Publications Dominic Waldhör

37 records

Publications in Scientific Journals

14.   Ravichandran, H., Knobloch, T., Pannone, A., Karl, A., Stampfer, B., Waldhör, D., Zheng, Y., Sakib, N., Karim Sadaf, M., Pendurthi, R., Torsi, R., Robinson, J. A., Grasser, T., Das, S. (2023).
Observation of Rich Defect Dynamics in Monolayer MoS₂.
ACS Nano, 17(15), 14449–14460. https://doi.org/10.1021/acsnano.2c12900 (reposiTUm)

13.   Wilhelmer, C., Waldhör, D., Cvitkovich, L., Milardovich, D., Waltl, M., Grasser, T. (2023).
Over- And Undercoordinated Atoms as a Source of Electron and Hole Traps in Amorphous Silicon Nitride (A-Si3N4).
Nanomaterials, 13(16), Article 2286. https://doi.org/10.3390/nano13162286 (reposiTUm)

12.   Tselios, K., Knobloch, T., Waldhör, D., Stampfer, B., Ioannidis, E., Enichlmair, H., Minixhofer, R., Grasser, T., Waltl, M. (2023).
Revealing the Impact of Gate Area Scaling on Charge Trapping Employing SiO₂ Transistors.
IEEE Transactions on Device and Materials Reliability, 23(3), 355–362. https://doi.org/10.1109/TDMR.2023.3262141 (reposiTUm)

11.   Wilhelmer, C., Waldhoer, D., Jech, M., El-Sayed, A.-M. B., Cvitkovich, L., Waltl, M., Grasser, T. (2022).
Ab Initio Investigations in Amorphous Silicon Dioxide: Proposing a Multi-State Defect Model for Electron and Hole Capture.
Microelectronics Reliability, 139(114801), 114801. https://doi.org/10.1016/j.microrel.2022.114801 (reposiTUm)

10.   Ducry, F., Waldhoer, D., Knobloch, T., Csontos, M., Jimenez Olalla, N., Leuthold, J., Grasser, T., Luisier, M. (2022).
An Ab Initio Study on Resistance Switching in Hexagonal Boron Nitride.
Npj 2D Materials and Applications, 6(58). https://doi.org/10.1038/s41699-022-00340-6 (reposiTUm)

9.   Waltl, M., Knobloch, T., Tselios, K., Filipovic, L., Stampfer, B., Hernandez, Y., Waldhör, D., Illarionov, Y., Kaczer, B., Grasser, T. (2022).
Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology?
Advanced Materials, 34(48), 2201082. https://doi.org/10.1002/adma.202201082 (reposiTUm)

8.   Michl, J., Grill, A., Waldhoer, D., Goes, W., Kaczer, B., Linten, D., Parvais, B., Govoreanu, B., Radu, I., Waltl, M., Grasser, T. (2021).
Efficient Modeling of Charge Trapping at Cryogenic Temperatures-Part I: Theory.
IEEE Transactions on Electron Devices, 68(12), 6365–6371. https://doi.org/10.1109/ted.2021.3116931 (reposiTUm)

7.   Michl, J., Grill, A., Waldhoer, D., Goes, W., Kaczer, B., Linten, D., Parvais, B., Govoreanu, B., Radu, I., Grasser, T., Waltl, M. (2021).
Efficient Modeling of Charge Trapping at Cryogenic Temperatures-Part II: Experimental.
IEEE Transactions on Electron Devices, 68(12), 6372–6378. https://doi.org/10.1109/ted.2021.3117740 (reposiTUm)

6.   Waltl, M., Waldhoer, D., Tselios, K., Stampfer, B., Schleich, C., Rzepa, G., Enichlmair, H., Ioannidis, E. G., Minixhofer, R., Grasser, T. (2021).
Impact of Single-Defects on the Variability of CMOS Inverter Circuits.
Microelectronics Reliability, 126(114275), 114275. https://doi.org/10.1016/j.microrel.2021.114275 (reposiTUm)

5.   Waltl, M., Waldhör, D., Tselios, K., Stampfer, B., Schleich, C., Rzepa, G., Enichlmair, H., Ioannidis, E. G., Minixhofer, R., Grasser, T. (2021).
Impact of Single-Defects on the Variability of CMOS Inverter Circuits.
Microelectronics Reliability, 126, 1–6. https://doi.org/10.1016/j.microrel.2021.114275 (reposiTUm)

4.   Tselios, K., Waldhör, D., Stampfer, B., Michl, J., Ioannidis, E., Enichlmair, H., Grasser, T., Waltl, M. (2021).
On the Distribution of Single Defect Threshold Voltage Shifts in SiON Transistors.
IEEE Transactions on Device and Materials Reliability, 21(2), 199–206. https://doi.org/10.1109/tdmr.2021.3080983 (reposiTUm)

3.   Schleich, C., Waldhoer, D., Waschneck, K., Feil, M. W., Reisinger, H., Grasser, T., Waltl, M. (2021).
Physical Modeling of Charge Trapping in 4h-SiC DMOSFET Technologies.
IEEE Transactions on Electron Devices, 68(8), 4016–4021. https://doi.org/10.1109/ted.2021.3092295 (reposiTUm)

2.   Jech, M., El-Sayed, A.-M., Tyaginov, S., Waldhör, D., Bouakline, F., Saalfrank, P., Jabs, D., Jungemann, C., Waltl, M., Grasser, T. (2021).
Quantum Chemistry Treatment of Silicon-Hydrogen Bond Rupture by Nonequilibrium Carriers in Semiconductor Devices.
Physical Review Applied, 16(014026). https://doi.org/10.1103/physrevapplied.16.014026 (reposiTUm)

1.   Waldhoer, D., Schleich, C., Michl, J., Stampfer, B., Tselios, K., Ioannidis, E. G., Enichlmair, H., Waltl, M., Grasser, T. (2021).
Toward Automated Defect Extraction From Bias Temperature Instability Measurements.
IEEE Transactions on Electron Devices, 68(8), 4057–4063. https://doi.org/10.1109/ted.2021.3091966 (reposiTUm)

Contributions to Books

1.   Waldhoer, D., El-Sayed, A.-M. B., Wimmer, Y., Waltl, M., Grasser, T. (2020).
Atomistic Modeling of Oxide Defects.
In T. Grasser (Ed.), Noise in Nanoscale Semiconductor Devices (pp. 609–648). Springer International Publishing. https://doi.org/10.1007/978-3-030-37500-3_18 (reposiTUm)

Talks and Poster Presentations (with Proceedings-Entry)

17.   Wilhelmer, C., Waldhör, D., Cvitkovich, L., Waltl, M., Grasser, T. (2023).
Ab Initio Investigations of Electron and Hole Trapping Processes of H Induced Defects in Amorphous SiO₂.
In The 14th International Conference on SiO₂, Dielectrics and Related Devices : Book of Abstracts (pp. 18–19), Palermo, Italy. (reposiTUm)

16.   Wilhelmer, C., Waldhör, D., Milardovich, D., Cvitkovich, L., Waltl, M., Grasser, T. (2023).
Intrinsic Electron Trapping in Amorphous Silicon Nitride (A-Si3N4:H).
In 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 149–152), Kobe, Japan. https://doi.org/10.23919/SISPAD57422.2023.10319493 (reposiTUm)

15.   Cvitkovich, L., Waldhör, D., El-Sayed, A., Jech, M., Wilhelmer, C., Grasser, T. (2022).
Ab-Initio Modeling of the Initial Stages of Si(100) Thermal Oxidation.
In PSI-K 2022: abstracts book (p. 209), Lausanne, Switzerland. (reposiTUm)

14.   Wilhelmer, C., Waldhör, D., Jech, M., El-Sayed, A., Cvitkovich, L., Waltl, M., Grasser, T. (2022).
Ab-Initio Study of Multi-State Defects in Amorphous SiO2.
In PSI-K 2022: abstracts book (p. 264), Lausanne, Switzerland. (reposiTUm)

13.   Milardovich, D., Waldhoer, D., Jech, M., El-Sayed, A., Grasser, T. (2022).
Building Robust Machine Learning Force Fields by Composite Gaussian Approximation Potentials.
In SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet (pp. 61–62), Granada, Spain. (reposiTUm)

12.   Tselios, K., Knobloch, T., Michl, J., Waldhör, D., Schleich, C., Ioannidis , E., Enichlmair , H., Minixhofer , R., Grasser, T., Waltl, M. (2022).
Impact of Single Defects on NBTI and PBTI Recovery in SiO₂ Transistors.
In Proceedings 2022 IEEE International Integrated Reliability Workshop (IIRW) (pp. 1–5), Fallen Leaf Lake, CA, United States. https://doi.org/10.1109/IIRW56459.2022.10032748 (reposiTUm)

11.   Milardovich, D., Jech, M., Waldhoer, D., El-Sayed, A., Grasser, T. (2022).
Machine Learning Prediction of Defect Structures in Amorphous Silicon Dioxide.
In PSI-K 2022 Abstracts Book, Lausanne, Switzerland. (reposiTUm)

10.   Franco, J., Marneffe, J., Vandooren, A., Kimura, Y., Nyns, L., Wu, Z., El-Sayed, A., Jech, M., Waldhör, D., Claes, D., Arimura, H., Ragnarsson, L., Afanas´Ev, V., Horiguchi, N., Linten, D., Grasser, T., Kaczer, B. (2021).
Atomic Hydrogen Exposure to Enable High-Quality Low-Temperature SiO2 With Excellent pMOS NBTI Reliability Compatible With 3D Sequential Tier Stacking.
In 2020 IEEE International Electron Devices Meeting (IEDM), San Francisco, United States. https://doi.org/10.1109/iedm13553.2020.9372054 (reposiTUm)

9.   Michl, J., Grill, A., Stampfer, B., Waldhoer, D., Schleich, C., Knobloch, T., Ioannidis, E., Enichlmair, H., Minixhofer, R., Kaczer, B., Parvais, B., Govoreanu, B., Radu, I., Grasser, T., Waltl, M. (2021).
Evidence of Tunneling Driven Random Telegraph Noise in Cryo-Cmos.
In Proceedings of the IEEE International Electron Devices Meeting (IEDM) (pp. 31.3.1–31.3.4), San Francisco, CA, United States. https://doi.org/10.1109/IEDM19574.2021.9720501 (reposiTUm)

8.   El-Sayed, A., Seiler, H., Kosina, H., Jech, M., Waldhör, D., Sverdlov, V. (2021).
First Principles Evaluation of Topologically Protected Edge States in MoS$_{2}$ 1T′ Nanoribbons With Realistic Terminations.
In 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS). https://doi.org/10.1109/eurosoi-ulis53016.2021.9560183 (reposiTUm)

7.   Milardovich, D., Jech, M., Waldhoer, D., El-Sayed, A., Grasser, T. (2021).
Machine Learning Prediction of Defect Structures in Amorphous Silicon Dioxide.
In ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC), Grenoble, France. https://doi.org/10.1109/essderc53440.2021.9631837 (reposiTUm)

6.   Cvitkovich, L., Jech, M., Waldhör, D., El-Sayed, A., Wilhelmer, C., Grasser, T. (2021).
Multiscale Modeling Study of Native Oxide Growth on a Si(100) Surface.
In ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC), Grenoble, France. https://doi.org/10.1109/essderc53440.2021.9631790 (reposiTUm)

5.   Wilhelmer, C., Jech, M., Waldhoer, D., El-Sayed, A., Cvitkovich, L., Grasser, T. (2021).
Statistical Ab Initio Analysis of Electron Trapping Oxide Defects in the Si/SiO2 Network.
In ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC), Grenoble, France. https://doi.org/10.1109/essderc53440.2021.9631833 (reposiTUm)

4.   Knobloch, T., Michl, J., Waldhör, D., Illarionov, Y., Stampfer, B., Grill, A., Zhou, R., Wu, P., Waltl, M., Appenzeller, J., Grasser, T. (2020).
Analysis of Single Electron Traps in Nano-Scaled MoS2 FETs at Cryogenic Temperatures.
In Proceedings of the Device Research Conference (DRC) (pp. 52–53), Santa-Barbara, CA, USA. (reposiTUm)

3.   Illarionov, Y., Knobloch, T., Smithe, K., Waltl, M., Grady, R., Waldhör, D., Pop, E., Grasser, T. (2020).
Anomalous Instabilities in CVD-MoS2 FETs Suppressed by High-Quality Al2O3 Encapsulation.
In Proceedings of the Device Research Conference (DRC) (pp. 150–151), Santa-Barbara, CA, USA. (reposiTUm)

2.   Milardovich, D., Jech, M., Waldhoer, D., Waltl, M., Grasser, T. (2020).
Machine Learning Prediction of Defect Formation Energies in A-SiO₂.
In 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan. https://doi.org/10.23919/sispad49475.2020.9241609 (reposiTUm)

1.   Waldhoer, D., Wimmer, Y., El-Sayed, A., Goes, W., Waltl, M., Grasser, T. (2019).
Minimum Energy Paths for Non-Adiabatic Charge Transitions in Oxide Defects.
In 2019 IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA. https://doi.org/10.1109/iirw47491.2019.8989889 (reposiTUm)

Talks and Poster Presentations (without Proceedings-Entry)

2.   Wilhelmer, C., Milardovich, D., Waldhör, D., Cvitkovich, L., Waltl, M., Grasser, T. (2023, May 29).
Charged Instrinsic Defect States in Amorphous Si3N4
European Materials Research Society (E-MRS) Spring Meeting 2023, Strasbourg, France. (reposiTUm)

1.   Wilhelmer, C., Milardovich, D., Waldhör, D., Cvitkovich, L., Waltl, M., Grasser, T. (2023, May 30).
Intrinsic Charge Trapping Sites in Amorphous Si₃N₄
European Materials Research Society (E-MRS) Spring Meeting 2023, Strasbourg, France. (reposiTUm)

Diploma and Master Theses (authored and supervised)

3.   Benzer, A. (2023).
Density Functional Theory (DFT) Investigation of Novel Materials for Application in Sensing
Technische Universität Wien. https://doi.org/10.34726/hss.2023.103762 (reposiTUm)

2.  D. Waldhör:
"Potential Energy Surface Approximations for Nonradiative-Multiphonon Charge Transitions in Oxide Defects";
Supervisor: T. Grasser, Y. Wimmer; Institut für Mikroelektronik, 2018; final examination: 2018-10-05.

1.   Waldhör, D. (2018).
Potential Energy Surface Approximations for Nonradiative Multiphonon Charge Transitions in Oxide Defects
Technische Universität Wien. https://doi.org/10.34726/hss.2018.58665 (reposiTUm)