Publications Dominic Waldhör
34 recordsPublications in Scientific Journals
12. | Wilhelmer, C., Waldhör, D., Cvitkovich, L., Milardovich, D., Waltl, M., Grasser, T. (2023). Over- And Undercoordinated Atoms as a Source of Electron and Hole Traps in Amorphous Silicon Nitride (A-Si3N4). Nanomaterials, 13(16), Article 2286. https://doi.org/10.3390/nano13162286 (reposiTUm) | |
11. | Wilhelmer, C., Waldhoer, D., Jech, M., El-Sayed, A.-M. B., Cvitkovich, L., Waltl, M., Grasser, T. (2022). Ab Initio Investigations in Amorphous Silicon Dioxide: Proposing a Multi-State Defect Model for Electron and Hole Capture. Microelectronics Reliability, 139(114801), 114801. https://doi.org/10.1016/j.microrel.2022.114801 (reposiTUm) | |
10. | Ducry, F., Waldhoer, D., Knobloch, T., Csontos, M., Jimenez Olalla, N., Leuthold, J., Grasser, T., Luisier, M. (2022). An Ab Initio Study on Resistance Switching in Hexagonal Boron Nitride. Npj 2D Materials and Applications, 6(58). https://doi.org/10.1038/s41699-022-00340-6 (reposiTUm) | |
9. | Waltl, M., Knobloch, T., Tselios, K., Filipovic, L., Stampfer, B., Hernandez, Y., Waldhör, D., Illarionov, Y., Kaczer, B., Grasser, T. (2022). Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology? Advanced Materials, 34(48), 2201082. https://doi.org/10.1002/adma.202201082 (reposiTUm) | |
8. | Michl, J., Grill, A., Waldhoer, D., Goes, W., Kaczer, B., Linten, D., Parvais, B., Govoreanu, B., Radu, I., Waltl, M., Grasser, T. (2021). Efficient Modeling of Charge Trapping at Cryogenic Temperatures-Part I: Theory. IEEE Transactions on Electron Devices, 68(12), 6365–6371. https://doi.org/10.1109/ted.2021.3116931 (reposiTUm) | |
7. | Michl, J., Grill, A., Waldhoer, D., Goes, W., Kaczer, B., Linten, D., Parvais, B., Govoreanu, B., Radu, I., Grasser, T., Waltl, M. (2021). Efficient Modeling of Charge Trapping at Cryogenic Temperatures-Part II: Experimental. IEEE Transactions on Electron Devices, 68(12), 6372–6378. https://doi.org/10.1109/ted.2021.3117740 (reposiTUm) | |
6. | Waltl, M., Waldhoer, D., Tselios, K., Stampfer, B., Schleich, C., Rzepa, G., Enichlmair, H., Ioannidis, E. G., Minixhofer, R., Grasser, T. (2021). Impact of Single-Defects on the Variability of CMOS Inverter Circuits. Microelectronics Reliability, 126(114275), 114275. https://doi.org/10.1016/j.microrel.2021.114275 (reposiTUm) | |
5. | Waltl, M., Waldhör, D., Tselios, K., Stampfer, B., Schleich, C., Rzepa, G., Enichlmair, H., Ioannidis, E. G., Minixhofer, R., Grasser, T. (2021). Impact of Single-Defects on the Variability of CMOS Inverter Circuits. Microelectronics Reliability, 126, 1–6. https://doi.org/10.1016/j.microrel.2021.114275 (reposiTUm) | |
4. | Tselios, K., Waldhör, D., Stampfer, B., Michl, J., Ioannidis, E., Enichlmair, H., Grasser, T., Waltl, M. (2021). On the Distribution of Single Defect Threshold Voltage Shifts in SiON Transistors. IEEE Transactions on Device and Materials Reliability, 21(2), 199–206. https://doi.org/10.1109/tdmr.2021.3080983 (reposiTUm) | |
3. | Schleich, C., Waldhoer, D., Waschneck, K., Feil, M. W., Reisinger, H., Grasser, T., Waltl, M. (2021). Physical Modeling of Charge Trapping in 4h-SiC DMOSFET Technologies. IEEE Transactions on Electron Devices, 68(8), 4016–4021. https://doi.org/10.1109/ted.2021.3092295 (reposiTUm) | |
2. | Jech, M., El-Sayed, A.-M., Tyaginov, S., Waldhör, D., Bouakline, F., Saalfrank, P., Jabs, D., Jungemann, C., Waltl, M., Grasser, T. (2021). Quantum Chemistry Treatment of Silicon-Hydrogen Bond Rupture by Nonequilibrium Carriers in Semiconductor Devices. Physical Review Applied, 16(014026). https://doi.org/10.1103/physrevapplied.16.014026 (reposiTUm) | |
1. | Waldhoer, D., Schleich, C., Michl, J., Stampfer, B., Tselios, K., Ioannidis, E. G., Enichlmair, H., Waltl, M., Grasser, T. (2021). Toward Automated Defect Extraction From Bias Temperature Instability Measurements. IEEE Transactions on Electron Devices, 68(8), 4057–4063. https://doi.org/10.1109/ted.2021.3091966 (reposiTUm) | |
Contributions to Books
1. | Waldhoer, D., El-Sayed, A.-M. B., Wimmer, Y., Waltl, M., Grasser, T. (2020). Atomistic Modeling of Oxide Defects. In T. Grasser (Ed.), Noise in Nanoscale Semiconductor Devices (pp. 609–648). Springer International Publishing. https://doi.org/10.1007/978-3-030-37500-3_18 (reposiTUm) | |
Talks and Poster Presentations (with Proceedings-Entry)
16. | Wilhelmer, C., Waldhör, D., Cvitkovich, L., Waltl, M., Grasser, T. (2023). Ab Initio Investigations of Electron and Hole Trapping Processes of H Induced Defects in Amorphous SiO₂. In The 14th International Conference on SiO₂, Dielectrics and Related Devices : Book of Abstracts (pp. 18–19), Palermo, Italy. (reposiTUm) | |
15. | Wilhelmer, C., Waldhör, D., Milardovich, D., Cvitkovich, L., Waltl, M., Grasser, T. (2023). Intrinsic Electron Trapping in Amorphous Silicon Nitride (A-Si3N4:H). In 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 149–152), Kobe, Japan. https://doi.org/10.23919/SISPAD57422.2023.10319493 (reposiTUm) | |
14. | Cvitkovich, L., Waldhör, D., El-Sayed, A., Jech, M., Wilhelmer, C., Grasser, T. (2022). Ab-Initio Modeling of the Initial Stages of Si(100) Thermal Oxidation. In PSI-K 2022: abstracts book (p. 209), Lausanne, Schwitzerland. (reposiTUm) | |
13. | Wilhelmer, C., Waldhör, D., Jech, M., El-Sayed, A., Cvitkovich, L., Waltl, M., Grasser, T. (2022). Ab-Initio Study of Multi-State Defects in Amorphous SiO2. In PSI-K 2022: abstracts book (p. 264), Lausanne, Schwitzerland. (reposiTUm) | |
12. | Milardovich, D., Waldhoer, D., Jech, M., El-Sayed, A., Grasser, T. (2022). Building Robust Machine Learning Force Fields by Composite Gaussian Approximation Potentials. In SISPAD 2022: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet (pp. 61–62), Granada, Spain. (reposiTUm) | |
11. | Milardovich, D., Jech, M., Waldhoer, D., El-Sayed, A., Grasser, T. (2022). Machine Learning Prediction of Defect Structures in Amorphous Silicon Dioxide. In PSI-K 2022 Abstracts Book, Lausanne, Schwitzerland. (reposiTUm) | |
10. | Franco, J., Marneffe, J., Vandooren, A., Kimura, Y., Nyns, L., Wu, Z., El-Sayed, A., Jech, M., Waldhör, D., Claes, D., Arimura, H., Ragnarsson, L., Afanas´Ev, V., Horiguchi, N., Linten, D., Grasser, T., Kaczer, B. (2021). Atomic Hydrogen Exposure to Enable High-Quality Low-Temperature SiO2 With Excellent pMOS NBTI Reliability Compatible With 3D Sequential Tier Stacking. In 2020 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA. https://doi.org/10.1109/iedm13553.2020.9372054 (reposiTUm) | |
9. | Michl, J., Grill, A., Stampfer, B., Waldhoer, D., Schleich, C., Knobloch, T., Ioannidis, E., Enichlmair, H., Minixhofer, R., Kaczer, B., Parvais, B., Govoreanu, B., Radu, I., Grasser, T., Waltl, M. (2021). Evidence of Tunneling Driven Random Telegraph Noise in Cryo-Cmos. In Proceedings of the IEEE International Electron Devices Meeting (IEDM) (pp. 31.3.1–31.3.4), San Francisco, CA, United States. https://doi.org/10.1109/IEDM19574.2021.9720501 (reposiTUm) | |
8. | El-Sayed, A., Seiler, H., Kosina, H., Jech, M., Waldhör, D., Sverdlov, V. (2021). First Principles Evaluation of Topologically Protected Edge States in MoS$_{2}$ 1T′ Nanoribbons With Realistic Terminations. In 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS). https://doi.org/10.1109/eurosoi-ulis53016.2021.9560183 (reposiTUm) | |
7. | Milardovich, D., Jech, M., Waldhoer, D., El-Sayed, A., Grasser, T. (2021). Machine Learning Prediction of Defect Structures in Amorphous Silicon Dioxide. In ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC), Montreux, Austria. https://doi.org/10.1109/essderc53440.2021.9631837 (reposiTUm) | |
6. | Cvitkovich, L., Jech, M., Waldhör, D., El-Sayed, A., Wilhelmer, C., Grasser, T. (2021). Multiscale Modeling Study of Native Oxide Growth on a Si(100) Surface. In ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC), Montreux, Austria. https://doi.org/10.1109/essderc53440.2021.9631790 (reposiTUm) | |
5. | Wilhelmer, C., Jech, M., Waldhoer, D., El-Sayed, A., Cvitkovich, L., Grasser, T. (2021). Statistical Ab Initio Analysis of Electron Trapping Oxide Defects in the Si/SiO2 Network. In ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC), Montreux, Austria. https://doi.org/10.1109/essderc53440.2021.9631833 (reposiTUm) | |
4. | Knobloch, T., Michl, J., Waldhör, D., Illarionov, Y., Stampfer, B., Grill, A., Zhou, R., Wu, P., Waltl, M., Appenzeller, J., Grasser, T. (2020). Analysis of Single Electron Traps in Nano-Scaled MoS2 FETs at Cryogenic Temperatures. In Proceedings of the Device Research Conference (DRC) (pp. 52–53), Santa-Barbara, CA, USA. (reposiTUm) | |
3. | Illarionov, Y., Knobloch, T., Smithe, K., Waltl, M., Grady, R., Waldhör, D., Pop, E., Grasser, T. (2020). Anomalous Instabilities in CVD-MoS2 FETs Suppressed by High-Quality Al2O3 Encapsulation. In Proceedings of the Device Research Conference (DRC) (pp. 150–151), Santa-Barbara, CA, USA. (reposiTUm) | |
2. | Milardovich, D., Jech, M., Waldhoer, D., Waltl, M., Grasser, T. (2020). Machine Learning Prediction of Defect Formation Energies in A-SiO₂. In 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Tokyo, Japan. https://doi.org/10.23919/sispad49475.2020.9241609 (reposiTUm) | |
1. | Waldhoer, D., Wimmer, Y., El-Sayed, A., Goes, W., Waltl, M., Grasser, T. (2019). Minimum Energy Paths for Non-Adiabatic Charge Transitions in Oxide Defects. In 2019 IEEE International Integrated Reliability Workshop (IIRW), South Lake Tahoe, CA, USA. https://doi.org/10.1109/iirw47491.2019.8989889 (reposiTUm) | |
Talks and Poster Presentations (without Proceedings-Entry)
2. | Wilhelmer, C., Milardovich, D., Waldhör, D., Cvitkovich, L., Waltl, M., Grasser, T. (2023, May 29). Charged Instrinsic Defect States in Amorphous Si3N4 European Materials Research Society (E-MRS) Spring Meeting 2023, Strasbourg, France. (reposiTUm) | |
1. | Wilhelmer, C., Milardovich, D., Waldhör, D., Cvitkovich, L., Waltl, M., Grasser, T. (2023, May 30). Intrinsic Charge Trapping Sites in Amorphous Si₃N₄ European Materials Research Society (E-MRS) Spring Meeting 2023, Strasbourg, France. (reposiTUm) | |
Diploma and Master Theses (authored and supervised)
3. | Benzer, A. (2023). Density Functional Theory (DFT) Investigation of Novel Materials for Application in Sensing Technische Universität Wien. https://doi.org/10.34726/hss.2023.103762 (reposiTUm) | |
2. | D. Waldhör: "Potential Energy Surface Approximations for Nonradiative-Multiphonon Charge Transitions in Oxide Defects"; Supervisor: T. Grasser, Y. Wimmer; Institut für Mikroelektronik, 2018; final examination: 2018-10-05. | |
1. | Waldhör, D. (2018). Potential Energy Surface Approximations for Nonradiative Multiphonon Charge Transitions in Oxide Defects Technische Universität Wien. https://doi.org/10.34726/hss.2018.58665 (reposiTUm) | |