Staff Person Publications

Publications Paul-Jürgen Wagner

32 records

Publications in Scientific Journals

5.		Grasser, T., Kaczer, B., Gös, W., Reisinger, H., Aichinger, T., Hehenberger, P. P., Wagner, P.-J., Schanovsky, F., Franco, J., Toledano-Luque, M., Nelhiebel, M. (2011). The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction–Diffusion to Switching Oxide Traps. IEEE Transactions on Electron Devices, 58(11), 3652–3666. https://doi.org/10.1109/ted.2011.2164543 (reposiTUm)

4.		Grasser, T., Reisinger, H., Wagner, P.-J., Kaczer, B. (2010). Time-Dependent Defect Spectroscopy for Characterization of Border Traps in Metal-Oxide-Semiconductor Transistors. Physical Review B, 82(245318). https://doi.org/10.1103/physrevb.82.245318 (reposiTUm)

3.		Reisinger, H., Vollertsen, R. P., Wagner, P.-J., Huttner, T., Martin, A., Aresu, S., Gustin, W., Grasser, T., Schlünder, C. (2009). A Study of NBTI and Short-Term Threshold Hysteresis of Thin Nitrided and Thick Non-Nitrided Oxides. IEEE Transactions on Device and Materials Reliability, 9(2), 106–114. https://doi.org/10.1109/tdmr.2009.2021389 (reposiTUm)

2.		Hehenberger, Ph., Wagner, P.-J., Reisinger, H., Grasser, T. (2009). On the Temperature and Voltage Dependence of Short-Term Negative Bias Temperature Stress. Microelectronics Reliability, 49(9–11), 1013–1017. https://doi.org/10.1016/j.microrel.2009.06.040 (reposiTUm)

1.		Grasser, T., Wagner, P.-Jü., Hehenberger, P., Goes, W., Kaczer, B. (2008). A Rigorous Study of Measurement Techniques for Negative Bias Temperature Instability. IEEE Transactions on Device and Materials Reliability, 8(3), 526–535. https://doi.org/10.1109/tdmr.2008.2002353 (reposiTUm)

Contributions to Books

1.		Goes, W., Schanovsky, F., Hehenberger, P., Wagner, P.-J., Grasser, T. (2010). (Invited) Charge Trapping and the Negative Bias Temperature Instability. In ECS Transactions (pp. 565–589). ECS Transactions. https://doi.org/10.1149/1.3481647 (reposiTUm)

Talks and Poster Presentations (with Proceedings-Entry)

20.		Grasser, T., Rott, K., Reisinger, H., Wagner, P., Gös, W., Schanovsky, F., Waltl, M., Toledano-Luque, M., Kaczer, B. (2013). Advanced Characterization of Oxide Traps: The Dynamic Time-Dependent Defect Spectroscopy. In Proceedings of the International Reliability Physics Symposium (IRPS) (pp. 1–6), Phoenix. (reposiTUm)

19.		Grasser, T., Rott, K., Reisinger, H., Waltl, M., Wagner, P., Schanovsky, F., Goes, W., Pobegen, G., Kaczer, B. (2013). Hydrogen-Related Volatile Defects as the Possible Cause for the Recoverable Component of NBTI. In 2013 IEEE International Electron Devices Meeting, San Francisco, CA, USA. https://doi.org/10.1109/iedm.2013.6724637 (reposiTUm)

18.		Franco, J., Kaczer, B., Toledano-Luque, M., Roussel, P., Groeseneken, G., Schwarz, B., Bina, M., Waltl, M., Wagner, P., Grasser, T. (2013). Reduction of the BTI Time-Dependent Variability in Nanoscaled MOSFETs by Body Bias. In Proceedings of the International Reliability Physics Symposium (IRPS) (pp. 1–6), Phoenix. (reposiTUm)

17.		Waltl, M., Wagner, P., Reisinger, H., Rott, K., Grasser, T. (2012). Advanced Data Analysis Algorithms for the Time-Dependent Defect Spectroscopy of NBTI. In IEEE International Integrated Reliability Workshop Final Report (pp. 74–79), California. (reposiTUm)

16.		Grasser, T., Kaczer, B., Reisinger, H., Wagner, P., Toledano-Luque, M. (2012). Modeling of the Bias Temperature Instability Under Dynamic Stress and Recovery Conditions. In 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Peking, Austria. https://doi.org/10.1109/icsict.2012.6466737 (reposiTUm)

15.		Wagner, P., Kaczer, B., Scholten, A., Reisinger, H., Bychikhin, S., Pogany, D., Vandamme, L., Grasser, T. (2012). On the Correlation Between NBTI, SILC, and Flicker Noise. In IEEE International Integrated Reliability Workshop Final Report (pp. 60–64), California. (reposiTUm)

14.		Grasser, T., Kaczer, B., Reisinger, H., Wagner, P., Toledano-Luque, M. (2012). On the Frequency Dependence of the Bias Temperature Instability. In Proceedings of the International Reliability Physics Symposium (IRPS) (p. 6), Phoenix. (reposiTUm)

13.		Grasser, T., Wagner, P., Reisinger, H., Aichinger, T., Pobegen, G., Nelhiebel, M., Kaczer, B. (2011). Analytic Modeling of the Bias Temperature Instability Using Capture/Emission Time Maps. In 2011 International Electron Devices Meeting, San Francisco, CA, USA. https://doi.org/10.1109/iedm.2011.6131624 (reposiTUm)

12.		Grasser, T., Aichinger, T., Pobegen, G., Reisinger, H., Wagner, P., Franco, J., Nelhiebel, M., Kaczer, B. (2011). The 'Permanent' Component of NBTI: Composition and Annealing. In Proceedings of the International Reliability Physics Symposium (IRPS) (p. 9), Phoenix. (reposiTUm)

11.		Gös, W., Schanovsky, F., Hehenberger, P., Wagner, P., Grasser, T. (2010). Charge Trapping and the Negative Bias Temperature Instability. In Meet. Abstr. - Electrochem. Soc. 2010 (p. 565), Las Vegas, USA. (reposiTUm)

10.		Grasser, T., Aichinger, T., Reisinger, H., Franco, J., Wagner, P., Nelhiebel, M., Ortolland, C., Kaczer, B. (2010). On the &Amp;#x2018;permanent’ Component of NBTI. In 2010 IEEE International Integrated Reliability Workshop Final Report, California. https://doi.org/10.1109/iirw.2010.5706472 (reposiTUm)

9.		Wagner, P., Grasser, T., Reisinger, H., Kaczer, B. (2010). Oxide Traps in MOS Transistors: Semi-Automatic Extraction of Trap Parameters From Time Dependent Defect Spectroscopy. In Proceedings of the 17^th International Symposium on the Physical, Failure Analysis of Integrated Circuits (pp. 134–138), Singapore. (reposiTUm)

8.		Grasser, T., Kaczer, B., Goes, W., Reisinger, H., Aichinger, T., Hehenberger, P., Wagner, P., Schanovsky, F., Franco, J., Roussel, P., Nelhiebel, M. (2010). Recent Advances in Understanding the Bias Temperature Instability. In 2010 International Electron Devices Meeting, San Francisco, CA, USA. https://doi.org/10.1109/iedm.2010.5703295 (reposiTUm)

7.		Grasser, T., Reisinger, H., Wagner, P., Kaczer, B., Schanovsky, F., Gös, W. (2010). The Time Dependent Defect Spectroscopy (TDDS) for the Characterization of the Bias Temperature Instability. In Proceedings of the International Reliability Physics Symposium (IRPS) (pp. 16–25), Phoenix. (reposiTUm)

6.		Hehenberger, P., Wagner, P., Reisinger, H., Grasser, T. (2009). Comparison of Fast Measurement Methods for Short-Term Negative Bias Temperature Stress and Relaxation. In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 311–314), Montreux, Austria. (reposiTUm)

5.		Hehenberger, P., Wagner, P., Reisinger, H., Grasser, T. (2009). On the Temperature and Voltage Dependence of Short-Term Negative Bias Temperature Stress. In Proceedings of the 20^th European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis (p. 4), Maastricht. (reposiTUm)

4.		Wagner, P., Aichinger, T., Grasser, T., Nelhiebel, M., Vandamme, L. (2009). Possible Correlation Between Flicker Noise and Bias Temperature Stress. In Proceedings of the 20^th International Conference on Noise and Fluctuations (pp. 621–624), Salamanca, Spanien, Austria. (reposiTUm)

3.		Grasser, T., Reisinger, H., Goes, W., Aichinger, T., Hehenberger, P., Wagner, P., Nelhiebel, M., Franco, J., Kaczer, B. (2009). Switching Oxide Traps as the Missing Link Between Negative Bias Temperature Instability and Random Telegraph Noise. In 2009 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA. https://doi.org/10.1109/iedm.2009.5424235 (reposiTUm)

2.		Reisinger, H., Vollertsen, R., Wagner, P., Huttner, T., Martin, A., Aresu, S., Gustin, W., Grasser, T., Schlünder, C. (2008). The Effect of Recovery on NBTI Characterization of Thick Non-Nitrided Oxides. In Final Report of the IEEE International Integrated Reliability Workshop (IIRW) (pp. 1–6), S. Lake Tahoe. (reposiTUm)

1.		Grasser, T., Wagner, P., Hehenberger, P., Gös, W., Kaczer, B. (2007). A Rigorous Study of Measurement Techniques for Negative Bias Temperature Instability. In Final Report of the IEEE International Integrated Reliability Workshop (IIRW) (pp. 6–11), S. Lake Tahoe. (reposiTUm)

Talks and Poster Presentations (without Proceedings-Entry)

1.		Grasser, T., Reisinger, H., Wagner, P.-J., Gös, W., Schanovsky, F., Kaczer, B. (2010). The Time Dependent Defect Spectroscopy (TDDS) for the Characterization of the Bias Temperature Instability. European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Maastricht, EU. (reposiTUm)

Diploma and Master Theses (authored and supervised)

3.		Braitner, M. (2012). Erstellung Und Verifikation Von Modellen Für Leistungs-MOSFETs Für Die Quantitative EMV-Simulation Technische Universität Wien. (reposiTUm)

2.		Waltl, M. (2011). Change Point Detection in Time Dependent Defect Spectroscopy Data Technische Universität Wien. https://resolver.obvsg.at/urn:nbn:at:at-ubtuw:1-60036 (reposiTUm)

1.		Wagner, P.-J. (2007). Sampler and Synthesizer for a Low-Cost Vector Network Analyzer Technische Universität Wien. https://resolver.obvsg.at/urn:nbn:at:at-ubtuw:1-35537 (reposiTUm)

Scientific Reports

2.		Baumgartner, O., Ertl, O., Orio, R., Wagner, P.-J., Windbacher, T., Selberherr, S. (2009). VISTA Status Report December 2009. (reposiTUm)

1.		Grasser, T., Gös, W., Triebl, O., Hehenberger, P. P., Wagner, P.-J., Schwaha, P., Heinzl, R., Holzer, S., Entner, R., Wagner, S., Schanovsky, F. (2007). 3 Year Report 2005-2007. (reposiTUm)