-02-27 - 2012-03-02; in "Bulletin American Physical Society (APS March Meeting 2012)", (2012), 1 page(s) . BibTeX
108.	D. Osintsev, V. Sverdlov, S. Selberherr: "Using Strain for the Reduction of Surface Roughness Induced Spin Relaxation in Field-Effect Transistors with Thin Silicon Body"; Poster: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Montpellier, France; 2012-01-23 - 2012-01-25; in "Conference Proceedings of the VIII Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits", (2012), 77 - 78. BibTeX
107.	H. Mahmoudi, V. Sverdlov, S. Selberherr: "Domain-Wall Spintronic Memristor for Capacitance and Inductance Sensing"; Talk: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 2011-12-07 - 2011-12-09; in "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3, 2 page(s) . BibTeX
106.	A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr: "Switching Time and Current Reduction Using a Composite Free Layer in Magnetic Tunnel Junctions"; Poster: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 2011-12-07 - 2011-12-09; in "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3, 2 page(s) . BibTeX
105.	D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr: "Properties of InAs- and Silicon-Based Ballistic Spin Field-Effect Transistors Operated at Elevated Temperature"; Talk: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 2011-12-07 - 2011-12-09; in "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3, 2 page(s) . BibTeX
104.	A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr: "Optimization of the Penta-Layer Magnetic Tunnel Junction for Fast STTRAM Switching"; Talk: International Symposium on Advanced Nanodevices and Nanotechnology, Kaanapali,Hawaii, USA; 2011-12-04 - 2011-12-09; in "Abstracts International Symposium on Advanced Nanostructures and Nano-Devices (ISANN)", (2011), 2 page(s) . BibTeX
103.	D. Osintsev, A. Makarov, S. Selberherr, V. Sverdlov: "An InAs-Based Spin Field-Effect Transistor: A Path to Room Temperature Operation"; Talk: International Symposium on Advanced Nanodevices and Nanotechnology, Kaanapali,Hawaii, USA; 2011-12-04 - 2011-12-09; in "Abstracts International Symposium on Advanced Nanostructures and Nano-Devices (ISANN)", (2011), 2 page(s) . BibTeX
102.	A. Makarov, S. Selberherr, V. Sverdlov: "Modeling of Advanced Memories"; Talk: Conference on Electron Devices and Solid-State Circuits (EDSSC), Tianjin, China; (invited) 2011-11-17 - 2011-11-18; in "Proc. IEEE Conference on Electron Devices and Solid-State Circuits EDSSC", (2011), ISBN: 978-1-4577-1998-1, 2 page(s) doi:10.1109/EDSSC.2011.6117568. BibTeX
101.	A. Makarov, V. Sverdlov, D. Osintsev, J. Weinbub, S. Selberherr: "Modeling of the Advanced Spin Transfer Torque Memory: Macro- and Micromagnetic Simulations"; Talk: The European Simulation and Modelling Conference (ESM), Guimaraes, Portugal; 2011-10-24 - 2011-10-26; in "Proceedings of the 25th European Simulation and Modelling Conference", (2011), ISBN: 978-90-77381-66-3, 177 - 181. BibTeX
100.	A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr: "Fast Switching in Magnetic Tunnel Junctions with Double Barrier Layer"; Poster: International Conference on Solid State Devices and Materials, Nagoya, Japan; 2011-09-28 - 2011-09-30; in "Extended Abstracts of 2011 International Conference on Solid State Devices and Materials", (2011), ISBN: 978-4-86348-200-5, 2 page(s) . BibTeX
99.	A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr: "About the Switching Process in Magnetic Tunnel Junctions with Two Fixed Layers and One Soft Magnetic Layer"; Poster: Soft Magnetic Materials Conference (SMM), Kos, Greece; 2011-09-18 - 2011-09-22; in "Abstracts Book of The 20th International Conference on Soft Magnetic Materials", (2011), ISBN: 978-960-9534-14-7, 444. BibTeX
98.	D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr: "Properties of InAs- and Silicon-Based Ballistic Spin Field-Effect Transistors"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 59 - 62 doi:10.1109/SISPAD.2011.6035049. BibTeX
97.	D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr: "Ballistic Transport Properties of Spin Field-Effect Transistors Built on Silicon and InAs Fins"; Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Joao Pessoa, Brazil; 2011-08-30 - 2011-09-02; in "ECS Transactions", (2011), ISBN: 978-1-56677-900-5, 155 - 162 doi:10.1149/1.3615189. BibTeX
96.	A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr: "Modeling of the Switching Process in Multi-Layered Magnetic Tunnel Junctions"; Poster: 6th International School and Conference on Spintronics and Quantum Information Technology (SPINTECH6), Matsue, Japan; 2011-08-01 - 2011-08-05; in "Proceedings of International School and Conference on Spintronics and Quantum Information Technology", (2011), 238. BibTeX
95.	D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr: "Ballistic Transport in Spin Field-Effect Transistors Built on Si and InAs"; Poster: 6th International School and Conference on Spintronics and Quantum Information Technology (SPINTECH6), Matsue, Japan; 2011-08-01 - 2011-08-05; in "Proceedings of International School and Conference on Spintronics and Quantum Information Technology", (2011), 229. BibTeX
94.	A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr: "Micromagnetic Modeling of Penta-Layer Magnetic Tunnel Junctions with a Composite Soft Layer"; Talk: 2nd Advanced Workshop on Spin and Charge Properties of Low Dimensional Systems, Brasov, Romania; 2011-07-17 - 2011-07-22; in "Abstracts of Advanced Workshop on Spin and Charge Properties of Low Dimensional Systems", (2011), 1 page(s) . BibTeX
93.	D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr: "Ballistic Transport in Spin Field-Effect Transistors Built on Silicon"; Talk: 2nd Advanced Workshop on Spin and Charge Properties of Low Dimensional Systems, Brasov, Romania; 2011-07-17 - 2011-07-22; in "Abstracts of Advanced Workshop on Spin and Charge Properties of Low Dimensional Systems", (2011), 1 page(s) . BibTeX
92.	D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr: "Transport Modeling in Spin Field-Effect Transistors Built on Silicon Fins"; Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 2011-06-06 - 2011-06-10; in "Abstracts Intl. Conf. on Large-Scale Scientific Computations", (2011), 64. BibTeX
91.	D. Osintsev, V. Sverdlov, Z. Stanojevic, A. Makarov, J. Weinbub, S. Selberherr: "Properties of Silicon Ballistic Spin Fin-Based Field-Effect Transistors"; Talk: Meeting of the Electrochemical Society (ECS), Montreal, Canada; 2011-05-01 - 2011-05-06; in "Meeting Abstracts", (2011), MA2011-01(23): 1453, 1. BibTeX
90.	Z. Stanojevic, V. Sverdlov, S. Selberherr: "Subband Structure Engineering in Silicon-on-Insulator FinFETs using Confinement"; Poster: Meeting of the Electrochemical Society, Advanced Semiconduc-tor-on-Insulator Technology and Related Physics, Montreal; 2011-05-01 - 2011-05-06; in "219^th ECS Meeting", (2011), Vol.35, No.5, ISBN: 978-1-56677-866-4, 117 - 122 doi:10.1149/1.3570785. BibTeX
89.	A. Makarov, V. Sverdlov, D. Kryzhanovsky, M. Girkin, S. Selberherr: "Modeling of Non-Volatile Memory Cells of RRAM Type on High Performance Computer Systems with the Monte-Carlo Method"; Poster: Parallel Computing Technologies (PaVT), Moscow, Russia; 2011-03-28 - 2011-04-01; in "Book of Abstracts: Parallel Computing Technologies (PaVT)", (2011), 1 page(s) . BibTeX
88.	D. Osintsev, V. Sverdlov, Z. Stanojevic, S. Selberherr: "Ballistic Spin Field Effect Transistor Based on Silicon Nanowires"; Talk: APS March Meeting, Dallas, Texas, USA; 2011-03-21 - 2011-03-25; in "Bulletin American Physical Society (APS March Meeting 2011)", (2011), . BibTeX
87.	D. Osintsev, V. Sverdlov, Z. Stanojevic, A. Makarov, S. Selberherr: "Transport Properties of Spin Field-Effect Transistors Built on Si and InAs"; Talk: International Conference on Ultimate Integration of Silicon (ULIS), Cork, Ireland; 2011-03-14 - 2011-03-16; in "Proceedings of the 12th International Conference on Ultimate Integration on Silicon (ULIS)", (2011), ISBN: 978-1-4577-0090-3, 210 - 213 doi:10.1109/ULIS.2011.5757998. BibTeX
86.	D. Osintsev, V. Sverdlov, Z. Stanojevic, A. Makarov, S. Selberherr: "Ballistic Spin Field-Effect Transistors Built on Silicon Fins"; Poster: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Granada, Spain; 2011-01-17 - 2011-01-19; in "Conference Proceedings of the VII Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits", (2011), 59 - 60. BibTeX
85.	Z. Stanojevic, V. Sverdlov, O. Baumgartner, H. Kosina: "Subband Engineering in n-Type Silicon Nanowires using Strain and Confinement"; Poster: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Granada, Spain; 2011-01-17 - 2011-01-19; in "Conference Proceedings of the VII Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits", (2011), 99 - 100. BibTeX
84.	V. Sverdlov, S. Selberherr: "Strain Engineering Techniques: A Rigorous Physical Review"; Talk: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona; (invited) 2010-12-05 - 2010-12-10; in "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2010), TH-05. BibTeX
83.	V. Sverdlov, Z. Stanojevic, O. Baumgartner, S. Selberherr: "Spin-Driven Silicon Devices Utilizing Enhanced Valley Splitting"; Talk: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona; (invited) 2010-12-05 - 2010-12-10; in "Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS)", (2010), TH-06. BibTeX
82.	M. Pourfath, V. Sverdlov, S. Selberherr: "Transport Modeling for Nanoscale Semiconductor Devices"; Talk: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Shanghai; (invited) 2010-11-01 - 2010-11-04; in "Proceedings of the International Conference on Solid-State and Integrated Circuit Technology (ICSICT)", (2010), 4, ISBN: 978-1-4244-5799-1, 1737 - 1740. BibTeX
81.	V. Sverdlov, S. Selberherr: "Modeling of Modern MOSFETs with Strain"; Talk: International Workshop on Semiconductor Devices Modeling and Electronic Materials, La Plata, Buenos Aires, Argentina; (invited) 2010-11-01 - 2010-11-03; in "Proceedings of the 1st International Workshop on Semiconductor Devices Modeling and Electronic (SDMEM2010)", (2010), ISBN: 978-950-34-0794-3, 1 - 11. BibTeX
80.	A. Makarov, V. Sverdlov, S. Selberherr: "A Monte Carlo Simulation of Reproducible Hysteresis in RRAM"; Talk: International Workshop on Computational Electronics (IWCE), Pisa, Italy; 2010-10-26 - 2010-10-29; in "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2010), ISBN: 978-1-4244-9381-4, 35 - 38 doi:10.1109/IWCE.2010.5677934. BibTeX
79.	Z. Stanojevic, O. Baumgartner, V. Sverdlov, H. Kosina: "Electronic Band Structure Modeling in Strained Si-Nanowires: Two Band k · p Versus Tight Binding"; Talk: International Workshop on Computational Electronics (IWCE), Pisa, Italy; 2010-10-26 - 2010-10-29; in "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2010), ISBN: 978-1-4244-9381-4, 5 - 8 doi:10.1109/IWCE.2010.5677927. BibTeX
78.	A. Makarov, J. Weinbub, V. Sverdlov, S. Selberherr: "First-Principles Modeling of Bipolar Resistive Switching in Metal-Oxide Based Memory"; Talk: The European Simulation and Modelling Conference (ESM), Hasselt; 2010-10-25 - 2010-10-27; in "Proceedings of the European Simulation and Modelling Conference (ESM)", (2010), ISBN: 978-90-77381-57-1, 181 - 186. BibTeX
77.	A. Makarov, V. Sverdlov, S. Selberherr: "Monte Carlo Simulation of Bipolar Resistive Switching Memories"; Talk: Nanoelectronics Days 2010, Aachen; 2010-10-04 - 2010-10-07; in "Proceedings of the Nanoelectronics Days 2010", (2010), 22. BibTeX
76.	V. Sverdlov, Z. Stanojevic, O. Baumgartner, S. Selberherr: "Enhanced Valley Splitting in Silicon Nanowires and Point Contacts"; Poster: Nanoelectronics Days 2010, Aachen, Germany; 2010-10-04 - 2010-10-07; in "Abstract Book of the Nanoelectronics Days 2010", (2010), 118. BibTeX
75.	A. Makarov, V. Sverdlov, S. Selberherr: "A Stochastic Model of Bipolar Resistive Switching in Metal-Oxide-Based Memory"; Talk: European Solid-State Device Research Conference (ESSDERC), Sevilla; 2010-09-14 - 2010-09-16; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2010), ISBN: 978-1-4244-6660-3, 396 - 399. BibTeX
74.	A. Makarov, V. Sverdlov, S. Selberherr: "Stochastic Modeling Hysteresis and Resistive Switching in Bipolar Oxide-Based Memory"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Bologna, Italy; 2010-09-06 - 2010-09-08; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2010), ISBN: 978-1-4244-7699-2, 237 - 240 doi:10.1109/SISPAD.2010.5604517. BibTeX
73.	A. Makarov, V. Sverdlov, S. Selberherr: "Modelling of the SET and RESET Process in Bipolar Resistive Oxide-Based Memory Using Monte Carlo Simulations"; Talk: International Conference on Numerical Methods and Applications (NM&A), Borovets; 2010-08-20 - 2010-08-24; in "Abstracts of the International Conference on Numerical Methods and Applications (NM&A)", (2010), B-39. BibTeX
72.	V. Sverdlov, Z. Stanojevic, O. Baumgartner, S. Selberherr: "Confinement-Enhanced Valley Splitting for Spin-Driven Silicon Devices"; Talk: 6^th International Conference on the Physics and Application of Spin Related Phenomena in Semiconductors (PASPS-VI), Tokyo; 2010-08-01 - 2010-08-04; in "Proceedings of the 6^th International Conference on the Physics and Application of Spin Related Phenomena in Semiconductors (PASPS-VI)", (2010), 273 - 274. BibTeX
71.	A. Makarov, V. Sverdlov, S. Selberherr: "Stochastic Modeling of the Resistive Switching Mechanism in Oxide-Based Memory"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2010-07-05 - 2010-07-09; in "Proceedings of the 17^th International Symposium on the Physics & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9, 309 - 312. BibTeX
70.	A. Makarov, V. Sverdlov, S. Selberherr: "Modeling of Resistive Switching in RRAM Using Monte Carlo Simulations"; Poster: Workshop on Dielectrics in Microelectronics (WODIM), Bratislava; 2010-06-28 - 2010-06-30; in "Book of Abstracts", (2010), 141. BibTeX
69.	M. Pourfath, V. Sverdlov, S. Selberherr: "Modeling Demands for Nanoscale Devices"; Talk: Device Research Conference, South Bend; (invited) 2010-06-21 - 2010-06-23; in "Proceedings of the Device Research Conference (DRC)", (2010), ISBN: 978-1-4244-7870-5, 211 - 214. BibTeX
68.	V. Sverdlov, S. Selberherr: "Modeling Floating Body Z-RAM Storage Cells"; Talk: International Conference on Microelectronics (MIEL), Nis; (invited) 2010-05-16 - 2010-05-19; in "Proceedings of the International Conference on Microelectronics (MIEL)", (2010), ISBN: 978-1-4244-7198-0, 45 - 50 doi:10.1109/MIEL.2010.5490533. BibTeX
67.	V. Sverdlov, S. Selberherr: "Scalability of a Second Generation Z-RAM Cell: A Computational Study"; Talk: International Conference on Computational & Experimental Engineering and Sciences (ICCES), Las Vegas; 2010-03-28 - 2010-04-01; in "Proceedings of the International Conference on Computational & Experimental Engineering and Sciences (ICCES)", (2010), ISBN: 978-0-9824205-3-9, 232 - 247. BibTeX
66.	Z. Stanojevic, O. Baumgartner, V. Sverdlov, H. Kosina: "Subband Structure of Silicon Nanowires from the Hensel-Hasegawa-Nakayama Model"; Talk: International Conference on Ultimate Integration of Silicon (ULIS), Glasgow, Scotland; 2010-03-18 - 2010-03-19; in "Proceedings of the 11th International Conference on Ultimate Integration o Silicon", (2010), 69 - 72. BibTeX
65.	V. Sverdlov, O. Baumgartner, S. Selberherr: "Large Valley Splitting in Slightly Misaligned Uniaxially Strained Silicon Films"; Talk: APS March Meeting, Portland; 2010-03-15 - 2010-03-19; in "Bulletin American Physical Society (APS March Meeting 2010)", (2010), 49/2, B9.00001. BibTeX
64.	O. Baumgartner, V. Sverdlov, H. Kosina, S. Selberherr: "Strain-Induced Valley Splitting in Slightly Misaligned Silicon Films"; Poster: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Grenoble; 2010-01-25 - 2010-01-27; in "Conference Proceedings of the Sixth Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits", (2010), 91 - 92. BibTeX
63.	V. Sverdlov, O. Baumgartner, S. Selberherr: "Subband Parameters in Strained (110) Silicon Films from the Hensel-Hasegawa-Nakayama Model of the Conduction Band"; Talk: International Semiconductor Device Research Symposium (ISDRS), College Park; 2009-12-09 - 2009-12-11; in "Proceedings of the International Semiconductor Device Research Symposium (ISDRS)", (2009), ISBN: 978-1-4244-6031-1, TP6-03.1 - 2. BibTeX
62.	V. Sverdlov, S. Selberherr: "Scaling of Advanced Floating Body Z-RAM Storage Cells: A Modeling Approach"; Poster: International Conference on Very Large Scale Integration (VLSI-SoC), Florianopolis; 2009-10-12 - 2009-10-14; in "Proceedings of the International Conference on Very Large Scale Integration (VLSI-SoC)", (2009), 21, ISBN: 978-3-90188-237-1, 4 page(s) . BibTeX
61.	S. E. Tyaginov, V. Sverdlov, W. Gös, T. Grasser: "Impact of O-Si-O Bond Angle Fluctuations on the Si-O Bond-Breakage Rate"; Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Bordeaux; 2009-10-05 - 2009-10-09; in "Proceedings of the 20th European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2009), . BibTeX
60.	V. Sverdlov, O. Baumgartner, T. Windbacher, S. Selberherr: "Modeling Techniques for Strained CMOS Technology"; Talk: Meeting of the Electrochemical Society, ULSI Process Integration, Vienna; (invited) 2009-10-04 - 2009-10-09; in "216^th ECS Meeting", (2009), ISBN: 978-1-56677-744-5, 3 - 18. BibTeX
59.	V. Sverdlov, O. Baumgartner, T. Windbacher, F. Schanovsky, S. Selberherr: "Thickness Dependence of the Effective Masses in a Strained Thin Silicon Film"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), San Diego, CA, USA; 2009-09-09 - 2009-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2009), ISBN: 978-1-4244-3947-8, 51 - 54 doi:10.1109/SISPAD.2009.5290252. BibTeX
58.	V. Sverdlov, O. Baumgartner, T. Windbacher, F. Schanovsky, S. Selberherr: "Impact of Confinement and Stress on the Subband Parameters in Ultra-Thin Silicon Films"; Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Natal; 2009-08-31 - 2009-09-03; in "ECS Transactions", (2009), ISBN: 978-1-56677-737-7, 389 - 396. BibTeX
57.	V. Sverdlov, O. Baumgartner, T. Windbacher, F. Schanovski, S. Selberherr: "Enhanced by Shear Strain Splitting of Unprimed Subbands in (001) Silicon Films and Point Contacts"; Poster: International Conference on Spintronics and Quantum Information Technology (SPINTECH), Cracow; 2009-07-07 - 2009-07-11; in "Abstracts of the International Conference on Spintronics and Quantum Information Technology (SPINTECH)", (2009), 301. BibTeX
56.	V. Sverdlov, O. Baumgartner, S. E. Tyaginov, T. Windbacher, S. Selberherr: "Subband Structure in Ultra-Thin Silicon Films"; Talk: 17^th International Symposium NANOSTRUCTURES: Physics and Technology, Minsk; 2009-06-22 - 2009-06-26; in "Proceedings of the International Symposium NANOSTRUCTURES: Physics and Technology", (2009), 62 - 63. BibTeX
55.	V. Sverdlov, O. Baumgartner, T. Windbacher, S. Selberherr: "Silicon for Spintronic Applications: Strain-Enhanced Valley Splitting"; Poster: Advanced Research Workshop on Future Trends in Microelectronics: Unmapped Roads, Sardinia; 2009-06-14 - 2009-06-19; in "Abstracts Advanced Research Workshop on Future Trends in Microelectronics: Unmapped Roads", (2009), 58. BibTeX
54.	V. Sverdlov, O. Baumgartner, T. Windbacher, S. Selberherr: "Perspectives of Silicon for Future Spintronic Applications from the Peculiarities of the Subband Structure in Ultra-Thin Films"; Talk: 2009 Silicon Nanoelectronics Workshop, Kyoto; 2009-06-13 - 2009-06-14; in "Proceedings of 2009 Silicon Nanoelectronics Workshop", (2009), 95 - 96. BibTeX
53.	V. Sverdlov, M. Vasicek, J. Cervenka, T. Grasser, H. Kosina, S. Selberherr: "Transport in Nanostructures: A Comparative Analysis Using Monte Carlo Simulation, the Spherical Harmonic Method, and Higher Moments Models"; Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol; 2009-06-04 - 2009-06-08; in "Abstracts of the International Conference on Large-Scale Scientific Computations (LSSC)", (2009), 93. BibTeX
52.	O. Baumgartner, M. Karner, V. Sverdlov, H. Kosina: "Numerical Quadrature of the Subband Distribution Functions in Strained Silicon UTB Devices"; Talk: International Workshop on Computational Electronics (IWCE), Beijing, China; 2009-05-27 - 2009-05-29; in "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2009), ISBN: 978-1-4244-3926-3, 53 - 56 doi:10.1109/IWCE.2009.5091131. BibTeX
51.	V. Sverdlov, O. Baumgartner, H. Kosina, S. Selberherr, F. Schanovsky, D. Esseni: "The Linear Combination of Bulk Bands-Method for Electron and Hole Subband Calculations in Strained Silicon Films and Surface Layers"; Talk: International Workshop on Computational Electronics (IWCE), Beijing, China; 2009-05-27 - 2009-05-29; in "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2009), ISBN: 978-1-4244-3926-3, 49 - 52 doi:10.1109/IWCE.2009.5091158. BibTeX
50.	S. E. Tyaginov, V. Sverdlov, W. Gös, T. Grasser: "Statistics of Si-O Bond-Breakage Rate Variations induced by O-Si-O Angle Fluctuations"; Talk: International Workshop on Computational Electronics (IWCE), Beijing, China; 2009-05-27 - 2009-05-29; in "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2009), ISBN: 978-1-4244-3926-3, 29 - 32 doi:10.1109/IWCE.2009.5091156. BibTeX
49.	T. Windbacher, V. Sverdlov, S. Selberherr: "Modeling of Low Concentrated Buffer DNA Detection with Suspend Gate Field-Effect Transistors (SGFET)"; Poster: International Workshop on Computational Electronics (IWCE), Beijing, China; 2009-05-27 - 2009-05-29; in "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2009), ISBN: 978-1-4244-3926-3, 169 - 172 doi:10.1109/IWCE.2009.5091122. BibTeX
48.	V. Sverdlov, O. Baumgartner, T. Windbacher, F. Schanovsky, S. Selberherr: "Impact of Confinement of Semiconductor and Band Engineering on Future Device Performance"; Talk: Meeting of the Electrochemical Society, Silicon-on-Insulator Technology and Devices, San Francisco; (invited) 2009-05-24 - 2009-05-29; in "215^th ECS Meeting", (2009), 19/4, ISBN: 978-1-56677-712-4, 15 - 26. BibTeX
47.	S. E. Tyaginov, W. Gös, T. Grasser, V. Sverdlov, P. Schwaha, R. Heinzl, F. Stimpfl: "Description of Si-O Bond Breakage Using Pair-Wise Interatomic Potentials Under Consideration of the Whole Crystal"; Talk: International Reliability Physics Symposium (IRPS), Montreal; 2009-04-26 - 2009-04-30; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2009), 514 - 522. BibTeX
46.	S. E. Tyaginov, V. Sverdlov, W. Gös, P. Schwaha, R. Heinzl, F. Stimpfl, T. Grasser: "Impact of the Surrounding Network on the Si-O Bond-Breakage Energetics"; Talk: Materials Research Society Spring Meeting (MRS), San Francisco; 2009-04-13 - 2009-04-17; in "Proceedings of the 2009 MRS Spring Meeting", (2009), . BibTeX
45.	S. E. Tyaginov, V. Sverdlov, W. Gös, P. Schwaha, R. Heinzl, F. Stimpfl, T. Grasser: "Si-O Bond-Breakage Energetics under Consideration of the Whole Crystal"; Talk: International Semiconductor Technology Conference & China Semiconductor Technology International Conference, Shanghai; 2009-03-19 - 2009-03-20; in "Proceedings of the International Semiconductor Technology Conference & China Semiconductor Technology International Conference", (2009), 84. BibTeX
44.	V. Sverdlov, T. Windbacher, O. Baumgartner, F. Schanovsky, S. Selberherr: "Valley Splitting in Thin Silicon Films from a Two-Band k·p Model"; Poster: International Conference on Ultimate Integration of Silicon (ULIS), Aachen; 2009-03-18 - 2009-03-20; in "Proceedings of the 10^th International Conference on Ultimate Integration of Silicon", (2009), 277 - 280. BibTeX
43.	O. Baumgartner, M. Karner, V. Sverdlov, H. Kosina: "Numerical Study of the Electron Subband Structure in Strained Silicon UTB Devices"; Talk: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Göteborg; 2009-01-19 - 2009-01-21; in "EUROSOI 2009 Conference Proceedings", (2009), 57 - 58. BibTeX
42.	V. Sverdlov, T. Windbacher, O. Baumgartner, S. Selberherr: "Electron Subband Structure and Valley Splitting in Silicon Ultra-Thin Body SOI Structures from the Two-Band k.p Model"; Poster: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Göteborg; 2009-01-19 - 2009-01-21; in "EUROSOI 2009 Conference Proceedings", (2009), 81 - 82. BibTeX
41.	T. Windbacher, V. Sverdlov, S. Selberherr, C. Heitzinger, N. Mauser, Ch. Ringhofer: "Study of the Properties of Biotin-Streptavidin Sensitive Biofets"; Talk: 2nd International Joint Conference on Biomedical Engineering Systems and Technologies (BIOSTEC), Porto; 2009-01-14 - 2009-01-17; in "Final Program and Book of Abstracts", (2009), 42. BibTeX
40.	T. Windbacher, V. Sverdlov, S. Selberherr, C. Heitzinger, N. Mauser, Ch. Ringhofer: "Study of the Properties of Biotin-Streptavidin Sensitive BioFETs"; Talk: 2nd International Joint Conference on Biomedical Engineering Systems and Technologies (BIOSTEC), Porto, Portugal; 2009-01-14 - 2009-01-17; in "Proceedings of the International Conference on Biomedical Electronics and Devices (BIODEVICES)", (2009), ISBN: 978-989-8111-72-2, 24 - 30. BibTeX
39.	V. Sverdlov, S. Selberherr: "Modeling and Simulation of Advanced Floating Body Z-RAM Memory Cells"; Talk: European Simulation and Modeling Conference (ESMC), Le Havre; 2008-10-27 - 2008-10-29; in "Proceedings European Simulation and Modeling Conference (ESM)", (2008), ISBN: 978-90-77381-44-1, 380 - 384. BibTeX
38.	S. Okhonin, M. Nagoga, C. Lee, J. Colinge, A. Afzalian, R. Yan, N. Akhavan, W. Xiong, V. Sverdlov, S. Selberherr, C. Mazure: "Ultra-Scaled Z-RAM Cell"; Talk: 2008 IEEE International SOI Conference, New Paltz; 2008-10-06 - 2008-10-09; in "2008 IEEE International SOI Conference Proceedings", (2008), ISBN: 978-1-4244-1954-8, 157 - 158. BibTeX
37.	T. Windbacher, V. Sverdlov, S. Selberherr, C. Heitzinger: "A General Bottom-Up Modeling Approach for BioFETs"; Poster: 2. Internationale Konferenz NanoSens2008, Vienna; 2008-09-29 - 2008-09-30; in "Abstracts Conf.on Nanosensors for Industrial Applications (NANOSENS)", (2008), . BibTeX
36.	V. Sverdlov, T. Windbacher, S. Selberherr: "Mobility Enhancement in Thin Silicon Films: Strain and Thickness Dependences of the Effective Masses and Non-Parabolicity Parameter"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 2008-09-09 - 2008-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7, 145 - 148 doi:10.1109/SISPAD.2008.4648258. BibTeX
35.	T. Windbacher, V. Sverdlov, S. Selberherr, C. Heitzinger, N. Mauser, Ch. Ringhofer: "Simulation of Field-Effect Biosensors (BioFETs)"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 2008-09-09 - 2008-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7, 193 - 196 doi:10.1109/SISPAD.2008.4648270. BibTeX
34.	V. Sverdlov, S. Selberherr: "Mobility Modeling in Advanced MOSFETs with Ultra-Thin Silicon Body under Stress"; Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Gramado; 2008-09-01 - 2008-09-04; in "ECS Transactions", (2008), ISBN: 978-1-56677-646-2, 159 - 168. BibTeX
33.	T. Windbacher, V. Sverdlov, S. Selberherr, C. Heitzinger, N. Mauser, Ch. Ringhofer: "Simulation of Field-Effect Biosensors (BioFETs) for Biotin-Streptavidin Complexes"; Poster: International Conference on Physics of Semiconductor (ICPS), Rio de Janeiro; 2008-07-27 - 2008-08-01; in "PHYSICS OF SEMICONDUCTORS: 29^th International Conference on the Physics of Semiconductors", (2008), ISBN: 978-0-7354-0736-7, 507 - 508. BibTeX
32.	W. Gös, M. Karner, V. Sverdlov, T. Grasser: "A Rigorous Model for Trapping and Detrapping in Thin Gate Dielectrics"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2008-07-07 - 2008-07-11; in "Proceedings 15^th International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2008), ISBN: 978-1-4244-2039-1, 249 - 254. BibTeX
31.	M. Pourfath, V. Sverdlov, H. Kosina: "On the Role of Off‐Diagonal Dephasing in Carbon Nanotube Based Photo‐Detectors"; Talk: 1^st FoNE Conference Nanoelectronics 2008, Taormina, Italy; 2008-06-29 - 2008-07-03; in "1^st Fone Conference Nanoelectronics 2008", (2008), 41. BibTeX
30.	V. Sverdlov, S. Selberherr: "Strain-Controlled Valley Splitting in Si-SiGe Heterostructures"; Talk: International SiGe Technology and Device Meeting (ISTDM), Hsinchu; 2008-05-11 - 2008-05-14; in "Abstract Book", (2008), 20 - 21. BibTeX
29.	V. Sverdlov, T. Windbacher, H. Kosina, S. Selberherr: "Stress-Induced Valley Splitting in Silicon Thin Films"; Talk: International Conference on Ultimate Integration of Silicon (ULIS), Udine; 2008-03-12 - 2008-03-14; in "Proceedings of the 9th International Conference on Ultimate Integration on Silicon", (2008), ISBN: 978-1-4244-1730-8, 93 - 96. BibTeX
28.	V. Sverdlov, H. Kosina, S. Selberherr: "Electron Subband Structure and Controlled Valley Splitting in Silicon Thin-Body SOI FETs: Two-Band k.p Theory and Beyond"; Talk: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Cork; 2008-01-23 - 2008-01-25; in "Proceedings of the 4^th Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits", (2008), 41 - 42. BibTeX
27.	V. Sverdlov, G. Karlowatz, S. Dhar, H. Kosina, S. Selberherr: "Two-Band k·p Model for the Conduction Band in Silicon: Impact of Strain and Confinement on Band Structure and Mobility"; Talk: International Semiconductor Device Research Symposium (ISDRS), Maryland; 2007-12-12 - 2007-12-14; in "2007 International Semiconductor Device Research Symposium", (2007), ISBN: 978-1-4244-1892-3, 2 page(s) . BibTeX
26.	V. Sverdlov, G. Karlowatz, H. Kosina, S. Selberherr: "Two-Band k.p Model for the Conduction Band in Silicon"; Talk: The European Simulation and Modelling Conference (ESM), Malta; 2007-10-22 - 2007-10-24; in "Proceedings European Simulation and Modeling Conference", (2007), ISBN: 978-90-77381-36-6, 220 - 224. BibTeX
25.	V. Sverdlov, H. Kosina: "Electron Subband Dispersions in Ultra-Thin Silicon Films from a Two-Band k·p Theory"; Poster: International Workshop on Computational Electronics (IWCE), Amherst, MA, USA; 2007-10-08 - 2007-10-10; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2007), 92 - 93. BibTeX
24.	V. Sverdlov, H. Kosina, S. Selberherr: "Comparative Analysis of Pseudo-Potential and Tight-Binding Band Structure Calculations with an Analytical Two-Band k·p Model: Conduction Band of Silicon"; Talk: International Conference Micro- and Nanoelectronics (ICMNE), Moscow-Zvenigorod; 2007-10-01 - 2007-10-05; in "International Conference "Micro and Nanoelectronics - 2007" Book of Abstracts", (2007), O1-14, . BibTeX
23.	V. Sverdlov, G. Karlowatz, E. Ungersböck, H. Kosina: "Inﬂuence of Uniaxial [110] Stress on the Silicon Conduction Band Structure: Stress Dependence of the Nonparabolicity Parameter"; Poster: T. Grasser, S. Selberherr (ed); International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 2007-09-25 - 2007-09-27; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2007), 12, ISBN: 978-3-211-72860-4, 329 - 332 doi:10.1007/978-3-211-72861-1_79. BibTeX
22.	V. Sverdlov: "Enhancing Performance of Modern MOSFETs: Strain Engineering and Advanced Device Architectures"; Talk: International Conference Frontiers of Josephson Physics and Nanoscience (FJPN07), Palinuro, Italy; 2007-09-23 - 2007-09-28; in "7^th International Conference Frontiers of Josephson Physics and Nanoscience", (2007), 63 - 64. BibTeX
21.	V. Sverdlov, H. Kosina, S. Selberherr: "Conduction Band in Silicon: Numerical Versus Analytical Two-Band k·p Model"; Talk: Conference of the Society for Electronics, Telecommunications, Automatics, and Informatics (ETAI), Ohrid, Macedonia; 2007-09-19 - 2007-09-21; in "8^th Conference of the Society for Electronics, Telecommunications, Automatics, and Informatics", (2007), 4 page(s) . BibTeX
20.	V. Sverdlov, E. Ungersböck, H. Kosina, S. Selberherr: "Effects of Shear Strain on the Conduction Band in Silicon: An Efficient Two-Band k.p Theory"; Talk: European Solid-State Device Research Conference (ESSDERC), München; 2007-09-11 - 2007-09-13; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2007), ISBN: 1-4244-1124-6, 386 - 389. BibTeX
19.	T. Grasser, W. Gös, V. Sverdlov, B. Kaczer: "The Universality of NBTI Relaxation and its Implications for Modeling and Characterization"; Talk: International Reliability Physics Symposium (IRPS), Phoenix; 2007-04-15 - 2007-04-19; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2007), ISBN: 1-4244-0919-5, 268 - 280. BibTeX
18.	V. Sverdlov, E. Ungersböck, H. Kosina: "Influence of Uniaxial [110] Stress on Silicon Band Structure and Electron Low-Field Mobility in Ultra-Thin Body SOIs"; Talk: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Leuven; 2007-01-24 - 2007-01-26; in "EUROSOI 2007", (2007), 39 - 40. BibTeX
17.	E. Ungersböck, V. Sverdlov, H. Kosina, S. Selberherr: "Low-Field Electron Mobility in Stressed UTB SOI MOSFETs for Different Substrate Orientations"; Talk: Meeting of the Electrochemical Society, SiGe and Germanium: Materials, Processing, and Devices, Cancun; 2006-10-29 - 2006-11-03; in "210^th ECS Meeting", (2006), ISSN: 1091-8213, 1 page(s) . BibTeX
16.	E. Ungersböck, V. Sverdlov, H. Kosina, S. Selberherr: "Strain Engineering for CMOS Devices"; Talk: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Shanghai; (invited) 2006-10-23 - 2006-10-26; in "2006 8^th International Conference on Solid-State and Integrated Circuit Technology Proceedings (Part 1 of 3)", (2006), ISBN: 1-4244-0160-7, 124 - 127. BibTeX
15.	V. Sverdlov, E. Ungersböck, H. Kosina: "Mobility Modeling in SOI FETs for Different Substrate Orientations and Strain Conditions"; NATO Advanced Research Workshop Nanoscaled Semiconductor-On-Insulator Structures and Devices, Sudak; 2006-10-15 - 2006-10-19; in "NATO Advanced Research Workshop Conference Abstracts", (2006), 77 - 78. BibTeX
14.	V. Sverdlov, E. Ungersböck, H. Kosina, S. Selberherr: "Orientation Dependence of the Low Field Mobility in Double- and Single-Gate SOI FETs"; Talk: European Solid-State Device Research Conference (ESSDERC), Montreux; 2006-09-18 - 2006-09-22; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2006), ISBN: 1-4244-0301-4, 178 - 181. BibTeX
13.	H. Kosina, V. Sverdlov, T. Grasser: "Wigner Monte Carlo Simulation: Particle Annihilation and Device Applications"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 2006-09-06 - 2006-09-08; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5, 357 - 360 doi:10.1109/SISPAD.2006.282908. BibTeX
12.	E. Ungersböck, V. Sverdlov, H. Kosina, S. Selberherr: "Electron Inversion Layer Mobility Enhancement by Uniaxial Stress on (001) and (110) Oriented MOSFETs"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 2006-09-06 - 2006-09-08; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5, 43 - 46 doi:10.1109/SISPAD.2006.282834. BibTeX
11.	E. Ungersböck, V. Sverdlov, H. Kosina, S. Selberherr: "Modeling of Advanced Semiconductor Devices"; Talk: Intl. Symposium on Microelectronics Technology and Devices (SBMicro), Ouro Preto; (invited) 2006-08-28 - 2006-09-01; in "ECS Transactions", (2006), ISBN: 1-56677-512-4, 207 - 216. BibTeX
10.	V. Sverdlov, E. Ungersböck, H. Kosina, S. Selberherr: "Comparative Study of Low-Field Mobilities in Double- and Single-Gate Ultra-Thin Body SOI for Different Substrate Orientations"; Talk: Silicon Nanoelectronics Workshop, Honolulu; 2006-06-11 - 2006-06-12; in "Abstracts IEEE 2006 Silicon Nanoelectronics Workshop", (2006), 17 - 18. BibTeX
9.	V. Sverdlov, T. Grasser, H. Kosina, S. Selberherr: "Scattering and Space-Charge Effects in Wigner Monte Carlo Simulations of Single and Double Barrier Devices"; Talk: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 2006-05-25 - 2006-05-27; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1, 29 - 30. BibTeX
8.	V. Sverdlov, H. Kosina, S. Selberherr: "Current Flow in Upcoming Microelectronic Devices"; Talk: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Playa del Carmen; (invited) 2006-04-26 - 2006-04-28; in "Proceedings International Caribbean Conference on Devices, Circuits and Systems", (2006), ISBN: 1-4244-0041-4, 3 - 8. BibTeX
7.	V. Sverdlov, E. Ungersböck, H. Kosina: "Mobility for High Effective Field in Double-Gate and Single-Gate SOI for Different Substrate Orientations"; Talk: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Grenoble; 2006-03-08 - 2006-03-10; in "EUROSOI 2006 Second Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits", (2006), 133 - 134. BibTeX
6.	V. Sverdlov, H. Kosina, S. Selberherr: "Current Transport in Nanoelectronic Semiconductor Devices"; Talk: IEEE Conference on Emerging Technologies - Nanoelectronics (NanoSingapore), Singapore; (invited) 2006-01-10 - 2006-01-13; in "Proceedings IEEE Conference on Emerging Technologies - Nanoelectronics", (2006), ISBN: 0-7803-9358-9, 490 - 495. BibTeX
5.	V. Sverdlov, H. Kosina, S. Selberherr: "Modeling Current Transport in Ultra-Scaled Field Effect Transistors"; Talk: Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong; (invited) 2005-12-19 - 2005-12-21; in "Proceedings of the 2005 IEEE Conference on Electron Devices and Solid-State Circuits", (2005), ISBN: 0-7803-9339-2, 385 - 390. BibTeX
4.	V. Sverdlov, A. Gehring, H. Kosina, S. Selberherr: "Tunneling and Intersubband Coupling in Ultra-Thin Body Double-Gate MOSFETs"; Talk: European Solid-State Device Research Conference (ESSDERC), Grenoble; 2005-09-12 - 2005-09-16; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2005), Cdrom Isbn: 0-7803-9204-3, ISBN: 0-7803-9203-5, 93 - 96. BibTeX
3.	H. Kosina, V. Sverdlov, Ch. Ringhofer, M. Nedjalkov, S. Selberherr: "Quantum Correction to the Semiclassical Electron-Phonon Scattering Operator"; Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 2005-06-06 - 2005-06-10; in "Abstracts of the 5th International Conference on Large-Scale Scientific Computations", (2005), 36 - 37. BibTeX
2.	V. Sverdlov: "Shot noise suppression and enhancement in 2D Shot Noise Suppression and Enhancement at 2D Hopping and Single-Electron Arrays"; Talk: International Conference on Unsolved Problems of Noise (UPON), Gallipoli; (invited) 2005-06-06 - 2005-06-10; in "4-th International Conference on Unsolved Problems of Noise and Fluctuations in Physics, Biology & High Technology", (2005), 177 - 182. BibTeX
1.	A. Gehring, V. Sverdlov, H. Kosina, S. Selberherr: "Quantum Transport in Ultra-Scaled Double-gate MOSFETs: A Wigner Function-based Monte Carlo Approach"; Talk: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Granada; 2005-01-19 - 2005-01-21; in "EUROSOI 2005 First Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits", (2005), 71 - 72. BibTeX

Talks and Poster Presentations (without Proceedings-Entry)

7.	J. Ender, R. Orio, S. Fiorentini, W. Goes, V. Sverdlov: "Large-Scale Finite Element Micromagnetics Simulations using Open Source Software"; Poster: European Materials Research Society (EMRS), Warsaw, Poland; 2019-09-16 - 2019-09-19; . BibTeX
6.	S. Fiorentini, R. Orio, W. Goes, J. Ender, V. Sverdlov: "Comprehensive Comparison of Switching Models for Perpendicular Spin Transfer Torque MRAM Cells"; Poster: European Materials Research Society (EMRS), Warsaw, Poland; 2019-09-16 - 2019-09-19; . BibTeX
5.	V. Sverdlov: "Magnetic Field Free Switching of a Perpendicular SOT MRAM Cell"; Talk: LETI Innovation days: Advanced Simulation for Non-Volatile Memory Workshop, Grenoble, France; (invited) 2019-06-28. BibTeX
4.	V. Sverdlov, D. Osintsev, S. Selberherr: "From Strained SOI MOSFET to Spin MOSFET with Strain: a Modeling Approach"; Talk: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Tarragona, Spain; (invited) 2014-01-27 - 2014-01-29; . BibTeX
3.	H. Kosina, V. Sverdlov: "Impact of Strain and Defects on CMOS Process and Device Performance"; Talk: 15^thBiannual Conference Insulating Films on Semiconductors (INFOS-2007), Glyfada Athens, Greece; (invited) 2007-06-20 - 2007-06-23; . BibTeX
2.	Y. Kinkhabwala, V. Sverdlov, K. Likharev: "Quasi-continuous Charge Transfer via 2D Hopping"; Talk: APS March Meeting, Los Angeles; 2005-03-21 - 2005-03-25; . BibTeX
1.	V. Sverdlov, H. Kosina, Ch. Ringhofer, M Nedjalkov, S. Selberherr: "Beyond the Golden Rule in Electron-Phonon Scattering: an Advanced Monte Carlo Algorithm"; Talk: DFG Workshop on Multiscale Problems in Quantum Mechanics and Averaging Techniques, Garching; 2004-11-04 - 2004-11-05; . BibTeX

Habilitation Theses

1.	V. Sverdlov: "Strain-Induced Effects in Advanced MOSFETs"; TU Wien, Fakultät für Elektrotechnik und Informationstechnik, (2010), . BibTeX

Doctor's Theses (authored and supervised)

4.	J. Ghosh: "Modeling Spin-Dependent Transport in Silicon"; Reviewer: V. Sverdlov, M. Bescond; Institut für Mikroelektronik, 2016, oral examination: 2016-03-03. BibTeX
3.	D. Osintsev: "Modeling Spintronic Effects in Silicon"; Reviewer: V. Sverdlov, D. Süss; Institut für Mikroelektronik, 2014, oral examination: 2014-05-28 doi:10.34726/hss.2014.24842. BibTeX
2.	H. Mahmoudi: "Devices and Circuits for Stateful Logic and Memristive Sensing Applications"; Reviewer: V. Sverdlov, B. Meinerzhagen; Institut für Mikroelektronik, 2014, oral examination: 2014-04-28 doi:10.34726/hss.2014.24465. BibTeX
1.	A. Makarov: "Modeling of Emerging Resistive Switching Based Memory Cells"; Reviewer: V. Sverdlov, S. Cristoloveanu; Institut für Mikroelektronik, 2014, oral examination: 2014-03-18 doi:10.34726/hss.2014.23875. BibTeX

Scientific Reports

3.	H. Ceric, Ph. Hehenberger, G. Milovanovic, V. Sverdlov, M. Vasicek, S. Selberherr: "VISTA Status Report June 2009"; (2009), 30 page(s) . BibTeX
2.	O. Baumgartner, W. Gös, A. Nentchev, F. Stimpfl, V. Sverdlov, S. Selberherr: "VISTA Status Report December 2007"; (2007), 32 page(s) . BibTeX
1.	S. Dhar, L. Li, M. Pourfath, M. Spevak, V. Sverdlov, S. Selberherr: "VISTA Status Report June 2006"; (2006), 32 page(s) . BibTeX

Patents

4.	H. Mahmoudi, S. Selberherr, V. Sverdlov, T. Windbacher: "Spin Torque Magnetic Integrated Circuit"; Patent: International, No. WO 2014/154497 A1 ; Patent priority number EP 13161375.4; submitted: 2014-03-13, granted: 2014-10-02. BibTeX
3.	H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr: "RRAM Implication Logic Gates"; Patent: International, No. WO 2014/079747 A1 ; Patent priority number EP 12193826.0; submitted: 2013-11-13, granted: 2014-05-30. BibTeX
2.	T. Windbacher, V. Sverdlov, S. Selberherr, H. Mahmoudi: "Spin Torque Magnetic Integrated Circuit"; Patent: Europe, No. EP 2784 020 A1 ; submitted: 2013-03-27, granted: 2014-10-01. BibTeX
1.	H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr: "RRAM Implication Logic Gates"; Patent: Europe, No. EP 2 736 044 A1 ; submitted: 2012-11-22, granted: 2014-05-28. BibTeX