Staff Person Publications

Publications Oliver Triebl

26 records

Publications in Scientific Journals

4.		Windbacher, T., Triebl, O., Osintsev, D., Makarov, A., Sverdlov, V., Selberherr, S. (2013). Simulation Study of an Electrically Read- And Writable Magnetic Logic Gate. Microelectronic Engineering, 112, 188–192. https://doi.org/10.1016/j.mee.2012.12.030 (reposiTUm)

3.		Tyaginov, S. E., Starkov, I., Triebl, O., Cervenka, J., Jungemann, C., Carniello, S., Park, J. M., Enichlmair, H., Karner, M., Kernstock, C., Seebacher, E., Minixhofer, R., Ceric, H., Grasser, T. (2010). Interface Traps Density-Of-States as a Vital Component for Hot-Carrier Degradation Modeling. Microelectronics Reliability, 50, 1267–1272. (reposiTUm)

2.		Entner, R., Grasser, T., Triebl, O., Enichlmair, H., Minixhofer, R. (2007). Negative Bias Temperature Instability Modeling for High-Voltage Oxides at Different Stress Temperatures. Microelectronics Reliability, 47(4–5), 697–699. (reposiTUm)

1.		Triebl, O., Grasser, T. (2007). Vector Discretization Schemes in Technology CAD Environments. Romanian Journal of Information Science and Technology, 10(2), 167–176. (reposiTUm)

Contributions to Books

2.		Triebl, O., Grasser, T. (2010). Numerical Power/Hv Device Modeling. In W. Grabinski, T. Gneiting (Eds.), POWER/HVMOS Devices Compact Modeling (pp. 1–31). Springer Netherlands. https://doi.org/10.1007/978-90-481-3046-7_1 (reposiTUm)

1.		Wagner, M., Span, G., Holzer, S., Palankovski, V., Triebl, O., Grasser, T. (2006). Power Output Improvement of Silicon-Germanium Thermoelectric Generators. In ECS Transactions (pp. 1151–1162). ECS Transactions. https://doi.org/10.1149/1.2355909 (reposiTUm)

Talks and Poster Presentations (with Proceedings-Entry)

16.		Tyaginov, S., Bina, M., Franco, J., Osintsev, D., Triebl, O., Kaczer, B., Grasser, T. (2014). Physical Modeling of Hot-Carrier Degradation for Short- And Long-Channel MOSFETs. In Proceedings of the International Reliability Physics Symposium (IRPS) (pp. XT16.1–XT16.8), Phoenix. (reposiTUm)

15.		Windbacher, T., Triebl, O., Osintsev, D., Makarov, A., Sverdlov, V., Selberherr, S. (2013). Switching Optimization of an Electrically Read- And Writable Magnetic Logic Gate. In Book of Abstracts of the International Workshop on Computational Electronics (IWCE) (pp. 238–239), Urbana-Champaign, IL, USA. (reposiTUm)

14.		Tyaginov, S., Starkov, I., Triebl, O., Karner, M., Kernstock, C., Jungemann, C., Enichlmair, H., Park, J., Grasser, T. (2012). Impact of Gate Oxide Thickness Variations on Hot-Carrier Degradation. In 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, Singapore. https://doi.org/10.1109/ipfa.2012.6306265 (reposiTUm)

13.		Bina, M., Rupp, K., Tyaginov, S., Triebl, O., Grasser, T. (2012). Modeling of Hot Carrier Degradation Using a Spherical Harmonics Expansion of the Bipolar Boltzmann Transport Equation. In 2012 International Electron Devices Meeting, San Francisco, CA, USA. https://doi.org/10.1109/iedm.2012.6479138 (reposiTUm)

12.		Bina, M., Triebl, O., Schwarz, B., Karner, M., Kaczer, B., Grasser, T. (2012). Simulation of Reliability on Nanoscale Devices. In 2012 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 109–112), Denver, Colorado, United States. (reposiTUm)

11.		Tyaginov, S., Starkov, I., Triebl, O., Ceric, H., Grasser, T., Enichlmair, H., Park, J., Jungemann, C. (2011). Secondary Generated Holes as a Crucial Component for Modeling of HC Degradation in High-Voltage N-Mosfet. In 2011 International Conference on Simulation of Semiconductor Processes and Devices, Osaka, Japan. https://doi.org/10.1109/sispad.2011.6035065 (reposiTUm)

10.		Starkov, I., Tyaginov, S., Triebl, O., Cervenka, J., Jungemann, C., Carniello, S., Park, J., Enichlmair, H., Karner, M., Kernstock, C., Seebacher, E., Minixhofer, R., Ceric, H., Grasser, T. (2010). Analysis of Worst-Case Hot-Carrier Conditions for High Voltage Transistors Based on Full-Band Monte-Carlo Simulations. In Proceedings of the 17^th International Symposium on the Physical, Failure Analysis of Integrated Circuits (pp. 139–144), Singapore. (reposiTUm)

9.		Starkov, I., Tyaginov, S., Enichlmair, H., Triebl, O., Cervenka, J., Jungemann, C., Carniello, S., Park, J., Ceric, H., Grasser, T. (2010). HC Degradation Model: Interface State Profile-Simulations vs. Experiment. In Book of Abstracts (p. 128), Catania. (reposiTUm)

8.		Tyaginov, S., Starkov, I., Triebl, O., Cervenka, J., Jungemann, C., Carniello, S., Park, J., Enichlmair, H., Karner, M., Kernstock, C., Seebacher, E., Minixhofer, R., Ceric, H., Grasser, T. (2010). Hot-Carrier Degradation Modeling Using Full-Band Monte-Carlo Simulations. In Proceedings of the 17^th International Symposium on the Physical, Failure Analysis of Integrated Circuits (pp. 341–345), Singapore. (reposiTUm)

7.		Tyaginov, S., Starkov, I., Triebl, O., Cervenka, J., Jungemann, C., Carniello, S., Park, J., Enichlmair, H., Karner, M., Kernstock, C., Seebacher, E., Minixhofer, R., Ceric, H., Grasser, T. (2010). Interface Traps Density-Of-States as a Vital Component for Hot-Carrier Degradation Modeling. In Proceedings of the 21^st European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis (p. 3), Maastricht. (reposiTUm)

6.		Hehenberger, P., Aichinger, T., Grasser, T., Gös, W., Triebl, O., Kaczer, B., Nelhiebel, M. (2009). Do NBTI-Induced Interface States Show Fast Recovery? A Study Using a Corrected On-The-Fly Charge-Pumping Measurement Technique. In Proceedings of the IEEE International Reliability Physics Symposium (IRPS) (pp. 1033–1038), Phoenix. (reposiTUm)

5.		Kosina, H., Triebl, O., Grasser, T. (2007). Box Method for the Convection-Diffusion Equation Based on Exponential Shape Functions. In Simulation of Semiconductor Processes and Devices 2007 (pp. 317–320), Vienna, Austria. https://doi.org/10.1007/978-3-211-72861-1_76 (reposiTUm)

4.		Triebl, O., Grasser, T. (2007). Investigation of Vector Discretization Schemes for Box Volume Methods. In NSTI Nanotech Proceedings (pp. 61–64), Anaheim, Austria. (reposiTUm)

3.		Wagner, M., Span, G., Holzer, S., Triebl, O., Grasser, T. (2006). Power Output Improvement of SiGe Thermoelectric Generators. In Meeting Abstracts 2006 Joint International Meeting (p. 1), Honolulu, Austria. (reposiTUm)

2.		Triebl, O., Enichlmair, H. (2006). TCAD Modeling of Negative Bias Temperature Instability. In 2006 International Conference on Simulation of Semiconductor Processes and Devices, Monterey, California, United States. https://doi.org/10.1109/sispad.2006.282902 (reposiTUm)

1.		Triebl, O., Grasser, T. (2006). Vector Discretization Schemes Based on Unstructured Neighbourhood Information. In CAS 2006 Proceedings Vol. 2 (pp. 337–340), Sinaia. (reposiTUm)

Doctor's Theses (authored and supervised)

1.		Triebl, O. (2012). Reliability Issues in High-Voltage Semiconductor Devices Technische Universität Wien. https://doi.org/10.34726/hss.2012.27576 (reposiTUm)

Diploma and Master Theses (authored and supervised)

1.		Triebl, O. (2005). Verfolgen Von Teilweise Verdeckten Kanten Mit Hilfe Von Suchlinien Technische Universität Wien. (reposiTUm)

Scientific Reports

2.		Grasser, T., Karner, M., Kernstock, C., Kosina, H., Triebl, O. (2010). Customized Software Development Report. (reposiTUm)

1.		Grasser, T., Gös, W., Triebl, O., Hehenberger, P. P., Wagner, P.-J., Schwaha, P., Heinzl, R., Holzer, S., Entner, R., Wagner, S., Schanovsky, F. (2007). 3 Year Report 2005-2007. (reposiTUm)