Staff Person Publications
  •  Intranet
t3kitt3kitt3kit
  • Home
  • TeachingOpen
    • Lectures
    • Bachelor Theses
    • Master Theses
    • Dissertations
  • ResearchOpen
    • Activities
    • Computing Infrastructure
    • Characterization Lab
    • Annual Reviews
    • Public Projects
    • Conferences
  • PublicationsOpen
    • Books and Book Editorships
    • Papers in Journals
    • Contributions to Books
    • Conference Presentations
    • Scientific Reports
    • Patents
    • Habilitation Theses
    • PhD Theses
    • Master's Theses
  • SoftwareOpen
    • Software
    • Download
    • License Agreement
  • StaffOpen
    • Active Staff
    • Former Staff
  • About UsOpen
    • Contact Us
    • Join Us
    • Partners
    • Imprint
    • Corporate Design
    • Sitemap
  • News

Publications Alexander Toifl

19 records


Publications in Scientific Journals


5. C. Lenz, A. Toifl, M. Quell, F. Rodrigues, A. Hössinger, J. Weinbub:
"Curvature Based Feature Detection for Hierarchical Grid Refinement in TCAD Topography Simulations";
Solid-State Electronics, 191, (invited) (2022), 108258-1 - 108258-8 doi:10.1016/j.sse.2022.108258. BibTeX

4. A. Toifl, F. Rodrigues, L.F. Aguinsky, A. Hössinger, J. Weinbub:
"Continuum Level-Set Model for Anisotropic Wet Etching of Patterned Sapphire Substrates";
Semiconductor Science and Technology, 36, (2021), 045016-1 - 045016-12 doi:10.1088/1361-6641/abe49b. BibTeX

3. A. Toifl, M. Quell, X. Klemenschits, P. Manstetten, A. Hössinger, S. Selberherr, J. Weinbub:
"The Level-Set Method for Multi-Material Wet Etching and Non-Planar Selective Epitaxy";
IEEE Access, 8, (2020), 115406 - 115422 doi:10.1109/ACCESS.2020.3004136. BibTeX

2. A. Toifl, V. Simonka, A. Hössinger, S. Selberherr, T. Grasser, J. Weinbub:
"Simulation of the Effects of Postimplantation Annealing on Silicon Carbide DMOSFET Characteristics";
IEEE Transactions on Electron Devices, 66, (2019), 3060 - 3065 doi:10.1109/TED.2019.2916929. BibTeX

1. V. Simonka, A. Toifl, A. Hössinger, S. Selberherr, J. Weinbub:
"Transient Model for Electrical Activation of Aluminium and Phosphorus-Implanted Silicon Carbide";
Journal of Applied Physics, 123, (2018), 235701-1 - 235701-7 doi:10.1063/1.5031185. BibTeX


Contributions to Books


2. L.F. Aguinsky, G. Wachter, F. Rodrigues, A. Scharinger, A. Toifl, M. Trupke, U. Schmid, A. Hössinger, J. Weinbub:
"Feature-Scale Modeling of Low-Bias SF6 Plasma Etching of Si";
in "Proceedings of the 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", B. Cretu (ed); IEEE, 2021, 1 - 4 doi:10.1109/EuroSOI-ULIS53016.2021.9560685. BibTeX

1. C. Lenz, A. Toifl, A. Hössinger, J. Weinbub:
"Curvature Based Feature Detection for Hierarchical Grid Refinement in TCAD Topography Simulations";
in "Proceedings of the 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", B. Cretu (ed); IEEE, 2021, 1 - 4 doi:10.1109/EuroSOI-ULIS53016.2021.9560690. BibTeX


Talks and Poster Presentations (with Proceedings-Entry)


10. F. Rodrigues, L.F. Aguinsky, A. Toifl, A. Scharinger, A. Hössinger, J. Weinbub:
"Surface Reaction and Topography Modeling of Fluorocarbon Plasma Etching";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Dallas, Texas (USA); 2021-09-27 - 2021-09-29; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2021), 229 - 232 doi:10.1109/SISPAD54002.2021.9592583. BibTeX

9. L.F. Aguinsky, G. Wachter, A. Scharinger, F. Rodrigues, A. Toifl, M. Trupke, U. Schmid, A. Hössinger, J. Weinbub:
"Feature-Scale Modeling of Isotropic SF6 Plasma Etching of Si";
Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France; 2021-09-01 - 2021-09-03; in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2021), 54 - 55. BibTeX

8. C. Lenz, A. Toifl, A. Hössinger, J. Weinbub:
"Curvature-Based Feature Detection for Hierarchical Grid Refinement in Epitaxial Growth Simulations";
Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Caen, France; 2021-09-01 - 2021-09-03; in "Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2021), 109 - 110. BibTeX

7. F. Rodrigues, L.F. Aguinsky, A. Toifl, A. Hössinger, J. Weinbub:
"Feature Scale Modeling of Fluorocarbon Plasma Etching for Via Structures including Faceting Phenomena";
Talk: International Workshop on Computational Nanotechnology (IWCN), Daejeon, Korea (Virtual); 2021-05-24 - 2021-06-06; in "Book of Abstracts of the International Workshop on Computational Nanotechnology (IWCN)", (2021), ISBN: 978-89-89453-30-7, 101 - 102. BibTeX

6. A. Toifl:
"Physical Process TCAD: Victory Process´ Crystal Anisotropy Engine";
Talk: Silvaco Users Global Event (SURGE), Santa Clara, CA, USA - virtual; (invited) 2020-10-20 in "Proceedings of the Silvaco Users Global Event (SURGE)", (2020), 1. BibTeX

5. M. Quell, A. Toifl, A. Hössinger, S. Selberherr, J. Weinbub:
"Parallelized Level-Set Velocity Extension Algorithm for Nanopatterning Applications";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy; 2019-09-04 - 2019-09-06; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2019), ISBN: 978-1-7281-0938-1, 335 - 338 doi:10.1109/SISPAD.2019.8870482. BibTeX

4. A. Toifl, M. Quell, A. Hössinger, A. Babayan, S. Selberherr, J. Weinbub:
"Novel Numerical Dissipation Scheme for Level-Set Based Anisotropic Etching Simulations";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy; 2019-09-04 - 2019-09-06; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2019), ISBN: 978-1-7281-0938-1, 327 - 330 doi:10.1109/SISPAD.2019.8870443. BibTeX

3. P. Manstetten, G. Diamantopoulos, L. Gnam, L.F. Aguinsky, M. Quell, A. Toifl, A. Scharinger, A. Hössinger, M. Ballicchia, M. Nedjalkov, J. Weinbub:
"High Performance TCAD: From Simulating Fabrication Processes to Wigner Quantum Transport";
Talk: Workshop on High Performance TCAD (WHPTCAD), Chicago, IL, USA; 2019-05-24 - 2019-05-25; in "Book of Abstracts of the Workshop on High Performance TCAD (WHPTCAD)", (2019), 13. BibTeX

2. G. Diamantopoulos, P. Manstetten, L. Gnam, V. Simonka, L.F. Aguinsky, M. Quell, A. Toifl, A. Hössinger, J. Weinbub:
"Recent Advances in High Performance Process TCAD";
Talk: SIAM Conference on Computational Science and Engineering, Spokane, WA, USA; 2019-02-25 - 2019-03-01; in "CSE19 Abstracts", (2019), 335. BibTeX

1. A. Toifl, V. Simonka, A. Hössinger, S. Selberherr, J. Weinbub:
"Steady-State Empirical Model for Electrical Activation of Silicon-Implanted Gallium Nitride";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, Texas, USA; 2018-09-24 - 2018-09-26; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2018), ISBN: 978-1-5386-6788-0, 336 - 339 doi:10.1109/SISPAD.2018.8551728. BibTeX


Doctor's Theses (authored and supervised)


1. A. Toifl:
"Numerical Methods for Three-Dimensional Selective Epitaxy and Anisotropic Wet Etching Simulations";
Reviewer: J. Weinbub, U. Schmid, L.-T. Cheng; Institut für Mikroelektronik, 2021, oral examination: 2021-08-19 doi:10.34726/hss.2021.91744. BibTeX


Diploma and Master Theses (authored and supervised)


1. A. Toifl:
"Modeling and Simulation of Thermal Annealing of Implanted GaN and SiC";
Supervisor: E. Langer, J. Weinbub; Institut für Mikroelektronik, 2018, final examination: 2018-06-15. BibTeX

  • Active Staff
  • Former Staff

Institute for Microelectronics
Head: Univ. Prof. Dipl.-Ing. Dr. techn. Tibor Grasser
Deputy Head: O. Univ. Prof. Dipl.-Ing. Dr. techn. Dr.h.c. Siegfried Selberherr
Contact Us    |    Join Us    |    Imprint
© E360 - Institute for Microelectronics 2018