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Publications Stanislav Tyaginov

100 records

Publications in Scientific Journals

36.  M. Jech, A.-M. El-Sayed, S. E. Tyaginov, D. Waldhör, F. Bouakline, P. Saalfrank, D. Jabs, C. Jungemann, M. Waltl, T. Grasser:
"Quantum Chemistry Treatment of Silicon-Hydrogen Bond Rupture by Nonequilibrium Carriers in Semiconductor Devices";
Physical Review Applied, 16 (2021), 1; 014026 -1 - 014026 -24. https://doi.org/10.1103/PhysRevApplied.16.014026

35.  A. Makarov, Ph. Roussel, E. Bury, M. Vandemaele, A. Spessot, D. Linten, B. Kaczer, S. E. Tyaginov:
"Correlated Time-0 and Hot-Carrier Stress Induced FinFET Parameter Variabilities: Modeling Approach";
Micromachines, 11 (2020), 7; 675. https://doi.org/10.3390/mi11070657

34.  M. Jech, G.A. Rott, H. Reisinger, S. Tyaginov, G. Rzepa, A. Grill, D. Jabs, C. Jungemann, M. Waltl, T. Grasser:
"Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full {VG, VD} Bias Space: Implications and Peculiarities";
IEEE Transactions on Electron Devices, 67 (2020), 8; 3315 - 3322. https://doi.org/10.1109/TED.2020.3000749

33.  M. Jech, A.-M. El-Sayed, S. E. Tyaginov, A. Shluger, T. Grasser:
"Ab Initio Treatment of Silicon-Hydrogen Bond Rupture at Si/SiO2 Interfaces";
Physical Review B, 100 (2019), 195302. https://doi.org/10.1103/PhysRevB.100.195302

32.  A. Makarov, B. Kaczer, A. Chasin, M. Vandemaele, E. Bury, M. Jech, A. Grill, G. Hellings, A.-M. El-Sayed, T. Grasser, D. Linten, S. E. Tyaginov:
"Bi-Modal Variability of nFinFET Characteristics During Hot-Carrier Stress: A Modeling Approach";
IEEE Electron Device Letters, 40 (2019), 10; 1579 - 1582. https://doi.org/10.1109/LED.2019.2933729

31.  M. Jech, B. Ullmann, G. Rzepa, S. E. Tyaginov, A. Grill, M. Waltl, D. Jabs, C. Jungemann, T. Grasser:
"Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part II: Theory";
IEEE Transactions on Electron Devices, 66 (2019), 1; 241 - 248. https://doi.org/10.1109/TED.2018.2873421

30.  A. Makarov, B. Kaczer, Ph. Roussel, A. Chasin, A. Grill, M. Vandemaele, G. Hellings, A.-M. El-Sayed, T. Grasser, D. Linten, S. E. Tyaginov:
"Stochastic Modeling of the Impact of Random Dopants on Hot-Carrier Degradation in n-FinFETs";
IEEE Electron Device Letters, 40 (2019), 6; 870 - 873. https://doi.org/10.1109/LED.2019.2913625

29.  A. Makarov, S. E. Tyaginov, B. Kaczer, M. Jech, A. Chasin, A. Grill, G. Hellings, M. I. Vexler, D. Linten, T. Grasser:
"Analysis of the Features of Hot-Carrier Degradation in FinFETs";
Semiconductors (Physics of Semiconductor Devices), 52 (2018), 10; 1177 - 1182. https://doi.org/10.1134/S1063782618100081

28.  S. E. Tyaginov, A. Makarov, B. Kaczer, M. Jech, A. Chasin, A. Grill, G. Hellings, M. I. Vexler, D. Linten, T. Grasser:
"Impact of the Device Geometric Parameters on Hot-Carrier Degradation in FinFETs";
Semiconductors (Physics of Semiconductor Devices), 52 (2018), 13; 1738 - 1742. https://doi.org/10.1134/S1063782618130183

27.  S. E. Tyaginov, A. Makarov, M. Jech, M. I. Vexler, J. Franco, B. Kaczer, T. Grasser:
"Physical Principles of Self-Consistent Simulation of the Generation of Interface States and the Transport of Hot Charge Carriers in Field-Effect Transistors Based on Metal-Oxide-Semiconductor Structures";
Semiconductors (Physics of Semiconductor Devices), 52 (2018), 2; 242 - 247. https://doi.org/10.1134/S1063782618020203

26.  P. Sharma, S. E. Tyaginov, S. E. Rauch, J. Franco, A. Makarov, M. I. Vexler, B. Kaczer, T. Grasser:
"Hot-Carrier Degradation Modeling of Decananometer nMOSFETs Using the Drift-Diffusion Approach";
IEEE Electron Device Letters, 38 (2017), 2; 160 - 163. https://doi.org/10.1109/LED.2016.2645901

25.  B. Kaczer, J. Franco, S. E. Tyaginov, M. Jech, G. Rzepa, T. Grasser, B.J. O´Sullivan, R. Ritzenhaler, T. Schram, A. Spessot, D. Linten, N. Horiguchi:
"Mapping of CMOS FET Degradation in Bias Space--Application to Dram Peripheral Devices";
Journal of Vacuum Science & Technology B, 35 (2017), 1; 01A109-1 - 01A109-6. https://doi.org/10.1116/1.4972872

24.  M. Jech, P. Sharma, S. E. Tyaginov, F. Rudolf, T. Grasser:
"On the Limits of Applicability of Drift-Diffusion Based Hot Carrier Degradation Modeling";
Japanese Journal of Applied Physics, 55 (2016), 4S; 1 - 6. https://doi.org/10.7567/JJAP.55.04ED14

23.  P. Sharma, S. E. Tyaginov, M. Jech, Y. Wimmer, F. Rudolf, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser:
"The Role of Cold Carriers and the Multiple-Carrier Process of Si-H Bond Dissociation for Hot-Carrier Degradation in n- and p-channel LDMOS Devices";
Solid-State Electronics, 115 (2016), Part B; 185 - 191. https://doi.org/10.1016/j.sse.2015.08.014

22.  S. E. Tyaginov, M. Jech, J. Franco, P. Sharma, B. Kaczer, T. Grasser:
"Understanding and Modeling the Temperature Behavior of Hot-Carrier Degradation in SiON n-MOSFETs";
IEEE Electron Device Letters, 37 (2016), 1; 84 - 87. https://doi.org/10.1109/LED.2015.2503920

21.  M. I. Vexler, Yu. Illarionov, S. E. Tyaginov, T. Grasser:
"Adaptation of the Model of Tunneling in a Metal/CaF2/Si(111) System for Use in Industrial Simulators of MIS Devices";
Semiconductors (Physics of Semiconductor Devices), 49 (2015), 2; 259 - 263. https://doi.org/10.1134/S1063782615020207

20.  P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, K. Rupp, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser:
"Comparison of Analytic Distribution Function Models for Hot-Carrier Degradation in nLDMOSFETs";
Microelectronics Reliability, 55 (2015), 9-10; 1427 - 1432. https://doi.org/10.1016/j.microrel.2015.06.021

19.  Yu. Illarionov, M. Bina, S. E. Tyaginov, K. Rott, B. Kaczer, H. Reisinger, T. Grasser:
"Extraction of the Lateral Position of Border Traps in Nanoscale MOSFETs";
IEEE Transactions on Electron Devices, 62 (2015), 9; 2730 - 2737. https://doi.org/10.1109/TED.2015.2454433

18.  P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, K. Rupp, M. Bina, H. Enichlmair, J.M. Park, R. Minixhofer, H. Ceric, T. Grasser:
"Modeling of Hot-Carrier Degradation in nLDMOS Devices: Different Approaches to the Solution of the Boltzmann Transport Equation";
IEEE Transactions on Electron Devices, 62 (2015), 6; 1811 - 1818. https://doi.org/10.1109/TED.2015.2421282

17.  S. E. Tyaginov, M. Bina, J. Franco, Y. Wimmer, B. Kaczer, T. Grasser:
"On the Importance of Electron-Electron Scattering for Hot-Carrier Degradation";
Japanese Journal of Applied Physics, 54 (2015), 1 - 6. https://doi.org/10.7567/JJAP.54.04DC18

16.  Yu. Illarionov, M. I. Vexler, M. Karner, S. E. Tyaginov, J. Cervenka, T. Grasser:
"TCAD Simulation of Tunneling Leakage Current in CaF2/Si(111) MIS Structures";
Current Applied Physics, 15 (2015), 78 - 83. https://doi.org/10.1016/j.cap.2014.10.015

15.  Yu. Illarionov, M. Bina, S. E. Tyaginov, T. Grasser:
"An Analytical Approach for the Determination of the Lateral Trap Position in Ultra-Scaled MOSFETs";
Japanese Journal of Applied Physics, 53 (2014), 04EC22-1 - 04EC22-4. https://doi.org/10.7567/JJAP.53.04EC22

14.  S. E. Tyaginov, Yu. Illarionov, M. I. Vexler, M. Bina, J. Cervenka, J. Franco, B. Kaczer, T. Grasser:
"Modeling of Deep-Submicron Silicon-Based MISFETs with Calcium Fluoride Dielectric";
Journal of Computational Electronics, 13 (2014), 3; 733 - 738. https://doi.org/10.1007/s10825-014-0593-9

13.  S. E. Tyaginov, Y. Wimmer, T. Grasser:
"Modeling of Hot-Carrier Degradation Based on Thorough Carrier Transport Treatment";
Facta Universitatis (invited), 27 (2014), 4; 479 - 508. https://doi.org/10.2298/FUEE1404479T

12.  M. Bina, S. E. Tyaginov, J. Franco, K. Rupp, Y. Wimmer, D. Osintsev, B. Kaczer, T. Grasser:
"Predictive Hot-Carrier Modeling of n-Channel MOSFETs";
IEEE Transactions on Electron Devices, 61 (2014), 9; 3103 - 3110. https://doi.org/10.1109/TED.2014.2340575

11.  M. I. Vexler, S. E. Tyaginov, Yu. Illarionov, Y. K. Sing, A. D. Shenp, V. V. Fedorov, D. V. Isakov:
"A General Simulation Procedure for the Electrical Characteristics of Metal Insulator Semiconductor Tunnel Structures";
Semiconductors (Physics of Semiconductor Devices), 47 (2013), 5; 686 - 694. https://doi.org/10.1134/S1063782613050230

10.  G. Pobegen, S. E. Tyaginov, M. Nelhiebel, T. Grasser:
"Observation of Normally Distributed Energies for Interface Trap Recovery After Hot-Carrier Degradation";
IEEE Electron Device Letters, 34 (2013), 8; 939 - 941. https://doi.org/10.1109/LED.2013.2262521

9.  I. Starkov, S. E. Tyaginov, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser:
"Accurate Extraction of MOSFET Unstressed Interface State Spatial Distribution from Charge Pumping Measurements";
Solid State Phenomena, 178-179 (2011), 267 - 272. https://doi.org/10.4028/www.scientific.net/SSP.178-179.267

8.  S. E. Tyaginov, I. Starkov, H. Enichlmair, C. Jungemann, J.M. Park, E. Seebacher, R. Orio, H. Ceric, T. Grasser:
"An Analytical Approach for Physical Modeling of Hot-Carrier Induced Degradation";
Microelectronics Reliability, 51 (2011), 1525 - 1529. https://doi.org/10.1016/j.microrel.2011.07.089

7.  I. Starkov, S. E. Tyaginov, H. Enichlmair, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Ceric, T. Grasser:
"Hot-Carrier Degradation Caused Interface State Profile-Simulation versus Experiment";
Journal of Vacuum Science & Technology B, 29 (2011), 01AB09-1 - 01AB09-8. https://doi.org/10.1116/1.3534021

6.  S. E. Tyaginov, M. Vexler, A. El Hdiy, K. Gacem, V Zaporojtchenko:
"Electrical Methods for Estimating the Correlation Length of Insulator Thickness Fluctuations in MIS Tunnel Structures";
Materials Science in Semiconductor Processing, 13 (2010), 405 - 410. https://doi.org/10.1016/j.mssp.2011.07.003

5.  S. E. Tyaginov, I. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser:
"Interface Traps Density-of-States as a Vital Component for Hot-Carrier Degradation Modeling";
Microelectronics Reliability, 50 (2010), 1267 - 1272. https://doi.org/10.1016/j.microrel.2010.0

4.  S. E. Tyaginov, M. Vexler, N. S. Sokolov, S. M. Suturin, A. Banshchikov, T. Grasser, B. Meinerzhagen:
"Determination of Correlation Length for Thickness Fluctuations in Thin Oxide and Fluoride Films";
Journal of Physics D: Applied Physics, 42 (2009), 115307; 1 - 6. https://doi.org/10.1088/0022-3727/42/11/115307

3.  M. Vexler, N. S. Sokolov, S. M. Suturin, A. Banshchikov, S. E. Tyaginov, T. Grasser:
"Electrical Characterization and Modeling of the Au/CaF2/nSi(111) Sructures with High-Quality Tunnel-Thin Fluoride Layer";
Journal of Applied Physics, 105 (2009), 083716; 1 - 6. https://doi.org/10.1063/1.3110066

2.  S. E. Tyaginov, V. Sverdlov, I. Starkov, W. Gös, T. Grasser:
"Impact of O-Si-O Bond Angle Fluctuations on the Si-O Bond-Breakage Rate";
Microelectronics Reliability, 49 (2009), 998 - 1002. https://doi.org/10.1016/j.microrel.2009.06.018

1.  P.D. Yoder, M. Vexler, A. Shulekin, N. Asli, S. Gastev, I. Grekhov, P. Seegebrecht, S. Tyaginov, H. Zimmermann:
"Luminescence spectra of an Al/SiO2/p-Si tunnel metal-oxide-semiconductor structure";
Journal of Applied Physics, vol. 98 (2005), 083511-1 - 083511-12.

Contributions to Books

2.  S. E. Tyaginov:
"Physics-Based Modeling of Hot-Carrier Degradation";
in: "Hot Carrier Degradation in Semiconductor Devices", T. Grasser (ed.); Springer International Publishing, 2015, ISBN: 978-3-319-08993-5, 105 - 150. https://doi.org/10.1007/978-3-319-08994-2_4

1.  S. E. Tyaginov, I. Starkov, H. Enichlmair, J.M. Park, C. Jungemann, T. Grasser:
"Physics-Based Hot-Carrier Degradation Models";
in: "Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11", R. Sah (ed.); ECS Transactions, 2011, ISBN: 978-1-56677-865-7, 321 - 352. https://doi.org/10.1149/1.3572292

Talks and Poster Presentations (with Proceedings-Entry)

62.  S. Tyaginov, A. Grill, M. Vandemaele, T. Grasser, G. Hellings, A. Makarov, M. Jech, D. Linten, B. Kaczer:
"A Compact Physics Analytical Model for Hot-Carrier Degradation";
Talk: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 2020-04-28; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), ISBN: 978-1-7281-3199-3; 1 - 7. https://doi.org/10.1109/IRPS45951.2020.9128327

61.  A. Vasilev, M. Jech, A. Grill, G. Rzepa, C. Schleich, A. Makarov, G. Pobegen, T. Grasser, M. Waltl, S. E. Tyaginov:
"Modeling the Hysteresis of Current-Voltage Characteristics in 4H-SiC Transistors";
Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA - virtual; 2020-10-04 - 2020-10-08; in: "Proceedings of the International Integrated Reliability Workshop (IIRW)", (2020), 1 - 4. https://doi.org/10.1109/IIRW49815.2020.9312864

60.  A. Grill, E. Bury, J. Michl, S. Tyaginov, D. Linten, T. Grasser, B. Parvais, B. Kaczer, M. Waltl, I. Radu:
"Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures";
Talk: IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA - virtual; 2020-04-28 - 2020-04-30; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2020), ISBN: 978-1-7281-3199-3; 1 - 6. https://doi.org/10.1109/IRPS45951.2020.9128316

59.  M. Jech, S. Tyaginov, B. Kaczer, J. Franco, D. Jabs, C. Jungemann, M. Waltl, T. Grasser:
"First-Principles Parameter-Free Modeling of n- and p-FET Hot-Carrier Degradation";
Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco , USA; 2019-12-07 - 2019-12-11; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2019). https://doi.org/10.1109/IEDM19573.2019.8993630

58.  M. Vandemaele, B. Kaczer, S. E. Tyaginov, Z. Stanojevic, A. Makarov, A. Chasin, E. Bury, H. Mertens, D. Linten, G Groeseneken:
"Full (Vg, Vd) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs";
Talk: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2019-03-31 - 2019-04-04; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2019), ISBN: 978-1-5386-9504-3; 1 - 7. https://doi.org/10.1109/IRPS.2019.8720406

57.  J. Scharlotta, G. Bersuker, S. E. Tyaginov, C. Young, G. Haase, G. Rzepa, M. Waltl, T. Chohan, S. Iyer, A. Kotov, C. Zambelli, F. Guarin, F. M. Puglisi, C. Ostermaier:
"IIRW 2019 Discussion Group II: Reliability for Aerospace Applications";
Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2019-10-13 - 2019-10-17; in: "Proceedings of the International Integrated Reliability Workshop (IIRW)", (2019), 1 - 4. https://doi.org/10.1109/IIRW47491.2019.8989910

56.  A. Makarov, B. Kaczer, Ph. Roussel, A. Chasin, A. Grill, M. Vandemaele, G. Hellings, A.-M. El-Sayed, T. Grasser, D. Linten, S. E. Tyaginov:
"Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs";
Talk: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2019-03-31 - 2019-04-04; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2019), ISBN: 978-1-5386-9504-3. https://doi.org/10.1109/IRPS.2019.8720584

55.  A. Makarov, Ph. Roussel, E. Bury, M. Vandemaele, A. Spessot, D. Linten, B. Kaczer, S. E. Tyaginov:
"On Correlation Between Hot-Carrier Stress Induced Device Parameter Degradation and Time-Zero Variability";
Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, USA; 2019-10-13 - 2019-10-17; in: "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2019), ISBN: 978-1-7281-2203-8. https://doi.org/10.1109/IIRW47491.2019.8989882

54.  C. Schleich, J. Berens, G. Rzepa, G. Pobegen, G. Rescher, S. E. Tyaginov, T. Grasser, M. Waltl:
"Physical Modeling of Bias Temperature Instabilities in SiC MOSFETs";
Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, USA; 2019-12-07 - 2019-12-11; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2019). https://doi.org/10.1109/IEDM19573.2019.8993446

53.  S. E. Tyaginov, A. Chasin, A. Makarov, A.-M. El-Sayed, M. Jech, A. De Keersgieter, G. Eneman, M. Vandemaele, J. Franco, D. Linten, B. Kaczer:
"Physics-based Modeling of Hot-Carrier Degradation in Ge NWFETs";
Talk: International Conference on Solid State Devices and Materials (SSDM), Nagoya, Japan; 2019-09-02 - 2019-09-05; in: "Extended Abstracts of the International Conference on Solid State Devices and Materials (SSDM)", (2019), 565 - 566.

52.  A. Makarov, B. Kaczer, Ph. Roussel, A. Chasin, M. Vandemaele, G. Hellings, A.-M. El-Sayed, M. Jech, T. Grasser, D. Linten, S. E. Tyaginov:
"Simulation Study: the Effect of Random Dopants and Random Traps on Hot-Carrier Degradation in nFinFETs";
Talk: International Conference on Solid State Devices and Materials (SSDM), Nagoya, Japan; 2019-09-02 - 2019-09-05; in: "Extended Abstracts of the International Conference on Solid State Devices and Materials (SSDM)", (2019), 609 - 610.

51.  A. Makarov, B. Kaczer, Ph. Roussel, A. Chasin, M. Vandemaele, G. Hellings, A.-M. El-Sayed, M. Jech, T. Grasser, D. Linten, S. E. Tyaginov:
"Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants";
Talk: European Solid-State Device Research Conference (ESSDERC), Krakow, Poland; 2019-09-23 - 2019-09-26; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2019), ISBN: 978-1-7281-1539-9; 262 - 265. https://doi.org/10.1109/ESSDERC.2019.8901721

50.  S. Tyaginov, A. El-Sayed, A. Makarov, A. Chasin, H. Arimura, M. Vandemaele, M. Jech, E. Capogreco, L. Witters, A. Grill, A. De Keersgieter, G. Eneman, D. Linten, B. Kaczer:
"Understanding and Physical Modeling Superior Hot-Carrier Reliability of Ge pNWFETs";
Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 2019-12-07 - 2019-12-11; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2019), ISBN: 978-1-7281-4032-2; 498 - 501. https://doi.org/10.1109/IEDM19573.2019.8993644

49.  S. E. Tyaginov, M. Jech, G. Rzepa, A. Grill, A.-M. El-Sayed, G. Pobegen, A. Makarov, T. Grasser:
"Border Trap Based Modeling of SiC Transistor Transfer Characteristics";
Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2018-10-07 - 2018-10-11; in: "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2018), ISBN: 978-1-5386-6039-3. https://doi.org/10.1109/IIRW.2018.8727083

48.  M. Vandemaele, B. Kaczer, Z. Stanojevic, S. E. Tyaginov, A. Makarov, A. Chasin, H. Mertens, D. Linten, G Groeseneken:
"Distribution Function Based Simulations of Hot-Carrier Degradation in Nanowire FETs";
Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2018-10-07 - 2018-10-11; in: "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2018), ISBN: 978-1-5386-6039-3. https://doi.org/10.1109/IIRW.2018.8727081

47.  A. Makarov, S. E. Tyaginov, B. Kaczer, M. Jech, A. Chasin, A. Grill, G. Hellings, M. Vexler, D. Linten, T. Grasser:
"Hot-Carrier Degradation in FinFETs: Modeling, Peculiarities, and Impact of Device Topology";
Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 2017-12-02 - 2017-12-06; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2017), ISBN: 978-1-5386-3559-9; 310 - 313. https://doi.org/10.1109/IEDM.2017.8268381

46.  B. Ullmann, M. Jech, S. E. Tyaginov, M. Waltl, Yu. Illarionov, A. Grill, K. Puschkarsky, H. Reisinger, T. Grasser:
"The Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on Single Oxide Defects";
Poster: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2017-04-04 - 2017-04-06; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2017), ISBN: 978-1-5090-6642-1; XT-10.1 - XT-10.6. https://doi.org/10.1109/IRPS.2017.7936424

45.  P. Sharma, S. E. Tyaginov, S. E. Rauch, J. Franco, B. Kaczer, A. Makarov, M. Vexler, T. Grasser:
"A Drift-Diffusion-Based Analytic Description of the Energy Distribution Function for Hot-Carrier Degradation in Decananometer nMOSFETs";
Talk: European Solid-State Device Research Conference (ESSDERC), Lausanne, Switzerland; 2016-09-12 - 2016-09-15; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2016), ISBN: 978-1-5090-2969-3; 428 - 431. https://doi.org/10.1109/ESSDERC.2016.7599677

44.  S. E. Tyaginov, A. Makarov, M. Jech, J. Franco, P. Sharma, B. Kaczer, T. Grasser:
"On the Effect of Interface Traps on the Carrier Distribution Function During Hot-Carrier Degradation";
Poster: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2016-10-09 - 2016-10-13; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2016), ISBN: 978-1-5090-4193-0; 95 - 98. https://doi.org/10.1109/IIRW.2016.7904911

43.  P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser:
"A Model for Hot-Carrier Degradation in nLDMOS Transistors Based on the Exact Solution of the Boltzmann Transport Equation Versus the Drift-Diffusion Scheme";
Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Bologna, Italy; 2015-01-26 - 2015-01-28; in: "Proceedings of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", IEEE, (2015), 21 - 24. https://doi.org/10.1109/ULIS.2015.7063763

42.  P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, K. Rupp, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser:
"Comparison of Analytic Distribution Function Models for Hot-Carrier Degradation in nLDMOSFETs";
Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Toulouse, France; 2015-10-05 - 2015-10-09; in: "Abstracts of the 26th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis", (2015), 60.

41.  P. Sharma, M. Jech, S. E. Tyaginov, F. Rudolf, K. Rupp, H. Enichlmair, J.M. Park, T. Grasser:
"Modeling of Hot-Carrier Degradation in LDMOS Devices Using a Drift-Diffusion Based Approach";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2015), ISBN: 978-1-4673-7858-1; 60 - 63. https://doi.org/10.1109/SISPAD.2015.7292258

40.  S. E. Tyaginov, M. Jech, P. Sharma, J. Franco, B. Kaczer, T. Grasser:
"On the Temperature Behavior of Hot-Carrier Degradation";
Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2015-10-11 - 2015-10-15; in: "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2015), 143 - 146. https://doi.org/10.1109/IIRW.2015.7437088

39.  B. Kaczer, J. Franco, M. Cho, T. Grasser, P. Roussel, S. E. Tyaginov, M. Bina, Y. Wimmer, L. M. Procel, L. Trojman, F. Crupi, G. Pitner, V. Putcha, P. Weckx, E. Bury, Z. Ji, A. De Keersgieter, T. Chiarella, N. Horiguchi, G Groeseneken, A. Thean:
"Origins and Implications of Increased Channel Hot Carrier Variability in nFinFETs";
Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2015-04-19 - 2015-04-23; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2015), 6 pages. https://doi.org/10.1109/IRPS.2015.7112706

38.  P. Sharma, S. E. Tyaginov, Y. Wimmer, F. Rudolf, K. Rupp, M. Bina, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser:
"Predictive and Efficient Modeling of Hot-Carrier Degradation in nLDMOS Devices";
Talk: IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), Hong Kong, China; 2015-05-10 - 2015-05-14; in: "Proceedings of the IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)", (2015), ISBN: 978-1-4799-6259-4; 389 - 392. https://doi.org/10.1109/ISPSD.2015.7123471

37.  S. E. Tyaginov, M. Bina, J. Franco, Y. Wimmer, D. Osintsev, B. Kaczer, T. Grasser:
"A Predictive Physical Model for Hot-Carrier Degradation in Ultra-Scaled MOSFETs";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2014), ISBN: 978-1-4799-5285-4; 89 - 92. https://doi.org/10.1109/SISPAD.2014.6931570

36.  Yu. Illarionov, M. Bina, S. E. Tyaginov, K. Rott, H. Reisinger, B. Kaczer, T. Grasser:
"A Reliable Method for the Extraction of the Lateral Position of Defects in Ultra-scaled MOSFETs";
Poster: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 2014-06-01 - 2014-06-05; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2014), ISBN: 978-1-4799-3317-4; XT13.1 - XT13.6.

35.  S. E. Tyaginov, M. Bina, J. Franco, Y. Wimmer, F. Rudolf, H. Enichlmair, J.M. Park, B. Kaczer, H. Ceric, T. Grasser:
"Dominant Mechanism of Hot-Carrier Degradation in Short- and Long-Channel Transistors";
Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2014-10-12 - 2014-10-16; in: "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2014), ISBN: 978-1-4799-7308-8; 63 - 68. https://doi.org/10.1109/IIRW.2014.7049512

34.  S. E. Tyaginov, M. Bina, J. Franco, B. Kaczer, T. Grasser:
"On the Importance of Electron-electron Scattering for Hot-carrier Degradation";
Talk: International Conference on Solid State Devices and Materials (SSDM), Tsukuba, Japan; 2014-09-08 - 2014-09-11; in: "Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials (SSDM)", (2014), 858 - 859.

33.  S. E. Tyaginov, M. Bina, J. Franco, D. Osintsev, O. Triebl, B. Kaczer, T. Grasser:
"Physical Modeling of Hot-Carrier Degradation for Short- and Long-channel MOSFETs";
Poster: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 2014-06-01 - 2014-06-05; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2014), ISBN: 978-1-4799-3317-4; XT16.1 - XT16.8.

32.  Y. Wimmer, S. E. Tyaginov, F. Rudolf, K. Rupp, M. Bina, H. Enichlmair, J.M. Park, R. Minixhofer, H. Ceric, T. Grasser:
"Physical Modeling of Hot-Carrier Degradation in nLDMOS Transistors";
Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2014-10-12 - 2014-10-16; in: "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", IEEE, (2014), ISBN: 978-1-4799-7308-8; 58 - 62. https://doi.org/10.1109/IIRW.2014.7049511

31.  M. Vexler, Yu. Illarionov, S. E. Tyaginov, N. S. Sokolov, V. V. Fedorov, T. Grasser:
"Simulation of the Electrical Characteristics of the Devices with Thin Calcium Fluoride Films on Silicon-(111) Using MINIMOS-NT";
Talk: DIELECTRICS-2014, St-Petersburg, Russia; 2014-06-02 - 2014-06-06; in: "Materials of XIII International conference DIELECTRICS", (2014), 159 - 162.

30.  Yu. Illarionov, S. E. Tyaginov, M. Bina, T. Grasser:
"A method to determine the lateral trap position in ultra-scaled MOSFETs";
Talk: Solid State Devices and Materials Conference (SSDM), Fukuoka, Japan; 2013-09-24 - 2013-09-27; in: "Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials(SSDM)", (2013), ISBN: 978-4-86348-362-0; 728 - 729.

29.  G.A. Rott, H. Nielen, H. Reisinger, W. Gustin, S. E. Tyaginov, T. Grasser:
"Drift Compensating Effect during Hot-Carrier Degradation of 130nm Dual Gate Oxide p-channel Transistors";
Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 2013-10-13 - 2013-10-17; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2013), ISBN: 978-1-4799-0350-4; 73 - 77.

28.  S. E. Tyaginov, M. Bina, J. Franco, D. Osintsev, Y. Wimmer, B. Kaczer, T. Grasser:
"Essential Ingredients for Modeling of Hot-Carrier Degradation in Ultra-Scaled MOSFETs";
Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 2013-10-13 - 2013-10-17; in: "Final Report of the IEEE International Integrated Reliability Workshop (IIRW)", (2013), ISBN: 978-1-4799-0350-4; 98 - 101.

27.  S. E. Tyaginov, D. Osintsev, Yu. Illarionov, J.M. Park, H. Enichlmair, M. I. Vexler, T. Grasser:
"Tunnelling of strongly non-equilibrium carriers in the transistors of traditional configuration";
Poster: XI Russian Conference on Semiconductor Physics, St-Petersburg, Russia; 2013-09-16 - 2013-09-20; in: "Abstracts of XI Russian Conference on Semiconductor Physics", (2013), ISBN: 978-5-93634-033-3; 441.

26.  I. Starkov, H. Enichlmair, S. E. Tyaginov, T. Grasser:
"Analysis of the Threshold Voltage Turn-Around Effect in High-Voltage n-MOSFETs Due to Hot-Carrier Stress";
Poster: International Reliability Physics Symposium (IRPS), Californi, USA; 2012-04-17 - 2012-04-19; in: "Proceedings of the International Reliability Physics Symposium (IRPS)", (2012), ISBN: 978-1-4577-1680-5; 6 pages.

25.  I. Starkov, H. Enichlmair, S. E. Tyaginov, T. Grasser:
"Charge-Pumping Extraction Techniques for Hot-Carrier Induced Interface and Oxide Trap Spatial Distributions in MOSFETs";
Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2012-07-02 - 2012-07-06; in: "Proceedings of the 19th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2012), ISBN: 978-1-4673-0980-6; 1 - 6. https://doi.org/10.1109/IPFA.2012.6306266

24.  S. E. Tyaginov, I. Starkov, O. Triebl, M. Karner, C. Kernstock, C. Jungemann, H. Enichlmair, J.M. Park, T. Grasser:
"Impact of Gate Oxide Thickness Variations on Hot-Carrier Degradation";
Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2012-07-02 - 2012-07-06; in: "Proceedings of the 19th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2012), ISBN: 978-1-4673-0980-6; 1 - 5. https://doi.org/10.1109/IPFA.2012.6306265

23.  M. Bina, K. Rupp, S. E. Tyaginov, O. Triebl, T. Grasser:
"Modeling of Hot Carrier Degradation Using a Spherical Harmonics Expansion of the Bipolar Boltzmann Transport Equation";
Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 2012-12-10 - 2012-12-12; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2012), 713 - 716. https://doi.org/10.1109/IEDM.2012.6479138

22.  S. E. Tyaginov, T. Grasser:
"Modeling of Hot-Carrier Degradation: Physics and Controversial Issues";
Talk: IEEE International Integrated Reliability Workshop, California; 2012-10-14 - 2012-10-18; in: "IEEE International Integrated Reliability Workshop Final Report", (2012), 206 - 215.

21.  I. Starkov, S. E. Tyaginov, H. Enichlmair, J.M. Park, H. Ceric, T. Grasser:
"Accurate Extraction of MOSFET Interface State Spatial Distribution from Charge Pumping Measurements";
Talk: Gettering and Defect Engineering in Semiconductor Technology, Loipersdorf, Austria; 2011-09-25 - 2011-09-30; in: "GADEST 2011: Abstract Booklet", (2011), 105 - 106.

20.  S. E. Tyaginov, I. Starkov, H. Enichlmair, C. Jungemann, J.M. Park, E. Seebacher, R. Orio, H. Ceric, T. Grasser:
"An Analytical Approach for Physical Modeling of Hot-Carrier Induced Degradation";
Talk: 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, Bordeaux, France; 2011-10-03 - 2011-10-07; in: "Proceedings of the 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", 51 (2011), 1525 - 1529.

19.  I. Starkov, A. S. Starkov, S. E. Tyaginov, H. Enichlmair, H. Ceric, T. Grasser:
"An Analytical Model for MOSFET Local Oxide Capacitance";
Talk: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 2011-12-07 - 2011-12-09; in: "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3; 2 pages.

18.  I. Starkov, H. Ceric, S. E. Tyaginov, T. Grasser:
"Analysis of Worst-Case Hot-Carrier Conditions for n-type MOSFET";
Talk: 7th Conference on PhD Research in Microelectronics and Electronics (PRIME), Madonna di Campiglio, Italy; 2011-07-03 - 2011-07-07; in: "Proceedings of the 7th Conference on PhD Research in Microelectronics and Electronics", (2011), ISBN: 978-1-4244-9136-0; 4 pages. https://doi.org/10.1109/PRIME.2011.5966251

17.  I. Starkov, H. Ceric, S. E. Tyaginov, T. Grasser, H. Enichlmair, J.M. Park, C. Jungemann:
"Analysis of Worst-Case Hot-Carrier Degradation Conditions in the Case of n- and p-channel High-Voltage MOSFETs";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3; 127 - 130. https://doi.org/10.1109/SISPAD.2011.6035066

16.  S. E. Tyaginov, I. Starkov, C. Jungemann, H. Enichlmair, J.M. Park, T. Grasser:
"Impact of the Carrier Distribution Function on Hot-Carrier Degradation Modeling";
Talk: European Solid-State Device Research Conference (ESSDERC), Helsinki, Finland; 2011-09-12 - 2011-09-16; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2011), 151 - 154.

15.  S. E. Tyaginov, I. Starkov, H. Enichlmair, J.M. Park, C. Jungemann, T. Grasser:
"Physics-Based Hot-Carrier Degradation Modeling";
Talk: 219th ECS Meeting, Montreal, Canada (invited); 2011-05-01 - 2011-05-06; in: "Meet. Abstr. - Electrochem. Soc. 2011", (2011)", (2011), 1 pages.

14.  S. E. Tyaginov, I. Starkov, O. Triebl, H. Ceric, T. Grasser, H. Enichlmair, J.M. Park, C. Jungemann:
"Secondary Generated Holes as a Crucial Component for Modeling of HC Degradation in High-Voltage n-MOSFET";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2011), ISBN: 978-1-61284-418-3; 123 - 126. https://doi.org/10.1109/SISPAD.2011.6035065

13.  I. Starkov, S. E. Tyaginov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser:
"Analysis of Worst-Case Hot-Carrier Conditions for High Voltage Transistors Based on Full-Band Monte-Carlo Simulations";
Poster: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2010-07-05 - 2010-07-09; in: "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9; 139 - 144.

12.  I. Starkov, S. E. Tyaginov, H. Enichlmair, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Ceric, T. Grasser:
"HC Degradation Model: Interface State Profile-Simulations vs. Experiment";
Poster: Workshop on Dielectrics in Microelectronics (WODIM), Bratislava; 2010-06-28 - 2010-06-30; in: "Book of Abstracts", (2010), 128.

11.  S. E. Tyaginov, I. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser:
"Hot-Carrier Degradation Modeling Using Full-Band Monte-Carlo Simulations";
Talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2010-07-05 - 2010-07-09; in: "Proceedings of the 17th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2010), ISBN: 978-1-4244-5595-9; 341 - 345.

10.  S. E. Tyaginov, I. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, T. Grasser:
"Interface Traps Density-of-States as a Vital Component for Hot-Carrier Degradation Modeling";
Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Montecassino Abbey and Gaeta; 2010-10-11 - 2010-10-15; in: "Proceedings of the 21st European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2010), 3 pages.

9.  S. E. Tyaginov, W. Gös, T. Grasser, V. Sverdlov, P. Schwaha, R. Heinzl, F. Stimpfl:
"Description of Si-O Bond Breakage Using Pair-Wise Interatomic Potentials Under Consideration of the Whole Crystal";
Talk: International Reliability Physics Symposium (IRPS), Montreal; 2009-04-26 - 2009-04-30; in: "Proceedings of the IEEE International Reliability Physics Symposium (IRPS)", (2009), 514 - 522.

8.  I. Starkov, S. E. Tyaginov, T. Grasser:
"Green´s Function Asymptotic in Two-Layered Periodic Medium";
Talk: 17th International Symposium NANOSTRUCTURES: Physics and Technology, Minsk; 2009-06-22 - 2009-06-26; in: "Proceedings of the International Symposium NANOSTRUCTURES: Physics and Technology", (2009), 111 - 112.

7.  S. E. Tyaginov, V. Sverdlov, W. Gös, T. Grasser:
"Impact of O-Si-O Bond Angle Fluctuations on the Si-O Bond-Breakage Rate";
Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Bordeaux; 2009-10-05 - 2009-10-09; in: "Proceedings of the 20th European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2009).

6.  S. E. Tyaginov, V. Sverdlov, W. Gös, P. Schwaha, R. Heinzl, F. Stimpfl, T. Grasser:
"Impact of the Surrounding Network on the Si-O Bond-Breakage Energetics";
Talk: Materials Research Society Spring Meeting (MRS), San Francisco; 2009-04-13 - 2009-04-17; in: "Proceedings of the 2009 MRS Spring Meeting", (2009).

5.  S. E. Tyaginov, V. Sverdlov, W. Gös, P. Schwaha, R. Heinzl, F. Stimpfl, T. Grasser:
"Si-O Bond-Breakage Energetics under Consideration of the Whole Crystal";
Talk: International Semiconductor Technology Conference & China Semiconductor Technology International Conference, Shanghai; 2009-03-19 - 2009-03-20; in: "Proceedings of the International Semiconductor Technology Conference & China Semiconductor Technology International Conference", (2009), 84.

4.  S. E. Tyaginov, V. Sverdlov, W. Gös, T. Grasser:
"Statistics of Si-O Bond-Breakage Rate Variations induced by O-Si-O Angle Fluctuations";
Talk: International Workshop on Computational Electronics (IWCE), Beijing, China; 2009-05-27 - 2009-05-29; in: "Proceedings of the International Workshop on Computational Electronics (IWCE)", (2009), ISBN: 978-1-4244-3926-3; 29 - 32. https://doi.org/10.1109/IWCE.2009.5091156

3.  V. Sverdlov, O. Baumgartner, S. E. Tyaginov, T. Windbacher, S. Selberherr:
"Subband Structure in Ultra-Thin Silicon Films";
Talk: 17th International Symposium NANOSTRUCTURES: Physics and Technology, Minsk; 2009-06-22 - 2009-06-26; in: "Proceedings of the International Symposium NANOSTRUCTURES: Physics and Technology", (2009), 62 - 63.

2.  S. E. Tyaginov, M. Vexler, A. El Hdiy, K. Gacem, V Zaporojtchenko:
"Electrical Methods for Estimating the Correlation Length of Insulator Thickness Fluctuations in MIS Tunnel Structures";
Poster: Workshop on Dielectrics in Microelectronics (WODIM), Berlin; 2008-06-23 - 2008-06-25; in: "15th Workshop on Dielectrics in Microelectronics", (2008), 227 - 228.

1.  W. Gös, M. Karner, S. E. Tyaginov, Ph. Hehenberger, T. Grasser:
"Level Shifts and Gate Interfaces as Vital Ingredients in Modeling of Charge Trapping";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2008), ISBN: 978-1-4244-1753-7; 69 - 72. https://doi.org/10.1109/SISPAD.2008.4648239