Publications Alexander Toifl
11 records
| 4. | A. Toifl, F. Rodrigues, L.F. Aguinsky, A. Hössinger, J. Weinbub: "Continuum Level-Set Model for Anisotropic Wet Etching of Patterned Sapphire Substrates"; Semiconductor Science and Technology, 36, (2021), 045016-1 - 045016-12 doi:10.1088/1361-6641/abe49b. BibTeX |
| 3. | A. Toifl, M. Quell, X. Klemenschits, P. Manstetten, A. Hössinger, S. Selberherr, J. Weinbub: "The Level-Set Method for Multi-Material Wet Etching and Non-Planar Selective Epitaxy"; IEEE Access, 8, (2020), 115406 - 115422 doi:10.1109/ACCESS.2020.3004136. BibTeX |
| 2. | A. Toifl, V. Simonka, A. Hössinger, S. Selberherr, T. Grasser, J. Weinbub: "Simulation of the Effects of Postimplantation Annealing on Silicon Carbide DMOSFET Characteristics"; IEEE Transactions on Electron Devices, 66, (2019), 3060 - 3065 doi:10.1109/TED.2019.2916929. BibTeX |
| 1. | V. Simonka, A. Toifl, A. Hössinger, S. Selberherr, J. Weinbub: "Transient Model for Electrical Activation of Aluminium and Phosphorus-Implanted Silicon Carbide"; Journal of Applied Physics, 123, (2018), 235701-1 - 235701-7 doi:10.1063/1.5031185. BibTeX |
| 6. | A. Toifl: "Physical Process TCAD: Victory Process´ Crystal Anisotropy Engine"; Talk: Silvaco Users Global Event (SURGE), Santa Clara, CA, USA - virtual; (invited) 2020-10-20 in "Proceedings of the Silvaco Users Global Event (SURGE)", (2020), 1. BibTeX |
| 5. | M. Quell, A. Toifl, A. Hössinger, S. Selberherr, J. Weinbub: "Parallelized Level-Set Velocity Extension Algorithm for Nanopatterning Applications"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy; 2019-09-04 - 2019-09-06; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2019), ISBN: 978-1-7281-0938-1, 335 - 338 doi:10.1109/SISPAD.2019.8870482. BibTeX |
| 4. | A. Toifl, M. Quell, A. Hössinger, A. Babayan, S. Selberherr, J. Weinbub: "Novel Numerical Dissipation Scheme for Level-Set Based Anisotropic Etching Simulations"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy; 2019-09-04 - 2019-09-06; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2019), ISBN: 978-1-7281-0938-1, 327 - 330 doi:10.1109/SISPAD.2019.8870443. BibTeX |
| 3. | P. Manstetten, G. Diamantopoulos, L. Gnam, L.F. Aguinsky, M. Quell, A. Toifl, A. Scharinger, A. Hössinger, M. Ballicchia, M. Nedjalkov, J. Weinbub: "High Performance TCAD: From Simulating Fabrication Processes to Wigner Quantum Transport"; Talk: Workshop on High Performance TCAD (WHPTCAD), Chicago, IL, USA; 2019-05-24 - 2019-05-25; in "Book of Abstracts of the Workshop on High Performance TCAD (WHPTCAD)", (2019), 13. BibTeX |
| 2. | G. Diamantopoulos, P. Manstetten, L. Gnam, V. Simonka, L.F. Aguinsky, M. Quell, A. Toifl, A. Hössinger, J. Weinbub: "Recent Advances in High Performance Process TCAD"; Talk: SIAM Conference on Computational Science and Engineering, Spokane, WA, USA; 2019-02-25 - 2019-03-01; in "CSE19 Abstracts", (2019), 335. BibTeX |
| 1. | A. Toifl, V. Simonka, A. Hössinger, S. Selberherr, J. Weinbub: "Steady-State Empirical Model for Electrical Activation of Silicon-Implanted Gallium Nitride"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, Texas, USA; 2018-09-24 - 2018-09-26; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2018), ISBN: 978-1-5386-6788-0, 336 - 339 doi:10.1109/SISPAD.2018.8551728. BibTeX |
| 1. | A. Toifl: "Modeling and Simulation of Thermal Annealing of Implanted GaN and SiC"; Supervisor: E. Langer, J. Weinbub; Institut für Mikroelektronik, 2018, final examination: 2018-06-15. BibTeX |