Publications Stephan Enzo Ungersböck

67 records

Publications in Scientific Journals

16.   Sverdlov, V., Ungersboeck, E., Kosina, H., Selberherr, S. (2008).
Current Transport Models for Nanoscale Semiconductor Devices.
Materials Science and Engineering: R: Reports, 58(6), 228–270. https://doi.org/10.1016/j.mser.2007.11.001 (reposiTUm)

15.   Ungersboeck, E., Gös, W., Dhar, S., Kosina, H., Selberherr, S. (2008).
The Effect of Uniaxial Stress on Band Structure and Electron Mobility of Silicon.
Mathematics and Computers in Simulation, 79(4), 1071–1077. https://doi.org/10.1016/j.matcom.2007.10.004 (reposiTUm)

14.   Dhar, S., Ungersböck, S. E., Kosina, H., Grasser, T., Selberherr, S. (2007).
Electron Mobility Model for 〈110〉 Stressed Silicon Including Strain-Dependent Mass.
IEEE Transactions on Nanotechnology, 6(1), 97–100. https://doi.org/10.1109/tnano.2006.888533 (reposiTUm)

13.   Krishnamohan, T., Jungemann, C., Kim, D., Ungersboeck, E., Selberherr, S., Pham, A.-T., Meinerzhagen, B., Wong, P., Nishi, Y., Saraswat, K. C. (2007).
High Performance, Uniaxially-Strained, Silicon and Germanium, Double-Gate P-MOSFETs.
Microelectronic Engineering, 84(9–10), 2063–2066. https://doi.org/10.1016/j.mee.2007.04.085 (reposiTUm)

12.   Ungersboeck, E., Dhar, S., Karlowatz, G., Kosina, H., Selberherr, S. (2007).
Physical Modeling of Electron Mobility Enhancement for Arbitrarily Strained Silicon.
Journal of Computational Electronics, 6(1–3), 55–58. https://doi.org/10.1007/s10825-006-0047-0 (reposiTUm)

11.   Ungersboeck, E., Dhar, S., Karlowatz, G., Sverdlov, V., Kosina, H., Selberherr, S. (2007).
The Effect of General Strain on the Band Structure and Electron Mobility of Silicon.
IEEE Transactions on Electron Devices, 54(9), 2183–2190. https://doi.org/10.1109/ted.2007.902880 (reposiTUm)

10.   Sverdlov, V., Ungersboeck, S. E., Kosina, H. (2007).
Theoretical Electron Mobility Analysis in Thin-Body FETs: Dependence on Substrate Orientation and Biaxial Strain.
IEEE Transactions on Nanotechnology, 6(3), 334–340. https://doi.org/10.1109/tnano.2007.894835 (reposiTUm)

9.   Sverdlov, V., Ungersboeck, E., Kosina, H., Selberherr, S. (2007).
Volume Inversion Mobility in SOI MOSFETs for Different Thin Body Orientations.
Solid-State Electronics, 51(2), 299–305. https://doi.org/10.1016/j.sse.2007.01.022 (reposiTUm)

8.   Dhar, S., Kosina, H., Karlowatz, G., Ungersboeck, S. E., Grasser, T., Selberherr, S. (2006).
High-Field Electron Mobility Model for Strained-Silicon Devices.
IEEE Transactions on Electron Devices, 53(12), 3054–3062. https://doi.org/10.1109/ted.2006.885639 (reposiTUm)

7.   Ungersboeck, E., Kosina, H. (2006).
Monte Carlo Study of Electron Transport in Strained Silicon Inversion Layers.
Journal of Computational Electronics, 5(2–3), 79–83. https://doi.org/10.1007/s10825-006-8823-4 (reposiTUm)

6.   Dhar, S., Kosina, H., Palankovski, V., Ungersböck, S. E., Selberherr, S. (2005).
Electron Mobility Model for Strained-Si Devices.
IEEE Transactions on Electron Devices, 52(4), 527–533. https://doi.org/10.1109/ted.2005.844788 (reposiTUm)

5.   Pourfath, M., Ungersboeck, E., Gehring, A., Kosina, H., Selberherr, S., PARK, W.-J., Cheong, B.-H. (2005).
Numerical Analysis of Coaxial Double Gate Schottky Barrier Carbon Nanotube Field Effect Transistors.
Journal of Computational Electronics, 4(1–2), 75–78. https://doi.org/10.1007/s10825-005-7111-z (reposiTUm)

4.   Pourfath, M., Ungersboeck, E., Gehring, A., Cheong, B. H., Park, W. J., Kosina, H., Selberherr, S. (2005).
Optimization of Schottky Barrier Carbon Nanotube Field Effect Transistors.
Microelectronic Engineering, 81(2–4), 428–433. https://doi.org/10.1016/j.mee.2005.03.043 (reposiTUm)

3.   Ungersboeck, E., Pourfath, M., Kosina, H., Gehring, A., Cheong, B.-H., Park, W.-J., Selberherr, S. (2005).
Optimization of Single-Gate Carbon-Nanotube Field-Effect Transistors.
IEEE Transactions on Nanotechnology, 4(5), 533–538. https://doi.org/10.1109/tnano.2005.851402 (reposiTUm)

2.   Pourfath, M., Gehring, A., Ungersboeck, E., Kosina, H., Selberherr, S., Cheong, B. H., Park, W. J. (2005).
Separated Carrier Injection Control in Carbon Nanotube Field-Effect Transistors.
Journal of Applied Physics, 97(10), 106103. https://doi.org/10.1063/1.1897491 (reposiTUm)

1.  M. Nedjalkov, H. Kosina, E. Ungersböck, S. Selberherr:
"A Quasi-Particle Model of the Electron-Wigner Potential Interaction";
Semiconductor Science and Technology, 19 (2004), 4; 226 - 228. https://doi.org/10.1088/0268-1242/19/4/076

Contributions to Books

4.   Sverdlov, V., Ungersboeck, E., Kosina, H. (2007).
Mobility Modeling in SOI FETs for Different Substrate Orientations and Strain Conditions.
In S. Hall, A. Nazarov, V. Lysenko (Eds.), Nanoscaled Semiconductor-on-Insulator Structures and Devices (pp. 357–362). Springer Netherlands. https://doi.org/10.1007/978-1-4020-6380-0_23 (reposiTUm)

3.   Karlowatz, G., Ungersböck, S. E., Wessner, W., Kosina, H., Selberherr, S. (2006).
Analysis of Hole Transport in Arbitrarily Strained Germanium.
In D. Harame, J. Boquet, M. Caymax, J. Cressler, H. Iwai, S. Koester, G. Masini, J. Murota, A. Reznicek, K. Rim, B. Tillack, S. Zaima (Eds.), ECS Transactions (pp. 443–450). ECS Transactions. https://doi.org/10.1149/1.2355842 (reposiTUm)

2.   Ungersboeck, E., Sverdlov, V., Kosina, H., Selberherr, S. (2006).
Low-Field Electron Mobility in Stressed UTB SOI MOSFETs for Different Substrate Orientations.
In D. Harame, J. Boquet, M. Caymax, J. Cressler, H. Iwai, S. Koester, G. Masini, J. Murota, A. Reznicek, K. Rim, B. Tillack, S. Zaima (Eds.), ECS Transactions (pp. 45–54). ECS Transactions. https://doi.org/10.1149/1.2355793 (reposiTUm)

1.   Ungersboeck, E., Sverdlov, V., Kosina, H., Selberherr, S. (2006).
Modeling of Advanced Semiconductor Devices.
In J. A. Diniz, P. French, N. Morimoto, J. W. Swart, D. De Lima Monteiro (Eds.), ECS Transactions (pp. 207–216). ECS Transactions. https://doi.org/10.1149/1.2813493 (reposiTUm)

Talks and Poster Presentations (with Proceedings-Entry)

39.   Sverdlov, V., Ungersboeck, E., Kosina, H. (2008).
Monte Carlo Algorithm for Mobility Calculations in Thin Body Field Effect Transistors: Role of Degeneracy and Intersubband Scattering.
In Large-Scale Scientific Computing: 6th International Conference, LSSC 2007 (pp. 157–164), Sozopol, Bulgaria. https://doi.org/10.1007/978-3-540-78827-0_16 (reposiTUm)

38.   Sverdlov, V., Ungersböck, S., Kosina, H., Selberherr, S. (2007).
Effects of Shear Strain on the Conduction Band in Silicon: An Efficient Two-Band k.p Theory.
In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 386–389), Montreux, Austria. (reposiTUm)

37.   Sverdlov, V., Ungersböck, S., Kosina, H. (2007).
Influence of Uniaxial [110] Stress on Silicon Band Structure and Electron Low-Field Mobility in Ultra-Thin Body SOIs.
In EUROSOI 2007 (pp. 39–40), Granadea, Spanien, Austria. (reposiTUm)

36.   Sverdlov, V., Karlowatz, G., Ungersboeck, E., Kosina, H. (2007).
Influence of Uniaxial [110] Stress on the Silicon Conduction Band Structure: Stress Dependence of the Nonparabolicity Parameter.
In Simulation of Semiconductor Processes and Devices 2007 (pp. 329–332), Vienna, Austria. https://doi.org/10.1007/978-3-211-72861-1_79 (reposiTUm)

35.   Ungersboeck, E., Sverdlov, V., Kosina, H., Selberherr, S. (2007).
Low-Field Mobility in Strained Silicon Inversion Layers and UTB MOSFETs for Different Substrate Orientations.
In AIP Conference Proceedings. https://doi.org/10.1063/1.2730422 (reposiTUm)

34.   Vasicek, M., Karner, M., Ungersboeck, E., Wagner, M., Kosina, H., Grasser, T. (2007).
Modeling of Macroscopic Transport Parameters in Inversion Layers.
In Simulation of Semiconductor Processes and Devices 2007 (pp. 201–204), Vienna, Austria. https://doi.org/10.1007/978-3-211-72861-1_48 (reposiTUm)

33.   Schwaha, P., Schwaha, M., Heinzl, R., Ungersböck, S., Selberherr, S. (2007).
Simulation Methodologies for Scientific Computing - Modern Application Design.
In Proceedings of the 2nd ICSOFT 2007 (pp. 270–276), Barcelona. (reposiTUm)

32.   Dhar, S., Kosina, H., Karlowatz, G., Ungersböck, S., Grasser, T., Selberherr, S. (2006).
A Tensorial High-Field Electron Mobility Model for Strained Silicon.
In 2006 International SiGe Technology and Device Meeting Conference Digest (pp. 72–73), Princeton. (reposiTUm)

31.   Karlowatz, G., Ungersböck, S., Wessner, W., Kosina, H., Selberherr, S. (2006).
Analysis of Hole Transport in Arbitrarily Strained Germanium.
In 210th ECS Meeting (p. 1), Cancun. (reposiTUm)

30.   Dhar, S., Ungersboeck, E., Kosina, H., Grasser, T., Selberherr, S. (2006).
Analytical Modeling of Electron Mobility in Strained Germanium.
In 2006 International Conference on Simulation of Semiconductor Processes and Devices, Monterey, California, United States. https://doi.org/10.1109/sispad.2006.282833 (reposiTUm)

29.   Sverdlov, V., Ungersböck, S., Kosina, H., Selberherr, S. (2006).
Comparative Study of Low-Field Mobilities in Double- And Single-Gate Ultra-Thin Body SOI for Different Substrate Orientations.
In Abstracts IEEE 2006 Silicon Nanoelectronics Workshop (pp. 17–18), Honolulu. (reposiTUm)

28.   Ungersboeck, E., Sverdlov, V., Kosina, H., Selberherr, S. (2006).
Electron Inversion Layer Mobility Enhancement by Uniaxial Stress on (001) and (110) Oriented MOSFETs.
In 2006 International Conference on Simulation of Semiconductor Processes and Devices, Monterey, California, United States. https://doi.org/10.1109/sispad.2006.282834 (reposiTUm)

27.   Dhar, S., Ungersböck, S., Kosina, H., Grasser, T., Selberherr, S. (2006).
Electron Mobility Model for #Lt110> Stressed Si Including Strain-Dependent Mass.
In Abstracts IEEE 2006 Silicon Nanoelectronics Workshop (pp. 153–154), Honolulu. (reposiTUm)

26.   Karlowatz, G., Ungersboeck, E., Wessner, W., Kosina, H. (2006).
Full-Band Monte Carlo Analysis of Electron Transport in Arbitrarily Strained Silicon.
In 2006 International Conference on Simulation of Semiconductor Processes and Devices, Monterey, California, United States. https://doi.org/10.1109/sispad.2006.282839 (reposiTUm)

25.   Palankovski, V., Marchlewski, A., Ungersböck, S., Selberherr, S. (2006).
Identification of Transport Parameters for Gallium Nitride Based Semiconductor Devices.
In 5th Mathmod Vienna Proceedings (pp. 14-1–14-9), Wien, Austria. (reposiTUm)

24.   Ungersböck, S., Sverdlov, V., Kosina, H., Selberherr, S. (2006).
Low-Field Electron Mobility in Stressed UTB SOI MOSFETs for Different Substrate Orientations.
In 210th ECS Meeting (p. 1), Cancun. (reposiTUm)

23.   Sverdlov, V., Ungersböck, S., Kosina, H. (2006).
Mobility Modeling in SOI FETs for Different Substrate Orientations and Strain Conditions.
In NATO Advanced Research Workshop Conference Abstracts (pp. 77–78), Sudak. (reposiTUm)

22.   Sverdlov, V., Ungersböck, S., Kosina, H. (2006).
Mobility for High Effective Field in Double-Gate and Single-Gate SOI for Different Substrate Orientations.
In EUROSOI 2006 Second Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (pp. 133–134), Granadea, Spanien, Austria. (reposiTUm)

21.   Ungersböck, S., Sverdlov, V., Kosina, H., Selberherr, S. (2006).
Modeling of Advanced Semiconductor Devices.
In ECS Transactions (pp. 207–216), Ouro Preto. (reposiTUm)

20.   Dhar, S., Ungersböck, S., Nedjalkov, M., Palankovski, V. (2006).
Monte Carlo Simulation of the Electron Mobility in Strained Silicon.
In The Fifteenth International Scientific and Applied Science Conference Electronics ET'2006 Proceedings of the Conference Book 2 (pp. 169–173), Sozopol. (reposiTUm)

19.   Sverdlov, V., Ungersböck, S., Kosina, H., Selberherr, S. (2006).
Orientation Dependence of the Low Field Mobility in Double- And Single-Gate SOI FETs.
In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 178–181), Montreux, Austria. (reposiTUm)

18.  E. Ungersböck, S. Dhar, G. Karlowatz, H. Kosina, S. Selberherr:
"Physical Modeling of Electron Mobility Enhancement for Arbitrarily Strained Silicon";
Poster: International Workshop on Computational Electronics (IWCE), Vienna, Austria; 2006-05-25 - 2006-05-27; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2006), ISBN: 3-901578-16-1; 141 - 142.

17.   Karner, M., Ungersboeck, E., Gehring, A., Holzer, S., Kosina, H., Selberherr, S. (2006).
Strain Effects on Quasi-Bound State Tunneling in Advanced SOI CMOS Technologies.
In 2006 International Conference on Simulation of Semiconductor Processes and Devices, Monterey, California, United States. https://doi.org/10.1109/sispad.2006.282898 (reposiTUm)

16.   Ungersböck, S., Sverdlov, V., Kosina, H., Selberherr, S. (2006).
Strain Engineering for CMOS Devices.
In 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings (Part 1 of 3) (pp. 124–127), Peking, Austria. (reposiTUm)

15.   Ungersböck, S., Kosina, H., Selberherr, S. (2006).
The Influence of Stress on Inversion Layer Mobility.
In Abstracts Advanced Heterostructure Workshop (p. TH-2), Kona. (reposiTUm)

14.   Krishnamohan, T., Jungemann, C., Kim, D., Ungersboeck, E., Selberherr, S., Wong, P., Nishi, Y., Saraswat, K. (2006).
Theoretical Investigation of Performance in Uniaxially- And Biaxially-Strained Si, SiGe and Ge Double-Gate P-MOSFETs.
In 2006 International Electron Devices Meeting, San Francisco, CA, USA. https://doi.org/10.1109/iedm.2006.346938 (reposiTUm)

13.   Dhar, S., Kosina, H., Palankovski, V., Ungersböck, S., Selberherr, S. (2005).
A Physically-Based Electron Mobility Model for Strained Si Devices.
In NSTI Nanotech Technical Proceedings (pp. 13–16), Anaheim, Austria. (reposiTUm)

12.   Dhar, S., Karlowatz, G., Ungersböck, S., Kosina, H., Selberherr, S. (2005).
Modeling of Velocity-Field Characteristics in Strained Silicon.
In Proceedings of the XIII International Workshop on Physics of Semiconductor Devices (pp. 1060–1063), New Dehli. (reposiTUm)

11.   Ungersböck, S., Kosina, H. (2005).
Monte Carlo Study of Electron Transport in Strained Silicon Inversion Layers.
In 15th Workshop on Modelling and Simulation of Electron Devices (pp. 10–11), Pisa, Austria. (reposiTUm)

10.   Dhar, S., Karlowatz, G., Ungersboeck, E., Kosina, H. (2005).
Numerical and Analytical Modeling of the High-Field Electron Mobility in Strained Silicon.
In 2005 International Conference On Simulation of Semiconductor Processes and Devices, Tokyo, Japan. https://doi.org/10.1109/sispad.2005.201513 (reposiTUm)

9.   Ungersboeck, E., Kosina, H. (2005).
The Effect of Degeneracy on Electron Transport in Strained Silicon Inversion Layers.
In 2005 International Conference On Simulation of Semiconductor Processes and Devices, Tokyo, Japan. https://doi.org/10.1109/sispad.2005.201535 (reposiTUm)

8.  M. Pourfath, E. Ungersböck, A. Gehring, B.-H. Cheong, W. Park, H. Kosina, S. Selberherr:
"Improving the Ambipolar Behavior of Schottky Barrier Carbon Nanotube Field Effect Transistors";
Talk: European Solid-State Device Research Conference (ESSDERC), Leuven; 2004-09-21 - 2004-09-23; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", Institute of Electrical and Electronics Engineers, (2004), ISBN: 0780384784; 429 - 432.

7.  S. Dhar, H. Kosina, V. Palankovski, E. Ungersböck, S. Selberherr:
"Modeling of Electron Mobility in Strained Si Devices";
Talk: Semiconductor Advances for Future Electronics (SAFE), Veldhoven, Netherlands; 2004-11-25 - 2004-11-26; in: "Proceedings of SAFE 2004", Technology Foundation, Utrecht, (2004), ISBN: 90-73461-43-x; 793 - 796. https://doi.org/10.13140/2.1.1839.7126

6.  M. Pourfath, E. Ungersböck, A. Gehring, W. Park, B.-H. Cheong, H. Kosina, S. Selberherr:
"Numerical Analysis of Coaxial Double Gate Schottky Barrier Carbon Nanotube Field Effect Transistors";
Poster: International Workshop on Computational Electronics (IWCE), West Lafayette, IN, USA; 2004-10-24 - 2004-10-27; in: "Book of Abstracts of the International Workshop on Computational Electronics (IWCE)", (2004), ISBN: 0-7803-8649-3; 237 - 238. https://doi.org/10.1109/IWCE.2004.1407414

5.  E. Ungersböck, M. Pourfath, A. Gehring, H. Kosina, B.-H. Cheong, S. Selberherr:
"Optimization of Carbon Nanotube Field Effect Transistors";
Poster: Symposium on Nano Device Technology (SNDT), Hsinchu; 2004-05-12 - 2004-05-13; in: "Proceedings of the Symposium on Nano Device Technology", (2004), 117 - 120.

4.  M. Pourfath, E. Ungersböck, A. Gehring, B.-H. Cheong, W. Park, H. Kosina, S. Selberherr:
"Optimization of Schottky Barrier Carbon Nanotube Field Effect Transistors";
Talk: Nano and Giga Challenges in Microelectronics (NGCM), Krakau; 2004-09-13 - 2004-09-17; in: "Nano and Giga Challenges in Microelectronics Book of Abstracts", (2004), 201.

3.  M. Pourfath, E. Ungersböck, A. Gehring, B.-H. Cheong, H. Kosina, S. Selberherr:
"Three-Dimensional Analysis of Schottky Barrier Carbon Nanotube Field Effect Transistors";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Munich, Germany; 2004-09-02 - 2004-09-04; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", Springer, (2004), ISBN: 3211224688; 149 - 152. https://doi.org/10.1007/978-3-7091-0624-2_35

2.  E. Ungersböck, A. Gehring, H. Kosina, S. Selberherr, B.-H. Cheong, W. B. Choi:
"Analysis of Carrier Transport in Carbon Nanotube FET Devices";
Talk: International Workshop on the Physics of Semiconductor Devices (IWPSD), Madras; 2003-12-16 - 2003-12-20; in: "Proceedings of the Twelfth International Workshop on the Physics of Semiconductor Devices", (2003), ISBN: 81-7319-567-6; 1059 - 1061.

1.  E. Ungersböck, A. Gehring, H. Kosina, S. Selberherr, B.-H. Cheong, W. B. Choi:
"Simulation of Carrier Transport in Carbon Nanotube Field Effect Transistors";
Talk: European Solid-State Device Research Conference (ESSDERC), Estoril; 2003-09-16 - 2003-09-18; in: "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2003), ISBN: 0-7803-7999-3; 411 - 414.

Doctor's Theses (authored and supervised)

1.   Ungersböck, S.-E. (2007).
Advanced Modeling of Strained CMOS Technology
Technische Universität Wien. https://doi.org/10.34726/hss.2007.8326 (reposiTUm)

Diploma and Master Theses (authored and supervised)

3.   Höflechner, B. (2006).
A Random Number Generator Library for Monte Carlo Simulation
Technische Universität Wien. (reposiTUm)

2.  A. Nentchev:
"Development of a Set-Up-Software for the Global Trigger of the CMS Experiment on the Large Hadron Collider in CERN";
Supervisor: E. Langer, E. Ungersböck; Institut für Mikroelektronik, 2004.

1.   Ungersböck, S.-E. (2002).
Numerische Berechnung Der Bandstruktur Von Halbleitern
Technische Universität Wien. (reposiTUm)

Scientific Reports

4.   Entner, R., Heinzl, R., Nentchev, A., Ungersböck, S. E., Wagner, M., Selberherr, S. (2006).
VISTA Status Report December 2006.
(reposiTUm)

3.   Ceric, H., Karner, M., Nentchev, A., Schwaha, P., Ungersböck, S. E., Selberherr, S. (2005).
VISTA Status Report December 2005.
(reposiTUm)

2.   Gehring, A., Pourfath, M., Ungersböck, S. E., Wagner, S., Wessner, W., Selberherr, S. (2004).
VISTA Status Report December 2004.
(reposiTUm)

1.   Gehring, A., Heitzinger, C., Hössinger, A., Ungersböck, S. E., Wessner, W., Selberherr, S. (2003).
VISTA Status Report December 2003.
(reposiTUm)