Publications Stanislav Vitanov
34 records
5. | J. Kuzmik, S. Vitanov, C. Dua, J. Carlin, C. Ostermaier, A. Alexewicz, G. Strasser, D. Pogany, E. Gornik, N. Grandjean, S. Delage, V. Palankovski: "Buffer-Related Degradation Aspects of Single and Double-Heterostructure Quantum Well InAlN/GaN High-Electron-Mobility Transistors"; Japanese Journal of Applied Physics, 51, (2012), 054102-1 - 054102-5 doi:10.1143/JJAP.51.054102. BibTeX |
4. | S. Vitanov, V. Palankovski, S. Maroldt, R. Quay, S. Murad, T. Rödle, S. Selberherr: "Physics-Based Modeling of GaN HEMTs"; IEEE Transactions on Electron Devices, 59, (2012), 685 - 693 doi:10.1109/TED.2011.2179118. BibTeX |
3. | S. Maroldt, D. Wiegner, S. Vitanov, V. Palankovski, R. Quay, O. Ambacher: "Efficient AlGaN/GaN Linear and Digital-Switch-Mode Power Amplifiers for Operation at 2 GHz"; IEICE Transactions on Electronics, E93-C, (2010), 1238 - 1244. BibTeX |
2. | S. Vitanov, V. Palankovski, S. Maroldt, R. Quay: "High-Temperature Modeling of AlGaN/GaN HEMTs"; Solid-State Electronics, 54, (2010), 1105 - 1112 doi:10.1016/j.sse.2010.05.026. BibTeX |
1. | S. Vitanov, V. Palankovski: "Normally-Off AlGaN/GaN HEMTs with InGaN cap layer: A simulation study"; Solid-State Electronics, 52, (2008), 1791 - 1795 doi:10.1016/j.sse.2008.07.011. BibTeX |
3. | S. Vitanov, V. Palankovski: "Monte Carlo Study of Transport Properties of InN"; in "Narrow Gap Semiconductors 2007, Springer Proceedings in Physics", 119, B. Murdin, S. Clowes (ed); Springer Netherlands, 2008, ISBN: 13978-1-4020-8424-9, 97 - 100 doi:10.1007/978-1-4020-8425-6_24. BibTeX |
2. | S. Vitanov, M. Nedjalkov, V. Palankovski: "A Monte Carlo Model of Piezoelectric Scattering in GaN"; in "Numerical Methods and Applications, Lecture Notes in Computer Science", 4310, T. Boyanov, S. Dimova, K. Georgiev, G. Nikolov (ed); Springer-Verlag, Berlin-Heidelberg, 2007, ISBN: 978-3-540-70940-4, 197 - 204 doi:10.1007/978-3-540-70942-8_23. BibTeX |
1. | S. Vitanov, V. Palankovski, R. Quay, E. Langer: "Modeling of Electron Transport in GaN-Based Materials and Devices"; in "AIP Conference Proceedings, Vol. 893", American Institute of Physics, 2007, ISBN: 978-0-7354-0397-0, 1399 - 1400. BibTeX |
25. | S. Vitanov, J. Kuzmik, V. Palankovski: "Normally-Off InAlN/GaN HEMTs with n++ GaN Cap Layer: A Simulation Study"; Talk: International Semiconductor Device Research Symposium (ISDRS), Washington DC , USA; 2011-12-07 - 2011-12-09; in "Proceedings of the International Semiconductor Device Research Symposium (ISDRS 2011)", (2011), ISBN: 978-1-4577-1754-3, 2 page(s) doi:10.1109/ISDRS.2011.6135161. BibTeX |
24. | S. Vitanov, J. Kuzmik, V. Palankovski: "Study of the Conduction Properties of the n++ GaN Cap Layer in GaN/InAlN/GaN E-HEMTs"; Talk: International Scientific and Applied Science Conference on Electronics, Sozopol, Bulgaria; 2011-09-14 - 2011-09-16; in "Annual Journal of Electronics", (2011), 113 - 116. BibTeX |
23. | G. R. Aloise, S. Vitanov, V. Palankovski: "Temperature Dependence of the Transport Properties of InN"; Talk: Microtherm 2011, Lodz, Poland; 2011-06-28 - 2011-07-01; in "Official Proceedings of Microtherm 2011", (2011), ISBN: 978-83-932197-0-4, 6 page(s) . BibTeX |
22. | G. R. Aloise, S. Vitanov, V. Palankovski: "Performance Study of Nitride-Based Gunn Diodes"; Talk: Nanotech 2011, Boston, USA; 2011-06-13 - 2011-06-16; in "Technical Proceedings of the 2011 NSTI Nanotechnology Conference & Expo - Nanotech 2011", (2011), ISBN: 978-1-4398-7139-3, 4 page(s) . BibTeX |
21. | S. Vitanov, V. Palankovski: "Electron Mobility Models for III-Nitrides"; Talk: International Scientific and Applied Science Conference (ET), Sozopol; 2010-09-22 - 2010-09-24; in "Annual Journal of Electronics", (2010), ISSN: 1313-1842, 18 - 21. BibTeX |
20. | S. Vitanov, V. Palankovski, S. Maroldt, R. Quay: "Non-Linearity of Transconductance and Source-Gate Resistance of HEMTs"; Poster: European Solid-State Device Research Conference (ESSDERC), Sevilla; 2010-09-14 - 2010-09-16; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2010), ISBN: 978-84-693-6437-6, 4 page(s) . BibTeX |
19. | S. Vitanov, V. Palankovski, S. Selberherr: "Hydrodynamic Models for GaN-Based HEMTs"; Poster: European Solid-State Device Research Conference (ESSDERC), Sevilla; 2010-09-14 - 2010-09-16; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2010), ISBN: 978-84-693-6437-6, 4 page(s) . BibTeX |
18. | S. Vitanov, V. Palankovski: "High-Temperature Small-Signal Analysis of AlGaN/GaN HEMTs"; Poster: Junior Scientist Conference 2010 (JSC 2010), Wien; 2010-04-07 - 2010-04-09; in "Proceedings of the Junior Scientist Conference", (2010), ISBN: 978-3-200-01797-9, 59 - 60. BibTeX |
17. | S. Vitanov, V. Palankovski, S. Maroldt, R. Quay: "High-Temperature Modeling of AlGaN/GaN HEMTs"; Talk: International Semiconductor Device Research Symposium (ISDRS), Maryland; 2009-12-09 - 2009-12-11; in "2009 International Semiconductor Device Research Symposium", (2009), ISBN: 978-1-4244-6031-1, 2 page(s) doi:10.1109/ISDRS.2009.5378300. BibTeX |
16. | S. Vitanov, V. Palankovski, S. Maroldt, R. Quay: "A Simulation Study of Enhancement-Mode AlGaN/GaN HEMTs with Recessed Gates"; Talk: European Workshop on Heterostructure Technology, Guenzburg/Ulm; 2009-11-02 - 2009-11-04; in "HETECH 2009 Book of Abstracts", (2009), 109 - 110. BibTeX |
15. | S. Vitanov, V. Palankovski: "Influence of the Gate Recess on the Performance of Enhancement-Mode AlGaN/GaN HEMTs"; Talk: International Scientific and Applied Science Conference (ET), Sozopol; 2009-09-14 - 2009-09-17; in "Annual Journal of Electronics", (2009), ISSN: 1313-1842, 144 - 147. BibTeX |
14. | S. Vitanov, V. Palankovski: "Enhancement Mode HEMTs: Evaluation of Two Approaches by Numerical Simulation"; Talk: Junior Scientist Conference 2008, Technische Universität Wien; 2008-11-17 - 2008-11-18; in "Junior Scientist Conference Proceedings", (2008), ISBN: 978-3-200-01612-5, 221 - 222. BibTeX |
13. | S. Vitanov, V. Palankovski, G. Pozzovivo, J. Kuzmik, R. Quay: "Systematical Study of InAlN/GaN Devices by Numerical Simulation"; Talk: European Workshop on Heterostructure Technology, Venice; 2008-11-03 - 2008-11-05; in "HETECH 2008 Book of Abstracts", (2008), ISBN: 978-88-6129-296-3, 159 - 160. BibTeX |
12. | S. Vitanov, V. Palankovski: "Simulation of AlGaN/GaN HEMTs with InGaN Cap Layer"; Talk: International Scientific and Applied Science Conference (ET), Sozopol; 2008-09-24 - 2008-09-26; in "The Seventeenth International Scientific and Applied Science Conference Electronics ET'2008 Proceedings of the Conference Book 4", (2008), ISSN: 1313-1842, 67 - 70. BibTeX |
11. | S. Vitanov, P. Vitanov, V. Palankovski: "Two-Dimensional Numerical Optimization of MIS Solar Cell on N-Type Silicon"; Poster: European Photovoltaic Solar Energy Conference, Valencia; 2008-09-01 - 2008-09-05; in "23rd European Photovoltaic Solar Energy Conference", (2008), 1743 - 1745. BibTeX |
10. | S. Vitanov, V. Palankovski: "Normally-Off AlGaN/GaN HEMTs with InGaN Cap Layer: A Theoretical Study"; Poster: International Semiconductor Device Research Symposium (ISDRS), Maryland; 2007-12-12 - 2007-12-14; in "2007 International Semiconductor Device Research Symposium", (2007), ISBN: 978-1-4244-1892-3, 2 page(s) doi:10.1109/ISDRS.2007.4422390. BibTeX |
9. | S. Vitanov, V. Palankovski, S. Murad, T. Rödle, R. Quay, S. Selberherr: "Predictive Simulation of AlGaN/GaN HEMTs"; Talk: IEEE Compound Semiconductor IC Symposium (CSICS), Portland; 2007-10-14 - 2007-10-17; in "IEEE Compound Semiconductor Integrated Circuit Symposium Technical Digest 2007", (2007), ISBN: 1-4244-1022-3, 131 - 134 doi:10.1109/CSICS07.2007.31. BibTeX |
8. | S. Vitanov, V. Palankovski, S. Murad, T. Rödle, R. Quay, S. Selberherr: "Hydrodynamic Modeling of AlGaN/GaN HEMTs"; Talk: T. Grasser, S. Selberherr (ed); International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Vienna, Austria; 2007-09-25 - 2007-09-27; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2007), 12, ISBN: 978-3-211-72860-4, 273 - 276 doi:10.1007/978-3-211-72861-1_65. BibTeX |
7. | S. Vitanov, V. Palankovski: "Monte Carlo Study of Transport Properties of InN"; Poster: International Conference on Narrow Gap Semiconductors, Guildford; 2007-07-08 - 2007-07-12; in "The 13th International Conference on Narrow Gap Semiconductors", (2007), 99. BibTeX |
6. | S. Vitanov, V. Palankovski, R. Quay, E. Langer: "Modeling of Electron Transport in GaN-based Materials and Devices"; Poster: 28th International Conference on the Physics of Semiconductors, Wien; 2006-07-24 - 2006-07-28; in "28th International Conference on the Physics of Semiconductors", (2007), 244. BibTeX |
5. | V. Palankovski, S. Vitanov, R. Quay: "Field-Plate Optimization of AlGaN/GaN HEMTs"; Talk: IEEE Compound Semiconductor IC Symposium (CSICS), San Antonio; 2006-11-12 - 2006-11-15; in "IEEE Compound Semiconductor Integrated Circuit Symposium Technical Digest", (2006), ISBN: 1-4244-0126-7, 107 - 110 doi:10.1109/CSICS.2006.319926. BibTeX |
4. | S. Vitanov, V. Palankovski, R. Quay, E. Langer: "Two-Dimensional Numerical Simulation of AlGaN/GaN HEMTs"; Talk: Target Days (TARGET), Frascati; 2006-10-16 - 2006-10-18; in "TARGET Days 2006 Book of Proceedings", (2006), ISBN: 3-902477-07-5, 81 - 84. BibTeX |
3. | P. Vitanov, S. Vitanov, V. Palankovski: "Two-Dimensional Analysis of the Back-Side Contacts of Thin Silicon Solar Cells"; Poster: 21st European Photovoltaic Solar Energy Conference, Dresden; 2006-09-04 - 2006-09-08; in "21st European Photovoltaic Solar Energy Conference", (2006), ISBN: 3-936338-20-5, 1475 - 1478. BibTeX |
2. | S. Vitanov, M. Nedjalkov, V. Palankovski: "A Monte Carlo Model of Piezoelectric Scattering in GaN"; Talk: International Conference on Numerical Methods and Applications (NM&A), Borovets; 2006-08-20 - 2006-08-24; in "Sixth International Conference on Numerical Methods and Applications Abstracts", (2006), B-75. BibTeX |
1. | P. Vitanov, N. LeQuang, A. Harizanova, O. Nichiporuk, T. Ivanova, S. Vitanov, V. Palankovski: "New Surface Passivation and Local Contacts on the Backside for thin mc-Si Solar Cells"; Talk: World Renewable Energy Congress (WREC), Firenze; 2006-08-19 - 2006-08-25; in "World Renewable Energy Congress IX Book of Abstracts", (2006), ISBN: 978-0-08-045056-8, 564. BibTeX |
1. | S. Vitanov: "Simulation of High Electron Mobility Transistors"; Reviewer: S. Selberherr, R. Quay; Institut für Mikroelektronik, 2010, oral examination: 2010-12-20 doi:10.34726/hss.2010.21514. BibTeX |