Publications Konstantinos Tselios
5 records
4. | M. Waltl, T. Knobloch, K. Tselios, L. Filipovic, B. Stampfer, Y. Hernandez, D. Waldhör, Y. Illarionov, B. Kaczer, T. Grasser: "Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology?"; Advanced Materials, n/a, (invited) (2022), 2201082-1 - 2201082-23 doi:10.1002/adma.202201082. BibTeX |
3. | K. Tselios, D. Waldhör, B. Stampfer, J. Michl, E. Ioannidis, H. Enichlmair, T. Grasser, M. Waltl: "On the Distribution of Single Defect Threshold Voltage Shifts in SiON Transistors"; IEEE Transactions on Device and Materials Reliability, 91, (invited) (2021), 199 - 206 doi:10.1109/TDMR.2021.3080983. BibTeX |
2. | D. Waldhör, C. Schleich, J. Michl, B. Stampfer, K. Tselios, E. Ioannidis, H. Enichlmair, M. Waltl, T. Grasser: "Toward Automated Defect Extraction From Bias Temperature Instability Measurements"; IEEE Transactions on Electron Devices, 68, (2021), 4057 - 4063 doi:10.1109/TED.2021.3091966. BibTeX |
1. | M. Waltl, D. Waldhör, K. Tselios, B. Stampfer, C. Schleich, G. Rzepa, H. Enichlmair, E. Ioannidis, R. Minixhofer, T. Grasser: "Impact of Single-Defects on the Variability of CMOS Inverter Circuits"; Microelectronics Reliability, 126, (2021), 114275-1 - 114275-6 doi:10.1016/j.microrel.2021.114275. BibTeX |
1. | K. Tselios, B. Stampfer, J. Michl, E. Ioannidis, H. Enichlmair, M. Waltl: "Distribution of Step Heights of Electron and Hole Traps in SiON nMOS Transistors"; Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA - virtual; 2020-10-04 - 2020-10-08; in "Proceedings of the International Integrated Reliability Workshop (IIRW)", (2020), 1 - 6 doi:10.1109/IIRW49815.2020.9312871. BibTeX |