Publications Alexander Toifl

19 records

Publications in Scientific Journals

5.  C. Lenz, A. Toifl, M. Quell, F. Rodrigues, A. Hössinger, J. Weinbub:
"Curvature Based Feature Detection for Hierarchical Grid Refinement in TCAD Topography Simulations";
Solid-State Electronics (invited), 191 (2022), 108258-1 - 108258-8. https://doi.org/10.1016/j.sse.2022.108258

4.  A. Toifl, F. Rodrigues, L.F. Aguinsky, A. Hössinger, J. Weinbub:
"Continuum Level-Set Model for Anisotropic Wet Etching of Patterned Sapphire Substrates";
Semiconductor Science and Technology, 36 (2021), 4; 045016-1 - 045016-12. https://doi.org/10.1088/1361-6641/abe49b

3.  A. Toifl, M. Quell, X. Klemenschits, P. Manstetten, A. Hössinger, S. Selberherr, J. Weinbub:
"The Level-Set Method for Multi-Material Wet Etching and Non-Planar Selective Epitaxy";
IEEE Access, 8 (2020), 115406 - 115422. https://doi.org/10.1109/ACCESS.2020.3004136

2.  A. Toifl, V. Simonka, A. Hössinger, S. Selberherr, T. Grasser, J. Weinbub:
"Simulation of the Effects of Postimplantation Annealing on Silicon Carbide DMOSFET Characteristics";
IEEE Transactions on Electron Devices, 66 (2019), 7; 3060 - 3065. https://doi.org/10.1109/TED.2019.2916929

1.  V. Simonka, A. Toifl, A. Hössinger, S. Selberherr, J. Weinbub:
"Transient Model for Electrical Activation of Aluminium and Phosphorus-Implanted Silicon Carbide";
Journal of Applied Physics, 123 (2018), 23; 235701-1 - 235701-7. https://doi.org/10.1063/1.5031185

Contributions to Books

2.  C. Lenz, A. Toifl, A. Hössinger, J. Weinbub:
"Curvature Based Feature Detection for Hierarchical Grid Refinement in TCAD Topography Simulations";
in: "Proceedings of the 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", B. Cretu (ed.); IEEE, 2021, 1 - 4. https://doi.org/10.1109/EuroSOI-ULIS53016.2021.9560690

1.  L.F. Aguinsky, G. Wachter, F. Rodrigues, A. Scharinger, A. Toifl, M. Trupke, U. Schmid, A. Hössinger, J. Weinbub:
"Feature-Scale Modeling of Low-Bias SF6 Plasma Etching of Si";
in: "Proceedings of the 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", B. Cretu (ed.); IEEE, 2021, 1 - 4. https://doi.org/10.1109/EuroSOI-ULIS53016.2021.9560685

Talks and Poster Presentations (with Proceedings-Entry)

10.  C. Lenz, A. Toifl, A. Hössinger, J. Weinbub:
"Curvature-Based Feature Detection for Hierarchical Grid Refinement in Epitaxial Growth Simulations";
Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France; 2021-09-01 - 2021-09-03; in: "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2021), 109 - 110.

9.  F. Rodrigues, L.F. Aguinsky, A. Toifl, A. Hössinger, J. Weinbub:
"Feature Scale Modeling of Fluorocarbon Plasma Etching for Via Structures including Faceting Phenomena";
Talk: International Workshop on Computational Nanotechnology (IWCN), Daejeon, Korea (Virtual); 2021-05-24 - 2021-06-06; in: "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2021), ISBN: 978-89-89453-30-7; 101 - 102.

8.  L.F. Aguinsky, G. Wachter, A. Scharinger, F. Rodrigues, A. Toifl, M. Trupke, U. Schmid, A. Hössinger, J. Weinbub:
"Feature-Scale Modeling of Isotropic SF6 Plasma Etching of Si";
Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France; 2021-09-01 - 2021-09-03; in: "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2021), 54 - 55.

7.  F. Rodrigues, L.F. Aguinsky, A. Toifl, A. Scharinger, A. Hössinger, J. Weinbub:
"Surface Reaction and Topography Modeling of Fluorocarbon Plasma Etching";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Dallas, Texas (USA); 2021-09-27 - 2021-09-29; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2021), 229 - 232. https://doi.org/10.1109/SISPAD54002.2021.9592583

6.  A. Toifl:
"Physical Process TCAD: Victory Process´ Crystal Anisotropy Engine";
Talk: Silvaco Users Global Event (SURGE), Santa Clara, CA, USA - virtual (invited); 2020-10-20; in: "Proceedings of the Silvaco Users Global Event (SURGE)", (2020), 1.

5.  P. Manstetten, G. Diamantopoulos, L. Gnam, L.F. Aguinsky, M. Quell, A. Toifl, A. Scharinger, A. Hössinger, M. Ballicchia, M. Nedjalkov, J. Weinbub:
"High Performance TCAD: From Simulating Fabrication Processes to Wigner Quantum Transport";
Talk: Workshop on High Performance TCAD (WHPTCAD), Chicago, IL, USA; 2019-05-24 - 2019-05-25; in: "Book of Abstracts of the Workshop on High Performance TCAD (WHPTCAD)", (2019), 13.

4.  A. Toifl, M. Quell, A. Hössinger, A. Babayan, S. Selberherr, J. Weinbub:
"Novel Numerical Dissipation Scheme for Level-Set Based Anisotropic Etching Simulations";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy; 2019-09-04 - 2019-09-06; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2019), ISBN: 978-1-7281-0938-1; 327 - 330. https://doi.org/10.1109/SISPAD.2019.8870443

3.  M. Quell, A. Toifl, A. Hössinger, S. Selberherr, J. Weinbub:
"Parallelized Level-Set Velocity Extension Algorithm for Nanopatterning Applications";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy; 2019-09-04 - 2019-09-06; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2019), ISBN: 978-1-7281-0938-1; 335 - 338. https://doi.org/10.1109/SISPAD.2019.8870482

2.  G. Diamantopoulos, P. Manstetten, L. Gnam, V. Simonka, L.F. Aguinsky, M. Quell, A. Toifl, A. Hössinger, J. Weinbub:
"Recent Advances in High Performance Process TCAD";
Talk: SIAM Conference on Computational Science and Engineering, Spokane, WA, USA; 2019-02-25 - 2019-03-01; in: "CSE19 Abstracts", (2019), 335.

1.  A. Toifl, V. Simonka, A. Hössinger, S. Selberherr, J. Weinbub:
"Steady-State Empirical Model for Electrical Activation of Silicon-Implanted Gallium Nitride";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, Texas, USA; 2018-09-24 - 2018-09-26; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2018), ISBN: 978-1-5386-6788-0; 336 - 339. https://doi.org/10.1109/SISPAD.2018.8551728

Doctor's Theses (authored and supervised)

1.  A. Toifl:
"Numerical Methods for Three-Dimensional Selective Epitaxy and Anisotropic Wet Etching Simulations";
Supervisor, Reviewer: J. Weinbub, U. Schmid, L.-T. Cheng; Institut für Mikroelektronik, 2021; oral examination: 2021-08-19. https://doi.org/10.34726/hss.2021.91744

Diploma and Master Theses (authored and supervised)

1.  A. Toifl:
"Modeling and Simulation of Thermal Annealing of Implanted GaN and SiC";
Supervisor: E. Langer, J. Weinbub; Institut für Mikroelektronik, 2018; final examination: 2018-06-15.