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Publications Bianka Ullmann

12 records

Books and Editorships

2.   Ullmann, B., Artner, G., Hahn, I., Hans, P., Krebs, H., Eder-Neuhauser, P., Zemann, R. (Eds.). (2016).
Proceedings VSS 2016 - Vienna Young Scientists Symposium.
Book of Abstracts, Dipl.Ing. Heinz A. Krebs. (reposiTUm)

1.   Zemann, R., Grill, A., Hahn, I., Krebs, H., Mayr, A., Eder-Neuhauser, P., Ullmann, B. (Eds.). (2015).
Proceedings VSS 2015 - Vienna Young Scientists Symposium.
Book of Abstracts, Dipl.Ing. Heinz A. Krebs. (reposiTUm)

Publications in Scientific Journals

4.   Ullmann, B., Puschkarsky, K., Waltl, M., Reisinger, H., Grasser, T. (2019).
Evaluation of Advanced MOSFET Threshold Voltage Drift Measurement Techniques.
IEEE Transactions on Device and Materials Reliability, 19(2), 358–362. https://doi.org/10.1109/tdmr.2019.2909993 (reposiTUm)

3.   Ullmann, B., Jech, M., Puschkarsky, K., Rott, G. A., Waltl, M., Illarionov, Y., Reisinger, H., Grasser, T. (2019).
Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part I: Experimental.
IEEE Transactions on Electron Devices, 66(1), 232–240. https://doi.org/10.1109/ted.2018.2873419 (reposiTUm)

2.   Jech, M., Ullmann, B., Rzepa, G., Tyaginov, S., Grill, A., Waltl, M., Jabs, D., Jungemann, C., Grasser, T. (2019).
Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part II: Theory.
IEEE Transactions on Electron Devices, 66(1), 241–248. https://doi.org/10.1109/ted.2018.2873421 (reposiTUm)

1.   Ullmann, B., Grasser, T. (2017).
Transformation: Nanotechnology—challenges in Transistor Design and Future Technologies.
Elektrotechnik Und Informationstechnik : E, i, 134(7), 349–354. https://doi.org/10.1007/s00502-017-0534-y (reposiTUm)

Talks and Poster Presentations (with Proceedings-Entry)

2.   Ullmann, B., Jech, M., Tyaginov, S., Waltl, M., Illarionov, Y., Grill, A., Puschkarsky, K., Reisinger, H., Grasser, T. (2017).
The Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on Single Oxide Defects.
In 2017 IEEE International Reliability Physics Symposium (IRPS), Phoenix. https://doi.org/10.1109/irps.2017.7936424 (reposiTUm)

1.   Ullmann, B., Waltl, M., Grasser, T. (2015).
Characterization of the Permanent Component of MOSFET Degradation Mechanisms.
In Proceedings of the 2015 Vienna Young Scient Symposium (pp. 36–37), Wien, Austria. (reposiTUm)

Talks and Poster Presentations (without Proceedings-Entry)

3.   Windbacher, T., Ullmann, B., Grill, A., Weinbub, J. (2016).
Ihr Smartphone - Ein Supercomputer Vor 20 Jahren. Ein Einblick in Die Mikro- Und Nanoelektronik.
European Researchers’ Night: beSCIENCEd 2016, Wien, Austria. (reposiTUm)

2.   Winkler, G., Schreitl, M., Ullmann, B., Schlichtner, W., Steinhauser, G., Kazakov, G., Schumm, T. (2013).
Towards a Nuclear Clock With 229Thorium.
CoQus summer school 2013, Vienna, Austria. (reposiTUm)

1.   Schreitl, M., Winkler, G., Ullmann, B., Schlichtner, W., Steinhauser, G., Kazakov, G., Schumm, T. (2012).
Towards a Nuclear Clock With 229Thorium.
QCMC 2012, Vienna, Austria, Austria. (reposiTUm)

Doctor's Theses (authored and supervised)