Publications Oliver Triebl
26 records
| 4. | T. Windbacher, O. Triebl, D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr: "Simulation Study of an Electrically Read- and Writable Magnetic Logic Gate"; Microelectronic Engineering, 112, (2013), 188 - 192 doi:10.1016/j.mee.2012.12.030. BibTeX |
| 3. | S. E. Tyaginov, I. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser: "Interface Traps Density-of-States as a Vital Component for Hot-Carrier Degradation Modeling"; Microelectronics Reliability, 50, (2010), 1267 - 1272 doi:10.1016/j.microrel.2010.0. BibTeX |
| 2. | R. Entner, T. Grasser, O. Triebl, H. Enichlmair, R. Minixhofer: "Negative Bias Temperature Instability Modeling for High-Voltage Oxides at Different Stress Temperatures"; Microelectronics Reliability, 47, (2007), 697 - 699. BibTeX |
| 1. | O. Triebl, T. Grasser: "Vector Discretization Schemes in Technology CAD Environments"; Romanian Journal of Information Science and Technology, 10, (2007), 167 - 176. BibTeX |
| 2. | O. Triebl, T. Grasser: "Numerical Power/HV Device Modeling"; in "Power/HV MOS Devices Compact Modeling", W. Grabinski, T. Gneiting (ed); Springer Netherlands, (invited) 2010, ISBN: 978-90-481-3045-0, 1 - 32 doi:10.1007/978-90-481-3046-7_1. BibTeX |
| 1. | M. Wagner, G. Span, S. Holzer, V. Palankovski, O. Triebl, T. Grasser: "Power Output Improvement of Silicon-Germanium Thermoelectric Generators"; in "SiGe and Ge: Materials, Processing, and Devices, Vol. 3, No. 7", issued by The Electrochemical Society; ECS Transactions, 2006, ISBN: 1-56677-507-8, 1151 - 1162 doi:10.1149/1.2355909. BibTeX |
| 16. | S. E. Tyaginov, M. Bina, J. Franco, D. Osintsev, O. Triebl, B. Kaczer, T. Grasser: "Physical Modeling of Hot-Carrier Degradation for Short- and Long-channel MOSFETs"; Poster: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 2014-06-01 - 2014-06-05; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2014), ISBN: 978-1-4799-3317-4, XT16.1 - XT16.8. BibTeX |
| 15. | T. Windbacher, O. Triebl, D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr: "Switching Optimization of an Electrically Read- and Writable Magnetic Logic Gate"; Talk: International Workshop on Computational Electronics (IWCE), Nara, Japan; 2013-06-04 - 2013-06-07; in "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2013), ISBN: 978-3-901578-26-7, 238 - 239. BibTeX |
| 14. | M. Bina, K. Rupp, S. E. Tyaginov, O. Triebl, T. Grasser: "Modeling of Hot Carrier Degradation Using a Spherical Harmonics Expansion of the Bipolar Boltzmann Transport Equation"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 2012-12-10 - 2012-12-12; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2012), 713 - 716 doi:10.1109/IEDM.2012.6479138. BibTeX |
| 13. | M. Bina, O. Triebl, B. Schwarz, M. Karner, B. Kaczer, T. Grasser: "Simulation of Reliability on Nanoscale Devices"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, CO, USA; 2012-09-05 - 2012-09-07; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2012), ISBN: 978-0-615-71756-2, 109 - 112. BibTeX |
| 12. | S. E. Tyaginov, I. Starkov, O. Triebl, M. Karner, C. Kernstock, C. Jungemann, H. Enichlmair, J.M. Park, T. Grasser: "Impact of Gate Oxide Thickness Variations on Hot-Carrier Degradation"; Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2012-07-02 - 2012-07-06; in "Proceedings of the 19th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2012), ISBN: 978-1-4673-0980-6, 1 - 5 doi:10.1109/IPFA.2012.6306265. BibTeX |
| 11. | S. E. Tyaginov, I. Starkov, O. Triebl, H. Ceric, T. Grasser, H. Enichlmair, J.M. Park, C. Jungemann: "Secondary Generated Holes as a Crucial Component for Modeling of HC Degradation in High-Voltage n-MOSFET"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 123 - 126 doi:10.1109/SISPAD.2011.6035065. BibTeX |
| 10. | S. E. Tyaginov, I. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser: "Interface Traps Density-of-States as a Vital Component for Hot-Carrier Degradation Modeling"; Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Montecassino Abbey and Gaeta; 2010-10-11 - 2010-10-15; in "Proceedings of the 21st European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2010), 3 page(s) . BibTeX |
| 9. | I. Starkov, S. E. Tyaginov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser: "Analysis of Worst-Case Hot-Carrier Conditions for High Voltage Transistors Based on Full-Band Monte-Carlo Simulations"; Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2010-07-05 - 2010-07-09; in "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9, 139 - 144. BibTeX |
| 8. | S. E. Tyaginov, I. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser: "Hot-Carrier Degradation Modeling Using Full-Band Monte-Carlo Simulations"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2010-07-05 - 2010-07-09; in "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9, 341 - 345. BibTeX |
| 7. | I. Starkov, S. E. Tyaginov, H. Enichlmair, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Ceric, T. Grasser: "HC Degradation Model: Interface State Profile-Simulations vs. Experiment"; Poster: Workshop on Dielectrics in Microelectronics (WODIM), Bratislava; 2010-06-28 - 2010-06-30; in "Book of Abstracts", (2010), 128. BibTeX |
| 6. | Ph. Hehenberger, T. Aichinger, T. Grasser, W. Gös, O. Triebl, B. Kaczer, M. Nelhiebel: "Do NBTI-Induced Interface States Show Fast Recovery? A Study Using a Corrected On-The-Fly Charge-Pumping Measurement Technique"; Poster: International Reliability Physics Symposium (IRPS), Montreal; 2009-04-26 - 2009-04-30; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2009), 1033 - 1038. BibTeX |
| 5. | H. Kosina, O. Triebl, T. Grasser: "Box Method for the Convection-Diffusion Equation Based on Exponential Shape Functions"; Poster: T. Grasser, S. Selberherr (ed); International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 2007-09-25 - 2007-09-27; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2007), 12, ISBN: 978-3-211-72860-4, 317 - 320 doi:10.1007/978-3-211-72861-1_76. BibTeX |
| 4. | O. Triebl, T. Grasser: "Investigation of Vector Discretization Schemes for Box Volume Methods"; Talk: The Nanotechnology Conference and Trade Show, Santa Clara; 2007-05-20 - 2007-05-24; in "NSTI Nanotech Proceedings", (2007), 3, ISBN: 1-4200-6184-4, 61 - 64. BibTeX |
| 3. | M. Wagner, G. Span, S. Holzer, O. Triebl, T. Grasser: "Power Output Improvement of SiGe Thermoelectric Generators"; Talk: Meeting of the Electrochemical Society (ECS), Cancun; 2006-10-29 - 2006-11-03; in "Meeting Abstracts 2006 Joint International Meeting", (2006), ISSN: 1091-8213, 1 page(s) . BibTeX |
| 2. | O. Triebl, T. Grasser: "Vector Discretization Schemes Based on Unstructured Neighbourhood Information"; Talk: International Semiconductor Conference CAS, Sinaia; 2006-09-27 - 2006-09-29; in "CAS 2006 Proceedings Vol. 2", (2006), ISBN: 1-4244-0109-7, 337 - 340. BibTeX |
| 1. | T. Grasser, R. Entner, O. Triebl, H. Enichlmair: "TCAD Modeling of Negative Bias Temperature Instability"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey, CA, USA; 2006-09-06 - 2006-09-08; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2006), ISBN: 1-4244-0404-5, 330 - 333 doi:10.1109/SISPAD.2006.282902. BibTeX |
| 1. | O. Triebl: "Reliability Issues in High Voltage Semiconductor Devices"; Reviewer: T. Grasser, M. Gröschl; Institut für Mikroelektronik, 2012, oral examination: 2012-10-24. BibTeX |
| 1. | O. Triebl: "Verfolgen von teilweise verdeckten Kanten mit Hilfe von Suchlinien"; Supervisor: M. Vincze; Institut für Automatisierungs- und Regelungstechnik, 2005, . BibTeX |
| 2. | T. Grasser, M. Karner, C. Kernstock, H. Kosina, O. Triebl: "Customized Software Development Report"; (2010), 22 page(s) . BibTeX |
| 1. | T. Grasser, W. Gös, O. Triebl, Ph. Hehenberger, P.-J. Wagner, P. Schwaha, R. Heinzl, S. Holzer, R. Entner, S. Wagner, F. Schanovsky: "3 Year Report 2005-2007"; (2007), 34 page(s) . BibTeX |