Staff Person Publications
  •  Intranet
t3kitt3kitt3kit
  • Home
  • TeachingOpen
    • Lectures
    • Bachelor Theses
    • Master Theses
    • Dissertations
  • ResearchOpen
    • Activities
    • Computing Infrastructure
    • Characterization Lab
    • Annual Reviews
    • Public Projects
    • Conferences
  • PublicationsOpen
    • Books and Book Editorships
    • Papers in Journals
    • Contributions to Books
    • Conference Presentations
    • Scientific Reports
    • Patents
    • Habilitation Theses
    • PhD Theses
    • Master's Theses
  • SoftwareOpen
    • Software
    • Download
    • License Agreement
  • StaffOpen
    • Active Staff
    • Former Staff
  • About UsOpen
    • Contact Us
    • Join Us
    • Partners
    • Imprint
    • Corporate Design
    • Sitemap
  • News

Publications Stanislav Vitanov

34 records


Publications in Scientific Journals

5. J. Kuzmik, S. Vitanov, C. Dua, J. Carlin, C. Ostermaier, A. Alexewicz, G. Strasser, D. Pogany, E. Gornik, N. Grandjean, S. Delage, V. Palankovski:
"Buffer-Related Degradation Aspects of Single and Double-Heterostructure Quantum Well InAlN/GaN High-Electron-Mobility Transistors";
Japanese Journal of Applied Physics, 51, (2012), 054102-1 - 054102-5 doi:10.1143/JJAP.51.054102. BibTeX
4. S. Vitanov, V. Palankovski, S. Maroldt, R. Quay, S. Murad, T. Rödle, S. Selberherr:
"Physics-Based Modeling of GaN HEMTs";
IEEE Transactions on Electron Devices, 59, (2012), 685 - 693 doi:10.1109/TED.2011.2179118. BibTeX
3. S. Maroldt, D. Wiegner, S. Vitanov, V. Palankovski, R. Quay, O. Ambacher:
"Efficient AlGaN/GaN Linear and Digital-Switch-Mode Power Amplifiers for Operation at 2 GHz";
IEICE Transactions on Electronics, E93-C, (2010), 1238 - 1244. BibTeX
2. S. Vitanov, V. Palankovski, S. Maroldt, R. Quay:
"High-Temperature Modeling of AlGaN/GaN HEMTs";
Solid-State Electronics, 54, (2010), 1105 - 1112 doi:10.1016/j.sse.2010.05.026. BibTeX
1. S. Vitanov, V. Palankovski:
"Normally-Off AlGaN/GaN HEMTs with InGaN cap layer: A simulation study";
Solid-State Electronics, 52, (2008), 1791 - 1795 doi:10.1016/j.sse.2008.07.011. BibTeX

Contributions to Books

3. S. Vitanov, V. Palankovski:
"Monte Carlo Study of Transport Properties of InN";
in "Narrow Gap Semiconductors 2007, Springer Proceedings in Physics", 119, B. Murdin, S. Clowes (ed); Springer Netherlands, 2008, ISBN: 13978-1-4020-8424-9, 97 - 100 doi:10.1007/978-1-4020-8425-6_24. BibTeX
2. S. Vitanov, M. Nedjalkov, V. Palankovski:
"A Monte Carlo Model of Piezoelectric Scattering in GaN";
in "Numerical Methods and Applications, Lecture Notes in Computer Science", 4310, T. Boyanov, S. Dimova, K. Georgiev, G. Nikolov (ed); Springer-Verlag, Berlin-Heidelberg, 2007, ISBN: 978-3-540-70940-4, 197 - 204 doi:10.1007/978-3-540-70942-8_23. BibTeX
1. S. Vitanov, V. Palankovski, R. Quay, E. Langer:
"Modeling of Electron Transport in GaN-Based Materials and Devices";
in "AIP Conference Proceedings, Vol. 893", American Institute of Physics, 2007, ISBN: 978-0-7354-0397-0, 1399 - 1400. BibTeX

Talks and Poster Presentations (with Proceedings-Entry)

25. S. Vitanov, J. Kuzmik, V. Palankovski:
"Normally-Off InAlN/GaN HEMTs with n++ GaN Cap Layer: A Simulation Study";
Talk: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 2011-12-07 - 2011-12-09; in "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3, 2 page(s) doi:10.1109/ISDRS.2011.6135161. BibTeX
24. S. Vitanov, J. Kuzmik, V. Palankovski:
"Study of the Conduction Properties of the n++ GaN Cap Layer in GaN/InAlN/GaN E-HEMTs";
Talk: International Scientific and Applied Science Conference on Electronics, Sozopol, Bulgaria; 2011-09-14 - 2011-09-16; in "Annual Journal of Electronics", (2011), 113 - 116. BibTeX
23. G. R. Aloise, S. Vitanov, V. Palankovski:
"Temperature Dependence of the Transport Properties of InN";
Talk: Microtherm 2011, Lodz, Poland; 2011-06-28 - 2011-07-01; in "Official Proceedings of Microtherm 2011", (2011), ISBN: 978-83-932197-0-4, 6 page(s) . BibTeX
22. G. R. Aloise, S. Vitanov, V. Palankovski:
"Performance Study of Nitride-Based Gunn Diodes";
Talk: Nanotech 2011, Boston, USA; 2011-06-13 - 2011-06-16; in "Technical Proceedings of the 2011 NSTI Nanotechnology Conference & Expo - Nanotech 2011", (2011), ISBN: 978-1-4398-7139-3, 4 page(s) . BibTeX
21. S. Vitanov, V. Palankovski:
"Electron Mobility Models for III-Nitrides";
Talk: International Scientific and Applied Science Conference (ET), Sozopol; 2010-09-22 - 2010-09-24; in "Annual Journal of Electronics", (2010), ISSN: 1313-1842, 18 - 21. BibTeX
20. S. Vitanov, V. Palankovski, S. Maroldt, R. Quay:
"Non-Linearity of Transconductance and Source-Gate Resistance of HEMTs";
Poster: European Solid-State Device Research Conference (ESSDERC), Sevilla; 2010-09-14 - 2010-09-16; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2010), ISBN: 978-84-693-6437-6, 4 page(s) . BibTeX
19. S. Vitanov, V. Palankovski, S. Selberherr:
"Hydrodynamic Models for GaN-Based HEMTs";
Poster: European Solid-State Device Research Conference (ESSDERC), Sevilla; 2010-09-14 - 2010-09-16; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2010), ISBN: 978-84-693-6437-6, 4 page(s) . BibTeX
18. S. Vitanov, V. Palankovski:
"High-Temperature Small-Signal Analysis of AlGaN/GaN HEMTs";
Poster: Junior Scientist Conference 2010 (JSC 2010), Wien; 2010-04-07 - 2010-04-09; in "Proceedings of the Junior Scientist Conference", (2010), ISBN: 978-3-200-01797-9, 59 - 60. BibTeX
17. S. Vitanov, V. Palankovski, S. Maroldt, R. Quay:
"High-Temperature Modeling of AlGaN/GaN HEMTs";
Talk: International Semiconductor Device Research Symposium (ISDRS), Maryland; 2009-12-09 - 2009-12-11; in "2009 International Semiconductor Device Research Symposium", (2009), ISBN: 978-1-4244-6031-1, 2 page(s) doi:10.1109/ISDRS.2009.5378300. BibTeX
16. S. Vitanov, V. Palankovski, S. Maroldt, R. Quay:
"A Simulation Study of Enhancement-Mode AlGaN/GaN HEMTs with Recessed Gates";
Talk: European Workshop on Heterostructure Technology, Guenzburg/Ulm; 2009-11-02 - 2009-11-04; in "HETECH 2009 Book of Abstracts", (2009), 109 - 110. BibTeX
15. S. Vitanov, V. Palankovski:
"Influence of the Gate Recess on the Performance of Enhancement-Mode AlGaN/GaN HEMTs";
Talk: International Scientific and Applied Science Conference (ET), Sozopol; 2009-09-14 - 2009-09-17; in "Annual Journal of Electronics", (2009), ISSN: 1313-1842, 144 - 147. BibTeX
14. S. Vitanov, V. Palankovski:
"Enhancement Mode HEMTs: Evaluation of Two Approaches by Numerical Simulation";
Talk: Junior Scientist Conference 2008, Technische Universität Wien; 2008-11-17 - 2008-11-18; in "Junior Scientist Conference Proceedings", (2008), ISBN: 978-3-200-01612-5, 221 - 222. BibTeX
13. S. Vitanov, V. Palankovski, G. Pozzovivo, J. Kuzmik, R. Quay:
"Systematical Study of InAlN/GaN Devices by Numerical Simulation";
Talk: European Workshop on Heterostructure Technology, Venice; 2008-11-03 - 2008-11-05; in "HETECH 2008 Book of Abstracts", (2008), ISBN: 978-88-6129-296-3, 159 - 160. BibTeX
12. S. Vitanov, V. Palankovski:
"Simulation of AlGaN/GaN HEMTs with InGaN Cap Layer";
Talk: International Scientific and Applied Science Conference (ET), Sozopol; 2008-09-24 - 2008-09-26; in "The Seventeenth International Scientific and Applied Science Conference Electronics ET'2008 Proceedings of the Conference Book 4", (2008), ISSN: 1313-1842, 67 - 70. BibTeX
11. S. Vitanov, P. Vitanov, V. Palankovski:
"Two-Dimensional Numerical Optimization of MIS Solar Cell on N-Type Silicon";
Poster: European Photovoltaic Solar Energy Conference, Valencia; 2008-09-01 - 2008-09-05; in "23rd European Photovoltaic Solar Energy Conference", (2008), 1743 - 1745. BibTeX
10. S. Vitanov, V. Palankovski:
"Normally-Off AlGaN/GaN HEMTs with InGaN Cap Layer: A Theoretical Study";
Poster: International Semiconductor Device Research Symposium (ISDRS), Maryland; 2007-12-12 - 2007-12-14; in "2007 International Semiconductor Device Research Symposium", (2007), ISBN: 978-1-4244-1892-3, 2 page(s) doi:10.1109/ISDRS.2007.4422390. BibTeX
9. S. Vitanov, V. Palankovski, S. Murad, T. Rödle, R. Quay, S. Selberherr:
"Predictive Simulation of AlGaN/GaN HEMTs";
Talk: IEEE Compound Semiconductor IC Symposium (CSICS), Portland; 2007-10-14 - 2007-10-17; in "IEEE Compound Semiconductor Integrated Circuit Symposium Technical Digest 2007", (2007), ISBN: 1-4244-1022-3, 131 - 134 doi:10.1109/CSICS07.2007.31. BibTeX
8. S. Vitanov, V. Palankovski, S. Murad, T. Rödle, R. Quay, S. Selberherr:
"Hydrodynamic Modeling of AlGaN/GaN HEMTs";
Talk: T. Grasser, S. Selberherr (ed); International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 2007-09-25 - 2007-09-27; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2007), 12, ISBN: 978-3-211-72860-4, 273 - 276 doi:10.1007/978-3-211-72861-1_65. BibTeX
7. S. Vitanov, V. Palankovski:
"Monte Carlo Study of Transport Properties of InN";
Poster: International Conference on Narrow Gap Semiconductors, Guildford; 2007-07-08 - 2007-07-12; in "The 13th International Conference on Narrow Gap Semiconductors", (2007), 99. BibTeX
6. S. Vitanov, V. Palankovski, R. Quay, E. Langer:
"Modeling of Electron Transport in GaN-based Materials and Devices";
Poster: 28th International Conference on the Physics of Semiconductors, Wien; 2006-07-24 - 2006-07-28; in "28th International Conference on the Physics of Semiconductors", (2007), 244. BibTeX
5. V. Palankovski, S. Vitanov, R. Quay:
"Field-Plate Optimization of AlGaN/GaN HEMTs";
Talk: IEEE Compound Semiconductor IC Symposium (CSICS), San Antonio; 2006-11-12 - 2006-11-15; in "IEEE Compound Semiconductor Integrated Circuit Symposium Technical Digest", (2006), ISBN: 1-4244-0126-7, 107 - 110 doi:10.1109/CSICS.2006.319926. BibTeX
4. S. Vitanov, V. Palankovski, R. Quay, E. Langer:
"Two-Dimensional Numerical Simulation of AlGaN/GaN HEMTs";
Talk: Target Days (TARGET), Frascati; 2006-10-16 - 2006-10-18; in "TARGET Days 2006 Book of Proceedings", (2006), ISBN: 3-902477-07-5, 81 - 84. BibTeX
3. P. Vitanov, S. Vitanov, V. Palankovski:
"Two-Dimensional Analysis of the Back-Side Contacts of Thin Silicon Solar Cells";
Poster: 21st European Photovoltaic Solar Energy Conference, Dresden; 2006-09-04 - 2006-09-08; in "21st European Photovoltaic Solar Energy Conference", (2006), ISBN: 3-936338-20-5, 1475 - 1478. BibTeX
2. S. Vitanov, M. Nedjalkov, V. Palankovski:
"A Monte Carlo Model of Piezoelectric Scattering in GaN";
Talk: International Conference on Numerical Methods and Applications (NM&A), Borovets; 2006-08-20 - 2006-08-24; in "Sixth International Conference on Numerical Methods and Applications Abstracts", (2006), B-75. BibTeX
1. P. Vitanov, N. LeQuang, A. Harizanova, O. Nichiporuk, T. Ivanova, S. Vitanov, V. Palankovski:
"New Surface Passivation and Local Contacts on the Backside for thin mc-Si Solar Cells";
Talk: World Renewable Energy Congress (WREC), Firenze; 2006-08-19 - 2006-08-25; in "World Renewable Energy Congress IX Book of Abstracts", (2006), ISBN: 978-0-08-045056-8, 564. BibTeX

Doctor's Theses (authored and supervised)

1. S. Vitanov:
"Simulation of High Electron Mobility Transistors";
Reviewer: S. Selberherr, R. Quay; Institut für Mikroelektronik, 2010, oral examination: 2010-12-20 doi:10.34726/hss.2010.21514. BibTeX
  • Active Staff
  • Former Staff

Institute for Microelectronics
Head: Univ. Prof. Dipl.-Ing. Dr. techn. Tibor Grasser
Deputy Head: O. Univ. Prof. Dipl.-Ing. Dr. techn. Dr.h.c. Siegfried Selberherr
Contact Us    |    Join Us    |    Imprint
© E360 - Institute for Microelectronics 2018