Publications S. Tyaginov
100 records
| 36. | M. Jech, A.-M. El-Sayed, S. E. Tyaginov, D. Waldhör, F. Bouakline, P. Saalfrank, D. Jabs, C. Jungemann, M. Waltl, T. Grasser: "Quantum Chemistry Treatment of Silicon-Hydrogen Bond Rupture by Nonequilibrium Carriers in Semiconductor Devices"; Physical Review Applied, 16, (2021), 014026 -1 - 014026 -24 doi:10.1103/PhysRevApplied.16.014026. BibTeX |
| 35. | M. Jech, G.A. Rott, H. Reisinger, S. Tyaginov, G. Rzepa, A. Grill, D. Jabs, C. Jungemann, M. Waltl, T. Grasser: "Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full {VG, VD} Bias Space: Implications and Peculiarities"; IEEE Transactions on Electron Devices, 67, (2020), 3315 - 3322 doi:10.1109/TED.2020.3000749. BibTeX |
| 34. | A. Makarov, Ph. Roussel, E. Bury, M. Vandemaele, A. Spessot, D. Linten, B. Kaczer, S. E. Tyaginov: "Correlated Time-0 and Hot-Carrier Stress Induced FinFET Parameter Variabilities: Modeling Approach"; Micromachines, 11, (2020), 675 doi:10.3390/mi11070657. BibTeX |
| 33. | M. Jech, A.-M. El-Sayed, S. E. Tyaginov, A. Shluger, T. Grasser: "Ab Initio Treatment of Silicon-Hydrogen Bond Rupture at Si/SiO2 Interfaces"; Physical Review B, 100, (2019), 195302 doi:10.1103/PhysRevB.100.195302. BibTeX |
| 32. | M. Jech, B. Ullmann, G. Rzepa, S. E. Tyaginov, A. Grill, M. Waltl, D. Jabs, C. Jungemann, T. Grasser: "Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part II: Theory"; IEEE Transactions on Electron Devices, 66, (2019), 241 - 248 doi:10.1109/TED.2018.2873421. BibTeX |
| 31. | A. Makarov, B. Kaczer, A. Chasin, M. Vandemaele, E. Bury, M. Jech, A. Grill, G. Hellings, A.-M. El-Sayed, T. Grasser, D. Linten, S. E. Tyaginov: "Bi-Modal Variability of nFinFET Characteristics During Hot-Carrier Stress: A Modeling Approach"; IEEE Electron Device Letters, 40, (2019), 1579 - 1582 doi:10.1109/LED.2019.2933729. BibTeX |
| 30. | A. Makarov, B. Kaczer, Ph. Roussel, A. Chasin, A. Grill, M. Vandemaele, G. Hellings, A.-M. El-Sayed, T. Grasser, D. Linten, S. E. Tyaginov: "Stochastic Modeling of the Impact of Random Dopants on Hot-Carrier Degradation in n-FinFETs"; IEEE Electron Device Letters, 40, (2019), 870 - 873 doi:10.1109/LED.2019.2913625. BibTeX |
| 29. | A. Makarov, S. E. Tyaginov, B. Kaczer, M. Jech, A. Chasin, A. Grill, G. Hellings, M. I. Vexler, D. Linten, T. Grasser: "Analysis of the Features of Hot-Carrier Degradation in FinFETs"; Semiconductors (Physics of Semiconductor Devices), 52, (2018), 1177 - 1182 doi:10.1134/S1063782618100081. BibTeX |
| 28. | S. E. Tyaginov, A. Makarov, M. Jech, M. I. Vexler, J. Franco, B. Kaczer, T. Grasser: "Physical Principles of Self-Consistent Simulation of the Generation of Interface States and the Transport of Hot Charge Carriers in Field-Effect Transistors Based on Metal-Oxide-Semiconductor Structures"; Semiconductors (Physics of Semiconductor Devices), 52, (2018), 242 - 247 doi:10.1134/S1063782618020203. BibTeX |
| 27. | S. E. Tyaginov, A. Makarov, B. Kaczer, M. Jech, A. Chasin, A. Grill, G. Hellings, M. I. Vexler, D. Linten, T. Grasser: "Impact of the Device Geometric Parameters on Hot-Carrier Degradation in FinFETs"; Semiconductors (Physics of Semiconductor Devices), 52, (2018), 1738 - 1742 doi:10.1134/S1063782618130183. BibTeX |
| 26. | B. Kaczer, J. Franco, S. E. Tyaginov, M. Jech, G. Rzepa, T. Grasser, B.J. O´Sullivan, R. Ritzenhaler, T. Schram, A. Spessot, D. Linten, N. Horiguchi: "Mapping of CMOS FET Degradation in Bias Space--Application to Dram Peripheral Devices"; Journal of Vacuum Science & Technology B, 35, (2017), 01A109-1 - 01A109-6 doi:10.1116/1.4972872. BibTeX |
| 25. | P. Sharma, S. E. Tyaginov, S. E. Rauch, J. Franco, A. Makarov, M. I. Vexler, B. Kaczer, T. Grasser: "Hot-Carrier Degradation Modeling of Decananometer nMOSFETs Using the Drift-Diffusion Approach"; IEEE Electron Device Letters, 38, (2017), 160 - 163 doi:10.1109/LED.2016.2645901. BibTeX |
| 24. | M. Jech, P. Sharma, S. E. Tyaginov, F. Rudolf, T. Grasser: "On the Limits of Applicability of Drift-Diffusion Based Hot Carrier Degradation Modeling"; Japanese Journal of Applied Physics, 55, (2016), 1 - 6 doi:10.7567/JJAP.55.04ED14. BibTeX |
| 23. | P. Sharma, S. E. Tyaginov, M. Jech, Y. Wimmer, F. Rudolf, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser: "The Role of Cold Carriers and the Multiple-Carrier Process of Si-H Bond Dissociation for Hot-Carrier Degradation in n- and p-channel LDMOS Devices"; Solid-State Electronics, 115, (2016), 185 - 191 doi:10.1016/j.sse.2015.08.014. BibTeX |
| 22. | S. E. Tyaginov, M. Jech, J. Franco, P. Sharma, B. Kaczer, T. Grasser: "Understanding and Modeling the Temperature Behavior of Hot-Carrier Degradation in SiON n-MOSFETs"; IEEE Electron Device Letters, 37, (2016), 84 - 87 doi:10.1109/LED.2015.2503920. BibTeX |
| 21. | Yu. Illarionov, M. Bina, S. E. Tyaginov, K. Rott, B. Kaczer, H. Reisinger, T. Grasser: "Extraction of the Lateral Position of Border Traps in Nanoscale MOSFETs"; IEEE Transactions on Electron Devices, 62, (2015), 2730 - 2737 doi:10.1109/TED.2015.2454433. BibTeX |
| 20. | Yu. Illarionov, M. I. Vexler, M. Karner, S. E. Tyaginov, J. Cervenka, T. Grasser: "TCAD Simulation of Tunneling Leakage Current in CaF2/Si(111) MIS Structures"; Current Applied Physics, 15, (2015), 78 - 83 doi:10.1016/j.cap.2014.10.015. BibTeX |
| 19. | P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, K. Rupp, M. Bina, H. Enichlmair, J.M. Park, R. Minixhofer, H. Ceric, T. Grasser: "Modeling of Hot-Carrier Degradation in nLDMOS Devices: Different Approaches to the Solution of the Boltzmann Transport Equation"; IEEE Transactions on Electron Devices, 62, (2015), 1811 - 1818 doi:10.1109/TED.2015.2421282. BibTeX |
| 18. | P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, K. Rupp, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser: "Comparison of Analytic Distribution Function Models for Hot-Carrier Degradation in nLDMOSFETs"; Microelectronics Reliability, 55, (2015), 1427 - 1432 doi:10.1016/j.microrel.2015.06.021. BibTeX |
| 17. | S. E. Tyaginov, M. Bina, J. Franco, Y. Wimmer, B. Kaczer, T. Grasser: "On the Importance of Electron-Electron Scattering for Hot-Carrier Degradation"; Japanese Journal of Applied Physics, 54, (2015), 1 - 6 doi:10.7567/JJAP.54.04DC18. BibTeX |
| 16. | M. I. Vexler, Yu. Illarionov, S. E. Tyaginov, T. Grasser: "Adaptation of the Model of Tunneling in a Metal/CaF2/Si(111) System for Use in Industrial Simulators of MIS Devices"; Semiconductors (Physics of Semiconductor Devices), 49, (2015), 259 - 263 doi:10.1134/S1063782615020207. BibTeX |
| 15. | M. Bina, S. E. Tyaginov, J. Franco, K. Rupp, Y. Wimmer, D. Osintsev, B. Kaczer, T. Grasser: "Predictive Hot-Carrier Modeling of n-Channel MOSFETs"; IEEE Transactions on Electron Devices, 61, (2014), 3103 - 3110 doi:10.1109/TED.2014.2340575. BibTeX |
| 14. | Yu. Illarionov, M. Bina, S. E. Tyaginov, T. Grasser: "An Analytical Approach for the Determination of the Lateral Trap Position in Ultra-Scaled MOSFETs"; Japanese Journal of Applied Physics, 53, (2014), 04EC22-1 - 04EC22-4 doi:10.7567/JJAP.53.04EC22. BibTeX |
| 13. | S. E. Tyaginov, Yu. Illarionov, M. I. Vexler, M. Bina, J. Cervenka, J. Franco, B. Kaczer, T. Grasser: "Modeling of Deep-Submicron Silicon-Based MISFETs with Calcium Fluoride Dielectric"; Journal of Computational Electronics, 13, (2014), 733 - 738 doi:10.1007/s10825-014-0593-9. BibTeX |
| 12. | S. E. Tyaginov, Y. Wimmer, T. Grasser: "Modeling of Hot-Carrier Degradation Based on Thorough Carrier Transport Treatment"; Facta Universitatis, 27, (invited) (2014), 479 - 508 doi:10.2298/FUEE1404479T. BibTeX |
| 11. | G. Pobegen, S. E. Tyaginov, M. Nelhiebel, T. Grasser: "Observation of Normally Distributed Energies for Interface Trap Recovery After Hot-Carrier Degradation"; IEEE Electron Device Letters, 34, (2013), 939 - 941 doi:10.1109/LED.2013.2262521. BibTeX |
| 10. | M. I. Vexler, S. E. Tyaginov, Yu. Illarionov, Y. K. Sing, A. D. Shenp, V. V. Fedorov, D. V. Isakov: "A General Simulation Procedure for the Electrical Characteristics of Metal Insulator Semiconductor Tunnel Structures"; Semiconductors (Physics of Semiconductor Devices), 47, (2013), 686 - 694 doi:10.1134/S1063782613050230. BibTeX |
| 9. | I. Starkov, S. E. Tyaginov, H. Enichlmair, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Ceric, T. Grasser: "Hot-Carrier Degradation Caused Interface State Profile-Simulation versus Experiment"; Journal of Vacuum Science & Technology B, 29, (2011), 01AB09-1 - 01AB09-8 doi:10.1116/1.3534021. BibTeX |
| 8. | I. Starkov, S. E. Tyaginov, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser: "Accurate Extraction of MOSFET Unstressed Interface State Spatial Distribution from Charge Pumping Measurements"; Solid State Phenomena, 178-179, (2011), 267 - 272 doi:10.4028/www.scientific.net/SSP.178-179.267. BibTeX |
| 7. | S. E. Tyaginov, I. Starkov, H. Enichlmair, C. Jungemann, J.M. Park, E. Seebacher, R. Orio, H. Ceric, T. Grasser: "An Analytical Approach for Physical Modeling of Hot-Carrier Induced Degradation"; Microelectronics Reliability, 51, (2011), 1525 - 1529 doi:10.1016/j.microrel.2011.07.089. BibTeX |
| 6. | S. E. Tyaginov, I. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser: "Interface Traps Density-of-States as a Vital Component for Hot-Carrier Degradation Modeling"; Microelectronics Reliability, 50, (2010), 1267 - 1272 doi:10.1016/j.microrel.2010.0. BibTeX |
| 5. | S. E. Tyaginov, M. Vexler, A. El Hdiy, K. Gacem, V Zaporojtchenko: "Electrical Methods for Estimating the Correlation Length of Insulator Thickness Fluctuations in MIS Tunnel Structures"; Materials Science in Semiconductor Processing, 13, (2010), 405 - 410 doi:10.1016/j.mssp.2011.07.003. BibTeX |
| 4. | S. E. Tyaginov, V. Sverdlov, I. Starkov, W. Gös, T. Grasser: "Impact of O-Si-O Bond Angle Fluctuations on the Si-O Bond-Breakage Rate"; Microelectronics Reliability, 49, (2009), 998 - 1002 doi:10.1016/j.microrel.2009.06.018. BibTeX |
| 3. | S. E. Tyaginov, M. Vexler, N. S. Sokolov, S. M. Suturin, A. Banshchikov, T. Grasser, B. Meinerzhagen: "Determination of Correlation Length for Thickness Fluctuations in Thin Oxide and Fluoride Films"; Journal of Physics D: Applied Physics, 42, (2009), 1 - 6 doi:10.1088/0022-3727/42/11/115307. BibTeX |
| 2. | M. Vexler, N. S. Sokolov, S. M. Suturin, A. Banshchikov, S. E. Tyaginov, T. Grasser: "Electrical Characterization and Modeling of the Au/CaF2/nSi(111) Sructures with High-Quality Tunnel-Thin Fluoride Layer"; Journal of Applied Physics, 105, (2009), 1 - 6 doi:10.1063/1.3110066. BibTeX |
| 1. | P.D. Yoder, M. Vexler, A. Shulekin, N. Asli, S. Gastev, I. Grekhov, P. Seegebrecht, S. Tyaginov, H. Zimmermann: "Luminescence spectra of an Al/SiO2/p-Si tunnel metal-oxide-semiconductor structure"; Journal of Applied Physics, vol. 98, (2005), 083511-1 - 083511-12. BibTeX |
| 2. | S. E. Tyaginov: "Physics-Based Modeling of Hot-Carrier Degradation"; in "Hot Carrier Degradation in Semiconductor Devices", T. Grasser (ed); Springer International Publishing, 2015, ISBN: 978-3-319-08993-5, 105 - 150 doi:10.1007/978-3-319-08994-2_4. BibTeX |
| 1. | S. E. Tyaginov, I. Starkov, H. Enichlmair, J.M. Park, C. Jungemann, T. Grasser: "Physics-Based Hot-Carrier Degradation Models"; in "Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11", R. Sah (ed); ECS Transactions, 2011, ISBN: 978-1-56677-865-7, 321 - 352 doi:10.1149/1.3572292. BibTeX |
| 62. | A. Vasilev, M. Jech, A. Grill, G. Rzepa, C. Schleich, A. Makarov, G. Pobegen, T. Grasser, M. Waltl, S. E. Tyaginov: "Modeling the Hysteresis of Current-Voltage Characteristics in 4H-SiC Transistors"; Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA - virtual; 2020-10-04 - 2020-10-08; in "Proceedings of the International Integrated Reliability Workshop (IIRW)", (2020), 1 - 4 doi:10.1109/IIRW49815.2020.9312864. BibTeX |
| 61. | A. Grill, E. Bury, J. Michl, S. Tyaginov, D. Linten, T. Grasser, B. Parvais, B. Kaczer, M. Waltl, I. Radu: "Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures"; Talk: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 2020-04-28 - 2020-04-30; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), ISBN: 978-1-7281-3199-3, 1 - 6 doi:10.1109/IRPS45951.2020.9128316. BibTeX |
| 60. | S. Tyaginov, A. Grill, M. Vandemaele, T. Grasser, G. Hellings, A. Makarov, M. Jech, D. Linten, B. Kaczer: "A Compact Physics Analytical Model for Hot-Carrier Degradation"; Talk: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 2020-04-28 in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), ISBN: 978-1-7281-3199-3, 1 - 7 doi:10.1109/IRPS45951.2020.9128327. BibTeX |
| 59. | M. Jech, S. Tyaginov, B. Kaczer, J. Franco, D. Jabs, C. Jungemann, M. Waltl, T. Grasser: "First-Principles Parameter-Free Modeling of n- and p-FET Hot-Carrier Degradation"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco , USA; 2019-12-07 - 2019-12-11; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2019), doi:10.1109/IEDM19573.2019.8993630. BibTeX |
| 58. | C. Schleich, J. Berens, G. Rzepa, G. Pobegen, G. Rescher, S. E. Tyaginov, T. Grasser, M. Waltl: "Physical Modeling of Bias Temperature Instabilities in SiC MOSFETs"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, USA; 2019-12-07 - 2019-12-11; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2019), doi:10.1109/IEDM19573.2019.8993446. BibTeX |
| 57. | S. Tyaginov, A. El-Sayed, A. Makarov, A. Chasin, H. Arimura, M. Vandemaele, M. Jech, E. Capogreco, L. Witters, A. Grill, A. De Keersgieter, G. Eneman, D. Linten, B. Kaczer: "Understanding and Physical Modeling Superior Hot-Carrier Reliability of Ge pNWFETs"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 2019-12-07 - 2019-12-11; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2019), ISBN: 978-1-7281-4032-2, 498 - 501 doi:10.1109/IEDM19573.2019.8993644. BibTeX |
| 56. | A. Makarov, Ph. Roussel, E. Bury, M. Vandemaele, A. Spessot, D. Linten, B. Kaczer, S. E. Tyaginov: "On Correlation Between Hot-Carrier Stress Induced Device Parameter Degradation and Time-Zero Variability"; Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, USA; 2019-10-13 - 2019-10-17; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2019), ISBN: 978-1-7281-2203-8, doi:10.1109/IIRW47491.2019.8989882. BibTeX |
| 55. | J. Scharlotta, G. Bersuker, S. E. Tyaginov, C. Young, G. Haase, G. Rzepa, M. Waltl, T. Chohan, S. Iyer, A. Kotov, C. Zambelli, F. Guarin, F. M. Puglisi, C. Ostermaier: "IIRW 2019 Discussion Group II: Reliability for Aerospace Applications"; Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2019-10-13 - 2019-10-17; in "Proceedings of the International Integrated Reliability Workshop (IIRW)", (2019), 1 - 4 doi:10.1109/IIRW47491.2019.8989910. BibTeX |
| 54. | A. Makarov, B. Kaczer, Ph. Roussel, A. Chasin, M. Vandemaele, G. Hellings, A.-M. El-Sayed, M. Jech, T. Grasser, D. Linten, S. E. Tyaginov: "Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants"; Talk: European Solid-State Device Research Conference (ESSDERC), Krakow, Poland; 2019-09-23 - 2019-09-26; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2019), ISBN: 978-1-7281-1539-9, 262 - 265 doi:10.1109/ESSDERC.2019.8901721. BibTeX |
| 53. | A. Makarov, B. Kaczer, Ph. Roussel, A. Chasin, M. Vandemaele, G. Hellings, A.-M. El-Sayed, M. Jech, T. Grasser, D. Linten, S. E. Tyaginov: "Simulation Study: the Effect of Random Dopants and Random Traps on Hot-Carrier Degradation in nFinFETs"; Talk: International Conference on Solid State Devices and Materials (SSDM), Nagoya, Japan; 2019-09-02 - 2019-09-05; in "Extended Abstracts of the International Conference on Solid State Devices and Materials (SSDM)", (2019), 609 - 610. BibTeX |
| 52. | S. E. Tyaginov, A. Chasin, A. Makarov, A.-M. El-Sayed, M. Jech, A. De Keersgieter, G. Eneman, M. Vandemaele, J. Franco, D. Linten, B. Kaczer: "Physics-based Modeling of Hot-Carrier Degradation in Ge NWFETs"; Talk: International Conference on Solid State Devices and Materials (SSDM), Nagoya, Japan; 2019-09-02 - 2019-09-05; in "Extended Abstracts of the International Conference on Solid State Devices and Materials (SSDM)", (2019), 565 - 566. BibTeX |
| 51. | A. Makarov, B. Kaczer, Ph. Roussel, A. Chasin, A. Grill, M. Vandemaele, G. Hellings, A.-M. El-Sayed, T. Grasser, D. Linten, S. E. Tyaginov: "Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs"; Talk: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2019-03-31 - 2019-04-04; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2019), ISBN: 978-1-5386-9504-3, doi:10.1109/IRPS.2019.8720584. BibTeX |
| 50. | M. Vandemaele, B. Kaczer, S. E. Tyaginov, Z. Stanojevic, A. Makarov, A. Chasin, E. Bury, H. Mertens, D. Linten, G Groeseneken: "Full (Vg, Vd) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs"; Talk: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2019-03-31 - 2019-04-04; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2019), ISBN: 978-1-5386-9504-3, 1 - 7 doi:10.1109/IRPS.2019.8720406. BibTeX |
| 49. | S. E. Tyaginov, M. Jech, G. Rzepa, A. Grill, A.-M. El-Sayed, G. Pobegen, A. Makarov, T. Grasser: "Border Trap Based Modeling of SiC Transistor Transfer Characteristics"; Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2018-10-07 - 2018-10-11; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2018), ISBN: 978-1-5386-6039-3, doi:10.1109/IIRW.2018.8727083. BibTeX |
| 48. | M. Vandemaele, B. Kaczer, Z. Stanojevic, S. E. Tyaginov, A. Makarov, A. Chasin, H. Mertens, D. Linten, G Groeseneken: "Distribution Function Based Simulations of Hot-Carrier Degradation in Nanowire FETs"; Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2018-10-07 - 2018-10-11; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2018), ISBN: 978-1-5386-6039-3, doi:10.1109/IIRW.2018.8727081. BibTeX |
| 47. | A. Makarov, S. E. Tyaginov, B. Kaczer, M. Jech, A. Chasin, A. Grill, G. Hellings, M. Vexler, D. Linten, T. Grasser: "Hot-Carrier Degradation in FinFETs: Modeling, Peculiarities, and Impact of Device Topology"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 2017-12-02 - 2017-12-06; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2017), ISBN: 978-1-5386-3559-9, 310 - 313 doi:10.1109/IEDM.2017.8268381. BibTeX |
| 46. | B. Ullmann, M. Jech, S. E. Tyaginov, M. Waltl, Yu. Illarionov, A. Grill, K. Puschkarsky, H. Reisinger, T. Grasser: "The Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on Single Oxide Defects"; Poster: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2017-04-04 - 2017-04-06; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6642-1, XT-10.1 - XT-10.6 doi:10.1109/IRPS.2017.7936424. BibTeX |
| 45. | S. E. Tyaginov, A. Makarov, M. Jech, J. Franco, P. Sharma, B. Kaczer, T. Grasser: "On the Effect of Interface Traps on the Carrier Distribution Function During Hot-Carrier Degradation"; Poster: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2016-10-09 - 2016-10-13; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2016), ISBN: 978-1-5090-4193-0, 95 - 98 doi:10.1109/IIRW.2016.7904911. BibTeX |
| 44. | P. Sharma, S. E. Tyaginov, S. E. Rauch, J. Franco, B. Kaczer, A. Makarov, M. Vexler, T. Grasser: "A Drift-Diffusion-Based Analytic Description of the Energy Distribution Function for Hot-Carrier Degradation in Decananometer nMOSFETs"; Talk: European Solid-State Device Research Conference (ESSDERC), Lausanne, Switzerland; 2016-09-12 - 2016-09-15; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2016), ISBN: 978-1-5090-2969-3, 428 - 431 doi:10.1109/ESSDERC.2016.7599677. BibTeX |
| 43. | S. E. Tyaginov, M. Jech, P. Sharma, J. Franco, B. Kaczer, T. Grasser: "On the Temperature Behavior of Hot-Carrier Degradation"; Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2015-10-11 - 2015-10-15; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2015), 143 - 146 doi:10.1109/IIRW.2015.7437088. BibTeX |
| 42. | P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, K. Rupp, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser: "Comparison of Analytic Distribution Function Models for Hot-Carrier Degradation in nLDMOSFETs"; Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Toulouse, France; 2015-10-05 - 2015-10-09; in "Abstracts of the 26th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis", (2015), 60. BibTeX |
| 41. | P. Sharma, M. Jech, S. E. Tyaginov, F. Rudolf, K. Rupp, H. Enichlmair, J.M. Park, T. Grasser: "Modeling of Hot-Carrier Degradation in LDMOS Devices Using a Drift-Diffusion Based Approach"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 2015-09-09 - 2015-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7858-1, 60 - 63 doi:10.1109/SISPAD.2015.7292258. BibTeX |
| 40. | P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, K. Rupp, M. Bina, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser: "Predictive and Efficient Modeling of Hot-Carrier Degradation in nLDMOS Devices"; Talk: IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), Hong Kong, China; 2015-05-10 - 2015-05-14; in "Proceedings of the IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)", (2015), ISBN: 978-1-4799-6259-4, 389 - 392 doi:10.1109/ISPSD.2015.7123471. BibTeX |
| 39. | B. Kaczer, J. Franco, M. Cho, T. Grasser, P. Roussel, S. E. Tyaginov, M. Bina, Y. Wimmer, L. M. Procel, L. Trojman, F. Crupi, G. Pitner, V. Putcha, P. Weckx, E. Bury, Z. Ji, A. De Keersgieter, T. Chiarella, N. Horiguchi, G Groeseneken, A. Thean: "Origins and Implications of Increased Channel Hot Carrier Variability in nFinFETs"; Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2015-04-19 - 2015-04-23; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2015), 6 page(s) doi:10.1109/IRPS.2015.7112706. BibTeX |
| 38. | P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser: "A Model for Hot-Carrier Degradation in nLDMOS Transistors Based on the Exact Solution of the Boltzmann Transport Equation Versus the Drift-Diffusion Scheme"; Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Bologna, Italy; 2015-01-26 - 2015-01-28; in "Proceedings of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", (2015), 21 - 24 doi:10.1109/ULIS.2015.7063763. BibTeX |
| 37. | S. E. Tyaginov, M. Bina, J. Franco, Y. Wimmer, F. Rudolf, H. Enichlmair, J.M. Park, B. Kaczer, H. Ceric, T. Grasser: "Dominant Mechanism of Hot-Carrier Degradation in Short- and Long-Channel Transistors"; Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2014-10-12 - 2014-10-16; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2014), ISBN: 978-1-4799-7308-8, 63 - 68 doi:10.1109/IIRW.2014.7049512. BibTeX |
| 36. | Y. Wimmer, S. E. Tyaginov, F. Rudolf, K. Rupp, M. Bina, H. Enichlmair, J.M. Park, R. Minixhofer, H. Ceric, T. Grasser: "Physical Modeling of Hot-Carrier Degradation in nLDMOS Transistors"; Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2014-10-12 - 2014-10-16; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2014), ISBN: 978-1-4799-7308-8, 58 - 62 doi:10.1109/IIRW.2014.7049511. BibTeX |
| 35. | S. E. Tyaginov, M. Bina, J. Franco, Y. Wimmer, D. Osintsev, B. Kaczer, T. Grasser: "A Predictive Physical Model for Hot-Carrier Degradation in Ultra-Scaled MOSFETs"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 2014-09-09 - 2014-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4, 89 - 92 doi:10.1109/SISPAD.2014.6931570. BibTeX |
| 34. | S. E. Tyaginov, M. Bina, J. Franco, B. Kaczer, T. Grasser: "On the Importance of Electron-electron Scattering for Hot-carrier Degradation"; Talk: International Conference on Solid State Devices and Materials (SSDM), Tsukuba, Japan; 2014-09-08 - 2014-09-11; in "Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials (SSDM)", (2014), 858 - 859. BibTeX |
| 33. | M. Vexler, Yu. Illarionov, S. E. Tyaginov, N. S. Sokolov, V. V. Fedorov, T. Grasser: "Simulation of the Electrical Characteristics of the Devices with Thin Calcium Fluoride Films on Silicon-(111) Using MINIMOS-NT"; Talk: DIELECTRICS-2014, St-Petersburg, Russia; 2014-06-02 - 2014-06-06; in "Materials of XIII International conference DIELECTRICS", (2014), 159 - 162. BibTeX |
| 32. | Yu. Illarionov, M. Bina, S. E. Tyaginov, K. Rott, H. Reisinger, B. Kaczer, T. Grasser: "A Reliable Method for the Extraction of the Lateral Position of Defects in Ultra-scaled MOSFETs"; Poster: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 2014-06-01 - 2014-06-05; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2014), ISBN: 978-1-4799-3317-4, XT13.1 - XT13.6. BibTeX |
| 31. | S. E. Tyaginov, M. Bina, J. Franco, D. Osintsev, O. Triebl, B. Kaczer, T. Grasser: "Physical Modeling of Hot-Carrier Degradation for Short- and Long-channel MOSFETs"; Poster: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 2014-06-01 - 2014-06-05; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2014), ISBN: 978-1-4799-3317-4, XT16.1 - XT16.8. BibTeX |
| 30. | G.A. Rott, H. Nielen, H. Reisinger, W. Gustin, S. E. Tyaginov, T. Grasser: "Drift Compensating Effect during Hot-Carrier Degradation of 130nm Dual Gate Oxide p-channel Transistors"; Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 2013-10-13 - 2013-10-17; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2013), ISBN: 978-1-4799-0350-4, 73 - 77. BibTeX |
| 29. | S. E. Tyaginov, M. Bina, J. Franco, D. Osintsev, Y. Wimmer, B. Kaczer, T. Grasser: "Essential Ingredients for Modeling of Hot-Carrier Degradation in Ultra-Scaled MOSFETs"; Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 2013-10-13 - 2013-10-17; in "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2013), ISBN: 978-1-4799-0350-4, 98 - 101. BibTeX |
| 28. | Yu. Illarionov, S. E. Tyaginov, M. Bina, T. Grasser: "A method to determine the lateral trap position in ultra-scaled MOSFETs"; Talk: Solid State Devices and Materials Conference (SSDM), Fukuoka, Japan; 2013-09-24 - 2013-09-27; in "Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials(SSDM)", (2013), ISBN: 978-4-86348-362-0, 728 - 729. BibTeX |
| 27. | S. E. Tyaginov, D. Osintsev, Yu. Illarionov, J.M. Park, H. Enichlmair, M. I. Vexler, T. Grasser: "Tunnelling of strongly non-equilibrium carriers in the transistors of traditional configuration"; Poster: XI Russian Conference on Semiconductor Physics, St-Petersburg, Russia; 2013-09-16 - 2013-09-20; in "Abstracts of XI Russian Conference on Semiconductor Physics", (2013), ISBN: 978-5-93634-033-3, 441. BibTeX |
| 26. | M. Bina, K. Rupp, S. E. Tyaginov, O. Triebl, T. Grasser: "Modeling of Hot Carrier Degradation Using a Spherical Harmonics Expansion of the Bipolar Boltzmann Transport Equation"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 2012-12-10 - 2012-12-12; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2012), 713 - 716 doi:10.1109/IEDM.2012.6479138. BibTeX |
| 25. | S. E. Tyaginov, T. Grasser: "Modeling of Hot-Carrier Degradation: Physics and Controversial Issues"; Talk: IEEE International Integrated Reliability Workshop, California; 2012-10-14 - 2012-10-18; in "IEEE International Integrated Reliability Workshop Final Report", (2012), 206 - 215. BibTeX |
| 24. | I. Starkov, H. Enichlmair, S. E. Tyaginov, T. Grasser: "Charge-Pumping Extraction Techniques for Hot-Carrier Induced Interface and Oxide Trap Spatial Distributions in MOSFETs"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2012-07-02 - 2012-07-06; in "Proceedings of the 19th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2012), ISBN: 978-1-4673-0980-6, 1 - 6 doi:10.1109/IPFA.2012.6306266. BibTeX |
| 23. | S. E. Tyaginov, I. Starkov, O. Triebl, M. Karner, C. Kernstock, C. Jungemann, H. Enichlmair, J.M. Park, T. Grasser: "Impact of Gate Oxide Thickness Variations on Hot-Carrier Degradation"; Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2012-07-02 - 2012-07-06; in "Proceedings of the 19th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2012), ISBN: 978-1-4673-0980-6, 1 - 5 doi:10.1109/IPFA.2012.6306265. BibTeX |
| 22. | I. Starkov, H. Enichlmair, S. E. Tyaginov, T. Grasser: "Analysis of the Threshold Voltage Turn-Around Effect in High-Voltage n-MOSFETs Due to Hot-Carrier Stress"; Poster: International Reliability Physics Symposium (IRPS), Californi, USA; 2012-04-17 - 2012-04-19; in "Proceedings of the International Reliability Physics Symposium (IRPS)", (2012), ISBN: 978-1-4577-1680-5, 6 page(s) . BibTeX |
| 21. | I. Starkov, A. S. Starkov, S. E. Tyaginov, H. Enichlmair, H. Ceric, T. Grasser: "An Analytical Model for MOSFET Local Oxide Capacitance"; Talk: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 2011-12-07 - 2011-12-09; in "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3, 2 page(s) . BibTeX |
| 20. | S. E. Tyaginov, I. Starkov, H. Enichlmair, C. Jungemann, J.M. Park, E. Seebacher, R. Orio, H. Ceric, T. Grasser: "An Analytical Approach for Physical Modeling of Hot-Carrier Induced Degradation"; Talk: 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, Bordeaux, France; 2011-10-03 - 2011-10-07; in "Proceedings of the 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2011), 51, 1525 - 1529. BibTeX |
| 19. | I. Starkov, S. E. Tyaginov, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser: "Accurate Extraction of MOSFET Interface State Spatial Distribution from Charge Pumping Measurements"; Talk: Gettering and Defect Engineering in Semiconductor Technology, Loipersdorf, Austria; 2011-09-25 - 2011-09-30; in "GADEST 2011: Abstract Booklet", (2011), 105 - 106. BibTeX |
| 18. | S. E. Tyaginov, I. Starkov, C. Jungemann, H. Enichlmair, J.M. Park, T. Grasser: "Impact of the Carrier Distribution Function on Hot-Carrier Degradation Modeling"; Talk: European Solid-State Device Research Conference (ESSDERC), Helsinki, Finland; 2011-09-12 - 2011-09-16; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2011), 151 - 154. BibTeX |
| 17. | I. Starkov, H. Ceric, S. E. Tyaginov, T. Grasser, H. Enichlmair, J.M. Park, C. Jungemann: "Analysis of Worst-Case Hot-Carrier Degradation Conditions in the Case of n- and p-channel High-Voltage MOSFETs"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 127 - 130 doi:10.1109/SISPAD.2011.6035066. BibTeX |
| 16. | S. E. Tyaginov, I. Starkov, O. Triebl, H. Ceric, T. Grasser, H. Enichlmair, J.M. Park, C. Jungemann: "Secondary Generated Holes as a Crucial Component for Modeling of HC Degradation in High-Voltage n-MOSFET"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3, 123 - 126 doi:10.1109/SISPAD.2011.6035065. BibTeX |
| 15. | I. Starkov, H. Ceric, S. E. Tyaginov, T. Grasser: "Analysis of Worst-Case Hot-Carrier Conditions for n-type MOSFET"; Talk: 7th Conference on PhD Research in Microelectronics and Electronics (PRIME), Madonna di Campiglio, Italy; 2011-07-03 - 2011-07-07; in "Proceedings of the 7th Conference on PhD Research in Microelectronics and Electronics", (2011), ISBN: 978-1-4244-9136-0, 4 page(s) doi:10.1109/PRIME.2011.5966251. BibTeX |
| 14. | S. E. Tyaginov, I. Starkov, H. Enichlmair, J.M. Park, C. Jungemann, T. Grasser: "Physics-Based Hot-Carrier Degradation Modeling"; Talk: 219th ECS Meeting, Montreal, Canada; (invited) 2011-05-01 - 2011-05-06; in "Meet. Abstr. - Electrochem. Soc. 2011", (2011)", (2011), 1 page(s) . BibTeX |
| 13. | S. E. Tyaginov, I. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser: "Interface Traps Density-of-States as a Vital Component for Hot-Carrier Degradation Modeling"; Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Montecassino Abbey and Gaeta; 2010-10-11 - 2010-10-15; in "Proceedings of the 21st European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2010), 3 page(s) . BibTeX |
| 12. | I. Starkov, S. E. Tyaginov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser: "Analysis of Worst-Case Hot-Carrier Conditions for High Voltage Transistors Based on Full-Band Monte-Carlo Simulations"; Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2010-07-05 - 2010-07-09; in "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9, 139 - 144. BibTeX |
| 11. | S. E. Tyaginov, I. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser: "Hot-Carrier Degradation Modeling Using Full-Band Monte-Carlo Simulations"; Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2010-07-05 - 2010-07-09; in "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9, 341 - 345. BibTeX |
| 10. | I. Starkov, S. E. Tyaginov, H. Enichlmair, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Ceric, T. Grasser: "HC Degradation Model: Interface State Profile-Simulations vs. Experiment"; Poster: Workshop on Dielectrics in Microelectronics (WODIM), Bratislava; 2010-06-28 - 2010-06-30; in "Book of Abstracts", (2010), 128. BibTeX |
| 9. | S. E. Tyaginov, V. Sverdlov, W. Gös, T. Grasser: "Impact of O-Si-O Bond Angle Fluctuations on the Si-O Bond-Breakage Rate"; Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Bordeaux; 2009-10-05 - 2009-10-09; in "Proceedings of the 20th European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2009), . BibTeX |
| 8. | I. Starkov, S. E. Tyaginov, T. Grasser: "Green´s Function Asymptotic in Two-Layered Periodic Medium"; Talk: 17th International Symposium NANOSTRUCTURES: Physics and Technology, Minsk; 2009-06-22 - 2009-06-26; in "Proceedings of the International Symposium NANOSTRUCTURES: Physics and Technology", (2009), 111 - 112. BibTeX |
| 7. | V. Sverdlov, O. Baumgartner, S. E. Tyaginov, T. Windbacher, S. Selberherr: "Subband Structure in Ultra-Thin Silicon Films"; Talk: 17th International Symposium NANOSTRUCTURES: Physics and Technology, Minsk; 2009-06-22 - 2009-06-26; in "Proceedings of the International Symposium NANOSTRUCTURES: Physics and Technology", (2009), 62 - 63. BibTeX |
| 6. | S. E. Tyaginov, V. Sverdlov, W. Gös, T. Grasser: "Statistics of Si-O Bond-Breakage Rate Variations induced by O-Si-O Angle Fluctuations"; Talk: International Workshop on Computational Electronics (IWCE), Beijing, China; 2009-05-27 - 2009-05-29; in "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2009), ISBN: 978-1-4244-3926-3, 29 - 32 doi:10.1109/IWCE.2009.5091156. BibTeX |
| 5. | S. E. Tyaginov, W. Gös, T. Grasser, V. Sverdlov, P. Schwaha, R. Heinzl, F. Stimpfl: "Description of Si-O Bond Breakage Using Pair-Wise Interatomic Potentials Under Consideration of the Whole Crystal"; Talk: International Reliability Physics Symposium (IRPS), Montreal; 2009-04-26 - 2009-04-30; in "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2009), 514 - 522. BibTeX |
| 4. | S. E. Tyaginov, V. Sverdlov, W. Gös, P. Schwaha, R. Heinzl, F. Stimpfl, T. Grasser: "Impact of the Surrounding Network on the Si-O Bond-Breakage Energetics"; Talk: Materials Research Society Spring Meeting (MRS), San Francisco; 2009-04-13 - 2009-04-17; in "Proceedings of the 2009 MRS Spring Meeting", (2009), . BibTeX |
| 3. | S. E. Tyaginov, V. Sverdlov, W. Gös, P. Schwaha, R. Heinzl, F. Stimpfl, T. Grasser: "Si-O Bond-Breakage Energetics under Consideration of the Whole Crystal"; Talk: International Semiconductor Technology Conference & China Semiconductor Technology International Conference, Shanghai; 2009-03-19 - 2009-03-20; in "Proceedings of the International Semiconductor Technology Conference & China Semiconductor Technology International Conference", (2009), 84. BibTeX |
| 2. | W. Gös, M. Karner, S. E. Tyaginov, Ph. Hehenberger, T. Grasser: "Level Shifts and Gate Interfaces as Vital Ingredients in Modeling of Charge Trapping"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 2008-09-09 - 2008-09-11; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7, 69 - 72 doi:10.1109/SISPAD.2008.4648239. BibTeX |
| 1. | S. E. Tyaginov, M. Vexler, A. El Hdiy, K. Gacem, V Zaporojtchenko: "Electrical Methods for Estimating the Correlation Length of Insulator Thickness Fluctuations in MIS Tunnel Structures"; Poster: Workshop on Dielectrics in Microelectronics (WODIM), Berlin; 2008-06-23 - 2008-06-25; in "15th Workshop on Dielectrics in Microelectronics", (2008), 227 - 228. BibTeX |