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Publications Dominic Waldhör

19 records


Publications in Scientific Journals


8. M. Waltl, T. Knobloch, K. Tselios, L. Filipovic, B. Stampfer, Y. Hernandez, D. Waldhör, Y. Illarionov, B. Kaczer, T. Grasser:
"Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology?";
Advanced Materials, n/a, (invited) (2022), 2201082-1 - 2201082-23 doi:10.1002/adma.202201082. BibTeX

7. M. Jech, A.-M. El-Sayed, S. E. Tyaginov, D. Waldhör, F. Bouakline, P. Saalfrank, D. Jabs, C. Jungemann, M. Waltl, T. Grasser:
"Quantum Chemistry Treatment of Silicon-Hydrogen Bond Rupture by Nonequilibrium Carriers in Semiconductor Devices";
Physical Review Applied, 16, (2021), 014026 -1 - 014026 -24 doi:10.1103/PhysRevApplied.16.014026. BibTeX

6. J. Michl, A. Grill, D. Waldhör, W. Goes, B. Kaczer, D. Linten, B. Parvais, B. Govoreanu, I. Radu, T. Grasser, M. Waltl:
"Efficient Modeling of Charge Trapping at Cryogenic Temperatures-Part II: Experimental";
IEEE Transactions on Electron Devices, 68, (2021), 6372 - 6378 doi:10.1109/TED.2021.3117740. BibTeX

5. J. Michl, A. Grill, D. Waldhör, W. Goes, B. Kaczer, D. Linten, B. Parvais, B. Govoreanu, I. Radu, M. Waltl, T. Grasser:
"Efficient Modeling of Charge Trapping at Cryogenic Temperatures-Part I: Theory";
IEEE Transactions on Electron Devices, 68, (2021), 6365 - 6371 doi:10.1109/TED.2021.3116931. BibTeX

4. C. Schleich, D. Waldhör, K. Waschneck, M. Feil, H. Reisinger, T. Grasser, M. Waltl:
"Physical Modeling of Charge Trapping in 4H-SiC DMOSFET Technologies";
IEEE Transactions on Electron Devices, 68, (2021), 4016 - 4021 doi:10.1109/TED.2021.3092295. BibTeX

3. K. Tselios, D. Waldhör, B. Stampfer, J. Michl, E. Ioannidis, H. Enichlmair, T. Grasser, M. Waltl:
"On the Distribution of Single Defect Threshold Voltage Shifts in SiON Transistors";
IEEE Transactions on Device and Materials Reliability, 91, (invited) (2021), 199 - 206 doi:10.1109/TDMR.2021.3080983. BibTeX

2. D. Waldhör, C. Schleich, J. Michl, B. Stampfer, K. Tselios, E. Ioannidis, H. Enichlmair, M. Waltl, T. Grasser:
"Toward Automated Defect Extraction From Bias Temperature Instability Measurements";
IEEE Transactions on Electron Devices, 68, (2021), 4057 - 4063 doi:10.1109/TED.2021.3091966. BibTeX

1. M. Waltl, D. Waldhör, K. Tselios, B. Stampfer, C. Schleich, G. Rzepa, H. Enichlmair, E. Ioannidis, R. Minixhofer, T. Grasser:
"Impact of Single-Defects on the Variability of CMOS Inverter Circuits";
Microelectronics Reliability, 126, (2021), 114275-1 - 114275-6 doi:10.1016/j.microrel.2021.114275. BibTeX


Contributions to Books


2. A.-M. El-Sayed, H. Seiler, H. Kosina, M. Jech, D. Waldhör, V. Sverdlov:
"First Principles Evaluation of Topologically Protected Edge States in MoS$_{2}$ 1T′ Nanoribbons with Realistic Terminations";
in "Proceedings of the 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", B. Cretu (ed); IEEE, 2021, ISBN: 978-1-6654-3745-5, 1 - 4 doi:10.1109/EuroSOI-ULIS53016.2021.9560183. BibTeX

1. D. Waldhör, A.-M. El-Sayed, Y. Wimmer, M. Waltl, T. Grasser:
"Atomistic Modeling of Oxide Defects";
in "Noise in Nanoscale Semiconductor Devices", T. Grasser (ed); Springer International Publishing, 2020, ISBN: 978-3-030-37499-0, 609 - 648 doi:10.1007/978-3-030-37500-3_18. BibTeX


Talks and Poster Presentations (with Proceedings-Entry)


8. J. Franco, J. Marneffe, A. Vandooren, Y. Kimura, L. Nyns, Z. Wu, A.-M. El-Sayed, M. Jech, D. Waldhör, D. Claes, H. Arimura, L. Ragnarsson, V. Afanas´Ev, N. Horiguchi, D. Linten, T. Grasser, B. Kaczer:
"Atomic Hydrogen Exposure to Enable High-Quality Low-Temperature SiO2 with Excellent pMOS NBTI Reliability Compatible with 3D Sequential Tier Stacking";
Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 2021-12-12 - 2021-12-18; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2021), ISBN: 978-1-7281-8888-1, 31.2.1 - 31.2.4 doi:10.1109/IEDM13553.2020.9372054. BibTeX

7. L. Cvitkovich, M. Jech, D. Waldhör, A.-M. El-Sayed, C. Wilhelmer, T. Grasser:
"Multiscale Modeling Study of Native Oxide Growth on a Si(100) Surface";
Talk: European Solid-State Device Research Conference (ESSDERC), Grenoble, France; 2021-09-13 - 2021-09-22; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2021), ISBN: 978-1-6654-3748-6, 235 - 238 doi:10.1109/ESSDERC53440.2021.9631790. BibTeX

6. D. Milardovich, M. Jech, D. Waldhör, A.-M. El-Sayed, T. Grasser:
"Machine Learning Prediction of Defect Structures in Amorphous Silicon Dioxide";
Talk: European Solid-State Device Research Conference (ESSDERC), Grenoble, France; 2021-09-13 - 2021-09-22; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2021), ISBN: 978-1-6654-3748-6, 239 - 242 doi:10.1109/ESSDERC53440.2021.9631837. BibTeX

5. C. Wilhelmer, M. Jech, D. Waldhör, A.-M. El-Sayed, L. Cvitkovich, T. Grasser:
"Statistical Ab Initio Analysis of Electron Trapping Oxide Defects in the Si/SiO2 Network";
Talk: European Solid-State Device Research Conference (ESSDERC), Grenoble, France; 2021-09-13 - 2021-09-22; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2021), ISBN: 978-1-6654-3748-6, 243 - 246 doi:10.1109/ESSDERC53440.2021.9631833. BibTeX

4. D. Milardovich, M. Jech, D. Waldhör, M. Waltl, T. Grasser:
"Machine Learning Prediction of Formation Energies in a-SiO2";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan - virtual; 2020-09-23 - 2020-10-06; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2020), 339 - 342 doi:10.23919/SISPAD49475.2020.9241609. BibTeX

3. Yu. Illarionov, T. Knobloch, K. Smithe, M. Waltl, R. Grady, D. Waldhör, E. Pop, T. Grasser:
"Anomalous Instabilities in CVD-MoS2 FETs Suppressed by High-Quality Al2O3 Encapsulation";
Poster: Device Research Conference (DRC), Columbus, OH, USA - virtual; 2020-06-21 - 2020-06-24; in "Proceedings of the Device Research Conference (DRC)", (2020), 150 - 151. BibTeX

2. T. Knobloch, J. Michl, D. Waldhör, Yu. Illarionov, B. Stampfer, A. Grill, R. Zhou, P. Wu, M. Waltl, J. Appenzeller, T. Grasser:
"Analysis of Single Electron Traps in Nano-scaled MoS2 FETs at Cryogenic Temperatures";
Talk: Device Research Conference (DRC), Columbus, OH, USA - virtual; 2020-06-21 - 2020-06-24; in "Proceedings of the Device Research Conference (DRC)", (2020), 52 - 53. BibTeX

1. D. Waldhör, Y. Wimmer, A.-M. El-Sayed, W. Goes, M. Waltl, T. Grasser:
"Minimum Energy Paths for Non-Adiabatic Charge Transitions in Oxide Defects";
Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2019-10-13 - 2019-10-17; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2019), 1 - 5 doi:10.1109/IIRW47491.2019.8989889. BibTeX


Diploma and Master Theses (authored and supervised)


1. D. Waldhör:
"Potential Energy Surface Approximations for Nonradiative-Multiphonon Charge Transitions in Oxide Defects";
Supervisor: T. Grasser, Y. Wimmer; Institut für Mikroelektronik, 2018, final examination: 2018-10-05. BibTeX

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