Publications Dominic Waldhör
19 records
8. | M. Waltl, T. Knobloch, K. Tselios, L. Filipovic, B. Stampfer, Y. Hernandez, D. Waldhör, Y. Illarionov, B. Kaczer, T. Grasser: "Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology?"; Advanced Materials, n/a, (invited) (2022), 2201082-1 - 2201082-23 doi:10.1002/adma.202201082. BibTeX |
7. | M. Jech, A.-M. El-Sayed, S. E. Tyaginov, D. Waldhör, F. Bouakline, P. Saalfrank, D. Jabs, C. Jungemann, M. Waltl, T. Grasser: "Quantum Chemistry Treatment of Silicon-Hydrogen Bond Rupture by Nonequilibrium Carriers in Semiconductor Devices"; Physical Review Applied, 16, (2021), 014026 -1 - 014026 -24 doi:10.1103/PhysRevApplied.16.014026. BibTeX |
6. | J. Michl, A. Grill, D. Waldhör, W. Goes, B. Kaczer, D. Linten, B. Parvais, B. Govoreanu, I. Radu, T. Grasser, M. Waltl: "Efficient Modeling of Charge Trapping at Cryogenic Temperatures-Part II: Experimental"; IEEE Transactions on Electron Devices, 68, (2021), 6372 - 6378 doi:10.1109/TED.2021.3117740. BibTeX |
5. | J. Michl, A. Grill, D. Waldhör, W. Goes, B. Kaczer, D. Linten, B. Parvais, B. Govoreanu, I. Radu, M. Waltl, T. Grasser: "Efficient Modeling of Charge Trapping at Cryogenic Temperatures-Part I: Theory"; IEEE Transactions on Electron Devices, 68, (2021), 6365 - 6371 doi:10.1109/TED.2021.3116931. BibTeX |
4. | C. Schleich, D. Waldhör, K. Waschneck, M. Feil, H. Reisinger, T. Grasser, M. Waltl: "Physical Modeling of Charge Trapping in 4H-SiC DMOSFET Technologies"; IEEE Transactions on Electron Devices, 68, (2021), 4016 - 4021 doi:10.1109/TED.2021.3092295. BibTeX |
3. | K. Tselios, D. Waldhör, B. Stampfer, J. Michl, E. Ioannidis, H. Enichlmair, T. Grasser, M. Waltl: "On the Distribution of Single Defect Threshold Voltage Shifts in SiON Transistors"; IEEE Transactions on Device and Materials Reliability, 91, (invited) (2021), 199 - 206 doi:10.1109/TDMR.2021.3080983. BibTeX |
2. | D. Waldhör, C. Schleich, J. Michl, B. Stampfer, K. Tselios, E. Ioannidis, H. Enichlmair, M. Waltl, T. Grasser: "Toward Automated Defect Extraction From Bias Temperature Instability Measurements"; IEEE Transactions on Electron Devices, 68, (2021), 4057 - 4063 doi:10.1109/TED.2021.3091966. BibTeX |
1. | M. Waltl, D. Waldhör, K. Tselios, B. Stampfer, C. Schleich, G. Rzepa, H. Enichlmair, E. Ioannidis, R. Minixhofer, T. Grasser: "Impact of Single-Defects on the Variability of CMOS Inverter Circuits"; Microelectronics Reliability, 126, (2021), 114275-1 - 114275-6 doi:10.1016/j.microrel.2021.114275. BibTeX |
2. | A.-M. El-Sayed, H. Seiler, H. Kosina, M. Jech, D. Waldhör, V. Sverdlov: "First Principles Evaluation of Topologically Protected Edge States in MoS$_{2}$ 1T′ Nanoribbons with Realistic Terminations"; in "Proceedings of the 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", B. Cretu (ed); IEEE, 2021, ISBN: 978-1-6654-3745-5, 1 - 4 doi:10.1109/EuroSOI-ULIS53016.2021.9560183. BibTeX |
1. | D. Waldhör, A.-M. El-Sayed, Y. Wimmer, M. Waltl, T. Grasser: "Atomistic Modeling of Oxide Defects"; in "Noise in Nanoscale Semiconductor Devices", T. Grasser (ed); Springer International Publishing, 2020, ISBN: 978-3-030-37499-0, 609 - 648 doi:10.1007/978-3-030-37500-3_18. BibTeX |
8. | J. Franco, J. Marneffe, A. Vandooren, Y. Kimura, L. Nyns, Z. Wu, A.-M. El-Sayed, M. Jech, D. Waldhör, D. Claes, H. Arimura, L. Ragnarsson, V. Afanas´Ev, N. Horiguchi, D. Linten, T. Grasser, B. Kaczer: "Atomic Hydrogen Exposure to Enable High-Quality Low-Temperature SiO2 with Excellent pMOS NBTI Reliability Compatible with 3D Sequential Tier Stacking"; Talk: IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 2021-12-12 - 2021-12-18; in "Proceedings of the IEEE International Electron Devices Meeting (IEDM)", (2021), ISBN: 978-1-7281-8888-1, 31.2.1 - 31.2.4 doi:10.1109/IEDM13553.2020.9372054. BibTeX |
7. | L. Cvitkovich, M. Jech, D. Waldhör, A.-M. El-Sayed, C. Wilhelmer, T. Grasser: "Multiscale Modeling Study of Native Oxide Growth on a Si(100) Surface"; Talk: European Solid-State Device Research Conference (ESSDERC), Grenoble, France; 2021-09-13 - 2021-09-22; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2021), ISBN: 978-1-6654-3748-6, 235 - 238 doi:10.1109/ESSDERC53440.2021.9631790. BibTeX |
6. | D. Milardovich, M. Jech, D. Waldhör, A.-M. El-Sayed, T. Grasser: "Machine Learning Prediction of Defect Structures in Amorphous Silicon Dioxide"; Talk: European Solid-State Device Research Conference (ESSDERC), Grenoble, France; 2021-09-13 - 2021-09-22; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2021), ISBN: 978-1-6654-3748-6, 239 - 242 doi:10.1109/ESSDERC53440.2021.9631837. BibTeX |
5. | C. Wilhelmer, M. Jech, D. Waldhör, A.-M. El-Sayed, L. Cvitkovich, T. Grasser: "Statistical Ab Initio Analysis of Electron Trapping Oxide Defects in the Si/SiO2 Network"; Talk: European Solid-State Device Research Conference (ESSDERC), Grenoble, France; 2021-09-13 - 2021-09-22; in "Proceedings of the European Solid-State Device Research Conference (ESSDERC)", (2021), ISBN: 978-1-6654-3748-6, 243 - 246 doi:10.1109/ESSDERC53440.2021.9631833. BibTeX |
4. | D. Milardovich, M. Jech, D. Waldhör, M. Waltl, T. Grasser: "Machine Learning Prediction of Formation Energies in a-SiO2"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan - virtual; 2020-09-23 - 2020-10-06; in "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2020), 339 - 342 doi:10.23919/SISPAD49475.2020.9241609. BibTeX |
3. | Yu. Illarionov, T. Knobloch, K. Smithe, M. Waltl, R. Grady, D. Waldhör, E. Pop, T. Grasser: "Anomalous Instabilities in CVD-MoS2 FETs Suppressed by High-Quality Al2O3 Encapsulation"; Poster: Device Research Conference (DRC), Columbus, OH, USA - virtual; 2020-06-21 - 2020-06-24; in "Proceedings of the Device Research Conference (DRC)", (2020), 150 - 151. BibTeX |
2. | T. Knobloch, J. Michl, D. Waldhör, Yu. Illarionov, B. Stampfer, A. Grill, R. Zhou, P. Wu, M. Waltl, J. Appenzeller, T. Grasser: "Analysis of Single Electron Traps in Nano-scaled MoS2 FETs at Cryogenic Temperatures"; Talk: Device Research Conference (DRC), Columbus, OH, USA - virtual; 2020-06-21 - 2020-06-24; in "Proceedings of the Device Research Conference (DRC)", (2020), 52 - 53. BibTeX |
1. | D. Waldhör, Y. Wimmer, A.-M. El-Sayed, W. Goes, M. Waltl, T. Grasser: "Minimum Energy Paths for Non-Adiabatic Charge Transitions in Oxide Defects"; Talk: IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA; 2019-10-13 - 2019-10-17; in "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)", (2019), 1 - 5 doi:10.1109/IIRW47491.2019.8989889. BibTeX |
1. | D. Waldhör: "Potential Energy Surface Approximations for Nonradiative-Multiphonon Charge Transitions in Oxide Defects"; Supervisor: T. Grasser, Y. Wimmer; Institut für Mikroelektronik, 2018, final examination: 2018-10-05. BibTeX |